A Combined Mold Core for Supercharged Multichannel Pipe Divergent Die

Electronic display with hybrid in-pixel and external compensation

A display pixel is provided that is operable to support hybrid compensation scheme having both in-pixel threshold voltage canceling and external threshold voltage compensation. The display may include multiple p-type silicon transistors with at least one n-type semiconducting-oxide transistor and one storage capacitor. An on-bias stress phase may be performed prior to a threshold voltage sampling and data programming phase to mitigate hysteresis and improve first frame response. In low refresh rate displays, a first additional on-bias stress operation can be performed separate from the threshold voltage sampling and data programming phase during a refresh frame and a second additional on-bias stress operation can be performed during a vertical blanking frame. The display pixel may be configured to receive an initialization voltage and an anode reset voltage, either of which can be dynamically tuned to match the stress of the first and second additional on-bias stress operations to minimize ...

Image display controller for display shelf

An image display controller for a display shelf generates image data for a projector image which is projected by a projector arranged in the display shelf to be displayed on a transmission-type screen of the display shelf. The image display controller includes a monitor, an input device, a data communicator, a memory, and a controller. The controller obtains an editing background image from the memory and displays the editing background image on the monitor, and generates contents of a display image. Moreover, the controller sets a position of the generated display image in a desired position of a display area of the editing background image in response to an instruction inputted via the input device, and generates the projector image by combining the generated display image into the editing background image at the set position.

PRE-ANNEAL OF COSI, TO PREVENT FORMATION OF AMORPHOUS LAYER BETWEEN TI-O-N AND COSI

The present invention provides a method for forming an interconnect to a cobalt or nickel silicide having a TiN diffusion barrier. The inventive method comprises providing an initial structure having vias to exposed silicide regions positioned on a substrate; annealing the initial structure in a nitrogen-containing ambient, wherein a nitrogen passivation layer is formed atop the exposed silicide region; depositing Ti atop the nitrogen passivation layer; annealing the Ti in a nitrogen-containing ambient to form a TiN diffusion barrier and an amorphous Ti cobalt silicide between the TiN diffusion layer and the cobalt or nickel silicide and depositing an interconnect metal within the vias and atop the TiN diffusion barrier. The nitrogen passivation layer substantially restricts diffusion between the Ti and silicide layers minimizing the amorphous Ti cobalt silicide layer that forms. Therefore, the amorphous Ti cobalt or Ti nickel silicide is restricted to a thickness of less than about 3.0 ...

Thermally induced reflectivity switch for laser thermal processing

A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region. The reflectivity of the reflectivity switch layer changes from a low reflectivity state to a high reflectivity state at a critical temperature ...

Superconducting junctions

Provided are superconducting tunnel junctions, such as Josephson tunnel junctions, and a method of fabricating thereof. A junction includes an insulator disposed between two superconductors. The junction may also include one or two interface layers, with each interface layer disposed between the insulator and one of the superconductors. The interface layer is configured to prevent oxygen from entering the adjacent superconductor during fabrication and operation of the junction. Furthermore, the interface layer may protect the insulator from the environment during handling and processing of the junction, thereby allowing vacuum breaks after the interface layer is formed as well as new integration schemes, such as depositing a dielectric layer and forming a trench in the dielectric layer for the second superconductor. In some embodiments, the junction may be annealed during its fabrication to move oxygen from the superconductors and/or from the insulator into the one or two interface layers ...

Two stage forming of resistive random access memory cells

Provided are memory cells, such as resistive random access memory (ReRAM) cells, each cell having multiple metal oxide layers formed from different oxides, and methods of manipulating and fabricating these cells. Two metal oxides used in the same cell have different dielectric constants, such as silicon oxide and hafnium oxide. The memory cell may include electrodes having different metals. Diffusivity of these metals into interfacing metal oxide layers may be different. Specifically, the lower-k oxide may be less prone to diffusion of the metal from the interfacing electrode than the higher-k oxide. The memory cell may be formed to different stable resistive levels and then resistively switched at these levels. Each level may use a different switching power. The switching level may be selected a user after fabrication of the cell and in, some embodiments, may be changed, for example, after switching the cell at a particular level.

Heterocyclic compounds and use thereof

Heterocyclic compounds of Formula (I) shown herein. Also disclosed is a pharmaceutical composition containing one of the heterocyclic compounds. Further disclosed are methods of using one of the heterocyclic compounds for mobilizing hematopoietic stem cells and endothelial progenitor cells into the peripheral circulation, and for treating tissue injury, cancer, inflammatory disease, and autoimmune disease.

Fast thermal annealing of GaN LEDs

Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing having a time duration of 10 seconds or faster. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.

Method and System of Improved Uniformity Testing

A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold ...

NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A NOVEL SWITCHING LAYER

A nonvolatile resistive memory element has a novel variable resistance layer comprising one or more rare-earth oxides. The rare-earth oxide has a high k value, a high bandgap energy, and the ability to maintain an amorphous structure after thermal anneal processes. Thus, the novel variable resistance layer facilitates improved switching performance and reliability of the resistive memory element.

NONVOLATILE MEMORY DEVICE HAVING A CURRENT LIMITING ELEMENT

Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., set and reset steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device.

Tail gas treatment catalyst, preparation method therefor and use thereof

Disclosed in the present invention is a tail gas treatment catalyst. The catalyst consists of a carrier, a first catalyst, and a second catalyst. The first catalyst and the second catalyst are provided on both ends of the carrier. The first catalyst can purify pollutants in tail gas. The second catalyst can purify a byproduct, ammonia, obtained by the purification by the first catalyst and pollutants that are not completely purified by the first catalyst. The second catalyst is of a double-layer structure; the lower layer consists of an oxygen storage material, aluminum oxide, and a second active component; the second active component is a composition of Pt and Pd, or a composition of Ce, Fe, Ni and Cu; the upper layer consists of a molecular sieve and a third active component; the third active component is Cu or a composition of Cu and Fe. The tail gas treatment catalyst of the present invention has high purification treatment efficiency, and can significantly reduce the emissions of CH4 ...

Circuit board arrangement to prevent overvoltage and arcing

A circuit board arrangement assembled by at least a first and a second circuit boards, each circuit board comprising: a portion of a circuit; and a first and a second electrical terminals to be electrically connected to a respective first and a second electrical terminals of the other circuit board of the first and the second circuit boards, so as to couple the portions of the circuit of the first and the second circuit boards, wherein the first and second electrical terminals on the circuit board are coupled with each other via the portion of the circuit on the other circuit board of the first and the second circuit boards, at least one board further comprising: a voltage suppression element (TSS1, TSS2) in the board connected across the first and second electrical terminals of the board, said voltage suppression element (TSS1, TSS2) is adapted to become conductive when a voltage thereacross reaches a threshold; characterized in that the portion of the circuit comprising at least one LED ...

Device for detecting service life of electronic component

Disclosed is a device for detecting the service life of an electronic component (3), the device comprising a workbench (1), a detection module, a piezoelectric ceramic drive power source (8), an alternating-current power source module and a counting module. The detection module comprises a piezoelectric ceramic driver (2) and two identical detection circuits connected in parallel at two ends of the alternating-current power source module. The detection circuits are connected in series via the electronic component (3) and reset switches (9). The reset switches (9) are respectively located on two sides of a metal sheet (203) in the piezoelectric ceramic driver (2), the piezoelectric ceramic driver (2) is electrically connected to the piezoelectric ceramic drive power source (8), and the piezoelectric ceramic drive power source (8) generates an alternating electric field to make the metal sheet (203) produce vibration and deformation so that the reset switch (9) located on the side, generating ...

Combined mold core for supercharged multichannel pipe divergent mold

A combined mold core for a supercharged multichannel pipe divergent mold, which relates to the field of micro-bore-size multichannel pipe preparation. The combined mold core comprises a mold core (1), a lower mold (3), and a lower mold supporting plate (6). A lower mold through hole (4) is formed n the center of the lower mold (3). The outer contour of the lower mold supporting plate (6) is same as the shape and the size of the lower mold through hole (4), and the thickness of the lower mold supporting plate (6) is smaller than that of the lower mold (3), and the lower mold supporting plate (6) is located inside the lower mold through hole (4). Multiple upper mold core needles (2) are mounted at the bottom of the mold core (1), and multiple lower mold core needles (5) matching the upper mold core needles (2) are mounted on the top of the lower mold supporting plate (6). Two transverse sliding grooves (10) are symmetrically formed in the inner wall of the lower mold (3). Springs (8) and ...

Method and System of Improved Uniformity Testing

A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

Thermally induced reflectivity switch for laser thermal processing

A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region. The reflectivity of the reflectivity switch layer changes from a low reflectivity state to a high reflectivity state at a critical temperature ...

System and method to provide file level restore

A method and system for providing file level restore (FLR) service for restoring one or more files stored in a plurality of file systems in a backup of a first virtual machine is provided. The method creates a FLR session for a user, including: creating a virtual disk file in a second virtual machine providing the FLR service, the virtual disk file including an empty file system being mounted as a root folder of a virtual appliance in the second virtual machine; creating a respective folder for each of the plurality of file systems under the root folder; mounting each of the plurality of file systems to the respective folder; and mounting the root folder to a folder of the second virtual machine. The method restores the one or more files by the user through accessing the folder of the second virtual machine in the FLR session.

Methods and compounds for modulating the secretion or expression of adhesion proteins or angiopoietins of cells

This invention provides methods, processes, compounds and compositions for modulating the gene expression or secretion of adhesion proteins, angiopoietins or their receptors to cure diseases, for anti-angiogenesis and for treating parasites, wherein the adhesion proteins or receptors comprise fibronectin, integrins family, myosin, vitronectin, collagen, laminin, glycosylation cell surface proteins, polyglycans, cadherin, heparin, tenascin, CD 54, CAM, elastin and FAK; wherein the angiopoietins comprise angiopoietin 1, angiopoietin 2, angiopoietin 3, angiopoietin 4, angiopoietin 5, angiopoietin 6, angiopoietin 7, angiopoietin-like 1, angiopoietin-like 2, angiopoietin-like 3, angiopoietin-like 4, angiopoietin-like 5, angiopoietin-like 6, and angiopoietin-like 7; wherein the cancers comprise breast cancer, leukocyte cancer, liver cancer, ovarian cancer, bladder cancer, prostate cancer, skin cancer, bone cancer, brain cancer, leukemia cancer, lung cancer, colon cancer, CNS cancer, melanoma ...

Optimizing aggregate processing

Disclosed is method for processing an aggregate function. Rows that contain a reference to intermediate result structures are grouped to form groups. For each group, aggregate element structures are formed from the intermediate result structures and, if the aggregate function specifies ordering, the aggregate element structures are sorted based on a sort key.

System method for memory virtualization control logic for translating virtual memory in space of guest memory based on translated codes in response to memory failure

A virtualization based system comprises a host and a plurality of virtual machines that may each comprises a guest memory. A virtual machine monitor has access to underlying platform hardware in the system and may control physical resources in the platform. The platform hardware comprises a processor and a memory coupled to the processor. Further, the VMM may manage guest software including guest operating systems running on the virtual machines. A binary translation logic may replace guest memory writing instructions corresponding to a hot spot in guest application with translated codes to generate a mirrored content for the guest memory. The binary translation logic may combine one or more of the guest memory writing instructions in a region and keep the region atomic. The processor may execute the translated codes in an atomic region together to write a content in the guest memory and a mirrored content in a mirroring memory. The VMM may allocate a memory region in the host memory for ...

BRIGHTNESS CONTROL ARCHITECTURE

Display panels and methods for operating a display panel are described. In an embodiment, the display panel includes a plurality of pixels arranged in rows and columns, a plurality of rows of emission control lines extending through the plurality of rows of pixels, and a global emission line coupled to the plurality of rows of emission control lines. Modes of operation of the display panel include global flash mode and low persistence mode.

High Throughput Current-Voltage Combinatorial Characterization Tool and Method for Combinatorial Solar Test Substrates

Measuring current-voltage (I-V) characteristics of a solar cell using a lamp that emits light, a substrate that includes a plurality of solar cells, a positive electrode attached to the solar cells, and a negative electrode peripherally deposited around each of the solar cells and connected to a common ground, an articulation platform coupled to the substrate, a multi-probe switching matrix or a Z-stage device, a programmable switch box coupled to the multi-probe switching matrix or Z-stage device and selectively articulating the probes by raising the probes until in contact with at least one of the positive electrode and the negative electrode and lowering the probes until contact is lost with at least one of the positive electrode and the negative electrode, a source meter coupled to the programmable switch box and measuring the I-V characteristics of the substrate.

NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A CURRENT LIMITER ELEMENT

Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones ...

Method and system for obtaining product prototype based on eye movement data

A method and a system for obtaining a product prototype based on an eye movement data. The method comprises the following steps: Obtaining A front-side view of the target product for establishing a underlying sample library; The target product is divided into several detection areas according to its structure or function features, and the eye movement is detected to obtain the fixation time of the target product The invention adopts computer and image collecting technology to process the observation data of human eyes, and adopts K-means clustering to obtain the prototype of the target product, to assist the designer to grasp the categories of personal interest contour, so as to improve the design effect of product appearance.

