Super-fast wide-wave-band optical detector made by doped oxide and silicon heterojunction material

Vacuum deposition film and film heat treating plant having applied magnetic field

The invention relates to a vacuum deposition film and a film heat treatment device which are provided with an external magnetic field, comprising a sample chamber and a spherical inlet chamber at one end of the sample chamber, and an inlet is arranged in the spherical inlet chamber; the other end of the sample chamber is communicated with a vacuum unit through a sealing mechanism, and a vacuum gauge is arranged in the sample chamber; a sealing rubber ring is arranged between the pressure wire of the sealing mechanism and a seal joint, and the pressure wire and the seal joint are spirally fixed at the other port of the vacuum chamber, and the port is communicated with the vacuum unit through the sealing mechanism, and a wire is lead out from a heater to connect with a temperature control power supply; a water inlet and a water outlet are arranged at the side frame of the seal joint; a heater frame is fixed at the seal joint; an infrared radiation thermometer is arranged outside the vacuum ...

Deposition film making system of pulse laser with controllable magnetic field

Method and apparatus for no-mark detection of biochip

The invention provides a method for detecting a biological chip without using any labeling reagent, which comprises the steps of enabling polarized light including a P polarized light component and an S polarized light component to be irradiated on the biological chip to be detected and transmitted, receiving the transmitted polarized light and detecting and characterizing the characteristics of the biological chip to be detected according to the P polarized light component and the S polarized light component of the received transmitted polarized light. The invention can detect the differencefrom the relative change of a P polarized light transmission coefficient and an S polarized light transmission coefficient and obtain more internal information and structural characteristics on biological macromolecules according to the penetration of P polarized light and S polarized light into biological samples. The device adopted by the invention has simple structure, is easy to operate, can realize ...

Substrate heater for laser molecular beam epitaxial device

Device for no-mark monitoring micro-array biomolecule reaction

The invention provides a device for non-mark monitoring of microorganism array biomolecular reaction, comprising an incident light path, a sample table, an emergent light path and a data acquisition and processing system, wherein, the incident light path comprises a laser, a polarizer, a photoelastic modulator, a phase shifter and a beam expander arranged between the phase shifter and the sample table; the emergent light path comprises a polarization analyzer and an electrooptical signal converter; the electrooptical signal converter comprises a CCD area array, a pulse switching circuit, a first phase-locked amplifier and a second phase-locked amplifier; the output end of the CCD area array is respectively in electric connection with the input ends of the pulse switching circuit, the first phase-locked amplifier and the second phase-locked amplifier. With a simple structure and easy operation, the device reduces the noise caused by moving a sample and greatly improves signal-noise ratio ...

Unmarked high throughput detecting device of biological chip by using light reflection differential method

The invention provides an unmarked high throughput detecting device of a biological chip by using a light reflection differential method. The device comprises an incident light path and a reflective light detecting light path consisting of a small hole part, a photoelectric detector, a first phase-locking amplifier, a second phase-locking amplifier and a computer system and also comprises a firstgrid ruler mounted on an x-axis scanning platform and a second grid ruler mounted on a y-axis scanning platform, wherein the x-axis scanning platform and the y-axis scanning platform are mounted on athree-dimensional adjusting frame and respectively connected with the first grid ruler and the second grid ruler; and the first grid ruler and the second grid ruler are electrically connected with the computer system respectively. A signal provided by using a precise grid ruler is strictly consistent with the displacement of the scanning platform; and two-dimensional fast scanning of the biological chip ...

Quick response broadband optical detector

Substrate angle adjusting device used for impulse laser deposition system

Photoelectric position detector with high-sensitivity

The invention provides a photoelectric position detector with high sensitivity. The detector comprises a Si substrate and two electrodes. TiN film is epitaxially grown on the Si substrate by a film making method; the electrodes are respectively prepared on both sides of the Si substrate by a film coating method or a welding method. When a light spot illuminates the surface of the detector, a voltmeter is used for measuring a voltage between the electrodes; or a voltage source is connected between the electrodes and the TiN to cause a schottky diode composed of the TiN and the Si to work under a reverse bias condition, and then the current between the electrodes is measured; therefore, the position of the light spot can be determined according to the measured voltage or the current. The photoelectric position detector has the advantages of simple structure, good linearity and high sensitivity, can directly detect the voltage or the current without an additional amplifying circuit, and can ...

