НОВЫЙ МАТЕРИАЛ И СПОСОБ ЕГО ПРОИЗВОДСТВА

Изобретение относится к способу получения композиционного материала, который включает стадии взятия образца фосфора и окружения его слоем кремния, который включает множество частиц кремния, нагревания слоя кремния до температуры 900-1500°С, при этом часть фосфора испаряется. Затем проводится контактирование паров фосфора с частью слоя кремния с образованием расплавленного композиционного материала, включающего фосфор и кремний. Изобретение также относится к радиотерапевтическому продукту, который имеет уровень активности от 0,1 до 50 ГБк на грамм, при этом продукт получен указанным выше способом с дополнительной стадией облучения композиционного материала нейтронами с превращением некоторого количества фосфора в 32Р. Изобретение позволяет получать композиционный материал, имеющий однородный химический состав, высокие концентрации фосфора и низкий уровень примесей. 2 н. и 7 з.п. ф-лы, 8 ил.

СПОСОБ ПОЛУЧЕНИЯ ОПТИЧЕСКИ ПРОЗРАЧНЫХ МОНОКРИСТАЛЛОВ ТЕРБИЙ-ГАЛЛИЕВОГО ГРАНАТА

Изобретение относится к выращиванию монокристаллов гранатов и может быть использовано в лазерной технике, магнитной микроэлектронике (полупроводники, сегнетоэлектрики) и для ювелирных целей. Монокристаллы тербий-галлиевого граната получают методом Чохральского путем расплавления исходной шихты, включающей просветляющую кальцийсодержащую добавку, и последующего выращивания монокристалла из расплава на затравку. В качестве исходной шихты используют смесь оксидов тербия и галлия, в качестве кальцийсодержащей добавки - оксид или карбонат кальция, а после выращивания осуществляют отжиг кристалла в атмосфере водорода при 850-950°С в течение около 5 часов до исчезновения оранжевой окраски. Изобретение позволяет получать оптически прозрачные однородные кристаллы с коэффициентом поглощения 0,5·10-3 см-1.

СПОСОБ ПОЛУЧЕНИЯ ОБЪЕМНЫХ МОНОКРИСТАЛЛОВ КРЕМНИЯ Р-ТИПА

Изобретение относится к производству кремния для стабилитронов и подложек для эпитаксии. Сущность изобретения: в расплав кремния, содержащий примесь замещения бор в концентрации 3,6• 10-4 - 8,1•10-2 мас.%, вводят вторую примесь замещения алюминий в концентрации 3•10-4 - 3•10-2 мас.% по отношению к кремнию. Выращивание ведут методом Чохральского. 2 табл.

СПОСОБ ВЫДЕЛЕНИЯ ЧАСТИ СЛИТКА ВЫРАЩЕННОГО МОНОКРИСТАЛЛА КРЕМНИЯ С ЗАДАННОЙ КОНЦЕНТРАЦИЕЙ ПРИМЕСИ УГЛЕРОДА

... 1. Способ выделения части слитка выращенного монокристалла кремния с заданной концентрацией примеси углерода, включающий отделение нижней конусной части слитка, определение концентрации углерода на образовавшемся нижнем торце слитка и последующее отделение нижней части слитка с концентрацией углерода, превышающей заданную, отличающийся тем, что предварительно определяют массу загрузки шихты для выращивания слитка монокристалла, измеряют массу слитка от его начала до нижнего торца слитка, а указанное отделение части слитка осуществляют на расстоянии от нижнего торца равном: где С1- концентрация углерода на образовавшемся нижнем торце слитка; С2 - заданная концентрация примеси углерода с учетом доверительного интервала; M1- масса слитка от его начала до нижнего торца слитка; Мзагрузки - масса загрузки шихты для выращивания слитка монокристалла; к - эффективный коэффициент распределения примеси углерода; D - средний диаметр слитка; ρ - плотность кремния. 2. Способ по п. 1, отличающийся тем ...

СПОСОБ ПОЛУЧЕНИЯ СЦИНТИЛЛЯЦИОННОГО МОНОКРИСТАЛЛА ЛЮТЕЦИЙ-ИТТРИЕВОГО АЛЮМИНАТА

Способ получения монокристалла лютеций-иттриевого алюмината (LuX-Y1-X)AlO3, где х=0,5-0,95 по методу Чохральского вытягиванием из расплава из иридиевых тиглей на затравку из номинально чистого монокристалла алюмината иттрия YAlO3 и монокристалла алюмината иттрия с содержанием примеси редкоземельных ионов от 0,001 до 1 вес./%, при котором в исходную шихту входит примесь окисла металла церия Се в количестве, чтобы в готовом кристалле содержание упомянутого металла составило от 0,01 до 0,9 вес./%, а процесс выращивания монокристалла производят в газовой среде, состоящей из инертных газов с содержанием кислорода в пределах от 10-6 до 1 об./% при температуре расплава шихты от 1820 до 1980°С при скорости вытягивания затравки из расплава от 0,1 до 8,0 мм/ч со скоростью вращения затравки от 2,5 до 30 мин-1 и со скоростью охлаждения монокристалла после окончания процесса выращивания от 50 до 500°С/ч, отличающийся тем, что в исходную шихту входит примесь окисла металла циркония Zr в количестве, чтобы ...

Способ получения легированных монокристаллов германия п-типа

Фотохромный электрооптический материал

Изобретение относится к фотохромным материалам, обладающим высоким электрооптическим эффектом, которые могут быть использованы в устройствах обработки голографической информации в качестве функциональных сред на основе кристалла силикосилленита - BSO. Обеспечивает увеличение скорости окрашивания, коэффициента реверсивности и контраста в оптическом диапазоне 15000 - 16000 см-1. Материал содержит компоненты в количественном соотношении, соответствующем химической формуле кристалла BI12CUXSIO20-0,5X, где 0,06 ≤X≤0,2. Кристаллы выращивают методом Чохральского. Измерены спектры оптического пропускания. Достигнут абсолютный контраст ъ30%, относительный контраст 0,12 - 0,28, коэффициент реверсивности 0,78 - 0,84. 2 ил., 1 табл.

Способ выращивания монокристаллов на основе иттрийалюминиевого гранита

Способ получения монокристаллов молибдата свинца

Изобретение относится к способу получения монокристаллов молибдата свинца и позволяет увеличить размеры и улучшить качество монокристаллов. Исходный материал , полученный осаждением водных растворов парамолибдата аммония и уксусно-кислого свинца, взятых в стехио- метрическом соотношении, нагревают в тигле со скоростью 100-150°С/ч до плавления, выдерживают 20-24 ч, Затем вытягивают монокристалл со скоростью 0,25-2,00 мм/ч на затравку, вращающуюся со скоростью 12-24 об/мин, при наличии градиента температуры 0,5-3,0 С/см и охлаждают монокристалл со скоростью 10-30°С/ч. Вытягивание ведут с постоянным автоматическим весовым контролем . Для получения активных лазерных элементов к исходному материалу добавляют 3-4 мас.% оксида неодима. Получают монокристаллы диаметром до 70 мм. 2 з.п. ф-л ы.

Способ получения кремния

Изобретение относится к производству монокристаллов кремния и позволяет повысить выход годного при увеличении однородности распределения удельного сопротивления по длине монокристалла. Способ включает плавление кремния с добавкой предварительно синтезированного соединения GEBA или PBBA, или TIBA в кварцевом тигле и выращивание монокристалла из расплава. Кроме того, вместо соединения стехиометрического состава в шихту можно вводить соединение с избытком одного из его компонентов. Концентрация добавки в обоих случаях составляет 0,03-0,35 мас.%. Преимуществом способа является отсутствие необходимости проводить отжиг для получения нужного удельного сопротивления. 2 табл.

Halbleiterstruktur und Verfahren

Verfahren zum Herstellen eines Halbleiterbauelements, wobei das Verfahren umfasst: Kombinieren eines Halbleiterrohmaterials und eines leerstellenverstärkenden Rohmaterials, um eine kombinierte Rohmaterialmischung auszubilden; und Schmelzen der Rohmaterialmischung und Kristallisieren der dabei entstehenden Halbleiterschmelze zu einem Halbleiter-Ingot mit einer Lehrstellenkonzentration von 1010/cm3 bis 1015/cm3; Trennen eines Halbleiterwafers oder mehrerer Halbleiterwafer von dem Halbleiter-Ingot; Ausbilden von Isolierbereichen innerhalb eines der Halbleiterwafer durch Abscheiden eines dielektrischen Materials innerhalb eines Grabens in dem Halbleiterwafer; und Tempern des Halbleiterwafers mit dem dielektrischen Material, wobei der Halbleiterwafer in einer Umgebung von Wasserstoff, Helium, Argon oder Kombinationen derselben gehalten wird und das Tempern des dielektrischen Materials bulk micro defects innerhalb des Halbleiterwafers erzeugt, wobei das Tempern die Schritte aufweist: – Erhöhen ...

Verfahren zum Wachsenlassen eines Silizium-Einkristalls

Verfahren zum Wachsenlassen eines mit Kohlenstoff dotierten Silizium-Einkristalls, bei dem ein Silizium-Einkristall aus einer in einem Tiegel befindlichen Rohmaterialschmelze, der Kohlenstoff zugesetzt wurde, mittels des Czochralski-Verfahrens wachsen gelassen wird, wobei ein extrudiertes Material oder ein geformtes Material als Dotiermittel für die Zugabe des Kohlenstoffs zu einem Rohmaterial im Tiegel verwendet wird.

Verfahren zum Ziehen von spannungsfreien Einkristallen fast konstanter Aktivatorkonzentration aus einer Halbleiterschmelze

Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt

Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt, wobei polykristallines Silizium in einem Tiegel zu einer Schmelze aus Silizium geschmolzen wird, während ein Strom von Inertgas mit einer Durchflussrate auf das schmelzende polykristalline Silizium gerichtet wird, und der Einkristall gemäß der Czochralski-Methode aus der Schmelze gezogen wird, dadurch gekennzeichnet, dass die Durchflussrate des Inertgasstroms kontrolliert wird, um eine Konzentration von Kohlenstoff in der Schmelze einzustellen.

Semiconductor devices

... 755,456. Semi-conductor devices. RADIO CORPORATION OF AMERICA. April 23, 1954 [May 22, 1953], No. 11837/54. Class 37. A semi-conductor device comprises two regions of one conductivity-type with an intermediate zone of opposite conductivity type having variable conductivity along the line joining the two regions, the region of greatest conductivity being adjacent one of the two regions. Fig. 1 shows a transistor comprising emitter zone 12 and collector zone 16 of P-type material, and a base zone comprising a thinhigh-conductivity portion 18 and a lowerconductivity portion 20 both of N-type material. The base electrode is connected to portion 18. The arrangement provides low base resistance, low emitter input capacitance (due to the short diffusion path provided by the thin portion 18) and relatively high collector breakdown voltage (due to the high resistivity and space charge layer in portion 20). The semiconductor body may be prepared by successively alloying and diffusing donor and acceptor ...

New material and method of fabrication therefor

Transistor crystals

A method of growing a PNP germanium or NPN silicon body for transistors (see Group XXXVI) comprises the steps of preparing a melt of the semiconductor containing an excess of donor (or acceptor) impurity, growing part of the melt on to a seed crystal by the pulling technique, adding donor and acceptor impurities simultaneously to the remaining melt, and continuing growth on to the seed. The relative amounts, segregation coefficients, and diffusion constants of the added impurities are so chosen that the material crystallized from the melt is of the same conductivity type throughout but so that during the second stage of growth the acceptor (donor) impurity diffuses into the material grown in the first stage to produce a region of opposite conductivity type at the interface. In one example a seed crystal is drawn at 940 DEG C. from a melt of germanium doped with gallium. When half the melt has grown into a P type crystal withdrawal is stopped and a germanium-arsenic-gallium alloy added to ...

Improvements in or relating to the production of semi-conductor bodies

... A molten mass of semi-conductor is progressively solidified in a continuously evacuated enclosure, the loss by evaporation of a significant impurity being made good by passing vapour of the impurity from a separate source into contact with the molten material. In the Figure silicon is kept in the crucible 7 at a temperature electrically regulated to be 30 DEG C. above the melting point, the whole vessel being evacuated to 10-5 to 10-6 mm. mercury via the pipe 5. After about an hour the impurities have evaporated and a seed crystal 30 is dipped into the melt and slowly raised to draw up the silicon in the form of a single crystal. To ensure that this is of low-resistivity n-type, phosphorus vapour is introduced from the bulb 27 via the tube 25 throughout the growth of the crystal. During the previous evaporation of impurities phosphorus is prevented from entering by cooling the bulb 27 in liquid air. Specification 779,179, [Group XXXVI], is referred to.

METHOD FOR PRODUCING SINGLE CRYSTAL GADOLINIUM GALLIUM

IMPROVED SILICON MATERIAL FROM THE TYP-N FOR EPITAXY SUBSTRATE AND PROCEDURE TO ITS PRODUCTION

SINGLE-CRYSTAL JUWELIERMATERIAL ON THE BASIS OF ALUMINUM SHELLS

In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon

DOPED BERYLLIUM LANTHANATE CRYSTALS

Verfahren zur Herstellung von Halbleiterkörpern mit aneinandergrenzenden Zonen verschiedener Leitfähigkeit

Procédé de fabrication de cristaux de germanium dopés

Verfahren zum Herstellen einer Vielzahl von Halbleiteranordnungen

Verfahren zur Herstellung eines Halbleitermaterials im Dampf eines Elementes

Verfahren zur Herstellung von p-n-p-Germanium- und n-p-n-Siliziumflächentransistoren und nach diesem Verfahren hergestellter Flächentransistor

SINGLE-CRYSTAL JUWELIERMATERIAL ON THE BASIS OF ALUMINUM SHELLS.

СПОСОБ ПОЛУЧЕНИЯ МОНОКРИСТАЛЛОВ ЙОДИДА ЦЕЗИЯ (ВАРИАНТЫ)

Изобретение относится к получению сцинтилляционных материалов на основе галогенидов щелочных элементов, которые широко используются в радиационном приборостроении. Изобретение обеспечивает увеличение скорости сцинтиллятора на основе йодида цезия за счет уменьшения части медленного компонента сцинтилляционного импульса путем введения в ростовый расплав восстанавливаемого агента в виде металлического циркония или выращиванием кристалла в циркониевом тигле. Площадь поверхности соприкосновения циркония с расплавом определяют из соответственного соотношения. Обработка расплава цирконием приводит к снижению содержания в расплаве и, соответственно в получаемом кристалле, оксигенсодержащих примесей, которые ухудшают быстродействие сцинтиллятора на основе йодида цезия.

METHOD FOR A PART OF SILICON MONOCRYSTAL GROWN WITH PRESCRIBED CONCENTRATION OF CARBON DOPE SEPARATION

掺钕硼酸镧氧钙激光晶体及其制备方法和用途

The invention is an lanthanum oxygen-calcium neodymium borate-doping laser crystal and its making method as well as its application, relating to the artificial crystal field. It belongs to a monoclinic system, space group is Cm, cell parameters are an equal to 8.1732 angstrom, b equal to 16.0860 angstrom, c equal to 3.6268 angstrom, beta equal to 101.40 deg., Z equal to 2, V equal to 467.4229 cu angstrom, and refractive index equal to 1.72. It adopts pull method (Czochralski method) to grow a high-quality, large-size lanthanum oxygen- calcium neodymium borate (Nd3plus : LaCa4O(BO3)3)-doping crystal at a crystal speed of 5-30 r/m and at a pull rate of 0.5-2mm/hr under 1410 deg.C. It is a new type laser crystal and has a nonlinear optical performance at the same time.

以单质粉末为脱氧剂的掺铊碘化铯晶体生长技术

The method according to the invention utilizes high purity carbon, silicon or germanium single element powder as deoxidizing agent and using CsI polycrystalline powder or CsI (Tl) crystal blocks as growth raw material, wherein the method comprises, drying and mixing homogeneously, sealing in platinum or quartz glass crucible, carrying out crystal growth by using Bridgman method. The invention realizes the growth of CsI (Tl) crystal with high grade of transparency and high light output under non-vacuum condition.

PROCESS OF DOPING Of a MASS MELTED FOR the GROWTH OF CRYSTALS, IN PARTICULAR OF SILICON, IN DENDRITIC RIBBONS AND CRYSTALS OBTAINED USING THIS PROCESS

Improvement with the machines of pulling of the crystals of semiconductor

MONOCRYSTAL OF SILICATE Of ELEMENT OF RARE EARTHS AND SCINTILLATOR the CONTAINER

L'invention concerne un monocristal d'un silicate d'un élément des terres rares, qui contient de l'aluminium en une quantité supérieure à 0,4 ppm et d'au plus 50 ppm et/ou du fer en une quantité supérieure à 0,1 ppm et d'au plus 50 ppm et présente un facteur de transmission de la lumière, déterminé à une longueur d'onde de 450 nm, d'au moins 75 %, et un scintillateur qui comprend ce monocristal.

니오브산 리튬 단결정 기판과 그 제조 방법

... [과제] 온도나 시간 등에 관한 처리 조건의 관리가 용이하며, 체적저항값의 면 내 분포가 극히 적은 니오브산 리튬(LN) 기판과 그 제조 방법을 제공한다. [해결 수단] 쵸크랄스키법으로 육성한 LN 단결정을 사용하여 LN 기판을 제조하는 방법으로, 단결정 중의 Fe 농도가 1000질량ppm을 초과하고, 2000질량ppm 이하이며, 또한, 기판의 상태로 가공된 LN 단결정을 Al 분말 혹은 Al과 Al2O3의 혼합 분말에 묻어 넣고, 450℃ 이상, 550℃ 미만의 온도에서 열처리하여 체적저항률이 1×1010Ω·cm를 초과하고, 2×1012Ω·cm 이하의 범위로 제어된 니오브산 리튬 단결정 기판을 제조하는 것을 특징으로 한다.

Method for Manufacturing Silicon Single Crystal Ingot

METHOD FOR MANUFACTURING SINGLE CRYSTAL

An evaporation rate formula for calculating a dopant evaporation rate is derived by taking into account influence of segregation of a single crystal (6) during manufacture wherein a single crystal pulling apparatus (1) is used, an evaporation area of a volatile dopant and influence of pulling speed. In prescribed timing during pulling, a gas flow quantity to a chamber (30) and pressure inside a furnace are controlled so that a cumulative dopant evaporation quantity calculated from the evaporation rate formula is a prescribed quantity. Thus, a difference between a resistivity profile of the single crystal (6) predicted based on the evaporation rate formula and an actual resistivity profile is reduced. Furthermore, since a volatile dopant is not added afterward, increase of load on an operator, increase of manufacture time, increase of amorphous crystal adhered inside the chamber (30), disturbance in single crystallization and increase of load for cleaning inside the chamber (30) are suppressed ...

SILICON SINGLE CRYSTAL PULL-UP APPARATUS AND PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL

Disclosed is a silicon single crystal pull-up apparatus that can grow a silicon single crystal having a desired electrical resistivity, to which a sublimable dopant has been reliably added, regardless of the length of the time necessary for the formation of a first half part of a straight body part in a silicon single crystal. Also disclosed is a process for producing a silicon single crystal. The silicon single crystal pull-up apparatus pulls up a silicon single crystal from a melt by a Czochralski method. The silicon single crystal pull-up apparatus comprises a pull-up furnace, a sample chamber that is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding mechanism that thermally shields the pull-up furnace and the sample chamber, and supply means that, after the release of shielding of the shielding mechanism, supplies the sublimable dopant into the melt.

METHOD FOR PULLING A SINGLE CRYSTAL OF SILICON IN ACCORDANCE WITH THE CZOCHRALSKI METHOD

The invention relates to a method for pulling from a melt a single crystal of silicon in accordance with the Czochralski method, the single crystal having a resistivity of not more than 20 mΩcm, the method comprising: pulling a first portion of a thin neck at a first pulling speed, because of which the diameter of the first portion of the thin neck tapers, in comparison with the diameter of a seed crystal, at a rate of not less than 0.3 mm per mm of length of the thin neck to a target diameter of not more than 5 mm; pulling a second portion of a thin neck at a second pulling speed of less than 0.2 mm/min over a time period of not less than 3 min, without the diameter of the second portion of the thin neck increasing to more than 5.5 mm; and pulling a third portion of the thin neck at a third pulling speed of more than 2 mm/min.

МОНОКРИСТАЛЛ СО СТРУКТУРОЙ ГРАНАТА ДЛЯ СЦИНТИЛЛЯЦИОННЫХ ДАТЧИКОВ И СПОСОБ ЕГО ПОЛУЧЕНИЯ

... Изобретение относится к сцинтилляционным неорганическим оксидным монокристаллам со структурой граната, содержащим церий и солегированным титаном и элементами второй группы. Изобретение позволяет увеличить выход сцинтилляций и повысить энергетическое разрешение сцинтилляционных детекторов при регистрации гамма-квантов. Технический результат достигается за счет того, что монокристалл со структурой граната солегирован церием, титаном и элементами второй группы. Данный монокристалл получают методом Чохральского.