Method and system for generating imagery mapping modeling of goblet

A method and a system for generating imagery mapping modeling of goblet. The method includes: pre-process collected goblets based on a height of each goblet, and establish a sample library of goblet modeling features; perform dimension reduction processing on the imagery vocabulary, and establish a goblet user imagery adjective pair based on the processing result; a relationship between the goblet modeling and imagery adjective is obtained through the sample library of goblet modeling features and the goblet user imagery adjective pair, and an optimal imagery value is established; input an user-entered imagery value into to the established optimal goblet imagery mapping modeling model, and produces a goblet shape meets an index. It realize users' demand for imagery modeling for the goblet and provide a fast and effective new idea for updating and iterating the goblet modeling scheme with a genetic algorithm and a computer programming technology.

Environmentally friendly capsular bag-type downhole karst cave blocking device and blocking method therefor

Disclosed is an environmentally friendly capsular bag-type downhole karst cave blocking device, relating to the field of petroleum drilling, and mainly being used to block a downhole karst cave. The device comprises mechanical parts, such as a connecting rod, hinges (309, 310, 311), springs (407, 408), a one-way valve (204), a slide rail (102), a sensor (405), a ratchet and electromagnets (402, 404) in a combined transmission manner. The automatic karst cave blocking of the whole environmentally friendly capsular bag-type downhole karst cave blocking device is realized by means of a capsular bag. Further disclosed is an environmentally friendly capsular bag-type downhole karst cave blocking method. The device and method reduce the requirements for a leakage blocking material and a drill pipe, reduce the costs and time needed for blocking a karst cave, and can be used in large karst cave and honeycomb-shaped karst carve scenarios.

Embedded Nonvolatile Memory Elements Having Resistive Switching Characteristics

Provided are nonvolatile memory assemblies each including a resistive switching layer and current steering element. The steering element may be a transistor connected in series with the switching layer. Resistance control provided by the steering element allows using switching layers requiring low switching voltages and currents. Memory assemblies including such switching layers are easier to embed into integrated circuit chips having other low voltage components, such as logic and digital signal processing components, than, for example, flash memory requiring much higher switching voltages. In some embodiments, provided nonvolatile memory assemblies operate at switching voltages less than about 3.0V and corresponding currents less than 50 microamperes. A memory element may include a metal rich hafnium oxide disposed between a titanium nitride electrode and doped polysilicon electrode. One electrode may be connected to a drain or source of the transistor, while another electrode is connected ...

Non-preemption of a group of interchangeable tasks in a computing device

A non-preemption task group apparatus comprises a scheduling module that identifies a first task that is one of executing and scheduled to execute on a processor during a first time slice and a second task to be executed on a processor during a subsequent time slice, the first slice occurring before the subsequent slice, a relationship module that compares the first task to the second task, and an examining module that identifies whether the first task and the second task are interchangeable tasks based on the comparison, wherein the first task executes during the subsequent time slice in response to the first task and the second task being identified as interchangeable.

Current-limiting layer and a current-reducing layer in a memory device

A current-limiting layer and a current-reducing layer are incorporated into a resistive switching memory device to form memory arrays. The incorporated current-limiting layer reduces the occurrence of current spikes during the programming of the resistive switching memory device and the incorporated current-reducing layer minimizes the overall current levels that can flow through the resistive switching memory device. Together, the two incorporated layers help improve device performance and lifetime.

METHOD, APPARATUS AND COMPUTER PROGRAM PRODUCT FOR MANAGING DATA BACKUP

Embodiments of the present disclosure relate to a method, apparatus and computer program product for managing a data backup. The method comprises determining a first data amount to be involved in an addressing operation and a second data amount to be involved in a copy operation for an extent to be backed up on a source storage device, the addressing operation addressing a starting address of the extent and the copy operation copying an amount of data corresponding to a length of the extent. The method further comprises obtaining, based on an identifier of the source storage device, a first historical time elapsed for a previous addressing operation having the first data amount and a second historical time elapsed for a previous copy operation having the second data amount.

COMPOSITE CAST-IN-SITU OUTER WALL AND CONSTRUCTION METHOD THEREOF

A composite cast-in-situ outer wall and a construction method thereof are provided, wherein the composite cast-in-situ outer wall comprises a concrete wall and a composite plate, wherein a hole for windows is defined in the middle of the concrete wall, and the composite plate is arranged below the hole for windows; the composite plate is embedded into the concrete wall and is fixedly connected to the concrete wall. According to the present application, the concrete pouring can be implemented along with a connected wall body, and thus a one-time integral pouring is achieved; meanwhile, the evenness of the wall surface is ensured, and thus the construction efficiency and construction quality are improved.

A filling device and the method for filling solid lubricant in micro texture

Heater for wafer processing and methods of operating and manufacturing the same

A heater for wafer processing, such as thin film deposition, comprises a first heating unit and a second heating unit. The first heating unit comprises a substrate with a top surface for supporting a wafer thereon and a back surface. The second heating unit is disposed proximate the back surface of the substrate and is preferably disposed inside an inner space of a shaft supporting the first heating unit in a processing chamber. The first heating unit and the second heating unit are independently controlled. The second heating unit is designed based on the actual temperature profile and heat loss on the top surface. Therefore, the second heating unit can more effectively compensate the heat loss to achieve a more uniform temperature profile on the top surface.

Supporting Heterogeneous Virtualization

Machine-readable media, methods, apparatus and system are described. In some embodiments, a virtual machine monitor of a computer platform may comprise a service virtual machine created by the virtual machine monitor partitioning an underlying hardware machine to support execution of a plurality of overlying guest operating systems, wherein the plurality of guest operating systems comprise a guest operating system complying with a non-native guest system architecture different from a host system architecture with which the hardware machine complies. The service virtual machine may further comprise a translation layer to translate instructions from the guest operating system complying with the non-native guest system architecture into instructions complying with the host system architecture.

Interconnect structures comprising capping layers with low dielectric constants and methods of making the same

Interconnect structures comprising capping layers with low dielectric constants and good oxygen barrier properties and methods of making the same are provided. In one embodiment, the integrated circuit structure comprises: an interlevel dielectric layer disposed above a semiconductor substrate; a conductive interconnect embedded in the interlevel dielectric layer; a first capping layer comprising SiwCxNyHz disposed upon the conductive interconnect; a second capping layer comprising SiaCbNcHd (has less N) having a dielectric constant less than about 4 disposed upon the first capping layer; and a third capping layer comprising SiwCxNyHz disposed upon the second capping layer, wherein a+b+c+d=1.0 and a, b, c, and d are each greater than 0 and less than 1, and wherein w+x+y+z=1.0 and w, x, y, and z are each greater than 0 and less than 1.

Nonvolatile memory device using a varistor as a current limiter element

Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld ...

System and method for replication of one or more databases

This invention is a system and method for managing replication of data in a data storage environment by grouping logical devices. The system is enabled for configuring, monitoring, and controlling replication processes in accordance with a replication policy that is particularly useful when combined with grouping of logical devices used in replication. The invention is useful for replicating essentially an entire copy of a production-level database such that the copy may be used essentially as the production-level database itself.

NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A METAL NITRIDE CONTAINING SWITCHING LAYER

A nonvolatile resistive memory element has a novel variable resistance layer that includes a metal nitride, a metal oxide-nitride, a two-metal oxide-nitride, or a multilayer stack thereof. One method of forming the novel variable resistance layer comprises an interlayer deposition procedure, in which metal oxide layers are interspersed with metal nitride layers and then converted into a substantially homogeneous layer by an anneal process. Another method of forming the novel variable resistance layer comprises an intralayer deposition procedure, in which various ALD processes are sequentially interleaved to form a metal oxide-nitride layer. Alternatively, a metal oxide is deposited, nitridized, and annealed to form the variable resistance layer or a metal nitride is deposited, oxidized, and annealed to form the variable resistance layer.

Methods and apparatus to support mixed-mode execution within a single instruction set architecture process of a virtual machine

Methods and apparatus to support the execution of a managed application that is linked to a native library or application are disclosed. The disclosed methods and apparatus support a virtual machine that is associated with the same ISA as the executing platform, while the ISA of the native library or application is of a different ISA. The disclosed methods and apparatus also support the execution of a managed application that is linked with several native libraries or applications that are associated with several different ISAs respectively.

Optimized translation of scalar type SIMD instructions into non-scalar SIMD instructions

An arrangement is provided for translating a plurality of scalar single instruction multiple data stream (SIMD) instructions into a plurality of optimized non-scalar SIMD instructions to be executed on a target architecture supporting only parallel SIMD instructions. After receiving a plurality of scalar SIMD instructions, translation from the scalar SIMD instructions to non-scalar SIMD instructions is performed. The translation is optimized so that the number of translated non-scalar SIMD instructions is minimized. The translated non-scalar SIMD instructions are executed on a target architecture that supports only parallel SIMD instructions.

Glass with High Refractive Index for Fiber Optic Imaging Element with Medium-Expansion and Fabrication Method Therefor

The present invention discloses a glass with high refractive index for fiber optic imaging elements with medium-expansion and fabrication method therefor, the glass comprising the following components in percentage by weight: SiO2 5-9%, Al2O3 0-1%, B2O3 23-28%, CaO 0-3%, BaO 6-12%, La2O3 30-34%, Nb2O5 4-8%, Ta2O5 0-1%, Y2O3 0-1%, ZnO 4-9%, TiO2 4-8%, ZrO2 4-6%, SnO2 0-1%. The present invention further provides a fabrication method for the glass with a high refractive index, comprising: putting raw materials quartz sand, aluminum hydroxide, boric acid or boric anhydride, calcium carbonate, barium carbonate or barium nitrate, lanthanum oxide, niobium oxide, tantalum oxide, yttrium oxide, zinc oxide, titanium dioxide, zirconium oxide and stannic oxide, etc. into a platinum crucible according to the requirement of dosing, melting at a high temperature, cooling and fining, leaking and casting to form a glass rod, and then annealing, cooling and chilling the molded glass rod.

Lighting apparatus

A lighting apparatus includes a LED module, a light source plate, a heat sink, an antenna, a driver and a light housing. The light source plate is used for holding the LED module. The heat sink has a bottom plate and a lateral wall. The light source plate is placed on the bottom plate. The antenna is disposed on the lateral wall. The driver is used for generating a driving current to the LED module. The driver has a wireless circuit. The wireless circuit is electrically connected to the antenna for transmitting a wireless signal. The light housing is used for holding the heat sink so that the LED module emits light toward a light opening of the light housing.

Filling device and method for filling micro-texture pits with solid lubricating material

The invention provides a filling device and method for filling a micro-texture with a solid lubricating material. The device comprises a supporting system, a filling system, a multi-station mold rotation system, a locking system, a mold head spacing adjustment system, and a control system. By application of the multi-station mold rotation system and the mold head spacing adjustment system, continuous processing can be implemented, and filling requirements of different sizes and different pitch textures can be satisfied. The device can directly press solid lubricating material into a micro-texture of a workpiece surface, which is a purely physical filling method, without modifying properties of the workpiece. Moreover, the filling device is easily operated, has low requirements on working conditions, is efficient and low-cost, and can be easily automated.

Magnetic drive-type apparatus for strengthening inner surface of tapered hole

Optimization of high volume transaction performance on a blockchain

An example operation may include one or more of identifying a newly proposed transaction of a blockchain, initiating a consensus operation to determine whether to authorize the newly proposed transaction, retrieving a key- value pair identified from a previous transaction, comparing an index value associated with the key-value pair of the previous transaction to an index value associated with a key-value pair of the newly proposed transaction, and providing an affirmative consensus to accept the newly proposed transaction in the blockchain when the index value associated with the key-value pair of the previous transaction is contiguously sequential with theindex value associated with the key-value pair of the newly proposed transaction.

Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect structures and method thereof

An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Methods and apparatus to support mixed-mode execution within a single instruction set architecture process of a virtual machine

Methods and apparatus to support the execution of a managed application that is linked to a native library or application are disclosed. The disclosed methods and apparatus support a virtual machine that is associated with the same ISA as the executing platform, while the ISA of the native library or application is of a different ISA. The disclosed methods and apparatus also support the execution of a managed application that is linked with several native libraries or applications that are associated with several different ISAs respectively.

Method, system, and program for optimizing aggregate processing

Disclosed is a method, system, and program for processing an aggregate function. Rows that contain a reference to intermediate result structures are grouped to form groups. For each group, aggregate element structures are formed from the intermediate result structures and, if the aggregate function specifies ordering, the aggregate element structures are sorted based on a sort key.

