ОСВЕТИТЕЛЬНЫЙ МОДУЛЬ ДЛЯ МОДУЛЬНОЙ ОСВЕТИТЕЛЬНОЙ СИСТЕМЫ

Изобретение относится к области светотехники, а именно к осветительному модулю (20a, 20b, 20c), модульной осветительной системе (2) и способу изготовления осветительного модуля. Техническим результатом является повышение равномерности освещения. Осветительный модуль содержит плату (21), имеющую центральный участок (24) и периферийный край (22), приспособленный для соединения с периферийным краем платы другого осветительного модуля, и множество источников (23) света, расположенных на плате так, что шаг вблизи периферийного края больше, чем шаг вблизи центрального участка. Шаг между источниками света платы можно уменьшить при одновременном ослаблении восприятия любых темных областей между соседствующими осветительными модулями как прерываний (или разрывов) освещенности. 3 н. и 6 з.п. ф-лы, 3 ил.

ПОЛУПРОВОДНИКОВЫЙ ИСТОЧНИК ИЗЛУЧЕНИЯ

Изобретение относится к области оптоэлектроники, конкретно к полупроводниковым источникам излучения инфракрасного, видимого и ультрафиолетового диапазонов длин волн. Оно может найти применение при создании современных светотехнических изделий и систем. Изобретение может быть использовано также в СВЧ микроэлектронике при создании монолитных усилителей мощности и в силовой электронике при создании монолитных преобразователей. В полупроводниковом источнике излучения (ИИ) генерирующая излучение монолитная матрица p-n мезоструктур на теплопроводящей диэлектрической подложке установлена внутри кристаллодержателя, выполненного в виде устройства с высокой скоростью отбора тепла от кристалла и передачи его всей конструкции кристаллодержателя. Кристаллодержатель, содержащий диэлектрическую крышку, спаянную с металлическим основанием, вместе с матрицей p-n мезоструктур, вставленной в окно диэлектрической крышки и соединенной с ней пайкой по краям окна, образует герметичную полость, частично заполненную ...

МОДУЛЬНАЯ СБОРКА НА ОСНОВЕ СИД

Изобретение относится к осветительной системе, содержащей: плату СИД, несущую СИДы; и оптическую плату на плате СИД; причем оптическая плата выполнена из оптических модулей, расположенных рядом друг с другом согласно заранее определенным ориентациям по отношению друг к другу, причем каждый оптический модуль содержит, по меньшей мере, один оптический элемент, выполненный с возможностью быть обращенным к, по меньшей мере, одному из упомянутых СИДов и изменять параметр света, излучаемого этим, по меньшей мере, одним СИД, причем осветительная система снабжена механическими элементами защиты от неправильного обращения, выполненными с возможностью препятствовать размещению оптических модулей согласно ориентациям по отношению друг к другу, отличным от упомянутых заранее определенных ориентаций. 2 н. и 12 з.п. ф-лы, 20 ил.

СВЕТОДИОДНАЯ ЛАМПА

Полезная модель относится к области полупроводниковых приборов на основе светодиодов, а также к области освещения, и может найти применения при изготовлении светодиодных ламп заградительных огней, сигнальных огней для бакенов, башен, высоких и протяженных зданий, аэродромов, а также ламп для освещения и подсветки. Светодиодная лампа, включает средство соединения с внешней электрической сетью, элементы блока питания, основание, крышку и полую цилиндрическую плату со светодиодами на внешней поверхности платы, причем крышка соединена крепежом с основанием и фиксирует вертикально установленную на основание полую цилиндрическую плату, во внутренней полости которой элементы блока питания размещены на части платы, загнутой внутрь полости. 1 илл.

СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО И АДАПТИВНАЯ СИСТЕМА ФАР ДАЛЬНЕГО СВЕТА

Изобретение относится к светоизлучающему устройству и адаптивной системе фар дальнего света. Светоизлучающее устройство включает в себя подложку, имеющую первую основную поверхность; множество первых схем соединений, которые сформированы на первой основной поверхности и простираются в первом направлении; множество вторых схем соединений, которые сформированы на первой основной поверхности, простираются во втором направлении и сегментированы в каждой второй схеме соединений; и множество светоизлучающих элементов, оснащенных первым электродом и вторым электродом, расположенными на одной и той же лицевой стороне полупроводниковой сложенной слоями структуры, причем множество светоизлучающих элементов расположены вдоль второго направления, при этом первый электрод подсоединен напротив первой схемы соединений, второй электрод имеет первую соединительную часть и вторую соединительную часть, которая связана с первой соединительной частью, и первая соединительная часть и вторая соединительная часть ...

СВЕТОДИОДНОЕ УСТРОЙСТВО

Изобретение относится к электронной технике. Устройство содержит подложку, один или более светоизлучающих кристаллов с омическими контактами, заданную топологию разводки связей между светоизлучающими кристаллами на подложке, крышку из прозрачного материала, внешняя поверхность которой выполнена в виде формы вращения, а внутренняя имеет полости, в каждой из которых на соответствующем месте подложки размещен светоизлучающий кристалл со своими элементами подсоединения. По крайней мере, в одну из полостей крышки введена иммерсионная дисперсионная среда из рассеивающих свет частиц. В подложке предусмотрены два отверстия, размещенные на периферии полости и предназначенные для заполнения полости иммерсионной дисперсионной средой. Размер этих частиц - от 1 до 10 мкм. В состав иммерсионной дисперсионной среды могут быть добавлены частицы люминофора. Предложенная конструкция повышает технологичность сборки светодиодных устройств и эффективность светоотдачи. 2 з.п. ф-лы, 2 ил., 1 табл.

СВЕТОДИОДНЫЕ ЭКРАННЫЕ ИЛИ ОСВЕТИТЕЛЬНЫЕ СРЕДСТВА С ГИБКОЙ ПЛЕНОЧНОЙ КОНСТРУКЦИЕЙ

Группа изобретений относится к светодиодным отображающим и осветительным устройствам, выполненным в виде гибкой тонкопленочной конструкции. Экранное устройство содержит по меньшей мере один модуль. Каждый модуль содержит слоистую конструкцию из по меньшей мере одного слоя изготовленного из полимера. Слоистая конструкция содержит светодиодную слоистую конструкцию по меньшей мере из одного светодиодного слоя, который содержит множество светодиодов. Модуль содержит по меньшей мере два слоя, наложенные друг на друга в каждом модуле с образованием слоистой конструкции для одного модуля. В случае выполнения экранного устройства из двух модулей модули соединены друг с другом. Слоистая конструкция является частично гибкой. Устройство содержит множество сквозных отверстий, выполненных по экранному устройству, для увеличения прозрачности устройства, и/или для обеспечения полостей для светодиодов смежного слоя, и/или для обеспечения возможности проникновения воздуха и/или воды через экранное устройство ...

ЭЛЕКТРИЧЕСКИЕ ЗУБНЫЕ ЩЕТКИ С ПОДСВЕТКОЙ И СПОСОБЫ ИХ ИСПОЛЬЗОВАНИЯ

... 1. Зубная щетка, содержащая ручку, головку и суженную часть, проходящую между ручкой и головкой, при этом зубная щетка содержит далее: ! держатель щетины, расположенный на головке; ! светоизлучающий элемент, расположенный в держателе щетины, причем этот светоизлучающий элемент выступает через отверстие в держателе щетины, при этом светоизлучающий элемент излучает свет с длиной волны между примерно 410 и примерно 550 нм, имеющий плотность потока мощности менее 100 мВт/см2. ! 2. Зубная щетка по п.1, в содержащая множество пучков щетинок, выступающих от поверхности держателя щетины, при этом пучки щетинок упомянутого множества включают в себя эластомерные материалы. ! 3. Зубная щетка по п.2, в которой эластомерные материалы выбраны из группы, состоящей из натурального каучука, синтетического каучука, полиолефинов, полиэфирамидов, сложных полиэфиров, стирольных полимеров, полиуретанов и их сочетаний. ! 4. Зубная щетка по п.1, в которой ручка содержит полую часть с размещенным в ней двигателем ...

СПОСОБ НАНЕСЕНИЯ УСТРОЙСТВА ОСВЕЩЕНИЯ НА ПОВЕРХНОСТЬ И ПОВЕРХНОСТЬ ОСВЕЩЕНИЯ

LED light part i.e. energy-efficient/energy-saving lamp, has LED chips including color temperatures from color temperature spectrum of specific Kelvin combined with LED chips with low color temperature and LED chips with high red/blue parts

The light part i.e. energy-saving lamp, has multiple LED chips with different color temperatures from color temperature spectrum of 2160-3300 Kelvin combined with LED chips with low color temperature and LED chips with high red part and high blue part. LED chips with high color temperature are provided on a circuit board. Group of LED chips are arranged in rectangular form. The LED chips with the high color temperature are switched-off by canceling power. The LED chips with low color temperature are set under voltage, and reduce power during dimming process.

Lichtquelle und Verfahren zur Montage lichtemittierender Dioden

μ-LED, μ-LED ANORDNUNG, DISPLAY UND VERFAHREN ZU SELBEN

Beschichtung/Abdeckung für optoelektronische Bauteile

LED-Modul, welches aufweist: einen LED-Chip und eine auf einem Board befestigten Beschichtung/Abdeckung, wobei die Beschichtung/Abdeckung einen nicht transparenten äußeren Damm (2) aufweist, eine zentrale Füllung (3), welche in den äußeren Damm (2) gefüllt ist, wobei der äussere Damm (2) ein Silikon-basiertes gehärtetes Harz aufweist und die zentrale Füllung (3) mit dem äußeren Damm (2), eine Einheit bildend, verbunden ist.

ANORDUNG ZUM LOESBAREN BEFESTIGEN VON MODULEN AUF EINEM MODULTRAEGER.

The modules (11) are fixed onto the module carrier (13) by an attachment device (7) which is inclined w.r.t. the contact surfaces of the modules and carrier. The carrier has a supporting surface (134) perpendicular to the contact surface on which the module sits. Fixing pins (117) let into the module are in contact with the supporting surface (134) when the module is fixed onto the carrier. The attachment device (7) is mounted in a bore (135) of different dia. from its own. It has a screw-spring connection joined to the module carrier and module. One or more modules may be clamped on the carrier between two stop elements.

Beleuchtungsvorrichtung mit Substratkörper

Die vorliegende Erfindung betrifft eine Beleuchtungsvorrichtung (1) mit einem Substratkörper (2) aus Kunststoffmaterial, wobei der Substratkörper (2) elektrisch leitfähig und so auch in seiner thermischen Leitfähigkeit verbessert ist; auf dem Substratkörper (2) ist über eine elektrisch isolierende Beschichtung (4) dazu beabstandet ein optoelektronisches Bauelement (5) angeordnet, wobei die Beschichtungsdicke nicht mehr als 0,5 mm beträgt, sodass die Wärmeabfuhr in den Substratkörper (2) nicht blockiert wird.

Electrolytically produced hydrogen using solar energy

Solar cells are mounted on a ship, with sea water used as the electrolyte. The produced hydrogen is compressed for storage on board. A ship has solar cells that supply power not only to electrolyze the sea water and produce hydrogen but also to provide power to run compressors and to navigate the ship. Power for this is supplied directly as electrical energy or indirectly by burning some of the hydrogen. The solar cells occupy the major portion of the deck surface and are divided into a number of sets. Each set contains three stacked plates. The bottom plate is firmly attached to the ship and the other two may be fanned out about horizontal axes to provide a maximum area open to the sun. The plates can be retracted in inclement weather. Further solar collectors can be floated off-board. Sea water is filtered and desalinated before being passed to the electrolysis cells. The hydrogen produced there is compressed and stored in spherical pressure vessels that are placed both above and below ...

Housing for LED light module, has plate-like inner region serving as assembled coverage areas comprising sorting regions surrounded by separation lines, where separation lines are formed at side turned towards semiconductor light module

The housing (13) has a plate-like inner region (18) serving as assembled coverage areas comprising sorting regions surrounded by separation lines. The separation lines are designed as a recess i.e. longitudinal groove, and vertical continuous slots. The separation lines are formed at a side turned towards a semiconductor light module (11). The sorting region comprises an annular form that circulates a light passage aperture in sections. The plate-like inner region is surrounded by an annular, dome-shaped outer region (17). Independent claims are also included for the following: (1) a semiconductor light module (2) a method for manufacturing a housing.

Optoelektronisches Modul und Verfahren zur Herstellung eines optoelektronischen Moduls

Es wird ein optoelektronisches Modul (100) angegeben umfassend mindestens einen zum Emittieren elektromagnetischer Strahlung vorgesehenen Halbleiterchip (10) und mindestens eine Haltevorrichtung (20), welche dazu ausgebildet ist, ein Bauelement (50) zur Kodierung mindestens eines optischen oder elektronischen Parameters des optoelektronischen Moduls (100) zu fixieren. Außerdem wird ein Verfahren zur Herstellung des optoelektronischen Moduls (100) angegeben.

Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Blitzlichtbeleuchtung für ein tragbares Gerät

Die Erfindung betrifft ein optoelektronisches Bauelement (100) aufweisend einen Halbleiterchip (2) zur Erzeugung einer Primärstrahlung im blauen Spektralbereich, ein Konversionselement (4), das im Strahlengang des Halbleiterchips (2) angeordnet ist und zur Erzeugung einer Sekundärstrahlung aus der Primärstrahlung eingerichtet ist, wobei das Konversionselement (4) zumindest einen ersten Leuchtstoff (9) als Konversionsmaterial umfasst, wobei der erste Leuchtstoff (9) (La1-xCax)3Si6(N1-yOy)11:Ce3+ mit 0 ≤ x ≤ 1 und 0 ≤ y ≤ 1 ist, wobei eine aus dem Bauelement (100) austretende Gesamtstrahlung (G) weißes Mischlicht ist.

OPTOELEKTRONISCHES BAUELEMENT

FILAMENT MIT LICHTEMITTIERENDEN HALBLEITERCHIPS, LEUCHTMITTEL UND VERFAHREN ZUR HERSTELLUNG EINES FILAMENTS

Die Erfindung betrifft ein Filament mit einer Mehrzahl von lichtemittierenden Halbleiterchips, die auf einem Träger angeordnet sind. Die Halbleiterchips sind elektrisch kontaktiert. Der Träger weist einen Querschnitt mit einer Breite und einer Höhe auf, wobei die Breite größer ist als die Höhe und maximal zehnmal so groß ist wie ein Halbleiterchip. Der Träger weist eine Wärmeleitfähigkeit von mindestens 27 Watt pro Meter und Kelvin auf. Der Träger weist an der Oberfläche eine Reflektivität von mindestens 75 %, bevorzugt mindestens 85 % und insbesondere bevorzugt mindestens 95 % auf. Außerdem betrifft die Erfindung ein Leuchtmittel mit einem solchen Filament, einem Kolben aus einem transparenten Material und einer elektrischen Kontaktierung, bei dem die elektrische Kontaktierung mit dem Filament elektrisch leitfähig verbunden ist und bei dem der Kolben mit einem Gas gefüllt ist. Ferner betrifft die Erfindung ein Verfahren zur Herstellung eines Filaments mit den Schritten: Bereitstellen eines ...

Lichtmischungs-Multichip-Gehäuseanordnung

Lichtmischungs-Multichip-Gehäuseanordnung, aufweisend: ein Schaltungssubstrat (1); ein erstes Leuchtmodul (2), das eine Mehrzahl von ersten Leuchtelementen (20) aufweist, die sich auf dem Schaltungssubstrat (1) befinden und elektrisch mit diesem verbunden sind; ein erstes Einkapselungskolloid (3), das auf dem Schaltungssubstrat (1) angeordnet ist und der Überdeckung der ersten Leuchtelemente (20) dient; ein zweites Leuchtmodul (4), das eine Mehrzahl von zweiten Leuchtelementen (40) aufweist, die sich auf dem Schaltungssubstrat (1) befinden und elektrisch mit dem Schaltungssubstrat (1) verbunden sind, wobei das erste Leuchtmodul (2) und das erste Einkapselungskolloid (3) von den zweiten Leuchtelementen (40) umschlossen sind; und ein zweites Einkapselungskolloid (5), das auf dem Schaltungssubstrat (1) angeordnet ist und der Überdeckung des ersten Leuchtmoduls (2), des zweiten Leuchtmoduls (4) und des ersten Einkapselungskolloids (3) dient.

LED-Beleuchtungseinheiten und -Anordnungen mit Kantenanschlüssen

LED-Lichteinheit, welche enthält:eine Platte (10);eine Mehrzahl von diskreten LED-Lichtquellen (12), welche auf einer Oberfläche von der Platte (10) sind und darüber hinweg verteilt sind, und mit elektrischen Kontaktflächen (19, 22, 24, 26, 28) entlang eines Kantenbereiches der Platte (10) elektrisch verbunden sind; undeinen Kantenanschluss (100, 200), welcher eine Mehrzahl von Kontakten (110) enthält, welche mit einer Mehrzahl von flexiblen Drähten (102) verbunden sind, welche sich von dem Kantenanschluss (100) fort erstrecken, wobei der Kantenanschluss (100, 200) zu einer lösbaren Verbindung an einer Kante von der Platte (10) aufgebaut ist, so dass die Kontakte (110) direkt mit den Kontaktflächen (19, 22, 24, 26, 28) verbunden sind, und die Kontakte (110) die flexiblen Drähte (102) des Kantenanschlusses (100, 200) elektrisch mit den LED-Lichtquellen (12) verbinden, wobei der Kantenanschluss (100, 200) einen Körper mit einer Mehrzahl von darin ausgesparten Kanälen (120, 220) enthält, wobei ...

LED vom integrierten Typ und Herstellungsverfahren derselben

LED vom integrierten Typ mit: einer Basisplatte, die eine vorinstallierte Schaltung aufweist und einer Vielzahl von nicht verpackten LED-Flip-Chips, während P- und N-Elektroden der nicht verpackten LED-Flip-Chips (40, 50, 80, 90, 91, 92) an die Schaltung der Basisplatte (41, 70, 94) angeschlossen, hiermit leitend verbunden und hieran fixiert sind, dadurch gekennzeichnet, dass die nicht verpackten LED-Flip-Chips (90, 91, 92) Rot-, Blau- und Grün-LED-Chips sind, dass die Basisplatte eine Mehrschichtbasisplatte (94) ist und dass die Rot-, Blau- und Grün-LED-Chips (90, 91, 92) auf Leitern (93) aufeinandergeschichtet sind, wobei ihre Leuchtbereiche sich auf der Basisplatte (94) überlappen.

System-in-Package für eine LED-Antriebs- und LED-Beleuchtungsvorrichtung einschließlich derselben

Lichtemittierende Dioden (LED) Beleuchtungsvorrichtung, umfassend:- mindestens eine LED-Gruppe, die eine Vielzahl von LEDs umfasst;- einen Gleichrichter, der konfiguriert ist, um eine Wechselstrom(AC)-Spannung gleichzurichten und eine Antriebsspannung für die mindestens eine LED-Gruppe zu erzeugen; und- ein System-in-Package (SIP), das konfiguriert ist, um die mindestens eine LED-Gruppe anzutreiben und zu steuern, wobei das SIP mit der mindestens einen LED-Gruppe und dem Gleichrichter verbunden ist, wobei das SIP ein Antriebsmodul, ein Funktionsmodul und einen ersten Widerstand umfasst, der auf einem einzelnen Substrat angeordnet ist.

Halbleiterlichtquelle mit einem ersten und zweiten Leuchtdiodenchip sowie einem ersten und zweiten Leuchtstoff

Optische Anordnung und Anzeigegerät

VORRICHTUNG MIT LEITERRAHMEN UND VERFAHREN ZUR HERSTELLUNG EINER MEHRZAHL VON VORRICHTUNGEN

Anordnung von lichtemittierenden Dioden.

Mehrfachleuchtdiodenanordnung

Die vorliegende Erfindung beschreibt ein strahlungsemittierendes Halbleiterbauelement mit einer Mehrzahl von Halbleiterkörpern (10, 20, 30), die jeweils eine aktive Zone (11, 21, 31) aufweisen und im Betrieb Licht mit jeweils einer unterschiedlichen Zentralwellenlänge (lambda¶10¶, lambda¶20¶, lambda¶30¶) und einer zugeordneten spektralen Bandbreite (DELTAlambda¶10¶, DELTAlambda¶20¶, DELTAlambda¶30¶) emittieren, so dass durch die Mischung dieses Lichts der Eindruck weißen Lichts entsteht. Bei mindestens einem der Halbleiterkörper (10) variiert die Emissionswellenlänge in der aktiven Zone (11) in einer vorgegebenen Weise, so dass dadurch die spektrale Bandbreite (DELTAlambda¶10¶) des emittierenden Lichts erhöht ist.

Lichtemittierende Vorrichtung und Beleuchtungssystem

Eine lichtemittierende Vorrichtung, umfassend: ein Gehäuse (10, 210), mit einer Ausnehmung (15, 215, 215a), eine erste Elektrode (31, 231) und eine zweite Elektrode (32, 232) auf dem Gehäuse (10, 210), eine lichtemittierende Einrichtung (20, 220), die in der Ausnehmung (15, 215) angeordnet ist und elektrisch mit der ersten und der zweiten Elektrode (31, 32, 231, 232) verbunden ist, und ein Vergusselement (50, 60, 250, 260), das in der Ausnehmung (15) angeordnet ist, wobei das Vergusselement (50, 60, 250, 260) ein fluoreszierendes Material umfasst, wobei eine Höhe „a” der lichtemittierenden Einrichtung (20, 220) und eine Tiefe „y” der Ausnehmung (15, 215, 215a) einem Verhältnis von 1,5a ≤ y ≤ 3,0a genügt und wobei die Höhe „a” und ein horizontaler Abstand „x” von einem oberen äußeren Rand der lichtemittierenden Einrichtung (20, 220) zu einer inneren Oberfläche des Gehäuses, das die Ausnehmung ausbildet, einem Verhältnis von 0,5a...

Modul mit wenigstens zwei Halbleiterchips

Die Erfindung betrifft ein Modul mit wenigstens zwei Halbleiterchips zur Erzeugung von Licht, mit einem Träger, wobei der Träger wenigstens zwei nebeneinander angeordnete Trägerelemente aufweist, wobei die Trägerelemente über eine mechanische Verbindung flexibel miteinander verbunden sind, wobei jeweils ein Halbleiterchip auf einem Trägerelement angeordnet ist, und wobei eine Leiterbahn vorgesehen ist, die mit den zwei Halbleiterchips elektrisch verbunden ist, wobei sich die Leiterbahn über die zwei Trägerelemente erstreckt.