NEW MATERIAL AND METHOD OF FABRICATION THEREFOR

The present invention concerns new methods of fabricating a silicon material comprising phosphorus. The methods allow high levels of phosphorus to be combined with the silicon. In one aspect of the invention a sample of phosphorus is surrounded with a sample of silicon. At least some of the phosphorus is then vaporised and caused to interact with the silicon.

CONTINUOUSLY PULLED SINGLE CRYSTAL SILICON INGOTS

A method for producing single crystal ingots continuously by forming a molten body of silicon metal of two feedstocks of silicon, one feedstock containing a predetermined level of dopant; continuously drawing a single crystal ingot of doped silicon from said molten body of silicon, said ingot being characterized in that the concentration of dopant is uniform along the length of the ingot, while continuously feeding said feedstocks into said molten body of silicon to thereby maintain the concentration of dopant uniform in said body during the drawing of the single crystal therefrom.

Crystal pulling apparatus and crystal pulling method

A crystal pulling apparatus of double structure crucible has a crucible body which is divided into inner and outer chambers by a cylindrical partition wall coaxially disposed in the crucible body. A melt supplying path used to supply melt from the outer chamber of the crucible to the inner chamber in which the crystal is pulled is formed of a small through hole formed in the partition wall or the small through hole and a pipe-like passage formed in communication with small through hole. The radius of the inner chamber of the double structure crucible has a specified relation determined by the segregation coefficient of dopant impurity with respect to the radius of the outer chamber. This is, the radius of the inner chamber is set substantially equal to 2ROOT k times the radius of the outer chamber when the segregation coefficient of the dopant impurity is k. In the crystal pulling apparatus with the double structure crucible, a small chamber for introducing dopant is disposed in the outer ...

METHOD FOR PREPARING MONOCRYSTALLINE SILICON AND SOLAR CELL AND PHOTOVOLTAIC MODULE WITH MONOCRYSTALLINE SILICON

Provided is a method for preparing a gallium- and nitrogen-doped monocrystalline silicon using a Czochralski process, including: introducing a doping gas at least including a first amount of nitrogen into a molten mixture in a single crystal furnace; withdrawing a seed from the molten mixture while introducing the doping gas including a second amount of nitrogen into the molten mixture, a second ratio of the second amount of nitrogen to the doping gas being smaller than the first ratio; and upon occurrence of a shoulder of the monocrystalline silicon rod, adjusting the second amount of nitrogen to a third amount in such a manner that a third ratio of the third amount of nitrogen to the doping gas is greater than the second ratio, to form a monocrystalline silicon rod. A solar cell and a photovoltaic module including a gallium- and nitrogen-doped silicon wafer prepared therefrom are also provided.

SEMICONDUCTOR DEVICE, SILICON WAFER AND METHOD OF MANUFACTURING A SILICON WAFER

A method of manufacturing is provided that includes providing an n-type silicon wafer, the n-type silicon wafer including n-type dopants partially compensated 20% to 80% by p-type dopants, where a net n-type doping concentration of the n-type silicon wafer is in a range from 1×1013 cm−3 to 1×1015 cm−3; forming hydrogen related donors in the n-type silicon wafer by irradiating the n-type silicon wafer with protons; and annealing the n-type silicon wafer after forming the hydrogen related donors.

Manufacturing method of silicon monocrystal

A manufacturing method of a silicon monocrystal uses a monocrystal pulling-up apparatus including: a chamber; a crucible disposed in the chamber and configured to receive dopant-added melt; a pulling-up portion that pulls up a seed crystal after the seed crystal is in contact with the dopant-added melt; a cooler disposed above the crucible to cool a monocrystal that is being grown; and a magnetic field applying unit disposed outside the chamber to apply a horizontal magnetic field to the dopant-added melt. The method includes: during a formation of a shoulder of the silicon monocrystal, starting the formation while moving the cooler downward; stopping the cooler from moving downward at a stop position before a top of the shoulder reaches a level of a lower end of the cooler; and continuing the formation of the shoulder while the cooler is kept at the stop position.

FURNACE FOR CRYSTALLIZING AN INGOT MADE OF OXYGEN-ENRICHED SEMICONDUCTOR MATERIAL

METHOD AND DEVICE FOR PRODUCING A SINGLE CRYSTAL OF SILICON DOPED WITH N-TYPE DOPANT

Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silizium, der mit Dotierstoff vom n-Typ dotiert ist und in einem zylindrischen Abschnitt einen spezifischen elektrischen Widerstand von nicht mehr als 2mOhmcm aufweist, durch Ziehen des Einkristalls gemäß der CZ-Methode aus einer Schmelze, die in einem Tiegel enthalten ist. Das Verfahren umfasst im Verlauf des Ziehens des zylindrischen Abschnitts des Einkristalls das Zuführen eines Gasstroms enthaltend gasförmigen Dotierstoff zu einer Oberfläche der Schmelze, und ist dadurch gekennzeichnet, dass der Gasstrom in einem Rohrleitungssystem in eine Ziehkammer und durch einen Hitzeschild, der den wachsenden Einkristall umgibt, oder entlang einer äußeren Oberfläche des Hitzeschilds, bis zu einem Ringkanal an einem unteren Ende des Hitzeschilds und von dort durch Düsen zur Oberfläche der Schmelze geleitet wird.

LITHIUM NIOBATE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME

To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 350°C or more and less than 450°C, to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of more than 1×1010 Ω·cm to 2×1012 Ω·cm or less.

SILICON INGOT HAVING UNIFORM MULTIPLE DOPANTS AND METHOD AND APPARATUS FOR PRODUCING SAME

Improved method for growing silicon crystal

In an improved Czochralski process for growing silicon crystals, wherein a single-crystal silicon seed is pulled from a molten silicon source to grow the crystal therefrom, a pre-oxidized arsenic dopant is added to the molten silicon source to alter an electrical property of the grown crystal. The pre-oxidized arsenic dopant includes granular particles of metallic arsenic having a surface film of arsenic oxide, the surface film having a thickness of ten microns to one millimeter. After doping, the molten silicon source is moved from the grown crystal, and an applied temperature is increased to burn excess pre-oxidized dopant. ...

Process for making a crystalline article from a melt

PRODUCTION OF SILICON SINGLE CRYSTAL AND SEED CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal, capable of improving mechanical strength of a seed drawing part and pulling up a single crystal of continuous length having a large diameter and to obtain a seed crystal. SOLUTION: In this method for producing a single crystal of silicon by a Czochralski method in which seed drawing is carried out while a seed crystal 1 is brought into contact with a silicon melt and pulled up and then the single crystal of silicon is grown, a seed crystal having a dopant concentration of 2.7×1017 atoms/cm3 and ≤1.4×1019 atoms/cm3 is used as the seed crystal and a silicon melt having a dopant concentration of ≥2×1017 atoms/cm3 and ≤2×1019 atoms/cm3 is used as the silicon melt. This seed crystal having the dopant concentration is obtained by a Czochralski method. COPYRIGHT: (C)1997,JPO ...

СПОСОБ ПОЛУЧЕНИЯ КРЕМНИЯ, ЛЕГИРОВАННОГО СУРЬМОЙ

Изобретение относится к производству кремния, легированного сурьмой, широко применяемого в качестве подложек для эпитаксии. Сущность изобретения: в расплав кремния, содержащего легирующую примесь сурьму в концентрациях 0,3-1,4 мас.%, вводят вторую примесь - германий нелегированный или легированный изовалентной примесью или элементом V группы, в концентрациях 0,08-1,8 мас. % по отношению к кремнию. Выращивание ведут методом Чохральского. 1 табл.

СПОСОБ ПОЛУЧЕНИЯ ОДНОРОДНО ЛЕГИРОВАННЫХ МОНОКРИСТАЛЛОВ КРЕМНИЯ

Изобретение относится к выращиванию монокристаллов кремния методом Чохральского с последующим их применением при изготовлении полупроводниковых приборов, в частности мощных и силовых транзисторов, силовых диодов, тиристоров и т. д., и позволяет повысить выход в годную продукцию как при выращивании монокристаллического кремния, так и при изготовлении полупроводниковых приборов на основе такого кремния. Это достигается тем, что при выращивании монокристалла проводят частичное легирование кремния фосфором, а долегирование до заданного уровня удельного электрического сопротивления (УЭС) осуществляют термодонорами путем отжига кремния или 350 - 500oС, совмещая или сочетая его с температурными обработками, содержащими эти температуры в цикле изготовления прибора, причем содержание и распределение доноров, обусловленных легированием фосфором, а также содержание и распределение термодоноров выбирают таким образом, чтобы суммарная концентрация доноров в каждой точке монокристалла кремния в готовых ...

УСТРОЙСТВО ДЛЯ ВЫРАЩИВАНИЯ МОНОКРИСТАЛЛОВ АРСЕНИДА ГАЛЛИЯ МЕТОДОМ ЧОХРАЛЬСКОГО

Изобретение относится к оборудованию для выращивания монокристаллов арсенида галлия, являющихся перспективными для использования в микроэлектронике, солнечной энергетике и ИК-оптике. Устройство для выращивания монокристаллов арсенида галлия методом Чохральского включает ростовую водоохлаждаемую камеру с установленным внутри камеры тиглем с расплавом, вокруг стенок которого установлен графитовый нагреватель штакетного типа с расположенным вокруг него индуктором, который выполнен из трех графитовых катушек А,В,С, соосно расположенных одна над другой, каждая из которых выполнена в виде 4 графитовых колец 14 прямоугольного сечения с прорезами, ступенчато соединенных в витки графитовыми вставками 16 и скрепленными шпильками 17 из композитного материала, соединяющими все 12 колец в единую конструкцию, при этом между графитовыми кольцами 14 катушек А, В, С установлены электроизоляционные керамические вставки 15, к началам катушек А, В, С присоединены композитные планки, подключенные к токовводам ...

СПОСОБ ПОЛУЧЕНИЯ КРУПНОГАБАРИТНЫХ МОНОКРИСТАЛЛОВ АНТИМОНИДА ГАЛЛИЯ

Изобретение относится к области получения полупроводниковых материалов, а именно к получению монокристаллов антимонида галлия, которые используются в качестве подложечного материала в изопериодных гетероструктурах на основе тройных и четверных твердых растворов в системах Al-Ga-As-Sb и In-Ga-As-Sb, позволяющих создавать широкую гамму оптоэлектронных приборов (источников и приемников излучения на спектральный диапазон 1,3-2,5 мкм). Способ включает синтез и выращивание монокристалла методом Чохральского в атмосфере водорода на затравку, ориентированную в кристаллографическом направлении [100], при этом синтез и получение монокристалла проводят в едином технологическом процессе со скоростью протока особо чистого водорода в интервале 80-100 л/час и времени выдержки расплава на стадии синтеза при температуре 930-940°С в течение 35-40 мин. Изобретение позволяет получать совершенные крупногабаритные монокристаллы антимонида галлия диаметром 60-65 мм. 1 табл.

СПОСОБ ПОЛУЧЕНИЯ СЦИНТИЛЛЯЦИОННЫХ МОНОКРИСТАЛЛОВ ВОЛЬФРАМАТА СВИНЦА

Изобретение относится к способам получения кристаллов, а именно к способу получения монокристаллов вольфрамата свинца, и может быть использовано при изготовлении сцинтилляционных элементов. Сущность изобретения: способ включает вытягивание монокристаллов из расплава, содержащего оксиды свинца и вольфрама в присутствии добавок легирующих элементов, в газовой среде с последующим отжигом выращенных монокристаллов в атмосфере чистого инертного газа при давлении 0,8-1,5 атм и температуре 780-950oС. Изобретение позволяет повысить радиационную стойкость сцинтилляционных монокристаллов вольфрамата свинца PbWO4 к ионизирующим излучениям для расширения области их применения. 6 ил., 1 табл.

Способ получения кремния, легированного сурьмой

Способ получения кремния, легированного сурьмой, включающий выращивание из расплава, содержащего две примеси, отличающийся тем, что в расплав, содержащий сурьму в концентрациях 0,3-1,4 мас.%, вводят вторую примесь германий, нелегированный, легированный изовалентной примесью, элементом пятой группы, в концентрациях 0,08-0, 18 мас.% по отношению к кремнию.

Способ выращивания монокристаллов Cd1-xZnxTe, где 0≤x≤1, на затравку при высоком давлении инертного газа

СЦИНТИЛЛЯЦИОННЫЙ МАТЕРИАЛ И СПОСОБ ЕГО ПОЛУЧЕНИЯ

Изобретение относится к сцинтилляционным неорганическим оксидным монокристаллам со структурой граната, содержащим гадолиний, иттрий, церий, бериллий и солегированным не менее чем одним элементом второй группы из Mg, Са, Sr. Изобретение позволяет увеличить выход сцинтилляций, уменьшить его температурную зависимость, укоротить кинетику сцинтилляций и повысить энергетическое разрешение сцинтилляционных детекторов при регистрации ионизирующего излучения. Технический результат достигается за счет того, что включающий иттрий и гадолиний монокристалл со структурой граната легирован церием и бериллием и одним из элементов второй группы Ва, или Sr, или Са в заданном соотношении. Данный монокристалл получают методом Чохральского с последующим изотермическим отжигом. 2 н. и 8 з.п. ф-лы, 2 табл.

СПОСОБ ПОЛУЧЕНИЯ ОПТИЧЕСКИ ПРОЗРАЧНЫХ МОНОКРИСТАЛЛОВ ГРАНАТА

Изобретение относится к выращиванию монокристаллов тербий-скандий-алюминиевого граната и может быть использовано в магнитной микроэлектронике для сцинтилляторной и лазерной техники, в частности для создания изоляторов Фарадея для лазерного излучения высокой средней по времени мощности и высокой энергии в импульсе. Монокристаллы граната получают методом Чохральского путем расплавления исходной шихты, включающей кальцийсодержащую добавку, в качестве которой используют оксид или карбонат кальция, и выращивания монокристалла из расплава на ориентированную затравку диаметром 2-8 мм при скорости вращения кристалла 2-10 об/мин с последующим его отжигом в атмосфере водорода при 850-950°C порядка 5 ч до исчезновения оранжевой окраски, при этом вытягивание кристаллов на ориентированную затравку осуществляют со скоростью 0,5-2 мм/ч, а в качестве исходной шихты используют смесь оксидов тербия, скандия и алюминия при следующем соотношении компонентов, мас.%: оксид тербия - 65,85-66,98, оксид алюминия ...

VORRICHTUNG ZUM ZIEHEN VON HALBLEITERKRISTALLEN AUS EINER SCHMELZE

VERBESSERTER SILIZIUM WERKSTOFF VOM TYP-N FÜR EPITAXIE-SUBSTRAT UND VERFAHREN ZU SEINER HERSTELLUNG

Dotierungsmittel-Injektionsverfahren und Dotierungsvorrichtung

Dotierungsmittel-Injektionsverfahren zum Dotieren einer Halbleiterschmelze mit Germanium (Ge), wobei das Dotierungsmittel-Injektionsverfahren umfasst: Laden des Ge in einem festen Zustand in eine Dotierungsvorrichtung, die umfasst: eine Dotierungsmittelhalterung zum Halten des Ge, das bei einer normalen Temperatur fest ist und sich in der Nähe der Oberfläche der Halbleiterschmelze verflüssigt, wobei die Dotierungsmittelhalterung ein Verbindungsloch aufweist, um das verflüssigte Ge nach unten auszugeben; einen Abdeckungsteil zum Abdecken des durch die Dotierungsmittelhalterung gehaltenen Ge; und eine Lüftungsöffnung an dem Abdeckungsteil, die eine Verbindung nach außen herstellt, Verflüssigen des Ge, das in dem festen Zustand in die Dotierungsvorrichtung geladen wird, während die Dotierungsvorrichtung auf einer vorbestimmten Höhe über der Oberfläche der Halbleiterschmelze gehalten wird, und Dotieren der Halbleiterschmelze mit dem aus dem Verbindungsloch fließenden verflüssigten Ge.

VERFAHREN ZUR HERSTELLUNG VON EINKRISTALLINEN III-V SEMI-ISOLATOREN UND ANWENDUNG DIESER SEMI-ISOLATOREN.

Semiconducting highly indium doped silicon prodn. - by doping melt with indium alloy to reduce indium vapour pressure and drawing

Prodn. of semiconducting, highly In-doped Si (I) entails first producing a metallic alloy (II) contg. In, then fusing this with Si in a crucible and drawing a highly doped Si rod or bar from this. Pref. (II) is an alloy of In (1 pt.) with Au (3 pts.), Ag (5 pts.), Sn (3 pts.) or Si (9 pts.). In is incorporated in a concn. of ca. 10 exp. 19 or 10 exp. 20 In atoms/cm3. Ar under slight over-pressure is used as protective gas. (I) is specified for making opto-electronic devices and IR sensors. The use of (II) as dopant greatly reduces the In vapour pressure and hence increases the possible In concn.

BLEACHING IMPROVING COMPOSITION

METHOD FOR PRODUCING R-PLANE SINGLE CRYSTAL ALPHA ALUMINA

... 1515543 Unicrystalline -Al 2 O 3 UNION CARBIDE CORP 27 June 1975 [28 June 1974] 27222/75 Heading C1A Massive unicrystalline -Al 2 O 3 is produced by:-(i) melting alumina by heating it to at least 2040‹C with at least one oxide selected from the oxides of Cr, Fe and Mg, the aggregate of the oxides being sufficient to provide at least 90 ppm by wt. of metal ion and sufficient to provide a unicrystalline product of substantially circular cross-section; (ii) inserting a seed rod of unicrystalline -Al 2 O 3 having an orientation such that its longitudinal axis is normal to an R-plane of the seed rod into the melt; (iii) maintaining an atmosphere over the melt which is substantially chemically inert to the melt; (iv) withdrawing the seed rod from the melt such that alumina is solidified and crystallized on the seed rod to form a massive unicrystalline alpha-alumina product of increasing length and substantially circular in cross-section having a growth axis common with the longitudinal axis of ...

Semiconductor devices

An alloy consisting of 99.9% by weight gold and 0.1% boron is used in the manufacture of semi-conductor devices (see Group XXXVI). Specification 889,058 is referred to.

Doping Ga/As single crystal with boron

GaAs single crystals doped with boron and having a lowered dislocation density are grown from a GaAs melt covered with B2O3 melt as a liquid encapsulant. The method comprises using a crucible made of a material selected from the group consisting of PBN, AlN and Al2O3 as a crucible for holding the GaAs melt, adding 0.25 to 0.95 atomic percent of boron to the GaAs melt under conditions such that the residual oxygen quantity is at most 5x10-2 mole percent to the GaAs melt, and thereby adjusting the concentration of boron in the grown crystal to 2x1018 to 1x1019 atoms per cm3. The method is applied to an LE-VB method and an LE-VGF method as well as an LEC method.

ALUMINA MATERIAL FOR THE OPTICAL DATA STORAGE

Monocrystalline jewellery material based on aluminium garnets

A crystalline jewellery material based on aluminium garnets, which contains two colouring additives, of which one is chosen from europium in a quantity of from 10-3 to 3% by mass or ytterbium in a quantity of from 0.1 to 61.3% by mass, and of which the other is chosen from zirconium or silicon in a quantity of from 10-4 to 1% by mass or hafnium in a quantity of from 10-3 to 3% by mass. The said material has a colour varying uniformly from green to violet and has the following general formula I: in which Re stands for Y, Dy, Ho, Er, Tm, Lu; A for Eu, Yb and B for Zr, Hf, and the following conditions are satisfied: for A = Yb, 0 less than or equal to x less than or equal to 2.996; for A = Eu, 0 less than or equal to x less than or equal to 0.17; 0 less than or equal to y less than or equal to 0.144; 0 less than or equal to z less than or equal to 0.2; x + 2y + z less than or equal to 3; y and z not simultaneously equal to zero. ...

PROCEDURE FOR THE PRODUCTION OF A CRYSTALLINE BODY FROM THE MELT.

METHOD FOR DOPING A MELT AND CRYSTALS GROWN THEREFROM

ALUMINUM OXIDE MATERIAL FOR OPTICAL DATA STORAGE

The present invention provides aluminum oxide crystalline materials including dopants and oxygen vacancy defects and methods of making such crystalline materials. The crystalline materials of the present invention have particular utility in optical data storage applications.