COF, COF CARRIER TAPE AND DRIVE CIRCUIT OF LIQUID CRYSTAL TELEVISION

An LCD panel, a manufacturing method and a manufacturing apparatus of the same are provided. The manufacturing method includes the following steps. The first substrate and the second substrate are combined and liquid crystal is disposed between the two substrates to form the LCD panel. The first substrate and the second substrate are fused. In the present disclosure, the interior of the combined LCD panel is isolated from the outside atmosphere by fusing the combined LCD panel. Therefore, the LCD panel can stay in the air for a long time without being damaged, thus solving the problem in the prior art that the atmosphere may break the sealant of the LCD panel in the manufacturing process of the LCD panel to cause the liquid crystal leakage.

LIQUID CRYSTAL COATING APPARATUS AND LIQUID CRYSTAL COATING METHOD

The present invention provides a liquid crystal (LC) coating apparatus and an LC coating method. The LC coating apparatus comprises a plurality of liquid crystal coating devices, at least one real-time detector and a controller. The LC coating method comprises the following steps: utilizing the LC coating devices to coat a LC on a substrate; utilizing the real-time detector to real-time detect the LC coated on the substrate and outputting a detection signal; and utilizing the controller to control the LC coating devices according to the detection signal. The present invention can real-time monitor the coating status of the LC for coating and forming a uniform LC film.

Strains of zymomonas mobilis for fermentation of biomass

The present invention relates to methods of obtaining Z. mobilis mutant strains that are more tolerant to one or more inhibitors or more capable of efficiently fermenting one or more carbohydrates. Such inhibitors include ethanol, aliphatic acids, such as acetic acid, formic acid; furan derivatives, such as 2-furaldehyde, 2-furoic acid; and phenolic compounds, such as vanillin and hydroxybenzoic acid. Such carbohydrates may include xylose, arabinose, mannose and mixtures thereof. These mutant strains may be employed to, for example, effectively and efficiently prepare ethanol from biomass.

Environmentally friendly capsular bag-type downhole karst cave blocking device and blocking method therefor

Visual stereo dynamic 3D detection device for fluid spraying

A stereo 3D detection device for fluid spraying has a peening system, a camera system, a sample stage system, a sample transfer mechanism, and a scan analysis system. The sample stage system has first and second clamping plates 18, 20 opposite each-other, and has several corresponding slots from top to bottom to clamp the samples. A high-speed camera 14, which may be on an angle adjustable mount 12, images the peening process and sends the data to analyser 9. The sample transfer mechanism transfers the sample to the scan analysis system which includes a scanner 4 and analyser 9 which processes the data from the camera and scanner to produce a stereo image of the effect of the peening process at different sample heights. The peening system may have a nozzle 16 connected to a peening medium container 13 and a mount 17 for adjusting its vertical and horizontal position. The system may also be used to analyse a flame spraying process.

METHOD FOR ENHANCED UNI-DIRECTIONAL DIFFUSION OF METAL AND SUBSEQUENT SILICIDE FORMATION

The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer. The first thermal cycle causes an amorphous metal-containing silicide to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy layer from the structure. A second anneal is performed to convert the metal rich silicide phase formed by the two ...

SYSTEMS AND PROCESSES FOR FORMING THREE-DIMENSIONAL INTEGRATED CIRCUITS

Provided are systems and processes for forming a three-dimensional circuit on a substrate. A radiation source produces a beam that is directed at a substrate having an isolating layer interposed between circuit layers. The circuit layers communicate with each other via a seed region exhibiting a crystalline surface. At least one circuit layer has an initial microstructure that exhibits electronic properties unsuitable for forming circuit features therein. After being controllably heat treated, the initial microstructure of the circuit layer having unsuitable properties is transformed into one that exhibits electronic properties suitable for forming circuit feature therein. Also provided are three-dimensional circuit structures optionally formed by the inventive systems and/or processes.

Laser annealing of GaN LEDs with reduced pattern effects

The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.

Method and System of Improved Reliability Testing

A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

Debugging and simulating application runtime execution

In an approach for debugging and simulating application runtime execution, a processor loads source code and logs into a debug tool. A processor generates log debug information including a log map, a log variable cross reference table, and a method call stack tree. A processor determines a plurality of log blocks based on log context in the logs and the method call stack tree. A processor maps the source code to the logs for each log block. A processor suggests a starting point and a breakpoint based on the log variable cross reference table and the log blocks. A processor compares a source code variable value to a log variable value and a source code execution path to a log execution path based on the mapping set between the source code and the logs. A processor simulates the source code variable value with the log variable value.

System and method for compensation of functional differences between heterogeneous database management systems

A system and method for compensating for functional differences between heterogeneous database management systems, wherein data associated with a client is distributed among the heterogeneous database management systems, is discussed. The system simulates support of multiple pending actions on a single connection in any of the heterogeneous database management systems which does not support multiple pending actions on a single connection. Also, the system: (1) simulates support of cursors declared "with hold" in any of the heterogeneous database management systems which does not support cursors declared "with hold"; (2) simulates support of positioned update actions in any of the heterogeneous database management systems which does not support positioned update actions; (3) simulates support of host variables in any of the heterogeneous database management systems which does not support host variables; and (4) compensates for security log-in procedure differences between the heterogeneous ...

Composition comprising Xanthoceras sorbifolia extracts, compounds isolated from same, methods for preparing same and uses thereof

This invention provides compositions, methods and process of producing extracts from Xanthoceras sorbifolia. The extract comprises alkaloids, coumarins, saccharides, proteins, polysaccharides, glycosides, saponins, tannins, acid, flavonoids and others. The composition can be used for treating breast, leukocyte, liver, ovarian, bladder, prostate, bone or brain cancer. This invention provides compounds comprising at least one sugar, a triterpene, such as Sapogenin, and at least one side chains at Carbon 21 and 22, such as Angeloyl groups. The compounds of the present have various pharmaceutical and therapeutic applications, including treating breast, leukocyte, liver, ovarian, bladder, prostate, bone or brain cancer.

Apparatus and method for preparing continuous carbon fibre reinforced thermoplastic resin matrix prepreg

An apparatus and a method for preparing continuous carbon fibre reinforced thermoplastic resin matrix prepreg; by means of the coordination of a left wedge-shaped pendulum block (22) and a right wedge-shaped pendulum block (24) with a first left elastic tension roller (4) and a first right elastic tension roller (5) respectively, implementing carbon fibre loose bundling, fibre opening, and tensioning; by means of the contact and rapid downward pressure of the left wedge-shaped pendulum block (22) and the right wedge-shaped pendulum block (24) with a second left elastic tension roller (6) and a second right elastic tension roller (7) respectively, causing a tensioned carbon fibre bundle (2) to perform rapid vertical downward cutting of a molten matrix resin film (9) in order to be encapsulated in same, and thereby implementing embedding and encapsulation of the carbon fibre bundle in a thermoplastic matrix resin; by means of secondary compaction by subsequent pressure rollers, preparing ...

SYSTEM AND METHOD FOR INCREASING PRODUCTIVITY OF ORGANIC LIGHT EMITTING DIODE MATERIAL SCREENING

A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.

High Throughput Quantum Efficiency Combinatorial Characterization Tool and Method for Combinatorial Solar Test Substrates

Simultaneous measurement of an internal quantum efficiency and an external quantum efficiency of a solar cell using an emitter that emits light; a three-way beam splitter that splits the light into solar cell light and reference light, wherein the solar cell light strikes the solar cell; a reference detector that detects the reference light; a reflectance detector that detects reflectance light, wherein the reflectance light comprises a portion of the solar cell light reflected off the solar cell; a source meter operatively coupled to the solar cell; a multiplexer operatively coupled to the solar cell, the reference detector, and the reflectance detector; and a computing device that simultaneously computes the internal quantum efficiency and the external quantum efficiency of the solar cell.

HEAVY-CURRENT SYSTEM AND HEAVY-CURRENT DISTRIBUTOR USED IN BUILDING

A heavy-current system, and a heavy-current distributor used in a building are provided; the heavy-current system comprises a plurality of first distributors respectively installed in different positions, and a plurality of electric equipments; each of the first distributors includes a PCB board, a power transmission copper bar, an inlet port, and a plurality of groups of connection ports; wherein the power transmission copper bar, the inlet port and the connection ports are arranged on the PCB board; the inlet port and the connection ports are further electrically connected to each other via the power transmission copper bar; the inlet port of the first distributor is connected to the distribution box via power transmission line, and the electric equipments are respectively connected to the inlet port of one of the first distributors via the power transmission lines.

Atomic layer deposition of metal oxide materials for memory applications

Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional ...

Optimized translation of scalar type SIMD instructions into non-scalar SIMD instructions

An arrangement is provided for translating a plurality of scalar single instruction multiple data stream (SIMD) instructions into a plurality of optimized non-scalar SIMD instructions to be executed on a target architecture supporting only parallel SIMID instructions. After receiving a plurality of scalar SIiVLD instructions, translation from the scalar SIMD instructions to non-scalar SIMD instructions is performed. The translation is optimized so that the number of translated non-scalar SIMD instructions is minimized. The translated non-scalar SIIViD instructions are executed on a target architecture that supports only parallel SIMD instructions.

Composition comprising Xanthoceras sorbifolia extracts, compounds isolated from same, methods for preparing same and uses thereof

This invention provides compositions, methods and process of producing extracts and pure compounds from Xanthoceras sorbifolia. The extract comprises saponins and other constituents including alkaloids, coumarins, saccharides, proteins, polysaccharides, glycosides, tannins, acid, flavonoids and others. The composition can be used for treating cancer and other conditions, such as arthritis, rheumatism, poor circulation, arteriosclerosis, Raynaud's syndrome, angina pectoris, cardiac disorder, coronary heart disease, headache, kidney disorder, and impotence; for improving cerebral functions; or for curing enuresis, frequent micturition, urinary incontinence, dementia, weak intelligence and Alzheimer's disease, autism, brain trauma, Parkinson's, cerebral dysfunctions, and treating arthritis, rheumatism, poor circulation, arteriosclerosis, Raynaud's syndrome, angina pectoris, cardiac disorder, headache, dizziness, kidney disorder. This invention provides compounds of oleanene triterpenoidal ...

XSLT-specific XJIT compiler

An Extensible Stylesheet Language Transformation (XSLT) processing environment receives an XSLT style sheet and an Extensible Markup Language (XML) input document. The XSLT style sheet is compiled into XSL byte code fragments. A just-in-time (JIT) compiler in the XSLT processing environment compiles the XSL byte code fragments into native code. The native code is executed to transform the XML input document into one or more XML output documents.

Metal organic chemical vapor deposition of resistive switching layers for ReRAM cells

Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof using metal organic chemical vapor deposition (MOCVD). Specifically, the MOCVD is used to form a resistive switching layer including oxides of at least two elements. The resistive switching layer may have a variable composition throughout its thickness, which may be achieved by dynamically varying flow rates of metal organic precursors during MOCVD of the resistive switching layer. In some embodiments, the first element may be a transition metal, while the second element may be a component forming an insulating oxide. The second element may be concentrated in the middle of the resistive switching layer between its bottom and top sides and may not be present at either one of these sides. Such distribution of materials allows controlling the size and composition of a switching zone within the resistive switching layer and reducing power needed for switching.

Composition comprising wenguanguo extracts, methods for preparing same and uses thereof

This invention provides a composition comprising extracts from the husk of Wenguanguo and a process of producing the combined extract comprising the following steps: extracting Wenguanguo husks with an organic solvent to form an organic extract; removing the organic solvent from the extract to form aqueous extracts; and drying and sterilizing the aqueous extracts to form the combined extracts. The extracts can be used to make medicines or health foods for preventing cerebral aging, improving memory, improving cerebral functions and curing enuresis, frequent micturition, urinary incontinence, dementia, weak intelligence and Alzheimer's disease and other diseases caused by cerebral dysfunction. The combined extracts contain saponin, saccharides, proteins and others.

Memory Arrays for Both Good Data Retention and Low Power Operation

Designs and programming schemes can be used to form memory arrays having low power, high density and good data retention. High resistance interconnect lines can be used to partition the memory array can be partitioned into areas of high data retention and areas of low data retention. Variable gate voltages can be used in control transistors to store memory values having different data retention characteristics.

Finding minimum cost transportation routes for orders through a transportation network

A method, system, and computer program product for enterprise software application modules for order consolidation management. The method commences by receiving a set of orders where individual orders have one or more order constraints, then mapping the orders onto one or more transportation legs, where the individual transportation legs have leg constraints. A set of feasible paths through the legs for the orders is generated and ranked based on a total cost through the legs to pick-up an order from a source location and deliver it to a destination location. The method continues by determining a set of shortest paths through a transportation network for the set of orders, wherein the determination of any one of the shortest paths is made subject to honoring respective order constraints while concurrently honoring the leg constraints. The orders are then remapped onto one of the shortest paths.

Method, system, and program for optimizing aggregate processing

Disclosed is a method, system, and program for processing an aggregate function. Rows that contain a reference to intermediate result structures are grouped to form groups. For each group, aggregate element structures are formed from the intermediate result structures and, if the aggregate function specifies ordering, the aggregate element structures are sorted based on a sort key.

