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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 48235. Отображено 100.
05-01-2012 дата публикации

CIGS Solar Cell and Method for Manufacturing thereof

Номер: US20120000531A1
Автор: Yan-Way LI
Принадлежит: GCSOL Tech CO Ltd

A CIGS solar cell includes a glass substrate, a light absorbing surface and a photoelectric transducer structure. The glass substrate includes a plurality of arrayed protrusions. The arrayed protrusions protrude from at least one surface of the glass substrate, wherein the depth from the top of the arrayed protrusions to the bottom of the arrayed protrusions is predetermined. The light absorbing surface is located on the top of the arrayed protrusions, the side of the arrayed protrusions and the surface of the glass substrate between the arrayed protrusions. The photoelectric transducer structure includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer.

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Номер записи: 1
05-01-2012 дата публикации

Method for fabricating semiconductor thin film using substrate irradiated with focused light, apparatus for fabricating semiconductor thin film using substrate irradiated with focused light, method for selectively growing semiconductor thin film using substrate irradiated with focused light, and semiconductor element using substrate irradiated with focused light

Номер: US20120001302A1
Автор: Hisashi Matsumura, Kazuyoshi Itoh, Shunro Fuke, Yasuo Kanematsu
Принадлежит: Osaka University NUC

An apparatus ( 100 ) for fabricating a semiconductor thin film includes: substrate surface pretreatment means ( 101 ) for pretreating a surface of a substrate; organic layer coating means ( 102 ) for coating, with an organic layer, the substrate thus pretreated; focused light irradiation means ( 103 ) for irradiating, with focused light, the substrate coated with the organic layer, and for forming a growth-mask layer while controlling layer thickness; first thin film growth means ( 104 ) for selectively growing a semiconductor thin film over an area around the growth-mask layer; substrate surface treatment means ( 105 ) for, after exposing the surface of the substrate by removing the growth-mask layer, modifying the exposed surface of the substrate; and second thin film growth means ( 106 ) for further growing the semiconductor thin film and growing a semiconductor thin film over the modified surface of the substrate.

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Номер записи: 2
05-01-2012 дата публикации

Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material

Номер: US20120003819A1
Автор: Alexander Reznicek, Devendra K. Sadana, He Hong, Paul David Brabant, Robert Torres, Jr., Satoshi Hasaka, Terry Arthur Francis, Thomas N. Adam
Принадлежит: International Business Machines Corp, Matheson Tri-Gas Inc

The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

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Номер записи: 3
19-01-2012 дата публикации

Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing

Номер: US20120012812A1
Автор: Cem Basceri, Thomas Gehrke
Принадлежит: Micron Technology Inc

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

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Номер записи: 4
19-01-2012 дата публикации

Semiconductor light emitting device and method for manufacturing same

Номер: US20120012814A1
Автор: Hajime Nago, Koichi Tachibana, Shinya Nunoue, Tomonari SHIODA, Toshiki Hikosaka, Yoshiyuki Harada
Принадлежит: Toshiba Corp

According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.

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Номер записи: 5
26-01-2012 дата публикации

Buffer layer formation

Номер: US20120017983A1
Автор: Markus E. Beck
Принадлежит: Individual

Manufacturing a photovoltaic device can include a vapor transport deposition process.

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Номер записи: 6
26-01-2012 дата публикации

Sodium Sputtering Doping Method for Large Scale CIGS Based Thin Film Photovoltaic Materials

Номер: US20120018828A1
Автор: May Shao
Принадлежит: CM Manufacturing Inc

A method of processing sodium doping for thin-film photovoltaic material includes forming a metallic electrode on a substrate. A sputter deposition using a first target device comprising 4-12 wt % Na 2 SeO 3 and 88-96 wt % copper-gallium species is used to form a first precursor with a first Cu/Ga composition ratio. A second precursor over the first precursor has copper species and gallium species deposited using a second target device with a second Cu/Ga composition ratio substantially equal to the first Cu/Ga composition ratio. A third precursor comprising indium material overlies the second precursor. The precursor layers are subjected to a thermal reaction with at least selenium species to cause formation of an absorber material comprising sodium species and a copper to indium-gallium atomic ratio of about 0.9.

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Номер записи: 7
02-02-2012 дата публикации

Method for fabricating group iii-nitride semiconductor

Номер: US20120028446A1
Автор: Hao-Chung Kuo, Ming-Hua Lo, Yuh-Jen Cheng
Принадлежит: Individual

A method of fabricating a group III-nitride semiconductor includes the following steps of forming a first patterned mask layer with a plurality of first openings deposited on an epitaxial substrate; epitaxially growing a group III-nitride semiconductor layer over the epitaxial substrate and covering at least part of the first patterned mask layer; etching the group III-nitride semiconductor layer to form a plurality of second openings, which are substantially at least partially aligned with the first openings; and epitaxially growing the group III-nitride semiconductor layer again.

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Номер записи: 8
09-02-2012 дата публикации

Graded high germanium compound films for strained semiconductor devices

Номер: US20120032265A1
Автор: Anand Murthy, Danielle Simonelli
Принадлежит: Individual

Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.

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Номер записи: 9
09-02-2012 дата публикации

Semiconductor substrate, semiconductor device, and method of producing semiconductor substrate

Номер: US20120032312A1
Автор: Hitoshi Goto, Syouji Nogami, Takumi Shibata, Tsuyoshi Yamamoto
Принадлежит: Denso Corp, Sumco Corp

A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S 1 ) of forming a first epitaxial layer; a trench forming step (S 2 ) of forming trenches in the first epitaxial layer; and epitaxial layer forming steps (S 3, S 4, S 5 ) of forming epitaxial layers on the first epitaxial layer and inside the trenches, using a plurality of growth conditions including differing growth rates, so as to fill the trenches, and keeping the concentration of dopant taken into the epitaxial layers constant in the plurality of growth conditions.

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Номер записи: 10
09-02-2012 дата публикации

Delivery device and method of use thereof

Номер: US20120034378A1
Автор: Egbert Woelk, Ronald L. DiCarlo, Jr.
Принадлежит: Rohm and Haas Electronic Materials LLC

A delivery device comprises an inlet port and an outlet port. The delivery device comprises an inlet chamber and an outlet chamber, with the outlet chamber being opposedly disposed to the inlet chamber and in fluid communication with the inlet chamber via a conical section. The outlet chamber comprises a labyrinth that is operative to prevent solid particles of a solid precursor compound contained in the delivery device from leaving the delivery device while at the same time permitting vapors of the solid precursor compound to leave the delivery device via the outlet port.

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Номер записи: 11
09-02-2012 дата публикации

Buffer layer deposition for thin-film solar cells

Номер: US20120034726A1
Автор: Jeffrey S. Britt, Scot Albright, Urs Schoop
Принадлежит: Global Solar Energy Inc

Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements.

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Номер записи: 12
09-02-2012 дата публикации

Diamond semiconductor element and process for producing the same

Номер: US20120034737A1
Автор: Kenji Ueda, Makoto Kasu, Toshiki Makimoto, Yoshiharu Yamauchi
Принадлежит: Nippon Telegraph and Telephone Corp

A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C.