A P-type dopant and its preparation method

PROCESS OF DOPING TO the BORON Of a MONOCRYSTAL OF GAAS

Single Crystal Of Silicon Oxide And Activated By The Gadolinium, And Scintillator For Position Emission Tomography

Improvements with the methods of preparation of monocrystals of body semiconductors

Transistor with the silicon and its manufactoring process

Sb-DOPED SILICON SINGLE CRYSTAL AND GROWING METHOD THEREOF

GROWTH OF A UNIFORMLY DOPED SILICON INGOT BY DOPING ONLY THE INITIAL CHARGE

MANUFACTURING METHOD FOR P-TYPE SILICONCARBIDE SINGLE CRYSTAL AND P-TYPE SILICONCARBIDE SINGLE CRYSTAL

PROCESS FOR THE REACTION OF MONOCRYSTALLINE SILICON DOPED PHOSPHORUS HOMOGENEOUS BY IRRADIATION WITH NEUTRONS

SINGLE CRYSTAL PULL-UP DEVICE

The present invention provides a single crystal pull-up device wherein dopant supply means comprises: a feeding device disposed outside a chamber, whereby a dopant is housed and fed into the chamber; a sublimation room disposed inside the chamber, wherein the dopant fed from the feeding device is held and sublimated; a carrier gas introduction device for introducing a carrier gas into the sublimation room; and a spraying device for spraying the dopant sublimated in the sublimation room, along with the carrier gas, onto a starting material melt surface. The spraying device comprises a tube communicating with the sublimation room and a plurality of spray openings, and, via the tube, the sublimated dopant is dispersed from the plurality of spray openings to be sprayed onto the starting material melt surface. Thus, when doping with a sublimating dopant, the single crystal pull-up device is capable of efficient doping with the dopant in the shortest time possible.

METHODS FOR DISTINGUISHING A SET OF HIGHLY DOPED REGIONS FROM A SET OF LIGHTLY DOPED REGIONS ON A SILICON SUBSTRATE

A method of distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate is disclosed. The method includes providing the silicon substrate, the silicon substrate configured with the set of lightly doped regions and the set of highly doped regions. The method further includes illuminating the silicon substrate with an electromagnetic radiation source, the electromagnetic radiation source transmitting a wavelength of light above about 1100 nm. The method also includes measuring a wavelength absorption of the set of lightly doped regions and the set of heavily doped regions with a sensor, wherein for any wavelength above about 1100 nm, the percentage absorption of the wavelength in the lightly doped regions is substantially less than the percentage absorption of the wavelength in the heavily doped regions.

Silicon single crystal and method for growing silicon single crystal

A silicon single crystal and a method for growing a silicon single crystal are provided. A p-type silicon single crystal is grown with a uniform resistivity value in a pulling direction. Pulling is conducted by the Czochralski method from molten silicon obtained by adding phosphorus to an initial melt in an amount equivalent to 25~35% of an absolute concentration (atoms/cc) of boron contained in the melt.

Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method

A method of lowering the resistivity of resultant silicon crystal from a Czochralski crystal growing process by adding arsenic dopant to the melt in multiple stages.

Binary and ternary crystal purification and growth method and apparatus

Reactive gas is released through a crystal source material or melt to react with impurities and carry the impurities away as gaseous products or as precipitates or in light or heavy form. The gaseous products are removed by vacuum and the heavy products fall to the bottom of the melt. Light products rise to the top of the melt. After purifying, dopants are added to the melt. The melt moves away from the heater and the crystal is formed. Subsequent heating zones re-melt and refine the crystal, and a dopant is added in a final heating zone. The crystal is divided, and divided portions of the crystal are re-heated for heat treating and annealing.

DOPING APPARATUS AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL

A doping device includes a first dopant accommodating portion including an opening on an upper portion to accommodate a first dopant that is evaporated near a surface of a semiconductor melt; a second dopant accommodating portion including a dopant holder that holds a second dopant that is liquefied near the surface of the semiconductor melt while including a communicating hole for delivering the liquefied dopant downwardly, and a conduit tube provided on a lower portion of the dopant holder for delivering the liquefied dopant flowed from the communicating hole to the surface of the semiconductor melt; and a guide provided by a cylinder body of which a lower end is opened and an upper end is closed for guiding dopant gas generated by evaporation of the first dopant to the surface of the semiconductor melt.

SCINTILLATION CRYSTAL, A RADIATION DETECTION SYSTEM INCLUDING THE SCINTILLATION CRYSTAL, AND A METHOD OF USING THE RADIATION DETECTION SYSTEM

A scintillation crystal can include Ln(1-y)REyX3, wherein Ln represents a rare earth element, RE represents a different rare earth element, y has a value in a range of 0 to 1, and X represents a halogen. In an embodiment, RE is Ce, and the scintillation crystal is doped with Sr, Ba, or a mixture thereof at a concentration of at least approximately 0.0002 wt. %. In another embodiment, the scintillation crystal can have unexpectedly improved linearity and unexpectedly improved energy resolution properties. In a further embodiment, a radiation detection system can include the scintillation crystal, a photosensor, and an electronics device. Such a radiation detection system can be useful in a variety of radiation imaging applications.

Hybrid Silicon Wafer and Method of Producing the Same

Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.

Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same

There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved. Silicon substrate contains solid-soluted carbon having a concentration of 1×10 16 -1×10 17 atoms/cm 3 and solid-soluted oxygen having a concentration of 1.4×10 18 -1.6×10 18 atoms/cm 3 .

Mold shape to optimize thickness uniformity of silicon film

A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold.

Method for determining cop generation factors for single-crystal silicon wafer

A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP density RADIUSMAX , a minimum value of the COP density is set as COP density RADIUSMIN , a value computed by “(COP density RADIUSMAX −COP density RADIUSMIN )/COP density RADIUSMAX ” is compared to a predetermined set value, and a non-crystal-induced COP and a crystal-induced COP are distinguished from each other based on a clear criterion, thereby determining the COP generation factor. Therefore, a rejected wafer in which a determination of the crystal-induced COP is made despite being the non-crystal-induced COP can be relieved, so that a wafer production yield can be enhanced.

Support Ring For Supporting A Semiconductor Wafer Composed Of Monocrystalline Silicon During A Thermal Treatment, Method For The Thermal Treatment of Such A Semiconductor Wafer, and Thermally Treated Semiconductor Wafer Composed of Monocrystalline Silicon

A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.

Crystal Growth Atmosphere For Oxyorthosilicate Materials Production

A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.

Methods for epitaxial silicon growth

Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.

Apparatus and method for extracting a silicon ingot

Provided are an apparatus and method of extracting a silicon ingot. The apparatus for extracting a silicon ingot includes a chamber in which a silicon source material introduced into a cold crucible is melted, a primary extraction apparatus vertically movably installed in the chamber and configured to solidify the molten silicon to extract the silicon ingot, a movable apparatus configured to horizontally move the primary extraction apparatus, and a secondary extraction apparatus vertically movably installed under the chamber and configured to extract the silicon ingot in a state in which the primary extraction apparatus is moved to one side. Therefore, as the height of the extraction apparatus is reduced, manufacturing cost of equipment can be reduced and installation space of the extraction apparatus can also be reduced.

Polysilicon system

A polysilicon system comprises polysilicon in at least three form-factors, or shapes, providing for an enhanced loading efficiency of a mold or crucible. The system is used in processes to manufacture multi-crystalline or single crystal silicon.

Method for Forming Silicon Thin Film

The present invention is to provide a method of creating a PIN silicon thin film comprising the steps of providing a molten P-type, Intrinsic and N-type semiconductor material. Next, it is performing a down draw process or a casting process of the molten P-type. Intrinsic and N-type semiconductor material. Then, it is selectively performing a dual-side rolling process to create a P-type, Intrinsic and N-type semiconductor ribbon. Subsequently, it is performing a step of joining the P-type, Intrinsic and N-type semiconductor ribbon to form a PIN semiconductor ribbon. Finally, it is performing a roll press process or a pressing process to the PIN semiconductor ribbon to create the PIN semiconductor thin film.

Method for Fabricating Black Silicon by Using Plasma Immersion Ion Implantation

A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process.

Bulk Growth Grain Controlled Directional Solidification Device and Method

A solidification system is provided and includes a crucible, heater, insulation, movable insulation, and radiation regulator. The crucible is configured to retain a volume of silicon. The heater is to heat the crucible. The heater being configured to provide sufficient heat to melt the volume of silicon. The insulation is to reduce heat loss from a first portion of the crucible. The movable insulation to regulate heat loss from a second portion of the crucible. The radiation regulator is to regulate radiant heat loss over the second portion of the crucible. The radiation regulator is configured to modulate a size of an opening in the radiation regular through which radiant heat dissipates from.

Sheet wafer furnace with gas preservation system

A sheet wafer furnace has a chamber having an opening, and a crucible, within the chamber, and spaced from the opening. The furnace also has a puller configured to pull a sheet wafer from molten material in the crucible and through the opening in the chamber, and a seal across the opening of the chamber.

METHOD FOR MANUFACTURING SILICON WAFER

A method for manufacturing a silicon wafer is provided in which a low-temperature thermal process for growing a thermal donor to be a precipitate nucleus of BMD is not needed, a defect-free layer is formed in a surface layer portion even in a short thermal processing time, a BMD density is increased in a bulk portion. A silicon single crystal having a predetermined oxygen concentration and a predetermined nitrogen concentration is grown by Czochralski method in which nitrogen is added in an inert gas atmosphere containing hydrogen gas, by controlling V/G to form a region where a vacancy-type point defect exists, a silicon wafer sliced from the silicon single crystal is subjected to a planarization process and a mirror polish process, and this wafer is subjected to an RTP in an oxidizing gas atmosphere at a maximum achievable temperature from 1250° C. to 1380° C. for 1 second to 60 seconds. 1. A method for manufacturing a silicon wafer , the method comprising the steps of:{'sup': 18', '18', '3', '14', '15', '3, 'growing a silicon single crystal having an oxygen concentration of from 1.0×10to 1.8×10atoms/cmand a nitrogen concentration of 2.8×10to 5.0×10atoms/cmby the Czochralski method in which nitrogen is added to a silicon melt in an inert gas atmosphere to which hydrogen gas is added, by controlling V/G (where V indicates a pull rate and G indicates a temperature gradient in the direction of a raising axis of the silicon single crystal) so as to form a region where a vacancy-type point defect exists;'}slicing a silicon wafer from said grown silicon single crystal, the silicon wafer then being subjected to a planarization process and a mirror polish process; andsubjecting said mirror polished silicon wafer to a rapid thermal process in an oxidizing gas atmosphere at a maximum achievable temperature from 1250° C. to 1380° C. for 1 second to 60 seconds.2. A method for manufacturing a silicon wafer , the method comprising the steps of:{'sup': 18', '18', '3', '14', '15 ...

Weir method for improved single crystal growth in a continuous czochralski process

A method is disclosed for continuous CZ crystal growing wherein one or more crystal ingots are pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material that is continuously replenished by crystalline feedstock. The method includes separating the molten crystalline material, controlling the flow of the molten crystalline material and defining an annular space with respect to sidewalls of a heat shield in the chamber.

LANGASITE-TYPE OXIDE MATERIAL, METHOD FOR PRODUCING SAME, AND RAW MATERIAL USED IN THE PRODUCTION METHOD

An oxide material having a langasite-type structure having a desired surface condition and a desired outer shape is obtained stably. By adding at least one selected from the group consisting of Ir, Pt, Au, and Rh to a raw material which is a composition used for producing a desired oxide material as an additive element, it is possible to control the wettability between a die portion at a bottom end of a crucible and a melt of the raw material, thereby implementing stable production of the oxide material while controlling the wetting and spread of the melt of the raw material leaked out through a hole of the crucible. 1. A langasite oxide material , comprising:at least one element selected from the group consisting of Ir, Pt, Au, and Rh as an additive element; and {'br': None, 'sub': 3', '3-X', 'X', '2', '14, 'AETaGaAlSiO,'}, 'at least one of a compound represented by formula {'br': None, 'sub': 3', '3-X', 'X', '2', '14, 'AENbGaAlSiO,'}, 'wherein AE represents an alkaline earth metal element selected from the group consisting of Mg, Ca, Sr, and Ba, and 0≦X≦3, or a compound represented by formula{'b': '3', 'wherein AE represents an alkaline earth metal element selected from the group consisting of Mg, Ca, Sr, and Ba and 0≦X≦.'}2. The langasite oxide material according to claim 1 , having a melting temperature of less than 1470° C.3. The langasite oxide material according to claim 1 , wherein X is of 0≦X≦3.4. An oxide material claim 1 , comprising:at least one element selected from the group consisting of Ir, Pt, Au, and Rh as an additive element, and{'sub': 3', '3-X', 'X', '2', '14', '3', '3-X', 'X', '2', '14', '3', '3-X', 'X', '2', '14, 'at least one compound represented by CaTaGaAlSiO(0≦X≦3), CaNbGaAlSiO(0≦X≦3), SrTaGaAlSiO(0≦X≦3).'}5. The oxide material according to claim 4 , having a melting temperature of less than 1470° C.6. The oxide material according to claim 4 , wherein X is of 0 Подробнее

SILICON WAFER

A silicon wafer is provided in which a dislocation is less likely Lo be generated originating from an oxide precipitate in a semiconductor device forming process, and a gettering effect with respect to Cu is increased. A silicon wafer is characterized in that a surface layer portion 1from a surface to a depth of at least 5 μm has an LSTD density of less than 1.0/cm, and that in a bulk portion except the surface layer portion planar oxide precipitates and polyhedral oxide precipitates having a scattered light intensity of 3000 to 5000 a.u., and a density of 1.0×10to 6.0×10(particles/cm) are each intermingled and grown, and a density ratio of the planar oxide precipitate to polyhedral oxide precipitate is represented by (planar oxide precipitate:polyhedral oxide precipitate=X: (100-X), where X is 10 to 40). 1. A silicon wafer in which a surface layer portion from a surface to a depth of at least 5 μm has an LSTD (Laser Scattering Topography Defect) density of less than 1.0/cm ,{'sup': 9', '9', '3, 'in a bulk portion except said surface layer portion, a planar oxide precipitate and a polyhedral oxide precipitate (each) having a scattered light intensity of 3000 to 5000 a.u., and a density of 1.0×10to 6.0×10(particles/cm) are intermingled and grown, and a density ratio of said planar oxide precipitate to polyhedral oxide precipitate is represented by (planar oxide precipitate:polyhedral oxide precipitate=X: (100-X), where X is 10 to 40).'}2. A silicon wafer as claimed in claim 1 , wherein said surface layer portion comprises a device forming layer from the surface to a depth of 2 to 5 μm and a device non-forming layer which is provided between said device forming layer and said bulk portion claim 1 , has a thickness of 5 to 15 μm claim 1 , and does not allow said planar oxide precipitate or polyhedral oxide precipitate to grow. 1. Field of the InventionThe present invention relates to a silicon wafer which is suitably used as a substrate for forming a semiconductor ...

Susceptor and method for manufacturing epitaxial wafer using the same

The present invention provides a susceptor for supporting a semiconductor substrate at the time of performing vapor-phase epitaxy of an epitaxial layer, wherein a pocket in which the semiconductor substrate is to be placed is formed on an upper surface of the susceptor, the pocket has a two-stage structure having an upper-stage-pocket portion for supporting an outer peripheral edge portion of the semiconductor substrate and a lower-stage-pocket portion that is formed on a central side of the pocket below the upper-stage-pocket portion, through holes that penetrate to a back surface of the susceptor and are opened at the time of performing the vapor-phase epitaxy are formed in the lower-stage-pocket portion, and a groove is provided on the back surface of the susceptor at a position corresponding to that of the upper-stage-pocket portion.

Semiconductor Structure and Method

A system and method for providing support to semiconductor wafer is provided. An embodiment comprises introducing a vacancy enhancing material during the formation of a semiconductor ingot prior to the semiconductor wafer being separated from the semiconductor ingot. The vacancy enhancing material forms vacancies at a high density within the semiconductor ingot, and the vacancies form bulk micro defects within the semiconductor wafer during high temperature processes such as annealing. These bulk micro defects help to provide support and strengthen the semiconductor wafer during subsequent processing and helps to reduce or eliminate a fingerprint overlay that may otherwise occur.

POLYCRYSTALLINE SILICON ROD

A polycrystalline silicon rod comprises a seed rod made of polycrystalline silicon, and a polycrystalline silicon deposit which is deposited on the outer circumferential surface of the seed rod by the CVD process. A diameter of the polycrystalline silicon rod is 77 mm or less. When the polycrystalline silicon rod is observed by an optical microscope with respect to the cross section perpendicular to an axis of the seed rod, needle-shaped crystals each having a length of 288 μm or less are uniformly distributed radially with the seed rod being as the center in the polycrystalline silicon deposit. The needle-shaped crystals account for 78% or more of the cross section. 1. A polycrystalline silicon rod comprising a seed rod made of polycrystalline silicon , and a polycrystalline silicon deposit which is deposited on an outer circumferential surface of the seed rod by the CVD process ,wherein a diameter of the polycrystalline silicon rod is 77 mm or less,wherein when the polycrystalline silicon rod is observed by an optical microscope with respect to across section perpendicular to an axis of the seed rod, needle-shaped crystals each having a length of 288 μm or less are uniformly distributed radially with the seed rod being as the center in the polycrystalline silicon deposit, andwherein said needle-shaped crystals account for 78% or more area of the cross section.2. The polycrystalline silicon rod according to claim 1 , wherein when the polycrystalline silicon rod is observed with respect to the cross section perpendicular to the axis of the seed rod claim 1 , lengths and widths of the needle-shaped crystals at a position away by 5 mm from the outer circumferential surface of the seed rod toward the outside in the radial direction thereof on the same circumference with the axis of the seed rod being as the center are distributed so that said lengths and said widths are respectively 115 μm or less and is 23 μm or less.3. The polycrystalline silicon rod according to ...

Methods Apparatus for Manufacturing Geometric Multi-Crystalline Cast Materials

Methods are provided for casting one or more of a semi-conductor, an oxide, and an intermetallic material. With such methods, a cast body of a geometrically ordered multi-crystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm.

Gas injector for high volume, low cost system for epitaxial silicon depositon

Apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a gas injector for use in a process chamber may include first set of gas orifices configured to provide a jet flow of a first process gas into the process chamber, and a second set of gas orifices configured to provide a laminar flow of a second process gas into the process chamber, wherein the first set of gas orifices are disposed between at least two gas orifices of the second set of gas orifices.

METHOD OF PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

Provided is a method of producing a group III-V compound, comprising: producing a raw material by housing a group III-V compound semiconductor crystal containing group III element and group V element and an impurity in a crucible, and heating and melting the group III-V compound semiconductor crystal in a state that a surface of the group III-V compound semiconductor crystal to an atmosphere in the crucible; growing the group III-V compound semiconductor single crystal by heating the raw material and an encapsulant by adding the encapsulant into the crucible in which the raw material is housed, and making a seed crystal in contact with a melt of the raw material with a liquid surface covered by the encapsulant in a liquid state, and lifting the seed crystal. 1. A method of producing a group III-V compound semiconductor single crystal , using a Liquid Encapsulated Czochralski method , comprising:producing a raw material by housing a group III-V compound semiconductor crystal containing group III element and group V element and an impurity in a crucible, and heating and melting the group III-V compound semiconductor crystal in a state that a surface of the group III-V compound semiconductor crystal to an atmosphere in the crucible;growing the group III-V compound semiconductor single crystal by heating the raw material and an encapsulant by adding the encapsulant into the crucible in which the raw material is housed, and making a seed crystal in contact with a melt of the raw material with a liquid surface covered by the encapsulant in a liquid state, and lifting the seed crystal.2. The method of claim 1 , wherein in producing the raw material claim 1 , an inside of the crucible is set in an inert gas atmosphere of not less than a steam pressure of the group V element and not more than the steam pressure of a gas component containing the impurity.3. The method of claim 1 , wherein in producing the raw material claim 1 , an inside of the crucible is set in an inert gas ...

Stabilized thallium bromide radiation detectors and methods of making the same

According to one embodiment, a crystal includes thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants. According to another embodiment, a system includes a monolithic crystal including thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants; and a detector configured to detect a signal response of the crystal.

DEVICE AND METHOD FOR CLEANING MONOCRYSTALLINE PULLING APPARATUS

A device for cleaning the inside of a monocrystalline pulling apparatus includes a main tube unit to be inserted into a pull chamber and an inner surface cleaning mechanism that is provided at an upper part of the main tube unit and cleans the inner surface of the pull chamber. The main tube unit includes a retreat/housing section into which a seed chuck provided at the lower end of a wire retreats and which houses the seed chuck therein, and a continuous extension mechanism that is provided at the lower part of the main tube unit and to which a plurality of extension rods are capable of being added and joined. Accordingly, the inner surface of the pull chamber is efficiently cleaned. 1. A device for cleaning a monocrystalline pulling apparatus in which a semiconductor monocrystal is pulled from semiconductor melt stored in a crucible installed below a pull chamber by a wire suspended in the pull chamber of a sealed vessel , the device comprising:a main tube unit to be inserted into the pull chamber; andan inner surface cleaning mechanism that is provided at an upper part of the main tube unit and cleans an inner surface of the pull chamber,the main tube unit including:a retreat/housing section into which a seed chuck provided at a lower end of the wire retreats and which houses the seed chuck therein, anda continuous extension mechanism that is provided at a lower part of the main tube unit and to which a plurality of extension rods are added and joined in an axial direction.2. The device for cleaning a monocrystalline pulling apparatus according to claim 1 ,wherein the inner surface cleaning mechanism includes a wiper member that is provided on an outer peripheral surface of the main tube unit and is in contact with the inner surface of the pull chamber in a state where the main tube unit is inserted into the pull chamber.3. The device for cleaning a monocrystalline pulling apparatus according to claim 2 ,wherein the wiper member is provided in an annular shape ...