LED optical energy detection and feedback system

A system for the throughput detection and feedback of optical energy for making sure of white balance of the LED array in a flat fluorescent light source when the LED array in emitting light by respectively connecting in series a selected LED lamp respectively from RGB LED groups in an LED array to an optical energy sensor to convert optical energy into equivalent amperage, then voltage analog signals to digital signals for a CPU to compare and solve the difference of optical energy to improve voltage output, which then regulated by a driver and fed back to the LED array.

GLASS SUBSTRATE STORAGE AND TRANSPORTATION SYSTEM AND A GLASS SUBSTRATE STORAGE PLATFORM

A glass substrate storage and transportation system is provided, including a storage platform and a transportation platform. The storage platform includes a plurality of storage housings for receiving the upright glass substrates. A glass substrate storage platform is also provided. The glass substrate storage and transportation system and the glass substrate storage platform adopt a vertical storage mode to store the glass substrates for solving the technical problems of the space utilization rate being low and the product having defect resulted by the particle pollution.

Diffusion Barrier Layer for Resistive Random Access Memory Cells

Provided are resistive random access memory (ReRAM) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in ReRAM cells often need to have at least one inert interface such that substantially no materials pass through this interface. The other (reactive) interface may be used to introduce and remove defects from the resistive switching layers causing the switching. While some electrode materials, such as platinum and doped polysilicon, may form inert interfaces, these materials are often difficult to integrate. To expand electrode material options, a diffusion barrier layer is disposed between an electrode and a resistive switching layer and forms the inert interface with the resistive switching layer. In some embodiments, tantalum nitride and titanium nitride may be used for electrodes separated by such diffusion barrier layers.

Object persistency

There is provided a method and computer system for object persistency that includes: running a program; storing an object of the program into a random access memory in response to determining that the object is a non-persistent object; and storing the object into a phase change memory in response to determining that the object is a persistent object. The method and computer system of the present disclosure do not need separate persistency layers, such that the programming model is light weighted, the persistency of object data is more simple and fast, and implicit transaction process is supported, thereby a great deal of development and runtime costs are saved.

Multifunctional electrode

A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

Communication connector and electronic device using communication connector

A connector includes one insulator, conductive contacts fixed through the insulator, and wire bodies that are in respectively one-to-one connection to the conductive contacts. The conductive contacts are arranged in arrays to form several conductive contact arrays, each conductive contact array includes several conductive contact groups, and each conductive contact group includes two differential contacts and one earth contact, where wire bodies connected to each conductive contact array form a wire body array, and wire bodies connected to each conductive contact group form a wire body group. The communication connector further includes several shielding pieces, where the shielding pieces are disposed between two neighboring wire body arrays two neighboring wire body arrays, each shielding piece is not conductively connected to any object, and each shielding piece covers only one wire body group.

Spray Gun for Convenient Liquid Filling

The present invention provides a spray gun for conveniently adding liquid, including a gun body, a material pot, a thimble assembly and a trigger assembly, the gun body is provided with a liquid filling channel, the lower end of the liquid filling channel communicates with the material pot, and the liquid filling channel penetrates upwardly through the gun body, so that the upper end of the liquid filling channel is connected to the outside world, and the upper end of the gun body is provided with a sealing cover assembly for sealing off the liquid filling channel. The solution, the sealing cover assembly is located on the top of the gun body, and the space for operation is large when liquid is added, so as to realize the purpose of conveniently and quickly adding liquid.

Display Stack Topologies for Under-Display Optical Transceivers

In some embodiments, a display stack includes a set of light-emitting elements, and a display backplane that includes a set of conductors and is electrically coupled to the set of light-emitting elements. A conductor in the set of conductors has a length, and a curved edge extending along at least a portion of the length. In some embodiments, a display stack includes a set of light-emitting elements; a set of transistors, electrically coupled to the set of light-emitting elements; and a set of conductors, electrically coupled to the set of transistors. The set of transistors may be electrically coupled to the set of conductors at a set of conductive pads. A plurality of conductive pads in the set of conductive pads is coupled to a single conductor in the set of conductors. The single conductor approaches different conductive pads in the plurality of conductive pads at different angles.

Atomic Layer Deposition of Metal Oxide Materials for Memory Applications

Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional ...

Dynamic selection of optimal grouping sequence at runtime for grouping sets, rollup and cube operations in SQL query processing

A method, apparatus, and article of manufacture for optimizing a query in a computer system. Grouping operations are optimized during execution of the query in the computer system by: (1) translating the grouping operations into a plurality of levels, wherein each of the levels is comprised of one or more grouping sets with the same number of grouping expressions; (2) deriving the grouping sets on a level-by-level basis, wherein the grouping sets in a base level are obtained from the database and the grouping sets in a next one of the levels are derived by selecting as an input a smallest one of the grouping sets in a previous one of the levels with which it has a derivation relationship; and (3) combining the derived grouping sets into an output for the query.

Thermally induced phase switch for laser thermal processing

A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g.

Translation verification and correction

Embodiments of the present disclosure relate to a solution for translation verification and correction. According to the solution, a neural network is trained to determine an association degree among a group of words in a source or target language. The neural network can be used for translation verification and correction. According to the solution, a group of words in a source language and translations of the group of words in a target language are obtained. An association degree among the group of words and an association degree among the translations can be determined by using the trained neural network. Then, whether there is a wrong translation can be determined based on the association degrees. In some embodiments, corresponding methods, systems and computer program products are provided.

Magnetic drive-type device for strengthening inner surface of tapered hole

A magnetic drive-type device for strengthening the inner surface of a tapered hole, said device belonging to the field of spare-parts surface processing. The device is provided with a cylinder (1); a workpiece (2) is vertically disposed at the bottom of the inside of a cylinder (1); the workpiece (20) is provided with a tapered hole (22) the large end of which faces directly upward; a top cover (4) is arranged directly above the workpiece (2); the center of the top cover (4) is provided with a top cover through-hole (19) that is in communication with the tapered hole (22); a piston (5) is arranged in the top cover through-hole; (19) the piston (5) is coaxially and fixedly connected to the lower end of a connecting rod (8); and the upper end of the connecting rod (8) extends upward and out of the top cover (4) and is fixedly connected to a sliding block (9); the sliding block (9) is slidably connected to a vertical guide rail (10); the sliding block (9) is also fixedly connected to one end ...

CURRENT-LIMITING LAYER AND A CURRENT-REDUCING LAYER IN A MEMORY DEVICE

A current-limiting layer and a current-reducing layer are incorporated into a resistive switching memory device to form memory arrays. The incorporated current-limiting layer reduces the occurrence of current spikes during the programming of the resistive switching memory device and the incorporated current-reducing layer minimizes the overall current levels that can flow through the resistive switching memory device. Together, the two incorporated layers help improve device performance and lifetime.

Generalized model for the exploitation of database indexes

A method, apparatus, and article of manufacture for computer-implemented exploitation of database indexes. A statement is executed in a database stored on a data storage device connected to a computer. The database contains data. A model based on pattern matching for a user-defined predicate and selection of an index exploitation rule based on a matched user-defined predicate is provided to be used for exploiting an index to retrieve data from the database.

Nonvolatile memory device having a current limiting element

Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., set and reset steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used ...

X-Ray Diffraction Instrument

There is provided an X-ray diffraction instrument including: a two-dimensional plate-like X-ray detector; an X-ray emitter integrated with the X-ray detector so as to penetrate the plate of the X-ray detector; a cylinder-like shield to define an orientation of the X-ray emitter and to prevent X-ray leakage, the X-ray detector being attached to one open end of the cylinder-like shield; and a standard powder attachment device to attach a standard powder for X-ray diffraction measurement to a surface of an object to be measured. The X-ray diffraction instrument can perform an X-ray diffraction measurement to an object larger than the X-ray detector thereof. The invented X-ray diffraction instrument is small in size, and can perform accurate X-ray diffraction measurement of stationary immovable objects without limitation on an orientation of the measurement surface. In addition, X-ray leakage is prevented for operator safety.

Composition comprising triterpene saponins and compounds with angeloyl functional group, methods for preparing same and uses thereof

This invention provides a composition comprising a triterpenoid saponin, comprising two side groups attached to carbons 21, and 22 of the triterpenoid saponin backbone, for inhibiting skin or ovarian tumor cell growth.

Exception masking in binary translation

Mapping of exception masks between source and target architectures with different numbers of exception masks enables a binary translator to translate code from the source to the target architecture and to determine an appropriate state for the source architecture if an exception is raised when executing the translated code.

Carbon Doped Resistive Switching Layers

Provided are carbon doped resistive switching layers, resistive random access memory (ReRAM) cells including these layers, as well as methods of forming thereof. Carbon doping of metal containing materials creates defects in these materials that allow forming and breaking conductive paths as evidenced by resistive switching. Relative to many conventional dopants, carbon has a lower diffusivity in many suitable base materials. As such, these carbon doped materials exhibit structural stability and consistent resistive switching over many operating cycles. Resistive switching layers may include as much as 30 atomic percent of carbon, making the dopant control relatively simple and flexible. Furthermore, carbon doping has acceptor characteristics resulting in a high resistivity and low switching currents, which are very desirable for ReRAM applications. Carbon doped metal containing layer may be formed from metalorganic precursors at temperatures below saturation ranges of atomic layer deposition ...

DUAL SILICIDE VIA CONTACT STRUCTURE AND PROCESS

A via contact is provided to a diffusion region at a top surface of a substrate which includes a single-crystal semiconductor region. The via contact includes a first layer which consists essentially of a silicide of a first metal in contact with the diffusion region at the top surface. A dielectric region overlies the first layer, the dielectric region having an outer surface and an opening extending from the outer surface to the top surface of the substrate. A second layer lines the opening and contacts the top surface of the substrate in the opening, the second layer including a second metal which lines a sidewall of the opening and a silicide of the second metal which is self-aligned to the top surface of the substrate in the opening. A diffusion barrier layer overlies the second layer within the opening. A third layer including a third metal overlies the diffusion barrier layer and fills the opening.

Embedded Nonvolatile Memory Elements Having Resistive Switching Characteristics

Provided are nonvolatile memory assemblies each including a resistive switching layer and current steering element. The steering element may be a transistor connected in series with the switching layer. Resistance control provided by the steering element allows using switching layers requiring low switching voltages and currents. Memory assemblies including such switching layers are easier to embed into integrated circuit chips having other low voltage components, such as logic and digital signal processing components, than, for example, flash memory requiring much higher switching voltages. In some embodiments, provided nonvolatile memory assemblies operate at switching voltages less than about 3.0V and corresponding currents less than 50 microamperes. A memory element may include a metal rich hafnium oxide disposed between a titanium nitride electrode and doped polysilicon electrode. One electrode may be connected to a drain or source of the transistor, while another electrode is connected ...

Methods and compounds for modulating the secretion or expression of adhesion proteins or angiopoietins of cells

This invention provides methods, processes, compounds and compositions for modulating the gene expression or secretion of adhesion proteins, angiopoietins or their receptors to cure diseases, for anti-angiogenesis and for treating parasites, wherein the adhesion proteins or receptors comprise fibronectin, integrins family, myosin, vitronectin, collagen, laminin, glycosylation cell surface proteins, polyglycans, cadherin, heparin, tenascin, CD 54, CAM, elastin and FAK; wherein the angiopoietins comprise angiopoietin 1, angiopoietin 2, angiopoietin 3, angiopoietin 4, angiopoietin 5, angiopoietin 6, angiopoietin 7, angiopoietin-like 1, angiopoietin-like 2, angiopoietin-like 3, angiopoietin-like 4, angiopoietin-like 5, angiopoietin-like 6, and angiopoietin-like 7; wherein the cancers comprise breast cancer, leukocyte cancer, liver cancer, ovarian cancer, bladder cancer, prostate cancer, skin cancer, bone cancer, brain cancer, leukemia cancer, lung cancer, colon cancer, CNS cancer, melanoma ...

INTERFACIAL OXIDE USED AS SWITCHING LAYER IN A NONVOLATILE RESISTIVE MEMORY ELEMENT

A nonvolatile resistive memory element includes a host oxide formed from an interfacial oxide layer. The interfacial oxide layer is formed on the surface of a deposited electrode layer via in situ or post-deposition surface oxidation treatments. The switching performance of a resistive memory device based on such an interfacial oxide layer is equivalent or superior to the performance of a conventional resistive memory element.

MULTIFUNCTIONAL ELECTRODE

A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

Adaptive control of scr urea injection to compensate errors

A method for controlling a selective catalytic reduction injection system having a storage tank, a pump, a delivery line, and an injection nozzle includes monitoring the selective catalytic reduction injection system, determining a selective catalytic reduction injector system effective area ratio, comparing the selective catalytic reduction injector system effective area ratio to a threshold, calculating a compensation factor upon surpassing the threshold, and modifying the commanded injected mass according to the calculated compensation factor.

Method and apparatus for operating a compression ignition engine

A method for operating an internal combustion engine includes monitoring oxygen concentration in an exhaust gas feedstream, a mass flowrate of intake air, and a commanded fuel pulse of fuel. A blend ratio of biodiesel fuel and petrodiesel fuel of the fuel is determined. Engine operation is controlled in response to the blend ratio of biodiesel fuel and petrodiesel fuel of the fuel.