Verfahren zur Herstellung eines Wellenlängenkonversionselements, Wellenlängenkonversionselement und Bauelement aufweisend das Wellenlängenkonversionselement

Es wird ein Verfahren zur Herstellung eines Wellenlängenkonversionselements angegeben, bei dem eine Wellenlängenkonversionsschicht bereitgestellt, ihre Oberfläche mit einem Plasma behandelt und die Wellenlängenkonversionsschicht gestanzt wird. Weiterhin werden eine Wellenlängenkonversionsschicht und ein optoelektronische Bauelement mit einer Wellenlängenkonversionsschicht angegeben.

Electrical signal light unit has light emitting diodes on the outer surface of a ring with a lens unit

The signal light unit is in the form of a ring of material (c) and around the outer periphery are light emitting diodes, LED, (b) at uniform spacing. The output of the led devices is directed through a hemispherical section lens ring (a) to achieve uniform distribution.

Lichtemittierendes Bauteil

Lichtemittierendes Bauteil mit- zumindest zwei strahlungsemittierenden Halbleiterchips erster Art (1), die dazu ausgebildet sind, im Betrieb elektromagnetische Strahlung zu emittieren,- zumindest einem strahlungsemittierenden Halbleiterchip zweiter Art (2), und- einer Lichtaustrittsfläche (200) an einer Lichtaustrittsseite (200a) des lichtemittierenden Bauteils, wobei- die strahlungsemittierenden Halbleiterchips erster Art (1) zwischen dem zumindest einen strahlungsemittierenden Halbleiterchip zweiter Art (2) und der Lichtaustrittsfläche (200) angeordnet sind,- jeder der strahlungsemittierenden Halbleiterchips erster Art (1) eine Halbleiterschichtenfolge (10) mit einer Stapelrichtung (R1) aufweist,- die Stapelrichtung (R1) eines jeden strahlungsemittierenden Halbleiterchips erster Art (1) parallel zur Lichtaustrittsfläche (200) des Bauteils verläuft,- der zumindest eine strahlungsemittierende Halbleiterchip zweiter Art (2) eine Halbleiterschichtenfolge (20) mit einer Stapelrichtung (R2) ...

Beleuchtungsbaugruppe

Eine Beleuchtungsbaugruppe 1 enthält eine Beleuchtungslichtquelleneinheit 2, die konfiguriert ist zum Emittieren von weißem Licht mit einer korrelierten Farbtemperatur von 4000 K oder weniger, einer Farbabweichung Duv von ±20 oder weniger, einem S/P-Verhältnis von 1,5 oder darüber als Verhältnis der skotopischen Luminanz zur photopischen Luminanz und einem mittleren Farbwiedergabeindex RA von 60 oder darüber. Weiterhin enthält die Beleuchtungsbaugruppe 1 eine Beleuchtungslichtquelleneinheit 200, die konfiguriert ist zum Emittieren von weißem Licht mit einer korrelierten Farbtemperatur über 4000 K und unter 7000 K, einer Farbabweichung Duv von ±18 oder weniger und einem S/P-Verhältnis von 1,9 oder darüber.

Modul für eine Videowand

Die Erfindung betrifft ein Modul für eine Videowand, mit einer Vielzahl von Bild-pixeln, wobei ein Bildpixel von wenigstens einem ersten und einem zweiten Leuchtchip gebildet wird, wobei jeder Leuchtchip einen ersten und einen zweiten elektrischen Anschluss aufweist, wobei der erste Leuchtchip eines Bildpixels mit dem ersten elektrischen Anschluss mit einer ersten Stromleitung verbunden ist, wobei der erste Leuchtchip eines Bildpixels mit dem zweiten elektrischen Anschluss mit einer dritten Stromleitung verbunden ist, wobei der zweite Leuchtchip eines Bildpixels mit dem ersten elektrischen Anschluss mit einer zweiten Stromleitung verbunden ist, und wobei der zweite Leuchtchip eines Bildpixels mit dem zweiten elektrischen Anschluss mit einer vierten Stromleitung verbunden ist.

Elektronisches Bauelement

Die vorliegende Erfindung betrifft ein elektronisches Bauelement (1), das ein Trägermaterial (2) und mehrere Leiterbahnen aufweist. Das Trägermaterial (2) weist mehrere Befestigungsbereiche (3) für Leichtmittel (4) auf, die über erste (4) und zweite Leiterbahnen (5) mit mindestens einem Anschlussbereich (8) verbunden oder verbindbar sind. In dem mindestens einem Anschlussbereich (8) sind die ersten (4) und zweiten Leiterbahnen (5) zusammengeführt, wobei mehrere der ersten Leiterbahnen (4) jeweils mindestens einen ersten Leiterbahnastabschnitt (4a) und mindestens einen Leiterbahnstammabschnitt (4b) aufweisen und wobei mehrere der zweiten Leiterbahnen (5) jeweils mindestens einen zweiten Leiterbahnastabschnitt (5a) und mindestens einen Leiterbahstammabschnitt (5b) aufweisen. Die ersten und/oder zweiten Leiterbahnstammabschnitte (4b, 5b) bilden mindestens einen Leiterbahnstammbereich (6). Erste und zweite Leiterbahnastabschnitte (4a, 5a) der ersten und zweiten Leiterbahnen (4, 5), die entlang ...

Heat derivative structure for LED construction, has LED crystals provided on metallic carrier, and base board provided with printed conductor layer, where LED crystals on metallic carrier are connected with conductor layer

The structure has several LED crystals (4) provided on a metallic carrier, and a base board (1) provided with a printed conductor layer (2), where the LED crystals on the metallic carrier are connected with the conductor layer. A bond wire (41) provides an electrical interconnection with the conductor layer. The base board is made of a composite material with graphite or made of a ceramic composite material, where the LED crystals are provided on the metallic carrier by melting via radio frequency or ultrasound.

Lichtquellenvorrichtung und Lichtquellenanordnung

Eine Lichtquellenvorrichtung (100) weist auf eine Lichtquelle (200); einen mit der Lichtquelle (200) gekoppelten Eingangsanschluss (108) zum Zuführen einer Eingangsspannung; einen mit der Lichtquelle (200) gekoppelten Ausgangsanschluss (108) zum Bereitstellen einer Ausgangsspannung; einen ersten Überbrückungsanschluss (114) und einen zweiten Überbrückungsanschluss (114); und eine mit der Lichtquelle (200) gekoppelte Leiterplatte. Die Leiterplatte (102) weist mindestens eine Leiterbahn (402) auf, die mit dem ersten Überbrückungsanschluss (114) und dem zweiten Überbrückungsanschluss (114) gekoppelt ist zum die Lichtquelle (200) überbrückenden Führen eines elektrischen Potentials von dem ersten Überbrückungsanschluss (114) zu dem zweiten Überbrückungsanschluss (114).

Light emitting module with multiple LEDs - whose light emitting faces are so arranged as to be aligned in same direction

The LEDs are of different emission wavelength type and are located in a single housing. The LED light emitting faces are so arranged as to be aligned in the same direction. Pref. the LEDs are fitted in step-like layers such that the light emitting faces are concentric, pointing to the input end face of an optical fibre. The light emitting faces may be formed as reflecting mirrors, by which the light from each diode is optically focussed to the same focal point. The light emitting faces may be inwards inclined, causing the light portions from each diode to intersect.

LED lighting device, has luminescence conversion element absorbing portion of blue light and converting blue light into secondary light, and additional set of light sources constructed of LEDs with wavelength greater than preset value

The device has a set of light sources constructed of blue LEDs with an added luminescence conversion element, where blue light comprises predominating wavelength in the region between 430 nanometer (nm) and 460 nm. The luminescence conversion element absorbs portion of the blue light and converts the blue light into secondary light with peak wavelength ranging between 520 nm and 545 nm. Additional set of light sources is constructed of LEDs with predominating wavelength greater than 600 nm.

LED-Modul mit einer LED

Die vorliegende Erfindung betrifft ein LED-Modul mit einer LED (3) mit einer LED-Anschlussfläche (9) und einem Substrat mit einer Kontaktierungsstruktur (2) mit einer Kontaktfläche (8), wobei sich zwischen LED-Anschlussfläche (9) und Kontaktfläche (8) ein Bonddraht (13) erstreckt und diese beiden Flächen (8, 9) hinsichtlich ihres (vertikalen) Abstands in Abstandsrichtung (4) so angepasst sind, dass sie näherungsweise auf derselben Höhe liegen, damit beim Platzieren des Bonddrahts (13) ein entsprechend geringer Abstand in der Abstandsrichtung (4) überbrückt werden muss und eine Mehrzahl LEDs (3) so (lateral) näher beisammen angeordnet werden können.

Bauelement

Die vorliegende Erfindung betrifft ein Bauelement (1), aufweisend ein lichtemittierendes Element (2), und eine auf dem lichtemittierenden Element (2) angeordnete strukturierte Schicht (6) mit einer optischen Funktionalität.

Bauelement mit Begrenzungselement

Es wird ein Bauelement (10) mit einem Halbleiterchip (1), einem Gehäuse (9) und einer reflektierenden Schicht (2) angegeben, wobei das Gehäuse einen Formkörper (90) und einen Grundkörper (91) aufweist, wobei der Formkörper den Grundkörper oder eine Kavität (8) des Gehäuses lateral umschließt und verschieden von der reflektierenden Schicht ist. Der Hauptkörper weist eine in Draufsicht von dem Formkörper unbedeckte Freifläche (80A) auf. Die Freifläche oder eine Bodenfläche (80) der Kavität umfasst eine Montagefläche (81) für den Halbleiterchip, wobei der Halbleiterchip auf der Montagefläche angeordnet ist. Die Bodenfläche oder die Freifläche ist bereichsweise von der reflektierenden Schicht bedeckt, wobei die Montagefläche von einem Begrenzungselement (3) zumindest bereichsweise umschlossen ist, das an die reflektierende Schicht angrenzt und dazu eingerichtet ist, eine Bedeckung des Halbleiterchips durch die reflektierende Schicht zu verhindern.

BAUTEIL FÜR EIN DISPLAY UND VERFAHREN ZUR HERSTELLUNG EINES BAUTEILS

Es wird ein Bauteil (100) mit einem Träger (10) und einer Mehrzahl von Halbleiterchips (2) angegeben, bei dem der Träger eine einlagig ausgeführte und elektrisch leitfähige Trägerschicht (1) aufweist, wobei die Trägerschicht (1) strukturiert ausgebildet ist und eine Mehrzahl von Teilschichten (1A, 1B) aufweist. Die Trägerschicht weist eine Montagefläche (1M) auf, auf der die Halbleiterchips (2) angeordnet sind, wobei die Halbleiterchips (2) von der Trägerschicht (1) mechanisch getragen und mit den Teilschichten (1A, 1B) elektrisch leitend verbunden sind. Der Träger (10) weist eine gemeinsame Elektrode für Halbleiterchips (2) einer Gruppe aus mehreren Halbleiterchips (2) auf, wobei die gemeinsame Elektrode durch eine der Teilschichten (1A, 1B) oder durch mehrere miteinander im elektrischen Kontakt stehende Teilschichten (1A, 1B) der Trägerschicht (1) gebildet ist.Des Weiteren wird ein Verfahren zur Herstellung eines solchen Bauteils (100) angegeben.

Verfahren zum Herstellen einer optoelektronischen Baugruppe und optoelektronische Baugruppe

In verschiedenen Ausführungsbeispielen wird ein Verfahren zum Herstellen einer optoelektronischen Baugruppe (12) bereitgestellt, bei dem ein optoelektronisches Bauelement (16) auf einem Träger (14) angeordnet wird. Elektrische Anschlüsse des optoelektronischen Bauelements (16) werden mit dazu korrespondierenden elektrischen Kontakten des Trägers (14) elektrisch gekoppelt. Auf einer von dem Träger (14) abgewandten ersten Seite des optoelektronischen Bauelements (16) wird ein Dummy-Körper (20) angeordnet. Auf dem Träger (14) wird ein Vergussmaterial (22) angeordnet, das zumindest teilweise das optoelektronische Bauelement (16) und zumindest teilweise den Dummy-Körper (20) umgibt. Der Dummy-Körper (20) wird, nachdem das Vergussmaterial (22) formfest ist, entfernt, wodurch eine Ausnehmung (23) entsteht, die zumindest teilweise von dem formfesten Vergussmaterial (22) umgeben ist. Ein optisch funktionelles Material (24) wird in die Ausnehmung (23) gefüllt.

Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils

Es umfasst das optoelektronische Halbleiterbauteil (1) einen Träger (2). Der Träger (2) beinhaltet einen Mikrocontroller (26) zu einer elektrischen Adressierung und Ansteuerung des Halbleiterbauteils (1). Mindestens ein optoelektronischer Halbleiterchip (3), der zur Erzeugung von Licht eingerichtet ist, ist an einer Trägeroberseite (23) des Trägers (2) angebracht und mit dem Mikrocontroller (26) elektrisch verbunden. Das Halbleiterbauteil (1) weist wenigstens drei elektrische Kontaktstellen (4) auf, wobei zumindest zwei der Kontaktstellen (4) mit dem Mikrocontroller (26) verbunden sind. Wenigstens ein Optikkörper (5) zu einer geometrischen und/oder Spektralen Strahlformung befindet sich direkt oder indirekt an der Trägeroberseite (23).

Illuminating element for illuminating food counters has semiconductor chips arranged on a conducting support material and controlled by conducting paths

Illuminating element has semiconductor chips (12) arranged on a conducting support material and controlled by conducting paths. Each chip is arranged in a recess (11) in the surface of the support as reflector enclosing the chip. Preferred Features: The recess is filled with a light-permeable cast material (15). The cast material contains a converter powder made of yttrium aluminate doped with cerium.

Beleuchtungseinrichtung für eine Kamera oder einen optischen Sensor

Beleuchtungseinrichtung (8), aufweisend- erste Leuchtdiodenchips (H11, H21, H31, H41, H51 .... H161), die um eine Mittelachse (M) herum entlang einer virtuellen Außenlinie (A1) einer ersten geometrischen Figur angeordnet sind,- zweite Leuchtdiodenchips (H12, H 22, H 32, H42, H52 .... H162), die um die Mittelachse (M) herum entlang einer virtuellen Außenlinie (A2) einer zweiten geometrischen Figur (A2) angeordnet sind,- dritte Leuchtdiodenchips (H13, H23, H33, H43, H53 ... H163), die um die Mittelachse (M) herum entlang einer virtuellen Außenlinie (A3) einer dritten geometrischen Figur angeordnet sind, wobei jeder der Leuchtdiodenchips an einer Anschlusstelle (3) auf dem Leuchtdiodenchip mit einem Bonddraht (4) verbunden ist, wobei sich die Anschlusstelle (3) in einem Randbereich (6) des Leuchtdiodenchips befindet,wobei die Leuchtdiodenchips in mehreren Gruppen (G1, G2, G3, G4 ...G16) derart gruppiert sind, dass eine Gruppe (G1) jeweils einen der ersten Leuchtdiodenchips (H11), einen der ...

OPTOELEKTRONISCHES BAUELEMENTEGEHÄUSE UND VERFAHREN

Die Erfindung betrifft ein Verfahren zur Herstellung eines optoelektronischen Bauelements, bei dem ein Leiterrahmen (10) mit zumindest einem ersten Abschnitt und einem davon beabstandeten zweiten Abschnitt mit jeweils wenigstens 2 Auflagebereich (14) bereitgestellt wird, wobei der Auflagebereich (14) jeweils zumindest teilweise von einer Vertiefung (11) umgeben sind. Ein lichtemittierender Halbleiterkörpers (20r, 20b, 20g) wird auf den Auflagebereich (14) eines jeden Abschnitts aufgebracht und die Abschnitte zur Bildung einer Vielzahl von Chipgruppen (1), insbesondere Chipgruppen gleicher Bauweise getrennt. Anschließend wird ein Träger (3) bereitgestellt, der eine Vielzahl voneinander beabstandete Bereiche aufweist, die jeweils Kontaktelemente (33) umfassen. Die Chipgruppe wird in oder auf jeweils einen der Vielzahl voneinander beabstandeten Bereiche des Trägers aufgebracht und kontaktiert. Dann werden die Bereiche vereinzelt.

OPTOELEKTRONISCHES BAUELEMENT, PIXEL, DISPLAYANORDNUNG UND VERFAHREN

LED-Lampenanordnung

LED-Lampenanordnung, aufweisend: ein Substrat (100); eine Mehrzahl von Kalt/Weißlicht-Leuchtdioden (200), die auf dem Substrat (100) angeordnet sind; und eine Mehrzahl von Leuchtdioden (300), die auf dem Substrat (100) angeordnet sind, wobei die Wellenlänge der Leuchtdiode (300) bei 580 bis 660 nm liegt, und wobei eine Vermischung von aus den Kalt/Weißlicht-Leuchtdioden (200) und den Leuchtdioden (300) ausgesendeten Lichtern stattfindet.

Pendelleuchte mit einer Lichtquelle zur Erzeugung einer indirekten Beleuchtung

Pendelleuchte aufweisend – ein längliches Trägerelement (1), das sich entlang einer Längsachse (L) erstreckt, – eine, an dem Trägerelement (1) angeordnete, Lichtquelle (2) zur Erzeugung einer nach oben (o) gerichteten indirekten Beleuchtung, dadurch gekennzeichnet, dass die Lichtquelle (2) einen ersten Abschnitt (21) aufweist, der sich mit Bezug auf die Längsachse (L) über einen ersten Längsbereich (L1) erstreckt, sowie einen zweiten Abschnitt (22), der sich mit Bezug auf die Längsachse (L) über einen zweiten Längsbereich (L2) erstreckt, wobei der zweite Abschnitt (21) auf einem höheren Niveau angeordnet ist als der erste Abschnitt (22) und dabei der erste Abschnitt (21) und der zweite Abschnitt (22) als Teile einer Baueinheit (3) ausgestaltet sind.

Lichtquelle vom Typ einer Glühbirne

Eine Lichtquelle vom Typ einer Glühbirne, bestehend aus: einer Kugel, die Licht passieren lässt; und mindestens einem in der Kugel angeordneten Licht emittierender Leuchtfaden, wobei der Licht emittierende Leuchtfaden umfasst: ein Substrat mit n (n ist eine natürliche Zahl gleich oder größer als 2) flachen Abschnitten und n-1 biegsamen Abschnitten, die zwischen den flachen Abschnitten angeordnet sind; eine Vielzahl von lichtemittierenden Chips, die auf den flachen Abschnitten angeordnet sind; eine Schicht aus fluoreszierender Substanz, die einen oder mehrere lichtemittierende Chips bedeckt und eine Wellenlänge des Lichts von dem lichtemittierenden Chip umwandelt; und eine Verbindungsleitung, die auf den flachen Abschnitten angeordnet ist und die benachbart zueinander liegenden lichtemittierenden Chips zwischen den benachbarten lichtemittierenden Chips elektrisch verbindet.

Fahrzeugleuchte unter Verwendung einer lichtemittierenden Halbleitervorrichtung

Fahrzeugleuchte (10), die aufweist: mehrere lichtemittierende Halbleitermodule, die vertikal miteinander gestapelt sind und die ein Substrat (310) und mehrere auf dem Substrat (310) angeordnete lichtemittierende Halbleitervorrichtungen (150, 250) haben; und Trennwände (410), die zwischen den lichtemittierenden Halbleitervorrichtungen (150, 250) ausgebildet sind, und in einer Dickenrichtung durch jedes der lichtemittierenden Halbleitermodule gehen, wobei jedes der lichtemittierenden Halbleitermodule die lichtemittierende Halbleitervorrichtung (150, 250) hat, um verschiedene Lichtwellenlängen zu emittieren.

Lichtemittierendes Element, Beleuchtungsvorrichtung und deren Vorrichtungsrahmen

Beleuchtungsvorrichtung, umfassend:- eine Tragbasis (5);- ein lichtemittierendes Element (1), das auf der Tragbasis (5) angeordnet ist, wobei das lichtemittierende Element (1) folgendes aufweist:- ein Substrat (2) mit einer Auflagerfläche (210) und einer Seitenfläche, und- mehrere Licht emittierende Dioden-, LED, Chips (14), die auf der Auflagerfläche (210) angeordnet sind und mehrere Außenoberflächen aufweisen;- eine erste Wellenlängenumwandlungsschicht (4), die die mehreren Außenoberflächen bedeckt, ohne die Seitenfläche zu bedecken,wobei das lichtemittierende Element (1) eine erste Hauptoberfläche (21A) aufweist, die durch die mehreren Außenoberflächen gebildet wird und einen Teil der Auflagerfläche (210), der nicht von den mehreren LED Chips (14) bedeckt ist, und eine zweite Hauptoberfläche (21B) aufweist, die der Auflagerfläche (210) gegenüberliegt,wobei wenigstens einer der mehreren LED Chips (14) betrieben wird, um Licht zu emittieren, welches vorgesehen ist, das Substrat (2) zu ...

Digital controllable matrix element for preparation of light emitting diodes (LED) useful in pixel electronics, and in electronic image representation based on polymers, silicon, or organic LED

Digital controllable matrix element for preparation of light emitting diodes (LED) where: (a) the LED consist of >=4 layers of hole transport-, light emission-, and electron transport materials and have control electrodes, anodes and cathodes; (b) the LED consists of an LED-material, e.g. Si-LED, OLED, and PLED; (c) the LED is selected directly via a signal to the x- and y-transmitters (sic) of a matrix display.

Lamp, has bulb housing provided with tubular hollow bodies, and LEDs arranged in edge area of tubular hollow bodies, where tubular hollow bodies comprise round, oval, rectangular, quadratic or polygonal cross-sections

The lamp has a set of LEDs (6) arranged in a bulb housing, where the bulb housing comprises tubular hollow bodies (4). The LEDs are arranged in an edge area of the tubular hollow bodies, where the tubular hollow bodies comprise round, oval, rectangular, quadratic or polygonal cross-sections. An intermediate spacing is arranged between outer surfaces of the tubular hollow bodies. The tubular hollow bodies are made of heat conducting material i.e. metal. The LEDs are arranged on printed circuit boards (7). A ventilator (8) is arranged relative to the LEDs at an end of the bodies.

Multi-layer substrate for printed circuit board for mounting and connecting electrical and/or electronic components, has guide module arranged on carrier surface side, where light emitted from light source is entered into lighting module

The substrate (1) has a distance frame (11) arranged on a surface side of a carrier and comprising a window, which laterally encloses a luminous body. An outer layer is arranged on the surface side opposite to side of the distance frame and has a transparent region in a region of a light surface. A light source (7) i.e. LED, is arranged on the surface side and emits light into a region lateral to the light source. A light guide module (9) is arranged on the surface side and beside the light source. The light emitted from the source is entered into the module that is made of opaque material.