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Номер записи: 13
16-02-2012 дата публикации

Thin film transistor and method for manufacturing thin film transistor

Номер: US20120037897A1
Автор: Kaoru Sugie, Osamu Shiino, Yoshinori Iwabuchi
Принадлежит: Bridgestone Corp

(1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and/or tin. (2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance. (3) Disclosed is a method for manufacturing a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said method for manufacturing a thin film transistor being characterized in that at least the channel layer or a part of the channel layer is formed by forming a metal oxide film by a sputtering process using an In-containing target without heating the substrate, and a heat treatment is carried out after forming the above-described elements on the substrate.

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Номер записи: 14
16-02-2012 дата публикации

Carburetor, carburetor for mocvd using same, center rod for use in the carburetor or carburetor for mocvd, method for dispersing carrier gas, and method for vaporizing carrier gas

Номер: US20120040098A1
Автор: Masaru Umeda, Masayuki Toda
Принадлежит: Wacom R&D Corp

Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.

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Номер записи: 15
16-02-2012 дата публикации

Method for forming silicon film having microcrystal structure

Номер: US20120040519A1
Автор: Ching-ting Lee
Принадлежит: Bureau of Energy Ministry of Economic Affairs

A method for forming a silicon film having a microcrystal structure is provided. The method includes following steps. A plasma-enhanced chemical vapor deposition system having a reaction chamber, a top electrode and a bottom electrode is provided. The top electrode and the bottom electrode are opposite and disposed in the reaction chamber. A substrate is disposed on the bottom electrode. A silane gas is applied into the reaction chamber. A silicon film having a microcrystal structure is formed by simultaneously irradiating the silane gas in the reaction chamber by a carbon dioxide laser and performing a plasma-enhanced chemical vapor deposition step.

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Номер записи: 16
23-02-2012 дата публикации

Tailoring the band gap of solar cells made of liquid silane by adding germanium

Номер: US20120042951A1
Автор: Bernhard Stuetzel, Wolfgang Fahrner
Принадлежит: EVONIK DEGUSSA GmbH

The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e.g., in the production of a solar cell comprising a step in which a substrate is coated with a liquid-silane formulation, the invention being characterized in that the formulation also contains at least one germanium compound. The invention further relates to the method for producing such a photovoltaic device.

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Номер записи: 17
23-02-2012 дата публикации

Systems and methods for preparing epitaxially textured polycrystalline films

Номер: US20120045191A1
Автор: James S. Im
Принадлежит: Columbia University of New York

The disclosed subject matter relates to systems and methods for preparing epitaxially textured polycrystalline films. In one or more embodiments, the method for making a textured thin film includes providing a precursor film on a substrate, the film includes crystal grains having a surface texture and a non-uniform degree of texture throughout the thickness of the film, wherein at least a portion of the this substrate is transparent to laser irradiation; and irradiating the textured precursor film through the substrate using a pulsed laser crystallization technique at least partially melt the film wherein the irradiated film crystallizes upon cooling to form crystal grains having a uniform degree of texture.

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Номер записи: 18
01-03-2012 дата публикации

Electronic device, manufacturing method of electronic device, and sputtering target

Номер: US20120049183A1
Автор: Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400° C. to 700° C., such as zinc, is added to gallium oxide by a sputtering method with high mass-productivity which can be applied to a large-area substrate, such as a DC sputtering method or a pulsed DC sputtering method. This film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film. Another portion of the film has a decreased concentration of the added material and a sufficiently high insulating property; therefore, it can be used for a gate insulator of a semiconductor device, or the like.

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Номер записи: 19
08-03-2012 дата публикации

Method for manufacturing semiconductor device

Номер: US20120058598A1
Автор: Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

Electrical characteristics of transistors using an oxide semiconductor are greatly varied in a substrate, between substrates, and between lots, and the electrical characteristics are changed due to heat, bias, light, or the like in some cases. In view of the above, a semiconductor device using an oxide semiconductor with high reliability and small variation in electrical characteristics is manufactured. In a method for manufacturing a semiconductor device, hydrogen in a film and at an interface between films is removed in a transistor using an oxide semiconductor. In order to remove hydrogen at the interface between the films, the substrate is transferred under a vacuum between film formations. Further, as for a substrate having a surface exposed to the air, hydrogen on the surface of the substrate may be removed by heat treatment or plasma treatment.

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Номер записи: 20
15-03-2012 дата публикации

Optical device and method of making

Номер: US20120064655A1
Автор: Aravinda Kar, Nathaniel R. Quick
Принадлежит: UNIVERSITY OF CENTRAL FLORIDA

An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.

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Номер записи: 21
15-03-2012 дата публикации

Manufacturing method of semiconductor device

Номер: US20120064703A1
Автор: Katsuaki TOCHIBAYASHI, Masami Jintyou, Toru Arakawa, Yamato Aihara
Принадлежит: Semiconductor Energy Laboratory Co Ltd

An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

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Номер записи: 22
22-03-2012 дата публикации

Surface wave plasma cvd apparatus and film forming method

Номер: US20120067281A1
Автор: Masayasu Suzuki
Принадлежит: Shimadzu Corp

A surface wave plasma CVD apparatus includes a waveguide that is connected to a microwave source and formed of a plurality of slot antennae; a dielectric member that introduces microwaves emitted from the plurality of slot antennae into a plasma processing chamber to generate surface wave plasma; a moving device that reciprocatory moves a substrate-like subject of film formation such that the subject of film formation passes a film formation processing region that faces the dielectric member; and a control device that controls the reciprocatory movement of the subject of film formation by the moving device depending on film forming conditions to perform film formation on the subject of film formation.

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Номер записи: 23
22-03-2012 дата публикации

Vacuum Processing Apparatus, Vacuum Processing Method, and Micro-Machining Apparatus

Номер: US20120071003A1
Автор: Kazuya Dobashi, Satohiko Hoshino, Takashi Fuse, Takehiko Senoo, Yu Yoshino
Принадлежит: Individual

Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF 3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged from the nozzle part under a vacuum atmosphere. By doing this, the mixed gas is adiabatically expanded and the Ar atoms or ClF 3 molecules are combined, which become a gas cluster. The gas cluster is irradiated to the surface of the silicon substrate without being ionized and, as a result, the surface of the silicon surface becomes a porous state. Then, lithium is grown on the surface of the silicon substrate in a separate vacuum chamber 41 by sputtering without breaking the vacuum.

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Номер записи: 24
29-03-2012 дата публикации

Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate

Номер: US20120077346A1
Автор: Makoto Sasaki, Shin Harada
Принадлежит: Sumitomo Electric Industries Ltd

An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.

