Method of manufacturing a semiconductor device

A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape.

Method of Manufacturing Light Emitting Device

A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided. 129-. (canceled)30. A method for manufacturing a light emitting device comprising:ejecting a solution containing a light-emitter composition toward an electrode under a pressure lower than atmospheric pressure to form a carrier injecting layer; andforming a light emitting layer over the carrier injecting layer,wherein the solution is ejected by an ink jet method.31. The method for manufacturing the light emitting device according to claim 30 , wherein the carrier injecting layer is a hole injecting layer.32. The method for manufacturing the light emitting device according to claim 30 , further comprising a step of heating the electrode while the solution is ejected.33. The method for manufacturing the light emitting device according to claim 30 , wherein the solution is ejected by a solution applying device including plural nozzles.34. The method for manufacturing the light emitting device according to claim 33 , wherein each of the plural nozzles is provided with a piezoelectric element.35. The method for manufacturing the light emitting device according to claim 30 , wherein the electrode is arranged to be approximately perpendicular with respect to a horizontal plane in the ejecting step.36. The method for manufacturing the light emitting device according ...

DEVICE SUBSTRATE, LIGHT EMITTING DEVICE AND DRIVING METHOD OF LIGHT EMITTING DEVICE

A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series. 1. A light emitting device comprising: a light emitting element;', 'a first transistor; and', 'a second transistor; and, 'a pixel comprisinga power supply line overlapping with at least a part of a channel formation region of the first transistor and at least a part of a channel formation region of the second transistor;wherein a channel length of the first transistor is longer than a channel width thereof,wherein a channel length of the second transistor is equal to or shorter than a channel width thereof,wherein gate electrodes of the first transistor and the second transistor are directly connected to each other,wherein each polarity of the first transistor and the second transistor is the same, andwherein the light emitting element, the first transistor and the second transistor are connected in series.2. The light emitting device according to claim 1 , wherein a ratio of the channel length to the channel width of the first transistor is equal to or more than 5.3. The light emitting device according to claim 1 , wherein the polarity of the first transistor is n-type.4. The light emitting device according to claim 1 , wherein a threshold voltage of the first transistor is lower than a threshold voltage of the second transistor.5. The light emitting device according ...

Light-Emitting Module and Light-Emitting Device

Provided is a light-emitting module from which light with uniform brightness can be extracted. Further, provided is a beautiful light-emitting module in which Newton's rings are not observed. The light-emitting module includes a first substrate, a light-emitting element formed on one surface side of the first substrate, a second substrate, a conductive spacer maintaining the gap between the first substrate and the second substrate, and a space in which the light-emitting element is sealed between the first substrate and the second substrate. Further, the pressure in the space is lower than or equal to the atmospheric pressure. Furthermore, the conductive spacer is electrically connected to the second electrode in a position overlapping with a partition provided over the first substrate so as to reduce a voltage drop occurring in the second electrode. 1. A light-emitting module comprising:a first substrate;a first electrode over the first substrate;a second electrode over the first substrate;a first layer containing a light-emitting organic compound between the first electrode and the second electrode;a partition over the first electrode;a second substrate over the first substrate; anda conductive spacer maintaining a gap between the first substrate and the second substrate,wherein the conductive spacer is electrically connected to the second electrode in a position overlapping with the partition, andwherein the conductive spacer comprises an edge in which a corner portion is chamfered to have a curved surface.2. The light-emitting module according to claim 1 ,wherein the conductive spacer provided over the second substrate.3. The light-emitting module according to claim 1 , further comprising a space between the first substrate and the second substrate claim 1 ,wherein a pressure in the space is lower than or equal to an atmospheric pressure.4. The light-emitting module according to claim 1 , further comprising:a second layer containing a light-emitting organic ...

