УСОВЕРШЕНСТВОВАННЫЙ СОЛНЕЧНЫЙ ЭЛЕМЕНТ

... 1. Усовершенствованный солнечный элемент, состоящий из ряда полупроводниковых промежуточных слоев, проводящего верхнего слоя, или ячейки, и проводящего нижнего слоя, или ячейки, отличающийся тем, что полупроводниковые промежуточные слои выполнены из смеси кремния, ртути и азотнокислого серебра. 2. Усовершенствованная солнечная пластина по п.1, отличающаяся тем, что для промежуточных слоев использована смесь долей ртути, составляющей от 40 до 65%, долей азотнокислого серебра, составляющей от 8 до 20%, и долей кремния, составляющей от 15 до 30%.

Herstellungsverfahren einer Dünnschichtsonnenzelle.

METHODE ZUR HERSTELLUNG VON SOLARZELLEN.

Perowskithaltiger Verbundwerkstoff, Verfahren zu seiner Herstellung, elektronisches Bauelement und Modul

HERSTELLUNGSVERFAHREN EINES ZUSAMMENGESETZTEN HALBLEITERS.

Cpd. semiconductor material is prepd. by (a) electrodepositing a layer of a first constituent element on a substrate; (b) electrodepositing a layer of a second constituent element on the first layer; and (c) heating in a reactive atmos. contg. another constituent element of the semiconductor material to interdiffuse and chemically react the constituent elements, producing the semiconductor material.

Verfahren auf Oxyd-Basis zur Herstellung von dünnen Schichten von Verbindungshalbleitern und von entsprechenden elektronischen Vorrichtungen

Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung

Dünnfilmsolarzelle mit einer Diodenstruktur, wobei die Diodenstruktur umfasst: eine p-leitende Schicht (11) bestehend aus einer Chalkopyritverbindung und eine an die p-leitende Schicht (11) angrenzende n-leitende Schicht (10) bestehend aus einer Titan und Sauerstoff enthaltenen Verbindung, wobei die von der p-leitenden Schicht (11) abgewandte Seite der n-leitenden Schicht (10) an eine n-leitende Verstärkungsschicht (20) angrenzt, die einen größeren Bandabstand als die n-leitende Schicht (10) aufweist, und wobei die Titan und Sauerstoff enthaltende Verbindung eine Verbindung aus der Gruppe TiOx mit 1,5 < x < 2 ist.

Copper-indium based thin film photovoltaic devices and methods of making the same

A method of fabricating a copper-indium based thin film photovoltaic device comprises the steps of: (a) using electrodeposition, depositing a front window layer of a semiconductor material on a suitably configured electrically conductive substrate; (b) doping the window layer to obtain optimum electrical conductivity in the window layer; and following steps (a) and (b), (c) successively electrochemically depositing a plurality of adjacent copper-indium based semiconductor absorber layers on the window layer wherein each absorber layer has a different band gap energy value to an adjacent absorber layer. Thus a copper-indium based thin film photovoltaic device made according to this method comprises; an electrically conductive front substrate upon which is comprised an electrodeposited window layer of a doped semiconductor material; and having been successively deposited on top of said deposited window layer, a plurality of electrochemically deposited adjacent copper-indium based semiconductor ...

Diffusion barrier layer for thin film solar cell

A method of fabricating a solar cell e.g. CuZnSn(S,Se) (CZTSSe), that includes the following steps. A substrate is coated with a molybdenum (Mo) layer. A stress-relief layer is deposited on the Mo layer. The stress-relief layer is coated with a diffusion barrier. Absorber layer constituent components are deposited on the diffusion barrier, wherein the constituent components comprise one or more of sulfur (S) and selenium (Se). The constituent components are annealed to form an absorber layer, wherein the stress-relief layer relieves thermal stress imposed on the absorber layer, and wherein the diffusion barrier blocks diffusion of the one or more of S and Se into the Mo layer. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

Fabrication of semiconductor devices

METHODS AND APPARATUS FOR FORMING THIN-FILM HETEROJUNCTION SOLAR CELLS FROM 1-111-V1 CHALCOPYRITE COMPOUNDS AND SOLAR CELLS PRODUCED THEREBY

Method for the preparation of group IB-IIIa_VIA quaternary or higher alloy semiconductor films.

Group I-III-VI quaternary or higher alloy semiconductor films.

Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.

Group I-III-VI quaternary or higher alloy semiconductor films.

Group I-III-VI quaternary or higher alloy semiconductor films.

Method for the preparation of group IB-IIIa_VIA quaternary or higher alloy semiconductor films.

Method for the preparation of Group IB-IIIA-VIA Quaternary or higher alloy semiconductor films.

Group I-III-VI Quaternary or higher alloy semiconductor films.

Method for the preparation of group IB-IIIa_VIA quaternary or higher alloy semiconductor films.

Group I-III-VI quaternary or higher alloy semiconductor films.

PROCEDURE ON OXIDE BASIS FOR THE PRODUCTION OF THIN LAYERS OF COMPOUND SEMICONDUCTORS AND OF APPROPRIATE ELECTRONIC DEVICES

CONDUCTIVE ISO-STRUCTURAL CONNECTION

SEMICONDUCTOR RADIATION DETECTION ELEMENT

PHOTOACTIVE PYRITES LAYER, PROCEDURE FOR THEIR PRODUCTION AND USE OF SUCH ONES PYRITES LAYERS.

P-TYPE-SEMICONDUCTOR, PROCEDURE FOR ITS PRODUCTION, SEMICONDUCTOR ARRANGEMENT, PHOTOVOLTAI ELEMENT, AND PROCEDURE FOR THE PRODUCTION OF A SEMICONDUCTOR ARRANGEMENT

PRODUCTION OF CONNECTIONS ON BASIS OF CU-INSE PHASE EQUILIBRIA

SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, AS WELL AS PROCEDURE FOR ITS PRODUCTION

CIS BANDSOLARZELLE PROCEDURE AND DEVICE FOR YOUR PRODUCTION

ELECTRONIC SWITCH COMPRISING A PHOTOSENSITIVE SEMICONDUCTOR

Photovoltaic cell comprising a photovoltaic active semiconductor material

Method for forming solar cell materials from particulates

Photovoltaic thin-film solar modules and method for producing such thin-film solar modules

The invention relates to photovoltaic thin-film solar modules, comprising in a first embodiment, particularly in the following order: at least one substrate layer; at least one rear electrode layer, particularly directly contacting the substrate layer; at least one conductive barrier layer, particularly directly contacting the rear electrode layer and/or the substrate layer; at least one contact layer, particularly an ohmic contact layer, particularly directly contacting the barrier layer; at least one semiconductor absorber layer, particularly a chalcopyrite or kesterite semiconductor absorber layer, particularly directly contacting the contact layer; optionally at least one first buffer layer, particularly directly contacting the semiconductor absorber layer and containing or substantially made of CdS or a CdS-free layer, particularly containing or made substantially of Zn(S, OH) or In ...

Preparation of CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

Uncooled ybacuo thin film infrared detector

METHOD FOR PRODUCING A MONOCRYSTALLINE CU(IN,GA)SE<SB>2</SB> POWDER, AND MONOGRAIN MEMBRANE SOLAR CELL CONTAINING SAID POWDER

The invention relates to a method for producing a powder consisting of a Cu(In,Ga)Se2 compound, said method comprising the following steps: Cu and In and/or Cu and Ga are alloyed to form a CuIn and/or CuGa alloy with a substoichiometric part of Cu; a powder consisting of said CuIn and/or CuGa alloy is produced; Se and either KI or NaI are added to the powder; the mixture is heated until a melted mass is formed, in which the Cu(In,Ga)Se2 compound recrystallises, and the powder grains to be produced simultaneously grow; and the melted mass is cooled in order to interrupt the growth of the grains. The invention also relates to a monograin membrane solar cell containing a back contact, a monograin membrane, at least one semiconductor layer, and a front contact, said solar cell being characterised in that the monograin membrane contains a powder produced by the inventive method.

METHOD OF MANUFACTURING A PHOTOVOLTAIC FOIL

The invention pertains to a method of manufacturing a photovoltaic foil comprising a TCO layer, a photovoltaic layer, and a back electrode, which method comprises the following steps: providing a conductive temporary substrate; applying a TCO layer on the temporary substrate; applying a photovoltaic layer on the TCO by means of electrodeposition, with the current during the electrodeposition being supplied at least through the temporary substrate; applying a back electrode; if so desired, applying a permanent substrate; removing the temporary substrate. The crux of the invention is that the unit of the conductive temporary substrate and the TCO functions as electrode during the electrodeposition of the photovoltaic layer. Because of this, the rate of deposition of the photovoltaic layer can be increased compared with that of the prior art. Furthermore, a photovoltaic layer with a more homogenous layer thickness is obtained.

GROUP I-III-VI QUATERNARY OR HIGHER ALLOY SEMICONDUCTOR FILMS

This invention relates to group IB-IIIA.VIA quaternary or higher alloys. More particularly, this invention relations to group IB-IIIA-VIA quaternary or pentenary alloys which are suitable for use as semiconductor films. More specifically, the invention relates to quaternary or pentenary alloys which are substantially homogeneous and are characterized by an x-ray diffraction pattern (XRD) having a main [112] peak at a 2.theta. angle (2.theta. (112)) of from 26~ to 28~ for Cu radiation at 40kV, wherein a glancing incidence x-ray diffraction pattern (GIXRD) for a glancing angle of from 0.2~ to 10~ reflects an absolute shift in the 2.theta.(112) angle of less than 0.06~.

PHOTOVOLTAIC CELL COMPRISING A PHOTOVOLTAICALLY ACTIVE SEMICONDUCTOR MATERIAL

... ²²`The invention relates to a photovoltaic cell comprising a photovoltaically ²active ²semiconductor material, wherein the photovoltaically active semiconductor ²material is a p-²or n-doped semiconductor material comprising a binary compound of the formula ²(I) or a ²ternary compound of the formula (II):²² ZnTe (I) ²Zn 1-x Mn x Te (II) ²where x is from 0.01 to 0.99,²²and a particular proportion of tellurium ions in the photovoltaically active ²semiconductor ²material has been replaced by halogen ions and nitrogen ions and the halogen ²ions are ²selected from the group consisting of fluoride, chloride and bromide and ²mixtures thereof.² ...

METHODS OF MAKING CONTROLLED SEGREGATED PHASE DOMAIN STRUCTURES

A method includes providing a first precursor on a first substrate; providing a second precursor on a second substrate; contacting the first precursor and the second precursor; reacting the first precursor and the second precursor to form a chemical reaction product; and moving the first substrate and the second substrate relative to one another to separate the chemical reaction product from at least one member selected from the group consisting of the first substrate and the second substrate, characterized in that, to control formation of a segregated phase domain structure within the chemical reaction product, a constituent of at least one member selected from the group consisting of the first precursor and the second precursor is provided in a quantity that substantially regularly periodically varies from a mean quantity with regard to basal spatial location.

SELENIDE POWDERS, AND MANUFACTURING PROCESS

This invention relates to selenide powders for use in dispersions, pastes or inks suitable for the manufacture of photovoltaic cells such as CIGS or CIGSS based solar cells. A synthesis process is proposed for the manufacture of submicron or nanoparticulate powder comprising selenides of a metal or a metal mixture, comprising the steps of: - selecting an oxygen-bearing precursor of said metal or metal mixture; - mixing said oxygen-bearing precursor with an at least stoichiometric amount of selenium; and, - reducing the mixture with H2 at a temperature sufficient to ensure the reaction with the oxygen of the precursor, and the formation of selenides. The powders can be deposited on a substrate and annealed without the need for a separate selenization step. The use of H2Se as a Se source, which is a most toxic gas, is thus avoided.

HEAT TREATMENT BY INJECTION OF A HEAT-TRANSFER GAS

La présente invention concerne le traitement thermique d'un précurseur réagissant avec la température, et comportant en particulier les étapes : préchauffer ou refroidir un gaz caloporteur à une température contrôlée, et injecter le gaz préchauffé ou refroidi sur le précurseur. Avantageusement, outre la température du gaz caloporteur (To), on contrôle aussi le débit du gaz (D) à l'injection sur le précurseur, ainsi qu'une distance (x) entre le précurseur et une sortie (5) d'injection du gaz sur le précurseur, pour contrôler finement la température du précurseur recevant le gaz injecté.

A RADIATION DETECTION SYSTEM AND PROCESSES FOR PREPARING THE SAME

The invention provides a radiation detection system, comprising a continuous film of a wide band gap semiconductor, radiation-detecting, polycrystalline material formed from a multiplicity of crystalline grains, wherein the grains are sintered together to form a single, coherent, continuous film.

A RADIATION DETECTION SYSTEM AND PROCESSES FOR PREPARING THE SAME

The invention provides a radiation detection system, comprising a continuous film of a wide band gap semiconductor, radiation-detecting, polycrystalline material formed from a multiplicity of crystalline grains, wherein the grains are sintered together to form a single, coherent, continuous film.

HETEROJUNCTION ENERGY GRADIENT STRUCTURE

METHOD OF FABRICATING FILM FOR SOLAR CELLS

A method of fabricating Cu.alpha.(In x Ga1-x).beta.(Se y Si-y)Y films for solar cells includes forming an electrode on a substrate and supplying the substrate and electrode with Cu, In, Ga, Se, and S to form a Cu.alpha.(In x Ga1-x).beta.(Se y Si-y)Y film. Simultaneously with the supplying of Cu, In, Ga, Se and S, the substrate is supplied with water vapor or a gas that contains a hydroxyl group.

Procédé pour former une pellicule photoconductrice et semi-conductrice disposée sur une sous-couche non conductrice et pellicule obtenue par le procédé

DEVICE HAS TRANSPARENT THIN PHOTOCONDUCTIVE, USE THE DEVICE TO CONSTRUCT A MEMORY, AND METHOD OF MANUFACTURING THE DEVICE.

PROCEDURE FOR THE PRODUCTION OF CRYSTALLINE PHOSPHORUS AND PRODUCT.

STABLE ONE, PHOSPHORUS ABSTENTION SOLID DEPOSITS, PROCEDURES FOR THEIR PRODUCTION AS WELL AS USES OF THE DEPOSITS MENTIONED.

PROCEDURE FOR THE PRODUCTION A HIGH OF A PHOSPHORHALTIGEN COATING, APPARATUS FOR THE EXECUTION OF THE COATING AND USE THE SAME.

A method for producing a compound chalcopyrite in thin layer.

A process for depositing a precursor of the compound (2) [...].

ПОЛУПРОВОДНИКОВЫЕ ПЛЕНКИ ИЗ ЧЕТЫРЕХ И БОЛЕЕ КОМПОНЕНТНЫХ СПЛАВОВ ЭЛЕМЕНТОВ ГРУПП I-III-VI

Это изобретение относится к четырех- или более компонентным сплавам элементов из групп IB-IIIA-VIA. Более конкретно, это изобретение относится к четверным или пятеричным сплавам, которые подходят для применения в качестве полупроводниковых пленок. Более конкретно, это изобретение относится к четверным или пятеричным сплавам, которые являются, в основном, гомогенными и отличаются тем, что в дифрактограмме рентгеновских лучей (XRD) имеется основной [112] пик со значением угла 2θ (2θ[112]) от 26 до 28° для медного излучения при 40 кВ, при этом в дифрактограмме рентгеновской спектроскопии под малым углом измерения (GIXRD) при значении скользящего угла от 0,2 до 10° наблюдается абсолютное смещение угла 2θ[112] меньше чем на 0,06°.

A multi-band optical response device based on molybdenum oxide microstrip/p-type Si and a preparation method thereof

ZnGaO Ultraviolet detector and preparation method thereof

Amorphous boron carbon alloy and photovoltaic application thereof

The present invention discloses produce and application of hydrogenation amorphous boron carbon (a-CB) film. Amorphous boron carbon alloy can be formed at low temperature by plasma enhanced chemical vapor deposition method. The p type semiconductor film can be used to single junction and multi-junction photovoltaic devices and improves the capability of single junction and multi-junction photovoltaic devices.

Preparation method and application of two-dimensional lead telluride nano sheet and nano material

Amorphous (GaLu) based alloys

Double-layer WS

Metal substrate's CIGS thin -film photovoltaic cell's building photovoltaic light and heat integration component

Photovoltaic device with metal sulfide oxide window layer

Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS1-xOx window layer formed over the substrate structure, wherein M is an element from the group consisting of Zn, Sn, and In. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a MS1-xOx window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In.

