LIGHT EMITTING DIODE PACKAGE STRUCTURE

A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The optical element is disposed on the substrate and forms a sealed space with the carrier substrate, and the LED chip is disposed in the sealed space. The thermal-conductive transparent liquid fills up the sealed space. 1. A light emitting diode (LED) package structure , comprising:a carrier substrate having a plurality of channels or a plurality of vias;at least one LED chip, disposed on the carrier substrate and having an active layer;an optical element, disposed on the carrier substrate and forming a sealed space with the carrier substrate, wherein the at least one LED chip is disposed in the sealed space; anda thermal-conductive transparent liquid, filling up the sealed space.2. The LED package structure of claim 1 , further comprising a sealing member disposed outside the sealed space claim 1 , wherein the sealing member connects the carrier substrate and an outer periphery of the optical element.3. The LED package structure of claim 2 , further comprising a fixed component disposed on the carrier substrate claim 2 , wherein the fixed component connects the sealing member and the carrier substrate.4. The LED package structure of claim 2 , further comprising a connection layer disposed between the sealing member and the carrier substrate claim 2 , and a material of the connection layer comprises a metal or an alloy.5. The LED package structure of claim 1 , wherein the thermal-conductive transparent liquid comprises at least one antifreeze material.6. The LED package structure of claim 1 , wherein the thermal-conductive transparent liquid contains a plurality of suspended particles.7. The LED package structure of claim 1 , wherein the thermal-conductive transparent liquid is an electric insulated liquid.8. The LED ...

LIGHT EMITTING DIODE CHIP, LIGHT EMITTING DIODE PACKAGE STRUCTURE, AND METHOD FOR FORMING THE SAME

A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency. 145-. (canceled)46. A light emitting diode chip , comprising:a growth substrate having a first boundary; anda stack structure depositing on the growth substrate, wherein the stack structure comprises a first semiconductor layer, a light emitting layer, and a second semiconductor layer formed sequentially thereon, and the stack structure further having has a second boundary,wherein the light emitting diode chip is characterized by a connecting layer disposed on a top surface of the second semiconductor layer, and an interface between the connecting layer and the second semiconductor layer occupies 20-99% of the top surface of the second semiconductor layer, and a minimum horizontal distance between the first boundary and the second boundary is of more than about 3 μm to prevent cracking when stripping away the growth substrate from the stack structure.47. The light emitting diode chip of claim 46 , wherein the minimum horizontal distance is of more than about 10 μm.48. The light emitting diode chip of claim 46 , further comprising a passivation layer disposed on side walls of the light emitting layer and side walls of the first semiconductor layer.49. The light emitting diode chip of claim 48 , wherein the passivation layer is further disposed between the second semiconductor layer and the connecting layer claim 48 , wherein a portion of the connecting layer still directly contacts the second semiconductor layer.50. The light emitting diode chip of claim 46 , wherein the ...

LIGHT EMITTING DIODE CHIP, LIGHT EMITTING DIODE PACKAGE STRUCTURE, AND METHOD FOR FORMING THE SAME

A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than O. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency. 1. A method for forming a light emitting diode , comprising:providing a substrate having a first semiconductor layer, a light emitting layer and a second semiconductor layer formed thereon sequentially;performing a patterning process to the first semiconductor layer, the light emitting layer and the second semiconductor layer to define a plurality of protruded portions and a plurality of depressed portions, wherein a remaining portion of the first semiconductor layer covers the substrate in the depressed portions;forming a plurality of first electrodes on the first semiconductor layer in the depressed portions;forming a plurality of second electrodes on the second semiconductor layer in the protruded portions;cutting the substrate along a scribe line located on the depressed portion, for separating a plurality of light emitting diode chips, wherein the light emitting diode chip has a bonding layer and a remained substrate portion, wherein the bonding layer has a plurality of voids, or a minimum horizontal distant between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0;bonding the light emitting diode chip with a carrier substrate via the bonding layer;forming a surrounding layer on the carrier substrate to surround the light emitting diode;removing the remained substrate portion to form a cavity; andfilling a wavelength conversion layer into the cavity.2. A light emitting diode chip , comprising:a substrate having a ...

