19-11-2020 дата публикации
Номер: US20200365805A1
Автор:
KE HE,
GAO-YUAN JIANG,
QI-KUN XUE,
HE KE,
JIANG GAO-YUAN,
XUE QI-KUN,
HE, KE,
JIANG, GAO-YUAN,
XUE, QI-KUN
The present application discloses a topological insulator structure including an insulating substrate, a topological insulator quantum well film, and an insulating protective layer. The topological insulator quantum well film and the insulating protective layer are orderly stacked on a surface of the insulating substrate, forming a heterojunction structure. The insulating protective layer is selected from the group consisting of the wurtzite-structured CdSe, the sphalerite-structured ZnTe, the sphalerite-structured CdSe, the sphalerite-structured CdTe, the sphalerite-structured HgSe, the sphalerite-structured HgTe, and combinations thereof. The present application also discloses a method for making the topological insulator structure. 1. A topological insulator structure comprising:an insulating substrate,a topological insulator quantum well film, andan insulating protective layer,wherein the topological insulator quantum well film and the insulating protective layer are orderly stacked on a surface of the insulating substrate, forming a heterojunction structure, and the insulating protective layer is selected from a group consisting of wurtzite-structured CdSe, sphalerite-structured ZnTe, sphalerite-structured CdSe, sphalerite-structured CdTe, sphalerite-structured HgSe, sphalerite-structured HgTe, and combinations thereof.2. The topological insulator structure of claim 1 , wherein the insulating protective layer is grown on a surface of the topological insulator quantum well film by molecular beam epitaxy.3. The topological insulator structure of claim 1 , wherein the topological insulator quantum well film is a magnetically doped topological insulator quantum well film formed by doping a first element and a second element at Sb sites of SbTe.4. The topological insulator structure of claim 3 , wherein the first element is selected from the group consisting of Cr claim 3 , Ti claim 3 , Fe claim 3 , Mn claim 3 , V claim 3 , and combinations thereof claim 3 , and the ...
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