Method of Manufacturing Light Emitting Device

A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided. 129-. (canceled)30. A method for manufacturing a light emitting device comprising:forming a first electrode over a surface of a substrate;forming a hole injecting layer over the first electrode by spin-coating method; andejecting a solution containing a light emitting material toward the first electrode to form a light emitting layer,wherein the surface of the substrate is arranged to be oblique with respect to a horizontal plane at least in the ejecting step.31. The method for manufacturing the light emitting device according to claim 30 ,wherein the solution is ejected under a pressure lower than atmospheric pressure.32. The method for manufacturing the light emitting device according to claim 30 , further comprising forming a second electrode over the light emitting layer claim 30 ,wherein the second electrode has light-transmitting property.33. The method for manufacturing the light emitting device according to claim 30 ,wherein the solution is ejected by an ink jet method.34. The method for manufacturing the light emitting device according to claim 30 , further comprising heating the first electrode while the solution is ejected.35. The method for manufacturing the light emitting device according to claim 30 ,wherein the solution includes a polymer.36. ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor. 1. A semiconductor device comprising:an oxide semiconductor;a first conductor;a second conductor;a third conductor;a fourth conductor;a fifth conductor;a first insulator;a second insulator; anda third insulator,wherein the second insulator is provided with an opening portion penetrating through the second insulator,wherein a region of a bottom surface of the opening portion is in contact with the oxide semiconductor,wherein a region of the first insulator is in contact with a side surface and the bottom surface of the opening portion,wherein a region of the first conductor faces the side surface and the bottom surface of the opening portion with the first insulator positioned therebetween,wherein the second conductor, the third conductor, the fourth conductor, and the fifth conductor are positioned between the oxide semiconductor and the second insulator,wherein a region of a side surface of the second conductor and a bottom surface of the second conductor is in contact with the fourth conductor,wherein a region of a side surface of the third conductor and ...

LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

Occurrence of a crosstalk phenomenon in a light-emitting device including a tandem element is suppressed. A light-emitting device includes: lower electrodes over an insulating layer; a partition over a portion between the lower electrodes, which includes an overhang portion over an end portion of each of the lower electrodes; a first light-emitting unit over each of the lower electrodes and the partition; an intermediate layer over the first light-emitting unit; a second light-emitting unit over the intermediate layer; and an upper electrode over the second light-emitting unit. The distance between the overhang portion and each of the lower electrodes is larger than the total thickness of the first light-emitting unit and the intermediate layer over the lower electrode. 1. A light-emitting device comprising:a first electrode and a second electrode over an insulating layer;a partition over a portion between the first electrode and the second electrode, the partition including an overhang portion over an end portion of each of the first electrode and the second electrode;a first light-emitting unit over the first electrode, the partition, and the second electrode;an intermediate layer over the first light-emitting unit;a second light-emitting unit over the intermediate layer; anda third electrode over the second light-emitting unit,wherein a distance between the overhang portion and each of the first electrode and the second electrode is larger than a total thickness of the first light-emitting unit and the intermediate layer over the first electrode.2. The light-emitting device according to claim 1 , wherein the distance between the overhang portion and each of the first electrode and the second electrode is smaller than or equal to a total thickness of the first light-emitting unit claim 1 , the intermediate layer claim 1 , the second light-emitting unit claim 1 , and the third electrode over the first electrode.3. The light-emitting device according to claim 1 , ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulator and a top surface of the first conductor, and a length between the first conductor and a surface of the second conductor closest to the first conductor is at least greater than a length between the first conductor and the third conductor. 1. A semiconductor device , comprising:a semiconductor over a substrate;a first conductor and a second conductor over the semiconductor;a first insulator over the first conductor and the second conductor;a second insulator over the semiconductor;a third insulator over the second insulating;a third conductor over the third insulating; anda fourth conductor over the third conductor,wherein the third insulator has a region in contact with a side surface of the first insulator,wherein the third conductor and the fourth conductor have a function as a gate electrode,wherein the semiconductor has a first region overlapping a bottom surface of the first conductor, a second region overlapping a bottom surface of the second conductor, and a third region overlapping a bottom surface of the third conductor, andwherein a length between a top surface of the semiconductor and the bottom surface of the third conductor is greater than the length between the first region and the third region.2. A semiconductor device , comprising:a semiconductor over a substrate;a first conductor and a second conductor over the semiconductor;a first insulator over the first conductor and the second conductor;a second insulator over the semiconductor;a third insulator over the second insulating;a third conductor over the third insulating;a fourth conductor over the third conductor; anda fifth conductor between the substrate and the semiconductor,wherein the third insulator has a region in contact with a side surface of the first insulator,wherein the ...

