Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год

Применить Всего найдено 51. Отображено 51.
16-09-1998 дата публикации

Solid switch

Номер: CN0002291755Y
Автор: WANG SHUDUO, SHUDUO WANG

The utility model relates to a contactless solid switch which is directly controlled by men. The goal of the utility model lies in realizing a generator which can be switched by manual control without adding any optical and electrical signals, and accordingly the utility model provides a solid switch which is composed of an amplifier, an electrical signal processing circuit, a trigger circuit, a transducer which is composed of controllable silicon and an organic piezoelectric-pyroelectric film which is connected with the input end of an amplification circuit, etc. The utility model has the advantages of direct artificial function, no contact, no structural parts, no abrasion and ageing problems, small size, controllable sensitivity, fastness and reliability. The serviceable life of the utility model is more than 10 years. All circuits can be combined together.

Подробнее
19-07-2016 дата публикации

Method for making topological insulator structure

Номер: US0009394624B2

A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi.

Подробнее
19-07-2011 дата публикации

Polar molecule dominated electrorheological fluid

Номер: US0007981315B2

Polar molecules dominated electrorheological fluids mainly comprising a mixture of dispersed phase of solid particles and/or dispersing liquid medium. The dispersed phase solid particles, on the surface, or the liquid dispersing medium contain polar molecules or polar groups, the dipole moment of which is 0.5-10 deb and the size is between 0.1 nm and 0.8 nm. Dispersed phase solid particles are spherical or nearly spherical, of which the size is 10-300 nm and dielectric constant is higher than 50. The conductance rate of the liquid dispersing medium is lower than 108 S/m, and the dielectric constant is lower than 10. The PM-ER fluids possess the characteristics of high yield strength, high dynamic shear strength, low leakage current, the linear dependence of yield strength on electric field, and high yield strength at low electric field, etc. The yield strength improves to almost 100 times of that of ordinary ER fluids and reaches to more than 200 Kpa.

Подробнее
13-10-2015 дата публикации

Electrical device having magnetically doped topological insulator quantum well film

Номер: US0009159909B2

An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3, wherein 0 Подробнее

17-05-2016 дата публикации

Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ

Номер: US0009340898B2

A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ...

Подробнее
02-08-1989 дата публикации

LIQUID NITROGEN TEMP. ZONE SUPERCONDUCTIVE FILM AND THE PREPARATION METHOD THEREOF

Номер: CN0001004951B

... 本发明的液氮温区超导薄膜制备工艺,按AxB5-xCu5O5(3-y)或AxB1-xCuO3-y体系制成化合物靶,其中A=Ca,Sr,Ba;B=Sc,Y,La;X=0.5-0.6;Y=0.5-1;后者体系X=0.3-0.7。用直流(或射频)磁控拣射和热处理工艺,工艺简单、可重复,稳定性好。制备的薄膜厚度0.5-1μm,在液氮温区呈现超导,用电阻法或感应法可测量其薄膜的超导电性。 ...

Подробнее
13-09-2011 дата публикации

Ce-based amorphous metallic plastic

Номер: US0008016956B2

The present invention concerns a Ce-base amorphous metallic plastics being CeaAlbMc, in which 55a75, 5b25, 10c25, and a+b+c=100; said M is Co, Cu or Ni. Otherwise the metallic plastics could be CedAleCufZg, in which 55d75, 5e15, 15f25, 0.01g10, and d+e+f+g=100; said Z is one element selected from Co, Fe, Hf, Mg, Mo, Nb, Sc, Ta, Ti, W, Zn and Zr. The metallic plastic could also be CehAliCujNik, in which 55h75, 5i15, 15j25, 0.01k<5, and h+i+j+k=100. The Ce-base amorphous metallic plastic has a low glass-transition temperature and a wide super-cooling liquid phase area, therefore possesses a high thermal stability. The material could be deformed, shaped and imprinting worked into desired amorphous alloy articles as thermoplastic plastics at a very low temperature.

Подробнее
14-10-1998 дата публикации

Model crystal used for space crystal grower

Номер: CN0002294268Y

The utility model relates to a model crystal for measuring temperature field in a melting crystal growing process which aims to make a model crystal which has low cost and is capable of repeating experiment and convenient for measuring the distribution of the temperature field in a melting crystal growing process. The utility model is composed of an outer sleeve, fillings, and 2 to 20 pairs of thermocouples, wherein the 2 to 20 pairs of thermocouples are inserted into different positions of the fillings according to requirement and sealed by an outer shell, and the thermocouples are led out from one end of the utility model to connect with a temperature measuring instrument. The utility model can save a lot of costly materials and be used repeatedly.

