SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR MANUFACTURING SAME

Provided is a semiconductor memory structure and a method for manufacturing the same, relating to the technical field of micro-electronic devices. The semiconductor memory performs, for example, erase operation and read operation control on a phase change memory or a resistive random access memory using a tunnelling field effect transistor. On one hand, the forward bias p-n junction current of the tunnelling field effect transistor can measure up to the feature that the phase change memory or the resistive random access memory requires a relatively large current to carry out the erase operation; on the other hand, the field effect transistor of a vertical structure can greatly increase the density of the memory device array. The semiconductor memory structure is manufactured using the self-aligning process, which is suitable for manufacturing memory chips.

ARRAY STRUCTURE OF DYNAMIC RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME

An array structure of a dynamic random access memory (DRAM) is provided. As for the array structure of the DRAM, vertical MOS field effect transistors are used as array devices of the DRAM. The structure has a metal silicide buried layer (206) as a buried layer bit line for connecting multiple continuous vertical MOS field effect transistor array devices. Each of the vertical MOS field effect transistor array devices is provided with a buried layer metal double-gate structure which serves as a buried layer word line of the array structure of the DRAM. The structure can improve the integration density of the DRAM, reduce resistivity of the buried layer bit line and enhance the storage performance of the array devices. A method for fabricating the array structure of the DRAM is also provided.

ULTRA-LONG SEMICONDUCTOR NANOWIRE STRUCTURE AND MANUFACTURING METHOD THEREFOR

Disclosed is an ultra-long semiconductor nanowire structure. The width of the ultra-long semiconductor nanowire is widened at intervals, thus preventing the ultra-long semiconductor nanowire structure from rupturing. Also disclosed is a method for manufacturing the ultra-long semiconductor nanowire structure. In the method, the ultra-long semiconductor nanowire structure having width thereof widened at intervals is formed via lithography and etching. The width of the ultra-long semiconductor nanowire structure is widened at intervals, thus preventing the ultra-long semiconductor nanowire structure from rupturing during the etching process, and facilitating the formation of the ultra-long, ultrafine semiconductor nanowire structure.

ULTRA-LOW DIELECTRIC CONSTANT INSULATING FILM AND METHOD FOR MANUFACTURING SAME

An ultra-low dielectric constant insulating film and a method for manufacturing same are disclosed. The method comprises: step 1, depositing a thin film by a technology of plasma enhance chemical vapor deposition, MTES and LIMO used as reaction source and helium used as carrier gas being led into a chemical vapor deposition reaction cavity, wherein, the insulating film formed by deposition has a thickness of 50-100 nm, and the flow ratio of the MTES and the LIMO is equal to 1:1 - 1:2.5; step 2, conducting in-situ remediation on the surface of the insulating layer by using Ar plasma to form a compact modified layer; step 3, repeating step 1 and step 2 to obtain the insulating film of target thickness; step 4, annealing the insulation film at high temperature to form ultra-low dielectric constant insulating film. Alternative plasma used for enhancing the chemical vapor deposition of the insulating film and post-plasma processing are creatively used in the invention with simply process and ...

瓶子

瓶盖

饮料瓶（魔水师葡萄城堡汽水）

蚊帐支架三通

Portable multi -functional oil storage tank

... 本实用新型涉及种便携式多功能储油罐，其包括有固定于外壳箱体内部的储油罐本体，该外壳箱体的底部设有滚轮，所述外壳箱体内设有固定安装的油泵和控制油泵运行的控制箱，所述油泵的进油口与储油罐的出油口直接相连，所述油泵的出油管盘绕于油管绞盘上，该油管绞盘固定于移动支架Ⅱ上，所述控制箱通过电缆连接油泵和外部电源并构成回路，所述控制箱与外部电源连接的电缆是盘绕于电缆绞盘上的，所述电缆绞盘固定于移动支架Ⅰ上，所述外壳箱体内还设有固定安装于储油罐上的除湿装置和油位计；本实用新型实现了储油罐、油泵等工器具的体式设计，节省了作业时间，降低了作业难度，外壳箱体即可对储油罐和油泵起到保护作用又方便了储油罐的移动。 ...

Device fault intelligent detection method and system based on audio characteristics

The invention provides an equipment fault intelligent detection method and system based on audio characteristics, and belongs to the technical field of fault detection, and the method comprises the steps: obtaining an audio signal of electrical equipment in operation; extracting a Mel-frequency cepstrum coefficient in the audio signal; matching by adopting a dynamic time warping algorithm to obtain a characteristic value of the audio signal corresponding to the Mel-frequency cepstrum coefficient; and judging whether the electrical equipment has a fault according to the matched characteristic value, and outputting a fault detection result. The method has the beneficial effects that the Mel-frequency cepstrum coefficient is extracted from the collected audio signal of the electrical equipment, and then the characteristic value of the audio signal is matched by using the dynamic time warping algorithm, so that whether the electrical equipment breaks down or not is judged, the intelligent fault ...

System and method for transmitting underground big data

The invention discloses a system and method for transmitting underground big data, and the system comprises a drill rod hoisting short section which is disposed between a drill rod and a measurement-while-drilling short section, and is used for limiting the upper end part of a data transfer bin when the data transfer bin moves underground along a drill rod water hole along with slurry and passes through a water hole area in the data transfer bin, enabling the lower end part of the data transfer bin to enter an internal water hole area of the measurement-while-drilling short section; the measurement-while-drilling short section is used for collecting measurement-while-drilling data at the position where a drill bit arrives in real time in the measurement-while-drilling process; and the data transfer bin communicates with the measurement-while-drilling short section in a limited state and is used for reading and storing the measurement-while-drilling data and then returning to the ground ...

SEMI-FLOATING GATE DEVICE AND MANUFACTURING METHOD THEREFOR

A semi-floating gate device, comprising at least one semiconductor substrate (200), a source region (201), a drain region (202), a floating gate (205), a control gate (207), a vertical channel region (401) and a gate-controlled p-n junction diode which is used for connecting the floating gate (205) and the drain region (202). The semi-floating device uses the floating gate to store information, charges or discharges the floating gate through the gate-controlled p-n junction diode, and has the advantages of small unit area, high chip density, low operation voltage when storing data, strong data retention capability, and the like.

Microgrid protection method and microgrid protection device

The invention discloses a micro-grid protection method and a micro-grid protection device. The micro-grid protection method comprises the following steps: respectively carrying out variational mode decomposition on first operation data and second operation data of a micro-grid to generate a first feature for detecting a fault of the micro-grid and a second feature for positioning the fault of the micro-grid; detecting the fault of the microgrid by inputting a first feature to a support vector machine model configured to detect the fault of the microgrid; and locating the fault of the micro-grid by inputting the second characteristic, a result of detecting the fault of the micro-grid, and a state of the circuit breaker into a long-short-term memory model configured to locate the fault of the micro-grid.

Small-end inclined plane center thickness detection device for engine connecting rod production

The utility model provides a small head inclined plane center thickness detection device for engine connecting rod production, comprising a detection bench, a positioning assembly, a calibration block and a dial indicator, the positioning assembly comprises a small head positioning seat and a large head positioning seat, the dial indicator is vertically arranged on a connecting rod, and one end of the connecting rod is provided with a fine tuning assembly. The other end of the connecting rod is arranged on the moving assembly, the moving assembly is movably arranged on the guide rail, limiting columns used for limiting the moving assembly are arranged at the two ends of the guide rail, and the large-head positioning base comprises a large-head base plate, a first protrusion and a second protrusion. According to the device, the dial indicator can continuously move between the calibration block and the workpiece through the moving assembly and the guide rail, and the position of the dial ...

Trimming equipment for furniture composite board production

The invention discloses trimming equipment for furniture composite board production. The trimming equipment comprises a processing frame, a placing groove is formed in the top of the processing frame, a pushing frame is arranged at the upper end of the placing groove, a protection device is arranged on the upper right portion of the pushing frame, a collecting groove is formed in the surface of the placing groove, and a knocking device is arranged in the collecting groove. A machining device is arranged at the right end of the machining frame, the protection device comprises a fixing frame, the inner wall of the fixing frame is fixedly connected with the surface of the machining frame, the fixing frame does not make contact with the pushing frame, and the right end of the fixing frame is arranged above the collecting tank. According to the machining device, the connector blocks chippings generated by machining when the machining device conducts trimming treatment on a plate, so that the ...

AGV charging system

... 本实用新型公开了一种AGV充电系统，包括机械手装置、拖链电缆、AGV；拖链电缆的一端固定，另一端为自由端，设置有插头；AGV包括主控单元、定位单元、第一通信单元、充电电池、与充电电池连接的插座，定位单元采集方位信息，并发送至主控单元，主控单元输出的控制信号通过第一通信单元发送至机械手装置，控制机械手装置动作。本实用新型的AGV充电系统，利用AGV作业时为AGV充电，无需专门停车换电或耗时间充电，实现即时充电，提高了AGV的利用率；而且浅充浅放可以最大程度延长AGV电池的使用寿命，降低了维修更换电池的成本；由于无需备用电池以及建设换电站，降低了投资成本，提高了经济效益。 ...