VEHICLE FRONT STRUCTURE

The present disclosure includes: a cowl member that is formed to extend in a vehicle width direction and bulges to the front from a rear side of a motor chamber; a power unit that is fixed to a right side frame in the motor chamber, has a lower portion fixed to a vehicle body, and drives the vehicle by electricity; and a protection bracket provided on an upper surface of the power unit, wherein the protection bracket is configured to abut the cowl member in the case where a frontal collision of a vehicle occurs and the power unit moves downward to the rear. 1. A vehicle front structure comprising:a cowl that is formed to extend in a vehicle width direction and bulge to the front from a rear side of a motor chamber arranged in a front portion of a vehicle;a power supply that is fixed to a right side frame or a left side frame in the motor chamber, has a lower portion fixed to a vehicle body, and is configured to provide power to drive the vehicle by electricity; anda protection bracket that is provided on an upper surface of the power supply, wherein the protection bracket is configured to abut the cowl in a case where a frontal collision of the vehicle occurs and the power supply moves downward to the rear.2. The vehicle front structure of claim 1 , further comprising:a fuel pipe that couples to an internal combustion engine in the motor chamber and a fuel tank arranged in a rear side of the vehicle.3. The vehicle front structure of claim 1 , whereinthe protection bracket has a projected section that is projected upward in a front view.4. The vehicle front structure of claim 3 , whereinthe projected section of the protection bracket is formed at a center in the vehicle width direction of the projection bracket in the front view.5. The vehicle front structure of claim 1 , whereinthe protection bracket has a bent section at a rear end in a side view, the bent section being bent in a circular shape.6. The vehicle front structure of claim 1 , further comprising:a high- ...

IN-VEHICLE STRUCTURE OF ELECTRICAL EQUIPMENT

In an engine compartment, an engine, a generator using the engine as a power source, a motor for driving the vehicle, and a gear box are arranged in alignment in a vehicle width direction. The first high-voltage equipment is vertically provided on a generating unit that includes the engine and the generator. The second high-voltage equipment is vertically provided on a drive unit that includes the motor and the gear box. The first high-voltage equipment and the second high-voltage equipment are coupled by a coupling member that extends substantially horizontally in the vehicle width direction and supports the high-voltage equipment, against a falling load directed from one thereof toward the other. 1. An in-vehicle structure disposed in an engine compartment in a front portion of a vehicle , the in-vehicle structure comprising:a power generator that includes an engine and a generator that uses the engine as a power source;a drive system having a motor that supplies drive power to the vehicle;first high-voltage equipment;second high-voltage equipment; anda mechanical coupler that couples the first high-voltage equipment to the second high-voltage equipment, whereinthe power generator and the drive system are arranged in alignment in a vehicle width direction in the engine compartment,the first high-voltage equipment is vertically provided on one of the power generator and the drive system,the second high-voltage equipment is vertically provided on the other of the power generator and the drive system, andthe mechanical coupler extends substantially horizontally in the vehicle width direction, and supports the first high-voltage equipment and second high-voltage equipment against a falling load imposed on one or both of the first high-voltage equipment and second high-voltage equipment as a result of a vehicle collision.2. The in-vehicle structure according to claim 1 , whereinthe first high-voltage equipment is electrical equipment configured to charge a battery via ...