METHOD AND DEVICE FOR SLICING A SHAPED SILICON INGOT USING LAYER TRANSFER

A method for slicing a crystalline material ingot includes providing a crystalline material boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in a first crystallographic direction extending from the first end-face to the second end-face. The method also includes cutting the crystalline material boule substantially through a first crystallographic plane in parallel to the axis to separate the crystalline material boule into a first portion with a first surface and a second portion with a second surface. The first surface and the second surface are planar surfaces substantially along the first crystallographic plane. The method further includes exposing either the first surface of the first portion or the second surface of the second portion, and performing a layer transfer process to form a crystalline material sheet from either the first surface of the first portion or from the second surface of the second portion. 1. A crystalline material boule portion used to produce a plurality of crystalline material sheets , the crystalline material boule portion comprising:a major surface that is substantially planar along a crystallographic plane;a first side face that is substantially planar along a first direction orthogonal to the major surface; anda second side face that is substantially planar along a second direction orthogonal to the major surface,wherein the major surface is exposed to produce the plurality of crystalline material sheets through a layer transfer process.2. The crystalline material boule portion of claim 1 , wherein the crystalline material boule portion is cut from a crystalline material boule that has a cropped structure including a first end-face claim 1 , a second end-face claim 1 , and a length along an axis in a crystallographic direction substantially extending from the first end-face to the second end-face claim 1 ,wherein the first and the second side faces correspond to the ...

METHOD FOR PREPARING SOLAR GRADE SILICON SINGLE CRYSTAL USING CZOCHRALSKI ZONE MELTING METHOD

The present invention discloses a method of preparing solar-grade silicon single crystals by using the Czochralski and float-zone process: in the equal-diameter growth process during the float-zone phase, under the control by the electric control system of a float-zone single crystal furnace, a downward-rotating motor alternates forward rotations and reverse rotations; said downward-rotating motor drives silicon single crystals to rotate by the preset forward angle or reverse angle. The present invention improves the radial resistivity variation of solar-grade silicon single crystals and solves the black heart problem with solar-grade silicon single crystals. Thus, the conversion efficiency of the solar cells manufactured using such solar-grade silicon single crystals can be increased. 1. A method of preparing solar-grade silicon single crystals by using the Czochralsk and float-zone process , characterized in that , in the equal-diameter growth process during the float-zone phase , under the control by the electric control system of a float-zone single crystal furnace , a downward-rotating motor alternates forward rotations and reverse rotations; said downward-rotating motor drives silicon single crystals to rotate by the preset forward angle or reverse angle.2. The method of preparing solar-grade silicon single crystals by using the Czochralsk float-zone process according to claim 1 , characterized in that the ratio of said forward angle to said reverse angle is a preset value.3. The method of preparing solar-grade silicon single crystals by using the Czochralsk and float-zone process according to claim 2 , characterized in that the ratio of said forward angle to said reverse angle is 380:620.4. The method of preparing solar-grade silicon single crystals by using the Czochralsk zone-and float-zone process according to claim 1 , characterized in that said forward angle is in the range 100° to 800° claim 1 , and said reverse angle is in the range 50° to 750°. The ...

METHOD OF MANUFACTURING CZ SILICON WAFERS, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged. 1. A method of manufacturing CZ silicon wafers , comprising:measuring a parameter of at least two of the CZ silicon wafers;determining a group of the CZ silicon wafers falling within a tolerance of a target specification;dividing the group of the CZ silicon wafers into sub-groups taking into account the measured parameter, wherein an average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification;preparing a labeling configured to distinguish between the CZ silicon wafers of different sub-groups; andpackaging the CZ silicon wafers falling within the tolerance of the target specification.2. The method of claim 1 , wherein the parameter is a silicon wafer resistance.3. The method of claim 1 , wherein the parameter of a first part of the CZ silicon wafers is determined by measurement and the parameter of a second part of the silicon wafers is determined by calculation taking the results of the measurement into account.4. The method of claim 1 , wherein the CZ silicon wafers falling within the tolerance of ...

METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL INGOT, AND SILICON SINGLE CRYSTAL INGOT MANUFACTURED BY THE METHOD

An embodiment provides a method for manufacturing a silicon single crystal ingot by using a silicon single crystal growing apparatus comprising: a chamber; a crucible arranged inside the chamber and accommodating a molten silicon solution; a heater arranged outside the crucible so as to heat the crucible; a heat shielding part arranged inside the chamber; and a pulling part for pulling a single crystal growing from the molten silicon solution, wherein the method can comprise a step of respectively growing a neck part, a shoulder part and a body part. 1. A method for manufacturing a silicon single crystal ingot using a silicon single crystal growth apparatus comprising:a chamber;a crucible arranged within the chamber and accommodating a molten silicon solution;a heater arranged outside the crucible so as to heat the crucible;a heat shielding part arranged inside the chamber; anda pulling part to pull a single crystal grown from the molten silicon solution,the method comprising growing a neck part, growing a shoulder part and growing a body part,wherein growth of the shoulder part includes:a first operation of decreasing a pulling speed of the shoulder part from a first pulling speed to a second pulling speed and decreasing a process temperature drop management value from a first management value to a second management value; anda second operation of maintaining the second pulling speed of the shoulder part and maintaining the second management value.2. The method according to claim 1 , wherein claim 1 , in the first operation claim 1 , a ratio of the pulling speed of the shoulder part to the process temperature drop management value is increased as the height of the shoulder part increases.3. The method according to claim 2 , wherein the ratio is linearly increased as the height of the shoulder part increases.4. The method according to claim 1 , wherein claim 1 , in the second operation claim 1 , a ratio of the pulling speed of the shoulder part to the process ...

METHODS FOR DETERMINING THE RESISTIVITY OF A POLYCRYSTALLINE SILICON MELT

Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity. 1. A method for determining the resistivity of a polycrystalline silicon melt held within a crucible , the method comprising:pulling a sample rod from the melt;annealing the sample rod in a thermal donor kill cycle;applying a current to the sample rod; andcontacting the sample rod with a resistivity probe while applying current to the sample rod to measure the resistivity of the rod.2. The method as set forth in further comprising forming a planar segment on a surface of the sample rod claim 1 , the resistivity probe contacting the planar segment to measure the resistivity of the rod.3. The method as set forth in wherein the probe is a two-point resistivity probe.4. The method as set forth in wherein the sample rod has an average diameter claim 1 , the average diameter of the sample rod being less than about 150 mm.5. The method as set forth in wherein the sample rod has an average diameter claim 1 , the average diameter of the sample rod being less than about 100 mm.6. The method as set forth in wherein the sample rod has an average diameter claim 1 , the average diameter of the sample rod being less than about 50 mm.7. The method as set forth in wherein the sample rod has an average diameter claim 1 , the average diameter of the sample rod being less than about 25 mm.8. The method as set forth in wherein the sample rod has a largest diameter claim 1 , the largest diameter of the sample rod being less than about 150 mm.9. The method as set forth in wherein the sample rod has a largest diameter claim ...

METHODS FOR PRODUCING A SILICON INGOT THAT INVOLVE MONITORING A MOVING AVERAGE OF THE INGOT NECK PULL RATE

Methods for producing monocrystalline silicon ingots in which the pull rate during neck growth is monitored are disclosed. A moving average of the pull rate may be calculated and compared to a target moving average to determine if dislocations were not eliminated and the neck is not suitable for producing an ingot main body suspended from the neck. 1. A method for producing a monocrystalline silicon ingot having a neck and a main body suspended from the neck , the method comprising:contacting a seed crystal with a silicon melt held within a crucible;pulling a neck from the silicon melt;measuring a pull rate at which the neck is pulled from the silicon melt;calculating a moving average from the measured pull rate;comparing the moving average of the measured pull rate to a target range; andpulling an ingot main body from the melt if the moving average is within the target range, the main body being suspended from the neck.2. The method as set forth in wherein a main body is not grown from the melt if the moving average is outside the target range.3. The method as set forth in wherein the neck is lowered into the melt if the moving average is outside the target range.4. The method as set forth in wherein the neck is a first neck claim 2 , the method further comprising:pulling a second neck from the silicon melt if the main body is not grown from the first neck;measuring a pull rate at which the second neck is pulled from the silicon melt;calculating a moving average from the measured pull rate of the second neck;comparing the moving average of the measured pull rate of the second neck to the target range; andpulling an ingot main body from the melt if the moving average of the measured pull rate of the second neck is within the target range, the main body being suspended from the second neck.5. The method as set forth in wherein the target range comprises a maximum moving average.6. The method as set forth in wherein the target range comprises a minimum moving average. ...

MONITORING A MOVING AVERAGE OF THE INGOT NECK PULL RATE TO CONTROL THE QUALITY OF THE NECK FOR INGOT GROWTH

Methods for producing monocrystalline silicon ingots in which the pull rate during neck growth is monitored are disclosed. A moving average of the pull rate may be calculated and compared to a target moving average to determine if dislocations were not eliminated and the neck is not suitable for producing an ingot main body suspended from the neck. 1. A method for controlling the quality of a neck used to support an ingot main body , the neck being pulled from a silicon melt , the method comprising:measuring a pull rate at which the neck is pulled from the silicon melt;calculating a moving average of the pull rate from the measured pull rate;comparing the moving average of the measured pull rate to a target range; andsending a signal to terminate neck growth if the moving average falls outside of the target range.2. The method as set forth in wherein neck growth is terminated by lowering the neck into the melt.3. The method as set forth in wherein neck growth is terminated by increasing a pull rate of the neck to form an end cone and removing the neck from an ingot puller in which the neck was formed.4. The method as set forth in wherein the neck has a resistivity of less than about 20 mohm-cm.5. The method as set forth in wherein the neck is nitrogen-doped claim 1 , the neck comprising nitrogen at a concentration of at least about 1×10atoms/cm.6. The method as set forth in further comprising operating a heating system at a power within about +/−0.5 kW of an average power while measuring the pull rate.7. The method as set forth in further comprising operating a heating system at a power within about +/−0.25 kW of an average power while measuring the pull rate.8. The method as set forth in wherein the target range comprises a maximum moving average.9. The method as set forth in wherein the target range comprises a minimum moving average.10. The method as set forth in wherein the target range is bound by a minimum moving average and a maximum moving average.11. The ...

GROWTH OF PLURAL SAMPLE RODS TO DETERMINE IMPURITY BUILD-UP DURING PRODUCTION OF SINGLE CRYSTAL SILICON INGOTS

Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed. A parameter related to the impurity concentration of the melt or ingot is measured. In some embodiments, the sample rods each have a diameter less than the diameter of the product ingot. 1. A method for producing a single crystal silicon ingot from a silicon melt held within a crucible comprising:adding polycrystalline silicon to the crucible;heating the polycrystalline silicon to cause a silicon melt to form in the crucible;pulling a first sample rod from the melt, the first sample rod having a first sample rod diameter;measuring a first sample rod parameter related to the quality of the first sample rod and/or the silicon melt;pulling a second sample rod from the melt, the second sample rod having a second sample rod diameter;measuring a second sample rod parameter related to the quality of the second sample rod and/or the silicon melt; andpulling a product ingot from the melt, the product ingot having a diameter, the first sample rod diameter and the second sample rod diameter being less than the diameter of the product ingot.2. The method as set forth in wherein the first sample rod parameter and the second sample rod parameter are the same parameter.3. The method as set forth in further comprising comparing the measured first sample rod parameter to the measured second sample rod parameter.4. The method as set forth in wherein the change of the parameter over time is measured.5. The method as set forth in wherein the first sample rod parameter and the second sample rod parameter are different parameters.6. The method as set forth in wherein the first sample rod parameter and the second sample rod parameter is related to the impurity concentration of the melt and/or product ingot.7. The method as set forth in wherein the parameter is selected from the group consisting of the phosphorous concentration claim 6 , boron concentration claim 6 , ...

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

A method of fabricating a semiconductor device includes feeding a suppression gas, a source gas, a reactive gas, and a purge gas including an inert gas, into a process chamber in which a substrate is disposed. The suppression gas suppresses the physical adsorption of the source gas onto the substrate. As a result, a thin film is formed on the substrate 1. A method of fabricating a semiconductor device , comprising:providing a substrate; andforming a thin film on the substrate by a process comprising:feeding a suppression gas onto the substrate;feeding a source gas;feeding a reactive gas; andfeeding a purge gas comprising an inert gas,wherein the suppression gas suppresses a physical adsorption of the source gas by the substrate.2. The method of claim 1 , whereinthe source gas comprises a titanium-based compound, andthe reactive gas comprises a nitride-based compound.3. The method of claim 2 , wherein the suppression gas comprises an alkyl halide claim 2 , an alkenyl halide claim 2 , an alkynyl halide claim 2 , an alkene claim 2 , an alkyne claim 2 , and a combination thereof.4. The method of claim 3 , wherein each of the alkyl halide claim 3 , the alkenyl halide claim 3 , and the alkynyl halide includes 1 to 10 carbon atoms claim 3 , andeach of the alkene and the alkyne includes 1 to 10 carbon atoms.5. The method of claim 4 , wherein each of the alkyl halide claim 4 , the alkenyl halide claim 4 , and the alkynyl halide includes 1 to 10 halogen atoms.6. The method of claim 1 , wherein the suppression gas does not comprise oxygen and nitrogen claim 1 , and does not react with the source gas.7. The method of claim 1 , wherein the feeding the suppression gas comprises feeding the suppression gas before or after the feeding of the source gas.8. The method of claim 1 , wherein the feeding the suppression gas claim 1 , comprises feeding the suppression gas after the feeding of the reactive gas.9. The method of claim 1 , whereinthe purge gas comprises first through third ...

METHOD FOR MEASURING THREE-DIMENSIONAL SHAPE OF SILICA GLASS CRUCIBLE, AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON

A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided. 1. A method for measuring a three-dimensional shape of a vitreous silica crucible , comprising the steps of:forming a fog onto an inner surface of the vitreous silica crucible,measuring a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light.2. The method of claim 1 , wherein the fog is formed by cooling the vitreous silica crucible.3. The method of claim 1 , wherein the fog is formed by increasing an amount of water vapor contained in an atmosphere around the vitreous silica crucible.4. The method of claim 1 , further comprising the steps of:moving an internal ranging section along an inner surface of the vitreous silica crucible in a contactless manner in accordance with the three-dimensional shape;measuring a distance between the internal ranging section and the inner surface as a distance from the inner surface, by subjecting the inner surface of the crucible to irradiation with laser light and then detecting a reflected light from the inner surface, the laser light being emitted from the internal ranging section in an oblique direction with respect to the inner surface, and the measurement being conducted at a plurality of measuring points along a course of a movement of the internal ranging section; andobtaining an inner surface three- ...

QUARTZ GLASS CRUCIBLE

A quartz glass crucible () includes: a cylindrical crucible body () which has a bottom and is made of quartz glass; and a first crystallization-accelerator-containing coating film (A) which is formed on an inner surface () so as to cause an inner crystal layer composed of an aggregate of dome-shaped or columnar crystal grains to be formed on a surface-layer portion of the inner surface () of the crucible body () by heating during a step of pulling up the silicon single crystal by a Czochralski method. The quartz glass crucible is intended to withstand a single crystal pull-up step undertaken for a very long period of time. 1. A quartz glass crucible used for pulling up a silicon single crystal by a Czochralski method , comprising:a cylindrical crucible body which has a bottom and is made of quartz glass; anda first crystallization-accelerator-containing coating film which is formed on an inner surface of the crucible body so as to cause an inner crystal layer composed of an aggregate of dome-shaped or columnar crystal grains to be formed on a surface-layer portion of the inner surface of the crucible body by heating during a step of pulling up the silicon single crystal.2. The quartz glass crucible according to claim 1 ,wherein a ratio A/B between a maximum value A of a peak intensity at a diffraction angle 2θ of 20° to 25° and a maximum value B of a peak intensity at a diffraction angle 2θ of 33° to 40° obtained by analyzing the inner surface of the crucible body, on which the inner crystal layer is formed, by an X-ray diffraction method is 7 or less.3. The quartz glass crucible according to claim 1 ,wherein the inner crystal layer has a dome-shaped crystal layer composed of the aggregate of dome-shaped crystal grains formed on the surface-layer portion of the inner surface of the crucible body, and a columnar crystal layer composed of the aggregate of columnar crystal grains immediately under the dome-shaped crystal layer.4. The quartz glass crucible according to ...

SILICON-TITANIUM DIOXIDE-POLYPYRROLE THREE-DIMENSIONAL BIONIC COMPOSITE MATERIAL BASED ON HIERARCHICAL ASSEMBLY AND USE THEREOF

The invention relates to a three-dimensional bionic composite material based on refection elimination and double-layer P/N heterojunctions. The preparation method of the composite material comprises: (1) anisotropically etching a silicon wafer with an alkaline solution, to form compactly arranged tetragonal pyramids on the surface of the silicon wafer; (2) performing hydrophilic treatment on the silicon wafer, growing TiO2 crystal seeds on the surface of the silicon wafer, and calcining the silicon wafer in a muffle furnace; (3) putting the silicon wafer obtained in the step (2) into a reaction kettle, and growing TiO2 nano-rods on the side walls of silicon cones by a hydrothermal synthesis method; and (4) depositing PPY nano-particles on the TiO2 nano-rods. The composite material has good refection elimination performance and efficient photogenerated charge separation capability, and is applicable in fields of photo-catalysis, photoelectric conversion devices, solar cells and the like. 1. A silicon-titanium dioxide-polypyrrole three-dimensional bionic composite material based on hierarchical assembly , comprising an ordered hierarchy (Si/TiO/PPY) of monocrystalline silicon (Si) , titanium dioxide (TiO) and polypyrrole (PPY) ,wherein Si is 100-type monocrystalline silicon with a tapered microstructure surface and is a P-type semiconductor, and has compactly arranged silicon cone structure of tetragonal pyramids with a height of 4-10 μm;{'sub': 2', '2, 'TiOis TiOnano-rods of rutile phase and is an N-type semiconductor, and is quadrangular with a height of 500-4000 nm and a diameter of 40-250 nm, and orderly and vertically grown on the side walls of the silicon cones;'}{'sub': '2', 'PPY is polypyrrole nano-particles with a diameter of 10-60 nm and is a P-type semiconductor, and is uniformly grown on the surfaces of the TiOnano-rods;'}{'sub': 2', '2', '2, 'in the Si/TiO/PPY three-dimensional bionic composite material, double P/N heterojunctions are formed on interfaces ...

SEMICONDUCTOR CRYSTAL GROWTH APPARATUS

The present invention provides a semiconductor crystal growth apparatus, which comprises a furnace body, a crucible, a pulling device, a deflector, and a magnetic field applying device. The crucible is disposed inside the furnace body for containing silicon melt. The pulling device is disposed on the top of the furnace body for pulling a silicon ingot from the silicon melt. The deflector is in a barrel shape and is disposed in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot in a vertical direction and through the deflector. The magnetic field applying device is configured to apply a magnetic field to the silicon melt in the crucible, in which the distance between the bottom of the deflector and the liquid level of the silicon melt in the direction of the magnetic field is less than that between the bottom of the deflector and the silicon melt in the direction perpendicular to the direction of the magnetic field. 1. A semiconductor crystal growth apparatus , comprising:a furnace body;a crucible, disposed inside the furnace body for containing a silicon melt;a pulling device, disposed on the top of the furnace body for pulling a silicon ingot from the silicon melt;a deflector, in a barrel shape and disposed in the furnace body in a vertical direction; anda magnetic field applying device, configured to apply a horizontal magnetic field to the silicon melt in the crucible; wherein the distance between the bottom of the deflector and the liquid level of the silicon melt in the direction of the magnetic field is less than that between the bottom of the deflector and the silicon melt in the direction perpendicular to the direction of the magnetic field.2. The apparatus according to claim 1 , wherein the bottom of the deflector has a wave-shaped surface protruding downward.3. The apparatus according to claim 2 , wherein in the direction of the magnetic field claim 2 , the bottom of the deflector is located on a wave trough of the ...

METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO EPITAXIAL GROWTH

Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process. 1. A processing system , comprising:a first processing chamber; and removing carbon containing contaminants from a native oxide layer on a surface of a substrate by performing a reducing process using a hydrogen containing plasma in the first processing chamber; and', 'removing the native oxide layer from the substrate by performing an etch process using a fluorine containing plasma in the first processing chamber., 'a controller configured to cause a process to be performed in the processing system, the process comprising2. The processing system of claim 1 , wherein the hydrogen containing plasma is generated using Hgas.3. The processing system of claim 1 , wherein the hydrogen containing plasma is generated using NHgas.4. The processing system of claim 1 , wherein the fluorine containing plasma is generated using a Fgas.5. The processing system of claim 1 , wherein the fluorine containing plasma is generated using NFgas.6. The processing system of claim 1 , wherein the etch process further comprises:exposing the substrate to the fluorine containing plasma, producing solid by-products on the surface of the substrate; andraising the temperature of the substrate to remove the solid by-products from the surface of the substrate.7. The processing system of claim 6 , wherein the temperature of the substrate is raised to 120° C. or more to remove the solid by-products from the surface of the substrate via sublimation.8. The processing system of claim 1 , wherein the hydrogen containing plasma is an inductively coupled plasma.9. The processing system of claim 1 , wherein the hydrogen containing plasma is a capacitively coupled plasma.10. The ...