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Номер записи: 25
05-04-2012 дата публикации

Fabrication of cis or cigs thin film for solar cells using paste or ink

Номер: US20120080091A1
Автор: Byoung Koun Min, Se Jin Park
Принадлежит: Korea Advanced Institute of Science and Technology KAIST, Korea Institute of Energy Research KIER

Provided is a method for preparing a copper indium selenide (CIS) or copper indium gallium selenide (CIGS) thin film, including: (1) mixing Cu, In and Ga precursors in a solvent and adding a polymer binder to obtain a paste or ink; (2) coating the obtained CIG precursor paste or ink on a conductive substrate by printing, spin coating or spraying and heat-treating the same under air or oxygen gas atmosphere to remove remaining organic substances and obtain a CIG mixed oxide thin film; (3) heat-treating the obtained CIG mixed oxide thin film under hydrogen or sulfurizing gas atmosphere to obtain a reduced or sulfurized CIG mixed thin film; and (4) heat-treating the obtained reduced or sulfurized CIG mixed thin film under selenium-containing gas atmosphere to obtain a CIGS thin film. Since residual carbon resulting from organic additives, which is the biggest problem in the existing paste coating techniques, can be reduced remarkably, and CIGS crystal size can be improved, the disclosed method can improve efficiency of CIGS solar cells.

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Номер записи: 26
12-04-2012 дата публикации

Heterogeneous substrate, nitride-based semiconductor device using same, and manufacturing method thereof

Номер: US20120086017A1
Автор: Hyung Do YOON, Jae Hyoun Park, Kwang Hyeon BAIK, Sung Min Hwang, Yong Gon SEO
Принадлежит: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar plane and a semi-polar plane is prepared, and a nitride-based nucleation layer is formed on the plane of the base substrate. A first buffer layer is grown faster in the vertical direction than in the lateral direction on the nucleation layer. A lateral growth layer is grown faster in the lateral direction than in the vertical direction on the first buffer layer. A second buffer layer is formed on the lateral growth layer. A silicon nitride layer having a plurality of holes may be formed between the lateral growth layer on the first buffer layer and the second buffer layer.

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Номер записи: 27
19-04-2012 дата публикации

IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N

Номер: US20120091467A1
Автор: Arpan Chakraborty, James S. Speck, Kwang-Choong Kim, Steven P. DenBaars, Umesh K. Mishra
Принадлежит: UNIVERSITY OF CALIFORNIA

A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiN x ) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiN x nanomask layer.

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Номер записи: 28
19-04-2012 дата публикации

Strained structure of a p-type field effect transistor

Номер: US20120091540A1
Автор: Chun-Fai Cheng, Ka-Hing Fung, Li-Ping Huang, Wei-Yuan Lu
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

In a p-type field effect transistor, a pair of spacers are formed over the top surface of a substrate. A channel recess cavity includes an indentation in the substrate top surface between the pair of spacers. A gate stack has a bottom portion in the channel recess cavity and a top portion extending outside the channel recess cavity. A source/drain (S/D) recess cavity has a bottom surface and sidewalls below the substrate top surface. The S/D recess cavity has a portion extending below the gate stack. A strained material is filled the S/D recess cavity

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Номер записи: 29
26-04-2012 дата публикации

Semiconductor device and manufacturing method thereof

Номер: US20120097960A1
Автор: Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217 - 220 provided in an n-channel TFT (pixel TFT) 304 forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.

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Номер записи: 30
03-05-2012 дата публикации

Group iii nitride semiconductor element and epitaxial wafer

Номер: US20120104433A1
Автор: Fumitake Nakanishi, Masaki Ueno, Yohei Enya, Yusuke Yoshizumi
Принадлежит: Sumitomo Electric Industries Ltd

A primary surface 23 a of a supporting base 23 of a light-emitting diode 21 a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25 a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane S R3 shown in FIG. 5 ) of the GaN supporting base and the (0001) plane of a buffer layer 33 a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane S R4 shown in FIG. 5 ) and the (0001) plane of a well layer 37 a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.

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Номер записи: 31
03-05-2012 дата публикации

Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device

Номер: US20120104558A1
Автор: Keiji Ishibashi
Принадлежит: Sumitomo Electric Industries Ltd

In a semiconductor device 100 , it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×10 10 pieces/cm 2 to 2000×10 10 pieces/cm 2 of sulfide in terms of S and 2 at % to 20 at % of oxide in terms of O in a surface layer 12 . By thus preventing C from piling up, a high-resistivity layer is prevented from being formed on the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10 . Accordingly, it is possible to reduce electrical resistance at the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10 , and improve the crystal quality of the epitaxial layer 22 . Consequently, it is possible to improve the emission intensity and yield of the semiconductor device 100.

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Номер записи: 32
10-05-2012 дата публикации

Formation of a graphene layer on a large substrate

Номер: US20120112164A1
Автор: Alfred Grill, Christos D. Dimitrakopoulos, Jack O. Chu, Marcus O. Freitag, Robert L. Wisnieff, Timothy J. McArdle
Принадлежит: International Business Machines Corp

A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer.

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Номер записи: 33
10-05-2012 дата публикации

Group-iii nitride semiconductor device, method for fabricating group-iii nitride semiconductor device, and epitaxial substrate

Номер: US20120112203A1
Автор: Koji Nishizuka, Takamichi Sumitomo, Takashi Kyono, Yohei Enya, Yusuke Yoshizumi
Принадлежит: Sumitomo Electric Industries Ltd

Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×10 17 cm −3 , and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.

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Номер записи: 34
10-05-2012 дата публикации

Film forming method

Номер: US20120114869A1
Автор: Hidenori Miyoshi, Masamichi Hara
Принадлежит: Tokyo Electron Ltd

Disclosed is a film-forming method wherein a manganese-containing film is formed on a substrate having a surface to which an insulating film and a copper wiring line are exposed. The film-forming method includes forming a manganese-containing film on the copper wiring line by a CVD method which uses a manganese compound.

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Номер записи: 35
17-05-2012 дата публикации

Selenization of precursor layer containing culns2 nanoparticles

Номер: US20120122268A1
Автор: Hugh Hillhouse, Qijie Guo, Rakesh Agrawal
Принадлежит: PURDUE RESEARCH FOUNDATION

A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS 2 , CuIn(S y ,Se 1−y ) 2 , CuGaS 2 , CuGa(S y ,Se 1−y ) 2 , Cu(In x Ga 1−x )S 2 , and Cu(In x Ga 1−x )(S y ,Se 1−y ) 2 nanoparticles and combinations thereof, wherein 0≦x≦1 and 1≦y≦0.

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Номер записи: 36
17-05-2012 дата публикации

System and Method for Transferring Substrates in Large Scale Processing of CIGS and/or CIS Devices

Номер: US20120122304A1
Автор: Robert D. Wieting
Принадлежит: CM Manufacturing Inc

The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to at least initiate formation of a copper indium diselenide film on each of the substrates.