Beleuchtungsmodul

Es wird ein Beleuchtungsmodul angegeben, das ein erstes Licht emittierendes Halbleiterbauelement (1), das im Betrieb rotes Licht (901) abstrahlt, ein zweites Licht emittierendes Halbleiterbauelement (2), das im Betrieb grünes Licht (902) abstrahlt, und ein drittes Licht emittierendes Halbleiterbauelement (3), das im Betrieb blaues oder kaltweißes Licht (903) abstrahlt, aufweist, wobei das zweite Halbleiterbauelement (2) einen blau emittierenden zweiten Halbleiterchip und ein zweites Wellenlängenkonversionselement aufweist, das einen Anteil von größer oder gleich 90% des vom zweiten Halbleiterchip emittierten blauen Lichts in das grüne Licht (902) umwandelt, und wobei eine Überlagerung des vom ersten, zweiten und dritten Halbleiterbauelement (1, 2, 3) jeweils abgestrahlten Lichts (901, 902, 903) warmweißes Licht (904) ergibt.

Optical device for use as e.g. illumination device and for illuminating e.g. road sign, has lenses arranged in small distance to surface of light sources, where one of lenses focuses light in direction and forms light on defined geometry

The device has multiple LED light sources whose light emitting surface (11) radiates electromagnetic radiation. Multiple lenses e.g. convex lens (13) and/or shaping lens, are arranged in a beam path of emitted light. One of the lenses focuses light in one direction and forms light on a defined geometry. Lenses are arranged at very small distance to the light emitting surface of the LED light sources. The convex lens is designed as a collimating convex lens and rod-or cylinder lens that lies in the beam path of the LED light sources.

LED und LED-Array mit einer jeweiligen Kleberschicht

LED mit einer Kleberschicht (13), mit: einem Substrat (10) mit hoher Wärmeabfuhr; einer auf dem Substrat (10) mit hoher Wärmeabfuhr gebildeten elektrisch isolierenden Schicht (111); einer auf der elektrisch isolierenden Schicht (111) ausgebildeten Kleberschicht (13); einem auf der elektrisch isolierenden Schicht (111) hergestellten LED-Stapel (17 bis 21); und einer Vielzahl von Wärmepfad-Erhebungen, die zwischen dem Substrat (10) mit hoher Wärmeabfuhr und der elektrisch isolierenden Schicht (111) ausgebildet sind, wobei ein Teil der Wärmepfad-Erhebungen die Kleberschicht (13) vollständig durchdringen, und wobei das Substrat (10) mit hoher Wärmeabfuhr aus Metall besteht.

Halbleiter-Strahlungsquelle, Lichthärtgerät mit Halbleiter-Strahlungsquelle, Beleuchtungsgerät mit Halbleiter-Strahlungsquelle und Verwendung eines Beleuchtungsgeräts mit Halbleiter-Strahlungsquelle

Halbleiter-Strahlungsquelle, mit einer optischen Achse (22) und mindestens zwei Lichtquellen, die auf einem gemeinsamen Basiskörper (12) befestigt sind und mit welchen gemeinsam Licht über ein Gesamt-Emissionsspektrum abgebbar ist, wobei eine erste Lichtquelle ein kurzwelliges und eine zweite Lichtquelle ein langwelligeres Emissionsspektrum hat, wobei eine der Lichtquellen (16) in der optischen Achse (22) angeordnet ist und die andere Lichtquelle (18) mindestens zwei LED-Chips (24, 26, 28, 30) aufweist, die die optische Achse (22) umgebend angeordnet sind, dadurch gekennzeichnet, dass die LED-Chips (16, 24, 26, 28, 30) von einem Abstandshalter (50) umgeben sind, der eine Abdecklinse (52) abstützt, und dass sich zwischen den LED-Chips (16, 24, 26, 28, 30), dem Abstandshalter (50) und der Abdecklinse (52) ein geschlossener Raum erstreckt, der eine durchsichtige oder durchscheinende, flüssige oder gelförmige Substanz aufweist.

Multichip LED Leuchten

Eine Mehrchip-Leuchtvorrichtungs-(LED-)Lampe zur Bereitstellung von Weißlicht umfasst eine Montagebasis, die erste und zweite Chipbefestigungsregionen umfasst. Ein erster LED-Chip wird auf die erste Chipbefestigungsregion montiert und ein zweiter LED-Chip wird auf die zweite Chipbefestigungsregion montiert. Die LED-Lampe ist konfiguriert, um Licht mit einer spektralen Verteilung zu emittieren, das mindestens vier unterschiedliche Farbmaxima umfasst, um das Weißlicht zu ergeben. Zum Beispiel kann ein erstes Umwandlungsmaterial zumindest teilweise den ersten LED-Chip bedecken und kann konfiguriert sein, um zumindest einen Teil des Lichts der ersten Farbe zu absorbieren und Licht einer dritten Farbe zu emittieren. Zusätzlich kann ein zweites Umwandlungsmaterial zumindest teilweise den ersten und/oder zweiten LED-Chip bedecken und kann konfiguriert sein, um zumindest einen Teil des Lichts der ersten und/oder zweiten Farbe zu absorbieren und Licht einer vierten Farbe zu emittieren. Es werden ...

Anzeigevorrichtung, Betriebsverfahren und Beleuchtungsvorrichtung

Es wird eine Anzeigevorrichtung angegeben, mit - einer Pulsweitenmodulationsschaltung (1), - einem Demultiplexer (2), der zumindest einen Signaleingang (21) und zumindest zwei Signalausgänge (22) aufweist, wobei der Signaleingang (21) mit der Pulsweitenmodulationsschaltung (1) verbunden ist, und - zumindest zwei Leuchtdioden (3), die jeweils mit einem Signalausgang (22) des Demultiplexers verbunden sind.

Multichip-LED

Multichip-LED, aufweisend: eine Reflektorwanne (10); eine Mehrzahl von Leuchtchips (20a, 20b, 20c), die in der Reflekorwanne (10) angeordnet sind und leuchten, wenn sie angetrieben werden; und eine Ummantelung, die in der Reflektorwanne (10) angeordnet ist und die Leuchtchips (20a, 20b, 20c) überdeckt, und die eine Mehrzahl von Linsen aufweist, wobei die Linsen (34a, 34b, 34c) den Leuchtchips (20a, 20b, 20c) zugeordnet sind, und das Licht von den zugeordneten Leuchtchips (20a, 20b, 20c) brechen, wobei die Reflektorwanne (10) eine Trägerfläche (12) und eine reflektierende Fläche (14) aufweist, die Leuchtchips (20a, 20b, 20c) auf der Trägerfläche (12) angeordnet sind, und die reflektierende Fläche (14) das eingefallene Licht reflektiert, wobei die Ummantelung ferner eine lichtleitende Schicht (32) aufweist, die lichtleitende Schicht (32) in der Reflektorwanne (10) zwischen den Linsen (34a, 34b, 34c) und den Chips (20a, 20b, 20c) angeordnet ist, die lichtleitende Schicht (32) die Leuchtchips ...

LED-Bauelement

Bei einem LED-Bauelement mit mindestens einer LED (3) und mindestens einem Treiber (2) für die LED (3) sind der mindestens eine Treiber (2) und die mindestens eine LED (3) derart voneinander beabstandet, dass beim Betrieb der LED (3) ein Wärmeaustausch zwischen dem Treiber (2) und der LED (3) stattfindet.

Anordnung mit mindestens einem optoelektronischen Halbleiterbauelement

Eine Anordnung mit mindestens einem optoelektronischen Halbleiterbauelement weist eine zum Tragen des mindestens einen optoelektronischen Halbleiterbauelements geeignete Trägerelementanordnung auf. Die Anordnung weist einen aus einem Licht absorbierenden Kunststoff gebildeten Gehäusekörper auf, der an der Trägerelementanordnung angeordnet ist. Der Gehäusekörper umfasst einen erhöhten Bereich und einen zurückgesetzten Bereich. Zwischen dem erhöhten und dem zurückgesetzten Bereich ist eine schräge Flanke gebildet. Der zurückgesetzte Bereich reicht bis an das optoelektronische Halbleiterbauelement, um Reflexionen zu verringern.

Leuchtmittel

In mindestens einer Ausführungsform des Leuchtmittels (10) weist dieses eine erste Gruppe (11) von Halbleiterchips (1) und eine zweite Gruppe (22) von Halbleiterchips (2) auf, wobei die Gruppen (11, 22) jeweils mindestens einen Halbleiterchip (1, 2) umfassen und die erste und die zweite Gruppe (11, 22) von Halbleiterchips (1, 2) wenigstens zum Teil bezüglich einer Hauptabstrahlrichtung (H) des Leuchtmittels (10) lateral nebeneinander angeordnet sind. Weiterhin umfasst das Leuchtmittel (10) eine dritte Gruppe (33) von Halbleiterchips (3), die mindestens einen Halbleiterchip (3) beinhaltet, und wobei die dritte Gruppe (33) bezüglich der Hauptabstrahlrichtung (H) der ersten und der zweiten Gruppe (11, 22) nachgeordnet ist. Jede Gruppe (11, 22, 33) von Halbleiterchips (1, 2, 3) ist dazu ausgestaltet, in paarweise voneinander verschiedenen Wellenlängenbereichen elektromagnetische Strahlung (L1, L2, L3), insbesondere im sichtbaren Spektralbereich, zu emittieren. Die von der dritten Gruppe (33 ...

LED-Lampe

Bei der erfindungsgemäßen LED-Lampe ist eine Zener-Diode auf einer Kupferplatte montiert und ein lichtemittierendes Element auf GaN-Basis ist auf der Zener-Diode montiert, wobei eine Elektrode des Elements nach unten orientiert ist. Zwei Zener-Dioden nahe am Zentrum der LED-Lampe sind auf einer gemeinsamen Kupferplatte montiert, wodurch die beiden lichtemittierenden Elemente in Reihe verbunden werden. Demgemäß ist eine Zener-Diode mit jeweils einer der beiden Zener-Dioden durch einen Draht verbunden, der als leitfähiges Element dient. Vier lichtemittierende Elemente sind in Reihe miteinander verbunden, wodurch eine Schaltungskonfiguration vervollständigt wird. Auf diese Weise ermöglicht die Verwendung der Zener-Diode für Verbindungszwecke eine Verringerung der minimalen Anzahl an erforderlichen Drähten. Es ist besser, den Draht mit den oberen Flächen der Zener-Dioden zu verbinden, wodurch das Erfordernis eines redundanten Verdrahtungsraums vermieden wird und eine Miniaturisierung der LED-Lampe ...

Method for manufacturing light-emitting device

A method for manufacturing a light-emitting device includes firstly, flip-chip mounting separate first and second light emitting elements 31,32 (such as LED chips) on a substrate 10. Secondly, bonding a light transmissive member 51,52 (for example, a silicon resin maxtrix with a wavelength conversion fluorescent material such as SiAlON or manganese-activated fluoride) to each light emitting element 31,32, so that a surface 51L,52L of one light transmissive member faces a surface of the other light transmissive member, separated by a gap. Thirdly, scraping at least one of the surfaces 51L,52L (for example, using a dry cutting blade 90, to remove projections from the surface). Fourthly, providing a light reflective covering (70, figure 3E) on the substrate 10, and the surfaces 51L,52L, before cutting the substrate and the covering at a location between the surfaces.

SOLID-STATE DISPLAY APPARATUS AND WAFER FOR USE THEREIN

... 1428730 Electroluminescence MATSUSHITA ELECTRONICS CORP 30 Aug 1973 [5 Sept 1972] 40892/73 Heading C4S [Also in Divisions G4-G6] A display device comprises an array of infrared emitting diodes 4 and corresponding blocks of phosphor 5 which convert the infra-red radiation to visible light. The device comprises an insulating layer 1 supporting an Al substrate 2 with recesses 3 arranged in a figure-ofeight or to form letters or symbols. Each recess contains a GaAs diode and a block of luminescent material 5 embedded in resin 6 which acts as a light guide for the infra-red radiation; the back wall of the recesses are reflective. The blocks are of resin and a phosphor comprising one or a mixture of LaF 3 ; Yb, Er : YF 3 ; Yb, Er : YF 3 ; Yb, Tm : YOCl; Yb, Er : Y 3 OCl 7 ; Yb, Er. The cross-section of the blocks may be a circle, ellipse, square or polygon. The resins are epoxy, polyurethane or silicone. The wires 9 are of Al or Au. The Al substrate may be replaced by an Al coating on a recessed ...

ELECTROLUMINESCENT DEVICES

... 1459455 Semiconductor devices PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES Ltd 11 Dec 1973 57357/73 Heading H1K [Also in Divisions C4 and G5] An electroluminescent device comprises at least two simultaneously energizable electroluminescent light sources connected in series so that current of the same intensity can be simultaneously injected in each, the light flux emitted by a first source emitting light of a first wavelength being dominant when a current of intensity I 1 is injected into each source, and the flux emitted by a second source emitting light of a second wavelength being dominant when a current of intensity I 2 is injected into each source. The device allows supply to the sources by a common conductor rather than by a plurality of conductors and supplies &c. One or more of the sources may be made up of identical series connected sources. Preferably a single source is included for each desired (primary) colours enabling other colours to be obtained by mixing. The duration of ...

ELECTRIC LIGHT-EMITTING APPARATUS

... 1428740 Alpha-numeric displays MATSUSHITA ELECTRONICS CORP 11 May 1973 [15 May 1972] 22686/73 Addition to 1409330 Heading G5C [Also in Division F4] A light-emitting apparatus, e.g. a sevenelement numeral indicator, comprises an electrically conductive substrate 2 having a number of recesses 3 therein each having a flat reflecting floor 31, smooth reflecting sidewalls 32 perpendicular to the floor and an oblique, smooth reflecting surface 6 disposed at an obtuse angle a to the floor 31, a light-emitting diode 4 being secured and electrically connected to the floor of each recess with a wire 10 connecting the second electrode of each diode to a connecting tab 9 on an insulating substrate 1, a transparent resin 5 surrounding each diode and filling the recesses, and wherein there is provided a covering 12 which is transparent at least in lightdirnising regions 16 which have roughened or irregular surfaces 14 so located as to transmit light reflected from the oblique surfaces 6. The covering ...

High intensity light source

DIODE DISPLAY

L.E.D. indicator device

The device comprises a plurality of light emitting diodes (10A, 10B) electrically connected for simultaneous energisation and disposed on a small printed circuit board (20) in a particular spatial arrangement relative to a common diffusing cover (38) to give a desired even light effect. The device has pins (14A, 14B) by which it can be mounted onto another printed circuit board etc. There may be two interspersed sets of light emitting diodes of different colours also allowing a third colour at part energisation. ...

LED light source

An LED light source comprising an plurality of LED dies 1, a corresponding number of heat sinks 2 each having an integral light reflector 5 on which a die is mounted, and a dielectric substrate 4 on one side of which the heat sinks are contiguously mounted in spaced apart relationship with the light reflector remote the dielectric substrate, wherein the heat sinks each comprise an island of material having high thermal conductivity and of sufficient thickness to ensure that heat generated in the die is distributed substantially uniformly over a contact region between the said substrate and the heat sink.

Optoelectronic device packaging assemblies

Diffuser tube for linear LED array with mounting slots for PCB and mounting frame

Light diffuser tube 10 comprises a top cylindrical diffuser potion 12 with lenticular elements 25 within which LED are positioned. The LEDs are held in an array on a PCB which is held in slots 23, 24 so that wiring and circuitry for the LEDs is contained within body portion 13 fromed by side walls 14, 15 and base 16. A mounting portion 11 provides slots 32, 33 that receive a mounting rail 36 (see fig 3). The diffuser, body and mounting portions may be formed as single tubular element seen in cross-section in figure 1.

Electrically isolated vertical light emitting diode

The vertical LED includes an electrical conducting mirror layer 416, which reflects at least 60% of generated light incident on it, and a thermally conductive electrically isolating layer 405. A first LED electrode, which is not in direct contact with the main semiconductor layers 409 of the device, is located on the mirror layer 416. A light emitting module, system and projection system incorporating the light emitting device are also described, as is a method of manufacture of the device. A light emitting device is provided having high luminous output while maintaining high wall plug efficiency, wherein the high thermal and electrical conductivity paths of the device are separated during the semiconductor wafer and die level manufacturing step.

Tri-colour LED module structure

A tri-colour LED module comprises an insulating base 2 with a receiving chamber 22 having receiving recess 221, four contact terminals 31, 33, 35, 37, a tri-colour LED chip 4 and a cover 5. The four terminals are not in contact with one another and each includes an inserting portion 311, 331, 351, 371 extending out of the insulting base and a touching portion 312, 332, 352, 372 in the receiving recess. The four terminals and the insulating base are an integrally formed structure. The tri-colour LED chip 4 is disposed in the receiving recess 221 of the insulating base 2 with four pins 41, 43, 45, 47 of the chip in touch with the touching portions of the four terminals. The cover 5 covers the receiving chamber 22 of the insulating base 2 and includes through hole 51 which accommodates shoulders 49 of the LED chip 4 so the chip can be mounted through the through hole and soldering is not required. Colour mixing is possible by controlling voltage combinations.

Light sources for improving visual preception under mesopic lighting conditions

A method and apparatus for use in the manufacture of a display element

In a micro-assembly method of manufacture of a display element, a pickup tool (PUT) is used for selective picking of a subset of LED dies from a handle layer. The strength of adhesion of the subset of devices to be picked from the handle layer has been modified, so that the strength of adhesion of the dies to the handle layer is less than the force applied by the pickup tool. The handle layer may be UV tape which is selectively irradiated with a UV light only below the subset of devices to be picked; a thermal release tape; or a multiple layer tape. The devices may be micron scale directional parabolic inorganic LED devices. The subset of devices may be transferred to a substrate of a display element. A computer program may comprise instructions for executing the method.

Superluminescent diode module

A module 5 accommodates multiple superluminescent light emitting diodes (SLEDs) 12. The SLEDs 12 are arranged in an enclosure 10 and output respective light beams to propagate into free space within the enclosure. The individual light beams from the SLED sources are combined into a single beam path within the enclosure using beam combiners 40. Each beam combiner 40 is realised as a planar optical element, the back side of which is arranged to receive an SLED beam and route it through the optical element to the front side where it is combined with another SLED beam that is incident on and reflected by the front side. The free-space propagating combined beam is output from the module via a port, the port may connect to an optical fibre 42 or may be a window in the enclosure. The module can be used as part of an optical coherence tomography (OCT) system, a fundus imaging system or endoscopic imaging system.

MANUFACTURE OF ELECTRO-LUMINESCENT DISPLAY DEVICES

... 1532286 Matrix displays ELLIOTT BROS (LONDON) Ltd 23 Sept 1977 [7 Oct 1976] 41744/76 Heading G5C [Also in Division H1] In the manufacture of an array of LEDs each of which comprises a separate p type diffusion 3 into an n type substrate 1 and in which individual diodes are contacted, and preferably interconnected in rows, on their top surfaces and a common electrode 2 is applied over the entire lower surface, lateral isolation grooves 6 are formed, e.g. between adjacent columns wholly or mainly by mechanical cutting, this giving a narrower groove and hence higher resolution than an etched groove. Chemical or electrolytic etching may be used for the final portion of grooves otherwise mechanically cut.

LIGHT EMITTING DIODE DISPLAY DEVICES

... 1499509 Matrix displays SONY CORP 24 Dec 1974 [28 Dec 1973 21 Nov 1974] 55675/74 Heading G5C [Also in Division H1] In a display device, LED's 12 are retained in recesses in a layer 2 on a substrate 1 and are electrically connected by portions of aconductive layer 4 which extend over the recesses. The device comprises an insulating substrate 1, a plurality of LEDs with their junctions perpendicular to the substrate, Cu layers 2, 3, Ni and Zn-S-Ni layers 4, 5 and Sn layer (23) Fig. IF (not shown) on layer 4. The recesses are formed by etching layers 2, 4 leaving the edges of the Ni layers projecting. The Sn layer is then added. Apertures are also etched in the layers 3, 5 through which the LEDs are secured. After the LEDs are inserted, flux is applied to the tin layer which is then alloyed with the LED electrodes. The tin layer may be added after the LEDs are inserted. The LEDs are arranged in a figure of eight with two diodes in each arm of the array. The device is finally embedded in resin ...

Stretchable display panel and stretchable display device including the same

LIGHT-EMITTING DEVICE

Head-up display

Head-up display 2 comprising: an image generator 23 with a light source (231, fig 5), a display (3, fig 4), a heat sink (238, fig 5), an optical system 25 and a transmissive screen 21 wherein the light source is arranged on a metal-ceramic substrate (4, fig 5) and having thermal contact with the heat sink. The metal-ceramic substrate and heatsink may be detachably connected to each other. The metal-ceramic substrate may have a thickness of less than 1mm.

Method of fabricating an integrated structure for an optoelectronic device and integrated structure for an optoelectronic device

LED MODULE FOR THE CONVERSION OF SUNLIGHT OR ARTIFICIAL LIGHT INTO ELECTRICAL ENERGY AND METHOD FOR MANUFACTURING THE SAME

LED MODULE FOR THE CONVERSION OF SUNLIGHT OR ARTIFICIAL LIGHT INTO ELECTRICAL ENERGY AND METHOD FOR MANUFACTURING THE SAME

LED MODULE FOR THE CONVERSION OF SUNLIGHT OR ARTIFICIAL LIGHT INTO ELECTRICAL ENERGY AND METHOD FOR MANUFACTURING THE SAME

VERFAHREN ZUR BESTIMMUNG DER GÜTE BZW. FUNKTIONSFÄHIGKEIT VON SURFAKTANT

HIGH SPEED LED LAMP SYSTEM

LICHTEMITTIERENDES ELEMENT WITH LIGHT WITH ANIMAL ENDS OF DIODES

MODULE OF POINT OF CHANGE OPTICS

LED LAMP

Led chip package structure

A LED chip package structure includes a substrate unit, a light-emitting unit, and a package unit. The substrate unit includes a strip substrate body. The light-emitting unit includes a plurality of LED chips disposed on the strip substrate body and electrically connected to the strip substrate body. The package unit includes a strip package colloid body disposed on the strip substrate body to cover the LED chips, wherein the strip package colloid body has an exposed top surface and an exposed surrounding peripheral surface connected between the exposed top surface and the strip substrate body, and the strip package colloid body has at least one exposed lens portion projected upwardly from the exposed top surface thereof and corresponding to the LED chips. Hence, light beams generated by the LED chips pass through the strip package colloid body to form a strip light-emitting area on the strip package colloid body.

