Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 603. Отображено 132.
22-12-2016 дата публикации

IMAGE UP-SAMPLING WITH RELATIVE EDGE GROWTH RATE PRIORS

Номер: US20160371818A1
Автор: Chang Su, Li Tao, SU CHANG, TAO LI, Su Chang, Tao Li
Принадлежит:

A display system is configured to convert Full-High Definition (FHD) image content into Ultra-High Definition (UHD) image content. The display system includes an interface configured to receive image content comprising a first resolution, such as FHD. The display system also includes a display device configured to display image content at a second resolution, such as UHD, the second resolution greater than the first resolution. The display system further includes one or more processors configured to: convert the image content from the first resolution to the second resolution; recover a spatial frequency of the converted image content as a function of a relative edge growth rate measured from the converted image content and an offline-determined relationship between the relative edge growth rates of the converted first image and its corresponding ground truth image; and provide the converted image content with the recovered spatial frequency to the display device.

Подробнее
Номер записи: 1
16-02-2023 дата публикации

MACHINE-LEARNABLE ROBOTIC CONTROL PLANS

Номер: US20230046520A1
Автор: Ning Ye, Maryam Bandari, Klas Jonas Alfred Kronander, Bala Venkata Sai Ravi Krishna Kolluri, Jianlan Luo, Wenzhao Lian, Chang Su
Принадлежит:

Methods, systems, and apparatus, including computer programs encoded on computer storage media, for using learnable robotic control plans. One of the methods comprises obtaining a learnable robotic control plan comprising data defining a state machine that includes a plurality of states and a plurality of transitions between states, wherein: one or more states are learnable states, and each learnable state comprises data defining (i) one or more learnable parameters of the learnable state and (ii) a machine learning procedure for automatically learning a respective value for each learnable parameter of the learnable state; and processing the learnable robotic control plan to generate a specific robotic control plan, comprising: obtaining data characterizing a robotic execution environment; and for each learnable state, executing, using the obtained data, the respective machine learning procedures defined by the learnable state to generate a respective value for each learnable parameter ...

Подробнее
Номер записи: 2
13-08-2020 дата публикации

COLOR GAMUT MAPPING IN THE CIE 1931 COLOR SPACE

Номер: US20200258473A1
Автор: Chang Su, Pradeep Nagesh, Yeong-Taeg Kim, Li Tao, SU CHANG, NAGESH PRADEEP, KIM YEONG-TAEG, TAO LI, Su, Chang, Nagesh, Pradeep, Kim, Yeong-Taeg, Tao, Li
Принадлежит:

One embodiment provides a method comprising determining a target color gamut of a display device, an inner zone of the target color gamut, and an outer zone of the target color gamut. The method further comprises dynamically determining, based on the inner zone and the outer zone, a path along which an input color in a source color gamut of an input content moves. The input color is outside the inner zone. The method further comprises mapping the input color from the source color gamut to an output color in the outer zone based on the path. The input color is rendered as the output color during presentation of the input content on the display device.

Подробнее
Номер записи: 3
06-07-2017 дата публикации

FILTER AND ELECTRONIC DEVICE

Номер: US20170194682A1
Автор: Chang Su, SU CHANG, Su Chang
Принадлежит:

Disclosed is a single notch filter, comprising a dielectric layer, a first metal layer and a second metal layer, wherein the first metal layer and the second metal layer are arranged onto two opposite surfaces of the dielectric layer, the first metal layer comprises a metal microstrip patch, the second metal layer comprises a coplanar waveguide plate and a metal grounding plate, and a fractal defected ground body of the coplanar waveguide plate is coupled with the metal microstrip patch based on the dielectric layer. Other embodiments are described and claimed.

Подробнее
Номер записи: 4
21-04-2022 дата публикации

SYSTEM AND METHOD FOR DYNAMIC QUANTIZATION FOR DEEP NEURAL NETWORK FEATURE MAPS

Номер: US20220121937A1
Автор: Chang Su, Tien C. Bau, Arthita Ghosh
Принадлежит:

A method includes processing, using at least one processor of an electronic device, input data using a first layer of a neural network to generate a feature map. The method also includes representing, using the at least one processor, feature data of the feature map using index values. The index values correspond to multiple records of a look up table (LUT), and the records of the LUT represent a non-uniform distribution of quantization levels of the feature map. The method further includes storing, using the at least one processor, the index values in a memory of the electronic device. The method also includes regenerating, using the at least one processor, the feature data of the feature map by cross-referencing the index values with the LUT. In addition, the method includes processing, using the at least one processor, the feature data using a second layer of the neural network.

Подробнее
Номер записи: 5
30-06-2020 дата публикации

Program interaction system, method, client, and backend server

Номер: US0010701451B2
Автор: Shengpeng Chen, Chang Su, Tengjian Li, Yuan Huang, Jiayu Huang, CHEN SHENGPENG, SU CHANG, LI TENGJIAN, HUANG YUAN, HUANG JIAYU, Chen, Shengpeng, Su, Chang, Li, Tengjian, Huang, Yuan, Huang, Jiayu
Принадлежит: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED, TENCENT TECH SHENZHEN CO LTD

The present disclosure discloses a program interaction method. In the disclosed method, a backend server receives interaction information of a program from a program provider client and program information of a currently watched program from a program viewer client. After receiving the interaction information and the program information, the backend server determines the interaction information that corresponds to the program information and sends the interaction information and a resource gifting interface to the program viewer client. The program viewer client subsequently sends a resource gifting instruction through the resource gifting interface to the backend server to transfer a resource to a performer of the program.

Подробнее
Номер записи: 6
17-01-2023 дата публикации

Perceptual color enhancement based on properties of responses of human vision system to color stimulus

Номер: US0011557265B2
Автор: Chang Su, Chenguang Liu, Pradeep Nagesh
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., Samsung Electronics Co., Ltd.

A method includes determining, by a computing device, a working color space of a source content and a resulting content. The computing device models color saturation variations of different hues in the working color space with one or more properties of responses of a human vision system (HVS) to color stimulus. The computing device generates one or more color saturation variation models based on the responses of the HVS to color stimulus. An input color is mapped from the source content to an output color in the working color space using the one or more color saturation variation models.

Подробнее
Номер записи: 7
31-05-2022 дата публикации

Color gamut mapping in the CIE 1931 color space

Номер: US0011348553B2
Автор: Chang Su, Pradeep Nagesh, Yeong-Taeg Kim, Li Tao
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., Samsung Electronics Co., Ltd.

One embodiment provides a method comprising determining a target color gamut of a display device, an inner zone of the target color gamut, and an outer zone of the target color gamut. The method further comprises dynamically determining, based on the inner zone and the outer zone, a path along which an input color in a source color gamut of an input content moves. The input color is outside the inner zone. The method further comprises mapping the input color from the source color gamut to an output color in the outer zone based on the path. The input color is rendered as the output color during presentation of the input content on the display device.

Подробнее
Номер записи: 8
22-06-2021 дата публикации

Industrial keratinase via genetic engineering and use thereof

Номер: US0011041160B2
Автор: Jinsong Shi, Zhenghong Xu, Jinsong Gong, Heng Li, Chang Su, SHI JINSONG, XU ZHENGHONG, GONG JINSONG, LI HENG, SU CHANG, Shi, Jinsong, Xu, Zhenghong, Gong, Jinsong, Li, Heng, Su, Chang
Принадлежит: JIANGNAN UNIVERSITY, UNIV JIANGNAN

The invention relates to the technical field of industrial biotechnologies, and discloses a keratinase mutant with improved thermal stability and use thereof. The asparagine at position 181, the tyrosine at position 217, and the serine at position 236 in the keratinase derived from Brevibacillus parabrevis (CGMCC No. 10798) are engineered by site-direction mutation, and combined at random to obtain an enzyme with combined mutations. The invention realizes the remarkable improvement of the thermal stability of keratinase, and has good theoretical value and application prospect.

Подробнее
Номер записи: 9
19-05-2022 дата публикации

PERCEPTUAL COLOR ENHANCEMENT BASED ON PROPERTIES OF RESPONSES OF HUMAN VISION SYSTEM TO COLOR STIMULUS

Номер: US20220157273A1
Автор: Chang Su, Chenguang Liu, Pradeep Nagesh
Принадлежит:

A method includes determining, by a computing device, a working color space of a source content and a resulting content. The computing device models color saturation variations of different hues in the working color space with one or more properties of responses of a human vision system (HVS) to color stimulus. The computing device generates one or more color saturation variation models based on the responses of the HVS to color stimulus. An input color is mapped from the source content to an output color in the working color space using the one or more color saturation variation models.

Подробнее
Номер записи: 10
20-10-2020 дата публикации

Array substrate, display panel and display device

Номер: US0010810944B2
Автор: Chang Su, Huijun Jin, SU CHANG, JIN HUIJUN, Su, Chang, Jin, Huijun
Принадлежит: SHANGHAI AVIC OPTO ELECTRONICS CO., LTD., SHANGHAI AVIC OPTOELECTRONICS, SHANGHAI AVIC OPTO ELECTRONICS CO LTD, Shanghai AVIC Optoelectronics Co., Ltd.

An array substrate, a display panel and a display device are provided. The array substrate has a display area including display transistors and gate lines, and a non-display area surrounding the display area and including a gate driving circuit electrically connected to the gate lines. A display transistor includes a display active layer comprising amorphous silicon. The gate driving circuit includes stages of shift registers. A shift register includes a plurality of shift register transistors, a gate signal output terminal, and at least one bootstrap point. The shift register transistors in the shift register include at least one gate output transistor, and the at least one gate output transistor includes a gate electrode electrically connected to the at least one bootstrap point, a first electrode electrically connected to the gate signal output terminal, and a gate output active layer comprising polysilicon.

Подробнее
Номер записи: 11
06-03-2018 дата публикации

System and method for content-adaptive super-resolution via cross-scale self-learning

Номер: US0009911178B2
Автор: Chang Su, Li Tao, SU CHANG, TAO LI, Su Chang, Tao Li
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

A display system converts Full-High Definition (FHD) image content into Ultra-High Definition (UHD) image content. The display system includes an interface that provides image content to a display having a first resolution. The display system also includes a processor that converts an input image from a second resolution to the first resolution. The first resolution is greater than the second resolution. The processor generates a first value corresponding to a lost high-frequency component (HFC) of the input image; generates an initial component of an output image; selects a patch of the input image; estimates a lost HFC of the patch of the initial component based on a portion of the lost HFC of the input image that corresponds to the selected patch; and generates the output image based on a sum of the patch of the initial component and the estimated lost HFC of the patch of the initial component.

Подробнее
Номер записи: 12
25-04-2023 дата публикации

Selecting content for presentation to a user of a social networking system based on a topic associated with a group of which the user is a member

Номер: US0011636165B1
Автор: Zhen Li, Li Ju, Eric Hsin-Chun Huang, Yun Liu, Chang Su, Cassidy Jake Beeve-Morris, Yuan Liang
Принадлежит: Meta Platforms, Inc.

A social networking system allows users to create and join groups in the social networking system, in which each group is associated with one or more interests shared by members of the group. To select content for presentation to a viewing user of the social networking system who is a member of a group, the social networking system may determine one or more topics associated with the group based at least in part on a classification system and on information associated with objects maintained in the social networking system that are similar to the group. The topic(s) associated with the group also may be determined based on information associated with the group, with members of the group, and/or with objects associated with the group. The social networking system may then select one or more content items associated with the topic(s) for presentation to the viewing user via a group page.

Подробнее
Номер записи: 13
16-02-2023 дата публикации

SELF-EMITTING DISPLAY (SED) BURN-IN PREVENTION BASED ON STATIONARY LUMINANCE REDUCTION

Номер: US20230050664A1
Автор: Kamal Jnawali, Joonsoo Kim, Chenguang Liu, Chang Su
Принадлежит:

One embodiment provides a computer-implemented method that includes providing a dynamic list structure that stores one or more detected object bounding boxes. Temporal analysis is applied that updates the dynamic list structure with object validation to reduce temporal artifacts. A two-dimensional (2D) buffer is utilized to store a luminance reduction ratio of a whole video frame. The luminance reduction ratio is applied to each pixel in the whole video frame based on the 2D buffer. One or more spatial smoothing filters are applied to the 2D buffer to reduce a likelihood of one or more spatial artifacts occurring in a luminance reduced region.

Подробнее
Номер записи: 14
21-12-2021 дата публикации

Electronic device and antenna

Номер: US0011205833B2
Автор: Wenlei Wang, Chang Su, Weimin Bao
Принадлежит: LENOVO (BEIJING) CO., LTD.

Embodiments of the present disclosure provide an electronic device and an antenna. The antenna for includes a first component configured for high frequency feed; a second component configured for low frequency feed; a third component configured for high frequency signal transmission; and a fourth component configured for low frequency signal transmission. The first component is coupling a high frequency signal to the third component, and the second component is coupling a low frequency signal to the fourth component.

Подробнее
Номер записи: 15
16-03-2021 дата публикации

Electronic device

Номер: US0010951244B2
Автор: Weimin Bao, Wenlei Wang, Chang Su, BAO WEIMIN, WANG WENLEI, SU CHANG, Bao, Weimin, Wang, Wenlei, Su, Chang
Принадлежит: LENOVO (BEIJING) CO., LTD., LENOVO BEIJING CO LTD, Lenovo (Beijing) Co., Ltd.

An electronic device is provided. The electronic device includes a housing, an audio output device, and a radio frequency (RF) device. The housing includes at least a conductive first portion made of a conductive material, and the conductive first portion has an opening. The audio output device is disposed in the housing and corresponding to the opening to output an audio, a space exists between the audio output device and the housing, and the audio passes through the opening to be perceived by a listener outside the housing. The radio frequency (RF) device is disposed in the space for radiating a wireless signal under a coupling effect of the opening of the conductive first portion of the housing.

Подробнее
Номер записи: 16
10-01-2019 дата публикации

SELECTING CONTENT FOR PRESENTATION TO A USER OF A SOCIAL NETWORKING SYSTEM BASED ON A TOPIC ASSOCIATED WITH A GROUP OF WHICH THE USER IS A MEMBER

Номер: US20190012387A1
Автор: Zhen Li, Li Ju, Eric Hsin-Chun Huang, Yun Liu, Chang Su, Cassidy Jake Beeve-Morris, Yuan Liang, LI ZHEN, JU LI, HUANG ERIC HSIN-CHUN, LIU YUN, SU CHANG, BEEVE-MORRIS CASSIDY JAKE, LIANG YUAN, Li, Zhen, Ju, Li, Huang, Eric Hsin-Chun, Liu, Yun, Su, Chang, Beeve-Morris, Cassidy Jake, Liang, Yuan
Принадлежит:

A social networking system allows users to create and join groups in the social networking system, in which each group is associated with one or more interests shared by members of the group. To select content for presentation to a viewing user of the social networking system who is a member of a group, the social networking system may determine one or more topics associated with the group based at least in part on a classification system and on information associated with objects maintained in the social networking system that are similar to the group. The topic(s) associated with the group also may be determined based on information associated with the group, with members of the group, and/or with objects associated with the group. The social networking system may then select one or more content items associated with the topic(s) for presentation to the viewing user via a group page.

Подробнее
Номер записи: 17
12-06-2018 дата публикации

Filter and electronic device

Номер: US0009997817B2
Автор: Chang Su, SU CHANG, Su, Chang
Принадлежит: Lenovo (Beijing) Limited, LENOVO BEIJING LTD

Disclosed is a single notch filter, comprising a dielectric layer, a first metal layer and a second metal layer, wherein the first metal layer and the second metal layer are arranged onto two opposite surfaces of the dielectric layer, the first metal layer comprises a metal microstrip patch, the second metal layer comprises a coplanar waveguide plate and a metal grounding plate, and a fractal defected ground body of the coplanar waveguide plate is coupled with the metal microstrip patch based on the dielectric layer. Other embodiments are described and claimed.

Подробнее
Номер записи: 18
13-07-2023 дата публикации

PERCEPTUAL COLOR ENHANCEMENT BASED ON PROPERTIES OF RESPONSES OF HUMAN VISION SYSTEM TO COLOR STIMULUS

Номер: US20230222991A1
Автор: Chang Su, Chenguang Liu, Pradeep Nagesh
Принадлежит:

A method includes modeling, by a computing device, color saturation variations of different hues in a working color space with one or more properties of responses of a human vision system (HVS) to color stimulus. The computing device further generates one or more color saturation variation models based on the responses of the HVS to color stimulus.

Подробнее
Номер записи: 19
21-04-2020 дата публикации

Perceptual hue preserved color-gamut transferring in non-uniform CIE-1931 color space

Номер: US0010630867B2
Автор: Chang Su, Li Tao, Yeong-Taeg Kim, SU CHANG, TAO LI, KIM YEONG-TAEG, Su, Chang, Tao, Li, Kim, Yeong-Taeg
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A perceptual hue preserved (PHP) color gamut transferring (CGT) method carried out in CIE-1931 color space includes obtaining a target gamut based on a rendering device of a content. Multiple color-moving constraints (CMC) are retrieved from a dataset. Perceptually consistent hue loci (PCHL) of out-of-gamut (OOG) colors of the content are estimated according to the CMC and a protection zone boundary. Each of the OOG colors are moved along its PCHL to a final point inside the target gamut based on a CGT plan data. The CGT plan data includes target and source boundary information formed using the CMC and the protection zone boundary.

Подробнее
Номер записи: 20
24-11-2016 дата публикации

SYSTEM AND METHOD FOR CONTENT-ADAPTIVE SUPER-RESOLUTION VIA CROSS-SCALE SELF-LEARNING

Номер: US20160343109A1
Автор: Chang Su, Li Tao, SU CHANG, TAO LI, Su Chang, Tao Li
Принадлежит:

A display system converts Full-High Definition (FHD) image content into Ultra-High Definition (UHD) image content. The display system includes an interface that provides image content to a display having a first resolution. The display system also includes a processor that converts an input image from a second resolution to the first resolution. The first resolution is greater than the second resolution. The processor generates a first value corresponding to a lost high-frequency component (HFC) of the input image; generates an initial component of an output image; selects a patch of the input image; estimates a lost HFC of the patch of the initial component based on a portion of the lost HFC of the input image that corresponds to the selected patch; and generates the output image based on a sum of the patch of the initial component and the estimated lost HFC of the patch of the initial component.

Подробнее
Номер записи: 21
26-06-2018 дата публикации

Image up-sampling with relative edge growth rate priors

Номер: US0010007970B2
Автор: Chang Su, Li Tao, SU CHANG, TAO LI, Su, Chang, Tao, Li
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

A display system is configured to convert Full-High Definition (FHD) image content into Ultra-High Definition (UHD) image content. The display system includes an interface configured to receive image content comprising a first resolution, such as FHD. The display system also includes a display device configured to display image content at a second resolution, such as UHD, the second resolution greater than the first resolution. The display system further includes one or more processors configured to: convert the image content from the first resolution to the second resolution; recover a spatial frequency of the converted image content as a function of a relative edge growth rate measured from the converted image content and an offline-determined relationship between the relative edge growth rates of the converted first image and its corresponding ground truth image; and provide the converted image content with the recovered spatial frequency to the display device.

Подробнее
Номер записи: 22
19-03-2020 дата публикации

PERCEPTUAL HUE PRESERVED COLOR-GAMUT TRANSFERRING IN NON-UNIFORM CIE-1931 COLOR SPACE

Номер: US20200092441A1
Автор: Chang Su, Li Tao, Yeong-Taeg Kim, SU CHANG, TAO LI, KIM YEONG-TAEG, Su, Chang, Tao, Li, Kim, Yeong-Taeg
Принадлежит:

A perceptual hue preserved (PHP) color gamut transferring (CGT) method carried out in CIE-1931 color space includes obtaining a target gamut based on a rendering device of a content. Multiple color-moving constraints (CMC) are retrieved from a dataset. Perceptually consistent hue loci (PCHL) of out-of-gamut (OOG) colors of the content are estimated according to the CMC and a protection zone boundary. Each of the OOG colors are moved along its PCHL to a final point inside the target gamut based on a CGT plan data. The CGT plan data includes target and source boundary information formed using the CMC and the protection zone boundary.

Подробнее
Номер записи: 23
09-02-2023 дата публикации

CONTENT CREATIVE INTENTION PRESERVATION UNDER VARIOUS AMBIENT COLOR TEMPERATURES

Номер: US20230039667A1
Автор: Dung Trung Vo, Chenguang Liu, Chang Su, McClain C. Nelson, Madhu Athreya, William Mandel, Soojung Hyun
Принадлежит:

One embodiment provides a method comprising receiving an input content, and receiving ambient contextual data indicative of one or more ambient lighting conditions of an environment including a display device. The input content has corresponding metadata that at least partially represents a creative intent indicative of how the input content is intended to be viewed. The method further comprises adaptively correcting the input content based on the ambient contextual data to preserve the creative intent, and providing the corrected input content to the display device for presentation. The adaptively correcting comprises applying automatic white balancing to the input content to correct color tone of the input content.

Подробнее
Номер записи: 24
06-06-2023 дата публикации

Electronic device

Номер: US0011670845B2
Автор: Chang Su
Принадлежит: LENOVO (BEIJING) LIMITED, Lenovo (Beijing) Limited

An electronic device includes a base, a connection device, a body, an antenna assembly, and a shield member. The body rotates to a first operating state and a second operating state relative to the base through the connection device. The shield member moves in the base to a shielding state and a non-overlapping state. When the body is in the first operating state, the body is not overlapping with the antenna assembly in a first direction, the shield member is in the non-overlapping state, and the shield member is not overlapping with the antenna assembly in the first direction. When the body is in the second operating state, the body overlaps at least a portion of the antenna assembly in the first direction, the shield member is in the shielding state, and the shield member shields between the antenna assembly and the body.

Подробнее
Номер записи: 25
25-01-2022 дата публикации

Inhibition of LET7I as a means to enhance the protective effect of progesterone against stroke

Номер: US0011230711B2
Автор: Meharvan Singh, Chang Su, Trinh Nguyen
Принадлежит: UNIVERSITY OF NORTH TEXAS HEALTH SCIENCE CENTER

The subject invention provides methods of treating neurological disease or disorder, such as brain injuries, such as stroke, traumatic brain injury (TBI), or other ischemic events that cause brain injury by inhibiting or down-regulating Let-7i activity or function. The disclosed methods may have the potential to extend the “window of opportunity” for treatment of such injuries and enhance the effectiveness of existing therapeutics.

Подробнее
Номер записи: 26
05-07-2018 дата публикации

ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE

Номер: US20180190206A1
Автор: Chang Su, Huijun Jin
Принадлежит:

An array substrate, a display panel and a display device are provided. The array substrate has a display area including display transistors and gate lines, and a non-display area surrounding the display area and including a gate driving circuit electrically connected to the gate lines. A display transistor includes a display active layer comprising amorphous silicon. The gate driving circuit includes stages of shift registers. A shift register includes a plurality of shift register transistors, a gate signal output terminal, and at least one bootstrap point. The shift register transistors in the shift register include at least one gate output transistor, and the at least one gate output transistor includes a gate electrode electrically connected to the at least one bootstrap point, a first electrode electrically connected to the gate signal output terminal, and a gate output active layer comprising polysilicon.