Traditional Chinese medicine composition for treating spleen-kidney yang deficiency type foot ostealgia and preparation method thereof

The invention discloses a traditional Chinese medicine composition for treating spleen-kidney yang deficiency type foot bone pain. The traditional Chinese medicine composition is prepared from the following raw materials in parts by weight: 10-20 parts of fructus alpiniae oxyphyllae, 5-15 parts of curcuma zedoary, 5-15 parts of rhizoma sparganii, 10-20 parts of rhizoma drynariae, 10-20 parts of motherwort, 5-15 parts of corydalis tuber, 5-15 parts of honeysuckle stem, 5-15 parts of leech, 5-15 parts of akebia stem, 5-15 parts of mulberry twig, 10-20 parts of folium artemisiae argyi, 5-15 parts of garden balsam stem, 5-15 parts of safflower, 5-15 parts of lycopodium clavatum and 5-15 parts of angelica sinensis. The traditional Chinese medicine can tonify kidney and enrich blood, induce diuresis to alleviate edema and activate blood circulation to dissipate stasis, and has an obvious effect on treating spleen-kidney yang deficiency type foot ostealgia.

Preparation method of dielectric layer, dielectric layer, device and preparation method of device

The invention provides a preparation method of a dielectric layer, the dielectric layer is formed in a GaN HEMT power device, and the preparation method comprises the following steps: providing a sample to be processed; the surface of the to-be-treated sample comprises a medium growth region; growing a dielectric layer with a first thickness in the dielectric growth area; bombarding the surface of the dielectric layer by using argon plasma; the argon plasma is used for bombarding the surface of the dielectric layer to destroy the first chemical bond in the dielectric layer; repeating the two steps for N-1 times until a dielectric layer with a second thickness grows; wherein the dielectric layer with the first thickness grown each time is formed on the surface of the dielectric layer grown last time; n is a positive integer greater than or equal to 1. According to the technical scheme, the problem of how to achieve low-defect growth of the dielectric film is solved, the current collapse ...

AUTOMATED CONTAINER HANDLING DOCK

An automated container handling dock, sequentially provided with, from a land side to a sea side, a gate, a container stack yard (300), an intra-yard transport vehicle operating area (400), and an overhead crane operating area (500). The container stack yard (300) is arranged in a direction perpendicular to the shoreline (600). A side of the stack yard adjacent to the shoreline (600) is provided with a sea-side exchange area (330), and a side away from the shoreline (600) is provided with a land-side exchange area (310). The invention completely separates the path of an off-yard transport vehicle from the path of an intra-yard transport vehicle, and avoids issues such as traffic congestion in a yard and a forced interruption of an operation process due to path intersection of the two types of vehicles. In addition, a back-end system automatically controls a track crane and the intra-yard transport vehicle to perform container handling operations and ship loading and unloading operations ...

METAL-SEMICONDUCTOR COMPOUND THIN-FILM AND DRAM MEMORY CELL AND MANUFACTURING METHOD THEREFOR

Disclosed is a metal-semiconductor compound thin-film. Formed between a semiconductor layer and a polycrystalline semiconductor layer, the metal-semiconductor compound thin-film has a thickness between 2 to 5 nm, thus improving contact between the semiconductor layer and the polycrystalline semiconductor layer. Also disclosed is a DRAM memory cell. A drain region of an MOS transistor within the memory cell and the polycrystalline semiconductor buffer layer are provided therebetween with the metal-semiconductor compound thin-film, the thickness thereof being 2 to 5 nm, thus when the read and write speeds of the transistor is increased, excessive increase of a leakage current between the drain region and a silicon substrate is prevented. At the same time, also disclosed is a method for manufacturing the DRAM memory cell. In the DRAM cell formed using the method, the metal-semiconductor compound thin-film is formed between the drain region of the MOS transistor and the polycrystalline semiconductor ...

Preparation method of (2S, 4R)-1-(t-butyloxycarbonyl)-4-(t-butyldimethylsiloxy)-2-methylpyrrolidine-2-carboxylic acid

The invention belongs to the technical field of medical intermediates, and particularly relates to a preparation method of (2S, 4R)-1-(t-butyloxycarbonyl)-4-(t-butyldimethylsiloxy)-2-methylpyrrolidine-2-carboxylic acid. According to the preparation method of the (4R)-1-(t-butyloxycarbonyl)-4-(t-butyldimethylsiloxy)-2-methylpyrrolidine-2-carboxylic acid, Boc-L-trans-hydroxyproline is taken as an initial raw material, and a finished product is obtained through four steps of reaction including methyl esterification reaction, TBS protection reaction, methylation reaction and demethylation esterification reaction. The preparation method of the (2S, 4R)-1-(t-butyloxycarbonyl)-4-(t-butyldimethylsiloxy)-2-methylpyrrolidine-2-carboxylic acid provided by the invention is a brand new preparation method, and has the advantages of safety, environmental protection and easiness in large-scale production.

Digital design management platform and management and control method thereof

The invention discloses a digital design management platform and a management and control method thereof, and belongs to the technical field of digital design management, the digital design management platform comprises a document module, a data integration module and a model module, the document module comprises an entity document and a corresponding workflow, the entity document is connected with the data integration module through a network, and the workflow is connected with the data integration module; the data integration module carries out data interaction with professional digital design software, the professional digital design software comprises a calculation module and an arrangement module, the arrangement module issues data to the model module, and the model module arranges and optimizes the data and issues the data to the outside. The method can effectively reduce the usage amount of paper, is more environment-friendly, reduces the waste of manpower in the design process, ...

TOUCH CONTROL SUBSTRATE, DISPLAY PANEL AND DISPLAY APPARATUS

Disclosed are a touch control substrate, a display panel and a display apparatus. The touch control substrate comprises: a substrate, and an electrode layer provided on the substrate. The electrode layer comprises at least two electrodes. Each of the electrodes comprises at least one sub-electrode. The sub-electrode has an electrode unit array comprising at least two columns of electrode units. Any two columns in the electrode unit array do not intersect with each other. Each of the columns in the electrode unit array comprises the at least two electrode units connected in series, and any two adjacent columns in the electrode unit array are connected to each other in parallel by means of a connection portion.

AGV charging system based on slide -wire

... 本实用新型公开了一种基于滑线的AGV充电系统，包括AGV和布设在作业区一侧的滑线；AGV包括充电电池、主控单元、定位单元、驱动单元、伸缩机构、车载滑车；定位单元采集方位信息，并发送至主控单元，主控单元输出控制信号至驱动单元，驱动单元驱动伸缩机构运动，伸缩结构带动车载滑车伸出/缩回；当车载滑车伸出时，与滑线对接，滑线提供的电能通过车载滑车传输至充电电池；当车载滑车缩回时，与滑线分离。本实用新型的基于滑线的AGV充电系统，利用AGV作业时为AGV充电，无需专门停车换电或耗时间充电，提高了AGV的利用率；而且浅充浅放延长了充电电池的使用寿命；由于无需备用电池以及建设换电站，降低了投资成本。 ...

Split-gate silicon carbide device with buried field limiting ring and preparation method of split-gate silicon carbide device

The invention discloses a split-gate silicon carbide device with a buried field limiting ring and a preparation method of the split-gate silicon carbide device. The device sequentially comprises a drain electrode, a drift region and a P well region from bottom to top, and further comprises a U-shaped groove penetrating through the P well region, the buried P-type field limiting ring is formed on the periphery of the bottom of the groove; the P + region and the N + region are connected with each other and are formed on the P well region on the two sides of the trench; the grid electrode is formed in the groove and comprises a transistor grid electrode located on the outer side and a field limiting ring contact bolt located in the middle area, the transistor grid electrode is wrapped by an oxide layer, the top of the field limiting ring contact bolt is connected with the source electrode, and the bottom of the field limiting ring contact bolt is connected with the buried P-type field limiting ...

Preparation method of inner side wall groove, inner side wall, electronic equipment and preparation method

The invention provides a preparation method of an inner side wall groove. The preparation method comprises the following steps: providing an object to be etched; the object to be etched comprises a substrate, and a plurality of channel layers and a plurality of sacrificial layers which are formed on the substrate and stacked at intervals in the direction away from the substrate; etching the object to be etched along the first direction until the surface layer of the substrate to form a source-drain cavity; etching a sacrificial layer in the to-be-etched object along a second direction to form an inner side wall cavity; wherein the first direction represents the stacking direction of the plurality of channel layers and the plurality of sacrificial layers; the second direction is perpendicular to the first direction; wherein when the sacrificial layer is etched along the second direction, the etching rate is 0.05 nm/s to 0.3 nm/s. According to the technical scheme provided by the invention ...

While-drilling anti-vibration gamma detector

The while-drilling anti-vibration gamma detector comprises an anti-vibration outer cylinder, a protruding ring is arranged in the middle of the inner side of the anti-vibration outer cylinder, and the inner space of the anti-vibration outer cylinder is divided into an anti-vibration crystal installation cavity and an anti-vibration photomultiplier installation cavity through the protruding ring; the anti-vibration crystal is mounted in the anti-vibration crystal mounting cavity; the anti-vibration photomultiplier is mounted in the anti-vibration photomultiplier mounting cavity; and the optical coupling pad is arranged in the protruding ring. According to the invention, the crystal and the photomultiplier are coupled with each other and can independently bear the vibration force, so that the operation reliability of the gamma detector while drilling in a high-intensity vibration environment is improved.

GRID-CONTROL PN FIELD EFFECT TRANSISTOR AND CONTROLLING METHOD THEREOF

A grid-control positive-negative (PN) field effect transistor (200) is provided. The grid-control PN field effect transistor (200) includes a semiconductor substrate region (203), a source region (201) and a drain region (202) located on a left side and a right side of the substrate region (203), grid regions (206,207) located on an upper side and a lower side of the substrate region (203). The grid-control PN field effect transistor (200) reduces leak current and simultaneously increases driving current, thus increases chip performance without increasing power consumption of the chip. A controlling method of the grid-control PN field effect transistor (200) is also provided.