Optoelectronic Semiconductor Component and Display Means

In at least one embodiment, an optoelectronic semiconductor component includes at least two optoelectronic semiconductor chips, which are designed to emit electromagnetic radiation in mutually different wavelength ranges when in operation. The semiconductor chips are mounted on a mounting surface of a common carrier. Furthermore, the optoelectronic semiconductor component contains at least two non-rotationally symmetrical lens bodies, which are designed to shape the radiation into mutually different emission angles in two mutually orthogonal directions parallel to the mounting surface. One of the lens bodies is here associated with or arranged downstream of each of the semiconductor chips in an emission direction.

Method of fabricating light emitting device

A method of fabricating a light emitting device includes forming a plurality of light emitting elements on light emitting element mounting regions, respectively, of a substrate, forming lens supports on the light emitting element mounting regions, respectively, are raised relative to isolation regions of the substrate located between neighboring ones of the light emitting element mounting regions, and forming lenses covering the light emitting elements on the lens support patterns, respectively.

Non-radiatively pumped wavelength converter

A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements.

Integrated Heat Conductive Light Emitting Diode (LED) White Light Source Module

This invention discloses a new and advanced light emitting diodes (LEDs) light source module, and more specifically surface mounting LED dice and/or driver circuits on a slim linear Silicon wafer to provide superior heat dissipation capability through eutectic bonding onto a small Silicon base and the overall performance/cost ratio of the LED white light source module by an advanced integrated.

Light emitting device

The present disclosure provides a light emitting device, including a serially-connected LED array including a plurality of LED cells on a single substrate, including a first LED cell, a second LED cell, and a serially-connected LED sub-array including at least three LED cells intervening the first and second LED cell, wherein each of the first and second LED cell including a first side and a second side that the first side of the first LED cell and/or the second LED cell neighboring to the LED sub-array, and the second side of the first LED cell neighboring to the second side of the second LED cell; a trench between the second sides of the first and second LED cells; and a protecting structure formed near the trench to prevent the light-emitting device from being damaged near the trench by a surge voltage higher than a normal operating voltage of the light emitting device.

Method for Producing Lamps

A method for producing luminous means proposes providing a carrier serving as a heat sink, said carrier comprising a planar chip mounting region. The planar chip mounting region is structured for the purpose of producing a first partial region and at least one second partial region. In this case, the first partial region has a solder-repellent property after structuring. Afterward, a solder is applied to the planar chip mounting region, such that said solder wets the at least one second partial region. At least one optoelectronic body is fixed into the at least one second partial region with the solder at the carrier. Finally, contact-connections are formed for the purpose of feeding electrical energy to the optoelectronic luminous body.

Arrangement for emitting mixed light

An arrangement for emitting mixed light including a primary and secondary radiation with at least one first electroluminescent light-source for emitting first primary radiation, at least one second electroluminescent light-source for emitting second primary radiation, and a light-converting element for absorbing at least one of the primary radiations and re-emitting the secondary radiation. The light-converting element is arranged so that the entire proportion of primary radiation in the mixed light passes through the light-converting element. The light-converting element is a ceramic light-converting material whose microstructure is selected to be such that the color point of the mixed light of primary and second radiation is substantially independent of the angle of viewing.

Light source with tunable cri

A light-emitting device with at least two light-emitting dies encapsulated with two different types of the wavelength-converting materials is disclosed. Each of the wavelength-converting materials is configured to produce a visible light from a narrow band light near UV region produced by the light-emitting dies, but with different correlated color temperatures (CCT) and different spectral contents. The combination of the two visible light forms the desired visible white light. The Color rendering index of the light-emitting device is tunable by adjusting the supply current to the light-emitting dies. In another embodiment, a light module with tunable CRI for an illumination system is disclosed.

Optical touch panel and light guide module thereof

An optical touch panel includes a panel and a light guide module. The light guide module is disposed on the panel, and the light guide module includes a printed circuit board, at least one light emitting element, and a light guide strip. The light emitting element is electrically disposed on the printed circuit board. The light guide strip is disposed on the printed circuit board, and wraps the light emitting element. Additionally, the light emitting element emits light rays, and the light rays penetrate the light guide strip and are emitted to the panel.

Monolithic full-color led micro-display on an active matrix panel manufactured using flip-chip technology

A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using PMOS process, NMOS process, or CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the PMOS/NMOS/CMOS process can be eliminated.

Three dimensional light emitting diode systems, and compositions and methods relating thereto

A flexible layered structure is disclosed having a flexible top conductive layer, a flexible bottom heat sink layer and a flexible dielectric middle layer. The combination has a longitudinal axis and a plurality of defined positions spaced along the longitudinal axis. The defined positions can be used for aligning a circuit and/or for the placement of LED lights. The flexible layered structure can be easily bent to form a LED substrate for shining light in more than one direction while efficiently removing heat arising from the LEDs.

Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same

The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same. In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane.

Modular High Density LED Array Light Sources

A modular LED array light source comprises an assembly of a plurality of solid-state LED array modules. Modules are abutted to provide a large area, high intensity, and high-density array that provides substantially uniform irradiance. Preferably, in each module, a linear or rectangular array of groups of LED is provided in which the density of LED die in the array is higher at ends or edges of the modules abutting other modules, to provide improved uniformity of irradiance over the illuminated area between modules. Particular arrangements of clusters of LEDs are provided that reduce or overcome the discontinuity or dip in irradiance due to edge or wall effects caused by the spacing of LED die from edges of the substrate/packaging of each module. These arrangements are advantageous for hermetically sealed LED array modules, for example, which require a minimum wall thickness for an effective seal.

Substrate for mounting optical semiconductor element and manufacturing method thereof, optical semiconductor device and manufacturing method for thereof

A substrate for mounting optical semiconductor elements is provided, including a base substrate having an insulating layer and a plurality of wiring circuits formed on the upper face of the insulating layer, and having at least one external connection terminal formation opening portion which penetrates the insulating layer and reaches the wiring circuits; and an optical reflection member, which is provided on the upper face of the base substrate, and which forms at least one depressed portion serving as an area for mounting an optical semiconductor element.

Light-emitting device and manufacturing method for light-emitting device

A light-emitting device includes: a substrate; the metal film at the mounting region on the substrate; a light-emitting part including a plurality of light-emitting elements disposed on the metal film; metal members formed on the substrate, respectively including pad parts and wiring parts, forming a positive electrode and a negative electrode configured to apply a voltage to the light-emitting element through the wiring parts, respectively; and a plating wire connected to the metal film, extended to a side face of the substrate. The metal film and the metal members are independently disposed. The wiring part of the positive electrode and the wiring part of the negative electrode are formed at a circumference of the mounting region. The metal members are formed apart from the circumferential edge of the substrate on the side of the mounting region of the substrate.

Method for sealing light engine module with flip-chip light emitting diode

The sealing method is to firstly form a circuit layout with electrode contacts on a circuit board and flip-chip light emitting diodes (FCLEDs) are electrically connected to the electrode contacts by adhesive material. After the adhesive material is solidified, a plastic ring is attached to the circuit board to surround the LEDs and cycle dispensing is used to coat fluorescent-powder gel within plastic ring on the exposed sides of the LEDs and on the surface of the circuit board between neighboring LEDs. Then, vacuum de-aerating and baking is conducted and a light engine module is formed. In the present invention, the lateral light from the LEDs forms a light extension area where the coated fluorescent-powder gel there is activated and extended planar light is as such produced. The present invention is therefore able to increase lighting efficiency, light projection angle, light brightness, and uniformity.

Lighting device, display device and television device

A technology to suppress or prevent an uplift of a reflection sheet included in a direct type lighting unit is provided. A direct type backlight unit according to the present invention includes an LED board 30 , an LED 28 arranged on a surface of the LED board 30 , a reflection sheet 26 arranged on the surface of the LED board 30 . The reflection sheet 26 has a through hole 27 through which the LED 28 is passed. The reflection sheet 26 is arranged such that a part 26 a of a periphery 27 a of the through hole 27 is located between a light emitting surface 28 a of the LED 28 and the LED board 30.

DISPLAY DEVICE EQUIPPED WITH TOUCH SENSOR

Disclosed is a display device that has a light detecting element (D) disposed in a pixel region (), an opening (a through hole) () formed in an insulating film () that is disposed above the light detecting element (D), and a transparent electrode () formed in the opening (), and that can reduce occurrence of leakage between the transparent electrode () and other wiring line (SL). Specifically disclosed is a display device that has an active matrix substrate () in which a first wiring line (SL) and a second wiring line (GL) are formed so as to cross each other, and a light detecting element (D) disposed on a pixel region () in the active matrix substrate (). The display device has a first insulating film () formed between the first wiring line (SL) and the second wiring line (GL), a second insulating film () disposed on the first insulating film (), and a transparent electrode () formed above the light detecting element (D) so as to enter a through hole () formed in the second insulating film (). The first wiring line (SL) has a discontinuous section at a part adjacent to the light detecting element, and both ends of the discontinuous section are electrically connected to each other through an auxiliary wiring line () disposed in the same layer as that of the second wiring line (GL). 1. A display device , comprising:an active matrix substrate having a first wiring line and a second wiring line formed so as to cross each other;a light detecting element disposed in a pixel region in the active matrix substrate;a first insulating film interposed between the first wiring line and the second wiring line;a second insulating film disposed on the first insulating film; anda transparent electrode formed above the light detecting element so as to reach inside of a through hole formed in the second insulating film,wherein the first wiring line has a discontinuous section at a part adjacent to the light detecting element, and both ends of the first wiring line at the ...

Light-Emitting Device and Electric Appliance

An inexpensive light emitting device capable of displaying a bright image and an electric appliance using the light emitting device. In the light emitting device having a pixel portion and a driver circuit formed on one insulating member, all of semiconductor elements for the pixel portion and the driver circuit are formed by n-channel semiconductor elements, thereby enabling the manufacturing process to be simplified. Each of light-emitting elements provided in the pixel portion emits light in such a direction that most of the light travels away from the insulating member, so that substantially the whole of the pixel-forming segment electrode (corresponding to a cathode of an EL element) is formed as an effective light-emitting area. Therefore, a low-priced light-emitting device capable of displaying a bright image can be obtained. 145-. (canceled)46. A display device comprising:a first substrate;a pixel portion comprising a plurality of pixels over the first substrate, wherein each of the plurality of pixels comprises a first transistor, a second transistor and a light-emitting element;a second substrate over the first substrate with the pixel portion interposed therebetween;a first seal member between the first substrate and the second substrate, wherein the first seal member is disposed along peripheries of the first and second substrates; anda second seal member disposed outside of and along the first seal member, wherein the second seal member comprises a region in contact with side surfaces of the first and second substrates,wherein each of the first transistor and the second transistor is an enhancement-type n-channel thin film transistor.47. The display device according to claim 46 , wherein each of the first transistor and the second transistor includes a semiconductor layer comprises silicon.48. The display device according to claim 46 , wherein each of the plurality of pixels further comprises a third transistor claim 46 ,wherein the third transistor is ...

ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND METHOD FOR TESTING THE ACTIVE MATRIX SUBSTRATE OR THE DISPLAY DEVICE

An active matrix substrate includes a plurality of bus lines () provided in a pixel region, a plurality of signal terminals () provided in a connection terminal region (K), connection lines (), additional signal terminals (), test lines (), and switching elements (). The switching elements () are divided into a plurality of groups, and can control connections between the bus lines and the test lines () on a group basis, and connection elements () that each include a diode or a switching element and connect the signal terminals () to each other are provided in the connection terminal region (K). 1. An active matrix substrate comprising:a plurality of bus lines provided in a pixel region;a plurality of signal terminals for inputting a driving signal to each of the bus lines, the signal terminals being provided in a connection terminal region situated outside the pixel region;connection lines for connecting the signal terminals to the bus lines;additional signal terminals for inputting a signal to the bus lines through different paths from those used in inputting the driving signal from the signal terminals, the additional signal terminals being provided outside the pixel region;additional connection lines for connecting the bus lines to the additional signal terminals; anda plurality of switching elements for controlling connections between the bus lines and the additional connection lines,wherein the switching elements are divided into a plurality of groups, and can control connections between the bus lines and the additional connection lines on a group basis, andconnection elements that each comprise a diode or a switching element and connect the signal terminals to each other are provided in the connection terminal region.2. The active matrix substrate according to claim 1 , wherein the connection elements are each provided between the signal terminals connected to the bus lines belonging to different groups.3. The active matrix substrate according to claim 1 , ...

LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE

To provide a circuit used for a shift register or the like. The basic configuration includes first to fourth transistors and four wirings. The power supply potential VDD is supplied to the first wiring and the power supply potential VSS is supplied to the second wiring. A binary digital signal is supplied to each of the third wiring and the fourth wiring. An H level of the digital signal is equal to the power supply potential VDD, and an L level of the digital signal is equal to the power supply potential VSS. There are four combinations of the potentials of the third wiring and the fourth wiring. Each of the first transistor to the fourth transistor can be turned off by any combination of the potentials. That is, since there is no transistor that is constantly on, deterioration of the characteristics of the transistors can be suppressed. 1. A semiconductor device comprising:a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor,wherein a gate of the first transistor is electrically connected to a first wiring,wherein a first terminal of the first transistor is electrically connected to the first wiring,wherein a second terminal of the first transistor is electrically connected to a gate of the third transistor,wherein a first terminal of the second transistor is electrically connected to a second wiring,wherein a second terminal of the second transistor is electrically connected to the gate of the third transistor,wherein a first terminal of the third transistor is electrically connected to the first wiring,wherein a second terminal of the third transistor is electrically connected to a gate of the sixth transistor,wherein a gate of the fourth transistor is electrically connected to a third wiring,wherein a first terminal of the fourth transistor is electrically connected to the second wiring,wherein a second terminal of the fourth transistor is electrically connected to the gate of the sixth ...

Luminescent light source and display panel having the same

A luminescent light source including a blue light emitting diode (LED) chip, a red LED chip, and a wavelength converting material is provided. The blue LED chip and the red LED chip respectively emit a first light and a second light. A ratio of peak intensity of the second light to peak intensity of the first light ranges from 0.36 to 0.56. The wavelength converting material is disposed around the blue LED chip or the red LED chip and emits a third light. A wavelength of the third light ranges from a wavelength of the first light to a wavelength of the second light.

ARRAY SUBSTRATE, METHOD FOR CONTROLLING THE SAME AND DISPLAY PANEL INCLUDING THE ARRAY SUBSTRATE

According to an embodiment of the invention, there is disclosed an array substrate, comprising: data lines; first and second gate lines, the first and second gate lines and the data lines crossing with each other so as to define sub-pixel structures; each of the sub-pixel structures comprising first and second sub-pixels; a first control line, insulated from the first and second gate lines; and first switch devices, each for making the first gate line and the second gate line corresponding to the first sub-pixel and the second sub-pixel in the same sub-pixel structure connected or disconnected under the control of the first control line, wherein in each of the sub-pixel structures, the first gate line is connected to the first sub-pixel, the second gate line is connected to the second sub-pixel, and the first sub-pixel and the second sub-pixel are connected to the same data line. 1. An array substrate , comprising:data lines;first gate lines and second gate lines, the first and second gate lines and the data lines crossing with each other so as to define a plurality of sub-pixel structures arranged in a matrix form; each of the plurality of sub-pixel structures comprising a first sub-pixel and a second sub-pixel, and each of the first sub-pixel and the second sub-pixel including a pixel electrode and a thin film transistor, the thin film transistor for each of them comprising a gate, a source, a drain and an active layer;a first control line, insulated from the first gate lines and the second gate lines; andfirst switch devices, each for making the first gate line and the second gate line corresponding to the first sub-pixel and the second sub-pixel in the same sub-pixel structure connected or disconnected under the control of the first control line,wherein in each of the sub-pixel structures, the first gate line is connected to the first sub-pixel, the second gate line is connected to the second sub-pixel, and the first sub-pixel and the second sub-pixel are ...

METHODS FOR FABRICATING A SEMICONDUCTOR DEVICE

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed. 1. A flexible display panel comprising:a first film,an adhesive on the first film,an oxide layer on the adhesive, anda second film opposed to the first film,wherein the flexible display panel is configured to be attached to a part of a vehicle,andwherein a curvature of the flexible display panel is matched with a curved surface of the part of the vehicle.2. The flexible display panel according to the claim 1 ,wherein the first film and the second film have elasticity.3. The flexible display panel according to the claim 1 ,wherein the vehicle is selected from the group consisting of an automobile, an aircraft, a ship, a train, and an electric railcar.4. The flexible display panel according to the claim 1 ,wherein the part of the vehicle is selected from the group consisting of a dashboard, a window, a pillar, a wall, a ceiling, a door, and a seat.5. The flexible display panel according to the claim 1 ,wherein at least one of the first film and the second film is transparent.6. The flexible display panel according to the claim 1 ,wherein the flexible display panel is an active matrix type.7. The flexible display panel according to the claim 1 ,wherein the flexible ...

DISPLAY PANEL AND DISPLAY DEVICE

Embodiments of the disclosed technology provide a display panel and a display device. The display panel comprises a plurality of pixels arranged in a matrix, wherein each of the pixels comprises a first sub-pixel region and a second sub-pixel region, the first sub-pixel region comprises one or more color sub-pixels, and the second sub-pixel region comprises one or more white sub-pixels. The display device according to the disclosed technology comprises the above display panel. 1. A display panel , comprising a plurality of pixels arranged in a matrix , wherein each of the pixels comprises a first sub-pixel region and a second sub-pixel region , the first sub-pixel region comprises one or more color sub-pixels , and the second sub-pixel region comprises one or more white sub-pixels.2. The display panel of claim 1 , wherein the first sub-pixel region and the second sub-pixel region are arranged in a vertical direction in a plane of the display panel claim 1 , and the first sub-pixel regions and the second sub-pixel regions in each row of pixels constitute a color sub-pixel row and a white sub-pixel row claim 1 , and the color sub-pixel rows and the white sub-pixel rows on the display panel are alternatively disposed in the vertical direction.3. The display panel of claim 1 , wherein the first sub-pixel region comprises a first color sub-pixel claim 1 , a second color sub-pixel and a third color sub-pixel; and the second sub-pixel region comprises a first white sub-pixel claim 1 , a second white sub-pixel claim 1 , and a third white sub-pixel.4. The display panel of claim 3 , wherein the first claim 3 , second and third color sub-pixels are arranged in a horizontal direction in the plane of the display panel; and the first claim 3 , second and third white sub-pixels are also arranged in the horizontal direction.5. The display panel of claim 3 , wherein the first color sub-pixel is a red sub-pixel claim 3 , the second color sub-pixel is a green sub-pixel claim 3 , and ...

ARRAY SUBSTRATE AND DISPLAY DEVICE

Embodiments of the present invention relate to an array substrate and a display device comprising the array substrate. According to an embodiment of the invention, there is provided an array substrate which comprises: a terminal region; and an active pixel region, the active pixel region comprising: a plurality of pixel units; a plurality of gate lines; a plurality of data lines; and a plurality of gate leading wires, wherein two columns of the plurality of pixel units are provided between two adjacent data lines among the plurality of data lines, each of the plurality of gate leading wires is disposed between the two columns of the plurality of pixel units, and each of the plurality of gate lines is connected to respective one of the plurality of gate leading wires. 1. An array substrate , comprising:a terminal region; and a plurality of pixel units;', 'a plurality of gate lines;', 'a plurality of data lines; and', 'a plurality of gate leading wires,, 'an active pixel region, the active pixel region comprisingwherein two columns of the plurality of pixel units are provided between two adjacent data lines among the plurality of data lines, each of the plurality of gate leading wires is disposed between the two columns of the plurality of pixel units, and each of the plurality of gate lines is connected to respective one of the plurality of gate leading wires.2. The array substrate claimed as claim 1 , wherein the number of the plurality of gate lines is twice as many as the row number of the plurality of pixel units claim 1 , and two of the gate lines are provided between two rows of pixel units among the plurality of pixel units.3. The array substrate claimed as claim 1 , wherein the terminal region is located at one side or two opposed sides of the active pixel region claim 1 , within the terminal region claim 1 , there are provided a source driver and a gate driver claim 1 , the plurality of data lines each are connected to the source driver claim 1 , and the ...

TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

A thin film transistor liquid crystal display (TFT-LCD) array substrate and a manufacturing method thereof are provided. The TFT-LCD array substrate comprises a gate line and a data line. A pixel electrode and a thin film transistor (TFT) are formed in a pixel region defined by intersecting of the gate line and the data line. A light-blocking layer is formed over a TFT channel region of the thin film transistor. 1. A thin film transistor liquid crystal display (TFT-LCD) array substrate , comprising a gate line and a data line , and a pixel electrode and a thin film transistor (TFT) , which are formed in a pixel region defined by intersecting of the gate line and the data line , wherein a light-blocking layer is formed over a TFT channel region of the thin film transistor.2. The TFT-LCD array substrate according to claim 1 , wherein a source electrode and a drain electrode of the thin film transistor and the pixel electrode are formed in a same patterning process claim 1 , a transparent conductive film is formed beneath the source electrode and the drain electrode claim 1 , and the transparent conductive film beneath the drain electrode is integrally formed with the pixel electrode so that the pixel electrode is directly connected with the drain electrode.3. The TFT-LCD array substrate according to claim 1 , wherein a common electrode line for constituting a storage capacitor with the pixel electrode is further formed in the pixel region.4. The TFT-LCD array substrate according to claim 3 , wherein the common electrode line is provided in the same layer as the gate line claim 3 , and formed in the same patterning process as the gate line.5. The TFT-LCD array substrate according to claim 3 , wherein the common electrode line is provided in the same layer as the light-blocking layer claim 3 , and formed in the same patterning process as the light-blocking layer.6. The TFT-LCD array substrate according to claim 2 , wherein a common electrode line for constituting a ...

THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

A thin film transistor array substrate is disclosed. The thin film transistor array substrate includes: gate lines and data lines formed to cross each other in the center of a gate insulation film on a substrate and to define pixel regions; a thin film transistor formed at each intersection of the gate and data lines; a passivation film formed on the thin film transistors; a pixel electrode formed on each of the pixel regions and connected to the thin film transistor through the passivation film; a gate pad connected to each of the gate lines through a gate linker; and a data pad connected to each of the data lines through a data linker. The data pad is formed of a gate pattern, and the data line is formed of a data pattern. The data linker is configured to connect the data pad formed of the gate pattern with the data line formed of the data pattern using a connection wiring. Also, the data linker includes the gate pattern connected to the data pad, the data pattern formed opposite to the gate pattern in the center of the gate insulation film, and the connection wiring configured to connect the gate pattern with the data pattern through a first contact hole which exposes the data pattern and the gate pattern by penetrating through the passivation film and the gate insulation film. 1. A thin film transistor array substrate comprising:gate lines and data lines formed to cross each other in the center of a gate insulation film on a substrate and to define pixel regions;a thin film transistor formed at each intersection of the gate and data lines;a passivation film formed on the thin film transistors;a pixel electrode formed on each of the pixel regions and connected to the thin film transistor through the passivation film;a gate pad connected to each of the gate lines through a gate linker; anda data pad connected to each of the data lines through a data linker,wherein the data pad is formed of a gate pattern, the data line is formed of a data pattern, the data linker ...

