10-05-2012 дата публикации
Номер: US20120113768A1
A heat-assisted magnetic recording medium that includes a substrate , underlayers formed on the substrate , and a magnetic layer which is formed on the underlayers and contains either an FePt alloy having an Lstructure or a CoPt alloy having an Lstructure as a main component, wherein the underlayers include a first underlayer formed from an amorphous alloy, a second underlayer formed from an alloy having a BCC structure containing Cr as a main component and also containing at least one element selected from among Ti, Mo, W, V, Mn and Ru, and a third underlayer formed from MgO. Also, a magnetic storage device that uses the heat-assisted magnetic recording medium. 1. A heat-assisted magnetic recording medium comprising a substrate , underlayers formed on the substrate , and a magnetic layer which is formed on the underlayers and comprises either an FePt alloy having an L1structure or a CoPt alloy having an L1structure as a main component , whereinthe underlayers comprise a first underlayer formed from an amorphous alloy, a second underlayer formed from an alloy having a BCC structure containing Cr as a main component and also containing at least one element selected from among Ti, Mo, W, V, Mn and Ru, and a third underlayer formed from MgO.2. A heat-assisted magnetic recording medium comprising a substrate , underlayers formed on the substrate , and a magnetic layer which is formed on the underlayers and comprises either an FePt alloy having an L1structure or a CoPt alloy having an L1structure as a main component , whereinthe underlayers comprise a first underlayer formed from an amorphous alloy, and a second underlayer formed from an alloy having a BCC structure containing Cr as a main component and also containing at least one element selected from among Ti, Mo, W, V, Mn and Ru.3. The heat-assisted magnetic recording medium according to claim 1 , wherein the second underlayer further comprises at least one element selected from among B claim 1 , C and Si.4. The heat ...
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