Synaptic three-terminal device based on ferroelectric domain inversion

The invention provides a synaptic three-terminal device based on ferroelectric domain inversion. The device comprises a ferroelectric layer which is composed of a multicomponent oxide material with ferroelectricity, a channel layer made of a conductive material which can be regulated and controlled by a ferroelectric body so as to change the resistance, a first electrode over the ferroelectric layer, and a second electrode and a third electrode arranged on the side edge of the channel layer. According to the synaptic three-terminal device based on ferroelectric domain inversion, the resistance value of the device can be changed according to external stimulation, so that the device can simulate nerve synapses.

Full oxide heterostructure field effect transistor

The invention relates to a full oxide heterostructure field effect transistor, which is prepared by the following steps that: a p type or n type perovskite oxide material layer is grown on an n type or p type substrate, and a groove is etched on the p type or n type perovskite oxide material layer; the groove is used as a trench of the field effect transistor; the perovskite oxide material layer on one side of the trench is a source electrode, while the perovskite oxide material layer on the other side is a drain electrode; a gate insulating material layer is deposited on the source electrode, the drain electrode and the groove, and a source electrode lead hole and a drain electrode lead hole are respectively etched on the gate insulating material layer positioned on the source electrode and the drain electrode; and the source electrode is prepared in the source electrode lead hole, the drain electrode is prepared in the drain electrode lead hole, and a gate electrode is prepared on agate ...

Epitaxial growth of lanthanum aluminate film material on silicon substrate and preparation method

Light reflection differential method for testing component with small hole in biochip device and testing method thereof

The invention relates to a light reflection differential method for testing a component with a small hole in a biochip device, and a testing method thereof. The component with a small hole is a non-transparent metal block or a plastic flat plate with a small hole; the size of the small hole is designed according to the size and shape of a light spot of testing light required by testing, and the component with a small hole is installed on an adjusting seat which can rotate by 90 degrees to 360 degrees. The testing method comprises the following steps: the component with a small hole is arranged in the incidence path of a device adopting the light reflection differential method; an incidence light penetrates the small hole which can rotate vertically around the central line of the light beam and the incidence plane of the light; and the shape of the light spot entering the surface of the biochip to be tested is adjusted by a method of changing the shape of the incidence light beam, thereby ...

Process for preparing boron-doped n-shape high-hardness transparent conductive zinc oxide film

Detector for detecting wave length at infrared to far infrared light and preparing method

Heterostructure field effect transistor with functional characteristics

The invention relates to a heterostructure field effect transistor with functional characteristics, which is prepared by the following steps that: a p type or n type perovskite oxide material layer isgrown on an n type or p type substrate, and a groove is etched on the p type or n type perovskite oxide material layer; the perovskite oxide material layer on one side of the groove is a source electrode, while the perovskite oxide material layer on the other side is a drain electrode; a gate insulating material is deposited on the source electrode, the drain electrode and the groove, and a source electrode lead hole and a drain electrode lead hole are respectively etched on gate insulating material parts positioned on the source electrode and the drain electrode; the source electrode is prepared in the source electrode lead hole, the drain electrode is prepared in the drain electrode lead hole, and a gate electrode 7 is prepared on the gate insulating material; and the source electrode and ...

Apparatus and method for generating ultraviolet light by electron beam pump crystal material

The invention provides a device which generates ultraviolet radiation by electron beam direct pump crystal material, comprising crystal material; the device is characterized in that the device also comprises an electron gun and a vacuum system; the crystal material is bonded or encapsulated on the output window of the electron beam by a vacuum O-shaped ring; the vacuum system is directly connected on the electron gun; the crystal material is provided with a metal electrode; the crystal material 3 is grounded by the metal electrode, thus ensuring the electron beam to form a circuit. The method generates the ultraviolet by wide-band gap crystal material with the electron beam direct pump wide-band gap of more than 3eV. According to the requirements, different crystal materials can be selected, thus gaining the ultraviolet of different wavelengths. Continuous or pulse electron beam is selected, thus gaining ultraviolet output continuously or output by pulse.

