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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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01-03-2012 дата публикации

METHODS AND APPARATUS FOR IMPROVED MOTIOIN CAPTURE

Номер: US20120051596A1
Автор: Darnell Nicholas Casey, Wu Jia-Chi
Принадлежит: Activate Systems, Inc.

An apparatus includes an acquisition module, an area definition module, a comparison module and a rendering module. The acquisition module is configured to receive a first position datum and a second position datum associated with a position of an object at a first time and a second time, respectively. The area definition module is configured to set an area surrounding a first object position associated with a focal point of the first position datum as a dead-zone. The comparison module is configured to determine whether a focal point of the second position datum is within that area. If yes, the rendering module is configured to maintain a position on a display of a graphic. Otherwise, the area definition module is configured to set an area surrounding a second object position associated with the first object position and the focal point of the second position datum as the dead-zone. 1. An apparatus , comprising:an acquisition module configured to receive a first position datum associated with a position of an object at a first time, the acquisition module configured to receive a second position datum associated with a position of the object at a second time after the first time;an area definition module configured to define a focal point of the first position datum, the area definition module configured to set an area surrounding a first object position associated with the focal point of the first position datum as a dead-zone at substantially the first time;a comparison module configured to determine whether a focal point of the second position datum is within the area surrounding the first object position substantially at the second time, the area definition module configured to set an area surrounding a second object position as the dead-zone at substantially the second time if the focal point of the second position datum is outside the area surrounding the first object position, the second object position being associated with the first object position and the ...

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Номер записи: 1
10-05-2012 дата публикации

SUCTION CLEANER AND OPERATION METHOD THEREOF

Номер: US20120111367A1
Автор: Liu Chun-Hsien, Tsai Ya-Hui, Wu Chien-Feng, Wu Jia-Hsing
Принадлежит: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

A suction cleaner and an operation method thereof are provided. The suction cleaner includes a housing, a holding part, an impeller module, at least one sensing device, and a controller. An end of the housing has a dust-suction opening. The impeller module is located inside the housing, and a channel is located between the impeller module and the dust-suction opening. The controller is electrically connected to the sensing device to drive and adjust the rotation rate and the suction force of the impeller module, and thus the power consumption of the suction cleaner can be reduced. 1. A suction cleaner comprising:a housing, an end of the housing having a dust-suction opening;a holding part connected to the housing;an impeller module located inside the housing, a channel being configured between the dust-suction opening and the impeller module;a first sensing device configured on the holding part;a second sensing device configured around the dust-suction opening;a third sensing device configured in the channel; anda controller electrically connected to the impeller module, the first sensing device, the second sensing device, and the third sensing device, whereinthe controller drives the impeller module to rotate at a rotation rate based on a sensing condition of the first, second, and third sensing devices.2. The suction cleaner as recited in claim 1 , wherein the impeller module comprises a motor and an impeller structure electrically connected to the motor.3. The suction cleaner as recited in claim 1 , wherein the first sensing device is configured inside or outside the holding part.4. The suction cleaner as recited in claim 1 , wherein the first sensing device is a contact sensing device or a non-contact sensing device claim 1 , the contact sensing device is a button or a pressure sensor claim 1 , and the non-contact sensing device is an infrared sensor claim 1 , a light blocking sensor claim 1 , or a photo sensor.5. The suction cleaner as recited in claim 1 , ...

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Номер записи: 2
02-08-2012 дата публикации

SYSTEMS AND METHODS FOR ADAPTIVE CHANNEL ACCESS

Номер: US20120195216A1
Автор: Chen Chung-Pao, Hsieh Yu-Tao, Ting Pang-An, Wu Jia-Hao
Принадлежит:

A base station and method for adaptive channel access in a wireless network are provided. The base station assigns a channel access scheme for providing channel access to service data, wherein at least a portion of the service data is assigned to one of a reserved shared channel access scheme and a superimposed channel access scheme based on one or more characteristics of the network and one or more requirements of the service data. Network resources are then allocated according to the assigned channel access scheme. The service data is then transmitted using the allocated resources. 1. A method for adaptive channel access in a wireless network , the method comprising:monitoring one or more characteristics of the wireless network;assigning, by a base station of the wireless network, a channel access scheme for providing channel access to service data, wherein at least a portion of the service data is assigned to one of a reserved shared channel access scheme and a superimposed channel access scheme based on the one or more characteristics of the network and one or more requirements of the service data;allocating resources of the network according to the assigned channel access scheme, wherein the resources are allocated in resource blocks; andcausing the service data to be transmitted using the allocated resources.2. The method of claim 1 , wherein upon assignment to a reserved shared channel access scheme claim 1 , the causing further includes transmitting the portion of the service data on one or more channels that are reserved for transmission of service data claim 1 , but shared among network devices.3. The method of claim 1 , wherein upon assignment to a superimposed channel access scheme claim 1 , the allocating further includes allocating the service data to one or more channels already transmitting mobile station data and superimposing the service data on the mobile station data.4. The method of claim 1 , wherein assigning to a superimposed channel access ...

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Номер записи: 3
27-09-2012 дата публикации

PROCESS FOR PREPARING AQUEOUS DISPERSIONS CONTAINING HIGH CONCENTRATION OF NANO/SUBMICRON, HYDROPHOBIC, FUNCTIONAL COMPOUNDS

Номер: US20120244134A1
Автор: CHEN Chung-Jen, CHEN Ru-Yin, CHU Chung-Liang, HUANG Chih-Ping, TSAI Yi-Jie, WU Jia-Jiu
Принадлежит:

The present invention provides a process for preparing an aqueous dispersion containing a high concentration of nano/submicron, hydrophobic, functional compounds. The process is carried out by using a complex stabilizer having an HLB value of about 10 to about 17, comprising lecithin and at least one non-phospholipid selected from polysorbate, sucrose ester, and polyglycerol fatty acid ester; selecting a specific weight ratio of the hydrophobic functional compounds and the stabilizer; and using homogenization technique, media milling technique, and/or centrifugal technique. The aqueous dispersion containing a high concentration of nano/submicron, hydrophobic, functional compound produced by the process of the invention has stable dispersibility and improved bioavailability, and can be applied to the fields of foods and pharmaceuticals. 1. A process for preparing an aqueous dispersion containing a high concentration of nano/submicron , hydrophobic , functional compounds , which comprises the following steps:formulating a complex stabilizer and water into an aqueous solution containing a complex stabilizer, wherein said complex stabilizer has an HLB value of about 10 to about 17 and comprises lecithin and at least one non-phospholipid selected from polysorbate, sucrose ester, and polyglycerol fatty acid ester,incorporating hydrophobic, functional compounds into the aqueous solution containing a complex stabilizer to form a non-homogenously mixed liquid wherein the weight ratio of the hydrophobic, functional compounds to the complex stabilizer is from 2:1 to 10:1,subjecting the non-homogenously mixed liquid to a homogenization pretreatment to form a homogenously mixed liquid,subjecting the homogenously mixed liquid to nano-grade wet grinding to form an aqueous dispersion, andoptionally, subjecting the aqueous dispersion from nano-grade wet grinding to a centrifugal step and collecting the supernatant.2. The process of claim 1 , wherein the hydrophobic claim 1 , ...

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Номер записи: 4
01-11-2012 дата публикации

ELECTROLYTE COMPOSITION AND DYE-SENSITIZED SOLAR CELL USING THE SAME

Номер: US20120273044A1
Автор: Chen Jen-An, CHOU Yu-Kai, Ho Wen-Yueh, Tung Yung-Liang, Wu Jia-Yin
Принадлежит: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

The disclosure provides an electrolyte composition and dye-sensitized solar cell using the same. The electrolyte composition includes a diionic liquid of Formula: Z(X-Y-X)Z′, wherein X includes ammonium, imidazolium, pyridinium or phosphonium, Y is (CH)n, n is an integer of 1-16, Z is I, and Z′ is I, PF, BF, N(SOCF), NCS or N(CN). 1. A dye-sensitized solar cell , comprising:a working electrode, wherein the working electrode comprises an electrode substrate and an oxide semiconductor porous film formed on the electrode substrate;a counter electrode disposed oppositely from the working electrode; {'br': None, 'sup': −', '−, 'Z(X-Y-X)Z′'}, 'an electrolyte composition provided between the working electrode and the counter electrode, wherein the electrolyte composition comprises a diionic liquid having a Formula{'sub': 2', 'n', '6', '4', '2', '3', '2, ', wherein X is ammonium, imidazolium, pyridinium or phosphonium, Y is (CH), n is an integer of 1-16, Z is I, and Z′ is I, PF, BF, N(SOCF), NCS or N(CN).'}3. The dye-sensitized solar cell as claimed in claim 1 , further comprising: a solvent claim 1 , a stabilizer and a soluble electrolyte.4. The dye-sensitized solar cell as claimed in claim 3 , wherein the solvent comprises ethanol claim 3 , acetonitrile claim 3 , methoxy acetonitrile claim 3 , propionitrile claim 3 , 3-methoxypropionitrile (MPN) claim 3 , ethyl carbonate claim 3 , propyl carbonate claim 3 , ethylene carbonate or 2-ethyl-4-methyl imidazole.5. The dye-sensitized solar cell as claimed in claim 3 , wherein the stabilizer comprises lithium iodide (LiI) claim 3 , N-butyl benzimidazole (NBB) claim 3 , 1-methylbenzimida (NMBI) or 4-tert-butyl pyridine (TBP).6. The dye-sensitized solar cell as claimed in claim 3 , wherein the soluble electrolyte comprises 1-propyl-3-methyl imidazolium iodide (PMII) claim 3 , 1-ethyl-3-methyl imidazolium iodide (EMII) claim 3 , 1 claim 3 ,3-dimethyl imidazolium iodide (DMII) or 1-allyl-3-methyl imidazolium iodide (AMII).7. The dye- ...

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Номер записи: 5
17-01-2013 дата публикации

HEAT PIPE

Номер: US20130014919A1
Автор: CHEN WEN-HU, DAI SHENG-LIANG, LIU YUE, LO YU-LIANG, SHEN HAI-PING, WU JIA-HONG
Принадлежит:

A heat pipe includes a casing and a plurality of wick layers. The casing has an inner wall. The wick layers stack at an inner surface of the casing in turn. The wick layers respectively define a plurality of pores therein. Diameters of the pores of each of the wick layers gradually decrease from the inner wall to center of the casing.

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Номер записи: 6
31-01-2013 дата публикации

Unsymmetrical Dipole Antenna

Номер: US20130027266A1
Автор: Chen I-Shan, Hsu Cheng-Hsiung, Lin Chao-Chun, Lin Chia-Hong, Wu Jia-Fong
Принадлежит:

An unsymmetrical dipole antenna includes a grounding element, a radiating element, and a feed-in wire. The grounding element includes a first short side metal plane and a first long side metal plane. The radiating element includes a second short side metal plane and a second long side metal plane. The feed-in wire includes a metal wire, coupled to the second short side metal plane for transmitting a feed-in signal; an insulation layer, covering the metal wire; a metal weave, covering the insulation layer, having one terminal coupled to the first short side metal plane of the grounding element, and another terminal coupled to a system ground of the wireless communication device; and a protective layer, covering the metal weave. A size of the grounding element and a size of the radiating element are irrelative. 1. An unsymmetrical dipole antenna for a wireless communication device , comprising: a first short side metal plane, extending toward a first direction; and', 'a first long side metal plane, coupled to the first short side metal plane, and extending toward a second direction substantially perpendicular to the first direction;, 'a grounding element, comprising a second short side metal plane, separating from the first short side metal plane by a first distance, and extending toward an opposite direction of the first direction; and', 'a second long side metal plane, coupled to the second short side metal plane, and extending toward the second direction; and, 'a radiating element, comprising a metal wire, coupled to the second short side metal plane of the radiating element, for transmitting a feed-in signal;', 'an insulation layer, covering the metal wire;', 'a metal weave, covering the insulation layer, having one terminal coupled to the first short side metal plane of the grounding element and another terminal coupled to a system ground of the wireless communication device; and', 'a protective layer, covering the metal weave;, 'a feed-in wire, comprisingwherein ...

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Номер записи: 7
31-01-2013 дата публикации

MAINTAINING AND SUPPLYING SPEECH MODELS

Номер: US20130030802A1
Автор: Jia Bin, Liu Ying, Lu E. Feng, Wu Jia, Zhang Zhen
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

Maintaining and supplying a plurality of speech models is provided. A plurality of speech models and metadata for each speech model are stored. A query for a speech model is received from a source. The query includes one or more conditions. The speech model with metadata most closely matching the supplied one or more conditions is determined. The determined speech model is provided to the source. A refined speech model is received from the source, and the refined speech model is stored. 1. A method of maintaining and supplying a plurality of speech models comprising:storing a plurality of speech models;storing metadata for each stored speech model;receiving a query for a speech model from a source, the query comprising one or more conditions;determining the speech model with metadata most closely matching the supplied one or more conditions;supplying the determined speech model to the source;receiving a refined speech model from the source; andstoring the refined speech model.2. The method of claim 1 , wherein storing the refined speech model comprises replacing the determined speech model with the refined speech model.3. The method of claim 1 , wherein the query for the speech model comprises a condition identifying a user at the source and the metadata for the determined speech model includes details of the identified user.4. The method of claim 1 , further comprising:receiving new metadata for the refined speech model from the source; andstoring the new metadata for the refined speech model.5. The method of claim 4 , wherein the query for the speech model comprises a condition identifying an environment at the source claim 4 , the metadata for the determined speech model does not include details of the identified environment and the storing of the new metadata for the refined speech model includes details of the identified environment.6. A system for maintaining and supplying a plurality of speech models comprising:one or more storage devices configured to store ...

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Номер записи: 8
28-02-2013 дата публикации

DISPLAY AND OPERATING METHOD THEREOF

Номер: US20130050298A1
Автор: Chang Chin-Tien, Su Hsin-Chia, Wu Jia-Hao
Принадлежит: HIMAX TECHNOLOGIES LIMITED

A display and an operating method thereof are provided. The display includes a display panel, a timing controller, and a plurality of source drivers. The source drivers are coupled to the timing controller and the display panel, and the source drivers are coupled to one another. The timing controller outputs a plurality of training packets to the source drivers. When the source drivers lock a clock of the timing controller according to the training packets, a lock signal is output to the timing controller. The timing controller outputs a plurality of color data packets and at least one latch signal to the source drivers based on the lock signal. The source drivers respectively output a plurality of pixel voltages to the display panel according to the latch signal. The training packets and the color data packets are serially transmitted to the source drivers. 1. A display comprising:a display panel;a timing controller; anda plurality of source drivers coupled to the timing controller and the display panel, the source drivers being coupled to one another,wherein the timing controller outputs a plurality of training packets to the source drivers, when the source drivers lock a clock of the timing controller based on the training packets, a lock signal is output to the timing controller, the timing controller outputs a plurality of color data packets and at least one latch signal to the source drivers based on the lock signal, the source drivers respectively output a plurality of pixel voltages corresponding to the color data packets to the display panel based on the at least one latch signal, and the training packets and the color data packets are serially transmitted to the source drivers.2. The display as recited in claim 1 , the source drivers sequentially locking the clock of the timing controller claim 1 , wherein when an isource driver of the source drivers locks the clock of the timing controller claim 1 , the isource driver outputs a clock lock signal to an (i+ ...

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Номер записи: 9
11-04-2013 дата публикации

DISPLAY AND OPERATING METHOD THEREOF

Номер: US20130088531A1
Автор: Lee Chuan-Che, Su Hsin-Chia, Wu Jia-Hao
Принадлежит: HIMAX TECHNOLOGIES LIMITED

A display and an operating method thereof are provided. The display includes a display panel, a timing controller, and a plurality of source drivers. The timing controller has a plurality of signal output terminals The source drivers are coupled to the timing controller and the display panel. The timing controller outputs a plurality of training packets to the source drivers. When the source drivers lock a clock of the timing controller according to the training packets, the timing controller outputs a plurality of control packets and a plurality of color data packets to the source drivers. The source drivers respectively output a plurality of pixel voltages corresponding to the color data packets to the display panel according to the corresponding control packets. The training packets, the control packets, and the color data packets are serially transmitted to the source drivers via the signal output terminals. 1. A display comprising:a display panel;a timing controller having a plurality of signal output terminals; anda plurality of source drivers coupled to the timing controller and the display panel,wherein the timing controller outputs a plurality of training packets to the source drivers, when the source drivers lock a clock of the timing controller based on the training packets, the timing controller outputs a plurality of control packets and a plurality of color data packets to the source drivers, and the source drivers respectively output a plurality of pixel voltages corresponding to the color data packets to the display panel based on corresponding control packets of the control packets, the training packets, the control packets, and the color data packets being serially transmitted to the source drivers via the signal output terminals2. The display as recited in claim 1 , wherein the source drivers respectively output a clock lock signal to the timing controller when the source drivers lock the clock of the timing controller.3. The display as recited in ...

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Номер записи: 10
11-04-2013 дата публикации

AUTHENTICATION METHOD AND APPARATUS FOR USER EQUIPMENT AND LIPA NETWORK ENTITIES

Номер: US20130091552A1
Автор: Cheng Ching-Wen, Lin Yung-Chun, Wu Jia-Wei, Yang Shun-Ren
Принадлежит: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

An authentication method for user equipment (UE) and LIPA network entities is applicable to a cross-LIPA communication environment having an UE end, a visiting LIPA network entity end (LIPA), and a home LIPA network entity end (LIPA). The UE end successfully registers to a core network (CN) via the LIPA, thereby attaining mutual trust relationship between the UE end and the LIPA. The UE end successfully registers to the CN via the LIPA, thereby attaining mutual trust relationship between the UE end and the LIPA. The LIPArequests the UE end via the LIPAfor successfully re-authenticating the CN, thereby attaining mutual trust relationship between the LIPAand the LIPA. 1. An authentication method for local internet protocol access (LIPA) network entity and user equipment (UE) , adapted to a cross-LIPA communication situation getting involved with a UE end , a visiting LIPA network entity end (LIPA) , and a home LIPA network entity end (LIPA) , and comprising:{'sub': V', 'V, 'successfully registering to a CN by said UE end via said LIPA, to attain mutual trust relationship of said UE end and said LIPA;'}{'sub': H', 'H, 'successfully registering to said CN by said UE end via said LIPA, to attain mutual trust relationship of said UE end and said LIPA; and'}{'sub': H', 'V', 'V', 'H, 'requesting said UE end by said LIPAfor re-authentication and successfully re-authenticating said UE end via said LIPA, to attain mutual trust relationship of said LIPAand said LIPA.'}2. The authentication method as claimed in claim 1 , wherein said UE end represents one or more UEs claim 1 , said LIPArepresents one or more visiting LIPA network entities claim 1 , said LIPArepresents one or more home LIPA network entities.3. The authentication method as claimed in claim 1 , wherein a three-way mutual authentication of said UE end claim 1 , said LIPA claim 1 , and said LIPAis attained by a user end triggered authentication procedure.4. The authentication method as claimed in claim 1 , wherein a ...

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Номер записи: 11
18-04-2013 дата публикации

TOUCH DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20130093696A1
Автор: Cai Zhixiong, Huang Pingping, Jiang Yau-Chen, Wu Jia
Принадлежит:

The present disclosure relates to a touch technology, especially to a touch device and a manufacturing method thereof. The touch device comprises a sensing electrode structure, a shielding layer, a plurality of peripheral connection wires and a grounding wire. The shielding layer surrounds the periphery of the sensing electrode structure. The plurality of peripheral connection wires are located under the shielding layer and electrically connected to the sensing electrode structure. The grounding wire is electrically connected to the shielding layer. Thus, in accordance with the present disclosure, the touch device can shield external interference, and the reliability for operation of the touch circuit can be improved. 1. A touch device , comprising:a sensing electrode structure;a shielding layer surrounding periphery of the sensing electrode structure;a plurality of peripheral connection wires located under the shielding layer and electrically connected to the sensing electrode structure; anda grounding wire electrically connected to the shielding layer.2. The touch device of claim 1 , wherein the sensing electrode structure is located on a lower surface of a substrate.3. The touch device of claim 2 , further comprising:an insulation layer located on the lower surface of the substrate and sandwiched between the substrate and the shielding layer.4. The touch device of claim 1 , further comprising:a first insulation element disposed between the shielding layer and the peripheral connection wires to insulate the shielding layer from the peripheral connection wires.5. The touch device of claim 1 , further comprising:an insulating protection layer covered on surfaces of the sensing electrode structure, the peripheral connection wires, and the grounding wire.6. The touch device of claim 1 , wherein the grounding wire surrounds periphery of the peripheral connection wires.7. The touch device of claim 1 , wherein the sensing electrode structure further comprises an ...