ARRAY SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL AND BROKEN-LINE REPAIRING METHOD THEREOF

According to the present disclosure, there is disclosed an array substrate, a liquid crystal display panel and a broken-line repairing method thereof. The array substrate comprises: signal lines, which includes a plurality of gate lines and a plurality of data lines intersecting with each other; and a plurality of pixel units defined by the gate lines and the data lines, wherein a thin film transistor, a common electrode and a pixel electrode, which is connected to a drain of the thin film transistor, are formed in each of the pixel units, for each of the pixel units, at the positions of two corners which are adjacent to one of the data lines, a first repair area and a second repair area are formed, respectively; within the first repair area and the second repair area, patterns of the pixel electrode and the data line overlap, and there is no pattern of the common electrode. 1. An array substrate , comprising:signal lines, which includes a plurality of gate lines and a plurality of data lines intersecting with each other; anda plurality of pixel units defined by the gate lines and the data lines,wherein a thin film transistor, a common electrode and a pixel electrode, which is connected to a drain of the thin film transistor, are formed in each of the pixel units,for each of the pixel units, at the positions of two corners which are adjacent to one of the data lines, a first repair area and a second repair area are formed, respectively; within the first repair area and the second repair area, patterns of the pixel electrode and the data line overlap, and there is no pattern of the common electrode.2. The array substrate claimed as claim 1 , wherein within the first repair area and the second repair area claim 1 , the pixel electrode and the data line each are formed with protruding patterns claim 1 , and the protruding patterns of the two overlap.3. The array substrate claimed as claim 1 , wherein for the pixel unit claim 1 , at the position of one corner which is ...

LED LIGHTING DEVICES

Packaged chip-on-board (COB) LED arrays are provided where a color conversion medium is distributed within a glass containment plate, rather than silicone, to reduce the operating temperature of the color conversion medium and avoid damage while increasing light output. In accordance with one embodiment of the present disclosure, a lighting device is provided comprising a chip-on-board (COB) light emitting diode (LED) light source, a light source encapsulant, a distributed color conversion medium, and a glass containment plate. The COB LED light source comprises a thermal heat sink framework and at least one LED and defines a light source encapsulant cavity in which the light source encapsulant is distributed over the LED. The glass containment plate is positioned over the light source encapsulant cavity and contains the distributed color conversion medium. The light source encapsulant is distributed over the LED at a thickness that is sufficient to encapsulate the LED and define encapsulant thermal conduction paths Textending through the light source encapsulant to the thermal heat sink framework from the distributed color conversion medium. 1. A lighting device comprising a chip-on-board (COB) light emitting diode (LED) light source , a light source encapsulant , a distributed color conversion medium , and a glass containment plate , wherein:the COB LED light source comprises a thermal heat sink framework and at least one LED and defines a light source encapsulant cavity in which the light source encapsulant is distributed over the LED;the glass containment plate is positioned over the light source encapsulant cavity and contains the distributed color conversion medium;{'sub': 'PE', 'the light source encapsulant is distributed over the LED at a thickness that is sufficient to encapsulate the LED and define encapsulant thermal conduction paths Textending through the light source encapsulant to the thermal heat sink framework from the distributed color conversion ...

THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME

A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness. 1. A thin film transistor display panel comprising:a gate line, a gate electrode extended from the gate line, a source electrode and a drain electrode, on a substrate, and a thin film transistor comprising the gate, source and drain electrodes;a data line connected to the source electrode;a pixel electrode connected to the drain electrode;a pixel link member which is between the drain and pixel electrodes, and connects the drain and pixel electrodes to each other; anda gate pad connected to the gate electrode through the gate line, and comprising a first gate subpad extended from the gate line, a second gate subpad, and a gate pad link member which is between the first and second gate subpads and connects the first and second gate subpads to each other,wherein thicknesses of the pixel link member and the gate pad link member are substantially the same.2. The thin film transistor display panel of claim 1 , wherein the pixel link member and the gate pad link member comprise a first material claim 1 , and the data line comprises a second material which is the same as the first material.3. The thin film transistor display panel of claim 2 , wherein the source electrode and the drain electrode comprise a third material claim 2 , which is different from the second material.4. The thin film transistor display panel of claim 3 , wherein a thickness of the second material of the data line is larger than a thickness of the third material of the source ...

Solid state white light emitter and display using same

A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and which in exposure to said first, relatively shorter wavelength radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is down-converted to white light by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors in a polymeric matrix.

COB-Typed LED Light Board

A COB-typed LED light board for providing mixing light includes a substrate and a plurality of COB light bodies. The COB light bodies, which are provided on a mounting surface of the substrate, emit light with two or more different spectrums. A space distance between the adjacent two LED chips is smaller than 20 mm and is larger than a width of a single LED chip, the outer surface of a glue body which does not contact the mounting surface is provided to contact external atmosphere, and a middle portion of the glue body, formed by cohesion, is higher than a periphery portion thereof, to thus have the COB light bodies with excellent heat dissipation and an even mixing light.

LIGHT EMITTING DEVICE

Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.

LIGHT-EMITTING DIODE DEVICE

A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 μm, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%. 1. A two dimensional array light-emitting diode device , comprising:a transparent substrate comprising a first surface;a plurality of light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units comprising a plurality of sides and a circumference; anda plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units;wherein the sides of each of the light emitting units comprising a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 μm, the sides are not near the closest light-emitting diode units;wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%.2. The two dimensional array light-emitting diode device of claim 1 , wherein the light-emitting diode units are formed on the ...

Light-emitting element package and display device

A light-emitting element package includes plural substrates and plural light-emitting elements disposed on each of the substrates. The light-emitting elements are arranged on each substrate so that an arrangement of the light-emitting elements on each substrate becomes same in an arrangement state in which the substrates are arranged with a regular pitch along a first direction and a second direction which are directions perpendicular to the substrate. The light-emitting elements are arranged on each substrate so that a pitch of the light-emitting elements on each substrate is equal to a pitch of the light-emitting elements between the neighboring substrates in the arrangement state of the substrates.

METHOD FOR COMBINING LEDS IN A PACKAGING UNIT AND PACKAGING UNIT HAVING A MULTIPLICITY OF LEDS

A method of combining LEDs in a packaging unit includes determining a color locus of a multiplicity of LEDs, classifying the LEDs into a plurality of different color locus ranges, each LED classified into a color locus range comprising the determined color locus of the respective LED, arranging the LEDs in the packaging unit such that the packaging unit contains a plurality of successive sequences respectively of a plurality of LEDs, wherein each sequence respectively has exactly one LED from each of the color locus ranges, and the LEDs of the different color locus ranges are respectively arranged in the same order within the sequences. 1. A method of combining LEDs in a packaging unit , comprising:determining a color locus of a multiplicity of LEDs,classifying the LEDs into a plurality of different color locus ranges, each LED classified into a color locus range comprising the determined color locus of the respective LED,arranging the LEDs in the packaging unit such that the packaging unit contains a plurality of successive sequences respectively of a plurality of LEDs, wherein each sequence respectively has exactly one LED from each of the color locus ranges, and the LEDs of the different color locus ranges are respectively arranged in the same order within the sequences.2. The method according to claim 1 , wherein the LEDs are classified into 3 to 8 color locus ranges.3. The method according to claim 1 , wherein 500 to 20 claim 1 ,000 LEDs are arranged in the packaging unit.4. The method according to claim 1 , wherein the start of the sequences arranged in the packaging unit is respectively marked.5. The method according to claim 1 , wherein the packaging unit is a roll on which the sequences of LEDs are successively arranged.6. A packaging unit having a multiplicity of LEDs comprising LEDs from a plurality of different color locus ranges claim 1 , whereineach LED is assigned to one of the color locus ranges, comprising the color locus of radiation emitted by the ...

LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

Discussed are a liquid crystal display device and a method of fabricating the same in which a single common line is formed at the center of a substrate, which results in an enhanced aperture ratio and transmittance. The liquid crystal display device includes a single common line located at a center of a substrate; a first group of unit pixels located in a right portion of the substrate on the basis of the common line and a second group of unit pixels located in a left portion of the substrate on the basis of the common line, each unit pixel defined by a plurality of gate lines and data lines orthogonally intersecting each other; and a plurality of thin film transistors formed at a right side of the respective unit pixels of the first group and at a left side of the respective unit pixels of the second group. 1. A liquid crystal display device comprising:a single common line located at a center of a substrate;a first group of unit pixels located in a right portion of the substrate on the basis of the common line and a second group of unit pixels located in a left portion of the substrate on the basis of the common line, each unit pixel defined by a plurality of gate lines and data lines orthogonally intersecting each other; anda plurality of thin film transistors formed at a right side of the respective unit pixels of the first group and at a left side of the respective unit pixels of the second group.2. The device according to claim 1 , wherein claim 1 , each gate line is located at the right side of the respective unit pixels in the first group of unit pixels claim 1 , and each gate line is located at the left side of the respective unit pixels in the second group of unit claim 1 , wherein the gate lines are parallel to the single common line.3. The device according to claim 1 , wherein each unit pixel includes:a thin film transistor formed on the lower substrate;at least one of insulating film on the substrate including the thin film transistor;a common electrode ...

LIGHT EMITTING DEVICE

A light emitting device includes a substrate elongated in a lengthwise direction; a plurality of LED chips disposed on the substrate in an intermediate region in widthwise direction, and aligned along the lengthwise direction at a distance of 80 μm or less; and interconnection wirings formed on regions outside the intermediate region in the widthwise direction; wherein each of the LED chips has a p-side electrode disposed on the substrate, a p-type semiconductor layer disposed on the p-side electrode, an active layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the active layer, and has a region in which the n-type semiconductor layer, the active layer, and the p-type semiconductor layer are patterned, and an n-side electrode formed selectively on a surface of the n-type semiconductor layer and connected to the p-side electrode of an adjacent LED chip through the interconnection wiring. 1. A light emitting device comprising:a substrate elongated in a lengthwise direction and having a widthwise direction perpendicular to the lengthwise direction;a plurality of LED chips disposed on the substrate in an intermediate region in the widthwise direction, and aligned along the lengthwise direction; andinterconnection wirings formed on regions outside of the intermediate region in the widthwise direction,wherein distances between adjacent pair of the LED chips aligned along the lengthwise direction is 80 μm or less, andeach of the LED chips has a p-side electrode disposed on the substrate, a p-type semiconductor layer disposed on the p-side electrode and connected electrically to the p-side electrode, an active layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the active layer, and has a region in which the n-type semiconductor layer, the active layer, and the p-type semiconductor layer are patterned, andan n-side electrode formed selectively on a surface of the n-type semiconductor layer and ...

DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

A display device is provided, which includes a transparent substrate, an active device array, a solar cell structure and an electrophoretic display film. The transparent substrate has an upper surface and a lower surface opposite to each other. The active device array has a plurality of pixel structures, in which the pixel structures are disposed on the upper surface of the transparent substrate. The solar cell structure is directly disposed on the lower surface of the transparent substrate. The electrophoretic display film is disposed over the transparent substrate and includes a transparent protection film, an electrode layer and a plurality of display media, in which the electrode layer is disposed between the transparent protection film and the display media and the display media are located between the electrode layer and the active device array. 1. A display device , comprising:a transparent substrate, having an upper surface and a lower surface opposite to each other;an active device array, having a plurality of pixel structures, wherein the pixel structures are disposed on the upper surface of the transparent substrate;a solar cell structure, directly disposed on the lower surface of the transparent substrate; andan electrophoretic display film, disposed over the transparent substrate and comprising a transparent protection film, an electrode layer and a plurality of display media, wherein the electrode layer is disposed between the transparent protection film and the display media and the display media are located between the electrode layer and the active device array.2. The display device as claimed in claim 1 , wherein the solar cell structure comprises a plurality of cell units claim 1 , each of the cell units comprises a first conductive layer claim 1 , a second conductive layer and a photovoltaic layer claim 1 , the first conductive layer is directly disposed on the lower surface of the transparent substrate and the photovoltaic layer is located ...

SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE AND ILLUMINATION APPARATUS

A semiconductor light emitting device includes a substrate, a semiconductor laminate disposed on the substrate and divided to a plurality of light emitting cells with an isolation region, and a wiring unit electrically connecting the plurality of light emitting cells. A region of lateral surfaces of each of the light emitting cells in which the wiring unit is disposed has a slope gentler than slopes of other regions of the lateral surfaces of each of the light emitting cells. 1. A semiconductor light emitting device , comprising:a substrate;a semiconductor laminate disposed on the substrate and divided to a plurality of light emitting cells with an isolation region; anda wiring unit electrically connecting the plurality of light emitting cells,wherein a region of lateral surfaces of each of the light emitting cells in which the wiring unit is disposed has a slope gentler than slopes of other regions of the lateral surfaces of each of the light emitting cells.2. The semiconductor light emitting device of claim 1 , wherein:the plurality of light emitting cells have a plurality of lateral surfaces, respectively, andthe region in which the wiring unit is disposed is a portion of at least one lateral surface of the light emitting cells.3. The semiconductor light emitting device of claim 2 , wherein the region in which the wiring unit is disposed has a recess portion having a sloped surface gentler than a sloped surface of other regions of the lateral surfaces of each of the light emitting cells.4. The semiconductor light emitting device of claim 1 , wherein a slope angle of the lateral surface in the region in which the wiring unit is disposed is less than a slope angle of a lateral surface in lateral surface regions of the light emitting cells different than the lateral surface in the region in which the wiring unit is disposed claim 1 , by about 10° or more.5. The semiconductor light emitting device of claim 4 , wherein:a slope angle of the lateral surface in the ...

Method for forming light-emitting device

A method for forming a light-emitting device of the present application comprises providing a wafer; forming a first plurality of light-emitting elements on the wafer; providing a first connection structure to connect each of the first plurality of light-emitting elements; and applying a current flow to one of the first plurality of light-emitting elements for testing at least one electrical property of the light-emitting element while no current flow is applied to the remaining of the first plurality of light-emitting elements.

QUANTUM DOT CONTAINING OPTICAL ELEMENT

An illumination device including a light source positioned at the distal end of a reflecting unit and a heat sink light transmissive substrate including quantum dots positioned at the proximal end of the reflecting unit with the reflecting unit having one or more reflecting side walls and a reflecting bottom wall and with the light source being separated a distance from the light transmissive substrate including quantum dots. In certain embodiments, the light source is an LED. 1. An illumination device comprisinga light source positioned at the distal end of a reflecting unit and a heat sink light transmissive substrate including quantum dots positioned at the proximal end of the reflecting unit with the reflecting unit having one or more reflecting side walls and a reflecting bottom wall and with the light source being separated a distance from the light transmissive substrate including quantum dots.2. The illumination device of wherein the light transmissive substrate includes quantum dots on a surface area of the light transmissive substrate corresponding to the surface area of the light source.3. The illumination device of wherein the quantum dots are confined to an area roughly equal to or slightly larger than the corresponding area of the light source.4. The illumination device of wherein the light transmissive substrate includes a plurality of areas confined to quantum dots.5. The illumination device of wherein the light transmissive substrate includes a plurality of areas confined to quantum dots which correspond to a plurality of LEDs.6. The illumination device of wherein the quantum dots occupy less than 90% of the surface area of the light transmissive substrate.7. The illumination device of wherein the quantum dots occupy less than 80% of the surface area of the light transmissive substrate.8. The illumination device of wherein the quantum dots occupy less than 70% of the surface area of the light transmissive substrate.9. The illumination device of ...

SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE, AND ELECTRONIC APPARATUS

A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode. 1. A semiconductor light emitting device comprising:a first compound semiconductor layer;an active layer on the first compound semiconductor layer;a second compound semiconductor layer on the active layer, the second compound semiconductor layer including a clad layer and a contact layer in this order proceeding from the active layer; andan electrode on the contact layer, 'the contact layer is smaller than the clad layer.', 'wherein,'}2. The semiconductor light emitting device of claim 1 , wherein the contact layer is substantially the same size as the electrode.3. The semiconductor light emitting device of claim 1 , wherein the electrode covers the contact layer.4. The semiconductor light emitting device of claim 2 , wherein the average area Sof the contact layer and the average area Sof the electrode satisfy the relation of:{'br': None, 'i': S', '/S, 'sub': 2', '1, '½≦≦2.'}5. The semiconductor light emitting device of claim 2 , wherein the average area Sof the contact layer and the average area Sof the electrode satisfy the relation of:{'br': None, 'i': S', '/S, 'sub': 2', '1, '=1.05.'}6. The semiconductor light emitting device of claim 1 , wherein the active layer includes a GaInP compound semiconductor layer and is doped with an impurity.7. The semiconductor light emitting device of claim 6 , wherein the doping concentration of an n-type impurity in the active layer is in the range of 5×10/cmto 1×10/cm.8. The semiconductor light emitting device of claim 6 , wherein the first compound semiconductor layer includes a first AlGaInP compound semiconductor layer claim 6 , and the clad layer is a second AlGaInP compound semiconductor layer.9. The semiconductor light emitting device of claim 8 ...

ARRAY SUBSTRATE OF DISPLAY PANEL

An array substrate of display panel includes a plurality of gate lines, common lines, data lines and repairing segments. The data line includes a first data line, and the common line includes a first common line. The first common line penetrates through first, second and third pixel areas, and the first data line has a broken line defect on a side of the first pixel area. The first common line has a first cutting part in the second pixel area and a second cutting part in the third pixel area, and the first common line between the first and second cutting parts forms a floating common repairing segment. In the second pixel area, the first data line is electrically connected to the common repairing segment through the repairing segment. In the third pixel area, the first data line is electrically connected to the common repairing line through the repairing segment. 1. An array substrate of a display panel , comprising:a substrate;a first patterned conducting layer disposed on the substrate, the first patterned conducting layer comprising a plurality of gate lines;a second patterned conducting layer disposed on the substrate, the second patterned conducting layer comprising a plurality of data lines and a plurality of common lines, wherein the gate lines and the data lines are intersected to define a plurality of pixel areas, the data lines comprise a first data line, the common lines comprise a first common line, the pixel areas comprise a first pixel area, a second pixel area and a third pixel area, the first pixel area, the second pixel area and the third pixel area are disposed on a same side of the first data line, the first pixel area is disposed between the second pixel area and the third pixel area, the first common line penetrates through the first pixel area, the second pixel area and the third pixel area, and the first data line has a broken line defect disposed on a side of the first pixel area; anda plurality of repairing segments disposed in each of the ...

Light emitting device, display apparatus, and illuminating apparatus

A light emitting device includes an excitation light source element that emits excitation light; a substrate that faces the excitation light source element; a fluorescent layer located on the substrate, the fluorescent layer being excited by the excitation light to emit fluorescence; an optical reflection body disposed on a side surface of the fluorescent layer, the side surface extending in a direction parallel to a stacking direction of the substrate and the fluorescent layer; and a low-refractive-index material layer disposed between the fluorescent layer and the substrate, the low-refractive-index material layer having a refractive index lower than that of the substrate.

High voltage light emitting diode and fabricating method thereof

A method for fabricating a high voltage light emitting diode (HV LED) includes: calculating a total area of the HV LED according to a predetermined light emission luminance; calculating the number of sub-LEDs according to a predetermined operating voltage; subtracting, from the total area, areas of isolation trenches between the sub-LEDs, electrode areas and areas of series-connected conductive leads between the sub-LEDs, and then dividing the difference obtained through the subtraction by the number of the sub-LEDs, so as to calculate an effective light emission area of each of the sub-LEDs; and according to the effective light emission area, adjusting the area of a sub-LED having an electrode and the area of a sub-LED having no electrode, so as to enable the area of the sub-LED having an electrode to be greater than the area of the sub-LED having no electrode. An HV LED manufactured by the above method.

SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND MANUFACTURING METHOD THEREOF, LIGHT EMITTING MODULE, AND ILLUMINATION APPARATUS

A semiconductor light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes first and second conductive semiconductor layers having an active layer formed therebetween, and first and second electrodes formed on the first and second layers. A first insulation layer is formed on portions of the light emitting cell, while a second insulation layer entirely covers at least one light emitting cell. A method of manufacturing the semiconductor light emitting device, and a light emitting module and an illumination apparatus including the semiconductor light emitting device are also provided. 1. A semiconductor light emitting device , comprising:a substrate,a plurality of light emitting cells disposed on the substrate, wherein each light emitting cell includes a first conductive semiconductor layer and wherein at least a portion of the first conductive semiconductor layer has an active layer and a second conductive semiconductor layer disposed on a top surface thereof;first and second electrodes disposed on the first and second conductive semiconductor layers, respectively, of each light emitting cell among the plurality of light emitting cells;an interconnection part connecting the first or second electrode of one light emitting cell to the first or second electrode of another light emitting cell adjacent to the one light emitting cell among the plurality of light emitting cells;a first insulation layer covering a surface of at least one light emitting cell among the plurality of light emitting cells and disposed on at least a portion of a surface of the light emitting cell other than a portion thereof facing the first electrode; anda second insulation layer disposed on the first insulation layer so as to entirely cover at least one light emitting cell among the plurality of light emitting cells.2. The semiconductor light emitting device of claim 1 , wherein in each light emitting cell among ...

Circuit Board, LED Light Strip and Method for Making the LED Light Strip

The present invention discloses a printed circuit board, a LED light strip and a method for making the LED light strip. A LED light source is disposed on the printed circuit board, and at least a portion thereof is covered with a layer of white heat dissipating paint. By way of this arrangement, the printed circuit board is partially deployed with a layer of heat dissipating material so as to increase the heat dissipation thereof. As a result, the heat built-up from LED light source on the printed circuit board can be effectively dissipated.

Light emitting devices and methods

Light emitting devices and methods are disclosed. In one embodiment a light emitting device can include a submount and a plurality of light emitting diodes (LEDs) disposed over the submount. At least a portion of the submount can include a reflective layer at least partially disposed below a solder mask. One or more layers within the submount may include one or more holes, a rough surface texture, or combinations thereof to improve adhesion within the device. The device can further include a retention material dispensed about the plurality of LEDs. Devices and methods are disclosed for improved solder mask adhesion.