Deposition film making system of pulse laser with added electric field

Substrate angle adjusting device used for impulse laser deposition system

Apparatus and method for generating ultraviolet light by electron beam pump crystal material

The invention provides a device which generates ultraviolet radiation by electron beam direct pump crystal material, comprising crystal material; the device is characterized in that the device also comprises an electron gun and a vacuum system; the crystal material is bonded or encapsulated on the output window of the electron beam by a vacuum O-shaped ring; the vacuum system is directly connected on the electron gun; the crystal material is provided with a metal electrode; the crystal material 3 is grounded by the metal electrode, thus ensuring the electron beam to form a circuit. The methodgenerates the ultraviolet by wide-band gap crystal material with the electron beam direct pump wide-band gap of more than 3eV. According to the requirements, different crystal materials can be selected, thus gaining the ultraviolet of different wavelengths. Continuous or pulse electron beam is selected, thus gaining ultraviolet output continuously or output by pulse.

Ultraviolet light detector of sunlight bind and its preparing method

Full oxide heterostructure field effect transistor

The invention relates to a full oxide heterostructure field effect transistor, which is prepared by the following steps that: a p type or n type perovskite oxide material layer is grown on an n type or p type substrate, and a groove is etched on the p type or n type perovskite oxide material layer; the groove is used as a trench of the field effect transistor; the perovskite oxide material layer on one side of the trench is a source electrode, while the perovskite oxide material layer on the other side is a drain electrode; a gate insulating material layer is deposited on the source electrode,the drain electrode and the groove, and a source electrode lead hole and a drain electrode lead hole are respectively etched on the gate insulating material layer positioned on the source electrode and the drain electrode; and the source electrode is prepared in the source electrode lead hole, the drain electrode is prepared in the drain electrode lead hole, and a gate electrode is prepared on agate ...

Photoelectric position detector with high sensitivity

The invention provides a photoelectric position detector with high sensitivity. The detector comprises a Si substrate and two electrodes. TiN film is epitaxially grown on the Si substrate by a film making method; the electrodes are respectively prepared on both sides of the Si substrate by a film coating method or a welding method. When a light spot illuminates the surface of the detector, a voltmeter is used for measuring a voltage between the electrodes; or a voltage source is connected between the electrodes and the TiN to cause a schottky diode composed of the TiN and the Si to work undera reverse bias condition, and then the current between the electrodes is measured; therefore, the position of the light spot can be determined according to the measured voltage or the current. The photoelectric position detector has the advantages of simple structure, good linearity and high sensitivity, can directly detect the voltage or the current without an additional amplifying circuit, and can ...

Solid-state nonlinear body material and preparation method thereof

The invention provides a solid-state nonlinear body material which is a polymer material containing noble metal nanometer granules, has the thickness of at least 1 mm, the preferential thickness of 1 cm to 80 cm, the more preferential thickness of 1 cm to 50 cm and the third-order nonlinear coefficient of 10<-6> to 10<-9> esu. The invention also provides a preparation method of the solid-state nonlinear body material. The optical material prepared by the method has stable performance and no toxin, is harmless and is applicable to the field of optical devices. The preparation process of the solid-state nonlinear body material is simple and easy to operate and has low cost.

Quick-responding high-sensitivity ultraviolet detector made by calcium-titanium oxide monocrystal material

Heterostructure field effect transistor with functional characteristics

The invention relates to a heterostructure field effect transistor with functional characteristics, which is prepared by the following steps that: a p type or n type perovskite oxide material layer is grown on an n type or p type substrate, and a groove is etched on the p type or n type perovskite oxide material layer; the perovskite oxide material layer on one side of the groove is a source electrode, while the perovskite oxide material layer on the other side is a drain electrode; a gate insulating material is deposited on the source electrode, the drain electrode and the groove, and a source electrode lead hole and a drain electrode lead hole are respectively etched on gate insulating material parts positioned on the source electrode and the drain electrode; the source electrode is prepared in the source electrode lead hole, the drain electrode is prepared in the drain electrode lead hole, and a gate electrode 7 is prepared on the gate insulating material; and the source electrode and ...

