Second-harmonic generation nonliner frenquency converter

A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.

LIGHT EMITTING DIODE WITH LARGE VIEWING ANGLE AND FABRICATING METHOD THEREOF

A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer. 1. A light emitting diode , comprising:a substrate;a plurality of pillar structures formed on the substrate, wherein each of the pillar structures comprises a first type semiconductor layer, an active layer, and a second type semiconductor layer, wherein the first type semiconductor layers are formed on the substrate, and the pillar structures are electrically connected with each other through the first type semiconductor layers;a filler structure formed between the pillar structures;a transparent conductive layer, wherein the filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer;a first electrode in contact with the transparent conductive layer; anda second electrode in contact with the first type semiconductor layer.2. The light emitting diode as claimed in claim 1 , wherein the first type semiconductor layer is an N-type layer claim 1 , and the second type semiconductor layer is a P-type layer.3. The light emitting diode as claimed in claim 1 , wherein the pillar structure has a width in a range between λ/2 and 20 μm claim ...

Method of Selective Photo-Enhanced Wet Oxidation for Nitride Layer Regrowth on Substrates

Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Method of Separating Nitride Films from the Growth Substrates by Selective Photo-Enhanced Wet Oxidation

Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Method of separating nitride films from growth substrates by selective photo-enhanced wet oxidation and associated semiconductor structure

Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure.

Phase Modulation Module and Projector Comprising the Same

An optical phase modulation module and a projector comprising the same are provided. The optical phase modulation module comprises a transparent thin film with an electro-optic effect, a plurality of first upper electrodes, a plurality of second upper electrodes and a plurality of lower electrodes. The transparent thin film with the electro-optic effect has a top surface and a bottom surface. The first upper electrodes are formed on the top surface. The second upper electrodes are formed on the top surface and arranged alternately with the first upper electrodes. The lower electrodes are formed on the bottom surface. A first voltage difference exists between the first upper electrodes and the bottom electrodes, while a second voltage difference exists between the second upper electrodes and the bottom electrodes. Two different electric fields are produced within the transparent thin film with the electro-optic effect by the first voltage difference and the second voltage difference respectively. 1. An optical phase modulation module , comprising:a transparent thin film with an electro-optic effect, having a top surface and a bottom surface;a plurality of first upper electrodes, being formed on the top surface;a plurality of second upper electrodes, being formed on the top surface and arranged alternately with the first upper electrodes; anda plurality of lower electrodes, being formed on the bottom surface,wherein a first voltage difference exists between the first upper electrodes and the lower electrodes, a second voltage difference exists between the second upper electrodes and the lower electrodes, and two different electric fields are produced within the transparent thin film with the electro-optic effect by the first voltage difference and the second voltage difference.2. The optical phase modulation module as claimed in claim 1 , wherein the transparent thin film with the electro-optic effect has a longitudinal section in the form of a curved surface.3. The ...

Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure

Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Substrate with lithium imide layer, led with lithium imide layer and manufacturing method thereof

A substrate with a lithium imide layer, a LED with a lithium imide layer and a manufacturing method of the LED are provided. The substrate includes a lithium niobate layer and a lithium imide layer. The lithium imide layer is formed on a surface of the lithium niobate layer.

WHITE LED

A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer. 1. A white LED , comprising:a P-type layer;a tunneling structure disposed over the P-type layer, wherein the tunneling structure comprises a first barrier layer, an active layer and a second barrier layer, wherein the first barrier layer comprises a first metal oxide layer, the active layer comprises a second metal oxide layer, and the second barrier layer comprises a third metal oxide layer;an N-type layer disposed over the tunneling structure;an N-type electrode contacted with the N-type layer; anda P-type electrode contacted with the P-type layer,wherein an energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer, and the energy gap of the second metal oxide layer is lower than an energy gap of the third metal oxide layer.2. The white LED as claimed in claim 1 , wherein the second metal oxide layer is a zinc oxide layer or an indium gallium zinc oxide layer.3. The white LED as claimed in claim 1 , wherein a conduction band or a valence band of the second metal oxide layer has a wide energy band distribution.4. The white LED as claimed in claim 3 , wherein the wide energy band distribution is a Gaussian ...

