Resistor array radiation characteristic low-temperature background test method

A resistance array radiation characteristic low-temperature background test method is applied to a resistance array radiation characteristic test device, and the test device can image an intermediate image of an image space cold diaphragm on an object space cold diaphragm, so that the image space cold diaphragm really plays a role in shielding environmental heat radiation between a resistance array and an infrared detector. And thermal noise caused by the fact that heat dissipation radiation is sensitive by an infrared detector is avoided. Because the object space cold diaphragm shields the thermal radiation light beam generated by the hot part outside the image space cold diaphragm, the thermal radiation light beam can be prevented from being reflected by the surface of the resistor array, and a non-uniform cold reflection image is formed on the infrared detector. According to the test method, the negative influence of thermal noise, cold reversion and equivalent black body radiation temperature ...

Vacuum deposition film and film heat treating plant having applied magnetic field

The invention relates to a vacuum deposition film and a film heat treatment device which are provided with an external magnetic field, comprising a sample chamber and a spherical inlet chamber at one end of the sample chamber, and an inlet is arranged in the spherical inlet chamber; the other end of the sample chamber is communicated with a vacuum unit through a sealing mechanism, and a vacuum gauge is arranged in the sample chamber; a sealing rubber ring is arranged between the pressure wire of the sealing mechanism and a seal joint, and the pressure wire and the seal joint are spirally fixed at the other port of the vacuum chamber, and the port is communicated with the vacuum unit through the sealing mechanism, and a wire is lead out from a heater to connect with a temperature control power supply; a water inlet and a water outlet are arranged at the side frame of the seal joint; a heater frame is fixed at the seal joint; an infrared radiation thermometer is arranged outside the vacuum ...

Multifunctional small film deposition equipment

The invention provides a multifunctional small-sized film deposition device. The film deposition device comprises a chemical vapor deposition device, a sputtering deposition device and a pulsed laser deposition device, wherein the chemical vapor deposition device utilizes gaseous matter to carry out chemical reaction on the surface of a substrate so as to form solid deposits; the sputtering deposition device bombards a target material with an ion beam, which ensures that a surface component is sputtered out in a radical or ionic form, deposited on the surface of the substrate and subjected to a film forming process, so as to form a film finally; and the pulsed laser deposition device focuses high-intensity laser and then bombards the target material with the laser, which produces local instantaneous high temperature on a bombarded position, so as to evaporate and deposit the material on the substrate. The whole set of the film deposition device is low in cost, can conveniently transform ...

Pulsed laser energy detector, and manufacturing method and application thereof

The invention provides a pulsed laser energy detector, a producing method and an application thereof. The pulsed laser energy detector mainly comprises an optical sensor; the optical sensor comprises two electrodes, two output ends and an optical sensor chip which is made from a ZnO/Si heterojunction material, wherein the optical sensor chip consists of a ZnO film layer and a Si substrate; the two electrodes are respectively positioned on the ZnO film layer and the Si substrate; and the two output ends are respectively connected with the two electrodes. The pulsed laser energy detector is mainly made from the ZnO/Si heterojunction material, belongs to the photoproduction volt-type detector and directly produces a double peak-shaped voltage signal after being radiated by the single-pulse laser; the time difference corresponding to the two peak points has an obvious functional relation with the energy of the incident laser. Therefore, the electronic measuring device is easily produced, and ...

Deposition film making system of pulse laser with controllable magnetic field

Photodetector

The invention provides a photodetector. The photodetector comprises: an optical sensor, a first electrode and a second electrode which are connected with the optical sensor, and a first electrode leader and a second electrode leader. One end of the first electrode leader and one end of the second electrode leader are separately connected with the first electrode and the second electrode, and the other ends are as outputs. The optical sensor is produced by metal or alloy materials. The photodetector of the invention can rapidly respond to laser pulse with fs pulse width in ultraviolet or infrared band. The width of generated voltage pulse can be less than 0.5 nanosecond and pulse full width is only several nanoseconds.

