ELIMINATION OF ODORS FROM ORGANIC WASTES

A method and solution are provided for reducing air-polluting odors emanating from organic waste products produced by metabolic processes and from organic industrial waste including effluents. The method comprises contacting said wastes with an aqueous acid solution containing a water-soluble oxidizing agent selected from the group consisting of nitrates, chlorates and permanganates of ammonia and alkali metals, and also a precipitating agent selected from the group consisting of water soluble ferric and ferrous compounds.

Alzheimer hastalığının tedavi yöntemi.

Semiconductor and its producing method

Recombinant BCG overexpressing phoP-phoR

Provided are a live recombinant Mycobacterium bovis-BCG strain and a tuberculosis (TB) vaccine or immunogenic composition comprising a nucleic acid capable of overexpression, the nucleic acid encoding PhoP and PhoR proteins. A method for treatment or prophylaxis of a mammal against challenge by Mycobacterium tuberculosis or Mycobacterium bovis using the strain is also provided.

Method for fabricating semiconductor device

A TFT having stable characteristics is obtained by using a crystal silicon film obtained by crystallizing an amorphous silicon film by using nickel. Phosphorus ions are implanted to regions 111 and 112 by using a mask 109. Then, a heat treatment is performed to getter nickel existing in a region 113 to the regions 111 and 112. Then, the mask 109 is side-etched to obtain a pattern 115. Then, the regions 111 and 112 are removed by utilizing the pattern 115 and to pattern the region 113. Thus, a region 116 from which nickel element has been removed is obtained. The TFT is fabricated by using the region 116 as an active layer.

Electronic circuit

Organic compound, liquid crystal composition, liquid crystal element, and liquid crystal display device

A novel organic compound that can be used in a variety of liquid crystal devices or a liquid crystal composition containing the novel organic compound is provided. An organic compound represented by General Formula (G1) is provided. A novel liquid crystal composition containing the organic compound is provided. In General Formula (G1), Ar1and Ar2separately represent a substituted or unsubstituted arylene group having 6 to 12 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 12 carbon atoms, or a substituted or unsubstituted cycloalkenylene group having 3 to 12 carbon atoms. In addition, m and n separately represent 0 or 1. R1and R2separately represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 11 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 11 carbon atoms.

Method for manufacturing a display device

A device-forming region where a semiconductor device is formed is arranged on a substrate in the matrix of 2x2. A linear laser beam has a cross-section having a length longer than the width of the device-forming region. When the irradiation of the laser beam is performed, the region irradiated with the end portions of the linear laser beams overlapped with each other or brought into contact with each other, is made positioned outside the device-forming region.

SEMICONDUCTOR DEVICE

In a transistor including an oxide semiconductor, hydrogen in the oxide semiconductor leads to degradation of electric characteristics of the transistor. Thus, an object is to provide a semiconductor device having good electrical characteristics. An insulating layer in contact with an oxide semiconductor layer where a channel region is formed is formed by a plasma CVD method using a silicon halide. The insulating layer thus formed has a hydrogen concentration less than 6×10atoms/cmand a halogen concentration greater than or equal to 1×10atoms/cm; accordingly, hydrogen diffusion into the oxide semiconductor layer can be prevented and hydrogen in the oxide semiconductor layer is inactivated or released from the oxide semiconductor layer by the halogen, whereby a semiconductor device having good electrical characteristics can be provided. 1. A semiconductor device comprising:an insulating layer;an oxide semiconductor layer on the insulating layer;a gate insulating layer over the oxide semiconductor layer, a part of the gate insulating layer is in contact with the oxide semiconductor layer; anda gate electrode layer over the gate insulating layer,{'sup': 20', '3', '20', '3, 'wherein a hydrogen concentration in the insulating layer is less than 6×10atoms/cmand a halogen concentration in the insulating layer is greater than or equal to 1×10atoms/cm.'}2. The semiconductor device according to claim 1 , wherein the insulating layer is an oxide insulating layer.3. The semiconductor device according to claim 1 , wherein the gate insulating layer comprises silicon oxide claim 1 , silicon oxynitride claim 1 , silicon nitride oxide claim 1 , hafnium oxide claim 1 , aluminum oxide claim 1 , or tantalum oxide.4. The semiconductor device according to claim 1 , wherein a thickness of the insulating layer is five or more times as thick as a total thickness of the oxide semiconductor layer and the gate insulating layer.5. The semiconductor device according to claim 1 , wherein the ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor layer formed over an insulating layer, a source electrode layer and a drain electrode layer which overlap with part of the oxide semiconductor layer, a gate insulating layer in contact with part of the oxide semiconductor layer, and a gate electrode layer over the gate insulating layer. In the transistor, a buffer layer having n-type conductivity is formed between the source electrode layer and the oxide semiconductor layer and between the drain electrode layer and the oxide semiconductor layer. Thus, parasitic resistance is reduced, resulting in improvement of on-state characteristics of the transistor. 1. A semiconductor device comprising:an oxide semiconductor layer formed over an insulating layer;a source electrode layer and a drain electrode layer over the oxide semiconductor layer;a gate insulating layer over the source electrode layer and the drain electrode layer, the gate insulating layer being in contact with the oxide semiconductor layer; anda gate electrode layer over the gate insulating layer, the gate electrode layer overlapping with the oxide semiconductor layer,wherein a buffer layer having n-type conductivity is formed between the source electrode layer and the oxide semiconductor layer and between the drain electrode layer and the oxide semiconductor layer.2. The semiconductor device according to claim 1 , wherein each of the source electrode layer and the drain electrode layer is any of a single film claim 1 , an alloy film claim 1 , and a layered film including any of the single film and the alloy film.3. The semiconductor device according to claim 2 , wherein each of the single film and the alloy film comprises an element selected from aluminum claim 2 , chromium claim 2 , copper claim 2 , tantalum claim 2 , titanium claim 2 , molybdenum claim 2 , and tungsten.4. The semiconductor device ...

SEMICONDUCTOR DEVICE

An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and improved reliability. In a transistor including an oxide semiconductor film, insulating films each including a material containing a Group 13 element and oxygen are formed in contact with the oxide semiconductor film, whereby the interfaces with the oxide semiconductor film can be kept in a favorable state. Further, the insulating films each include a region where the proportion of oxygen is higher than that in the stoichiometric composition, so that oxygen is supplied to the oxide semiconductor film; thus, oxygen defects in the oxide semiconductor film can be reduced. Furthermore, the insulating films in contact with the oxide semiconductor film each have a stacked structure so that films each containing aluminum are provided over and under the oxide semiconductor film, whereby entry of water into the oxide semiconductor film can be prevented. 1. A semiconductor device comprising:a gate electrode;a gate insulating film covering the gate electrode and having a stacked structure including a first metal oxide film and a second metal oxide film;an oxide semiconductor film in contact with the second metal oxide film and in a region overlapping with the gate electrode;a third metal oxide film on and in contact with the oxide semiconductor film; anda fourth metal oxide film on and in contact with the third metal oxide film,wherein the first metal oxide film, the second metal oxide film, the third metal oxide film, and the fourth metal oxide film each contain a Group 13 element and oxygen.2. The semiconductor device according to claim 1 , further comprising a conductive layer over the fourth metal oxide film and in a region overlapping with the oxide semiconductor film.3. The semiconductor device according to claim 1 , wherein the second metal oxide film and the third metal oxide film are at least partly in contact with each other.4. The ...

THIN FILM TRANSISTOR

A thin film transistor with favorable electric characteristics is provided. The thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor layer which includes a microcrystalline semiconductor region and an amorphous semiconductor region, an impurity semiconductor layer, a wiring, a first oxide region provided between the microcrystalline semiconductor region and the wiring, and a second oxide region provided between the amorphous semiconductor region and the wiring. wherein a line tangent to the highest inclination of an oxygen profile in the first oxide region (m1) and a line tangent to the highest inclination of an oxygen profile in the second oxide region (m2) satisfy a relation of 1 Подробнее

SEMICONDUCTOR DEVICE

It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×10atoms/cmor lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum. 1. A semiconductor device comprising:a gate insulating layer;a first gate electrode in contact with one surface of the gate insulating layer;an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; anda source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer,{'sup': 19', '3, 'wherein a nitrogen concentration of the oxide semiconductor layer is 2×10atoms/cmor lower, and'}wherein the source electrode and the drain electrode include at least one of tungsten, platinum, and molybdenum.2. The semiconductor device according to claim 1 , wherein the gate insulating layer includes at least one of gallium oxide claim 1 , aluminum oxide claim 1 , gallium aluminum oxide claim 1 , and aluminum gallium oxide.3. The semiconductor device according to claim 1 , wherein the oxide insulating layer includes at least one of gallium oxide claim 1 , aluminum oxide claim 1 , gallium aluminum oxide claim 1 , and aluminum gallium oxide.4. The semiconductor device according to claim 1 , wherein a thickness of the oxide semiconductor layer is greater than or equal to ...

LAYER HAVING FUNCTIONALITY, METHOD FOR FORMING FLEXIBLE SUBSTRATE HAVING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality. 1. A semiconductor device comprising:a circuit including a transistor;a first flexible substrate;a conductive layer formed on the first flexible substrate, wherein the transistor is electrically connected to the conductive layer through an opening of the first flexible substrate; anda second flexible substrate, wherein the circuit is interposed between the first flexible substrate and the second flexible substrate, and the first flexible substrate is located between the conductive layer and the circuit.2. The semiconductor device according to wherein the transistor is a thin film transistor.3. The semiconductor device according to wherein the conductive layer functions as an antenna.4. The semiconductor device according to wherein the second flexible substrate is in contact with the first flexible substrate.5. The semiconductor device according to claim 1 , further comprising a third flexible substrate between the second flexible substrate and the circuit.6. The semiconductor device according to claim 1 , ...

Electronic Device

There is provided an electronic device in which the deterioration of the device is prevented and an aperture ratio is improved without using a black mask and without increasing the number of masks. In the electronic device, a first electrode () is disposed on another layer different from the layer on which a gate wiring () is disposed as a gate electrode, and a semiconductor layer of a pixel switching TFT is superimposed on the gate wiring () so as to be shielded from a light. Thus, the deterioration of the TFT is suppressed, and a high aperture ratio is realized. 1. An electronic device comprising:a first substrate; [ a first gate electrically connected to a first gate wiring;', 'a first source; and', 'a first drain, wherein one of the first source and the first drain is electrically connected to a source wiring,, 'a first transistor comprising, a second gate;', 'a second source; and', 'a second drain, wherein one of the second source and the second drain is electrically connected to a current supply line,, 'a second transistor comprising, a first electrode electrically connected to one of the second source and the second drain; and', 'a second electrode connected to the second gate,, 'a capacitor comprising, 'a light emitting element electrically connected to the other one of the second source and the second drain;', a third gate electrically connected to a second gate wiring;', 'a third source; and', 'a third drain, wherein one of the third source and the third drain is electrically connected to the second gate,, 'a third transistor comprising], 'a pixel portion over the first substrate, and comprising a pixel comprisinga second substrate over the pixel portion;a first sealing material interposed between the first substrate and the second substrate, and surrounding the pixel portion; anda second sealing material formed outside of the first sealing material, wherein the second sealing material is in contact with an edge of the first substrate and an edge of the ...

Semiconductor device

An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR

In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film. 1. A semiconductor device comprising:a transistor;a storage capacitor;a pixel electrode; anda spacer,wherein the storage capacitor is formed by a light shielding film over the transistor, an insulating film over the light shielding film, and the pixel electrode over the insulating film,wherein the pixel electrode is connected to the transistor through an opening in the spacer, andwherein the spacer is provided on and in contact with the light shielding film.2. The semiconductor device according to claim 1 ,wherein the insulating film is a dielectric film.3. The semiconductor device according to claim 1 ,wherein the light shielding film comprises an element selected from a group consisting of aluminum, tantalum, and titanium, andwherein the insulating film comprises an oxide of the element of the light shielding film.4. The semiconductor device according to claim 1 ,wherein the transistor comprises a channel forming region and an LDD region.5. The semiconductor device according to claim 1 , further comprising a liquid crystal over the pixel electrode.6. A semiconductor device comprising:a transistor;a storage ...

INPUT/OUTPUT DEVICE AND DRIVING METHOD THEREOF

An object is to reduce power consumption. An input/output device including: a display selection signal output circuit outputting a display selection signal during a first display mode and stopping outputting the display selection signal during a second display mode; a photodetection reset signal output circuit outputting N (N is a natural number) photodetection reset signals during a first photodetection mode and outputting M (M is a natural number smaller than N) photodetection reset signals during a second photodetection mode; an output selection signal output circuit outputting N output selection signals during the first photodetection mode and outputting M output selection signals during the second photodetection mode; and a photodetector circuit being reset in accordance with a photodetection reset signal, generating data according to an intensity of light entering the photodetector circuit subsequently, and outputting the data as a data signal in accordance with the output selection signal. 1. A method for driving an input/output device comprising the steps of:performing a first photodetection;performing a second photodetection after the first photodetection;detecting an object closed to the input/output device by the second photodetection;performing a third photodetection after the second photodetection; andperforming a fourth photodetection after the third photodetection,wherein a time interval between the first photodetection and the second photodetection is longer than a time interval between the third photodetection and the fourth photodetection.2. The method for driving the input/output device according to claim 1 , further comprising the steps of:performing supply of a first image signal to the input/output device to display a first image;performing supply of a second image signal to the input/output device to display a second image after the supply of the first image signal;performing supply of a third image signal to the input/output device to display ...

METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE

In a field-sequential liquid crystal display device, image quality and detection accuracy in image capture are improved by increasing the frequency of input of image signals and securing a sufficient imaging period. Image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix. Further, image capture is concurrently performed in pixels provided in a plurality of rows among pixels arranged in matrix. Thus, the frequency of input of an image signal to each pixel of the liquid crystal display device can be increased and a sufficient imaging period can be secured. As a result, in the liquid crystal display device, display deterioration such as color break which is caused in a field-sequential liquid crystal display device can be suppressed and improvements in image quality and detection accuracy in image capture can be realized. 1. A method for driving a liquid crystal display device comprising first light sources , second light sources and a pixel portion , the pixel portion comprising display pixels in m rows and n columns and image-capture pixels in x rows and y columns (m , n , x and y are natural numbers of 4 or more) , comprising the steps of:performing first supply of an image signal of a first color for the display pixels in first to k-th rows sequentially (k is a natural number of less than m/2) in a first period;performing second supply of an image signal of the first color for the display pixels in (k+1)-th to 2k-th rows sequentially in the first period;emitting light of the first color through the display pixels in first to 2k-th rows after the first period;performing a first image capture in the image-capture pixels in first to z-th rows sequentially (z is a natural number of less than x/2) while emitting the light; andperforming a second image capture in the image-capture pixels in (z+1)-th to 2z-th rows sequentially while emitting the light,wherein the first supply and the second supply are performed ...

DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE

An object is to provide a driving method of a liquid crystal display device with a low power consumption and a high image quality. A pixel includes a liquid crystal element and a transistor which controls supply of an image signal to the liquid crystal element. The transistor includes, in a channel formation region, a semiconductor which has a wider band gap than a silicon semiconductor and has a lower intrinsic carrier density than silicon, and has an extremely low off-state current. In inversion driving of pixels, image signals having opposite polarities are input to a pair of signal lines between which a pixel electrode is disposed. By employing such a structure, the quality of the displayed image can be increased even in the absence of a capacitor in the pixel. 1. A driving method of a liquid crystal display device comprising a plurality of pixels and a plurality of signal lines , the driving method comprising a step of:inverting a polarity of an image signal, which is input to the plurality of pixels from the plurality of signal lines, every one frame period,wherein, in each frame period, the polarity of the image signal is different between any two pixels which are adjacent to each other with one of the plurality of signal lines positioned therebetween,wherein each of the plurality of pixels comprises a liquid crystal element comprising a pixel electrode and a transistor comprising a first terminal and a second terminal, andwherein the transistor comprises a semiconductor having a wider band gap than a silicon semiconductor.2. The driving method according to claim 1 ,wherein the semiconductor has an intrinsic carrier density lower than that of the silicon semiconductor.3. The driving method according to claim 1 ,wherein the semiconductor is an oxide semiconductor.4. The driving method according to claim 1 ,wherein the semiconductor is an oxide semiconductor comprising zinc.5. The driving method according to claim 1 ,wherein the semiconductor is an oxide ...

ELECTRIC FIELD DRIVING DISPLAY DEVICE

It is an object to provide an electric field driving display device capable of displaying a high quality image and to provide an electric field driving display device in which residual images in an outline of a pixel is prevented from occurring. An insulating film is formed over a second electrode and a plurality of first electrodes are provided over the insulating film. Each of the first electrodes is electrically connected to the second electrode. The second electrode is provided to partly overlap a region between the adjacent two first electrodes. In other words, viewing the top and the bottom of the display device, the adjacent first electrodes are provided apart from each other and the second electrode is provided to embed a space between the adjacent first electrodes. 1. An electric field driving display device comprising:a first electrode over a substrate;a second electrode over the substrate;an insulating film over the first electrode and the second electrode;a third electrode over the insulating film, the third electrode being electrically connected to the first electrode;a fourth electrode over the insulating film, the fourth electrode being electrically connected to the second electrode;a layer comprising a charged particle, over the insulating film, the third electrode and the fourth electrode; anda fifth electrode over the layer comprising the charged particle,wherein the third electrode overlaps with a first region of a face of the insulating film,wherein the fourth electrode overlaps with a second region of the face of the insulating film, andwherein a third region between the first region and the second region of the face of the insulating film overlaps with at least part of the first electrode.2. The electric field driving display device according to claim 1 ,wherein each of the first electrode and the second electrode is an auxiliary electrode, andwherein each of the third electrode and the fourth electrode is a pixel electrode.3. The electric ...

METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE

In a first subframe period, light sources of a first region and a third region emit lights at the same time; light sources of a second region and a fourth region emit no light at the same time, in which light emission of different colors is performed in the first region and the third region. In a second subframe period, light sources of the second region and the fourth region emit lights at the same time; light sources of the first region and the third region emit no light at the same time, in which light emission of different colors is performed in the second region and the fourth region. The first region and the third region are separated from each other with the second region interposed therebetween; and the second region and the fourth region are separated from each other with the third region interposed therebetween. 1. A method for driving a liquid crystal display device comprising a backlight portion having a light source region divided into a first region , a second region , a third region , and a fourth region; and a pixel portion which is divided into a first pixel region , a second pixel region , a third pixel region , and a fourth pixel region corresponding to the first region , the second region , the third region , and the fourth region , respectively , wherein the liquid crystal display device is displayed by a field sequential method , and wherein one-frame period comprises a plurality of subframe periods including a first subframe period and a second subframe period , comprising the steps of:in the first subframe period, performing light emission at the same time in the first region and in the third region; performing non-light emission at the same time in the second region and in the fourth region, wherein a color of light emission in the first region is different from a color of light emission in the third region; andin the second subframe period, performing light emission at the same time in the second region and in the fourth region; performing ...

LIQUID CRYSTAL DISPLAY DEVICE

A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order. 1. A liquid crystal display device comprising a backlight and a pixel portion ,wherein the backlight includes a first light source configured to emit a first hue, a second light source configured to emit a second hue, and a third light source configured to emit a third hue,wherein the pixel portion comprises a first region including first to n-th scan lines and a second region including (n+1)-th to 2n-th scan lines,wherein each of the first region and the second region comprises a plurality of pixels each including a transparent pixel electrode and a reflective pixel electrode,wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of the first hue, the second hue, and the third hue sequentially supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first hue, the second hue, and the third hue sequentially supplied in a second rotating order,wherein, in a second case of expressing a monochrome image, the ...

LIQUID CRYSTAL DISPLAY DEVICE

The liquid crystal display device includes a pixel portion including first and second regions and light sources. The first and second regions each include a liquid crystal element whose transmissivity is controlled in accordance with a voltage of an image signal and a transistor for controlling holding of the voltage, whose off-state current is extremely low. The light sources perform first and second drivings: lights whose hues are different from each other are sequentially supplied to the first region in a first rotating order and the lights are sequentially supplied to the second region in a second rotating order which is different from the first rotating order in the first driving; and a light having a single hue is supplied consecutively to one or both of the first and second regions in the second driving. The period for holding the voltage is different between the first and second drivings. 1. A liquid crystal display device comprising:a pixel portion including a first region and a second region; anda plurality of light sources,wherein each of the first region and the second region includes a liquid crystal element whose transmissivity is controlled in accordance with a voltage of an image signal and a transistor for controlling holding of the voltage,wherein a channel formation region of the transistor contains a semiconductor material whose bandgap is wider than a bandgap of a silicon semiconductor and whose intrinsic carrier density is lower than an intrinsic carrier density of the silicon semiconductor,wherein the plurality of light sources are configured to perform a first driving and a second driving,wherein a plurality of lights whose hues are different from each other are sequentially supplied to the first region in a first rotating order and the plurality of lights whose hues are different from each other are sequentially supplied to the second region in a second rotating order which is different from the first rotating order in the first driving, ...

SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DISPLAY DEVICE

An object is to provide a solid-state imaging device or a semiconductor display device with which a high-quality image can be taken. By performing operation using a global shutter method, a potential for controlling charge accumulation operation can be shared by all pixels. In addition, a first photosensor group includes a plurality of photosensors connected to a wiring supplied with an output signal, and a second photosensor group includes a plurality of photosensors connected to another wiring supplied with the output signal. A wiring for supplying a potential or a signal for controlling charge accumulation operation to the first photosensor group is connected to a wiring for supplying the potential or signal to the second photosensor group. 1. A solid-state imaging device comprising:a plurality of pixels, each of the plurality of pixels comprising:a photodiode configured to generate current; andan amplifier circuit configured to amplify an amount of charge determined by a value of current, thereby generating an output signal,wherein the amplifier circuit comprises a transistor configured to hold the amount of charge determined by the value of current,wherein one of a source and a drain of the transistor is electrically connected to the photodiode,wherein the plurality of pixels comprise a first plurality of pixels connected to a first wiring supplied with a first output signal, and a second plurality of pixels connected to a second wiring supplied with a second output signal,wherein the value of current is determined by an intensity of irradiation light, andwherein a third wiring for supplying a potential to the first plurality of pixels for controlling accumulation of first charge is connected to a fourth wiring for supplying the potential to the second plurality of pixels.2. The solid-state imaging device according to claim 1 , wherein the transistor comprises claim 1 , in a channel formation region claim 1 , a semiconductor material having a wider band gap ...

LIQUID CRYSTAL DISPLAY DEVICE

An object is to provide a liquid crystal display device capable of image display according to an environment around the liquid crystal display device, e.g., in a bright environment or a dim environment. Another object is to provide a liquid crystal display device capable of displaying an image in both modes of a reflective mode in which external light is used as a light source and a transmissive mode in which a backlight is used. In order to achieve at least one of the above objects, a liquid crystal display device is provided with a region (a reflective region) where display is performed with reflection of incident light through a liquid crystal layer and a region (a transmissive region) where display is performed with transmission of light from a backlight and can switch the transmissive mode and the reflective mode. In the case where a full-color image is displayed, a pixel portion includes at least a first region and a second region, a plurality of lights of different hues are sequentially supplied to the first region according to a first order, and a plurality of lights of different hues are also sequentially supplied to the second region according to a second order which is different from the first order. 1. A liquid crystal display device comprising:a plurality of light sources emitting a plurality of lights; and a first pixel electrode having a light-transmitting property; and', 'a second pixel electrode which is a reflective electrode and placed adjacently to the first pixel electrode,, 'a pixel portion, the pixel portion comprisingwherein the first pixel electrode is electrically connected to a first transistor and the second pixel electrode is electrically connected to a second transistor,wherein the pixel portion is divided into a plurality of regions,wherein color display is performed by controlling the plurality of lights whose hues are different per the plurality of regions and applying a voltage to a first region of the liquid crystal layer ...

DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE

Disclosed is a field-sequential liquid crystal display device having a plurality of pixels each of which is arranged to sequentially transmit light obtained by mixing at least two lights in addition to lights of three primary colors generated by a plurality of light sources. 1. A driving method of a liquid crystal display device , the driving method comprising the steps of:irradiating a first pixel, a second pixel, and a third pixel with first light, second light, and third light, respectively, which are generated in a first backlight unit, a second backlight unit, and a third backlight unit, respectively, in a first period;irradiating the first pixel, the second pixel, and the third pixel with fourth light, the first light, and the second light, respectively, which are generated in the first backlight unit, the second backlight unit, and the third backlight unit, respectively, in a second period;irradiating the first pixel, the second pixel, and the third pixel with fifth light, the fourth light, and the first light, respectively, which are generated in the first backlight unit, the second backlight unit, and the third backlight unit, respectively, in a third period;irradiating the first pixel, the second pixel, and the third pixel with sixth light, the fifth light, and the fourth light, respectively, which are generated in the first backlight unit, the second backlight unit, and the third backlight unit, respectively, in a fourth period;irradiating the first pixel, the second pixel, and the third pixel with the third light, the sixth light, and the fifth light, respectively, which are generated in the first backlight unit, the second backlight unit, and the third backlight unit, respectively, in a fifth period; andirradiating the first pixel, the second pixel, and the third pixel with the second light, the third light, and the sixth light, respectively, which are generated in the first backlight unit, the second backlight unit, and the third backlight unit, ...

LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE

An object of the invention is to suppress degradation in image quality of a liquid crystal display device which performs display by field sequential method and to reduce power consumption of a backlight. The highest brightness of a first color light in a pixel region is detected. Gamma correction is performed so that transmittance of a pixel of the region displaying the highest brightness of the first color light is set to maximum and transmittance of other pixel of the region is decreased in accordance with lowering of the first color light intensity, and the region is irradiated with the highest brightness of the first color light. Similarly, a second color light is irradiated in another region concurrently with irradiation of the first color, whereby input of an image signal and lighting of the backlight are performed simultaneously in every region of the pixel portion. 1. A liquid crystal display device comprising a liquid crystal panel and an image processing circuit , the image processing circuit comprising:a frame memory configured to store at least data of an image to be displayed by the liquid crystal panel; and a first maximum value detection sub-circuit configured to detect a maximum brightness of a first color tone in a first region of the image; and', 'a second maximum value detection sub-circuit configured to detect a maximum brightness of a second color tone in a second region of the image., 'a maximum value detection circuit functionally connected to the frame memory, and comprising2. A liquid crystal display device according to claim 1 , the image processing circuit further comprising a gamma correction circuit claim 1 , the gamma correction circuit comprising:a first gamma correction sub-circuit electrically connected to the first maximum value detection sub-circuit and to the liquid crystal panel, and configured to perform gamma correction on data of the first region of the image in accordance with the maximum brightness of the first color tone ...

ELECTRIC DOUBLE LAYER CAPACITOR, LITHIUM ION CAPACITOR AND MANUFACTURING METHOD THEREOF

A thin energy storage device having high capacity is obtained. An energy storage device having high output is obtained. A current collector and an active material layer are formed in the same manufacturing step. The number of manufacturing steps of an energy storage device is reduced. The manufacturing cost of an energy storage device is suppressed. One embodiment of the present invention relates to an electric double layer capacitor which includes a pair of electrodes including a porous metal material, and an electrolyte provided between the pair of electrodes; or a lithium ion capacitor which includes a positive electrode that is a porous metal body functioning as a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and an electrolyte provided between the positive electrode and the negative electrode. 1. An electric double layer capacitor comprising:a pair of electrodes, at least one comprising a porous metal material; andan electrolyte provided between the pair of electrodes.2. The electric double layer capacitor according to claim 1 ,wherein the electrode is a metal foil or a metal plate.3. An electric double layer capacitor comprising:a pair of electrodes, at least one comprising a porous metal material; andan electrolyte provided between the pair of electrodes,{'sup': 2', '3, 'wherein a surface area per volume of the porous metal material is greater than or equal to 100 m/cm.'}4. The electric double layer capacitor according to claim 3 ,wherein the electrode is a metal foil or a metal plate.5. An electric double layer capacitor comprising:a pair of electrodes , at least one comprising a porous metal material; andan electrolyte provided between the pair of electrodes,wherein the porous metal material comprises at least one of copper (Cu), silver (Ag), platinum (Pt), gold (Au), chromium (Cr), iron (Fe), lead (Pb ...

POWER STORAGE DEVICE, LITHIUM-ION SECONDARY BATTERY, ELECTRIC DOUBLE LAYER CAPACITOR AND LITHIUM-ION CAPACITOR

One object is to provide a power storage device including an electrolyte using a room-temperature ionic liquid which includes a univalent anion and a cyclic quaternary ammonium cation having excellent reduction resistance. Another object is to provide a high-performance power storage device. A room-temperature ionic liquid which includes a cyclic quaternary ammonium cation represented by a general formula (G1) below is used for an electrolyte of a power storage device. In the general formula (G1), one or two of Rto Rare any of an alkyl group having 1 to 20 carbon atoms, a methoxy group, a methoxymethyl group, and a methoxyethyl group. The other three or four of Rto Rare hydrogen atoms. A is a univalent imide anion, a univalent methide anion, a perfluoroalkyl sulfonic acid anion, tetrafluoroborate (BF), or hexafluorophosphate (PF). 2. The power storage device according to claim 1 ,wherein the number of the alkyl group is 1 to 4.3. The power storage device according to claim 1 ,{'sup': −', '−', '−', '−, 'sub': n', '2n+1', '2', '2', 'm', '2m+1', '3', '2', '2', '2', '2, 'wherein the A in the room-temperature ionic liquid is any one of univalent anion selected from (CFSO)N (n=0 to 4), (CFSO) (m=0 to 4), and CF(CFSO)N.'}4. A lithium-ion secondary battery comprising:a positive electrode, a negative electrode, a separator, and an electrolyte salt,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein the lithium-ion secondary battery is the power storage device according to , and'}wherein the electrolyte salt includes a lithium ion.5. An electric double layer capacitor comprising:a positive electrode, a negative electrode, and a separator,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein the electric double layer capacitor is the power storage device according to .'}6. A lithium-ion capacitor comprising claim 1 ,a positive electrode, a negative electrode, a separator, and an electrolyte salt,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein the lithium ...