Vision-assisted color analysis and detection method for coating production sample

The invention relates to the technical field of image data processing, in particular to a vision-assisted coating production sample color analysis and detection method, which comprises the following steps: acquiring a bubble region and a wrinkle region in a coating image, and analyzing and acquiring a coating bubble coverage rate corresponding to the bubble region in a grid window, and obtaining a paint color quality estimation index by combining the corresponding angular points of the paint RGB image under different color channels according to the color information and the wrinkle leveling non-uniformity corresponding to the wrinkle region and in combination with the corresponding angular points of the paint RGB image under different color channels. According to the method, the cost of color analysis and detection is reduced by combining a computer vision technology, meanwhile, the color quality of a coating production sample is rapidly and conveniently analyzed and detected according ...

Multi-stage square groove and square tube sheet metal welding structure DD suspended beam welding positioning tool and deformation control method thereof

The invention relates to the field of welding of DD emitting devices, in particular to a DD suspended beam welding positioning tool of a multistage square groove and square tube metal plate welding structure and a deformation control method thereof.The DD suspended beam welding positioning tool comprises square steel, a plurality of sets of inner restraining pieces, a plurality of sets of outer restraining pieces and a positioning pin, and the method comprises the steps that S1, a symmetry axis design benchmark entity is converted; s2, the components are assembled on the square steel according to the designed sequence; s3, welding is conducted; s4, carrying out destressing treatment; in the welding process, welding seams are symmetrically numbered, the welding seams on the left side of the square steel are numbered as 1A, 2A, 3A,..., the welding seams on the right side of the square steel are numbered as 1B, 2B, 3B,..., the welding seams are symmetrically welded according to the sequence ...

LOW-DIELECTRIC CONSTANT DIELECTRIC AND COPPER INTERCONNECT STRUCTURE AND INTEGRATION METHOD THEREOF

A low-dielectric constant dielectric and a copper interconnect structure and an integration method thereof are provided. The copper interconnect is combined with an air gap to reduce capacitance. Supporting structures(401,402) are used to support copper wires(104) to keep the form of the copper wires(104) after the dielectric is removed. The advantages are implementing the full air gap structures (210,211,212) of the longer wire, avoiding short-circuit or disconnection of the copper wires(104), and reducing resistor-capacitor(RC) delay.

TOUCH PANEL AND PREPARATION METHOD THEREFOR, AND CORRESPONDING TOUCH APPARATUS

The present disclosure provides a touch panel and a preparation method therefor, and a corresponding touch apparatus. The touch panel comprises: a substrate; a patterned first metal layer located on the substrate, the first metal layer comprising a plurality of first touch electrode areas and a plurality of wiring areas located between adjacent first touch electrode areas; an insulating layer covering the first metal layer; and a second metal layer located on the insulating layer, the second metal layer comprising a plurality of second touch electrode areas, and an orthographic projection of each second touch electrode area on the substrate overlapping an orthographic projection of one wiring area on the substrate.

Engine pedestal

... 本实用新型提供了一种发动机台架，发动机台架包括：底板；第一支撑组件和第二支撑组件，第一支撑组件和第二支撑组件在底板上并列设置；支撑板，支撑板设置在第一支撑组件上且用于与机体相连，支撑板上设置有用于避让发动机的飞轮的避让通孔；支撑梁，支撑梁关于支撑板对称设置，每个支撑梁的一端连接在支撑板上且另一端连接在第二支撑组件上，每个支撑梁上设置有支撑梁滑动槽；支撑架，支撑架安装在支撑梁上以用于与悬置支架相连，支撑架在解锁状态时可在支撑梁滑动槽内滑动且在锁止状态时被定位在支撑梁滑动槽内。通过设置支撑梁滑动槽和支撑架，可以缩短发动机安装在发动机台架上的时间，可以简化发动机安装在发动机台架的过程。 ...

Method for evaluating fault dynamic stability of oil and gas reservoir type gas storage under alternating load

The invention relates to the technical field of safety evaluation engineering, in particular to an oil and gas reservoir type gas storage fault dynamic stability evaluation method under alternating load. Establishing a relation model between the operation cycle of the gas storage and the cohesion in the rock and a relation model between the operation cycle of the gas storage and the friction angle in the rock; establishing a limit operation pressure calculation model based on the two relation models; establishing a gas storage limit operation pressure calculation model based on the fault mud friction coefficient of the target gas storage; and by using the two calculation models, according to the maximum principal stress and the minimum principal stress, calculating gas storage fault shear fracture failure pressure-bearing ultimate pressure and friction sliding failure pressure-bearing ultimate pressure at different inclination angles in different operation periods, and evaluating the dynamic ...

Unity-based three-dimensional model lightweight method

The invention relates to a lightweight method, in particular to a Unity three-dimensional model-based lightweight method, belongs to the technical field of BIM (Building Information Modeling) digital design, and specifically needs the processes of digital-analog separation, model lightweight and rendering, data cleaning and arrangement, software secondary development and uploading to an intelligent power plant digital engineering platform. A model scene reconstruction mode is adopted in the model lightweight and rendering process, and the model scene reconstruction mode comprises the steps that firstly, a BIM model is analyzed and simplified, the name category of the original BIM model is allocated to a processing sub-process to be processed, scene reconstruction is conducted on the BIM model after processing is completed, and a strategy is made to conduct geometric figure simplification on the BIM model; decomposing the engineering related content into a plurality of dimensions and a plurality ...

Thin film transistor for realizing threshold voltage regulation and preparation method thereof

The invention discloses a thin film transistor for realizing threshold voltage regulation and a preparation method thereof, and the preparation method comprises the steps: providing a substrate, and forming a two-dimensional material thin film layer on the substrate; performing doping of a first doping type on the two-dimensional material thin film layer; forming a channel region formed by the doped two-dimensional material thin film layer on the substrate to form a thin film transistor; wherein when doping is carried out on the two-dimensional material thin film layer, pre-adjustment of the threshold voltage of the formed thin film transistor is achieved by controlling the doping amount. The preparation process is simple and stable, is beneficial to doping of various large-area two-dimensional material film layers, is compatible with a CMOS (complementary metal oxide semiconductor) process, and is beneficial to large-scale mass production.

Self-refresh power consumption analysis method of semiconductor memory device

The invention provides a self-refreshing power consumption analysis method of a semiconductor storage device, and relates to the technical field of semiconductors. The semiconductor storage device comprises a storage array arranged according to rows and columns. The method comprises the following steps: when the semiconductor storage device is in a refresh mode, testing to obtain a total refresh command sending frequency of refreshing a storage array, and taking the total refresh command sending frequency as a total refresh command sending frequency of refreshing the storage array when the semiconductor storage device is in a self-refresh mode; when the semiconductor storage device is in the self-refreshing mode, the self-refreshing total duration after the storage array is refreshed is tested and obtained, and the analysis result of the self-refreshing power consumption of the semiconductor storage device in the self-refreshing mode is obtained according to the total refreshing command ...

Method and device for improving image quality of projector

The invention discloses a method for improving image quality of a projector, which comprises the following steps of: converting image data output by the projector into a contrast modulation signal of an image, and adjusting light intensity according to the contrast modulation signal of the image. The invention further discloses a device for improving the image quality of the projector, the device comprises a light source, a contrast modulation module, an image output control module, a processing module and an optical imaging module, and the image output control module is used for inputting image data to the processing module; the processing module is used for calculating an image contrast modulation signal according to the image data, and the image contrast modulation signal is input to the contrast modulation module; and the contrast modulation module is used for modulating the light of the light source according to the image contrast modulation signal and then projecting and imaging through ...

ENCODING, RECONSTRUCTING, AND RECOVERING METHODS USED FOR SELF-REPAIRING CODE STORED BY DISTRIBUTED NETWORK

The present invention relates to an encoding method used for a self-repairing code stored by a distributed network, comprising the following steps of: setting a basic finite field Fq, and obtaining a first finite field being Equation (I); obtaining a second finite field being Equation (II), Fq⊆Equation (I)⊆Equation (II); dividing, in a form of a coset being Equation (III), a space represented by the second finite field being Equation (II) into sub-spaces with the number being Equation (IV); respectively selecting t+1 basic vectors from basic vectors represented by elements of the basic finite field of each sub-space to be used as encoding vectors of one storage node, the storage node being corresponding to the sub-space, and the encoding vector being corresponding to a position of an encoding data block in a storage file; and obtaining the encoding data block on the corresponding position in the storage file according to the encoding vector of each storage node, and storing the encoding ...

FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

An asymmetric type field effect transistor and a manufacturing method thereof are provided. The field effect transistor comprises: a semiconductor substrate（101）; a gate stacking structure; side-walls （315），a source region and a drain region（406）；and shallow trench isolations（102）. The gate stacking structure includes a gate dielectric layer（203）formed on the semiconductor substrate（101）and an electrode layer （204）formed on the gate dielectric layer（203）. The source region and the drain region （406）are asymmetric, one of the source and drain regions is provided with a PN junction, the other source and drain region is provided with a mixed junction including a Schottky junction and a PN junction.

Light aluminum alloy suspension power cable

... 本实用新型公开了种轻质铝合金悬浮电力电缆，包括多根稀土铝合金导体，多根稀土铝合金导体外均包覆有桑皮纸绕包防水层、添加丙凝防水乳胶的聚烯烃绝缘层构成绝缘线芯，多根绝缘线芯环形间隔设置在微孔聚四氟乙烯内衬层构成缆芯，多根绝缘线芯中心的微孔聚四氟乙烯内衬层中设有纤维丝编织构成管型的抗拉耐扭曲层，抗拉耐扭曲层中心的微孔聚四氟乙烯内衬层设有通孔，微孔聚四氟乙烯内衬层外设有物理发泡聚烯烃层、外设有沥青防腐蚀层、聚砜保护层。本实用新型通过多重防水结构来提高阻水性能，同时具有较强的机械性能、防水防潮性能、耐高低温性能、防腐性能，成缆相比以前更加节约原材料，重量轻。 ...