Substrate angle adjusting device used for impulse laser deposition system

Optical measurement device and method for physical modulus of rock sample

The invention provides an optical measurement device and method for the physical modulus of a rock sample. The device comprises a high-temperature and high-pressure bin, a pressure control system, a heating control system, a first fiber grating sensor and a fiber grating spectrum demodulation instrument, wherein an acoustic wave vibration source and a rock sample clamping device are arranged in the high-temperature and high-pressure bin; the rock sample clamping device is clamped with the rock sample; the pressure control system is used for pressurizing the high-temperature and high-pressure bin to a preset pressure; the heating control system is used for heating the high-temperature and high-pressure bin to a preset temperature; the first fiber grating sensor is positioned in the high-temperature and high-pressure bin and is adhered to the rock sample; the fiber grating spectrum demodulation instrument is positioned out of the high-temperature and high-pressure bin, is connected with the ...

Wide band light position detector

The invention relates to a broad band light position detector, which comprises a substrate; a photoresponse layer growing on the substrate and being a ZnO thin layer; a first electrode and a second electrode respectively arranged at the left end and the right end of the photoresponse layer, and respectively connected with a first electrode lead and a second electrode lead; a first resistor connected between the first electrode lead and the second electrode lead; a third electrode and a forth electrode respectively arranged at the upper end and the lower end of the photoresponse layer, and respectively connected with the third electrode lead and the forth electrode lead; a second resistor connected between the third electrode lead and the forth electrode lead; and a line between the first electrode and the second electrode is perpendicular to a line between the third electrode and the forth electrode. The broad band light position detector has the advantages of broad spectral response, simple ...

Infrared laser sensitive fast response angular position detector

The invention relates to an infrared laser sensitive fast response angular position detector, comprising a substrate and a photoresponsive layer growing on the substrate; wherein, the photoresponsive layer is a ZnO thin film layer added with doped metals, with the thickness from 10 nanometers to 10mum, and the doped metals are doped into ZnO in the form of nano particles. The detector responds quickly when outputting photosensitive signals and takes short time, namely several nanoseconds; the extremum of photovoltage signals is clear and distinguishable along with the change of the angular position, which can be used for measuring the angular position and angular displacement of continuous light or pulsed light. The infrared laser sensitive fast response angular position detector providedby the invention and manufactured by the ZnO thin film layer doped with metal nano particles has wide application prospect in the aspects of industry, computer and national defense, etc.

Static pressure-sintering method for preparing boron target

The boron target preparing statically pressurizing and sintering process includes the following steps: pressurizing boron powder of 99-99.9999 % purity in mold at 800-1200 kg/sq cm pressure in a hydraulic press for 1-100 hr to form firm cake; setting the cake inside quartz tube, pumping to 1E(-4) to 1E(-5) Pa, filling with inert gas of 99.9-99.999 % purity and sintering to seal the quartz tube; heating the sealed quartz tube at 1150-1250 deg.c in the heating furnace for 5-10 hr and lowering the temperature in the rate of 5-10 deg.c/ min to room temperature. The present invention can prepare large, flat, compact boron target with diameter up to 300 mm, and the boron target is used in preparing superconductive MgB2 film with conversion temperature up to 39 K and critical current density up to 12 MA/sq cm.

Process for preparing boron-doped n-shape high-hardness transparent conductive zinc oxide film

Detector for detecting wave length at infrared to far infrared light and preparing method

Infrared detector

The invention provides an infrared optical detector. The infrared optical detector comprises an optical sensor and a detector shell; the optical sensor further comprises an optical sensor chip made of lithium niobate-structure oxide monocrystallines, two electrodes and two output terminals, wherein, the two electrodes are positioned on one side of the optical sensor and respectively connected with the two output terminals; and the detector shell receives the optical sensor and exposes the two output terminals of the optical sensor. The infrared optical detector is made of the lithium niobate-structure oxide monocrystallines, thereby having the advantages of rapid response and high sensitivity.