Nonlinear optical material based on metal nanometer cluster array and preparation method thereof

The invention provides a nonlinear optical material based on a metal nanometer cluster array, wherein the material includes a substrate, the metal nanometer cluster array on the substrate, and a polymer, an oxide or a metal-doped oxide wrapping the array. The material can be prepared by the following method: at first, the nanometer microspheres of polystyrene are dissolved in water to prepare a colloid water solution of the nanometer microspheres of polystyrene; the colloid water solution is coated on the substrate; the water on the substrate coated with the colloid water solution is removed to obtain orderly-arrayed colloid crystal membrane lamina with the nanometer microsphere of polystyrene; metal is deposited on the colloid crystal membrane lamina with the nanometer microsphere of polystyrene to obtain the colloid crystal membrane lamina with deposited metal; and the crystal membrane lamina of the colloid crystal membrane lamina with deposited metal is removed to obtain the substrate ...

Ferroelectric domain inversion-based two-end neuromorphic device

The invention provides a ferroelectric domain inversion-based two-end neuromorphic device. The device comprises a ferroelectric layer which is composed of a ferroelectric inorganic multi-element oxide material, and an upper electrode and a lower electrode respectively arranged at two ends of the ferroelectric layer. According to the ferroelectric domain inversion-based two-end neuromorphic device, the attributes of the device can be changed according to external stimulation, so that the device can simulate neural synapses.

Photoelectric detector with high sensitivity

The invention relates to a high-sensitivity photoelectric detector, comprising: a chip made of silicon substrate and on-silicon substrate light response layer, where the light response layer is a doped barium titanate film layer epitaxially grown on the silicon substrate; first electrode is arranged on the doped barium titanate film, second electrode is arranged on the bottom surface of the silicon substrate, contacting the air, and each electrode is connected with one end of an electrode lead, and the other end of the electrode lead is a signal output end, and two ends of a resistor are connected with the signal output ends of the two electrode leads, respectively. And it is a photovoltaic photoelectric detector, and directly generates voltage signal without any added auxiliary power supply and electronic circuit, after irradiated under light. And its response wave band is from UV to far infrared, and front edge and half width of photovoltaic pulse generated by laser pulse are -1ns and ...

Heterojunction material with magnetoresistance characteristics

Ultraviolet light detector with fast response, high sensitivity and low noise

The invention relates to an ultraviolet light detector with fast response, high sensitivity and low noise. The ultraviolet light detector comprises a photosensitive layer which is made of wide forbidden band crystalline material; the two surfaces of the photosensitive layer are respectively provided with a first electrode and a second electrode; a positive electrode of a power source is connected with a second electrode layer; a negative electrode of the power source 4 is electrically connected with a coaxial joint by a resistor; a conductive adhesive is coated on the surface of the first electrode 2; the conductive adhesive 8 is coated along the periphery of the surface of the first electrode 2; the shape of a middle blank part of the first electrode is consistent with the shape of a window on a shell; the middle blank part of the surface of the first electrode 2 is a window of the detector; and the photosensitive layer 1 is fixed on the inner wall of the shell 7 by the coated conductive ...

Method and apparatus for no-mark detection of biochip

The invention provides a method for detecting a biological chip without using any labeling reagent, which comprises the steps of enabling polarized light including a P polarized light component and an S polarized light component to be irradiated on the biological chip to be detected and transmitted, receiving the transmitted polarized light and detecting and characterizing the characteristics of the biological chip to be detected according to the P polarized light component and the S polarized light component of the received transmitted polarized light. The invention can detect the difference from the relative change of a P polarized light transmission coefficient and an S polarized light transmission coefficient and obtain more internal information and structural characteristics on biological macromolecules according to the penetration of P polarized light and S polarized light into biological samples. The device adopted by the invention has simple structure, is easy to operate, can realize ...