Plastic injection mold

Disclosed is a plastic injection mold, comprising a female mold, a male mold corresponding to the female, an inclined pushing mechanism, a parting lock and a puller. The female mold comprises an accepting space. The inclined pushing mechanism comprises an inclined pusher and an inclined pushing seat, which a parting lock hole and a guide rail are formed therein. The inclined pusher is installed on the guide rail. The parting lock is fixed on the male mold. The puller is fixed on female mold. As the plastic injection mold is utilized to form a product with barb, a present slide mechanism can be replaced by the inclined pushing mechanism with the parting lock and the puller. The plastic injection mold has a simple structure and can be easily designed and manufactured. Accordingly, the plastic injection mold can be utilized to manufacture the product with barb with small size.

Novel PRO1199 gene disruptions, and methods relating thereto

The present invention relates to transgenic animals, as well as compositions and methods relating to the characterization of gene function. Specifically, the present invention provides transgenic mice comprising disruptions in PRO224, PRO9783, PRO1108, PRO34000, PRO240, PRO943, hu A33, PRO230, PRO178, PRO1199, PRO4333, PRO1336, PRO19598, PRO1083, hu TRPM2 or PRO1801 genes. Such in vivo studies and characterizations may provide valuable identification and discovery of therapeutics and/or treatments useful in the prevention, amelioration or correction of diseases or dysfunctions associated with gene disruptions such as neurological disorders; cardiovascular, endothelial or angiogenic disorders; eye abnormalities; immunological disorders; oncological disorders; bone metabolic abnormalities or disorders; lipid metabolic disorders; or developmental abnormalities.

Injection fuel and load balancing control system

A method for correcting main fuel injection quantities in an internal combustion engine in a plurality of cylinders of the engine includes monitoring a desired fuel injection quantity for the plurality of cylinders, monitoring an in-cylinder pressure for each of the cylinders, determining a burnt fuel mass resulting from a main fuel injection for each of the cylinders based upon the in-cylinder pressures, determining a fuel injection quantity correction for each of the cylinders based upon the burnt fuel masses, and controlling fuel injections into the plurality of cylinders based upon the desired fuel injection quantity and the fuel injection quantity correction for each of the cylinders.

Polysilicon layer and method of forming the same

The method of forming a polysilicon layer is provided. A first polysilicon layer with a first grain size is formed on a substrate. A second polysilicon layer with a second grain size is formed on the first polysilicon layer. The first grain size is smaller than the second grain size. The first polysilicon layer with a smaller grain size can serve as a base for the following deposition, so that the second polysilicon layer formed thereon has a flatter topography, and thus, the surface roughness is reduced and the Rs uniformity within a wafer is improved.

Injection mold

An injection mold for molding an electronic product which has a terminal includes a movable mold, a first sliding block levelly defining a through-hole, a second sliding block, a supporting pole and a stationary mold. A top of the movable mold defines an opening of which a bottom defines a fastening hole for fastening a bottom of the terminal therein. An inner sidewall of the second sliding block defines a groove for restraining a top of the terminal. The first and second sliding blocks are located at two opposite sides of the opening to together define a cavity for molding the electronic product. The supporting pole is movably inserted in the through-hole and stretches into the cavity to resist against the top of the terminal. The stationary mold is positioned on the first and second sliding blocks, and defines a sprue channel connected with the cavity.

Logging system using persistent memory

A computer program product, including: a computer readable storage device to store a computer readable program, wherein the computer readable program, when executed by a processor within a computer, causes the computer to perform operations for logging. The operations include: receiving a transaction including data and a log record corresponding to the data; writing the data to a data storage device; and writing the log record to a log space on a persistent memory device coupled to the data storage device.

Urea injector diagnostics using spectral analysis for scr nox reduction system

A method to indicate an injector fault in a urea dosing module in an aftertreatment system includes monitoring a control command for the urea dosing module, determining a carry frequency for the control command, monitoring a delivery line pressure for the delivery line, evaluating the delivery line pressure at the carry frequency, and indicating the injector fault based upon the evaluating.

Robust estimation of biodiesel blend ratio for alternative fuel combustion

A method to control an internal combustion engine includes operating the engine with a fuel blend of a first fuel and a second fuel, monitoring a value of a first combustion parameter during engine operation, monitoring a first value for a second combustion parameter during engine operation, determining a second value for the second combustion parameter in accordance with a predetermined correspondence among the first combustion parameter, the second combustion parameter, and a predetermined fuel blend of the first fuel and the second fuel, determining the fuel blend based upon a difference between the first and second values for the second combustion parameter, and controlling the engine based upon the fuel blend.

System and method to estimate intake charge temperature for internal combustion engines

An engine includes an intake manifold mixing an intake air flow and an exhaust gas recirculation flow to provide an intake charge flow. A method to estimate an intake charge temperature of the intake charge includes monitoring system conditions for the engine, determining an effect of the mixing upon a specific heat coefficient of the intake charge flow based upon the monitored system conditions, estimating the intake charge temperature based upon the effect of the mixing upon the specific heat coefficient of the intake charge flow and the monitored system conditions, and controlling the engine based upon the estimated intake charge temperature.

Interface layer improvements for nonvolatile memory applications

A resistive switching nonvolatile memory device having an interface layer disposed between a doped silicon electrode and a variable resistance layer fabricated in the nonvolatile memory device and methods of fabricating the same. In one embodiment, the interface layer is a high-k layer having a lower electrical EOT than native silicon oxide to act as a diffusion barrier between the variable resistance layer and the silicon electrode. Alternatively, the high-k interface layer may be formed by performing a nitrogen treatment on a fabricated silicon oxide layer. In another embodiment, the interface layer may be fabricated by performing a nitrogen or ozone treatment on the native oxide layer. In another embodiment, the interface layer is a fabricated silicon oxide layer resulting in an improved diffusion barrier between the variable resistance layer and the silicon electrode. In all embodiments, the interface layer also passivates the surface of the silicon electrode.

Evaluation System and Evaluation Method of Plastic Strain

An evaluation system for plastic strain includes an X-ray diffraction device for irradiating the surface of a measurement object; and an image analyzing device that generates diffraction intensity curves from X-ray diffraction angle and intensity with an implanted database, which can be obtained in advance from test specimens made of the same material of the measurement object, establishing at least one of the relations between the full width at half maximum of the diffraction intensity curve and plastic strain, and between the integral intensity angular breadth of diffraction intensity curve and plastic strain. The image analyzing device obtains plastic strain of the measurement object based on at least one of the diffraction parameters of the full width at half maximum and the integral intensity angular breadth of a diffraction intensity curve corresponding to the implanted database indicative of the relation between the diffraction parameter and plastic strain.

Electronic device and fastening structure for circuit board

A fastening structure for fastening a circuit board, includes a loading member, a holding member, and a fixing member. The loading member is positioned inside of an electronic device. The holding member protrudes from the loading member. The fixing member protrudes from the loading member. When the circuit board is fastened, the holding member presses on the circuit board, and the fixing member passes through a fixing hole define in the circuit board, so as to restrict the circuit board to move in a first plane parallel to the circuit board, and a second plane perpendicular to the circuit board.

Spatial three-dimensional inline handling system

A spatial three-dimensional (3D) inline handling system comprises: a ceiling with guide rails; a plurality of cassettes disposed at a bottom surface of the ceiling to temporarily store substrates; a plurality of processing units disposed below the cassettes to process the substrates; and an overhead handling apparatus for handling the substrates between the cassettes and the processing units and slidably connected with the guide rails. In the present disclosure, the ground space occupied by the handling system is reduced by adopting a 3D handling manner and disposing robot arms at overhead positions, and the space utilization factor is greatly increased by disposing the processing units of the substrate processing line concentratively. Meanwhile, the robot arms handles the substrates overhead to improve the handling efficiency; furthermore, because the overhead handling apparatus is located near the FFUs, cleanliness of the substrates is increased and, consequently, the product yield is increased.

Nonvolatile Memory Device Having An Electrode Interface Coupling Region

Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. In one configuration of the resistive switching nonvolatile memory device, the interface layer structure comprises a passivation region, an interface coupling region, and/or a variable resistance layer interface region that are configured to adjust the nonvolatile memory device's performance, such as lowering the formed device's switching currents and reducing the device's forming voltage, and reducing the performance variation from one formed device to another.

Methods for Producing a Fermentation Product from Lignocellulose-Containing Material

The present invention provides a method for producing a fermentation product from lignocellulose-containing material, a method for converting lignocellulose-containing material into a hydrolyzate comprising mono- and oligo-saccharides, and a method for treating lignocellulose-containing material, all of which comprise the step of mixing an acid pre-treated lignocellulose-containing material and an alkaline pre-treated lignocellulose-containing material. The present invention further provides a fermentation product made according to the method for producing a fermentation product.

Nonvolatile Memory Device Using a Tunnel Nitride As A Current Limiter Element

Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Multifunctional Electrode

A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

Methods and compounds for modulating the secretion or expression of adhesion proteins or angiopoietins of cells

This invention provides methods, processes, compounds and compositions for modulating the gene expression or secretion of adhesion proteins, angiopoietins or their receptors to cure diseases, for anti-angiogenesis and for treating parasites, wherein the adhesion proteins or receptors comprise fibronectin, integrins family, myosin, vitronectin, collagen, laminin, glycosylation cell surface proteins, polyglycans, cadherin, heparin, tenascin, CD 54, CAM, elastin and FAK; wherein the angiopoietins comprise angiopoietin 1, angiopoietin 2, angiopoietin 3, angiopoietin 4, angiopoietin 5, angiopoietin 6, angiopoietin 7, angiopoietin-like 1, angiopoietin-like 2, angiopoietin-like 3, angiopoietin-like 4, angiopoietin-like 5, angiopoietin-like 6, and angiopoietin-like 7; wherein the cancers comprise breast cancer, leukocyte cancer, liver cancer, ovarian cancer, bladder cancer, prostate cancer, skin cancer, bone cancer, brain cancer, leukemia cancer, lung cancer, colon cancer, CNS cancer, melanoma cancer, renal cancer, cervical cancer, esophageal cancer, testicular cancer, spleenic cancer, kidney cancer, lymphatic cancer, pancreas cancer, stomach cancer and thyroid cancer.

Combination respiratory therapy and mattress functionality system integrated into a patient bed

A patient support apparatus includes a frame and a mattress positioned on the frame. A respiratory therapy device is coupled to the frame. The respiratory therapy device includes a blower having an inlet and an outlet, a patient interface, and a valve including a valve member that is rotatable through a first angular displacement in a first direction from a first position to a second position. The outlet of the blower is coupled to the patient interface so that positive pressure is provided to a patient's airway via the patient interface when the valve member is in the first position. The inlet of the blower is coupled to the patient interface so that negative pressure is provided to the patient's airway via the patient interface when the valve member is in the second position.

Shaping reram conductive filaments by controlling grain-boundary density

Filament size and shape in a ReRAM stack can be controlled by doping layers of a variable-resistance stack to change the crystallization temperature. This changes the density of the grain boundaries that form during annealing and provide minimal-resistance paths for the migration of charged defects. Hf, Zr, or Ti decreases the crystallization temperature and narrows the filament, while Si or N increases the crystallization temperature and widens the filament. Tapered filaments are of interest: The narrow tip requires little energy to break and re-form, enabling the cell to operate at low power, yet the wider body and base are insensitive to entropic behavior of small numbers of defects, enabling the cell to retain data for long periods.

Inverter and over current protection method thereof

An inverter and an over current protection method thereof are provided. The inverter includes an inverting circuit, a filtering capacitor and an over current protection circuit. The inverting circuit is configured to convert a DC input voltage into an AC output voltage and provide the AC output voltage to a load. The filtering capacitor is coupled to the inverting circuit and the load in parallel. The over current protection circuit is coupled to the inverting circuit and the filtering capacitor and configured to provide an over current protection mechanism. The over current protection circuit detects an AC current on the filtering capacitor and determines whether to enable the over current protection mechanism according to the AC current in order to restrain the power conversion operation of the inverting circuit.

Pixel structure and display panel

A display panel includes a first substrate, a plurality of first signal lines, a plurality of second signal lines, and a plurality of pixel electrodes. The first substrate has at least one bendable area and two non-bendable areas. The at least one bendable area is located between the two non-bendable areas. One of the first signal lines and one of the second signal lines are electrically connected to at least one subpixel. Each of the a subpixels includes a control unit, and the control units are provided only in the non-bendable areas and are not provided in the bendable area. The pixel electrodes are provided in the bendable area and the non-bendable areas. Each of the controls units is electrically connected to one of the pixel electrodes.

Torque And Current Control Methods For Switching Variable Electric Drive Vehicles

A current command module is configured to, based on a direct current (DC) bus voltage for an electric motor of the vehicle, generate a d-axis current command for the electric motor and a q-axis current command for the electric motor. A voltage command module configured to generate voltage commands based on the d-axis current command and the q-axis current command. A battery switching control module is configured to: determine a voltage operating state of a battery based on the voltage commands; compare a battery parameter to at least one of a predetermined voltage parameter and a predetermined current parameter during a dwell time when a plurality of switches of the battery are open; and generate a switch control signal to transition at least one switch of the plurality of switches to cause the battery to operate in the voltage operating state based on the comparison.