Deposition film making system of pulse laser with added electric field

Substrate angle adjusting device used for impulse laser deposition system

Infrared laser sensitive fast response angular position detector

The invention relates to an infrared laser sensitive fast response angular position detector, comprising a substrate and a photoresponsive layer growing on the substrate; wherein, the photoresponsive layer is a ZnO thin film layer added with doped metals, with the thickness from 10 nanometers to 10mum, and the doped metals are doped into ZnO in the form of nano particles. The detector responds quickly when outputting photosensitive signals and takes short time, namely several nanoseconds; the extremum of photovoltage signals is clear and distinguishable along with the change of the angular position, which can be used for measuring the angular position and angular displacement of continuous light or pulsed light. The infrared laser sensitive fast response angular position detector provided by the invention and manufactured by the ZnO thin film layer doped with metal nano particles has wide application prospect in the aspects of industry, computer and national defense, etc.

Ultraviolet light detector of sunlight bind and its preparing method

Medium-infrared-to-far-infrared detector

The invention relates to a middle infrared to far infrared light detector. The middle infrared to far infrared light detector comprises an optical sensor, wherein, the optical sensor is provided with an optical sensor chip made from doped strontium titanate monocrystal, The provided middle infrared to far infrared light detector can obtain direct photovoltaic signals of more than 7 millivolt under irradiation of 3-100mum light, can detect various parameters such as optical energy, optical power, optical pulse waveforms and the like, and has wide application to the aspects such as military, national defense, scientific research, production, life and the like.

Method for producing voltage-bearing aluminum alloy tank body of ultra-high voltage switch by V-process

The invention discloses a method for producing a voltage-bearing aluminum alloy tank body of an ultra-high voltage switch by a V-process, comprising the following steps: model making, thin film heating, thin film shaping (film absorbing), coating spraying, sandbox placing, ram-jolting by adding sand , back film covering, film loosening, core setting, box folding, pouring, removing box and shaking out. After the process is improved, an intermediate frequency furnace is utilized to melt and a crucible heat preserving furnace is utilized to modify and refine. When melting in the intermediate frequency furnace, microelements such as tombarthite and the like are replenished and a new non-stirring melting and refining technology is adopted so as to reduce oxide inclusion content in alloy liquid. Modification and refining treatment in the crucible heat preserving furnace ensures high purity degree and high component precision of aluminum liquid, and using pure aluminum alloy liquid can increase ...

Light detector based on ZnO/MgB heterojunction

Ultraviolet detector

The invention provides an ultraviolet detector, at least comprising a light sensor which at least comprises a silicon dioxide light sensor chip, two electrodes and two output terminals, wherein, the two electrodes are arranged at one side of the silicon dioxide light sensor chip; two output terminals are respectively connected with the two electrodes; the ultraviolet detector also comprises a shell in which the light sensor is arranged. The ultraviolet detector of the invention is made of normal material silicon dioxide and has fast response speed and simple structure.

Ultraviolet detector

The invention provides an ultraviolet detector, at least comprising a light sensor which at least comprises a silicon dioxide light sensor chip, two electrodes and two output terminals, wherein, the two electrodes are arranged at one side of the silicon dioxide light sensor chip; two output terminals are respectively connected with the two electrodes; the ultraviolet detector also comprises a shell in which the light sensor is arranged. The ultraviolet detector of the invention is made of normal material silicon dioxide and has fast response speed and simple structure.

Photodetector

The invention provides a light detector, comprising a light sensor, a first electrode and a second electrode which are connected with the light sensor, and a first electrode lead and a second electrode lead; the ends of the first electrode lead and the second electrode lead are respectively connected with the first electrode and the second electrode and the other ends thereof are used as output terminals; light response material of the light sensor is strontium lanthanum aluminate single wafer, strontium lanthanum aluminate mono-crystalline film or strontium lanthanum aluminate polycrystalline film; the mono-crystalline film or the polycrystalline film is prepared on a substrate. The light detector of the invention can quickly respond to a laser pulse of ns pulse width under the ultraviolet band, with the width of generated voltage pulse of less than 2 ns and full width of pulse of only a plurality of ns.