White led chip and white led packaging device

A white LED chip includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first material layer, the active layer includes a second material layer, and the second barrier layer includes a third material layer. The N-type layer is disposed over the tunneling structure. An energy gap of the second material layer is lower than an energy gap of the first material layer and an energy gap of the third material layer. Each of the first material layer, the second material layer and the third material layer is a metal oxide layer, a metal nitride layer or a metal oxynitride layer.

Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure

Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

TOP-EMITTING LIGHT-EMITTING DIODE

A top-emitting light-emitting diode includes a glass substrate, a polysilicon layer, a white light emitting layer and a transparent conductive layer. The polysilicon layer is formed on a first surface of the glass substrate. Moreover, plural sub-wavelength structures are discretely arranged on a surface of the polysilicon layer at regular intervals. The white light emitting layer is formed over the polysilicon layer and the plural sub-wavelength structures. The transparent conductive layer is formed over the white light emitting layer. 1. A top-emitting light-emitting diode , comprising:a glass substrate;a polysilicon layer formed on a first surface of the glass substrate, wherein plural sub-wavelength structures are discretely arranged on a surface of the polysilicon layer at regular intervals;a white light emitting layer formed over the polysilicon layer and the plural sub-wavelength structures; anda transparent conductive layer formed over the white light emitting layer.2. The top-emitting light-emitting diode as claimed in claim 1 , wherein the polysilicon layer claim 1 , the white light emitting layer and the transparent conductive layer are collaboratively formed as a microcavity.3. The top-emitting light-emitting diode as claimed in claim 1 , wherein a total thickness of the polysilicon layer claim 1 , the white light emitting layer and the transparent conductive layer is not larger than 2λ/n claim 1 , wherein λ is a wavelength in a range between 500 nm and 600 nm claim 1 , and n is a refractive index of the microcavity corresponding to the wavelength.4. The top-emitting light-emitting diode as claimed in claim 3 , wherein the total thickness of the polysilicon layer claim 3 , the white light emitting layer and the transparent conductive layer is equal to λ/n or 2λ/n.5. The top-emitting light-emitting diode as claimed in claim 1 , wherein after a laser annealing process is performed to cyclically irradiate a laser beam on the polysilicon layer claim 1 , the ...

Method of forming a gate insulator in group III-V nitride semiconductor devices

A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

White LED

A white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is in contact with the P-type layer. The tunneling structure is a stack structure comprising a first barrier layer, a first active layer and a second barrier layer. At least one of the first barrier layer, the first active layer and the second barrier layer is a first metal nitride oxide layer. The N-type layer is in contact with the tunneling structure. The N-type electrode is in contact with the N-type layer. The P-type electrode is in contact with the P-type layer.

Phase-change material, memory unit and method for electrically storing/reading data

A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.

Method for etching nitride

Second-harmonic generation nonliner frenquency converter

Method of separating nitride films from growth substrates by selective photo-enhanced wet oxidation

Thin film transistor

Apparatus and method for converting laser energy

Provided are an apparatus and a method for converting laser energy, characterized by employing an optical parametric oscillator for converting light of a green laser wavelength into light of a blue or red laser wavelength via a phase matching structure, by means of a non-linear optical crystal having a one-dimensional quasi-phase matching structure with a single grating period under appropriately-controlled temperature conditions. The non-linear optical crystal with the single grating period facilitates optical parametric oscillation and second harmonic generation to thereby enable green-to-blue wavelength conversion with a slope efficiency greater than 20%. Under 400 mW green light pump laser action, a periodically poled LiTaO 3 crystal with a crystal length of 15 mm and without a resistant reflective plating film on its end face is capable of outputting a blue light laser beam of 56 mW.