FRONT SUSPENSION DEVICE FOR VEHICLE

A front suspension device for a vehicle that, when a collision load acts on a suspension arm, reduces the detachment amount of a subframe mounting portion on the rear side from a vehicle body, absorbs collision load energy, and reduces an input to a rear axially supporting portion for a subframe. The front suspension device for a vehicle includes a subframe; a suspension arm having an outer end on which a front wheel is pivotally supported, and an inner end pivotally supported with respect to the subframe; a subframe mounting portion for mounting the subframe to a vehicle body through a fastener from below on the rear side relative to a front-wheel axially supporting portion of the suspension arm; and an upward bend inducing portion for bending the suspension arm upward when a suspension arm frontal collision load is input via the front wheel to the suspension arm. 1. A front suspension device for a vehicle , comprising:a subframe;a suspension arm having an outer end on which a front wheel is pivotally supported, and an inner end pivotally supported with respect to the subframe;a subframe mounting portion configured to mount the subframe to a vehicle body through a fastener from below on a rear side relative to a front-wheel axially supporting portion of the suspension arm; andan upward bend inducing portion configured to bend the suspension arm upward when a suspension arm frontal collision load is input via the front wheel to the suspension arm.2. The front suspension device for a vehicle according to claim 1 , whereinthe suspension arm is a lower arm comprising a front axially supporting portion for the subframe and a rear axially supporting portion located on a rear side relative to the front-wheel axially supporting portion, andthe upward bend inducing portion is formed between the front-wheel axially supporting portion and the rear axially supporting portion.3. The front suspension device for a vehicle according to claim 2 , wherein the upward bend inducing ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor. 1. A semiconductor device comprising:an oxide semiconductor;a first conductor;a second conductor;a third conductor;a fourth conductor;a fifth conductor;a first insulator;a second insulator; anda third insulator,wherein the second insulator is provided with an opening portion penetrating through the second insulator,whereina region of a bottom surface of the opening portion is in contact with the oxide semiconductor,whereina region of the first insulator is in contact with a side surface and the bottom surface of the opening portion,whereina region of the first conductor faces the side surface and the bottom surface of the opening portion with the first insulator positioned therebetween,whereinthe second conductor, the third conductor, the fourth conductor, and the fifth conductor are positioned between the oxide semiconductor and the second insulator,whereina region of a side surface of the second conductor and a bottom surface of the second conductor is in contact with the fourth conductor,whereina region of a side surface of the third conductor and a ...

Light-Emitting Module and Light-Emitting Device

Provided is a light-emitting module from which light with uniform brightness can be extracted. Further, provided is a beautiful light-emitting module in which Newton's rings are not observed. The light-emitting module includes a first substrate, a light-emitting element formed on one surface side of the first substrate, a second substrate, a conductive spacer maintaining the gap between the first substrate and the second substrate, and a space in which the light-emitting element is sealed between the first substrate and the second substrate. Further, the pressure in the space is lower than or equal to the atmospheric pressure. Furthermore, the conductive spacer is electrically connected to the second electrode in a position overlapping with a partition provided over the first substrate so as to reduce a voltage drop occurring in the second electrode. 1. (canceled)2. A display device comprising:a first substrate;a first electrode over the first substrate;a transistor over the first substrate, the transistor being electrically connected to the first electrodea second electrode over the first substrate;a first layer containing a light-emitting organic compound between the first electrode and the second electrode;a partition over the first electrode;a second substrate over the first substrate; anda conductive spacer maintaining a gap between the first substrate and the second substrate,wherein the conductive spacer is electrically connected to the second electrode in a position overlapping with the partition, andwherein the conductive spacer comprises an edge in which a corner portion is chamfered to have a curved surface.3. The display device according to claim 2 ,wherein the conductive spacer provided over the second substrate.4. The display device according to claim 2 , further comprising a space between the first substrate and the second substrate claim 2 ,wherein a pressure in the space is lower than or equal to an atmospheric pressure.5. The display device ...