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Номер записи: 37
31-05-2012 дата публикации

Coating device and coating method

Номер: US20120135144A1
Автор: Artur Laukart, Lothar Schäfer, Markus Armgardt, Markus Hofer, Tino Harig
Принадлежит: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV

A coating installation includes at least one recipient which can be evacuated and which is provided to receive a substrate, at least one gas supply device which can introduce at least one gaseous precursor into the recipient, and at least one activation device which contains at least one heatable activation element, the end thereof being secured to a securing point on a support element. A shielding element which can protect at least the securing point at least partially against the effect of the gaseous precursor is provided. The shielding element has a longitudinal extension having a first side and a second side, the first side being arranged on the support element and a locking element being arranged on the second side of the shielding element, the locking element having at least one outlet. At least one separation wall is arranged inside the shielding element, the wall separating the inner volume of the shielding element into a first partial volume and into a second partial volume.

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Номер записи: 38
31-05-2012 дата публикации

Method and System of Improved Uniformity Testing

Номер: US20120136601A1
Автор: Charlene Chen, Chi-I Lang, Tony P. Chiang, Yun Wang
Принадлежит: Intermolecular Inc

A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

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Номер записи: 39
07-06-2012 дата публикации

SYNTHESIS OF MULTINARY CHALCOGENIDE NANOPARTICLES COMPRISING Cu, Zn, Sn, S, AND Se

Номер: US20120138866A1
Автор: Hugh W. Hillhouse, Qijie Guo, Rakesh Agrawal
Принадлежит: PURDUE RESEARCH FOUNDATION

Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.

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Номер записи: 40
07-06-2012 дата публикации

Semiconductor device and method for forming the same

Номер: US20120139016A1
Автор: Youfeng He
Принадлежит: Semiconductor Manufacturing International Beijing Corp

A semiconductor device and a method for forming the same are provided. The method includes: providing a substrate having a gate structure and first spacers on both sidewalls of the gate structure formed on a top surface of the substrate; forming first openings in the substrate by using the first spacers as a mask, wherein the first openings are located on both sides of the gate structure; forming second openings by etching the first openings with an etching gas, wherein each of the second openings is an expansion of a corresponding one of the first openings toward the gate structure and extends to underneath an adjacent first spacer; and forming epitaxial layers in the first openings and the second openings.

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Номер записи: 41
21-06-2012 дата публикации

Semiconductor Device And Method Of Manufacturing The Same

Номер: US20120153261A1
Автор: Hyun-gi Hong, Jun-Youn Kim, Su-hee Chae, Young-jo Tak
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Example embodiments relate to a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device may include a pre-seeding layer and a nucleation layer. The pre-seeding layer may include a first material for pre-seeding and a second material for masking so as to reduce tensile stress.

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Номер записи: 42
28-06-2012 дата публикации

Variable-Density Plasma Processing of Semiconductor Substrates

Номер: US20120164834A1
Автор: Douglas Keil, Edward Augustyniak, Kevin Jennings, Mohamed Sabri, Sunil Kapoor
Принадлежит: Novellus Systems Inc

Methods and hardware for generating variable-density plasmas are described. For example, in one embodiment, a process station comprises a showerhead including a showerhead electrode and a substrate holder including a mesa configured to support a substrate, wherein the substrate holder is disposed beneath the showerhead. The substrate holder includes an inner electrode disposed in an inner region of the substrate holder and an outer electrode being disposed in an outer region of the substrate holder. The process station further comprises a plasma generator configured to generate a plasma in a plasma region disposed between the showerhead and the substrate holder, and a controller configured to control the plasma generator, the inner electrode, the outer electrode, and the showerhead electrode to effect a greater plasma density in an outer portion of the plasma region than in an inner portion of the plasma region.

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Номер записи: 43
05-07-2012 дата публикации

Light emitting diode chip and method for manufacturing the same

Номер: US20120168797A1
Автор: Po-Min Tu, Shih-Cheng Huang
Принадлежит: Advanced Optoelectronic Technology Inc

A method for manufacturing a light emitting diode chip, comprising steps: providing a substrate with a first patterned blocking layer formed thereon; growing a first n-type semiconductor layer on the substrate between the constituting parts of first patterned blocking layer, and stopping the growth of the first n-type semiconductor layer before the first n-type semiconductor layer completely covers the first patterned blocking layer; removing the first patterned blocking layer, whereby a plurality of first holes are formed at position where the first patterned blocking layer is originally existed; continuing the growth of the first n-type semiconductor layer until the first holes are completely covered by the first n-type semiconductor layer; and forming an active layer and a p-type current blocking layer on the first n-type semiconductor layer successively.

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Номер записи: 44
12-07-2012 дата публикации

Semiconductor device and method for manufacturing the same

Номер: US20120175675A1
Автор: Haizhou Yin, Huilong Zhu, Zhijiong Luo
Принадлежит: Institute of Microelectronics of CAS

A semiconductor device and a method for manufacturing the same are disclosed. The method comprises: forming at least one trench in a first semiconductor layer, wherein at least lower portions of respective sidewalls of the trench tilt toward outside of the trench; filling a dielectric material in the trench, thinning the first semiconductor layer so that the first semiconductor layer is recessed with respect to the dielectric material, and epitaxially growing a second semiconductor layer on the first semiconductor layer, wherein the first semiconductor layer and the semiconductor layer comprise different materials from each other. According to embodiments of the disclosure, defects occurring during the heteroepitaxial growth can be effectively suppressed.

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Номер записи: 45
12-07-2012 дата публикации

Deposition of group iv metal-containing films at high temperature

Номер: US20120175751A1
Автор: Changhee Ko, Julien Gatineau
Принадлежит: Individual

Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films{nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing fvm depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD.

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Номер записи: 46
12-07-2012 дата публикации

Methods of manufacturing solar cell

Номер: US20120178205A1
Автор: Yong-Duck Chung
Принадлежит: Electronics and Telecommunications Research Institute ETRI

Provided is a method of manufacturing a solar cell. The method includes: preparing a substrate with a rear electrode; and forming a copper indium gallium selenide (CIGS) based light absorbing layer on the rear electrode at a substrate temperature of room temperature to about 350° C., wherein the forming of the CIGS based light absorbing layer includes projecting an electron beam on the CIGS based light absorbing layer.

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Номер записи: 47
12-07-2012 дата публикации

Manufacturing method of the semiconductor device

Номер: US20120178249A1
Автор: Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

The semiconductor device is manufactured through the following steps: after first heat treatment is performed on an oxide semiconductor film, the oxide semiconductor film is processed to form an oxide semiconductor layer; immediately after that, side walls of the oxide semiconductor layer are covered with an insulating oxide; and in second heat treatment, the side surfaces of the oxide semiconductor layer are prevented from being exposed to a vacuum and defects (oxygen deficiency) in the oxide semiconductor layer are reduced.

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Номер записи: 48
12-07-2012 дата публикации

Compositions and methods of use for forming titanium-containing thin films

Номер: US20120178266A1
Автор: Andrew Kingsley, Peter Nicholas Heys, Rajesh Odedra
Принадлежит: Sigma Aldrich Co LLC

Compositions and methods for forming titanium-containing thin films are provided. The compositions comprise at least one precursor selected from the group consisting of (methylcyclopentadienyl)Ti(NMe 2 ) 3 , (ethylcyclopentadienyl)Ti(NMe 2 ) 3 , (isopropylcyclopentadienyl)Ti(NMe 2 ) 3 , (methylcyclopentadienyl)Ti(NEt 2 ) 3 , (methylcyclopentadienyl)Ti(NMeEt) 3 , (ethylcyclopentadienyl)Ti(NMeEt) 3 and (methylcyclopentadienyl)Ti(OMe) 3 ; and at least one liquification co-factor other than the at least one precursor; wherein the at least one liquification co-factor is present in amount sufficient to co-act with the at least one precursor, and in combination with the at least one precursor, forms a liquid composition.