Remote control door bell

The utility model relates to a remote control door bell with the advantages of convenient installation and debugging, high resolution, the avoidance of mutual interference, little possibility of being influenced by the starting of household appliances and the avoidance of losing functions for power failure. The utility model is characterized in that an emitter is connected with an encoding circuit, a capacitor and an emitting circuit in parallel by a power supply, and a resistor is connected between the encoding circuit and the emitting circuit; a receiver is connected with a receiving circuit, a decoding circuit, a music circuit and a door bell in parallel by batteries; all circuits adopt integrated circuits, the music circuit is connected with two triodes in series, and a receiving power supply uses AC as well as DC. The utility model is suitable for being collectively installed in apartments and real estate development companies.

Preparation system and method of reservoir core sample

The embodiment of the invention provides a preparation system and method of a reservoir core sample. The preparation system comprises a core clamping device, a pump body, a weighing device, intermediate containers, a gas bottle, a pressure returning device and a controller, wherein the core clamping device is provided with a liquid charge end, a liquid discharge end and an inner cavity for accommodating a core sample; the pump body is connected with the liquid charging end of the core clamping device, and is used for pumping a liquid into the core clamping device and recording liquid charging parameters; the weighing device is positioned at the liquid discharging end of the core clamping device, and is used for weighing liquid discharging parameters; the intermediate containers are connected with and positioned between the pump body and the core clamping device, and is used for storing a liquid entering the liquid charging end; the gas bottle is connected with and positioned between the ...

Ultraviolet detector

The invention provides an ultraviolet detector, which comprises a beveled substrate, a LaxCa1-xMnO3 thin film, a first metal film electrode, a second metal film electrode, a third metal film electrode, a first electrode lead, a second electrode lead and a third electrode lead, wherein the LaxCa1-xMnO3 thin film is grown on one surface of the beveled substrate; the first and second metal film electrodes are grown at the two ends of the LaxCa1-xMnO3 thin film respectively; the third metal film electrode is positioned between the first and second metal film electrodes, and is grown on the LaxCa1-xMnO3 thin film; the input ends of the first, second and third electrode leads are connected to the first, second and third metal film electrodes, and the output ends of the first, second and third electrode leads are connected to voltage testing equipment respectively; the output ends of the first and second electrode leads are connected to the cathode of the voltage testing equipment; and the output ...

Method for producing voltage-bearing aluminum alloy tank body of ultra-high voltage switch by V-process

The invention discloses a method for producing a voltage-bearing aluminum alloy tank body of an ultra-high voltage switch by a V-process, comprising the following steps: model making, thin film heating, thin film shaping (film absorbing), coating spraying, sandbox placing, ram-jolting by adding sand , back film covering, film loosening, core setting, box folding, pouring, removing box and shakingout. After the process is improved, an intermediate frequency furnace is utilized to melt and a crucible heat preserving furnace is utilized to modify and refine. When melting in the intermediate frequency furnace, microelements such as tombarthite and the like are replenished and a new non-stirring melting and refining technology is adopted so as to reduce oxide inclusion content in alloy liquid. Modification and refining treatment in the crucible heat preserving furnace ensures high purity degree and high component precision of aluminum liquid, and using pure aluminum alloy liquid can increase ...

Rapid response infrared detector and method for making same

The invention provides a fast response infrared detector and a preparation method thereof. The infrared detector comprises a light response layer, a first electrode, a second electrode, a first electrode lead and a second electrode lead, wherein, the light response layer is an Al2O3 mono-crystalline or Al2O3 film with the thickness of 1nm to 10mm; the first electrode and the second electrode are arranged on the light response layer with the thickness of 1nm to 10 mm; ends of the first electrode lead and the second electrode lead are respectively connected with the first electrode and the second electrode and the other ends thereof are connected with an amplification circuit or voltage testing equipment; furthermore, a resistor is fixedly connected between the two electrode leads in parallel. The infrared detector of the invention has simple structure and high response speed, and can obtain photovoltaic signals under the radiation of infrared, with the response speed of ns level.