Method for preparing copper zinc tin sulfide optoelectronic film

The invention relates to a method for preparing a copper zinc tin sulfide film and belongs to the technical field of optoelectronic film preparation. The method is realized through the following steps that firstly, a substrate is cleaned, then, ZnCl2.2H2O, ZnCl2.2H2O and SnCl2.2H2O are put into a solvent, a precursor film is obtained on the substrate by a spin-coating method, the precursor film is dried and is put into a sealed container with hydrazine hydrate and sublimed sulfur so that a hydrazine hydrate sample is not in contact with hydrazine and sublimed sulfur, finally, the drying is carried out, and a copper zinc tin sulfide film is obtained. The method has the advantages that high-temperature and high-vacuum conditions are not needed, the requirements on instrument equipment are low, the production cost is low, the production efficiency is high, and the operation is easy. The obtained copper zinc tin sulfide optoelectronic film has better continuity and uniformity, the ingredient ...

MnPSPSE based on phosphorus selenium

Lead-free perovskite solar cell

Thin-film solar cell module and preparation method thereof

Ultra-thin sulfide hafnium phototransistor with top gate structure and preparation method of ultra-thin sulfide hafnium phototransistor

Method for preparing copper-aluminum-sulfur film

The invention relates to a method for preparing a copper-aluminum-sulfur film, and belongs to the technical field of preparation of photoelectric films. The method comprises the following steps of: firstly cleaning a glass substrate; then placing CuCl2.2H2O, Al(NO3)3.9H2O and CH4N2S into a solvent, and applying a spincoating method to obtain a precursor film on the glass substrate; drying the precursor, and placing the precursor into a closable container filled with hydrazine hydrate, wherein a precursor film sample is not contacted with the hydrazine hydrate; heating the closable container, then taking out a sample, and drying the sample to obtain the copper-aluminum-sulfur photoelectric film. The method disclosed by the invention has the advantages of no need of high-temperature vacuum condition, low requirement on equipment and instruments, easiness for operation, low production cost, high production efficiency, and the like. The obtained copper-aluminum-sulfur photoelectric film has ...

Wurtzite structure cu

Thin film photovoltaic cell

Tunneling type photoelectric detector based on three-dimensional Dirac material and preparation method thereof

Growth method for preparing indium-gallium-oxygen nanowire semiconductor based on antimonide material

The invention provides a growth method for preparing an indium-gallium-oxide nanowire semiconductor based on an antimonide material, belongs to the technical field of semiconductor preparation, particularly adopts a preparation scheme of an indium-gallium-oxide (InGaO3) nanowire, and particularly relates to a preparation method for growing the indium-gallium-oxide (InGaO3) nanowire in one step in a low-temperature and low-pressure environment based on the antimonide material. According to the indium gallium oxide (InGaO3) nanowire semiconductor prepared by the method, the prepared indium gallium oxide (InGaO3) nanowire photoelectric detector is of a metal-semiconductor-metal (M-S-M) structure, and the detection efficiency is improved on the premise of ensuring high-quality crystallinity.

Device photodetector having a transparent electrode of low electrical resistance

Dispositif photoconducteur comprenant un substrat (10) en un matériau doué de propriétés conductrices, une couche active (20) d'un matériau doué de propriétés photoconductrices déposée sur une première face (11) dudit substrat (10), une couche collectrice transparente (30) d'un deuxième matériau doué de propriétés conductrices déposée sur ladite couche active (20), et des moyens (13, 31) de contact électrique disposés respectivement sur une deuxième face (12) du substrat et sur ladite couche collectrice (30). Selon l'invention, le deuxième matériau doué de propriétés conductrices est un oxyde de cuivre à valence mixte de formule générale (ACuO3 - x )m (A'O)n . Application à la photodétection du rayonnement ultraviolet, visible ou proche infrarouge.

Manufacture of a solar cell from semi-conductive molybdenum silicide (MoSi2) with 63% of Mo and 37% of Si2

SOLUTION OF TUNGSTATE IONS AND HYBRID PHOTOVOLTAIC DEVICE

L'invention concerne une solution d'ions tungstates W6+ (VI) comprenant à titre de solvant au moins un polyalcool, éventuellement partiellement éthérifié, un procédé de préparation et ses utilisations. L'invention concerne encore une couche comprenant au moins un oxyde de tungstène WOz comprenant un ou plusieurs complexes polyoxotungstates, ses procédés de préparation, ses utilisations, et en particulier un dispositif photovoltaïque comprenant une telle couche de matériau.

단분자 첨가제가 결합된 페로브스카이트 복합체 및 그의 제조방법, 및 그를 포함하는 페로브스카이트 태양전지

... 본 발명은 페로브스카이트 결정; 및 단분자 첨가제;를 포함하고, 상기 단분자 첨가제는 상기 페로브스카이트의 결정립계면(grain boundary)에 위치하고, 상기 단분자 첨가제와 페로브스카이트가 결합된 것인 페로브스카이트 복합체에 관한 것으로, 단분자 첨가제인 플러렌 유도체 화합물을 첨가하여 페로브스카이트 복합체를 제조함으로써, 열에너지에 의해 결정 격자를 벗어나기 쉬운 할로겐 원자들을 페로브스카이트 결정 테두리에 위치한 플러렌 유도체 화합물이 결정격자를 빠져나가지 못하게 하여 결정의 열 내구성을 향상시킬 수 있다. 또한, 상기 페로브스카이트 복합체를 태양전지에 적용하여 태양전지의 열적 안정성 및 광전기적 효율을 향상시키는 효과가 있다.

BIO-PHOTOVOLTAIC DEVICE INCLUDING MICROALGAE CELL-METAL OXIDE NANOPARTCLE COMPLEX AND PERMANENT MAGNET

The present invention relates to a bio-photovoltaic device including: a complex including a microalgae cell and a metal oxide nanoparticle; an anode; an air-cathode; and a permanent magnet. Accordingly, the present invention can generate remarkably high bioelectrochemical energy. COPYRIGHT KIPO 2018 (A1,A2) Outlet (B1,B2) Inlet (C1,C2) Anode (D1,D2) Air-cathode (EE) Permanent magnet (FF) Light source ...

Nano particles, thin films containing the same and solar cells containing the same

PEROVSKITE SOLAR CELL WITH EXCELLENT PHOTO-STABILITY AND MANUFACTURING METHOD THEREOF

The present invention relates to a method for manufacturing a perovskite solar cell with excellent initial photoelectric conversion efficiency and photo-stability and a perovskite solar cell manufactured thereby and, more particularly, to a method for manufacturing a perovskite solar cell which includes the steps of: performing thermal treatment by applying an Sn(II) compound solution on an electron transport layer; and forming a perovskite layer. COPYRIGHT KIPO 2018 (AA) Prepare a first electrode (BB) Form an electron transport layer (CC) Apply a Sn(II) compound (DD) Heat treatment (EE) Remove unoxidized Sn (II) compounds (FF) Form a perovskite layer (GG) Form of a hole transport layer (HH) Formation of a second electrode ...

METHOD FOR PRODUCING A THIN-FILM CHALCOPYRITE COMPOUND

나트륨-인듐 술피드 버퍼 층을 갖는 박층 태양 전지용 층 시스템

... 본 발명은 빛을 흡수하기 위한 흡수제 층, 및 흡수제 층 상의 버퍼 층을 포함하며, 상기 버퍼 층은 NaxIny-x/3S (여기서, 0.063 ≤ x ≤ 0.625 및 0.681 ≤ y ≤ 1.50)를 함유하는 것인 박층 태양 전지용 층 시스템에 관한 것이다.

박막 태양 전지를 위한 층 시스템

... 본 발명은, 칼코게나이드 반도체를 함유하는 흡수체 층(4) 및 흡수체 층(4) 상에 배치되고 2/3≤x/y≤1인 할로겐-풍부 InxSy를 포함하는 버퍼 층(5)을 포함하는, 박막 태양 전지(100) 및 태양 전지판을 위한 층 시스템(1)에 관한 것이다. 버퍼 층(5)은 흡수체 층(4)에 인접하고 할로겐 몰 분율 A1를 함유하는 제1 층 대역(5.1) 및 제1 층 대역(5.1)에 인접하고 할로겐 몰 분율 A2를 함유하는 제2 층 대역(5.2)으로 이루어진다. A1/A2의 비는 ≥2이고 제1 층 대역(5.1)의 층 두께(d1)는 버퍼 층(5)의 층 두께(d)의 ≤50%이다.

METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS

ENERGY CONVERSION MATERIAL

The present invention relates to an energy conversion material. The energy conversion material comprises: a pair of two-dimensional active layers; and a physical property control layer disposed between the two-dimensional active layers, wherein the physical property control layer converts at least one of a structure and a state according to external environmental factors to perform reversible conversion between the two-dimensional active layers, thereby increasing energy yields due to environmental changes. COPYRIGHT KIPO 2019 (AA) Light (BB) Darkroom (CC) Piezoelectric conversion mode (DD) Photoelectric conversion mode ...

Metal chacogenide film and method and device for manufacturing the same

FABRICATION METHOD OF PEROVSKITE SOLAR CELL ABSORBING LAYER BY CHEMICAL VAPOR DEPOSITION

Solar cell and method for manufacturing the same

FLEXIBLE SOLAR SELL MODULE AND METHOD OF THE SAME

SOLAR CELL AND MANUFACTURING METHOD THEREOF

태양 전지 및 이의 제조 방법

... 본 발명의 실시예에 따른 태양 전지는, 반도체 기판과, 반도체층으로 구성된 제1 도전형 영역과, 반도체 기판의 일부를 구성하는 도핑 영역으로 구성된 제2 도전형 영역과, 제1 및 제2 도전형 영역에 각기 전기적으로 연결되는 제1 및 제2 전극을 포함하고, 제1 또는 제2 도전형 영역 위에 위치하는 패시베이션층이 알루미늄 산화물층을 포함하며, 패시베이션층을 관통하는 개구부가 전극에 국부적으로 대응하는 복수의 관통홀을 포함한다.

박막 태양전지 광흡수층의 제조 방법

... 본 발명의 다양한 실시예에 따른 박막 태양전지 광흡수층의 제조 방법은, 후면 전극 상에 공극형성방지막을 형성하는 단계; 상기 공극형성방지막 상에 Zn 전구체, Cu 전구체 및 Sn 전구체를 적층하여 광흡수층의 금속 전구체를 형성하는 단계; 및 상기 공극형성방지막 및 금속 전구체를 열처리 하는 단계를 포함할 수 있다.

method for the preparation of quaternary alloy semiconductor [...] or upper group IB it enox it route

APERFEICOAMENTO EM PILHA FOTOVOLTAICA

METHOD FOR PRODUCTION OF A PELLET FOR A DIRECT-CONVERSION DETECTOR OF X-RAYS, DIRECT-CONVERSION DETECTOR OF X-RAYS AND DENTAL RADIOLOGY APPARATUS USING SUCH A DETECTOR

The present invention relates to a method for production of a pellet for a direct-conversion detector of X-rays. It also relates to a direct-conversion detector of X-rays using such a pellet and to a dental radiology apparatus using at least one such detector. The method for production of the pellet comprises a step of placing a powder of a semi-conductive polycrystalline material under a load (3, 4, 4a) and a step of heating (5-9) for a predetermined period of time. It comprises a prior step for bringing about an impurity level of at least 0.2% in the semi-conductive polycrystalline material.

ENHANCED PEROVSKITE MATERIALS FOR PHOTOVOLTAIC DEVICES

A perovskite material that has a perovskite crystal lattice having a formula of CxMyXz, where x, y, and z, are real numbers, and 1, 4-diammonium butane cation cations disposed within or at a surface of the perovskite crystal lattice. C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine. M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X comprises one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.

BACK ELECTRODE CONFIGURATION FOR ELECTROPLATED CIGS PHOTOVOLTAIC DEVICES AND METHODS OF MAKING SAME

A back contact configuration for a CIGS-type photovoltaic device is provided. The back contact configuration includes an interfacial seed layer, made up of one or more layers/sublayers, disposed between a Mo based rear contact/electrode and a CIGS inclusive semiconductor absorber. The interfacial seed layer may be of or include one or more element(s) that make up, or help make up, the CIGS inclusive semiconductor absorber. Various methods and compositions of the interfacial seed layer are disclosed, including a seed layer comprising metallic and/or substantially metallic Cu-In-Ga, CIGS, and/or a stack of alternating layers of or including Cu, In and Ga. Methods for making the back contact configuration, including an interfacial seed layer, are also provided.

PROCESS OF MAKING A THIN-FILM PHOTOVOLTAIC DEVICE AND THIN-FILM PHOTOVOLTAIC DEVICE

A thin-film photovoltaic device and a process of making such a device, the device comprising a first layer of a chalkopyrite semiconductor of a first doping type; a second layer of intrinsic zinc oxide deposited by chemical vapour deposition; a third layer of zinc oxide semiconductor of a second doping type opposite to the first doping type and deposited by a method other than chemical vapour deposition; and wherein the second layer is arranged between the first and third layers.

PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL

One embodiment of the present invention provides a photoelectric conversion element which is provided with a light-transmitting first electrode, a second electrode and a light absorption layer. The light absorption layer is provided between the first electrode and the second electrode. The light absorption layer contains a compound semiconductor which contains a first element that is a group 11 element and a second element that is a group 16 element, said compound semiconductor having a chalcopyrite structure or a stannite structure. The light absorption layer contains a p-type part and an n-type part. The n-type part is provided between the p-type part and the first electrode. The n-type part forms a homojunction with the p-type part. The n-type part contains a dopant. The dopant is an element that has a formal charge (Vb) of from 1.60 to 2.83 (inclusive) as determined by Bond Valence Sum calculations.

CIGS Solar Cell and Method for Manufacturing thereof

A CIGS solar cell includes a glass substrate, a light absorbing surface and a photoelectric transducer structure. The glass substrate includes a plurality of arrayed protrusions. The arrayed protrusions protrude from at least one surface of the glass substrate, wherein the depth from the top of the arrayed protrusions to the bottom of the arrayed protrusions is predetermined. The light absorbing surface is located on the top of the arrayed protrusions, the side of the arrayed protrusions and the surface of the glass substrate between the arrayed protrusions. The photoelectric transducer structure includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer.

Buffer layer formation

Manufacturing a photovoltaic device can include a vapor transport deposition process.

Buffer layer deposition for thin-film solar cells

Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements.

Solution-processed inorganic photo-voltaic devices and methods of production

Methods of producing photo-voltaic devices include spray coating deposition of metal chalcogenides, contact lithographic methods and/or metal ion injection. Photo-voltaic devices include devices made by the methods, tandem photo-voltaic devices and bulk junction photovoltaic devices.

Alternating Bias Hot Carrier Solar Cells

Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

Gas injection device and solar cell manufacturing method using the same

A solar cell manufacturing method includes forming a first electrode on a substrate, forming a mixed metal layer on the first electrode, forming a light absorbing layer by injecting hydrogen selenide on the entire surface of the mixed metal layer using a gas injection device, and forming a second electrode on the light absorbing layer. Further, the gas injection device includes a gas pipeline, an inner gas pipe positioned in the gas pipeline and having an opening, and a plurality of injection nozzles disposed below the gas pipeline.

Selenization of precursor layer containing culns2 nanoparticles

A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS 2 , CuIn(S y ,Se 1−y ) 2 , CuGaS 2 , CuGa(S y ,Se 1−y ) 2 , Cu(In x Ga 1−x )S 2 , and Cu(In x Ga 1−x )(S y ,Se 1−y ) 2 nanoparticles and combinations thereof, wherein 0≦x≦1 and 1≦y≦0.

System and Method for Transferring Substrates in Large Scale Processing of CIGS and/or CIS Devices

The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to at least initiate formation of a copper indium diselenide film on each of the substrates.

Composite material comprising nanoparticles and production of photoactive layers containing quaternary, pentanary and higher-order composite semiconductor nanoparticles

A composite material includes at least two components, wherein at least one component is present in the form of nanoparticles, which consist of at least three metals and at least one non-metal and the diameter of which is less than one micrometre, preferably less than 200 nm. The novel composite material is particularly well suited for the production of photoactive layers.

Thin-film solar cell and manufacturing method thereof

A thin-film solar cell and a manufacturing method thereof are disclosed. The method of manufacturing the thin-film solar cell includes the steps of providing a substrate; forming a diffusion barrier layer on the substrate; forming a back electrode layer on the diffusion barrier layer; forming a precursor layer on the back electrode layer, and the precursor layer including at least Cu, In and Ga; providing an alkali layer on an upper surface of the precursor layer, and the alkali layer being formed of Li, Na, K, Rb, Cs, or an alkali metal compound; providing a selenization process for the precursor layer and the alkali layer to form an absorber layer, such that an atomic percentage concentration of the alkali metal in the absorber layer is ranged between 0.01%˜10%; forming at least a buffer layer on the absorber layer; and forming at least a front electrode layer on the buffer layer.