SILICON INGOT GROWTH CRUCIBLE WITH PATTERNED PROTRUSION STRUCTURED LAYER

A crucible for growing silicon ingots may include a vessel having a bottom wall and side walls surrounding an inner portion of the vessel. A coating layer is applied to inner surfaces of the bottom wall and the side walls, the coating layer including a temperature-resistant material compatible with ingot growth from molten silicon such as silicon nitride. A patterned protrusion layer is applied at the inner surface of the bottom wall, which includes a matrix consisting of a temperature-resistant material compatible with ingot growth from molten silicon such as silicon nitride. Furthermore, the patterned protrusion layer includes particles of a nucleation enhancing material such as silica, the particles locally protruding from the matrix. The protruding particles may generate a pattern of multiple nucleation points during crystal growth of the ingot. Due to such multiple nucleation points, a dislocation density defect propagation towards a top may be reduced during crystal growth such that, e.g., solar cells produced with wafers sliced from the resulting ingot may have an improved conversion efficiency. 1. A crucible for growing silicon ingots , the crucible comprising:a vessel having a bottom wall and side walls surrounding an inner portion of the vessel;a coating layer applied to inner surfaces of the bottom wall and the side walls, the coating layer comprising a temperature-resistant material compatible with ingot growth from molten silicon;a patterned protrusion layer applied at the inner surface of the bottom wall, the patterned protrusion layer comprising a matrix consisting of silicon nitride and further comprising particles of a nucleation enhancing material which is adapted for forming a wetting agent when in contact with a liquid silicon melt, the particles locally protruding from the matrix.2. The crucible of claim 1 , wherein the patterned protrusion layer is applied to the inner surface of the bottom wall exclusively.3. The crucible of claim 1 , wherein ...

METHODS AND APPARATUSES FOR MANUFACTURING CAST SILICON FROM SEED CRYSTALS

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting. 1. A method of manufacturing cast silicon , comprising:loading a seed layer of silicon comprising near-monocrystalline silicon into a crucible;loading solid silicon feedstock into the crucible;placing a lid over an opening of the crucible;flowing an inert gas into the crucible through at least one hole in the lid;expelling the inert gas from the crucible through at least one other hole in the lid;melting the silicon feedstock while maintaining a part of the seed layer in a solid state;forming a solid body of silicon comprising near-monocrystalline silicon; andcooling the solid body.2. The method according to claim 1 , wherein the loading of the seed layer paces the seed layer on a bottom surface of the crucible.3. The method according to claim 1 , wherein the inert gas comprises argon or nitrogen.4. The method according to claim 1 , wherein the expelling of the inert gas prevents backflow into the crucible.5. The method according to claim 1 , wherein the flowing of the inert gas occurs during at least the melting the silicon feedstock and the forming of a solid body.6. The method according to claim 1 , wherein the flowing of the inert gas pressurizes the crucible above a surrounding environment.7. The method according to claim 1 , further comprising applying a vacuum to the crucible after loading the seed layer and the silicon feedstock claim 1 , and before flowing of the inert gas begins.8. The method according to claim 1 , wherein the forming a solid body comprises extracting heat through at least a bottom surface of the crucible.9. The method of according to claim 1 , wherein the flowing and the expelling of the inert gas at least partially reduces or prevents carbon incorporation into the ...

METHODS FOR REDUCING DEPOSITS IN INGOT PULLER EXHAUST SYSTEMS

Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed. 1. A method for reducing the rate at which deposits form within the exhaust of an ingot puller , the ingot puller comprising a crucible , a housing disposed around the crucible , the housing having an atmosphere therein , the method comprising:introducing a dopant selected from the group consisting of indium and thallium into the silicon melt to reduce silicon oxide formation; andwithdrawing a silicon ingot from the doped melt, the atmosphere being at a pressure of at least about 5 kPa while withdrawing the silicon ingot.2. The method as set forth in further comprising:introducing a process gas into the housing; andwithdrawing a spent process gas from the housing, the spent process gas passing through an exhaust system of the ingot puller during withdrawal.3. The method as set forth in wherein the dopant reacts with oxygen to form an oxide in the melt.4. The method as set forth in wherein the atmosphere is at a pressure of at least about 7 kPa while withdrawing the silicon ingot.5. The method as set forth in further comprising:establishing a baseline pressure for withdrawing the silicon ingot from the melt without dopant being introduced into the melt;commencing addition of dopant into the melt to reduce silicon oxide formation; andincreasing the pressure of the atmosphere above the baseline pressure to offset an increase in oxygen evaporation from the melt caused by addition of dopant into the melt.6. The method as set forth in wherein silicon is not added to the melt after the melt is formed.7. The method as set forth in further comprising replenishing the silicon melt by adding silicon to the crucible.8. The method as set forth in wherein the dopant is added at a rate to produce a silicon ingot with a resistivity of about 0.01 ohm-cm to about 6 ohm-cm.9. The method as set forth in wherein the crucible contains at ...

METHODS FOR REDUCING THE EROSION RATE OF A CRUCIBLE DURING CRYSTAL PULLING

Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed. 1. A method for reducing the erosion rate of a crucible during preparation of a silicon ingot , the ingot being formed by pulling the silicon ingot from a melt of silicon within the crucible , the crucible being positioned within a housing having an atmosphere therein , the melt and atmosphere forming a melt-gas interface , the method comprising:introducing a dopant selected from the group consisting of indium, gallium, thallium, arsenic, antimony and combinations thereof into the silicon melt to alter the oxygen evaporation profile of the melt; and{'b': '5', 'withdrawing a silicon ingot from the doped melt, the atmosphere being at a pressure of at least about kPa while withdrawing the silicon ingot.'}2. The method as set forth in comprising replenishing the silicon melt by adding silicon to the crucible;3. The method as set forth in wherein the dopant is added intermittently or continuously to the melt to replenish the dopant in the melt.47. The method as set forth in wherein the atmosphere is at a pressure of at least about kPa while withdrawing the silicon ingot.5. The method as set forth in further comprising:establishing a baseline pressure for withdrawing the silicon ingot from the melt without dopant being introduced into the melt;commencing addition of dopant into the melt to alter the oxygen evaporation profile of the melt; andincreasing the pressure of the atmosphere above the baseline pressure to offset an increase in oxygen evaporation from the melt caused by addition of dopant into the melt.6. The method as set forth in wherein increasing the pressure of the atmosphere above the baseline pressure reduces the rate of erosion at an interface between the crucible claim 5 , the melt and the atmosphere.7. The method as set forth in wherein dopant is added to the melt separately from the addition of silicon.8. The method as ...

POLYCRYSTALLINE SILICON INGOT, POLYCRYSTALLINE SILICON BRICK AND POLYCRYSTALLINE SILICON WAFER

The present disclosure provides a polycrystalline silicon ingot, a polycrystalline silicon brick and a polycrystalline silicon wafer. The polycrystalline silicon ingot has a vertical direction and includes a nucleation promotion layer located at a bottom of the polycrystalline silicon ingot, and a plurality of silicon grains grown along the vertical direction, wherein the silicon grains include at least three crystal directions. The coefficient of variation of grain area in a section above the nucleation promotion layer of the polycrystalline silicon ingot increases along the vertical direction. 1. A polycrystalline silicon ingot having a vertical direction , comprising:a nucleation promotion layer located at a bottom of the polycrystalline silicon ingot; anda plurality of silicon grains grown along the vertical direction, wherein the plurality of silicon grains comprise at least three crystal directions,wherein a coefficient of variation of grain area in a section above the nucleation promotion layer of the polycrystalline silicon ingot increases along the vertical direction.2. The polycrystalline silicon ingot of claim 1 , wherein a standard deviation of grain area in the section of the polycrystalline silicon ingot increases along the vertical direction.3. The polycrystalline silicon ingot of claim 1 , wherein the coefficient of variation of grain area in a section above the nucleation promotion layer of the polycrystalline silicon ingot is less than 400%.4. The polycrystalline silicon ingot of claim 1 , wherein the coefficient of variation of grain area in a section above the nucleation promotion layer of the polycrystalline silicon ingot is between 150% and 400%.5. The polycrystalline silicon ingot of claim 1 , wherein an average grain area in a section above the nucleation promotion layer of the polycrystalline silicon ingot is between 4 mmand 11 mm.6. The polycrystalline silicon ingot of claim 1 , wherein an average grain area in a section above the ...

GAS DOPING SYSTEMS FOR CONTROLLED DOPING OF A MELT OF SEMICONDUCTOR OR SOLAR-GRADE MATERIAL

A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.

COOLING RATE CONTROL APPARATUS AND INGOT GROWING APPARUTS INCLUDING SAME

The present disclosure relates to an apparatus for growing an ingot from silicon melt contained in a crucible by using a seed crystal, the apparatus comprising a chamber including a lower portion for accommodating the crucible and an upper portion through which the growing ingot passes, and a cooling rate control unit which is disposed at the upper portion of the chamber to extend to the lower portion of the chamber and has a hole through which the growing ingot passes, wherein the cooling rate control unit comprises an insulation part for insulating the ingot, a cooling part disposed over the insulation part to cool the ingot, and a blocking part disposed between the insulation part and the cooling part to prevent heat exchange therebetween.

Method for cleaning single crystal pulling apparatus, cleaning tool for use therein, and method for manufacturing single crystal

A method for cleaning a single crystal pulling apparatus according to the present invention includes preparing a dummy crucible that simulates a crucible and includes a dummy liquid surface simulating a liquid surface of material melt in the crucible and a first dummy ingot simulating a single crystal ingot in process of being pulled up from the liquid surface of the material melt, and supplying gas in a state in which the dummy crucible is installed in a decompressed chamber of the single crystal pulling apparatus to generate a flow of the gas affected by the dummy crucible and detach foreign substances adhering to a wall surface of the chamber or parts in the chamber.

METHOD FOR GROWING MONOCRYSTALLINE SILICON BY USING CZOCHRALSKI METHOD

The present application provides a method for growing monocrystalline silicon by using Czochralski method, comprising: step (1) melting a deuterium-, nitrogen- and barium-doped silicon sheet and a polycrystalline silicon in a crucible; step (2) forming a deuterium- and nitrogen-doped monocrystalline silicon ingot by using magnetic field-applied Czochralski method. The impurity level of the melt and the grown crystal can be reduced according to the present application. By applying rapid thermal annealing to the nitrogen-doped monocrystalline silicon sheet, crystal originated particle defects in surface area of the silicon sheet can be eliminated. The storage of deuterium atoms in gaps of the silicon sheet is able to reduce the contents of oxygen and carbon impurities. Moreover, the deuterium atoms can bind with dangling bonds at the interface between the gate dielectric layer and the semiconductor to form a stable structure, thereby penetration of hot carriers can be prevented, leakage current can be reduced, and device properties and reliability can be enhanced. While the silicon sheet is doped with deuterium, nitrogen and barium, the amount of the doped silicon sheet applied in the method can be lowered, and the manufacture cost can be reduced accordingly. 1. A method for growing monocrystalline silicon by using Czochralski method , comprising:step (1): melting a deuterium-, nitrogen- and barium-doped silicon sheet and a polycrystalline silicon in a crucible; andstep (2): forming a deuterium- and nitrogen-doped monocrystalline silicon ingot by using magnetic field-applied Czochralski method.2. The method of further comprises feeding a gas containing argon simultaneously with the silicon sheet and the polycrystalline silicon into the crucible.3. The method of claim 1 , wherein the step (1) further comprises preparing the deuterium- claim 1 , nitrogen- and barium-doped silicon sheet by:forming a film of silicon nitride on a surface of the silicon sheet, anddoping ...

METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO EPITAXIAL GROWTH

Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process. 1. A method , comprising:removing carbon containing contaminants from a surface of a substrate by performing a reducing process on the substrate in a first processing chamber; thentransferring the substrate from the first processing chamber to a second processing chamber; thenremoving an oxide layer from the surface of the substrate by performing an etch process on the substrate in the second processing chamber; and thenforming an epitaxial layer on the surface of the substrate.2. The method of claim 1 , wherein the reducing process comprises forming a hydrogen containing plasma in the first processing chamber.34-. (canceled)5. The method of claim 1 , wherein the carbon containing contaminants are a first portion of carbon containing contaminants claim 1 , and further comprising performing an oxidizing process following the reducing process to remove a second portion of carbon containing contaminants.6. The method of claim 5 , wherein the oxidizing process is performed in the first processing chamber.7. The method of claim 1 , further comprising performing an oxidizing process on the substrate prior to the reducing process.8. The method of claim 7 , wherein the oxidizing process is performed in the first processing chamber.9. A method claim 7 , comprising:removing carbon containing contaminants from a surface of a substrate by exposing the surface of the substrate to an ammonia containing plasma in a first processing chamber; thentransferring the substrate from the first processing chamber to a second processing chamber; thenremoving an oxide layer from the surface of the substrate by performing an etch process on the substrate in the ...

POLYCRYSTALLINE SILICON ROD AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON ROD

To provide polycrystalline silicon suitable as a raw material for production of single-crystalline silicon. A D/L value is set within the range of less than 0.40 when multiple pairs of silicon cores are placed in a reaction furnace in production of a polycrystalline silicon rod having a diameter of 150 mm or more by deposition according to a chemical vapor deposition process and it is assumed that the average value of the final diameter of the polycrystalline silicon rod is defined as D (mm) and the mutual interval between the multiple pairs of silicon cores is defined as L (mm). 1. A polycrystalline silicon rod grown by deposition according to a chemical vapor deposition process , wherein{'sub': v', 'p', 'v', 'p, 'the polycrystalline silicon rod does not comprise any needle crystal having a shape where a grain size din a direction vertical to a long axis direction of the polycrystalline silicon rod is larger than a grain size din a direction in parallel with the long axis direction of the polycrystalline silicon rod (d>d).'}2. A polycrystalline silicon rod grown by deposition according to a chemical vapor deposition process , whereinwhen a surface of a plate-like sample collected so that a direction vertical to a long axis direction of the polycrystalline silicon rod corresponds to a principal plane direction is etched by a mixed liquid of hydrofluoric acid and nitric acid, the etched surface does not comprise any locally heterogeneous crystal having a grain size of 10 μm or more.3. A polycrystalline silicon rod grown by deposition according to a chemical vapor deposition process , whereinthe polycrystalline silicon rod has a diameter (2R) of 150 mm or more, and{'sub': n-1', 'n-1, 'when an X-ray diffraction chart obtained by in-plane rotation with a center of a plate-like sample collected from each of a center region, an R/2 region and an outer region of the polycrystalline silicon rod, as a center of rotation, at an angle φ of 180 degrees is determined, a degree ...

METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER

The present invention provides a method for manufacturing a silicon single crystal wafer, wherein, under a growth condition that V/G≧1.05×(V/G)crt is achieved where V is a growth rate in growth of the silicon single crystal ingot, G is a temperature gradient near a crystal growth interface, and (V/G)crt is a value of V/G when a dominant point defect changes from a vacancy to interstitial Si, a silicon single crystal ingot having oxygen concentration of 7×10atoms/cm(ASTM'79) or less is grown, and a silicon single crystal wafer which includes a region where the vacancy is dominant and in which FPDs are not detected by preferential etching is manufactured from the grown silicon single crystal ingot. As a result, there is provided the method that enables manufacturing a low-oxygen concentration silicon single crystal wafer that can be preferably used for a power device with good productivity at a low cost. 18-. (canceled)9. A method for manufacturing a silicon single crystal wafer , comprising: growing a silicon single crystal ingot with the use of a CZ single crystal manufacturing apparatus; and slicing out a silicon single crystal wafer from the grown silicon single crystal ingot ,{'sup': 17', '3, "wherein, under a growth condition that V/G≧1.05×(V/G)crt is achieved where V is a growth rate in growth of the silicon single crystal ingot, G is a temperature gradient near a crystal growth interface, and (V/G)crt is a value of V/G when a dominant point defect changes from a vacancy to interstitial Si, a silicon single crystal ingot having oxygen concentration of 7×10atoms/cm(ASTM'79) or less is grown, and a silicon single crystal wafer which includes a region where the vacancy is dominant and in which FPDs are not detected by preferential etching is manufactured from the grown silicon single crystal ingot."}10. The method for manufacturing a silicon single crystal wafer according to claim 9 ,{'sup': 17', '3, "wherein, before growing the silicon single crystal ingot, a ...

Germanium enriched silicon material for making solar cells

Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.

RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFORMANCE, STABILITY, AND MANUFACTURABILITY

A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot. 1. A multilayer structure comprising:{'sup': 16', '3', '13', '3, 'a single crystal silicon wafer handle substrate comprising two major, generally parallel surfaces, one of which is a front surface of the single crystal silicon wafer handle substrate and the other of which is a back surface of the single crystal silicon wafer handle substrate, a circumferential edge joining the front and back surfaces of the single crystal silicon wafer handle substrate, and a central plane of the single crystal silicon wafer handle substrate between the front and back surfaces of the single crystal silicon wafer handle substrate, wherein the single crystal silicon wafer handle substrate has a bulk resistivity of at least about 5000 ohm-cm, an interstitial oxygen concentration of less than about 1×10atoms/cm, and a nitrogen concentration of at least about 1×10atoms/cm;'}a trap rich layer in interfacial contact with the front surface of the single crystal silicon wafer handle substrate;a dielectric layer in interfacial contact with the trap rich layer; anda single crystal semiconductor device layer in interfacial contact with the dielectric layer.2. The multilayer structure of wherein the single crystal semiconductor handle substrate comprises a silicon wafer sliced from a single crystal silicon ingot grown by the float zone method.3. The multilayer structure of wherein the silicon wafer sliced from a single crystal silicon ingot grown by the float zone method has a diameter of at least about 150 mm.4. The multilayer structure of wherein the silicon wafer sliced from a single crystal silicon ingot grown by the float zone method has a diameter of at least about 200 mm.5. The multilayer structure of ...

METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF DIAMOND OR IRDIUM MATERIAL AND SUBSTRATE FOR EPITAXICALLY GROWING A MONOCRYSTALLINE LAYER OF DIAMOND OR IRIDIUM MATERIAL

A process for producing a monocrystalline layer of diamond or iridium material comprises transferring a monocrystalline seed layer of SrTiOmaterial onto a carrier substrate of silicon material, followed by epitaxial growth of the monocrystalline layer of diamond or iridium material. 1. A process for producing a monocrystalline layer of diamond material , comprising transferring a monocrystalline seed layer of SrTiOmaterial to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of diamond material.2. The process of claim 1 , wherein the monocrystalline seed layer has a thickness of less than 10 μm claim 1 , preferably less than 2 μm claim 1 , and more preferably less than 0.2 μm.3. The process of claim 1 , wherein the transfer of the monocrystalline seed layer of SrTiOmaterial to the carrier substrate of silicon material comprises joining a monocrystalline substrate of SrTiOmaterial to the carrier substrate followed by thinning the monocrystalline substrate of SrTiOmaterial.4. The process of claim 3 , wherein the thinning step comprises forming a weakened zone delimiting a portion of the monocrystalline substrate of SrTiOmaterial to be transferred to the carrier substrate of silicon material.5. The process of claim 4 , wherein forming the weakened zone comprises implanting atomic and/or ionic species into the monocrystalline substrate of SrTiOmaterial.6. The process of claim 1 , wherein thinning the monocrystalline substrate of SrTiOmaterial comprises detaching at the weakened zone so as to transfer the portion of the monocrystalline substrate of SrTiOmaterial to the carrier substrate of silicon material.7. The process of claim 3 , wherein joining the monocrystalline substrate of SrTiOmaterial to the carrier substrate comprises molecular adhesion of the monocrystalline substrate of SrTiOmaterial to the carrier substrate.8. The process of claim 1 , wherein the monocrystalline seed layer of SrTiOmaterial is in the form of a ...