Second-harmonic generation nonliner frenquency converter

A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.

Resistive memory element

A resistive memory element includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on the tunneling structure. When a bias voltage higher than a reset voltage is applied to the P-type layer and the N-type layer, the resistive memory element is in a reset state. When the bias voltage lower than a set voltage is applied to the P-type layer and the N-type layer, the resistive memory element is in a set state.

非線性晶體及其非線性光學調變裝置

非線性晶體及其非線性光學調變裝置

本發明提供一種非線性光學調變裝置，其包含光源及非線性晶體。光源以第一方向射出第一光線，其中第一光線具有第一波長及第一半高寬。非線性晶體具有入光面及出光面並包含第一區域及第二區域。第一區域形成為週期性層狀結構，其中任相鄰兩層具有相反之極化方向並形成第一週期寬度。第二區域形成為週期性層狀結構，其中在部分之層狀結構中，任相鄰兩層具有相反之極化方向並形成第二週期寬度，且在其他部分之層狀結構中，任相鄰兩層具有相反之極化方向並形成第三週期寬度。

非線性晶體及其製作方法

Method of making transparent conductive oxide ohmic contact electrode on GaN

非線性晶體及其製作方法

一種非線性晶體製作方法包含下列步驟：提供晶體，其具有第一面與第二面，形成非連續性的第一金屬層於晶體之第二面，其中晶體具有內部電場及鐵電疇極化方向，內部電場之方向朝向第一面，且鐵電疇極化方向朝向第二面；加熱晶體，使得第一金屬層從第二面進入晶體，在晶體中形成複數個第一金屬擴散單元；以及施加第一外加電場於晶體，以改變非該等第一金屬擴散單元對應之垂直區域之鐵電疇極化方向朝向第一面，其中第一外加電場大於矯頑電場與內部電場之差值，且第一外加電場之方向朝向第一面，使得晶體具有非連續鐵電疇極化方向之週期性結構。

Substrate with lithium imide layer, LED with lithium imide layer and manufacturing method thereof

A substrate with a lithium imide layer, a LED with a lithium imide layer and a manufacturing method of the LED are provided. The substrate includes a lithium niobate layer and a lithium imide layer. The lithium imide layer is formed on a surface of the lithium niobate layer.

White LED chip and white LED packaging device

A white LED chip includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first material layer, the active layer includes a second material layer, and the second barrier layer includes a third material layer. The N-type layer is disposed over the tunneling structure. An energy gap of the second material layer is lower than an energy gap of the first material layer and an energy gap of the third material layer. Each of the first material layer, the second material layer and the third material layer is a metal oxide layer, a metal nitride layer or a metal oxynitride layer.

Memory cell with functions of storage element and selector

A single memory cell has the functions of a storage element and a selector. The memory cell includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on the tunneling structure. The tunneling structure is a stack structure including a first material layer, a second material layer and a third material layer. By adjusting a bias voltage that is applied to the P-type layer and the N-type layer, the tunneling structure is controlled to be in the amorphous state or the crystalline state. Consequently, the memory cell has the memorizing and storing functions. The memory cell has the P-type layer, the tunneling structure and the N-type layer. By adjusting the bias voltage, the function of the selector is achieved.

白光二極體

一種白光二極體，一P型層；一穿隧結構，覆蓋於該P型層上，該穿隧結構包括一第一能障層、一主動層、一第二能障層，其中該第一能障層包括一第一金屬氧化物層，該主動層包括一第二金屬氧化物層，該第二能障層包括一第三金屬氧化物層；一N型層，覆蓋於該穿隧結構上；一N型電極，接觸於該N型層；以及一P型電極，接觸於該P型層；其中，該第二金屬氧化物層的能隙低於該第一金屬氧化物層的能隙，且該第二金屬氧化物層的能隙低於該第一金屬氧化物層的能隙。