SYNTHESIS OF MULTINARY CHALCOGENIDE NANOPARTICLES COMPRISING Cu, Zn, Sn, S, AND Se

Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.

Methods of manufacturing solar cell

Provided is a method of manufacturing a solar cell. The method includes: preparing a substrate with a rear electrode; and forming a copper indium gallium selenide (CIGS) based light absorbing layer on the rear electrode at a substrate temperature of room temperature to about 350° C., wherein the forming of the CIGS based light absorbing layer includes projecting an electron beam on the CIGS based light absorbing layer.

Sputtering target and method for producing the same

[Problems] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means for Solving the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga and 0.05 to 1 at % of Na are contained as metal components except fluorine (F) of the sputtering target, a remaining portion has a component composition consisting of Cu and unavoidable impurities, and Na is contained in the state of a NaF compound. Also, a method for producing the sputtering target includes the steps of forming a molded article consisting of a mixed powder of NaF powder and Cu—Ga powder or a mixed powder of NaF powder, Cu—Ga powder, and Cu powder; and sintering the molded article in a vacuum atmosphere, an inert gas atmosphere, or a reducing atmosphere.

Continuous Electroplating Apparatus with Assembled Modular Sections for Fabrications of Thin Film Solar Cells

An electroplating production line or apparatus that can be assembled with modular plating sections in a roll-to-roll or reel-to-reel continuous plating process is provided. The length of the plating cell for a modular plating section can be readily changed to fit different current densities required in a roll-to-roll or reel-to-reel process. In addition, the electrolyte solution tanks can be simply connected or disconnected from the modular plating sections and moved around. With these designs, a multiple layers of coating with different metals, semiconductors or their alloys can be electrodeposited on this production line or apparatus with a flexibility to easily change the plating orders of different materials. This apparatus is particularly useful in manufacturing Group IB-IIIA-VIA and Group IIB-VIA thin film solar cells such as CIGS and CdTe solar cells on flexible conductive substrates through a continuous roll-to-roll or reel-to-reel process.

Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same

In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

Method and Device for Cadmium-Free Solar Cells

A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a thin film photovoltaic absorber which has a surface including copper, indium, gallium, selenium, and sulfur. The method further includes subjecting the surface to a material containing at least a zinc species substantially free of any cadmium. The surface is heated to cause formation of a zinc doped material. The zinc doped material is free from cadmium. Furthermore the method includes forming a zinc oxide material overlying the zinc doped material and forming a transparent conductive material overlying the zinc oxide material.

Substrate processing apparatus, method for manufacturing solar battery, and method for manufacturing substrate

There is provide a substrate processing apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas into the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a base of the reaction tube is made of a metal material.

Electroplating method for depositing continuous thin layers of indium or gallium rich materials

An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

HYDRAZINE-COORDINATED Cu CHALCOGENIDE COMPLEX AND METHOD OF PRODUCING THE SAME

A hydrazine-coordinated Cu chalcogenide complex obtainable by reacting Cu or Cu 2 Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration; and a method of producing a hydrazine-coordinated Cu chalcogenide complex, including reacting Cu or Cu 2 Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration.

Apparatus for forming copper indium gallium chalcogenide layers

A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.

New compound semiconductors and their application

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In x Co 4 Sb 12-n-z Q′ n Se z , where Q′ is at least one selected from the group consisting of O and S, 0<x≦0.5, 0<n≦2 and 0≦z<2.

Processes for photovoltaic absorbers with compositional gradients

Processes for making a photovoltaic absorber by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to make a photovoltaic absorber having a concentration gradient of various atoms. CIGS thin film solar cells can be made.

Method for manufacturing light-absorption layer for solar cell, method for manufacturing thin film solar cell using the same, and thin film solar cell using the same

Disclosed are a method of manufacturing a light-absorption layer for a solar cell, a method manufacturing a thin film solar cell using the same, and a thin film solar cell fabricated using the same. The method of manufacturing a light-absorption layer for a solar cell includes: preparing an ink composition including at least one metal precursor including at least one chalcogen element and a solvent; applying the ink composition as a precursor phase on a substrate using a solution process; and photo-sintering the ink composition applied on the substrate as a precursor phase.

Laser annealing for thin film solar cells

A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

Thin-film solar cell manufacturing system

A manufacturing system for thin-film solar cell is disclosed in the present invention. The manufacturing system includes a chamber, a boat disposed inside the chamber, a solid substrate with a first precursor which has a first I B group and III A group, and a flexible substrate with a second precursor which has a second I B group and III A group, a gas controller for pouring reactant gas, and a heater for increasing the temperature of the chamber, so that the reactant gas reacts to the first precursor and the second precursor to form a chalcopyrite structure.

Method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer

A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.

Thin film solar cell

Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate ( 1 ), a backside surface electrode layer ( 2 ) formed on the substrate ( 1 ), a p-type light-absorbing layer ( 3 ) formed on the backside surface electrode layer ( 2 ), and an n-type transparent conductive film ( 5 ) formed on the p-type light-absorbing layer ( 3 ). Voids ( 6 ) are formed at the interface of the backside surface electrode layer ( 2 ) and the p-type light-absorbing layer ( 3 ).

SILICON MULTILAYER ANTI-REFLECTIVE FILM WITH GRADUALLY VARYING REFRACTIVE INDEX AND MANUFACTURING METHOD THEREFOR, AND SOLAR CELL HAVING SAME AND MANUFACTURING METHOD THEREFOR

The present invention relates to a silicon multilayer anti-reflective film with a gradually varying refractive index and a manufacturing method therefor, and a solar cell having the same and a manufacturing method therefor, wherein: the refractive index of a silicon thin film is adjusted by depositing silicon on a semiconductor or glass substrate with a slight tilt; and an anti-reflective film with a gradually varying refractive index is implemented using a silicon multi-layer film in which multi-layer film are stacked with different tilt angles. In addition, the silicon multilayer anti-reflective film according to the present invention is applied to a silicon solar cell, thereby suppressing reflection in the inside of the solar cell and providing an excellent heat radiation characteristic using a high heat transfer coefficient. 1. A silicon multilayer anti-reflection film comprising at least two silicon layers sequentially stacked on a substrate , wherein each silicon layer is obliquely deposited on the substrate by adjusting a tilting angle of the substrate to gradually vary an index of refraction.2. The silicon multilayer anti-reflection film according to claim 1 , wherein the substrate comprises a glass substrate or a semiconductor substrate claim 1 , and the semiconductor substrate comprises one of Si claim 1 , GaAs claim 1 , InP claim 1 , GaP claim 1 , and GaN.3. The silicon multilayer anti-reflection film according to claim 1 , wherein the silicon layer has a gradually increasing or decreasing index of refraction.4. The silicon multilayer anti-reflection film according to claim 1 , wherein the tilting angle ranges from 1 to 90 degrees.5. The silicon multilayer anti-reflection film according to claim 1 , wherein the gradually varying index of refraction is realized through a stepped configuration claim 1 , and the distribution of the gradually varying index of refraction comprises one of linear claim 1 , polynomial claim 1 , Gaussian and nonlinear ...

SEMICONDUCTOR FERROELECTRIC COMPOSITIONS AND THEIR USE IN PHOTOVOLTAIC DEVICES

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation. 1. A ferroelectric perovskite characterized as having a band gap , E , of less than 2.5 eV.2. The ferroelectric perovskite of wherein the band gap is less than about 2.0 eV.3. The ferroelectric perovskite of wherein the band gap is in the range of from about 1.1 eV to about 1.6 eV.4. The ferroelectric perovskite of claim 1 , wherein the ferroelectric perovskite comprises a solid solution of KNbOand BaNiNbO claim 1 , wherein δ is in the range of from 0 to about 1.5. The ferroelectric perovskite of claim 4 , wherein the solid solution of KNbOand BaNiNbOis represented as (1−x)KNbOBaNiNbO claim 4 , wherein x is in the range of from about 0.01 to about 0.99.6. The ferroelectric perovskite of claim 5 , wherein x is in the range of from about 0.1 to about 0.5.7. The ferroelectric perovskite of claim 4 , wherein δ is in the range of from about 0.2 to about 0.3.8. The ferroelectric perovskite of claim 1 , wherein the ferroelectric perovskite is ferroelectric up to at least 100 degrees C.9. A photovoltaic device comprising the ferroelectric perovskite of .10. A compound comprising a solid solution of KNbOand BaNiNbO claim 1 , wherein δ is in the range of from 0 to about 1.11. The ...

Photoelectric conversion device, method of manufacturing photoelectric conversion device, and photoelectric conversion module

It is an object of the present invention to provide a photoelectric conversion device and a photoelectric conversion module with enhanced conversion efficiency. The photoelectric conversion device comprises: a light-absorbing layer containing a compound semiconductor capable of photoelectric conversion; and a semiconductor layer provided on one side of the light-absorbing layer and containing sulfur, wherein more sulfur is present in part of the semiconductor layer on the aforementioned light-absorbing layer side than in part thereof on the opposite side from the aforementioned light-absorbing layer.

Layer-by-layer nanoassembled nanoparticles based thin films for solar cell and other applications

A solar cell. The solar cell includes a substrate, a first layer comprising a first copper-based material deposited upon the substrate, the first copper-based material electrically attracted to the substrate or to a first optional deposit layer deposited between the substrate and the first layer, and a second layer comprising a second copper-based material deposited upon the first layer or an second optional deposit layer deposited between the first layer and the second layer, the second copper-based material electrically attracted to the first layer or to the second optional deposit layer, wherein the first copper-based material and the second copper-based material are selected from the group consisting of copper indium gallium (di)selenide (CIGS), copper indium selenium (CIS), and cadmium sulfate (CdS).

NANOCRYSTALLINE COPPER INDIUM DISELENIDE (CIS) AND INK-BASED ALLOYS ABSORBER LAYERS FOR SOLAR CELLS

Embodiments of the invention are to a copper indium diselenide (CIS) comprising nanoparticle where the nanoparticle includes a CIS phase and a second phase comprising a copper selenide. The CIS comprising nanoparticles are free of surfactants or binding agents, display a narrow size distribution and are 30 to 500 nm in cross section. In an embodiment of the invention, the CIS comprising nanoparticles are combined with a solvent to form an ink. In another embodiment of the invention, the ink can be used for screen or ink-jet printing a precursor layer that can be annealed to a CIS comprising absorber layer for a photovoltaic device. 1. A CIS comprising nanoparticle comprising:Cu, where optionally Cu includes some Au, Ag or both;In, Al, Zn, Sn, Ga, or any combination thereof; andSe, S, Te or any combination thereof, wherein the nanoparticle further comprises a secondary phase that comprises a compound that decomposes to a liquid, is free of a surfactant or binding agent.2. The CIS comprising nanoparticle of claim 1 , wherein the CIS comprising nanoparticle comprises Cu claim 1 , In claim 1 , and Se with a secondary phase comprising CuSe claim 1 , CuSe claim 1 , CuSe claim 1 , or any combination thereof.3. The CIS comprising nanoparticle of claim 2 , wherein the CuSe is α-CuSe claim 2 , β-CuSe claim 2 , or γ-CuSe.4. The CIS comprising nanoparticle of claim 1 , wherein the CIS comprising nanoparticle has a cubic (spharelite) or tetragonal (chalcopyrite) CIS crystal lattice.5. The CIS comprising nanoparticle of claim 4 , wherein the CIS crystal lattice comprises Cu claim 4 , In claim 4 , and Se where a portion of its In is substituted with Al claim 4 , Zn claim 4 , Sn claim 4 , Ga claim 4 , or any combination thereof claim 4 , and/or Cu is substituted with Au claim 4 , Ag claim 4 , or any combination thereof in the cation lattice.6. The CIS comprising nanoparticle of claim 4 , wherein the CIS crystal lattice comprises Cu claim 4 , In claim 4 , and Se where a portion of ...

SOLID-STATE IMAGING DEVICE AND FABRICATION METHOD THEREOF

A fabrication method for solid-state imaging devices includes having circuitry formed on a substrate, forming a lower electrode layer on the circuitry, patterning the lower electrode layer to separate pixel-wise into a set of segments, and forming a compound-semiconductor thin film of charcopyrite structure over a whole area of element regions. A resist layer is applied on the compound-semiconductor thin film to pixel-wise pattern in accordance with the lower electrode layer as a base separated into the set of segments, and an ion doping is applied over a whole area of element regions, forming element separating regions in the compound-semiconductor thin film. The method includes removing the resist layer for exposure of surfaces of a set of compound-semiconductor thin films separated pixel-wise by the element separating regions. A transparent electrode layer is formed in a planarizing manner over a whole area of element regions. 19-. (canceled)10. A fabrication method for solid-state imaging devices comprising steps of:having circuitry formed on a substrate;forming a lower electrode layer on the circuitry;patterning the lower electrode layer to separate pixel-wise into a set of segments;forming a compound-semiconductor thin film of charcopyrite structure over a whole area of element regions;applying a resist layer on the compound-semiconductor thin film to pixel-wise pattern in accordance with the lower electrode layer as a base separated into the set of segments;applying an ion doping over a whole area of element regions, forming element separating regions in the compound-semiconductor thin film;removing the resist layer for exposure of surfaces of a set of compound-semiconductor thin films separated pixel-wise by the element separating regions; andforming a transparent electrode layer in a planarizing manner over a whole area of element regions.11. The fabrication method for solid-state imaging devices according to claim 10 , further comprising a step of forming ...

PHOTOELECTRIC CONVERSION DEVICE

It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises a light-absorbing layer including a chalcopyrite-based compound semiconductor and oxygen. The light-absorbing layer includes voids therein. An atomic concentration of oxygen in the vicinity of the voids is higher than an average atomic concentration of oxygen in the light-absorbing layer. 1. A photoelectric conversion device , comprising a light-absorbing layer comprising a chalcopyrite-based compound semiconductor of group I-III-VI and oxygen ,wherein the light-absorbing layer comprises voids therein, and an atomic concentration of oxygen in the vicinity of the voids is higher than an average atomic concentration of oxygen in the light-absorbing layer.2. The photoelectric conversion device according to claim 1 , whereinthe chalcopyrite-based compound semiconductor comprises copper, andin the light-absorbing layer, an atomic concentration of copper in the vicinity of the voids is lower than an average atomic concentration of copper in the light-absorbing layer.3. The photoelectric conversion device according to claim 1 , whereinthe chalcopyrite-based compound semiconductor comprises selenium, andin the light-absorbing layer, an atomic concentration of selenium in the vicinity of the voids is lower than an average atomic concentration of selenium in the light-absorbing layer.4. The photoelectric conversion device according to claim 1 , whereinthe chalcopyrite-based compound semiconductor comprises selenium, andin the light-absorbing layer, an atomic concentration of selenium in the vicinity of the voids is higher than an average atomic concentration of selenium in the light-absorbing layer.5. The photoelectric conversion device according to claim 1 , whereinthe chalcopyrite-based compound semiconductor comprises gallium, andin the light- ...

CZTS/Se PRECURSOR INKS AND METHODS FOR PREPARING CZTS/Se THIN FILMS AND CZTS/Se-BASED PHOTOVOLTAIC CELLS

The present invention relates to coated binary and ternary chalcogenide nanoparticle compositions that can be used as copper zinc tin chalcogenide precursor inks. In addition, this invention relates to coated substrates comprising binary and ternary chalcogenide nanoparticle compositions and provides processes for manufacturing these coated substrates. This invention also relates to compositions of copper zinc tin chalcogenide thin films and photovoltaic cells comprising such films. In addition, this invention provides processes for manufacturing copper zinc tin chalcogenide thin films, as well as processes for manufacturing photovoltaic cells incorporating such films.

SOLUTION-BASED SYNTHESIS OF CsSnI3 THIN FILMS

This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnIfilms on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnIfilms are ideally suited for a wide range of applications such as light emitting and photovoltaic devices. 1. A process of forming CsSnIfilm on a substrate , comprising steps of:(a) providing a substrate;(b) provide CsI solution;{'sub': '2', '(c) provide SnClsolution;'}(d )spray-coating the CsI solution onto the substrate;{'sub': '2', '(e) spray-coating the SnClsolution onto the substrate;'}(f) heat treating the substrate after steps (d) and (e); and{'sub': '3', '(g) forming the CsSnIfilm on the substrate.'}2. The process of claim 1 , wherein the process steps (a) to (e) are performed under ambient condition claim 1 , and a temperature in heat treating step (f) ranging from about 150° C. to about 250° C.3. The process of claim 1 , wherein the substrate is selected from glass claim 1 , ceramic claim 1 , silicon claim 1 , and metal foils.4. The process of claim 1 , wherein the spray-coating steps (d) and (e) independently having a spray speed from about 0.03 to about 0.8 mL/min.5. The process of claim 1 , whereinthe CsI solution in (b) is about 5 wt % to about 50 wt % CsI solution by fully dissolving CsI powder (99.9% purity) in a solvent; and{'sub': 2', '2', '2, 'the SnClsolution in (c) is about 5 wt % to about 80 wt % SnClsolution by fully dissolving SnClpowder (99.9% purity) in a solvent.'}6. The process of claim 5 , whereinthe solvent for dissolving CsI powder (99.9% purity) is selected from the group consisting of water, deionized water, distilled water and mixtures thereof; and{'sub': '2', 'the solvent for dissolving SnClpowder (99.9% purity) is ...

PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL

An aspect of one embodiment, there is provided a photoelectric conversion element, including a first electrode having optical transparency, the first electrode including a first compound comprising at least one selected from (ZnMg)MO and ZnMOS, where M is at least one element selected from B, Al, Ga and In, and x, y, α and β are designated as 0.03≦x≦0.4, 0.005≦y≦0.2, 0.4≦α≦0.9 and 0.005≦β≦0.2, respectively, a second electrode, and an optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a chalcopyrite structure or a stannite structure and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion making homo junction with the p-type portion. 1. A photoelectric conversion element , comprising:{'sub': 1-x', 'x', '1-y', 'y', '1-β', 'β', '1-α', 'α, 'a first electrode having optical transparency, the first electrode including a first compound comprising at least one selected from (ZnMg)MO and ZnMOS, where M is at least one element selected from B, Al, Ga and In, and x, y, α and β are designated as 0.03≦x≦0.4, 0.005≦y≦0.2, 0.4≦α≦0.9 and 0.005≦β≦0.2, respectively;'}a second electrode; andan optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a chalcopyrite structure or a stannite structure and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion and the p-type portion jointly have a homo junction.2. The photoelectric conversion element of claim 1 , wherein{'sub': 1-x', 'x', '1-y', 'y', '1-β', 'β', '1-α', 'α, 'the optical absorption layer further comprises an intermediate layer provided between the first electrode and the n-type portion, the intermediate layer having a higher electrical resistance than an electrical resistance of the first electrode and comprising a second compound which ...

Method of fabricating photodiode

A light-absorbing layer is composed of a compound-semiconductor film of chalcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of chalcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, with an enhanced S/N ratio.

GLASS SUBSTRATE FOR CU-IN-GA-SE SOLAR CELL AND SOLAR CELL USING SAME

A glass substrate for a CIGS solar cell, having high cell efficiency and high glass transition temperature is provided. The glass substrate for a vapor-deposited CIGS film solar cell has a glass transition temperature of at least 580° C. and an average thermal expansion coefficient of from 70×10to 100×10/° C., wherein the ratio of the average total amount of Ca, Sr and Ba within from 10 to 40 nm in depth from the surface of the glass substrate to the total amount of Ca, Sr and Ba at 5,000 nm in depth from the surface of the glass substrate is at most 0.35, and the ratio of the average Na amount within from 10 to 40 nm in depth from the surface of the glass substrate after heat treatment to such average Na amount before the heat treatment is at least 1.5. 1. A glass substrate for a vapor-deposited Cu—In—Ga—Se film solar cell , which has a glass transition temperature of at least 580° C. and an average thermal expansion coefficient of from 70×10to 100×10/° C. , whereinthe ratio of the average total amount (atom %) of Ca, Sr and Ba within from 10 to 40 nm in depth from the surface of the glass substrate to the total amount (atom %) of Ca, Sr and Ba at 5,000 nm in depth from the surface of the glass substrate is at most 0.35,{'sub': '2', 'the ratio of the average Na amount (atom %) within from 10 to 40 nm in depth from the surface of the glass substrate after a heat treatment at 600° C. under a Natmosphere for 1 hour to such average Na amount before the heat treatment is at least 1.5, and'}{'sub': 2', '2', '3', '2', '2', '2', '2', '2', '2, 'the glass substrate comprises, at 5,000 nm or more in depth from the surface of the glass substrate, as represented by mass % based on the following oxides, from 53 to 72% of SiO, from 1 to 15% of AlO, from 0.5 to 9% of MgO, from 0.1 to 11% of CaO, from 0 to 11% or SrO, from 0 to 11% or BaO, from 2 to 11% of NaO, from 2 to 21% of KO and from 0 to 10.5% of ZrO, provided that MgO+CaO+SrO+BaO is from 4 to 25%, CaO+SrO+BaO is from 2 to ...

NANOSTRUCTURED FILMS AND RELATED METHODS

Nanostructured films including a plurality of nanowells, the nanowells having a pore at the top surface of the film, the pore defining a channel that extends downwardly towards the bottom surface of the film are provided. Also provided are methods including exposing a growth substrate to an anodizing bath, applying ultrasonic vibrations to the anodizing bath, and generating a current through the anodizing bath to form the nanostructured film. The nanostructured films may be formed from TiOand may be used to provide solid state dye sensitized solar cells having high conversion efficiencies. 1. A method of forming a nanostructured film , the method comprising:exposing a growth substrate to an anodizing bath, the anodizing bath comprising an electrolyte solution,applying ultrasonic vibrations to the anodizing bath, andgenerating a current through the anodizing bath during the application of the ultrasonic vibrations to form the nanostructured film,wherein the nanostructured film comprises a plurality of tubular nanowells, the tubular nanowells each having a pore at the top surface of the nanostructured film, the pore defining a channel that extends from the top surface of the nanostructured film downwardly towards the bottom surface of the nanostructured film.2. The method of claim 1 , wherein the growth substrate is a metal growth substrate and the nanostructured film is a metal oxide nanostructured film.3. The method of claim 1 , wherein the growth substrate is a titanium growth substrate and the nanostructured film is a titanium oxide nanostructured film.4. The method of claim 1 , wherein the amplitude of the ultrasonic vibrations is in the range of from about 1 μm to about 500 μm.5. The method of claim 1 , wherein the frequency of the ultrasonic vibrations is in the range of from about 15 kHz to about 2000 kHz.6. The method of claim 1 , wherein the current is generated by applying a voltage across the growth substrate and a cathode having a rough surface.7. The ...

NANOWIRES AND METHODS OF MAKING AND USING

Nanorod and nanowire compositions are disclosed comprising copper indium selenide, copper indium gallium selenide, copper indium sulfide, or a combination thereof. Also disclosed are photovoltaic devices comprising the nanorod and/or nanowire compositions. Also disclosed are methods for producing the nanorod and nanowire compositions, and photovoltaic devices described herein. 1. A nanowire or nanorod comprising a CIS material , a CIGS material , or a combination thereof.2. The nanowire or nanorod of claim 1 , comprising a CIS material.3. The nanowire or nanorod of claim 1 , comprising a CIGS material.4. The nanowire or nanorod of claim 1 , wherein the CIS material and/or the CIGS material comprises at least one of copper indium selenide claim 1 , copper indium gallium selenide claim 1 , copper indium sulfide claim 1 , or a combination thereof.5. The nanowire or nanorod of claim 1 , comprising copper indium selenide.6. The nanowire or nanorod of claim 1 , comprising copper indium gallium selenide.7. The nanowire or nanorod of claim 1 , comprising copper indium sulfide.8. The nanowire or nanorod of claim 1 , the general formula Cu(InGa)Se claim 1 , wherein x is from about 0 to about 1.9. The nanowire or nanorod of claim 1 , having the formula CuInSe.10. The nanowire or nanorod of claim 1 , wherein the material exhibits no or substantially no twinning.11. The nanowire or nanorod of claim 1 , wherein the material is comprised of a single phase.12. The nanowire or nanorod of claim 1 , comprising a chalcopyrite CIS.13. The nanowire or nanorod of claim 1 , comprising a disordered sphalerite phase.14. The nanowire or nanorod of claim 1 , comprising no or substantially no agglomerated material.15. The nanowire or nanorod of claim 1 , wherein the nanowire or nanorod is capable or being printed onto a substrate.16. A layered structure comprising the nanowire or nanorod of .17. The layered structure of claim 16 , wherein at least one layer disposed therein comprises the ...

Film inspection method

A method for forming a defect marker on a thin film of a photovoltaic device by plating to detect pinholes and/or electrical shunts during device fabrication is disclosed. Also disclosed is a system for implementing such a method.

Closed-Space Sublimation Process for Production of CZTS Thin-Films

In one embodiment, a method includes depositing a CZT(S, Se) precursor layer onto a substrate, introducing a source-material layer comprising Sn(S, Se) into proximity with the precursor layer, and annealing the precursor layer in proximity with the source-material layer in a constrained volume.

Closed-Space Annealing of Chalcogenide Thin-Films with Volatile Species

In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.

Solar cell and method for manufacturing the same

Disclosed are a solar cell and a method for manufacturing the same. The solar cell includes a plurality of cells. Each cell includes a substrate, a back electrode layer on the substrate, a light absorbing layer on the back electrode layer, a buffer layer on the light absorbing layer, and a window layer on the buffer layer. When a width of each cell is W 1 , and a thickness of the window layer is W 2 , the width of each cell and the thickness of the window layer satisfy an equation of W 2 =A×W 1 , in which the A has a value in a range of about 1×10 −4 to 1.7×10 −4 .

Production Line to Fabricate CIGS Thin Film Solar Cells via Roll-to-Roll Processes

An industrial production line is presented to fabricate CIGS thin film solar cells on continuous flexible substrates in roll-to-roll processes. It provides an entire solution including procedures and related equipments from starting blank substrates to completed solar cells that can be used to fabricate solar modules. This production line contains some core apparatuses, such as a modular electroplating system to deposit CIGS materials, a modular thermal reactor to annealing the CIGS films, and a chemical bath deposition reactor to coat CdS buffer layer, are recently invented by the present inventor. The present production line can be conveniently used to prepare the CIGS thin film solar cells with high efficiency but low cost.

Monolithically integrated solar modules and methods of manufacture

A monolithically integrated cadmium telluride (CdTe) photovoltaic (PV) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer and a CdTe absorber layer. The back contact metal layer is disposed between the insulating layer and the CdTe absorber layer. The PV module further includes a window layer and a second electrically conductive layer. The window layer is disposed between the CdTe absorber layer and the second electrically conductive layer. At least one first trench extends through the back contact metal layer, at least one second trench extends through the absorber and window layers, and at least one third trench extends through the second electrically conductive layer. A method for monolithically integrating CdTe PV cells is also provided.

LIQUID ELECTROLYTE-FREE, SOLID-STATE SOLAR CELLS WITH INORGANIC HOLE TRANSPORT MATERIALS

Photovoltaic cells incorporating the compounds A/M/X compounds as hole transport materials are provide. The A/M/X compounds comprise one or more A moieties, one or more M atoms and one or more X atoms. The A moieties are selected from organic cations and elements from Group 1 of the periodic table, the M atoms are selected from elements from at least one of Groups 3, 4, 5, 13, 14 or 15 of the periodic table, and the X atoms are selected from elements from Group 17 of the periodic table. 1. A photovoltaic cell comprising:(a) a first electrode comprising an electrically conductive material;(b) a second electrode comprising an electrically conductive material;(c) a photoactive material disposed between, and in electrical communication with, the first and second electrodes; and(d) a hole transporting material comprising an A/M/X compound, wherein the hole transporting material is disposed between the first and second electrodes and is configured to facilitate the transport of holes generated in the photoactive material to one of the first and second electrodes;wherein an A/M/X compound is a compound comprising one or more A moieties, one or more M atoms and one or more X atoms, where the A moieties are selected from organic cations and elements from Group 1 of the periodic table, the M atoms are selected from elements from at least one of Groups 3, 4, 5, 13, 14 or 15 of the periodic table, and the X atoms are selected from elements from Group 17 of the periodic table.2. The photovoltaic cell of claim 1 , wherein the photoactive material is in the form of a porous film and the hole transporting material takes the form of a coating that infiltrates the pores of the porous film.3. The photovoltaic cell of claim 1 , wherein the photoactive material comprises a porous film of semiconductor oxide having a photosensitizing dye adsorbed thereon.4. The photovoltaic cell of claim 1 , wherein the hole transporting material comprises a p-type semiconducting A/M/X compound and the ...

PHOTOVOLTAIC SEMICONDUCTIVE MATERIALS

The disclosure provides semiconductive material derived from group IV elements that are useful for photovoltaic applications. 1. A semiconductive device , comprising:a substrate layer; and{'sub': 2', '1', '2', '2', '1', '2, 'at least one absorber layer comprising Zn-IV-Nor Zn-IV-IV-N, where IV=Sn, Ge, or Si deposited on the substrate layer and wherein IVand IVare not the same.'}2. The semiconductive device of claim 1 , wherein the substrate is selected from the group consisting of silicon claim 1 , silicon carbide claim 1 , sapphire claim 1 , aluminum nitride and Ga—N.3. The semiconductive device of claim 1 , wherein the substrate is selected from the group consisting of silicon claim 1 , silicon carbide claim 1 , sapphire and aluminum nitride and wherein a layer of Ga—N is layered on the substrate.4. The semiconductive device of claim 3 , further comprising a nucleation layer between the substrate and the Ga—N buffer layer.5. The semiconductive device of claim 1 , wherein the absorber layer comprises ZnSnN.6. The semiconductive device of claim 5 , further comprising a window layer of ZnSiN.7. The semiconductive device of claim 1 , wherein the absorber layer comprises a ZnSnN/ZnGeNtype II heterojunction.8. The semiconductive device of claim 1 , wherein the absorber layer comprises gradual band gap absorber layers made of ZnSnGeN.9. The semiconductive device of claim 5 , wherein the ZnSnNlayer exhibit the wurtzite-derived Pna2orthorhombic structure.10. The semiconductive device of having one or more of the following characteristics selected from the group consisting of:(a) a band gap of about 1.4 eV at zero Kelvin;(b) an optical band gap of about 2.1 eV; and{'sup': 21', '−2, '(c) electron concentrations of about 10cm.'}11. A method of making a semiconductive ZnSnNthin film claim 9 , comprising RF-sputtering (i) ZnSn claim 9 , or (ii) Zn and Sn in an Ar/Nplasma on a substrate.12. A method of making ZnSnGeNalloy thin films with 0 Подробнее

METHOD FOR MANUFACTURING SOLAR CELLS AND SOLAR CELLS MANUFACTURED THEREBY

The present invention provides a method for manufacturing solar cells and the solar cells manufactured thereby. The method is capable of manufacturing flexible solar cells simply, by attaching a flexible substrate on a second electrode after forming multiple layers such as a copper indium gallium selenide (CIGS) absorption layer on a sacrificial substrate under a high temperature process. Additionally, a separation film is removed by a laser or by selective wet etching after the attachment of the flexible substrate. Therefore, flexible CIGS solar cells having high efficiency can be achieved. 1. A method of manufacturing a solar cell comprising:forming a release layer on a sacrificial substrate;forming a first electrode, an optical absorption layer, a buffer layer, a window layer, and a second electrode, sequentially, on the release layer;forming a flexible substrate on the second electrode; andremoving the release layer to detach the sacrificial substrate from the first electrode,wherein the release layer is formed from a gallium oxide nitride (GaOxNy) layer, where 0 Подробнее

COMPOUND SEMICONDUCTOR

A compound semiconductor contains main constituent elements all of which satisfy the relationship (CuA)(ZnB)(SnC)(SnSe)and having a CZTSX-based compound as a main phase, where −0.3≦a≦0.3, −0.3 ≦b≦0.3, −0.3≦c≦0.3, −0.3≦d≦0.3, 0≦w<0.5, 0≦x <0.5, 0≦y<0.5, 0≦z<1.0 and 0 Подробнее

PHOTOELECTRIC CONVERSION DEVICE

The present invention aims to improve the conversion efficiency in a photoelectric conversion device. 1. A photoelectric conversion device comprising:an electrode;a first semiconductor layer containing a Group compound semiconductor and located on the electrode; anda second semiconductor layer having a conductivity type different from that of the first semiconductor layer and located on the first semiconductor layer, wherein;{'sub': VI', 'I', 'VI', 'I', 'VI', 'I, 'in the first semiconductor layer, a ratio C/Cof the content Cof a Group VI-B element to the content Cof a Group I-B element in a surface part of the second semiconductor layer side thereof is larger than the ratio C/Cin a rest part thereof.'}2. The photoelectric conversion device according to claim 1 , wherein a ratio C/Cof the content Cof a Group I-B element to the content Cof a Group III-B element in each of the surface part and the rest part is 0.8 or more and 1.1 or less.3. The photoelectric conversion device according to claim 1 , wherein the average value of the ratio C/Cin the surface part is 2.0 or more and 2.3 or less and the average value of the ratio C/Cin the rest part is 1.6 or more and 1.9 or less.4. The photoelectric conversion device according to claim 1 , wherein the Group I-B element is Cu and the Group VI-B element is Se.5. The photoelectric conversion device according to claim 1 , wherein the first semiconductor layer comprises a void and the porosity of the rest part is larger than the porosity of the surface part.6. The photoelectric conversion device according to claim 1 , wherein the first semiconductor layer is obtained by bonding a plurality of crystal particles and the average particle diameter of the crystal particles in the rest part is smaller than the average particle diameter of the crystal particles in the surface part. The present invention relates to a photoelectric conversion device including a Group I-III-VI compound semiconductor.There are photoelectric conversion ...

