31-01-2019 дата публикации
Номер: US20190035693A1
Принадлежит:
A semiconductor structure and fabrication method are provided. The method includes: providing a base substrate; forming doped epitaxial layers in the base substrate on sides of a gate structure on the base substrate; forming an interlayer dielectric layer over the base substrate and above the doped epitaxial layers; forming a contact opening in the interlayer dielectric layer; forming a dielectric layer on and surrounding each doped epitaxial layer; applying a repairing process on the dielectric layer; after the repairing process, forming a metal layer on the dielectric layer; and after forming the metal layer in the contact opening, forming a conductive plug in the contact opening. 1. A fabrication method of a semiconductor structure , comprising:providing a base substrate;forming a first doped epitaxial layer and a second doped epitaxial layer in the base substrate, each of the first and second doped epitaxial layers corresponding to a different gate structure on the base substrate;forming an interlayer dielectric layer over the base substrate and above the first and second doped epitaxial layers;forming a contact opening in the interlayer dielectric layer to expose the first and second doped epitaxial layers and a portion of the base substrate;forming a dielectric layer on and surrounding each of the first and second doped epitaxial layer;applying a repairing process on the dielectric layer;after the repairing process, forming a metal layer on the dielectric layer; andafter forming the metal layer in the contact opening, forming a conductive plug in the contact opening.2. The method according to claim 1 , wherein:{'sub': 2', 'x', 'x', 'y', 'x', '2', '2', '2', '2', '2', '3, 'the dielectric layer is made of SiO, SiN, SiNO, GeN, GeO, TiO, CoO, NiO, AlO, or a combination thereof.'}3. The method according to claim 1 , wherein:the dielectric layer is formed by one or more of a chemical oxidization process, a thermal oxidization process, a chemical vapor deposition ...
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