Подробнее
28-04-2015 дата публикации

Topological insulator structure having magnetically doped topological insulator quantum well film

Номер: US0009018617B2

A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0 Подробнее

07-08-2012 дата публикации

Magnetic logic element with toroidal multiple magnetic films and a method of logic treatment using the same

Номер: US0008236576B2

A magnetic logic element with toroidal magnetic multilayers (5,6,8,9). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers (5,6,8,9) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core (10) in the closed toroidal section. Said magnetic multilayers (5,6,8,9) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (5,6,8,9), the input signal lines A, B, C and an output signal line O are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.

Подробнее
24-05-2016 дата публикации

Method for generating quantized anomalous hall effect

Номер: US0009349946B2

A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013 cm2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

Подробнее
22-09-2015 дата публикации

Electrical device having magnetically doped topological insulator quantum well film

Номер: US0009142760B2

A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0.05 Подробнее

30-09-1998 дата публикации

Apparatus for detecting and monitoring thin film epitaxial growth by light reflection differential

Номер: CN0002293067Y

The utility model relates to an optical instrument, particularly an optical and monitoring apparatus. The apparatus is composed of a laser, a modulator, a set of plane mirrors, a photoelectric detector, a magnifier, a data acquisition and processing system, etc. The utility model is characterized in that the laser (1) whose front is provided with the modulator exports polarized light, and the polarized light through modulating after passing through more than two plane mirrors arranged on a light way radiates onto the surface of a measured base sheet. The polarized light gets to the photoelectric detector through the surface reflection of film, and a detected signal magnified by the magnifier inputs a data acquisition system. The apparatus is independent of a film-manufacturing system, and is arranged out of the film-manufacturing room. The utility model has the advantages of wide application surface, convenient use, etc. The apparatus is a favorable tool used to prepare and explore epitaxial ...

Подробнее
08-01-2013 дата публикации

Surface modified electrodes for ER fluids

Номер: US0008349154B2

The invention relates to modified electrodes for ER fluids prepared by adding a rough, wear-resisting, and low conductive modified layer on the surface of metallic electrodes. The material for the modified layer can be at least one from diamond, alumina, titanium dioxide, carborundum, titanium nitride, nylon, polytetrafluoroethylene, adhesive, and adhesive film. Through the addition of the modified layer, the adhesion of the ER fluid to electrodes is increased so that the shear stress measured near the plates is close to the intrinsic value, which makes the ER fluid applicable, while reducing the leakage current and increasing the breakdown voltage of the ER fluid equipment.

Подробнее
20-01-2009 дата публикации

MRAM based on vertical current writing and its control method

Номер: US0007480171B2

The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

Подробнее
03-05-2011 дата публикации

Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same

Номер: US0007936595B2

Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.

Подробнее
25-10-2011 дата публикации

Epitaxial material used for GaN based LED with low polarization effect and manufacturing method thereof

Номер: US0008043872B2

A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer (2) and n-type GaN layer (3), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer (4) and InGaAlN multi-quantum well structure light emitting layer (5) and p-type InGaAlN layer (6) on sapphire or SiC substrate (1) in turn. The method adds InGaAlN multi-quantum well structure polarized regulating and controlling layer, thus reduces polarization effect of quantum well active region.

Подробнее
16-12-1998 дата публикации

Large power continuous broad-tuning multipass optical parametric oscillation amplifier

Номер: CN0002300929Y

The utility model relates to an optical device, particularly an oscillation amplification device with high power, continuous broad tuning, and multi-path photic parameter. Aiming at achieving the continuous broad tuning of photic parameter and simultaneously achieving operation with high power and large energy, the utility model provides a multi-path photic parameter oscillation amplification device. The utility model is composed of two prisms, non-linear optics crystal, a double-color mirror, and pump light. The non-linear optics crystal of the utility model is arranged between the two prisms; the double-color mirror is arranged on a multi-path photic parameter oscillation amplification device on the position of the prism of the input light end of a light path. The utility model achieves the operation of high averaging power and large pulse energy and simultaneously continuous broad tuning, with high conversion efficiency of 30%.

Подробнее