SIDE VEHICLE-BODY STRUCTURE OF VEHICLE

There are provided a hinge pillar comprising an outer panel and an inner panel which form a closed cross section extending vertically, a hinge pillar reinforcement provided in the closed cross section, a front door attached to the hinge pillar via a pair of upper-and-lower door hinges, and a hinge bracket attaching the lower door hinge to the hinge pillar reinforcement, the hinge bracket being provided to face a front wheel in a longitudinal direction. Herein, the hinge bracket has a lower strength than a portion of the hinge pillar reinforcement where the hinge bracket is provided. Accordingly, when receiving a collision load from the front wheel, the hinge bracket changes a contact portion of the front wheel to the hinge pillar so as to guide the retreating front wheel outward in a vehicle width direction. 1. A side vehicle-body structure of a vehicle , comprising:a hinge pillar comprising an outer panel and an inner panel which form a closed cross section extending vertically;a hinge pillar reinforcement provided in the closed cross section of the hinge pillar;a front door attached to the hinge pillar via a pair of upper-and-lower door hinges; anda hinge bracket attaching the lower door hinge to the hinge pillar reinforcement, the hinge bracket being provided to face a front wheel in a longitudinal direction,wherein said hinge bracket has a lower strength than a portion of said hinge pillar reinforcement where the hinge bracket is provided.2. The side vehicle-body structure of the vehicle of claim 1 , wherein said hinge bracket is integrally formed at said hinge pillar reinforcement claim 1 , and configured to deform when receiving a collision load from the front wheel.3. The side vehicle-body structure of the vehicle of claim 2 , wherein said hinge bracket includes a front wall portion which is provided to face an upper-half portion of the front wheel in the longitudinal direction claim 2 , the front wall portion being configured to slant downward and rearward ...

BONNET STRUCTURE OF AUTOMOTIVE VEHICLE

A bonnet inner panel includes a central protrusion portion protruding upward in a vehicle elevational view and a rear protrusion portion located in back of the central protrusion portion, which are arranged side by side in a vehicle longitudinal direction, a deep-drawn groove is provided between the both protrusion portions to extend in a vehicle width direction, and a hinge reinforcement is provided to extend from a position beside the rear protrusion portion to a position at a rear end of the central protrusion portion, passing through beside the deep-drawn groove. Thereby, the hinge support rigidity of the rear portion of the bonnet having the central protrusion portion can be increased, so that occurrence of any improper deflection or vibration caused to the bonnet by the traveling vibration, the traveling-air pressure or the like can be prevented. 1. A bonnet structure of an automotive vehicle , in which a rear portion of a bonnet including a bonnet outer panel and a bonnet inner panel is pivotally supported at a vehicle body via a hinge ,wherein said bonnet inner panel includes a central protrusion portion protruding upward in a vehicle elevational view and a rear protrusion portion located in back of the central protrusion portion, which are arranged side by side in a vehicle longitudinal direction, a deep-drawn groove is provided between the central protrusion portion and the rear protrusion portion to extend in a vehicle width direction, and a hinge reinforcement is provided to extend from a position beside the rear protrusion portion to a position at a rear end of the central protrusion portion, passing through beside the deep-drawn groove.2. The bonnet structure of the automotive vehicle of claim 1 , wherein said deep-drawn groove curves such that a central portion claim 1 , in the vehicle width direction claim 1 , thereof protrudes forward claim 1 , in a plan view claim 1 , to a position forward of a front end of said hinge reinforcement.3. The bonnet ...

ELECTRIC-DRIVE VEHICLE STRUCTURE

An electric-drive vehicle structure is provided, which includes a cross member bridged between side frames in a front part of a vehicle, a motor suspended below the cross member, a tray fixed to an upper surface of the cross member, and an electric unit for driving a motor, fixed onto the tray. A front edge of the electric unit is located forward of a front edge of the cross member, and the tray has a front edge located, throughout a width thereof, forward of the electric unit. 1. An electric-drive vehicle structure , comprising:a cross member bridged between side frames in a front part of a vehicle;a motor suspended below the cross member;a tray fixed to an upper surface of the cross member; andan electric unit for driving a motor, fixed onto the tray,wherein a front edge of the electric unit is located forward of a front edge of the cross member, andwherein the tray has a front edge located, throughout a width thereof, forward of the electric unit.2. The electric-drive vehicle structure of claim 1 , wherein the front edge of the tray is a wall part rising substantially vertically.3. The electric-drive vehicle structure of claim 2 , wherein a longitudinal dimension of the tray is greater than a longitudinal dimension of the cross member claim 2 , andwherein the tray has attachment pieces aligned with attachment seats provided to a lower part of the electric unit, at locations forward of the cross member and rearward of the cross member.4. The electric-drive vehicle structure of claim 3 , wherein the tray has a first bottom part fastened to the upper surface of the cross member claim 3 , and a second bottom part that is formed continuously from a front part of the first bottom part and located higher than the first bottom part claim 3 , andwherein the attachment seats are provided to the second bottom part. The present disclosure relates to a structure of an electric-drive vehicle which is driven by a motor. More specifically, the present disclosure relates to a ...