METHOD FOR MANUFACTURING POWER STORAGE DEVICE

It is an object to provide a material for an electrode with improved electron conductivity and a power storage device using the material for an electrode. In a process for manufacturing a material for an electrode including a lithium phosphate compound represented by a general formula LiMPOhaving an olivine structure or a lithium silicate compound represented by a general formula LiMSiOhaving an olivine structure, a metal element having a valence different from that of a metal element represented by M is added. The metal element having a different valence serves as a carrier generation source in the material for an electrode, whereby the electron conductivity of the material for an electrode is improved. By using the material for an electrode with improved electron conductivity as a positive electrode active material, a power storage device with larger discharge capacity is provided. 1. A method for manufacturing a power storage device , comprising the steps of:mixing a compound containing lithium, a compound containing a first metal element selected from the group consisting of manganese, iron, cobalt, and nickel, a compound containing phosphorus, and a compound containing a second metal element having a valence different from that of the first metal element to form a mixture material; andbaking the mixture material to form a lithium phosphate compound containing the first metal element.2. The method for manufacturing a power storage device according to claim 1 , wherein the step of baking the mixture material comprises a first baking in which heat treatment is performed at a temperature of greater than or equal to 300° C. and less than or equal to 400° C. and a second baking in which heat treatment is performed at a temperature of greater than or equal to 500° C. and less than or equal to 800° C.3. The method for manufacturing a power storage device according to claim 1 , wherein the valence of the second metal element is 1 or 2 larger than that of the first metal ...

MANUFACTURING METHOD OF ENERGY STORAGE DEVICE

A manufacturing method of an energy storage device capable of increasing the discharge capacity or an energy storage device capable of suppression of degradation of an electrode due to repetitive charge and discharge is provided. In the manufacturing method, a crystalline silicon layer including a group of whiskers in which the whiskers are tightly formed is formed as an active material layer over a current collector by a low pressure chemical vapor deposition method using a gas containing silicon as a source gas and nitrogen or helium as a dilution gas. 1. A manufacturing method of an energy storage device , comprising:forming a crystalline silicon layer including a group of whiskers over a current collector by a low pressure chemical vapor deposition method using nitrogen and a gas containing silicon.2. The manufacturing method of an energy storage device according to claim 1 ,wherein a flow rate of the gas containing silicon is greater than or equal to 100 sccm and less than or equal to 3000 sccm, andwherein a flow rate of the nitrogen is greater than or equal to 100 sccm and less than or equal to 1000 sccm.3. The manufacturing method of an energy storage device according to claim 1 ,wherein the gas containing silicon includes silicon hydride, silicon fluoride, or silicon chloride.4. The manufacturing method of an energy storage device according to claim 1 ,wherein a heating temperature in the low pressure chemical vapor deposition method is higher than or equal to 595° C. and lower than 650° C.5. The manufacturing method of an energy storage device according to claim 1 ,wherein pressure in the low pressure chemical vapor deposition method is greater than or equal to 10 Pa and less than or equal to 100 Pa.6. The manufacturing method of an energy storage device according to claim 1 ,wherein the group of whiskers comprises a plurality of needle-like protrusions.7. The manufacturing method of an energy storage device according to claim 1 ,wherein the current ...

ELECTRODE MATERIAL AND METHOD FOR FORMING ELECTRODE MATERIAL

An object is to provide an electrode material with high electrical conductivity and a power storage device using the electrode material. An object is to provide an electrode material with high capacity and a power storage device using the electrode material. Provided is a particulate electrode material including a core containing a compound represented by a general formula LiMSiO(in the formula, M represents at least one kind of an element selected from Fe, Co, Mn, and Ni) as a main component, and a covering layer containing a compound represented by a general formula LiMPOas a main component and covering the core. Further, a solid solution material is provided between the core and the covering layer. With such a structure, an electrode material with high electrical conductivity can be obtained. Further, with such an electrode material, a power storage device with high discharge capacity can be obtained. 1. An electrode material comprising:{'sub': 2', '4, 'a core containing a compound represented by a general formula LiMSiO(in the general formula, M represents at least one kind of an element selected from Fe, Co, Mn, and Ni) as a main component; and'}{'sub': '4', 'a covering layer containing a compound represented by a general formula LiMPO(in the general formula, M represents at least one kind of an element selected from Fe, Co, Mn, and Ni) as a main component and covering the core.'}2. The electrode material according to claim 1 , wherein the compound represented by the general formula LiMPOhas high conductivity as compared to the compound represented by the general formula LiMSiO.3. The electrode material according to claim 1 , further comprising a carbon coat layer which covers the covering layer.4. The electrode material according to claim 3 , wherein the carbon coat layer has a thickness of greater than 0 nm and less than or equal to 100 nm.5. An electrode material comprising:{'sub': 2', '4, 'a core containing a compound represented by a general formula LiMSiO ...

MANUFACTURING METHOD OF POWER STORAGE DEVICE

It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized. 1. A power storage device comprising:a current collector; anda crystalline semiconductor layer including a whisker which is formed over the current collector,wherein a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90%.2. A power storage device according to claim 1 , wherein a surface treatment is performed on the current collector by using a material selected from the group consisting of a hydrofluoric acid claim 1 , a hydrochloric acid claim 1 , a sulfuric acid claim 1 , a mixed acid thereof claim 1 , NFplasma claim 1 , SiFplasma claim 1 , and ClFplasma.3. A power storage device according to claim 1 , wherein the power storage device is used in an electronic device selected from the group consisting of a digital camera claim 1 , a video camera claim 1 , a digital photo frame claim 1 , a mobile phone claim 1 , a portable game machine claim 1 , a portable information terminal claim 1 , an audio reproducing device claim 1 , a display device and a computer.4. A power storage device according to claim 1 , wherein the power storage device is used in an electric propulsion vehicle selected from the group consisting of an electric vehicle claim 1 , a hybrid vehicle claim 1 , an electric railway vehicle claim 1 , a ...

ENERGY STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

Provided are an energy storage device including an electrode in which lithium is introduced into a silicon layer and a method for manufacturing the energy storage device. A silicon layer is formed over a current collector, a solution including lithium is applied on the silicon layer, and heat treatment is performed thereon; thus, at least lithium can be introduced into the silicon layer. By using the solution including lithium, even when the silicon layer includes a plurality of silicon microparticles, the solution including lithium can enter a space between the microparticles and lithium can be introduced into the silicon microparticles which are in contact with the solution including lithium. Moreover, even when the silicon layer is a thin silicon film or includes a plurality of whiskers or whisker groups, the solution can be uniformly applied; accordingly, lithium can be included in silicon easily. 1. A method for manufacturing an energy storage device , comprising the steps of:forming a silicon layer over a current collector;applying a solution comprising lithium on the silicon layer; andperforming heat treatment, so that lithium is introduced into the silicon layer.2. The method for manufacturing an energy storage device claim 1 , according to claim 1 ,wherein the silicon layer comprises a plurality of whiskers of crystalline silicon.3. A method for manufacturing an energy storage device claim 1 , comprising the steps of:forming a silicon layer over a current collector;applying a liquid in which a particle comprising lithium is dispersed on the silicon layer; andperforming heat treatment, so that lithium is introduced into the silicon layer.4. The method for manufacturing an energy storage device claim 3 , according to claim 3 ,wherein the silicon layer comprises a plurality of whiskers of crystalline silicon.5. A method for manufacturing an energy storage device claim 3 , comprising the steps of:forming a silicon layer over a current collector;spraying a ...

POSITIVE ELECTRODE ACTIVE MATERIAL OF POWER STORAGE DEVICE, POSITIVE ELECTRODE OF POWER STORAGE DEVICE, POWER STORAGE DEVICE, MANUFACTURING METHOD OF POSITIVE ELECTRODE ACTIVE MATERIAL OF POWER STORAGE DEVICE

As a positive electrode active material, a material which is represented by the general formula LiM1M2SiOand satisfies the conditions (I) to (IV) is used: 1. A positive electrode active material of a power storage device , wherein the positive electrode active material is represented by a general formula LiM1M2SiOand satisfies conditions (I) to (IV):(I) x satisfies 0≦x<2 (x is greater than or equal to 0 and less than 2);(II) M1 is one or more metal atoms selected from iron (Fe), nickel (Ni), manganese (Mn), and cobalt (Co);(III) M2 is a metal atom that is titanium (Ti), scandium (Sc), or magnesium (Mg); and(IV) Formulae y+z≈1, 0 Подробнее

METHOD FOR MANUFACTURING ULTRA SMALL PARTICLE, POSITIVE ELECTRODE ACTIVE MATERIAL OF SECOND BATTERY USING THE METHOD FOR MANUFACTURING ULTRA SMALL PARTICLE AND METHOD FOR MANUFACTURING THE SAME, AND SECONDARY BATTERY USING THE POSITIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR MANUFACTURING THE SAME

An object is to form a positive electrode active material having small and highly uniform particles by a simple process. A template is formed by forming holes in the template by a nanoimprinting method, and the template is filled with a gel-like LiFePOmaterial, whereby small-sized LiFePOparticles are formed and are used as the positive electrode active material of a secondary battery. The particle size can be reduced to less than 50 nm. Further, when the LiFePOparticles are sintered, the template may be burned down. By making the particle size of the positive electrode active material smaller than the conventional one, a positive electrode that lithium is injected into and extracted from easily can be manufactured. 1. A method for manufacturing an ultra small particle comprising:forming a material film over a substrate;forming a hole in the material film;manufacturing a template including a hole; andfilling the hole in the template with a gel-like material.2. The method for manufacturing the ultra small particle according to claim 1 , wherein the hole in the material film is formed by a nanoimprinting method.3. The method for manufacturing the ultra small particle according to claim 1 , wherein the hole in the template is greater than or equal to 10 nm and less than or equal to 50 nm.4. The method for manufacturing the ultra small particle according to claim 1 , wherein the hole in the material film is formed so that the substrate is not exposed.5. The method for manufacturing the ultra small particle according to claim 1 , wherein the template including the hole is manufactured by exposing the material film with oxygen plasma.6. The method for manufacturing the ultra small particle according to claim 1 ,wherein the template including the hole is manufactured by forming a film over the material film and performing a lift-off process to the film, andwherein the film comprises one of the group consisting of aluminum, tungsten, and molybdenum.7. The method for ...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

An object is to provide a manufacturing method of a semiconductor device having a high field effect mobility and including an oxide semiconductor layer in a semiconductor device including an oxide semiconductor. Another object is to provide a manufacturing method of a semiconductor device capable of high speed operation. An oxide semiconductor layer is terminated by a halogen element, and thus an increase in the contact resistance between the oxide semiconductor layer and a conductive layer in contact with the oxide semiconductor layer is suppressed. Therefore, the contact resistance between the oxide semiconductor layer and the conductive layer becomes favorable and a transistor having a high field effect mobility can be manufactured. 1. A manufacturing method of a semiconductor device , comprising the steps of:forming an oxide semiconductor layer over a substrate;performing plasma treatment on the oxide semiconductor layer using a gas including a halogen element;forming a source electrode and a drain electrode over and in contact with the oxide semiconductor layer;forming a gate insulating layer over the source electrode and the drain electrode; andforming a gate electrode over the gate insulating layer.2. The manufacturing method of a semiconductor device according to claim 1 , wherein the oxide semiconductor layer has a carrier concentration of lower than 1×10cm.3. The manufacturing method of a semiconductor device according to claim 1 , wherein the gas including a halogen element used in the plasma treatment includes any one element of F claim 1 , Cl claim 1 , Br claim 1 , and I.4. The manufacturing method of a semiconductor device according to claim 1 , wherein the gas including a halogen element used in the plasma treatment is NF.5. The manufacturing method of a semiconductor device according to claim 1 , wherein the source electrode and the drain electrode in contact with the oxide semiconductor layer are formed using a metal including an element selected ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

When a transistor including a conductive layer having a three-layer structure is manufactured, three-stage etching is performed. In the first etching process, an etching method in which the etching rates for the second film and the third film are high is employed, and the first etching process is performed until the first film is at least exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. In the third etching process, an etching method in which the etching rates for the first to the third films are higher than those in the second etching process is preferably employed. 1. A method for manufacturing a semiconductor device comprising the steps of:forming a first wiring layer;forming an insulating layer to cover the first wiring layer;forming a semiconductor layer over the insulating layer;stacking a first conductive film, a second conductive film, and a third conductive in this order over the semiconductor layer; andperforming at least three-stage etching on the first to third conductive films to form a second wiring layer having a three-layer structure,wherein the three-stage etching comprises:a first etching process, which is performed until the first conductive film is exposed;a second etching process, which is performed under a condition that an etching rate for the first conductive film is higher than the etching rate in the first etching process and an etching rate for the semiconductor layer is lower than the etching rate in the first etching process; anda third etching process, which is performed under the condition that etching rates for the first to the third conductive films are higher than the etching rates in the second etching process.2. The method for manufacturing a semiconductor device according to claim 1 , ...

METHOD FOR FORMING SEMICONDUCTOR REGION AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE

To provide a method for manufacturing a power storage device which enables improvement in performance of the power storage device, such as an increase in discharge capacity. To provide a method for forming a semiconductor region which is used for a power storage device or the like so as to improve performance. A method for forming a crystalline semiconductor region includes the steps of: forming, over a conductive layer, a crystalline semiconductor region that includes a plurality of whiskers including a crystalline semiconductor by an LPCVD method; and performing heat treatment on the crystalline semiconductor region after supply of a source gas containing a deposition gas including silicon is stopped. A method for manufacturing a power storage device includes the step of using the crystalline semiconductor region as an active material layer of the power storage device. 1. A method for forming a semiconductor region , the method comprising the steps of:disposing in a reaction chamber a substrate having a conductive layer;forming a crystalline semiconductor region over the conductive layer by low pressure chemical vapor-phase deposition method using a source gas containing silicon, the crystalline semiconductor region including silicon whiskers; andperforming heat treatment on the crystalline semiconductor region to grow the silicon whiskers.2. A method for forming a semiconductor region according to claim 1 ,wherein the heat treatment is performed after that the supply of source gas used for forming the crystalline semiconductor region has been stopped.3. A method for forming a semiconductor region according to claim 1 ,wherein the conductive layer is formed with a metal forming silicide by reaction with silicon.4. A method for forming a semiconductor region according to claim 1 ,wherein the conductive layer comprises one of zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, cobalt, and nickel.5. A method for forming a ...