LCD panel and manufacturing method for the same

The present invention relates to a liquid crystal display (LCD) panel and its manufacturing method. The LCD panel comprises a first substrate, a second substrate, a sealant, and a barrier wall. The first substrate and the second substrate are disposed relatively. The sealant disposed surrounding between the first substrate and the second substrate. The barrier wall is disposed at the outer side of the area surrounded by the sealant, and the barrier wall is respectively abutted against the first substrate and the second substrate. In summary, the present invention could improve the overflow of the sealant, reducing the difficulty for narrow frame design and the requirement for cutting precision of the LCD panel. 1. An LCD panel comprising:a first substrate;a second substrate disposed relatively to the first substrate;a sealant disposed surrounding between the first substrate and the second substrate: anda barrier wall disposed between the first substrate and the second substrate, wherein the barrier wall is disposed at the outer side of the area surrounded by the sealant, and the barrier wall is respectively abutted against the first substrate and the second substrate, and the side surface of the barrier wall near the sealant is located at the inner side of the cutting line of the LCD panel;wherein, the first substrate is a color filter substrate and the second substrate is a thin film transistor array substrate; or the first substrate is a thin film transistor array substrate and the second substrate is a color filter substrate.2. The LCD panel according to claim 1 , wherein the LCD panel further comprises a spacer and a color resist disposed between the first substrate and the second substrate claim 1 , and the material of the barrier wall and the spacer or the color resist are the same.3. The LCD panel according to claim 1 , wherein the height of the barrier wall is equal to the gap between the first substrate and the second substrate after lamination.4. An LCD ...

DISPLAY DEVICE AND ELECTRONIC DEVICE

An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootstrap transistor. When the start signal is input, a potential is supplied to the gate electrode of the transistor through the switch, and the transistor is turned off. The transistor is turned off, so that leakage of a charge from the gate electrode of the bootstrap transistor can be prevented. Accordingly, time for storing a charge in the gate electrode of the bootstrap transistor can be shortened, and high-speed operation can be performed. 1. (canceled)2. A display device comprising:a pixel; anda driver circuit,wherein the driver circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor,wherein a first terminal of the first transistor is electrically connected to a fourth wiring, and a second terminal of the first transistor is electrically connected to a third wiring,wherein a first terminal of the second transistor is electrically connected to a sixth wiring, and a second terminal of the second transistor is electrically connected to the third wiring,wherein a first terminal of the third transistor is electrically connected to a seventh wiring, and a gate of the third transistor is electrically connected to the seventh wiring,wherein a first terminal of the fourth transistor is electrically connected to the sixth wiring, and a gate of the fourth transistor is electrically connected to a gate of the first transistor,wherein a first terminal of the fifth transistor is electrically connected to a first wiring, a second terminal of the fifth transistor is electrically connected to the gate of the first transistor, and a gate of the fifth transistor is electrically ...

DISPLAY DEVICE

The invention provides an active matrix EL display device which can perform a clear multi-gray scale color display. In particular, the invention provides a large active matrix EL display device at low cost by a manufacturing method which can selectively form a pattern. Power supply lines in a pixel portion are arranged in matrix by the manufacturing method which can selectively form a pattern. Further, capacitance between wirings is reduced by providing a longer distance between adjacent wirings by the manufacturing method which can selectively form a pattern. 1. (canceled)2. A semiconductor device comprising: a gate electrode over the substrate;', 'a first insulating layer over the gate electrode;', 'a semiconductor layer over the first insulating layer;', 'a second insulating layer over the semiconductor layer;', 'a source electrode over the second insulating layer, the source electrode electrically connected to the semiconductor layer;', 'a drain electrode over the second insulating layer, the drain electrode electrically connected to the semiconductor layer;', 'a first electrode electrically connected to one of the source electrode and the drain electrode;', 'a third insulating layer over the first electrode;', 'an electroluminescent layer over the first electrode and the third insulating layer;', 'a second electrode over the electroluminescent layer and the third insulating layer; and', 'a color filter arranged so that light emitted from the electroluminescent layer enters;, 'a first pixel over a substrate, wherein the first pixel comprisesa second pixel over the substrate;a third pixel over the substrate;a fourth pixel over the substrate;a first line electrically connected to the first pixel and the second pixel, wherein the first line is electrically connected to the other one of the source electrode and the drain electrode;a second line electrically connected to the first line; anda third line electrically connected to the third pixel and the fourth pixel ...

LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel. 1. (canceled)2. A light-emitting device comprising: a gate electrode comprising a conductive material;', 'a semiconductor film; and', 'a gate insulating layer between the gate electrode and the semiconductor film;, 'a first transistor and a second transistor, each of the first transistor and the second transistor comprisinga first electrode electrically connected to one of a source and a drain of the second transistor:an insulating layer which covers an end portion of the first electrode;a spacer over the insulating layer;an EL layer over the first electrode;a second electrode over the EL layer;a first substrate over the second electrode; anda resin material which fills a space between the second electrode and the first substrate,wherein one of the source and the drain of the first transistor is electrically connected to the gate electrode of the second transistor, andwherein the semiconductor film does not extend beyond an edge of the gate insulating layer.3. The light-emitting device according to claim 2 , wherein the semiconductor film is provided over the gate electrode.4. The light-emitting device according to claim 2 , wherein the gate insulating layer has an island-like shape.5. The light-emitting device according to claim 2 , further comprising a protective film over the first transistor and the second transistor.6. The light-emitting device according to claim 2 , wherein the conductive material ...

DISPLAY PANEL

A display panel including a substrate, a meshed shielding pattern, and a plurality of light-emitting devices is provided. The meshed shielding pattern is disposed on the substrate so as to define a plurality of pixel regions on the substrate. The light-emitting devices are disposed on the substrate. At least one light-emitting device of the light-emitting devices is disposed in each pixel region of the pixel regions, wherein an area of the pixel region is A1, an area of the light-emitting device is A2, and a ratio of A2 to A1 is below 50%. 1. A display panel , comprising:a substrate;a meshed shielding pattern disposed on the substrate so as to define a plurality of pixel regions on the substrate; anda plurality of light-emitting devices disposed on the substrate, wherein at least one light-emitting device of the light-emitting devices is disposed in each pixel region of the pixel regions, an area of each pixel region is A1, an area of the at least one light-emitting device is A2, and a ratio of A2 to A1 is below 50%.2. The display panel of claim 1 , wherein the ratio of A2 to A1 is 0.01%-25%.3. The display panel of claim 1 , further comprising a diffusion adhesive disposed in one pixel region of the pixel regions claim 1 , wherein the diffusion adhesive covers the at least one light-emitting device in the pixel region.4. The display panel of claim 3 , further comprising an optical adhesive disposed in one pixel region of the pixel regions claim 3 , wherein an area of the optical adhesive is A3 claim 3 , and a ratio of A3 to A1 is 6%-65%.5. The display panel of claim 1 , wherein any one of the light-emitting devices is partially embedded in the meshed shielding pattern and the meshed shielding pattern at least exposes one side of the light-emitting device.6. The display panel of claim 1 , wherein a plurality of light-emitting devices stacked upon one another are disposed in each pixel region of the pixel regions.7. The display panel of claim 1 , wherein a plurality ...

LED MODULE AND LIGHTING DEVICE

The present invention relates to lighting field, provides an LED module, the LED module comprises a cuttable LED holder and a detachable drive circuit, the LED holder is provided with a plurality of LED lighting units with different power and different color temperature, the LED lighting unit comprises one or more LED chips and a packaging layer arranged at an outside of the LED chip, the drive circuit is connected to the LED chips and used for driving one or more of the LED chips to light. The LED module can be cut into modular units with required power, lighting color and color temperature, the LED module can be made by a kind of process to avoid the usage of various material and production devices, numerous and complicated processes aren't required, thus the problem of resource waste in the production of the LED module and low production efficiency is solved. 110-. (canceled)11. An LED module , characterized in that the LED module comprises a cuttable LED holder and a detachable drive circuit so that the LED module can be cut in any manner to obtain modular units with different lighting color temperature and power , the LED holder is provided with a plurality of LED lighting units with different power and different color temperature , the LED lighting unit comprises one or more LED chips and a packaging layer arranged at an outside of the LED chips , the drive circuit is connected to the LED chips and used for driving one or more of the LED chips to light , emergent light emitted by the LED lighting units comprises monochromatic light , daylight white light with color temperature 5000K˜10000K , warm white with color temperature 2400˜3500K and natural white light with color temperature 3500K˜5000K.12. The LED module of claim 11 , wherein the LED chip is a red LED chip claim 11 , a green LED chip claim 11 , a blue LED chip or any combination of the red LED chip claim 11 , the green LED chip claim 11 , the blue LED chip.13. The LED module of claim 11 , wherein all ...

Parallel plate slot emission array

Parallel plate slot emission array. In accordance with an embodiment of the present invention, an article of manufacture includes a side-emitting light emitting diode configured to emit light from more than two surfaces. The article of manufacture includes a first sheet electrically and thermally coupled to a first side of the light emitting diode, and a second sheet electrically and thermally coupled to a second side of the light emitting diode. The article of manufacture further includes a plurality of reflective surfaces configured to reflect light from all of the surfaces of the light emitting diode through holes in the first sheet. The light may be reflected via total internal reflection.

3D LIQUID CRYSTAL DISPLAY DEVICE AND PIXEL STRUCTURE THEREOF

The present invention discloses a 3D liquid crystal display device and a pixel structure thereof. The pixel structure includes three gate lines, a data line and three pixel electrodes. The gate lines are arranged along a first direction and cross the data line to define three sub-pixel regions. Each of the pixel electrodes includes a primary electrode portion and an extension electrode portion. The primary electrode portion of each of the pixel electrodes is disposed in the corresponding sub-pixel region, and the extension electrode portions of all the pixel electrodes are disposed together in one of the sub-pixel regions. The pixel structure can improve a color washout problem of the 3D liquid crystal display device under top or bottom view angles. 1. A pixel structure of a 3D liquid crystal display device comprising:three gate lines arranged along a first direction;a data line crossing the gate lines to define three sub-pixel regions, and the three sub-pixel regions are a first sub-pixel region, a second sub-pixel region and a third sub-pixel region, and the sub-pixel regions are arranged along the first direction;three pixel electrodes which are a first pixel electrode, a second pixel electrode and a third pixel electrode, and each of the pixel electrodes has a primary electrode portion and an extension electrode portion connected to the primary electrode portion, wherein the primary electrode portions of the first, second and third pixel electrodes are disposed in the first, second and third sub-pixel regions, respectively; the extension electrode portions of the first, second and third pixel electrodes are disposed in the first sub-pixel region; andthree thin-film transistors which are a first thin-film transistor, a second thin-film transistor and a third thin-film transistor, and the thin-film transistors are disposed in the first, second and third sub-pixel regions, respectively, wherein a gate of each of the thin-film transistors is electrically connected ...

Liquid Crystal Display Panel and Repair Method Thereof

The present invention provides a LCD panel and a method for repairing the LCD panel. The LCD panel includes a plurality of data lines and a plurality of subpixel areas. Each subpixel area includes a corresponding pixel electrode and thin film transistor. The subpixel area including a spot defect is electrically connected to a neighboring subpixel area having the same color and in normal operation. The connection between the thin film transistor in the subpixel area including the spot defect and the corresponding data line and the connection between the thin film transistor and the corresponding pixel electrode are cut. Consequently, the subpixel area including the bright spot defect is repaired and able to display normally. The display quality of the LCD panel display is improved. Moreover, the present invention repair method is suitable for the repairing of LCD panels without storage capacitors. 1. A liquid crystal display panel , comprising:a plurality of data lines, a plurality of scan lines crossing the plurality of data lines, a plurality of subpixel areas defined by two neighboring data lines and two neighboring scan lines crossing the two neighboring data lines, each of the subpixel areas comprising, a corresponding pixel electrode and a thin film transistor electrically connected to the pixel electrode, a gate electrode of the thin film transistor electrically connected to one of the scan line, a source electrode of the thin film transistor electrically connected to one of the data lines, and a drain electrode of the thin film transistor electrically connected to the corresponding pixel electrode,wherein a corresponding pixel electrode of a subpixel area comprising a spot defect and a corresponding pixel electrode of a neighboring subpixel area in normal operation are electrically connected through a metal line, and the subpixel area comprising the spot defect and the neighboring subpixel area in normal operation have the same color;the electrical connection ...

LIGHTING MODULE FOR EMITTING MIXED LIGHT

A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element. 1. A lighting module for emitting mixed light comprising:at least one first semiconductor component which emits unconverted red light,at least one second semiconductor component which emits converted greenish-white light having a first conversion proportion,at least one third semiconductor component which emits converted greenish-white light having a second conversion proportion, which is less than the first conversion proportion,at least one resistance element having a temperature-dependent electrical resistance, whereinthe second semiconductor component is connected in parallel with the third semiconductor component.2. The lighting module according to claim 1 , wherein the first semiconductor component is interconnected with the resistance element claim 1 , the second and the third semiconductor component in such a way that a color locus of the mixed light is stable as the temperature increases.3. The lighting module according to claim 1 , wherein a current through the first semiconductor component decreases as the temperature rises.4. The lighting module according to claim 3 , which comprises a string comprising the resistance element and the third semiconductor component claim 3 , wherein the resistance element forms a series circuit with the third semiconductor component and has a positive temperature coefficient.5. The lighting module according to claim 1 , wherein the ...

LIGHT-EMITTING-ELEMENT MOUNT SUBSTRATE AND LED DEVICE

A light-emitting-element mount substrate formed by relatively simple manufacturing steps, having a good heat release property, and having a high mechanical strength; and an LED device including the light-emitting-element mount substrate are provided. A substrate body of a light-emitting-element mount substrate is made of a low-resistance semiconductor (e.g., n-type silicon) substrate, and is divided into a first and second individual substrate bodies by an insulating layer. A first front-surface mounting electrode and a first external-connection electrode are formed on respective first and second major surfaces (e.g., front and back surfaces) of the first individual substrate body. A second front-surface mounting electrode and a second external-connection electrode are formed respective first and second major surfaces (e.g., front and back surfaces) of the second individual substrate body. The insulating layer has a shape different from a straight-line shape in plan view. 1. A light-emitting-element mount substrate , comprising:a substrate body including a low-resistance semiconductor substrate and an insulating layer that divides the low-resistance semiconductor substrate into a first semiconductor substrate body and a second semiconductor substrate body, which are insulated from each other;a first surface mounting electrode provided on a first major surface of the first semiconductor substrate body;a first external-connection electrode provided on a second major surface of the first semiconductor substrate body;a second surface mounting electrode provided on a first major surface of the second semiconductor substrate body; anda second external-connection electrode provided on a second major surface of the second semiconductor substrate body,wherein the insulating layer has a shape different from a straight-line shape in plan view.2. The light-emitting-element mount substrate according to claim 1 , further comprising an electrostatic-destruction prevention layer ...

LIGHT EMITTING DEVICE FOR AC POWER OPERATION

Exemplary embodiments of the present invention disclose a light-emitting device including a first power source connection terminal and a second power source connection terminal, the first and second power source connection terminals configured to be connected to an external power source, and a plurality of light emitting cell arrays, each of the plurality of light emitting cell arrays being connected in parallel to one another between the first and the second power source connection terminals, each of the plurality of light emitting cell arrays comprising serially connected light emitting cells. Each of the light emitting cells includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an electrode pad disposed on the second conductivity-type semiconductor layer. 1. A light-emitting device , comprising:a first power source connection terminal and a second power source connection terminal, the first and second power source connection terminals configured to be connected to an external power source; and a first conductivity-type semiconductor layer;', 'a second conductivity-type semiconductor layer;', 'an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; and', 'an electrode pad disposed on the second conductivity-type semiconductor layer., 'a plurality of light emitting cell arrays, each of the plurality of the light emitting cell arrays being connected in parallel to one another between the first and the second power source connection terminals, each of the plurality of light emitting cell arrays comprising serially connected light emitting cells, each of the light emitting cells comprising;'}2. The light-emitting device of claim 1 , wherein each of the plurality of light emitting cell arrays is disposed ...

Array substrate and LCD panel

The present invention discloses an array substrate, comprising: multiple pixel units arranged in an array having rows and columns, and each of the pixel units comprises a pixel electrode, and the pixel electrode comprises at least a trunk portion corresponding to an opaque dark area; and multiple scan lines, and each of the scan lines is disposed within the vertical projection of the trunk portion for inputting a scanning signal to one of the pixel units. The present invention also discloses an LCD panel. By the above way, the present invention can improve the transmittance and the aperture ratio of the LCD panel. 1. An array substrate comprising:multiple pixel units arranged in an array having rows and columns, and each of the pixel units comprises a pixel electrode and a color resist layer, and the pixel electrode comprises at least a trunk portion corresponding to an opaque dark area; andmultiple scan lines, and each of the scan lines is disposed within the vertical projection of the trunk portion for inputting a scanning signal to one of the pixel units;wherein, the color resist layer is located between the trunk portion and the scan line; the array substrate comprises a display area, and the multiple pixel units are divided into first pixel units and second pixel units, and the first pixel units are located in the display area, and the second pixel units are located outside the display area and adjacent to the edge of the display area, and at least one of the scan lines is disposed within the vertical projection of the trunk portion of the opaque dark area corresponding to the second pixel units.2. The array substrate according to claim 1 , wherein claim 1 , each of the pixel units has a long side and a short side claim 1 , and the long side is parallel to a row direction claim 1 , and the short side is parallel to a column direction claim 1 , and each of the scan lines is parallel to the long side.3. The array substrate according to claim 2 , wherein claim 2 , ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE INCLUDING TRANSPARENT PLATE WITH SLANTED SIDE SURFACE

In a semiconductor light-emitting device including a substrate, a semiconductor light-emitting element mounted on a top surface of the substrate, a transparent plate adapted to cover a top surface of the semiconductor light-emitting element, a wavelength-converting layer formed between a top surface of the semiconductor light-emitting element and a bottom surface of the transparent plate, and a reflective material layer surrounding all side surfaces of the semiconductor light-emitting element, the wavelength-converting layer and the transparent plate, at least one of the side surfaces of the transparent plate is slanted in an inward direction at the bottom surface of the transparent plate. 1. A semiconductor light-emitting device comprising;a substrate;a semiconductor light-emitting element mounted on a top surface of said substrate;a transparent plate adapted to cover a top surface of said semiconductor light-emitting element;a wavelength-converting layer formed between a top surface of said semi conductor light-emitting element and a bottom surface of said transparent plate; anda reflective material layer surrounding all side surfaces of said semiconductor light-emitting element, said wavelength-converting layer and said transparent plate,at least one of the side surfaces of said transparent plate being slanted in an inward direction at the bottom surface of said transparent plate.2. The semiconductor light-emitting device as set forth in claim 1 , further comprising a frame mounted on a periphery of the top surface of said substrate claim 1 ,said reflective material layer being disposed between said semiconductor light-emitting element and said frame, between said wavelength-converting layer and said frame, and between said transparent plate and said frame.3. The semiconductor light-emitting device as set forth in claim 1 , wherein said wavelength-converting layer includes phosphor particles and spacer particles claim 1 , a thickness of said wavelength-converting ...

DISPLAY PANEL

A display device includes a plurality of pixel units. Each of the pixel units at least includes three sub-pixels for displaying different colors. The three sub-pixels are electrically connected to three different gate lines, and at least two of the three sub-pixels are electrically connected to the same data line. 1. A display panel , comprising:a first pixel unit and a second pixel unit, sequentially arranged in a first column;whereinthe first pixel unit at least comprises a first sub-pixel, a second sub-pixel and a third sub-pixel configured to display different colors, respectively, the first sub-pixel of the first pixel unit is electrically connected to a third gate line and a first data line, the second sub-pixel of the first pixel unit is electrically connected to a second gate line and the first data line, and the third sub-pixel of the first pixel unit is electrically connected to a first gate line, andthe second pixel unit at least comprises a fourth sub-pixel, a fifth sub-pixel and a sixth sub-pixel configured to display different colors, respectively, the fourth sub-pixel of the second pixel unit is electrically connected to a fourth gate line, the fifth sub-pixel of the second pixel unit is electrically connected to a fifth gate line and a second data line, and the sixth sub-pixel of the second pixel unit is electrically connected to a sixth gate line and the second data line, wherein the first data line and the second data line, which are arranged sequentially, intersect the first gate line, the second gate line, the third gate line, the fourth gate line, the fifth gate line and the sixth gate line, which are arranged sequentially, thereby constituting the first pixel unit and the second pixel unit.2. The display panel of claim 1 , further comprising a third data line and a fourth data line claim 1 , wherein the third data line is most adjacent to the second data line claim 1 , and the first data line and the fourth data line are distant from the third ...

LIGHT EMITTING DEVICE HAVING SURFACE-MODIFIED QUANTUM DOT LUMINOPHORES

Exemplary embodiments of the present invention relate to a light emitting device including a light emitting diode and a surface-modified luminophore. The surface-modified luminophore includes a quantum dot luminophore and a fluorinated coating arranged on the quantum dot luminophore. 1. A light emitting device , comprising:a first light emitting diode; and a quantum dot (QD) luminophore; and', 'a fluorinated coating disposed on the QD luminophore., 'a surface-modified luminophore configured to absorb light emitted from the first light emitting diode and configured to emit light having a different wavelength from the absorbed light, the surface-modified luminophore comprising2. The light emitting device of claim 1 , wherein the fluorinated coating is configured to generate hydrophobic surface sites claim 1 , the fluorinated coating comprising a fluorinated inorganic agent claim 1 , a fluorinated organic agent claim 1 , or both the fluorinated inorganic agent and the fluorinated organic agent.3. The light emitting device of claim 1 , wherein the surface-modified luminophore further comprises a moisture barrier layer comprising an oxide disposed on the fluorinated coating or disposed between the fluorinated coating and the QD luminophore.4. The light emitting device of claim 3 , wherein the oxide comprises at least one of MgO claim 3 , AlO claim 3 , YO claim 3 , LaO claim 3 , GdO claim 3 , LuO claim 3 , and SiO.5. The light emitting device of claim 1 , wherein:the QD luminophore comprises a II-VI group compound semiconductor or a III-V group compound semiconductor; and{'sub': '3', 'the fluorinated coating comprises a fluorinated barrier layer formed by fluorinating the QD luminophore using a fluorine-functionalized organosilane comprising the general formula Si(OR)X, where R is an alkyl group, and X is a fluorine-functionalized organic ligand.'}6. The light emitting device of claim 1 , wherein the fluorinated coating comprises a surface fixed or cross-linked fluorine ...