SEMICONDUCTOR LASER STRUCTURE

A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Transfer support and transfer module

A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.

TRANSFER SUPPORT AND TRANSFER MODULE

A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided. 1. A transfer support , adapted to contact a plurality of elements , the transfer support comprises a first surface , a second surface opposite to the first surface , a recess located on the second surface , a plurality of platforms protruded from the first surface , a plurality of supporting pillars distributed in the recess and a plurality of through holes , wherein the platforms comprise carry surfaces adapted to contact the elements , the through holes extend from the carry surfaces of the platforms to the recess.2. The transfer support according to claim 1 , wherein two of the adjacent supporting pillars are spaced from each other to form an airway passage.3. The transfer support according to claim 1 , wherein a hardness of at least one portion of the platforms in contact with the elements is greater than a hardness of the elements.4. The transfer support according to claim 1 , further comprising:a plurality of protective patterns, respectively disposed on the carry surfaces, wherein the protective patterns are not connected with each other, and a hardness of the protective patterns is greater than a hardness of the elements.5. The transfer support according to claim 4 , wherein the protective patterns at least partially cover the carry surfaces.6. The transfer support according to claim 4 , wherein the ...

LIGHT-EMITTING DEVICE AND DISPLAY APPARATUS

A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad. 1. A light-emitting device , comprising:an epitaxial layer, comprising a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer;a support layer, covering the second type doped semiconductor layer;an insulating layer, covering the epitaxial layer and the support layer;a first electrode pad; anda second electrode pad, wherein the first electrode pad and the second electrode pad are disposed on the insulating layer, and the first electrode pad and the second electrode pad are electrically connected to the first type doped semiconductor layer and the second type doped semiconductor layer respectively, and the support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.2. The light-emitting device according to ...

SUBSTRATE, METHOD OF FABRICATING THE SAME, AND APPLICATION THE SAME

Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes. 1. A substrate , comprising:a substrate material;two conductive structures, respectively extending from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material; andat least one diode, embedded in the substrate material at a sidewall of one of the through holes.2. The substrate according to claim 1 , wherein each of the conductive structures comprises:a first electrode, disposed on the first surface of the substrate material;a second electrode, disposed on the second surface of the substrate material; anda connecting portion, disposed between the first electrode and the second electrode to electrically connect the first electrode to the second electrode.3. The substrate according to claim 2 , further comprising a patterned insulation layer claim 2 , disposed between the substrate material and the first electrodes and between the substrate material and the second electrodes.4. The substrate according to claim 2 , wherein the substrate material is of a first conductivity type claim 2 , and the at least one diode comprises:a first doped region of a second conductivity type, located in the substrate material at the sidewall of the one of the through holes.5. The substrate according to claim 4 , wherein the first doped region is in contact with at least a part of a sidewall of the connecting portion.6. The substrate according to claim 4 , further comprising an insulation structure claim 4 , disposed on two sidewalls of the connecting portions to electrically isolate the first ...

SEMICONDUCTOR LASER STRUCTURE

A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt. 1. A semiconductor laser structure , comprising:a central thermal shunt, located on a SOI substrate having a buried oxide layer surrounding the central thermal shunt,a ring shaped silicon waveguide located on the buried oxide layer and surrounding the central thermal shunt, wherein the ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between;a contiguous thermal shunt covering a portion of the buried oxide layer and surrounding the ring shaped silicon waveguide;an adhesive layer covering the ring shaped silicon waveguide and the buried oxide layer; anda laser element covering the central thermal shunt, the adhesive layer and the contiguous thermal shunt.2. The structure of claim 1 , wherein a material of the adhesive layer includes BCB claim 1 , silicon oxide claim 1 , silicon nitride or GaN claim 1 , while a material of the ring shaped silicon waveguide includes silicon claim 1 , polysilicon or the lamination thereof.3. The structure of claim 1 , wherein a voltage is applied to the P- ...

