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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 6. Отображено 6.
02-10-2018 дата публикации

Neuron circuits

Номер: US0010089574B2
Автор: Brent Buchanan, Sity Lam, Le Zheng, BUCHANAN BRENT, LAM SITY, ZHENG LE, Buchanan, Brent, Lam, Sity, Zheng, Le
Принадлежит: Hewlett Packard Enterprise Development LP, HEWLETT PACKARD ENTPR DEV LP, HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Examples disclosed herein relate to neuron circuits and methods for generating neuron circuit outputs. In some of the disclosed examples, a neuron circuit includes a memristor and first and second current mirrors. The first current mirror may source a first current through the memristor and the second current mirror may sink a second current through the memristor. The memristor may generate a voltage output as a function of the sourced first current and the sunk second current through the memristor.

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Номер записи: 1
24-11-2011 дата публикации

POLYMER AND POLYMER-NANOPARTICLE COMPOSITIONS

Номер: US20110284830A1
Автор: Zhang-Lin Zhou, Lihua Zhao, Sity Lam, Gary Gibson, Jian Pei, ZHOU ZHANG-LIN, ZHAO LIHUA, LAM SITY, GIBSON GARY, PEI JIAN
Принадлежит:

A polymer-nanoparticle composition of formula II includes a polymer of formula I. The polymer has two portions. One portion of the polymer includes a binding group that binds to a nanoparticle. The other portion of the polymer includes a hydrophobic moiety.

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Номер записи: 2
19-05-2016 дата публикации

MEMRISTOR AND METHODS FOR MAKING THE SAME

Номер: US20160141492A1
Автор: Xia Sheng, Xuema Li, Sity Lam, SHENG XIA, LI XUEMA, LAM SITY
Принадлежит:

An example of the memristor includes a bottom electrode, a switchable material positioned on the bottom electrode, and a cured negative or positive resist that forms an interlayer dielectric positioned on the switchable material. An open area is formed in the interlayer dielectric. The open area exposes a surface of the switchable material. A top electrode is positioned in contact with the exposed surface of the switchable material at the open area. 1. A method for making a memristor , comprising:depositing a negative resist on a switching layer that is positioned on an electrode;simultaneously forming an interlayer dielectric and patterning an open area in the interlayer dielectric by selectively exposing the negative resist to a lithography process, whereby an exposed area of the negative resist is cured to form the interlayer dielectric;exposing a surface of the switching layer at the open area in the interlayer dielectric;forming an other electrode on the surface of the switching layer at the open area; andallowing the interlayer dielectric to remain in the memristor.2. The method as defined in wherein the lithography process is selected from the group consisting of photolithography claim 1 , laser lithography claim 1 , electron beam lithography claim 1 , ion beam lithography claim 1 , and nano-imprint lithography.3. The method as defined in wherein:the lithography process is nano-imprint lithography involving a nano-imprint mold and ultraviolet curing or thermal curing;the negative resist is an imprint resist; andthe exposing of the surface of the switching layer is accomplished by performing reactive ion etching to remove cured imprint resist within the open area.4. The method as defined in wherein:the lithography process is photolithography; anda photomask is used to selectively expose the negative resist to ultraviolet light such that the negative resist at the open area remains unexposed to the ultraviolet light.5. The method as defined in wherein the ...

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Номер записи: 3
26-01-2012 дата публикации

EMISSIVE SEMI-INTERPENETRATING POLYMER NETWORKS

Номер: US20120018716A1
Автор: Lihua Zhao, Zhang-Lin Zhou, James A. Brug, Sity Lam, Gary Gibson, ZHAO LIHUA, ZHOU ZHANG-LIN, BRUG JAMES A, LAM SITY, GIBSON GARY, BRUG JAMES A.
Принадлежит: Hewlett Packard Development Co LP

An emissive semi-interpenetrating polymer network (E-semi-IPN) includes a semi-interpenetrating polymer network and an emissive material interlaced in the polymer network. The semi-interpenetrating polymer network includes in a crosslinked state one or more of a polymerized organic monomer and a polymerized organic oligomer, polymerized water soluble polymerizable agent, and one or more polymerized polyfunctional cross-linking agents. The E-semi-IPN may be employed as an E-semi-IPN layer ( 16, 36, 56 ) in organic light emitting devices ( 10, 20, 30, 40 ).

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Номер записи: 4
15-03-2018 дата публикации

NEURON CIRCUITS

Номер: US20180075337A1
Автор: Buchanan Brent, LAM SITY, Zheng Le
Принадлежит:

Examples disclosed herein relate to neuron circuits and methods for generating neuron circuit outputs. In some of the disclosed examples, a neuron circuit includes a memristor and first and second current mirrors. The first current mirror may source a first current through the memristor and the second current mirror may sink a second current through the memristor. The memristor may generate a voltage output as a function of the sourced first current and the sunk second current through the memristor. 1. A neuron circuit , comprising:a first current mirror to source a first current through a memristor;a second current mirror to sink a second current through the memristor; andthe memristor to generate a voltage output for the neuron circuit as a function of the sourced first current and the sunk second current through the memristor.2. The neuron circuit of claim 1 , wherein the memristor is to generate a voltage output substantially similar to a sigmoid function.3. The neuron circuit of claim 1 , wherein:the first current mirror is to generate the first current based on a first input current provided by a first dot product engine; andthe second current mirror is to generate the second input current based on a second input current provided by a second dot product engine.4. The neuron circuit of claim 3 , comprising:a third current mirror between the first current mirror and the first dot product engine, the third current mirror to generate an intermediate input current from the first input current provided by the first dot product engine;wherein the first current mirror is to generate the first input current based on the intermediate input current.5. The neuron circuit of claim 1 , wherein the memristor is to provide the generated voltage output to a dot product engine.6. The neuron circuit of claim 1 , wherein the generated voltage output is a non-linear voltage output.7. The neuron circuit of claim 1 , wherein the memristor includes a tantalum oxide switching material ...

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Номер записи: 5
05-02-2015 дата публикации

Memristor and methods for making the same

Номер: WO2015016851A1
Автор: Sity Lam, Xia Sheng, Xuema Li
Принадлежит: Hewlett-Packard Development Company, L.P.

An example of the memristor includes a bottom electrode, a switchable material positioned on the bottom electrode, and a cured negative or positive resist that forms an interlayer dielectric positioned on the switchable material. An open area is formed in the interlayer dielectric. The open area exposes a surface of the switchable material. A top electrode is positioned in contact with the exposed surface of the switchable material at the open area.

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Номер записи: 6