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

Provided is a light-emitting device including a light-emitting cell formed on one surface of a substrate, wherein the light-emitting cell comprises a plurality of semiconductor layers and emits light of a certain wavelength; and a wavelength conversion layer formed on the other surface of the substrate and to a certain height of the side of the substrate, wherein the wavelength conversion layer converts a wavelength of light emitted from the light-emitting cell. 1. A light-emitting device comprising:a substrate on one surface of which a plurality of light-emitting cells are formed, wherein the plurality of light-emitting cells comprises a plurality of semiconductor layers and emits light of a certain wavelength;a plurality of cut portions formed on the other surface of the substrate at a certain depth; anda wavelength conversion layer formed on the other surface of the substrate and the plurality of cut portions, wherein the wavelength conversion layer converts a wavelength of light emitted from the light-emitting cell.2. The light-emitting device of claim 1 , wherein the substrate comprises a transparent substrate.3. The light-emitting device of claim 1 , wherein the cut portion is formed to overlap with a scribe line for dividing at least one light-emitting cell.4. The light-emitting device of claim 3 , wherein the wavelength conversion layer comprises at least one of a phosphor layer and a quantum dot layer.5. A light-emitting device comprising:a light-emitting cell formed on one surface of a substrate, wherein the light-emitting cell comprises a plurality of semiconductor layers and emits light of a certain wavelength; anda wavelength conversion layer formed on the other surface of the substrate and to a certain height of the side of the substrate, wherein the wavelength conversion layer converts a wavelength of light emitted from the light-emitting cell.6. The light-emitting device of claim 5 , wherein the substrate comprises a transparent substrate.7. The ...

Semiconductor light emitting apparatus

A light emitting apparatus with a combination of a plurality of LED chips and a phosphor layer is provided and can be configured to significantly reduce variations in chromaticity and luminance. The plurality of semiconductor light emitting devices (LED chips) are disposed with a gap therebetween, and the phosphor layer is formed on the upper surface thereof to bridge over the gaps between the LED chips. The phosphor layer may be uniform in thickness, but can be less in thickness over the gaps between the LED chips than on the upper surface of the LED chips. The phosphor layer can be continuously formed on the upper surface of the array of the chips with no phosphor layer present in between the chips. This configuration allows for reducing variations in luminance and chromaticity which may result from the gaps or the phosphor layer present in between the gaps.

PIXEL STRUCTURE FOR LIQUID CRYSTAL DISPLAY, ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY

There are disclosed a pixel structure for a liquid crystal display, an array substrate and the liquid crystal display, for enhancing stability of picture quality of the liquid crystal display. The pixel structure for the liquid crystal display comprises: gate lines (), a common electrode (), a thin film transistor, data lines () and a pixel electrode (), wherein the pixel electrode () includes a plurality of strip-like portions, and at least one of the strip-like portions of the pixel electrode () is placed to overlap a part of a corresponding gate line () entirely or in part. 1. A pixel structure for a liquid crystal display , comprising: gate lines disposed on two opposite sides , data lines disposed on other two opposite sides , a common electrode , a thin film transistor and a pixel electrode ,wherein the pixel electrode includes a plurality of strip-like portions, and at least one of the strip-like portions of the pixel electrode is placed to overlap a part of a corresponding gate line entirely or in part.2. The pixel structure claimed as claim 1 , wherein the strip-like portions of the pixel electrode are arranged in parallel claim 1 , and there is an interval between two of the strip-like portions of the pixel electrode that are adjacent.3. The pixel structure claimed as claim 1 , wherein a first strip-like portion of the pixel electrode is placed to overlap a first region of the gate line on one adjacent side claim 1 , and a second strip-like portion of the pixel electrode is placed to overlap a second region of the gate line on the other adjacent side.4. The pixel structure claimed as claim 3 , wherein a sum of areas of the first region and the second region of a same gate line is smaller than the area of a part of the gate line that corresponds to the pixel electrode.5. The pixel structure claimed as claim 1 , wherein a gate insulating layer and a passivation layer are provided between the gate lines and the pixel electrode.6. The pixel structure claimed ...

SYSTEM AND METHOD FOR COMBINING LASER ARRAYS FOR DIGITAL OUTPUTS

Embodiments comprise laser emitter devices that generate a collimated beam of light the intensity or amplitude of which may be varied so as to carry data signals at a high rate of efficiency, and that is less sensitive to alignment of the detector, and detector systems for detecting the same collimated beam and reading the data carried in the beam of light. 1. A system for combining the output of semiconductor light devices to generate a single light beam , comprising:a set of one or more semiconductor light devices configured to generate a plurality of light beams representing a first channel of data;a binary string containing digital data, each bit from the binary string controlling a power of each of the one or more semiconductor light devices from the set of one or more semiconductor light devices, wherein an amplitude of a light beam generated by each semiconductor light device is determined by a position of a particular bit controlling each semiconductor light device, the amplitude encoding the digital data in the light beam;a lens array positioned over the set of semiconductor light devices and configured to focus the plurality of light beams to a single focal point; anda macro lens positioned beyond the lens array and configured to collimate the plurality of light beams into the single light beam carrying the digital data for the first channel.2. The system as recited in claim 1 , wherein the set of one or more semiconductor light devices includes one or more laser arrays.3. The system as recited in claim 1 , wherein the set of one or more semiconductor light devices are light emitting diodes.4. The system as recited in claim 1 , wherein the set of one or more semiconductor light devices are resonant cavity light emitting diodes.5. The system as recited in claim 1 , wherein the set of one or more semiconductor light devices include a plurality of laser chips.6. The system as recited in claim 1 , wherein the plurality of light beams include a plurality of ...

LIGHT-EMITTING DEVICE

The present invention provides a light-emitting device which includes a plurality of LED chips mounted on a chip mount surface of a substrate provided with a wiring pattern. In the light-emitting device, the wiring pattern is provided so as to meet the following conditions (a), (b), and (c). (a) The wiring pattern divides the chip mount surface into at least three divided areas in a radial fashion from a center of the chip mount surface, and includes radial elements and circumferential elements so as to surround divided areas. (b) Of two radial elements and one circumferential element which surround each divided area as viewed from the individual divided area, one or two elements form part of a positive electrode pattern, and the remainder forms part of a negative electrode pattern. (c) There is only one radial element between adjoining ones of the divided areas. 1a plurality of LED chips mounted on a chip mount surface of a substrate provided with a wiring pattern, whereinthe wiring pattern is provided so as to meet the following conditions (a), (b), and (c):(a) the wiring pattern divides the chip mount surface into at least three divided areas in a radial fashion from a center of the chip mount surface, and includes radial elements and circumferential elements so as to surround divided areas;(b) of two radial elements and one circumferential element which surround each divided area as viewed from the individual divided area, one or two elements form part of a positive electrode pattern, and the remainder forms part of a negative electrode pattern; and(c) there is only one radial element between adjoining ones of the divided areas.. A light-emitting device, comprising: The present invention relates to light-emitting devices in which a plurality of light-emitting diode (LED) chips is mounted on a chip mount surface of a substrate provided with a wiring pattern.In light-emitting devices in which a plurality of LED chips is mounted on a chip mount surface of a ...

LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE ASSEMBLY, AND ELECTRODE-BEARING SUBSTRATE

A light-emitting device assembly includes a substrate, an optical semiconductor element mounted on the surface of the substrate, an encapsulating layer formed on the substrate surface to encapsulate the optical semiconductor element, and an electrode formed on the substrate surface to be electrically connected to the optical semiconductor element. On the substrate, only an encapsulating region and an electrode region are formed, the encapsulating region including the optical semiconductor element and being defined by the encapsulating layer, and the electrode region being defined by the electrode exposed from the encapsulating layer. 1. A light-emitting device assembly comprising:a substrate, an optical semiconductor element mounted on the surface of the substrate, an encapsulating layer formed on the substrate surface to encapsulate the optical semiconductor element, and an electrode formed on the substrate surface to be electrically connected to the optical semiconductor element, the encapsulating region including the optical semiconductor element and being defined by the encapsulating layer, and', 'the electrode region being defined by the electrode exposed from the encapsulating layer., 'wherein on the substrate, only an encapsulating region and an electrode region are formed,'}2. The light-emitting device according to claim 1 , wherein the encapsulating region and/or the electrode region is formed continuously in one direction.3. The light-emitting device according to claim 1 , further comprising a wire for connecting the optical semiconductor element to the electrode.4. The light-emitting device according to claim 3 , wherein the wire is encapsulated with the encapsulating layer.5. A light-emitting device assembly comprising a plurality of light-emitting devices claim 3 , the plurality of light-emitting devices each comprisinga substrate,an optical semiconductor element mounted on the surface of the substrate,an encapsulating layer formed on the substrate ...

Lighting Device

A lighting device using an electroluminescent material, in which color mixing and dimming can be performed by a simple method, is provided. A lighting device including a first light-emitting element and a second light-emitting element which emits light having a wavelength longer than that of light emitted from the first light-emitting element and starts to emit light at a lower voltage than the first light-emitting element, is provided. The first light-emitting element and the second light-emitting element are connected in parallel, whereby a mixed color of emission colors of the first light-emitting element and the second light-emitting element is controlled by a voltage applied to the first light-emitting element and the second light-emitting element. 1. (canceled)2. A lighting device comprising:a first light-emitting element emitting first light; anda second light-emitting element electrically connected to the first light-emitting element, the second light-emitting element emitting second light,wherein the second light has a longer wavelength than the first light,wherein the second light-emitting element starts to emit the second light at a lower voltage than the first light-emitting element,wherein a mixed color of a color of the first light and a color of the second light is controlled by a voltage applied to the first light-emitting element and the second light-emitting element, andwherein the first light-emitting element and the second light-emitting element are arranged on the same surface.3. The lighting device according to claim 2 , further comprising a power source electrically connected to the first light-emitting element and the second light-emitting element.4. The lighting device according to claim 2 ,wherein the second light-emitting element emits the second light with higher luminance than the first light emitted from the first light-emitting element.5. The lighting device according to claim 2 ,wherein the color of the first light and the color of ...

METHOD FOR EMBEDDING A LED NETWORK

The invention relates to a method for embedding a non-embedded or bare LED network. To this end, the method of embedding a non-embedded LED network comprises the steps of: •(a) providing said non-embedded LED network associated with a continuous flexible support; •(b) applying in a continuous manner a flexible insulation layer on a liquid basis onto said non-embedded LED network associated with said continuous flexible support. 1. Method for embedding a non-embedded LED network comprising the steps of:(a) providing said non-embedded LED network associated with a continuous flexible support;(b) applying in a continuous manner a flexible insulation layer on a liquid basis onto said non-embedded LED network associated with said continuous flexible support.2. Method according to claim 1 , comprises the step of winding claim 1 , folding claim 1 , cutting and/or stacking the product that is at least obtained with the steps (a) and (b).3. Method according to claim 1 , wherein said non-embedded LED network comprises a network of conductors which provides a set of bare LEDs with energy claim 1 , and which connects said set of bare LEDs in a pattern with each other.4. Method according to claim 1 , wherein successively:(a1) a continuous flexible support is provided;(b1) a first flexible insulation layer on a liquid basis is applied in a continuous manner onto said continuous flexible support;(c1) a non-embedded LED network is positioned onto said first flexible insulation layer;(d1) a second flexible insulation layer on a liquid basis is applied in a continuous manner onto said non-embedded LED network and said first insulation layer ; and(e1) optionally, said winding, folding, cutting and/or stacking is carried out.5. Method according to claim 4 , wherein the method between applying the first insulation layer on a liquid basis and placing the non-embedded LED network onto the first insulation layer comprising the step of:(f1) applying an adhesive layer onto said first ...

COOLING OF SEMICONDUCTOR DEVICES

A semiconductor device such as an LED illumination device includes a substrate sheet () and a plurality of LEDs () that are supported on the front of the substrate sheet. A plurality of apertures () extend through the substrate sheet () and thermally conductive elements in the form of conduits or tubes () extend through the apertures, while thermally conductive elements in the form of pads () extend between the LEDs and the tubes (). Each tube () defines an open passage that extends through the apertures () between the front and the back of the substrate sheet (), without obstruction. Heat generated in the LEDs is conducted to the tubes (), from where it is dissipated through convection. 1. A semiconductor device comprising:{'b': 2', '9, 'a substrate sheet () with a front and a back and defining a plurality of apertures (), each aperture extending between the front and the back;'}{'b': '4', 'a plurality of semiconductors () supported on the front of the substrate sheet; and'}{'b': 1', '10, 'thermally conductive elements (,) that are in good thermal communication with the semiconductors and with the peripheries of the apertures;'}{'b': '1', 'characterised in that at least some of said thermally conductive elements are thermally conductive conduits () that protrude beyond the front of the substrate sheet and define open passages that extend through the apertures between the front and the back of the substrate sheet, without obstruction.'}24. An illumination device as claimed in claim 1 , wherein at least some of the semiconductors are LEDs ().32. An illumination device as claimed in claim 1 , characterised in that the substrate sheet is an ordinary printed circuit board ().41041. An illumination device as claimed in claim 1 , characterised in that the thermally conductive elements include conductive sheet material () extending between the semiconductors () and the conduits ().5102. An illumination device as claimed in claim 4 , characterised in that the conductive ...

ELECTRONIC DEVICES WITH YIELDING SUBSTRATES

In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts. 162-. (canceled)63. An electronic device comprising:a light-emitting diode (LED) having first and second spaced-apart contacts; anda flexible substrate having first and second conductive traces on a first surface thereof, the first and second conductive traces being separated on the substrate by a gap therebetween,wherein the first and second contacts are adhered to and in electrical contact with, respectively, the first and second conductive traces with an adhesive material without electrically bridging the traces or the contacts.64. The electronic device of claim 63 , wherein the substrate comprises a local flexing or a local deformation for maintaining electrical contact between the contacts and traces during operation of the LED.65. The electronic device of claim 63 , wherein the first and second spaced-apart contacts are disposed on a first surface of the LED claim 63 , and further comprising a reflective material over at least a portion of the first surface of the LED.66. The electronic device of claim 63 , wherein the first and second spaced-apart contacts are substantially coplanar.67. The electronic device of claim 63 , wherein the first and second spaced-apart contacts are non-coplanar and the first and second contacts are adhered to and in electrical contact with claim 63 , respectively claim 63 , the first and second conductive traces notwithstanding the non-coplanarity of the first and second contacts.68. The electronic device of claim 63 , wherein the LED comprises a semiconductor material comprising at least one of GaN claim 63 , AlN claim 63 , InN claim 63 , or an alloy or mixture thereof.69. The electronic device of claim 63 , wherein the adhesive material comprises a pressure-activated ...

LIGHT EMITTING DISPLAY HAVING LIGHT SENSORS

A light emitting display includes a light emitting diode formed on a first substrate, a thin film transistor formed on a second substrate, and a light sensing unit located at a lateral side of the thin film transistor. The first substrate and the second substrate are arranged face-to-face and are spaced from each other. And the thin film transistor and the light emitting diode are formed between the first and second substrates. The light sensing unit is located at a light path of the light emitting diode to detect an intensity of light from the light emitting diode, and the thin film transistor is offset from the light path of the light emitting diode and is electrically connected with the light sensing unit. 1. A light emitting display , comprising:a light emitting diode formed on a first substrate;a thin film transistor formed on a second substrate, the first substrate and the second substrate being arranged face-to-face and spaced from each other, and the thin film transistor and the light emitting diode being formed between the first and second substrates; anda light sensing unit located at a lateral side of the thin film transistor and electrically connecting with the thin film transistor, the light sensing unit being located at a light path of the light emitting diode to sense intensity of the light from the light emitting diode, and the thin film transistor being deviated from the light path of the light emitting diode.2. The light emitting display of claim 1 , wherein the first substrate and the second substrate are made of sapphire claim 1 , silicon claim 1 , silicon on glass claim 1 , glass claim 1 , GaN claim 1 , ZnO claim 1 , plastic or a flexible material.3. The light emitting display of claim 2 , wherein the first substrate is made of sapphire or silicon on glass claim 2 , and the second substrate is made of glass.4. The light emitting display of claim 1 , wherein a first buffer layer is formed on the first substrate and the light emitting diode is ...

PACKAGE FOR LIGHT EMITTING APPARATUS AND LIGHT EMITTING APPARATUS INCLUDING THE SAME

The present invention provides a package for light emitting apparatus has a long-length direction and a short-length direction perpendicular to the long-length direction as viewed in plan view, and includes first, second and third leadframes, and a resin portion. The first and second leadframes are arranged on the both sides in the long-length direction. The third leadframe is arranged between the first and second leadframes. The resin portion is integrally formed with the first, second and third leadframes. The first and second leadframes include main portions, and first and second extension portions that extend from the main portions toward the second and first leadframes, respectively, and have a width smaller than the main portions.

LED LIGHTING ASSEMBLY AND AN ILLUMINATING APPARATUS HAVING THE LED LIGHTING ASSEMBLY

An LED lighting assembly may include: a substrate, a metal layer applied on the substrate, and an LED chip provided on the metal layer, wherein the metal layer comprises a first region for heat dissipation and two second regions for electric conduction, and the first region and the two second regions are electrically insulated from each other, and wherein the LED chip is provided in the first region and is respectively electrically connected with the two second regions via wires. 1. An LED lighting assembly , comprising:a substrate,a metal layer applied on the substrate, andan LED chip provided on the metal layer, wherein the metal layer comprises a first region for heat dissipation and two second regions for electric conduction, and the first region and the two second regions are electrically insulated from each other, and wherein the LED chip is provided in the first region and is respectively electrically connected with the two second regions via wires.2. The LED lighting assembly according to claim 1 , wherein the substrate is a FR4 substrate.3. The LED lighting assembly according to claim 1 , wherein at least one thermal via is provided claim 1 , and the thermal via penetrates the substrate in a portion of the first region where the LED chip is not provided.4. The LED lighting assembly according to claim 3 , wherein the first region comprises two first subregions and a second subregion connecting the two first subregions therebetween claim 3 , the thermal via is provided in the first subregion claim 3 , and the LED chip is provided in the second subregion.5. The LED lighting assembly according to claim 4 , wherein the two first subregions are symmetrical to each other.6. The LED lighting assembly according to claim 4 , wherein the second subregion has a size at least the same as that of the LED chip.7. The LED lighting assembly according to claim 4 , wherein the two second regions are arranged on two sides claim 4 , which are not connected with the first ...

Display device, display module, and electronic device

A display device with high display quality is provided. A display device with low power consumption is provided. In the display device, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package are included in a pixel. The light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light-emitting diode includes a first electrode and a second electrode. The second light-emitting diode includes a third electrode and a fourth electrode. One of a source and a drain of the first transistor is electrically connected to the first electrode through the second conductive layer. One of a source and a drain of the second transistor is electrically connected to the third electrode through the third conductive layer. The first conductive layer is electrically connected to each of the second electrode and the fourth electrode through the fourth conductive layer. A constant potential is supplied to the first conductive layer.

MICRO LIGHT-EMITTING ASSEMBLY, MICRO LIGHT-EMITTING DEVICE MANUFACTURED FROM THE SAME AND METHOD FOR MASS TRANSFER OF MICRO LIGHT-EMITTING DEVICES

A micro light-emitting assembly includes a base and at least one micro light-emitting device. The base contains a transitional substrate, a supporting layer disposed on the transitional substrate, and at least one supporting pillar having a bottom portion connected to the supporting layer and a top portion opposite to the bottom portion. The micro light-emitting device is supportively connected to the top portion of the supporting pillar. The micro light-emitting device has a recess-forming surface and a recess extending inwardly from the recess-forming surface to receive the top portion of the supporting pillar. A micro light-emitting device manufactured from the micro light-emitting assembly, and a method for mass transfer of micro light-emitting devices are also disclosed. 1. A micro light-emitting assembly comprising:a base including a transitional substrate, a supporting layer disposed on said transitional substrate, and at least one supporting pillar having a bottom portion connected to said supporting layer and a top portion opposite to said bottom portion; andat least one micro light-emitting device supportively connected to said top portion of said at least one supporting pillar, said at least one micro light-emitting device having a recess-forming surface and a recess extending inwardly from said recess-forming surface to receive said top portion of said at least one supporting pillar.2. The micro light-emitting assembly of claim 1 , wherein said recess has a bottom surface and a surrounding surface connected to said bottom surface claim 1 , said top portion of said at least one supporting pillar abutting against said bottom surface and said surrounding surface.3. The micro light-emitting assembly of claim 1 , wherein said recess has a depth ranging from 1000 Å to 2500 Å.4. The micro light-emitting assembly of claim 1 , wherein said recess has a depth ranging from 1800 Å to 2000 Å.5. The micro light-emitting assembly of claim 1 , wherein said at least one ...

LIGHT-EMITTING DEVICE AND DISPLAY DEVICE HAVING SAME

A light emitting device may include: an emission area; an insulating pattern in the emission area, the insulating pattern including at least one recess and a protrusion around the recess; a first electrode on the insulating pattern and overlapping a first area of the recess and the protrusion in a periphery of the first area; a second electrode on the insulating pattern and spaced from the first electrode in a first direction, the second electrode overlapping a second area of the recess and the protrusion in a periphery of the second area; and a light emitting diode in the recess and electrically connected between the first electrode and the second electrode. 1. A light emitting device comprising:an emission area;an insulating pattern in the emission area, the insulating pattern comprising at least one recess and a protrusion around the recess;a first electrode on the insulating pattern and overlapping a first area of the recess and the protrusion in a periphery of the first area;a second electrode on the insulating pattern and spaced from the first electrode in a first direction, the second electrode overlapping a second area of the recess and the protrusion in a periphery of the second area; anda light emitting diode in the recess and electrically connected between the first electrode and the second electrode.2. The light emitting device according to claim 1 , wherein the recess comprises claim 1 , in a perimeter area thereof adjacent to the protrusion claim 1 , an inclined surface having an inclination within an angular range.3. The light emitting device according to claim 2 , wherein each of the first electrode and the second electrode comprises a bent portion having a bent shape on each of an upper end and a lower end of the inclined surface.4. The light emitting device according to claim 1 , wherein the recess has a circular shape claim 1 , an elliptical shape claim 1 , a polygonal shape claim 1 , or a combination thereof claim 1 , in a plan view.5. The light ...