DISPLAY DEVICE, MANUFACTURING METHOD OF DISPLAY DEVICE, AND ELECTRONIC DEVICE

A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate. 1. A display device comprising:a first substrate; anda second substrate,wherein a first surface of the first substrate is provided with a first insulating layer,wherein a first surface of the second substrate is provided with a second insulating layer,wherein the first surface of the first substrate and the first surface of the second substrate face each other,wherein an adhesive layer is positioned between the first insulating layer and the second insulating layer, andwherein, in the vicinity of a peripheral portion of the first substrate and the second substrate, a protective film is in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer and the second substrate.2. The display device according to claim 1 ,wherein the protective film is in contact with the first surface of the first substrate and a second surface of the first substrate, andwherein the second surface of the first substrate is an opposite surface of the first substrate from the first surface of the first substrate.3. The display device according to claim 1 , wherein a transistor claim 1 , a capacitor claim 1 , a display element claim 1 , a light-blocking layer claim 1 ...

Display Device and Electronic Device

A display device including a peripheral circuit portion with high operation stability. The display device includes a first substrate and a second substrate. A first insulating layer is on a first plane of the first substrate, and a second insulating layer is on a first plane of the second substrate. An area of the first plane of the first substrate is the same as an area of the first plane of the second substrate. The first plane of the first substrate and the first plane of the second substrate face each other. A bonding layer is between the first insulating layer and the second insulating layer. A protection film is in contact with the first substrate, the first insulating layer, the bonding layer, the second insulating layer, and the second substrate. 1a first substrate;a second substrate;a first insulating layer on a first plane of the first substrate;a second insulating layer on a first plane of the second substrate;a bonding layer between the first insulating layer and the second insulating layer; anda protection film in contact with the first substrate, the first insulating layer, the bonding layer, the second insulating layer, and the second substrate,wherein an area of the first plane of the first substrate is the same as an area of the first plane of the second substrate, andwherein the first plane of the first substrate and the first plane of the second substrate face each other.. A display device comprising: This application is a continuation of copending U.S. application Ser. No. 14/948,720, filed on Nov. 23, 2015 which is incorporated herein by reference.The present invention relates to a display device and an electronic device.Note that one embodiment of the present invention is not limited to the above technical field. The technical field of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. In addition, one embodiment of the present invention relates to a process, a machine, ...

Display Device and Electronic Device

A display device including a peripheral circuit portion with high operation stability. The display device includes a first substrate and a second substrate. A first insulating layer is on a first plane of the first substrate, and a second insulating layer is on a first plane of the second substrate. An area of the first plane of the first substrate is the same as an area of the first plane of the second substrate. The first plane of the first substrate and the first plane of the second substrate face each other. A bonding layer is between the first insulating layer and the second insulating layer. A protection film is in contact with the first substrate, the first insulating layer, the bonding layer, the second insulating layer, and the second substrate. 1. A display device comprising:a first substrate;a second substrate;a first insulating layer on a first plane of the first substrate;a second insulating layer on a first plane of the second substrate;a bonding layer between the first insulating layer and the second insulating layer; anda protection film in contact with the first substrate, the first insulating layer, the bonding layer, the second insulating layer, and the second substrate,wherein an area of the first plane of the first substrate is the same as an area of the first plane of the second substrate, andwherein the first plane of the first substrate and the first plane of the second substrate face each other.2. The display device according to claim 1 , further comprising a transistor claim 1 , a capacitor claim 1 , a display element claim 1 , a light-blocking layer claim 1 , a coloring layer claim 1 , and a spacer between the first plane of the first substrate and the first plane of the second substrate.3. The display device according to claim 1 , wherein the protection film comprises any one of oxygen claim 1 , nitrogen claim 1 , and a metal.4. The display device according to claim 1 , wherein the protection film comprises any one of aluminum oxide claim ...