Подробнее
Номер записи: 27
17-03-2020 дата публикации

Selecting content for presentation to a user of a social networking system based on a topic associated with a group of which the user is a member

Номер: US0010592570B2
Автор: Zhen Li, Li Ju, Eric Hsin-Chun Huang, Yun Liu, Chang Su, Cassidy Jake Beeve-Morris, Yuan Liang, LI ZHEN, JU LI, HUANG ERIC HSIN-CHUN, LIU YUN, SU CHANG, BEEVE-MORRIS CASSIDY JAKE, LIANG YUAN, Li, Zhen, Ju, Li, Huang, Eric Hsin-Chun, Liu, Yun, Su, Chang, Beeve-Morris, Cassidy Jake, Liang, Yuan
Принадлежит: Facebook, Inc., FACEBOOK INC

A social networking system allows users to create and join groups in the social networking system, in which each group is associated with one or more interests shared by members of the group. To select content for presentation to a viewing user of the social networking system who is a member of a group, the social networking system may determine one or more topics associated with the group based at least in part on a classification system and on information associated with objects maintained in the social networking system that are similar to the group. The topic(s) associated with the group also may be determined based on information associated with the group, with members of the group, and/or with objects associated with the group. The social networking system may then select one or more content items associated with the topic(s) for presentation to the viewing user via a group page.

Подробнее
Номер записи: 28
05-05-2022 дата публикации

COLOR GAMUT COMPRESSION AND EXTENSION

Номер: US20220139355A1
Автор: Chang Su, Chenguang Liu, Pradeep Nagesh
Принадлежит:

One embodiment provides a method comprising determining a first representation of a source gamut of an input content in a first two-dimensional (2D) device-independent color space, determining a second representation of a target gamut of a display device in a second 2D device-independent color space, and determining a color transition protection zone (TPZ) based on the source gamut and the target gamut. The method further comprises utilizing a color gamut mapping (CGM) module to perform, based on the TPZ, linear color gamut compression from the first 2D device-independent color space to the second 2D device-independent color space if the target gamut is narrower than the source gamut. The method further comprises utilizing the same CGM module to perform, based on the TPZ, linear color gamut extension from the first 2D device-independent color space to the second 2D device-independent color space if the target gamut is wider than the source gamut.

Подробнее
Номер записи: 29
02-11-2023 дата публикации

STANDARD DYNAMIC RANGE (SDR) TO HIGH DYNAMIC RANGE (HDR)INVERSE TONE MAPPING USING MACHINE LEARNING

Номер: US20230351562A1
Автор: Bowen Zhao, Chenguang Liu, Dung Trung Vo, McClain Craig Nelson, Chang Su
Принадлежит:

One embodiment provides a method comprising receiving, as input, standard dynamic range (SDR) content, and obtaining statistics information corresponding to the SDR content. The method further comprises determining, based on the statistics information, one or more parameters for an inverse tone mapping (ITM) curve using a machine learning model. The method further comprises converting the SDR content to high dynamic range (HDR) content using the ITM curve. The resulting HDR content is provided to a display device for presentation.

Подробнее
Номер записи: 30
09-11-2023 дата публикации

ORGANIC LIGHT EMITTING DIODE (OLED) BURN-IN PREVENTION BASED ON STATIONARY PIXEL AND LUMINANCE REDUCTION

Номер: US20230360595A1
Автор: Kamal Jnawali, Joonsoo Kim, Chenguang Liu, Chang Su
Принадлежит:

One embodiment provides a computer-implemented method that includes receiving region information from a stationary region detection process for a video. A processor performs a flat region ghosting artifact removal process that updates the region information with a flat region indicator utilizing the region information and the video. The processor further performs a region based luminance reduction process utilizing the updated region information with the flat region indicator for display ghosting artifact removal and burn-in protection.

Подробнее
Номер записи: 31
20-09-2018 дата публикации

PROGRAM INTERACTION SYSTEM, METHOD, CLIENT, AND BACKEND SERVER

Номер: US20180270541A1
Автор: Shengpeng CHEN, Chang Su, Tengjian Li, Yuan Huang, Jiayu Huang, CHEN SHENGPENG, SU CHANG, LI TENGJIAN, HUANG YUAN, HUANG JIAYU, CHEN, Shengpeng, Su, Chang, Li, Tengjian, Huang, Yuan, Huang, Jiayu
Принадлежит: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED

The present disclosure discloses a program interaction method. In the disclosed method, a backend server receives interaction information of a program from a program provider client and program information of a currently watched program from a program viewer client. After receiving the interaction information and the program information, the backend server determines the interaction information that corresponds to the program information and sends the interaction information and a resource gifting interface to the program viewer client. The program viewer client subsequently sends a resource gifting instruction through the resource gifting interface to the backend server to transfer a resource to a performer of the program.

Подробнее
Номер записи: 32
19-01-2012 дата публикации

APPARATUS AND METHOD OF SCALABLE ENCODING OF 3D MESH, AND APPARATUS AND METHOD OF SCALABLE DECODING OF 3D MESH

Номер: US20120013608A1
Автор: Ahn Jae Kyun, AHN Min Su, Kim Chang Su, Kim Do Kyoon, Lee Dae Youn
Принадлежит:

A scalable three-dimensional (3D) mesh encoding method includes dividing the 3D mesh into layers of complexity into a plurality of graduated levels and generating vertex position information and connectivity information of each of the plurality of levels. The vertex position information about the 3D mesh is encoded based on a weighting in each bit plane and vertex position information having a higher weighting in each bit plane is first encoded. 1. A scalable three-dimensional (3D) mesh encoding apparatus , comprising:a 3D mesh simplifier to divide layers of complexity of a 3D mesh into a plurality of graduated levels and to generate vertex position information and connectivity information about each of the plurality of levels;a weighting calculator to calculate a weighting of the vertex position information; anda 3D mesh encoder to encode the 3D mesh based on the weighting of the vertex position information.2. The apparatus of claim 1 , wherein the weighting calculator calculates a weighting of the vertex position information in each bit plane in the respective levels.3. The apparatus of claim 2 , wherein the weighting calculator calculates the weighting of the vertex position information based on at least one of level information claim 2 , an extent of a bit plane claim 2 , and difference information in each level.4. The apparatus of claim 2 , wherein the 3D mesh encoder encodes the vertex position information based on the weighting in each bit plane.5. The apparatus of claim 4 , wherein the 3D mesh encoder encodes the connectivity information based on a level.600. The apparatus of claim 1 , wherein the 3D mesh simplifier sets connectivity information and vertex position information associated with a base mesh of the 3D mesh to a level claim 1 , and sets vertex position information and connectivity information about an additional vertex to restore a mesh form in each level to another level than the level .7. A scalable three-dimensional (3D) mesh decoding ...

Подробнее
Номер записи: 33
01-03-2012 дата публикации

REFLECTING SHEET AND METHOD OF FABRICATING THE SAME

Номер: US20120050902A1
Автор: CHANG Su-Jin, Han Sang-Dae, Kim Sung-Hun, Lee Sang-Hyun, Moon Won-Taek
Принадлежит:

A method of fabricating a reflecting sheet includes: providing a base sheet including a reflecting layer, an upper surface layer over the reflecting layer and a lower surface layer under the reflecting layer, the reflecting layer including a fine foam; dividing the base sheet into upper and lower division sheets; and forming a reinforcing layer on each of the upper and lower division sheets to constitute the reflecting sheet. 1. A method of fabricating a reflecting sheet , comprising:providing a base sheet including a reflecting layer, an upper surface layer over the reflecting layer and a lower surface layer under the reflecting layer, the reflecting layer including a fine foam;dividing the base sheet into upper and lower division sheets; andforming a reinforcing layer on each of the upper and lower division sheets to constitute the reflecting sheet.2. The method according to claim 1 , wherein a first area of the base sheet is the same as a second area of each of the upper and lower division sheets.3. The method according to claim 1 , wherein a knife of a dieboard is disposed at a central portion of an end side surface of the base sheet and the base sheet is continuously divided into the upper and lower division sheets by the knife.4. The method according to claim 1 , further comprising cutting each of the upper and lower division sheets to form the reflecting sheet.5. The method according to claim 1 , wherein the reflecting layer of the base sheet is divided into upper and lower reflecting layers claim 1 , and wherein the upper surface layer and the upper reflecting layer constitute the upper division sheet and the lower surface layer and the lower reflecting layer constitute the lower division sheet.6. The method according to claim 1 , wherein the reinforcing layer is formed on at least one of a division surface and the upper surface layer of the upper division sheet and is formed on at least one of a division surface and the lower surface layer of the lower ...

Подробнее
Номер записи: 34
29-03-2012 дата публикации

Multi-layered substrate

Номер: US20120073871A1
Автор: Bernd Karl Appelt, Ming-Chiang Lee, You-Lung Yen, Yuan-Chang Su
Принадлежит: Advanced Semiconductor Engineering Inc

The present invention directs to double-sided multi-layered substrate a base, at least a through-hole passing through the base, patterned first and second metal layers formed on the two opposite surfaces of the base, and first and second plating layers. The first plating layer covers a sidewall of the through-hole and the bottom surface surrounding a bottom opening of the through hole. The second plating layer covers the first plating layer and the top surface surrounding a top opening of the through hole.

Подробнее
Номер записи: 35
29-03-2012 дата публикации

SEMICONDUCTOR CHIP PACKAGE

Номер: US20120074540A1
Автор: Cho Kyong-Soon, CHOI Kyoung-Sei, Kim Chang-Su, Kim Keung-Beum, Ko Jae-Hyok, Lee Kwan-Jai
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A structure of a semiconductor chip package is provided. The semiconductor chip package includes: a substrate; a semiconductor chip mounted on a first surface of the substrate; a plurality of electrode pads on a second surface, different from the first surface, of the substrate; and an electrostatic discharge protection pad overlapping a portion of a first electrode pad and a portion of a second electrode pad among the plurality of electrode pads. 1. A semiconductor chip package comprising:a substrate;a semiconductor chip mounted on a first surface of the substrate;a plurality of electrode pads on a second surface, different from the first surface, of the substrate, the plurality of electrode pads comprising a first electrode pad and a second electrode pad; andan electrostatic discharge protection pad overlapping a portion of the first electrode pad and a portion of the second electrode pad.2. The semiconductor chip package of claim 1 , wherein the first electrode pad is a ground electrode pad claim 1 , and the second electrode pad is a non-connected (NC) pad.3. The semiconductor chip package of claim 1 , wherein the electrostatic discharge protection pad comprises a voltage sensitive material having an insulating property claim 1 , which is converted into a conductive material when electrostatic discharge is applied to the electrostatic discharge protection pad.4. The semiconductor chip package of claim 3 , wherein when the electrostatic discharge is applied claim 3 , the first electrode pad is electrically connected to the second electrode pad by the electrostatic discharge protection pad.5. The semiconductor chip package of claim 3 , wherein the voltage sensitive material comprises resin and metallic particles.6. The semiconductor chip package of claim 5 , wherein the resin comprises at least one of epoxy claim 5 , urethane claim 5 , acryl claim 5 , and silicon claim 5 , and the metallic particles comprise at least one of nickel claim 5 , silicon claim 5 , and ...

Подробнее
Номер записи: 36
19-04-2012 дата публикации

BLUETOOTH HEADSET FOR MOBILE PHONE

Номер: US20120094602A1
Автор: KWON Oh-Hyuck, LEE Chang-Su, Lee Seung-Joo
Принадлежит:

A Bluetooth headset for a mobile phone includes a body configured to transmit and receive a signal to and from a mobile phone via Bluetooth communication. The body is connected to at least one of a Subscriber Identification Module (SIM) card and a Universal SIM (USIM) card, and is further configured to obtain subscriber information from the one of the SIM card and the USIM card to provide the obtained subscriber information to the mobile phone. 1. A Bluetooth headset for a mobile phone , the Bluetooth headset comprising:a body configured to transmit and receive a signal to and from the mobile phone via Bluetooth communication,wherein the body is connected to one of a Subscriber Identification Module (SIM) card and a Universal SIM (USIM) card, and is further configured to obtain subscriber information from the one of the SIM card and the USIM card to provide the subscriber information obtained to the mobile phone.2. The headset of claim 1 , wherein the one of the SIM card and the USIM card is detachable.3. The headset of claim 1 , wherein the mobile phone identifies a mobile communication subscriber using the subscriber information.4. The headset of claim 1 , wherein the mobile phone includes at least one of a SIM card and a USIM card and selectively uses subscriber information provided from one of the SIM card claim 1 , the USIM card claim 1 , and the body.5. The headset of claim 1 , wherein the mobile phone selects and uses subscriber information provided from the Bluetooth headset.6. The headset of claim 1 , wherein the Bluetooth headset provides only subscriber information to the mobile phone and does not transmit and receive any other signal to and from the mobile phone.7. The headset of claim 1 , wherein the one of the SIM card and the USIM card include subscriber information for more than one telephone numbers.8. The headset of claim 1 , wherein the mobile phone selects and uses subscriber information for one of the more than one telephone numbers.9. A mobile ...

Подробнее
Номер записи: 37
14-06-2012 дата публикации

METHOD OF FORMING TITANIUM NITRADE (TiN) FILM, NONVOLATILE MEMORY DEVICE USING THE TiN FILM, AND METHOD OF MANUFACTURING THE NONVOLATILE MEMORY DEVICE

Номер: US20120149166A1
Автор: Chung Kyung-Min, Jung Sug-Woo, Kim Chang-Su, Lee Jin-Il, Park Young-Lim
Принадлежит:

A method of manufacturing a nonvolatile memory device includes forming an insulating film pattern, which includes apertures, on a substrate, forming a switching element in each of the apertures, forming a bottom electrode on the switching element by using a silicon (Si)-doped titanium nitride (TiN) film, and forming a variable resistance material pattern on the bottom electrode. The Si-doped TiN film is formed by repeatedly forming a TiN film and doping the TiN film with Si. 1. A method of manufacturing a nonvolatile memory device , the method comprising:forming an insulating film pattern, which comprises apertures, on a substrate;forming a switching element in each of the apertures;forming a bottom electrode on the switching element by using a silicon (Si)-doped titanium nitride (TiN) film; andforming a variable resistance material pattern on the bottom electrode,wherein the Si-doped TiN film is formed by repeatedly forming a TiN film and doping the TiN film with Si.2. The method of claim 1 , wherein the TiN film is formed by successively repeating a plurality of times an operation of depositing a TiN precursor using an atomic layer deposition (ALD) method and making the deposited TiN film react with a reaction gas.3. The method of claim 2 , wherein the TiN precursor is any one of tetrakis-(dimethylamino)-titanium (TDMAT) claim 2 , tetrakis-(diethylamino)-titanium (TDEAT) claim 2 , tetrakis-(ethylmethylamino)-titanium (TEMAT) claim 2 , and a combination of these materials.4. The method of claim 2 , wherein the reaction gas comprises at least one of ammonia (NH) and nitrogen (N).5. The method of claim 1 , wherein in the doping of the TiN film with Si claim 1 , a Si precursor is made to react with the TiN film using an atomic layer deposition (ALD) method.6. The method of claim 5 , wherein the Si precursor is any one of bis-(tert-butylamino)-silane (BTBAS) claim 5 , tris-(dimethylamino)-silane (3DMAS) claim 5 , tetrakis-(tert-butylamino)-silane (TTBAS) claim 5 , and ...

Подробнее
Номер записи: 38
26-07-2012 дата публикации

APPARATUS AND METHOD FOR DATA PROCESSING

Номер: US20120189220A1
Автор: Ahn Jae Kyun, AHN Min Su, Kim Chang Su, Kim Do Kyoon, Lee Dae Youn, Rhee Tae Hyun
Принадлежит:

A data processing apparatus and method. A vertex grouping unit of the data processing apparatus may group, into at least one group, a plurality of vertices included in a three-dimensional (3D) object desired to be compressed. A prediction mode determination unit may determine a prediction mode for compressing a vertex position with respect to each of the at least one group. A coder may code a prediction error vector and an identification (ID) index of the prediction mode determined with respect to each of the at least one group. 1. A data processing apparatus , comprising:a vertex grouping unit to group, into at least one group, a plurality of vertices included in a three-dimensional (3D) object;a prediction mode determination unit to determine a prediction mode for compressing a vertex position with respect to each of the at least one group; anda coder to code a prediction error vector and an identification (ID) index of the prediction mode determined with respect to each of the at least one group.2. The data processing apparatus of claim 1 , wherein the vertex grouping unit groups claim 1 , into the at least one group claim 1 , the plurality of vertices included in the 3D object so that a number of vertices less than or equal to a first threshold are included in a single group.3. The data processing apparatus of claim 2 , wherein the vertex grouping unit determines whether a group is to be divided so that a number of vertices greater than the first threshold are not included in a single group.4. The data processing apparatus of claim 3 , wherein when a number of vertices belonging to a single group exceeds the first threshold according to an addition of a decimated vertex claim 3 , a single region is divided into two regions.5. The data processing apparatus of claim 1 , further comprising:a preprocessor to simplify a mesh included in the 3D object by decimating at least a portion from the plurality of vertices included in the 3D object.6. The data processing ...

Подробнее
Номер записи: 39
16-08-2012 дата публикации

Systems and Methods for Providing Categorized Channel Reservation

Номер: US20120207101A1
Автор: Chia-Ming Chang, Ching-Hwa Yu, Shih-Chang Su
Принадлежит: MediaTek Inc

A wireless communications system for categorized channel reservation is provided with a first wireless communications module and a second wireless communications module. The first wireless communications module transmits or receives a plurality of first wireless signals. The second wireless communications module transmits a first control packet according to an activity schedule of the first wireless communications module to disable a plurality of wireless communications stations from data transmissions, and transmit a second control packet to enable a predetermined number of the wireless communications stations to perform the data transmissions.

Подробнее
Номер записи: 40
25-10-2012 дата публикации

ANODE ACTIVE MATERIAL, ANODE AND LITHIUM BATTERY INCLUDING THE MATERIAL, AND METHOD OF PREPARING THE MATERIAL

Номер: US20120270108A1
Автор: Do Ui-Song, Kim Beom-Kwon, Kim Jae-Myung, Lee So-Ra, Shin Chang-Su
Принадлежит: Samsung SDI Co., Ltd.

In one aspect, an anode active material is provided. The anode active material may include a crystalline carbon-based material that includes a core having a lattice spacing dof about 0.35 nm or more, and titanium-based oxide particles. 1. An anode active material comprising a core ,wherein the core comprises:{'sub': '002', 'a crystalline carbon-based material having a lattice spacing dof about 0.35 nm or more; and'}titanium-based oxide particles.2. The anode active material of claim 1 , wherein the lattice spacing dof the crystalline carbon-based material is in a range of about 0.35 nm to about 0.4 nm.3. The anode active material of claim 1 , wherein the titanium-based oxide particles are coated by the crystalline carbon-based material.4. The anode active material of claim 1 , wherein the titanium-based oxide particles are dispersed in the core.5. The anode active material of claim 1 , wherein a content of the titanium-based oxide particles ranges from above 0 wt % to about 10 wt % based on a total weight of the core.6. The anode active material of claim 1 , wherein diameters of the titanium-based oxide particles are in a range of about 10 nm to about 990 nm.7. The anode active material of claim 1 , wherein the titanium-based oxide is one or more selected from the group consisting of LiTiO claim 1 , TiO claim 1 , LiTiO claim 1 , and LiTiO.8. The anode active material of claim 1 , wherein the core further comprises a metal alloyable with lithium.9. The anode active material of claim 8 , wherein the metal alloyable with lithium is coated by a crystalline carbon-based material.10. The anode active material of claim 8 , wherein the metal alloyable with lithium is dispersed in the core.11. The anode active material of claim 8 , wherein a content of the metal alloyable with lithium ranges from above 0 wt % to about 10 wt % based on a total weight of the core.12. The anode active material of claim 8 , wherein the metal alloyable with lithium is composed of particles having ...

Подробнее
Номер записи: 41
15-11-2012 дата публикации

NEGATIVE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, AND LITHIUM BATTERY INCLUDING THE SAME

Номер: US20120288766A1
Автор: Do Ui-Song, Kim Beom-Kwon, Kim Jae-Myung, Lee So-Ra, Shin Chang-Su
Принадлежит: Samsung SDI Co., Ltd.

Provided are a negative active material, a method of preparing the same, and a lithium battery including the negative active material. The negative active material includes a carbonaceous core that has a sulfur content of about 10 ppm to 900 ppm; and an amorphous carbon layer continuously formed on a surface of the carbonaceous core, wherein the carbonaceous core has a crystalloid plate structure, and a crystallite size measured from a full width at half maximum of the peak with respect to the surface (002) of about 10 nm to about 45 nm in an X-ray diffraction spectrum of the carbonaceous core. The lithium battery including a negative electrode including the negative active material has improved capacity characteristics and ring lifetime characteristics. 1. A negative active material comprising:a carbonaceous core comprising a sulfur content of from about 10 ppm to 900 ppm; andan amorphous carbon layer continuously formed on a surface of the carbonaceous core,wherein the carbonaceous core has a crystalloid plate structure, and a crystallite size measured from a full width at half maximum of the peak with respect to the surface (002) of from about 10 nm to about 45 nm in an X-ray diffraction spectrum of the carbonaceous core.2. The negative active material of claim 1 , wherein the carbonaceous core has a peak with respect to a surface (002) at a Bragg angle 2θ of 26.4°±0.1° in the X-ray diffraction spectrum of the carbonaceous core.3. The negative active material of claim 1 , wherein the carbonaceous core has a full width at half maximum of the peak with respect to the surface (002) of from about 0.2° to about 0.6 in the X-ray diffraction spectrum of the carbonaceous core.4. The negative active material of claim 1 , wherein the carbonaceous core has an interlayer spacing (d) of the surface (002) measured by X-ray diffraction of about 3.36 Å to about 3.37 Å.5. The negative active material of claim 1 , wherein the amorphous carbon layer is a pitch coating.6. The ...

Подробнее
Номер записи: 42
15-11-2012 дата публикации

NEGATIVE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, AND LITHIUM BATTERY INCLUDING THE SAME

Номер: US20120288768A1
Автор: Do Ui-Song, Kim Beom-Kwon, Kim Jae-Myung, Lee So-Ra, Shin Chang-Su
Принадлежит: Samsung SDI Co., Ltd.

Provided are a negative active material, a method of preparing the same, and a lithium battery including the negative active material, wherein the negative active material includes a carbonaceous material that has a peak with respect to a surface (002) at a Bragg angle 2θ of 26.4°±0.1° in an X-ray diffraction spectrum, has a full width at half maximum of the peak with respect to the surface (002) of about 0.2° to about 0.6°, has an interlayer spacing (d) of the surface (002) measured by X-ray diffraction of about 3.36 Å to about 3.37 Å, and has a crystallite size measured from the full width at half maximum of the peak with respect to the surface (002) of about 10 nm to about 45 nm, wherein the carbonaceous material includes a core; and an amorphous carbon layer disposed on a non-cracked surface portion of the core. 1. A negative active material comprising a carbonaceous material that has a peak with respect to a surface (002) at a Bragg angle 2θ of 26.4°±0.1° in an X-ray diffraction spectrum , has a full width at half maximum of the peak with respect to the surface (002) of from about 0.2° to about 0.6° , has an interlayer spacing (d) of the surface (002) measured by X-ray diffraction of from about 3.36 Å to about 3.37 Å , and has a crystallite size measured from the full width at half maximum of the peak with respect to the surface (002) of from about 10 nm to about 45 nm.2. The negative active material of claim 1 , wherein the carbonaceous material has a crystalloid plate structure.3. The negative active material of claim 1 , wherein the negative active material comprises:a core comprising a carbonaceous material; andan amorphous carbon layer disposed on a non-cracked portion of a surface of the core.4. The negative active material of claim 3 , wherein the amorphous carbon layer is a pitch coating.5. The negative active material of claim 3 , wherein the negative active material is spherical or oval claim 3 , and a longer direction particle size thereof dis from ...