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Номер записи: 49
19-07-2012 дата публикации

Method of Fabricating Silicon Quantum Dot Layer and Device Manufactured Using the Same

Номер: US20120181503A1
Автор: Czang-Ho Lee, Dong-Jin Kim, Joon-Young Seo
Принадлежит: SAMSUNG ELECTRONICS CO LTD, Samsung SDI Co Ltd

Disclosed are a method of fabricating a silicon quantum dot layer and a device manufactured using the same. A first capping layer is formed on a substrate, and a silicon-containing precursor layer is formed on the first capping layer. A second capping layer is formed on the silicon-containing precursor layer. The first capping layer, the silicon-containing precursor layer, and the second capping layer are irradiated to convert the silicon-containing precursor layer into a stack including a first poly-crystalline silicon layer, a silicon quantum dot layer on the first poly-crystalline silicon layer, and a second poly-crystalline silicon layer on the silicon quantum dot layer.

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Номер записи: 50
19-07-2012 дата публикации

Semiconductor element and manufacturing method of the same

Номер: US20120181531A1
Автор: Akira Ohtomo, Atsushi Tsukazaki, Ken Nakahara, Masashi Kawasaki, Shunsuke Akasaka
Принадлежит: ROHM CO LTD

A semiconductor element includes a semiconductor layer mainly composed of Mg x Zn 1-x O (0<=x<1), in which manganese contained in the semiconductor layer as impurities has a density of not more than 1×10 16 cm −3 .

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Номер записи: 51
26-07-2012 дата публикации

Hybrid Silicon Wafer

Номер: US20120187409A1
Автор: Hiroshi Takamura, Ryo Suzuki
Принадлежит: JX Nippon Mining and Metals Corp

A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120° to 150° relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer.

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Номер записи: 52
26-07-2012 дата публикации

Method for lift-off of light-emitting diode substrate

Номер: US20120190148A1
Автор: Jiansen Zheng, Jyh-Chiarng Wu, Kang-Wei Peng, Kechuang Lin, Sheng-Hsien Hsu, Su-Hui Lin
Принадлежит: Xiamen Sanan Optoelectronics Technology Co Ltd

The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency.

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Номер записи: 53
26-07-2012 дата публикации

Mask and method of manufacturing array substrate using the same

Номер: US20120190157A1
Автор: Chong-Chul Chai, Soo-Wan Yoon, Yeong-keun Kwon
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A mask includes: a substrate that includes a central area and a peripheral area disposed around the central area; and lenses disposed in rows and columns, in the central area and the peripheral area. The lenses of opposing sides of the peripheral area may be disposed in different rows or columns. For a given amount of input light, the lenses of the peripheral area may focus less light on a substrate than the lenses of the central area. The mask may be disposed over the substrate in different positions, and then the substrate may be irradiated through the mask, while the mask is in each of the positions. The peripheral portion of the mask may be disposed over the same area of the substrate, while the mask is in different ones of the positions.

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Номер записи: 54
02-08-2012 дата публикации

Semiconductor device and method for manufacturing same

Номер: US20120193633A1
Автор: Akihiko Kohno, Kohichi Tanaka, Toshio Mizuki
Принадлежит: Sharp Corp

A method for fabricating a semiconductor device according to the present invention includes the steps of: (a) providing a substrate ( 11 a ) in a chamber ( 26 ); (b) supplying a microwave into the chamber ( 26 ) through a dielectric plate ( 24 ), of which one surface that faces the chamber is made of alumina, thereby depositing a microcrystalline silicon film ( 14 ) with an aluminum concentration of 1.0×10 16 atoms/cm 3 or less on the substrate ( 11 a ) by high-density plasma CVD process; and (c) making a thin-film transistor that uses the microcrystalline silicon film as its active layer. As a result, a semiconductor device including a TFT that uses a microcrystalline silicon film with a mobility of more than 0.5 cm 2 /Vs as its active layer is obtained.

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Номер записи: 55
02-08-2012 дата публикации

Frequency selective imaging system

Номер: US20120194713A1
Автор: Jeffrey H. Hunt
Принадлежит: Boeing Co

An apparatus, system, and method are disclosed for a frequency selective imager. In particular, the frequency selective imager includes an array of pixels arranged in a focal plane array. Each pixel includes at least one nanoparticle-sized diameter thermoelectric junction that is formed between nanowires of different compositions. When a nanoparticle-sized diameter thermoelectric junction senses a photon, the nanoparticle-sized diameter thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. In one or more embodiments, the frequency selective imager is a frequency selective optical imager that is used to sense photons having optical frequencies. In at least one embodiment, at least one of the nanowires in the frequency selective imager is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te).

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Номер записи: 56
02-08-2012 дата публикации

Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device

Номер: US20120196395A1
Автор: Goh Matsunobu, Katsuya Shirai, Koichi Tatsuki, Koichi Tsukihara, Nobuhiko Umezu, Shin Hotta, Yoshio Inagaki
Принадлежит: Sony Corp

A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.

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Номер записи: 57
02-08-2012 дата публикации

Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ uv cure

Номер: US20120196450A1
Автор: Derek R. Witty, Hichem M&#39;Saad, Isabelita Roflox, Li-Qun Xia, Mei-Yee Shek, Mihaela Balseanu, Victor Nguyen
Принадлежит: Applied Materials Inc

Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

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Номер записи: 58
09-08-2012 дата публикации

Process for producing doped silicon layers, silicon layers obtainable by the process and use thereof

Номер: US20120199832A1
Автор: Bernhard Stuetzel, Wolfgang Fahrner
Принадлежит: EVONIK DEGUSSA GmbH

The present invention relates to a process for producing a doped silicon layer on a substrate, comprising the steps of (a) providing a liquid silane formulation and a substrate, (b) applying the liquid silane formulation to the substrate, (c) introducing electromagnetic and/or thermal energy to obtain an at least partly polymorphic silicon layer, (d) providing a liquid formulation which comprises at least one aluminium-containing metal complex, (e) applying this formulation to the silicon layer obtained after step (c) and then (f) heating the coating obtained after step (e) by introducing electromagnetic and/or thermal energy, which decomposes the formulation obtained after step (d) at least to metal and hydrogen, and then (g) cooling the coating obtained after step (f) to obtain an Al-doped or Al- and metal-doped silicon layer, to doped silicon layers obtainable by the process and to the use thereof for production of light-sensitive elements and electronic components.