DOPED AI PASTE FOR LOCAL ALLOYED JUNCTION FORMATION WITH LOW CONTACT RESISTANCE

Embodiments of the invention generally relate to solar cells having reduced carrier recombination and methods of forming the same. The solar cells have eutectic local contacts and passivation layers which reduce recombination by facilitating formation of a back surface field (BSF). A patterned aluminum back contact doped with a Group III element is disposed on the passivation layer for removing current form the solar cell. The methods of forming the solar cells include depositing a passivation layer including aluminum oxide and silicon nitride on a back surface of a solar cell, and then forming openings through the passivation layer. An aluminum back contact doped with a Group III element is disposed on the passivation layer in a pattern covering the holes, and thermally processed to form a silicon-aluminum eutectic within the openings. 1. A solar cell device , comprising:a substrate; a first sub-layer of aluminum oxide; and', 'a second sub-layer of silicon nitride disposed on the first sub-layer of aluminum oxide;, 'a passivation layer disposed on a non-light-receiving surface of the substrate, the passivation layer having a plurality of openings formed therethrough, the passivation layer comprisinga back contact disposed on the passivation layer in a grid-like pattern covering the openings, the back contact comprising aluminum doped with a Group III element; anda plurality of local contacts formed at an interface of the substrate and the back contact disposed within the openings, the plurality of local contacts comprising a region heavily doped with the Group III element and a silicon-aluminum eutectic alloy formed adjacent to the heavily doped region.2. The solar cell device of claim 1 , wherein the region has an active doping concentration of about 10to about 10atoms per cm.3. The solar cell device of claim 1 , wherein the openings have a pitch within a range of about 100 microns to about 1000 microns and a diameter within a range of about 20 microns to about ...

THIN FILM ALUMINUM-CONTAINING PHOTOVOLTAICS

This invention relates to thin film photovoltaic materials containing aluminum, as well as methods for making materials using polymeric precursor compounds. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, devices and systems for energy conversion, and solar cells. This invention further relates to methods for making CA(I,G,A)S, CAIGAS, A(I,G,A)S, AIGAS, C(I,G,A)S, and CIGAS thin film materials by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate. 1. A thin film material made by a process comprising ,(a) providing one or more CA(I,G,A)S, CAIGAS, A(I,G,A)S, AIGAS, C(I,G,A)S, or CIGAS polymeric precursor compounds or inks thereof;(b) providing a substrate;(c) depositing the compounds or inks onto the substrate; and(d) heating the substrate at a temperature of from about 100° C. to about 650° C. in an inert atmosphere, thereby producing a thin film material.2. The thin film material of claim 1 , wherein the polymeric precursor compounds have the empirical formula (MM)(MMM)((SSe)R) claim 1 , wherein Mis Cu claim 1 , and Mis Ag claim 1 , Mis In claim 1 , Mis Ga claim 1 , Mis Al claim 1 , x is from 0 to 1 claim 1 , y is from 0 to 1 minus t claim 1 , t is from 0.001 to 1 claim 1 , the sum of y plus t is from 0.001 to 1 claim 1 , z is from 0 to 1 claim 1 , u is from 0.5 to 1.5 claim 1 , v is from 0.5 to 1.5 claim 1 , w is from 2 to 6 claim 1 , and R represents R groups claim 1 , of which there are w in number claim 1 , and are independently selected from alkyl claim 1 , aryl claim 1 , heteroaryl claim 1 , alkenyl claim 1 , amido claim 1 , silyl claim 1 , and inorganic and organic ligands.3. The thin film material of claim 2 , wherein t is from 0.001 to 0.5.4. The thin film material of claim 2 , wherein t is from 0.001 to 0.2.5. The thin film ...

Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films

This invention relates to molecular precursors and processes for preparing coated substrates and films of copper indium gallium sulfide/selenides (CIGS/Se). Such films are useful in the preparation of photovoltaic devices. This invention also relates to processes for preparing coated substrates and for making photovoltaic devices.

INTERFACE BETWEEN A I-III-VI2 MATERIAL LAYER AND A MOLYBDENUM SUBSTRATE

The present invention relates to a method for fabricating a thin layer made of a alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer. 1. A method for fabricating a thin layer made of a I-III-VI alloy and having photovoltaic properties ,element I being Copper, element III being Indium and/or Gallium and element VI being Sulfur and/or Selenium,the method comprising first steps of:a) depositing an adaptation layer on a substrate,b) depositing at least one layer comprising at least elements I and/or III, on said adaptation layer,wherein said adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air said adaptation layer.2. The method of claim 1 , wherein step b) comprises a second operation of depositing at least one second layer of I an/or III elements claim 1 , by electrolysis.3. The method of claim 2 , wherein said first and second layers comprise elements I and III and the method further comprises a step of:c) intermixing the first and second layers by a heating process.4. The method of claim 3 , wherein said step c) comprises an annealing operation in an atmosphere comprising at least one element VI.5. The method of claim 1 , wherein said adaptation layer comprises Molybdenum.6. The method of claim 1 , wherein said first layer comprises Copper.7. The method of claim 6 , wherein said first layer has a ...

OXIDE SINTERED BODY AND TABLETS OBTAINED BY PROCESSING SAME

The present invention discloses a tablet for ion plating, which is capable of providing high speed film formation of a transparent conductive film suitable for a solar cell, and continuing film formation without generating crack, fracture or splash; and an oxide sintered body for obtaining the same. The oxide sintered body etc. comprising indium oxide as a main component, and tungsten as an additive element, content of tungsten being 0.001 to 0.15, as an atomic ratio of W/(In+W), characterized in that said oxide sintered body is mainly composed of a crystal grain (A) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and a crystal grain (B) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and has a density of 3.4 to 5.5 g/cm. 1. An oxide sintered body comprising an indium oxide as a main component , and tungsten as an additive element , content of tungsten being 0.001 to 0.15 as an atomic ratio of W/(In W) ,{'sup': '3', 'characterized in that said oxide sintered body is mainly composed of a crystal grain (A) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and a crystal grain (B) composed of the indium oxide phase with a bixbyite type structure, where tungsten is present as a solid solution, and has a density of 3.4 to 5.5 g/cm.'}2. The oxide sintered body according to claim 1 , characterized by further comprising claim 1 , as the additive element claim 1 , one or more kinds of a metal element (M element) selected from a metal element group consisting of titanium claim 1 , zirconium claim 1 , hafnium claim 1 , and molybdenum claim 1 , wherein a total content of tungsten and the M element is 0.001 to 0.15 claim 1 , as an atomic ratio of (W+M)/(In +W+M).3. The oxide sintered body according to claim 1 , characterized in that the content of tungsten is 0.003 to 0.05 claim 1 , as ...

Laser Annealing for Thin Film Solar Cells

A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

Substrate treating method and substrate treating apparatus

A substrate treating method including: a coating step in which a coating film of a liquid material comprising a metal and a solvent is formed on a first substrate and a second substrate; and a heating step in which the coating film is heated in a state where the first substrate and the second substrate are held in a manner such that the coating film formed on the first substrate faces the coating film formed on the second substrate.

SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER

There is provided a semiconductor wafer including a base wafer whose surface is entirely or partially a silicon crystal plane, an inhibitor positioned on the base wafer to inhibit crystal growth and having an opening that reaches the silicon crystal plane, a first crystal layer made of SiGe(0≦x<1) and positioned on the silicon crystal plane that is exposed in the opening, a second crystal layer positioned on the first crystal layer and made of a III-V Group compound semiconductor that has a band gap width larger than a band gap width of the first crystal layer, and a pair of metal layers positioned on the inhibitor and the second crystal layer. The pair of the metal layers are each in contact with the first crystal layer and the second crystal layer. 1. A semiconductor wafer comprising:a base wafer whose surface is entirely or partially a silicon crystal plane;an inhibitor positioned on the base wafer to inhibit crystal growth, and having an opening that reaches the silicon crystal plane;{'sub': x', '1-x, 'a first crystal layer made of SiGe(0≦x<1) and positioned on the silicon crystal plane that is exposed in the opening;'}a second crystal layer positioned on the first crystal layer and made of a III-V Group compound semiconductor that has a band gap width larger than a band gap width of the first crystal layer; anda pair of metal layers positioned on the inhibitor and the second crystal layer, whereinthe pair of the metal layers are each in contact with the first crystal layer and the second crystal layer.2. The semiconductor wafer according to claim 1 , further comprising:an insulating portion electrically insulating the pair of the metal layers from each other and positioned on the second crystal layer, whereinthe insulating portion is made of an oxide or a nitride of a metal atom of the metal layers.3. The semiconductor wafer according to claim 2 , whereina shorter side of the insulating portion is 1 μm or less.4. The semiconductor wafer according to any one of ...

PHOTOELECTRIC CONVERSION DEVICE

It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof. 1. A photoelectric conversion device wherein a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together is used as a light-absorbing layer , each of the semiconductor particles including a group I-III-VI compound , each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.2. The photoelectric conversion device according to claim 1 , wherein the composition ratio PVI of a group VI-B element to a group III-B element is higher in the surface portion of each of the semiconductor particles than in the central portion thereof.3. The photoelectric conversion device according to claim 2 , wherein the composition ratio PI and the composition ratio PVI in each of the semiconductor particles increase gradually toward a surface of each of the semiconductor particles.4. The photoelectric conversion device according to claim 1 , wherein the group I-III-VI compound includes Cu as the group I-B element claim 1 , and includes Se as the group III-B element.5. The photoelectric conversion device according to claim 4 , wherein the group I-III-VI compound includes In and Ga as the group III-B element.6. The photoelectric conversion device according to claim 1 , wherein the light-absorbing layer includes a plurality of voids. The ...

SOLAR CELL, AND PROCESS FOR PRODUCING SOLAR CELL

A solar cell that can increase open-circuit voltage compared to the conventional solar cell, and as a result, can increase conversion efficiency. The solar cell includes a first absorber layer and a second absorber layer, wherein the first absorber layer is a p-type semiconductor layer containing a Ib group element, a IIIb group element, and a VIb group element and including a peak of luminescence whose half width is not less than 1 meV and not more than 15 meV in a photoluminescence spectrum or a cathodoluminescence spectrum; and the second absorber layer contains a Ib group element, a IIIb group element, and a VIb group element, the composition ratio of the Ib group element to the IIIb group element is not less than 0.1 and less than 1.0, and the second absorber layer is provided on the side of the light entering surface of the first absorber layer. 1. A solar cell comprising:a first absorber layer and a second absorber layer,the first absorber layer being a p-type semiconductor layer containing a Ib group element, a IIIb group element, and a VIb group element, and including a peak of luminescence whose half width is not less than 1 meV and not more than 15 meV in a photoluminescence spectrum or a cathodoluminescence spectrum,the second absorber layer containing a Ib group element, a IIIb group element, and a VIb group element, a composition ratio of the Ib group element to the IIIb group element being not less than 0.1 and less than 1.0, the second absorber layer being provided on a side of a light entering surface of the first absorber layer.2. The solar cell according to claim 1 , wherein the composition ratio of the Ib group element to the IIIb group element contained in the first absorber layer is 1.0.3. The solar cell according to claim 1 , wherein the Ib group element and IIIb group element contained in the second absorber layer formed on the first absorber layer are the same as the Ib group element and IIIb group element contained in the first absorber ...

THIN-FILM PHOTOVOLTAIC DEVICE AND FABRICATION METHOD

A method to fabricate thin-film photovoltaic devices () comprising a photovoltaic Cu(In,Ga)Seor equivalent ABC absorber layer (), such as an ABClayer, deposited onto a back-contact layer () characterized in that said method comprises at least five deposition steps, wherein the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio A/B, in the third at a ratio A/Blower than the previous, in the fourth at a ratio A/Bhigher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements. The resulting photovoltaic devices are characterized in that, starting from the light-exposed side, the absorber layer () of the photovoltaic devices () comprises a first region () of decreasing Ga/(Ga+In) ratio, followed by a second region () of increasing Ga/(Ga+In) ratio where over the light-exposed half side of the second region () the value of Ga/(Ga+In) increases by less than 0.15 and contains at least one hump. 1. A method of fabricating at least one absorber layer for thin-film photovoltaic devices , which absorber layer is made of an ABC chalcogenide material , including ABC chalcogenide material quaternary , pentanary , or multinary variations , wherein A represents elements in group 11 of the periodic table of chemical elements as defined by the International Union of Pure and Applied Chemistry including Cu and Ag , B represents elements in group 13 of the periodic table including In , Ga , and Al , and C represents elements in group 16 of the periodic table including S , Se , and Te , where said absorber layer is deposited onto a back-contact layer carried by a substrate , said method comprising the following sequential steps (s) to (s) , wherein the two steps (s) and (s) are executed at least once and may be ...

Photovoltaic cells

This disclosure features an article that includes first and second electrodes, a photoactive layer between the first and second electrodes, and a hole carrier layer between the first electrode and the photoactive layer. The hole carrier layer includes a Cu(I)-containing material. The article is configured as a photovoltaic cell.

SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF

A semiconductor device including photosensor capable of imaging with high resolution is disclosed. The semiconductor device includes the photosensor having a photodiode, a first transistor, and a second transistor. The photodiode generates an electric signal in accordance with the intensity of light. The first transistor stores charge in a gate thereof and converts the stored charge into an output signal. The second transistor transfers the electric signal generated by the photodiode to the gate of the first transistor and holds the charge stored in the gate of the first transistor. The first transistor has a back gate and the threshold voltage thereof is changed by changing the potential of the back gate. 1. (canceled)2. A semiconductor device comprising a plurality of photosensors , at least one of the plurality of photosensors comprising:a photodiode; andfirst and second transistors each comprising a gate, a first terminal, and a second terminal,wherein:the photodiode is electrically connected to the first terminal of the second transistor, andthe second terminal of the second transistor is electrically connected to the gate of the first transistor.3. The semiconductor device according to claim 2 ,wherein the first transistor further comprises a gate insulating layer and a semiconductor layer.4. The semiconductor device according to claim 3 ,wherein the first transistor further comprises an insulating film and a back gate.5. The semiconductor device according to claim 3 ,wherein the semiconductor layer is included in a channel formation region and comprises an oxide semiconductor.6. The semiconductor device according to claim 2 ,wherein the second transistor comprises a channel formation region comprising an oxide semiconductor.7. The semiconductor device according to claim 2 , further comprising a third transistor claim 2 ,wherein a first terminal of the third transistor is electrically connected to the first terminal of the first transistor.8. The semiconductor ...

Sputtering target and method for producing same

Provided are a sputtering target that is capable of forming a Cu—Ga film, which has an added Ga concentration of 1 to 40 at % and into which Na is well added, by a sputtering method and a method for producing the sputtering target. The sputtering target has a component composition that contains 1 to 40 at % of Ga, 0.05 to 2 at % of Na as metal element components other than F, S and Se, and the balance composed of Cu and unavoidable impurities. The sputtering target contains Na in at least one form selected from among sodium fluoride, sodium sulfide, and sodium selenide, and has a content of oxygen of from 100 to 1,000 ppm.

PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE

A photoelectric conversion device includes a light-absorbing layer including a compound semiconductor capable of photoelectric conversion, the compound semiconductor containing a group Ib element including Cu, a group IIIb element and a group VIb element; and a semiconductor layer on one surface-side of the light-absorbing layer, the semiconductor layer having a plane orientation different from that of the light-absorbing layer, the semiconductor layer containing a group Ib element including Cu, at least one element selected from Cd, Zn and In, and a group VIb element. The photoelectric conversion device includes a region in which Cu content decreases from the light-absorbing layer to the semiconductor layer across a junction interface. 1. A photoelectric conversion device comprising:a light-absorbing layer including a compound semiconductor capable of photoelectric conversion, the compound semiconductor containing a group Ib element including Cu, a group IIIb element and a group VIb element; anda semiconductor layer on one surface-side of the light-absorbing layer, the semiconductor layer having a plane orientation different from that of the light-absorbing layer, the semiconductor layer containing a group Ib element including Cu, at least one element selected from Cd, Zn and In, and a group VIb element,wherein the photoelectric conversion device includes a region in which Cu content decreases from the light-absorbing layer to the semiconductor layer across a junction interface.2. The photoelectric conversion device according to claim 1 , wherein a Cu-deficient portion is present locally in the one surface-side of the light-absorbing layer claim 1 , the Cu-deficient portion including a high content of the at least one element selected from Cd claim 1 , Zn claim 1 , and In claim 1 , and a low content of Cu.3. The photoelectric conversion device according to claim 1 , wherein the group VIb element included in the light-absorbing layer includes Se and the group VIb ...