Подробнее
Номер записи: 43
03-01-2013 дата публикации

NEGATIVE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, AND LITHUM BATTERY INCLUDING NEGATIVE ACTIVE MATERIAL

Номер: US20130004846A1
Автор: Do Ui-Song, Kim Beom-Kwon, Kim Jae-Myung, Lee So-Ra, Shin Chang-Su
Принадлежит: Samsung SDI Co., Ltd.

A negative active material, a method of preparing the same, and a lithium battery including the negative active material are disclosed. The negative active material includes a silicon-based nanocore and a first amorphous carbonaceous coating layer that is formed of carbonized organic material and that is uniformly and continuously formed on a surface of the silicon-based nanocore, whereby irreversible capacity losses due to volumetric expansion/contraction caused when a lithium battery is charged and discharged are compensated and cycle lifetime characteristics are enhanced. 1. A negative active material comprising a secondary particle comprising agglomerated primary nanoparticles ,wherein the primary nanoparticles comprise:a silicon-based nanocore; anda first amorphous carbonaceous coating layer that is a continuous layer and is disposed on a surface of the silicon-based nanocore.2. The negative active material of claim 1 , wherein the primary nanoparticles have an average diameter in a range of about 100 to about 300 nm.3. The negative active material of claim 1 , wherein the silicon-based nanocore comprises one selected from the group consisting of Si claim 1 , SiOwhere 0 Подробнее

Номер записи: 44
04-04-2013 дата публикации

DISPLAY APPARATUS INCLUDING A PATTERN AND METHOD FOR GENERATING A

Номер: US20130082907A1
Автор: Choi Jeong-Seok, Jang Won-Dong, Kim Chang-Su, Koh Yeong-Jun, Lee Chul-Woo, LEE Jeong-Seok, Seo Seong-Min, Yun In-Kuk
Принадлежит:

A display apparatus is provided that includes a plurality of color filters corresponding to subpixels forming pixels of the display apparatus, and a black matrix formed among the plurality of color filters. The plurality of color filters includes a pattern indicating an absolute location of each pixel of the display apparatus. 1. A display apparatus , the apparatus comprising:a plurality of color filters corresponding to subpixels forming pixels of the display apparatus; anda black matrix formed among the plurality of color filters,wherein the plurality of color filters includes a pattern indicating an absolute location of each pixel of the display apparatus.2. The apparatus of claim 1 , wherein the pattern indicating the absolute location of each pixel is generated when a plurality of holes are formed in a region of the plurality of color filters corresponding to the subpixels forming the pixels.3. The apparatus of claim 2 , wherein the plurality of holes comprises:a dent hole indicating a reference for calculating an absolute location of a corresponding pixel; andposition holes for calculating a horizontal-axis coordinate value of the corresponding pixel and a vertical-axis coordinate value of the corresponding pixel.4. The apparatus of claim 3 , wherein the position holes are formed on points indicating values to be used for calculating the horizontal-axis coordinate value of the corresponding pixel and the vertical-axis coordinate value of the corresponding pixel in the region of the plurality of color filters.5. The apparatus of claim 4 , wherein the plurality of holes further comprises parity holes to be used for checking for errors of the position holes.6. The apparatus of claim 5 , wherein the parity holes are formed on points indicating values to be used for checking for errors of the points where the position holes are formed.7. The apparatus of claim 6 , wherein the values corresponding to the points where the plurality of holes are formed are encrypted ...

Подробнее
Номер записи: 45
11-04-2013 дата публикации

APPARATUS AND METHOD OF DETECTING AN INPUT POSITION WITH DISPLAY PATTERN RECOGNITION

Номер: US20130088425A1
Автор: Jang Won-Dong, Kim Chang-Su, KIM Po-Ra, Koh Yeong-Jun, Lee Chul-Woo, LEE Jeong-Seok, Park Se-Mi, Yun In-Kuk
Принадлежит:

An apparatus and method are provided for detecting an input position using display pattern recognition. The apparatus includes an effective pattern area extractor for receiving an image of a display screen captured by a camera and extracting an effective pattern area for pattern recognition from the captured image of the display screen; a pattern recognizer for detecting subpixels included in the effective pattern area and identifying a plurality of holes included in each of the subpixels; and a display coordinate calculator for detecting an input position based on points at which the plurality of holes included in the each of the subpixels are formed. 1. An apparatus for detecting an input position using display pattern recognition , the apparatus comprising:an effective pattern area extractor for receiving an image of a display screen captured by a camera and extracting an effective pattern area for pattern recognition from the captured image of the display screen;a pattern recognizer for detecting subpixels included in the effective pattern area and identifying a plurality of holes included in each of the subpixels; anda display coordinate calculator for detecting an input position based on points at which the plurality of holes included in the each of the subpixels are formed.2. The apparatus of claim 1 , wherein the effective pattern area extractor comprises:a rotation angle corrector for correcting the captured image by correcting a rotated angle between the captured image of the display screen and an actual image of the display screen;a black matrix detector for detecting a black matrix area from the corrected image of the display screen; anda warping unit for extracting the effective pattern area in a predetermined basic pattern block size to detect an arbitrary position using the black matrix area.3. The apparatus of claim 1 , wherein the pattern recognizer comprises:a subpixel detector for detecting the subpixels included in the effective pattern area;a ...

Подробнее
Номер записи: 46
11-04-2013 дата публикации

Negative Active Material and Lithium Battery Containing the Negative Active Material

Номер: US20130089783A1
Автор: Cho Yu-Jeong, Do Ui-Song, Kim Jae-Myung, Lee So-Ra, Lee Su-Kyung, Park Sang-Eun, Shin Chang-Su, Yoo Ha-Na
Принадлежит:

A negative active material and a lithium battery including the same are disclosed. Due to the inclusion of silicon nanowires formed on a spherical carbonaceous base material, the negative active material may increase the capacity and cycle lifespan characteristics of the lithium battery. 1. A negative active material comprising:a primary particle comprising a substantially spherical carbonaceous base material, the carbonaceous base material having a circularity of about 0.7 to about 1.0, andsilicon-based nanowires on the carbonaceous base material.2. The negative active material of claim 1 , wherein the circularity of the carbonaceous base material is about 0.8 to about 1.0.3. The negative active material of claim 1 , wherein the carbonaceous base material comprises pores and has a porosity of about 5 to about 30% based on a total volume of the carbonaceous base material.4. The negative active material of claim 1 , wherein the carbonaceous base material comprises a crystalline carbonaceous material.5. The negative active material of claim 4 , wherein a plane interval (d002) of a (002) X-ray diffraction plane of the carbonaceous base material is equal to or greater than 0.333 nm and less than 0.339 nm.6. The negative active material of claim 4 , wherein the crystalline carbonaceous material comprises at least one of natural graphite claim 4 , artificial graphite claim 4 , expandable graphite claim 4 , graphene claim 4 , carbon black claim 4 , or fullerene soot.7. The negative active material of claim 1 , wherein an average particle diameter of the carbonaceous base material is about 1 to about 30 μm.8. The negative active material of claim 1 , wherein the silicon-based nanowires comprise at least one of Si claim 1 , SiOx (0 Подробнее

Номер записи: 47
11-04-2013 дата публикации

NEGATIVE ACTIVE MATERIAL AND LITHIUM BATTERY CONTAINING THE NEGATIVE ACTIVE MATERIAL

Номер: US20130089784A1
Автор: Cho Yu-Jeong, Do Ui-Song, Kim Jae-Myung, Lee So-Ra, Lee Su-Kyung, Shin Chang-Su, Yoo Ha-Na
Принадлежит:

A negative active material and a lithium battery including the negative active material. The negative active material includes primary particles, each including: a crystalline carbonaceous core having a surface on which silicon-based nanowires are disposed; and an amorphous carbonaceous coating layer that is coated on the crystalline carbonaceous core so as not to expose at least a portion of the silicon-based nanowires. Due to the inclusion of the primary particles, an expansion ratio is controlled and conductivity is provided and thus, a formed lithium battery including the negative active material may have improved charge-discharge efficiency and cycle lifespan characteristics. 1. A negative active material comprising a primary particle , the primary particle comprising:a crystalline carbonaceous core with silicon-based nanowires on a surface thereof; andan amorphous carbonaceous coating layer coated on the crystalline carbonaceous core so as not to expose at least a portion of the silicon-based nanowires.2. The negative active material of claim 1 , wherein at least 50 vol % of the silicon-based nanowires is embedded in the amorphous carbonaceous coating layer.3. The negative active material of claim 1 , wherein a thickness of the amorphous carbonaceous coating layer is in a range of about 0.1 to about 10 μm.4. The negative active material of claim 1 , wherein a D/G ratio of the amorphous carbonaceous coating layer is 0.31 or more claim 1 , and wherein the D/G ratio is a ratio of a D (defect) band peak intensity area with respect to a G (graphite) band peak intensity area in a Raman spectrum.5. The negative active material of claim 1 , wherein the amorphous carbonaceous coating layer comprises an amorphous carbon selected from the group consisting of soft carbon (cold calcination carbon) claim 1 , hard carbon claim 1 , pitch carbide claim 1 , mesophase carbide claim 1 , calcined corks claim 1 , and combinations thereof.6. The negative active material of claim 1 , ...

Подробнее
Номер записи: 48
20-06-2013 дата публикации

Capacitive touch sensor and fabrication method thereof and capacitive touch panel

Номер: US20130155021A1
Автор: Hsiang-Wei YIN, Kuo-Chang Su, Ming-Kung Wu, Ping-Wen Huang
Принадлежит: Wintek China Technology Ltd, Wintek Corp

A capacitive touch sensor includes multiple first-axis traces, multiple second-axis traces, an insulation layer and multiple metal traces. Each first-axis trace includes multiple first touch-sensing pads and first connecting lines connected therebetween. Each second-axis trace includes multiple second touch-sensing pads and second connecting lines connected therebetween. At least one of the first connecting line and the second connecting line is a metal printing line.

Подробнее
Номер записи: 49
15-08-2013 дата публикации

Negative active material and lithium battery including negative active material

Номер: US20130209881A1
Автор: Beom-Kwon Kim, Chang-Su Shin, Jae-myung Kim, So-Ra Lee, Ui-Song Do
Принадлежит: Samsung SDI Co Ltd

A negative active material and a lithium battery including the negative active material. The negative active material includes a non-carbonaceous nanoparticle capable of doping or undoping lithium; and a crystalline carbonaceous nano-sheet, wherein at least one of the non-carbonaceous nanoparticle and the crystalline carbonaceous nano-sheet includes a first amorphous carbonaceous coating layer on its surface, and thus an electrical conductivity thereof is improved. In addition, a lithium battery including the negative active material has an improved efficiency and lifetime.

Подробнее
Номер записи: 50
09-01-2014 дата публикации

THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

Номер: US20140007933A1
Автор: Jeong Yong Soo, Jung Hyung Hwan, Kang Jae Wook, Kim Chang Su, Kim Dong Ho, Kwon Jung Dae, Lee Gun Hwan, Lee Sung Hun, LIM Keong Su, Nam Kee Seok, PARK Sang II, Park Sung Gyu, Ryu Seoung Yoon, Yun Jung Heum
Принадлежит: KOREA INSTITUTE OF MACHINERY & MATERIALS

Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO, WO, VO, NiO and CrO. 1. A thin film solar cell comprising:a substrate;a front electrode layer formed on the substrate;an oxide layer formed on the front electrode layer a light absorbing layer (instrinsic layer) formed on the oxide layer; anda back electrode layer formed on the light absorbing layer,{'sub': 3', '3', '2', '5', '3, 'wherein the oxide layer is formed of a material selected from MoO, WO, VO, NiO and CrO; and'}wherein the cell lacks a doping layer.2. The thin film solar cell of claim 1 , wherein the oxide layer has a thickness in range from 1 nm to 30 nm.3. The thin film solar cell of claim 1 , wherein the back electrode layer comprises:a first electrode layer formed on the light absorbing layer; and{'sub': 2', '2', '3', '2, 'a second electrode layer formed on the first electrode layer, wherein the first electrode layer is formed of a material selected from LiF, Liq, Cs, CsI, CsCl, ZrO, AlO, Al, Mg and SiO, and'}The second electrode layer is formed of a material selected from Al, Ag, Mg, Ca and Li.4. The thin film solar cell of claim 3 , wherein the first electrode layer is formed of LiF and the second electrode layer is formed of Al.5. The thin film solar cell of claim 3 , wherein the first electrode layer has a thickness in range from 0.1 nm to 5.0 nm.6. The thin film solar cell of claim 1 , wherein the substrate is a glass substrate coated with a fluorine tin oxide (FTO).7. The thin film solar cell of claim 1 , wherein the front ...

Подробнее
Номер записи: 51
09-01-2014 дата публикации

Thin Film Solar Cell and Method of Manufacturing the Same

Номер: US20140011314A1
Автор: Jeong Yong Soo, Jung Hyung Hwan, Kang Jae Wook, Kim Chang Su, Kim Dong Ho, Kwon Jung Dae, Lee Gun Hwan, Lee Sung Hun, Lim Koeng Su, Nam Kee Seok, PARK Sang Il, Park Sung Gyu, Ryu Seoung Yoon, Yun Jung Heum
Принадлежит: KOREA INSTITUTE OF MACHINERY & MATERIALS

Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO, WO, VO, NiO and CrO. 2. The method of claim 1 , wherein the back electrode layer includes the first electrode layer formed on the light absorbing layer and the second electrode layer formed on the first electrode layer claim 1 , and the oxide layer and the back electrode layer are formed using the thermal evaporation method claim 1 , andthe oxide layer is formed to have a thickness in range from 10 nm to 30 nm and the first electrode layer is formed to have a thickness in a range from 1.0 nm to 5.0 nm.3. The method of claim 1 , wherein the back electrode layer includes the first electrode layer formed on the light absorbing layer and the second electrode layer formed on the first electrode layer claim 1 , the oxide layer is formed using the sputtering process and the back electrode layer is formed using the thermal evaporation method claim 1 , andthe oxide layer is formed to have a thickness in range from 5 nm to 10 nm and the first electrode layer is formed to have a thickness in range from 1.0 nm to 5.0 nm. This is a divisional application of U.S. patent application Ser. No. 13/571,807, filed on Aug. 10, 2012. The priority application Ser. No. 13/571,807 claims priority to and the benefit of Korean Patent Application No. 10-2012-0073843 filed in the Korean Intellectual Property Office on Jul. 6, 2012, the entire contents of which are incorporated herein by reference.The present invention relates to a solar cell, and more particularly, to a thin film ...

Подробнее
Номер записи: 52
23-01-2014 дата публикации

Semiconductor package with single sided substrate design and manufacturing methods thereof

Номер: US20140021636A1
Автор: Bernd Karl Appelt, Chia-Cheng Chen, Kuang-Hsiung Chen, Ming Chiang LEE, Pao-Ming Hsieh, Shih-Fu Huang, Tzu-Hui Chen, Yuan-Chang Su
Принадлежит: Advanced Semiconductor Engineering Inc

A multilayer substrate includes a first outer conductive patterned layer, a first insulating layer exposing a portion of the first outer conductive patterned layer to define a first set of pads, a second outer conductive patterned layer, and a second insulating layer exposing a portion of the second outer conductive patterned layer to define a second set of pads. The multilayer substrate further includes inner layers each with an inner conductive patterned layer, multiple inner conductive posts formed adjacent to the inner conductive patterned layer, and an inner dielectric layer, where the inner conductive patterned layer and the inner conductive posts are embedded in the inner dielectric layer, and a top surface of each of the inner conductive posts is exposed from the inner dielectric layer.

Подробнее
Номер записи: 53
13-02-2014 дата публикации

COMPOSITE ANODE ACTIVE MATERIAL, ANODE AND LITHIUM BATTERY EACH INCLUDING THE COMPOSITE ANODE ACTIVE MATERIAL, AND METHOD OF PREPARING THE COMPOSITE ANODE ACTIVE MATERIAL

Номер: US20140045060A1
Автор: Cho Yu-Jeong, Do Ui-Song, Kim Jae-Myung, Lee So-Ra, Lee Su-Kyung, Park Sang-Eun, Shin Chang-Su
Принадлежит: Samsung SDI Co., Ltd.

In an aspect, a composite anode active material including a composite core; and a coating layer covering at least a region of the composite core, wherein the composite core comprises a carbonaceous substrate; and a nanostructure disposed on the substrate, and the coating layer includes a metal oxide; an anode and a lithium battery each including the composite anode active material; and a method of preparing the composite anode active material are provided. 1. A composite anode active material comprising:a composite core; anda coating layer covering at least a region of the composite core, wherein the composite core comprises a carbonaceous substrate; and a metal/metalloid nanostructure disposed on the substrate, and the coating layer comprises a metal oxide.2. The composite anode active material of claim 1 , wherein the metal in the metal oxide is at least one selected from among the elements of Groups 2 to 13 of the periodic table of elements.3. The composite anode active material of claim 1 , wherein the metal of the metal oxide is at least one selected from the group consisting of zirconium (Zr) claim 1 , nickel (Ni) claim 1 , cobalt (Co) claim 1 , manganese (Mn) claim 1 , boron (B) claim 1 , magnesium (Mg) claim 1 , calcium (Ca) claim 1 , strontium (Sr) claim 1 , barium (Ba) claim 1 , titanium (Ti) claim 1 , vanadium (V) claim 1 , iron (Fe) claim 1 , copper (Cu) claim 1 , and aluminum (Al).5. The composite anode active material of claim 1 , wherein the metal oxide comprises at least one selected from the group consisting of titanium oxide claim 1 , aluminum oxide claim 1 , chromium trioxide claim 1 , zinc oxide claim 1 , copper oxide claim 1 , magnesium oxide claim 1 , zirconium dioxide claim 1 , molybdenum trioxide claim 1 , vanadium pentoxide claim 1 , niobium pentoxide claim 1 , and tantalum pentoxide.6. The composite anode active material of claim 1 , wherein the metal oxide is inert with respect to lithium.7. The composite anode active material of claim 1 , ...

Подробнее
Номер записи: 54
20-02-2014 дата публикации

Composite anode active material, anode and lithium battery comprising the material, and method of preparing the same

Номер: US20140050984A1
Автор: Chang-Su Shin, Jae-myung Kim, Sang-Eun Park, So-Ra Lee, Su-Kyung Lee, Ui-Song Do, Yu-Jeong Cho
Принадлежит: Samsung SDI Co Ltd

A composite anode active material, an anode and a lithium battery each including the composite anode active material, and a method of preparing the composite anode active material. The composite anode active material includes a composite core, and a coating layer covering at least a region of the composite core, wherein the composite core includes a carbonaceous substrate and a metal/semi-metal nanostructure on the carbonaceous substrate, the coating layer is more predominant on the nanostructure than on the carbonaceous substrate, and the coating layer includes a metal oxide.

Подробнее
Номер записи: 55
20-03-2014 дата публикации

LITHIUM BATTERY

Номер: US20140079991A1
Автор: Cho Yu-Jeong, Do Ui-Song, Kim Jae-Myung, Lee So-Ra, Lee Su-Kyung, Park Sang-Eun, Shin Chang-Su
Принадлежит: Samsung SDI Co., Ltd.

Provided is a lithium battery including: a positive electrode, a negative electrode, and an organic electrolytic solution, wherein the negative electrode has a metal/metalloid nanostructure, and the organic electrolytic solution includes a lithium sulfonimide-based compound. 1. A lithium battery comprising:a positive electrode; a negative electrode; and an organic electrolytic solution, whereinthe negative electrode comprises a negative active material comprising a metal/metalloid nanostructure, andthe organic electrolytic solution comprises a lithium sulfonimide-based compound.2. The lithium battery of claim 1 , wherein the metal/metalloid nanostructure has at least one type of a structure selected from a nanowire claim 1 , a nanotube claim 1 , a nanobelt claim 1 , and a nanorod.3. The lithium battery of claim 1 , wherein the metal/metalloid nanostructure is a nanowire.4. The lithium battery of claim 1 , wherein the metal/metalloid nanostructure comprises at least one element selected from a Group 13 element claim 1 , a Group 14 element claim 1 , and a Group 15 element.5. The lithium battery of claim 1 , wherein the metal/metalloid nanostructure comprises at least one element selected from Si claim 1 , Ge and Sn.6. The lithium battery of claim 1 , wherein the nanostructure is a Si nanowire.7. The lithium battery of claim 1 , wherein the negative active material comprises a composite comprising a metal/metalloid nanostructure and a carbonaceous material.8. The lithium battery of claim 7 , wherein the composite comprises:the carbonaceous material; andthe metal/metalloid nanostructure disposed on the carbonaceous material.9. The lithium battery of claim 8 , wherein the nanostructure is a nanowire.10. The lithium battery of claim 8 , wherein the carbonaceous substrate is spherical or tabular.11. The lithium battery of claim 8 , wherein the spherical carbonaceous material has a circularity of about 0.7 to about 1.0.12. The lithium battery of claim 8 , wherein the ...

Подробнее
Номер записи: 56
20-03-2014 дата публикации

COMPOSITE ANODE ACTIVE MATERIAL, ANODE AND LITHIUM BATTERY INCLUDING THE SAME, AND METHOD OF PREPARING COMPOSITE ANODE ACTIVE MATERIAL

Номер: US20140079993A1
Автор: Do Ui-Song, Lee So-La, Shin Chang-Su
Принадлежит: Samsung SDI Co., Ltd.

In an aspect, a composite anode active material including particles, wherein the particles include: a first carbonaceous material that is substantially crystalline and includes at least one carbon nano-sheet; a non-carbonaceous material capable of intercalating and deintercalating lithium; and a second carbonaceous material that binds the first carbonaceous material and the non-carbonaceous material, wherein the particles have pores having a size of 50 nm or more is disclosed. 1. A composite anode active material comprising particles ,wherein the particles each comprise:a first carbonaceous material that is substantially crystalline and comprises at least one carbon nano-sheet on a portion of a surface;a non-carbonaceous material capable of intercalating and deintercalating lithium; anda second carbonaceous material that binds the first carbonaceous material and the non-carbonaceous material, andwherein the particles each comprise pores having a size of 50 nm or more.2. The composite anode active material of claim 1 , wherein a cross-section of the particles comprises a non-spherical pore.3. The composite anode active material of claim 1 , wherein the pores are formed on a surface of the particles.4. The composite anode active material of claim 1 , wherein the particles have an average diameter D50 of 10 μm or more.5. The composite anode active material of claim 1 , wherein the particles have an average diameter D50 ranging from about 10 μm to about 100 μm.6. The composite anode active material of claim 1 , wherein the particles are spherical or oval particles having an aspect ratio of 3 or less.7. The composite anode active material of claim 1 , wherein the first carbonaceous material and the non-carbonaceous material are dispersed in the particles.8. The composite anode active material of claim 1 , wherein an amount of the non-carbonaceous material is in a range of more than 0 wt % to about 50 wt % based on a total weight of the particles.9. The composite anode ...