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Номер записи: 12
06-06-2013 дата публикации

ORGANIC DYES AND PHOTOELECTRIC CONVERSION DEVICES

Номер: US20130144069A1
Автор: Chen Jen-An, Hsu Hsin-Yi, Jhong Min-Fong, TSAI Song-Yeu, Tung Yung-Liang, Wu Chun-Guey, Wu Jia-Yin
Принадлежит: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Organic dyes and photoelectric conversion devices are provided. The Organic dye has the structure represented by formula (I) 5. A photoelectric conversion device claim 1 , comprising the organic dye as claimed in .6. The photoelectric conversion device as claimed in claim 5 , wherein the photoelectric conversion device comprises a flat display device.7. The photoelectric conversion device as claimed in claim 5 , wherein the photoelectric conversion device comprises an organic electroluminescent device.8. The photoelectric conversion device as claimed in claim 5 , wherein the photoelectric conversion device comprises an organicphotovoltaic device.9. The photoelectric conversion device as claimed in claim 5 , wherein the photoelectric conversion device comprises a solar cell.10. The photoelectric conversion device as claimed in claim 5 , wherein the photoelectric conversion device comprises a dye-sensitized solar cell. This application is a Divisional of pending U.S. patent application Ser. No. 12/650,881, filed Nov. 18, 2010 and entitled “Organic dyes and photoelectric conversion devices”, which is based upon and claims the benefit of priority from the prior Taiwan Patent Application No. 98116139, filed on May 15, 2009, the entire contents of which are incorporated herein by reference.1. Field of the InventionThe invention relates to an organic dye and, more particularly, to an organic dye used in photoelectric conversion devices.2. Description of the Related ArtThe demand for energy conservation triggered the search for alternate renewable energy sources. Recently, Gratzel and O'Regan have proposed a new type of solar cell known as a dye-sensitized solar cell (DSSC), which they claimed to be more efficient than other commercially available solar cells. The proposal has drawn much interest from solar cell researchers in academia and industry. Typically a dye-sensitized solar cell is constituted with four parts including an anode/cathode for providing a channel for ...

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Номер записи: 13
27-06-2013 дата публикации

HEAT PIPE WITH COMPOSITE WICK STRUCTURE

Номер: US20130160976A1
Автор: CHENG NIEN-TIEN, WU JIA-HONG
Принадлежит:

An exemplary heat pipe includes an elongated casing, a first wick structure, a second wick structure, and working medium filled in the casing. The heat pipe has an evaporating section and a condensing section. The first wick structure is located within an inner wall of the casing and defines a window at the evaporating section of the heat pipe. The first wick structure has a first pore size. The second wick structure is received in the window of the first wick structure. The second wick structure is in direct physical contact with the inner wall of the evaporating section of the casing and the first wick structure. The second wick structure has a second pore size smaller than the first pore size of the first wick structure. The working medium saturates the first wick structure and the second wick structure. 1. A heat pipe , comprising:an elongated casing having an evaporating section and a condensing section;a first wick structure located within an inner wall of the casing, the first wick structure defining a window at the evaporating section of the heat pipe, the first wick structure having a first pore size;a second wick structure received in the window of the first wick structure, the second wick structure being in direct physical contact with the inner wall of the evaporating section of the casing and the first wick structure, the second wick structure having a second pore size smaller than the first pore size of the first wick structure; andworking medium filled in the casing and saturating the first wick structure and the second wick structure.2. The heat pipe of claim 1 , wherein the first wick structure is screen mesh and the second structure is sintered powder wick structure.3. The heat pipe of claim 1 , wherein the heat pipe is a flat-type heat pipe claim 1 , a width of the casing being larger than a height of the casing.4. The heat pipe of claim 3 , wherein the height of the casing is not larger than 2 mm.5. The heat pipe of claim 1 , wherein the first ...

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Номер записи: 14
22-08-2013 дата публикации

SYSTEMS AND METHODS FOR IDENTIFYING AND MERGING RECORDED SEGMENTS BELONGING TO THE SAME PROGRAM

Номер: US20130216207A1
Автор: Berry Joshua, Wu Jia Jane
Принадлежит: Rovi Guides, Inc.

Systems and methods for providing an interactive media guidance application for merging recorded video segments that are from the same program are provided. In response to a recording interruption, the interactive media guidance application may record multiple video segments. After recording the segments, the interactive media guidance application may search for and merge these segments to form a single recording. In some embodiments, the interactive media guidance application may detect the presence of a previously recorded segment. After detecting the previously recorded segment, the interactive media guidance application may automatically record the video following the end of the previously recorded segment. The interactive media guidance application may use data associated with the segments and other media cues to match the segments. The interactive media guidance application may also identify the duration of the recorded video content and provide choices for recording the video again. 155-. (canceled)56. A method for displaying media asset listings at a user equipment , comprising:recording a segment of a first media asset;determining that the segment is an incomplete recording of the first media asset;searching a database of media asset listings to identify a first media asset listing corresponding to a first time that the first media asset will be made available again in the future and a second media asset listing corresponding to a second time that the first media asset will be made available again in the future; andgenerating a list for displaying the first media asset listing and the second media asset listing in an order determined based on whether a second media asset is scheduled to be recorded at the user equipment at one of the first and second times.57. The method of claim 56 , wherein the determining that the segment is an incomplete recording of the first media asset is made upon detecting that a system failure occurred.58. The method of claim 56 , ...

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Номер записи: 15
03-10-2013 дата публикации

HEAT PIPE WITH GRID WICK STRUCTURE HAVING RHOMBUSES

Номер: US20130255921A1
Автор: DAI SHENG-LIANG, LO YU-LIANG, WU JIA-HONG
Принадлежит:

An exemplary heat pipe includes a tube, an evaporation section and a condenser section located at two opposite ends of the tube, a grid wick structure received in the tube and abutting an inner wall of the tube, and a working fluid sealed in the tube. The grid wick structure includes a plurality of rhombuses. Each rhombus includes two opposite first included angles, one of the first included angles is at a point of the rhombus nearest one of the ends of the tube, the other first included angle is at a point of the rhombus nearest the other end of the tube. Each first included angle is smaller than 90 degrees. 1. A heat pipe , comprising:a tube, the tube having an evaporation section and a condenser section located at two opposite ends thereof;a grid wick structure received in the tube and abutting an inner wall of the tube, the grid wick structure comprising a plurality of rhombuses, each rhombus comprising two first included angles opposite to each other, one of the first included angles being at a point of the rhombus nearest one of the ends of the tube, the other first included angle being at a point of the rhombus nearest the other end of the tube, each first included angle being smaller than 90 degrees; anda working fluid sealed in the tube.2. The heat pipe of claim 1 , wherein each rhombus further comprises two second included angles opposite to each other claim 1 , a length of an imaginary line interconnecting vertexes of the two first included angles being larger than that of an imaginary line interconnecting vertexes of the two second included angles.3. The heat pipe of claim 2 , further comprising another grid wick structure with squares claim 2 , wherein the another grid wick structure with squares and the grid wick structure with rhombuses are stacked one on the other.4. The heat pipe of claim 3 , wherein one of the sidelines of the each square overlaps the imaginary line interconnecting the two second included angles of a corresponding one of the ...

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Номер записи: 16
24-10-2013 дата публикации

System and Method for Pilot Design

Номер: US20130279627A1
Автор: Hsieh Yu-Tao, Ting Pang-An, Wang Lai-Huei, Wu Jia-Hao
Принадлежит:

An apparatus for generating a pilot pattern for data to be transmitted in an orthogonal frequency-division multiplexing (OFDM) based communication system, having a for allocating pilot symbols for a plurality of data streams to form a plurality of pilot clusters in the pilot pattern, wherein each of the pilot clusters includes ones of the pilot symbols, the ones of the pilot symbols being for respectively different ones of the data streams. The apparatus also includes a mechanism for moving at least one of the pilot clusters from a first location in the resource block to a second location in the resource block to generate a second pilot pattern, the first and second locations being symmetrical in time, and a mechanism for generating a third pilot pattern based on the first and second pilot patterns. 1. An apparatus for generating a pilot pattern for data to be transmitted in an orthogonal frequency-division multiplexing (OFDM) based communication system , comprising:means for allocating pilot symbols for a plurality of data streams to form a plurality of pilot clusters in the pilot pattern,wherein each of the pilot clusters includes ones of the pilot symbols, the ones of the pilot symbols being for respectively different ones of the data streams;wherein the pilot pattern is a first pilot pattern represented by a resource block;means for moving at least one of the pilot clusters from a first location in the resource block to a second location in the resource block to generate a second pilot pattern, the first and second locations being symmetrical in time; andmeans for generating a third pilot pattern based on the first and second pilot patterns.2. An apparatus for generating a pilot pattern for data to be transmitted in an orthogonal frequency-division multiplexing (OFDM) based communication system , comprising:means for allocating first and second pilot symbols for first and second ones of a plurality of data streams, respectively, to a same subcarrier of the ...

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Номер записи: 17
05-12-2013 дата публикации

Recycling Method for Waste Ceramic Filters

Номер: US20130319461A1
Автор: LI Rui-Dong, WANG Jenn-Shing, WANG Yu-Ching, WU Jia-Yu
Принадлежит:

Disclosed is a recycling method for waste ceramic filters, and the recycling method includes the steps of heating a waste ceramic filter that no longer has the oil filtering effect, applying an acid to the waste ceramic filter to remove unwanted substances attached on the filter, performing a washing or dewatering step to remove any acid solution remained on the ceramic filter, and performing a drying step to dry the ceramic filter. 1. A recycling method for waste ceramic filters , used for removing attached substances from the ceramic filters , comprising:a heat treatment step for removing hydrocarbons and colloids on the ceramic filters by heat, wherein the ceramic filters are arranged vertically in an oven;an acid treatment step for dipping solid particles attached on the ceramic filters to dissolve the solid particles by an acid solution;a washing step for washing away the acid solution remained on the ceramic filters; anda drying step for drying the ceramic filters.2. The recycling method for waste ceramic filters according to claim 1 , wherein the heat treatment step has a processing temperature ranging from 300° C. to 500° C. claim 1 , and a processing time ranging from 10 minutes to 100 minutes.3. The recycling method for waste ceramic filters according to claim 1 , wherein the acid solution has a pH value ranging from 2 to 6 claim 1 , and the acid solution is selected from the group consisting of hydrochloric acid claim 1 , sulfuric acid and nitric acid.4. The recycling method for waste ceramic filters according to claim 1 , wherein the washing step adopts a weak alkaline solution claim 1 , salt water or water for rinsing.5. The recycling method for waste ceramic filters according to claim 1 , wherein the ceramic filters each has an interconnecting pore structure with a pore size ranging from 0.5 μm to 10 μm.6. The recycling method for waste ceramic filters according to claim 1 , wherein the drying step adopts a microwave heating method for heating the ...

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Номер записи: 18
06-02-2014 дата публикации

METHOD AND SYSTEM FOR A WEB SERVER TRANSMITTING A RESPONSE TO AN ACCESS REQUEST

Номер: US20140040347A1
Автор: Jia Bin, Liu Ying, Lu E. Feng, Shen Yan Rong, Wu Jia, Zhang Zhen
Принадлежит:

According to embodiments, method, systems, and computer program products are provided for a web server transmitting a response to an access request. An access request for a web application program deployed on a web server is received, where a response corresponding to the access request is composed with a script. A test script is transmitted. A response time of the test script is received. The response time includes a time that the test script is executed in a browser of a client and a time that the test script is transferred over a network. Different responses are transmitted to different types of scripts included in the response corresponding to the access request in accordance with the response time of the test script. 1. A method for a web server to transmit a response to an access request , the method comprising:receiving an access request for a web application program deployed on a web server, wherein a response corresponding to the access request is composed with a script;transmitting a test script;receiving a response time of the test script, the response time including a time that the test script is executed in a browser of a client and a time that the test script is transferred over a network; andtransmitting different responses to different types of scripts included in the response corresponding to the access request in accordance with the response time of the test script.2. The method according to claim 1 , wherein said different types of scripts include a graphical user interface (GUI) script and a logic script.3. The method according to claim 2 , wherein said transmitting different responses to different types of scripts included in the response corresponding to the access request in accordance with the response time of the test script includes:parsing the GUI script included in the response corresponding to the access request into an HTML tag, and transmitting the parsed HTML tag and the logic script included in the response corresponding to the ...

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Номер записи: 19
27-02-2014 дата публикации

HEAT PIPE AND METHOD FOR MAKING THE SAME

Номер: US20140054014A1
Автор: DAI SHENG-LIANG, LO YU-LIANG, WU JIA-HONG
Принадлежит:

A heat pipe includes an elongated tube, a wick structure arranged on an inner wall of the tube, and a working fluid filled in the tube. The wick structure defines elongated liquid channels for condensed working fluid flowing therethrough. An elongated vapor channel is defined in the tube for vaporized working fluid flowing therethrough. The vapor channel is spaced from the liquid channels by the wick structure. 1. A heat pipe comprising:an elongated tube;a working fluid contained in the tube; anda wick structure received in the tube and arranged on an inner wall of the tube, the wick structure defining a plurality of elongated liquid channels for condensed working fluid flowing therethrough, an elongated vapor channel being defined in the tube for vaporized working fluid flowing therethrough, the vapor channel being spaced from the liquid channels by the wick structure.2. The heat pipe of claim 1 , wherein the vapor channel is defined in a center of the tube claim 1 , the liquid channels surrounding the vapor channel claim 1 , the tube comprising an evaporator section and an opposite condenser section claim 1 , the liquid channels and the vapor channel extending along an axial direction of the tube from the evaporator section to the condenser section.3. The heat pipe of claim 1 , wherein a transverse cross-section of each liquid channel along a radial direction of the tube is a triangle.4. The heat pipe of claim 1 , wherein a transverse cross-section of each liquid channel along a radial direction of the tube is circular.5. The heat pipe of claim 1 , wherein the liquid channels surround the vapor channel and are spaced from each other with a same interval.6. The heat pipe of claim 1 , wherein the wick structure has a porosity in a range from 20 to 60 percent.7. The heat pipe of claim 1 , wherein an area of a transverse cross-section of each liquid channel is less than 7 square millimeters.8. The heat pipe of claim 1 , wherein a total area of transverse cross- ...

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Номер записи: 20
06-03-2014 дата публикации

HEAT PIPE AND METHOD FOR MANUFACTUREING THE SAME

Номер: US20140060781A1
Автор: JIA ZHAO-HUI, LO YU-LIANG, WU JIA-HONG
Принадлежит:

An exemplary heat pipe includes a first pipe and a second pipe. The first pipe includes a condenser section and an evaporator section extending from the condenser section along a longitudinal direction thereof. The second pipe encloses the condenser section of the first pipe. The evaporator section is located at an outside of the second pipe. The second pipe includes a casing enclosing the condenser section, second wick structures and working fluid contained in the second wick structures. Opposite ends of each second wick structure are respectively adhered to an inner wall of the casing and an outer periphery of the condenser section. 1. A heat pipe comprising:a first pipe comprising a condenser section and an evaporator section extending from the condenser section along a longitudinal direction thereof; anda second pipe enclosing the condenser section of the first pipe, the evaporator section located at an outside of the second pipe, and the second pipe comprising a casing enclosing the condenser section, a plurality of second wick structures and working fluid contained in the casing.2. The heat pipe of claim 1 , wherein opposite ends of each second wick structure attached to an inner wall of the casing and an outer wall of the condenser section.3. The heat pipe of claim 2 , wherein the second wick structures are spaced from each other and a channel is defined between each two adjacent second wick structures to allow vaporized working fluid flowing therethrough.4. The heat pipe of claim 3 , wherein the second wick structures are evenly distributed around the inner wall of the casing of the second pipe.5. The heat pipe of claim 3 , wherein each second wick structure has a convex outer end attached to the inner wall of the casing claim 3 , and a concave inner end opposite to the outer end and attached to the outer wall of the condenser section claim 3 , and a width of each second wick structure decreases from the outer end to the inner end.6. The heat pipe of claim 1 ...

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Номер записи: 21
03-01-2019 дата публикации

METHOD, DEVICE AND EQUIPMENT FOR FUSING DIFFERENT INSTANCES DESCRIBING SAME ENTITY

Номер: US20190005392A1
Автор: HUA NENGWEI, MU Guanyu, Wu Jia, Yang Yang, ZHANG Wei
Принадлежит:

Disclosed is a method, a device and equipment for fusing different instances describing the same entity. The method includes: acquiring a connection diagram comprising a plurality of instances, where different nodes in the connection diagram represent different instances, and connection lines between the nodes represent instance relations between the instances corresponding to the nodes; based on the instance relations, identifying different instances describing the same entity in the connection diagram, fusing the nodes corresponding to the identified instances, and updating the connection diagram. 1. A computing device , comprising:a memory for storing a connection diagram comprising a plurality of instances, wherein different nodes in the connection diagram represent different instances, and connection lines between the nodes represent instance relations between the instances corresponding to the nodes; and based on the instance relations, identify different instances describing the same entity in the connection diagram, fuse the nodes corresponding to the identified instances, and update the connection diagram;', 'in the updated connection diagram, identify an instance pair with an unidentified instance relation, and add a connection line to connect the nodes corresponding to instances in the instance pair;, 'a processor connected to the memory, wherein the processor is capable of acquiring the connection diagram from the memory, and the processor is configured toiteratively perform the step of updating the connection diagram based on the instance relations and the operation of adding a connection line in the updated connection diagram until a specified condition is satisfied.2. A device for fusing different instances describing the same entity , comprising:an acquiring module for acquiring a connection diagram comprising a plurality of instances, wherein different nodes in the connection diagram represent different instances, and connection lines between the ...

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Номер записи: 22
08-01-2015 дата публикации

PROTEIN AND GENE RELATED WITH BASAL THERMOTOLERANCE OF PLANTS

Номер: US20150011734A1
Автор: Wang Lian-Chin, Wu Jia-Rong, Wu Shaw-Jye
Принадлежит: National Central University

An isolated protein having SEQ ID NO:1 and an isolated gene encoding the protein are provided. The protein is related with basal thermotolerance of plants having the protein. 1. An isolated protein having SEQ ID NO:1 , wherein the protein is related with basal thermotolerance of plants having the protein.2. The isolated protein having SEQ ID NO:1 of claim 1 , wherein expression of the protein can increase a tolerance of the plants having the protein to high temperature in an environment.3. The isolated protein having SEQ ID NO:1 of claim 1 , wherein the protein has an ability to remodel a chromatin of the plants having the protein.4Arabidopsis.. The isolated protein having SEQ ID NO:1 of claim 1 , wherein the plants comprise5. An isolated gene encoding the isolated protein having SEQ ID NO:1 of claim 1 , wherein the protein is related with basal thermotolerance of plants having the protein.6. The isolated gene of claim 5 , wherein the gene has SEQ ID NO:2 or a degenerated sequence thereof.7. The isolated gene of claim 5 , wherein expression of the protein increases a tolerance of the plants having the protein to high temperature in an environment.8. The isolated gene of claim 5 , wherein the protein has an ability to remodel a chromatin of the plants having the protein.9Arabidopsis.. The isolated gene of claim 5 , wherein the gene is originated from This application claims the priority benefit of Taiwan application serial no. 102124196, filed on Jul. 5, 2013. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.1. Field of the InventionThe invention relates to a protein and a gene, and more particularly, to a protein and a gene related with basal thermotolerance of plants.2. Description of Related ArtGreenhouse effect caused a rise in temperature around the globe, and the warming climate directly affects problems related to ecology and food. Moreover, temperature variations directly ...

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Номер записи: 23
14-01-2016 дата публикации

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Номер: US20160013104A1
Автор: CHANG Tsung-Hung, Chen Yi-Wei, Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Lin Ching-Ling, Lin Chun-Hsien, Wu Jia-Rong
Принадлежит:

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least one metal gate thereon, a source/drain region adjacent to two sides of the at least one metal gate, and an interlayer dielectric (ILD) layer around the at least one metal gate; forming a plurality of contact holes in the ILD layer to expose the source/drain region; forming a first metal layer in the contact holes; performing a first thermal treatment process; and performing a second thermal treatment process. 1. A method for fabricating semiconductor device , comprising:providing a substrate having at least one metal gate thereon, a source/drain region adjacent to two sides of the at least one metal gate, a contact etch stop layer (CESL) around the at least one metal gate, and an interlayer dielectric (ILD) layer around the at least one metal gate;removing part of the ILD layer to form a plurality of contact holes exposing the source/drain region and the CESL;forming a first metal layer and a second metal layer in the contact holes, wherein the first metal layer contacts the CESL directly;performing a first thermal treatment process after forming the first metal layer and the second metal layer; andperforming a second thermal treatment process.2. The method of claim 1 , further comprising:forming a fin-shaped structure on the substrate; andforming the at least one metal gate on the fin-shaped structure.3. The method of claim 1 , wherein the first thermal treatment process comprises a soak anneal process claim 1 , and the second thermal treatment process comprises a spike anneal process.4. The method of claim 1 , wherein the temperature of the first thermal treatment process is between 500° C. to 600° C.5. The method of claim 1 , wherein the temperature of the second thermal treatment process is between 600° C. to 950° C.6. The method of claim 1 , wherein the duration of the first thermal treatment process is between 10 seconds to 60 ...

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Номер записи: 24
19-01-2017 дата публикации

GROWTH METHOD OF DENDRITIC CRYSTAL STRUCTURE THAT PROVIDES DIRECTIONAL HEAT TRANSFER

Номер: US20170016131A1
Автор: WANG Jenn-Shing, WANG Yu-Ching, WU Jia-Yu
Принадлежит:

A growth method of dendritic crystal structure that provides directional heat transfer, including the steps: A. providing a substrate, whereby the substrate is provided with a plurality of crystal defects; B. depositing a plurality of metal ions on the substrate using a deposition method, whereby the metal ions on the crystal defects enable the growth of dendritic crystals. Moreover, an interspace is provided between each of the dendritic crystals. Hence, when the substrate is in contact with a heat source, heat energy is transferred from the substrate in the growth direction of the dendritic crystals; or, when the dendritic crystals are disposed at the position of a heat source, heat provided by the heat source is transferred from the dendritic crystals in a direction toward the substrate. Accordingly, the fractal structure of the dendritic crystals is used to provide ample heat dissipation areas and contact areas. 1. A growth method of dendritic crystal structure that provides directional heat transfer , comprising the following steps:a) providing a substrate, whereby the substrate is provided with a plurality of crystal defects separated at intervals;b) depositing a plurality of metal ions on the substrate using a deposition method, whereby the metal ions on the crystal defects enable the growth of dendritic crystals, and an interspace is provided between each of the dendritic crystals.2. The growth method of dendritic crystal structure that provides directional heat transfer according to claim 1 , wherein in step (a) claim 1 , processing is carried out on the substrate to form the crystal defects.3. The growth method of dendritic crystal structure that provides directional heat transfer according to claim 2 , wherein the processing includes a cutting process.4. The growth method of dendritic crystal structure that provides directional heat transfer according to claim 1 , wherein in step (a) claim 1 , the substrate is plated with a whisker layer claim 1 , and ...