Method to teach and learn Chinese

The present invention provides a method to teach and learn Chinese Pin Yin. Specifically, the method is directed to learn all Finals in Chinese Pin Yin. The method starts from the fundamental 6 Single Finals (vowels) and is gradually built up to other 29 compound Finals in a very logical manner. The method described in the present invention links the six single Finals with Compound Finals, so that all the Finals can be are mapped very logically in mind. In experimental teaching, this method has shown superior than other methods as it significantly reduces time and effort for beginners.

Method and Apparatus for Controlling a Two-Stage Air Charging System with Mixed EGR

A two-stage air charging system for an internal combustion engine with mixed exhaust gas recirculation includes a high pressure exhaust gas recirculation loop, a low pressure exhaust gas recirculation loop, an air throttle system, a turbo air charging system, and an electric air charging system. A method to control the system includes monitoring desired operating target commands and operating parameters. Feedback control signals are determined based upon the monitored desired operating target commands and the monitored operating parameters. The two-stage air charging system is controlled based on system control commands for each of the high pressure exhaust gas recirculation loop, the low pressure exhaust gas recirculation loop, the air throttle system, the turbo air charging system and the electric air charging system.

Nonvolatile Memory Device Having An Electrode Interface Coupling Region

Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. In one configuration of the resistive switching nonvolatile memory device, the interface layer structure comprises a passivation region, an interface coupling region, and/or a variable resistance layer interface region that are configured to adjust the nonvolatile memory device's performance, such as lowering the formed device's switching currents and reducing the device's forming voltage, and reducing the performance variation from one formed device to another.

Parachute system, safety protection method and device of unmanned aerial vehicle

A parachute system and a safety protection method of an unmanned aerial vehicle (UAV), and relates to the technical field of intelligent storage. The parachute system of the UAV includes: a sensor configured to detect the flight state of the UAV, a parachute; and a controller electrically connected with the sensor and the parachute, respectively, and configured to obtain the flight state of the UAV from the sensor, and control the parachute to open when the UAV is in an unstable state.

Self-balancing switching control of dual-pack rechargable energy storage system with series and parallel modes

An electrical system includes a rechargeable energy storage system (RESS) and a controller. The RESS includes first and second battery packs connected to a voltage bus, each pack having a respective plurality of battery cells and a corresponding cell balancing circuit. The RESS further includes switches that selectively connect or disconnect the packs to or from each other to achieve series and parallel modes. The controller executes a method by detecting a requested series to parallel mode transition. Responsive to a threshold imbalance being present in a state of charge or pack voltage of the packs relative to each other, the controller balances the state of charge/voltage using open/closed state control of the cell balancing circuits, and possibly a switching block having PWM-controlled switches and a circuit element. The controller may execute the requested mode transition upon balancing.

Electric-drive motor vehicles, systems, and control logic for predictive charge planning and powertrain control

Presented are intelligent vehicle systems and control logic for predictive charge planning and powertrain control of electric-drive vehicles, methods for manufacturing/operating such systems, and electric-drive vehicles with smart charge planning and powertrain control capabilities. Systems and methods of AI-based predictive charge planning for smart electric vehicles use machine-learning (ML) driver models that draws on available traffic, location, and roadway map information to estimate vehicle speed and propulsion torque requirements to derive a total energy consumption for a given trip. Systems and methods of AI-based predictive powertrain control for smart hybrid vehicles use ML driver models with deep learning techniques to derive a drive cycle profile defined by a preview route with available traffic, geopositional, geospatial, and map data. ML-generated driver models are developed with collected data to replicate driver behavior and predict the drive cycle profile, including predicted vehicle speed, propulsion torque, and accelerator/brake pedal positions for a preview route.

Bilayered Oxide Structures for ReRAM Cells

Provided are resistive random access memory (ReRAM) cells having bi-layered metal oxide structures. The layers of a bi-layered structure may have different compositions and thicknesses. Specifically, one layer may be thinner than the other layer, sometimes as much as 5 to 20 times thinner. The thinner layer may be less than 30 Angstroms thick or even less than 10 Angstroms thick. The thinner layer is generally more oxygen rich than the thicker layer. Oxygen deficiency of the thinner layer may be less than 5 atomic percent or even less than 2 atomic percent. In some embodiments, a highest oxidation state metal oxide may be used to form a thinner layer. The thinner layer typically directly interfaces with one of the electrodes, such as an electrode made from doped polysilicon. Combining these specifically configured layers into the bi-layered structure allows improving forming and operating characteristics of ReRAM cells.

Contact Structure of Gate Structure

A method of forming a contact structure of a gate structure is provided. In the method, an oxidation layer and a first sidewall layer disposed between a first metal gate and a second metal gate are etched to expose an underlying silicon substrate. A silicide portion defined by a contact profile is deposited in the exposed portion of the silicon substrate. A second sidewall layer substantially covers the first sidewall layer and at least partially covering the silicide portion is formed after depositing the silicide portion. A metal glue layer is deposited around the first metal gate and the second metal gate defining a trench above the silicide portion. A metal plug is deposited within the trench.

Isolation Features and Methods of Fabricating the Same

Semiconductor devices and methods of fabricating semiconductor devices are provided. The present disclosure provides a semiconductor device that includes a first fin structure and a second fin structure each extending from a substrate; a first gate segment over the first fin structure and a second gate segment over the second fin structure; a first isolation feature separating the first and second gate segments; a first source/drain (S/D) feature over the first fin structure and adjacent to the first gate segment; a second S/D feature over the second fin structure and adjacent to the second gate segment; and a second isolation feature also disposed in the trench. The first and second S/D features are separated by the second isolation feature, and a composition of the second isolation feature is different from a composition of the first isolation feature.

Method for fabricating self-aligned contact in a semiconductor device

A semiconductor device includes a gate structure disposed over a substrate, and sidewall spacers disposed on both side walls of the gate structure. The sidewall spacers includes at least four spacer layers including first to fourth spacer layers stacked in this order from the gate structure.

Dynamic feed-forward opamp-based circuit

A dynamic feed-forward OPAMP-based circuit is provided. A first amplifying stage amplifies a pair of input differential signals to provide a pair of intermediate differential signals. A second amplifying stage amplifies the pair of intermediate differential signals to provide a pair of output differential signals. A first capacitor is coupled to a non-inverting input terminal of the first amplifying stage. A second capacitor is coupled to an inverting input terminal of the first amplifying stage. A feed-forward transconductance stage is coupled between the first and second capacitors and the second amplifying stage. The first and second capacitors and the feed-forward stage form a high-frequency path with a first gain curve, and the first amplifying stage and the second amplifying stage form a high-gain path with a second gain curve. The operational amplifier provides an open-loop gain according to the first and second gain curves.

Supported nickel catalysts used as direct internal reforming catalyst in molten carbonate fuel cells

Disclosed here is a supported catalyst comprising a thermally stable core, wherein the thermally stable core comprises a metal oxide support and nickel disposed in the metal oxide support, wherein the metal oxide support comprises at least one base metal oxide and at least one transition metal oxide or rare earth metal oxide mixed with or dispersed in the base metal oxide. Optionally the supported catalyst can further comprise an electrolyte removing layer coating the thermally stable core and/or an electrolyte repelling layer coating the electrolyte removing layer, wherein the electrolyte removing layer comprises at least one metal oxide, and wherein the electrolyte repelling layer comprises at least one of graphite, metal carbide and metal nitride. Also disclosed is a molten carbonate fuel cell comprising the supported catalyst as a direct internal reforming catalyst.

Liquid crystal sealant forming device and display panel assembly apparatus using the same

The present invention provides a liquid crystal sealant forming device and a display panel assembly apparatus using the same. The display panel assembly apparatus comprises the liquid crystal sealant forming device, an alignment assembly device, a transporting device and a curing device. The liquid crystal sealant forming device comprises a forming substrate; a plurality of liquid crystal dispensing openings formed on one side of the forming substrate for dispensing a liquid crystal on a substrate; and at least one sealant coating opening disposed around the liquid crystal dispensing openings for coating a sealant on the substrate. The present invention can form the liquid crystal and the sealant in the same apparatus.

Turbocharger flow control

A method for controlling a turbocharger is provided. The turbocharger has a turbine operatively connected to an exhaust of an internal combustion engine, and a compressor operatively connected to an intake of the engine. The method includes determining a boost pressure command for the compressor. The boost pressure command is configured to provide sufficient combustion reactant for the engine. The method includes calculating a compressor power from the determined boost pressure command, and calculating a turbine flow from the calculated compressor power. The method commands the turbocharger to operate at the calculated turbine flow.

Integrated Circuits Having Protruding Interconnect Conductors

Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes an inter-level dielectric layer. A first contact that includes a fill material is formed that extends through the inter-level dielectric layer. The inter-level dielectric layer is recessed such that the fill material extends above a top surface of the inter-level dielectric layer. An etch-stop layer is formed on the inter-level dielectric layer such that the fill material of the first contact extends into the etch-stop layer. A second contact is formed extending through the etch-stop layer to couple to the first contact. In some such examples, the second contact physically contacts a top surface and a side surface of the first contact.

Semiconductor structure with conductive structure and method for manufacturing the same

Semiconductor structures and methods for manufacturing the same are provided. The method for manufacturing the semiconductor structure includes forming a gate structure over a substrate and forming a mask layer covering the gate structure. The method also includes forming a source/drain structure adjacent to the gate structure over the substrate and forming a contact over the source/drain structure. The method also includes forming a dielectric layer over the contact and the mask layer and forming a first trench through the dielectric layer and the mask layer over the gate structure. The method also includes forming a first conductive structure in the first trench and removing an upper portion of the first conductive structure. The method also includes forming a second conductive structure through the dielectric layer and covering the contact and the first conductive structure.

Energy balance based boost control using feedback linearization

An internal combustion engine includes an air charging system with a boost air system. A method to control the boost air in the air charging system, decoupled from the air and EGR system controls, includes monitoring a reference boost pressure and operating parameters of the air charging system; creating a turbocharger energy balance model of the air charging system; applying feedback linearization control to the turbocharger energy balance model to create an approximately linearized feedback system; and determining a boost control command for the air charging system using the approximately linearized feedback system based on the monitored reference boost pressure and the monitored operating parameters of the air charging system. The boost air in the air charging system is controlled based upon the boost control command.

Non-preemption of a group of interchangeable tasks in a computing device

A method for non-preemption of interchangeable tasks is disclosed. The method for non-preemption of interchangeable tasks includes identifying a first task assigned to a first time slice, identifying a second task assigned to a subsequent time slice, comparing the first task to the second task, identifying whether the first task and the second task are interchangeable tasks, and executing the first task during the subsequent time slice in response to the first task and the second task being interchangeable. The first task may be currently executing on a processor or may be scheduled to execute on the processor.

Isolation Features and Methods of Fabricating the Same

Semiconductor devices and methods of fabricating semiconductor devices are provided. The present disclosure provides a semiconductor device that includes a first fin structure and a second fin structure each extending from a substrate; a first gate segment over the first fin structure and a second gate segment over the second fin structure; first isolation feature separating the first and second gate segments; a first source/drain (S/D) feature over the first fin structure and adjacent to the first gate segment; a second S/D feature over the second fin structure and adjacent to the second gate segment; and a second isolation feature also disposed in the trench. The first and second S/D features are separated by the second isolation feature, and a composition of the second isolation feature is different from a composition of the first isolation feature.

Estimating nitrogen oxide values for vehicles

Methods, systems, and vehicles are provided for estimating nitrogen oxide values for vehicles. In accordance with one embodiment, a system includes a memory and a processor. The memory is configured to store one or more kinetic models pertaining to a propulsion system for a vehicle. The processor is configured to at least facilitate obtaining a nitrogen value pertaining to a selective catalytic reduction (SCR) unit of the propulsion system, obtaining an initial nitrogen oxide measurement via a nitrogen oxide sensor of the propulsion system, using the nitrogen value as an input for the one or more kinetic models pertaining to the propulsion system, generating a kinetic model output from the one or more kinetic models, and estimating an updated value for the initial nitrogen oxide measurement based on the kinetic model output.

Manganese oxide containing materials for use in oxidative desulfurization in fuel cell systems

A desulfurizer material for desulfurizing fuel supplied to a fuel cell system, the desulfurizer material comprising one or more manganese oxide materials having an octahedral molecular sieve (OMS) structure, and the desulfurizer material being resistant to moisture and being capable of removing organic sulfur containing compounds and H 2 S. The desulfurizer material is used in a desulfurizer assembly which is used as part of a fuel cell system.