LIGHT-EMITTING DEVICE AND DISPLAY APPARATUS

A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad. 1. A light-emitting device , comprising:an epitaxial layer, comprising a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer;a support layer, covering the second type doped semiconductor layer and having a concave area recessed inward the epitaxial layer;an insulating layer, covering the epitaxial layer and the support layer;a first electrode pad; and the first electrode pad and the second electrode pad are disposed on the insulating layer;', 'the first electrode pad and the second electrode pad are electrically connected to the first type doped semiconductor layer and the second type doped semiconductor layer respectively;', 'the support layer extends from a first position below the first electrode pad to a second position below the second electrode pad; and the first ...

LIGHT EMITTING DIODE

A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED. 1. A light emitting diode , comprising: a first semiconductor layer;', 'a second semiconductor layer, stacked with the first semiconductor layer;', 'a light emitting layer, disposed between the first semiconductor layer and the second semiconductor layer; and', 'an undoped semiconductor layer, covering the first semiconductor layer and forming a roughened structure;, 'a semiconductor stacked structure, comprisinga substrate, carrying the semiconductor stacked structure and facing the second semiconductor layer;a first electrode, disposed between the second semiconductor layer and the substrate and electrically connected to the second semiconductor layer and the substrate; anda second electrode, disposed on the first semiconductor layer and exposed by the undoped semiconductor layer.2. The light emitting diode according to claim 1 , wherein the second electrode is embedded in the first semiconductor layer.3. The light emitting diode according to claim 1 , wherein a depression is formed in passing through the undoped semiconductor layer and depressing a part of the first semiconductor layer claim 1 , and the second electrode is located in the depression by keeping a distance from a side wall of the depression.4. The light emitting diode according to claim ...

LIGHT EMITTING DIODE

A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process. 1. A light emitting diode , comprising: a first semiconductor layer;', 'a second semiconductor layer, stacked with the first semiconductor layer; and', 'a light emitting layer, disposed between the first semiconductor layer and the second semiconductor layer;, 'a semiconductor stacked structure, comprisinga substrate, carrying the semiconductor stacked structure and facing the second semiconductor layer;a first electrode, disposed between the second semiconductor layer and the substrate and electrically connected to the second semiconductor layer and the substrate;a second electrode, disposed on the first semiconductor layer; andan outer light extraction layer, disposed on the first semiconductor layer, wherein the outer light extraction layer forms a roughened structure, and a light refractive index of the outer light extraction layer is less than a light refractive index of the first semiconductor layer.2. The light emitting diode according to claim 1 , wherein the roughened structure comprises a plurality of pyramids or a plurality of micro lenses.3. The light emitting diode according to claim 1 , wherein the outer light extraction layer comprises a transparent conductive material claim 1 , and the outer light extraction layer is electrically connected to the second electrode.4. The light emitting diode according to claim 1 , further comprising at least one ...

LIGHT EMITTING DIODE

A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode. 1. A light emitting diode , comprising: a first semiconductor layer comprising a first surface and a second surface opposite to each other, the first semiconductor layer comprising a first region and a second region;', 'a second semiconductor layer disposed on the second surface and located in the first region; and', 'a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer;, 'a semiconductor stacked structure, comprisinga substrate disposed opposite to the semiconductor stacked structure and toward the second surface, wherein the substrate has a first conductive layer and a second conductive layer thereon;a first electrode disposed between the second semiconductor layer and the first conductive layer;a second electrode disposed on the first surface; anda third electrode at least located in the second region and at least a part of the third electrode disposed between the first semiconductor layer and the second conductive layer, the third electrode being electrically ...

PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF, AND DISPLAY HAVING THE SAME

A pixel structure includes an original light emitting diode die and a repairing light emitting diode die emitting light of a same color, and an extending conductor. The original light emitting diode die includes a first epitaxial layer, and a first electrode and a second electrode disposed at opposite sides of the first epitaxial layer. The repairing light emitting diode die includes a second epitaxial layer, and a third electrode and a fourth electrode disposed at a same side of the second epitaxial layer. The extending conductor includes a first portion, a second portion and a cut-off region. The first portion is electrically connected to the second electrode of the original light emitting diode die. The second portion is electrically connected to the third electrode of the repairing light emitting diode die. The cut-off region is located in the first portion or between the first portion and the second portion. 1. A pixel structure , comprising:an original light emitting diode die, comprising a first epitaxial layer, a first electrode and a second electrode, the first electrode and the second electrode being disposed at opposite sides of the first epitaxial layer;a repairing light emitting diode die, a color of light emitted by the repairing light emitting diode die being the same as a color of light emitted by the original light emitting diode die, wherein the repairing light emitting diode die comprises a second epitaxial layer, a third electrode and a fourth electrode, and the third electrode and the fourth electrode are disposed at a same side of the second epitaxial layer; andan extending conductor, comprising a first portion and a second portion, the first portion being electrically connected to the second electrode of the original light emitting diode die, and the second portion being electrically connected to the third electrode of the repairing light emitting diode die,wherein the extending conductor further comprises a cut-off region, and the cut-off ...

DISPLAY PIXEL AND DISPLAY PANEL

A display pixel suitable for being arranged on a carrier is provided. The display pixel includes a plurality of light-emitting diode chips. The light-emitting diode chips are disposed on and electrically connected to the carrier. Each of the light-emitting diode chips respectively serves as a sub-pixel and includes a semiconductor device layer, and the semiconductor device layer includes a display light-emitting mesa and at least one redundant light-emitting mesa. During a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light. A display panel including a plurality of the display pixels mentioned above is also provided. 1. A display pixel adapted to be arranged on a carrier , the display pixel comprising:a plurality of light-emitting diode chips arranged on and electrically connected to the carrier, each of the light-emitting diode chips respectively acting as a sub-pixel and comprising a semiconductor device layer, the semiconductor device layer comprising a display light-emitting mesa and at least one redundant light-emitting mesa, wherein during a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light.2. The display pixel as recited in claim 1 , wherein a side length of each of the light-emitting diode chips is shorter than or equal to 100 micrometers.3. The display pixel as recited in claim 1 , wherein the semiconductor device layer in each of the light-emitting diode chips comprises:a first-type doped semiconductor layer;a first light-emitting layer and a second light-emitting layer separated from each other and arranged on a portion of the first-type doped semiconductor layer; anda second-type doped semiconductor layer comprising a first ...

Pixel structure

A pixel structure including a substrate, a first conductor, a second conductor, and a plurality of dies is provided. The first conductor is disposed on the substrate and includes a plurality of first body portions extending along a first direction, a plurality of first branch portions extending along a second direction, and a plurality of second branch portions extending along the first direction. The second conductor is disposed on the substrate and includes a plurality of second body portions extending along the second direction and a plurality of third branch portions extending along the first direction. The die includes two electrodes, wherein the first branch portions are connected between the first body portions and the second branch portions, and the two electrodes are respectively connected to the first branch portions and the second body portions or respectively connected to the second branch portions and the third branch portions.

Subpixel structure, pixel structure, and light emitting diode chip for the same

A subpixel structure includes a substrate and a light emitting diode chip. The light emitting diode chip is disposed on the substrate. The light emitting diode chip has a chip area and a light emitting area, and the light emitting area is less than or equal to one tenth of the chip area.

Pixel structure having repairing light emitting diode die and extending conductor and display having pixel structure

A pixel structure includes an original light emitting diode die and a repairing light emitting diode die emitting light of a same color, and an extending conductor. The original light emitting diode die includes a first epitaxial layer, and a first electrode and a second electrode disposed at opposite sides of the first epitaxial layer. The repairing light emitting diode die includes a second epitaxial layer, and a third electrode and a fourth electrode disposed at a same side of the second epitaxial layer. The extending conductor includes a first portion, a second portion and a cut-off region. The first portion is electrically connected to the second electrode of the original light emitting diode die. The second portion is electrically connected to the third electrode of the repairing light emitting diode die. The cut-off region is located in the first portion or between the first portion and the second portion.