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Номер записи: 25
17-01-2019 дата публикации

HARDENING FILM AND METHOD OF MANUFACTURING THE SAME, FLEXIBLE AMOLED DISPLAY DEVICE

Номер: US20190019986A1
Автор: Wu Jia-Shu
Принадлежит:

The present disclosure discloses a hardening film which includes a substrate film layer and a hardening film layer on the substrate film layer, wherein a micro stereo structure layer including a plurality of micro stereo structures is disposed between the substrate film layer and the hardening film layer. A method of manufacturing the abovementioned hardening film includes: providing a substrate film layer; forming a micro stereo structure layer on the substrate film layer using a printing process or a photolithography process; and forming a hardening film layer on the micro stereo structure layer. The present disclosure also discloses a flexible AMOLED display device containing the abovementioned hardening film. 1. A hardening film , comprising a substrate film layer and a hardening film layer on the substrate film layer , wherein a micro stereo structure layer comprising a plurality of micro stereo structures is disposed between the substrate film layer and the hardening film layer.2. The hardening film of claim 1 , wherein the micro stereo structure is a hollow stereo structure having a section of a polygonal claim 1 , a circular claim 1 , an elliptical or an irregular shape.3. The hardening film of claim 1 , wherein the micro stereo structure is a solid stereo structure having a section of a polygonal claim 1 , a circular claim 1 , an elliptical or an irregular shape.4. The hardening film of claim 1 , wherein a thickness of the micro stereo structure layer is 1-5 μm.5. The hardening film of claim 1 , wherein a material of the micro stereo structure layer is an optical resin.6. The hardening film of claim 1 , wherein a thickness of the substrate film layer is 10-250 μm claim 1 , and a thickness of the hardening film layer is 10-100 μm.7. A method of manufacturing the hardening film claim 1 , comprising:providing a substrate film layer;forming a micro stereo structure layer including a plurality of micro stereo structures on the substrate film layer using a ...

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Номер записи: 26
28-01-2016 дата публикации

ROUTER AND RESOURCE ASSIGNMENT METHOD THEREOF

Номер: US20160029284A1
Автор: CHO CHIEN-I, LIU I-Hsun, TING Yi-Ting, WU Jia-Jiuan, YANG JIA-AO
Принадлежит:

The present invention provides a router including first and second wide-area network interfaces, at least one local area network interface, and a control unit. The local area network interface is electrically connected to at least one electronic device through at least one local area network. The control unit enables the electronic device to have at least one network service of the Internet through the first and the second wide-area network interfaces and the local area network interface, and assigns the network service to the first wide-area network interface or the second wide-area network interface according to at least one condition of the network service, wherein the condition includes at least one packet rate caused by the network service. 1. A router , comprising:a first wide-area network interface, arranged to connect to a first wide-area network, and connect to an Internet through the first wide-area network;a second wide-area network interface, arranged to connect to a second wide-area network, and connect to the Internet through the second wide-area network;at least one local area network interface, arranged to be electrically connected to at least one electronic device through at least one local area network; anda control unit, arranged to enable the electronic device to have at least one network service of the Internet through the first wide-area network interface, the second wide-area network interface and the local area network interface, and assign the at least one network service to the first wide-area network interface or the second wide-area network interface according to at least one condition of the network service, wherein the condition comprises a packet rate caused by the network service.2. The router as claimed in claim 1 , wherein the network serve is more than one claim 1 , and the control unit is further arranged to determine a plurality of service types of the corresponding network services according to a plurality of headers produced by ...

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Номер записи: 27
24-04-2014 дата публикации

METHOD FOR SYNTHESIS OF LARGE AREA THIN FILMS

Номер: US20140113074A1
Автор: Li Xuesong, Wu Jia-Hung
Принадлежит: BLUESTONE GLOBAL TECH LTD.

Improved methods for synthesizing large area thin films are disclosed, which result in films of enhanced width. The methods comprise providing a separator material which is rolled or wound up, along with the metallic foil substrate on which the thin film is to be deposited, to form a coiled composite which is then subjected to conventional chemical vapor deposition. Optionally, a winding tool may be used to aid in the rolling process. The methods enable a many-fold increase in the effective width of the substrate to be achieved. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. In a method for synthesizing a thin film using chemical vapor deposition , said method comprising the steps of heating a substantially flat substrate , forming a thin film on a surface of said substrate by exposing the substrate to chemical vapor deposition , and cooling the substrate to room temperature , the improvement comprising , prior to said heating step , providing a separator material , positioning said separator material adjacent to and in a substantially overlying relationship with said substrate to form a composite in which a layer of separator material is interleaved between adjacent layers of said substrate , and winding said composite so as to provide a coiled composite;wherein the thin film is selected from the group consisting of graphene and boron nitride.12. The method of wherein said separator material is comprised of a substance selected from the group consisting of fused quartz wool claim 11 , ceramic insulation and a silica fabric.13. The method of wherein said separator material is provided in the form of a substantially flat mat claim 12 , and wherein the thickness of said mat is in the range of from approximately 0.1 mm to approximately 2 mm.14. The method of wherein said separator material is comprised of fused quartz wool.15. The method of wherein the winding step is accomplished ...

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Номер записи: 28
23-01-2020 дата публикации

MEMBRANE ASSEMBLY, EXAMINATION CONTAINER AND ELECTRON MICROSCOPE

Номер: US20200027695A1
Автор: Chang Maochan, HUANG Tsu-Wei, LIU Shih-Yi, Wu Jia-Ling
Принадлежит:

An examination container includes a main body, a membrane assembly and a cover. The main body has an accommodating trough for holding sample. The membrane assembly covers an opening end of the accommodating trough. The membrane assembly includes a support body and a membrane. The support body has a first surface and a second surface, wherein the support body is flat and has a first through-hole penetrating through the first surface and the second surface. The membrane is arranged on the second surface side of the support body and has a second through-hole. The second through-hole is opposite to the first through-hole and allows a charged particle beam to pass the second through-hole. The cover is detachably connected to the main body to secure the membrane assembly. The membrane assembly is easy to replace and uses less consumables. An electron microscope using the abovementioned examination container is also disclosed.

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Номер записи: 29
05-02-2015 дата публикации

SYSTEMS, METHODS, AND MEDIA FOR CALIBRATING A DISPLAY DEVICE

Номер: US20150035993A1
Автор: Bhagavathula Jaya, James Geno, Wu Jia
Принадлежит: Sonic IP, Inc.

Methods, systems, and media for calibrating a display device are provided. In some embodiments, the methods comprise: causing a first test stream to be displayed on the display device; capturing, using a hardware processor, at least one screenshot of the first test stream displayed on the display device; detecting, using the hardware processor, a first test pattern in the screenshot; determining, using the hardware processor, whether the first test pattern contains a distortion; and generating, using the hardware processor, a set of instructions to calibrate the display device in response to determining that the first test pattern contains a distortion.

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Номер записи: 30
17-02-2022 дата публикации

LAYOUT PATTERN OF MAGNETORESISTIVE RANDOM ACCESS MEMORY

Номер: US20220052110A1
Автор: Chang I-Fan, Chen Hung-Yueh, Huang Rai-Min, Wang Yu-Ping, Wu Jia-Rong
Принадлежит:

A layout pattern of a magnetoresistive random access memory (MRAM) includes a first diffusion region and a second diffusion region extending along a first direction on a substrate, a first contact plug extending along a second direction from the first diffusion region to the second diffusion region on the substrate, a first gate pattern and a second gate pattern extending along the second direction adjacent to one side of the first contact plug, and a third gate pattern and a fourth gate pattern extending along the second direction adjacent to another side of the first contact plug. 1. A layout pattern of a magnetoresistive random access memory (MRAM) , comprising:a first diffusion region and a second diffusion region extending along a first direction on a substrate; anda first contact plug extending along a second direction from the first diffusion region to the second diffusion region on the substrate.2. The layout pattern of a MRAM of claim 1 , further comprising:a first gate pattern and a second gate pattern extending along the second direction adjacent to one side of the first contact plug; anda third gate pattern and a fourth gate pattern extending along the second direction adjacent to another side of the first contact plug.3. The layout pattern of a MRAM of claim 2 , further comprising:a first drain region between the first gate pattern and the second pattern on the first diffusion region;a first source region between the second gate pattern and the third gate pattern on the first diffusion region;a second drain region between the first gate pattern and the second pattern on the second diffusion region; anda second source region between the second gate pattern and the third gate pattern on the second diffusion region.4. The layout pattern of a MRAM of claim 3 , wherein the first contact plug is on the first source region and the second source region.5. The layout pattern of a MRAM of claim 3 , further comprising:a second contact plug on the first drain ...

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Номер записи: 31
16-02-2017 дата публикации

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING FORMING A DIELECTRIC LAYER AROUND A PATTERNED ETCH MASK

Номер: US20170047251A1
Автор: Chen Yi-Wei, Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Li Kun-Ju, Liu Ying-Cheng, Lo Wei-Cyuan, Wu Jia-Rong, Wu Yi-Kuan
Принадлежит:

A method of manufacturing a semiconductor device includes: providing a semiconductor having active regions; depositing a dielectric layer on the semiconductor; forming a patterned etch mask on the dielectric layer; depositing a further dielectric layer on the dielectric layer and the patterned etch mask; planarizing the further dielectric layer until the patterned etch mask is exposed; and forming a further patterned etch mask having an opening on the further dielectric layer so that portions of the patterned etch mask are exposed from the opening. 1. A method of manufacturing a semiconductor device , comprising:providing a semiconductor;depositing a dielectric layer on the semiconductor;forming a patterned etch mask on the dielectric layer;depositing a further dielectric layer on the dielectric layer and the patterned etch mask so that an entire top surface of the further dielectric layer is higher than any part of a top surface of the patterned etch mask, wherein the further dielectric layer is in direct physical contact with the dielectric layer and the patterned etch mask;planarizing the further dielectric layer until the patterned etch mask is exposed; andforming a further patterned etch mask having an opening on the further dielectric layer, wherein portions of the patterned etch mask are exposed from the opening.2. The method of claim 1 , wherein a composition of the dielectric layer is the same as a composition of the further dielectric layer.3. The method of claim 1 , wherein the patterned etch mask is made of metal claim 1 , alloy or ceramic material.4. The method of claim 3 , wherein the patterned etch mask is TiN.5. The method of claim 1 , wherein the further dielectric layer has a flat top surface before the step of forming the further patterned etch mask.6. The method of claim 1 , wherein the step of forming the further patterned etch mask comprises:coating an organic dielectric layer on the further dielectric layer;forming a patterned photoresist on ...

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Номер записи: 32
08-05-2014 дата публикации

PROXIMITY SENSING METHOD, PROXIMITY SENSING APPARATUS AND MOBILE PLATFORM USING THE SAME

Номер: US20140129029A1
Автор: Li Po-Yi, Liu Chun-Hsien, Tsai Ya-Hui, Wu Jia-Hsing
Принадлежит: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

A proximity sensing apparatus is provided. The proximity sensing apparatus includes an encoded signal transmission unit, an interference signal transmission unit and a reception unit. The encoded signal transmission unit transmits an encoded signal, and the interference signal transmission unit transmits an interference signal. The interference signal interferes with the encoded signal to generate an interfered signal. The reception unit receives a sensing signal and outputs the sensing signal to a signal processing unit. The sensing signal is either the interfered signal or the encoded signal. The signal processing unit is electrically connected to the reception unit, and determines whether the sensing signal matches the encoded signal. The signal processing unit further outputs a proximity signal when the sensing signal does not match the encoded signal. 1. A proximity sensing apparatus , comprising:an encoded signal transmission unit, for transmitting an encoded signal;an interference signal transmission unit, for transmitting an interference signal; the interference signal interfering with the encoded signal to generate an interfered signal; anda reception unit, for receiving a sensing signal and transmitting the sensing signal to a signal processing unit electrically connected to the reception unit; the sensing signal being either the interfered signal or the encoded signal;wherein, the signal processing unit determines whether the sensing signal matches the encoded signal, and outputs a proximity signal when the sensing signal does not match the encoded signal.2. The proximity sensing apparatus according to claim 1 , wherein the reception unit is disposed between the encoded signal transmission unit and the interference signal transmission unit.3. The proximity sensing apparatus according to claim 1 , further comprising:a partition plate, located between the interference signal transmission unit and the reception unit.4. The proximity sensing apparatus ...

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Номер записи: 33
22-02-2018 дата публикации

DISPLAY DEVICE

Номер: US20180053461A1
Автор: Liao Chien-Huang, Tien Kun-Cheng, WU Jia-Long, Yu Ti-Kuei
Принадлежит:

A display device includes a plurality of first color sub-pixel columns, a plurality of second color sub-pixel columns, a plurality of third color sub-pixel columns, a plurality of gate lines, a plurality of data lines, a gate driver, and a data driver. Each sub-pixel column includes a first type sub-pixel and a second type sub-pixel. Any two adjacent sub-pixels in a same column are electrically connected to different data lines. When grey levels of display data are the same, the data driver provides a first sub-pixel voltage and a second sub-pixel voltage to the first type sub-pixel and the second type sub-pixel respectively. The first sub-pixel voltage is different from the second sub-pixel voltage. 1. A display device , comprising:a first column with a plurality of first color sub-pixels;a second column with a plurality of second color sub-pixels;a third column with a plurality of third color sub-pixels;a plurality of gate lines, for outputting scanning signals to said plurality of first color sub-pixels, said plurality of second color sub-pixels, and said plurality of third color sub-pixels;a plurality of data lines, for receiving display data and output pixel voltages to said plurality of first color sub-pixels, said plurality of second color sub-pixels, and said plurality of third color sub-pixels;a gate driver, electrically coupled to the gate lines for driving said plurality of first color sub-pixels, said plurality of second color sub-pixels, and said plurality of third color sub-pixels; anda data driver, electrically coupled to the data lines for providing data signals for said plurality of first color sub-pixels, said plurality of second color sub-pixels, and said plurality of third color sub-pixels;wherein each of said first color sub-pixels, second color sub-pixels, and third color sub-pixels is a first type or a second type;wherein any two adjacent first color sub-pixels are electrically connected to a first data line and a second data line separately; ...

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Номер записи: 34
21-02-2019 дата публикации

Release Aid

Номер: US20190055695A1
Автор: Wu Jia, Zhang Xiao, ZHAO Yulin
Принадлежит: ECOLAB USA INC.

The present invention relates to a release aid that includes at least one succinic anhydride derivative for use in a papermaking process. For example, the release aid of the present invention is particularly useful for use in a paperweb creping process. The present invention also relates to a paperweb creping method that includes a release aid comprising at least one succinic anhydride. 2. The release aid of claim 1 , wherein R is an alkyl moiety or an alkenyl moiety having from 10 to 22 carbon atoms.3. The release aid of claim 1 , wherein R is an alkyl moiety or an alkenyl moiety having from 15 to 20 carbon atoms.4. The release aid of claim 1 , wherein the succinic anhydride derivative is selected from monosalts or disalts formed by the succinic anhydrides of formula I or II and monovalent or divalent cations.5. The release aid of claim 4 , wherein the succinic anhydride derivative is a disalt.6. The release aid of claim 4 , wherein the monovalent or divalent cations are selected from Na claim 4 , K claim 4 , NH claim 4 , Mg claim 4 , and Ca.7. The release aid of claim 6 , wherein the monovalent or divalent cations are selected from Na claim 6 , Kand NH.8. The release aid of claim 1 , wherein the succinic anhydride derivative is lauryl succinic acid claim 1 , lauryl succinic anhydride claim 1 , pentadecyl succinic acid claim 1 , pentadecyl succinic anhydride claim 1 , hexadecyl succinic acid claim 1 , hexadecyl succinic anhydride claim 1 , hexadecenyl succinic acid claim 1 , hexadecenyl succinic anhydride claim 1 , octadecyl succinic acid claim 1 , octadecyl succinic anhydride claim 1 , octadecenyl succinic acid claim 1 , octadecenyl succinic anhydride claim 1 , dipotassium hexadecyl succinate claim 1 , disodium hexadecyl succinate claim 1 , dipotassium octadecyl succinate claim 1 , disodium octadecyl succinate claim 1 , dipotassium hexadecenyl succinate claim 1 , disodium hexadecenyl succinate claim 1 , dipotassium octadecenyl succinate claim 1 , disodium ...

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Номер записи: 35
03-03-2016 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Номер: US20160064327A1
Автор: CHANG Tsung-Hung, Chen Yi-Wei, Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Lin Ching-Ling, Wu Jia-Rong
Принадлежит:

A semiconductor device is disclosed. The semiconductor device includes: a substrate; a first metal gate on the substrate; a first hard mask on the first metal gate; an interlayer dielectric (ILD) layer on top of and around the first metal gate; and a patterned metal layer embedded in the ILD layer, in which the top surface of the patterned metal layer is lower than the top surface of the first hard mask. 1. A method for fabricating semiconductor device , comprising:providing a substrate, wherein the substrate comprises a first metal gate and a second metal gate thereon, a first hard mask on the first metal gate and a second hard mask on the second metal gate, and a first interlayer dielectric (ILD) layer around the first metal gate and the second metal gate;utilizing the first hard mask and the second hard mask as mask to remove part of the first ILD layer for forming a recess; andforming a patterned metal layer in the recess, wherein the top surface of the patterned metal layer is lower than the top surfaces of the first hard mask and the second hard mask.2. The method of claim 1 , further comprising:forming a metal layer on the first hard mask, the second hard mask, and the first ILD layer;forming a dielectric stack on the metal layer;patterning the dielectric stack and the metal layer to form a patterned dielectric stack and the patterned metal layer in the recess;forming a second ILD layer on the first hard mask, the second hard mask, the first ILD layer, the patterned dielectric stack and the patterned metal layer;forming a first contact plug in the second ILD layer and the first ILD layer for electrically connecting to a source/drain region adjacent to the first metal gate; andforming a second contact plug in the second ILD layer for electrically connecting to the patterned metal layer and forming a third contact plug in the second ILD layer for electrically connecting to the second metal gate.3. The method of claim 2 , wherein the step of patterning the ...

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Номер записи: 36
04-03-2021 дата публикации

CACHE LINE CLEANUP FOR PREVENTION OF SIDE CHANNEL ATTACK

Номер: US20210064744A1
Автор: HAO QING FENG, Shi Dong Jia, Wu Jia, Zhang Jing EF, Zhao Yi Min YM
Принадлежит:

Examples of techniques for cache line cleanup for prevention of side channel attack are described herein. An aspect includes determining, by a rollback control unit, a start of a speculative execution in a computer processor. Another aspect includes setting a field in a speculative buffer of the computer processor based on a load or a store to a cache line of a cache being performed by the speculative execution. Another aspect includes determining a failure of the speculative execution. Another aspect includes, based on the failure of the speculative execution, traversing the speculative buffer to determine the set field and performing a cleanup of the cache line based on the set field in the speculative buffer. 1. A computer processor comprising:a cache;a speculative buffer; and determine a start of a speculative execution in the computer processor;', 'set a field in the speculative buffer based on a load or a store to a cache line of the cache being performed by the speculative execution;', 'determine a failure of the speculative execution; and', traverse the speculative buffer to determine the set field; and', 'perform a cleanup of the cache line based on the set field in the speculative buffer., 'based on the failure of the speculative execution], 'a rollback control unit, the rollback control unit configured to2. The computer processor of claim 1 , wherein the cache comprises a level 1 (L1) data cache claim 1 , and wherein the cleanup comprises:invalidating data in the cache line of the L1 cache that is indicated by the set field in the speculative buffer;writing the invalidated data back to a level 2 (L2) cache; andclearing the field in the speculative buffer.3. The computer processor of claim 1 , further comprising a speculative execution level counter claim 1 , the rollback control unit further configured to:increment the speculative execution level counter based on determining the start of the speculative execution; anddecrement the speculative execution ...

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Номер записи: 37
02-03-2017 дата публикации

SEMICONDUCTOR DEVICES HAVING METAL GATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING METAL GATE

Номер: US20170062282A1
Автор: Chen Yi-Wei, Feng Li-Wei, Hsu Chih-Kai, Huang Chih-Sen, Hung Ching-Wen, Jenq Jyh-Shyang, LEE Yi-Hui, Lin Chao-Hung, LIN CHIEN-TING, Liu Ying-Cheng, Tsai Shih-Hung, Wu Jia-Rong, Wu Yi-Kuan
Принадлежит:

A method for manufacturing semiconductor devices having metal gate includes follow steps. A substrate including a plurality of isolation structures is provided. A first nFET device and a second nFET device are formed on the substrate. The first nFET device includes a first gate trench and the second nFET includes a second gate trench. A third bottom barrier layer is formed in the first gate trench and a third p-work function metal layer is formed in the second gate trench, simultaneously. The third bottom barrier layer and the third p-work function metal layer include a same material. An n-work function metal layer is formed in the first gate trench and the second gate trench. The n-work function metal layer in the first gate trench directly contacts the third bottom barrier layer, and the n-work function metal layer in the second gate trench directly contacts the third p-work function metal layer. 1. A method for manufacturing semiconductor devices having metal gate , comprising:providing a substrate comprising a plurality of isolation structures formed therein, and a first nFET device and a second nFET device being formed on the substrate, the first nFET device comprising a first gate trench and the second nFET comprising a second gate trench;simultaneously forming a third bottom barrier layer in the first gate trench and a third p-work function metal layer in the second gate trench, the third bottom barrier layer and the third p-work function metal layer comprising a same material; andforming an n-work function metal layer in the first gate trench and the second gate trench, the n-work function metal layer in the first gate trench directly contacting the third bottom barrier layer and the n-work function metal layer in the second gate trench directly contacting the third p-work function metal layer.2. The method for manufacturing the semiconductor devices having metal gate according to claim 1 , wherein the third bottom barrier layer and the third p-work function ...

