14-05-2020 дата публикации
Номер: US20200148951A1
Автор:
Jonghee PARK,
Kitae KIM,
Jinseock KIM,
Gyu-Po KIM,
Hyun-Cheol SHIN,
Dae-Woo LEE,
Sang-Hyuk LEE,
Zheng HONG,
PARK JONGHEE,
KIM KITAE,
KIM JINSEOCK,
KIM GYU-PO,
SHIN HYUN-CHEOL,
LEE DAE-WOO,
LEE SANG-HYUK,
HONG ZHENG,
PARK, Jonghee,
KIM, Kitae,
KIM, Jinseock,
KIM, Gyu-Po,
SHIN, Hyun-Cheol,
LEE, Dae-Woo,
LEE, Sang-Hyuk,
HONG, Zheng
Принадлежит:
An etching composition includes an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a sulfate compound and water. 1. An etching composition , comprising an inorganic acid compound , a carboxylic acid compound , a sulfonic acid compound , a glycol compound , a nitrogen-containing dicarbonyl compound , a sulfate compound and water.2. The etching composition as claimed in claim 1 , wherein the inorganic acid compound includes at least one selected from nitric acid (HNO) claim 1 , sulfuric acid (HSO) and hydrochloric acid (HCl).3. The etching composition as claimed in claim 1 , wherein the carboxylic acid compound includes at least one selected from acetic acid claim 1 , (CHCOH) claim 1 , malic acid (CHO) claim 1 , citric acid (CHO) claim 1 , tartaric acid (CHO) claim 1 , lactic acid (CHO) claim 1 , formic acid (CHO) claim 1 , succinic acid (CHO) and fumaric acid (CHO).4. The etching composition as claimed in claim 1 , wherein the sulfonic acid compound includes at least one selected from methanesulfonic acid (CHSOH) claim 1 , p-toluenesulfonic acid (CHCHSOH) claim 1 , benzenesulfonic acid (CHSOH) claim 1 , amino methylsulfonic acid (CHNOS) and sulfamic acid (HNSO).5. The etching composition as claimed in claim 1 , wherein the glycol compound includes at least one selected from diethylene glycol (CHO) claim 1 , ethylene glycol (HOCHCHOH) claim 1 , glycolic acid (CHOHCOOH) claim 1 , propylene glycol (CHO) and triethylene glycol (CHO).6. The etching composition as claimed in claim 1 , wherein the nitrogen-containing dicarbonyl compound includes at least one selected from iminodiacetic acid (CHNO) claim 1 , imidazolidine-2 claim 1 ,4-dione (CHNO) claim 1 , succinimide (CHNO) claim 1 , glutarimide (CHNO) claim 1 , asparagine (CHNO) claim 1 , glutamic acid (CHNO) claim 1 , aspartic acid (CHNO) claim 1 , pyro-glutamic acid (CHNO) and hippuric acid (CHNO).7. The etching composition as ...
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