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Номер записи: 59
09-08-2012 дата публикации

Method for Growth of Indium-Containing Nitride Films

Номер: US20120199952A1
Автор: Christiane Poblenz, Mark P. D&#39;Evelyn, Michael R. Krames
Принадлежит: Soraa Inc

A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.

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Номер записи: 60
16-08-2012 дата публикации

Scanned laser light source

Номер: US20120205347A1
Автор: Abhilash J. Mayur, Alexander Goldin, Dean C. Jennings, Leonid M. Tertitski, Mark Yam, Paul A. O&#39;Brien, Vernon Behrens
Принадлежит: Applied Materials Inc

The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

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Номер записи: 61
16-08-2012 дата публикации

Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the same

Номер: US20120205616A1
Автор: Chunhui Yan, Hongmei Wang, Jianping Zhang
Принадлежит: INVENLUX CORP

A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.

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Номер записи: 62
16-08-2012 дата публикации

Combined Injection Module For Sequentially Injecting Source Precursor And Reactant Precursor

Номер: US20120207926A1
Автор: Sang In LEE
Принадлежит: Synos Technology Inc

Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion.

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Номер записи: 63
23-08-2012 дата публикации

Low-temperature selective epitaxial growth of silicon for device integration

Номер: US20120210932A1
Автор: Alexander Reznicek, Ali Khakifirooz, Bahman Hekmatshoar-Tabari, Davood Shahrjerdi, Devendra K. Sadana, Ghavam G. Shahidi
Принадлежит: International Business Machines Corp

An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

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Номер записи: 64
30-08-2012 дата публикации

Composition and method for low temperature deposition of ruthenium

Номер: US20120216712A1
Автор: Ajit Paranjpe, Randhir Bubber, Vinayak V. Vats
Принадлежит: Veeco Instruments Inc

Composition and method for depositing ruthenium. A composition containing ruthenium tetroxide RuO 4 is used as a precursor solution 608 to coat substrates 400 via ALD, plasma enhanced deposition, and/or CVD. Periodic plasma densification may be used.

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Номер записи: 65
30-08-2012 дата публикации

Device and method for forming low-temperature polysilicon film

Номер: US20120220140A1
Автор: Koichi Kajiyama, Kuniyuki Hamano, Michinobu Mizumura
Принадлежит: Individual

Provided is a forming device and method making it possible to obtain a low-temperature polysilicon film in which the size of crystal grains fluctuates minimally, and is uniform. A mask has laser-light-blocking areas and laser-light-transmission areas arranged in the form of a grid such that the light-blocking areas and transmission areas are not adjacent to one another. Laser light is directed by the microlenses through the masks to planned channel-area-formation areas. The laser light transmitted by the transmission areas is directed onto an a-Si:H film, annealing and polycrystallzing the irradiated parts thereof. The mask is then removed, and when the entire planned channel-area-formation area is irradiated with laser light, the already-polycrystallized area, having a higher melting point, does not melt, while the area in an amorphous state melts and solidifies, leading to polycrystallization. The grain size of the polysilicon film obtained is regulated by the light-blocking areas and transmission areas and is thus controlled to a predetermined range.

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Номер записи: 66
06-09-2012 дата публикации

Method for producing a semiconductor component

Номер: US20120225544A1
Автор: Adolf Koller, Anton Mauder, Carsten Ahrens, Gerald Lackner, Hans-Joachim Schulze, Manfred Schneegans
Принадлежит: INFINEON TECHNOLOGIES AUSTRIA AG

Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×10 8 W/cm 2 .

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Номер записи: 67
20-09-2012 дата публикации

Light emitting element and method for manufacturing same

Номер: US20120235117A1
Автор: Katsuhiro Tomioka, Takashi Fukui
Принадлежит: Hokkaido University NUC

Disclosed is a light emitting element, which emits light with small power consumption and high luminance. The light emitting element has: a IV semiconductor substrate; two or more core multi-shell nanowires disposed on the IV semiconductor substrate; a first electrode connected to the IV semiconductor substrate; and a second electrode, which covers the side surfaces of the core multi-shell nanowires, and which is connected to the side surfaces of the core multi-shell nanowires. Each of the core multi-shell nanowires has: a center nanowire composed of a first conductivity type III-V compound semiconductor; a first barrier layer composed of the first conductivity type III-V compound semiconductor; a quantum well layer composed of a III-V compound semiconductor; a second barrier layer composed of a second conductivity type III-V compound semiconductor; and a capping layer composed of a second conductivity type III-V compound semiconductor.

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Номер записи: 68
20-09-2012 дата публикации

Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same

Номер: US20120238053A1
Автор: Erol Girt, Mariana Rodica Munteanu
Принадлежит: AQT SOLAR Inc

In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

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Номер записи: 69
20-09-2012 дата публикации

Method of Forming Epitaxial Film

Номер: US20120238080A1
Автор: Eric Ting-Shan Pan
Принадлежит: Individual

A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

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Номер записи: 70
27-09-2012 дата публикации

Substrate processing apparatus and solid raw material replenishing method

Номер: US20120240858A1
Автор: Goki KOYAMA, Tomoshi Taniyama
Принадлежит: HITACHI KOKUSAI ELECTRIC INC, Kitz SCT Corp

Disclosed is a substrate processing apparatus that includes: a processing chamber that accommodates a substrate; and a raw material supply system that sublimates a solid raw material to generate a gas raw material used for processing of the substrate, and supplies the generated gas raw material to the processing chamber. The raw material supply system includes: a solid raw material container that stores the solid raw material; a first piping connected between the solid raw material container and the processing chamber; and a second piping connected with the solid raw material container and equipped with an attachment portion to which a raw material replenishing container that holds the solid raw material for replenishment is attached.

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Номер записи: 71
27-09-2012 дата публикации

Semiconductor device and method for manufacturing same

Номер: US20120241753A1
Автор: Hideki Sakurai, Kazuhiro Akiyama
Принадлежит: Toshiba Corp

According to an embodiment, a semiconductor device includes a substrate, a nitride layer and a nitride semiconductor layer. The substrate includes an indented structure provided at a major surface. The nitride layer provided entirely on the major surface is at least one of polycrystalline and amorphous, and includes at least one of p-type impurity and n-type impurity. The nitride semiconductor layer is provided on the nitride layer.

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Номер записи: 72
27-09-2012 дата публикации

method for reducing internal mechanical stresses in a semiconductor structure and a low mechanical stress semiconductor structure

Номер: US20120241755A1
Автор: Alexey Romanov, Maxim A. Odnoblyudov, Vladislav E. Bougrov
Принадлежит: Optogan Oy

A semiconductor structure with low mechanical stresses, formed of nitrides of group III metals on a (0001) oriented foreign substrate ( 1 ) and a method for reducing internal mechanical stresses in a semiconductor structure formed of nitrides of group III metals on a (0001) oriented foreign substrate ( 1 ). The method comprises the steps of; growing nitride on the foreign substrate ( 1 ) to form a first nitride layer ( 2 ); patterning the first nitride layer ( 2 ) by selectively removing volumes of it to a predetermined depth from the upper surface of the first nitride layer ( 2 ), for providing relaxation of mechanical stress σ in the remaining portions of the layer between the removed volumes; and growing, on the first nitride layer ( 2 ), additional nitride until a continuous second nitride layer ( 8 ) is formed, the second nitride layer ( 8 ) enclosing voids ( 7 ) from the removed volumes under the second nitride layer ( 8 ) inside the semiconductor structure.