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Номер записи: 38
08-03-2018 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Номер: US20180068951A1
Автор: Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Liu Ying-Cheng, Wu Jia-Rong
Принадлежит:

A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a first gate structure is formed on the substrate, a first spacer is formed around the first gate structure, and an interlayer dielectric (ILD) layer is formed around the first spacer. Next, a first etching process is performed to remove part of the ILD layer for forming a recess, a second etching process is performed to remove part of the first spacer for expanding the recess, and a contact plug is formed in the recess. 1. A method for fabricating semiconductor device , comprising:providing a substrate;forming a first gate structure on the substrate, a first spacer around the first gate structure, and an interlayer dielectric (ILD) layer around the first spacer;performing a first etching process to remove part of the ILD layer for forming a recess;performing a second etching process to remove part of the first spacer for expanding the recess; andforming a contact plug in the recess.2. The method of claim 1 , further comprising:forming a second gate structure on the substrate, a second spacer around the second gate structure, and the ILD layer around the first spacer and the second spacer;performing the first etching process to remove part of the ILD layer between the first gate structure and the second gate structure;performing the second etching process to remove part of the first spacer and part of the second spacer; andforming the contact plug.3. The method of claim 2 , further comprising:forming a contact etch stop layer (CESL) on the first spacer and the second spacer before forming the ILD layer;performing the first etching process;performing the second etching process to remove part of the CESL, part of the first spacer, and part of the second spacer; andforming the contact plug.4. The method of claim 2 , further comprising:forming a first hard mask on the first gate structure and a second hard mask on the second gate structure, wherein the top surfaces of the first ...

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Номер записи: 39
17-03-2016 дата публикации

COLLAPSIBLE STAND

Номер: US20160076692A1
Автор: Sun Wei Nien, Tsai Sheng Wei, Wu Jia Qi
Принадлежит:

A collapsible stand has a first member and a second member. The first member has a containment portion and an engaging portion, a circumference of the containment portion further has a first connecting portion, the second member has an accepting portion and a slot, a circumference of the second member further has a second connecting portion, and the second member engages with the engaging portion of the first member. 1. A collapsible stand comprising a first member and a second member , characterized in that:the first member has a containment portion and an engaging portion, a circumference of the containment portion further comprising a first connecting portion, andthe second member has an accepting portion and a slot, a circumference of the second member further comprising a second connecting portion,wherein the second member engages with the engaging portion of the first member.2. The collapsible stand as claimed in claim 1 , wherein the first connecting portion and the second connecting portion of the first member and the second member have corresponding inclined surfaces.3. The collapsible stand as claimed in claim 1 , wherein the first connecting portion and the second connecting portion of the first member and the second member have corresponding threaded surfaces.4. The collapsible stand as claimed in claim 1 , wherein the first connecting portion and the second connecting portion of the first member and the second member have corresponding paired female and male surfaces.5. The collapsible stand as claimed in claim 1 , wherein the first member and the second member further comprise corresponding paired female and male portions.6. The collapsible stand as claimed in claim 1 , wherein the accepting portion of the second member comprises an adhered or printed design or is hollowed out with a design.7. The collapsible stand as claimed in claim 1 , wherein the first member comprises an adhered or printed design or is hollowed out with a design. 1. Field of the ...

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Номер записи: 40
19-03-2015 дата публикации

Modular, Scalable, Multi-Function, Power Quality System For Utility Networks

Номер: US20150081131A1
Автор: Patel Naimish, Simonelli James, Wu Jia
Принадлежит: Gridco Inc.

A modular, scalable, multi-function, power quality system for utility networks includes a configurable frame coupled to an electrical input and an electrical output. A plurality of functional slots each including a receiving connector are coupled to the frame. One or more unique function subsystems are coupled to selected functional slots. Each unique function subsystem includes one or more electrical components coupled to the receiving connector of selected functional slots configured to define functional capability associated with the one or more functional slots. A plurality of identical power modules are disposed in selected functional slots of each of the one or more unique function subsystems. A controller coupled to each of the power modules is configured to enable the power modules in predetermined functional slots of the one or more unique subsystems to perform a predetermined function associated with the electrical input or the electrical output. 1. A modular , scalable , multi-function , power quality system for utility networks , the system comprising:a configurable frame coupled to an electrical input and an electrical output;a plurality of functional slots each including a receiving connector coupled to the frame;one or more unique function subsystems coupled to selected functional slots, each unique function subsystem including one or more electrical components coupled to the receiving connector of selected functional slots configured to define functional capability associated with the one or more functional slots;a plurality of identical power modules disposed in selected functional slots of each of the one or more unique function subsystems; anda controller coupled to each of the power modules configured to enable the power modules in predetermined functional slots of the one or more unique subsystems to perform a predetermined function associated with the electrical input or the electrical output.2. The system of in which at least one of the unique ...

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Номер записи: 41
14-03-2019 дата публикации

OCCLUSION DETECTION FOR FACIAL RECOGNITION PROCESSES

Номер: US20190080149A1
Автор: Fasel Ian R., Gernoth Thorsten, Tajbakhsh Touraj, Wu Jia-Chi
Принадлежит:

Occlusion of facial features may be detected and assessed in an image captured by a camera on a device. Landmark heat maps may be used to estimate the location of landmarks such as the eyes, mouth, and nose of a user's face in the captured image. An occlusion heat map may also be generated for the captured image. The occlusion heat map may include values representing the amount of occlusion in regions of the face. The estimated locations of the eyes, mouth, and nose may be used in combination with the occlusion heat map to assess occlusion scores for the landmarks. The occlusion scores for the landmarks may be used control one or more operations of the device. 1. A method , comprising:capturing an image of a user's face using a camera located on a device, the device comprising a computer processor and a memory, wherein the captured image comprises an image captured while illuminating the user's face with an illuminator located on the device;identifying, using the computer processor, a location of one or more landmark features on the face in the captured image;generating, using the computer processor, an occlusion map of the face, wherein the occlusion map is generated by assessing occlusion of the face in a plurality of regions in a grid representation of the face;assessing, using the computer processor, an occlusion score for at least one of the landmark features on the face in the captured image based on the identified location of the landmark feature in combination with the occlusion map of the face; anddiscarding the captured image if the assessed occlusion score is above a selected occlusion threshold.2. The method of claim 1 , further comprising controlling claim 1 , using the computer processor claim 1 , an operation of the device based on the assessed occlusion score.3. The method of claim 1 , wherein discarding the captured image comprises discarding the captured image from an enrollment process if the assessed occlusion score is above the selected ...

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Номер записи: 42
14-03-2019 дата публикации

Examination container and electron microscope

Номер: US20190080881A1
Автор: Jia-Ling Wu, Maochan Chang, Shih-Yi LIU, Tsu-Wei Huang
Принадлежит: Taiwan Electron Microscope Instrument Corp

An examination container includes a main body, a cover and a carrier stage. The main body has an accommodating trough for holding a sample. The cover is detachably connected to the main body to close the accommodating trough. The cover has a first through-hole penetrating through an outer surface and an inner surface of the cover, and includes a membrane arranging on the inner surface of the cover. The membrane has a second through-hole opposite to the first through-hole for passing a charged particle beam through the first through hole and the second through hole. The carrier stage is installed in a position corresponding to the second through-hole. The carrier stage is detachably arranged in the accommodating trough for a variety of examination purposes. An electron microscope using the abovementioned examination container is also disclosed.

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Номер записи: 43
19-06-2014 дата публикации

FLAT HEAT PIPE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20140166244A1
Автор: DAI SHENG-LIANG, WU JIA-HONG
Принадлежит:

An exemplary flat heat pipe includes a hollow tube and a wick structure lining an inner surface of the tube. The tube includes an evaporator section, an adiabatic section and a condenser section defined in turn along a longitudinal direction thereof. The wick structure includes a first wick portion located in the evaporator section, a second wick portion located in the condenser section, and a third wick portion extending longitudinally from the evaporator section, through the adiabatic section to the condenser section and communicating with the first wick portion and the second wick portion. A capillary force of the first wick portion is larger than that of the third wick portion, and a pore density of the first wick portion is less than that of the third wick portion. 1. A flat heat pipe for removing heat from a heat-generating component in thermal contact therewith , the flat heat pipe comprising:a hollow tube comprising an evaporator section, an adiabatic section and a condenser section defined in turn along a longitudinal direction thereof; anda wick structure lining an inner surface of the tube, the wick structure comprising a first wick portion located in the evaporator section, a second wick portion located in the condenser section, and a third wick portion extending longitudinally from the evaporator section, through the adiabatic section to the condenser section and communicating with the first wick portion and the second wick portion;wherein a capillary force of the first wick portion is larger than that of the third wick portion, and a pore density of the first wick portion is less than that of the third wick portion.2. The flat heat pipe of claim 1 , wherein a capillary force of the second wick portion is larger than that of the third wick portion and less than that of the first wick portion claim 1 , and a pore density of the second wick portion is larger than that of the first wick portion and less than that of the third wick portion.3. The flat heat ...

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Номер записи: 44
19-06-2014 дата публикации

HEAT PIPE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20140166246A1
Автор: DAI SHENG-LIANG, WU JIA-HONG
Принадлежит:

A method for manufacturing a heat pipe includes following steps: providing a tube; providing a rod; inserting the rod in the circular tube, a receiving portion is formed between an inner face of the tube and the upper portion of the rod; providing an amount of metal powder and filling the metal powder into the receiving portion; sintering the metal powder at a high temperature to form a first wick structure adhered on the inner face of the tube and then drawing the rod out of the tube; injecting a working medium into the tube and sealing the tube to form the heat pipe. 1. A method for manufacturing a heat pipe comprising following steps:providing an elongated circular tube;providing an elongated rod, the rod comprising an upper portion and a lower portion, a cross section of each of the upper portion and the lower portion being semicircular, the upper portion having a radius less than that of the lower portion, the radius of the lower portion being equal to an inner radius of the circular tube;inserting the rod in the circular tube, a receiving portion being formed between an inner face of the tube and the upper portion of the rod;providing an amount of metal powder and filling the metal powder into the receiving portion;sintering the metal powder at a temperature to form a first wick structure adhered on the inner face of the tube and then drawing the rod out of the tube; andinjecting a working medium into the tube and sealing the tube to thereby form the heat pipe.2. The method for manufacturing the heat pipe of claim 1 , wherein before the rod is inserted in the circular tube claim 1 , a nitrogen compound thin film is formed on an outer surface of the rod by performing high temperature surface treatment on the outer surface of the rod in nitrogen atmosphere claim 1 , and an organic mold-release agent is sprayed over the outer surface of the rod.3. The method for manufacturing the heat pipe of claim 1 , wherein a transverse cross section of the receiving portion ...

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Номер записи: 45
24-03-2016 дата публикации

ELECTRONIC DEVICE AND HEAT DISSIPATING CASING THEREOF

Номер: US20160088762A1
Автор: DAI SHENG-LIANG, WU JIA-HONG
Принадлежит:

An electronic device includes an electronic component and a heat dissipating casing configured to dissipate heat from the electronic component. The casing includes top and bottom sides of the heat dissipating casing forming a sealed chamber, and a pore structure formed within the sealed chamber. The sealed chamber is configured to receive a working medium and the pore structure is configured to absorb at least a portion of the working medium, whereby the heat generated from the electronic component is dissipated by a phase change of the working medium. 1. A heat dissipating casing configured to dissipate heat from an electronic component , the casing comprising:top and bottom sides of the heat dissipating casing forming a sealed chamber; anda pore structure formed within the sealed chamber;wherein the sealed chamber is configured to receive a working medium and the pore structure is configured to absorb at least a portion of the working medium, whereby the heat generated from the electronic component is dissipated by a phase change of the working medium.2. The heat dissipating casing of claim 1 , further comprising a top plate and a bottom plate claim 1 , the pore structure and the working medium being sandwiched between the top plate and the bottom plate.3. The heat dissipating casing of claim 2 , wherein the pore structure is fixed on an inner face of the top plate claim 2 , the electronic component being fixed on an outer face of the top plate claim 2 , the pore structure comprising a main portion adhered on the whole inner face of the top plate and a plurality of convex portions extending downwards from the main portion and contacting the bottom plate claim 2 , a channel being formed between every two adjacent convex portions for flow of the working medium.4. The heat dissipating casing of claim 1 , further comprising a top plate claim 1 , a bottom plate and a sealed shell claim 1 , each of the top plate and the bottom plate defining a groove claim 1 , the ...

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Номер записи: 46
31-03-2016 дата публикации

VARIABLE-COLOR ACCESSORY AND VARIABLE-COLOR DEVICE APPLIED THERETO

Номер: US20160091195A1
Автор: Sung Chun-yung, Wu Jia-Hung
Принадлежит:

A variable-color accessory is provided comprising: a plurality of accessory surfaces, a light-emitting plate, a light-scattering plate, and a control unit. The light-emitting plate is mounted inside one of the accessory surfaces, where the light-emitting plate is flexible, is bent consistently with one of the accessory surfaces, and has a plurality of light-emitting diodes for emitting different light colors. The light-scattering plate is disposed between the light-emitting plate and one of the accessory surfaces, where the light-scattering plate is flexible and transmits light. The control unit is electrically connected to the light-emitting plate, to control turn-on/off of the light-emitting diodes of the light-emitting plate. A variable-color device applied to the accessory is further provided. 1. A variable-color accessory , comprising:a plurality of accessory surfaces, wherein the accessory surfaces are flexible;a light-emitting plate, disposed inside at least one of the accessory surfaces, wherein the light-emitting plate is flexible, is bent consistent with the corresponding accessory surface, and has a plurality of light-emitting diodes for emitting different light colors;a light-scattering plate, disposed between the light-emitting plate and the corresponding accessory surface, wherein the light-scattering plate is flexible and light-transmitting; anda control unit, electrically connected to the light-emitting plate to control on/off and illumination intensity of the light-emitting diodes of the light-emitting plate.2. The variable-color accessory of claim 1 , wherein one surface of the light-scattering plate is bonded with the light-emitting plate and the other surface of the light-scattering plate is bonded with the corresponding accessory surface.3. The variable-color accessory of claim 1 , wherein the light-scattering plate is made of expanded polyethylene claim 1 , polyethylene foam claim 1 , expanded polypropylene claim 1 , or an ethylene-vinyl ...

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Номер записи: 47
19-03-2020 дата публикации

METHODS FOR LOCKING AND/OR UNLOCKING ELECTRIC VEHICLE AND ASSOCIATED APPARATUS

Номер: US20200086829A1
Автор: Chen Ching, Hsu Chun-Sheng, LAI Ming-Hsiang, Wall Kenneth Edward, Wu Jia-Yang
Принадлежит:

The present disclosure relates to apparatus and methods for locking and/or unlocking a vehicle based on a location of a mobile device associated with the vehicle. In one embodiment a processor in a vehicle analyzes a position of a mobile device relative to the vehicle and allows the vehicle to be unlocked when the mobile device is determined to be approaching the vehicle. 1. A method for controlling a vehicle , comprising:receiving a wireless signal from a mobile device;analyzing at least one characteristic of the wireless signal to determine a current location of the mobile device;unlocking the vehicle in response to a determination, based on the current location, that the mobile device is within an inner boundary adjacent to the vehicle, and that a first signal is received from a first input/output (I/O) component of the vehicle; andlocking the vehicle in response to a determination, based on the current location, that the mobile device is external to an outer boundary external to the inner boundary.2. The method of claim 1 , wherein the first I/O component comprises a physical button claim 1 , a touch screen claim 1 , or a brake lever.3. The method of claim 1 , further comprising determining the inner boundary and the outer boundary based on a user configuration.4. The method of claim 1 , wherein the at least one characteristic of the wireless signal includes a signal strength and a distance between the mobile device and the vehicle.5. The method of claim 1 , further comprising claim 1 , in response to the determination that the mobile device moves across the inner boundary toward the vehicle claim 1 , turning on a display of the vehicle powered by a battery of the vehicle.6. The method of claim 1 , further comprising claim 1 , enabling the engine of the vehicle to be turned on by receiving the first signal from the first I/O component and receiving a second signal from a second I/O component of the vehicle prior to receiving the first signal claim 1 , wherein ...

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Номер записи: 48
30-03-2017 дата публикации

SCALABLE CODE DIVISION AND WORKFLOW CHART

Номер: US20170090919A1
Автор: Liu He, Shi DaFei, Wu Jia Sen, Zhang Bao
Принадлежит:

Generating a scalable code division and workflow chart. Based on definition-and-use cases of variables in a code snippet to be represented by a graph, crossing references to the variables in the code are determined, where a crossing reference associated with a statement involves a definition of the variable before the statement and a use of the variable at or after the statement. The code snippet is divided, based on the crossing references. 1. A computer-implemented method comprising:obtaining, by a computer, a definition-and-use case of a variable in a code snippet, the code snippet including a plurality of statements;determining, by the computer, crossing references associated with at least some of the plurality of statements based on the definition-and-use case of the variable, a crossing reference associated with a statement involving a definition of the variable before the statement and a use of the variable at or after the statement; anddividing, by the computer, the code snippet, based on the determined crossing references.2. The method of claim 1 , wherein obtaining the definition-and-use case of the variable comprises:generating a use-definition (UD) chain of the variable, the UD chain including a use of the variable and each definition of the variable that reaches the use of the variable without an intervening definition.3. The method of claim 1 , wherein obtaining the definition-and-use case of the variable comprises:determining a syntactic structure of the plurality of statements included in the code snippet; andobtaining the definition-and-use case of the variable from the syntactic structure.4. The method of claim 1 , wherein dividing the code snippet comprises:selecting a statement from among the plurality of statements, a count of the crossing references associated with selected statement being low; anddetermining a position immediately after the selected statement as a candidate division point for the dividing.5. The method of claim 1 , further ...

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Номер записи: 49
09-04-2015 дата публикации

SHALLOW TRENCH ISOLATION

Номер: US20150097248A1
Автор: Liang Chia-Jui, Liou En-Chiuan, Tsao Po-Chao, Wu Jia-Rong
Принадлежит:

The semiconductor structure includes a plurality of first insulators in a substrate, a common insulating layer surrounding the sidewall and the bottom of said first insulators in said substrate, and suspended portions of said substrate on said common insulating layer. 1. A semiconductor structure , comprising:a plurality of first insulators in a substrate;a common insulating layer surrounding the sidewall and the bottom of said first insulators in said substrate; andsuspended portions of said substrate on said common insulating layer.2. The semiconductor structure according to claim 1 , wherein said suspended portions of said substrate are between each of said first insulators on said common insulating layer.3. The semiconductor structure according to claim 1 , further comprising a second insulator on each of said first insulators and a buffer layer on the sidewall and the bottom of each said second insulator claim 1 , wherein a part of said buffer layer interfaces between said first insulator and said second insulator.4. The semiconductor structure according to claim 3 , wherein the outer sidewall of said buffer layer and the sidewall of said first insulator are leveled.5. The semiconductor structure according to claim 1 , wherein the material of said first insulator and said second insulator is silicon oxide.6. The semiconductor structure according to claim 1 , wherein the material of said buffer layer comprises stress buffer film claim 1 , silicon nitride claim 1 , or silicon carbonitride.7. The semiconductor structure according to claim 1 , wherein said suspended portions of said substrate are fin structures for fin field effect transistors.8. The semiconductor structure according to claim 7 , wherein said first insulators and said common insulating layer serve as isolating structures between said fin structures.9. The semiconductor structure according to claim 7 , further comprising a High-k material layer on said fin structures.10. The semiconductor structure ...

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Номер записи: 50
06-04-2017 дата публикации

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Номер: US20170098707A1
Автор: Chen Yi-Wei, Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Liu Ying-Cheng, Wu Jia-Rong, Wu Yi-Kuan
Принадлежит:

A manufacturing method of a semiconductor structure includes the following steps. An epitaxial region is formed in a semiconductor substrate. A dielectric layer is formed on the epitaxial region, and a contact hole is formed in the dielectric layer. The contact hole exposes a part of the epitaxial region, and an oxide-containing layer is formed on the epitaxial region exposed by the contact hole. A contact structure is formed in the contact hole and on the oxide-containing layer. The oxide-containing layer is located between the contact structure and the epitaxial region. A semiconductor structure includes the semiconductor substrate, at least one epitaxial region, the contact structure, the oxide-containing layer, and a silicide layer. The contact structure is disposed on the epitaxial region. The oxide-containing layer is disposed between the epitaxial region and the contact structure. The silicide layer is disposed between the oxide-containing layer and the contact structure. 1. A method of forming a semiconductor structure , comprising:forming an epitaxial region in a semiconductor substrate;forming a dielectric layer on the epitaxial region;forming a contact hole in the dielectric layer, wherein the contact hole exposes a part of the epitaxial region;forming an oxide-containing layer on the epitaxial region exposed by the contact hole; andforming a contact structure in the contact hole and on the oxide-containing layer, wherein the oxide-containing layer is located between the contact structure and the epitaxial region.2. The method of claim 1 , wherein the oxide-containing layer is formed by a process of forming the contact hole.3. The method of claim 1 , wherein a process of forming the oxide-containing layer comprises an oxygen treatment claim 1 , an implantation process claim 1 , or an atomic layer deposition process.4. The method of claim 1 , wherein the epitaxial region comprises a silicon phosphorus epitaxial region claim 1 , and a phosphorus ...