ANTHRACENE DERIVATIVE, MATERIAL FOR LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE

It is an object of the present invention to provide a novel material capable of realizing excellent color purity of blue, and a light emitting element and a light emitting device using the novel material. Further, it is an object of the present invention to provide which is highly reliable, and a light emitting element and a light emitting device using the novel material. The structure for solving the above problems in accordance with the present invention is an anthracene derivative simultaneously having a diphenylanthracene structure and a carbazole skeleton in a molecule as represented by structural formula (1): 3. The light emitting device according to claim 1 , wherein the dopant is selected from stilbene derivatives claim 1 , quinolone derivatives claim 1 , acridone derivatives claim 1 , anthracene derivatives claim 1 , pyrene derivatives claim 1 , and phenanthrene derivatives.4. The light emitting device according to claim 1 , wherein the dopant is selected from pyrene derivatives.5. The light emitting device according to claim 1 , further comprising an electron transporting layer between the light emitting layer and the second electrode claim 1 ,wherein the electron transporting layer comprises a bathophenanthroline derivative.6. The light emitting device according to claim 1 , further comprising a hole injecting layer over and in contact with the first electrode claim 1 ,wherein the hole injecting layer comprises a metal oxide selected from vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide.7. The light emitting device according to claim 1 , further comprising a hole injecting layer over and in contact with the first electrode claim 1 ,wherein the hole injecting layer comprises an organic compound and a metal oxide which is selected from vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide.8. The light emitting device according to claim 1 , wherein the second electrode is transparent.9. An electronic appliance having a ...

SEMICONDUCTOR DEVICE

It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10/° C. to 38×10/° C., preferably 6×10/° C. to 31.8×10/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step. 1. A semiconductor device comprising:a glass substrate;an insulating layer over the glass substrate;a semiconductor layer over the insulating layer;{'sub': 4', '2', '3', '2, 'wherein the insulating layer is formed by using a source gas of a mixture substantially selected from the group consisting of SiH, NO, NHand H.'}2. The semiconductor device according to claim 1 , wherein the insulating layer is a silicon nitride oxide layer.3. The semiconductor device according to claim 1 , wherein the insulating layer and the semiconductor layer are irradiated by a laser after a heating treatment.4. The semiconductor device according to claim 3 , wherein total stress of the insulating layer and the semiconductor layer is −500 N/m to +50 N/m after the heating treatment and before the irradiating treatment.5. The semiconductor device according to claim 3 , wherein the semiconductor layer has a melted region that extends down to the insulating layer by irradiating with the laser.6. An electronic apparatus having the semiconductor device according to .7. The electronic apparatus according to claim 6 , wherein the electronic apparatus is a portable information terminal claim 6 , a digital video camera claim 6 , a portable terminal claim 6 , a portable television ...

METHOD FOR MANUFACTURING DISPLAY DEVICE

A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion. 1. A semiconductor device comprising:a gate electrode and a first electrode on an insulating surface;a first insulating film over the gate electrode and the first electrode;a semiconductor layer over the first insulating film;a source region and a drain region over the semiconductor layer;a source electrode and a drain electrode over the source region or the drain region;a second insulating film over the source electrode and the drain electrode;an opening portion in the second insulating film; anda pixel electrode over the second insulating film,wherein the pixel electrode is connected to the drain electrode via the opening portion; andwherein the first electrode, the semiconductor layer and the drain region overlap with the opening portion of the second insulating film.2. The semiconductor device according to claim 1 ,wherein the gate electrode and the first electrode are electrically isolated.3. The semiconductor device according to claim 1 ,wherein the semiconductor layer overlaps with the gate electrode and the first electrode.4. The semiconductor device according to ...

Area Sensor and Display Apparatus Provided With An Area Sensor

An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

Method of manufacturing a semiconductor device

A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape.

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

This invention provides a semiconductor device having high operation performance and high reliability. An LDD region overlapping with a gate wiring is arranged in an n-channel TFT forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions and not overlapping with a gate wiring are arranged in an n-channel TFT forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region than in the LDD regions and 1. A display device comprising:a pixel unit comprising an EL cell,wherein a gate wiring which is provided in the pixel unit and includes a first region and a second region,wherein the gate wiring overlaps with an active layer of a transistor in the second region, andwherein the first region has a greater wiring width than the second region.2. The display device according to claim 1 ,wherein the gate wiring has a three-layered structure, andwherein the gate wiring is formed by laminating a first conductive film, a second conductive film, and a third conductive film.3. The display device according to claim 2 , wherein the gate wiring has a laminate structure of the first conductive film and the third conductive film in the second region.4. The display device according to claim 1 , wherein the display device is an EL display device.5. The display device according to claim 1 , wherein the active layer of the transistor comprises a polycrystalline silicon.6. An electric appliance device having the display device according to claim 1 , wherein the electric appliance device is one selected from the group consisting of a video camera claim 1 , a digital camera claim 1 , a projector claim 1 , a projection TV claim 1 , a goggle type display claim 1 , a head-mount display claim 1 , a navigation system claim 1 , an audio reproduction apparatus claim 1 , a notebook type ...

ID CHIP AND IC CARD

The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit. 1. A semiconductor device comprising:a conductive layer configured to generate an alternating voltage based on receiving a radio wave;a circuit comprising a transistor;a light-receiving element configured to receive a signal by optical communication; anda light-emitting element configured to transmit a signal by optical communication,wherein the circuit includes a power supply circuit configured to generate a power supply voltage from the alternating voltage, andwherein the conductive layer, the light-emitting element and the light-receiving element are electrically connected to the circuit.2. The semiconductor device according to claim 1 , wherein the light-receiving element has a layer for conducting photoelectric conversion using a non-single crystal thin film claim 1 , andwherein the light-emitting element has an electroluminescent layer using a non-single crystal thin film.3. A semiconductor device comprising:a conductive layer configured to generate an alternating voltage based on receiving a radio wave;a circuit comprising a transistor;a light-receiving element configured to receive a signal by optical communication; anda light-emitting element configured to transmit a signal by optical communication,wherein the circuit includes a ...

SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME

It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board . An electrical conduction with a wiring pattern provided in the circuit board is made by a wire or a solder , thereby forming a high frequency module or the like. 1. A semiconductor device comprising:a circuit board;a transistor comprising source and drain electrodes;a first layer comprising the transistor over the circuit board;a capacitor comprising a first electrode, a dielectric thin film and a second electrode, wherein the dielectric thin film is interposed between the first electrode and the second electrode,a second layer comprising the capacitor over the first layer;a third electrode over the second layer; anda fourth electrode over the circuit board, the fourth electrode being electrically connected to the third electrode,wherein the third electrode is electrically connected to one of the source and the drain electrodes, andwherein the fourth electrode is not covered with the first layer.2. The semiconductor device according to claim 1 , wherein the circuit board is a ceramic board or a resin substrate.3. The semiconductor device according to claim 1 , wherein at least one selected from the group consisting of a CPU claim 1 , a memory element claim 1 , a thin film diode claim 1 , a photoelectric transducer and a resistor element is provided on the circuit board.4. The semiconductor device according to claim 1 , wherein the semiconductor device is one selected from the group consisting of a video camera claim 1 , a digital camera claim 1 , a goggle type display claim 1 , a car navigation claim 1 , a DVD player claim 1 , an electronic game machine ...

Display device, method for manufacturing the same and apparatus for manufacturing the same

The present inventions provides a method for manufacturing a film-type display device efficiently, and a method for manufacturing a large-size film-type display device, and an apparatus for manufacturing the film-type display device. An apparatus for manufacturing a film-type display device includes: transferring means for transferring a substrate over which an integrated circuit constituting the display device is provided; first separating means for separating the integrated circuit from the substrate by adhering a first sheet material to one surface of the integrated circuit; second separating means for separating the integrated circuit from the first sheet material by adhering a second sheet material to the other surface of the integrated circuit; processing means for forming one or both of a conductive film and an insulating film on the integrated circuit; and sealing means for sealing the processed integrated circuit with the second sheet material and a third sheet material.

Thin Film Transistor, Display Device Having Thin Film Transistor, And Method For Manufacturing The Same

A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device in a high yield are provided. In the thin film transistor, a gate electrode, a gate insulating film, crystal grains that mainly contain silicon and are provided for a surface of the gate insulating film, a semiconductor film that mainly contains germanium and covers the crystal grains and the gate insulating film, and a buffer layer in contact with the semiconductor film that mainly contains germanium overlap with one another. Further, the display device has the thin film transistor. 1. A method for manufacturing a thin film transistor , comprising:a first step of forming a gate insulating film;a second step of forming a semiconductor film that mainly contains silicon over the gate insulating film;a third step of introducing at least one of fluorine, a fluoride gas, and hydrogen and applying high-frequency power to etch a part of the semiconductor film that mainly contains silicon, thereby forming crystal grains that mainly contain silicon; anda fourth step of introducing hydrogen and a deposition gas including germanium, and applying high-frequency power, thereby forming a semiconductor film that mainly contains germanium over the gate insulating film and the crystal grains that mainly contains silicon.2. The method for manufacturing a thin film transistor according to claim 1 , further comprising the step of introducing at least one of fluorine claim 1 , a fluoride gas claim 1 , and hydrogen and applying high-frequency power claim 1 , thereby exposing the gate insulating film to plasma before the second step.3. The method for manufacturing a thin film transistor according to claim 1 , wherein in the second step claim 1 , hydrogen is introduced in addition to a deposition gas including silicon claim 1 , and high-frequency power is applied claim 1 , thereby forming the ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming a first wiring layer;forming an insulating layer covering the first wiring layer;forming a semiconductor layer over the insulating layer;forming a first conductive film over the semiconductor layer, a second conductive film over the first conductive film, and a third conductive film over the second conductive film;forming a resist mask over the third conductive film;performing etching including at least two steps on the first to third conductive films to form a second wiring layer having a three-layer structure; andremoving the resist mask by a resist stripper after the etching step,wherein the two-step etching comprisesa first etching process performed until at least the first conductive film is exposed, anda second etching process performed under a condition that an etching rate for the first conductive film is higher than the etching rate in the first etching process and an etching rate for the semiconductor layer is lower than the etching rate in the first etching process.2. The method for manufacturing a semiconductor device according to claim 1 , ...

Semiconductor device

A semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of write cycles. The semiconductor device includes a memory cell including a first transistor, a second transistor, and an insulating layer placed between a source region or a drain region of the first transistor and a channel formation region of the second transistor. The first transistor and the second transistor are provided to at least partly overlap with each other. The insulating layer and a gate insulating layer of the second transistor satisfy the following formula: (t a /t b )×(ε ra /ε rb )<0.1, where t a represents the thickness of the gate insulating layer, t b represents the thickness of the insulating layer, ε ra represents the dielectric constant of the gate insulating layer, and ε rb represents the dielectric constant of the insulating layer.

SEMICONDUCTOR DEVICE

A semiconductor device with a novel structure is provided, which can hold stored data even when no power is supplied and which has no limitations on the number of writing operations. A semiconductor device is formed using a material which enables off-state current of a transistor to be reduced significantly; e.g., an oxide semiconductor material which is a wide-gap semiconductor. With use of a semiconductor material which enables off-state current of a transistor to be reduced significantly, the semiconductor device can hold data for a long period. In a semiconductor device with a memory cell array, parasitic capacitances generated in the nodes of the first to the m-th memory cells connected in series are substantially equal, whereby the semiconductor device can operate stably. 1. A semiconductor device comprising m (m is an integer of 2 or more) write word lines , m read word lines , a bit line , a source line , a signal line and a first to an m-th memory cells connected in series between the bit line and the source line ,the first to the m-th memory cells each comprising:a first transistor including a first gate electrode, a first source electrode, a first drain electrode and a first channel formation region;a second transistor including a second gate electrode, a second source electrode, a second drain electrode and a second channel formation region; anda capacitor,wherein the first channel foil cation region includes a semiconductor material different from a semiconductor material of the second channel formation region,wherein in each of the first to the m-th memory cells, the first gate electrode, either the second source electrode or the second drain electrode, and one electrode of the capacitor are electrically connected to form a node of which electric charges are held, andwherein a parasitic capacitance of the node included in the m-th memory cell is half of or more than half of a parasitic capacitance of the node included in an i (i is an integer of from 1 ...

Display device and electronic device including the same

One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.

Semiconductor device and a method of manufacturing the same

A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.

TFT ARRANGEMENT FOR DISPLAY DEVICE

A new TFT arrangement is demonstrated, which enables prevention of TFT to be formed over a joint portion between the adjacent SOI layers prepared by the process including the separation of a thin single crystal semiconductor layer from a semiconductor wafer. The TFT arrangement is characterized by the structure where a plurality of TFTs each belonging to different pixels is gathered and arranged close to an intersection portion of a scanning line and a signal line. This structure allows the distance between regions, which are provided with the plurality of TFTs, to be extremely large compared with the distance between adjacent TFTs in the conventional TFT arrangement in which all TFTs are arranged in at a regular interval. The formation of a TFT over the joint portion can be avoided by the present arrangement, which leads to the formation of a display device with a negligible amount of display defects. 1. A display device comprising:a first sub-pixel and a second sub-pixel with a signal line interposed therebetween;a third sub-pixel and a fourth sub-pixel with the signal line interposed therebetween; anda first scanning line and a second scanning line which are interposed between the first sub-pixel and the third sub-pixel and between the second sub-pixel and the fourth sub-pixel,wherein the first sub-pixel and the third sub-pixel are located on the same side with respect to the signal line,wherein the first sub-pixel is driven by a first transistor electrically connected to the first scanning line and the signal line, andwherein the fourth sub-pixel is driven by a fourth transistor electrically connected to the second scanning line and the signal line.2. The display device according to claim 1 ,wherein each of the first to fourth sub-pixels comprises a pixel electrode,wherein the first transistor is interposed between the pixel electrode of the first sub-pixel and the first scanning line, andwherein the fourth transistor is interposed between the pixel electrode of ...

Light-Emitting Device

It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide. 1. A light-emitting device comprising:an insulating film over a substrate;a transparent electrode over and in contact with the insulating film;an electroluminescent layer over the transparent electrode; anda metal electrode over the electroluminescent layer,wherein the insulating film comprises silicon and nitrogen, andwherein the transparent electrode comprises a conductive transparent oxide and silicon oxide.2. The light-emitting device according to claim 1 , wherein the conductive transparent oxide is indium tin oxide.3. The light-emitting device according to claim 1 , wherein a composition of the silicon oxide in the transparent electrode ranges from 1 to 10 wt %.4. The light-emitting device according to claim 1 , wherein a composition of the silicon oxide in the transparent electrode ranges from 2 to 5 wt %.5. The light-emitting device according to claim 1 , wherein a composition of the nitrogen in the insulating film is equal to or larger 10 atom %.6. The light-emitting device according to claim 1 , wherein a composition of the nitrogen in the insulating film is equal to or larger 25 atom %.7. The light-emitting device according to claim 1 ,wherein the insulating film further comprises oxygen, andwherein a composition ...

Light emitting device

A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE

A method is demonstrated to form an SOI substrate having a silicon layer with reduced surface roughness in a high yield. The method includes the step of bonding a base substrate such as a glass substrate and a bond substrate such as a single crystal semiconductor substrate to each other, where a region in which bonding of the base substrate with the bond substrate cannot be performed is provided at the interface therebetween. Specifically, the method is exemplified by the combination of: irradiating the bond substrate with accelerated ions; forming an insulating layer over the bond substrate; forming a region in which bonding cannot be performed in part of the surface of the bond substrate; bonding the bond substrate and the base substrate to each other with the insulating layer therebetween; and separating the bond substrate from the base substrate, leaving a semiconductor layer over the base substrate. 1. A silicon-on-insulator substrate comprising:a substrate whose upper surface comprises a first region, a second region, and a third region, wherein the first region is surrounded by the second region and the second region is surrounded by the third region;an insulating layer covering the second region; anda single crystal semiconductor layer covering the insulating layer,wherein the upper surface of the substrate is exposed in the first region and the third region, andwherein the first region is closer to a border between the second region and the third region than a center of the second region.2. The silicon-on-insulator substrate according to claim 1 , wherein the first region and the third region are coplanar with each other.3. The silicon-on-insulator substrate according to claim 1 , wherein a side surface of the insulating layer and a side surface of the single crystal semiconductor layer are coplanar with each other.4. The silicon-on-insulator substrate according to claim 1 , wherein the substrate is an insulator.5. The silicon-on-insulator substrate ...