Plasma annealing of thin film solar cells

Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma.

CRYSTALLINE SILICON SOLAR CELL WATER, AND SOLAR CELL EMPLOYING THE SAME

The disclosure provides a crystalline silicon solar cell wafer, and a solar cell employing the same. The crystalline silicon solar cell wafer, having an edge isolation structure, includes: a crystalline silicon substrate having a first surface, a second surface, and a side surface, and an insulating layer formed merely on the side surface of the crystalline silicon substrate. 1. A crystalline silicon solar cell wafer , comprising:a crystalline silicon substrate, wherein the crystalline silicon substrate has a first surface, a second surface, and a side surface; andan insulating layer formed merely on the side surface of the crystalline silicon substrate.2. The crystalline silicon solar cell wafer as claimed in claim 1 , wherein the insulating layer covers merely on entire the side surface of the crystalline silicon substrate claim 1 , and the insulating layer directly contacts with the crystalline silicon substrate.3. The crystalline silicon solar cell wafer as claimed in claim 1 , wherein the crystalline silicon substrate is a single crystalline silicon substrate claim 1 , or a poly-crystalline silicon substrate.4. The crystalline silicon solar cell wafer as claimed in claim 1 , wherein the crystalline silicon substrate is an n-doped crystalline silicon substrate claim 1 , or a p-doped crystalline silicon substrate.5. The crystalline silicon solar cell wafer as claimed in claim 1 , wherein the insulating layer has a resistivity of not less than 1×10ohm·m.6. The crystalline silicon solar cell wafer as claimed in claim 1 , wherein the insulating layer is a silicon-containing insulating layer.7. The crystalline silicon solar cell wafer as claimed in claim 1 , wherein the insulating layer has a single-layer structure consisting of silicon oxide claim 1 , silicon nitride claim 1 , or silicon oxynitride.8. The crystalline silicon solar cell wafer as claimed in claim 1 , wherein the insulating layer has a multi-layer structure selected from a group of silicon oxide layer ...

PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL

A photoelectric conversion element of an embodiment includes a p-type light absorbing layer containing Cu, at least one or more Group IIIb elements selected from the group including Al, In and Ga, and at least one or more elements selected from the group including O, S, Se and Te; and an n-type semiconductor layer formed on the p-type light absorbing layer and represented by any one of ZnMOS, ZnMgMO (wherein M represents at least one element selected from the group including B, Al, In and Ga), and GaP with a controlled carrier concentration, while x, y and z in the formulas ZnMOSand ZnMgMO satisfy the following relations: 0.55≦x≦1.0, 0.001≦y≦0.05, and 0.002≦y+z≦1.0. 1. A photoelectric conversion element comprising:a p-type light absorbing layer containing copper (Cu), at least one or more Group IIIb elements selected from the group including aluminum (Al), indium (In) and gallium (Ga), and at least one or more elements selected from the group including oxygen (O), sulfur (S), selenium (Se) and tellurium (Te); and{'sub': 1-y', 'y', '1-x', 'x', '1-y-z', 'z', 'y, 'an n-type semiconductor layer formed on the p-type light absorbing layer and represented by any one of ZnMOS, ZnMgMO (wherein M represents at least one element selected from the group including boron (B), Al, In and Ga), and gallium phosphide (GaP) with a controlled carrier concentration,'}{'sub': 1-y', 'y', '1-x', 'x', '1-y-z', 'z', 'y, 'wherein x, y and z in the formulas ZnMOSand ZnMgMO satisfy the following relations: 0.55≦x≦1.0, 0.001≦y≦0.05, and 0.002≦y+z≦1.0.'}2. The element according to claim 1 , wherein the GaP is doped with one or more carrier elements selected from the group including S claim 1 , Se and Te.3. The element according to claim 1 , wherein the carrier concentration of the GaP is equal to or greater than 10cmand equal to or less than 10cm.4. The element according to claim 1 , wherein z in the formula ZnMgMO satisfies the relation: 0 Подробнее

PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL

A photoelectric conversion element of an embodiment includes: a light absorbing layer containing Cu, at least one Group IIIb element selected from the group including Al, In and Ga, and S or Se, and having a chalcopyrite structure; and a buffer layer formed from Zn and O or S, in which the ratio S/(S+O) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0. 1. A photoelectric conversion element comprising:a light absorbing layer containing copper (Cu), at least one Group IIIb element selected from the group including aluminum (Al), indium (In) and gallium (Ga), and sulfur (S) or selenium (Se), and having a chalcopyrite structure; anda buffer layer formed from zinc (Zn) and oxygen (O) or sulfur (S),wherein the ratio S/(S+O) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0.2. The element according to claim 1 , wherein the molar ratio of Ga/Group IIIb elements of the light absorbing layer is equal to or greater than 0.5 and equal to or less than 1.0.3. The element according to claim 1 , wherein the difference in the conduction band minimum of the light absorbing layer and the conduction band minimum of the buffer layer is equal to or greater than 0 and equal to or less than 0.4.4. The element according to claim 1 , wherein the element ratio of Ga/(Ga+In) of the light absorbing layer is equal to or greater than 0.5 and equal to or less than 1.0.5. The element according to claim 1 , wherein the element ratio of Ga/(Ga+In) of the light absorbing layer is equal to or greater than 0.6 and equal to or less than 0.9.6. The element according to claim 1 , wherein the element ratio of Ga/(Ga+In) of the light absorbing layer is equal to or greater than 0.65 and equal to or less than 0.85.7. The element ...

COPPER OXIDE CORE/SHELL NANOCRYSTALS FOR USE IN PHOTOVOLTAIC CELLS

The present application relates to a copper oxide nanocrystal with a cupric oxide (CuO) shell surrounding a cuprous oxide (CuO) core. The copper oxide core/shell nanocrystals may be used as photo-absorbers in photovoltaic cells. The copper oxide core/shell nanocrystals form a p-type semiconductor layer that coats and fills the interstitial gaps of the n-type semiconductor mesoporous structure in a photovoltaic cell. The n-type semiconductor layer may include, for example, titanium dioxide (TiO) particles. 1. A nanocrystal comprising:{'sub': '2', 'a core comprising cuprous oxide (CuO); and'}a shell comprising cupric oxide (CuO), wherein the shell surrounds at least a portion the core, and wherein the shell has a thickness between 2 nm and 20 nm, andwherein the nanocrystal has a size between 5 nm and 50 nm.2. The nanocrystal of claim 1 , wherein the nanocrystal has a size between 5 nm and 10 nm.3. The nanocrystal of claim 1 , wherein the core has a diameter claim 1 , wherein the core and the shell each independently have a hole mobility claim 1 , and wherein the ratio of the diameter of the core to the thickness of the shell corresponds to the ratio of the hole mobility of the core to the hole mobility of the shell.4. The nanocrystal of claim 1 , wherein the core has a diameter claim 1 , and wherein the ratio of the diameter of the core to the thickness of the shell is 10-75:0.1-5.5. The nanocrystal of claim 1 , wherein the shell completely surrounds the core.6. The nanocrystal of claim 1 , wherein the nanocrystal is substantially spherical.7. A device comprising:{'sub': '2', 'a p-type semiconductor layer, wherein the p-type semiconductor layer comprises a plurality of nanocrystals, wherein each nanocrystal comprises a core comprising cuprous oxide (CuO), and a shell comprising cupric oxide (CuO); and'}a n-type semiconductor layer, wherein the n-type semiconductor layer comprises a plurality of metal oxide particles.8. The device of claim 7 , wherein the metal oxide ...

Hematite Photovoltaic Junctions

Photochemical devices having hematite photovoltaic junctions and methods for forming such devices are disclosed. In some embodiments, a photovoltaic device includes a substrate and a photovoltaic junction deposited on the substrate, the photovoltaic junction having a n-type hematite and a p-type hematite. 1. A photovoltaic device comprising:a substrate; anda photovoltaic junction deposited on the substrate, the photovoltaic junction having a n-type hematite and a p-type hematite.2. The photovoltaic device of wherein an interface between the n-type hematite and the p-type hematite is substantially uniform.3. The photovoltaic device of wherein an interface between the n-type hematite and the p-type hematite is substantially defect free.4. The photovoltaic device of wherein n interface between the n-type hematite and the p-type hematite is substantially grain boundary free.5. The photovoltaic device of wherein an entire length of the p-type hematite has a consistent thickness.6. The photovoltaic device of wherein the substrate is a metal oxide.7. The photovoltaic device of wherein the substrate is a semiconductor.8. The photovoltaic device of wherein the substrate comprises a plurality of connected and spaced apart nanobeams linked together at an angle of about 90°.9. A device for splitting water comprising:a first compartment having a first electrode, the electrode comprising a substrate, and a photovoltaic junction deposited on the substrate, the photovoltaic junction having a n-type hematite and a p-type hematite;a second compartment having a second electrode counter to the first electrode; anda semi-permeable membrane separating the first compartment and the second compartment.10. The device of wherein an interface between the n-type hematite and the p-type hematite is substantially uniform.11. The device of wherein an interface between the n-type hematite and the p-type hematite is substantially defect free.12. The device of wherein an interface between the n-type ...

METHODS FOR PRODUCING CHALCOPYRITE COMPOUND THIN FILMS FOR SOLAR CELLS USING MULTI-STAGE PASTE COATING

Disclosed are methods for producing chalcopyrite compound (e.g., copper indium selenide (CIS), copper indium gallium selenide (CIGS), copper indium sulfide (CIS) or copper indium gallium sulfide (CIGS)) thin films. The methods are based on solution processes, such as printing, particularly, multi-stage coating of pastes or inks of precursors having different physical properties. Chalcopyrite compound thin films produced by the methods can be used as light-absorbing layers for thin-film solar cells. The use of the chalcopyrite compound thin films enables the fabrication of thin-film solar cells with improved efficiency at low costs. 1. A method for producing a chalcopyrite compound thin film , the method comprising(a) mixing a first metal precursor, a first organic binder, and a first water-soluble solvent to obtain a first paste,(b) mixing a second metal precursor, a second organic binder, and a second water-soluble solvent to obtain a second paste,(c) coating the first paste on a conductive substrate to form a first paste layer,(d) coating the second paste on the first paste layer to form a second paste layer,(e) thermally treating the coated conductive substrate in air or an oxygen atmosphere to obtain a mixed oxide thin film, and(f) thermally treating the mixed oxide thin film in a sulfur gas, a selenium gas or a sulfur/selenium mixed gas atmosphere to form a sulfide or selenide thin film,wherein the first metal precursor and the second metal precursor are identical to or different from each other and are each independently a precursor of one or more Group IB metals, a precursor of one or more Group IIIA metals, or a mixture thereof,the precursor of one or more Group IB metals and the precursor of one or more Group IIIA metals are each independently included in either the first metal precursor or the second metal precursor or both of them,the first water-soluble solvent and the second water-soluble solvent are identical to or different from each other and are ...

CONTROLLED DEPOSITION OF PHOTOVOLTAIC THIN FILMS USING INTERFACIAL WETTING LAYERS

A method for forming a photovoltaic device by depositing at least one wetting layer onto a substrate where the wetting layer is ≦100 nm and sputtering a photovoltaic material onto the wetting layer where the wetting layer interacts with the photovoltaic material. Also disclosed is the related photovoltaic device made by this method. The wetting layer may comprise any combination of InSe, CuSe, CuSe, GaSe, InS, CuS, CuS, GaS, CuInSe, CuGaSe, InGaSewhere 0≦x≦2, CuInS, CuGaS, InGaSwhere 0≦x≦2, InSeSwhere 0≦x≦3, CuSeSwhere 0≦x≦2, CuSeS, (0≦x≦1), GaSeSwhere 0≦x≦3, and InGaSSwhere 0≦x≦2, 0≦y≦3. The photovoltaic material may be a CIGS (copper indium gallium diselenide) material or a variation of a CIGS material where a CIGS component is replaced or supplemented with any combination of sulfur, tellurium, aluminum, and silver. 1. A method for forming a photovoltaic device , comprising:depositing at least one wetting layer onto a substrate wherein the wetting layer is less than or equal to 100 nm; anddepositing a photovoltaic material onto the wetting layer wherein the wetting layer interacts with the photovoltaic material.2. The method of claim 1 , wherein the wetting layer comprises InSe claim 1 , CuSe claim 1 , CuSe claim 1 , GaSe claim 1 , InS claim 1 , CuS claim 1 , CuS GaS claim 1 , CuInSe claim 1 , CuGaSe claim 1 , InGaSewhere 0≦x≦2 claim 1 , CuInS claim 1 , CuGaS claim 1 , InGaSwhere 0≦x≦2 claim 1 , InSeSwhere 0≦x≦3 claim 1 , CuSeSwhere 0≦x≦2 claim 1 , CuSeS claim 1 , (0≦x≦1) claim 1 , GaSeSwhere 0≦x≦3 claim 1 , InGaSSwhere 0≦x≦2 claim 1 , 0≦y≦3 claim 1 , or any combination thereof.3. The method of claim 1 , wherein the substrate comprises molybdenum.4. The method of claim 1 , wherein the substrate comprises plastic claim 1 , metal claim 1 , ceramic claim 1 , glass claim 1 , or any combination thereof.5. The method of claim 1 , wherein the photovoltaic material comprises a copper indium gallium diselenide (CIGS) material.6. The method of claim 1 , wherein the ...

LIQUID PRECURSOR FOR DEPOSITION OF COPPER SELENIDE AND METHOD OF PREPARING THE SAME

Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed. 1. A method of preparing a liquid precursor , said method comprising the steps:reducing elemental selenium with a stoichiometric amount of a nitrogen-containing reducing agent in the presence of a first solvent to yield a preliminary precursor solution; andcombining the preliminary precursor solution with a solution of a copper salt and a second solvent, which may be the same or different than the first solvent, to yield the liquid precursor.2. The method of wherein the nitrogen-containing reducing agent having a standard reduction potential less than the standard reduction potential of selenium.3. The method of wherein the nitrogen-containing reducing agent is hydrazine.4. The method of wherein the first and second solvents are each selected from the group consisting of primary amines claim 1 , secondary amines claim 1 , glycols and combinations thereof.5. The method of wherein the first and second solvents are each selected from the group consisting of ethylene diamine claim 1 , pyridine claim 1 , ethanolamine claim 1 , diethylene triamine claim 1 , ethylene glycol claim 1 , and combinations thereof.6. The method of wherein the first and second solvents are ethylene diamine.7. The method of wherein the copper salt is selected from the group consisting of copper chloride claim 1 , copper bromide claim 1 , copper iodide claim 1 , copper acetate claim 1 , copper formate claim 1 , copper nitrate claim 1 , copper trifluoromethanesulfonate claim 1 , and combinations thereof.9. The method of further comprising the step of separating any precipitate formed during the combining step.10. The method of wherein the separation step is carried out using a process selected from the group consisting of ...

INK DEPOSITION PROCESSES FOR THIN FILM CIGS ABSORBERS

Efficient processes for making thin film CIGS photovoltaic light absorber materials on a substrate. The processes involve depositing CIGS polymeric precursor inks in combination with depositing indium gallium selenide molecular precursor inks onto a substrate. 2. The process of claim 1 , wherein the thickness of the layer made by one pass through steps (b) and (c) claim 1 , or made by one pass through steps (e) and (f) is from 100 to 750 nanometers.3. The process of claim 1 , wherein the thickness of the layer made by one pass through steps (b) and (c) claim 1 , or made by one pass through steps (e) and (f) is from 200 to 500 nanometers.4. The process of claim 1 , wherein the ratio of Cu to In plus Ga claim 1 , Cu/(In+Ga) in the CIGS polymeric precursor compound is between 1.30 and 2.5.5. The process of claim 1 , wherein the ratio of Cu to In plus Ga claim 1 , Cu/(In+Ga) in the CIGS polymeric precursor compound is between 1.70 and 2.1.6. The process of claim 1 , wherein the ratio of Ga to In plus Ga claim 1 , Ga/(In+Ga) claim 1 , in the indium gallium selenide molecular precursor ink is from 0.01 to 0.99.7. The process of claim 1 , wherein the CIGS polymeric precursor compound has the empirical formula Cu(InGa)(SeR) claim 1 , wherein x is from 1.3 to 3.0 claim 1 , y is from 0.01 to 0.99 claim 1 , w is from 4.3 to 6 claim 1 , and the R groups are independently selected from alkyl groups.8. The process of claim 1 , wherein steps (e) claim 1 , (f) and (g) are performed before steps (b) claim 1 , (c) and (d) claim 1 , so that the indium gallium selenide molecular precursor ink is deposited on the substrate before the CIGS polymeric precursor ink.9. The process of claim 1 , wherein steps (b) claim 1 , (c) and (d) are performed again after steps (e) claim 1 , (f) and (g) so that layers of the indium gallium selenide molecular precursor ink and the CIGS polymeric precursor ink alternate.10. The process of claim 1 , further comprising applying heat claim 1 , light claim 1 , ...