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Номер записи: 51
14-04-2016 дата публикации

METHOD FOR CLEANING CONTACT HOLE AND FORMING CONTACT PLUG THEREIN

Номер: US20160104612A1
Автор: CHANG Tsung-Hung, Chen Yi-Wei, Hsu Chia-Chang, Huang Chih-Sen, Huang Hsin-Fu, HUANG Shu-Min, Hung Ching-Wen, LEE Yi-Hui, Lin Ching-Ling, Wu Jia-Rong
Принадлежит: UNITED MICROELECTRONICS CORPORATION

The method for cleaning a contact hole and forming a contact plug therein is provided. The method includes steps of: providing a silicon substrate; forming a contact hole in the silicon substrate; performing a pre-cleaning process to clean the contact hole; and forming a contact plug in the contact hole. The pre-cleaning process includes steps of: performing an oxide dry etching process; performing a first thermal annealing process with a temperature which is equal to or greater than 300° C.; performing a degassing process with a temperature which is equal to or greater than 300° C.; and performing an Ar-plasma etching process. 1. A method for cleaning a contact hole and forming a contact plug therein , the method comprising:providing a silicon substrate;forming a contact hole in the silicon substrate;performing a pre-cleaning process to clean the contact hole, the pre-cleaning process including:performing an oxide dry etching process;performing a first thermal annealing process with a temperature which is equal to or greater than 300° C.;performing a degassing process for removing water and gas with a temperature ranging from 300° C.˜500° C.; andperforming an Ar-plasma etching process; andforming a contact plug in the contact hole.2. The method for cleaning the contact hole and forming the contact plug therein according to claim 1 , wherein a method of forming the contact plug in the contact hole while performing the Ar-plasma etching process includes steps of:depositing a barrier metal layer in the contact hole;performing a second thermal annealing process with a temperature which is equal to or greater than 450° C.; andforming a contact metal layer in the contact hole, wherein the contact metal layer is disposed on the barrier metal layer.3. The method for cleaning the contact hole and forming the contact plug therein according to claim 2 , wherein the step of depositing the barrier metal layer in the contact hole includes:stacking sequentially a Titanium (Ti) ...

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Номер записи: 52
14-04-2016 дата публикации

METHOD FOR FORMING SEMICONDUCTOR DEVICE

Номер: US20160104646A1
Автор: CHANG Tsung-Hung, Chen Yi-Wei, Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Lin Ching-Ling, Wu Jia-Rong
Принадлежит:

A manufacturing method for forming a semiconductor device includes: first, a substrate is provided, a fin structure is formed on the substrate, and a plurality of gate structures are formed on the fin structure, next, a hard mask layer and a first photoresist layer are formed on the fin structure, an first etching process is then performed on the first photoresist layer, afterwards, a plurality of patterned photoresist layers are formed on the remaining first photoresist layer and the remaining hard mask layer, where each patterned photoresist layer is disposed right above each gate structure, and the width of each patterned photoresist is larger than the width of each gate structure, and the patterned photoresist layer is used as a hard mask to perform an second etching process to form a plurality of second trenches. 1. A manufacturing method for forming a semiconductor device , at least comprising the following steps:providing a substrate, a fin structure is formed on the substrate, and a plurality of gate structures are formed on the fin structure;forming an interlayer dielectric on the gate structures;forming a hard mask layer and a first photoresist layer on the interlayer dielectric;performing a first etching process on the first photoresist layer, to form at least one first trench in the first photoresist layer and in the hard mask layer, so as to define a region;forming a plurality of patterned photoresist layers on the remaining hard mask layer, wherein each patterned photoresist layer is disposed right above each gate structure, and the width of each patterned photoresist is larger than the width of each gate structure; andusing the remaining hard mask layer and the patterned photoresist layer as a hard mask to perform an second etching process to form a plurality of second trenches, wherein the second trenches are only disposed within the region, and each second trench at least partially overlaps the range of the first trench.2. The method of claim 1 , ...

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Номер записи: 53
04-04-2019 дата публикации

METHOD OF MAKING A CARBONIZED FILM

Номер: US20190100433A1
Автор: Lai Yu-Chen, Wu Jia-Hao
Принадлежит:

A method of making a carbonized film is provided. The method is characterized in that a polyimide film is used as a precursor, on which a carbonizing heat treatment is performed. The heating rate during the carbonizing heat treatment within 500 to 800 degrees Celsius is equal to or lower than 2 degrees Celsius per minute. The highest carbonizing temperature is equal to or higher than 1000 degrees Celsius so as to form a carbonized film. The carbonized film is processed with a graphitizing heat treatment, in which the heating rate for graphitization at 2200 degrees Celsius or above is equal to or lower than 3 degrees Celsius per minute. The highest graphitizing temperature is equal to or higher than 2500 degrees Celsius. 1. A method of making a carbonized film , comprising:providing a polyimide film as a precursor; andperforming a carbonizing heat treatment on the polyimide film,wherein the heating rate for carbonization within 500 to 800 degrees Celsius is equal to or lower than 2 degrees Celsius, and the highest carbonization temperature is equal to or higher than 1000 degrees Celsius.2. The method according to claim 1 , wherein the heating rate during the carbonizing heat treatment within 500 to 800 degrees Celsius is equal to or lower than 1 degree Celsius per minute.3. The method according to claim 1 , wherein heating rate during the carbonizing heat treatment within 500 to 800 degrees Celsius is equal to or lower than 0.5 degree Celsius per minute.4. The method according to claim 1 , wherein the polyimide film is in sheet form or in roll form.5. The method according to claim 1 , wherein the highest carbonizing temperature during the carbonizing heat treatment is preferably 1300 degrees Celsius. The present disclosure relates to a method of making a carbonized film; more particularly, to a method using a polyimide film as a precursor, which is processed with a heat treatment so as to form a carbonized film, in which the heating rate for carbonization is ...

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Номер записи: 54
04-04-2019 дата публикации

METHOD OF MAKING A GRAPHITE FILM

Номер: US20190100438A1
Автор: Lai Yu-Chen, Wu Jia-Hao
Принадлежит:

A method of making a graphite film is provided. The method is characterized in that a polyimide film is used as a precursor, and a carbonizing heat treatment is performed, in which the carbonizing temperature ranges from 500 to 800 degrees Celsius and the heating rate is equal to or lower than 2 degrees Celsius per minute. The highest carbonizing temperature is equal to or higher than 1000 degrees Celsius. The method is also characterized in that the graphitizing temperature ranges from 2200 degrees temperature to the highest graphitizing temperature in which the average heating rate is equal to or lower than 3 degrees Celsius per minute. The highest graphitizing temperature is equal to or higher than 2500 degrees Celsius. 1. A method of making a graphite film , comprising:providing a polyimide film as a precursor;performing a carbonizing heat treatment on the polyimide film so as to form a carbonized film;heating the carbonized film from room temperature to 2200 degrees Celsius at a heating rate of higher than 5 degrees Celsius per minute; andperforming a graphitizing heat treatment on the carbonized film, in which the graphitizing temperature during the graphitizing heat treatment is increased from 2200 degrees Celsius to a highest graphitizing temperature and the average heating rate is equal to or lower than 3 degrees Celsius per minute.2. The method according to claim 1 , wherein the heating rate during the carbonizing heat treatment within 500 to 800 degrees Celsius is equal to or lower than 2 degrees Celsius per minute.3. The method according to claim 2 , wherein the heating rate during the carbonizing heat treatment within 500 to 800 degrees Celsius is equal to or lower than 1 degrees Celsius per minute.4. The method according to claim 1 , wherein the polyimide film is in sheet form or in roll form.5. The method according to claim 1 , wherein the highest carbonizing temperature during the carbonizing heat treatment is 1300 degrees Celsius.6. The method ...

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Номер записи: 55
13-04-2017 дата публикации

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Номер: US20170103896A1
Автор: Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Lin Chun-Hsien, Liu Ying-Cheng, Wu Jia-Rong
Принадлежит:

A method for fabricating semiconductor device is disclosed. The method includes the steps of : providing a substrate; forming a first gate structure on the substrate; forming a first contact plug adjacent to the first gate structure; and performing a replacement metal gate (RMG) process to transform the first gate structure into metal gate. 1. A method for fabricating semiconductor device , comprising:providing a substrate;forming a first gate structure on the substrate;forming a first contact plug adjacent to the first gate structure; andperforming a replacement metal gate (RMG) process to transform the first gate structure into metal gate after forming the first contact plug.2. The method of claim 1 , further comprising a fin-shaped structure on the substrate and a shallow trench isolation (STI) around the fin-shaped structure claim 1 , the method comprises:forming the first gate structure on the substrate and a second gate structure on the STI, wherein the first gate structure comprises a first hard mask and the second gate structure comprises a second hard mask;forming a first spacer adjacent to the first gate structure and a second spacer adjacent to the second gate structure;forming a first contact plug contacting the first spacer and forming a second contact plug on the STI and contacting the second spacer;forming a third hard mask on the first gate structure and the first contact plug;removing the second contact plug to form a first recess;forming an interlayer dielectric (ILD) layer in the first recess;removing part of the first contact plug;forming a fourth hard mask on the first contact plug; andperforming the RMG process.3. The method of claim 2 , wherein the third hard mask and the fourth hard mask comprise same material.4. The method of claim 2 , further comprising:forming a source/drain region in the substrate and adjacent to the first gate structure;forming silicide layer on the source/drain region;forming a metal layer on the fin-shaped structure, ...

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Номер записи: 56
20-04-2017 дата публикации

Apparatus for Extracting Radioactive Solid Particles and Method Thereof

Номер: US20170106318A1
Автор: Chang Bing-Hong, Huang Chun-Ping, Wu Jia-Ying
Принадлежит:

An apparatus is provided to extract radioactive solid particles. An extracting nozzle is used to extract radioactive solid particles. Then, a separator is used to separate out the radioactive solid particles into a storing container. The radioactive solid particles are avoided from entering a suction pump. Not only the suction pump is not polluted, but also the secondary waste is not increased. By designing a falling inlet of a suction channel at a position having a specific height, the amount of the radioactive solid particles being extracted is under control. There is a radiation-protection device outside of the storing container to minimize radiation dose. The separator and the storing container can be rapidly detached by remote operation, so that operators are avoided from receiving over-dose radiation. Hence, the present invention improves the level of technology and automation for handling radioactive waste. 1. An apparatus for extracting radioactive solid particles , comprising 'wherein said suction pump has a suction pipe to extract gas;', 'a suction pump,'} 'wherein said separator comprises a body and a chamber; said chamber is surrounded by said body; said body has a suction channel and a gas outlet; said suction channel is located in said chamber and connected with said body; said gas outlet is located on top of said body and adjacent to said suction channel; said gas outlet is connected with said suction pipe of said suction pump; said suction channel has a suction inlet located at an upper section of said suction channel to be protruded out from top of said body; and said suction channel has a falling inlet located at a lower section of said suction channel to be protruded out from bottom of said body;', 'a separator,'} 'wherein said extracting nozzle has an extracting pipe; and said extracting pipe is connected to said suction inlet of the suction channel to extract radioactive solid particles to said separator;', 'an extracting nozzle,'} 'wherein said ...

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Номер записи: 57
10-07-2014 дата публикации

Two-Portion Shallow-Trench Isolation

Номер: US20140191358A1
Автор: Liang Chia-Jui, Liou En-Chiuan, Tsao Po-Chao, Wu Jia-Rong
Принадлежит: UNITED MICROELECTRONICS CORP.

A shallow trench isolation (STI) and method of forming the same is provided. The STI structure comprises an upper insulating portion and a lower insulating portion, wherein the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. A part of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled. 1. A shallow trench isolation structure , comprising:an upper insulating portion and a lower insulating portion in a trench of a substrate, wherein said lower insulating portion comprises a first insulator and an insulating layer on the sidewall and the bottom of said first insulator, said upper insulating portion comprises a second insulator and a buffer layer on the sidewall and the bottom of said second insulator, a part of said buffer layer interfaces between said first insulator and said second insulator, and the outer sidewall of said buffer layer and the sidewall of said first insulator are leveled.2. A shallow trench isolation structure according to claim 1 , wherein the material of said first insulator and said second insulator is silicon oxide.3. A shallow trench isolation structure according to claim 1 , wherein the material of said buffer layer comprises stress buffer film claim 1 , silicon nitride claim 1 , or silicon carbonitride.4. A shallow trench isolation structure according to claim 1 , wherein said shallow trench isolation structure is an isolating structure between fin field effect transistors.5. A shallow trench isolation structure according to claim 1 , wherein the top surface of said upper insulating portion is higher than the surface of said substrate.6. A shallow trench isolation structure according to claim 1 , further comprising a pad oxide layer and a hard mask ...

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Номер записи: 58
30-04-2015 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20150118835A1
Автор: Huang Chih-Sen, Hung Ching-Wen, LIN CHIEN-TING, Lin Ching-Ling, Tsao Po-Chao, Wu Jia-Rong
Принадлежит: UNITED MICROELECTRONICS CORP.

A method for manufacturing a semiconductor device includes following steps. A substrate having at least a transistor embedded in an insulating material formed thereon is provided. The transistor includes a metal gate. Next, an etching process is performed to remove a portion of the metal gate to form a recess and to remove a portion of the insulating material to form a tapered part. After forming the recess and the tapered part of the insulating material, a hard mask layer is formed on the substrate to fill up the recess. Subsequently, the hard mask layer is planarized. 1. A method for manufacturing a semiconductor device , comprising:providing a substrate having at least a transistor embedded in an insulating material formed thereon, the transistor comprising a metal gate;performing an etching process to remove a portion of the metal gate to form a recess and a portion of the insulating material to form a tapered part;forming a hard mask layer on the substrate to fill up the recess; andplanarizing the hard mask layer.2. The method for manufacturing the semiconductor device according to claim 1 , wherein the etching process comprises at least a dry etching process.3. The method for manufacturing the semiconductor device according to claim 1 , wherein the metal gate comprises at least a gap-filling metal layer claim 1 , a multiple work function metal layer claim 1 , and a high dielectric constant (high-k) gate dielectric layer.4. The method for manufacturing the semiconductor device according to claim 3 , wherein the etching process further comprises:performing a metal etching process to remove a portion of the gap-filling metal layer and the multiple work function metal layer; andperforming an insulating material etching process to remove the portion of the insulating material.5. The method for manufacturing the semiconductor device according to claim 4 , wherein the insulating material etching process comprises CHF.6. The method for manufacturing the semiconductor ...

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Номер записи: 59
30-04-2015 дата публикации

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Номер: US20150118836A1
Автор: Huang Chih-Sen, Hung Ching-Wen, Lin Ching-Ling, Tsao Po-Chao, Wu Jia-Rong
Принадлежит: UNITED MICROELECTRONICS CORP.

A method of fabricating a semiconductor device is disclosed. Provided is a substrate having a dummy gate formed thereon, a spacer on a sidewall of the dummy gate and a first dielectric layer surrounding the spacer. The dummy gate is removed to form a gate trench. A gate dielectric layer and at least one work function layer is formed in the gate trench. The work function layer and the gate dielectric layer are pulled down, and a portion of the spacer is laterally removed at the same time to widen a top portion of the gate trench. A low-resistivity metal layer is formed in a bottom portion of the gate trench. A hard mask layer is formed in the widened top portion of the gate trench. 1. A method of fabricating a semiconductor device , comprising:providing a substrate having a dummy gate formed thereon, a spacer on a sidewall of the dummy gate and a first dielectric layer surrounding the spacer,removing the dummy gate to form a gate trench;forming a gate dielectric layer and at least one work function layer in the gate trench;pulling down the work function layer and the gate dielectric layer, and laterally removing a portion of the spacer at the same time to widen a top portion of the gate trench;forming a low-resistivity metal layer in a bottom portion of the gate trench; andforming a hard mask layer in the widened top portion of the gate trench.2. The method of fabricating the semiconductor device according to claim 1 , further comprising:forming a second dielectric layer covering the hard mask layer and the first dielectric layer;removing a portion of the second dielectric layer and a portion of the first dielectric layer to form a contact opening; andforming a contact plug in the contact opening.3. The method of fabricating the semiconductor device according to claim 2 , wherein the hard mask layer and the spacer have different removing rates.4. The method of fabricating the semiconductor device according to claim 2 , wherein the substrate is a substrate with fins ...

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Номер записи: 60
26-04-2018 дата публикации

DISPLAY DEVICE

Номер: US20180114478A1
Автор: Liao Chien-Huang, Tien Kun-Cheng, WU Jia-Long
Принадлежит:

A display device includes a plurality of gate lines, configured to output corresponding scan signals to corresponding pixels; a plurality of data lines, configured to receive display data and output corresponding pixel voltages to corresponding pixels, where the plurality of data lines includes 12 successive data lines from left to right; a gate driver, electrically coupled to the gate lines, configured to drive the pixels; and a data driver, electrically coupled to the data lines, configured to provide data signals to the pixels, where the data driver respectively provides data with polarities of: positive, negative, positive, negative, positive, negative, negative, positive, negative, positive, negative, and positive to the 12 data lines, and each column of pixels includes pixels in two forms; when the display data has a same gray scale, the data driver respectively provides two different pixel voltages to the pixels in two forms. 1. A display device , comprising:a plurality of pixels, comprising a first column of pixels, a second column of pixels, a third column of pixels, a fourth column of pixels, a fifth column of pixels, a sixth column of pixels, a seventh column of pixels, an eighth column of pixels, a ninth column of pixels, a tenth column of pixels, an eleventh column of pixels, and a twelfth column of pixels that are sequentially configured from left to right;a plurality of gate lines, configured to output corresponding scan signals to corresponding pixels;a plurality of data lines, configured to receive a piece of display data and output corresponding pixel voltages to corresponding pixels, wherein the plurality of data lines comprises 12 successive data lines from left to right;a gate driver, electrically coupled to the gate lines, configured to drive the plurality of pixels; anda data driver, electrically coupled to the data lines, configured to provide data signals to the plurality of pixels, wherein the data driver respectively provides data with ...

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Номер записи: 61
27-04-2017 дата публикации

DUAL GAMMA DISPLAY PANEL

Номер: US20170116934A1
Автор: Chen Yung-Jen, Hsu Wen-Hao, Liao Chien-Huang, Tien Kun-Cheng, WU Jia-Long
Принадлежит:

A display panel includes a driver, X data lines, Y scan lines, and X*Y pixels. The driver is configured to receive display data with X*Y resolution. The X data lines are electrically connected to the driver and configured to receive a plurality of pixel voltages. The X*Y pixels are electrically connected to the data lines and the scan lines. When each gray level of a first color display data set is identical and lower than a first threshold value, the pixel voltages of the plurality of first color subpixels are not identical. 1. A display panel , comprising:a driver, configured to receive display data with X*Y resolution;X data lines, electrically connected to the driver and configured to receive a plurality of pixel voltages;Y scan lines; and a plurality of first color subpixels;', 'a plurality of second color subpixels; and', 'a plurality of third color subpixels,, 'X*Y pixels, electrically connected to the data lines and the scan lines, said X*Y pixels comprisingwherein when each gray level of a first color display data set is identical and lower than a first threshold value, the pixel voltages of the plurality of first color subpixels are not identical.2. The display panel according to claim 1 , wherein the driver further comprises:a first gamma lookup table, configured to separately receive the display data and provide a plurality of first pixel voltages; anda second gamma lookup table, configured to separately receive the display data and provide a plurality of second pixel voltages.3. The display panel according to claim 2 , wherein pixels in odd rows receive the first pixel voltages claim 2 , and pixels in even rows receive the second pixel voltages.4. The display panel according to claim 2 , wherein each of the X*Y pixels comprise a first color subpixel claim 2 , a second color subpixel claim 2 , and a third color subpixel; the first color subpixels and the third color subpixels in the odd rows receive the first pixel voltages; the second color subpixels in ...

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Номер записи: 62
09-04-2020 дата публикации

SHIFT REGISTER UNIT, GATE DRIVING CIRCUIT AND DRIVING METHOD THEREOF

Номер: US20200111435A1
Автор: Tan Wen, Wu Bo, Wu Jia
Принадлежит:

The embodiments of the present disclosure provide a shift register unit, a gate driving circuit and a driving method thereof, and a display device. The shift register unit, includes two transfer gate modules (), two NOR gate modules (NOR NOR), two AND gate modules (AND AND), two capacitor modules (), and two inverter modules (). The shift register unit provided in the present disclosure can make the layout area occupied by the corresponding gate driving circuit reduce greatly as compared with that occupied by the gate driving circuit in the prior art, which facilitates border narrowing of the corresponding display device. 1. A shift register unit , comprising two transfer gate modules , two NOR gate modules , two AND gate modules , two capacitor modules , and two inverter modules;a first terminal of a first capacitor module is connected to a first node; a first terminal of a second capacitor module is connected to a third node;a first input terminal of a first transfer gate module is connected to the pulse signal input terminal, a second input terminal of the first transfer gate module is connected to a first clock signal input terminal, a third input terminal of the first transfer gate module is connected to a second clock signal input terminal, and an output terminal of the first transfer gate module is connected to the first node; a first input terminal of a second transfer gate module is connected to a second node, a second input terminal of the second transfer gate module is connected to a third clock signal input terminal, a third input terminal of the second transfer gate module is connected to a fourth clock signal input terminal, and an output terminal of the second transfer gate module is connected to the third node;each transfer gate module is configured to be turned on when the first level is inputted to the second input terminal thereof and the third input terminal thereof is at a second level, so as to write a scan signal inputted to the first input ...