SEMICONDUCTOR DEVICE

A semiconductor device with a built-in battery whose residual amount of the electrical energy can be detected accurately. The semiconductor device has a battery, a demodulation circuit, a control circuit which generates a signal having information about the residual amount of the electrical energy stored in the battery, and a transmission medium which displays the residual amount of the electrical energy in accordance with the signal. The demodulation circuit demodulates a signal input from an antenna which requests display of the residual amount of the electrical energy. Based on the demodulated signal, the control circuit starts to generate a signal having information about the residual amount of the electrical energy in the battery. 1. A semiconductor device comprising:an antenna configured to receive electric power;a battery;a control circuit configured to detect a voltage output from the battery in accordance with a first signal generated by the antenna, and generate a second signal having information about a residual amount of electrical energy in the battery; anda transmission medium configured to emit the second signal as an elastic wave whose frequency is outside of an audible frequency range,wherein the detection of the voltage output from the battery and the generation of the second signal can be performed by using power of the first signal.2. A semiconductor device comprising:an antenna configured to receive electric power;a battery;a control circuit configured to detect a voltage output from the battery in accordance with a first signal generated by the antenna, and generate a second signal having information about a residual amount of electrical energy in the battery; anda transmission medium configured to emit the second signal as one of an ultraviolet light and an infrared light,wherein the detection of the voltage output from the battery and the generation of the second signal can be performed by using power of the first signal.3. A semiconductor ...

SOURCE FOLLOWER CIRCUIT OR BOOTSTRAP CIRCUIT, DRIVER CIRCUIT COMPRISING SUCH CIRCUIT, AND DISPLAY DEVICE COMPRISING SUCH DRIVER CIRCUIT

In the case of using an analog buffer circuit, an input voltage is required to be added a voltage equal to a voltage between the gate and source of a polycrystalline silicon TFT; therefore, a power supply voltage is increased, thus a power consumption is increased with heat. In view of the foregoing problem, the invention provides a depletion mode polycrystalline silicon TFT as a polycrystalline silicon used in an analog buffer circuit such as a source follower circuit. The depletion mode polycrystalline silicon TFT has a threshold voltage on its negative voltage side; therefore, an input voltage does not have to be increased as described above. As a result, a power supply voltage requires no increase, thus a low power consumption of a liquid crystal display device in particular can be realized. 1. A semiconductor device comprising: a first transistor;', 'a second transistor;', 'a third transistor; and', 'a capacitor,, 'a buffer circuit comprising a source follower circuit, comprisingwherein:a first terminal of the first transistor is electrically connected to a first terminal of the second transistor,a second terminal of the first transistor is electrically connected to a power source,a first terminal of the third transistor is electrically connected to a gate electrode of the first transistor, andthe capacitor is electrically connected to the first terminal of the first transistor, a first terminal of the second transistor, and the first terminal of the third transistor.2. The semiconductor device according to claim 1 ,wherein a gate terminal of the first transistor is electrically connected to an input terminal, andwherein the second terminal of the first transistor is electrically connected to an output terminal.3. A semiconductor device comprising: a first transistor;', 'a second transistor;', 'a third transistor; and', 'a capacitor,, 'a buffer circuit comprising a source follower circuit, comprisingwherein:a first terminal of the first transistor is ...

Semiconductor device

A plurality of memory cells included in a memory cell array are divided into a plurality of blocks every plural rows. A common bit line is electrically connected to the divided bit lines through selection transistors in the blocks. One of the memory cells includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first channel formation region. The second transistor includes a second channel formation region. The first channel formation region includes a semiconductor material different from the semiconductor material of the second channel formation region.

SILICON CRYSTAL BODY AND POWER STORAGE DEVICE USING THE SILICON CRYSTAL BODY

It is difficult to obtain discharge capacity as high as the theoretical capacity in the case where silicon is used as a negative electrode active material. Therefore, objects are to provide a negative electrode active material capable of increasing discharge capacity and to provide a high-performance power storage device including the negative electrode active material. As the negative electrode active material with which the objects are achieved, a silicon crystal body including a plurality of crystalline regions is provided. The silicon crystal body has one extension direction. The plurality of crystalline regions have respective crystal orientations that are substantially the same (also referred to as a preferred orientation). The extension direction and the preferred direction are substantially the same. 1. A silicon crystal body comprising:a plurality of crystalline regions,wherein the silicon crystal body has one extension direction,wherein the plurality of crystalline regions have substantially the same crystal orientation, andwherein the extension direction and the crystal orientation are substantially the same.2. The silicon crystal body according to claim 1 , wherein the crystal orientation is <110>.3. The silicon crystal body according to claim 1 , wherein the crystal orientation is <211>.4. The silicon crystal body according to claim 1 , wherein the crystal orientation is the same as the extension direction when an angle formed by the crystal orientation and the extension direction is in the range of greater than or equal to 0° and less than or equal to 20°.5. The silicon crystal body according to claim 1 , wherein the silicon crystal body is cylindrical or prismatic.6. The silicon crystal body according to claim 1 , wherein the silicon crystal body is conical or pyramidal.7. A power storage device comprising:a pair of electrodes;a separator; andan electrolyte,wherein one of the pair of electrodes is formed using a silicon crystal body including a ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device is provided, which comprises a first electrode, crystalline semiconductor particles, a semiconductor layer, and a second electrode. The crystalline semiconductor particles of which adjacent particles are fusion-bonded, the crystalline semiconductor particles have a first conductivity type, and the semiconductor layer has a second conductivity type which is different from the first conductivity type. 1. A semiconductor device comprising:a first electrode,crystalline semiconductor particles over the first electrode,a semiconductor layer over the crystalline semiconductor particles, anda second electrode over the semiconductor layer,wherein:the crystalline semiconductor particles of which adjacent particles are fusion-bonded,the crystalline semiconductor particles have a first conductivity type, andthe semiconductor layer has a second conductivity type which is different from the first conductivity type.2. The semiconductor device according to claim 1 , wherein the first electrode includes a material selected from the group consisting of aluminum claim 1 , indium claim 1 , tin claim 1 , zinc and a combination thereof.3. The semiconductor device according to claim 1 , wherein each of the crystalline semiconductor particles includes silicon claim 1 , germanium claim 1 , or silicon-germanium.4. The semiconductor device according to claim 1 , wherein a grain diameter of each of the crystalline semiconductor particles is 1 micrometer to 99 micrometers.5. The semiconductor device according to claim 1 , wherein a grain diameter of each of the crystalline semiconductor particles is 1 nanometer to 999 nanometers.6. The semiconductor device according to claim 1 , wherein the semiconductor layer includes polycrystalline silicon claim 1 , microcrystalline silicon claim 1 , or amorphous silicon.7. The semiconductor device according to claim 1 , wherein the second electrode includes indium oxide claim 1 , indium tin oxide claim 1 , or zinc oxide.8. A ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region. 1. A semiconductor device comprising:an insulating layer including a first region and a second region;an oxide semiconductor layer provided in contact with the first region and the second region;a gate insulating layer provided in contact with the oxide semiconductor layer; anda gate electrode provided in contact with the gate insulating layer,wherein the oxide semiconductor layer includes a channel region, a source region, and a drain region,wherein the channel region is provided in contact with the first region,wherein the source region and the drain region are provided in contact with the second region, andwherein a composition of the first region is different from a composition of the second region.2. The semiconductor device according to claim 1 ,wherein the first region comprises silicon oxide, andwherein the second region comprises silicon oxide, silicon nitride, silicon nitride oxide, silicon oxynitride, aluminum oxide, aluminum nitride, or aluminum oxynitride.3. The semiconductor device according to claim 1 , wherein the amount of oxygen released from the first ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element. 1. A semiconductor device comprising: a first thin film transistor formed over the first substrate;', 'a first electrode formed over and connected to the first thin film transistor;', 'an EL layer formed over the first electrode; and', 'a second electrode formed over the EL layer;, 'a pixel portion and a driver circuit formed over a first substrate, the pixel portion comprisingthe driver circuit being capable of driving the pixel portion comprising a second thin film transistor over the first substrate;a semiconductor integrated circuit comprising a third thin film transistor and formed below a second substrate; anda sealing material formed between the first substrate and the second substrate,wherein the semiconductor integrated circuit overlaps with the driver circuit and the pixel portion.2. The semiconductor device according to claim 1 , wherein each of the first substrate and the second substrate is a plastic substrate.3. The semiconductor device according to claim 1 , wherein the sealing material comprises a conductive particle.4. The semiconductor device according to claim 3 , further comprising an FPC connected to the semiconductor integrated circuit through the conductive particle.5. The semiconductor device according to claim 1 , further comprising:a first adhesive layer formed between the first substrate and the pixel portion; anda second adhesive layer formed between the second substrate and the semiconductor integrated circuit ...

Light-Emitting Device, Lighting Device, and Manufacturing Method of Light-Emitting Device

It is an object to provide a light-emitting device which has high power efficiency and high light-extraction efficiency and emits light uniformly in a plane. It is another object to provide a manufacturing method of the light-emitting device. It is another object to provide a lighting device including the light-emitting device. One embodiment of the present invention provides a light-emitting device which includes: a first electrode provided over a substrate; a layer containing a light-emitting organic compound provided over the first electrode; an island-shaped insulating layer provided over the layer containing the light-emitting organic compound; an island-shaped auxiliary electrode layer provided over the island-shaped insulating layer; and a second electrode having a property of transmitting visible light provided over the layer containing the light-emitting organic compound and the island-shaped auxiliary electrode layer.

LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND SEMICONDUCTOR DEVICE

It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide. 1. A light emitting device comprising:a substrate;a transistor over the substrate;a wiring electrically connected to the transistor; and a first conductive layer comprising titanium oxide;', 'an organic layer over and in contact with the first conductive layer;', 'a light emitting layer over the organic layer; and', 'a second conductive layer over the light emitting layer,, 'a light emitting element over the wiring, the light emitting element comprisingwherein the first conductive layer is electrically connected to the transistor through the wiring,wherein the first conductive layer transmits visible light, andwherein the second conductive layer transmits visible light.2. A light emitting device comprising:a substrate;a transistor over the substrate;a wiring electrically connected to the transistor; and a first conductive layer comprising indium tin oxide and titanium oxide;', 'an organic layer over and in contact with the first conductive layer;', 'a light emitting layer over the organic layer; and', 'a second conductive layer over the light emitting layer,, 'a light emitting element over the wiring, the light emitting element comprisingwherein the first conductive layer is electrically connected to the transistor through the wiring,wherein ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over a substrate having an insulating surface, a first gate insulating layer over the first single-crystal semiconductor layer, a gate electrode over the first gate insulating layer, a first interlayer insulating layer over the first gate insulating layer, a second gate insulating layer over the gate electrode and the first interlayer insulating layer, and a second single-crystal semiconductor layer including a second channel formation region and a second impurity region over the second gate insulating layer. The first channel formation region, the gate electrode, and the second channel formation region are overlapped with each other. 1. A semiconductor device comprising:a bonding layer over a substrate having an insulating surface;a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over the bonding layer;a first gate insulating layer over the first single-crystal semiconductor layer;a gate electrode over the first gate insulating layer;a first interlayer insulating layer over the first gate insulating layer;a second gate insulating layer over the gate electrode and the first interlayer insulating layer; anda second single-crystal semiconductor layer including a second channel formation region and a second impurity region over the second gate insulating layer,wherein the first channel formation region, the gate electrode, and the second channel formation region are overlapped with each other.2. The semiconductor device according to claim 1 , wherein the substrate having the insulating surface is a glass substrate.3. The semiconductor device according to claim 1 , wherein the first interlayer insulating layer includes an organic insulating material.4. The semiconductor ...

SEMICONDUCTOR DEVICE, COMMUNICATION SYSTEM, AND METHOD OF CHARGING THE SEMICONDUCTOR DEVICE

An object of the present invention to provide a semiconductor device including a battery that can be wirelessly charged, in which the battery can be charged even when the semiconductor device is not put close to a power feeder. Such a semiconductor device has a structure including an antenna circuit, a communication control circuit to conduct wireless communication via the antenna circuit, a battery to be charged with electric power which is externally wirelessly fed via the antenna circuit, and an oscillator circuit to wirelessly feed electric power via the antenna circuit. In addition, the battery in the semiconductor device is wirelessly charged and the semiconductor device externally feeds electric power wirelessly to a chargeable battery in another semiconductor device. 1. A semiconductor device comprising:a circuit; anda first battery electrically connected to the circuit,wherein the circuit is configured to communicate with a device comprising a second battery wirelessly, andwherein the first battery is configured to be charged from the device comprising the second battery wirelessly.2. The semiconductor device according to claim 1 , wherein the first battery is charged from the device comprising the second battery via an antenna circuit.3. The semiconductor device according to claim 1 , wherein the first battery is charged by using a power of an electromagnetic wave sent from the device comprising the second battery.4. A semiconductor device comprising:an antenna circuit;a communication control circuit electrically connected to the antenna circuit; anda first battery electrically connected to the antenna circuit,wherein the communication control circuit is configured to control communication with a device comprising a second battery via the antenna circuit, andwherein the first battery is configured to be charged from the device comprising the second battery wirelessly.5. The semiconductor device according to claim 4 , wherein the first battery is charged ...

SHIFT REGISTER AND SEMICONDUCTOR DISPLAY DEVICE

The invention provides a shift register which can operate normally while suppressing a delay of signal and a rounding of waveform. The shift register of the invention includes a plurality of stages of flip-flop circuits each of which includes a clocked inverter. The clocked inverter includes a first transistor and a second transistor which are connected in series, a first compensation circuit including a third transistor and a fourth transistor which are connected in series, and a second compensation circuit including a fifth transistor and a transmission gate. According to the first compensation circuit, a timing at which a signal outputted from the flip-flop circuit rises or falls can be controlled in synchronization with an output of two stages before. The second compensation circuit can control a clock signal input can be controlled. 1. A semiconductor device comprising:a first flip-flop circuit;a second flip-flop circuit;a third flip-flop circuit; anda fourth flip-flop circuit,wherein an output of the second flip-flop circuit is inputted to a first terminal of the third flip-flop circuit,wherein an output of the first flip-flop circuit is inputted to a second terminal of the third flip-flop circuit,wherein an output of the fourth flip-flop circuit is inputted to a third terminal of the third flip-flop circuit,wherein a first output of the third flip-flop circuit is inputted to the fourth flip-flop circuit, andwherein a second output of the third flip-flop circuit is inputted to the second flip-flop circuit.2. The semiconductor device according to claim 1 ,wherein clock signal is inputted to a fourth terminal of the third flip-flop circuit.3. The semiconductor device according to claim 2 , a first compensation circuit; and', 'a second compensation circuit., 'wherein the third flip-flop circuit comprises4. The semiconductor device according to claim 3 ,wherein the output of the second flip-flop circuit is inputted to a first terminal of the first compensation ...