PARISON TRANSFER APPARATUS

A parison transfer apparatus includes a die core and at least two parison expansion rollers disposed below the die core and having a conical shape. The die core extrudes a parison having a form of a single sheet or cut into a plurality of sheets in an arc shape toward a space below the die core. The parison expansion rollers are arranged to abut against the vicinity of respective side end portions of the arc-shaped parison having the form of the single sheet or the plurality of sheets as a result of the cutting. The parison expansion rollers are configured to be rotated in a direction opposite to a downflow direction of the parison to pull the side end portion of the parison such that a width of the side end portion expands and a shape of the parison changes from the arc shape into a flat plate shape. 1. A parison transfer apparatus comprising:a die core for a blow molding machine for obtaining a blow molded article, the die core being configured to extrude a parison, which has a form of a single sheet or a plurality of sheets as a result of cutting, and which is in an arc shape toward a space below the die core; andat least two parison expansion rollers disposed below the die core, the parison expansion rollers having a conical shape, wherein:the parison expansion rollers are arranged to abut against a vicinity of respective side end portions of the parison which is formed in the arc-shape, and which has the form of the single sheet or the plurality of sheets; andthe parison expansion rollers are configured to be rotated in a direction opposite to a downflow direction of the parison to pull the side end portion of the parison such that a width of the side end portion expands and a shape of the parison changes from the arc shape into a flat plate shape.2. The parison transfer apparatus according to claim 1 , wherein the parison expansion rollers abut against parts of the parison with a length of 30 cm to 50 cm from both side ends of the parison.3. The parison ...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon). 1. (canceled)2. A method for manufacturing a semiconductor device comprising the steps of:forming an insulating layer over an oxide semiconductor layer;forming a groove in the insulating layer;forming a conductive film over the insulating layer such that a part of the conductive film is provided in the groove;forming a gate electrode layer by removing the conductive film partially such that the part of the conductive film remains in the groove;etching the insulating layer such that at least part of the insulating layer which overlaps the oxide semiconductor layer is removed after forming the gate electrode layer; andforming a source region and a drain region by adding an ion to the oxide semiconductor layer using the gate electrode layer as a mask after etching the insulating layer.3. The method for manufacturing a semiconductor device claim 2 , according to claim 2 ,wherein phosphorus, argon, or xenon is added as the ion.4. The method for ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is formed over the substrate; a mask layer is formed over part of the stacked film and then dry etching treatment is performed, so that the stacked film is removed, with a region provided with the mask layer remaining, and a reaction product is formed on a side surface of the remaining stacked film; the reaction product is removed by wet etching treatment after removal of the mask layer; a source electrode and a drain electrode are formed over the stacked film; and a third oxide semiconductor layer, a gate insulating film, and a gate electrode are stacked and formed in this order over the stacked film, and the source electrode and the drain electrode. 1. A method for manufacturing a semiconductor device , the method comprising the steps of:forming a stacked film comprising a first oxide semiconductor layer and a second oxide semiconductor layer over a substrate;forming a mask layer over the stacked film;performing a first dry etching treatment to remove a part of the stacked film by etching the stacked film using the mask layer, thereby forming a reaction product on a side surface of the stacked film;removing the mask layer;performing an wet etching treatment to remove the reaction product after removing the mask layer;forming a source electrode and a drain electrode over the stacked film; andforming a third oxide semiconductor layer, a gate insulating film and a gate electrode over the stacked film, the source electrode and the drain electrode,wherein the gate insulating film is over the third oxide semiconductor layer, andwherein the gate electrode is over the gate insulating film.2. The method according to claim 1 , further comprising the step of:reducing the mask layer; andperforming a second dry etching treatment to perform half etching treatment on the stacked film after reducing the mask layer;3. The method ...