BORON-DOPED N-TYPE SILICON TARGET

Sputter targets and methods of making same. The targets comprise B doped n-type Si. The targets may be made from single crystal boron doped p-type Si ingot made by the CZ method. Resistivities along the length of the crystal are measured, and blanks may be cut perpendicular to the ingot central axis at locations having resistivities of from about 1-20 ohm.cm. The blanks are then formed to acceptable shapes suitable for usage as sputter targets in PVD systems. No donor killing annealing is performed on the ingot or blanks. 1. Sputter target comprising B doped n-type Si having a resistivity of about 0.01-700 ohm.cm.2. Sputter target as recited in wherein said resistivity is about 1-20 ohm.cm.3. Sputter target as recited in wherein said resistivity is about 1-12 ohm.cm.4. Sputter target as recited in wherein said Si has an oxygen content of about 0.1 to about 200 ppm.5. Sputter target as recited in wherein said Si has an oxygen content of about 1 to about 60 ppm.6. Sputter target as recited in having a B content of about 0.001 to 1 ppm.7. Sputter target made by obtaining single crystal ingot of B doped p-type Si having a resistivity of about 1-60 ohm.cm comprising forming blanks from said ingot claim 1 , measuring the resistivity of said blanks claim 1 , selecting blanks having resistivities of from about 1-20 ohm.cm claim 1 , said selected blanks not being further heat treated at temperatures of about 400° C. and higher claim 1 , and forming said blanks into shapes suitable for use as a sputter target.8. Sputter target as recited in wherein said step of selecting blanks comprises selecting blanks having resistivities of about 1-12 ohm.cm.9. Method of making a B-doped p-typed Si sputter target comprising:a) obtaining a single crystal Si ingot comprising B prepared by the CZ method, said ingot having a central axis,b) measuring resistivities of said ingot at at least one location along said central axis,c) determining locations along said central axis wherein the ...

METHOD AND APPARATUS FOR MANUFACTURING MONOCRYSTALLINE SILICON

A method for manufacturing a monocrystalline silicon with Czochralski process, including: providing polycrystalline silicon and dopant to quartz crucible in single crystal furnace and vacuumizing, melting the polycrystalline silicon under protective gas to obtain silicon melt; after temperature of the silicon melt is stable, immersing seed crystal into the silicon melt to start seeding, lifting a shield away from surface of the silicon melt to adjust distance between the shield and the silicon melt to first preset distance; after seeding, performing shouldering to pull the crystal to increase diameter of the crystal to preset width; starting constant-diameter body growth, lowering the shield towards the surface of the silicon melt to adjust the distance to second preset distance; after growth, entering a tailing stage during which the diameter of the crystal is reduced until the crystal is separated from the silicon melt; and cooling the crystal to obtain monocrystalline silicon. 1. A method for manufacturing a monocrystalline silicon , comprising:providing a polycrystalline silicon and a dopant to a quartz crucible;placing the quartz crucible in a single crystal furnace and vacuumizing the furnace, and melting the polycrystalline silicon under an atmosphere of a protective gas to obtain a silicon melt;after a temperature of the silicon melt is stable, immersing a seed crystal into the silicon melt to start a seeding process, during the seeding process, lifting a water-cooling heat shield having a flat bottom in a direction away from a surface of the silicon melt to adjust a distance between the bottom of the water-cooling heat shield and the surface of the silicon melt to a first preset distance, wherein the first preset distance is in a range from 40 mm to 55 mm, and a speed of the seeding process is in a range from 240 mm/h to 290 mm/h;after the seeding process is completed, performing a shouldering process to continuously pull a crystal with a first pulling ...

Method of Manufacturing CZ Silicon Wafers

A method of manufacturing CZ silicon wafers is proposed. The method includes extracting a CZ silicon ingot over an extraction time period from a silicon melt including dopants being predominantly n-type. The method further includes introducing boron into the CZ silicon ingot over at least part of the extraction time period by controlling a boron supply to the silicon melt by a boron source. The method further includes determining a specific resistivity, a boron concentration, and a carbon concentration along a crystal axis of the CZ silicon ingot. The method further includes slicing the CZ silicon ingot or a section of the CZ silicon ingot into CZ silicon wafers. The method further includes determining at least two groups of the CZ silicon wafers depending on at least two of the specific resistivity, the boron concentration, and the carbon concentration. 1. A method of manufacturing CZ silicon wafers , the method comprising:extracting a CZ silicon ingot over an extraction time period from a silicon melt comprising dopants being predominantly n-type;introducing boron into the CZ silicon ingot over at least part of the extraction time period by controlling a boron supply to the silicon melt by a boron source;determining a specific resistivity, a boron concentration, and a carbon concentration along a crystal axis of the CZ silicon ingot;slicing the CZ silicon ingot or a section of the CZ silicon ingot into CZ silicon wafers; anddetermining at least two groups of the CZ silicon wafers depending on at least two of the specific resistivity, the boron concentration, and the carbon concentration.2. The method of the claim 1 , wherein a boron concentration of each of the CZ silicon wafers of one of the at least two groups is smaller than 3.0×10cm claim 1 , and wherein a boron concentration of each of the CZ silicon wafers of another one of the at least two groups is larger than 3.0×10cm.3. The method of claim 1 , wherein a carbon concentration of each of the CZ silicon ...

METHOD OF GROWING SILICON SINGLE CRYSTAL

Disclosed is a method of growing a silicon single crystal. The method includes preparing a silicon melt, adding a dopant having a lower melting point than the silicon melt to the silicon melt, and growing a silicon single crystal from the silicon melt to which the dopant is added in the order of a neck, a shoulder, and a body. During the silicon single crystal growth, the length of a neck is adjusted in the range of 35 to 45 cm, and a ratio of inert gas quantity to pressure of a chamber is adjusted to 1.5 or less. 1. A method of growing a silicon single crystal , the method comprising:preparing a silicon melt;adding a dopant having a lower melting point than the silicon melt to the silicon melt; andgrowing a silicon single crystal from the silicon melt to which the dopant is added in the order of a neck, a shoulder, and a body,wherein a length of the neck is adjusted to 35 to 45 cm, and a ratio of inert gas quantity to pressure of a chamber is adjusted to 1.5 or less in the growing of the silicon single crystal.2. The method according to claim 1 , wherein the adjusting of the ratio of inert gas quantity to pressure of a chamber is applied to from growth of the shoulder in the growing of the silicon single crystal.3. The method according to claim 1 , wherein a rotation rate of the silicon single crystal is in the range of 12 to 16 rpm in the growing of the silicon single crystal.4. The method according to claim 1 , wherein a rotation rate of a crucible containing the silicon melt is in the range of 12 to 16 rpm in the growing of the silicon single crystal.5. The method according to claim 1 , wherein a solid-liquid interface of the silicon single crystal is controlled to have a step difference of 20% or less between the center of the solid-liquid interface and an edge portion of the solid-liquid interface in the growing of the silicon single crystal.6. The method according to claim 5 , wherein the control of the step difference of the solid-liquid interface is applied ...

METHODS FOR PREPARING LAYERED SEMICONDUCTOR STRUCTURES AND RELATED BONDED STRUCTURES

Methods for preparing silicon-on-insulator structures and related intermediate structures are disclosed. In some embodiments, a single crystal silicon seed crystal is bonded to an amorphous silicon layer disposed on a substrate and the amorphous layer is crystallized to form a monocrystalline silicon layer. 1. A method for preparing a layered semiconductor structure having a monocrystalline silicon device layer , the method comprising:depositing an amorphous silicon layer on a substrate, the amorphous silicon layer and substrate forming an amorphous layer-substrate interface;bonding a single crystal silicon seed wafer on the amorphous silicon layer to form a bonded structure, the single crystal silicon seed wafer and amorphous silicon layer forming a seed-amorphous layer interface;annealing the bonded structure to crystallize the amorphous silicon layer and generate a monocrystalline silicon device layer from the amorphous silicon layer; andcleaving the bonded structure to separate the single crystal silicon seed wafer from the bonded structure and form a layered product structure comprising the substrate and the monocrystalline silicon device layer.2. The method as set forth in wherein the amorphous silicon layer is crystallized from the seed-amorphous layer interface toward the amorphous layer-substrate interface.3. The method as set forth in wherein the substrate is selected from the group consisting of a silicon wafer claim 1 , quartz claim 1 , sapphire claim 1 , ceramics claim 1 , glass claim 1 , germanium claim 1 , silicon germanium claim 1 , gallium nitride and aluminum nitride.4. The method as set forth in wherein the amorphous silicon layer has a bonding surface claim 1 , the bonding surface having a surface roughness from about 0.1 nm to about 1.0 nm at a scan size of about 30 μm by about 30 μm prior to bonding the single crystal silicon seed wafer on the amorphous silicon layer to form the bonded structure.5. The method a set forth in wherein the single ...

SEED LAYERS AND PROCESS OF MANUFACTURING SEED LAYERS

This invention relates seed layers and a process of manufacturing seed layers for casting silicon suitable for use in solar cells or solar modules. The process includes the step of positioning tiles with aligned edges to form seams on a suitable surface, and the step of joining the tiles at the seams to form a seed layer. The step of joining includes heating the tiles to melt at least a portion of the tiles, contacting the tiles at both ends of at least one seam with electrodes, using plasma deposition of amorphous silicon, applying photons to melt a portion of the tiles, and/or layer deposition. Seed layers of this invention include a rectilinear shape of at least about 500 millimeters in width and length. 1. A process for manufacturing silicon seed layers suitable for use in the manufacture of solar cells or solar modules , the process comprising:positioning tiles with aligned edges to form seams on a suitable surface; andjoining the tiles at the seams to form a seed layer.2. The process of claim 1 , wherein the joining comprises:heating the tiles to melt at least a portion of the tiles and close the seams; andcooling the seed layer.3. The process of claim 2 , further comprising:repositioning the seed layer with respect to a top side and a bottom side following cooling the seed layer;reheating the seed layer to melt at least a previously unmelted portion of the seed layer and close the seams; andrecooling the seed layer.4. The process of claim 2 , wherein the cooling comprises about 100 degrees Celsius an hour.5. The process of claim 1 , wherein the joining comprises:contacting the tiles at both ends of at least one seam with electrodes;flowing electrical current through the tiles between the electrodes to melt at least a portion of the tiles and close the seams;optionally repeating the contacting and the flowing for each seam in the layer; andcooling the seed layer.6. The process of claim 5 , wherein the electrodes remain stationary with respect to the tiles ...

Gas Storage System

Among other things, a gas storage system includes a group of capsules and an activation element coupled to the group. The group of capsules are formed within a substrate and contain gas stored at a relatively high pressure compared to atmospheric pressure. The activation element is configured to deliver energy in an amount sufficient to cause at least one of the capsules to release stored gas. 1. A gas storage system comprising:a first substrate having plural groups of capsules formed within the first substrate, with each of the capsules containing gas stored at a relatively high pressure compared to atmospheric pressure;a plurality of activation elements, each one coupled to a corresponding one of the plurality of groups, the activation element configured to deliver energy in an amount sufficient to cause at least one of the capsules each of the plurality of groups to release stored gas;a second substrate having a second plurality of groups of capsules formed within the second substrate, with each of the capsules of the second plurality of groups of capsules containing gas stored at a relatively high pressure compared to atmospheric pressure; anda second plurality of activation elements, each one coupled to a corresponding one of the second plurality of groups, the activation element configured to deliver energy in an amount sufficient to cause at least one of the capsules in the second plurality of groups of capsules to release stored gas.2. The gas storage system of further comprising:control electronics coupled to the activation elements, the control electronics configured to selectively deliver electrical signal to control operation of a selected one of the activation elements.3. The gas storage system of wherein the capsules are interconnected by channels that allow gas to flow between the capsules claim 1 , the capsules configured to release the gas simultaneously when at least one of the capsules is activated by the activation element.4. The gas storage ...

METHOD FOR GROWING GERMANIUM/SILICON-GERMANIUM SUPERLATTICE

A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (SLS) using an ultra-high vacuum-chemical vapor deposition (UHV-CVD) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth. Flushing hydrogen between the layer growths creates abrupt junctions between superlattice structure (SLS) layers. Steps include flowing a mixture of phosphine and germane gases over a germanium seed layer. This in-situ doped germanium growth step produces an n-doped germanium layer. Some of the phosphorus diffuses into the underlying germanium and reduces the stress in the underlying germanium that is initially created by the lattice mismatch between germanium and silicon. Phosphine can be replaced by diborane if a p-doped layer is desired. The reduction of stress results in a smooth bulk germanium growth. 1. A method of growing a germanium/silicon-germanium superlattice structure (SLS) comprising the steps of:{'sup': '−4', '(a) preconditioning a silicon substrate with hydrogen gas with a pressure at most equal to approximately 3EmBar;'}(b) reducing temperature and pressure;{'sup': '−4', '(c) providing germane gas with a pressure at most equal to approximately 5EmBar flowing over said silicon substrate to form a germanium seed layer;'}(d) heating in approximately a vacuum;{'sup': '−4', '(e) flowing gasses with a pressure at most equal to approximately 5EmBar over said germanium seed layer to form a doped germanium layer;'}{'sup': '−4', '(f) flowing germane gas with a pressure at most equal to approximately 5EmBar over said germanium layer forming a first buffer;'}{'sup': '−4', '(g) flowing at least germane gas over said first buffer with a pressure at most equal to approximately 5EmBar, forming a layer of single-crystal comprising at least germanium;'}(h) flushing with hydrogen or allowing to remain idle;{'sup': '−4', '(i) ...

DRIVING UNIT MEASURING APPARATUS AND SILICON CRYSTAL GROWING APPARATUS HAVING SAME

The present invention provides a driving unit measuring apparatus, the apparatus including: a crucible support for supporting a crucible; a pulling unit for elevating or rotating a seed at an upper portion of the crucible; a crucible driving unit for rotating or elevating the crucible support; a flat nut detachably coupled to the pulling unit; a crucible shaft inspection jig detachably coupled to the crucible driving unit; and a displacement measuring unit coupled to the flat nut and the crucible shaft inspection jig and measuring at least one of elevation and rotational displacement of the pulling unit and the crucible driving unit. 1. A driving unit measuring apparatus , the apparatus comprising:a crucible support for supporting a crucible;a pulling unit for elevating or rotating a seed at an upper portion of the crucible;a crucible driving unit for rotating or elevating the crucible support;a flat nut detachably coupled to the pulling unit;a crucible shaft inspection jig detachably coupled to the crucible driving unit; anda displacement measuring unit coupled to the flat nut and the crucible shaft inspection jig and measuring at least one of elevation and rotational displacement of the pulling unit and the crucible driving unit.2. The apparatus of claim 1 , wherein the crucible driving unit includes:a crucible shaft for rotating the crucible support;a crucible shaft rotating part for rotating the crucible shaft; anda crucible shaft pulling part for moving the crucible shaft up and down.3. The apparatus of claim 2 , wherein the crucible shaft inspection jig is coupled to be substituted for the crucible shaft.4. The apparatus of claim 3 , wherein the crucible shaft inspection jig includes:a base plate;a shaft having one end coupled to a central region of the base plate; anda tapered bush coupled to the other end of the shaft.5. The apparatus of claim 4 , wherein the base plate has a disk shape.6. The apparatus of claim 5 , wherein the base plate has a flat upper ...

POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS

A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be non-conductive with respect to a screwing part formed in the metal electrode. A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be fixed to the metal electrode by a fixing mechanism part, and the electrode adapter may be non-conductive with respect to the fixing mechanism part. 1. A polycrystalline silicon manufacturing apparatus , which manufactures a polycrystalline silicon by a Siemens method , comprising an electrode adapter that electrically connects a core wire holder and a metal electrode , whereinthe electrode adapter is non-conductive with respect to a screwing part formed in the metal electrode.2. A polycrystalline silicon manufacturing apparatus , which manufactures a polycrystalline silicon by a Siemens method , comprising an electrode adapter that electrically connects a core wire holder and a metal electrode , whereinthe electrode adapter is fixed to the metal electrode by a fixing mechanism part, and the electrode adapter is non-conductive with respect to the fixing mechanism part.3. The polycrystalline silicon manufacturing apparatus according to claim 1 , wherein the electrode adapter and the core wire holder are made of an identical material.4. The polycrystalline silicon manufacturing apparatus according to claim 1 , wherein at least one of the electrode adapter and the core wire holder is made of a carbon material.5. The polycrystalline silicon manufacturing apparatus according to claim 1 , wherein a conductive member is inserted between conductive parts of the electrode adapter and the metal electrode.6. The polycrystalline silicon manufacturing apparatus ...

METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER

A manufacturing method of an epitaxial silicon wafer uses a silicon wafer containing phosphorus, having a resistivity of less than 1.0 mΩ·cm. The silicon wafer has a main surface to which a (100) plane is inclined and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 0°5′ to 0°25′ with respect to an axis orthogonal to the main surface. The manufacturing method includes: annealing the silicon wafer at a temperature from 1200 degrees C. to 1220 degrees C. for 30 minutes or more under argon gas atmosphere (argon-annealing step); etching a surface of the silicon wafer (prebaking step); and growing the epitaxial film at a growth temperature ranging from 1100 degrees C. to 1165 degrees C. on the surface of the silicon wafer (epitaxial film growth step).

MANUFACTURING METHOD OF SILICON MONOCRYSTAL

A manufacturing method of a silicon monocrystal uses a monocrystal pulling-up apparatus including: a chamber; a crucible disposed in the chamber and configured to receive dopant-added melt; a pulling-up portion that pulls up a seed crystal after the seed crystal is in contact with the dopant-added melt; a cooler disposed above the crucible to cool a monocrystal that is being grown; and a magnetic field applying unit disposed outside the chamber to apply a horizontal magnetic field to the dopant-added melt. The method includes: during a formation of a shoulder of the silicon monocrystal, starting the formation while moving the cooler downward; stopping the cooler from moving downward at a stop position before a top of the shoulder reaches a level of a lower end of the cooler; and continuing the formation of the shoulder while the cooler is kept at the stop position 1. A manufacturing method of a silicon monocrystal using a monocrystal pulling-up apparatus comprising a chamber; a crucible disposed in the chamber and configured to receive dopant-added melt in which an n-type dopant is added to silicon melt; a pulling-up unit configured to pull up a seed crystal after the seed crystal is in contact with the dopant-added melt; a cooler disposed above the crucible and configured to cool the silicon monocrystal that is being grown; and a magnetic field applying unit disposed outside the chamber and configured to apply a horizontal magnetic field to the dopant-added melt , the method comprising:during a formation of a shoulder of the silicon monocrystal, starting the formation of the shoulder while moving the cooler downward;stopping the cooler from moving downward at a stop position before a top of the shoulder reaches a level of a lower end of the cooler; andcontinuing the formation of the shoulder while the cooler is kept at the stop position.2. The manufacturing method of a silicon monocrystal according to claim 1 , whereina level of the stop position of the cooler is ...

SILICON BLOCK, METHOD FOR PRODUCING THE SAME, CRUCIBLE OF TRANSPARENT OR OPAQUE FUSED SILICA SUITED FOR PERFORMING THE METHOD, AND METHOD FOR THE PRODUCTION THEREOF

A method for producing a solar crucible includes providing a crucible base body of transparent or opaque fused silica having an inner wall, providing a dispersion containing amorphous SiOparticles, applying a SiO-containing slip layer to at least a part of the inner wall by using the dispersion, drying the slip layer to form a SiO-containing grain layer and thermally densifying the SiO-containing grain layer to form a diffusion barrier layer. The dispersion contains a dispersion liquid and amorphous SiOparticles that form a coarse fraction and a fine fraction with SiOnanoparticles. The weight percentage of the SiOnanoparticles based on the solids content of the dispersion is in the range between 2 and 15% by weight. The SiO-containing grain layer is thermally densified into the diffusion barrier layer through the heating up of the silicon in the crystal growing process. 1. A method for producing a solar crucible with a rectangular shape for use in a crystal growing process for silicon , the method comprising:providing a crucible base body of transparent or opaque fused silica comprising an inner wall;{'sub': '2', 'providing a dispersion containing amorphous SiOparticles;'}{'sub': '2', 'applying a SiO-containing slip layer with a layer thickness of at least 0.1 mm to at least a part of the inner wall by using the dispersion;'}{'sub': '2', 'drying the slip layer so as to form a SiO-containing grain layer; and'}{'sub': '2', 'claim-text': [{'sub': 2', '2, 'wherein the dispersion contains a dispersion liquid and the amorphous SiOparticles that form a coarse fraction with particle sizes in the range between 1 μm and 50 μm and a fine fraction with SiOnanoparticles with particle sizes of less than 100 nm,'}, {'sub': '2', 'wherein a weight percentage of the SiOnanoparticles based on a solids content of the dispersion is in the range between 2 and 15% by wt., and'}, {'sub': '2', 'wherein the SiO-containing grain layer is thermally densified into the diffusion barrier layer ...

Method for growing beta-ga2o3-based single crystal

Provided is a method for growing a β-Ga 2 O 3 -based single crystal, whereby it becomes possible to grow a β-Ga 2 O 3 -based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a β-Ga 2 O 3 -based single crystal includes growing a plate-shaped Sn doped β-Ga 2 O 3 -based single crystal in the direction of the b axis using a seed crystal.

NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TREATED WAFER FORMED THEREFROM HAVING RADIALLY UNIFORMLY DISTRIBUTED OXYGEN PRECIPITATION DENSITY AND SIZE

Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided. 1. A method of producing a nitrogen-doped CZ silicon crystal ingot , the method comprising:{'sup': 13', '3', '15', '3, 'pulling the silicon crystal ingot from molten silicon at a pull rate of from about 0.85 mm per minute to about 1.5 mm per minute thereby forming the nitrogen-doped CZ silicon crystal ingot, wherein the nitrogen-doped CZ silicon crystal ingot has a surface temperature gradient of from about 10° K per cm to about 35° K per cm at an average crystal surface temperature of from about 1300° C. to about 1415° C., and wherein the silicon crystal ingot has a nitrogen concentration of from about 1*10atoms per cmto about 1*10atoms per cm.'}2. The method of wherein a wafer sliced from the nitrogen-doped CZ silicon crystal ingot and thermally treated at 780° C. for 3 hours and then at 1000° C. for 16 hours is characterized by:{'sup': 8', '3', '10', '3, '(1) an edge band in a region extending from about 1000 μm to the edge of said wafer and to the edge of said wafer wherein the edge band comprises oxygen precipitates having an average diameter of from about 30 nm to about 100 nm and an oxygen precipitation density of from about 1*10atoms per cmto about 1*10atoms per cm,'}(2) an increase in radial bulk micro defect size in a region ...

Feed system for crystal growing systems

A system for growing a crystal ingot from a melt includes a housing and a feed system. The housing defines a growth chamber and an ingot removal chamber positioned above the growth chamber. The feed system includes an enclosure, a feed material reservoir positioned within the enclosure, and a feed channel including an intake end and an outlet end. The intake end is configured to receive feed material from the feed material reservoir. The housing has an opening in communication with the removal chamber and a connector proximate the opening, and the enclosure has an opening and a connector configured to mate with the housing connector. The feed channel is moveable between a retracted position and an extended position in which the feed channel extends through the opening in the housing and the outlet end is positioned within the removal chamber.

Single-Crystal Production Equipment

A single-crystal production equipment includes a transparent quartz tube, in which a seed crystal is placed; a powder raw material supply apparatus, which is arranged above the transparent quartz tube and supplies a powder raw material onto the seed crystal placed in the transparent quartz tube; and an infrared ray irradiation apparatus, which is arranged outside the transparent quartz tube and applies an infrared ray to the upper surface of the seed crystal placed in the transparent quartz tube as well as the powder raw material supplied into the transparent quartz tube by the powder raw material supply apparatus. The infrared ray melts the upper surface of the seed crystal and the powder raw material and subsequently the resulting melt solidifies on the seed crystal to provide a single crystal. 1. A single-crystal production equipment comprising , at least:a transparent quartz tube, in which a seed crystal is placed;a powder raw material supply apparatus, which is arranged above said transparent quartz tube and supplies a powder raw material onto said seed crystal placed in said transparent quartz tube; andan infrared ray irradiation apparatus, which is arranged outside said transparent quartz tube and applies an infrared ray to the upper surface of said seed crystal placed in said transparent quartz tube as well as said powder raw material supplied into said transparent quartz tube by said powder raw material supply apparatus,wherein said single-crystal production equipment is configured to produce a single crystal by applying said infrared ray from said infrared ray irradiation apparatus into said transparent quartz tube so as to melt an upper surface of said seed crystal and said powder raw material and subsequently solidifying the resulting melt on said seed crystal.2. The single-crystal production equipment according to claim 1 , wherein an auxiliary heating apparatus claim 1 , which heats an outer part of said seed crystal claim 1 , is arranged.3. The single ...

CRUCIBLE FOR INGOT GROWER

The present invention relates to a crucible for an ingot growing apparatus capable of increasing the life span of a graphite crucible. One embodiment of the present invention provides a crucible for an ingot growing apparatus including: a quartz crucible containing a silicon melt and having a lower surface part with a curved shape; a graphite crucible accommodating the quartz crucible and having a body shape divided into at least two parts with respect to a lower surface thereof; and an inner supporter supported between the lower surface of the quartz crucible and the graphite crucible. 1. A crucible for an ingot growing apparatus comprising:a quartz crucible containing a silicon melt and having a lower surface part with a curved shape;a graphite crucible accommodating the quartz crucible and having a body shape divided into at least two parts with respect to a lower surface thereof; andan inner supporter supported between the lower surface of the quartz crucible and the graphite crucible.2. The crucible for the ingot growing apparatus of claim 1 , wherein the inner supporter is provided with a rounded upper surface groove on which the lower surface part of the quartz crucible is seated.3. The crucible for the ingot growing apparatus of claim 1 , wherein the graphite crucible is configured with a side surface part with a cylindrical shape supporting a side surface of the quartz crucible and a side surface of the inner supporter claim 1 , and with a lower surface part connected to a lower end of the side surface part.4. The crucible for the ingot growing apparatus of claim 1 , further comprising a gas discharge flow path for discharging a gas generated between the quartz crucible and the graphite crucible to the outside of the graphite crucible.5. The crucible for the ingot growing apparatus of claim 4 , wherein the gas discharge flow path is provided in plural by a predetermined distance along a circumferential direction of the graphite crucible.6. The crucible for ...

Buffer layer for Gallium Nitride-on-Silicon epitaxy

Embodiments generally relate to multi-layer buffer structures on silicon. One method for forming such a structure comprises: providing a (111) silicon substrate; using ALD to deposit a first layer of AlN on the substrate; using first and second precursor materials at a first V-III ratio to deposit a plurality of AlN islands forming a second layer on the first layer; using the first and second precursor materials at a second V-III ratio, to deposit a third layer of AlN overlying and in contact with the islands and the first layer between the islands, forming domains; and using the first and second precursor materials at a third V-III ratio, to deposit a fourth layer of AlN on the third layer. All depositions occur at one predetermined temperature range. The fourth layer is characterized by a fourth layer top surface that is anatomically smooth. 1. A method for forming a multi-layer AlN buffer structure on silicon , the method comprising:providing a (111) oriented silicon substrate having a top surface;using atomic layer deposition to deposit, at a predetermined temperature range, a first layer of AlN on the top surface;using first and second precursor materials, characterized by a first V-III ratio, to deposit, at the predetermined temperature range, a plurality of AlN islands forming a second layer overlying and in contact with the first layer;using the first and second precursor materials, characterized by a second V-III ratio, to deposit, at the predetermined temperature range, a third layer of AlN, the third layer overlying and in contact with the islands and the first layer between the islands, forming domains; andusing the first and second precursor materials, characterized by a third V-III ratio, to deposit, at the predetermined temperature range, a fourth layer of AlN, the fourth layer overlying and in contact with the third layer, wherein the fourth layer is characterized by a fourth layer top surface that is anatomically smooth.2. The method of claim 1 , ...

Integrated system for semiconductor process

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, one or more pass through chambers, one or more outgassing chambers, a first transfer chamber, a second transfer chamber, and one or more process chambers. The pre-clean chamber and the etch chamber are coupled to a first transfer chamber. The one or more pass through chambers are coupled to and disposed between the first transfer chamber and the second transfer chamber. The one or more outgassing chambers are coupled to the second transfer chamber. The one or more process chambers are coupled to the second transfer chamber.

METHOD FOR PURIFICATION OF SILICON

The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals. 1. A method for purification of silicon , comprising:recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals;washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon; and,directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.2. The method of claim 1 , further comprising sand blasting or ice blasting the final directionally solidified-silicon crystals to provide sand- or ice-blasted final directionally solidified-silicon crystals claim 1 , wherein the average purity of the sand- or ice-blasted final directionally solidified-silicon crystals is greater than the average purity of the final directionally solidified-silicon crystals.3. The method of claim 1 , further comprising removing a portion of the final directionally solidified-silicon crystals to provide a trimmed final directionally solidified-silicon crystals claim 1 , wherein the average purity of the trimmed final directionally solidified-silicon crystals is greater than the average purity of the final directionally solidified-silicon crystals.4. The method of claim 1 , wherein the recrystallization of starting material-silicon comprises:contacting the starting material-silicon with a solvent metal comprising the aluminum, sufficient to provide a first ...

Method and apparatus for precleaning a substrate surface prior to epitaxial growth

Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER

A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient. 18-. (canceled)9. A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient , comprising:performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out.12. The method for a heat treatment of a silicon single crystal wafer according to claim 11 , wherein the silicon single crystal wafer is cut out from a silicon single crystal doped with nitrogen at a concentration of 5×1015 atoms/cm3 or less.13. The method for a heat treatment of a silicon single crystal wafer according to claim 9 , wherein the silicon single crystal wafer is cut out from a silicon single crystal without a defect due to Interstitial-Si.14. The method for a heat treatment of a silicon single crystal wafer according to claim 10 , wherein the silicon single crystal wafer is cut out from a silicon single crystal without a defect due to Interstitial-Si.15. The method for a heat treatment of a silicon single crystal wafer according to claim 11 , wherein the silicon single crystal wafer is cut out ...

EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME

An epitaxial silicon wafer cut from a silicon single crystal grown by the Czochralski method, and having a diameter of 300 mm or more. In this epitaxial silicon wafer, the time required to cool every part of the silicon single crystal during the growth from 800° C. down to 600° C. is set to 450 minutes or less, the interstitial oxygen concentration is from 1.5×10to 2.2×10atoms/cm(old ASTM standard), the entire surface of the cut silicon wafer is composed of a COP region, and the BMD density in the bulk of the epitaxial wafer after a heat treatment at 1000° C. for 16 hours is 1×10/cmor less. In this epitaxial silicon wafer, even if the thermal process in a semiconductor device fabrication process is a low temperature thermal process, epitaxial defects do not occur, as well as sufficient gettering capability being obtainable. 1. An epitaxial silicon wafer comprising:a cut silicon wafer, which was cut from a silicon single crystal grown by the Czochralski method, and has a diameter of 300 mm or more, andan epitaxial layer formed on a surface of the cut silicon wafer; whereina time required to cool every part of the silicon single crystal from 800° C. down to 600° C. during the growth is set to 450 minutes or less,{'sup': 18', '18', '3, 'an interstitial oxygen concentration of the cut silicon wafer is from 1.5×10to 2.2×10atoms/cm(old ASTM standard),'}{'sup': 13', '3, 'a nitrogen concentration of the cut silicon wafer is 1×10atoms/cmor less,'}{'sup': 16', '3, 'a carbon concentration of the cut silicon wafer is 1×10atoms/cmor less,'}an entire surface of the cut silicon wafer is composed of a COP region, and{'sup': 4', '2, 'a BMD density in a bulk of the epitaxial silicon wafer is 1×10/cmor less after a heat treatment at 1000° C. for 16 hours.'}2. The epitaxial silicon wafer according to claim 1 ,wherein the epitaxial silicon wafer is heat treated at 1000° C. or less, and then is subjected to a thermal stress test by a flash lamp anneal process at a maximum attainable ...

INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHOD FOR PRODUCING A MONOCRYSTALLINE INDIUM PHOSPHIDE

In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cmcan be obtained, despite having a low average zinc concentration of 5×10cmto 3×10cm, at which a crystal hardening effect does not manifest. 1. An indium phosphide wafer including a monocrystalline indium phosphide containing zinc as an impurity , comprising:a main surface having a circular shape having a diameter of two inches or more,{'sup': 17', '−3', '18', '−3', '−2, 'the single crystal having a mean zinc concentration of 5×10cmor more and less than 1×10cmand a mean dislocation density of 5000 cmor less.'}2. The indium phosphide wafer according to claim 1 , wherein a relative standard deviation of zinc concentrations determined at individual regions is 20% or less when the wafer is divided into several regions on a plane perpendicular to the main surface to measure the zinc concentration for each region and the relative standard deviation is determined as the ratio of standard deviation of the zinc concentrations to the mean value of the zinc concentrations.3. The indium phosphide wafer ...

Method for manufacturing a polycrystalline silicon ingot

A method for manufacturing a polycrystalline silicon ingot includes steps of: a) melting a silicon material in a container disposed in a thermal field to form a molten silicon; b) controlling the thermal field to provide heat to the molten silicon from above the container and to solidify a portion of the molten silicon contacting a base part and at least a portion of a wall part proximate to the base part of the container to form a solid silicon crystalline isolation layer; and c) controlling the thermal field to continuously provide heat to the rest of the molten silicon from above the container and to solidify the rest of the molten silicon gradually from a bottom to a top of the rest of the molten silicon to form a polycrystalline silicon ingot.

SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME

A silicon wafer is manufactured by subjecting a silicon wafer sliced from a silicon single-crystal ingot grown by the Czochralski process to a rapid thermal process in which the silicon wafer is heated to a maximum temperature within a range of 1300 to 1380° C., and kept at the maximum temperature for 5 to 60 seconds; and removing a surface layer of the wafer where a semiconductor device is to be manufactured by a thickness of not less X [μm] which is calculated according to the below equations (1) to (3): 1. A method of manufacturing a silicon wafer comprising:subjecting a silicon wafer sliced from a silicon single-crystal ingot grown by a Czochralski process to a rapid thermal process in which the silicon wafer is heated to a maximum temperature within a range of 1300 to 1380° C., and kept at the maximum temperature for 5 to 60 seconds; and [{'br': None, 'i': X', 'a', 'b, '[μm]=[μm]+[μm]\u2003\u2003(1);'}, {'br': None, 'i': 'a', 'sup': '−0.4', '[μm]=(0.0031×(said maximum temperature)[° C.]−3.1)×6.4×(cooling rate)[° C./second] . . . (2); and'}, {'br': None, 'i': b', 'a, 'sup': 3', '3, '[μm]=/(solid solubility limit of oxygen)[atoms/cm]/(oxygen concentration in substrate)[atoms/cm]\u2003\u2003(3).'}], 'removing a surface layer of the wafer where a semiconductor device is to be manufactured by a thickness of not less X [μm] which is calculated according to below-identified equations (1) to (3)2. The method of claim 1 , wherein during the step of removing the surface layer claim 1 , a side peripheral surface of the silicon wafer is removed by a thickness which is not more than the above-defined value “a”.3. The method of claim 1 , wherein during the step of removing the surface layer claim 1 , a bevel surface of the wafer is removed such that oxygen precipitation nuclei are exposed.4. A silicon wafer manufactured by the method of claim 1 , wherein at least said surface layer is free of crystal-originated particles and oxygen precipitation nuclei claim 1 , and wherein ...

METHOD OF GROWING INGOT AND INGOT

Provided is a method of growing an ingot. The method of growing the ingot includes melting a silicon to prepare a silicon melt solution, preparing a seed crystal having a crystal orientation [110], growing a neck part from the seed crystal, and growing an ingot having the crystal orientation [110] from the neck part. The neck part has a diameter of about 4 mm to about 8 mm. 1. A method of growing an ingot , the method comprising:melting a silicon to prepare a silicon melt solution;preparing a seed crystal having a crystal orientation [110];growing a neck part from the seed crystal; andgrowing an ingot having the crystal orientation [110] from the neck part, wherein the neck part has a diameter of about 4 mm to about 8 mm.2. The method according to claim 1 , wherein the silicon melt solution has a doping concentration of about 8.5×10atoms/cmto about 1.7×10atoms/cm.3. The method according to claim 2 , wherein the silicon melt solution has a boron concentration of about 8.5×10atoms/cmto about 1.7×10atoms/cm.4. The method according to claim 1 , wherein the seed crystal has a doping concentration of about 8.5×10atoms/cmto about 1.7×10atoms/cm.5. The method according to claim 4 , wherein the seed crystal has a boron concentration of 8.5×10atoms/cmto about 1.7×10atoms/cm.6. The method according to claim 1 , wherein the neck part has a length of about 400 mm or more.7. The method according to claim 1 , wherein claim 1 , in the growing of the neck part claim 1 , the neck part has a growth rate of about 3.0 mm/min to about 3.2 mm/min.8. The method according to claim 1 , wherein claim 1 , in the growing of the ingot claim 1 , the ingot has a lifting speed of about 0.9 mm/min or more.9. The method according to claim 1 , wherein claim 1 , in the preparing of the silicon melt solution claim 1 , a magnetic field is applied.10. The method according to claim 9 , wherein the magnetic field is applied into a lower side of a surface of the silicon melt solution.11. The method according ...

VAPOR DEPOSITION DEVICE AND CARRIER USED IN SAME

A vapor deposition device is provided that can make uniform a CVD film thickness at a circumferential edge of a wafer. A carrier is formed in an endless ring shape having a bottom surface that rests on a top surface of a susceptor, a top surface touching and supporting an outer edge of a reverse face of a wafer, an outer circumferential wall surface, and an inner circumferential wall surface, and the carrier is also configured with a structure or shape in a circumferential direction of the top surface that has a correspondence relationship to a crystal orientation in the circumferential direction of the wafer, and a before-treatment wafer is mounted on the carrier such that the crystal orientation in the circumferential direction of the before-treatment wafer and the structure or shape in the circumferential direction have a correspondence relationship. 1. A vapor deposition device which is provided with a ring-shaped carrier that supports an outer edge of a wafer , and which uses a plurality of the carriers to:transport a plurality of before-treatment wafers from a wafer storage container, through a factory interface, load-lock chamber, and wafer transfer chamber, to a reaction chamber in that order, andtransport a plurality of after-treatment wafers from the reaction chamber, through the wafer transfer chamber, load-lock chamber, and factory interface, to the wafer storage container in that order,and in which the load-lock chamber communicates with the factory interface via a first door and also communicates with the wafer transfer chamber via a second door,the wafer transfer chamber communicates, via a gate valve, with the reaction chamber in which a CVD film is formed on the wafer,the wafer transfer chamber is provided with a first robot that deposits a before-treatment wafer transported into the load-lock chamber into the reaction chamber in a state where the before-treatment wafer is mounted on a carrier and also withdraws an after-treatment wafer for which ...

SEEDLESS GROUP IV NANOWIRES, AND METHODS FOR THE PRODUCTION THEREOF

A water dispersible, biocompatible, non-toxic, seedless Group IV nanowire having an etched surface and surface oxide is provided. Also provided is a method of forming water dispersible seedless Group IV nanowires, comprising the steps of providing pristine seedless Group IV nanowires, and reacting the nanowires with a solution of an acidic amino acid to etch the nanowires and promote the formation of a water dispersible oxide layer through the formation of etched nanowires. 1. A water dispersible , biocompatible , non-toxic , seedless Group IV nanowire having an etched surface and a native oxide coating , in which the Group IV element is selected from the group consisting of germanium and silicon.2. The water dispersible claim 1 , biocompatible claim 1 , non-toxic claim 1 , seedless Group IV nanowire as claimed in in which the Group IV element is germanium.3. The water dispersible claim 1 , biocompatible claim 1 , non-toxic claim 1 , seedless Group IV nanowire as claimed in in which the water dispersible native oxide coating has a thickness of from 3-7 nm.4. The water dispersible claim 1 , biocompatible claim 1 , non-toxic claim 1 , seedless Group IV nanowire as claimed in in which the native oxide coating is non-smooth.5. A method of forming water dispersible seedless Group IV nanowires claim 1 , comprising the steps of providing smooth claim 1 , non-etched seedless Group IV nanowires claim 1 , and reacting the nanowires with a solution of an acidic amino acid to etch the nanowires and promote the formation of a water dispersible native oxide coating through the formation of etched nanowires claim 1 , in which the Group IV element is selected from the group consisting of germanium and silicon.6. The method according to claim 5 , in which the smooth claim 5 , non-etched seedless Group IV nanowires are grown by solution decomposition comprising the steps of: heating at least one high boiling point solvent to its reaction temperature in a chamber claim 5 , injecting a ...

METHOD OF PRODUCING SILICON SINGLE CRYSTAL INGOT AND SILICON SINGLE CRYSTAL GROWTH APPARATUS

Provided are a method of producing a high resistance n-type silicon single crystal ingot with small tolerance margin on specific resistance in the crystal growth direction, which is suitably used in a power device, and a silicon single crystal growth apparatus. In a method of producing a silicon single crystal ingot using Sb or As as an n-type dopant with the use of a silicon single crystal growth apparatus using the Czochralski process, a measurement step of measuring the gas concentration of a compound gas containing the n-type dopant as a constituent element; and a pulling condition controlling step of controlling one or more pulling condition values including at least one of a pressure in the chamber, a flow volume of the Ar gas, and a gap between the guide portion and the silicon melt so that the measured gas concentration falls within a target gas concentration range are performed. 1. A method of producing a silicon single crystal ingot using a silicon single crystal growth apparatus having a crucible storing a silicon melt doped with an n-type dopant , a chamber accommodating the crucible , a pressure regulator controlling a pressure in the chamber , a pulling portion pulling up a silicon single crystal ingot from the silicon melt , a gas supply for supplying Ar gas into the chamber , a gas exhaust through which the Ar gas is discharged from the chamber , and a guide portion provided above a surface of the silicon melt for guiding the Ar gas to flow along the surface of the silicon melt , comprising:pulling up the silicon single crystal ingot by the Czochralski process;measuring a gas concentration of a dopant gas containing the n-type dopant as a constituent element while performing the pulling; andcontrolling one or more pulling condition values including at least one of the pressure in the chamber, a flow volume of the Ar gas, and a gap between the guide portion and the silicon melt while performing the pulling so that the measured gas concentration falls ...

