Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material

The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Thin films and methods of making them using cyclohexasilane

Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions. 1. A method for depositing a thin film , comprising:introducing a process gas comprising cyclohexasilane to a chamber, wherein said chamber contains a substrate;establishing cyclohexasilane chemical vapor deposition conditions in said chamber;initiating decomposition of said cyclohexasilane; anddepositing an epitaxial Si-containing film onto said substrate.2. The method of claim 1 , further comprising depositing an oxide layer directly onto said epitaxial Si-containing film.3. The method of claim 1 , wherein said process gas further comprises a dopant element selected from the group consisting of boron claim 1 , arsenic claim 1 , antimony claim 1 , indium claim 1 , and phosphorous.4. The method of claim 1 , wherein initiating decomposition of said cyclohexasilane occurs by heating said chamber to a temperature in the range of about 400° C. to about 750° C.5. The method of claim 1 , wherein initiating decomposition of said cyclohexasilane occurs prior to introducing said cyclohexasilane to said chamber.6. The method of claim 1 , wherein establishing cyclohexasilane deposition conditions comprises maintaining said chamber pressure between about 1 Torr and 100 Torr.7. The method of claim 1 , wherein said process gas further comprises a carrier gas.8. The method of claim 7 , wherein said carrier gas further ...

Thin films and methods of making them using cyclohexasilane

Thin films and methods of making them using cyclohexasilane

Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Thin films and methods of making them using cyclohexasilane

Selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing materials