Full-automatic feeding device

The invention provides a full-automatic feeding device which is characterized in that a material clamping assembly is installed at one end of a feeding pipeline assembly, a material picking assembly is arranged below the clamping assembly, a material pushing assembly is arranged between the clamping assembly and the material picking assembly, and the material pushing assembly and the material picking assembly are fixedly connected to a sample conveying mechanism. According to the full-automatic feeding device, a worker or an external mechanical arm only needs to place spherical fuel into the feeding pipeline assembly, the material clamping assembly in the feeding pipeline assembly is used for opening and closing a feeding channel of a material picking mechanism of the feeding pipeline assembly, and then the spherical fuel is pushed into a sample conveying mechanism in sequence through the material pushing assembly; the high-efficiency automatic feeding function of an existing CT scanning ...

THIN FILM TRANSISTOR MEMORY AND PREPARATION METHOD THEREFOR

Provided are a thin film transistor memory and a preparation method therefor. The memory uses a gate electrode (200) as a substrate and comprises from top to bottom: a charge-blocking layer (201), a charge-trapping layer, a charge-tunneling layer, an active area of a device, and a source electrode and a drain electrode (211). The charge-blocking layer (201) is an Al2O3 thin film grown using an atomic layer deposition method. The charge-trapping layer is of a dual-layered metal nanocrystalline structure, comprising, grown from an atomic layer from bottom to top, a first metallic nanorcystalline layer (202), an insulating medium layer (203), and a second metallic nanocrystalline layer (204). The charge-tunneling layer is of a symmetrically laminated, layered structure, comprising, grown from an atomic layer from bottom to top, SiO2/HfO2/SiO2 or Al2O3/HfO2/Al2O3 thin films of a laminated, layered structure (205-207). The active area of the device is an indium gallium zinc oxide (IGZO) thin ...

Automatic wharf storage yard and operation interaction method thereof

The invention discloses an automatic wharf storage yard and an operation interaction method thereof, two rows of stockpiling areas are set as a group, single-cantilever rail-mounted cranes are oppositely arranged in the two rows of stockpiling areas of each group of stockpiling areas, and automatic horizontal transportation equipment operation lanes are arranged below the single-cantilever rail-mounted cranes; automatic horizontal transportation equipment is introduced between storage yards to interact with storage yard equipment, the operation speed and the operation distance of the storage yard equipment can be reduced, and therefore the efficiency of the storage yard equipment can be improved, and the service life of related parts can be prolonged; the elevated joist barrow is arranged in the landside interaction area of the storage yard, the automatic horizontal transportation equipment can run to the position below the elevated joist barrow, interaction between the container lorry ...

SEPARATION METHOD OF CARBON NANOTUBES HAVING DIFFERENT CONDUCTIVE PERFORMANCE

Provided is a separation method of carbon nanotubes having different conductive performance, which comprises: a) soaking an integrated circuit material containing metallic carbon nanotubes and semiconductive carbon nanotubes in a liquid; b) pouring the liquid into a container; c) around the container providing an electric field and a pair of magnetic poles forming magnetic induction lines perpendicular to the electric field; d) regulating the directions and sizes of the power lines of the electric field and the same of the magnetic induction lines to separate the metallic carbon nanotubes from the semiconductive carbon nanotubes. The simple and economical method produces high-purity semiconductive and metallic carbon nanotubes, and thus the product yield of the integrated circuit using the semiconductive carbon nanotubes is improved.

PREPARATION METHOD OF HIGH DENSITY ZINC OXIDE NANOMETER GRANULES

This invention relates to a preparation method of high density zinc oxide nanometer granules. In the method, diethyl zinc vapour diluted by inert gas and vapour of hydrogen peroxide aqueous solution are used as precursors, and high density zinc oxide nanometer granules are grown in atom layer deposition equipment in the manner of atom layer deposition. In the method, precursors, i.e., diethyl zinc vapour and vapour of hydrogen peroxide aqueous solution, are introduced into the reaction chamber alternatively in pulse mode, purging with inert gas between the introduction of the two precursors. By this invention, high density zinc oxide nanometer granules are produced by atom layer deposition technology, with the advantages of simple procedure, low cost, and exactly control of the size of nanometer granules. The obtained zinc oxide nanometer granules have average diameter of about 5~25nm, height of 2~10nm, and density of 1.0×1010～1.0×1011cm-2, and can be used as photoelectric conversion material ...

METHOD FOR PRODUCING TRANSISTOR

A method for producing a transistor, comprises the following steps: providing a semiconductor substrate (200); forming a stacked grate (210) on a surface of the semiconductor substrate (200); forming an insulating layer (220) on the surface of the semiconductor substrate (200); forming a consumption layer (230) on a surface of the insulating layer (220); etching the insulating layer (220) and the consumption layer (230); forming a metal layer (250) on the surface of the semiconductor substrate (200); thermal annealing; and removing the metal layer (250). An outer side part of an upper part of a side wall used is made of a material capable of reacting with the metal layer (250), and thus being capable of absorbing the metal layer at two sides of the side wall in the annealing process, so as to avoid the dispersion of the metal layer to the semiconductor layer, and ensure the formation of a Schottky junction that is ultra-thin and uniform in a longitudinal direction and is controllable and ...

Stoving case of target production usefulness

... 本实用新型属于靶材制造领域，具体涉及一种靶材生产用的烘干箱，包括箱体，箱体设置有密封门，密封门与箱体侧边铰接呈转动结构，所述的箱体内还设置有烘干架，箱体内侧壁设置有电热丝，箱体外侧装设有温度表，所述的箱体侧壁设置有缓冲气道，箱体内外侧借助缓冲气道连接相通，缓冲气道套装在降温水箱内，缓冲气道在降温水箱内呈螺旋盘绕设置。本实用新型，采用缓冲气道平衡内外气压，同时借助于降温水箱将热气降温，避免了热气造成工作环境温度升高，造成人员不适或者烫伤工作人员的事故，提高了烘干效果。 ...

GaN substrate-based pGaN enhanced HEMT (High Electron Mobility Transistor) device structure and preparation method thereof

The invention provides a pGaN enhanced HEMT (High Electron Mobility Transistor) device structure based on a GaN substrate and a preparation method of the pGaN enhanced HEMT device structure, and the device structure comprises a substrate structure which comprises a first substrate, a buffer layer and a GaN layer, and the buffer layer and the GaN layer are sequentially formed on the first substrate in the direction away from the first substrate; the Schottky barrier diode comprises a p + doped region and an n + doped region, the p + doped region is formed in the GaN layer, the n + doped region is formed in the p + doped region, and the p + doped region is in contact with the n + doped region to form a PN junction so as to form the Schottky barrier diode; the isolation layer is formed on the GaN layer and covers the p + doped region and the n + doped region; the pGaN enhanced HEMT device is formed on a part of the isolation layer; wherein the p + doped region and the n + doped region are ...

Electric heating towel rack with incense function

An electric heating towel rack with incense comprises a rack body, and the rack body is divided into a plurality of heating areas which are all provided with NTC temperature sensing probes. A junction box is connected to the bottom of the frame body, a control mainboard is arranged in the junction box, an NTC probe used for sensing the environment temperature is arranged in the junction box, and a fan heater is fixedly connected to the bottom of the frame body; an incense box is arranged on the fan heater shell, a cavity is formed in the incense box and used for storing incense, the immersion end of a liquid absorption core is immersed in the incense, and the diffusion end of the liquid absorption core extends into the space, outside the incense box, in the fan heater shell and is located in an airflow channel formed by the fan heater. The corresponding number of heating areas can be selected according to the area of the frame body covered by the fabric, and when the environment temperature ...

GATE STACK STRUCTURE FOR SEMICONDUCTOR FLASH MEMORY DEVICE AND PREPARATION METHOD THEREOF

A gate stack structure for a flash memory device and a preparation method thereof are provided. The gate stack structure comprises a first Al2O3 thin film(2), ruthenium-based nanocrystals(3), a HfxAlyOz thin film(4), a second Al2O3 thin film(5) and a top electrode layer from bottom to top sequentially by taking a silicon slice in P-type (100) crystal orientation as a substrate(1), wherein the first Al2O3 thin film(2) is used as a charge tunneling layer; the ruthenium-based nanocrystals(3) are used as a first type charge trapping layer; the HfxAlyOz thin film(4) is used as a second type charge trapping layer; and the second Al2O3 thin film(5) is used as a charge barrier layer. The ruthenium-based nanocrystals(3) have a high thermal stability and are difficult to diffuse at a high temperature; the HfxAlyOz thin film(4) has a high charge trapping density; and the top electrode is made of metal palladium(6) and has large work function. Thus the gate stack structure has broad application prospect ...

High-voltage vacuum circuit breaker with anti-tripping function

The high-voltage vacuum circuit breaker with the anti-tripping function comprises a shell, a fixed cylinder is fixedly connected to the interior of the shell, a movable cylinder is slidably connected to the interior of the fixed cylinder, the fixed cylinder and the movable cylinder form a vacuum chamber, and a first connecting rod is fixedly connected to the top of the inner wall of the fixed cylinder; the top of the fixing cylinder is provided with a first fixing seat electrically connected with the first connecting rod, one end of the first connecting rod is fixedly connected with a static contact, one end of the second connecting rod is fixedly connected with a moving contact, the inner wall of the fixing cylinder is provided with a fixing ring, the bottom of the fixing ring is fixedly connected with a rubber pad, and the bottom of one side of the shell is provided with a mounting frame. The interior of the installation frame is rotatably connected with an operating rod through a rotating ...

