Hall strip micro device

The invention discloses a Hall strip micro device. The Hall strip micro device comprises a substrate, a boss and a thin film layer; the boss is located on the substrate and is in a preset Hall strip shape; the boss comprises a flat upper surface; topological insulator materials are arranged on the surface of the boss to form the thin film layer through the epitaxial growth; the thin film layer is corresponding to the boss in shape. When the three-dimensional topological insulator thin film device is produced, people are surprised to find that (BixSb1-x) 2Te3 materials are changed into a ferromagnetic insulator after the magnetic element chromium is doped. The chromium doped (BixSb1-x) 2Te3 materials are utilized as the thin film layer to produce the three-dimensional topological insulator thin film device, the topological insulator has the edge state, and accordingly the anomalous quantum Hall effect can be measured under the condition of extra-low temperature, namely that the quantum Hall ...