Подробнее
Номер записи: 57
01-01-2015 дата публикации

Decoration plate and electronic apparatus having the same

Номер: US20150002980A1
Автор: Chih-Jung Teng, Chin-Liang Chen, Fu-Min Hsu, Kuo-Chang Su
Принадлежит: Dongguan Masstop Liquid Crystal Display Co Ltd, Wintek Corp

A decoration plate and an electronic apparatus having the same are provided. The decoration plate includes a cover plate, a conductive ring, an insulating layer, and a conductive element. The conductive ring is disposed on a surface of the cover plate. The insulating layer is disposed on the surface of the cover plate and covers the conductive ring, and the insulating layer has at least one opening. The conductive element is disposed in the opening.

Подробнее
Номер записи: 58
06-01-2022 дата публикации

ELECTROCONDUCTIVE PARTICLES AND SIGNAL-TRANSMITTING CONNECTOR HAVING SAME

Номер: US20220005626A1
Автор: KIM Bo Hyun, Oh Chang Su, Yoon Sung Ho
Принадлежит:

The purpose of the present disclosure is to provide electro-conductive particles and a signal-transmitting connector having same, wherein the electro-conductive particles are improved to prevent the phenomenon of irregular scrub between the electro-conductive particles and to have improved signal delivery characteristics. Electro-conductive particles according to the present disclosure are provided on a signal-transmitting connector having multiple electroconductive portions supported by an insulating portion made of an elastic insulating material to be spaced apart from each other such that the signal-transmitting connector can be connected to an electronic component and can transmit electric signals. 1. An electro-conductive particle provided in a signal transmitting connector in which a plurality of electro-conductive sections , which may be connected to an electronic component to transmit an electric signal , are supported to be spaced apart from each other by an insulating section formed of an elastic insulating material , the electro-conductive particle comprising:an electro-conductive particle body having one flat surface and the other flat surface disposed parallel to each other; anda toothed part having a plurality of electro-conductive protrusions protruding outward from an edge of the electro-conductive particle body, each of which having one end being placed at the same height as the one surface the electro-conductive particle body and the other end being placed at the same height as the other surface of the electro-conductive particle body, and a plurality of electro-conductive protrusions, each of which being provided between the electro-conductive protrusions,wherein the electro-conductive particle is disposed in the electro-conductive section to allow the toothed part to be engaged with and electrically connected to the toothed part of other electro-conductive particle in such a way that the electro-conductive particle protrusion is inserted into the ...

Подробнее
Номер записи: 59
07-01-2016 дата публикации

POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20160005842A1
Автор: JANG Chang Su, MO Kyu Hyun, PARK Jae Hoon, SONG In Hyuk
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A power semiconductor device may include a drift region including a base layer and a surface semiconductor layer disposed on the base layer and having a first conductivity type; a field insulating layer disposed on the base layer, embedded in the surface semiconductor layer, and including an opening portion; and a collector region disposed below the base layer and having a second conductivity type. The field insulating layer is formed in the drift region to limit movement of holes, whereby conduction loss of the power semiconductor device may be significantly decreased. 1. A power semiconductor device comprising:a drift region of a first conductivity type including a base layer and a surface semiconductor layer disposed on the base layer;a field insulating layer disposed on the base layer, embedded in the surface semiconductor layer, and including an opening portion;a body region of a second conductivity type disposed on an inner side of an upper portion of the surface semiconductor layer;an emitter region of the first conductivity type disposed on an inner side of an upper portion of the body region, and having an impurity concentration higher than that of the drift region; anda collector region of the second conductivity type disposed below the base layer.2. The power semiconductor device of claim 1 , wherein the base layer and the surface semiconductor layer abut each other in the opening portion.3. The power semiconductor device of claim 1 , wherein the body region is disposed so as to be spaced apart from the field insulating layer.4. The power semiconductor device of claim 1 , wherein a thickness of the surface semiconductor layer is adjusted according to a depth of the body region.5. The power semiconductor device of claim 1 , wherein a width of the opening portion is 1 μm or less.6. The power semiconductor device of claim 1 , further comprising trench gates disposed so as to penetrate from the body region into the surface semiconductor layer and including a ...

Подробнее
Номер записи: 60
20-01-2022 дата публикации

ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE

Номер: US20220020964A1
Автор: CHANG Su-Jin, LEE Sung-Rae, MIN Ju-Hun
Принадлежит:

The present disclosure relates to an organic light-emitting diode display device that comprises a first substrate on which first, second and third subpixels each including an emission area and a non-emission area are defined; first, second and third light-emitting diodes disposed in the first, second and third subpixels on the first substrate, respectively; a second substrate over the first, second and third light-emitting diodes; and a scattering pattern corresponding to the first subpixel and disposed over the first light-emitting diode or under the first substrate, wherein the first subpixel has an area reflectance higher than the second and third subpixels. 1. An organic light-emitting diode display device , comprising:a first substrate on which first, second, and third subpixels each including an emission area and a non-emission area are defined;first, second, and third light-emitting diodes disposed in the first, second, and third subpixels on the first substrate, respectively;a second substrate over the first, second, and third light-emitting diodes; anda scattering pattern corresponding to the first subpixel and disposed either over the first light-emitting diode or under the first substrate,wherein the first subpixel has an area reflectance higher than the second and third subpixels.2. The organic light-emitting diode display device of claim 1 , wherein the first claim 1 , second claim 1 , and third subpixels include red claim 1 , green claim 1 , and blue subpixels claim 1 , and the first subpixel is the green subpixel.3. The organic light-emitting diode display device of claim 1 , wherein the scattering pattern includes a transparent resin and a light diffusion material including a bead in the transparent resin.4. The organic light-emitting diode display device of claim 2 , wherein the scattering pattern is disposed over the first light-emitting diode and is a fine pattern formed on a surface of the second substrate.5. The organic light-emitting diode ...

Подробнее
Номер записи: 61
14-01-2016 дата публикации

POWER SEMICONDUCTOR DEVICE

Номер: US20160013268A1
Автор: JANG Chang Su, MO Kyu Hyun, PARK Jae Hoon, SEO Dong Soo, SONG In Hyuk
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A power semiconductor device may include a first conductivity type semiconductor substrate, a super-junction portion disposed on the first conductivity type semiconductor substrate and including a first conductivity type pillar and a second conductivity type pillar arranged in an alternating manner, and a three-dimensional (3D) gate portion disposed on the first conductivity type pillar. The 3D gate portion is disposed on the first conductivity type pillar to reduce the widths of the first and second conductivity type pillars, thereby effectively reducing a device size. 1. A power semiconductor device comprising:a first conductivity type semiconductor substrate;a super-junction portion disposed on the first conductivity type semiconductor substrate and including a first conductivity type pillar and a second conductivity type pillar arranged in an alternating manner; anda three-dimensional (3D) gate portion disposed on the first conductivity type pillar.2. The power semiconductor device of claim 1 , wherein the 3D gate portion includes:a gate disposed on the first conductivity type pillar;a second conductivity type first semiconductor region disposed on both side surfaces of the gate; anda first conductivity type second semiconductor region disposed on the first semiconductor region.3. The power semiconductor device of claim 1 , wherein the 3D gate portion has a width equal to or less than 1 μm.4. The power semiconductor device of claim 1 , wherein the first conductivity type pillar and the second conductivity type pillar have a width of 6 to 8 μm.5. The power semiconductor device of claim 1 , wherein the 3D gate portions are longitudinally disposed in one direction on the first conductivity type pillar.6. The power semiconductor device of claim 1 , wherein the 3D gate portions are spaced apart from each other by a predetermined interval in a direction perpendicular with respect to a width direction claim 1 , on the first conductivity type pillar.7. The power ...

Подробнее
Номер записи: 62
19-01-2017 дата публикации

IMAGE DECODING METHOD AND DEVICE THEREFOR, AND IMAGE ENCODING METHOD AND DEVICE THEREFOR

Номер: US20170019672A1
Автор: HAN Chang-su, KIM Jae-moon, KIM Sung-dae, YOO Ki-won
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Disclosed is a video data decoding method comprising receiving a bitsream comprising encoded image information; decoding an image based on the encoded image information and obtaining luma data allocated to luma channels comprising a plurality of channels and chroma data allocated to a chroma channel comprising one channel from data generated by decoding the image; merging the obtained luma data as luma data having one component; splitting the obtained chroma data into chroma data having a plurality of components; and reconstructing the image based on the luma data having one component generated by merging the obtained luma data and the split chroma data having the plurality of components. 1. A video data encoding method comprising:splitting luma data having one component included in image data and allocating the luma data to luma channels comprising a plurality of channels;allocating chroma data having a plurality of components included in the image data to a chroma channel comprising one channel; andencoding the image data based on the luma data allocated to the luma channels and the chroma data allocated to the chroma channel.2. The video data encoding method of claim 1 , wherein the luma channels comprise two channels claim 1 , andwherein the allocating of the luma data to luma channels comprises:splitting the luma data into two pieces of luma data in a spatial domain; andallocating the split luma data to the two channels.3. The video data encoding method of claim 1 , wherein the luma channels comprise two channels claim 1 , andwherein the allocating of the luma data to luma channels comprises: splitting the luma data having one component into two pieces of luma data in a frequency region; andallocating the split luma data to the two channels.4. The video data encoding method of claim 3 , wherein the splitting of the luma data having one component into two pieces of luma data in the frequency region comprises:obtaining a sample value of a high frequency region; ...

Подробнее
Номер записи: 63
17-04-2014 дата публикации

NEGATIVE ACTIVE MATERIAL, METHOD OF MANUFACTURING THE SAME, AND LITHIUM BATTERY INCLUDING THE NEGATIVE ACTIVE MATERIAL

Номер: US20140106230A1
Автор: Do Ui-Song, Kim Beom-Kwon, Kim Jae-Myung, Lee So-Ra, Shin Chang-Su
Принадлежит: Samsung SDI Co., Ltd.

In an aspect, a negative active material, a method of preparing the negative active material, and a lithium battery including the negative active material are provided. The method of preparing the negative active material may increase pulverizing efficiency in pulverizing a silicon-based bulky particle into a nano-size silicon-based primary particle and decrease a capacity loss of the obtained negative active material. The nano-size negative active material has excellent crystalline characteristics, high capacity, and high initial efficiency, due to a decrease in surface oxidation and surface damage. 1. A negative active material comprising a silicon-based primary particle that is composed of crystalline silicon having a Raman shift range of about 500 to about 510 cmmeasured by Raman spectroscopy and that has an average particle size of about 100 to about 500 nm.2. The negative active material of claim 1 , wherein the silicon-based primary particles comprise a material selected from Si claim 1 , SiOx (0 Подробнее

Номер записи: 64
01-05-2014 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20140117374A1
Автор: JANG Chang Su, PARK Jae Hoon, SEO Dong Soo, SONG In Hyuk, UM Kee Ju
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Disclosed herein is a semiconductor device including: a base substrate; a first nitride semiconductor layer formed on the base substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer; a cathode electrode formed on one side of the second nitride semiconductor layer; an anode electrode having one end and the other end, one end being recessed at the other side of the second nitride semiconductor layer up to a predetermined depth, and the other end being spaced apart from the cathode electrode and formed to be extended up to an upper portion of the cathode electrode; and an insulating film formed on the second nitride semiconductor layer between the anode electrode and the cathode electrode so as to cover the cathode electrode. 1. A semiconductor device comprising:a base substrate;a first nitride semiconductor layer formed on the base substrate;a second nitride semiconductor layer formed on the first nitride semiconductor layer;a cathode electrode formed on one side of the second nitride semiconductor layer;an anode electrode having one end and the other end, one end being recessed at the other side of the second nitride semiconductor layer up to a predetermined depth, and the other end being spaced to apart from the cathode electrode and formed to be extended up to an upper portion of the cathode electrode; andan insulating film formed on the second nitride semiconductor layer between the anode electrode and the cathode electrode so as to cover the cathode electrode.2. The semiconductor device as set forth in claim 1 , wherein the cathode electrode is recessed into the second nitride semiconductor layer up to a predetermined depth.3. The semiconductor device as set forth in claim 1 , wherein the insulating film includes:a first part contacting the second nitride semiconductor layer; anda second part contacting the cathode electrode,the second part having a thickness thicker than that of the first part.4. The semiconductor device ...

Подробнее
Номер записи: 65
01-05-2014 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20140117405A1
Автор: JANG Chang Su, PARK Jaehoon, SEO Dong Soo, SONG In Hyuk, UM Kee Ju
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

There is provided a semiconductor device including: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type and formed on one surface of the first semiconductor region; a third semiconductor region having a first conductivity type and formed on one surface of the second semiconductor region; a gate electrode formed in a trench penetrating through the second semiconductor region and the third semiconductor region to reach an interior of the first semiconductor region; and a hole injection unit formed between the gate electrode and the first semiconductor region. 1. A semiconductor device comprising:a first semiconductor region having a first conductivity type;a second semiconductor region having a second conductivity type and formed on one surface of the first semiconductor region;a third semiconductor region having a first conductivity type and formed on one surface of the second semiconductor region;a gate electrode formed in a trench penetrating through the second semiconductor region and the third semiconductor region to reach an interior of the first semiconductor region; anda hole injection unit formed between the gate electrode and the first semiconductor region.2. The semiconductor device of claim 1 , wherein the hole injection unit allows holes to be injected into the first semiconductor region when a gate voltage is applied.3. The semiconductor device of claim 1 , wherein the hole injection unit forms a heterojunction with the first semiconductor region.4. The semiconductor device of claim 1 , further comprising an insulating layer formed between the gate electrode and first to third semiconductor regions.5. The semiconductor device of claim 1 , wherein the first semiconductor region includes a first conductivity type buffer layer having a higher impurity concentration than that of the first semiconductor region.6. The semiconductor device of claim 1 , wherein the first semiconductor ...

Подробнее
Номер записи: 66
04-02-2016 дата публикации

METHOD AND APPARATUS FOR CORRECTING IMAGE

Номер: US20160035069A1
Автор: HAN Chang-su, LIM Il-soon, MIN Byung-Seok, PARK Hyung-jun, PARK Jong-Hyun, PARK Seung-ho
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

An image correction method includes: obtaining information regarding at least one of brightness and colors of pixels constituting an input image, the input image comprising a plurality of regions classified according to whether the at least one of the brightness and the colors of the pixels are substantially uniformly distributed in a corresponding region; determining a weight with respect to at least one pixel based on the obtained information; and correcting the input image with respect to the at least one pixel based on the determined weight. 1. An image correction method comprising:obtaining information regarding at least one of brightness and colors of pixels constituting an input image, the input image comprising a plurality of regions classified according to whether the at least one of the brightness and the colors of the pixels are substantially uniformly distributed in a corresponding region;determining a weight with respect to at least one pixel of the input image based on the obtained information; andcorrecting the input image with respect to the at least one pixel based on the determined weight.2. The image correction method of claim 1 , wherein the determining the weight comprises:dividing the input image into first blocks respectively having a first size and determining a higher resolution weight with respect to the at least one pixel by using a first block including the at least one pixel;dividing the input image into second blocks respectively having a second size greater than the first size and determining a lower resolution weight with respect to the at least one pixel by using a second block including the at least one pixel; anddetermining the weight with respect to the at least one pixel based on the higher resolution weight and the lower resolution weight.3. The image correction method of claim 2 , wherein the determining the weight based on the higher resolution weight and the lower resolution weight comprises: determining the weight based on a ...

Подробнее
Номер записи: 67
01-02-2018 дата публикации

MULTILAYER CAPACITOR AND BOARD HAVING THE SAME

Номер: US20180035545A1
Автор: Joo Jin Kyung, Kim Chang Su, LEE Ho Jun, LEE Kyo Kwang
Принадлежит:

A multilayer capacitor includes a capacitor body including dielectric layers and a plurality of first and second internal electrodes alternately disposed with one of the dielectric layers interposed between each pair of adjacent first and second internal electrodes. First and second via electrodes penetrate through the plurality of second internal electrodes to thereby be exposed to a first surface of the capacitor body, and are disposed to be spaced apart from each other. First and second external electrodes are disposed on two side surfaces of the capacitor body and connected to opposing ends of the first internal electrodes, respectively. Third and fourth external electrodes are disposed on the first surface of the capacitor body to be spaced apart from each other, and are connected to end portions of the first and second via electrodes, respectively. 1. A multilayer capacitor comprising:a capacitor body including dielectric layers and a plurality of first and second internal electrodes alternately disposed with one of the dielectric layers interposed between each pair of adjacent first and second internal electrodes, and having first and second surfaces opposing each other, third and fourth surfaces connected to the first and second surfaces and opposing each other, and fifth and sixth surfaces connected to the first and second surfaces and the third and fourth surfaces and opposing each other, opposing ends of the first internal electrodes being exposed to the third and fourth surfaces, respectively;first and second via electrodes penetrating through the plurality of second internal electrodes to thereby be exposed to the first surface of the capacitor body, and disposed to be spaced apart from each other;first and second external electrodes disposed on the third and fourth surfaces of the capacitor body and respectively connected to opposing ends of the first internal electrodes; andthird and fourth external electrodes disposed on the first surface of the ...

Подробнее
Номер записи: 68
24-02-2022 дата публикации

TEST SOCKET AND TEST APPARATUS HAVING THE SAME

Номер: US20220057433A1
Автор: Oh Chang Su
Принадлежит:

The present disclosure discloses a test socket including an inelastic insulating housing formed of an inelastic insulating material having a plurality of housing holes, and a plurality of electro-conductive parts comprising electro-conductive particles in an elastic insulating material, the electro-conductive parts including an electro-conductive part body having a lower end portion to be connected to a signal electrode of the tester, an upper end portion to be connected to the terminal of the device under inspection, and an electro-conductive part bump connected to the electro-conductive part body to protrude from one or both of an upper and lower surface of the inelastic insulating housing. 1. A test socket provided in a test apparatus in which a device under inspection having a terminal is connected to a tester , which generates a test signal , for testing the device under inspection , the test socket comprising:an inelastic insulating housing formed of an inelastic insulating material and provided with a plurality of housing holes formed therein to pass therethrough in a thickness direction thereof;{'claim-text': ['an electro-conductive part body having a lower end portion to be connected to a signal electrode of the tester placed below the inelastic insulating housing and an upper end portion disposed in the housing hole to be connected to the terminal of the device under inspection placed on the inelastic insulating housing; and', 'an electro-conductive part lower bump connected to the electro-conductive part body to protrude from a lower surface of the inelastic insulating housing; and'], '#text': 'a plurality of electro-conductive parts formed to have a configuration in which a plurality of electro-conductive particles are contained in an elastic insulating material, each of the electro-conductive parts comprising:'}a lower compression-controlling sheet attached to the lower surface of the inelastic insulating housing and having one or more through holes ...

Подробнее
Номер записи: 69
03-03-2022 дата публикации

Dustproof and Antibiotic Mask Using Metal Microfilament Fabric

Номер: US20220061420A1
Автор: Chang Su Lee
Принадлежит: Individual

A non-woven cloth mask including a metal filament having a diameter of 20-100 μm is manufactured from a metal selected from the group consisting of silver, silver alloy, copper, or copper alloy. The metal microfiber cloth of a plain weave structure is woven by using the metal filament as a weft yarn and a warp. The metal microfiber cloth is of a plain weave fabric woven from a metal filament having a diameter 20 to 100 μm manufactured from a metal selected from the group consisting of silver, silver alloy, copper, or copper alloy. The metal microfiber cloth is preferably 50 to 70% of the area of the front cover, and fixed to the front cover by stitching or high-frequency heating.

Подробнее
Номер записи: 70
25-02-2016 дата публикации

VIRUS-MICROBEAD COMPLEX AND USE THEREOF

Номер: US20160054314A1
Автор: CHUNG Taek Dong, Hwang Inseong, Jeon Chang Su
Принадлежит:

The present invention relates to a virus-microbead complex including a microbead and a virus layer, in which linear viruses are bound individually to the surface of the microbead, and an immunoassay kit including the same. 1. A virus-microbead complex comprising a microbead and a virus layer , having one end of each linear virus bound to the surface of the microbead.2. The complex of claim 1 , wherein each individual linear virus in the virus layer are independently bound to the surface of the microbead claim 1 , separated from one another.3. The complex of claim 2 , wherein at least two capturers capable of capturing an analyte are bound to the exposed long axis surface of the virus in the virus layer.4. The complex of claim 3 , wherein the capturer is selected from the group consisting of an antibody claim 3 , an antigen claim 3 , a ligand claim 3 , and a receptor.5. The complex of claim 1 , wherein the microbead is made of gold or coated with a thin gold film.6. The complex of claim 1 , wherein a self-assembled monolayer (SAM) preventing a non-specific binding is further formed on the surface of the microbead.7. The complex of claim 6 , wherein the SAM is composed of molecules containing polyethylene glycol.8. The complex of claim 7 , wherein the molecule is carboxyl-terminated hexa(ethylene glycol)undecane thiol.9. The complex of claim 1 , wherein the binding between the microbead and the linear viruses is mediated by the binding between streptavidin (SAV) and biotin.10. The complex of claim 1 , wherein the linear virus is fd or M13 phage.11. The complex of claim 1 , wherein biotin or streptavidin is bound to a protein located at one end of the virus claim 1 , or the virus is gene-manipulated to express a fusion protein of biotin or streptavidin and a virus protein.12. The complex of claim 11 , wherein the protein located at one end of the virus is pIII claim 11 , pVI claim 11 , pVII claim 11 , pIX claim 11 , or a combination thereof.13. The complex of claim 1 , ...

Подробнее
Номер записи: 71
21-02-2019 дата публикации

Method for controlling acupressure force and body scan in real-time

Номер: US20190053979A1
Автор: Chang Su Park, Han Rim Song, Hui Won Choi, Keun Young Paek, Sang Cheol Han
Принадлежит: Ceragem Co Ltd

The present invention relates to a method for controlling an acupressure force and a body scan in real-time and, more specifically, the method comprises the steps of: (a) setting a reference vertical height for each horizontal position of an acupressure part, and setting a target acupressure force within the range of the reference vertical height; (b) calculating a current measurement acupressure force by means of a user's load measurement data applied to a load cell; and (c) comparing the target acupressure force with the current measurement acupressure force so as to control the vertical height of the acupressure part. That is, the present invention presents a method for controlling a body scan in real-time, the method enabling: an inflection point of a driving current measurement value applied to a horizontal driving motor to be measured during the horizontal driving of an acupressure part in an initial massage process, so as to reflect, on an acupressure force correction value, a deviation between a vertical position of the acupressure part corresponding to the inflection point and a reference vertical position, for each horizontal position, stored in a database, thereby calculating a new target acupressure force; and the new target acupressure force to be reflected in acupressure control such that an acupressure force suitable for a user can be provided during a massage.