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Номер записи: 73
27-09-2012 дата публикации

Semiconductor devices and methods of fabricating the same

Номер: US20120241815A1
Автор: Dong Hyuk Kim, DongSuk Shin, Hoi Sung Chung, Myungsun Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.

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Номер записи: 74
27-09-2012 дата публикации

Heterostructure for electronic power components, optoelectronic or photovoltaic components

Номер: US20120241821A1
Автор: Chris Werkhoven, Fabrice Letertre, Ionut Radu, Jean-Marc Bethoux, Oleg Kononchuck
Принадлежит: Soitec SA

A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10 −3 ohm·cm and a thermal conductivity of greater than 100 W·m −1 ·K −1 , a bonding layer, a first seed layer of a monocrystalline material of composition Al x In y Ga (1-x-y) N, a second seed layer of a monocrystalline material of composition Al x In y Ga (1-x-y) N, and an active layer of a monocrystalline material of composition Al x In y Ga (1-x-y) N, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750° C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 Å, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohm·cm 2 .

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Номер записи: 75
27-09-2012 дата публикации

Tray for cvd and method for forming film using same

Номер: US20120244703A1
Автор: Takashi Nakayama, Takayuki Kihara, Tomoyuki Kabasawa
Принадлежит: Sumco Corp

A tray for film formation by a CVD method includes a tray main body ( 2 ) and a supporting member ( 3 ) mounted on the tray main body ( 2 ) for supporting a silicon wafer ( 5 ). The supporting member ( 3 ) has a holding portion ( 3 c ), on which the silicon wafer ( 5 ) is directly placed. The holding portion ( 3 c ) has its lower surface ( 3 d ) apart from a surface ( 2 a ) of the tray main body that is opposed to and apart from the supported silicon wafer ( 5 ), whereby the thickness distribution of an oxide film formed on the silicon wafer can be made uniform. The tray has a structure for reducing a contact area between the supporting member ( 3 ) and the tray main body ( 2 ), with the holding portion ( 3 c ) having a tilted surface with its inner circumferential side closer to the tray main body surface ( 2 a ) that is opposed to the silicon wafer.

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Номер записи: 76
04-10-2012 дата публикации

Apparatus for delivering a process gas

Номер: US20120247581A1
Автор: Iqbal A. Shareef, James V. Tietz, Richard J. Meinecke, Vermon Wong
Принадлежит: Individual

A processing system for delivering a process gas to a reaction chamber using a recipe having a recipe flow rate is provided. The processing system includes a gas flow delivery system configured for delivering the process gas, wherein said gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one sensor. The processing system also includes a programmed computing device configured for applying a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.

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Номер записи: 77
04-10-2012 дата публикации

Group iii nitride semiconductor multilayer structure and production method thereof

Номер: US20120248457A1
Автор: Kenzo Hanawa, Yasumasa Sasaki
Принадлежит: Showa Denko KK

According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.

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Номер записи: 78
04-10-2012 дата публикации

Plasma processing method and device isolation method

Номер: US20120252188A1
Автор: Kazuyoshi Yamazaki, Masaki Sano, Ryota YONEZAWA
Принадлежит: Tokyo Electron Ltd

A plasma processing method for use in device isolation by shallow trench isolation in which an insulating film is embedded in a trench formed in silicon and the insulating film is planarized to form a device isolation film, the method includes a plasma nitriding the silicon of an inner wall surface of the trench by using a plasma before embedding the insulating film in the trench. The plasma nitriding is performed by using a plasma of a processing gas containing a nitrogen-containing gas under conditions in which a processing pressure ranges from 1.3 Pa to 187 Pa and a ratio of a volumetric flow rate of the nitrogen-containing gas to a volumetric flow rate of the entire processing gas ranges from 1% to 80% such that a silicon nitride film is formed on the inner wall surface of the trench to have a thickness of 1 to 10 nm.

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Номер записи: 79
11-10-2012 дата публикации

Epitaxial growth method and devices

Номер: US20120256191A1
Автор: Anton Devilliers, Erik Byers, Scott Sills
Принадлежит: Individual

Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

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Номер записи: 80
18-10-2012 дата публикации

Annealing apparatus using two wavelengths of continuous wave laser radiation

Номер: US20120261395A1
Автор: Aaron Hunter, Abhilash J. Mayur, Bruce Adams, Dean Jennings, Haifan Liang, Joseph Michael Ranish, Mark Yam, Vijay Parihar
Принадлежит: Individual

A thermal processing apparatus and method in which a first laser source, for example, a CO 2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO 2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

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Номер записи: 81
18-10-2012 дата публикации

Semiconductor device and manufacturing method of the semiconductor device

Номер: US20120261760A1
Автор: Akira Katakami, Akiyoshi Hatada, Kazuya Okubo, Masaki HANEDA, Yuka Kase
Принадлежит: Fujitsu Semiconductor Ltd

A semiconductor device includes a semiconductor substrate, a device region including first and second parts, first and second gate electrodes formed in the first and the second parts, first and second source regions, first and second drain regions, first, second, third, and fourth embedded isolation film regions formed under the first source, the first drain, the second source, and the second drain regions, respectively. Further, the first drain region and the second source region form a single diffusion region, the second and the third embedded isolation film regions form a single embedded isolation film region, an opening is formed in a part of the single diffusion region so as to extend to the second and the third embedded isolation film regions, and the opening is filled with an isolation film.

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Номер записи: 82
18-10-2012 дата публикации

Process for preparing higher hydridosilanes

Номер: US20120263639A1
Автор: Guido Stochniol, Nicole Brausch, Thomas Quandt
Принадлежит: EVONIK DEGUSSA GmbH

The invention relates to a method for producing higher hydridosilane wherein at least one lower hydridosilane and at least one heterogeneous catalyst are brought to reaction, wherein the at least one catalyst comprises Cu, Ni, Cr and/or Co applied to a carrier and/or oxide of Cu, Ni, Cr and/or Co applied to a carrier, the hydridosilane that can be produced according to said method and use thereof.

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Номер записи: 83
18-10-2012 дата публикации

Method of Selective Photo-Enhanced Wet Oxidation for Nitride Layer Regrowth on Substrates

Номер: US20120264246A1
Автор: Jeng-Wei Yu, Lung-Han Peng, Po-Chun Yeh
Принадлежит: Opto Tech Corp

Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

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Номер записи: 84
25-10-2012 дата публикации

Semiconductor device and method for manufacturing semiconductor device

Номер: US20120267623A1
Автор: Akihiro Ishizuka, Atsuo Isobe, Shinya Sasagawa, Toshinari Sasaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device having a transistor including an oxide semiconductor film is disclosed. In the semiconductor device, the oxide semiconductor film is provided along a trench formed in an insulating layer. The trench includes a lower end corner portion and an upper end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, the upper end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the upper end corner portion.