Method and system for product knowledge fusion

A method and system for product knowledge fusion are discloses. The method includes following steps: acquiring original data of a product; performing knowledge extraction on the original data of the product to obtain entities, attributes and semantic relationships related to the product; building an entity information knowledge base according to the entities, attributes and semantic relationships related to the products; fusing the semantic relationships and attributes with the entities and matching the entities by adopting a text matching model to obtain original data of the product corresponding to matched entity information; and establishing a knowledge graph of the product according to the matched entity information. The method and system standardize multi-source heterogeneous data with a knowledge fusion method, thus effectively reducing polysemy and unclear references of knowledge caused by different data structures and sources.

Photoresist Defect Reduction System and Method

A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process.

Confined Defect Profiling within Resistive Random Memory Access Cells

Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide.

Voltage Controlling Assemblies Including Variable Resistance Devices

Provided are voltage controlling assemblies that may be operable as clocks and/or oscillators. A voltage controlling assembly may include a comparator and a variable resistance device connected to one differential signal node of the comparator. The other node may be connected to a capacitor. Alternatively, no capacitors may be used in the assembly. During operation of the voltage controlling assembly, the variable resistance device changes its resistance between two different resistive states. The change from a low to a high resistive state may be associated with a voltage spike at the differential signal node of the comparator and trigger a response from the comparator. This resistance change may have a delay determining an operating frequency of the voltage controlling assembly. Specifically, the variable resistance device in the low resistive state may be kept for a period of time at a certain voltage before it switches into the high resistive state.

Combination respiratory therapy and mattress functionality system integrated into a patient bed

A patient support apparatus includes a bed including a frame. A mattress is supported by the frame. A respiratory therapy apparatus is supported by the frame. A pneumatic system is operable to inflate at least one bladder of the mattress and operable to deliver air to the respiratory therapy apparatus.

Semiconductor device and formation thereof

A semiconductor device and method of formation are provided herein. A semiconductor device includes a first active region adjacent a first side of a shallow trench isolation (STI) region. The first active region including a first proximal fin having a first proximal fin height adjacent the STI region, and a first distal fin having a first distal fin height adjacent the first proximal fin, the first proximal fin height less than the first distal fin height. The STI region includes oxide, the oxide having an oxide volume, where the oxide volume is inversely proportional to the first proximal fin height. A method of formation includes forming a first proximal fin with a first proximal fin height less than a first distal fin height of a first distal fin, such that the first proximal fin is situated between the first distal fin and an STI region.

Giantvm for resource aggregation

Described herein is a method for resource aggregation (many-to-one virtualization), comprising: virtualizing CPU by QEMU in a distributed way; organizing a plurality of memories scattered over different machines as pages to providing consistent memory view for guest OS; and performing time synchronization between different machines.

Thermal Devices For Controlling Heat Transfer

In one embodiment, a thermal device includes a sealed housing that defines an interior space, a liquid-attracting element provided on one side of the interior space, a liquid-repelling element provided on another side of the interior space opposite to the liquid-attracting element, and a liquid provided within the interior space.

Resistive Random Access Memory Cells Having METAL ALLOY Current Limiting layers

Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from alloys of transition metals. Some examples of such alloys include chromium containing alloys that may also include nickel, aluminum, and/or silicon. Other examples include tantalum and/or titanium containing alloys that may also include a combination of silicon and carbon or a combination of aluminum and nitrogen. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature processing. In some embodiments, the breakdown voltage of a current limiting layer is at least about 8V. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layers while maintaining their performance.

Methods of forming low resistance contacts

Methods for forming electrical contacts are provided. First and second FETs are formed over a semiconductor substrate. Openings are etched in a dielectric layer formed over the substrate, where the openings extend to source and drain regions of the FETs. A hard mask is formed over the source and drain regions of FETs. A first portion of the hard mask is removed, where the first portion is formed over the source and drain regions of the first FET. First silicide layers are formed over the source and drain regions of the first FET. A second portion of the hard mask is removed, where the second portion is formed over the source and drain regions of the second FET. Second silicide layers are formed over the source and drain regions of the second FET. A metal layer is deposited within the openings to fill the openings.

Coordinated torque and speed control systems and logic for hybrid electric vehicles

Presented are model-based control systems for operating parallel hybrid powertrains, methods for making/using such systems, and motor vehicles with parallel hybrid powertrains and model-based torque and speed control capabilities. A method for controlling operation of a hybrid powertrain includes receiving a command signal for a hybrid powertrain operation associated with a driver input and a current operating mode of the powertrain. A desired output torque for executing the powertrain operation is then determined. The method determines if a speed differential between an engine speed of an engine and a torque converter output speed of a torque converter is less than a calibrated threshold; if so, the method responsively engages a clutch device to operatively connect the engine's output member to the transmission's input member. Engine torque is then coordinated with motor torque such that the sum of the engine and motor torques is approximately equal to the desired output torque.

Antibodies against il-7r alpha subunit and uses thereof

Provided herein are antibodies that bind to the alpha subunit of an IL-7 receptor (IL-7Rα). Also provided are uses of these antibodies in therapeutic applications, such as treatment of inflammatory diseases. Further provided are cells that produce the antibodies, polynucleotides encoding the heavy and/or light chain regions of the antibodies, and vectors comprising the polynucleotides.

Foot spa

A foot spa includes a body and an electrolysis device. The body has a receiving space for containing water. The electrolysis device is mounted on a bottom of the body and includes a case, a control module and two electrolyte plates. The control module is mounted inside the body. The two electrolyte plates are mounted on a top portion of the case and are electrically connected to the control module. When the foot spa is operated, salt water is added to the receiving space for the two electrolyte plates to be soaked into the salt water in generation of an electrolytic reaction, such that sodium hydroxide and hypochlorous acid can be generated from the salt water to sterilize and deodorize the feet of users and provide the hygienic advantage.

Dynamic current correlating circuit and its applied comparator and analog-to-digital converter

A dynamic current correlating circuit is disclosed. The current correlating circuit includes a reset circuit, a first current generating circuit and a second current generating circuit. The reset circuit executes a discharging procedure during a first time interval and executes a charging procedure during a second time interval. The first current generating circuit is electrically connected to the reset circuit. The first current generating circuit generates a first sub-current and a second sub-current during a third time interval according to a first input voltage and a second input voltage and generates a first current after the third time interval. The second current generating circuit is electrically connected to the reset circuit. The second current generating circuit generates a second current according to the first input voltage and the second input voltage after the third time interval.

Nonvolatile Resistive Memory Element With A Metal Nitride Containing Switching Layer

A nonvolatile resistive memory element has a novel variable resistance layer that includes a metal nitride, a metal oxide-nitride, a two-metal oxide-nitride, or a multilayer stack thereof. One method of forming the novel variable resistance layer comprises an interlayer deposition procedure, in which metal oxide layers are interspersed with metal nitride layers and then converted into a substantially homogeneous layer by an anneal process. Another method of forming the novel variable resistance layer comprises an intralayer deposition procedure, in which various ALD processes are sequentially interleaved to form a metal oxide-nitride layer. Alternatively, a metal oxide is deposited, nitridized, and annealed to form the variable resistance layer or a metal nitride is deposited, oxidized, and annealed to form the variable resistance layer.

Method of forming trenches with different depths

A method of fabricating a semiconductor device includes forming a first dielectric layer over a substrate that includes a gate structure, forming a first trench in the first dielectric layer, forming dielectric spacers along sidewalls of the first trench, removing a portion of the dielectric spacers to expose a portion of the sidewalls, forming a first metal feature in the first trench over the another portion of the dielectric spacers and along the exposed portions of the sidewalls of the first trench, forming a second dielectric layer over the first metal feature and the gate structure and forming a second trench through the second dielectric layer to expose a portion of the first metal feature and a third trench through the second dielectric layer and the first dielectric layer to expose a portion of the gate structure in the same etching process.

Method to estimate compressor inlet pressure for a turbocharger

A method of estimating a compressor inlet pressure for a turbocharger includes: measuring an ambient temperature of air flowing into the compressor; measuring a flow rate of the air into the compressor; measuring a boost pressure of the air from the compressor to an engine; determining a speed of a turbine of the turbocharger; defining a pressure ratio as the ratio of the boost pressure to the compressor inlet pressure; defining a function as the function of the compressor flow rate, the ambient temperature, the compressor inlet pressure and the turbine speed; and equating the pressure ratio and the function and recursively solving for the compressor inlet pressure.

METHODS OF USE FOR LOW-BIND POLYPROPYLENE PLATES AND VIALS

The present disclosure relates to a method of analyzing a sample comprising a hydrophobic molecule. The method includes preparing an aqueous solution comprising the sample. The method also includes placing the solution in contact with a polypropylene substrate having a deactivated surface that reduces adsorption of the hydrophobic molecule relative to a polypropylene substrate that has not been deactivated. The method also includes analyzing the sample. 1. A method of analyzing a protein comprising:preparing an aqueous solution comprising the protein, wherein a concentration of the protein is less than about 1 μM;storing the solution in a polypropylene plate or vial having a deactivated surface, analyzing the stored solution using a mass spectrometer, wherein the recovery of the protein is greater than about 90%.2. The method of claim 1 , wherein the concentration of the protein is less than about 5 nM.3. The method of claim 1 , further comprising separating the aqueous solution using liquid chromatography.4. The method of claim 1 , wherein the solution is stored at a temperature less than about room temperature.5. The method of claim 1 , wherein the solution is stored in the polypropylene plate or vial having a deactivated surface for about 24 hours.6. The method of claim 1 , wherein the solution is stored in the polypropylene plate or vial having a deactivated surface for about 48 hours.7. The method of claim 1 , wherein the solution is stored in the polypropylene plate or vial having a deactivated surface for about 72 hours.8. A method of analyzing a peptide comprising:preparing an aqueous solution comprising the peptide, wherein a concentration of the peptide is less than about 1 μM;storing the solution in a polypropylene plate or vial having a deactivated surface,analyzing the stored solution using a mass spectrometer, wherein the recovery of the peptide is greater than about 90%.9. The method of claim 8 , wherein the concentration of the peptide is less than ...

Flexible panel and method for manufacturing the same

A flexible panel includes a substrate, a first insulating layer, a second insulating layer, a sacrificial layer, and a metal wiring layer. The substrate has an active area, a peripheral area, and an intermediate area. The first insulating layer is in the three areas of the substrate, and the first insulating layer in the intermediate area has a first pattern. The second insulating layer is on the first insulating layer. The second insulating layer in the intermediate area has a first opening extending along a first direction, so that the second insulating layer does not cover the first pattern of the first insulating layer. The sacrificial layer is between the first insulating layer and the second insulating layer in the intermediate area, and does not cover the first pattern of the first insulating layer. The metal wiring layer extends between the active area and the peripheral area.

Vehicle exhaust aftertreatment systems and methods

A vehicle propulsion system includes an internal combustion engine configured to output a primary output torque and at least one fuel injector arranged to supply fuel to a combustion chamber of the engine. The propulsion system also includes at least one exhaust aftertreatment device to capture combustion byproducts within an exhaust flow. The propulsion system also includes an electric machine coupled to the engine to exchange torque. A controller is programmed to supply a baseline fuel injection corresponding to a first engine output to satisfy a driver torque demand and to periodically supplement the baseline target fuel injection quantity to increase engine output torque to overshoot the first engine output thereby increasing combustion byproducts to regenerate the at least one exhaust aftertreatment device. The controller is also programmed to apply a resistive torque from the electric machine such that an overall propulsion system torque remains at the driver torque demand.

Semiconductor arrangement and formation thereof

A semiconductor arrangement and method of formation are provided herein. A semiconductor arrangement includes a metal connect in contact with a first active region and a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes recessing the metal connect over the STI region to form a recessed portion of the metal connect. Forming the recessed portion of the metal connect in contact with the first active region and the second active region mitigates RC coupling, such that a first gate is formed closer to a second gate, thus reducing a size of a chip on which the recessed portion is located.

Light-Emitting Diode Display With Reduced Leakage

An organic light-emitting diode display may contain an array of display pixels. Each display pixel may have a respective organic light-emitting diode that is controlled by a drive transistor. At low temperatures, it may be necessary to increase the amount of current through an organic light-emitting diode to achieve a desired luminance level. In order to increase the current through the light-emitting diode, the ground voltage level may be lowered. However, this may lead to thin-film transistors within the pixel leaking, which may result in undesirable display artifacts such as bright dots being displayed in a dark image. In order to prevent leakage in the transistors, the transistors may be coupled to separate reference voltage supplies or separate control lines. Additionally, the transistors may be positioned to minimize leakage even at low ground voltage levels.

Anti-reflective layer and method

A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom.

Multi-functional massage device

A multi-functional massage device has an accommodating body, an actuating element located above the accommodating body, and a casing. A vibration motor is arranged in the accommodating body. A conductive column electrically connected to one electrode of the vibration motor is formed on a top of the accommodating body. The actuating element has a collar, a cap, a ring, and a conductive spring. One open end of the collar receives the cap. A ring is formed at a lower portion of the actuating element. A conductive spring is mounted between the column and the ring. The casing receives the accommodating body, the ring, the conductive spring, and a battery that is electrically connected to another electrode of the motor. The protrusion, the top of the conductive spring, and the conductive column are aligned with one another. The battery is further electrically connected to the casing.