ZnO/mgB heterojunction material and preparing method thereof

Photodetector

The invention provides a light detector, comprising a light sensor, a first electrode and a second electrode which are connected with the light sensor, and a first electrode lead and a second electrode lead; the ends of the first electrode lead and the second electrode lead are respectively connected with the first electrode and the second electrode and the other ends thereof are used as output terminals; light response material of the light sensor is strontium lanthanum aluminate single wafer, strontium lanthanum aluminate mono-crystalline film or strontium lanthanum aluminate polycrystalline film; the mono-crystalline film or the polycrystalline film is prepared on a substrate. The light detector of the invention can quickly respond to a laser pulse of ns pulse width under the ultraviolet band, with the width of generated voltage pulse of less than 2 ns and full width of pulse of only a plurality of ns.

Infrared detector

The invention provides an infrared optical detector. The infrared optical detector comprises an optical sensor and a detector shell; the optical sensor further comprises an optical sensor chip made of lithium niobate-structure oxide monocrystallines, two electrodes and two output terminals, wherein, the two electrodes are positioned on one side of the optical sensor and respectively connected with the two output terminals; and the detector shell receives the optical sensor and exposes the two output terminals of the optical sensor. The infrared optical detector is made of the lithium niobate-structure oxide monocrystallines, thereby having the advantages of rapid response and high sensitivity.

Method for preparing YBCO high temperature superconducting film on non-texture metal baseband

The invention discloses a method for making a YBCO high-heating superconducting film in a metal base band without weaving structure, provided with: making a YBCO breaker with weaving structure in said metal base band, and then molding the breaker to epitaxial prepare an oxidize breaker and a high-heating superconducting film; while making the YBCO breaker with weaving structure, adding a foreign magnetic field apparel to the chip direction, according to the principle that YBCO crystal particles with aeolotropy paramagnetic susceptibility grow along the c axes appareled to the magnetic field with the help of the magnetic field, in such a way, YBCO growing with weaving structure perpendicular to the chip; molding the film to epitaxial prepare YSZ and CeO2 breakers, then preparing a YBCO superconducting film. The invention provides a method for making an epitaxial YBCO film in a metal base band without weaving structure.

Method for probing pulsed laser energy by pulse laser energy detector

The invention provides a pulsed laser energy detector, a producing method and an application thereof. The pulsed laser energy detector mainly comprises an optical sensor; the optical sensor comprises two electrodes, two output ends and an optical sensor chip which is made from a ZnO/Si heterojunction material, wherein the optical sensor chip consists of a ZnO film layer and a Si substrate; the two electrodes are respectively positioned on the ZnO film layer and the Si substrate; and the two output ends are respectively connected with the two electrodes. The pulsed laser energy detector is mainly made from the ZnO/Si heterojunction material, belongs to the photoproduction volt-type detector and directly produces a double peak-shaped voltage signal after being radiated by the single-pulse laser; the time difference corresponding to the two peak points has an obvious functional relation with the energy of the incident laser. Therefore, the electronic measuring device is easily produced, and ...

Rapid response infrared detector and method for making same

The invention provides a fast response infrared detector and a preparation method thereof. The infrared detector comprises a light response layer, a first electrode, a second electrode, a first electrode lead and a second electrode lead, wherein, the light response layer is an Al2O3 mono-crystalline or Al2O3 film with the thickness of 1nm to 10mm; the first electrode and the second electrode are arranged on the light response layer with the thickness of 1nm to 10 mm; ends of the first electrode lead and the second electrode lead are respectively connected with the first electrode and the second electrode and the other ends thereof are connected with an amplification circuit or voltage testing equipment; furthermore, a resistor is fixedly connected between the two electrode leads in parallel. The infrared detector of the invention has simple structure and high response speed, and can obtain photovoltaic signals under the radiation of infrared, with the response speed of ns level.

Vacuum deposition film and film heat treating plant having applied magnetic field