A light source for various beam-shape led luminaries

Light emitting diode package structure and method for fabricating the same

The present invention discloses a light emitting diode (LED) package structure, which includes a carrier, a first protrusion, a LED chip, and an adhesion layer. The first protrusion is disposed on the carrier and has a first opening to expose the carrier, wherein the first protrusion is formed by a thermal conductive material. The LED chip is disposed in the first opening on the carrier, and a ratio between a width of the first opening and a width of the LED chip is 1˜1.5. The adhesion layer is disposed between the LED chip and the carrier to bond the LED chip to the carrier.

Thin film light emitting diode device

一種薄膜發光二極體裝置，包括基板、發光二極體、絕緣層及導電層。發光二極體設置於基板的頂面，且彼此之間有空隙。每一發光二極體包括第一、第二半導體層及發光層。第2m-1個發光二極體的第一半導體層位於基板與發光層之間，第2m個發光二極體的第二半導體層位於基板與發光層之間，m為大於等於1的整數。絕緣層填入發光二極體間的空隙。導電層自第2m-1個發光二極體的第二半導體層上跨越絕緣層接觸第2m個發光二極體的第一半導體層，使第2m-1個發光二極體與第2m個發光二極體電性串聯。

Light emitting diode chip, light emitting diode package structure, and method for forming the same

A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency.

Light emitting diode chip, package structure of the same, and fabricating method thereof

Method for fabricating a light emitting diode package structure

The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a LED chip are disposed on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.

Light emitting diode structure, led packaging structure using the same and method of forming the same

A light emitting diode (LED) structure, a LED packaging structure, and a method of forming LED structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure has a first semiconductor layer, an active layer and a second semiconductor layer that are laminated on the first surface. The electrode is disposed apart from the stacked structure on the first surface. The isolation layer is disposed on the first surface to surround the stacked structure as well as cover the lateral sides of the active layer. The conductive thin film layer connects the electrode to the stacked structure and covers the stacked structure.

Light-emitting diode package structure

Method for fabricating wafer-level light emitting diode structure

一種晶圓級發光二極體結構之製造方法，包含：提供一生長基板，其上依序成長有一第一半導體層、一發光層及一第二半導體層；對該第一半導體層、該發光層及該第二半導體層進行一圖形化製程，定義出複數第一凹陷區以及複數第二凹陷區，其中複數疊層結構係對應形成於該第二凹陷區內，以及一第一半導體層之延伸區係對應配置於與一預定切割線重疊的該第一凹陷區內；形成至少一第一電極於該第一凹陷區內之該第一半導體層延伸區；以及，形成一第二電極於該第二凹陷區內之疊層結構上。

Display pixel with redundant element and display panel

A display pixel suitable for being arranged on a carrier is provided. The display pixel includes a plurality of light-emitting diode chips. The light-emitting diode chips are disposed on and electrically connected to the carrier. Each of the light-emitting diode chips respectively serves as a sub-pixel and includes a semiconductor device layer, and the semiconductor device layer includes a display light-emitting mesa and at least one redundant light-emitting mesa. During a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light. A display panel including a plurality of the display pixels mentioned above is also provided.

Light-emitting diode package structure

一種發光二極體封裝結構包括一承載基板、至少一發光二極體晶片、一光學元件以及一高導熱透光液體。發光二極體晶片配置於承載基板上，並具有一主動層。光學元件配置於承載基板上，光學元件與承載基板之間形成一封閉空間，且發光二極體晶片位於封閉空間中。高導熱透光液體填滿於封閉空間中。

Light emitting diode

A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.