Sensing unit having both interaction effect and plasma oscillation effect and uses thereof

Light reflection differential method for testing component with small hole in biochip device and testing method thereof

The invention relates to a light reflection differential method for testing a component with a small hole in a biochip device, and a testing method thereof. The component with a small hole is a non-transparent metal block or a plastic flat plate with a small hole; the size of the small hole is designed according to the size and shape of a light spot of testing light required by testing, and the component with a small hole is installed on an adjusting seat which can rotate by 90 degrees to 360 degrees. The testing method comprises the following steps: the component with a small hole is arranged in the incidence path of a device adopting the light reflection differential method; an incidence light penetrates the small hole which can rotate vertically around the central line of the light beam and the incidence plane of the light; and the shape of the light spot entering the surface of the biochip to be tested is adjusted by a method of changing the shape of the incidence light beam, thereby ...

Fast response broad band laser detector made by oxide heterojunction material

Method for testing biological specimen with light reflection differential method

The invention provides a method for testing a biological specimen with a light reflection differential method. A base for carrying the biological specimen is a transparent material with double optically polished faces; and during testing, an incidence light enters from the reverse side of the biological specimen to test the specimen, thereby overcoming the defect that the produced light dispersion is tested on the surface of the biological specimen by the common light reflection differential method, increasing testing flexibility as well as lowering the requirement on the preparation of the biological specimen. The method not only is applicable to testing different biological specimens and different biochips with the mutual effect between biomacromolecules such as protein and protein, albumen and nucleic acid, nucleic acid and nucleic acid, and the like, but also can monitor the mutual reaction of the biomacromolecules in the original position in real time, thus having very wide application ...

Method for preparing YBCO high temperature superconducting film on non-texture metal baseband

The invention discloses a method for making a YBCO high-heating superconducting film in a metal base band without weaving structure, provided with: making a YBCO breaker with weaving structure in said metal base band, and then molding the breaker to epitaxial prepare an oxidize breaker and a high-heating superconducting film; while making the YBCO breaker with weaving structure, adding a foreign magnetic field apparel to the chip direction, according to the principle that YBCO crystal particles with aeolotropy paramagnetic susceptibility grow along the c axes appareled to the magnetic field with the help of the magnetic field, in such a way, YBCO growing with weaving structure perpendicular to the chip; molding the film to epitaxial prepare YSZ and CeO2 breakers, then preparing a YBCO superconducting film. The invention provides a method for making an epitaxial YBCO film in a metal base band without weaving structure.

Vacuum deposition film and film heat treating plant having applied magnetic field

Device for high-throughout monitoring micro-array biomolecule reaction by light reflection difference method

The invention provides a device for high-flux monitoring of micro array biomolecular reaction through light reflex difference method, comprising an incident light path, a sample table, an emergent light path and a data acquisition and processing system, wherein, the incident light path comprises a laser, a polarizer, a photoelastic modulator, a phase shifter and a beam expander arranged between the phase shifter and the sample table; the emergent light path comprises a polarization analyzer and an electrooptical signal converter; the electrooptical signal converter comprises a silicon photodiode array, a pulse switching circuit, a first phase-locked amplifier and a second phase-locked amplifier; the output end of the silicon photodiode array is respectively in electric connection with the input ends of the pulse switching circuit, the first phase-locked amplifier and the second phase-locked amplifier. With a simple structure and easy operation, the device reduces the noise caused by moving ...

Preparation device and preparation method of photoresist

The invention provides a preparation device and a preparation method of a photoresist. The preparation method of the photoresist comprises metal nanoparticle generation equipment and recovery equipment, wherein the metal nanoparticle generation equipment is used for generating metal nanoparticles; the recovery equipment is used for collecting the metal nanoparticles and dispersing the metal nanoparticles into liquid. By adopting the preparation device of the photoresist disclosed by the invention, the photoresist with high doping concentration of the metal nanoparticles and free of a surfactant can be prepared.