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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 6. Отображено 6.
13-10-2010 дата публикации

Realization method of speaking right signaling of broadband multimedia cluster system dispatching station based on TD-LTE (Time Division Long Term Evolution)

Номер: CN0101860810A
Принадлежит:

The invention discloses a realization method of a speaking right signaling of a broadband multimedia cluster system dispatching station based on TD-LTE (Time Division Long Term Evolution), which relates to a realization method of a speaking right signaling of a broadband multimedia cluster system dispatching station and solves the problems of low efficiency and easy mistake making of the traditional digital cluster technology. The realization method of the speaking right signaling is completed on the basis of a broadband multimedia cluster system. The system comprises a terminal connected with a broadband wireless access subsystem through an LTE-Uu (Long Term Evolution User to User) interface, the broadband wireless access subsystem is connected with a network subsystem through an S1-MME (Mobility Management Entity) interface, and the network subsystem and the broadband wireless access subsystem are connected with an operation maintenance subsystem. The specific procedures of the realization ...

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20-07-2011 дата публикации

High-robustness back biased diode applied to high-voltage static protection

Номер: CN0102130184A
Принадлежит:

The invention discloses a high-robustness back biased diode applied to high-voltage static protection, comprising a P type substrate, wherein a buried oxide layer is arranged on the P type substrate; a P type epitaxial layer is arranged on the buried oxide layer; a first low-voltage P type well, a first low-voltage N type well and a second high-voltage N type well are arranged at the upper part of the P type epitaxial layer; a P type anode region is arranged in the first low-voltage P type well; an N type cathode region is arranged in the second high-voltage N type well and cathode metal is connected to the N type cathode region; and anode metal is connected to the P type anode region. The high-robustness back biased diode is characterized in that a P type cathode region connected to the cathode metal is arranged on the upper surface inside the second high-voltage N type well and is tightly attached to the right boundary of the N type cathode region; a second P type buffer well is arranged ...

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30-03-2011 дата публикации

TD-LTE-based wideband multimedia cluster system and method for implementing hierarchical dispatching of multiple dispatcher stations of same

Номер: CN0101998288A
Принадлежит:

The invention provides a time division-long time evolution (TD-LTE)-based wideband multimedia cluster system and a method for implementing hierarchical dispatching of multiple dispatcher stations. The invention relates to a method for hierarchically dispatching by the multiple dispatcher stations, which solves the problem that the commanding and dispatching requirements of different industries are not conveniently met due to high cost and complicated setting of hardware configuration of the multiple dispatcher stations, and single dispatching mode of the multiple dispatcher stations in the conventional digital cluster technology. The system comprises a terminal, a broadband wireless access subsystem, a network subsystem and an operation maintenance subsystem. The method comprises the following steps that: as the level and authorization setting of a direct current (DC) cable dispatcher station are stored in a home subscriber server (HSS) attribution domain signing server, when the DC cable ...

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04-01-2012 дата публикации

Silicon N-type semiconductor combined device on insulator for improving current density

Номер: CN0101969062B
Принадлежит:

The invention relates to a silicon N-type semiconductor combined device on an insulator for improving current density. The silicon N-type semiconductor combined device comprises a P-type substrate, wherein the P-type substrate is provided with a buried oxygen layer; the buried oxygen layer is provided with a P-type epitaxial layer, and the P-type epitaxial layer is divided into a region I and a region II; the region I is an insulated gate bipolar device region and comprises an N-type drift region, a P-type deep trap, a N-type buffer trap, a P-type drain region, an N-type source region and a P-type body contact region; a silicon face is correspondingly provided with a field oxide and a gate oxide, and the gate oxide is provided with a polysilicon gate; and the region II is a high-voltage triode region and comprises an N-type triode drift region, an N-type triode buffer trap, a P-type emitter region and an N-type base region. The silicon N-type semiconductor combined device is characterized ...

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09-02-2011 дата публикации

Silicon N-type semiconductor combined device on insulator for improving current density

Номер: CN0101969062A
Принадлежит:

The invention relates to a silicon N-type semiconductor combined device on an insulator for improving current density. The silicon N-type semiconductor combined device comprises a P-type substrate, wherein the P-type substrate is provided with a buried oxygen layer; the buried oxygen layer is provided with a P-type epitaxial layer, and the P-type epitaxial layer is divided into a region I and a region II; the region I is an insulated gate bipolar device region and comprises an N-type drift region, a P-type deep trap, a N-type buffer trap, a P-type drain region, an N-type source region and a P-type body contact region; a silicon face is correspondingly provided with a field oxide and a gate oxide, and the gate oxide is provided with a polysilicon gate; and the region II is a high-voltage triode region and comprises an N-type triode drift region, an N-type triode buffer trap, a P-type emitter region and an N-type base region. The silicon N-type semiconductor combined device is characterized ...

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13-10-2010 дата публикации

Broadband multimedia cluster architecture system based on TD-LTE (Time Division Long Term Evolution)

Номер: CN0101860973A
Принадлежит:

The invention discloses a broadband multimedia cluster architecture system based on TD-LTE (Time Division Long Term Evolution), which relates to a broadband multimedia cluster architecture system and solves the problems of low efficiency and easy mistake making of the traditional digital cluster technology. The broadband multimedia cluster system comprises a terminal, a broadband wireless access subsystem, a network subsystem and an operation maintenance subsystem. The terminal comprises a handheld mobile station, a vehicle mounted station, a fixed station, a wireless dispatching station and a plurality of DC (data center) wired dispatching stations. The broadband wireless access subsystem comprises a plurality of eNodeB evolutionary base stations. The terminal is connected with the broadband wireless access subsystem through an LTE-Uu (Long Term Evolution User to User) interface, the broadband wireless access subsystem is connected with the network subsystem through an S1-MME (Mobility ...

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