Подробнее
Номер записи: 72
22-05-2014 дата публикации

INSULATED GATE BIPOLAR TRANSISTOR

Номер: US20140138736A1
Автор: JANG Chang Su, PARK Jaehoon, SEO Dong Soo, SONG In Hyuk, UM Kee Ju
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

There is provided an insulated gate bipolar transistor including: a first semiconductor area of a first conductivity type; a second semiconductor area of a second conductivity type formed on one surface of the first semiconductor area; third semiconductor areas of the first conductivity type continuously formed in a length direction on one surface of the second semiconductor area; a plurality of trenches formed between the third semiconductor areas, extending to an inside of the second semiconductor area, and being continuous in the length direction; a fourth semiconductor area of the second conductivity type formed on one surface of the third semiconductor areas, insulation layers formed inside the trenches; gate electrodes buried inside the insulation layers; and a barrier layer formed in at least one of locations corresponding to the third semiconductor areas inside the second semiconductor area. 1. An insulated gate bipolar transistor comprising:a first semiconductor area of a first conductivity type;a second semiconductor area of a second conductivity type formed on one surface of the first semiconductor area;third semiconductor areas of the first conductivity type continuously formed in a length direction on one surface of the second semiconductor area;a plurality of trenches formed between the third semiconductor areas, extending to an inside of the second semiconductor area, and being continuous in the length direction;a fourth semiconductor area of the second conductivity type formed on one surface of the third semiconductor areas;insulation layers formed inside the trenches;gate electrodes buried inside the insulation layers; anda barrier layer formed in at least one of locations corresponding to the third semiconductor areas inside the second semiconductor area,wherein the barrier layer is an oxide.2. The insulated gate bipolar transistor of claim 1 , wherein the barrier layer is formed between an area corresponding to 5 μm apart from lower surfaces of ...

Подробнее
Номер записи: 73
02-03-2017 дата публикации

MULTILAYER CERAMIC CAPACITOR AND BOARD HAVING THE SAME

Номер: US20170062133A1
Автор: AHN Young Ghyu, Kim Chang Su, KIM Jin, LEE Kyo Kwang
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A multilayer ceramic capacitor includes a ceramic body having a plurality of dielectric layers stacked therein, and first and second internal electrodes alternately disposed with at least one among the plurality of dielectric layers interposed therebetween. The first internal electrodes include first and second lead portions exposed to a mounting surface of the ceramic body, and disposed to be spaced apart from each other in a length direction of the ceramic body. The second internal electrodes include a third lead portion exposed to the mounting surface of the ceramic body, and disposed between the first and second lead portions in the length direction of the ceramic body. 1. A multilayer ceramic capacitor comprising:a ceramic body having a plurality of dielectric layers stacked therein, and including an active region including first and second internal electrodes alternately disposed with at least one among the plurality of dielectric layers interposed therebetween, the first and second internal electrodes exposed to a second surface of the ceramic body opposing a mounting surface of the ceramic body, wherein the first internal electrodes include first and second lead portions to be extended and exposed to a mounting surface of the ceramic body, and disposed to be spaced apart from each other in a length direction of the ceramic body; and the second internal electrodes include a third lead portion to be extended and exposed to the mounting surface of the ceramic body, and disposed between the first and second lead portions in the length direction of the ceramic body;first and second external electrodes disposed on the mounting surface of the ceramic body to be spaced apart from each other in the length direction of the ceramic body, and connected to the first and second lead portions, respectively;a third external electrode disposed between the first and second external electrodes on the mounting surface of the ceramic body, and connected to the third lead portion ...

Подробнее
Номер записи: 74
08-03-2018 дата публикации

Culture scaffold for enhancing differentiation of osteoblast using pattern

Номер: US20180066230A1
Автор: Kim Bokyung, Kim Chang Su, KIM Hang-Rae, Kim Jin-Hee, Kim Youn Sang
Принадлежит:

The present disclosure relates to a culture scaffold for promoting differentiation from stem cells or precursor cells into osteoblasts, in which the culture scaffold includes a structure composed of a ridge and a groove, a kit using the culture scaffold, and a method for differentiating stem cells or precursor cells into osteoblasts. The culture scaffold of the present disclosure has an optimal pattern depending on the type of stem cells or precursor cells, thereby improving the osteoblast differentiation potency. In particular, it has a feature of showing excellent osteoblast differentiation potency even if only a small amount of supplementary factors inducing osteoblast differentiation is added. Furthermore, since the osteoblast differentiation potency is not greatly influenced by the change in cell density, it is possible to induce differentiation into osteoblasts without being influenced by the inflammatory environment formed by the inflammatory factors that increase upon cell differentiation. Thus, there is an advantage in that the differentiation efficiency into osteoblasts is high. Accordingly, the culture scaffold of the present disclosure having excellent bone regeneration ability can be utilized in various biomedical and medical fields such as dental implants, artificial joints and trauma fixation devices. 1. A culture scaffold comprising a ridge and a groove , wherein a width of the ridge is from 0.1 to 5 μm and a width of the groove is from 0.5 to 7 μm , wherein the culture scaffold promotes differentiation of stem cells or precursor cells into osteoblasts.2. The culture scaffold according to claim 1 , wherein the culture scaffold promotes differentiation of stem cells into osteoblasts claim 1 , wherein the stem cells are derived from one or more tissues selected from the group consisting of: bone marrow claim 1 , fat claim 1 , muscle; nerve; skin claim 1 , tooth claim 1 , dental tissue claim 1 , blood claim 1 , cord blood claim 1 , liver claim 1 , ...

Подробнее
Номер записи: 75
29-05-2014 дата публикации

POWER SEMICONDUCTOR DEVICE

Номер: US20140145291A1
Автор: JANG Chang Su, PARK Jae Hoon, SEO Dong Soo, SONG In Hyuk, UM Kee Ju
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Disclosed herein is a power semiconductor device. The power semiconductor device includes a second conductive type first junction termination extension (JTE) layer that is formed so as to be in contact with one side of the second conductive type well layer, a second conductive type second JTE layer that is formed on the same line as the second conductive type first JTE layer, and is formed so as to be spaced apart from the second conductive type first JTE layer in a length direction of the substrate, and a poly silicon layer that is formed so as to be in contact with the second conductive type well layer and an upper portion of the second conductive type first JTE layer. 1. A power semiconductor device comprising:a first conductive type drift layer that includes one surface and the other surface, and is divided into an active region, a connection region, and a termination region;a second conductive type semiconductor substrate that is formed on the other surface of the first conductive type drift layer;a second conductive type well layer that is formed with a predetermined depth in a thickness direction from the one surface of the first conductive type drift layer, and formed in the active region;a second conductive type first junction termination extension (JTE) layer that is formed so as to be in contact with one side of the second conductive type well layer;a second conductive type second JTE layer that is formed on the same line as the second conductive type first JTE layer, and is formed so as to be spaced apart from the second conductive type first JTE layer in a length direction of the substrate; anda poly silicon layer that is formed so as to be in contact with the second conductive type well layer and an upper portion of the second conductive type first JTE layer.2. The power semiconductor device as set forth in claim 1 , wherein the second conductive type first JTE layer and the second conductive type second JTE layer have a concentration lower than the ...

Подробнее
Номер записи: 76
12-03-2015 дата публикации

NEGATIVE ACTIVE MATERIAL AND LITHIUM BATTERY CONTAINING THE NEGATIVE ACTIVE MATERIAL

Номер: US20150072233A1
Автор: Do Ui-Song, Kim Jae-Myung, Lee So-Ra, Meng Xian-Hui, Park Sang-Eun, Shin Chang-Su
Принадлежит:

A negative active material and a lithium battery including the same are disclosed. The negative active material includes a primary particle including a silicon nanowire formed on a non-carbonaceous conductive core to increase the capacity and cycle lifespan properties of the lithium battery. 1. A negative active material comprising a primary particle , wherein the primary particle comprises:a non-carbonaceous conductive core; anda silicon-based nanowire disposed on the non-carbonaceous conductive core.2. The negative active material of claim 1 , wherein the non-carbonaceous conductive core comprises at least one selected from copper (Cu) claim 1 , nickel (Ni) claim 1 , cobalt (Co) claim 1 , iron (Fe) claim 1 , manganese (Mn) claim 1 , molybdenum (Mo) claim 1 , titanium (Ti) claim 1 , silicon (Si) claim 1 , and an alloy thereof.3. The negative active material of claim 1 , wherein the non-carbonaceous conductive core has a spherical powder form.4. The negative active material of claim 1 , wherein an average diameter of the non-carbonaceous conductive core is in the range of about 1 μm to about 30 μm.5. The negative active material of claim 1 , wherein;the silicon-based nanowire comprises at least one selected from Si, SiOx (0 Подробнее

Номер записи: 77
29-05-2014 дата публикации

COMPOSITE ANODE ACTIVE MATERIAL, ANODE AND LITHIUM BATTERY CONTAINING THE SAME, AND METHOD OF PREPARING THE COMPOSITE ANODE ACTIVE MATERIAL

Номер: US20140147741A1
Автор: Cho Yu-Jeong, Do Ui-Song, Kim Jae-Myung, Lee So-Ra, Lee Su-Kyung, Park Sang-Eun, Shin Chang-Su, Yoo Ha-Na
Принадлежит: Samsung SDI Co., Ltd.

In an aspect, a composite anode active material including: a porous particles, said porous particles including: a plurality of composite nanostructures; and a first carbonaceous material binding the composite nanostructures, wherein the porous particles have pores within the particle, and wherein the composite nanostructures include a crystalline second carbonaceous material substrate including at least one carbon nano-sheet, and a plurality of metal nanowires arranged at intervals on the crystalline second carbonaceous material substrate is disclosed. 1. A composite anode active material comprising porous particles:said porous particles each comprising:a plurality of composite nanostructures; anda first carbonaceous material binding the composite nanostructures,wherein the porous particles have pores within the particles, andwherein the composite nanostructures comprise a crystalline second carbonaceous material substrate including at least one carbon nano-sheet, and a plurality of metal nanowires arranged at intervals on the crystalline second carbonaceous material substrate.2. The composite anode active material of claim 1 , wherein the plurality of metal nanowires extend away from a surface of the crystalline second carbonaceous material substrate.3. The composite anode active material of claim 1 , wherein the metal nanowires comprises a metal selected from the group consisting of silicon (Si) claim 1 , germanium (Ge) claim 1 , tin (Sn) claim 1 , lead (Pb) claim 1 , aluminum (Al) claim 1 , and an alloy thereof.4. The composite anode active material of claim 1 , wherein the metal nanowires have a diameter of from about 5 nm to about 200 nm.5. The composite anode active material of claim 1 , wherein the porous particles have a pore size of about 50 nm or greater.6. The composite anode active material of claim 1 , wherein the porous particles have an irregular pore shape.7. The composite anode active material of claim 1 , wherein the porous particle have a tap ...

Подробнее
Номер записи: 78
28-02-2019 дата публикации

Semiconductor device package and a method of manufacturing the same

Номер: US20190067211A1
Автор: Chih Cheng Lee, Yuan-Chang Su
Принадлежит: Advanced Semiconductor Engineering Inc

A substrate for packaging a semiconductor device is disclosed. The substrate includes a first dielectric layer having a first surface and a second surface opposite to the first surface, a first patterned conductive layer adjacent to the first surface of the first dielectric layer, and a second patterned conductive layer adjacent to the second surface of the first dielectric layer. The first dielectric layer includes a first portion adjacent to the first surface, a second portion adjacent to the second surface, and a reinforcement structure between the first portion and the second portion. A thickness of the first portion of the first dielectric layer is different from a thickness of the second portion of the first dielectric layer.

Подробнее
Номер записи: 79
19-03-2015 дата публикации

POWER SEMICONDUCTOR DEVICE

Номер: US20150076652A1
Автор: JANG Chang Su, PARK Jaehoon, SEO Dong Soo, SONG In Hyuk, UM Kee Ju
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

There is provided a power semiconductor device, including: a first semiconductor layer of a first conductive type having a thickness of t1 so as to withstand a reverse voltage of 600V; and a second semiconductor layer of a second conductive type formed inside an upper portion of the first semiconductor layer and having a thickness of t2, wherein t1/t2 is 15 to 18. 1. A power semiconductor device , comprising:a first semiconductor layer of a first conductive type, having a thickness of t1 so as to withstand a reverse voltage of 600V; anda second semiconductor layer of a second conductive type, formed inside an upper portion of the first semiconductor layer and having a thickness of t2,wherein t1/t2 is 15 to 18.2. The power semiconductor device of claim 1 , wherein the t1 is 60 μm to 70 μm.3. The power semiconductor device of claim 1 , wherein the t2 is 3.34 μm to 4.67 μm.4. The power semiconductor device of claim 1 , further comprising a third semiconductor layer of the second conductive type claim 1 , formed inside an upper portion of the second semiconductor layer and having an impurity concentration higher than that of the second semiconductor layer.5. The power semiconductor device of claim 4 , wherein when a thickness of the third semiconductor layer is defined as t3 claim 4 , t2/t3 is 2.5 to 4.5.6. The power semiconductor device of claim 4 , wherein the t3 is 0.75 μm to 1.86 μm.7. The power semiconductor device of claim 1 , further comprising a fourth semiconductor region of the first conductive type claim 1 , formed on a lower portion of the first semiconductor layer and having an impurity concentration higher than that of the first semiconductor layer.8. The power semiconductor device of claim 1 , further comprising:an anode metal layer formed on an upper portion of the second semiconductor layer; anda cathode metal layer formed on a lower portion of the first semiconductor layer.9. A power semiconductor device claim 1 , comprising:a first semiconductor layer ...

Подробнее
Номер записи: 80
16-03-2017 дата публикации

Fets and methods of forming fets

Номер: US20170076973A1
Автор: Che-Hui Lee, Chien-Chang Su, Chien-I Kuo, Chii-Horng Li, Heng-Wen Ting, Jung-Chi Tai, Lilly SU, Yen-Ru LEE, Ying-Wei Li
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.

Подробнее
Номер записи: 81
12-06-2014 дата публикации

POWER SEMICONDUCTOR DEVICE

Номер: US20140159105A1
Автор: JANG Chang Su, PARK Jae Hoon, SEO Dong Soo, SONG In Hyuk, UM Kee Ju
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Disclosed herein is a power semiconductor device, including: a drift layer formed on the first surface of the semiconductor substrate, a well layer of a first conductive type, formed on the drift layer, a trench formed to reach the drift layer through the well layer, a first electrode formed in the trench, a second conductive type of second electrode region formed on the well layer, including a first region contacting the trench in a perpendicular direction and a second region spaced apart from the trench in a parallel direction and being perpendicular to the first region, a first conductive type of second electrode region formed to contact a side surface of the second conductive type of second electrode region, and a second electrode formed on the well layer and electrically connected to the second conductive type of second electrode region and the first conductive type of second electrode region. 1. A power semiconductor device comprising:a semiconductor substrate of a first conductive type, having a first surface and a second surface;a drift layer of a second conductive type, formed on the first surface of the semiconductor substrate;a well layer of a first conductive type, formed on the drift layer;a trench formed to reach the drift layer through the well layer in a thickness direction;a first electrode formed in the trench;a second conductive type of a second electrode region selectively formed on the well layer, including a first region contacting the trench in a perpendicular direction and a second region spaced apart from the trench in a parallel direction and being perpendicular to the first region, and having a higher concentration than the drift layer;a first conductive type of a second electrode region formed on the well layer so as to contact a side surface of the second conductive type of second electrode region and having a higher concentration than the well layer; anda second electrode formed on the well layer and electrically connected to the second ...

Подробнее
Номер записи: 82
12-06-2014 дата публикации

Power semiconductor device and method for manufacturing the same

Номер: US20140159106A1
Автор: Chang Su Jang, Dong Soo Seo, In Hyuk Song, JaeHoon PARK, Kee Ju Um
Принадлежит: Samsung Electro Mechanics Co Ltd

There is provided a power semiconductor device, including: a first conductive type drift layer, a second conductive type termination layer formed on an upper portion of an edge of the drift layer, and a high concentration first conductive type channel stop layer formed on a side surface of the edge of the drift layer.

Подробнее
Номер записи: 83
31-03-2022 дата публикации

BIOIMPEDANCE MEASUREMENT DEVICE AND OPERATION METHOD THEREOF

Номер: US20220095946A1
Автор: Cha Ki Chul, Ji Chang Su
Принадлежит: InBody Co., Ltd.

A bioimpedance measurement device and an operation method thereof are disclosed. The disclosed bioimpedance measurement device comprises: a body part which accommodates a measurement circuit and comprises a grip that can be gripped by a hand; a first electrode and a second electrode which are coupled to a first shaft provided on one side of the body part and rotate about the first shaft; and a third electrode and a fourth electrode which are coupled to a second shaft provided on the one side of the body part at a position different from that of the first shaft. When a subject to be measured is surrounded by and comes into contact with the first electrode, the second electrode, the third electrode, and the fourth electrode, the bioimpedance of the subject to be measured is measured. 1. A bioimpedance measurement device , the device comprising:a body part configured to accommodate a measurement circuit, the body part including a grip that can be gripped by a hand;a first electrode and a second electrode coupled to a first shaft provided on one side of the body part, the first electrode and the second electrode configured to rotate about the first shaft; anda third electrode and a fourth electrode coupled to a second shaft provided on the one side of the body part at a position different from that of the first shaft, the third electrode and the fourth electrode configured to rotate about the second shaft,wherein the device is configured to measure a bioimpedance of a subject to be measured when the subject to be measured approaches, and is surrounded by and comes into contact with the first electrode, the second electrode, the third electrode, and the fourth electrode.2. The device of claim 1 , wherein the second electrode is configured to accommodate the subject to be measured deeper than when the subject to be measured begins to come into contact with the second electrode claim 1 , by being pressed by the subject to be measured and rotating toward the grip.3. The ...

Подробнее
Номер записи: 84
22-03-2018 дата публикации

FETS and Methods of Forming FETS

Номер: US20180082883A1
Автор: Che-Hui Lee, Chien-Chang Su, Chien-I Kuo, Chii-Horng Li, Heng-Wen Ting, Jung-Chi Tai, Li-Li Su, Yen-Ru LEE, Ying-Wei Li
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.

Подробнее
Номер записи: 85
31-03-2022 дата публикации

TEST SOCKET AND TEST APPARATUS HAVING THE SAME

Номер: US20220099730A1
Автор: Oh Chang Su
Принадлежит:

The present disclosure discloses a test socket according to the present disclosure including an inelastic electro-conductive housing formed of an inelastic electro-conductive material and provided with a plurality of housing holes passing therethrough in the thickness direction, each housing hole being formed at a position corresponding to each terminal of a device under test; and an electro-conductive part formed to have a configuration in which a plurality of electro-conductive particles are oriented in the thickness direction in an elastic insulating material, and comprising an electro-conductive part for grounding, an electro-conductive part for signal, and an electro-conductive part for power disposed in the housing holes, respectively, the electro-conductive part for signal and the electro-conductive part for power being insulated by an insulating layer. 1. A test socket comprising;an inelastic electro-conductive housing formed of an inelastic electro-conductive material and provided with a plurality of housing holes passing therethrough in the thickness direction, each housing hole being formed at a position corresponding to each terminal of a device under test; andan electro-conductive part formed to have a configuration in which a plurality of electro-conductive particles are oriented in the thickness direction in an elastic insulating material, and comprising an electro-conductive part for grounding, an electro-conductive part for signal, and an electro-conductive part for power disposed in the housing holes, respectively, the electro-conductive part for signal and the electro-conductive part for power being insulated by an insulating layer,wherein a ground-connecting end part is provided in the housing hole in which the electro-conductive part for grounding is disposed, provided between an upper and lower end portions of the housing hole, and formed by protruding the inelastic electro-conductive housing from an inner wall forming the housing hole.2. The ...

Подробнее
Номер записи: 86
19-06-2014 дата публикации

POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20140167150A1
Автор: JANG Chang Su, PARK Jaehoon, SEO Dong Soo, SONG In Hyuk, UM Kee Ju
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

There is provided a power semiconductor device including a contact formed in an active region, a trench gate extendedly formed from the first region into a first termination region and formed alternately with the contact, a first conductive well formed between the contact of the active region and the trench gate, a first conductive well extending portion formed in the first termination region and a part of a second termination region, and a first conductive field limiting ring formed in the second termination region and contacting the well extending portion. 1. A power semiconductor device , comprising:a contact formed in an active region;a first conductive body layer and a second conductive emitter layer formed below the contact;a trench gate extendedly formed from the active region into a first termination region and formed alternately with the contact;a first conductive well formed between the contact of the active region and the trench gate;a first conductive well extending portion formed in the first termination region and a part of a second termination region; anda first conductive field limiting ring formed in the second termination region and contacting the well extending portion.2. The power semiconductor device of claim 1 , further comprising a high-concentration second conductive buried hole accumulation part formed below the well and the well extending portion.3. The power semiconductor device of claim 1 , wherein an impurity concentration of the second conductive emitter layer is higher than that of the first conductive body layer.4. The power semiconductor device of claim 1 , further comprising a comb-shaped polysilicon layer formed in the second termination region claim 1 , divided into the field limiting ring and an insulating layer claim 1 , and electrically connected to the trench gate.5. The power semiconductor device of claim 4 , further comprising:a gate metal layer formed above the second termination region and electrically connected to the ...

Подробнее
Номер записи: 87
19-06-2014 дата публикации

METHOD AND APPARATUS FOR ENCODING A 3D MESH

Номер: US20140168360A1
Автор: Ahn Jae Kyun, AHN Min Su, Kim Chang Su, Kim Do Kyoon, Lee Dae Youn, Rhee Tae Hyun
Принадлежит:

Disclosed is a method and apparatus for encoding a three-dimensional (3D) mesh. The method for encoding the 3D mesh includes determining a priority of a gate configuring a 3D mesh corresponding to a 3D object, removing vertices configuring the 3D mesh using the determined priority of the gate, and simplifying the 3D mesh. 1. A method for encoding a three-dimensional (3D) mesh , the method comprising:simplifying a 3D mesh using a priority of a gate configuring the 3D mesh; andencoding connectivity information of a vertex removed from a plurality of vertices configuring the 3D mesh through the simplifying.2. The method of claim 1 , wherein the simplifying of the 3D mesh comprises:determining the priority of the gate using at least one of tag information and valence information on both end vertices configuring the gate; andremoving a front vertex connected to the both end vertices configuring the gate, based on the determined priority.3. The method of claim 2 , wherein the removing of the front vertex comprises:generating a triangle using the both end vertices configuring the gate and the front vertex;generating tag information associated with neighboring vertices of the front vertex; andupdating valence information of the neighboring vertices of the front vertex.4. The method of claim 1 , wherein the simplifying of the 3D mesh comprises:determining a higher priority of the gate for lower valence information on the both end vertices configuring the gate.5. The method of claim 1 , wherein the simplifying of the 3D mesh comprises:determining whether a patch associated with the gate and the front vertex is a null patch; anddetermining a priority of the gate associated with the patch determined to be the null patch to be lower than a priority of the gate associated with the patch determined not to be the null patch.6. The method of claim 5 , wherein the determining of whether the patch is the null patch comprises:determining the patch associated with the front vertex to be ...