LIQUID CRYSTAL DISPLAY DEVICE AND DRIVING METHOD THEREOF

To improve the image quality of a liquid crystal display device. In the liquid crystal display device, writing of an image signal and the turning on the backlights are not sequentially performed in the entire pixel portion but are sequentially performed per specific region of the pixel portion. Thus, it is possible to increase the frequency of input of an image signal to each pixel of the liquid crystal display device. Accordingly, deterioration of display such as color break generated in the liquid crystal display device can be suppressed, and the image quality can be improved. 1. A liquid crystal display device comprising:a pixel portion including a plurality of pixels arranged in m rows and n columns;a driver circuit configured to scan an image signal for controlling transmission of light of a first color for n pixels arranged in a first row to n pixels arranged in an A-th row (A is a natural number less than or equal to m/2), and an image signal for controlling transmission of light of a second color for n pixels arranged in a (A+1)-th row to n pixels arranged in a 2A-th row in parallel;a backlight provided behind the pixel portion, the backlight comprising a plurality of backlight units arranged in a matrix, wherein each of the backlight units comprises a plurality of light sources emitting lights, and the light sources emit light of respective colors; anda backlight control circuit configured to irradiate the n pixels arranged in the first row to n pixels arranged in a B-th row (B is a natural number less than or equal to A/2) with the first color, and irradiate the n pixels arranged in the (A+1)-th row to n pixels arranged in a (A+B)-th row with the second color among the plurality of backlight units in a period that the driver circuit scans the image signal for controlling transmission of the light of the first color for n pixels arranged in a (B+1)-th row to the n pixels arranged in the A-th row, and the image signal for controlling transmission of the ...

Reflective liquid crystal display panel and device using same

There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A liquid crystal dripping method has a problem in that an uncured sealant increases in width at the time of attaching a pair of substrates and thus a liquid crystal material enters the sealant and unevenness occurs in the inner periphery of the sealant. A region in which reduced is the speed of diffusion of liquid crystal at the time of attaching a pair of substrates is provided between a sealant and an orientation film. Further, time for diffusing the liquid crystal and coming in contact with the sealant is made long. Accordingly, the sealant is subjected to photo-curing before the liquid crystal comes in contact with the sealant. The region in which reduced is the speed of diffusion of the liquid crystal is formed using a material for forming a vertical orientation film, a silane coupling agent, a substance having a photocatalytic function, or the like. 1. A liquid crystal display device comprising:a display region on a first substrate;a first orientation film on the display region;a second orientation film surrounding the first orientation film;a liquid crystal layer on the first orientation film and the second orientation film; anda sealant surrounding the second orientation film.2. The liquid crystal display device according to claim 1 ,wherein the second orientation film is a vertical orientation film, andwherein the second orientation film and the sealant partly overlap.3. The liquid crystal display device according to claim 1 ,wherein an area of the first orientation film is larger than an area of the display region.4. The liquid crystal display device according to claim 1 ,wherein the sealant surrounds the first orientation film with the second orientation film interposed therebetween.5. The liquid crystal display device according to claim 1 , further comprising:a third orientation film on a second substrate; anda fourth orientation film surrounding the third orientation film on the second substrate,wherein the liquid crystal layer is provided between the ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors. 1. A method for manufacturing a semiconductor device , comprising:cutting out a first semiconductor integrated circuit including a first chromatic color light-transmitting resin layer and a first photoelectric conversion element from a first light-transmitting substrate;cutting out a second semiconductor integrated circuit including a second chromatic color light-transmitting resin layer and a second photoelectric conversion element from a second light-transmitting substrate;cutting out a third semiconductor integrated circuit including a third chromatic color light-transmitting resin layer and a third photoelectric conversion element from a third light-transmitting substrate;providing the first semiconductor integrated circuit, the second semiconductor integrated circuit, and the third semiconductor integrated circuit into openings in a structure body in which a fibrous body is impregnated with an organic resin; andbonding the first semiconductor integrated circuit, the second semiconductor integrated circuit, and the third semiconductor integrated circuit to the structure body in which the ...

DISPLAY DEVICE, METHOD FOR MANUFACTURING DISPLAY DEVICE, AND SOI SUBSTRATE

A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an insulating surface, and a circuit including a transistor is formed using the single-crystalline semiconductor layers, so that a display device is manufactured. Single-crystalline semiconductor layers separated from a single-crystalline semiconductor substrate are applied to the plurality of single-crystalline semiconductor layers. Each of the single-crystalline semiconductor layers has a size corresponding to one display panel (panel size). 1. A method for manufacturing a display device , comprising the steps of:forming a plurality of projected portions each having an area including one panel in a first substrate by etching the first substrate;implanting an ion into the first substrate to form a plurality of single-crystalline semiconductor layers each having an area including one panel in the plurality of projected portions, respectively;bonding the plurality of single-crystalline semiconductor layers to a second substrate with an insulating layer interposed therebetween;exposing a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer each selected from the plurality of single-crystalline semiconductor layers at a time, wherein each of the first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer has an area including one panel;forming a first display portion over the second substrate by using the first single-crystalline semiconductor layer and a second display portion over the second substrate by using the second single-crystalline semiconductor layer.2. The method for manufacturing a display device according to claim 1 , wherein the insulating layer is a silicon oxide layer formed by a chemical vapor deposition method ...

Apparatus For Forming A Film And An Electroluminescence Device

A device having three evaporation sources and a unit for moving the respective evaporation sources in one chamber is used, whereby it becomes possible to increase efficiency of use of an evaporation material. Consequently, manufacturing cost can be reduced, and a uniform thickness can be obtained over an entire surface of a substrate even in the case in which a large area substrate is used. 1. A method of manufacturing a semiconductor device comprising:forming a first layer over a substrate by a first evaporation, wherein the first evaporation is performed in a chamber while a first evaporation source of the first evaporation is moved;forming a second layer over the substrate by a second evaporation, wherein the second evaporation is performed in the chamber while a second evaporation source of the second evaporation is moved; andforming a third layer over the substrate by a third evaporation, wherein the third evaporation is performed in the chamber while a third evaporation source of the third evaporation is moved,wherein at least one of the first evaporation source, the second evaporation source, and the third evaporation source includes a first container and a second container, andwherein an inclination of a guide portion of the first container is different from an inclination of a guide portion of the second container.2. The method of manufacturing a semiconductor device according to claim 1 , wherein at least one of the first evaporation source claim 1 , the second evaporation source and the third evaporation source is moved in an X direction and a Y direction.3. The method of manufacturing a semiconductor device according to claim 1 , wherein at least one of the first evaporation source claim 1 , the second evaporation source and the third evaporation source is moved in an X direction claim 1 , a Y direction claim 1 , and a Z direction.4. The method of manufacturing a semiconductor device according to claim 1 , wherein at least one of the first evaporation ...

METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less. 1. A method for forming a microcrystalline semiconductor film , comprising:forming a seed crystal over an insulating film by a plasma CVD method under a first condition where a flow rate of hydrogen is greater than or equal to 50 times and less than or equal to 1000 times a flow rate of a deposition gas containing silicon, and a pressure in a process chamber is greater than 1333 Pa and less than or equal to 13332 Pa; andforming a microcrystalline semiconductor film over the seed crystal by a plasma CVD method under a second condition where a flow rate of hydrogen is greater than or equal to 100 times and less than or equal to 2000 times a flow rate of a deposition gas containing silicon, and a pressure in the process chamber is greater than or equal to 1333 Pa and less than or equal to 13332 Pa.2. The method for forming a microcrystalline semiconductor film claim 1 , according to claim 1 , wherein the seed crystal comprises a mixed phase grain including an amorphous silicon region and a crystallite that is a single crystal claim 1 , and wherein the mixed phase grain is continuously provided in the seed crystal.3. The method for forming a microcrystalline ...

METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE

One object is to provide excellent electric characteristics of an end portion of a single crystal semiconductor layer having a tapered shape. An embrittled region is formed in a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions. Then, the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating film interposed therebetween and a first single crystal semiconductor layer is formed over the base substrate with the insulating film interposed therebetween by separating the single crystal semiconductor substrate at the embrittled region. After that, a second single crystal semiconductor layer having a tapered end portion is formed by performing dry etching on the first single crystal semiconductor layer, and etching is performed on the end portion of the second single crystal semiconductor layer in a state where a potential on the base substrate side is a ground potential. 1. A method for manufacturing an SOI substrate comprising:irradiating a single crystal semiconductor substrate with accelerated ions to form an embrittled region in the single crystal semiconductor substrate;bonding the single crystal semiconductor substrate and a base substrate to each other with an insulating film interposed therebetween;separating the single crystal semiconductor substrate at the embrittled region to form a first single crystal semiconductor layer over the base substrate with the insulating film interposed therebetween;performing dry etching on the first single crystal semiconductor layer to form a second single crystal semiconductor layer having a tapered end portion; andperforming etching on the tapered end portion of the second single crystal semiconductor layer in a state where a potential on the base substrate side is a ground potential.2. The method for manufacturing the SOI substrate claim 1 , according to claim 1 , wherein a mask pattern is formed over the first ...

APPARATUS AND METHOD FOR DOPING

There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current. 1. A method for manufacturing a semiconductor device comprising:holding a substrate onto a substrate holder;radiating an ion beam toward the substrate; andradiating a laser beam toward the substrate,wherein the ion beam and the laser beam have a linear cross section on an irradiation surface, andwherein radiating the ion beam and radiating the laser beam are performed in a same chamber.2. The method for manufacturing a semiconductor device according to claim 1 , wherein the substrate is transferred in a perpendicular direction to the linear cross section.3. The method for manufacturing a semiconductor device according to claim 1 , wherein the ion beam contains Hor Hion.4. The method for manufacturing a semiconductor device according to claim 1 , wherein the chamber contains a first window to introduce the ion beam and a second window to introduce the laser beam claim 1 , and wherein the first window is wider than the second window.5. The method for manufacturing a semiconductor device according to claim 1 , wherein radiating the laser beam is performed after radiating the ion beam.6. A method for manufacturing a semiconductor device comprising:holding a substrate onto a substrate holder;radiating an ion beam toward the substrate; andradiating a laser beam toward the substrate,wherein the ion beam and the laser beam have a linear cross section on an irradiation surface, andwherein radiating the ion beam and radiating the laser beam are continuously performed by transferring the substrate.7. The ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

An object of this invention is to provide a semiconductor device (an RFID) with reduced loss of voltage/current corresponding to a threshold value of a transistor, and having a voltage/current rectification property. Another object of this invention is to simplify a fabrication process and a circuit configuration. A rectifier circuit is provided in an element included in a semiconductor device (RFID) capable of communicating data wirelessly. As compared to the case where only a diode is provided, coils are provided between gate terminals and drain terminals of transistors constituting the diode in a rectifier circuit, so that the coils overlap an antenna which receives a radio wave, whereby a voltage output by the rectifier circuit is increased using electromagnetic coupling between the antenna which receives a radio wave and the coils, so that the rectification efficiency is improved. 1. A semiconductor device comprising:a receiving coil including a first terminal and a second terminal; and a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; the first drain electrode being electrically connected to the first terminal of the receiving coil; and', 'a first coil at least partially overlapping the receiving coil and electrically connected between the first gate electrode and the first drain electrode of the first transistor., 'a rectifier circuit comprising2. A semiconductor device according to claim 1 , further comprising:a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, the second drain electrode and the second source electrode being electrically connected to the second terminal of the receiving coil and to the first drain electrode of the first transistor, respectively; anda second coil electrically connected between the second gate electrode and the second drain electrode of the second transistor.3. A semiconductor device comprising:an coil antenna ...

SEMICONDUCTOR DEVICE AND IC LABEL, IC TAG, AND IC CARD PROVIDED WITH THE SEMICONDUCTOR DEVICE

A charge accumulation circuit having a structure in which a capacitor is divided into a plurality of pieces and the divided capacitors are connected in parallel through switches is provided. The charge accumulation circuit controls the switch provided between the capacitors and thus can dynamically vary electrostatic capacitance of the charge accumulation circuit which applies a voltage to a constant voltage circuit. 1. A semiconductor device comprising:an antenna;a rectifier circuit electrically connected to the antenna;a first capacitor comprising a first electrode electrically connected to the rectifier circuit, and a second electrode electrically connected to a first ground line;a first switch electrically connected to the first electrode, and comprising a first transistor and a first diode, wherein one terminal of the first diode is electrically connected to one of source and drain of the first transistor, and the other terminal of the first diode is electrically connected to the other of source and drain of the first transistor;a second capacitor comprising a third electrode electrically connected to the first switch, and a fourth electrode electrically connected to a second ground line.2. The semiconductor device according to claim 1 , wherein the first switch further comprises:a first comparator electrically connected to a gate of the first transistor, anda resistor electrically connected to one input terminal of the first comparator and the one of source and drain of the first transistor.3. The semiconductor device according to claim 1 , further comprising a second transistor and a second comparator;wherein one of source and drain of the second transistor is electrically connected to the first capacitor and the first switch, andwherein the second comparator is electrically connected to a gate of the second transistor.4. The semiconductor device according to claim 3 , further comprising a logic circuit electrically connected to the other of source and drain ...

OPTICAL SENSOR DEVICE AND ELECTRONIC APPARATUS

In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced. 1. An optical sensor device comprising:an optical sensor element;an amplifier circuit;an I-V conversion resistor;a first level shift circuit; anda second level shift circuit,wherein a first input terminal of the amplifier circuit is electrically connected to the I-V conversion resistor and a first electrode of the optical sensor element through the first level shift circuit, andwherein an output terminal of the amplifier circuit is electrically connected to a second input terminal o the amplifier circuit through the second level shift circuit.2. The optical sensor device according to claim 1 , wherein the optical sensor element and the amplifier circuit are formed over a substrate.3. The optical sensor device according to claim 2 , wherein the substrate is a plastic substrate.4. The optical sensor device according to claim 2 , wherein the substrate is a glass substrate.5. The optical sensor device according to claim 1 , wherein the optical sensor element comprises amorphous silicon.6. The optical sensor device according to claim 1 , wherein the optical sensor element is a photodiode.7. The optical sensor device according to claim 1 , wherein the optical sensor element comprises polysilicon.8. The optical sensor device according to claim 1 , wherein the amplifier ...