RESISTIVE RANDOM ACCESS MEMORY USING ELECTRIC FIELD ENHANCEMENT LAYER AND METHOD FOR MANUFACTURING SAME

Provided is a resistive random access memory using an electric field enhancement layer, comprising: a top electrode (201), a bottom electrode (203), and a stacked layer located between the top electrode (201) and the bottom electrode (203) and consisted of a first resistance transition layer (202b) and a second resistance transition layer (202a) concurrently serving as an electric field enhancement layer; and the second resistance transition layer (202a) concurrently serving as the electric field enhancement layer is adjacent to the first resistance transition layer (202b), and has a dielectric constant lower than that of the first resistance transition layer (202b). Also disclosed is a method for manufacturing the resistive random access memory using an electric field enhancement layer. The present invention selects the resistive random function materials with different dielectric constants to form the stacked layer structure to adjust the electric field distribution in the resistive random ...

SEMI-FLOATING-GATE POWER DEVICE AND MANUFACTURING METHOD THEREFOR

A semi-floating-gate power device, comprising a gallium nitride high-electron-mobility transistor (100), a diode (200) and a capacitor (300). An anode of the diode is connected to a gate (103) of the gallium nitride high-electron-mobility transistor, and a cathode of the diode is connected to a source (101) or a channel region of the gallium nitride high-electron-mobility transistor. One end of the capacitor is connected to the gate of the gallium nitride high-electron-mobility transistor, and one end of the capacitor is connected to an external voltage signal. The semi-floating-gate power device is simple in structure, easy to manufacture, and suitable for high-voltage and high-speed operation and has high reliability. By means of the semi-floating-gate power device, the threshold voltage of the semi-floating-gate power device in the work state can be increased, and the semi-floating-gate power device can be better used as a power switching transistor.

IGBT overcurrent protection circuit

The embodiment of the invention discloses an IGBT (Insulated Gate Bipolar Translator) overcurrent protection circuit. The IGBT overcurrent protection circuit comprises an IGBT power loop, a saturation voltage drop detection circuit, a gate voltage drop circuit, a PWM control circuit and an IGBT drive circuit. The IGBT power loop is used for converting the direct-current voltage and outputting the direct-current voltage; the saturation voltage drop detection circuit is used for generating a control signal when the saturation voltage drop of the IGBT in the IGBT power loop is greater than a preset value; the gate voltage reducing circuit is used for reducing the gate voltage of the IGBT in the IGBT power loop according to the control signal; the PWM control circuit is used for turning off a PWM signal for driving an IGBT in the IGBT power loop according to the control signal; and the IGBT driving circuit is used for controlling on or off of the IGBT in the IGBT power loop. According to the ...

Preparation method of (2S, 4S)-4-fluoropyrrolidine-2-carboxylic acid

The invention belongs to the technical field of medical intermediates, and particularly relates to a preparation method of (2S, 4S)-4-fluoropyrrolidine-2-carboxylic acid, and the (2S, 4S)-4-fluoropyrrolidine-2-carboxylic acid is prepared by taking (2S, 4R)-N-Boc-4-hydroxy-proline as an initial raw material, and carrying out four reaction steps of methyl esterification reaction, DeoxoFluor fluorination reaction, TFA Boc protecting group removal and LiOH methyl ester removal reaction to obtain a finished product. The preparation method of the (2S, 4S)-4-fluoropyrrolidine-2-carboxylic acid provided by the invention is a brand-new preparation method, and has the advantages of safety, environmental protection and easiness in large-scale production.

GaN HEMT (High Electron Mobility Transistor) device with substrate electric leakage suppression structure and manufacturing method

The invention provides a GaN HEMT device with a substrate electric leakage suppression structure. The GaN HEMT device comprises a substrate and a buffer layer formed on the substrate, a first P + type doped region and a first N + type doped region; wherein the first P + type doped region is formed in the buffer layer; the first N + type doped region is formed on the surface layer of a part of the first P + type doped region, and the first P + type doped region wraps the first N + type doped region; a GaN HEMT structure; a top formed on the buffer layer; wherein the GaN HEMT structure comprises a gate metal layer and a drain metal layer; the gate metal layer and the drain metal layer are arranged along the horizontal direction; wherein the first N + type doped region covers a lower region of the drain electrode metal layer and extends to the first doped region; the first doped region characterizes a lower region between the gate metal layer and the drain metal layer. According to the scheme ...

RADIO-FREQUENCY POWER DEVICE FOR REALIZING SOURCE-DRAIN GATE ASYMMETRICAL SELF-ALIGNMENT AND MANUFACTURING METHOD

The present invention relates to the technical field of radio-frequency power devices, in particular to a radio-frequency power device for realizing source-drain gate asymmetrical self-alignment and manufacturing method thereof. The radio-frequency power device for realizing source-drain gate asymmetrical self-alignment utilizes a gate electrode side wall to realize self-alignment of the positions of a gate electrode, a drain electrode and a source electrode, thus reducing product parameter drifts. In addition, the gate electrode is protected by a passivation layer, such that the source electrode and drain electrode of the device can be formed via an alloying process, an epitaxy process or an ion implantation process after the formation of the gate electrode. With a simple technical process, the present invention reduces source-drain parasitic resistance and increases electrical properties of a radio-frequency power device.

PREPARATION METHOD OF NANO MOS DEVICE AND NANO MOS DEVICE

Disclosed is a preparation method of a Nano MOS device, prepared gates being metal gates, therefore the poly depletion effect is avoided, thereby improving the performance of the MOS device. In the method, a metal film is respectively deposited on surfaces of side walls at two sides of a polycrystalline semiconductor layer, metal in the metal films diffuse to the surfaces of the sides walls of the polycrystalline semiconductor layer, and metal semiconductor compound Nano wires are formed on the surfaces of the side walls of the polycrystalline semiconductor layer after annealing, saving the need of utilizing the high-resolution lithography technology to form the metal semiconductor compound Nano wires, thereby reducing the costs. Further disclosed is a Nano MOS device having gates being metal gates, therefore, the poly depletion effect can be avoided and the performance of the MOS device can be improved.

SILICON WAFER ALIGNMENT METHOD APPLIED TO THROUGH SILICON VIA INTERCONNECTION

A silicon wafer alignment method is applied to through silicon via (TSV) interconnection. The method relates to high integration packaging technology field. When a plurality of silicon wafers are stacked and interconnected, the stacked upper and lower silicon wafers (2,3) are aligned by electrical method. Therefore, the precision of alignment of the silicon wafers can be enhanced, and the interconnection resistance can be reduced. The integrated circuit chip made by the method has performances of high speed and low power consumption.

METHOD FOR MANUFACTURING METAL-SEMICONDUCTOR COMPOUND THIN-FILM

Provided is a method for manufacturing a metal-semiconductor compound thin-film. In the method, when depositing a metal layer (103) via a physical vapor deposition (PVD) process, a portion of a target material is ionized into an ionized state, and metal ions are produced therefrom. A substrate bias is applied to a semiconductor substrate (101), allowing the metal ions to move in an accelerated speed towards the semiconductor substrate (101) and to enter the semiconductor substrate (101), thereby increasing the thickness of the metal-semiconductor compound thin-film (105) ultimately formed. By controlling the magnitude of the substrate bias on the semiconductor substrate (101), the quantity of metal ions entering the semiconductor substrate (101) can be regulated, thereby regulating the thickness of the metal-semiconductor compound thin-film (105) ultimately formed.

Homojunction sensing, storing and computing integrated device and preparation method thereof

The invention discloses a homojunction sensing, storing and computing integrated device and a preparation method thereof. The homojunction sensing, storing and computing integrated device comprises a flexible substrate; the bottom electrode is an organic conductive polymer and is formed on the flexible substrate; the first functional layer is an annealed three-element n-type oxide semiconductor thin film, has a photoelectric response crystal phase and is formed on the bottom electrode; the second functional layer is a three-element n-type oxide semiconductor thin film which is not annealed, and the second functional layer and the first functional layer are made of the same material and jointly form a homojunction; the grooves are distributed at intervals, penetrate through the second functional layer and the first functional layer to reach a bottom electrode, and are filled with isolation layers; the top electrode is formed on the second functional layer, the first functional layer generates ...

Preparation method of ultra-low dielectric constant film

The invention provides a preparation method of an ultra-low dielectric constant film, which comprises the following steps: Sa, introducing siloxane-based molecular gas and hydrocarbon organic macromolecular hydrocarbon gas into a reaction cavity with a substrate at intervals, and forming a base material on the substrate; and Sc, introducing siloxane-based molecular gas and oxygen or nitrogen-containing gas at intervals, and forming a SiOC (H) or SiOCN film by taking the base material as a substrate, and finally, repeating the steps and carrying out post-annealing treatment to form the ultra-low dielectric constant film containing the sub-nano pores. According to the preparation method of the ultra-low dielectric constant film disclosed by the invention, the obtained ultra-low dielectric constant film has an extremely low dielectric constant and good mechanical properties.