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Номер записи: 63
05-05-2016 дата публикации

SYSTEM AND METHOD FOR MOUNTING HEADS-UP DISPLAY MODULES

Номер: US20160124227A1
Автор: Pommerenke David, Shao Peng, Wu Jia Chi, Zhang Hai Yong, Zhang Wenfeng, Zhao Jia Ning, Zheng Chenchen
Принадлежит:

A device comprising means for engaging said device to at least a portion of an outside surface of a glass of a headwear, means for engaging said device to at least a portion of an inside surface of glass of said headwear, means for mounting a display module or video capturing device and said means for engaging said device to at least a portion of an inside surface of a headwear to said device, and means for adjusting a viewing angle of said display module or video capturing device with a generally 360 degrees rotation. 1. A device comprising:an outer housing;a first magnet, wherein said first magnet being configured to be in at least partial engagement with at least a portion of said outer housing;an inner housing comprising at least a first end portion and a second end portion;a second magnet, said second magnet being in at least a partial engagement with said first end portion of said inner housing, wherein said second magnet is configured to at least enable a substantial magnetic attraction with said first magnet;a shaft, said shaft comprising a ball at a distal end portion of said shaft and a mounting platform at an opposite distal end portion of said shaft, wherein said ball being configured to be in engagement with said second end portion of said inner housing, in which said shaft is further configured to be capable of rotation within said inner housing;2. The device of claim 1 , wherein said first magnet and said second magnet being configured to at least enable a substantial magnetic engagement of said device with at least a portion of a goggle or helmet.3. The device of claim 2 , wherein at least a portion of said mounting platform is configured to be substantially engaged with at least a display module or a video capturing device.4. The device of claim 3 , wherein said helmet is at least a motorcycle helmet.5. The device of claim 4 , wherein said outer housing along with said first magnet are generally located outwardly and proximal to an outside surface ...

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Номер записи: 64
27-05-2021 дата публикации

TOUCH PANEL AND MANUFACTURING METHOD THEREOF

Номер: US20210157448A1
Автор: Chu Chun-Hung, Fang Wei-Chia, HSIAO CHUNG-CHIN, Tsai Yi-Chen, Wu Jia-Xiang
Принадлежит:

A touch panel and a manufacturing method thereof are provided. The touch panel includes a substrate, peripheral leads, a touch sensing electrode, and first intermediate layers. The peripheral leads are disposed in a peripheral area of the substrate. The first intermediate layers are disposed between the peripheral leads and the substrate. The touch sensing electrode includes a plurality of modified metal nanowires. The modified metal nanowires have first surfaces in direct contact with each other at an intersection. The modified metal nanowires have second surfaces with covering structures, and the second surfaces are at a non-intersection. 1. A touch panel , comprising:a substrate, wherein the substrate has a display area and a peripheral area;a plurality of peripheral leads disposed in the peripheral area of the substrate;a plurality of first intermediate layers disposed between the peripheral leads and the substrate; anda touch sensing electrode disposed in the display area of the substrate and electrically connected with the peripheral leads, wherein the touch sensing electrode comprises a plurality of modified metal nanowires, the modified metal nanowires have first surfaces in direct contact with each other at an intersection, the modified metal nanowires have second surfaces with covering structures, and the second surfaces are at a non-intersection.2. The touch panel of claim 1 , wherein the first intermediate layers comprise the modified metal nanowires.3. The touch panel of claim 1 , wherein the first intermediate layers comprise a plurality of unmodified metal nanowires claim 1 , and outer surfaces of the peripheral leads are each provided with the covering structure.4. The touch panel of claim 1 , further comprising: a film layer claim 1 , wherein the modified metal nanowires are exposed on the film layer.5. The touch panel of claim 4 , wherein the touch sensing electrode further comprises a plurality of unmodified metal nanowires disposed in the film ...

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Номер записи: 65
25-08-2022 дата публикации

ELECTRICAL CONNECTOR ASSEMBLY

Номер: US20220271455A1
Автор: Ge Man, Li Xu-Kun, Liang Ya-Ping, LIU MENG, Meng Ta-Teh, SHI Mei, Wu Jia-Ying, Xu Bo-Wen
Принадлежит:

An electrical connector assembly includes an electrical plug connector and an electrical receptacle connector corresponding to the electrical plug connector. The electrical plug connector includes a plug insulated housing as well as plug terminals and buckling portions on the plug insulated housing. The electrical receptacle connector includes a receptacle insulated housing as well as receptacle terminals and locking components on the receptacle insulated housing. The locking components at the two sides of the electrical receptacle connector are firmly buckled with the buckling portions at the two sides of the electrical plug connector. Therefore, during the use of the electrical connector assembly, the electrical plug connector can be prevented from detaching off the electrical receptacle connector. 1. An electrical connector assembly , comprising:an electrical plug connector comprising a plug insulated housing, a plurality of plug terminals, and a plurality of buckling portions, wherein the plug terminals are at the plug insulated housing, and the buckling portions are at two sides of the plug insulated housing; andan electrical receptacle connector comprising a receptacle insulated housing, a plurality of receptacle terminals, and a plurality of locking components, wherein the receptacle terminals are at the receptacle insulated housing and correspond to the plug terminals, and each of two sides of the receptacle insulated housing has a positioning portion; each of the locking components comprises a locking member and an elastic member; the locking member is pivotally connected to the positioning portion, the elastic member is at the positioning portion to push against the locking member, and each of the locking members of the electrical receptacle connector is buckled with a corresponding one of the buckling portions of the electrical plug connector.2. The electrical connector assembly according to claim 1 , wherein the electrical receptacle connector comprises ...

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Номер записи: 66
10-05-2018 дата публикации

FABRICATION OF A GRAPHITE FILM BASED ON A POLYIMIDE FILM

Номер: US20180127561A1
Автор: Lai Yu-Chen, Wu Jia-Hao
Принадлежит:

A polyimide film suitable for use in the fabrication of a graphite layer includes a polyimide derived from reaction of diamine monomers with dianhydride monomers, and a foaming agent incorporated in the polyimide. Moreover, a process of fabricating a graphite film includes providing a polyamic acid solution formed by reaction of diamine monomers with dianhydride monomers, incorporating a foaming agent into the polyamic acid solution, forming a polyimide film from the polyamic acid solution, applying a first thermal treatment so that the polyimide film is carbonized to form a carbon film, and applying a second thermal treatment so that the carbon film is converted to a graphite film. 1. A polyimide film suitable for use in the fabrication of a graphite film , the polyimide film comprising a polyimide derived from reaction of diamine monomers with dianhydride monomers , and a foaming agent incorporated in the polyimide.2. The polyimide film of claim 1 , wherein the diamine monomers are selected from the group consisting of 4 claim 1 ,4′-oxydianiline (4 claim 1 ,4′-ODA) claim 1 , phenylenediamine (p-PDA) claim 1 , 2 claim 1 ,2′-bis(trifluoromethyl)benzidine (TFMB) claim 1 , 1 claim 1 ,3-bis(4-aminophenoxy)benzene (TPER) claim 1 , 1 claim 1 ,4-bis(4-aminophenoxy)benzene (TPEQ) claim 1 , 2 claim 1 ,2′-dimethyl[1 claim 1 ,1′-biphenyl]-4 claim 1 ,4′-diamine (m-TB-HG) claim 1 , 1 claim 1 ,3′-bis(3-aminophenoxy) benzene (APBN) claim 1 , 3 claim 1 ,5-diamino benzotrifluoride (DABTF) claim 1 , 2 claim 1 ,2′-bis[4-(4-aminophenoxy) phenyl]propane (BAPP) claim 1 , 6-amino-2-(4-aminophenyl) benzoxazole (6PBOA) and 5-amino-2-(4-aminophenyl) benzoxazole (SPBOA) claim 1 , and the dianhydride monomers are selected from the group consisting of 3 claim 1 ,3′ claim 1 ,4 claim 1 ,4′-biphenyltetracarboxylic dianhydride (BPDA) claim 1 , 2 claim 1 ,2-bis [4-(3 claim 1 ,4dicarboxyphenoxy) phenyl] propane dianhydride (BPADA) claim 1 , pyromellitic dianhydride (PMDA) claim 1 , 2 claim 1 ,2′-bis ...

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Номер записи: 67
10-05-2018 дата публикации

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING A PATTERNED METAL LAYER EMBEDDED IN AN INTERLAYER DIELECTRIC LAYER

Номер: US20180130742A1
Автор: CHANG Tsung-Hung, Chen Yi-Wei, Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Lin Ching-Ling, Wu Jia-Rong
Принадлежит:

A method for fabricating semiconductor device first includes providing a substrate and a shallow trench isolation (STI) in the substrate, in which the substrate includes a first metal gate and a second metal gate thereon, a first hard mask on the first metal gate and a second hard mask on the second metal gate, and a first interlayer dielectric (ILD) layer around the first metal gate and the second metal gate. Next, the first hard mask and the second hard mask as mask are utilized to remove part of the first ILD layer for forming a recess, and a patterned metal layer is formed in the recess and on the STI. 1. A method for fabricating semiconductor device , comprising:providing a substrate and a shallow trench isolation (STI) in the substrate, wherein the substrate comprises a first metal gate and a second metal gate thereon, a first hard mask on the first metal gate and a second hard mask on the second metal gate, and a first interlayer dielectric (ILD) layer around the first metal gate and the second metal gate;utilizing the first hard mask and the second hard mask as mask to remove part of the first ILD layer for forming a recess; andforming a patterned metal layer in the recess and on the STI, wherein the top surface of the patterned metal layer is lower than the top surfaces of the first hard mask and the second hard mask and an absolute bottom surface of the patterned metal layer is higher than a top surface of the metal gate.2. The method of claim 1 , further comprising:forming a metal layer on the first hard mask, the second hard mask, and the first ILD layer;forming a dielectric stack on the metal layer;patterning the dielectric stack and the metal layer to form a patterned dielectric stack and the patterned metal layer in the recess;forming a second ILD layer on the first hard mask, the second hard mask, the first ILD layer, the patterned dielectric stack and the patterned metal layer;forming a first contact plug in the second ILD layer and the first ILD ...

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Номер записи: 68
07-08-2014 дата публикации

PORTABLE POWER SUPPLY HAVING LOWER CHARGING VOLTAGE THAN DISCHARGING VOLTAGE

Номер: US20140217961A1
Автор: CHEN Yi-An, WU JIA-YI, YANG TZU-YU
Принадлежит: ZONESKING TECHNOLOGY CO., LTD.

The portable power supply contains at least a first battery, at least a second battery, at least a first switch element, at least a second switch element, a plurality of charging and regulating circuits, an input interface element, and an output interface element. Each second battery is electrically connected in series with a first battery through a first switch element. Each second switch element is electrically connected in-series between ground and a first battery or a second battery. Each charging and regulating circuit is electrically connected to a first battery or a second battery The input interface element has an end electrically connected to an external power source, and another end electrically connected to all charging and regulating circuits. The output interface element has an end electrically connected to an external electronic device, and another end electrically connected to a first battery or a second battery. 1. A portable power supply , comprising:at least a first battery;at least a second battery;at least a first switch element;at least a second switch element;a plurality of charging and regulating circuits;an input interface element; andan output interface element;wherein each second battery is electrically connected in series with a first battery through a first switch element;each first switch element is electrically connected in-series between a first battery and a second battery;each second switch element is electrically connected in-series between ground and a first battery or a second battery;each charging and regulating circuit is electrically connected to a first battery or a second battery;the input interface element has an end electrically connected to an input connection element for electrically connecting the input interface element with an external power source, and another end electrically connected to all charging and regulating circuits; and the output interface element has an end electrically connected to an output connection ...

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Номер записи: 69
28-05-2015 дата публикации

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

Номер: US20150145027A1
Автор: Huang Chih-Sen, Hung Ching-Wen, Lin Ching-Ling, Wu Jia-Rong
Принадлежит: UNITED MICROELECTRONICS CORP.

A method for fabricating a semiconductor device is provided according to one embodiment of the present invention and includes forming an interlayer dielectric on a substrate; forming a trench surrounded by the interlayer dielectric; depositing a dielectric layer and a work function layer on a surface of the trench sequentially and conformally; filling up the trench with a conductive layer; removing an upper portion of the conductive layer inside the trench; forming a protection film on a top surface of the interlayer dielectric and a top surface of the conductive layer through a directional deposition process; removing the dielectric layer exposed from the protection film; and forming a hard mask to cover the protection film. 1. A method for fabricating a semiconductor device , comprising:forming an interlayer dielectric on a substrate;forming a trench surrounded by the interlayer dielectric;sequentially and conformally depositing a dielectric layer and a work function layer on a surface of the trench;filling up the trench with a conductive layer;removing an upper portion of the conductive layer inside the trench;forming a protection film on a top surface of the interlayer dielectric and a top surface of the conductive layer after the step of removing the upper portion of the conductive layer inside the trench;removing the dielectric layer exposed from the protection film; andforming a hard mask in the trench to cover the protection film.2. The method according to claim 1 , wherein the interlayer dielectric and the dielectric layer are made of oxides.3. The method according to claim 1 , wherein both the work function layer and the conductive layer are covered by the protection film.4. The method according to claim 1 , wherein an etching rate of the dielectric layer is 5 times greater than an etching rate of the protection film during the step of removing the dielectric layer exposed from the protection film.5. The method according to claim 1 , further comprising ...

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Номер записи: 70
08-09-2022 дата публикации

PORTABLE COMPUTING DEVICE

Номер: US20220283627A1
Автор: Chang Chia-Sen, Kao Shih-Hsiang, Lin Hao-Hsuan, Shen Yu-Cheng, Su Yu-Hsiu, Wang Chun-Nan, Wu Jia-Ying
Принадлежит: ASUSTEK COMPUTER INC.

A portable computing device including a central processing unit (CPU) and a controller is provided. The controller is coupled between the CPU, a graphics processing unit, and a battery module. The controller determines whether to adjust performance of the CPU and the graphics processing unit according to at least one of a battery capacity, a battery power, a battery current, a battery voltage, or a battery temperature of the battery module. 1. A portable computing device , comprising:a central processing unit (CPU); anda controller, coupled between the CPU, a graphics processing unit, and a battery module, the controller determines whether to adjust performance of at least one of the CPU or the graphics processing unit according to one or a combination of a battery capacity, a battery power, a battery current, a battery voltage, or a battery temperature of the battery module,wherein when the controller determines that one or a combination of the battery capacity, the battery power, the battery current, the battery voltage, or the battery temperature of the battery module meets a reduction condition, the controller reduces the performance of at least one of the CPU or the graphics processing unit; andwhen the controller determines that one or a combination of the battery capacity, the battery power, the battery current, the battery voltage, or the battery temperature of the battery module meets a restoration condition, the controller restores the performance of at least one of the CPU or the graphics processing unit.2. The portable computing device according to claim 1 , wherein the controller performs a performance control method to adjust the performance of at least one of the CPU or the graphics processing unit claim 1 , the performance control method comprises a plurality of performance reduction steps and a plurality of performance restoration steps claim 1 , and each of the performance reduction steps and each of the performance restoration steps respectively ...

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Номер записи: 71
18-05-2017 дата публикации

BALANCED BATTERY CHARGING DEVICE

Номер: US20170141591A1
Автор: CHEN LI-BANG, WU JIA-YI, YANG TZU-YU
Принадлежит:

The battery charging device contains at least a first charging battery, at least a second charging battery, and a control module parallel-connected to the first and second charging batteries. The control module contains a control unit, a detection element, and a switch element. The control unit is configured with a current threshold. The detection element detects a total current from the first and second charging batteries. The control unit triggers the switch element to disconnect the first charging battery when the total current is greater than the current threshold. The control unit then triggers the switch element to reconnect the first charging battery when the total current drops below the current threshold. 1. A battery charging device , comprising:at least a first charging battery;at least a second charging battery; anda control module parallel-connected to the first and second charging batteries;wherein the control module comprises a control unit, a detection element, and a switch element; the control unit is configured with a current threshold; the detection element detects a total current from the first and second charging batteries; the control unit triggers the switch element to disconnect the first charging battery when the total current is greater than the current threshold; and the control unit triggers the switch element to reconnect the first charging battery when the total current drops below the current threshold.2. The battery charging device according to claim 1 , wherein the control module further comprises a first input port and a second input port for connection with the first and second charging batteries claim 1 , respectively; and the current threshold is less than or equal to the rated currents of the first and second charging batteries.3. The battery charging device according to claim 1 , wherein the control module further comprises a functional unit; and the functional unit comprises one of a lighting element claim 1 , a display claim ...

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Номер записи: 72
30-04-2020 дата публикации

BOARD-TO-BOARD CONNECTOR AND BOARD-TO-BOARD CONNECTOR ASSEMBLY

Номер: US20200136284A1
Автор: Chang Hsin-Yu, LI Zheng, Liang Ya-Ping, LIU MENG, Men Wen-Liang, Meng Ta-Teh, SHI Mei, Shi Ping, Wu Jia-Ying, Xu Bo-Wen
Принадлежит: ADVANCED CONNECTEK INC.

The disclosure relates to a board-to-board connector including a body, multiple terminals and a pair of metal fittings. The body has an accommodating recess. The terminal is disposed on the body and a portion of each of the terminals extends to the accommodating recess. The metal fittings are disposed on the body and beside the accommodating recess. The terminals are located between metal fittings. Each of the metal fittings has at least one limiting portion that extends to the accommodating recess. The limiting portion leans against a corner of the accommodating recess so that the metal fittings and the body generate a two-dimensional limitation. A board-to-board connector assembly is also provided. 1. A board-to-board connector , comprising:a body having an accommodating recess;a plurality of terminals disposed on the body, a portion of each of the terminals extending to the accommodating recess; anda pair of metal fittings disposed on the body and located beside the accommodating recess with the terminals located between the pair of metal fittings, each of the metal fittings having at least one limiting portion extending to the accommodating recess, wherein the limiting portion leans against a corner of the accommodating recess so that the metal fittings and the body generate a two-dimensional limitation.2. The board-to-board connector according to claim 1 , wherein the board-to-board connector is a receptacle connector claim 1 , the body further has an island structure claim 1 , the accommodating recess surrounds the island structure claim 1 , and each of the metal fittings has a pair of limiting portions respectively located in two adjacent corners of the accommodating recess and corresponding to the island structure across the accommodating recess.3. The board-to-board connector according to claim 1 , wherein each of the metal fittings has a side plate and a pair of wing plates extending from the side plate claim 1 , and the limiting portion is located between ...

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Номер записи: 73
31-05-2018 дата публикации

FABRICATION OF A ROLL OF A GRAPHITE FILM BASED ON A ROLLED POLYIMIDE FILM

Номер: US20180148339A1
Автор: Lai Yu-Chen, Wu Jia-Hao
Принадлежит:

A process of fabricating a graphite film includes providing a roll of a polyimide film, applying a first thermal treatment so that the roll of the polyimide film is carbonized to form a roll of a carbon film, and applying a second thermal treatment so that the roll of the carbon film is converted to a roll of a graphite film. The rolled polyimide film has a thickness between 10 μm and 150 μm, and includes polyimide derived from reaction of diamine monomers with dianhydride monomers, the dianhydride monomers including pyromellitic dianhydride (PMDA), the diamine monomers including 4,4′-oxydianiline (4,4′-ODA) and phenylenediamine (PDA) with a ODA:PDA diamine molar ratio being 50:50 to 80:20. 1. A process of fabricating a graphite film , comprising:providing a roll of a polyimide film, the polyimide film being formed from reaction of diamine monomers with dianhydride monomers, the dianhydride monomer including pyromellitic dianhydride (PMDA), the diamine monomers including 4,4′-oxydianiline (4,4′-ODA) and phenylenediamine (PDA) with a molar ratio of ODA:PDA being 50:50 to 80:20, and the polyimide film having a thickness between about 10 μm and about 150 μm;applying a first thermal treatment so that the roll of the polyimide film is carbonized to form a roll of a carbon film; andapplying a second thermal treatment so that the roll of the carbon film is converted to a roll of a graphite film.2. The process according to claim 1 , wherein the polyimide film has a Young's modulus between about 330 kgf/mmand about 480 kgf/mm.3. The process according to claim 1 , wherein the molar ratio of ODA:PDA is 70:30 to 50:50 claim 1 , and the polyimide film has a thickness between about 10 μm and about 25 μm.4. The process according to claim 1 , wherein the molar ratio of ODA:PDA is 75:25 to 60:40 claim 1 , and the polyimide film has a thickness between about 25 μm and about 38 μm.5. The process according to claim 1 , wherein the molar ratio of ODA:PDA is 80:20 to 65:35 claim 1 , and ...

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Номер записи: 74
31-05-2018 дата публикации

CHARACTER RECOGNITION SYSTEMS AND CHARACTER RECOGNITION METHODS THEREOF USING CONVOLUTIONAL NEURAL NETWORK

Номер: US20180150956A1
Автор: KANG Hao-Ping, Kao Chih-Chung, WU Jia-Hua
Принадлежит:

A character recognition method is provided, including the steps of: recognizing a character string, which includes one or more characters, in a region of interest (ROI) using a first convolutional neural network (CNN) model to generate a recognized character string; and comparing the recognized character string with a plurality of character strings in a character database to find a character string corresponding to the recognized character string, wherein each of the character strings includes one or more characters; wherein if the character string corresponding to the recognized character string is found, the recognized character string is used as a character recognition result, otherwise, using a second CNN model to correct the recognized string and generate a new recognized character string as the character recognition result. 1. A character recognition method applied to a character recognition system including a storage device and an image processor , comprising:recognizing a character string, which includes one or more characters, in a region of interest (ROI) using a first convolutional neural network (CNN) model to generate a recognized character string; andcomparing the recognized character string with a plurality of character strings in a character database to find a character string corresponding to the recognized character string, wherein each of the plurality of character strings includes one or more characters,wherein if the character string corresponding to the recognized character string is found, using the recognized character string as a character recognition result, otherwise, using a second CNN model to correct the recognized character string and generate a new recognized character string as the character recognition result.2. The character recognition method as claimed in claim 1 , wherein the ROI is obtained by detecting an input image using a block detection CNN model claim 1 , and the ROI is normalized.3. The character recognition method as ...

