04-01-2012 дата публикации
Номер: CN0101969062B
Принадлежит:
The invention relates to a silicon N-type semiconductor combined device on an insulator for improving current density. The silicon N-type semiconductor combined device comprises a P-type substrate, wherein the P-type substrate is provided with a buried oxygen layer; the buried oxygen layer is provided with a P-type epitaxial layer, and the P-type epitaxial layer is divided into a region I and a region II; the region I is an insulated gate bipolar device region and comprises an N-type drift region, a P-type deep trap, a N-type buffer trap, a P-type drain region, an N-type source region and a P-type body contact region; a silicon face is correspondingly provided with a field oxide and a gate oxide, and the gate oxide is provided with a polysilicon gate; and the region II is a high-voltage triode region and comprises an N-type triode drift region, an N-type triode buffer trap, a P-type emitter region and an N-type base region. The silicon N-type semiconductor combined device is characterized ...
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