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Номер записи: 85
01-11-2012 дата публикации

Semiconductor structure and method for manufacturing the same

Номер: US20120273840A1
Автор: Haizhou Yin, Huilong Zhu, Zhijiong Luo
Принадлежит: Institute of Microelectronics of CAS

A semiconductor structure and a method for manufacturing the same are disclosed. The method comprises: disposing a first dielectric material layer on a first semiconductor layer and defining openings in the first dielectric material layer; epitaxially growing a second semiconductor layer on the first semiconductor layer via the openings defined in the first dielectric material layer, wherein the second semiconductor layer and the first semiconductor layer comprise different materials from each other; and forming plugs of a second dielectric material in the second semiconductor layer at positions where the openings are defined in the first dielectric material layer and also at middle positions between adjacent openings. According to embodiments of the disclosure, defects occurring during the heteroepitaxial growth can be effectively suppressed.

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Номер записи: 86
01-11-2012 дата публикации

Integrated circuit device with well controlled surface proximity and method of manufacturing same

Номер: US20120273847A1
Автор: Chun-Fai Cheng, HUI Ouyang, Ming-Huan Tsai, Wei-Han Fan
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit devices. An exemplary integrated circuit device achieved by the method has a surface proximity of about 1 nm to about 3 nm and a tip depth of about 5 nm to about 10 nm. The integrated circuit device having such surface proximity and tip depth includes an epi source feature and an epi drain feature defined by a first facet and a second facet of a substrate in a first direction, such as a {111} crystallographic plane of the substrate, and a third facet of the substrate in a second direction, such as a { 100} crystallographic plane of the substrate.

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Номер записи: 87
01-11-2012 дата публикации

Method for making light emitting diode

Номер: US20120276669A1
Автор: Shou-Shan Fan, Yang Wei
Принадлежит: Hon Hai Precision Industry Co Ltd, TSINGHUA UNIVERSITY

A method of making a LED includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is placed on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the substrate. A reflector and a first electrode are deposited on the second semiconductor layer in that order. The substrate is removed. A second electrode is deposited on the first semiconductor layer.

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Номер записи: 88
01-11-2012 дата публикации

Manufacturing method of semiconductor device

Номер: US20120276694A1
Автор: Junichi Koezuka, Naoto Yamade, Shunpei Yamazaki, Yuhei Sato, Yutaka Okazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

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Номер записи: 89
08-11-2012 дата публикации

Semiconductor device with seg film active region

Номер: US20120280394A1
Автор: Young Bog Kim
Принадлежит: Hynix Semiconductor Inc

A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.

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Номер записи: 90
08-11-2012 дата публикации

Diode-Based Devices and Methods for Making the Same

Номер: US20120282718A1
Автор: Anthony J. Lochtefeld
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

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Номер записи: 91
08-11-2012 дата публикации

Method for reuse of wafers for growth of vertically-aligned wire arrays

Номер: US20120282761A1
Автор: Harry A. Atwater, Joshua M. Spurgeon, Katherine E. Plass, Nathan S. Lewis
Принадлежит: California Institute of Technology CalTech

Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.

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Номер записи: 92
15-11-2012 дата публикации

Method of manufacturing semiconductor device

Номер: US20120286260A1
Автор: Hiroyuki Tomatsu, Kosei Noda, Shunpei Yamazaki, Tatsuya Honda, Yusuke Sekine
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.

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Номер записи: 93
15-11-2012 дата публикации

Amorphous oxide thin film, thin film transistor using the same, and method for manufacturing the same

Номер: US20120286265A1
Автор: Kazushige Takechi, Mitsuru Nakata
Принадлежит: NEC Corp

A thin film transistor using an amorphous oxide thin film for an active layer, wherein: the amorphous oxide thin film includes, as main components, indium (In), oxygen (O), and a metal element (M) selected from the group consisting of silicon (Si), aluminum (Al), germanium (Ge), tantalum (Ta), magnesium (Mg) and titanium (Ti); an atomic ratio of M to In in this amorphous oxide thin film is 0.1 or more and 0.4 or less; and carrier density in the amorphous oxide thin film is 1×10 15 cm −3 or more and 1×10 19 cm −1 or less.

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Номер записи: 94
15-11-2012 дата публикации

Nanoscale chemical templating with oxygen reactive materials

Номер: US20120289035A1
Автор: Brent A. Wacaser, Devendra K. Sadana, Maha M. Khayyat
Принадлежит: International Business Machines Corp

A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.

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Номер записи: 95
22-11-2012 дата публикации

Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer

Номер: US20120292649A1
Автор: Hiroshi Ono, Hung Hung, Jongil Hwang, Naoharu Sugiyama, Satoshi MITSUGI, Shinya Nunoue, Taisuke Sato, Tomonari SHIODA
Принадлежит: Toshiba Corp

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.

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Номер записи: 96
29-11-2012 дата публикации

Vapor Delivery Device, Methods of Manufacture And Methods of Use Thereof

Номер: US20120298207A1
Автор: Egbert Woelk, Ronald L. DiCarlo, Jr.
Принадлежит: Rohm and Haas Electronic Materials LLC

A method comprises transporting a first stream of a carrier gas to a delivery device that contains a solid precursor compound. The first stream of carrier gas is at a temperature greater than or equal to 20° C. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream and the second stream are combined to form a third stream, such that the dewpoint of the vapor of the solid precursor compound in the third stream is lower than the ambient temperature. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

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Номер записи: 97
06-12-2012 дата публикации

Substrate and method for fabricating the same

Номер: US20120305401A1
Автор: Akihiro Itoh, Nobuaki Nagao, Takahiro Hamada
Принадлежит: Individual

A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.

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Номер записи: 98
06-12-2012 дата публикации

Nitride semiconductor light emitting element and method for manufacturing the same

Номер: US20120305934A1
Автор: Mayuko Fudeta
Принадлежит: Sharp Corp

A nitride semiconductor light emitting element has: a substrate for growth; an n-type nitride semiconductor layer formed on the substrate for growth; a light emitting layer formed on the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer formed on the light emitting layer, wherein pipe holes are formed at a density of 5000 pipe holes/cm 2 or less, each of which extends substantially vertically from a surface of the n-type nitride semiconductor layer on the light emitting layer side toward the substrate and has a diameter of 2 to 200 nm.

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Номер записи: 99
06-12-2012 дата публикации

Semiconductor structure and method for forming the same

Номер: US20120305986A1
Автор: Jing Wang, Lei Guo
Принадлежит: TSINGHUA UNIVERSITY

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a wafer; a plurality of convex structures formed on the wafer, in which every two adjacent convex structures are separated by a cavity in a predetermined pattern and arranged in an array, and the cavity between every two adjacent convex structures is less than 50 nm in width; and a first semiconductor film formed on the plurality of convex structures, in which a part of the first semiconductor film is spaced apart from the wafer.

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Номер записи: 100