COMPACTLY-INTEGRATED OPTICAL DETECTORS AND ASSOCIATED SYSTEMS AND METHODS

Compactly-integrated electronic structures and associated systems and methods are provided. Certain embodiments relate to the ability to integrate nanowire-based detectors with optical components. 1. An optical detection system , comprising: a nanowire comprising a material that is electrically superconductive under at least some conditions, and', 'a detector substrate that supports the nanowire,', 'wherein the solid volume of the optical detector is about 10,000,000 cubic microns or less; and, 'an optical detector comprisinga secondary substrate coupled to the optical detector.2. The optical detection system of claim 1 , wherein the sum of solid volumes of the detector substrate claim 1 , the nanowire claim 1 , and detector electrical contacts connected to the nanowire is about 10 claim 1 ,000 claim 1 ,000 cubic microns or less.3. An optical detection system claim 1 , comprising: a nanowire comprising a material that is electrically superconductive under at least some conditions, and', 'a detector substrate that supports the nanowire, the detector substrate having a thickness of about 5 microns or less; and, 'an optical detector comprisinga secondary substrate coupled to the optical detector.4. The optical detection system of claim 1 , wherein the solid volume of the optical detector is about from about 10 cubic microns to about 10 claim 1 ,000 claim 1 ,000 cubic microns.57-. (canceled)8. The optical detection system of claim 1 , wherein the thickness of the detector substrate is from about 30 nm to about 5 microns.910-. (canceled)11. The optical detection system of claim 1 , wherein the detector is a single-photon detector.12. The optical detection system of claim 1 , wherein the nanowire is in direct contact with the detector substrate.13. The optical detection system of claim 1 , wherein the secondary substrate comprises an electrically conductive pathway comprising electrical contacts in electrical communication with the nanowire.14. (canceled)15. The optical ...

Method of increasing the band gap of iron pyrite by alloying with oxygen

A method of increasing the band gap of iron pyrite by alloying with oxygen is disclosed. According to one embodiment, a method comprises alloying iron pyrite (FeS 2 ) with oxygen to form an iron pyrite and oxygen alloy (FeS 2−x O x ). The iron pyrite and oxygen alloy (FeS 2−x O x ) has a band gap greater than iron pyrite (FeS 2 ).

HYBRID CZTSSe PHOTOVOLTAIC DEVICE

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer. 1. A photovoltaic device , comprising:a first contact; a chalcogenide layer; and', 'a semiconductor layer in contact with the chalcogenide layer;, 'a hybrid absorber layer comprisinga buffer layer formed on the absorber layer; anda transparent conductive contact layer formed on the buffer layer.2. The device as recited in claim 1 , wherein the chalcogenide layer includes Cu—Zn—Sn—S(Se) (CZTSSe).3. The device as recited in claim 2 , wherein the CZTSSe includes CuZnSn(SSe)wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1.4. The device as recited in claim 1 , wherein the semiconductor layer includes a material from one of group IV claim 1 , III-V claim 1 , II-VI and I-III-VI.5. The device as recited in claim 1 , wherein the semiconductor layer includes Cu—In—Ga—S claim 1 ,Se (CIGSSe).6. The device as recited in claim 5 , wherein the CIGSSe layer includes CuInGaSewhere the value of x can vary from 1 to 0.7. The device as recited in claim 1 , wherein the chalcogenide layer is in contact with the buffer layer and the semiconductor layer is in contact with the chalcogenide layer opposite the buffer layer.8. The device as recited in claim 1 , wherein the semiconductor layer is in contact with the buffer layer and the chalcogenide layer is in contact with the semiconductor layer opposite the buffer layer.9. The device as recited in claim 1 , further comprising metal contacts formed on the transparent conductive contact layer and further comprising a substrate on which the first contact is formed.10. The device as recited in claim 1 , further comprising a second semiconductor layer wherein the semiconductor layer and the second semiconductor layer sandwich the chalcogenide ...

SOLAR CELL ABSORBER THIN FILM AND METHOD OF FABRICATING SAME

A charcopyrite-based thin film solar cell device and a method of fabricating the same is described. The solar cell includes a stacked absorber film over a substrate. The stacked absorber film includes at least two sets of absorber materials and each set includes at least three layers. At least one of the three layers includes elemental selenium and at least one of the layers includes a metal selected from the group consisting of copper, indium or gallium. The at least one selenium layer is in contact with the at least one metal layer. The at least two sets form an absorber film including multi-layer embedded selenium. 1. A method for fabricating a solar cell , comprising:forming a back contact on a substrate; and at least one of said layers comprises elemental Se,', 'at least one of said layers comprises a metal selected from the group consisting of Cu, In or Ga, and', 'said at least one Se layer contacts said at least one metal layer., 'forming a stacked absorber film over said back contact by depositing at least two sets of absorber materials, each set comprising at least three layers wherein2. The method as in claim 1 , wherein at least two of said layers in each set comprise one or more metals selected from the group consisting of Cu claim 1 , In or Ga.3. The method as in claim 1 , wherein said stacked absorber film has a ratio of Cu/(Ga+In) in a range of about 0.8˜1.0.4. The method as in claim 1 , wherein said stacked absorber film has a ratio of Ga/(Ga+In) in a range of about 0.2˜0.4.5. The method as in claim 1 , wherein said stacked absorber film has a ratio of Se/metals in a range of about 0˜3.6. The method as in claim 1 , wherein said at least one metal layer comprises CGN claim 1 , CG claim 1 , In claim 1 , (In claim 1 ,Ga)—Se claim 1 , or Cu—Se.7. The method as in claim 1 , wherein at least one layer includes elemental S.8. The method as in claim 1 , wherein said depositing step comprises a hybrid process wherein said at least one metal layer is deposited ...

PHOTOELECTRIC CONVERSION DEVICE

A photoelectric conversion efficiency of a photoelectric conversion device is improved. 1. A photoelectric conversion device , comprising:an electrode layer;a first semiconductor layer disposed on the electrode layer and including a group I-III-VI compound; anda second semiconductor layer disposed on the first semiconductor layer and forming a pn junction with the first semiconductor layer,wherein the first semiconductor layer includes at least one of sulfur, selenium, and tellurium as group VI-B elements and oxygen, andwherein an atomic concentration of oxygen in the first semiconductor layer is lower in a surface portion on the electrode layer side than in a central portion of the first semiconductor layer in a thickness direction thereof.2. The photoelectric conversion device according to claim 1 , wherein the atomic concentration of oxygen in the first semiconductor layer gradually becomes lower toward the electrode layer from the central portion.3. The photoelectric conversion device according to claim 1 ,wherein the first semiconductor layer includes indium and gallium as group III-B elements, and a ratio of atomic concentration of gallium to the total of indium and gallium is higher in the surface portion on the electrode layer side than in the central portion.4. The photoelectric conversion device according to claim 3 , wherein the ratio of atomic concentration of gallium to the total of indium and gallium gradually becomes higher toward the electrode layer from the central portion. The present invention relates to a photoelectric conversion device including a group I-III-VI compound.As a photoelectric conversion device to be used for solar photovoltaic power generation, a device using a group I-III-VI compound such as CIGS having a high optical absorption coefficient as a light absorbing layer is exemplified. Such a photoelectric conversion device is disclosed in, for example, Japanese Unexamined Patent Application Publication No. 8-330614. The group I-III- ...

ORGANIC THIN FILM SOLAR CELL

The present invention aims to provide an organic thin-film solar cell that has a high photoelectric conversion efficiency and excellent durability. The present invention relates to an organic thin-film solar cell including a photoelectric conversion layer, wherein the photoelectric conversion layer includes a portion containing a sulfide of a Group 15 element in the periodic table and a portion containing a donor-acceptor organic semiconductor, and the portion containing a sulfide of a Group 15 element in the periodic table and the portion containing a donor-acceptor organic semiconductor are in contact with each other. 1. An organic thin-film solar cell comprising a photoelectric conversion layer ,wherein the photoelectric conversion layer includes a portion containing a sulfide of a Group 15 element in the periodic table and a portion containing a donor-acceptor organic semiconductor, andthe portion containing a sulfide of a Group 15 element in the periodic table and the portion containing a donor-acceptor organic semiconductor are in contact with each other.2. The organic thin-film solar cell according to claim 1 ,wherein the sulfide of a Group 15 element in the periodic table is antimony sulfide.3. The organic thin-film solar cell according to claim 1 ,wherein the donor-acceptor organic semiconductor is a conductive polymer containing a segment as a donor and a segment as an acceptor that are conjugated to each other.4. The organic thin-film solar cell according to claim 3 ,wherein, in the conductive polymer containing a segment as a donor and a segment as an acceptor that are conjugated to each other, the segment as a donor and/or the segment as an acceptor contains a heterocyclic skeleton.5. The organic thin-film solar cell according to claim 1 ,wherein the photoelectric conversion layer is a laminated body including a layer containing the sulfide of a Group 15 element in the periodic table and a layer containing the donor-acceptor organic semiconductor.6. The ...

MERCURY CHALCOIODIDES FOR ROOM TEMPERATURE RADIATION DETECTION

Methods and devices for detecting incident radiation, such as incident X-rays or gamma-rays, are provided. The methods and devices use single-crystalline mercury chalcoiodide compounds having the formula HgQI, where Q represents a chalcogen atom or a combination of chalcogen atoms, as photoelectric materials. Also provided are methods for growing single-crystals of the mercury chalcoiodide compounds using external organic chemical transport agents. 1. A method for detecting incident radiation , the method comprising:{'sub': 3', '2', '2, 'exposing a material comprising a single-crystal of an inorganic compound having the formula HgQI, where Q represents a chalcogen atom or a combination of chalcogen atoms, to incident X-ray, gamma-ray, or nuclear radiation, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material; and'}measuring at least one of the energy or intensity of the absorbed incident radiation by detecting the generated electrons, holes, or both.2. The method of claim 1 , wherein the material is exposed to the gamma-ray radiation.3. The method of claim 1 , wherein the single-crystal has a length of at least 5 mm and a thickness of at least 1 mm.4. The method of claim 1 , wherein Q represents Se.5. The method of claim 4 , wherein the single-crystal has a length of at least 5 mm and a thickness of at least 1 mm.6. The method of claim 4 , wherein the single-crystal has a width of at least 5 mm.7. The method of claim 4 , wherein the single-crystal has a length of at least 1 cm and a thickness of at least 2 mm.8. The method of claim 1 , wherein Q represents S.9. The method of claim 1 , wherein Q represents Te.10. The method of claim 1 , wherein the method is carried out at temperatures in the range from about 20° C. to about 26° C.11. A device for the detection of incident radiation comprising:{'sub': 3', '2', '2, 'a material comprising a single-crystal of an inorganic compound having the formula HgQI, where Q ...

ALUMINUM-DOPED ZINC OXYSULFIDE EMITTERS FOR ENHANCING EFFICIENCY OF CHALCOGENIDE SOLAR CELL

A photovoltaic device includes a substrate, a first electrode formed on the substrate and a p-type absorber layer including a chalcogenide compound. An n-type layer includes a zinc oxysulfide material having a sulfur content adjusted to match a feature of the absorber layer. A transparent contact is formed on the n-type layer. 1. A photovoltaic device , comprising:a substrate;a first electrode formed on the substrate;a p-type absorber layer including a chalcogenide compound;an n-type layer including a zinc oxysulfide material having a sulfur content adjusted to match a feature of the absorber layer; anda transparent contact formed on the n-type layer.2. The photovoltaic device as recited in claim 1 , wherein the n-type layer includes aluminum doped zinc oxysulfide.3. The photovoltaic device as recited in claim 1 , wherein the n-type layer includes a carrier concentration of greater than 5×10cm.4. The photovoltaic device as recited in claim 1 , wherein the absorber layer includes one of CZTSSe or CIGSSe.5. The photovoltaic device as recited in claim 1 , wherein the feature of the absorber layer includes one or more of band alignment and electron affinity.6. The photovoltaic device as recited in claim 1 , wherein the n-type layer includes an amorphous structure.7. The photovoltaic device as recited in claim 1 , wherein the substrate includes glass claim 1 , the first electrode includes molybdenum (Mo) and the transparent contact includes indium tin oxide (ITO).8. The photovoltaic device as recited in claim 1 , wherein the n-type layer includes Zn(O claim 1 , S) claim 1 , where x is between about 0.1 to about 0.6.9. A photovoltaic device claim 1 , comprising:a substrate;a first electrode formed on the substrate;a p-type absorber layer including a chalcogenide compound comprising one of CZTSSe or CIGSSe;{'sub': 1−x', 'x, 'an n-type layer including Zn(O, S) having a sulfur content adjusted to match one or more of band alignment with adjacent layers and electron affinity ...

CIGS TYPE COMPOUND SOLAR CELL

A CIGS type compound solar cell excellent in both productivity and conversion efficiency is provided. The CIGS type solar cell includes a CIGS light absorbing layer, a buffer layer and a transparent electrode layer provided in this order on a substrate. The buffer layer is made of a mixed crystal compound containing ZnO, MgO and ZnS being present at specific ranges respectively. 13-. (canceled)4. A CIGS type compound solar cell , comprising:a substrate, anda light absorbing layer, a buffer layer and a transparent electrode layer provided in this order over the substrate,wherein the light absorbing layer comprises at least a Group I-III-VI compound semiconductor,wherein the buffer layer comprises a mixed crystal compound comprising ZnO, MgO and ZnS,wherein a ZnS content of the buffer layer is 0.5 to 5.0 mol %.5. A CIGS type compound solar cell , comprising:a substrate, anda light absorbing layer, a buffer layer and a transparent electrode layer provided in this order over the substrate,wherein the light absorbing layer comprises at least a Group I-III-VI compound semiconductor,wherein the buffer layer comprises a mixed crystal compound comprising ZnO, MgO and ZnS,wherein a molar ratio (MgO+ZnS)/(ZnO+MgO+ZnS) of the buffer layer is 0.08 to 0.4. The present invention relates to a CIGS type compound solar cell.Compound solar cells including a light absorbing layer made of a Group I-III-VI compound semiconductor such as a CuInSe(CIS) compound semiconductor containing Group Ib, IIIb and VIb elements or a Cu(In,Ga)Se(CIGS) compound semiconductor prepared in the form of solid solution by incorporating Ga into CuInSeare known to be advantageous in that they can be produced in the form of a thin film as having a higher light conversion efficiency (“light conversion efficiency” will hereinafter be referred to simply as “conversion efficiency”), and are less liable to suffer from reduction in conversion efficiency due to light irradiation or the like.A buffer layer of such a ...

METHOD FOR PRODUCING A THIN FILM CELL ARRANGEMENT

The present invention relates to a method for the production of a thin-film solar cell array in which a plurality of individual thin-film solar cells are applied on a substrate. The individual thin-film solar cells are thereby deposited one above the other in regions so that an overlapping region is produced from respectively one pair of two individual thin-film solar cells; in this region, a series connection of the two thin-film solar cells forming the pair is present. In addition, the thin-film solar cell array has a transition region in which the thin-film solar cell applied on the first solar cell is converted into a layer situated below. 1111333222111333. A method for the production of a thin-film solar cell array , comprising a plurality of thin-film solar cells (I , II , III , . . . ) applied on a substrate (S) , which comprise respectively at least one first rear-side electrode ( , , , . . . ) , which is orientated towards the substrate (S) , and a second electrode and/or a conversion layer ( , , , . . . ) and also a photoactive layer ( , , , . . . ) disposed between the rear-side electrode ( , , , . . . ) and the second electrode and/or the conversion layer ( , , , . . . ) , the thin-film solar cell arraya) having at least one overlapping region (B) in which respectively one first (I, II, . . . ) and one second thin-film solar cell (II, III, . . . ) are disposed in two layers (n, n+1, . . . ) and in pairs (I-II, II-III, . . . ) situated one above the other, one region of the respectively first thin-film solar cell (I, II, . . . ) in a first layer (n, . . . ) and one region of the respectively second thin-film solar cell (II, III, . . . ), which is disposed on the side of the respectively first thin-film solar cell (I, II, . . . ) orientated away from the substrate (S) in a layer (n+1, . . . ) situated above the respectively first thin-film solar cell (I, II, . . . ), being connected to each other and connected electrically in series, and{'b': 1', '1', '2', ...

CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD

The present invention provides a CIGS film production method which ensures that a CIGS film excellent in conversion efficiency can be produced at lower costs with higher reproducibility, and a CIGS solar cell production method using the CIGS film production method. The CIGS film production method includes: a stacking step of stacking an (A) layer containing indium, gallium and selenium and a (B) layer containing copper and selenium in this order in a solid phase over a substrate while heating at a temperature of higher than 250° C. and not higher than 400° C.; and a heating step of further heating the resulting stack of the (A) layer and the (B) layer to melt a compound of copper and selenium in the (B) layer into a liquid phase, whereby copper is diffused from the (B) layer into the (A) layer to cause crystal growth to provide a CIGS film. 1. A CIGS film production method for producing a CIGS film to be used as a light absorbing layer for a CIGS solar cell , the method comprising:a stacking step of stacking an (A) layer containing indium, gallium and selenium and a (B) layer containing copper and selenium in this order in a solid phase over a substrate while heating at a temperature of higher than 250° C. and not higher than 4000° C.; anda heating step of further heating a resulting stack of the (A) layer and the (B) layer to melt the (B) layer into a liquid phase, whereby copper is diffused from the (B) layer into the (A) layer to cause crystal growth to provide the CIGS film.2. The CIGS film production method according to claim 1 , wherein the heating step is performed at a temperature of not lower than 520° C.3. The CIGS film production method according to claim 1 , wherein a temperature increasing rate of not less than 10° C./second is employed for temperature increase from the temperature of the stacking step to the temperature of the heating step.4. The CIGS film production method according to claim 1 , wherein selenium vapor or hydrogen selenide is supplied ...

Solar cell and method of manufacturing the same

A solar cell is provided, and has an organic light-absorbing layer having a perovskite structure, and a hole transport layer disposed on a first surface of the organic light-absorbing layer. The hole transport layer is made of a nickel oxide. A method of manufacturing a solar cell is provided, and has the steps of (1) providing a hole transport layer which is made of a nickel oxide; (2) forming an organic light-absorbing layer having a perovskite structure, which has a first surface on which the hole transporting layer is disposed, and a second surface opposite to the first surface; and (3) forming an electron transport layer on the second surface of the organic light-absorbing layer.

SEMICONDUCTOR BULK STRUCTURE AND OPTICAL DEVICE

A semiconductor bulk structure includes a bulk structure including a portion where two layers of GeSe and one layer of WSare alternately laminated. 1. A semiconductor bulk structure comprising:{'sub': '2', 'a bulk structure including a portion where two layers of GeSe and one layer of WSare alternately laminated.'}2. The semiconductor bulk structure according to claim 1 , wherein the bulk structure has a structure in which two layers of GeSe and one layer of WSare alternately laminated over the entire bulk structure in a thickness direction.3. The semiconductor bulk structure according to claim 1 , wherein the bulk structure includes the portion where two layers of GeSe and one layer of WSare alternately laminated claim 1 , and another layer of GeSe or another layer of WSwhich is laminated on a top or bottom side of the portion in a thickness direction.4. The semiconductor bulk structure according to claim 1 , wherein the semiconductor bulk structure has a band gap corresponding to a near infrared region.5. An optical device comprising:{'sub': '2', 'a semiconductor bulk structure having a bulk structure including a portion where two layers of GeSe and one layer of WSare alternately laminated.'}6. The optical device according to claim 5 , wherein the bulk structure has a structure in which two layers of GeSe and one layer of WSare alternately laminated over the entire bulk structure in a thickness direction.7. The optical device according to claim 5 , wherein the bulk structure includes the portion where two layers of GeSe and one layer of WSare alternately laminated claim 5 , and another GeSe or another WSlaminated on a top or bottom side the portion in a thickness direction.8. The optical device according to claim 5 , wherein the semiconductor bulk structure has a band gap corresponding to a near infrared region.9. The optical device according to claim 5 , wherein the semiconductor bulk structure includes a p type region and an n type region.10. The optical device ...

FABRICATION OF THIN-FILM PHOTOVOLTAIC CELLS WITH REDUCED RECOMBINATION LOSSES

Methods are provided for fabricating photovoltaic cell contacts, which include: providing a block copolymer layer above an electrical contact layer of the photovoltaic cell, the block copolymer layer being self-assembled by phase segregation to include multiple structures of a first polymer material surrounded, at least in part, by a second polymer material; selectively etching the block copolymer layer to remove the multiple structures, forming holes in the block copolymer layer; and using the holes in the block copolymer layer to facilitate providing electrical contacts between a light absorption layer of the photovoltaic cell and the electrical contact layer. For instance, the holes in the copolymer layer may be used in etching a passivation layer over the electrical contact layer to form nano-sized contact openings in the passivation layer to the contact layer. Once provided, the cell's light absorption material forms contacts extending through the contact openings in the passivation layer. 1. A method of fabricating photovoltaic cell contacts , the method comprising:providing a block copolymer layer above an electrical contact layer of a photovoltaic cell, the block copolymer layer being self-assembled by phase segregation to comprise multiple structures of a first polymer material surrounded, at least in part, by a second polymer material;selectively etching the block copolymer layer to remove the multiple structures, forming holes in the block copolymer layer; andproviding a light absorption layer of the photovoltaic cell in direct physical contact with the electrical contact layer of the photovoltaic cell via multiple point contacts, the multiple point contacts reducing recombination losses at the light absorption layer interface with the electrical contact layer, and the providing the light absorption layer using, in part, the holes in the block copolymer layer in defining the multiple point contacts, wherein the electrical contact layer is a back contact ...

METHOD FOR MANUFACTURING A PHOTOVOLTAIC MODULE WITH TWO ETCHING STEPS P1 AND P3 AND CORRESPONDING PHOTOVOLTAIC MODULE

The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (), a photovoltaic layer () obtained by depositing components including metal precursors and at least one element taken from Se and S and by annealing such as to convert said components into a semiconductor material, and another semiconductor layer () in order to create a pn junction with the photovoltaic layer (); characterised in that the metal precursors form, on the electrode on the rear surface (), a continuous layer, while said at least one element forms a layer having at least one break making it possible, at the end of the annealing step, to leave an area () of the layer of metal precursors in the metal state at said break. 14143444341420421422430420. A process for producing a photovoltaic module comprising a plurality of solar cells in a thin film structure , in which the following are successively produced in the structure: a rear-face electrode () , a photovoltaic film () obtained by deposition of constituents comprising metal precursors and at least one element taken from Se and S and , by annealing , to convert these constituents into a semiconducting material , and another semiconducting film () , in order to create a pn junction with the photovoltaic film () , characterized in that the metal precursors form , on the rear-face electrode () , a continuous film () , whereas said at least one element forms a film () exhibiting at least one discontinuity () , making it possible , on conclusion of the annealing , to leave a region () of the film () of metal precursors in the metal state at said discontinuity.2421. The process as claimed in claim 1 , characterized in that the film () of said at least one element is deposited in localized fashion.3. The process as claimed in claim 1 , characterized in that the metal precursors ...

METHODS AND APPARATUS FOR IMAGE SENSOR SEMICONDUCTORS

Methods and apparatus form an image sensor pixel circuit on flexible and non-flexible substrates. At least one indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) is formed at a process temperature of approximately 400 degrees Celsius or less and at least one photodiode is formed on at least one of the at least one IGZO TFT. The at least one photodiode having an absorption layer formed, at least in part, by depositing a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% at a process temperature of less than or equal to approximately 400 degrees Celsius and doping the CIGS material with antimony at a process temperature of less than or equal to approximately 400 degrees Celsius. 1. An apparatus for detecting an image , comprising:a photodiode with an absorption layer of copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70%, the CIGS material doped with antimony; anda pixel circuit electrically interfacing with the photodiode and having at least one indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT).2. The apparatus of claim 1 , wherein the CIGS material has a gallium mole fraction of approximately 57%.3. The apparatus of claim 1 , wherein the apparatus is formed on a flexible substrate.4. The apparatus of claim 3 , wherein the flexible substrate is a biometric substrate.5. The apparatus of claim 1 , wherein the absorption layer absorbs photons with wavelengths up to near infrared.6. The apparatus of claim 1 , wherein the CIGS material is doped with approximately 1.2 mol % to approximately 5 mol % antimony.7. The apparatus of claim 1 , wherein the CIGS material has sub-micron grain sizes.8. The apparatus of claim 1 , wherein the CIGS material absorbs wavelengths less than or equal to approximately 940 nm and is transparent to wavelengths greater than approximately 940 nm.9. The apparatus of claim 1 , wherein the CIGS ...

Photoelectric conversion device, electronic apparatus, and method for manufacturing photoelectric conversion device

A photoelectric conversion device includes: a photoelectric conversion section containing an oxide semiconductor; and a transistor provided corresponding to the photoelectric conversion section, wherein a semiconductor layer of the transistor is made of the same material as that of the oxide semiconductor.

SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE, AND SOLAR POWER GENERATION SYSTEM

A solar cell of an embodiment includes: a substrate; an n-electrode; an n-type layer; a p-type light absorption layer which is a semiconductor of a Cu-based oxide; and a p-electrode. The n-electrode is disposed between the substrate and the n-type layer. The n-type layer is disposed between the n-electrode and the p-type light absorption layer. The p-type light absorption layer is disposed between the n-type layer and the p-electrode. The n-type layer is disposed closer to a light incident side than the p-type light absorption layer. The substrate is a single substrate included in the solar cell. 1. A solar cell , comprising:a substrate;an n-electrode;an n-type layer;a p-type light absorption layer which is a semiconductor of a Cu-based oxide; anda p-electrode, whereinthe n-electrode is disposed between the substrate and the n-type layer,the n-type layer is disposed between the n-electrode and the p-type light absorption layer,the p-type light absorption layer is disposed between the n-type layer and the p-electrode,the n-type layer is disposed closer to a light incident side than the p-type light absorption layer, andthe substrate is a single substrate included in the solar cell.2. The cell according to claim 1 , whereinthe p-electrode includes a first p-electrode and a second p-electrode,the first p-electrode and the second p-electrode are stacked,the first p-electrode is in direct contact with the p-type light absorption layer, andthe first p-electrode is an Sn-based metal oxide.3. The cell according to claim 2 , whereinthe second p-electrode is a single layer film or a laminated film made of material selected from the group consisting of a metal film, an intermetallic compound film, and a transparent conductive oxide film,the metal film is made of at least one kind of metal selected from the group consisting of Cu, Al, Ag, Mo, W, and Ta,the intermetallic compound film is a film of an intermetallic compound including at least one kind of the metal,the transparent ...

PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME

A circuit layer is formed on a surface of a substrate and includes a transistor. A photoelectric conversion element includes a photoelectric conversion layer of a chalcopyrite-type semiconductor provided between a first electrode and a second electrode. A supply layer is formed between the circuit layer and the photoelectric conversion layer and contains an Ia group element. Diffusion of the Ia group element to the photoelectric conversion layer improves the photoelectric conversion efficiency. A protective layer is formed between the supply layer and the circuit layer and prevents the diffusion of the Ia group element to the circuit layer. 1. A method for manufacturing a photoelectric conversion device comprising:forming on a circuit layer including a semiconductor element on a substrate;forming a protective layer on the circuit layer to prevent diffusion of an Ia group element to the circuit layer;forming a supply layer containing the Ia group element on the protective layer;forming a first electrode that contacts the circuit layer, the first electrode extending through the protective layer and the supply layer; andforming a photoelectric conversion layer of a chalcopyrite-type semiconductor on the supply layer, the first electrode contacting the photoelectric conversion layer and the circuit layer.2. The method for manufacturing a photoelectric conversion device according to claim 1 ,wherein in the forming a protective layer, the protective layer is formed from a silicon nitride, andin the forming a supply layer, the supply layer is formed from a silicon oxide.3. The method for manufacturing a photoelectric conversion device according to claim 1 ,wherein the forming a supply layer includes:forming a base layer on the protective layer; anddiffusing the Ia group element to the base layer by a plasma treatment using an inert gas supplied through a shower plate to which the Ia group element is adhered.4. The method for manufacturing a photoelectric conversion device ...

METHOD OF MAKING PHOTOVOLTAIC DEVICES INCORPORATING IMPROVED PNICTIDE SEMICONDUCTOR FILMS

The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication. 1. A method of making a photovoltaic device , comprising the steps of:a. providing a pnictide semiconductor film comprising at least one pnictide semiconductor comprising zinc and phosphorous, said film having a surface; i. contacting the film with a first etching composition in a manner effective to form a phosphorus-rich region on the surface of the film; and', 'ii. in the presence of an oxidizing agent, removing at least a portion of the phosphorus-rich region using a second etching composition that selectively etches the phosphorus-rich region or a derivative thereof relative to the pnictide semiconductor film., 'b. treating the film, said treating comprising the steps of23-. (canceled)4. The method of claim 1 , wherein the removing step removes a derivative of the phosphorus-rich region claim 1 , said derivative comprising an oxide of a pnictogen.5. The method of claim 1 , wherein the phosphorus-rich region is at least partially amorphous.6. The method of claim 1 , further comprising the step of incorporating the pnictide film into a photovoltaic device.7. The method of claim 1 , wherein the first and second etching compositions are different.8. (canceled)9. The method of claim 1 , wherein the second etching composition is a fluid admixture that comprises at least ...

ELECTRIC POTENTIALLY-DRIVEN SHADE WITH CIGS SOLAR CELL, AND/OR METHOD OF MAKING THE SAME

Certain example embodiments relate to electric, potentially-driven shades usable with insulating glass (IG) units, IG units including such shades, and/or associated methods. In such a unit, a dynamic shade is located between the substrates defining the IG unit, and is movable between retracted and extended positions. The dynamic shade includes on-glass layers including a transparent conductor and an insulator or dielectric film, as well as a shutter. The shutter includes a resilient polymer, a conductor, and optional ink. Holes, invisible to the naked eye, may be formed in the polymer. When the conductor is reflective, overcoat layers may be provided to help reduce internal reflection. The polymer may be capable of surviving high-temperature environments and may be colored in some instances. The shade, when extended, may be used as a solar collector in some instances. 1. An insulating glass (IG) unit , comprising:first and second substrates, each having interior and exterior major surfaces, the interior major surface of the first substrate facing the interior major surface of the second substrate;a spacer system helping to maintain the first and second substrates in substantially parallel spaced apart relation to one another and to define a gap therebetween; and a first conductive coating provided, directly or indirectly, on the interior major surface of the first substrate;', 'a dielectric or insulator film provided, directly or indirectly, on the first conductive coating; and', 'a shutter including a polymer substrate supporting, in order moving away from the polymer substrate, a second conductive coating, a CIGS absorber, a third conductive coating, and an upper contact layer, wherein the polymer substrate is extendible to serve as a shutter closed position and retractable to serve a shutter open position; and, 'a dynamically controllable shade interposed between the first and second substrates, the shade includingwherein the first and second conductive coatings ...

TWO-TERMINAL ELECTRONIC DEVICES AND THEIR METHODS OF FABRICATION

Two-terminal electronic devices, such as photodetectors, photovoltaic devices and electroluminescent devices, are provided. The devices include a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal; an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal of the first electrode; a semiconductor layer, preferably comprising a p-type semiconductor, residing over the I-layer; and a second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material. The band gap of the material of the semiconductor layer, is preferably smaller than the band gap of the I-layer material. The band gap of the material of the I-layer is preferably greater than 2.5 eV. 1. A two terminal device comprising:a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal or metal alloy;an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal or metal alloy of the first electrode;a semiconductor layer residing over the I-layer; anda second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material.2. The two terminal device of claim 1 , wherein the semiconductor layer comprises an organic and/or an organometallic material.3. The two terminal device of claim 1 , wherein the semiconductor layer comprises a p-type inorganic material.4. The two terminal device of claim 1 , wherein the device is a photovoltaic and/ora photoconductor device, and wherein the semiconductor layer is capable of absorbing electromagnetic radiation in at ...

Reaction apparatus and method for manufacturing a cigs absorber of a thin film solar cell

The present invention provides an apparatus and a method for manufacturing a CIGS absorber of a thin film solar cell. The apparatus includes a supply chamber configured to provide a flexible substrate coated with precursors. The apparatus further includes a reaction chamber coupled to the supply chamber for at least subjecting the precursors on the flexible substrate to a reactive gas at a first state to form an absorber material. Additionally, the apparatus includes a gas-balancing chamber filled with the reactive gas at a second state. The gas-balancing chamber is communicated with the reaction chamber for automatically updating the first state of the reactive gas to the second state. Moreover, the apparatus includes a control system to maintain the second state of the reactive gas in the gas-balancing chamber at a preset condition and to adjust the transportation of the flexible substrate through the reaction chamber.