SILICON WAFER HORIZONTAL GROWTH APPARATUS AND METHOD

A silicon wafer horizontal growth apparatus comprises a casing forming a cavity; a crucible within the cavity and having a melting zone, an overflow port, a first and a second overflow surface; a feeding assembly for adding raw material to the melting zone at an adjustable rate; a heating assembly comprising two movable heaters disposed on the upper and lower sides of the crucible at an interval; a thermal insulation component for maintaining a temperature in the cavity; a gas flow assembly comprising a jet located above the second overflow surface, a gas conductive graphite member mounted on the bottom of the crucible, a quartz exhaust tube connected with the gas conductive graphite member, and a quartz cooling tube outside the exhaust tube; and a heat insulating baffle located above the second overflow surface for isolating the heating assembly from the jet, dividing the cavity into hot and cold zones. 1. A silicon wafer horizontal growth apparatus , comprising:a casing forming a cavity;a crucible, located in the cavity and having a melting zone, an overflow port, a first overflow surface and a second overflow surface;a feeding assembly for adding silicon raw material to the melting zone at a feeding rate adjustable;a heating assembly comprising two movable heaters, the two movable heaters being disposed on the upper and lower sides of the crucible respectively at a certain interval with the crucible;a thermal insulation component for maintaining a temperature in the cavity;a gas flow assembly comprising a jet, a gas conductive graphite member, a quartz exhaust tube, and a quartz cooling tube, wherein the jet is located above the second overflow surface, the gas conductive graphite member is mounted on the bottom of the crucible, the quartz cooling tube is nested outside the quartz exhaust tube, and the quartz exhaust tube is connected with the gas conductive graphite member; anda heat insulating baffle located above the second overflow surface for isolating the ...

Method for Purifying Silicon

The present invention relates to a method for purifying silicon, comprising at least the following steps: c) providing a container () that comprises silicon () in molten state, the container () having a longitudinal axis (X) and the silicon () in molten state defining a free surface () on the side opposite the bottom () of the container (); d) imposing on the silicon () in molten state conditions that are favourable for the solidification thereof, the mean temporal velocity for the duration of step b) of propagating the solidification front () of the silicon, measured along the longitudinal axis (X) of the container (), being no lower than 5 μm/s, preferably 10 μm/s; said method being characterised in that at least one stirring system () imposes, during all or part of step b), a flow of silicon () in molten state with a Reynolds number comprised between 3 10and 3 10, preferably between 10and 10. 117-. (canceled)18. A process for purifying silicon comprising:providing a container containing molten silicon, the container having a longitudinal axis (X) and the molten silicon defining on the side opposite a bottom of the container a free surface; and{'sup': 4', '6, 'imposing on the molten silicon conditions that promote its solidification with a propagation speed of a solidification front of the silicon higher than or equal to 5 μm/s, time averaged over the duration of solidification and measured along the longitudinal axis, while stirring the molten silicon with at least one stirring system throughout all or part of this step at a flow of molten silicon having a Reynolds number between 3×10and 3×10to obtain purified solid silicon.'}19. The process of claim 18 , wherein the flow of molten silicon is generated by making the stirring system move.20. The process of claim 19 , wherein the movement of the stirring system comprises a rotary movement.21. The process of claim 20 , wherein the rotary movement occurs about an axis (Y) of rotation making claim 20 , with at least ...

PHOSPHOR, METHOD FOR MANUFACTURING SAME, AND LIGHT-EMITTING DEVICE

A flat plate-shaped phosphor member includes a plurality of granular single crystal phosphors, each of which including a YAG crystal as a mother crystal, the YAG crystal having a composition represented by a formula of YGdCeAlO(0.03≦x≦0.2, 0.003≦y≦0.2, −0.2≦w≦0.2). Reduction of fluorescence intensity of the phosphor is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25° C. to 100° C. 1. A flat plate-shaped phosphor member , comprising:{'sub': 3-x-y', 'x', 'y', '5', '12-w, 'a plurality of granular single crystal phosphors, each of which comprising a YAG crystal as a mother crystal, the YAG crystal having a composition represented by a formula of YGdCeAlO(0.03≦x≦0.2, 0.003≦y≦0.2, −0.2≦w≦0.2),'}wherein reduction of fluorescence intensity of the phosphor is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25° C. to 100° C.2. The flat plate-shaped phosphor member claim 1 , according to claim 1 , wherein a quantum efficiency of the phosphor at 25° C. is not less than 92% when the excitation light wavelength is 460 nm.3. A light emitting device claim 1 , comprising:a light emitting element for emitting bluish light; and{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'a flat plate-shaped phosphor member as defined in .'}4. The light emitting device claim 3 , according to claim 3 , wherein the light-emitting element and the flat plate-shaped phosphor member are separately arranged from each other.5. The flat plate-shaped phosphor member claim 1 , according to claim 1 , wherein variation of a full width at half maximum (FWHM) of fluorescence spectrum of the phosphor is not more than 1.5 nm when the excitation light wavelength is varied from 460 nm to 480 nm.6. A light emitting device claim 1 , comprising:a light emitting element for emitting bluish light; and{'claim-ref': {'@idref': 'CLM-00005', 'claim 5'}, 'a flat plate-shaped phosphor member as defined in .'}7. The light emitting ...

Method for growing a silicon single crystal

A method for growing a silicon single crystal includes determining a diameter to give the maximum value of a ratio of an equivalent stress and a critical resolved shear stress in a tail portion on the occasion of the gradual cooling of the silicon single crystal in an after-heating step, in advance; wherein, the tail portion is grown in the tail forming step under a condition that an interstitial oxygen concentration at a position of the determined diameter is 8.8×10 17 atoms/cm 3 (ASTM '79) or more. This method for growing a silicon single crystal by a CZ method can efficiently grow a heavy weight and large-diameter silicon single crystal while suppressing a generation of slip dislocations in the tail portion of the silicon single crystal in the after-heating step to gradually cool the crystal after finishing the tail forming step.

LIQUID DOPING SYSTEMS AND METHODS FOR CONTROLLED DOPING OF A MELT

A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt. 1. A method of growing a doped monocrystalline ingot using a crystal growing system including a growth chamber , a dopant feeding device , and a feed tube , the method comprising:preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber;introducing a solid dopant into the feed tube with the dopant feeding device;melting the solid dopant within the feed tube to a form a liquid dopant;introducing the liquid dopant into the melt below a surface of the melt; andgrowing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.2. The method of claim 1 , wherein the feed tube includes a first end defining an inlet for receiving solid dopant from the dopant feeding device and a second end having a dopant outlet defined therein claim 1 , the method further comprising positioning the dopant outlet below the surface of the melt.3. The method of claim 2 , wherein positioning the dopant outlet below the surface of the melt includes positioning the dopant outlet at a depth of at least about 1 cm below the surface of the melt.4. The method of claim 2 , wherein positioning the dopant outlet below the surface of the melt includes positioning the dopant outlet at a depth of between about 1 cm ...

CRYSTAL GROWING SYSTEMS AND CRUCIBLES FOR ENHANCING HEAT TRANSFER TO A MELT

A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. 1. A system for growing an ingot from a melt , the system comprising:an outer crucible defining an outer cavity for containing the melt;an inner crucible located within the outer cavity, the inner crucible having a central longitudinal axis, the inner crucible including a second sidewall and a second base extending radially inward from the second sidewall and having an opening therein, the opening in the second base, the second crucible, and the outer crucible concentric with the central longitudinal axis; anda first, annular weir separating the outer crucible from the inner crucible, the first weir separate from the inner crucible and the outer crucible.2. The system of claim 1 , wherein the opening has a first diameter claim 1 , the first weir has a second diameter claim 1 , the second sidewall has a third diameter claim 1 , the third diameter being greater than the first and second diameters.3. The system of claim 1 , wherein the opening is defined by an annular rim tapered with respect to the central longitudinal axis claim 1 , the rim being substantially aligned with the first weir.4. The system of claim 1 , wherein the first weir has a plurality of first weir passageways extending therethrough to permit the melt to flow between an outer melt zone and an inner melt zone.5. The system of claim 4 , further comprising a second claim 4 , annular weir positioned radially outward from the first weir and supporting the inner crucible along the second base claim 4 , the second weir having a plurality of second weir passageways extending ...

Method for Manufacturing Semiconductor Devices with Superjunction Structures

A method for forming semiconductor device includes providing a semiconductor substrate having an initial surface oxygen concentration in a surface region of less than 6×10cm, forming an epitaxial layer on a first side of the semiconductor substrate, and implanting dopants into the epitaxial layer. An optional thermal anneal is carried out prior to forming the epitaxial layer and/or a thermal treatment is carried out after implanting dopants. 1. A method for manufacturing semiconductor devices , the method comprising:{'sup': 17', '−3, 'providing a semiconductor substrate having a surface region at a first side of the semiconductor substrate, the surface region having an initial surface oxygen concentration of less than 6×10cm;'}forming an epitaxial layer on the first side of the semiconductor substrate; andforming a plurality of superjunction semiconductor device structures in the epitaxial layer.2. The method of claim 1 , further comprising:subjecting the semiconductor substrate to a thermal oxidation anneal.3. The method of claim 1 , wherein the semiconductor substrate has an initial oxygen bulk concentration of at least 6×10cm claim 1 , the method further comprising:{'sup': 17', '−3, 'prior to forming the epitaxial layer, subjecting the semiconductor substrate to a thermal oxygen-out-diffusion anneal in an ambient containing one or more of oxygen, argon, hydrogen and nitrogen at a temperature sufficient to reduce the oxygen concentration at least in the surface region of the semiconductor substrate, to reduce the mean oxygen concentration below 6×10cmin the surface region,'}wherein the surface region extends from the first side to a depth in the semiconductor substrate of at least 10 μm.4. The method of claim 3 , wherein the thermal oxygen-out-diffusion anneal reduces the mean oxygen concentration below 5×10cmin the surface region.5. The method of claim 3 , wherein the surface region extends from the first side to a depth in the semiconductor substrate of at least ...

Semiconductor Material Having a Compositionally-Graded Transition Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 115-. (canceled)16. A semiconductor material , comprising:a compositionally-graded transition layer having a back surface and a top surface, the compositionally-graded transition layer comprising a gallium nitride alloy, wherein a gallium concentration in the compositionally-graded transition layer increases from the back surface to the front surface;an intermediate layer formed under the compositionally-graded transition layer; and{'sup': '2', 'a gallium nitride material layer formed over the compositionally-graded transition layer, the gallium nitride material layer having a crack level of less than 0.005 μm/μm.'}17. The semiconductor material of claim 16 , wherein the composition of the compositionally-graded transition layer is graded continuously across the thickness of the transition layer.18. The semiconductor material of claim 16 , wherein the composition of the compositionally-graded transition layer is graded discontinuously across the thickness of the transition layer.19. The semiconductor material of claim 16 , wherein the compositionally-graded transition layer comprises an alloy of gallium nitride selected from ...

SILICON WAFER AND MANUFACTURING METHOD THEREOF

A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process. 1. A method of manufacturing a silicon epitaxial wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature ranges from 1050° C. to the melting point of silicon and of which the temperature rising and falling rate ranges from 150° C./sec to 10000° C./sec , the method comprising:{'sup': 17', '17', '3, 'an epitaxial process of causing an epitaxial layer to grow on the surface of a substrate, which is doped with boron so as to have resistivity of 0.02 Ωcm to 1 kΩcm and of which the initial oxygen concentration Oi is in the range of 14.0×10to 22×10atoms/cm(Old-ASTM; ASTM F 121, 1970-1979 published by American Society for Testing and Materials International); and'}an oxygen precipitation nuclei dissolution process of treating a wafer in the treatment temperature range of 1150° C. to 1300° C., the retention time range of 5 sec to 1 min, and the temperature-falling rate range of 10° C./sec to 0.1° C./sec,wherein the oxygen precipitation nuclei dissolution process is performed before or after the epitaxial process,the thermal treatment process is applied to only an outermost surface layer of the silicon epitaxial wafer, and{'sup': 4', '2, 'the oxygen precipitates density is equal to or less than 5×10pcs/cmin the silicon epitaxial wafer.'}2. A method of manufacturing a silicon epitaxial wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature ranges from 1050° C. to the melting point of silicon and of which the temperature ...

AUXILIARY HEATING DEVICE FOR ZONE MELTING FURNACE AND HEAT PRESERVATION METHOD FOR SINGLE CRYSTAL ROD THEREOF

The present invention aims at providing an auxiliary heating device for a zone melting furnace and a heat preservation method for a single crystal rod thereof. The auxiliary heating device comprises an auxiliary heater disposed below a high-frequency heating coil inside the zone melting furnace and is formed by winding a hollow metal circular pipe. The winding start end of the auxiliary heater is positioned on the upper part, the winding stop end of the auxiliary heating device is positioned on the lower part, and an upper end part and a lower end part are respectively guided out from the both ends; and a hollow cylindrical heating load is disposed on the inner side of the auxiliary heater, and an insulation part is disposed between the heating load and the auxiliary heater. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.5 inches. 1. An auxiliary heating device for a zone melting furnace , comprising an auxiliary heater disposed below a primary heating coil in the zone melting furnace , and characterized in that said auxiliary heater is formed by winding a hollow metal circular pipe according to a spiral line type; the winding start end of the auxiliary heater is positioned on the upper part , the winding stop end thereof is positioned on the lower part , and an upper end part and a lower end part are horizontally guided out from the both ends respectively; a hollow cylindrical heating load which is axially symmetrical is disposed on the inner side of the auxiliary heater , and a hollow cylindrical insulation part is disposed between the heating load and the auxiliary heater; andthe said device also comprises hollow tubular electrodes each of which one end is provided with a water inlet and the other end is connected with the upper end part and the lower end part of the auxiliary heater ...

Semiconductor Wafer Composed Of Monocrystalline Silicon And Method For Producing It

The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period. 1. A monocrystalline silicon semiconductor wafer having a nitrogen concentration of not more than 1×10atoms/cm , and when subjected to defect delineation/optical microscopy comprises:{'sup': 10', '3, 'a denuded zone (“DZ”) which extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer and which is free of BMD defects and has an averaged thickness of not less than 5 μm, and a region which adjoins the DZ and extends further into the bulk of the semiconductor wafer, the region having BMD defects having a size of not less than 50 nm, wherein a depth profile of the BMD defects in the region has a local maximum which is at a distance of not less than 20 μm and not more than 200 μm from the front side of the semiconductor wafer, and wherein the density of the BMD defects at the local maximum is not less than 2×10/cm.'}2. The wafer of claim 1 , wherein the interstitial oxygen concentration is ≧5.2·10atoms/cmand ≦6.0·10atoms/cm.3. The wafer of claim 1 , which has a COP-containing region extending from the center of the wafer in a direction towards the edge of the wafer which has an average density of COP defects having a size of >20 nm of <2.5·10cm.4. The wafer of claim 1 , having an COP-containing ...

METHOD FOR REFINING ARGON GAS AND RECOVERING AND REFINING APPARATUS FOR ARGON GAS

A method is provided for refining an argon gas, in which oxygen is added to the argon gas containing hydrogen, carbon monoxide(CO), and oxygen as impurities so that the hydrogen and the CO are converted into water and carbon dioxide in a catalyst tower, or hydrogen is added to the argon gas so that the oxygen is converted into the water; the method including: monitoring the hydrogen, the CO, and the oxygen on an outlet side of the catalyst tower; and at least one of adding the oxygen to the argon gas when any one of the hydrogen and the CO is detected on the outlet side of the catalyst tower, and adding the hydrogen when the oxygen is detected, wherein the oxygen or the hydrogen to be added is intermittently added to the catalyst tower relative to continuous supply of the argon gas to the catalyst tower. 110-. (canceled)11. A method for refining an argon gas , in which oxygen is added to the argon gas containing at least one of hydrogen , carbon monoxide , and oxygen as impurities so that the hydrogen and the carbon monoxide contained in the argon gas are converted into water and carbon dioxide by using a catalytic reaction in a catalyst tower , or hydrogen is added to the argon gas so that the oxygen contained in the argon gas is converted into the water by using a catalyst reaction in the catalyst tower , and at least one of the hydrogen , the carbon monoxide , and the oxygen is thereby removed from the argon gas ,the method comprising the steps of:monitoring at least one of the hydrogen, the carbon monoxide, and the oxygen on an outlet side of the catalyst tower; andat least one of adding the oxygen to the argon gas on an inlet side of the catalyst tower when any one of the hydrogen and the carbon monoxide is detected on the outlet side of the catalyst tower, and adding the hydrogen to the argon gas on the inlet side of the catalyst tower when the oxygen is detected on the outlet side of the catalyst tower,wherein the oxygen or the hydrogen to be added is ...

SINGLE CRYSTAL PULLING APPARATUS

A single crystal pulling apparatus including a dopant supplying means which includes: a charging device provided outside a chamber for storing a dopant and charging the dopant into the chamber; a sublimation room provided inside the chamber for holding and sublimating the dopant charged from the charging device; a carrier gas-introducing device for introducing a carrier gas into the sublimation room; and a blowing device for blowing the dopant sublimated in the sublimation room together with the carrier gas onto a surface of a raw-material melt. The blowing device includes a tube connected to the sublimation room and blowing ports such that the sublimated dopant is scattered from the blowing ports via the tube and blown onto the surface of the raw-material melt. This provides a single crystal pulling apparatus capable of efficient doping with a sublimable dopant within the shortest possible time. 17.-. (canceled)8. A single crystal pulling apparatus comprising:a heater for heating a raw material in a crucible to thereby form a raw-material melt;a chamber for housing the heater and the crucible; anda dopant supplying means for supplying a sublimable dopant to the raw-material melt, and pulling a silicon single crystal from the raw-material melt according to a Czochralski method, wherein a charging device provided outside the chamber and configured to store the dopant and charge the dopant into the chamber;', 'a sublimation room provided inside the chamber and configured to hold and sublimate the dopant charged from the charging device;', 'a carrier gas-introducing device configured to introduce a carrier gas into the sublimation room; and', 'a blowing device configured to blow the dopant sublimated in the sublimation room together with the carrier gas from the carrier gas-introducing device onto a surface of the raw-material melt, and, 'the dopant supplying means comprisesthe blowing device comprises a tube connected to the sublimation room and a plurality of blowing ...

METHODS AND APPARATI FOR MAKING THIN SEMI-CONDUCTOR WAFERS WITH LOCALLY CONTROLLED REGIONS THAT ARE RELATIVELY THICKER THAN OTHER REGIONS AND SUCH WAFERS

Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180-250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6×10atoms/cc, preferably less than 2×10, total oxygen less than 8.75×10atoms/cc, preferably less than 5.25×10. Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities. 1. A semi-conductor wafer comprising:a. a first surface; andb. a second surface;c. a first region with a first average thickness in a direction orthogonal to the first surface; andd. a second region with a second average thickness that is thicker than the first average thickness and that is in a controlled location.23-. (canceled)4. The wafer of claim 1 , the ratio of second average thickness to the first average thickness being between 1.28 to 1 and 5 to 1.5. The wafer of claim 1 , the wafer comprising an interstitial oxygen content of less than 6×10atoms/cc and a total oxygen content of less than 8.75×10atoms/cc.6. The wafer of claim 1 , the first average thickness being less than 160 microns and the second average thickness being at least 180 microns.710-. (canceled)11. The wafer of claim 1 , the second region being selected from the group consisting of at least one of: a perimeter; a border claim 1 , an internal stripe; a landing; and an island.12. The wafer of claim 1 , the second ...

METHOD FOR PRODUCING SILICON-INGOTS

Method for producing silicon-ingots () including the following steps: providing a silicon melt (), growing a block () of silicon from the silicon melt (), the block () having a predetermined crystal orientation, cutting the block () along at least one cutting plane () into a number of silicon-ingots (). 1. A silicon block comprising:a length of at least 400 mm measured in a growth direction; and{'sup': 16', '3', '15', '3, 'a cross sectional area of at least 320 mm×320 mm, wherein silicon of the block has an interstitial oxygen content of less than 5×10atoms per cm, wherein the silicon of the block has a nitrogen content of less than 1×10atoms per cm.'}2. A silicon block according to claim 1 , wherein the growth direction is parallel to one of the following directions: <100> claim 1 , <110> and <111>.3. A silicon block according to claim 1 , wherein side faces of the block have normals which are oriented parallel to one of the following directions: <100> claim 1 , <110> and <111>.4. A silicon block according to claim 1 , wherein said length measured in said growth direction is an integer multiple of 156 mm.5. A silicon block according to claim 1 , wherein said block displays a monocrystalline structure in at least 50% of its volume.6. A silicon block according to claim 1 , wherein said block has a constant density of dislocations along its entire growth direction.7. A silicon block according to claim 6 , wherein said dislocation density is less than 10cm.8. A silicon block according to claim 1 , wherein the block has a rectangular cross section.9. A silicon block according to claim 8 , wherein a side length of said cross section is an integer multiple of 156 mm.10. A silicon block according to claim 9 , wherein another side length of said cross section is around 500 mm.11. A silicon block comprising:{'sup': 16', '3', '15', '3, 'a block structure comprising silicon, a length of at least 400 mm measured in a grow direction and a cross sectional area of at least 320 mm× ...