Подробнее
Номер записи: 88
30-03-2017 дата публикации

IMAGE SENSOR DEVICE WITH SUB-ISOLATION IN PIXELS

Номер: US20170092684A1
Автор: CHANG SU-HUA, CHIEN Volume, Hsu Yung-Lung
Принадлежит:

An image sensor device includes a substrate, a color filter layer, at least a pixel, a main isolation structure and a sub-isolation structure. The color filter layer is disposed over the substrate. The color filter layer includes a first color filter having a single one of primary colors. The pixel is disposed in the substrate and aligned with the first color filter. The main isolation structure surrounds the pixel in the substrate. The sub-isolation structure is disposed to divide the pixel into a plurality of sub-first pixels. The sub-pixels correspond to the first color filter having the single one of primary colors, and each of the sub-first pixels includes a radiation sensor. 1. An image sensor device , comprising:a substrate;a color filter layer disposed over the substrate, wherein the color filter layer comprises a first color filter having a single one of primary colors;a first pixel disposed in the substrate and aligned with the first color filter;a main isolation structure surrounding the first pixel in the substrate; anda sub-isolation structure disposed to divide the first pixel into a plurality of sub-first pixels, wherein the sub-first pixels correspond to the first color filter having the single one of the primary colors, and each of the sub-first pixels comprises a radiation sensor, wherein each of the sub-first pixels is encircled in a plan view by a union of the main isolation structure and the sub-isolation structure.2. The image sensor device according to claim 1 , wherein the sub-isolation structure has a width that is less than or equal to a width of the main isolation structure.3. The image sensor device according to claim 2 , wherein the width of the sub-isolation structure is about 20%-80% of the width of the main isolation structure.4. The image sensor device according to claim 1 , wherein the substrate has a front side and a backside claim 1 , the color filter layer is disposed adjacent to the backside claim 1 , and the radiation sensor ...

Подробнее
Номер записи: 89
26-06-2014 дата публикации

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20140175612A1
Автор: JANG Chang Su
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a body layer of a first conductivity type; an active layer of a second conductivity type, contacting an upper portion of the body layer; and a field limiting ring of a first conductivity type, formed in an upper portion of the active layer. 1. A semiconductor device , comprising:a body layer of a first conductivity type;an active layer of a second conductivity type, contacting an upper portion of the body layer; anda field limiting ring of a first conductivity type, formed in an upper portion of the active layer.2. The semiconductor device of claim 1 , wherein the active layer enlarges an area through which current flows during an ON operation of the semiconductor device.3. The semiconductor device of claim 1 , wherein a contact portion of the active layer and the body layer has a wave shape or a concavo-convex shape.4. The semiconductor device of claim 1 , further comprising an anode layer of a high-concentration second conductivity type claim 1 , formed in the upper portion of the active layer.5. The semiconductor device of claim 4 , further comprising an anode metal layer formed on an upper portion of the anode layer and electrically connected to the anode layer.6. The semiconductor device of claim 1 , further comprising a cathode layer of a high-concentration first conductivity type claim 1 , contacting a lower portion of the body layer.7. The semiconductor device of claim 6 , further comprising a cathode metal layer formed on a lower portion of the cathode layer and electrically connected to the cathode layer.8. The semiconductor device of claim 1 , further comprising a field stop layer of a high-concentration first conductivity type claim 1 , formed in the active layer and having the same depth as that of the active layer.9. A method of manufacturing a semiconductor device claim 1 , the method comprising:preparing a body layer of a first ...

Подробнее
Номер записи: 90
16-04-2015 дата публикации

APPARATUS, METHOD, AND PROCESSOR FOR MEASURING CHANGE IN DISTANCE BETWEEN A CAMERA AND AN OBJECT

Номер: US20150103163A1
Автор: Hamada Masataka, Kim Chang-Su, Koh Yeong-Jun, LEE CHUL, Lee Dae-youn, Sugimoto Kazuhiko, WON Jong-Hoon
Принадлежит:

Provided is an apparatus for measuring a distance change, the apparatus including an information acquisition unit, an object determination unit, a feature point determination unit, an optical flow calculator, a matching point determination unit, an object length change calculator that calculates a length change ratio between an object of a first frame image and an object of a second frame image by using a feature point and a matching point, and a distance change calculator that calculates a change from a distance between a camera and the object from when the camera acquires the first frame image and when the camera acquires the second frame image using the calculated length change ratio. 1. On a processor , a method of measuring a distance change , the method comprising:acquiring characteristic information of an object in a first frame image, characteristic information of a background of the first frame image, and input characteristic information of a second frame image;determining, based on an optical flow calculated between the object in the first frame image and the object in the second frame image, a feature point of the object in the first frame image and a matching point of the object in the second frame image, wherein the matching point corresponds to the feature point;calculating a length change ratio between the object in the first frame image and the object in the second frame image by using the feature point and the matching point; andcalculating a change in a distance between a camera and the object from when the camera acquires the first frame image and when the camera acquires the second frame image by using the length change ratio.2. The method of claim 1 , wherein the acquiring characteristic information of the object and the background includes:setting an object window based on the object in the first frame image; andcalculating the characteristic information of the object and the background based on a position and a size of the set object window.3. ...

Подробнее
Номер записи: 91
06-04-2017 дата публикации

IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

Номер: US20170098681A1
Автор: KANG Seong-Hun, KIM Yeoun-Soo, LEE Young-Su, PARK Chang-Su
Принадлежит:

Provided is an image sensor having improved characteristics. An image sensor in accordance with an embodiment of the present invention may include first and second photoelectric conversion elements formed in a substrate, wherein the first photoelectric conversion element has a first impurity region; a device isolation trench formed in the substrate and between the first and the second photoelectric conversion elements, wherein a sidewall of the device isolation trench is in contact with the first impurity region; and an epitaxial layer filling the device isolation trench, and having different conductivity from the first impurity region. 1. An image sensor comprising:first and second photoelectric conversion elements formed in a substrate, wherein the first photoelectric conversion element has a first impurity region;a device isolation trench formed in the substrate and between the first and the second photoelectric conversion elements, wherein a sidewall of the device isolation trench is in contact with the first impurity region; andan epitaxial layer filling the device isolation trench, and having different conductivity from the first impurity region.2. The image sensor of claim 1 , wherein the epitaxial layer further extends to over the first and the second photoelectric conversion elements.3. The image sensor of claim 1 , wherein the epitaxial layer has a higher impurity doping concentration than the first impurity region.4. The image sensor of claim 1 , wherein the substrate and the epitaxial layer comprise the same material as each other.5. The image sensor o claim wherein each of the substrate and the epitaxial layer comprises a single crystal silicon-containing material.6. The image sensor of wherein a conductivity type of the first impurity region is an N-type claim 1 , and a conductivity type of the epitaxial layer is a P-type.7. A method for fabricating an image sensor comprising:forming first and second photoelectric conversion elements in a substrate, ...

Подробнее
Номер записи: 92
03-07-2014 дата публикации

DISPLAY DEVICE

Номер: US20140183571A1
Автор: CHANG Su-Jin, Han Sang-Dae, Kim Bo-Ra, KIM Sun-Woong, Lee Sang-Hyun, Moon Won-Taek
Принадлежит: LG DISPLAY CO., LTD.

A display device includes a micro-lens film which has a high fill-factor and a high luminance ratio and prevents generation of moiré. The display device includes a display panel configured to display an image, a plurality of Light Emitting Diodes (LEDs) configured to generate light to supply light to the display panel, a light guide panel configured to guide light to the display panel, and a micro-lens film including a base film that concentrates and diffuses light emitted from the light guide panel, a lens unit at an upper surface of the base film, and a back-coating film at a lower surface of the base film. The lens unit includes unit block groups randomly arranged at the upper surface of the base film, each unit block group containing randomly arranged fixed-shape lenses having different sizes, and micro-beads randomly formed on surfaces of the fixed-shape lenses. 1. A display device comprising:a display panel configured to display an image;a plurality of Light Emitting Diodes (LEDs) configured to generate light to supply light to the display panel;a light guide panel configured to guide light to the display panel; anda micro-lens film including a base film that concentrates and diffuses light emitted from the light guide panel, a lens unit at an upper surface of the base film, and a back-coating film at a lower surface of the base film,wherein the lens unit includes unit block groups randomly arranged at the upper surface of the base film, each unit block group containing randomly arranged fixed-shape lenses having different sizes, and micro-beads randomly arranged on surfaces of the fixed-shape lenses.2. The device according to claim 1 , wherein additional micro-beads are between the fixed-shape lenses.3. The device according to claim 1 , wherein the fixed-shape lenses having different sizes are semispherical fixed-shape lenses claim 1 , a ratio of height to diameter of which is set to 1:2 despite different sizes of the fixed-shape lenses.4. The device ...

Подробнее
Номер записи: 93
03-07-2014 дата публикации

Touch-sensitive device and cover lens assembly

Номер: US20140184955A1
Автор: Chia-Chi Chen, Kuo-Chang Su, Ming-Kung Wu, Yu-Ting Lin
Принадлежит: Wintek Corp

A touch-sensitive device includes a transparent substrate, a touch-sensing structure, a decorative layer, a trace layer, a passivation layer and a sheltering layer. The touch-sensing structure is disposed on the transparent substrate and located in a touch-sensitive region. The decorative layer is disposed on the transparent substrate and located in a non-touch-sensitive region, and the trace layer is disposed on the decorative layer. The passivation layer is disposed on the transparent substrate and at least covers the touch-sensing structure and the trace layer. The sheltering layer is disposed at least on the passivation layer and located in the non-touch-sensitive region.

Подробнее
Номер записи: 94
13-04-2017 дата публикации

APPARATUS FOR SWITCHING/ROUTING IMAGE SIGNALS THROUGH BANDWIDTH SPLITTING AND REDUCTION AND THE METHOD THEREOF

Номер: US20170104974A1
Автор: BAK Chun Dae, Kim Chang Su
Принадлежит:

The present invention relates to an apparatus and method for IP switching/routing SDI format image signal through bandwidth splitting and reduction, more specifically, which decomposes image signals consisting of YCbCr type color format entered with serial digital interface (SDI) into Y (luminance) component and C (chrominance) component, or multiple bit slice components; converts the components into IP packets and performs switching and/or routing of the IP packets; extracts Y component and C component or multiple bit slice components from the switched or routed IP packets; and combines the components into SDI format image signal and outputs the combined SDI format image signal. In addition, the present invention provides an apparatus switching/routing image signals through grid based networking, in which broadband switching or routing is performed with multiple narrow band switches or routers by switching or routing image signals through bandwidth splitting and reduction. 1. An apparatus for IP switching/routing through decomposed processing of SDI format video signals is configured to:decompose SDI format video signal into Y component and C component, multiple bit slice components or the combinations thereof, and convert the decomposed components to IP packets;switch or route the converted IP packets; andconvert the switched or routed IP packets to Y component and C component, multiple bit slice components, or the combinations thereof, and compose the converted components into SDI format video signal.2. The apparatus of claim 1 , further configured to provide synchronization of processing for video signals and IP packets; andwherein the synchronization is to extract a synchronization signal from the SDI format video signal, decompose or combine the SDI video signal according to the extracted synchronization signal, and combine and output the SDI format video signal while maintaining the integrity of inputted SDI format video signal.3. The apparatus of claim 1 , ...

Подробнее
Номер записи: 95
30-04-2015 дата публикации

ROTATIONAL HAIR STYLING DEVICE FOR EASILY MAKING SPIRAL CURLS

Номер: US20150114425A1
Автор: PARK Chang Su
Принадлежит:

Disclosed therein is a rotational hair styling device for easily making spiral curls including: an upper case being elongated; a lower case rotatably hinge-coupled with a hinge part of the upper case; a heating member of a bar shape horizontally located in the winding space part; a driving motor embedded in the lower case collinearly with the heating member; and a winder member connected to a driving gear of the driving motor and rotated forwardly and reversely around the heating member inside the heating space part for spirally winding the hair. 1. A rotational hair styling device for easily making spiral curls comprising:an upper case being elongated, the upper case having hair pressing part which is formed at one end thereof and is in contact with the upper portion of the hair and a hinge part formed at the other end;a lower case rotatably hinge-coupled with a hinge part of the upper case, the lower case having a winding space part formed at one end thereof corresponding to the hair pressing part, the winding space part having an opened upper portion in which the hair is accommodated;a heating member of a bar shape horizontally located in the winding space part, the heating member having a heating space part between the heating member and the inner circumferential surface of the lower case for winding and heating the hair;a driving motor embedded in the lower case collinearly with the heating member; anda winder member connected to a driving gear of the driving motor and rotated forwardly and reversely around the heating member inside the heating space part for spirally winding the hair, which is grasped between the winding space part and the hair pressing part, from the middle to the end of the hair when the upper and lower cases are closed and for heating the hair in a state where the hair is in contact with the surface of the heating member.2. The rotational hair styling device according to claim 1 , wherein the auxiliary heating member is mounted in the ...

Подробнее
Номер записи: 96
28-04-2016 дата публикации

AUDIO OUTPUT APPARATUS, ELECTRONIC APPARATUS AND BODY FAT MEASURING METHOD

Номер: US20160113579A1
Автор: Lee Chang Su, LEE Sang Moon, Moon Sung Soo, Rhee Bong Jae, SEO Kem Suk
Принадлежит:

A portable audio output apparatus, including an audio output module configured to be in contact with a user's body and to output an audio signal, and a body fat sensor configured to sense a body resistance value of the user through at least four body contact nodes, is provided. At least two of the nodes are placed at outer surface areas of the audio output apparatus that are out of contact with the body if the user wears the audio output apparatus. 1. A portable audio output apparatus comprising: ["contact a user's body, and", 'output an audio signal; and', 'a body fat sensor configured to sense a body resistance value of the user through at least four body contact nodes,', 'wherein at least two of the nodes are placed at outer surface areas of the audio output apparatus that are out of contact with the body when the user wears the portable audio output apparatus., 'an audio output module configured to2. The portable audio output apparatus of claim 1 , wherein a part of the nodes is placed at an outer surface area of the audio output apparatus that is in contact with the body when the user wears the portable audio output apparatus claim 1 , and the other part of the nodes is placed at an outer surface area of the audio output apparatus that is out of contact with the body when the user wears the portable audio output apparatus.4. The portable audio output apparatus of claim 1 , further comprising:a signal line connected to an electronic apparatus and configured to transmit a signal; anda switch configured to switch the signal line to be connected with one of the audio output module or the body fat sensor.5. The portable audio output apparatus of claim 4 , wherein the switch is a button switch claim 4 , andwherein if the switch is pressed, the signal line is connected with the body fat sensor.6. The portable audio output apparatus of claim 4 , wherein the signal comprises a body resistance value or an audio signal.7. A portable electronic apparatus comprising:a ...

Подробнее
Номер записи: 97
28-04-2016 дата публикации

ROAD MARKING USING OPTICAL ILLUSION

Номер: US20160115655A1
Автор: Kim Min Gaung, Lee Chang Su
Принадлежит:

Disclosed is a surface sign that is seen by the driver as raised vertically improving the readability by the driver, and as for the surface signs with an optical illusion effect that can aid the driver in driving safely due to the tendency of being able to capture the gaze of the driver printing onto the road surface creating surface signs that provides information to a far off above driver using copy or shapes, from the standard distance between the above driver and the above surface sign, where the roadside prints are formed longer than the wayside prints for random waysides and roadsides reflected at the same distances form in the periphery of the above driver, and the surface of the road is painted in order for the two nearby roadsides to form a mutually acute angle. 3. The method for printing road surface signs as claim 1 , wherein the length of the top side (S) of the trapezoid is about 1.43 times greater than a length of the bottom side of the trapezoid.4. The method for printing road surface signs as claim 3 , wherein the second length (y) is about 1.7 times greater than the first length. This application is a continuation application of co-pending U.S. application Ser. No. 14/404,565, filed Nov. 28, 2014, the disclosure of which is incorporated herein by reference. This application claims priority benefits under 35 U.S.C. §1.119 to Korean Patent Applications No. 10-2012-0103136 filed Sep. 18, 2012 and No. 10-2012-0128126 filed Nov. 13, 2012.1. Field of the InventionThis invention is for various types of surface signs printed on the surface of the road for signage purpose, more specifically, the surface sign would be in a form that appears to be elevated vertically making it easy for the driver to recognize the sign which can enhance readability, and it draws the drivers gaze to the road helping the driver practice safer driving.2. Description of Related ArtThere are many printed surface signs on the road today. Such surface signs make it possible for ...

Подробнее
Номер записи: 98
17-07-2014 дата публикации

PRODUCTION METHOD FOR A PLATE HEAT EXCHANGER

Номер: US20140196286A1
Автор: Hong Seong-hui, Kang Jeong-yun, Kim Chang-Su, Kim Hyeon-jun, Kim In-gon, Lee Jae-geun
Принадлежит: DongHwa entec Co., Ltd.

A method of manufacturing a plate heat exchanger. The method of manufacturing a plate heat exchanger includes the steps of: electroplating a surface of a mold having a groove pattern formed on a surface thereof to form a plate; separating the plate from the mold; electroplating both sides of the separated plate with a brazing binder to form a plate unit; stacking the plate units such that grooves formed on the plate units intersect each other; and heating and pressing the stacked plate units to bind them each other. 1. A method of manufacturing a plate heat exchanger , comprising the steps of:electroplating a surface of a mold having a groove pattern formed on a surface thereof to form a plate;separating the plate from the mold;electroplating both sides of the separated plate with a brazing binder to form a plate unit;stacking the plate units such that grooves formed on the plate units intersect each other; andheating and pressing the stacked plate units to bind them each other.2. A method of manufacturing a plate heat exchanger , comprising the steps of:electroplating a surface of a mold having a groove pattern formed on a surface thereof with a brazing binder;electroplating a surface of the brazing binder to form a plate;electroplating a surface of the plate with a brazing binder to form a plate unit;separating the plate unit from the mold;stacking the plate units such that grooves formed on the plate units intersect each other; andheating and pressing the stacked plate units to bind them each other. This is a continuation of pending International Patent Application PCT/KR2011/001761 filed on Mar. 14, 2011, which designates the United States and claims priority of Korean Patent Application No. 10-2010-0073869 filed on Jul. 30, 2010, the entire contents of which are incorporated herein by reference.The present invention relates to a method of manufacturing a heat exchanger and, more particularly, to a method of manufacturing a plate heat exchanger, which can ...

Подробнее
Номер записи: 99
07-05-2015 дата публикации

BACKSIDE ILLUMINATOR IMAGE SENSOR DEVICE WITH SHIELDING LAYER

Номер: US20150123225A1
Автор: CHANG SU-HUA, CHIEN Volume, HUANG ZEN-FONG, JENG Chi-Cherng, WEI Chia-Yu
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd.

A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate. 1. A backside illuminated image sensor device , comprising:a semiconductor substrate having a pixel array on a front surface of the semiconductor substrate;a dielectric layer disposed on a back surface of the semiconductor substrate to cover a backside of the pixel array;a conductive shielding line disposed on the dielectric layer;a dielectric buffer layer disposed on the conductive shielding line and the dielectric layer;a color filter layer disposed on the dielectric buffer layer; anda microlens layer disposed on the color filter layer.2. The image sensor device of claim 1 , wherein the conductive shielding line surrounding the pixel array.3. The image sensor device of claim 1 , wherein the conductive shielding line is made from a metal claim 1 , a conductive oxide claim 1 , a conductive polymer claim 1 , or graphene.4. The image sensor device of claim 1 , wherein a width of the conductive shielding line is at least 300 μm.5. The image sensor device of claim 1 , wherein the dielectric layer is made from a dielectric material having a dielectric constant higher than or equal to the dielectric constant of silicon oxide.6. The image sensor device of claim 1 , wherein the dielectric buffer layer is made from silicon oxide.7. A backside illuminated image sensor device claim 1 , comprising:a semiconductor substrate having an pixel array on a front surface of the semiconductor substrate;a dielectric layer disposed on a back surface of the semiconductor substrate to cover a backside of the pixel array;a plurality of patterned conductive shielding lines disposed on the dielectric layer and surrounding the ...

Подробнее
Номер записи: 100
05-05-2016 дата публикации

Electrode for Measuring Living Body Signal

Номер: US20160120475A1
Автор: Cha Ki Chul, Ji Chang Su
Принадлежит: InBody Co., Ltd.

An electrode device for measuring a living body is herein disclosed. The electrode device for measuring a living body signal includes a body comprising a handle part and a tongs part, the body elastically moving by an external force, an electrode part comprising needles disposed on inner surfaces of the tongs part to face each other, and a wire part connected to one end of the electrode part for a connection with a measuring device. 1. An electrode device for measuring a living body signal , comprising:a body comprising a handle part and a tongs part, the body elastically moving by an external force;an electrode part comprising needles disposed on inner surfaces of the tongs part to face each other; anda wire part connected to one end of the electrode part for a connection with a measuring device.2. The electrode device of claim 1 , wherein the living body signal is measured from a scalp at a state where the electrode part is fixed to the scalp using a restoring force which is obtained after opening the tongs part of the body by the external force applied to the handle part.3. The electrode device of claim 1 , wherein the electrode part is fixed to a living body using a restoring force which is obtained after opening the tongs part of the body by the external force applied to the handle part.4. The electrode device of claim 3 , wherein that the electrode part is fixed to the living body by the restoring force is that the electrode part is inserted into an outer skin layer of the living body.5. The electrode device of claim 1 , wherein opposite ends of the tongs part are not touched with each other even though the external force is not applied to the handle part.6. The electrode device of claim 1 , wherein the needles of the electrode part are disposed at opposite ends of the tongs part to face each other claim 1 , andwherein the needles are fixed to a living body as the tongs part is closed.7. The electrode device of claim 6 , wherein the needles of the electrode ...

Подробнее
Номер записи: 101
07-05-2015 дата публикации

METHOD AND APPARATUS FOR GENERATING HIERARCHICAL SALIENCY IMAGES DETECTION WITH SELECTIVE REFINEMENT

Номер: US20150125082A1
Автор: Hamada Masataka, Kim Chang-Su, KIM Jun-seong, Sugimoto Kazuhiko, WON Jong-Hoon
Принадлежит:

A method of generating a saliency image, which includes: converting an input image into an input image of the first size and an input image of the second size; applying a saliency extraction scheme to the input image of the first size to generate a first saliency image; converting the first saliency image to the second size; extracting an area that satisfies a first condition from the converted first saliency image; determining an area of the input image of the second size that corresponds to the extracted area; and generating a second saliency image by multiplying an image generated by applying the saliency extraction scheme to the determined area, and the converted first saliency image. 1. A method of generating a saliency image , the method comprising:converting an input image into an input image of the first size and an input image of the second size;applying a saliency extraction scheme to the input image of the first size to generate a first saliency image; converting the first saliency image to the second size;extracting an area that satisfies a first condition from the converted first saliency image;determining an area of the input image of the second size that corresponds to the extracted area; and an image generated by applying the saliency extraction scheme to the determined area, and', 'the converted first saliency image., 'generating a second saliency image by multiplying'}2. The method of claim 1 , wherein the first size and the second size are smaller than the size of the input image and the first size is smaller than the second size.3. The method of claim 1 , wherein the first condition is set based on a gray level value of a pixel of the resized first saliency image.4. The method of claim 1 , further comprising:converting the input image into an input image of a third size;converting the second saliency image to the third size;extracting an area that satisfies a second condition from the converted second saliency image;determining an area ...