Pixel structure having repairing light emitting diode die and extending conductor and display having pixel structure

A pixel structure includes an original light emitting diode die and a repairing light emitting diode die emitting light of a same color, and an extending conductor. The original light emitting diode die includes a first epitaxial layer, and a first electrode and a second electrode disposed at opposite sides of the first epitaxial layer. The repairing light emitting diode die includes a second epitaxial layer, and a third electrode and a fourth electrode disposed at a same side of the second epitaxial layer. The extending conductor includes a first portion, a second portion and a cut-off region. The first portion is electrically connected to the second electrode of the original light emitting diode die. The second portion is electrically connected to the third electrode of the repairing light emitting diode die. The cut-off region is located in the first portion or between the first portion and the second portion.

發光二極體晶圓及其製造方法

一種發光二極體之製造方法係適於製造發光二極體晶圓，製造方法係對應各個發光二極體晶片所產生的晶片的發光特性，而個別形成特定的光學轉換部，此光學轉換部係一對一對應發光二極體晶片與其發光特性，此光學轉換部藉由適當調整轉換參數，如轉換部容積、螢光材料濃度等，而得以使具有不同晶片發光特性的光線經過光學轉換部後所形成之封裝後發光特性得以落在一預定色度座標之規格區間。

Subpixel structure having light shielding layer, pixel structure having light shielding layer, and light emitting diode chip light shielding layer

A subpixel structure includes a substrate and a light emitting diode chip. The light emitting diode chip is disposed on the substrate. The light emitting diode chip has a chip area and a light emitting area, and the light emitting area is less than or equal to one tenth of the chip area.

ディスプレイパネル

【課題】底プレート、複数のディスプレイモジュール、および複数の接続ピクセルパッケージを含むディスプレイパネルの提供。【解決手段】ディスプレイモジュールは、底プレート上にアレイ配列でタイル状に配置される。ディスプレイモジュールのそれぞれは、回路基板と、複数のディスプレイピクセルとを含む。回路基板は、複数の接続電極を含む。ディスプレイピクセルは、回路基板上に配置され、ディスプレイピクセルのうちの少なくとも１つは、少なくとも１つの第２ピクセルユニットを有する。接続ピクセルパッケージのそれぞれは、少なくとも１つの第１ピクセルユニットを含む。接続ピクセルパッケージは、ディスプレイモジュールを接続するために、隣接する回路基板の接続電極上に配置される。少なくとも１つの第１ピクセルユニットの発光面と、少なくとも１つの第２ピクセルユニットの発光面とは、同一平面上にある。【選択図】図７

光束整形發光裝置

一種光束整形發光裝置，可包括一光源及一光束整形件。光源用以提供一光線。光線經過光束整形件後之視野為68度至90度之範圍內。光束整形件可包括一光束整形反射杯或一光束整形膜。光束整形反射杯具有一入光口、一出光口及一反射面。出光口所圍繞之面積大於入光口所圍繞之面積。光源設置於入光口。反射面位於入光口及出光口之間。反射面之第一區域之第一曲率半徑大於反射面之第二區域之第二曲率半徑。光束整形膜覆蓋於光源上。光束整形膜包括一本體及多個微結構。微結構以一設置圖樣設置於本體上。微結構之間具有沿一方向延伸之多個溝槽。

Transparent display

A transparent display includes a transparent substrate, a wiring layer, a plurality of light-emitting package units, and a plurality of connecting elements. The wiring layer is disposed on a surface of the transparent substrate. Each of the light-emitting package units includes a micro-substrate, frontward light-emitting elements, backward light-emitting elements, and a sealant. The micro-substrate has a first surface facing away from the transparent substrate and a second surface facing the transparent substrate. The frontward light-emitting elements are disposed on the first surface of the micro-substrate, in which the micro-substrate is configured to block the light from the frontward light-emitting elements toward the transparent substrate. The backward light-emitting elements are disposed on the second surface of the micro-substrate. The sealant covers the micro-substrate, the frontward light-emitting elements, and the backward light-emitting elements. The connecting elements electrically connect the light-emitting package units to the wiring layer, respectively.

Semiconductor laser structure

A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Light emitting diode

A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.