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Номер записи: 75
14-05-2020 дата публикации

VR MOVEMENT PLATFORM

Номер: US20200150748A1
Автор: Chong Liu, Wu Jia Zhong, Wu Juan, Xu Jin Xa
Принадлежит:

In some embodiments, a movement platform may be used to develop force models for the determination of movement based on force patterns received from the movement platform. A force model is made by comparing a known user movement to force readings recorded during the user movement. Movement platform force readings may be compared to a plurality of force models to determine a user movement. Once a matching force model is determined, the matching force model may be used to generate instructions for moving a user on the movement platform. 1. A method comprising:monitoring, by a processor and during a first time period, a grid of a plurality of movement units on a movement platform;detecting, by a first force sensor on a first movement unit of the plurality of movement units, force data, wherein the force data comprises a first force exerted upon the first movement unit by a first user;receiving, by the processor, a first set of movement information of the first user for the first time period; andcompiling, by the processor, the force data and the movement information into a first force model.2. The method of wherein the first force model is linked to a second force model.3. The method of wherein the first force model is at a first level in a data tree consisting of a plurality of force models.4. The method of further comprising:sending the first force model to a computer system connected to a virtual reality system; andpredicting, by the computer system, movement of the user based on the force model.5. The method of wherein the force data includes rotational force information.6. The method of wherein the force data includes pressure information.7. The method of wherein the first force model is compared to a plurality of other force models to determine an accuracy of the first force model.8. The method of claim 1 , further comprising:detecting, by the processor, a second force exerted upon a second force sensor in a second movement unit of the plurality of movement units ...

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Номер записи: 76
08-06-2017 дата публикации

METHOD OF FORMING SEMICONDUCTOR STRUCTURE

Номер: US20170162449A1
Автор: Chen Ming-Jui, Chen Yi-Wei, Cheng Yung-Feng, Huang Chia-Wei, Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Liu Ying-Cheng, Lo Wei-Cyuan, Lu Chia-Lin, Wang Shu-Ru, Wu Jia-Rong, Wu Yi-Kuan, Yin Tan-Ya
Принадлежит:

A method of forming a semiconductor structure is provided. A substrate having a memory region is provided. A plurality of fin structures are provided and each fin structure stretching along a first direction. A plurality of gate structures are formed, and each gate structure stretches along a second direction. Next, a dielectric layer is formed on the gate structures. A first patterned mask layer is formed, wherein the first patterned mask layer has a plurality of first trenches stretching along the second direction. A second patterned mask layer on the first patterned mask layer, wherein the second patterned mask layer comprises a plurality of first patterns stretching along the first direction. Subsequently, the dielectric layer is patterned by using the first patterned mask layer and the second patterned mask layer as a mask to form a plurality of contact vias. The contact holes are filled with a conductive layer. 1. A method of forming a semiconductor structure , comprising:providing a substrate having a memory region;forming a plurality of fin structures in the memory region on the substrate, each fin structure stretching along a first direction;forming a plurality of gate structures on the fin structures, each gate structure stretching along a second direction;forming a dielectric layer on the gate structures;forming a first patterned mask layer on the dielectric layer, wherein the first patterned mask layer has a plurality of first trenches stretching along the second direction through the memory region from a top view;forming a second patterned mask layer on the first patterned mask layer, wherein the second patterned mask layer comprises a plurality of second patterns stretching along the first direction through the memory region from the top view;patterning the dielectric layer by using the first patterned mask layer and the second patterned mask layer as a mask to form a plurality of contact vias; andfilling the contact holes with a conductive layer to ...

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Номер записи: 77
18-06-2015 дата публикации

HIGH GAIN ANTENNA STRUCTURE

Номер: US20150171521A1
Автор: PENG Huang Tse, Tao Yu, Wu Chin-Jui, Wu Jia-Fong
Принадлежит:

An antenna structure includes a dipole antenna element, a meandering connection line, and a cascade radiation element. The dipole antenna element includes a feeding radiation element and a grounding radiation element. The feeding radiation element has at least one open slot. The cascade radiation element is coupled through the meandering connection line to the feeding radiation element. 1. An antenna structure , comprising:a dipole antenna element, comprising a feeding radiation element and a grounding radiation element, wherein the feeding radiation element has at least a first open slot;a first meandering connection line; anda first cascade radiation element, coupled through the first meandering connection line to the feeding radiation element.2. The antenna structure as claimed in claim 1 , wherein a feeding point on the feeding radiation element is coupled to a signal source claim 1 , and a grounding point on the grounding radiation element is coupled to a ground voltage.3. The antenna structure as claimed in claim 2 , wherein the feeding point is adjacent to an open end of the first open slot.4. The antenna structure as claimed in claim 3 , wherein the open end of the first open slot is positioned at a first edge of the feeding radiation element claim 3 , the first meandering connection line is coupled to a second edge of the feeding radiation element claim 3 , and the first edge is opposite to the second edge.5. The antenna structure as claimed in claim 1 , wherein each of the feeding radiation element and the grounding radiation element substantially has a rectangular shape.6. The antenna structure as claimed in claim 1 , wherein the first open slot substantially has a straight-line shape.7. The antenna structure as claimed in claim 1 , wherein the first meandering connection line substantially has a combination of one or more W-shapes.8. The antenna structure as claimed in claim 1 , wherein the first cascade radiation element substantially has a rectangular ...

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Номер записи: 78
23-05-2019 дата публикации

FLEXIBLE CIRCUIT BOARD AND DISPLAY PANEL

Номер: US20190159335A1
Автор: Wu Jia-Shu
Принадлежит:

This invention provides a flexible circuit board comprising a substrate and a protective layer, the protective layer being disposed on the substrate. The protective layer includes a glue layer, a first functional layer, and a second functional layer sequentially stacked on the substrate. The first functional layer comprises two or more first bending bands arranged at intervals. The two or more first bending bands extend in the same direction. The second functional layer comprises two or more second bending bands arranged at intervals. The two or more second bending bands extend in the same direction. The extending direction of the two or more first bending bands is disposed with an angle with the extending direction of the two or more second bending bands. By using the flexible circuit board provided by this invention, the strength thereof is improved, and it is effectively protected, in the meanwhile of more easily bending. 1. A flexible circuit board comprising a substrate and a protective layer , the protective layer being disposed on the substrate , whereinthe protective layer includes a glue layer, a first functional layer, and a second functional layer sequentially stacked on the substrate, the first functional layer includes two or more first bending bands arranged at intervals, the two or more first bending bands extend in the same direction, the second functional layer includes two or more second bending bands arranged at intervals, the two or more second bending bands extend in the same direction, and the extending direction of the two or more first bending bands is disposed with an angle with the extending direction of the two or more second bending bands.2. The flexible circuit board as claimed in claim 1 , wherein the materials of the two or more first bending bands and the two or more second bending bands are flexible inorganic fiber material and/or flexible polymer.3. The flexible circuit board as claimed in claim 2 , wherein the flexible inorganic ...

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Номер записи: 79
11-09-2014 дата публикации

IMAGE SEGMENTATION APPARATUS, MEDICAL IMAGE DEVICE AND IMAGE SEGMENTATION METHOD

Номер: US20140254899A1
Автор: DAI Jing, DONG Qiuying, Wu Jia
Принадлежит:

The disclosure provides an image segmentation apparatus, an image segmentation method and a medical image device for segmenting an object having a tree-shaped tubular structure from a volume image consisting of a series of images photographed on the basis of slices. The image segmentation apparatus comprises: a self-adaptive region growing unit configured to perform region growing according to the volume image, based on a seed point and a preset threshold to obtain at least one part of the tree-shaped tubular structure; and a growing control unit configured to change the preset threshold to re-perform the region growing until a given condition is met.

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Номер записи: 80
25-06-2015 дата публикации

METHOD AND APPARATUS FOR CLUSTERING PORTABLE EXECUTABLE FILES

Номер: US20150178306A1
Автор: Bai Zi Pan, Cui Jing Bing, Wu Jia Xu, Yang Yi, Yu Tao
Принадлежит:

The present invention relates to Internet and communication technologies, and discloses a method and apparatus for clustering portable executable (PE) files. The method comprises: extracting PE file characteristics from a PE file; generating a PE file identifier for the PE file based on the PE file characteristics; and clustering the PE file base on the PE file identifier. The apparatus comprises an extraction module, a generation module, and a clustering module. In accordance with embodiments of the present invention, a PE file identifier is generated for the PE file based on PE file characteristics extracted from the PE file, and the PE files are clustered based on the PE file identifier. Thus, random PE files are clustered into ordered classes, and the number of PE files to be processed by the antivirus clients and servers are reduced, which reduces storage costs, improves matching efficiency and the ability to detect and combat PE virus variants. 1. A method for clustering portable executable (PE) files , the method comprising:extracting PE file characteristics from a PE file;generating a PE file identifier for the PE file based on the PE file characteristics; andclustering the PE file base on the PE file identifier.2. The method of claim 1 , further comprising claim 1 , after extracting PE file characteristics from a PE file claim 1 ,forming a PE file characteristic set using the extracted PE file characteristics, wherein the PE file characteristic set comprises at least one PE file characteristic; andwherein generating a PE file identifier for the PE file based on the PE file characteristics comprises generating a PE file identifier for the PE file based on the PE file characteristic set.3. The method of claim 1 , wherein generating a PE file identifier for the PE file based on the PE file characteristics comprises:when a similarity between the extracted PE file characteristics and the PE file characteristics for a second PE file reaches a preset threshold, ...

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Номер записи: 81
21-06-2018 дата публикации

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Номер: US20180174970A1
Автор: Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Liu Ying-Cheng, Wu Jia-Rong
Принадлежит:

A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a first gate structure on the substrate, a first spacer around the first gate structure, and an interlayer dielectric (ILD) layer around the first spacer; performing a first etching process to remove part of the ILD layer for forming a recess; performing a second etching process to remove part of the first spacer for expanding the recess; and forming a contact plug in the recess. 1. A method for fabricating semiconductor device , comprising:providing a substrate;forming a first gate structure on the substrate, a first spacer around the first gate structure, and an interlayer dielectric (ILD) layer around the first spacer;performing a first etching process to remove part of the ILD layer for forming a recess;performing a second etching process to remove part of the first spacer for expanding the recess; andforming a contact plug in the recess.2. The method of claim 1 , further comprising:forming a second gate structure on the substrate, a second spacer around the second gate structure, and the ILD layer around the first spacer and the second spacer;performing the first etching process to remove part of the ILD layer between the first gate structure and the second gate structure;performing the second etching process to remove part of the first spacer and part of the second spacer; andforming the contact plug.3. The method of claim 2 , further comprising:forming a contact etch stop layer (CESL) on the first spacer and the second spacer before forming the ILD layer;performing the first etching process;performing the second etching process to remove part of the CESL, part of the first spacer, and part of the second spacer; andforming the contact plug.4. The method of claim 2 , further comprising:forming a first hard mask on the first gate structure and a second hard mask on the second gate structure, wherein the top surfaces of the first hard mask, the second hard mask, ...

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Номер записи: 82
28-05-2020 дата публикации

PROJECTOR AND BRIGHTNESS ADJUSTING METHOD

Номер: US20200168137A1
Автор: Cho Chih-Wei, Wu Jia-Zhen
Принадлежит:

A projector includes a light sensor, a micromirror device, a light source and a processor. The light sensor senses an ambient brightness. The micromirror device is controlled by a duty cycle. The light source is controlled by a driving current. The processor receives an image including a plurality of non-black pixels. When a brightness of at least one of the non-black pixels is lower than the ambient brightness, the processor increases one of the duty cycle and the driving current. When the brightness of at least one of the non-black pixels is still lower than the ambient brightness after adjustment, the processor increases another one of the duty cycle and the driving current. When the brightness of at least one of the non-black pixels is still lower than the ambient brightness after adjustment, the processor performs an image processing process for the brightness of the non-black pixels. 1. A projector comprising:a light sensor sensing an ambient brightness;a micromirror device controlled by a duty cycle;a light source controlled by a driving current; anda processor electrically connected to the light sensor, the micromirror device and the light source;wherein the processor receives an image and the image comprises a plurality of non-black pixels; when a brightness of at least one of the non-black pixels is lower than the ambient brightness, the processor increases one of the duty cycle and the driving current; when the brightness of at least one of the non-black pixels is still lower than the ambient brightness after adjustment, the processor increases another one of the duty cycle and the driving current; when the brightness of at least one of the non-black pixels is still lower than the ambient brightness after adjustment, the processor performs an image processing process for the brightness of the non-black pixels according to the ambient brightness and an extreme brightness of the projector, such that the brightness of the non-black pixels is between the ...

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Номер записи: 83
28-05-2020 дата публикации

ANTENNA STRUCTURE

Номер: US20200168997A1
Автор: Cheng Yung-Jen, Liu An-Shyi, Wu Jia-Fong
Принадлежит: PEGATRON CORPORATION

An antenna structure includes an antenna pattern, a ground layer and two microstrip lines. The antenna pattern includes a first portion and a second portion. The first portion is rectangle shape and includes a first, a second, a third and a fourth sides. The second portion protrudes outwardly from the first side and the second side. The ground layer has two slots. Projections of the two slots to the antenna pattern are close to the third and the fourth sides. Projections of the two microstrip lines to the antenna pattern are perpendicular to the third and the fourth sides. Each microstrip line has a first section and a second section. Projection of the second section to the antenna pattern is closer to a center of the first portion than projection of the first section. A width of the first section is greater than a width of the second section. 1. An antenna structure , comprising:an antenna pattern, comprising a first portion and a second portion, the first portion being rectangular and having a first side, a second side, a third side and a fourth side connected in sequence, the second portion extending and protruding outwardly from a corner formed by the first side and the second side;a ground layer, disposed below the antenna pattern and having two slots, respective projections of the two slots projected onto the antenna pattern being close to the third side and the fourth side; andtwo microstrip lines, disposed below the ground layer, respective projections of the two microstrip lines projected onto the antenna pattern being perpendicular to the third side and the fourth side, and respective projections of the two microstrip lines projected onto the ground layer traversing the two slots, each of the two microstrip lines having a first section and a second section in an extending direction, a projection of the second section projected onto the antenna pattern being closer to a center of the first portion than a projection of the first section, and a width of the ...

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Номер записи: 84
16-07-2015 дата публикации

SENSING ELECTRODE OF ENZYME-BASED SENSOR AND METHOD FOR MANUFACTURING THE SAME

Номер: US20150198556A1
Автор: Chang Jeng-Kuei, Lee Sheng-Wei, WANG Chueh-Han, WANG Yi-Chen, WU Jia-Wun
Принадлежит:

The present invention relates to a sensing electrode of an enzyme-based sensor, and the enzyme-based sensor comprising the same can be stably stored at room temperature. The sensing electrode comprises: an electrode substrate and an enzyme sensing layer formed thereon, wherein the enzyme sensing layer comprises sequentially laminated layers of: a first carbon material-nano metal layer containing a carbon material and nano-metal particles; an ionic liquid layer comprising an ionic liquid consisting of a cation and an anion; a second carbon material-nano metal layer containing a carbon material and nano-metal particles; and an enzyme layer. The present invention also provides a method for manufacturing the sensing electrode of an enzyme-based sensor. 1. A sensing electrode of an enzyme-based sensor , comprising:an electrode substrate; andan enzyme sensing layer formed on the electrode substrate, wherein the enzyme sensing layer comprises sequentially laminated layers of:a first carbon material-nano metal layer containing a carbon material and nano-metal particles;an ionic liquid layer comprising an ionic liquid consisting of a cation and an anion;a second carbon material-nano metal layer containing a carbon material and nano-metal particles; andan enzyme layer.2. The sensing electrode of an enzyme-based sensor of claim 1 , wherein the carbon material is selected from the group consisting of: graphene claim 1 , carbon black claim 1 , a multi-wall carbon nanotube claim 1 , a single-wall carbon nanotube claim 1 , activated carbon claim 1 , and a carbon sphere.3. The sensing electrode of an enzyme-based sensor of claim 1 , wherein the nano metal particles are selected from the group consisting of: gold nanoparticles claim 1 , silver nanoparticles claim 1 , platinum nanoparticles and palladium nanoparticles.4. The sensing electrode of an enzyme-based sensor of claim 1 , wherein the cation of the ionic liquid is: N-alkyl-N-alkyl-pyrrolidinium claim 1 , 1-alkyl-3-alkyl ...

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Номер записи: 85
25-09-2014 дата публикации

PORTABLE POWER SUPPLY

Номер: US20140285020A1
Автор: CHEN LI-BANG, WU JIA-YI, YANG TZU-YU
Принадлежит: ZONESKING TECHNOLOGY CO., LTD.

The portable power supply contains a circuit unit and a rechargeable battery. The circuit unit contains a conversion circuit, an AC output port, a DC input/output port, and a coupling port. The rechargeable battery is coupled to the coupling port. The DC electricity stored in the rechargeable battery is delivered to the circuit unit through the coupling port, and then to a first branch and a second branch. Following the first branch, the DC electricity is transformed a pre-determined AC voltage by the conversion circuit, and the AC voltage is delivered to an external electronic device through the AC output port. Following the second branch, the DC electricity is directly delivered to another external electronic device through the DC input/output port. Without connecting the external electronic device, the DC input/output port is capable of connecting to an external DC power source for charging the rechargeable battery. 1. A portable power supply , comprising:at least a circuit unit, each comprising a conversion circuit, at least an AC output port, at least a DC input/output port, and at least a coupling port; andat least a rechargeable battery, each coupled to one of the coupling ports;wherein the DC electricity stored in a rechargeable battery is delivered to a circuit unit through a coupling port, and then to a first branch and a second branch; following the first branch, the DC electricity is transformed a pre-determined AC voltage by a conversion circuit of the circuit unit, and the AC voltage is delivered to a first external electronic device through an AC output port of the circuit unit; following the second branch, the DC electricity is directly delivered to a second external electronic device through a DC input/output port of the circuit unit; and, without connecting the second external electronic device, the DC input/output port is capable of connecting to an external DC power source for charging the rechargeable battery.2. The portable power supply ...

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Номер записи: 86
20-06-2019 дата публикации

METHOD AND DEVICE FOR RECOGNIZING FACIAL EXPRESSIONS

Номер: US20190188458A1
Автор: KANG Hao-Ping, Kao Chih-Chung, WU Jia-Hua, YANG Yao-Chin
Принадлежит:

A method for recognizing face expressions is provided. The method includes: recognizing expression categories of expressions in a plurality of face images and obtaining recognition results between each expression category and another expression category; obtaining similarities between each expression category and another expression category according to the recognition results; classifying the expression categories into a plurality of expression groups according to the similarities; training a first recognition model to classify the expressions in the face images into the expression groups; and training a second recognition model for each of the expression groups to classify the face images in each of the expression group into one of the expression categories. 1. A method for recognizing face expressions , comprising:recognizing expression categories of expressions in a plurality of face images and obtaining recognition results between each expression category and another expression category;obtaining similarities between each expression category and another expression category according to the recognition results;classifying the expression categories into a plurality of expression groups according to the similarities;training a first recognition model to classify the expressions in the face images into the expression groups; andtraining a second recognition model for each of the expression groups to classify the face images in each of the expression groups into one of the expression categories.2. The method for recognizing face expressions as claimed in claim 1 , wherein the similarity between a first expression category and a second expression category is obtained according to a cross entropy between the first expression category and the second expression category.4. The method for recognizing face expressions as claimed in claim 1 , wherein the step of classifying the expression categories into the expression groups according to the similarities further comprises ...

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Номер записи: 87
14-07-2016 дата публикации

SERVICE BROKER FOR COMPUTATIONAL OFFLOADING AND IMPROVED RESOURCE UTILIZATION

Номер: US20160205036A1
Автор: Jia Bin, Liu Ying, Lu E Feng, Shen Yan Rong, Wu Jia, Zhang Zhen
Принадлежит:

Flexible utilization of capacity to provide computing services mediated by a service broker. The service broker receives a request from a first party for assistance with a service workload as well as an indication from a second party of a willingness to provide service. The service broker matches the parties with each other based at least in part on the capacity of the second party to service the service workload of the first party, manages offloading of the service workload from first party to the second party, and manages billing of a workload provider (such as the first party or the first party's customer) for the offloading engagement. 1. A method comprising:receiving, from a service delegatee, an indication of ability to provide service;receiving, from a service delegator, a request for assistance with a service workload;matching the service delegatee with the service delegator based, at least in part, on a capacity of the service delegatee to service the service workload of the service delegator;managing offloading of the service workload from the delegator to the delegatee, including initialization and termination of a service offloading engagement; andmanaging billing of a workload provider for the service offloading engagement;wherein:the above steps are performed without substantial human intervention by computer software running on computer hardware.2. The method of wherein the matching includes consideration of a set of criteria specified by the delegator that the delegatee should meet in order for the delegatee to be matched with the delegator.3. The method of wherein the matching includes consideration of a set of criteria specified by the delegatee that the delegator should meet in order for the delegator to be matched with the delegatee.4. The method of wherein initialization of the service offloading engagement includes managing deployment of a software service pack that enables the delegatee to service the offloaded workload.5. The method of ...