Подробнее
Номер записи: 102
24-07-2014 дата публикации

Touch panel

Номер: US20140204043A1
Автор: Chen-Hao Su, Chin-Pei Hwang, Kuo-Chang Su, Kuo-Hsing Chen, Ming-Kung Wu, Yan-Ling Li, Yi-Chun Lin, Yu-Ting Chen, Yun-Bin Lee
Принадлежит: Wintek Corp

A touch panel including a substrate, a decoration layer, and conductive elements is provided. The decoration layer has an outer margin adjacent to an edge of the substrate and an inner margin opposite to the outer region. A reference line is away from the inner margin with a distance of at least 20 μm towards a direction away from the outer margin. At least one of the conductive elements includes a cross-interface portion which covers the decoration layer and a region of the substrate without the decoration layer. A first distance and a second distance between two adjacent cross-interface portions are provided in a region outward of the reference line to the outer margin of the decoration layer, and in a region inward of the reference line, respectively. The first distance is greater than the second distance. The conductive elements construct touch sensing units for forming a capacitance coupling.

Подробнее
Номер записи: 103
25-04-2019 дата публикации

ARTIFICIAL SYNAPSE INDUCER AND METHOD OF MAKING THE SAME

Номер: US20190119343A1
Автор: CHUNG Taek Dong, HWANG In Seong, Jeon Chang Su, KIM Eun Joong
Принадлежит:

Disclosed is a polypeptide containing an extracellular domain of a synaptogenic protein, and a method for manufacturing a nerve cell, a complex containing a biotin tagged at the C-terminus of the polypeptide, an artificial synapse inducer for coupling the composite to a streptavidin (SAV)-coated substrate and a nerve cell. The complex tagged with a biotin at the C-terminus of the polypeptide containing the extracellular domain of the synaptogenic protein, such as neuroligin-1, can display activity by being attached to the SAV-coated substrate to adjust the orientation thereof without help of a supported lipid bilayer. The complex containing an additional RFP between the extracellular domain and the biotin of the synaptogenic protein not only facilitates easier mass-production, quantification, and tracking, but also displays activity of a normal synaptogenic protein, thereby inducing excitatory or inhibitory synaptic differentiation by being fixed to the substrate and added to the nerve cell culture. 1. An artificial synapse inducer comprising:a complex comprising a polypeptide and a biotin conjugated to the polypeptide, wherein the polypeptide comprises the sequence of SEQ ID NO: 11; anda substrate coated with a biotin-binding protein,wherein the biotin and the biotin-binding protein are bound together such that the complex is attached to the substrate without a lipid bilayer.2. The artificial synapse inducer of claim 1 , wherein the biotin-binding protein is selected from the group of avidin-like proteins consisting of streptavidin claim 1 , traptavidin claim 1 , and neutravidin.3. The artificial synapse inducer of claim 1 , wherein the substrate comprises a microbead.4. The artificial synapse inducer of claim 1 , the complex comprises a fluorescent protein.5. The artificial synapse inducer of claim 4 , wherein the fluorescent protein is selected from the group consisting of red fluorescent protein (RFP) claim 4 , blue fluorescent protein (BFP) claim 4 , green ...

Подробнее
Номер записи: 104
25-08-2022 дата публикации

METHOD OF FORMING BACKSIDE ILLUMINATED IMAGE SENSOR DEVICE WITH SHIELDING LAYER

Номер: US20220271071A1
Автор: CHANG SU-HUA, CHIEN Volume, HUANG ZEN-FONG, JENG Chi-Cherng, WEI Chia-Yu
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd.

A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate. 1. A method of manufacturing a backside illuminated image sensor device , the method comprising:forming a dielectric layer on a back surface of a semiconductor substrate, wherein the semiconductor substrate has an pixel array formed on a front surface of the semiconductor substrate;patterning the dielectric layer to form a plurality of scribe lines surrounding the pixel array;forming a conductive shielding layer on the dielectric layer;patterning the conductive shielding layer to expose the scribe lines;forming a dielectric buffer layer on the patterned conductive shielding layer and the dielectric layer;forming a color filter layer on the dielectric buffer layer; andforming a microlens layer on the color filter layer.2. The method of claim 1 , wherein the conductive shielding layer is patterned to expose the pixel array.3. The method of claim 1 , wherein the conductive shielding line is made from a metal claim 1 , a conductive oxide claim 1 , a conductive polymer claim 1 , or graphene.4. The method of claim 1 , wherein a width of the patterned conductive shielding layer is at least 300 μm.5. The method of claim 1 , wherein the dielectric layer is made from a dielectric material having a dielectric constant higher than or equal to the dielectric constant of silicon oxide.6. The method of claim 1 , wherein the dielectric layer is made from silicon oxide or silicon nitride.7. The method of claim 1 , wherein the dielectric buffer layer is made from silicon oxide.8. The method of claim 1 , wherein the pixel array is void of the patterned conductive shielding layer.9. The method of claim 1 , wherein the ...

Подробнее
Номер записи: 105
25-08-2022 дата публикации

Nanosheet semiconductor device and method for manufacturing the same

Номер: US20220271171A1
Автор: Bang-Ting Yan, Chien-Chang Su, Chien-I Kuo, Chien-Wei Lee, Chih Teng HSU, Chih-Chiang Chang, Chii-Horng Li, Yan-Ting Lin, Yee-Chia Yeo
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Подробнее
Номер записи: 106
31-07-2014 дата публикации

DIODE, ESD PROTECTION CIRCUIT AND METHOD OF MANUFACTURING THE SAME

Номер: US20140210003A1
Автор: JEON Kyoung-Ki, Kim Chang-Su, Kim Han-Gu, Ko Jae-Hyok, KO Min-Chang
Принадлежит:

A method of manufacturing a diode is provided. An N-type well region is formed in a first upper portion of an N-type epitaxial layer. A P-type drift region is formed in a second upper portion of the N-type epitaxial layer. An N-type doping region is formed in the N-type well region. A P-type doping region is formed in the P-type drift region. An isolation structure is formed in the P-type drift region. The isolation structure is disposed between the P-type doping region and the N-type well region. A first electrode is formed on a portion of the N-type epitaxial layer. The portion of the N-type epitaxial layer is disposed between the N-type well region and the P-type drift region. The first electrode overlaps a portion of the isolation structure. A connection structure is formed to electrically couple the N-type doping region and the first electrode. 1. A diode , the diode comprising:an N-type well region disposed in an N-type epitaxial layer;a P-type drift region disposed in the N-type epitaxial layer, wherein the P-type drift region is spaced apart from the N-type well region;a cathode electrode including a first electrode and an N-type doping region, wherein the N-type doping region is electrically coupled to the first electrode, the N-type well region includes the N-type doping region only and does not include a P-type doping region, and the first electrode is disposed on the N-type epitaxial layer;an anode electrode including a P-type doping region, wherein the P-type doping region is disposed in the P-type drift region; andan isolation structure disposed in the P-type drift region, wherein the isolation structure is disposed between the N-type well region and the P-type doping region,wherein the first electrode of the cathode overlaps part of the isolation structure,wherein the first electrode corresponds to a gate of a P-type LDMOS transistor,wherein the N-type well region, the P-type drift region, the P-type doping region, and the isolation structure of the ...

Подробнее
Номер записи: 107
27-05-2021 дата публикации

ADVERTISEMENT MANAGEMENT DEVICE MANAGING ADVERTISEMENT PROVIDED VIA PLATFORM SERVER AND OPERATION METHOD OF ADVERTISEMENT MANAGEMENT DEVICE

Номер: US20210158388A1
Автор: AN Myoung Gon, CHO Kyung Jang, CHO Kyung Rae, JU Jin Hyeong, JUNG Ho Yun, KANG Chel, KIM Gi Hye, Lee Chang Su, LEE Do Ho, LEE Hak, Lee Jang Won, LEE Sang Ki, NAM Seung Woo, YUN Bit Na
Принадлежит:

Provided is an operating method of an advertisement management device, the operating method including: based on log data of a plurality of users collected from a certain game, setting at least one group for the certain game; registering advertisement information to be provided to the at least one group; requesting a plurality of platform servers capable of providing advertisements to provide the advertisement information for each of the at least one group; obtaining, from the plurality of platform servers, feedback information of advertisements provided for each of the at least one group; and based on the feedback information, performing management of the advertisement information registered for each of the at least one group. 1. An operating method of an advertisement management device , the operating method comprising:based on log data of a plurality of users collected from a certain game, setting at least one group for the certain game;registering advertisement information to be provided to the at least one group;requesting a plurality of platform servers capable of providing advertisements to provide the advertisement information for each of the at least one group;obtaining, from the plurality of platform servers, feedback information of advertisements provided for each of the at least one group; andbased on the feedback information, performing management of the advertisement information registered for each of the at least one group.2. The operating method of claim 1 , wherein the setting of the at least one group for the certain game comprises:determining at least one parameter used for setting a group from among a user's access rate in the certain game, a user's access time in the certain game, an item purchased by a user and a purchase amount of the item in the certain game, and a user's game level and character in the certain game; andsetting at least one group for the certain game, based on a value of the at least one parameter for the plurality of users ...

Подробнее
Номер записи: 108
21-05-2015 дата публикации

NEGATIVE ACTIVE MATERIAL AND NEGATIVE ELECTRODE AND LITHIUM BATTERY CONTAINING THE MATERIAL, AND METHOD OF MANUFACTURING THE SAME

Номер: US20150140359A1
Автор: Do Ui-Song, Kim Sung-Su, Kim Young-Ugk, Park Hyun-Ki, Park Sang-Eun, Shin Chang-Su
Принадлежит: Samsung SDI Co., Ltd.

In an aspect, a negative active material, a negative electrode and a lithium battery including the negative active material, and a method of manufacturing the negative active material is provided. The negative active material includes a silicon-based active material substrate; a metal oxide nanoparticle disposed on a surface of the silicon-based active material substrate. An initial irreversible capacity of the lithium battery may be decreased and lifespan characteristics may be improved by using the negative active material. 1. A negative active material comprising:a silicon active material substrate; andmetal oxide nanoparticles disposed on a surface of the silicon active material substrate, wherein the metal oxide nanoparticles include a component having a rutile phase.2. The negative active material of claim 1 , wherein the metal oxide nanoparticles have an angle of diffraction 2θ having a peak at 27°˜28° in an x-ray diffraction (XRD) pattern obtained using CuKα rays.3. The negative active material of claim 1 , wherein the silicon active material substrate is from about 40 at % to about 90 at % silicon.4. The negative active material of claim 1 , wherein the metal oxide nanoparticle comprises as a main component at least one selected from the group consisting of titanium oxide claim 1 , aluminum oxide claim 1 , chromium trioxide claim 1 , zinc oxide claim 1 , copper oxide claim 1 , magnesium oxide claim 1 , zirconium dioxide claim 1 , molybdenum trioxide claim 1 , vanadium pentoxide claim 1 , niobium pentoxide claim 1 , and tantalum pentoxide claim 1 , and wherein at least 90 wt % of the metal oxide nanoparticle is the main component.5. The negative active material of claim 1 , wherein an average diameter of the metal oxide nanoparticles is about 1 nm to about 30 nm.6. The negative active material of claim 1 , wherein the metal oxide nanoparticles form an island type coating layer on a surface of the silicon active material substrate.7. The negative active ...

Подробнее
Номер записи: 109
19-05-2016 дата публикации

Synaptogenic protein tagged with biotin and reconstitution of artificial synapse by using same

Номер: US20160137707A1
Автор: Chang Su Jeon, Eun Joong KIM, In Seong Hwang, Taek Dong Chung
Принадлежит: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Disclosed is a polypeptide containing an extracellular domain of a synaptogenic protein, and a method for manufacturing a nerve cell, a complex containing a biotin tagged at the C-terminus of the polypeptide, an artificial synapse inducer for coupling the composite to a streptavidin (SAV)-coated substrate and a nerve cell. The complex tagged with a biotin at the C-terminus of the polypeptide containing the extracellular domain of the synaptogenic protein, such as neuroligin-1, can display activity by being attached to the SAV-coated substrate to adjust the orientation thereof without help of a supported lipid bilayer. The complex containing an additional RFP between the extracellular domain and the biotin of the synaptogenic protein not only facilitates easier mass-production, quantification, and tracking, but also displays activity of a normal synaptogenic protein, thereby inducing excitatory or inhibitory synaptic differentiation by being fixed to the substrate and added to the nerve cell culture.

Подробнее
Номер записи: 110
07-08-2014 дата публикации

Plasma generator, manufacturing method of rotating electrode for plasma generator, method for performing plasma treatment of substrate, and method for forming thin film having mixed structure by using plasma

Номер: US20140217881A1
Автор: Jeong Yong Soo, Kang Jae Wook, Kim Chang Su, Kim Dong Ho, KWON Jung-Dae, Lee Gun Hwan, Lee Sung Hun, NAM Kee-Seok, Park Sung Gyu, Yoon Jung Heum
Принадлежит: KOREA INSTITUTE OF MACHINERY & MATERIALS

A plasma generator according to an embodiment of the present invention is provided to generate a high density and stable plasma at near atmospheric pressure by preventing a transition of plasma to arc. The plasma generator includes a plate-shaped lower electrode for seating a substrate; and a cylindrical rotating electrode on the plate-shaped lower electrode, wherein the cylindrical rotating electrode includes an electrically conductive body that is connected to a power supply and includes a plurality of capillary units on an outer circumferential surface of the electrically conductive body; and an insulation shield layer that is made of an insulation material or a dielectric material, exposes a lower surface of the plurality of capillary units, and shields other parts. 161-. (canceled)62. A plasma generator comprising:a plate-shaped lower electrode for seating a substrate; anda cylindrical rotating electrode on the plate-shaped lower electrode, an electrically conductive body that is connected to a power supply and includes a plurality of capillary units on an outer circumferential surface of the electrically conductive body; and', 'an insulation shield layer that is disposed on the outer circumferential surface of the body and exposes a lower surface of the plurality of capillary units., 'wherein the cylindrical rotating electrode includes'}63. The plasma generator of claim 62 ,wherein the shield layer exposes the lower surface of the plurality of capillary units and shields other part.64. The plasma generator of claim 62 , further comprising:an electrically conductive layer on the lower surface of the capillary unit, andwherein the electrically conductive layer includes at least one of a metal, an alloy, an electrically conductive ceramic, an electrically conductive carbon body, and an electrically conductive polymer, that has a higher secondary electron emission coefficient than the lower surface.65. The plasma generator of claim 62 ,wherein the plurality of ...

Подробнее
Номер записи: 111
11-05-2017 дата публикации

ENHANCED DATA PROCESSING APPARATUS EMPLOYING MULTIPLE-BLOCK BASED PIPELINE AND OPERATION METHOD THEREOF

Номер: US20170134740A1
Автор: HAN Chang-su, Kim Myung-Ho, NA Sang-kwon, Park Chan-Sik, YOO Ki-won
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Provided are a method and an apparatus for decoding an image by accessing a memory by a block group. The method comprises checking information regarding a size of one or more blocks included in a bitstream of an encoded image, determining whether to group one or more blocks for performing decoding, based on the information regarding the size of the one or more blocks, setting a block group including one or more blocks based on the information regarding the size of the one or more blocks, and accessing a memory by the block group to perform a parallel-pipeline decoding process by the block group. 1. A method of decoding an image , the method comprising:obtaining size information regarding a size of one or more blocks included in a bitstream of an encoded image;grouping a plurality of blocks among the one or more blocks into a block group for performing decoding of the plurality of blocks, based on the size information of the plurality of blocks;requesting reference image data corresponding to the plurality of blocks included in the block group from a memory in a memory access request signal; andperforming a parallel-pipeline decoding process on the block group, based on the reference image data corresponding to the plurality of blocks included in the block group.2. The method of claim 1 , wherein the parallel-pipeline decoding process comprises operations for entropy decoding claim 1 , inverse-quantization/inverse-transformation claim 1 , intra/inter prediction claim 1 , reconstruction claim 1 , and filtering calculation claim 1 , andwherein each of the operations are sequentially delayed according to a cycle by the block group and performed in parallel.3. The method of claim 1 , wherein the grouping comprises:determining that the size information of the plurality of blocks indicates that the size of each of the plurality of blocks one or more blocks is less than 16×16 or is 16×16; andgrouping the plurality of blocks in response to determining that the size ...

Подробнее
Номер записи: 112
28-05-2015 дата публикации

ROAD MARKING USING OPTICAL ILLUSION

Номер: US20150143727A1
Автор: Kim Min Gaung, Lee Chang Su
Принадлежит:

This invention is a surface sign that is seen by the driver as raised vertically improving the readability by the driver, and as for the surface signs with an optical illusion effect that can aid the driver in driving safely due to the tendency of being able to capture the gaze of the driver printing onto the road surface creating surface signs that provides information to a far off above driver using copy or shapes, from the standard distance between the above driver and the above surface sign, where the roadside prints are formed longer than the wayside prints for random waysides and roadsides reflected at the same distances form in the periphery of the above driver, and the surface of the road is painted in order for the two nearby roadsides to form a mutually acute angle, which is the feature of this invention. 1. Because of the surface sign providing information to the driver from a distance of the copy or shapes that are printed on the surface of the roadFrom the standard distance between the above driver and the above surface sign, where the roadside prints are formed longer than the wayside prints for random waysides and roadsides reflected at the same distances form in the periphery of the above driver, and the surface of the road is painted in order for the two nearby roadsides to form a mutually acute angle, which is the feature of this invention, the closer the location of the above driver to the above standard distance then gradually the two above nearby roadsides will be reflected in the field of view of the above driver and be recognized as growing parallel, which is the surface sign with an optical illusion effect. This invention is for various types of surface signs printed on the surface of the road for signage purpose, more specifically, the surface sign would be in a form that appears to be elevated vertically making it easy for the driver to recognize the sign which can enhance readability, and it draws the drivers gaze to the road helping the ...

Подробнее
Номер записи: 113
28-05-2015 дата публикации

POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20150144989A1
Автор: JANG Chang Su, PARK Jae Hoon, SEO Dong Soo, SONG In Hyuk, UM Kee Ju
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A power semiconductor device may include: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type and formed on the first semiconductor region; a third semiconductor region having the first conductivity type and formed in an upper portion of the second semiconductor region; a trench gate formed to penetrate from the third semiconductor region to the first semiconductor region, having a gate insulating layer formed on a surface thereof, and filled with a conductive material; and a fourth semiconductor region having the second conductivity type and formed to penetrate through the second semiconductor region. 1. A power semiconductor device , comprising:a first semiconductor region of first conductivity type;a second semiconductor region of second conductivity type disposed on the first semiconductor region;a third semiconductor region of the first conductivity type disposed in an upper portion of the second semiconductor region;a trench gate penetrating from the third semiconductor region to the first semiconductor region, having a gate insulating layer disposed on a surface thereof, and filled with a conductive material; anda fourth semiconductor region of the second conductivity type penetrating through the second semiconductor region.2. The power semiconductor device of claim 1 , wherein the fourth semiconductor region has an impurity concentration higher than that of the second semiconductor region.3. The power semiconductor device of claim 1 , wherein the fourth semiconductor region is formed to be spaced apart from the trench gate.4. The power semiconductor device of claim 1 , further comprising a fifth semiconductor region having the first conductivity type and formed to be spaced apart from the trench gate below the fourth semiconductor region.5. The power semiconductor device of claim 4 , wherein the fifth semiconductor region is formed to contact the fourth semiconductor region.6. The ...

Подробнее
Номер записи: 114
28-05-2015 дата публикации

POWER SEMICONDUCTOR DEVICE

Номер: US20150144992A1
Автор: JANG Chang Su, PARK Jae Hoon, SEO Dong Soo, SONG In Hyuk
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; an termination region formed in the vicinity of the active region; a plurality of trenches formed in a length direction of the active region; a first conductivity type hole accumulating region formed below the channel in the active region; and a first conductivity type electric field limiting region formed in the termination region. The electric field limiting region is formed so as to at least partially cover a trench positioned at a boundary between the active region and the termination region. 1. A power semiconductor device comprising:an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device;an termination region disposed in the vicinity of the active region;a plurality of trenches extending in a length direction of the active region;a first conductivity type hole accumulating region disposed below the channel in the active region; anda first conductivity type electric field limiting region disposed at an upper portion of the termination region,wherein the electric field limiting region is configured to at least partially cover a trench positioned at a boundary between the active region and the termination region.2. The power semiconductor device of claim 1 , wherein the electric field limiting region at least partially covers a lower portion of the trench positioned at the boundary between the active region and the termination region.3. The power semiconductor device of claim 1 , wherein the electric field limiting region is formed at a depth deeper than that of the trench positioned at the boundary between the active region and the termination region.4. The power semiconductor device of claim 1 , wherein a depth of the trench positioned at the boundary between the active region and the ...

Подробнее
Номер записи: 115
28-05-2015 дата публикации

POWER SEMICONDUCTOR DEVICE

Номер: US20150144993A1
Автор: JANG Chang Su, OH Ji Yeon, PARK Jae Hoon, SONG In Hyuk, UM Kee Ju
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; a termination region formed in the vicinity of the active region; a plurality of first trenches formed lengthwise in one direction in the active region; and at least one or more second trenches formed lengthwise in one direction in the termination region. The second trench has a depth deeper than that of the first trench. 1. A power semiconductor device comprising:an active region having a current flowing through a channel in the active region at the time of a turn-on operation of the power semiconductor device;a termination region disposed in the vicinity of the active region;a plurality of first trenches extending lengthwise in one direction in the active region; andat least one or more second trenches extending lengthwise in one direction in the termination region,wherein the second trench has a depth deeper than that of the first trench.2. The power semiconductor device of claim 1 , wherein the second trench has a width greater than that of the first trench.3. The power semiconductor device of claim 1 , wherein the second trench has an insulating material filled therein.4. The power semiconductor device of claim 1 , wherein the second trench includes an insulating layer formed on a surface thereof and a conductive material filled therein.5. The power semiconductor device of claim 4 , further comprising an metal emitter layer formed on the active region claim 4 ,wherein the second trench has the same potential as that of the metal emitter layer.6. The power semiconductor device of claim 1 , further comprising an electric field limiting region enclosing the second trenches and having a second conductive type.7. The power semiconductor device of claim 1 , wherein the second trenches be reduced in depth away from the active region.8. A power semiconductor device comprising:an active ...

Подробнее
Номер записи: 116
28-05-2015 дата публикации

POWER SEMICONDUCTOR DEVICE

Номер: US20150144994A1
Автор: JANG Chang Su, PARK Jae Hoon, SEO Dong Soo, SONG In Hyuk, Sung Jae Kyu
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A power semiconductor device may include: a first semiconductor layer having a first conductivity type; a second semiconductor layer formed on the first semiconductor layer, having a concentration of impurities higher than that of the first semiconductor layer, and having the first conductivity type; a third semiconductor layer formed on the second semiconductor layer and having a second conductivity type; a fourth semiconductor layer formed in an upper surface of the third semiconductor layer and having the first conductivity type; and trench gates penetrating from the fourth semiconductor layer into a portion of the first semiconductor layer and having gate insulating layers formed on surfaces thereof. The trench gates have a first gate, a second gate, and a third gate are sequentially disposed from a lower portion thereof, and the first gate, the second gate, and the third gate are insulated from each other by gate insulating films. 1. A power semiconductor device comprising:a first semiconductor layer of first conductivity type;a second semiconductor layer of the first conductivity type disposed on the first semiconductor layer, and having a concentration of impurities higher than that of the first semiconductor layer;a third semiconductor layer of second conductivity type disposed on the second semiconductor layer;a fourth semiconductor layer of the first conductivity type disposed in an upper surface of the third semiconductor layer; andtrench gates penetrating from the fourth semiconductor layer into a portion of the first semiconductor layer and having gate insulating layers disposed on surfaces thereof,wherein the trench gates have a first gate, a second gate, and a third gate sequentially disposed from a lower portion thereof,the first gate, the second gate, and the third gate being insulated from each other by gate insulating films.2. The power semiconductor device of claim 1 , wherein the first gate is formed in a position corresponding to a height of ...