Preparation method of (R)-2, 2, 2-trifluoro-1-phenylethylamine hydrochloride

The invention belongs to the technical field of medical intermediates, and particularly relates to a preparation method of (R)-2, 2, 2-trifluoro-1-phenylethylamine hydrochloride, and the preparation method of the (R)-2, 2, 2-trifluoro-1-phenylethylamine hydrochloride comprises the following steps: taking trifluoroacetyl benzene as an initial raw material, and carrying out amination reaction, asymmetric reduction reaction and HCl salification reaction to obtain a finished product. The preparation method of the (R)-2, 2, 2-trifluoro-1-phenylethylamine hydrochloride provided by the invention is a brand new preparation method, and has the advantages of safety, environmental protection and easiness in large-scale production.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device and a manufacturing method thereof. Metal semiconductor compound contact regions (310) are formed on a source (302) and a drain (303) of a transistor, and metal semiconductor compounds (312) are formed in through holes (305) which are provided in an insulating dielectric layer (304) and at positions corresponding to the source and the drain, so as to lead out the source and the drain. Because filling materials in the through holes and materials of the source and drain contact regions are all metal semiconductor compounds, the contact resistance between the filling materials in the through holes and the source and drain contact regions is low, the resistance of the substances in the through holes is low, and a desired interface and good adhesivity are achieved between the conductive materials in the through holes and the insulating dielectric layer. Therefore, the structures of the materials of the dielectric layer may not be damaged, and a barrier layer does not need ...

MULTILEVEL CELL THIN FILM TRANSISTOR MEMORY AND PREPARATION METHOD THEREFOR

A multilevel cell thin film transistor memory and a preparation method therefor. In terms of structure, the memory is sequentially provided with, from bottom to top, a gate electrode (10), a charge blocking layer (20), a charge trapping layer (30), a charge tunneling layer (40), an active area (50), and a source/drain electrode (60); the charge tunneling layer (40) fully surrounds the charge trapping layer (30) so as to fully isolate the charge trapping layer (30) from the outside; the material of the charge trapping layer (30) comprises any one of ZnO, In2O3, Ga2O3, SnO2, InSnO or IGZO. The charge trapping layer (30) of the thin film transistor memory is fully surrounded by the charge tunneling layer (40), and thus is fully isolated from the outside, such that the physical properties and chemical composition of the charge trapping layer (30) is prevented from changing in a technological process, loss of charges stored in the charge trapping layer (30) is reduced, and the data retention ...

Driving module of GaN transistor, switching circuit and electronic equipment

The utility model provides a driving module of a GaN transistor, a switching circuit and an electronic device, comprising a first pull-down transistor and a reverse overshoot suppression unit, a first end of the first pull-down transistor is directly or indirectly connected to a grid electrode of the GaN transistor, and a second end of the first pull-down transistor is directly or indirectly connected to a grid electrode of the GaN transistor; the reverse overshoot suppression unit is connected between the second end of the first pull-down transistor and the ground, and the reverse overshoot suppression unit is also directly or indirectly connected to the grid electrode of the GaN transistor; the GaN transistor is connected between a first voltage source and the ground; the reverse overshoot suppression unit is used for controlling the release of charges of the grid electrode of the GaN transistor with first impedance when the voltage of the grid electrode of the GaN transistor drops and ...

Truss type transfer automatic wharf storage yard and interaction method thereof

According to the truss type transfer automatic wharf storage yard and the interaction method thereof, horizontal transportation equipment operation lanes are arranged between the storage areas, so that horizontal transportation equipment can enter and exit from the storage yard, a rail-mounted gantry crane cart walking mechanism can be decelerated, the service life of related parts of a rail-mounted gantry crane is prolonged, and the working efficiency is improved. The running distance of the rail crane trolley is reduced, so that the storage yard operation efficiency is improved; the trailer lane is arranged in the landside interaction area in the direction parallel to the quay wall of the wharf and is combined with the arrangement of the container transfer equipment, so that a turning and backing-up area of a traditional automatic wharf storage yard trailer is replaced, the operation mode that the trailer enters the landside interaction area lane in a backing-up mode is omitted, the time ...

SEMICONDUCTOR MEMORY STRUCTURE AND CONTROL METHOD THEREOF

Provided are a semiconductor memory structure and a control method thereof, relating to the technical field of semiconductor non-volatile memories. The semiconductor memory structure includes a storage unit for storing information and a tunnelling field effect transistor connected to the storage unit. The tunnelling field effect transistor is used for controlling the semiconductor memory, for example, erase and write operation and read operation. A plurality of semiconductor memory structures constitute a semiconductor memory array. The semiconductor memory control method includes steps of resetting, setting and reading. The vertical grid-control diode structure in the tunnelling field effect transistor can not only satisfy the large current requirements for writing into the resistance change memory and phase change memory, but can also improve the density of the memory device array, so is suitable for manufacturing a semiconductor memory chip, and the control method and control circuit ...

METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR

A method of manufacturing a field effect transistor is provided. The method comprises the following steps of: supplying a first type body substrate (11), forming a shallow trench by a photolithography and etching method, and growing to form a silicon dioxide shallow trench isolation structure (21) in the shallow trench; depositing on the substrate (11) and the shallow trench isolation structure (21) to form a high-K gate dielectric layer (31) and a metal gate electrode layer (41); forming a gate electrode structure by a photolithography or corrosion process and the like; implanting second type body impurity ions to form source and drain extension areas (111); depositing an insulating layer to form a side wall (51) attached to the edge of a gate electrode; implanting the second type body impurity ions to form source and drain areas of a second type body field effect transistor and a PN junction interface (111a) positioned between the source and drain areas and a silicon substrate; and carrying ...

METHOD FOR PREPARING METAL NITRIDE FILM WITH ADJUSTABLE METAL CONTENT AND REACTOR

Disclosed are a method for preparing a metal nitride film with an adjustable metal content and a reactor, the method comprising a plurality of first half-reaction processes and a plurality of second half-reaction processes, and the metal nitride film with an adjustable metal content being prepared by controlling the ratio of the cycle times of the first half-reaction process to the cycle times of the second half-reaction process; the first half-reaction process refers to dissociating from the metal organic precursor absorbed on the surface of the substrate by using light irradiation, thus leaving a metal atom layer on the surface of the substrate; and the second half-reaction process refers to a reaction with the metal atom layer on the surface of the substrate using NH3 plasma, so as to form a metal nitride film. The method can adjust and control the ratio between the metal and nitrogen in the film, and can realize the modulation of the film resistivity; and the prepared metal nitride ...

DISPLAY PANEL PROTECTIVE GLASS, MANUFACTURING METHOD THEREFOR, DISPLAY PANEL, AND DISPLAY DEVICE

A display panel protective glass, a manufacturing method therefor, a display panel, and a display device. The display panel protective glass comprises: a glass substrate (1); a white photoresist layer (2) arranged on the glass substrate (1), the white photoresist layer (2) being provided along an edge frame area (B) of the glass substrate (1); a separation layer (3) arranged on the white photoresist layer (2); and a black matrix layer (4) arranged on the separation layer (3), the black matrix layer (4) being provided along the edge frame area (B) of the glass substrate (1).

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device and a manufacturing method thereof. Metal semiconductor compound contact regions (304) are formed on a source (302) and a drain (303) of a transistor, and metal semiconductor compounds (312) are formed in through holes (307) which are provided in an insulating dielectric layer (306) and at positions corresponding to the source and the drain, so as to lead out the source and the drain. Because filling materials in the through holes and materials of the source and drain contact regions are all metal semiconductor compounds, the contact resistance between the filling materials in the through holes and the source and drain contact regions is low, the resistance of the substances in the through holes is low, and a desired interface and good adhesivity are achieved between the conductive materials in the through holes and the insulating dielectric layer. Therefore, the structures of the materials of the dielectric layer may not be damaged, and a barrier layer does not need ...

NIO-BASED RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING SAME

Disclosed are an NiO-based resistive random access memory and a method for manufacturing same. The memory unit comprises a substrate (100) and a Metal-Insulator-Metal (MIM) structure, wherein a top electrode (401) is a metal thin film made of copper or aluminum and capable of being used in an interconnection process, and a variable-resistance insulator is a dielectric thin film of a laminated structure made of three media, namely, Al2O3/NiO/Al2O3. The MIM structure, under direct current voltage continuous scanning, has stable double-resistance state transition and memory characteristics, and compared with the resistive random access memory unit using a dielectric thin film of a single dielectric layer structure made of only one medium, namely, NiO, the memory window of the MIM structure is enlarged, and the stability of the resistance value is enhanced. Also provided is a method for manufacturing the memory unit.

METHOD FOR MANUFACTURING METAL SILICIDE THIN FILM AND ULTRA SHALLOW JUNCTION, AND SEMICONDUCTOR DEVICE

Provided are a method for manufacturing a metal silicide thin film and an ultra shallow junction, and a semiconductor device. A mixture thin film is deposited on a semiconductor substrate through a physical vapor deposition (PVD) method by using a mixture of a metal and a semiconductor doped with impurities as a target material, the mixture thin film is removed by a wet process, and annealing is performed to form a metal silicide thin film and an ultra shallow junction. Because the mixture thin film is deposited by using the mixture of a metal and a semiconductor doped with impurities as the target material, and the mixture thin film is removed by the wet process before heating and annealing, so that a self-limiting ultra-thin uniform metal silicide thin film and an ultra shallow junction can be synchronously formed in a process of manufacturing a semiconductor field effect transistor. The present invention can be applied in field effect transistors with technology nodes of 14 nanometers ...

TOUCH SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE

A touch substrate, a manufacturing method therefor, and a display device, the touch substrate comprising: a substrate (10) and a touch wiring that is provided on the substrate (10); the touch wiring comprises a hollow pattern (210) that is formed by a plurality of metal wires.

