HIGH-SIDE FIELD EFFECT TRANSISTOR

The present invention provides a transistor comprising a substrate having a surface; a first deep well region in the substrate; a second deep well region in the substrate, isolated from and encircling the first deep well region; a first well region in the substrate and on the first deep well region; two second well regions in the second deep well region and respectively at two opposite sides of the first well region; a source region in the first well region and adjacent to the surface; two drain regions in the two second well regions respectively and adjacent to the surface; two gate structures on the surface, wherein each of the two gate structures is between the source region and one of the drain regions respectively; and a guard ring in the substrate encircling the second deep well region, and on the periphery of the transistor. 1. A high-side field effect transistor , comprising:a substrate having a surface;a first deep well region disposed in the substrate;a second deep well region disposed in the substrate, separated from and encircling the first deep well region;a first well region disposed in the substrate and on the first deep well region;two second well regions disposed in the second deep well region and respectively at two opposite sides of the first well region;a source region disposed in the first well region and adjacent to the surface of the substrate;two drain regions disposed in the two second well regions respectively and adjacent to the surface of the substrate;two gate structures disposed on the surface of the substrate, wherein each of the two gate structures is disposed between the source region and one of the drain regions respectively; anda guard ring disposed in the substrate encircling the second deep well region, and on the periphery of the high-side field effect transistor.2. The high-side field effect transistor according to claim 1 , wherein the source region comprises a source contact region with a conductive type different from a ...

Patent TWI560472B

易改變操作角度的手術用通道裝置

一種易改變操作角度的手術用通道裝置，包含一固定單元、一轉動單元、一身件及一頭件。該固定單元的一固定件具有圍繞一軸線的一本體，及一自該本體成型的底筒，該轉動單元包括一可相對該固定件繞該軸線轉動的轉動件，該身件包括一中空保護體，及一位於該中空保護體頂部用以套置定位於該底筒的頂定位體，該頭件包括一承載塊，及設置於該承載塊供數手術器具插置的數連接埠。藉此，可以輕易改變該等手術器具的位置以提高操作便利性。

無線傳輸投影機

Wound protector

食品包装用バリアフィルム及びその製造方法

【課題】本発明は、食品包装用バリアフィルム及びその製造方法を提供する。【解決手段】前記製造方法は、基材フィルムを提供することと、前記基材フィルムの表面にお互いに積層した第１の無機材料蒸着層と第２の無機材料蒸着層とを少なくとも備えた無機積層フィルムを蒸着することと、前記無機積層フィルムにバリア塗布液を塗布し、前記バリア塗布液を硬化することで、バリア塗布層を形成することと、を含む。なかでも、前記第１の無機材料蒸着層及び第２の無機材料蒸着層のそれぞれは、同一の真空蒸着プロセスで、真空が維持されたまま、異なる無機金属酸化物で形成される。【選択図】図１

改良型自激式推挽型轉換電路

Improved clip structure of electrical cable

Structural improvement of blade rack of ceiling fan

智慧型手機行動櫃

Guiding lid for catheter needle

Buffering warning cushion

Fast and automatic channel-scanning method

顯示器的支架結構

Packaging cushion material with variety sizes positioning features

Single-span laparoscope compound-port mask apparatus

High-side field effect transistor

The present invention provides a transistor comprising a substrate having a surface; a first deep well region in the substrate; a second deep well region in the substrate, isolated from and encircling the first deep well region; a first well region in the substrate and on the first deep well region; two second well regions in the second deep well region and respectively at two opposite sides of the first well region; a source region in the first well region and adjacent to the surface; two drain regions in the two second well regions respectively and adjacent to the surface; two gate structures on the surface, wherein each of the two gate structures is between the source region and one of the drain regions respectively; and a guard ring in the substrate encircling the second deep well region, and on the periphery of the transistor.