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Номер записи: 88
18-06-2020 дата публикации

ELECTRONIC CIRCUIT FOR AN ELECTROCHEMICAL GAS SENSOR

Номер: US20200191742A1
Автор: Li Guoliang, Liu Fuyin, Majczak Arek, PRATT Keith Francis Edwin, Underhay Ian, Wu Jia
Принадлежит:

Various embodiments disclose an electronic circuit for an electrochemical gas sensor. The electronic circuit comprises a first switching element electrically coupled to a reference terminal of the electrochemical gas sensor and a ground voltage terminal. Further, the electronic circuit comprises a second switching element electrically coupled to a sensing terminal of the electrochemical gas sensor and the ground voltage terminal. In an instance in which the electrochemical gas sensor is powered OFF, the first switching element and the second switching element are configured to electrically couple the reference terminal and the sensing terminal to the ground voltage terminal such that current generated when the sensing electrode and the target gas react while the electrochemical gas sensor is powered OFF flows to the ground voltage terminal and the potential of the reference terminal and the sensing terminal remain the equal. 1. An electronic circuit for an electrochemical gas sensor , the electrochemical gas sensor comprising a reference electrode and a sensing electrode , the sensing electrode configured to react with a target gas to generate a current , the electronic circuit comprising:a first switching element electrically coupled to a reference terminal of the electrochemical gas sensor and a ground voltage terminal; anda second switching element electrically coupled to a sensing terminal of the electrochemical gas sensor and the ground voltage terminal,wherein, in an instance in which the electrochemical gas sensor is powered OFF, the first switching element and the second switching element are configured to electrically couple the reference terminal and the sensing terminal to the ground voltage terminal such that the current generated when the sensing electrode and the target gas react while the electrochemical gas sensor is powered OFF flows to the ground voltage terminal and a potential at the reference terminal and the potential at the sensing terminal ...

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Номер записи: 89
20-07-2017 дата публикации

METHOD AND APPARATUS FOR DATA DEDUPLICATION IN CLOUD BASED STORAGE SYSTEM

Номер: US20170206218A1
Автор: CHIANG CHUNG-HUNG, Jai Ben-Chiao, PANG CHING-TE, WU JIA-HONG
Принадлежит:

A hybrid cloud file system enabling a cloud storage volume with a cache storage utilizing local storage media is provided. Files in the hybrid cloud file system are substantially uploaded and stored into a cloud storage server and presented as no difference as storing in a local storage volume. Portion of the local storage media may be allocated as a cache storage storing files to be accessed locally for accelerate data fetching and processing. Besides uploading, fetching and deleting, deduplication mechanism before uploading and prefetch mechanism during/before data fetch are also provided in the present disclosure. 1. A deduplication method for a cloud based storage system , comprising:by a deduplication component of a client device, generating a first client-side hash value associated with a data object in the client device for a first duplication collision check with respect to information recorded in a hash table;if the first client-side hash value collides with information recorded in the hash table, indicating a potential state of duplication and generating by the deduplication component a second client-side hash value associated with the data object for a second duplication collision check with respect to information recorded in the hash table, wherein the second client-side hash value associated with the data object is generated from a different heuristic than that of the first client-side hash value; andif the first client-side hash value does not collide with respect to the information recorded in the hash table, indicating a non-duplication state and forwarding the data object from the client device to a cloud storage node.2. The deduplication method for a cloud based storage system according to claim 1 , wherein the second client-side hash value associated with the data object comprises a higher computing complexity than that of the first client-side hash value.3. The deduplication method for a cloud based storage system according to claim 1 , further ...

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Номер записи: 90
29-07-2021 дата публикации

SYSTEMS FOR GENERATING AUDIO SIGNALS AND ASSOCIATED METHODS

Номер: US20210232358A1
Автор: Bethurum Benjamin Neal, Wu Jia-Yang
Принадлежит:

The present disclosure is directed to methods, devices, and systems for playing audio signals associated with an electric in vehicle. The method includes, for example, (1) determining a speed of the electric vehicle; (2) receiving, from a memory, a plurality of sound frequency characteristics corresponding to the determined speed of the electric vehicle; and (3) generating an audio signal segment corresponding to the received sound frequency characteristics by a speaker of the electric vehicle. The sound frequency characteristics include a plurality of segments. Each of the segments includes an amplitude of a number of frequency characteristics in a sound produced by a powertrain assembly (e.g., an electric motor) in a speed range. 1. A method for playing audio signals associated with an electric vehicle , the method comprising:determining a speed of the electric vehicle;receiving, from a memory, an audio signal segment corresponding to the determined speed of the vehicle, wherein the audio signal segment is generated from a plurality of sound frequency characteristics, and wherein the sound frequency characteristics correspond to a sound produced by a powertrain assembly; andplaying the audio segment by a speaker of the electric vehicle.2. The method of claim 1 , further comprising:receiving, from the memory, a plurality of sound frequency characteristics corresponding to the determined speed of the electric vehicle, wherein the sound frequency characteristics include a plurality of segments, and wherein each of the segments includes an amplitude of a number of frequency characteristics in the sound produced by the powertrain assembly in the speed range; andgenerating the audio signal segment corresponding to the received sound frequency characteristics.3. The method of claim 1 , wherein the powertrain assembly includes an electric motor.4. The method of claim 1 , further comprising:adjusting an amplitude of the audio signal segment based on the determined speed of ...

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Номер записи: 91
20-07-2017 дата публикации

HYBRID CLOUD FILE SYSTEM AND CLOUD BASED STORAGE SYSTEM HAVING SUCH FILE SYSTEM THEREIN

Номер: US20170208052A1
Автор: CHIANG CHUNG-HUNG, Jai Ben-Chiao, PANG CHING-TE, WU JIA-HONG
Принадлежит:

A hybrid cloud file system enabling a cloud storage volume with a cache storage utilizing local storage media is provided. Files in the hybrid cloud file system are substantially uploaded and stored into a cloud storage server and presented as no difference as storing in a local storage volume. Portion of the local storage media may be allocated as a cache storage storing files to be accessed locally for accelerate data fetching and processing. Besides uploading, fetching and deleting, deduplication mechanism before uploading and prefetch mechanism during/before data fetch are also provided in the present disclosure. 1. A computing device , comprising:a communication element for transmitting data to one or more remote storage servers each having storage capacity allocated to the computing device and for receiving data stored in the allocated storage capacity from the remote storage servers;a non-transitory storage medium;one or more processors;a non-transitory memory; and obtain authentications for one or more authorized cloud storage volumes in the one or more remote storage servers;', 'define one or more hybrid cloud storage volumes each corresponding to the one or more authorized cloud storage volumes; and', 'define a cache storage corresponding to the one or more hybrid cloud storage volumes and allocate a storage capacity in the non-transitory storage medium for the cache storage;, 'a hybrid cloud file system element electrically coupled to the non-transitory storage medium and configured to be executed by the one or more processors, and wherein the hybrid cloud file system element is configured towherein the hybrid cloud file system element is further configured to receive a data unpinning request for first data stored in the cache storage; andwherein the hybrid cloud file system element is further configured to search for an available space defined as spaces storing unpinned data in the cache storage, and write other data to be stored into the available space ...

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Номер записи: 92
20-07-2017 дата публикации

METHOD AND APPARATUS FOR DATA PREFETCH IN CLOUD BASED STORAGE SYSTEM

Номер: US20170208125A1
Автор: CHIANG CHUNG-HUNG, Jai Ben-Chiao, PANG CHING-TE, WU JIA-HONG
Принадлежит:

A hybrid cloud file system enabling a cloud storage volume with a cache storage utilizing local storage media is provided. Files in the hybrid cloud file system are substantially uploaded and stored into a cloud storage server and presented as no difference as storing in a local storage volume. Portion of the local storage media may be allocated as a cache storage storing files to be accessed locally for accelerate data fetching and processing. Besides uploading, fetching and deleting, deduplication mechanism before uploading and prefetch mechanism during/before data fetch are also provided in the present disclosure. 1. A data prefetch method comprising:in a cloud based storage system comprising a cloud service end and a plurality of client devices respectively authorized to access the cloud service end, respectively collecting, from at least a portion of the client devices, data object access information associated there-with;generating a global prefetch plan in accordance with the collected data object access information from the client devices,forwarding, respectively, to the client devices accessing the cloud service end, a custom prefetch plan generated from the global prefetch plan pertaining thereto for causing the respective client device to(i) perform prefetch actions in accordance with the custom prefetch plan, and(ii) selectively generate updated data object access information to be collected to the cloud service end; andselectively adjusting the global prefetch plan in accordance with the respectively updated data object access information collected from the client devices.2. The data prefetch method of claim 1 , wherein the custom prefetch plan in the respective client device is a subset of the global prefetch plan.3. The data prefetch method of claim 1 , wherein the global prefetch plan comprises a prefetch policy that triggers a prefetch action in accordance with a data fetch event in the respective client device claim 1 , wherein the data fetch event ...

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Номер записи: 93
04-08-2016 дата публикации

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Номер: US20160225662A1
Автор: Chang Feng-Yi, Chen Chun-Lung, Chen Yi-Wei, Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Liu Ying-Cheng, Lu Chia-Lin, Wu Jia-Rong, Wu Yi-Kuan
Принадлежит:

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon and an interlayer dielectric (ILD) layer around the gate structure; forming a dielectric layer on the ILD layer and the gate structure; forming an opening in the dielectric layer and the ILD layer; forming an organic dielectric layer (ODL) on the dielectric layer and in the opening; removing part of the ODL; removing part of the dielectric layer for extending the opening; removing the remaining ODL; and forming a contact plug in the opening. 1. A method for fabricating semiconductor device , comprising:providing a substrate having a gate structure thereon and an interlayer dielectric (ILD) layer around the gate structure;forming a dielectric layer on the ILD layer and the gate structure;forming an opening in the dielectric layer and the ILD layer;forming an organic dielectric layer (ODL) on the dielectric layer and in the opening;removing part of the ODL;removing part of the dielectric layer for extending the opening;removing the remaining ODL; andforming a contact plug in the opening.2. The method of claim 1 , further comprising etching back part of the ODL by completely removing the ODL on the dielectric layer and part of the ODL in the opening.3. The method of claim 1 , further comprising performing an isotropic etching process or a wet clean to remove part of the dielectric layer for extending the opening.4. The method of claim 3 , further comprising utilizing SiCoNi for performing the isotropic etching process.5. The method of claim 3 , further comprising utilizing diluted hydrofluoric acid (DHF) for performing the wet clean.6. The method of claim 1 , wherein the dielectric layer comprises silicon oxide.7. The method of claim 1 , wherein the contact plug comprises a trench conductor and a via conductor.8. The method of claim 7 , further comprising performing a planarizing process for removing part of the dielectric ...

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Номер записи: 94
02-08-2018 дата публикации

A DEPTH DISCONTINUITY-BASED METHOD FOR EFFICIENT INTRA CODING FOR DEPTH VIDEOS

Номер: US20180218512A1
Автор: CHAN Shing Chow, WU Jia-fei
Принадлежит: VERSITECH LIMITED

A method for encoding depth map image involves dividing the image into blocks. These blocks are then classified into smooth blocks without large depth discontinuities and discontinuous blocks with large depth discontinuities. In the discontinuous blocks, depth discontinuities are represented by line segments and partitions. Interpolation-based intra prediction is used to approximate and compress the depth values in the smooth blocks and partitions. Further compression can be achieved with of depth-aware quantization, adaptive de-blocking filtering, scale adaptive block size, and resolution decimation schemes. 1. A method for encoding depth map image , comprising the steps of:dividing the image into blocks;classifying the blocks into smooth blocks without large depth discontinuities and discontinuous blocks with large depth discontinuities;representing, in the discontinuous blocks, the depth discontinuities by line segments and partitions; andusing interpolation-based intra prediction to approximate and compress depth values in the smooth blocks and the partitions.2. The method of wherein the partitions are determined based on the function coefficients of a bilinear function.3. The method of further comprising the step of applying one or more of depth-aware quantization claim 1 , adaptive de-blocking filtering claim 1 , a scale adaptive block size claim 1 , and a resolution decimation scheme for adapting to different input image resolution and bit rates.4. A method for a decoding depth map image that has been encoded according to claim 2 , comprising the step of using a multiplier-less realization of the bilinear function to reconstruct the smooth blocks and partitions.5. The method of claim 1 , wherein the blocks are in different sizes.6. The method of claim 2 , wherein the depth values in the partitions are determined based on the functional coefficients.7. The method of further comprising the steps oftracing depth discontinuities in the discontinuous blocks; ...

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Номер записи: 95
18-08-2016 дата публикации

PROCESS FOR PREPARING WATER DISPERSIONS CONTAINING HIGH CONCENTRATION OF NANO/SUBMICRON, HYDROPHOBIC, FUNCTIONAL COMPOUNDS AND WATER DISPERSIONS OBTAINABLE THEREFROM

Номер: US20160235669A1
Автор: CHEN Chung-Jen, CHEN Ru-Yin, CHU Chung-Liang, HUANG Chih-Ping, TSAI Yi-Jie, WU Jia-Jiu
Принадлежит:

The present invention provides a process for preparing a water dispersion containing a high concentration of nano/submicron, hydrophobic, functional compounds. The process is carried out by using a complex stabilizer having an HLB value of about 10 to about 17, comprising lecithin and at least one non-phospholipid selected from polysorbate, sucrose ester, and polyglycerol fatty acid ester; selecting a specific weight ratio of the hydrophobic functional compounds and the stabilizer; and using homogenization technique, media milling technique, and/or centrifugal technique. The water dispersion containing a high concentration of nano/submicron, hydrophobic, functional compound produced by the process of the invention has stable dispersibility and improved bioavailability, and can be applied to the fields of foods and pharmaceuticals. 1. A process for preparing a water dispersion containing a high concentration of nano/submicron , hydrophobic , functional compounds , which comprises the following steps:formulating a complex stabilizer and water into a water solution containing a complex stabilizer, wherein said complex stabilizer has an HLB value of about 10 to about 17 and comprises lecithin and at least one non-phospholipid selected from polysorbate, sucrose ester, and polyglycerol fatty acid ester,incorporating hydrophobic, functional compounds into the water solution containing a complex stabilizer to form a non-homogenously mixed liquid wherein the weight ratio of the hydrophobic, functional compounds to the complex stabilizer is from 2:1 to 10:1,subjecting the non-homogenously mixed liquid to a homogenization pretreatment to form a homogenously mixed liquid,subjecting the homogenously mixed liquid to nano-grade wet grinding to form the water dispersion, andoptionally, subjecting the water dispersion from nano-grade wet grinding to a centrifugal step and collecting the supernatant,provided that the process does not include the step of formulating the water ...

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Номер записи: 96
30-10-2014 дата публикации

METHOD OF FORMING SHALLOW TRENCH ISOLATIONS

Номер: US20140322891A1
Автор: Liang Chia-Jui, Liou En-Chiuan, Tsao Po-Chao, Wu Jia-Rong
Принадлежит:

A method of forming shallow trench isolation structures including the steps of forming a trench in a substrate, filling a first insulating layer in the lower portion of the trench and defining a recess at the upper portion of the trench, forming a buffer layer on the sidewall of the recess, filling a second insulating layer in the recess, and performing a steam annealing process to transform the substrate surrounding the first insulating layer into an oxide layer. 1. A method of forming shallow trench isolation structures , comprising the steps of:forming a trench in a substrate;filling a first insulating layer in the lower portion of said trench and defining a recess at the upper portion of said trench;forming a buffer layer on the sidewall of said recess;filling a second insulating layer in said recess; andperforming a steam annealing process to transform said substrate surrounding said first insulating layer into an oxide layer.2. A method of forming shallow trench isolation structures according to claim 1 , wherein said first insulating layer is filled into said trench by a flowable chemical vapor deposition process.3. A method of forming shallow trench isolation structures according to claim 1 , further comprising the step of performing a chemical mechanical polishing process and/or an etch-back process on said first insulating layer to form said recess.4. A method of forming shallow trench isolation structures according to claim 1 , further comprising the step of performing a chemical mechanical polishing process and/or an etch-back process on said second insulating layer claim 1 , so that the top surface of said second insulating layer is lower than the surface of said substrate.5. A method of forming shallow trench isolation structures according to claim 1 , wherein the step of forming said buffer layer on the sidewall of said recess comprises:forming said buffer layer conformally on said recess; andselectively removing said buffer layer on the bottom of ...

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Номер записи: 97
27-08-2015 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DEVICE MANUFACTURED USING THE SAME

Номер: US20150243663A1
Автор: Huang Chih-Sen, Hung Ching-Wen, Lin Ching-Ling, Wu Jia-Rong
Принадлежит: UNITED MICROELECTRONICS CORP.

A method for manufacturing a semiconductor device and a device manufactured using the same are provided. According to a dual silicide approach of the embodiment, a substrate having a first area with plural first metal gates and a second area with plural second metal gates is provided, wherein the adjacent first metal gates and the adjacent second metal gates are separated by an insulation. A dielectric layer is formed on the first and second metal gates and the insulation. The dielectric layer and the insulation at the first area are patterned by a first mask to form a plurality of first openings. Then, a first silicide is formed at the first openings. The dielectric layer and the insulation at the second area are patterned by a second mask to form a plurality of second openings. Then, a second silicide is formed at the second openings. 1. A method for manufacturing a semiconductor device , comprising:providing a substrate having a first area with plural first metal gates and a second area with plural second metal gates, wherein the adjacent first metal gates and the adjacent second metal gates are separated by an insulation;capping a dielectric layer on the first and second metal gates and the insulation;patterning the dielectric layer and the insulation at the first area by a first mask to form a plurality of first openings;forming a first silicide at the first openings;patterning the dielectric layer and the insulation at the second area by a second mask to form a plurality of second openings; andforming a second silicide at the second openings.2. The method according to claim 1 , wherein the first silicide is different from the second silicide.3. The method according to claim 1 , wherein the step of forming the first silicide comprises:depositing a Ti containing layer at the substrate and within the first openings;subjecting the substrate with the first openings to a first thermal treatment to form a Ti containing portion as the first silicide; andremoving an ...

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Номер записи: 98
18-08-2016 дата публикации

SEMICONDUCTOR STRUCTURE HAVING A CENTER DUMMY REGION

Номер: US20160240540A1
Автор: Chen Yi-Wei, Huang Chih-Sen, Hung Ching-Wen, LEE Yi-Hui, Wu Jia-Rong
Принадлежит:

A semiconductor structure is provided, including a substrate, a plurality of first semiconductor devices, a plurality of second semiconductor devices, and a plurality of dummy slot contacts. The substrate has a device region, wherein the device region includes a first functional region and a second functional region, and a dummy region is disposed therebetween. The first semiconductor devices and a plurality of first slot contacts are disposed in the first functional region. The second semiconductor devices and a plurality of second slot contacts are disposed in the second functional region. The dummy slot contacts are disposed in the dummy region. 1. A semiconductor structure , comprising:a substrate with a device region, wherein the device region is a memory region, wherein the device region comprises a first functional region and a second functional region, and a dummy region is disposed therebetween, wherein the first functional region is a memory cell region;a plurality of first semiconductor devices and a plurality of first slot contacts disposed in the first functional region, wherein a plurality of fin structures stretching along a first direction and a plurality of gate structures stretching along a second direction are disposed in the first functional region, intersecting with each other, thereby forming the plural first semiconductor devices;a plurality of second semiconductor devices and a plurality of second slot contacts disposed in the second functional region; anda plurality of dummy slot contacts disposed in the dummy region.2. The semiconductor structure according to claim 1 , further comprising a plurality of dummy gate structures stretching along a first direction and disposed in the dummy region.3. The semiconductor structure according to claim 2 , wherein the dummy slot contacts and the dummy gate structures are arranged alternatively.4. The semiconductor structure according to claim 1 , wherein the dummy slot contacts that are closest to the ...

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Номер записи: 99
25-07-2019 дата публикации

LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20190229173A1
Автор: CHEN Cheng-Hsin, Wang Chun-Hsiung, Wu Jia-Wei
Принадлежит:

A light emitting device includes a transistor and the transistor has a gate layer, and a dielectric under the gate layer. The light emitting device also includes a capacitor coupled to the transistor The capacitor including a first electrode, a second electrode over the first electrode, and a dielectric between the first and second electrode. The tight emitting device further includes a contact dielectric seprataing the transistor and the capacitor. The dielectric fully surrounds the capacitor and the transistor, wherein the contact dielectric is nitrogen free. 1. A light emitting device , comprising:a light emitting diode;a transistor electrically coupled to the light emitting diode, the transistor including a source/drain; anda conductive plug including one end landing on the source/drain and the other end coupled to the light emitting diode, wherein a contact area between the conductive plug and the source/drain is less than 1 um by 1 um.2. The light emitting device in claim 1 , wherein the conductive plug is surrounded by a homogeneous dielectric.3. The light emitting device in claim 1 , wherein the tight emitting diode is an organic light emitting diode.4. The light emitting device in claim 1 , wherein the light emitting diode is in an light emitting array claim 1 , the light emitting array has a pixel density being greater than 800 ppi.5. The light emitting device in claim 1 , wherein the conductive plug has an aspect ratio greater than about 0.7.6. The light emitting device in claim 1 , wherein the source/drain has a metal silicide interfaced with the conductive plug.7. The light emitting device in claim 1 , wherein the transistor includes a gate layer and a channel layer under the gate layer claim 1 , wherein the source/drain is on one end of the channel layer.8. The light emitting device in claim 7 , wherein a thickness of the channel layer is non-uniform claim 7 , a central portion of the channel layer is a mesa protruding to a level higher than the source ...

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Номер записи: 100