Bottom U-shaped gate surrounding gate transistor device and manufacturing method thereof, equipment and manufacturing method of bottom U-shaped gate surrounding gate transistor device

The invention provides a bottom U-shaped gate surrounding gate transistor device, which comprises a substrate, a first source region, a first drain region, a first control gate and a first channel layer, wherein first ions are doped in the first source region and the first drain region; the first channel layer represents the channel layer closest to the substrate; the first control gate represents the control gate closest to the substrate; the first source region is formed between the substrate and the first drain region, the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region, and the type of the first ions is different from that of the second ions; wherein the thickness of the first control gate channel layer in the second direction is higher than the thickness of other control gates in the second direction; the height of the first surfaces of the second source region and the ...

Insulated gate bipolar transistor with temperature sensing function and preparation method thereof

The invention provides an insulated gate bipolar transistor with a temperature sensing function and a preparation method thereof. The insulated gate bipolar transistor comprises an N-type silicon substrate, a gate structure, an emitter structure and a collector structure, wherein the gate structure and the emitter structure are formed on the front face of the N-type silicon substrate, and the collector structure is formed on the back face of the N-type silicon substrate. Wherein the gate structure is located below the emitter structure, and the gate structure comprises a first false control gate, a control gate and a second false control gate which are sequentially arranged at intervals; a first false control gate and a second false control gate are formed on the N-type silicon substrate, front P-type well regions are formed on two sides of the front of the N-type silicon substrate, the front P-type well regions wrap the first false control gate and the second false control gate respectively ...

Low-consumption management system and method for battery pack while drilling based on real-time performance index monitoring

The invention provides a while-drilling battery pack low consumption management system and method based on real-time performance index monitoring. The system comprises a battery pack module composed of a plurality of single batteries arranged according to a redundancy principle; and the low-power-consumption intelligent management device is connected with working ports of the battery pack module and the instrument while drilling, and is used for monitoring performance indexes of the battery pack module based on different operation modes of the low-power-consumption intelligent management device and automatically controlling the operation state of each single battery in the battery pack based on a set strategy on the basis of an output vector of a port of the instrument while drilling. By adopting the system, different working modes are designed to control the power consumption of the whole operation to be the lowest, the real-time performance index data of the battery can be effectively ...

SiC substrate-based pGaN enhanced HEMT (High Electron Mobility Transistor) device structure and preparation method thereof

The invention provides a pGaN enhanced HEMT (High Electron Mobility Transistor) device structure based on a SiC substrate and a preparation method of the pGaN enhanced HEMT device structure, and the device structure comprises the components of a substrate which comprises a p + doped region and an n + doped region which are respectively formed in a first region and a second region of the substrate; wherein the first area and the second area are two opposite side areas along the surface of the substrate; the p + doped region is in contact with the n + doped region to form a PN junction so as to form the Schottky barrier diode; the isolation layer is formed on the substrate and covers the p + doped region and the n + doped region; the pGaN enhanced HEMT device is formed on a part of the isolation layer; wherein the p + doped region and the n + doped region are electrically connected with an anode and a cathode respectively, and the anode is electrically connected with a source electrode of ...

Method for improving playing efficiency and player

The invention discloses a playing method for improving playing efficiency and a player, and the method comprises the following steps: requesting an M3U8 file of a multi-code-rate stream from a media server, wherein the construction of the M3U8 file comprises a label which indicates that the index file is a new definition of a special M3U8 first-level index file, and multi-code-rate information and slice description information which are combined and described; analyzing and recording multi-code-rate information and slice description information in the M3U8 file; obtaining a corresponding code rate value according to the definition selected by the user, adding a code rate value parameter behind the slice address, and sequentially requesting corresponding TS slice data from a media server; and TS slice data sent back by the media server is received, processed and played. According to the method, for the media stream of the multi-code-rate HLS, the multi-code-rate description information is ...

MAIN DRIVE CONTROL METHOD FOR GLASS FACTORIES

A main drive control method for glass factories, comprising the following steps: (a) providing a first circuit breaker and a second circuit breaker on a power supply loop of an electrical motor, wherein one end thereof is respectively connected to two main drive electrical motors; (b) enabling the first circuit breaker to be connected to a municipal power supply and the second circuit breaker to be connected to a UPS power supply; and (c) enabling the first circuit breaker and the second circuit breaker to be interlocked via a mechanical interlocking mechanism, so that only one of the circuit breakers can be switched on during a normal operation. The main drive control method for glass factories solves the problem that the rotation speed of a main drive electrical motor is incorrect due to the interference on a signal. The requirement of no stop of both electrical motors when either a municipal power supply or a UPS power supply has a failure is met; and meanwhile, the two main drive control ...

Upper limb massager used after breast cancer operation

The invention discloses a breast cancer postoperative upper limb massager, and particularly relates to the technical field of medical instruments, the breast cancer postoperative upper limb massager comprises a fixing support, a moving assembly is fixedly mounted on the inner side of the fixing support, a massage assembly is mounted at the bottom of the moving assembly, and a lubricating assembly is arranged on one side of the moving assembly; a length adjusting assembly is fixedly installed on one side of the fixing support, a height adjusting assembly is arranged in the length adjusting assembly, and a large arm limiting ring is installed on one side of the height adjusting assembly. The massage assembly is driven by the moving assembly to push and massage the outside of the arm of a patient, blood of the forearm is conveniently pushed to the upper arm, then the blood flows to the heart, the blood circulation effect of the upper limb is improved, the purpose of relieving edema of the ...

Water heater based on porous medium burner

The water heater comprises a water heater shell, the water heater shell comprises a furnace pipe, a water jacket used for storing water is arranged on the outer side of the furnace pipe, the porous medium combustor is fixedly arranged in the furnace pipe, an inner cavity of the porous medium combustor comprises a combustion reaction area, and anti-backfire areas are arranged at the two ends of the combustion reaction area. Mixed gas inlets are formed in the two ends of the porous medium combustor and connected with a mixed gas input pipeline, and one end of the mixed gas input pipeline extends out of the water heater shell and is connected with a gas fuel supply device. An ignition device is arranged in the porous medium combustor, mixed gas flows into the combustion reaction area from the mixed gas input pipeline and is ignited by the ignition device, and heat generated by combustion of the mixed gas heats water in the water jacket; flue gas is discharged from the combustion reaction area ...

Intelligent brain-computer fusion motion function closed-loop rehabilitation device

The invention relates to an intelligent brain-computer fusion motion function closed-loop rehabilitation device which comprises an electroencephalogram signal acquisition device, an electroencephalogram data analysis system and a body illusion inducing device. The electroencephalogram signal acquisition equipment comprises a signal amplifier, an electroencephalogram acquisition cap worn by a subject and a host, and the host comprises integrated acquisition software and synchronous stimulation software; the electroencephalogram data analysis system comprises a data preprocessing device, a feature extraction and selection device and a classifier; the ontology illusion inducing device comprises a variable-frequency vibration motor, a master controller and a motor driving module for providing rated voltage and current for the motor to work. Based on the action mechanism of motor imagery and external motion feedback on neural remodeling, the ontology illusion inducing device is based on the ...

SEMICONDUCTOR MEMORY DEVICE WITH BURIED DRAIN AND MEMORY ARRAY

A semiconductor memory device with a buried drain is provided. The device comprises a semiconductor substrate (107); one drain region (108) of a first doping type; two source regions (101a,101b) of a second doping type; and a stacked gate provided on the semiconductor substrate for capturing electrons. A memory array formed by a plurality of semiconductor memory devices and a manufacturing method thereof are also provided. The semiconductor memory device has the advantages of small cell area, simple manufacturing process and the like. The manufacturing cost of the memory device is reduced and the storing density of the memory device is increased.

BRIGHTNESS-ADJUSTABLE LIGHT EMITTING DEVICE, ARRAY AND MANUFACTURING METHOD THEREOF

The present invention belongs to the technical field of semiconductor devices, and particularly disclosed are a brightness-adjustable light emitting device, an array and a manufacturing method thereof. The light emitting device comprises a semiconductor substrate, and a MOSFET and a light emitting diode located on the semiconductor substrate. The light emitting diode (LED) and the control element (MOSFET) thereof are integrated on the same chip, enabling a single chip to emit an image. An array of light emitting devices can also be formed by a plurality of the light emitting devices. At the same time, a manufacturing method for the light emitting device is also disclosed. A projecting device manufactured from the light emitting device provided in the present invention has the advantages of small volume, portability and low power consumption, etc. In addition, the use of the integrated circuit chip enables a significant simplification of the projecting device system, reducing production ...

HIGH-ELECTRON-MOBILITY TRANSISTOR EMPLOYING GATE FIRST PROCESS AND MANUFACTURING METHOD FOR THE TRANSISTOR

The present invention relates to the technical field of radiofrequency transistors, and specifically relates to a high-electron-mobility transistor employing a gate first process and to a manufacturing method for the transistor. The present invention employs the gate first process for manufacturing the high-electron-mobility transistor, utilizes a gate electrode insulation medium sidewall to implement self-alignment of the positions of a gate electrode and of a source electrode, while at the same time, because the gate electrode is protected by a passivation layer, allows for the formation of a source electrode and a drain electrode of the high-electron-mobility transistor by means of either an alloying process, an ion injection process or an epitaxial process, has a simple process, reduces drifting of a product parameter, and increases the electrical properties of the high-electron-mobility transistor.