Подробнее
Номер записи: 117
26-05-2016 дата публикации

SUBSTRATE FOR SURFACED ENHANCED RAMAN SCATTERING, FABRICATION METHOD FOR THE SAME AND ANALYZING METHOD USING THE SAME

Номер: US20160146737A1
Автор: Kim Chang Su, Kim Dong Ho, Park Sung Gyu
Принадлежит:

The present disclosure relates to a substrate for surface enhanced Raman scattering, a fabricating method for the same and an analyzing method using the same. The present disclosure may provide a substrate for surface enhanced Raman scattering having excellent surface enhanced Raman scattering effects by randomly stacking of Ag nanowires in a simple way by utilizing a substrate having a filtering function, and a method for efficiently analyzing a material to be analyzed using the same. 1. A substrate for surface enhanced Raman scattering comprising:a substrate comprising a plurality of pores; andmetal-containing nanowires configured not to pass through the pores and to be aggregated on the substrate,wherein the metal-containing nanowires form nanogaps configured to induce surface plasmon resonance with adjacent metal-containing nanowires.2. The substrate for surface enhanced Raman scattering of claim 1 , wherein each metal-containing nanowire has an irregular direction and is aggregated in a pre-determined thickness or above claim 1 , andthe pre-determined thickness is determined based on the thickness where increase in the Raman intensity of the substrate for surface enhanced Raman scattering becomes saturated.3. The substrate for surface enhanced Raman scattering of claim 1 , further comprising:an insulating film formed on the metal-containing nanowires; andmetal-containing nanoparticles formed on the insulating film and configured to form nanogaps inducing plasmon resonance by being spaced apart from each other.4. The substrate for surface enhanced Raman scattering of claim 3 , wherein the nanogaps inducing surface plasmon resonance are formed between the metal-containing nanoparticles and the metal-containing nanowires.5. The substrate for surface enhanced Raman scattering of claim 1 , wherein the substrate is selected one from the group consisting of glass fiber claim 1 , alumina claim 1 , Teflon (polytetrafluoroethylene claim 1 , PTFE) claim 1 , polycarbonate ...

Подробнее
Номер записи: 118
30-04-2020 дата публикации

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Номер: US20200135784A1
Автор: CHANG SU-HUA, CHIEN Volume, HUANG ZEN-FONG
Принадлежит:

A semiconductor structure includes a substrate, a barrier layer disposed over the substrate, a grid disposed over the barrier layer, and a first color filter disposed over the barrier layer. The semiconductor structure also includes a second color filter disposed over the substrate and laterally surrounded by and contacting the grid. The semiconductor structure further includes a dielectric layer disposed between the barrier layer and the substrate. The barrier layer includes an upper surface overlapping the grid and the first color filter and a bottom surface substantially level with a bottom surface of the second color filter. The dielectric layer includes a first portion overlapping a bottom surface of the first color filter and a second portion overlapping a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer. 1. A semiconductor structure , comprising:a substrate configured to receive an electromagnetic radiation;a barrier layer disposed over the substrate;a grid disposed over the barrier layer;a first color filter disposed over the barrier layer and configured to allow visible light in the electromagnetic radiation to pass through, the first color filter laterally surrounded by and contacting the grid;a second color filter disposed over the substrate and laterally surrounded by and contacting the grid, the second color filter also partially surrounded by the barrier layer; anda dielectric layer disposed between the barrier layer and the substrate,wherein the barrier layer comprises an upper surface overlapping the grid and an entirety of the first color filter and a bottom surface substantially level with a bottom surface of the second color filter, andwherein the dielectric layer comprises a first portion overlapping an entirety of a bottom surface of the first color filter and a second portion overlapping an entirety of a bottom ...

Подробнее
Номер записи: 119
25-05-2017 дата публикации

DECODING APPARATUS AND DECODING METHOD THEREOF

Номер: US20170150165A1
Автор: HAN Chang-su, Kim Myung-Ho, NA Sang-kwon, Park Chan-Sik, YOO Ki-won
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A decoding apparatus and a decoding method thereof are provided. The decoding apparatus includes a memory configured to store a reference image frame of a first definition that is decoded from a bit stream. The decoding apparatus further includes a decoder configured to determine, form the bit stream, a motion vector of a current block of a current image frame of a second definition, correct a size of the motion vector and a location of the current block based on a scaling factor, load, from the memory, a reference block that is the corrected motion vector away from the corrected location of the current block in the reference image frame, and decode the current image frame based on the reference block. 1. A decoding apparatus comprising:a memory configured to store a reference image frame of a first definition that is decoded from a bit stream; and determine, from the bit stream, a motion vector of a current block of a current image frame of a second definition;', 'correct a size of the motion vector and a location of the current block based on a scaling factor;', 'load, from the memory, a reference block that is the corrected motion vector away from the corrected location of the current block in the reference image frame; and', 'decode the current image frame based on the reference block., 'a decoder configured to2. The decoding apparatus according to claim 1 , wherein the second definition is greater than the first definition claim 1 , andthe scaling factor is a ratio of the first definition and the second definition.3. The decoding apparatus according to claim 1 , wherein the decoder is further configured to:determine coordinates of pixels of the current block as the location of the current block; andcorrect the coordinates based on the scaling factor to correct the location of the current block.4. The decoding apparatus according to claim 1 , wherein the decoder is further configured to:scale the reference block based on the scaling factor; anddecode the current ...

Подробнее
Номер записи: 120
21-08-2014 дата публикации

Negative active material, negative electrode, and lithium battery

Номер: US20140234710A1
Автор: Chang-Su Shin, Ha-Na Yoo, Jae-myung Kim, Kyu-Nam Joo, Sang-Eun Park, So-Ra Lee, Su-Kyung Lee, Ui-Song Do, Yu-Jeong Cho
Принадлежит: Samsung SDI Co Ltd

A negative active material includes a conductive unit bound in island-like form to silicon-based nanowires on a carbonaceous base. Such negative active material may improve the electrical conductivity of the silicon-based nanowires, and suppress separation of the silicon-based nanowires caused from volume expansion, and thus may improve lifetime characteristics of a lithium battery.

Подробнее
Номер записи: 121
21-08-2014 дата публикации

NEGATIVE ACTIVE MATERIAL, AND NEGATIVE ELECTRODE AND LITHIUM BATTERY EACH INCLUDING THE NEGATIVE ACTIVE MATERIAL

Номер: US20140234714A1
Автор: Cho Yu-Jeong, Do Ui-Song, Kim Jae-Myung, Lee So-Ra, Lee Su-Kyung, Park Sang-Eun, Shin Chang-Su
Принадлежит: Samsung SDI Co., Ltd.

A negative active material and a lithium battery are provided. The negative active material includes a composite core, and a coating layer formed on at least part of the composite core. The composite core includes a carbonaceous base and a metal/metalloid nanostructure disposed on the carbonaceous base. The coating layer includes a metal oxide coating layer and an amorphous carbonaceous coating layer. 1. A negative active material , comprising:a composite core comprising a carbonaceous base, and a metal or metalloid nanostructure on the carbonaceous base; anda coating layer formed on at least part of the composite core and comprising a metal oxide coating layer and an amorphous carbonaceous coating layer.2. The negative active material of claim 1 , wherein the metal oxide coating layer comprises an oxide of at least one metal selected from the group consisting of elements of Group 2 to Group 13 of the periodic table of elements.3. The negative active material of claim 1 , wherein the metal oxide coating layer comprises an oxide of at least one metal selected from the group consisting of zinc (Zn) claim 1 , zirconium (Zr) claim 1 , nickel (Ni) claim 1 , cobalt (Co) claim 1 , manganese (Mn) claim 1 , boron (B) claim 1 , magnesium (Mg) claim 1 , calcium (Ca) claim 1 , strontium (Sr) claim 1 , barium (Ba) claim 1 , titanium (Ti) claim 1 , vanadium (V) claim 1 , iron (Fe) claim 1 , copper (Cu) claim 1 , and aluminum (Al).4. The negative active material of claim 1 , wherein the metal oxide coating layer comprises a metal oxide represented by Formula I below:{'br': None, 'sub': a', 'b, 'MO\u2003\u2003'}wherein, in Formula 1, 1≦a≦4, 1≦b≦10, and M is at least one selected from the group consisting of zirconium (Zr), nickel (Ni), cobalt (Co), manganese (Mn), boron (B), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), titanium (Ti), vanadium (V), iron (Fe), copper (Cu), and aluminum (Al).5. The negative active material of claim 1 , wherein the metal oxide ...

Подробнее
Номер записи: 122
18-06-2015 дата публикации

POWER SEMICONDUCTOR DEVICE

Номер: US20150171198A1
Автор: JANG Chang Su, PARK Jae Hoon, SEO Dong Soo, SONG In Hyuk, UM Kee Ju
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; a termination region formed in the vicinity of the active region; a plurality of trenches formed in a length direction of the active region; and a hole accumulating region formed in the active region and below the channel and having a first conductivity type. A trench disposed at a boundary between the termination region and the active region has a depth shallower than that of a trench adjacent thereto. 1. A power semiconductor device comprising:an active region having a current flowing through a channel disposed therein at the time of a turn-on operation of the power semiconductor device;a termination region disposed in the vicinity of the active region;a plurality of trenches disposed in a length direction of the active region; anda hole accumulating region disposed in the active region and below the channel and having a first conductivity type,wherein a trench disposed at a boundary between the termination region and the active region has a depth shallower than that of a trench adjacent thereto.2. The power semiconductor device of claim 1 , wherein a hole accumulating region formed at the boundary between the termination region and the active region has a depth shallower than that of a hole accumulating region adjacent thereto.3. The power semiconductor device of claim 1 , further comprising an electric field limiting region formed in the termination region and having a second conductivity type.4. The power semiconductor device of claim 3 , wherein the electric field limiting region covers at least a portion of the trench positioned at the boundary between the termination region and the active region.5. The power semiconductor device of claim 3 , wherein the electric field limiting region covers at least a portion of a lower portion of the trench positioned at the boundary ...

Подробнее
Номер записи: 123
15-06-2017 дата публикации

FILM-TYPE SEMICONDUCTOR PACKAGES AND DISPLAY DEVICES HAVING THE SAME

Номер: US20170170166A1
Автор: Kim Chang-Su, Kim Han-Gu, KIM Young-Min, SONG Sung-jun
Принадлежит:

A film-type semiconductor package includes a semiconductor integrated circuit and a dummy metal pattern. The semiconductor integrated circuit is formed on a film and includes an electrostatic discharge (ESD) protection circuit. The dummy metal pattern is formed on the film and is electrically connected to the ESD protection circuit through a first wiring formed on the film. 1. A film-type semiconductor package , comprising:a semiconductor integrated circuit formed on a film, the semiconductor integrated circuit comprising an electrostatic discharge (ESD) protection circuit; anda dummy metal pattern formed on the film, wherein the dummy metal pattern is electrically connected to the ESD protection circuit through a first wiring formed on the film.2. The film-type semiconductor package of claim 1 , wherein the semiconductor integrated circuit further comprises a plurality of pads claim 1 , and communicates with an external device through a wiring pattern claim 1 ,wherein the wiring pattern is formed on the film and is coupled to the plurality of pads.3. The film-type semiconductor package of claim 2 , wherein the ESD protection circuit is coupled between a first pad and a second pad among the plurality of pads claim 2 , andthe dummy metal pattern is electrically connected to at least one of the first pad and the second pad through the first wiring.4. The film-type semiconductor package of claim 3 , wherein the first pad is a power supply pad to which a supply voltage is provided claim 3 , and the second pad is a ground pad to which a ground voltage is provided.5. The film-type semiconductor package of claim 3 , wherein the first pad is a data input/output pad through which data is transmitted claim 3 , and the second pad is a ground pad to which a ground voltage is provided.6. The film-type semiconductor package of claim 1 , wherein the semiconductor integrated circuit further comprises:a power supply pad to which a supply voltage is provided;a ground pad to which a ...

Подробнее
Номер записи: 124
25-06-2015 дата публикации

DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20150179825A1
Автор: JANG Chang Su, MO Kyu Hyun, SONG In-Hyuk, Sung Jae Kyu, Yoon Sun Jae
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A diode device may include a first conductivity type first semiconductor region, a second conductivity type second semiconductor region partially formed inside an upper portion of the first semiconductor region, and second conductivity type third semiconductor regions partially formed inside the upper portion of the first semiconductor region, formed on sides of the second semiconductor region, and having an impurity concentration higher than that of the second semiconductor region. 1. A diode device , comprising:a first conductivity type first semiconductor region;a second conductivity type second semiconductor region partially disposed inside of an upper portion of the first semiconductor region; andsecond conductivity type third semiconductor regions partially disposed inside of the upper portion of the first semiconductor region, disposed on sides of the second semiconductor region, and having an impurity concentration higher than that of the second semiconductor region.2. The diode device of claim 1 , further comprising an insulating layer formed on an upper portion of the first semiconductor region and on an upper portion of the third semiconductor region.3. The diode device of claim 2 , further comprising a first metal layer formed on an upper portion of the insulating layer and on an upper portion of the second semiconductor region.4. The diode device of claim 1 , further comprising a fourth semiconductor region formed between the first semiconductor region and the second semiconductor region and having an impurity concentration higher than that of the first semiconductor region.5. The diode device of claim 1 , further comprising a second metal layer formed below the first semiconductor region.6. A method of manufacturing a diode device claim 1 , comprising:preparing a first conductivity type first semiconductor region;implanting a second conductivity type impurity into an upper portion of the first semiconductor region to form a second semiconductor region ...

Подробнее
Номер записи: 125
25-06-2015 дата публикации

DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20150179826A1
Автор: JANG Chang Su, KIM Yoon Seong, MO Kyu Hyun, SEO Dong Soo, Sung Jae Kyu
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A diode device may include: a first semiconductor area having a first conductivity type; a second semiconductor area having a second conductivity type, provided on the first semiconductor area and having a uniform impurity density; a trench provided to pass through the second semiconductor area to contact the first semiconductor area; and a first metal layer provided on surfaces of the trench and the second semiconductor area. 1. A diode device , comprising:a first semiconductor area of first conductivity type;a second semiconductor area of second conductivity type provided on the first semiconductor area and having a uniform impurity density;a trench passing through the second semiconductor area to contact the first semiconductor area; anda first metal layer provided on surfaces of the trench and the second semiconductor area.2. The diode device of claim 1 , wherein the first metal layer forms a Schottky junction with the first semiconductor area and forms an Ohmic junction with the second semiconductor area.3. The diode device of claim 1 , wherein the second semiconductor area includes polysilicon.4. The diode device of claim 1 , further comprising a buffer area having a first conductivity type claim 1 , provided below the first semiconductor area and having a higher impurity density than the first semiconductor area.5. The diode device of claim 1 , further comprising a second metal layer provided below the first semiconductor area and forming an Ohmic junction with the first semiconductor area.6. A method of manufacturing a diode device claim 1 , the method comprising:providing a first semiconductor area of first conductivity type;growing a second semiconductor area of second conductivity type on the first semiconductor area by an epitaxial method;forming a trench contacting the first semiconductor area by etching the second semiconductor area; andforming a first metal layer on surfaces of the trench and the second semiconductor area by depositing a metal.7. The ...

Подробнее
Номер записи: 126
25-06-2015 дата публикации

Methods for managing radio resources between multiple radio modules and communications apparatus utilizing the same

Номер: US20150181469A1
Автор: Chia-Hsiang Hsu, Chia-Shun Wan, Chieh-Chao Liu, Chih-Shi Yee, Ching-Hwa Yu, Hsiao-Min CHEN, Shao-Wei Chen, Shih-Chang Su, Tsai-Yuan Hsu
Принадлежит: MediaTek Inc

Communications apparatus includes first and second radio modules and an antenna array coupled to the first and the second radio modules and includes multiple antennas. When the first and the second radio modules operate at the same time, the first radio module negotiates with a first communications device an amount of antenna(s) to be used by a first message, so that the first radio module operates with the amount of the antenna(s) and second radio module operates with at least one of the remaining antenna(s).

Подробнее
Номер записи: 127
22-06-2017 дата публикации

TEST BOARD FOR SEMICONDUCTOR DEVICE AND TEST SYSTEM INCLUDING THE SAME

Номер: US20170176508A1
Автор: Kim Chang Su, Kim Han Gu, KIM Young Min, SONG Sung Jun
Принадлежит:

A test board for a semiconductor device and a test board including the same are provided. A test board includes a substrate, a mounting pad which is formed on the substrate and on which a semiconductor chip is mounted and a test terminal group arranged on the substrate to be spaced apart from the mounting pad and electrically connected to the semiconductor chip by a pattern arranged on the substrate, wherein the semiconductor chip includes a first terminal and a second terminal for inputting/outputting signals, the test terminal group includes a first test terminal electrically connected to the first terminal and a second test terminal electrically connected to the second terminal, a first voltage is applied to the first terminal and the second terminal, and a stress signal that is caused by a second voltage is applied to the first test terminal. 1. A test board for a semiconductor device , comprising:a substrate;a mounting pad which is formed on the substrate and on which a semiconductor chip is mounted; anda test terminal group arranged on the substrate to be spaced apart from the mounting pad and electrically connected to the semiconductor chip by a pattern arranged on the substrate, wherein:the semiconductor chip includes a first terminal and a second terminal configured to input/output signals,the test terminal group includes a first test terminal electrically connected to the first terminal and a second test terminal electrically connected to the second terminal,both the first terminal and the second terminal are configured to receive a first voltage, andthe first test terminal is configured to receive a stress signal that is caused by a second voltage.2. The test board of claim 1 , wherein the stress signal has a first peak current having a value of 7.5 A at 0.8 ns claim 1 , and a second peak current having a value equal to or smaller than 1 A at 20 ns.3. The test board of claim 2 , wherein the first voltage is a ground voltage.4. The test board of claim 2 , ...

Подробнее
Номер записи: 128
06-06-2019 дата публикации

Polyhedron Type Display Device

Номер: US20190171062A1
Автор: CHANG Su-Jin, KIM Sun-Woong, Lee Dong-Seok, SON Yeong-Eun
Принадлежит:

A polyhedron type display device includes: a plurality of liquid crystal panels connected to each other to constitute a polyhedral shape; a light source housing at a center of mass of the polyhedral shape; a light source unit accommodated in the light source housing, the light source unit emitting a light to supply the light to the plurality of liquid crystal panels; a light source supporting pillar connecting and supporting the light source housing and the plurality of liquid crystal panels; a structure supporting pedestal supporting the light source supporting pillar; a supporting panel supporting the plurality of liquid crystal panels; a radiating pillar connected to the light source unit and emitting a heat of the light source unit; and a protecting cover covering and protecting the radiating pillar. 1. A polyhedron display device , comprising:a plurality of liquid crystal panels connected to each other to constitute a polyhedral shape;a light source housing at a center of mass of the polyhedral shape;a light source unit accommodated in the light source housing, the light source unit emitting a light to supply the light to the plurality of liquid crystal panels;a light source supporting pillar connecting and supporting the light source housing and the plurality of liquid crystal panels;a structure supporting pedestal supporting the light source supporting pillar;a supporting panel supporting the plurality of liquid crystal panels;a radiating pillar connected to the light source unit and emitting a heat of the light source unit; anda protecting cover covering and protecting the radiating pillar.2. The polyhedron display device of claim 1 , wherein each of the plurality of liquid crystal panels comprises:a first substrate facing into and spaced apart from a second substrate;a liquid crystal layer between the first substrate and the second substrate;a first polarizing plate and an optical sheet sequentially on an outer surface of the first substrate; anda second ...

Подробнее
Номер записи: 129
21-06-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: US20180175265A1
Автор: Choi Tae Young, KIM Jung Sung, PARK Chang Su, Park Jung Kyu
Принадлежит:

A semiconductor light emitting device includes: a package body having a cavity, and having a first wiring electrode and a second wiring electrode disposed on a bottom surface of the cavity; a light emitting diode (LED) chip having a first surface with a first electrode and a second electrode thereon, a second surface, and lateral surfaces, the LED chip being mounted in the cavity such that the first surface faces the bottom surface, a wavelength conversion film on the second surface of the LED chip, and including a first wavelength conversion material, and a reflective resin portion in the cavity that surrounds the LED chip. 1. A semiconductor light emitting device , comprising:a package body having a cavity surrounded by a side wall, and a first wiring electrode, and a second wiring electrode on a bottom surface of the cavity;a light emitting diode (LED) chip having a first surface with a first electrode and a second electrode thereon, a second surface opposing the first surface, and lateral surfaces between the first surface and the second surface, the LED chip being mounted in the cavity such that the first surface faces the bottom surface;conductive bumps connecting the first electrode and the second electrode to the first wiring electrode and the second wiring electrode, respectively;a wavelength conversion film on the second surface of the LED chip, and including a first wavelength conversion material;a light-transmitting bonding layer between the second surface of the LED chip and the wavelength conversion film to bond the LED chip to the wavelength conversion film;a reflective resin portion in the cavity to surround the LED chip and fill a space between the first surface of the LED chip and the bottom surface of the cavity; anda wavelength conversion resin layer on the wavelength conversion film and the reflective resin portion, and having a light-transmitting resin, the light-transmitting resin including a second wavelength conversion material.2. The ...

Подробнее
Номер записи: 130
06-06-2019 дата публикации

Electrostatic discharge (esd) protection circuit and integrated circuit including the same

Номер: US20190173278A1
Автор: Chang-Su Kim, Han-Gu Kim, Kyoung-Ki Jeon, Moon-Seok Yang, Sung-Pil Jang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes a transient-state detection circuit configured to generate a dynamic triggering signal based on a voltage change rate of a voltage on a first power rail; a voltage detection circuit configured to generate a static triggering signal based on the voltage on the first power rail; a trigger circuit configured to generate a discharge control signal based on the dynamic triggering signal and the static triggering signal; and a main discharge circuit configured to discharge an electric charge from the first power rail to a second power rail based on the discharge control signal.

Подробнее
Номер записи: 131
02-07-2015 дата публикации

Power semiconductor device

Номер: US20150187678A1
Автор: Chang Su Jang, In Hyuk Song, Jae Hoon Park, Kee Ju Um, Sun Jae Yoon
Принадлежит: Samsung Electro Mechanics Co Ltd

A power semiconductor device may include: a first conductivity-type first semiconductor layer; a second conductivity-type second semiconductor layer disposed above the first semiconductor layer; and a heat dissipation trench disposed to penetrate from an upper surface of the second semiconductor layer into a portion of the second semiconductor layer and having an insulating layer disposed on a surface thereof.

Подробнее
Номер записи: 132