LIGHT EMITTING DEVICE

The luminance of different colors of light emitted from EL elements in a pixel portion of a light emitting device is equalized and the luminance of light emitted from the EL elements is raised. The pixel portion of the light emitting device has EL elements whose EL layers contain triplet compounds and EL elements whose EL layers contain singlet compounds in combination. The luminance of light emitted from the plural EL elements is thus equalized. Furthermore, a hole transporting layer has a laminate structure to thereby cause the EL elements to emit light of higher luminance. 1. A light emitting device comprising:a substrate;a first electrode over the substrate;a second electrode adjacent to the first electrode;a first light emitting layer between the first electrode and a third electrode; anda second light emitting layer between the second electrode and the third electrode,wherein the first light emitting layer comprises a triplet compound,wherein the second light emitting layer comprises a singlet compound, andwherein a plurality of hole transporting layers are between the third electrode and the first electrode or the second electrode.2. The light emitting device according to claim 1 , wherein one of the plurality of hole transporting layers comprises leastα-NPD.3. The light emitting device according to claim 2 , wherein the one of the plurality of hole transporting layers is in contact with the first light emitting layer or the second light emitting layer.4. A light emitting device according to claim 1 , wherein the triplet compound includes iridium.5. A display comprising the light emitting device according to for a display portion.6. A light emitting device comprising:a substrate; a first electrode;', 'a second electrode; and', 'a first light emitting layer between the first electrode and the second electrode;, 'a first EL element over the substrate, the first EL element comprising a third electrode;', 'the second electrode; and', 'a second light emitting ...

Semiconductor Device and Manufacturing Method Thereof

A method for manufacturing a semiconductor device, which enables miniaturization and reduction of defect, is provided. It includes forming an oxide semiconductor layer, and source and drain electrodes in contact with the oxide semiconductor layer, over an insulating surface; forming insulating layers over the source electrode and the drain electrode; forming a gate insulating layer over the oxide semiconductor layer, the source and drain electrodes, and the insulating layer; forming a conductive layer over the gate insulating layer; forming an insulating film covering the conductive layer; processing the insulating film so that at least part of a region of the conductive layer, which overlaps with the source electrode or the drain electrode, is exposed; and etching the exposed region of the conductive layer to form a gate electrode overlapping with at least part of the region sandwiched between the source electrode and the drain electrode, in a self-aligned manner. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming an oxide semiconductor layer on an insulating surface;forming a source electrode in contact with the oxide semiconductor layer;forming a drain electrode in contact with the oxide semiconductor layer;forming a first insulating layer over the source electrode;forming a second insulating layer over the drain electrode;forming a gate insulating layer over the oxide semiconductor layer, the source electrode, the drain electrode, the first insulating layer, and the second insulating layer;forming a conductive layer over the gate insulating layer so that the conductive layer overlaps with at least a part of a region sandwiched between the source electrode and the drain electrode;forming an insulating film so that the insulating film covers the conductive layer;processing the insulating film so that at least parts of regions of the conductive layer, which overlap with the source electrode and the drain electrode, are exposed; ...

Semiconductor Device and Driving Method Thereof

A voltage equal to the threshold value of a TFT () is held in capacitor unit (). When a video signal is inputted from a source signal line, the voltage held in the capacitor unit is added thereto and a resultant signal is applied to a gate electrode of the TFT (). Even when a threshold value is varied for each pixel, each threshold value is held in the capacitor unit () for each pixel. Thus, the influence of a variation in threshold value can be eliminated. Further, holding of the threshold value is conducted by only the capacitor unit () and a charge does not move at writing of a video signal so that a voltage between both electrodes is not changed. Thus, it is not influenced by a variation in capacitance value. 1. A display device comprising: a first transistor;', 'a second transistor;', 'a third transistor;', 'a fourth transistor;', 'a first capacitor;', 'a second capacitor; and', 'a light-emitting element,, 'a pixel comprisingwherein one of a source and a drain of the first transistor is electrically connected to a first wiring,wherein the other of the source and the drain of the first transistor is directly connected to one of a source and a drain of the second transistor,wherein the other of the source and the drain of the second transistor is directly connected to the light-emitting element,wherein one of a source and a drain of the third transistor is directly connected to the other of the source and the drain of the first transistor,wherein the other of the source and the drain of the third transistor is directly connected to a gate of the first transistor,wherein one of a source and a drain of the fourth transistor is directly connected to a second wiring,wherein a first electrode of the first capacitor is directly connected to the other of the source and the drain of the fourth transistor,wherein a second electrode of the first capacitor is directly connected to the gate of the first transistor, andwherein a first electrode of the second capacitor is ...

ORGANIC LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE WITH THE ORGANIC LIGHT-EMITTING ELEMENT

The present invention provides a white organic light-emitting element high in the emission efficiency. In particular, the invention provides a white organic light-emitting element that has an emission spectrum having peaks in the respective wavelength regions of red color, green color and blue color and is high in the emission efficiency. 1. A light emitting element comprising:a first electrode comprising a first transparent conductive film; a first emission region; and', 'a second emission region comprising a phosphorescent material,, 'an electroluminescent layer over the first electrode comprisinga second electrode comprising a second transparent conductive film, over the electroluminescent layer,wherein the second emission region is located apart from the first emission region.2. A light emitting element comprising:a first electrode comprising a first transparent conductive film; a first emission region; and', 'a second emission region comprising a phosphorescent material, a second electrode comprising a second transparent conductive film, over the electroluminescent layer; and, 'an electroluminescent layer over the first electrode comprisinga transparent protective layer over the second electrode,wherein the second emission region is located apart from the first emission region.3. A light emitting element comprising:a transistor;a first electrode comprising a first transparent conductive film, the first electrode being electrically connected to the transistor;an electroluminescent layer over the first electrode comprising; anda second electrode comprising a second transparent conductive film, over the electroluminescent layer,wherein the light emitting element emits light from both the first electrode and the second electrode.4. A light emitting element comprising:a transistor;a first electrode comprising a first transparent conductive film, the first electrode being electrically connected to the transistor;an electroluminescent layer over the first electrode;a ...

Soi substrate, method for manufacturing the same, and semiconductor device

An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.

Semiconductor Device

A semiconductor device includes a material with which off-state current of a transistor can be sufficiently small; for example, an oxide semiconductor material is used. Further, transistors of memory cells of the semiconductor device, which include an oxide semiconductor material, are connected in series. Further, the same wiring (the j-th word line (j is a natural number greater than or equal to 2 and less than or equal to m)) is used as a wiring electrically connected to one of terminals of a capacitor of the j-th memory cell and a wiring electrically connected to a gate terminal of a transistor, in which a channel is formed in an oxide semiconductor layer, of the (j−1)-th memory cell. Therefore, the number of wirings per memory cell and the area occupied by one memory cell are reduced. 1. A semiconductor device comprising:a source line;a bit line;(m+1) word lines (in is a natural number greater than or equal to 2);a selection line;a first to an m-th memory cells connected in series between the source line and the bit line; anda selection transistor including a gate terminal which is electrically connected to the selection line, a first transistor including a first gate terminal, a first source terminal, and a first drain terminal;', 'a second transistor including a second gate terminal, a second source terminal, and a second drain terminal; and', 'a capacitor,, 'wherein each of the first to the m-th memory cells comprisesthe second transistor includes an oxide semiconductor layer,a channel of the second transistor is formed in the oxide semiconductor layer,the source line is electrically connected to the first source terminal of the m-th memory cell through the selection transistor,the bit line is electrically connected to the second drain terminal of the first memory cell and the first drain terminal of the first memory cell,a k-th word line (k is a natural number greater than or equal to 1 and less than or equal to m) is electrically connected to the second ...

WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD

A power feeding device which wirelessly supplies power to a power receiver receives a position and resonant frequency detection signal from the power receiver, detects the position and the resonant frequency of the power receiver, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. As the power signal for power transmission, two signals having different frequencies, which are generated using a mixer by mixing a base carrier (a first signal) with a conversion carrier (a second signal) generated on the basis of the resonant frequency, are used. 1. A semiconductor device comprising:an antenna circuit configured to receive a first electromagnetic wave from a power receiver;a signal processing circuit configured to detect a resonant frequency of the power receiver from a signal transmitted via the first electromagnetic wave,a first oscillator circuit configured to generate a first signal;a second oscillator circuit configured to generate a second signal in accordance with the distance and the resonant frequency of the power receiver; anda mixer configured to mix the first signal with the second signal,wherein the antenna circuit is configured to transmit a signal generated by the mixer to the power receiver via a second electromagnetic wave.2. The semiconductor device according to claim 1 , further comprising a first power supply circuit configured to supply power to the first oscillator circuit and a second power supply circuit configured to supply power to the second oscillator circuit.3. The semiconductor device according to claim 1 ,wherein power is transmitted to the power receiver via the second electromagnetic wave, andwherein the signal processing circuit is configured to control power to be transmitted to the power receiver.4. A wireless power feeding system comprising:a power feeding device; anda power receiver including a power receiving device portion, a transmission/reception circuit portion ...

WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD

An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver to be supplied with power, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. 1. A wireless power feeding system comprising: a power feeding device transmission/reception circuit portion; and', 'a signal processing circuit portion having a resonant frequency detection function and a power transmission control function;, 'a wireless power feeding device comprising a power receiver transmission/reception circuit portion;', 'a signal processing circuit portion; and', 'a power storage portion comprising a secondary battery,', receive a detection signal transmitted by the power receiver;', 'detect a resonant frequency of the power receiver based on the detection signal;', 'adjust a frequency of a power signal to be transmitted by the power feeding device to the power receiver, based on the resonant frequency of the power receiver; and', 'transmit the power signal to the power receiver; and, 'wherein the wireless power feeding device is configured to, transmit the detection signal to the power feeding device;', 'receive the power signal having a frequency adjusted to the resonant frequency of the wireless power receiver; and', 'store power of the power signal in the secondary battery of the power storage portion., 'wherein the wireless power receiver is configured to], 'a wireless power receiver comprising2. A wireless power receiver comprising: an antenna circuit;', 'a rectifier circuit;', 'a demodulation ...

WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD

An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end, without causing increases in complexity and size of devices. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver by receiving a position and resonant frequency detection signal using a plurality of sub-carriers having different frequencies from the power receiver, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. An efficient power feeding service can be offered by transmitting a power signal to the power receiver at an optimum frequency for high power transmission efficiency. 1. A semiconductor device comprising:an antenna circuit;a rectifier circuit;a demodulation circuit;a signal processing circuit portion;an oscillator circuit;a divider circuit;a switch;a mixer; anda secondary battery,wherein the antenna circuit is configured to receive an electromagnetic wave from a power feeding device and output an electrical signal,wherein the rectifier circuit is configured to rectify the electrical signal and generate a rectified signal,wherein the demodulation circuit is configured to demodulate the rectified signal and transmit a demodulated signal to the signal processing circuit portion,wherein the signal processing circuit portion is configured to receive the demodulated signal and generate a transmission signal,wherein the oscillator circuit is configured to operate in response to the transmission signal and input a base carrier to the divider circuit and the mixer via the switch,wherein the divider circuit is configured to divide a frequency of the base ...

RADIO FIELD INTENSITY MEASUREMENT DEVICE, AND RADIO FIELD INTENSITY DETECTOR AND GAME CONSOLE USING THE SAME

The present invention provides a radio field intensity measurement device having a display portion with improved visibility, in the case of measuring a weak radiowave from a long distance. In the radio field intensity measurement device, a battery is provided as a power source for power supply and the battery is charged by a received radiowave. When a potential of a signal obtained from the received radiowave is higher than an output potential of the battery, the power is stored in the battery. On the other hand, when the potential of the signal obtained from the received radiowave is lower than the output potential of the battery, power produced by the battery is used as power to drive the radio field intensity measurement device. As an element to display the radio field intensity, a thermochromic element or an electrochromic element is used. 1. A device comprising:an antenna configured to convert a received radiowave to an induction signal;a rectifier circuit configured to output a direct signal by rectifying the induction signal;a battery to be charged by the direct signal;a control circuit configured to compare a potential of the direct signal with an output potential of the battery;an amplifier circuit configured to amplify the direct signal; anda first element which is operated depending on the direct signal amplified by the amplifier circuit,wherein the control circuit is configured to charge the battery when the potential of the direct signal is higher than the output potential of the battery, and supply power of the battery to the amplifier circuit when the potential of the direct signal is lower than the output potential of the battery.2. The device according to claim 1 , wherein the device is a radio field intensity measurement device.3. The device according to claim 1 , wherein the first element is a display element.4. The device according to claim 1 , wherein the control circuit comprises a transistor comprising ZnO or InGaZnO.5. The device according to ...

Current Driving Circuit and Display Device Using The Current Driving Circuit

A current drive circuit which can improve a rate for signal writing and a driving rate of an element even when a signal current is small, and a display device using the current drive circuit are provided. The current drive circuit for supplying a signal current to a node of a driven circuit through a signal line includes a precharge function for supplying a precharge voltage to the node through the signal line and the precharge function includes a supply function for supplying the precharge voltage to the node and the signal line prior to supplying the signal current. 1. A semiconductor device comprising:a driven circuit comprising a first transistor;a signal line electrically connected to the first transistor through a node;a precharge circuit electrically connected to the signal line and comprising a second transistor; anda current source circuit electrically connected to the first transistor and the second transistor,wherein a gate width of the second transistor is larger than a gate width of the first transistor, andwherein the precharge circuit is configured to perform a precharge of the driven circuit prior to supplying a signal current to the driven circuit.2. The semiconductor device according to claim 1 , further comprising an impedance transformation amplifier.3. The semiconductor device according to claim 2 , wherein the impedance transformation amplifier is a source follower circuit.4. The semiconductor device according to claim 1 ,wherein the driven circuit is included in a pixel circuit, andwherein the precharge circuit is included in a source driver circuit.5. The semiconductor device according to claim 1 , wherein the precharge is performed by supplying a precharge voltage to the node.6. The semiconductor device according to claim 1 , wherein the precharge circuit is included in a current drive circuit.7. The semiconductor device according to claim 1 , further comprising:a first switch configured to control an electrical connection between the signal ...

METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE

Data of display data signals input to a plurality of display circuits are alternately switched between an image data for the left eye and an image data for the right eye every a plurality of frame periods; the plurality of display circuits are divided into a plurality of groups each including the display circuits in at least one row, and in each group, pulses of display selection signals are sequentially input Z (Z is a natural number greater than or equal to 3) times to the display circuits in the respective rows; and data of the display data signal input during a K-th (K is a natural number greater than or equal to 2) frame period and data of the display data signal input during a (K−1)-th frame period are compared. As a result, a color image and a black image are selectively displayed. 1. A method for driving a liquid crystal display device comprising a plurality of display circuits arranged in matrix , and a light unit overlapping with the plurality of display circuits and including a plurality of light-emitting diode groups , the method for driving the liquid crystal display device comprising the steps of:inputting display selection signals to the plurality of display circuits in respective rows;inputting display data signals to the respective plurality of display circuits in accordance with pulses of the display selection signals; anddisplaying a right-eye image or a left-eye image corresponding to data of the display data signal,wherein light incident on a right eye of a viewer is blocked when data of the display data signal is data for a left eye,wherein light incident on the left eye of the viewer is blocked when data of the display data signal is data for the right eye,wherein the data of the display data signal is alternately switched between the data for the left eye and the data for the right eye every a plurality of frame periods including a first frame period and a second frame period just after the first period,wherein each of the plurality of ...

SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME

An object is to provide a semiconductor device in which lower power consumption is realized by lowering voltage for data writing without increase in types of power supply potentials. Another object is to provide a semiconductor device in which threshold voltage drop of a selection transistor is suppressed without increase in types of power supply potentials for data writing. A diode-connected transistor is electrically connected in series with a word line electrically connected to a gate of an n-channel selection transistor. A capacitor is provided between the word line and a bit line electrically connected to one of a source and a drain of the selection transistor; alternatively, the capacitance between the bit line and the word line is used. In data writing, the timing of selecting the word line is earlier than the timing of selecting the bit line. 1. A semiconductor device comprising:a diode;a first transistor;a second transistor; anda functional circuit,wherein an output terminal of the diode is electrically connected to a first signal line,wherein one of a source and a drain of the first transistor is electrically connected to the first signal line,wherein the other of the source and the drain of the first transistor is electrically connected to a reference potential line,wherein a gate of the second transistor is electrically connected to the first signal line,wherein one of a source and a drain one of the second transistor is electrically connected to a second signal line, andwherein the functional circuit is electrically connected to the other of the source and the drain of the second transistor.2. The semiconductor device according to claim 1 ,wherein the diode is a third transistor,wherein a gate of the third transistor is connected to one of a source and a drain of the third transistor, andwherein the other of the source and the drain of the third transistor is electrically connected to the first signal line.3. The semiconductor device according to claim ...

SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME

A transistor includes first and second control gates, and a storage gate. The storage gate is made to be a conductor, supplied with a specific potential, and then made to be an insulator, thereby holding the potential. Data is written by making the storage gate a conductor, supplying a potential of data to be stored, and making the storage gate an insulator. Data is read by making the storage gate an insulator, supplying a potential to a read signal line connected to one of a source and a drain of the transistor, supplying a potential for reading data to the first control gate, and then detecting a potential of a bit line connected to the other of the source and the drain. 1. A semiconductor device comprising:a transistor including a first gate, a second gate, a third gate and a semiconductor layer; anda data line electrically connected to the third gate,wherein the third gate includes an oxide semiconductor,wherein the semiconductor layer includes a channel formation region,wherein the first gate overlaps with the channel formation region,wherein the third gate is provided between the first gate and the channel formation region,wherein the third gate includes a first region and a second region, the first region overlapping with the channel formation region, and the second region extending beyond an edge of the first gate, andwherein the second gate overlaps with the second region.2. The semiconductor device according to claim 1 , wherein the semiconductor layer comprises an oxide semiconductor.3. The semiconductor device according to claim 1 , wherein the second gate overlaps with the edge of the first gate claim 1 , the second region claim 1 , and an edge of the data line.4. A semiconductor device comprising:a transistor including a first control gate, a second control gate, a storage gate and a semiconductor layer;a word line;a data line;a control line;a read signal line; anda bit line,wherein the semiconductor layer includes a channel formation region,wherein ...

Method of fabricating display device

To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form an insulating layer having an opening; and forming a conductive film in the opening so as to be in contact with the exposed conductive layer, whereby the conductive layer and the conductive film can be electrically connected through the insulating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a cylinder, or a triangular prism), a needle shape, or the like can be used.

SEMICONDUCTOR DEVICE

In a multi-core semiconductor device, a data bus between CPUs or the like consumes a larger amount of power. By provision of a plurality of CPUs which transmit data by a backscattering method of a wireless signal, a router circuit which mediates data transmission and reception between the CPUs or the like, and a thread control circuit which has a thread scheduling function, a semiconductor device which consumes less power and has high arithmetic performance can be provided at low cost. 1. A semiconductor device comprising:a first circuit;a second circuit;wherein the first circuit includes a first wireless circuit which includes a first coil and a modulation circuit,wherein the second circuit includes a second wireless circuit which includes a second coil and a demodulation circuit,wherein the first wireless circuit is configured to transmit data wirelessly, andwherein the second wireless circuit is configured to receive data based on the data transmitted from the first wireless circuit wirelessly.2. The semiconductor device according to claim 1 , wherein the first wireless circuit is configured to transmit data by a backscattering method.3. The semiconductor device according to claim 1 , wherein each of the first circuit and the second circuit comprises a transistor.4. The semiconductor device according to claim 3 , wherein the transistor is a thin film transistor formed over a glass substrate or a plastic substrate.5. The semiconductor device according to claim 3 , wherein the transistor is a transistor formed on a semiconductor substrate.6. A semiconductor device comprising:a first circuit;a second circuit; anda router circuit;wherein each of the first circuit and the second circuit includes a first wireless circuit which includes a first coil, a first demodulation circuit, a first modulation circuit, a data processing circuit; and', 'a second wireless circuit which includes a second coil, a second demodulation circuit, and a second modulation circuit,, 'wherein ...

Display device and manufacturing method of display device

It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

ORGANIC FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE

It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced. 1a semiconductor layer containing an organic semiconductor material; anda source electrode and a drain electrode,wherein at least one of the source electrode and the drain electrode comprises a composite layer comprising an organic compound and an inorganic compound;wherein the organic compound is a carbazole derivative represented by a general formula (1);. An organic field effect transistor comprising:{'sup': 11', '13', '11', '12', '14, 'wherein each of Rand Rrepresents hydrogen, an alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 25 carbon atoms, a heteroaryl group having 5 to 9 carbon atoms, an arylalkyl group, or an acyl group having 1 to 7 carbon atoms; Arrepresents an aryl group having 6 to 25 carbon atoms or a heteroaryl group having 5 to 9 carbon atoms; Rrepresents hydrogen, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 12 carbon atoms; Rrepresents hydrogen, an alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 12 carbon atoms, or a substituent represented by a general formula (2); and'}{'sup': 15', '12', '16, 'wherein in the substituent represented by the general formula (2), Rrepresents hydrogen, an alkyl group having 1 to 6 carbon atoms, an aryl ...

SEMICONDUCTOR DEVICE

An object is to provide a semiconductor device which can hold stored data even when not powered and which achieves high integration by reduction of the number of wirings. The semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, e.g., an oxide semiconductor material which is a wide bandgap semiconductor. When a semiconductor material which allows a sufficient reduction in the off-state current of a transistor is used, data can be held for a long period. One line serves as the word line for writing and the word line for reading and one line serves as the bit line for writing and the bit line for reading, whereby the number of wirings is reduced. Further, by reducing the number of source lines, the storage capacity per unit area is increased. 1. A semiconductor device comprising:n bit lines, n being a natural number;m memory cells electrically connected to the bit lines, m being a natural number; andm+1 word lines, a first transistor comprising a first gate electrode, a first source electrode, and a first drain electrode;', 'a second transistor comprising a second gate electrode, a second source electrode, and a second drain electrode; and', 'a capacitor,, 'wherein the memory cell compriseswherein the first transistor includes a substrate including a semiconductor material,wherein the second transistor includes an oxide semiconductor layer,wherein the bit line is electrically connected to the first drain electrode and the second drain electrode of a m-th memory cell,wherein a first word line is electrically connected to the second gate electrode of the m-th memory cell,wherein a k-th word line is electrically connected to a second gate electrode of a k-th memory cell and is electrically connected to the first source electrode and one electrode of the capacitor in a (k−1)-th memory cell, k being a natural number of greater than or equal to 2 and less than or equal to m+1, andwherein the first gate electrode ...

SEMICONDUCTOR DEVICE

An object is to provide a semiconductor device which can hold stored data even when not powered and which achieves high integration by reduction of the number of wirings. The semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, e.g., an oxide semiconductor material which is a wide bandgap semiconductor. When a semiconductor material which allows a sufficient reduction in the off-state current of a transistor is used, data can be held for a long period. One line serves as the word line for writing and the word line for reading and one line serves as the bit line for writing and the bit line for reading, whereby the number of wirings is reduced. Accordingly, the storage capacity per unit area is increased. 1. A semiconductor device comprising:a source line;n bit lines, n being a natural number;m memory cells electrically connected in series between the source line and the bit lines, m being a natural number;m+1 word lines;a first selection line and a second selection line;a first selection transistor comprising a gate electrode electrically connected to the first selection line; anda second selection transistor comprising a gate electrode electrically connected to the second selection line; a first transistor comprising a substrate including a semiconductor material, a first gate electrode, a first source electrode, and a first drain electrode;', 'a second transistor comprising an oxide semiconductor layer, a second gate electrode, a second source electrode, and a second drain electrode; and', 'a capacitor,, 'wherein the memory cells each compriseswherein the source line is electrically connected to the first source electrode in a m-th memory cell through the second selection transistor,wherein a first bit line is electrically connected to the first drain electrode of a first memory cell through the first selection transistor and is electrically connected to the second drain electrode of the first memory ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The electric characteristics of a semiconductor device including an oxide semiconductor change by irradiation with visible light or ultraviolet light. In view of the above problem, one object is to provide a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. Over an oxide insulating layer, a first oxide semiconductor layer is formed to a thickness greater than or equal to 1 nm and less than or equal to 10 nm and crystallized by heat treatment, so that a first crystalline oxide semiconductor layer is formed. A second crystalline oxide semiconductor layer with a greater thickness than the first crystalline oxide semiconductor layer is formed thereover. 1. A method for manufacturing a semiconductor device comprising the steps of:forming a first crystalline oxide semiconductor layer over an oxide insulating layer;forming a second crystalline oxide semiconductor layer with a greater thickness than the first crystalline oxide semiconductor layer over and in contact with the first crystalline oxide semiconductor layer;forming source and drain electrodes over the second crystalline oxide semiconductor layer;forming a gate insulating layer over the source and drain electrodes; andforming a gate electrode over the gate insulating layer.2. The method for manufacturing a semiconductor device according to claim 1 , wherein the first crystalline oxide semiconductor layer has a thickness greater than or equal to 1 nm and less than or equal to 10 nm.3. The method for manufacturing a semiconductor device according to claim 1 , wherein the first crystalline oxide semiconductor layer contains zinc and has c-axis alignment.4. The method for manufacturing a semiconductor device according to claim 1 , wherein the second crystalline oxide semiconductor layer contains zinc and has c-axis alignment.5. The method for manufacturing a semiconductor device according to claim 1 , further comprising the step of performing a ...

SEMICONDUCTOR DEVICE

In a semiconductor device which conducts multilevel writing operation and a driving method thereof, a signal line for controlling on/off of a writing transistor for conducting a writing operation on a memory cell using a transistor including an oxide semiconductor layer is disposed along a bit line, and a multilevel writing operation is conducted with use of, also in a writing operation, a voltage which is applied to a capacitor at a reading operation. Because an oxide semiconductor material that is a wide gap semiconductor capable of sufficiently reducing off-state current of a transistor is used, data can be held for a long period. 1. A semiconductor device comprising: a first transistor including a first gate, a first source, and a first drain;', 'a second transistor including a second gate, a second source, and a second drain; and', 'a capacitor having one terminal electrically connected to the first gate and the second source;, 'a selection transistor, a first memory cell, and a second memory cell which are electrically connected in series between a bit line and a source line, the first and second memory cells comprisinga first signal line electrically connected to the second drain of the first memory cell and the second drain of the second memory cell;a second signal line electrically connected to the second gate of the first memory cell and the second gate of the second memory cell;a first word line electrically connected to the other terminal of the capacitor of the first memory cell;a second word line electrically connected to the other terminal of the capacitor of the second memory cell; anda selection line electrically connected to a gate of the selection transistor,wherein the bit line is electrically connected to the first drain of the first memory cell through the selection transistor,wherein the first source of the first memory cell and the first drain of the second memory cell are electrically connected to each other,wherein the source line is ...

SEMICONDUCTOR DEVICE

An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied. 1. A semiconductor device comprising:a first transistor comprising a first semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode;a first wiring over the first gate electrode;an interlayer film over the first wiring; anda second wiring over the interlayer film,wherein a portion of the first gate electrode overlaps with a first channel formation region of the first semiconductor layer,wherein the first wiring is in contact with the portion of the first gate electrode, andwherein the second wiring is in contact with the first wiring and overlaps with the portion of the first gate electrode.2. The semiconductor device according to claim 1 ,wherein each of the first wiring and the second wiring is provided between the first source electrode and the first drain electrode.3. The semiconductor device according to claim 2 ,wherein the first transistor comprises an oxide semiconductor.4. The semiconductor device according to claim 3 ,wherein a thickness of the interlayer film is greater than or equal to 10 nm and less than or equal to 100 nm.5. The semiconductor device according to claim 3 ,wherein the first wiring is configured to receive a first signal,wherein the second wiring is configured to receive a second signal, andwherein the first signal and the ...

SEMICONDUCTOR DEVICE

A semiconductor device including the following components and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a substrate; an oxide semiconductor layer over the substrate; a source electrode and a drain electrode whose end portion has a taper angle and whose upper end portion has a curved surface, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; a gate insulating layer being in contact with a part of the oxide semiconductor layer and covering the oxide semiconductor layer, the source electrode, and the drain electrode; and a gate electrode overlapping with the oxide semiconductor layer and being over the gate insulating layer. 1. A semiconductor device comprising:an insulating layer over a substrate;an oxide semiconductor layer over the substrate;a source electrode and a drain electrode whose end portion has a taper angle and whose upper end portion has a curved surface, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer;a gate insulating layer being in contact with a part of the oxide semiconductor layer and covering the oxide semiconductor layer, the source electrode, and the drain electrode; anda gate electrode overlapping with the oxide semiconductor layer and being over the gate insulating layer.2. The semiconductor device according to claim 1 , wherein the source electrode and the drain electrode are formed between the gate insulating layer and the oxide semiconductor layer.3. The semiconductor device according to claim 1 , wherein the source electrode and the drain electrode are formed between the substrate and the oxide semiconductor layer.4. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer is formed over and in contact with the insulating layer.5. The semiconductor device according to claim 1 , wherein the source electrode and the drain electrode are formed ...

SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

It is an object of the invention to provide a thin, lightweight, high performance, and low in cost semiconductor device and a display device by reducing an arrangement area required for a power supply wiring and a ground wiring of a functional circuit and decreasing a drop in power supply voltage and a rise in ground voltage. In the functional circuit of the semiconductor device and the display device, a power supply wiring and a ground wiring are formed in a comb-like arrangement, and the tips thereof are electrically connected with a first wiring, a second wiring, and a contact between the first wiring and the second wiring, thereby forming in a grid-like arrangement. The drop in power supply voltage and the rise in ground voltage can be decreased and the arrangement area can be decreased in the grid-like arrangement. 1. A display device comprising:a display portion formed on a substrate; anda functional circuit formed on the substrate,wherein a power supply wiring which supplies power supply voltage to the functional circuit and a ground wiring which supplies ground voltage to the functional circuit are formed in a grid-like arrangement.2. The display device according to claim 1 ,wherein the functional circuit comprises one selected from the group consisting of a central processing unit, a memory device, a static memory, a dynamic memory, a nonvolatile memory, an image processing circuit, and a digital signal processor.3. The display device according to claim 1 ,wherein a semiconductor thin film formed over a substrate having an insulating surface is used as an active layer of a thin film transistor.4. The display device according to claim 1 ,wherein the substrate having an insulating surface is one selected from the group consisting of a glass substrate, a quartz substrate, a plastic substrate, and an SOI substrate.5. The display device according to claim 1 , a first conductive thin film;', 'two second conductive thin films;', 'a third conductive thin film;', 'a ...