TRANSISTOR AND MANUFACTURING METHOD THEREOF

Provided are a transistor (100) and a manufacturing method thereof. The transistor (100) has an inverted heterojunction structure. An emitter (120) layer is formed before a base (130) layer and a collector (140) layer are formed. An ALE process is used for forming the emitter (120) layer on an epitaxial monocrystalline metal silicide (110) which is formed in advance, the base (130) layer is formed on the emitter (120) layer, and the collector (140) layer is formed on the base (130) layer, so that the inverted heterojunction structure can be obtained. By providing better thermal budgets for critical base region morphology and doping distribution control, a higher cut-off frequency (fT) can be obtained; and by minimizing a contact area of a collector region and a base region, the parasitic capacitance can be greatly reduced, and the highest oscillation frequency (fmax) can be increased. Therefore, frequency characteristics of the transistor can be greatly improved.

Railway carriage or compartment style laser low latitude security protection system

... 本实用新型公开了一种厢体式激光低空安保防护系统，涉及激光安保领域。一种厢体式激光低空安保防护系统，它包括可独立搬运和平行安放的两个厢体，两个厢体分别是主机厢和热控厢。所述主机厢内部集成设置有控制单元、操控台、激光光源模块、光学平台和跟踪转台。所述跟踪转台安装在光学平台上；所述光学平台与激光光源模块通过光纤连接。所述控制单元与操控台、激光光源模块、跟踪转台分别进行电气连接。所述热控厢内部设置有热控单元，所述热控单元与控制单元可拆卸的电气连接，所述热控单元与激光光源模块通过冷却管道可拆卸连接。本系统采用厢式激光系统，具备体积重量小、布设灵活方便、适应多种场地等特点。 ...

Adjustable surveying and mapping damping type supporting device for surveying and mapping engineering

The invention discloses an adjustable surveying and mapping damping type supporting device for surveying and mapping engineering, and belongs to the technical field of surveying and mapping engineering. Comprising a hemispherical shell and further comprises a first supporting plate fixedly connected to the surface of the hemispherical shell, a first sliding groove is formed in the surface of the first supporting plate, an adjusting plate is slidably connected into the first sliding groove, and a supporting seat is fixedly connected to the surface of the adjusting plate; the supporting legs are fixedly connected to the outer wall of the hemispherical shell; the first rotating column is rotationally connected to the surface of the adjusting plate, a pawl is fixedly connected to the outer wall of the first rotating column, and a torsional spring is fixedly connected between the first rotating column and the adjusting plate; the first rotating disc is rotationally connected to the surface of ...

Bionic photoelectric reservoir neuromorphic device and preparation method thereof

The invention discloses a bionic photoelectric reservoir neuromorphic device and a preparation method thereof. The photoelectric reservoir neuromorphic device comprises: a substrate; the seed layer is formed on the substrate; the isolation layer is formed on the seed layer; the oxide nanowire network is formed on the surface of the isolating layer and serves as an electronic reserve pool, neuron nodes in the reserve pool are constructed by utilizing the characteristic that grown oxide nanowires are randomly arranged, and reserve pool neurons which are similar to a human brain and are randomly connected are realized by virtue of the memristive behavior of the oxide nanowires; the semiconductor quantum dots with photoelectric response grow on the oxide nanowire network and modify the oxide nanowire network, the response of the device is expanded from pure electricity to photoelectric response, and the sensing function of optical signals is achieved; and the working electrode grows on the ...

ROCKING PLATFORM FOR BIOREACTOR

Provided is a rocking platform for a bioreactor, and the rocking platform comprises: a fixed platform (2), and a first movable platform (1) disposed on one side of the fixed platform (2). The first movable platform (1) can rock up and down at a positive angle or at a negative angle with respect to the plane of the fixed platform (2). In an alternative embodiment, the fixed platform (2) is omitted, such that the first movable platform (1) and a second movable platform (1') are disposed adjacent to each other.

Preparation method of enhanced gallium nitride power device

The invention provides a preparation method of an enhanced gallium nitride power device. The preparation method comprises the following steps: providing a substrate; forming a buffer layer, a channel layer, a barrier layer, a source metal layer and a drain metal layer; the buffer layer, the channel layer and the barrier layer are sequentially formed on the substrate in the direction away from the substrate; the source metal and the drain metal are arranged on the surface of the barrier layer along a first direction; the first direction is perpendicular to the stacking direction of the buffer layer, the channel layer and the barrier layer; forming a first dielectric layer; the first dielectric layer is formed on the surface of a part of the barrier layer; injecting fixed positive charges into the first dielectric layer on the surface of a part of the barrier layer, and activating the fixed positive charges; forming a gate metal layer; a gate metal layer is formed over the barrier layer in ...

Marine oil spill fence structure

The invention discloses a marine oil spill fence structure, and belongs to the technical field of water surface fences, the marine oil spill fence structure comprises a shell component, a driving mechanism, a floating body assembly and a lower fence mechanism, the shell component comprises a main shell and a plurality of liquid guide cavities, the liquid guide cavities are distributed in the main shell, liquid inlet pipes and liquid discharge pipes are communicated in the liquid guide cavities, the liquid guide assembly comprises a piston piece and a bent lever arm, and the piston piece is connected with the driving mechanism. The piston piece is assembled in the liquid guide cavity in a sliding mode, the driving mechanism comprises a driving rod, the driving rod is connected with an impeller and a C-shaped shaft rod, the C-shaped shaft rod is assembled and connected with the bent lever arm, the floating body assembly is provided with a plurality of suction nozzles, and the fence falling ...

Power plant personnel management and control system

A power plant personnel management and control system provided by the present invention comprises a personnel positioning system, a three-dimensional service platform and a two-ticket system, the personnel positioning system comprises a UWB positioning engine, a three-dimensional server and a UWB positioning terminal, and the three-dimensional service platform comprises a virtual electronic fence. The virtual electronic fences comprise large fences arranged in each management and control area of the power plant and small fences corresponding to each KKS coding object of the power plant, and each virtual electronic fence judges whether alarm needs to be triggered or not. Therefore, two types of virtual electronic fences associated with KKS codes are set, the personnel positioning system and the two-ticket system are associated through the three-dimensional service platform to realize personnel management and control, the two types of virtual electronic fences can be combined to realize an ...

WINDPROOF BRIDGE CRANE ANCHORING SYSTEM AND METHOD

Disclosed are a windproof bridge crane anchoring system and an anchoring method therefor. The system comprises a bridge crane (1), four windproof pull rods (2) arranged on the bridge crane (1), and four windproof ground foundations (3) respectively corresponding to the four windproof pull rods (2), wherein the windproof pull rod (2) comprises a pull rod body (21), a pull rod nut (22), a driving device (A) and a lock pin (23); a top end of the pull rod body (21) is fixed to a driven device (B), and a bottom end thereof is connected to the lock pin (23); and the windproof ground foundation (3) is provided with a lock pin fixing groove (31), with a notch thereof being mounted with a fixing plate (32) provided with a first notch (33) and a second notch (34) adjacent to each other. A windproof anchoring control module drives the driving devices (A) to operate, so that the pull rod bodies (21) descend to extend, via the second notches (34), into the lock pin fixing grooves (31); and after the ...

DATA TRANSMISSION SYSTEM AND METHOD FOR TRANSMITTING DOWNHOLE MEASUREMENT-WHILE-DRILLING DATA TO GROUND

Disclosed are a data transmission system and method for transmitting downhole measurement-while-drilling data to ground. The system comprises: a drill string (40) on which a logging-while-drilling tool is mounted; and a thrown-while-drilling sub (71), which accommodates a micro-memory (43). The thrown-while-drilling sub (71) comprises: a housing sleeved over the drill string (40), a gap space being formed between an outer side of the drill string (40) and the housing; a control circuit (901); and a wireless transceiver apparatus (63). When receiving an instruction, sent by the control circuit (901), for releasing the micro-memory (43), the thrown-while-drilling sub (71) releases the micro-memory (43) loaded with downhole measurement data to the ground. The data transmission system for transmitting downhole measurement-while-drilling data to ground significantly improves a data transmission rate and communication reliability, and does not require extra cost or affect a normal drilling process ...

POWER DEVICE AND METHOD FOR PERFORMING CONDUCTIVITY MODULATION BY USING PHOTOELECTRON INJECTION

A power device and a method for performing conductivity modulation by using photoelectron injection are provided. The power device comprises at least one photoelectron injection light source (309) and a power Metal Oxide Semiconductor (MOS) transistor (300). By adopting a photoelectron injection method, carriers are injected into a drift region (302) below a gate (308) of the power MOS transistor (300) to perform conductivity modulation, so that the characteristic on-resistance of the power MOS transistor (300) is reduced; and simultaneously the doping concentration of the drift region (302) can be reduced and a blocking-voltage can be improved, so that the performance of the power MOS transistor (300) is greatly improved and the application of the power MOS transistor (300) is expanded to high-voltage fields.

PREPARATION METHOD OF NANO MOS DEVICE AND NANO MOS DEVICE

Disclosed is a preparation method of a Nano MOS device, prepared gates being metal gates, therefore the poly depletion effect is avoided, thereby improving the performance of the MOS device. In the method, a metal film is respectively deposited on surfaces of side walls at two sides of a polycrystalline semiconductor layer, metal in the metal films diffuse to the surfaces of the sides walls of the polycrystalline semiconductor layer, and metal semiconductor compound Nano wires are formed on the surfaces of the side walls of the polycrystalline semiconductor layer after annealing, saving the need of utilizing the high-resolution lithography technology to form the metal semiconductor compound Nano wires, thereby reducing the costs. Further disclosed is a Nano MOS device having gates being metal gates, therefore, the poly depletion effect can be avoided and the performance of the MOS device can be improved.