Antibodies against il-7r alpha subunit and uses thereof

Provided herein are antibodies that bind to the alpha subunit of an IL-7 receptor (IL-7Rα). Also provided are uses of these antibodies in therapeutic applications, such as treatment of inflammatory diseases. Further provided are cells that produce the antibodies, polynucleotides encoding the heavy and/or light chain regions of the antibodies, and vectors comprising the polynucleotides.

Antibodies against IL-7R alpha subunit and uses thereof

Provided herein are antibodies that bind to the alpha subunit of an IL-7 receptor (IL-7Rα). Also provided are uses of these antibodies in therapeutic applications, such as treatment of inflammatory diseases. Further provided are cells that produce the antibodies, polynucleotides encoding the heavy and/or light chain regions of the antibodies, and vectors comprising the polynucleotides.

Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication

Systems and methods for performing ultrafast laser annealing in a manner that reduces pattern density effects in integrated circuit manufacturing are disclosed. The method includes scanning at least one first laser beam over the patterned surface of a substrate. The at least one first laser beam is configured to heat the patterned surface to a non-melt temperature T nonmelt that is within about 400° C. of the melt temperature T melt . The method also includes scanning at least one second laser beam over the patterned surface and relative to the first laser beam. The at least one second laser beam is pulsed and is configured to heat the patterned surface from the non-melt temperature provided by the at least one first laser beam up to the melt temperature.

Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication

Systems and methods for performing ultrafast laser annealing in a manner that reduces pattern density effects in integrated circuit manufacturing are disclosed. The method includes scanning at least one first laser beam over the patterned surface of a substrate. The at least one first laser beam is configured to heat the patterned surface to a non-melt temperature T nonmelt that is within about 400° C. of the melt temperature T melt . The method also includes scanning at least one second laser beam over the patterned surface and relative to the first laser beam. The at least one second laser beam is pulsed and is configured to heat the patterned surface from the non-melt temperature provided by the at least one first laser beam up to the melt temperature.

Two-beam laser annealing with improved temperature performance

Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.

Non-melt thin-wafer laser thermal annealing methods

Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.

CONTROL OF EGR SYSTEM, AIR THROTTLE SYSTEM AND CHARGING SYSTEM FOR INTERNAL COMBUSTION ENGINES

Verfahren zum Steuern eines Abgasrückführungssystems (32), eines Luftdrosselsystems und eines Ladesystems (40, 160) in einem Verbrennungsmotor (10), wobei das Verfahren umfasst:Bestimmen einer Vorwärtskopplungssteueranweisung für das Abgasrückführungssystem auf Grundlage eines inversen Strömungsmodells des Abgasrückführungssystems, umfassend:Überwachen eines ersten Einganges für das Abgasrückführungssystem auf Grundlage einer effektiven Strömungsfläche des Abgasrückführungssystems;Überwachen eines zweiten Eingangs für das Abgasrückführungssystems auf Grundlage eines Druckwertes in dem Abgasrückführungssystem; undBestimmung der Vorwärtskopplungssteueranweisung für das Abgasrückführungssystem auf Grundlage des ersten Eingangs für das Abgasrückführungssystem und des zweiten Eingangs für das Abgasrückführungssystem;Bestimmen einer Vorwärtskopplungssteueranweisung für das Luftdrosselsystem auf Grundlage eines inversen Strömungsmodells des Luftdrosselsystems, umfassend:Überwachen eines ersten Einganges für das Luftdrosselsystem auf Grundlage einer effektiven Strömungsfläche des Luftdrosselsystems;Überwachen eines zweiten Eingangs für das Luftdrosselsystem auf Grundlage eines Druckwertes in dem Luftdrosselsystem; undBestimmung der Vorwärtskopplungssteueranweisung für das Luftdrosselsystem auf Grundlage des ersten Eingangs für das Luftdrosselsystem und des zweiten Eingangs für das Luftdrosselsystem; undBestimmen einer Vorwärtskopplungssteueranweisung für das Ladesystem auf Grundlage eines inversen Strömungsmodells des Ladesystems, umfassend:Überwachen eines ersten Einganges für das Ladesystem auf Grundlage einer effektiven Strömungsfläche des Ladesystems;Überwachen eines zweiten Eingangs für das Ladesystem auf Grundlage eines Druckwertes in dem Ladesystem; undBestimmen der Vorwärtskopplungssteueranweisung für das Ladesystem auf Grundlage des ersten Einganges für das Ladesystem und des zweiten Einganges für das Ladesystem;Bestimmen einer MIMO-Anweisung für das jeweilige ...

Method of feedforward turbocharger control for boosted engines with multi-route EGR

An engine includes an exhaust gas recirculation system with a high pressure exhaust gas recirculation loop and a low pressure exhaust gas recirculation loop, and an air charging system. A method of controlling the air charging system includes monitoring an actual exhaust gas recirculation rate, operating conditions of a compressor and turbine in the air charging system. A compressor flow is determined based on a target exhaust gas recirculation rate, a target intake manifold pressure and the actual exhaust gas recirculation rate. A power requested by the compressor is determined based on the compressor flow, the target intake manifold pressure, and the monitored operating conditions of the compressor. A power to be generated by the turbine is determined based upon the power requested by the compressor. A turbine flow is determined based upon the power to be generated by the turbine and the monitored operating conditions of the turbine. A system control command is determined based on the turbine flow and the monitored operating conditions of the turbine. The air charging system is controlled based on the system control command.

Method and apparatus to monitor ambient sensing devices

A method is provided to monitor operation of a sensing system for a motor vehicle equipped with inter-vehicle communications capability. The method comprises comparing analogous signals communicated from a plurality of vehicles in close proximity thereto.

Process for the hydrolysis of biomass

Gene disruptions, compositions and methods relating thereto

The present invention relates to transgenic animals, as well as compositions and methods relating to the characterization of gene function. Specifically, the present invention provides transgenic mice comprising disruptions in PRO226, PRO257, PRO268, PRO290, PRO36006, PRO363, PRO365, PRO382, PRO444, PRO705, PRO1071, PRO1125, PRO1134, PRO1155, PRO1281, PRO1343, PRO1379, PRO1380, PRO1387, PRO1419, PRO1433, PRO1474, PRO1550, PRO1571, PRO1572, PRO1759, PRO1904, PRO35193, PRO4341, PRO4348, PRO4369, PRO4381, PRO4407, PRO4425, PRO4985, PRO4989, PRO5737, PRO5800, PRO5993, PRO6017, PRO7174, PRO9744, PRO9821, PRO9852, PRO9873, PRO10196, PRO34778, PRO20233, PRO21956, PRO57290, PRO38465, PRO38683 or PRO85161 genes. Such in vivo studies and characterizations may provide valuable identification and discovery of therapeutics and/or treatments useful in the prevention, amelioration or correction of diseases or dysfunctions associated with gene disruptions such as neurological disorders; cardiovascular, endothelial or angiogenic disorders; eye abnormalities; immunological disorders; oncological disorders; bone metabolic abnormalities or disorders; lipid metabolic disorders; or developmental abnormalities.

Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cells

Provided are resistive switching memory cells and method of forming such cells. A memory cell includes a resistive switching layer disposed between two buffer layers. The electron barrier height of the material used for each buffer layer is less than the electron barrier height of the material used for the resistive switching layer. Furthermore, the thickness of each buffer layer may be less than the thickness of the resistive switching layer. The buffer layers reduce diffusion between the resistive switching layer and electrodes. Furthermore, the buffer layers improve data retention and prevent unintentional resistive switching when a reading signal is applied to the memory cell. The reading signal uses a low voltage and most of the electron tunneling is blocked by the buffer layers during this operation. On the other hand, the buffer layers allow electrode tunneling at higher voltages used for forming and switching signals.

Defect gradient to boost nonvolatile memory performance

Embodiments of the present invention generally relate to a resistive switching nonvolatile memory element that is formed in a resistive switching memory device that may be used in a memory array to store digital data. The memory element is generally constructed as a metal-insulator-metal stack. The resistive switching portion of the memory element includes a getter portion and/or a defect portion. In general, the getter portion is an area of the memory element that is used to help form, during the resistive switching memory device's fabrication process, a region of the resistive switching layer that has a greater number of vacancies or defects as compared to the remainder of resistive switching layer. The defect portion is an area of the memory element that has a greater number of vacancies or defects as compared to the remainder of the resistive switching layer, and is formed during the resistive switching memory device's fabrication process. The addition of the getter or defect portions in a formed memory device generally improves the reliability of the resistive switching memory device, improves the switching characteristics of the formed memory device and can eliminate or reduce the need for the time consuming additional post fabrication “burn-in” or pre-programming steps.

Nonvolatile memory device using a tunnel oxide as a current limiter element

Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.

Nonvolatile memory device using a varistor as a current limiter element

Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.

Nonvolatile resistive memory element with an integrated oxygen isolation structure

A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and/or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and/or operation of the memory device.

Light source lamp cooling mechanism and projection type video display apparatus using the same

【課題】 光源ランプの冷却と排気温度低減を両立できる光源ランプ冷却機構及びそれを用いた投写型映像表示装置を提供する。 【解決手段】 光源ランプ１９の内部に連通する内部用吹出口及び外表面に連通する外部用吹出口１６２，１６３に送風する第１のファン１６と、光源ランプ１９周りの排気を外部に排出する第２のファン１７とを備え、外部用吹出口１６２，１６３を光源ランプ１９の外表面中央部から逸らして形成すると共に、第２のファン１７をその吸込方向が外部用吹出口１６２，１６３側を向くように傾斜して配置した。 【選択図】 図８

Biomass hydrolysis process

The invention relates to a biomass process comprising removal and/or inactivation of an enzyme inhibitor from recycled washing solution.

Reduction of forming voltage in semiconductor devices

This disclosure provides a nonvolatile memory device and related methods of manufacture and operation. The device may include one or more resistive random access memory (RRAM) that use techniques to provide a memory device with more predictable operation. In particular, forming voltage required by particular designs may be reduced through the use of a barrier layer, a reverse polarity forming voltage pulse, a forming voltage pulse where electrons are injected from a lower work function electrode, or through the use of an anneal in a reducing environment. One or more of these techniques may be applied, depending on desired application and results.

Interfacial oxide used as switching layer in a nonvolatile resistive memory element

A nonvolatile resistive memory element includes a host oxide formed from an interfacial oxide layer. The interfacial oxide layer is formed on the surface of a deposited electrode layer via in situ or post-deposition surface oxidation treatments.

Resistive random access memory cells having variable switching characteristics

Provided are resistive random access memory (ReRAM) cells forming arrays and methods of operating such cells and arrays. The ReRAM cells of the same array may have the same structure, such as have the same bottom electrodes, top electrodes, and resistive switching layers. Yet, these cells may be operated in a different manner. For example, some ReRAM cells may be restively switched using lower switching voltages than other cells. The cells may also have different data retention characteristics. These differences may be achieved by using different forming operations for different cells or, more specifically, flowing forming currents in different directions for different cells. The resulting conductive paths formed within the resistive switching layers are believed to switch at or near different electrode interfaces, i.e., within a so called switching zone. In some embodiments, a switching zone of a ReRAM cell may be changed even after the initial formation.

Memory cell having an integrated two-terminal current limiting resistor

A resistor structure incorporated into a resistive switching memory cell with improved performance and lifetime is provided. The resistor structure may be a two-terminal structure designed to reduce the maximum current flowing through a memory cell. A method is also provided for making such a memory cell. The method includes depositing a resistor structure and depositing a variable resistance layer of a resistive switching memory cell of the memory cell, where the resistor structure is disposed in series with the variable resistance layer to limit the switching current of the memory cell. The incorporation of the resistor structure is very useful in obtaining desirable levels of switching currents that meet the switching specification of various types of memory cells. The memory cells may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices.

Reduction of forming voltage in semiconductor devices

A nonvolatile memory device and methods of manufacturing the same has one electrode with a higher work function and a second electrode with a lower work function. The nonvolatile memory device further comprises one or more resistive random access memory (RRAM) cells. The RRAM cells comprise a semiconductor layer with a bandgap of at least four electron volts and a barrier layer between the semiconductor layer and one of the electrodes.

Defect gradient to boost nonvolatile memory performance

Embodiments of the present invention generally relate to a resistive switching nonvolatile memory element that is formed in a resistive switching memory device that may be used in a memory array to store digital data. The memory element is generally constructed as a metal-insulator-metal stack. The resistive switching portion of the memory element includes a getter and/or a defect portion. In general, the getter portion is an area of the memory element that is used to help form, during the resistive switching memory device's fabrication process, a region of the resistive switching layer that has a greater number of vacancies or defects compared to the remainder of resistive switching layer. The defect portion is an area of the memory element that has a greater number of vacancies or defects compared to the remainder of the resistive switching layer, and is formed during the resistive switching memory device's fabrication process.

Nonvolatile memory device using a tunnel oxide as a passive current steering element

Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.