LED DISPLAY SCREEN

An LED display screen, comprising: an LED array, consisting of multiple LED light-emitting units and used for emitting a light; an optical diffusion film, provided at a light exit side of the LED array; a matrix shading frame, comprising multiple hollow shading gratings, the hollow shading gratings corresponding one-to-one to the LED light-emitting units; and a substrate, used for supporting the LED array and the matrix shading frame, where the light emitted by the LED light-emitting units, after running through the hollow shading gratings, is diffused to a viewer side via the optical diffusion film, and the LED light-emitting units emit the light towards the hollow shading gratings. The LED display screen prevents external ambient lights from being shone to optical surfaces of the LED light-emitting units and being reflected thereby, thus increasing the contrast of the LED display screen. 1. An LED display screen , comprising:an LED array comprising a plurality of LED light-emitting units and configured to emit light;an optical diffusion film provided on a light-emitting side of the LED array;a matrix light block frame comprising a plurality of hollow light block grids, the plurality of hollow light block grids being arranged in one-to-one correspondence with the plurality of LED light-emitting units; anda substrate configured to support the LED array and the matrix light block frame,wherein the light emitted by each of the plurality of LED light-emitting units is transmitted through one of the plurality of hollow light block grids corresponding to the LED light-emitting unit and then is diffused to a viewer side through the optical diffusion film, and the plurality of LED light-emitting units emits light towards the plurality of hollow light block grids.2. The LED display screen according to claim 1 , wherein a surface of each of the plurality of LED light-emitting units facing towards the viewer side is covered by a light-absorbing material.3. The LED display ...

DISPLAY DEVICE

According to one embodiment, a display device includes a substrate, a pixel electrode disposed on the substrate, a light emitting element mounted on the pixel electrode, a drive transistor configured to control a current supplied to the light emitting element through the pixel electrode, and a conductive layer formed between the pixel electrode and the drive transistor so as to at least partially overlap with the pixel electrode in a planar view. The conductive layer does not overlap with a region of the pixel electrode on which the light emitting element is mounted in a planar view. 1. A display device comprising:a substrate;a pixel electrode disposed on the substrate;a light emitting element mounted on the pixel electrode;a drive transistor configured to control a current supplied to the light emitting element through the pixel electrode; anda conductive layer formed between the pixel electrode and the drive transistor so as to at least partially overlap with the pixel electrode in a planar view, whereinthe conductive layer does not overlap with a region of the pixel electrode on which the light emitting element is mounted in a planar view.2. The display device according to claim 1 , further comprising a plurality of pixels each including the pixel electrode claim 1 , whereinthe conductive layer is formed across the plurality of pixels, and the conductive layer has an opening formed at a position overlapping with a region of the pixel electrode on which the light emitting element is mounted in the planar view.3. The display device according to claim 1 , whereinan end portion of the conductive layer does not overlap with an end portion of a region of the pixel electrode on which the light emitting element is mounted in a planar view.4. The display device according to claim 1 , further comprising a plurality of pixels each including the pixel electrode claim 1 , the light emitting element claim 1 , and the drive transistor claim 1 , whereinat least one of the pixel ...

ILLUMINATION SOURCE AND DISPLAY APPARATUS HAVING THE SAME

Disclosed is a color conversion layer including at least one light emitting material including at least one composite particle surrounded partially or totally by at least one surrounding medium; wherein the light emitting material is configured to emit light in response to an excitation and the at least one composite particle includes a plurality of nanoparticles encapsulated in an inorganic material; and wherein the inorganic material has a difference of refractive index compared to the at least one surrounding medium superior or equal to 0.02 at 450 nm. Also disclosed is an illumination source and a display apparatus. 147171. A color conversion layer () comprising at least one light emitting material () comprising at least one composite particle () surrounded partially or totally by at least one surrounding medium ();{'b': 7', '1', '3', '2', '2', '71, 'wherein said light emitting material () is configured to emit a secondary light in response to an excitation and the at least one composite particle () comprises a plurality of nanoparticles () encapsulated in an inorganic material (); and said inorganic material () has a difference of refractive index compared to the at least one surrounding medium () superior or equal to 0.02 at 450 nm.'}2422. The color conversion layer () according to claim 1 , wherein the inorganic material () limits or prevents the diffusion of outer molecular species or fluids (liquid or gas) into said inorganic material ().34171. The color conversion layer () according to claim 1 , wherein the at least one composite particle () in the at least one surrounding medium () is configured to scatter light.4431. The color conversion layer () according to claim 1 , wherein the nanoparticles () comprised in the at least one composite particle () are semiconductor nanocrystals comprising a material of formula MNEA claim 1 , wherein: M is selected from the group consisting of Zn claim 1 , Cd claim 1 , Hg claim 1 , Cu claim 1 , Ag claim 1 , Au claim 1 , ...

PIXEL ARRAY AND DRIVING METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE

A pixel array is provided and includes a plurality of pixel groups. Each of the pixel groups includes three sub-pixels disposed to encircle a center point, and each center point is encircled by three sub-pixels in a pixel group in the present row and the present column, one sub-pixel in a pixel group in the present row and the next column, one sub-pixel in a pixel group in the previous row and the previous column and one sub-pixel in a pixel group in the previous row and the next column about it. A driving method for the pixel array, a display panel and a display device including the pixel array are provided. 1. A pixel array , comprising a plurality of pixel groups , wherein , each of the pixel groups includes three sub-pixels disposed to encircle a center point , and each center point is encircled , about it , by three sub-pixels in a pixel group in a present row and a present column , one sub-pixel in a pixel group in the present row and a next column , one sub-pixel in a pixel group in a previous row and a previous column and one sub-pixel in a pixel group in the previous row and the next column.2. The pixel array claimed as claim 1 , wherein claim 1 , the sub-pixels in each of the pixel groups include a red sub-pixel claim 1 , a green sub-pixel and a blue sub-pixel claim 1 , and the red sub-pixel is disposed above the center point claim 1 , the green sub-pixel is disposed on a lower left side or a lower right side of the center point claim 1 , and the blue sub-pixel is disposed on the lower right side or the lower left side of the center point; orthe green sub-pixel is disposed above the center point, the red sub-pixel is disposed on the lower left side or the lower right side of the center point, and the blue sub-pixel is disposed on the lower right side or the lower left side of the center point; orthe blue sub-pixel is disposed above the center point, the red sub-pixel is disposed on the lower left side or the lower right side of the center point, and the ...

LIGHT EMITTING DIODE CHIP

An LED chip for use in an LED chip array forming a continuous array of LEDs. The LED chip comprises an array of LEDs on a substrate. LEDs in a row of the array are longitudinally offset from corresponding LEDs in another row. Adjacent LEDs in each row of the array are separated by a longitudinal pitch. At least part of an end face of the substrate is angled with respect to a transverse axis of the LED chip such that the LED chip is positionable adjacent another LED chip to maintain the longitudinal pitch between adjacent LEDs on different chips. 1. A light emitting diode (LED) chip comprising:a substrate having at least part of a first end face extending at a non-orthogonal angle relative to a longitudinal direction of the substrate; andan array of LEDs on the substrate arranged in a plurality of rows along the longitudinal direction, adjacent LEDs in a row of the array longitudinally offset by a longitudinal pitch that corresponds to multiples of a diameter of an LED in the row, LEDs in the row longitudinally offset from LEDs in an adjacent row of LEDs.2. The LED chip of claim 1 , wherein at least part of a second end face at an opposite side of the first end face of the substrate extends parallel to the at least part of the end face.3. The LED chip of claim 1 , wherein the array of LEDs is arranged into a quasi-1D array.4. The LED chip of claim 1 , wherein adjacent LEDs in all rows of the array are offset by the same longitudinal pitch.5. The LED chip of claim 1 , wherein the at least part of the end face of the substrate is substantially parallel to a line taken between corresponding LEDs in different rows of the array.6. The LED chip of claim 1 , wherein the substrate forms a parallelogram.7. The LED chip of claim 1 , wherein each LED is at least 5 μm from an edge of the substrate.8. The LED chip of claim 1 , wherein the LED chip is placed adjacent to another LED chip such that an LED on the LED chip and another LED on the other LED chip are separated by the ...

DISPLAY APPARATUS WITH DETECTING DEVICE

A display apparatus with a detecting device includes a substrate, a plurality of pixels provided to the substrate, an inorganic light emitting element provided to each of the pixels, a plurality of detection electrodes arranged in a first direction parallel to the substrate, and a plurality of drive electrodes arranged in a second direction intersecting the first direction and provided intersecting the detection electrodes in planar view seen from a direction perpendicular to the substrate. The detection electrodes each includes a plurality of first linear parts, a plurality of second linear parts extending in a direction intersecting the first linear parts, and a bent part that couples the first linear part and the second linear part, the first linear parts and the second linear parts are metal thin wires, and the drive electrodes are translucent electric conductors. 1. A display apparatus with a detecting device comprising:a substrate;a plurality of pixels provided to the substrate;an inorganic light emitting element provided to each of the pixels;a plurality of detection electrodes arranged in a first direction parallel to the substrate; anda plurality of drive electrodes arranged in a second direction intersecting the first direction and provided intersecting the detection electrodes in planar view seen from a direction perpendicular to the substrate, wherein a plurality of first linear parts;', 'a plurality of second linear parts extending in a direction intersecting the first linear parts; and', 'a bent part that couples the first linear part and the second linear part,, 'the detection electrodes each comprisesthe first linear parts and the second linear parts are metal thin wires, andthe drive electrodes are translucent electric conductors.2. The display apparatus with the detecting device according to claim 1 , wherein a plurality of the inorganic light emitting elements are each disposed between the detection electrodes disposed side by side in the first ...

ILLUMINATION METHOD AND LIGHT-EMITTING DEVICE

To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements. 188-. (canceled)91: The light-emitting device according to claim 89 , wherein if a maximum saturation difference value is denoted by ΔCand a minimum saturation difference value is denoted by ΔC claim 89 , then a difference ΔC−ΔCbetween the maximum saturation difference value and the minimum saturation difference value satisfies{'br': None, 'i': C', '−ΔC, 'sub': max', 'min, '3.0≦Δ≦19.6.'}93: The light-emitting device according to claim 89 , wherein a luminous efficacy of radiation K (lm/W) in a wavelength range from 380 nm to 780 nm as derived from the spectral power distribution φ(λ) of light emitted from the light-emitting device in the radiant direction satisfies{'br': None, 'i': 'K', '180 (lm/W)≦(lm/W)≦320 (lm/W).'}94: The light-emitting device according to claim 89 , wherein the correlated color temperature T(K) satisfies{'br': None, 'i': 'T', 'sub': 'SSL', '2550 (K)≦(K)≦7000 (K).'}95: The light-emitting device according to claim 89 , wherein illuminance at which the light emitted from the light-emitting device in the radiant direction illuminates objects is 150 lx to 5000 lx.96: The light-emitting device according to claim 89 , wherein the light-emitting device comprises a ...

LIGHT-EMITTING DEVICE, METHOD FOR DESIGNING LIGHT-EMITTING DEVICE, METHOD FOR DRIVING LIGHT-EMITTING DEVICE, ILLUMINATION METHOD, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE

An object of the present invention is to provide a light-emitting device that can implement a natural, vivid, highly visible and comfortable appearance of colors and appearance of objects as if the objects are seen outdoors, and to provide a light-emitting device that can change the appearance of colors of the illuminated objects so as to satisfy the requirements for various illuminations, and a method for designing thereof. Another object of the present invention is to improve the appearance of colors of a light-emitting device which currently exists or is in use, and which includes a semiconductor light-emitting device of which appearance of colors is not very good. Moreover, another object of the present invention is to provide a method for driving the light-emitting device, an illumination method by the device, and a method for manufacturing the light-emitting device. 116-. (canceled)18: The light-emitting device according to claim 17 , including the light emitting areas that allow φ(λ) to further satisfy the following Condition 3″ by changing a luminous flux amount and/or a radiant flux amount emitted from the light emitting areas: {'sub': max', 'min', 'max', 'min, 'claim-text': {'br': None, 'sub': max', 'min, '2.8≦ΔC−ΔC≦19.6.'}, 'if a maximum saturation difference value is denoted by ΔCand a minimum saturation difference value is denoted by ΔC, then a difference ΔC−ΔCbetween the maximum saturation difference value and the minimum saturation difference value satisfies'}, 'Condition 3″19: The light-emitting device according to claim 17 , including the light emitting areas that allow φ(?) to further satisfy the following Condition 4 by changing a luminous flux amount and/or a radiant flux amount emitted from the light emitting areas: [{'sub': 'nSSL', 'if hue angles in CIE 1976 L*a*b* color space of the 15 Munsell renotation color samples when mathematically assuming illumination by the light emitted in the radiant direction are denoted by θ(degrees) (where n is a ...

Wet alignment method for micro-semiconductor chip and display transfer structure

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

DISPLAY DEVICE

A display device includes a substrate, a plurality of pixels provided to the substrate, and a plurality of first inorganic light emitting elements and a plurality of second inorganic light emitting elements provided to the pixels. The first inorganic light emitting elements are configured to output first light in a visible light region, and the second inorganic light emitting elements are configured to output second light in an infrared light region. 1. A display device comprising:a substrate;a plurality of pixels provided to the substrate; anda plurality of first inorganic light emitting elements and a plurality of second inorganic light emitting elements provided to the pixels, whereinthe first inorganic light emitting elements are configured to output first light in a visible light region, andthe second inorganic light emitting elements are configured to output second light in an infrared light region.2. The display device according to claim 1 , whereinthe first inorganic light emitting elements and the second inorganic light emitting elements each comprise an anode terminal and a cathode terminal,the anode terminal of a second inorganic light emitting element for a light source is supplied with a first potential, the second inorganic light emitting element for the light source being configured to output the second light out of the second inorganic light emitting elements, andthe cathode terminal of the second inorganic light emitting element for the light source is supplied with a second potential lower than the first potential.3. The display device according to claim 2 , whereinthe anode terminal of a second inorganic light emitting element for detection is supplied with the second potential, the second inorganic light emitting element for detection being configured to output a signal based on the second light incident on the second inorganic light emitting element for detection out of the second inorganic light emitting elements, andthe cathode terminal of the ...

DISPLAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME

A display device includes: a window including a front area and a side area bent from the front area, the side area having a first curvature; and a display panel including a first display area facing the front area of the window and a second display area facing the side area of the window, the first display area including first, second, and third light emission areas, the second display area including the first, second, and third light emission areas. The second display area comprises an edge display area and a corner display area disposed at an end of the edge display area, and the first light emission area, the second light emission area, and the third light emission area of the corner display area are disposed in a stair shape along a curved edge of the corner display area. 1. A display device comprising:a window comprising a front area and a side area bent from the front area, the side area having a first curvature; anda display panel comprising a first display area facing the front area of the window and a second display area facing the side area of the window, the first display area comprising a first light emission area, a second light emission area, and a third light emission area, the second display area comprising the first light emission area, the second light emission area, and the third light emission area,wherein the second display area comprises an edge display area and a corner display area disposed at an end of the edge display area, andthe first light emission area, the second light emission area, and the third light emission area of the corner display area are disposed in a stair shape along a curved edge of the corner display area.2. The display device of claim 1 , wherein:the first light emission area of the second display area has a surface area greater than that of the first light emission area of the first display area,the second light emission area of the second display area has a surface area greater than that of the second light emission ...

METHOD FOR MANUFACTURING INORGANIC LIGHT EMITTER

A method for manufacturing an inorganic light emitter, include arranging an inorganic light emitting element on one surface of a substrate; separating the inorganic light emitting element from the substrate while forming an oxide layer on a first surface of the inorganic light emitting element by emitting laser light to the first surface under an atmosphere having an oxygen concentration higher than an oxygen concentration of air, the first surface contacting the one surface of the substrate; and stacking the inorganic light emitting element separated at the separating on an array substrate to manufacture the inorganic light emitter. 1. A method for manufacturing an inorganic light emitter , the method comprising:arranging an inorganic light emitting element on one surface of a substrate;separating the inorganic light emitting element from the substrate while forming an oxide layer on a first surface of the inorganic light emitting element by emitting laser light to the first surface under an atmosphere having an oxygen concentration higher than an oxygen concentration of air, the first surface contacting the one surface of the substrate; andstacking the inorganic light emitting element separated at the separating on an array substrate to manufacture the inorganic light emitter.2. The method for manufacturing the inorganic light emitter according to claim 1 , wherein the oxygen concentration is set to be in a range of 22% to 30% at the separating.3. The method for manufacturing the inorganic light emitter according to claim 1 , whereinthe arranging includes forming the inorganic light emitting element above a formation substrate, andthe separating includes separating the inorganic light emitting element from the formation substrate by emitting the laser light to the inorganic light emitting element above the formation substrate.4. The method for manufacturing the inorganic light emitter according to claim 3 , wherein the separating includes transferring the ...

DISPLAY DEVICE

A display device includes a substrate, a plurality of first pixels and a plurality of second pixels provided to the substrate, a plurality of inorganic light emitting elements provided to the respective first pixels and the respective second pixels, a plurality of signal lines configured to supply a signal to the first pixels and the second pixels, and a plurality of power supply lines configured to supply a power supply potential to the first pixels and the second pixels. At least one or more of the signal lines are provided in a layer different from a layer of the power supply lines in the first pixels, and the signal lines and the power supply lines are provided in the same layer in the second pixels. 1. A display device comprising:a substrate;a plurality of first pixels and a plurality of second pixels provided to the substrate;a plurality of inorganic light emitting elements provided to the respective first pixels and the respective second pixels;a plurality of signal lines configured to supply a signal to the first pixels and the second pixels; anda plurality of power supply lines configured to supply a power supply potential to the first pixels and the second pixels, whereinat least one or more of the signal lines are provided in a layer different from a layer of the power supply lines in the first pixels, andthe signal lines and the power supply lines are provided in the same layer in the second pixels.2. The display device according to claim 1 , whereinthe signal line is provided overlapping the power supply line in planar view seen from a direction perpendicular to the substrate in the first pixel, andthe signal line and the power supply line are provided side by side in the planar view in the second pixel.3. The display device according to claim 1 , wherein the thickness of the power supply line in the first pixel is thicker than the thickness of the power supply line in the second pixel.4. The display device according to claim 2 , further comprising a ...

DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DEVICE

Discussed is a display device using a semiconductor light emitting device. In a display device including a plurality of semiconductor light emitting devices, each of the plurality of semiconductor light emitting devices includes a first conductive semiconductor layer, a second conductive semiconductor layer overlapped with the first conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode deposited on the first conductive semiconductor layer, and a second electrode deposited on the second conductive semiconductor layer, wherein the first electrode is extended toward an adjoining semiconductor light emitting device to be electrically connected to the adjoining semiconductor light emitting device. 1. A display device comprising a plurality of semiconductor light emitting devices , wherein each of the plurality of semiconductor light emitting devices comprises:an n-type semiconductor layer;a p-type semiconductor layer overlapped with the n-type semiconductor layer;an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer;an n-type electrode deposited on the n-type semiconductor layer; anda p-type electrode deposited on the p-type semiconductor layer,wherein the n-type electrode is formed as an electrode line extending toward an adjoining semiconductor light emitting device to be electrically connected to the adjoining semiconductor light emitting device, andwherein the electrode line is overlapped with one surface of an n-type semiconductor layer of the adjoining semiconductor light emitting device.2. The display device of claim 1 , wherein the plurality of semiconductor light emitting devices further comprises an insulating layer formed to cover the n-type electrode.3. The display device of claim 2 , wherein the insulating layer comprises a black or white insulator.4. The display device of claim 1 , wherein the ...

DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE

Embodiments of the present invention disclose a display substrate and a method of manufacturing the same, and a display device comprising the display substrate. The display substrate comprises: a substrate; a black matrix layer and a color filter layer located on the substrate; and at least one main spacer and at least one secondary spacer located on the black matrix layer or the color filter layer and both having direct projections on the substrate within a region where the black matrix layer is located. A sum of thicknesses of portions of the black matrix layer and the color filter layer corresponding to each secondary spacer is smaller than that of portions of the black matrix layer and the color filter layer corresponding to each main spacer, so that a distance from a top end of the secondary spacer to the substrate is smaller than a distance from a top end of the main spacer to the substrate. As a result, a difference between the distance from the top end of the main spacer to the substrate and the distance from the top end of the secondary spacer to the substrate can be varied by adjusting a difference between the sum of thicknesses of the black matrix layer and the color filter layer directly below each main spacer and the sum of thicknesses of the black matrix layer and the color filter layer directly below each secondary spacer, thereby enabling the main spacer and the secondary spacer to provide a good effect of buffering an external force. 1. A display substrate , comprising:a substrate;a black matrix layer and a color filter layer located on the substrate; andat least one main spacer and at least one secondary spacer located on the black matrix layer or the color filter layer and both having direct projections on the substrate within a region where the black matrix layer is located,wherein, a sum of thicknesses of portions of the black matrix layer and the color filter layer corresponding to each secondary spacer is smaller than that of portions of the ...

Light emitting diode (led) components including contact expansion frame and methods of fabricating same

A Light Emitting Diode (LED) component includes an LED die and a contact expansion frame having an expanded anode contact and/or an expanded cathode contact. A patterned solder mask is provided on the contact expansion frame that exposes a portion of the outer face of the expanded anode contact and/or a portion of the outer face of the expanded cathode contact. A solder layer is provided on the portion of the outer face of the expanded anode contact and on the portion of the outer face of the expanded cathode contact. Multiple die components and related fabrication methods are also described.

LAMINATED PRINTED COLOR CONVERSION PHOSPHOR SHEETS

Embodiments are related generally to electronic displays and, more particularly, to emissive displays made with transparent sheets having phosphor dots on the surface for the purpose of color conversion. 1. An emissive display using printed phosphor color conversion sheets , the display comprising:a backplane comprising a top surface with a first number of light emitting diode (LED) devices aligned in an array; and,a first transparent substrate attached to the top surface of the backplane, wherein the first transparent substrate includes a top surface having a second number of printed phosphor dots, and wherein the second number of printed phosphor dots overly a subset of the first number of the LED devices.2. The display of claim 1 , wherein:the first number of LED devices are each configured to emit light in a given spectrum; andthe second number of printed phosphor dots are each configured to emit light in a visible spectrum.3. The display of claim 1 , wherein:the first number of LED devices are each configured to emit light in a visible spectrum with a first color;the second number of printed phosphor dots are each configured to emit light in the visible spectrum with a second color different from the first color; andthe first number is greater than the second number.4. The display of claim 1 , wherein:the first number of LED devices are each configured to emit light in a visible spectrum with a first color; anda first subset of the second number of printed phosphor dots are each configured to emit light in the visible spectrum with a second color, and a second subset of the second number of printed phosphor dots are each configured to emit light in the visible spectrum with a third color, and wherein the first color is different than the second color, and the third color is different from both the first color and the second color.5. The display of claim 4 , wherein the first transparent substrate is organized into a plurality of pixels claim 4 , each pixel ...