VEHICLE-BODY STRUCTURE OF AUTOMOTIVE VEHICLE

A vehicle-body structure of an automotive vehicle comprises a frame which is provided at a side portion of a vehicle body to extend in a vehicle longitudinal direction, and a load absorption portion which is provided at a front face of a tip portion of the frame to protrude forward, wherein the load absorption portion includes an inclination face portion which protrudes outward, in a vehicle width direction, relative to the frame and a tip face of which extends obliquely forward and inward. 1. A vehicle-body structure of an automotive vehicle , comprising:a frame provided at a side portion of a vehicle body to extend in a vehicle longitudinal direction; anda load absorption portion provided at a front face of a tip portion of the frame to protrude forward,wherein said load absorption portion includes an inclination face portion which protrudes outward, in a vehicle width direction, relative to said frame and a tip face of which extends obliquely forward and inward.2. The vehicle-body structure of the automotive vehicle of claim 1 , wherein said load absorption portion claim 1 , which protrudes forward relative to said tip portion of the frame claim 1 , is configured such that an edge thereof which is positioned at the front face of the tip portion of the frame extends substantially in the vehicle width direction or obliquely forward and outward.3. The vehicle-body structure of the automotive vehicle of claim 2 , wherein said load absorption portion comprises a tip-side member and a central-side member claim 2 , the tip-side member protruding outward relative to said tip portion of the frame and including said inclination face portion claim 2 , the central-side member being positioned on a central side claim 2 , in the vehicle longitudinal direction claim 2 , relative to said tip-side member claim 2 , provided to protrude outward relative to said frame claim 2 , and connected to said tip-side member so as to deform inward for load absorption in conjunction with ...

IMAGE PICKUP APPARATUS AND IMAGE PICKUP METHOD

Provided is an image pickup apparatus including an image pickup device, an AE control section, an image pickup control section that makes the image pickup device perform shooting, an EVF for image observation by looking thereinto, and an electronic display section, the electronic display section and the EVF alternatively displaying an image, wherein in exposure control, the AE control section sets a first exposure condition that is the same as an exposure condition for capturing image data for recording when the image is displayed on the electronic display section, and sets a second exposure condition that is different from the first exposure condition when the image is displayed on the EVF. 1. An image pickup apparatus comprising:an image pickup device;an AE control section that sets an exposure condition and performs exposure control;an image pickup control section that makes the image pickup device perform shooting and generate image data, according to the exposure control performed by the AE control section;an electronic display section for image observation from a distant position without looking thereinto; andan electronic viewfinder for image observation by looking thereinto, whereinthe electronic display section and the electronic viewfinder are configured so as to alternatively display an image relating to the image data, andin the exposure control, the AE control section sets a first exposure condition that is the same as an exposure condition for capturing image data for recording when the image is displayed on the electronic display section, and sets a second exposure condition that is different from the first exposure condition when the image is displayed on the electronic viewfinder.2. The image pickup apparatus according to claim 1 , wherein the second exposure condition is an exposure condition that enables provision of an image of a display mode that is closer to display on an optical finder relative to the first exposure condition.3. The image ...

DISPLAY DEVICE, MANUFACTURING METHOD OF DISPLAY DEVICE, AND ELECTRONIC DEVICE

A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate. 1. An electronic device comprising:a first adhesive layer over a first surface of a first base material;an element layer over the first adhesive layer;a second adhesive layer over the element layer;a second base material over the second adhesive layer; anda protective film provided at a second surface of the first base material,wherein the element layer comprises a transistor, a capacitor, and a touch sensor,wherein the protective film comprises any one of platinum, nickel, cobalt, manganese, and copper,wherein, in a plan view, a wiring for the touch sensor included in the touch sensor has a net-like shape and overlaps with a first wiring electrically connected to a gate electrode of the transistor as well as with a second wiring electrically connected to a source electrode or a drain electrode of the transistor.2. An electronic device comprising:a first layer over a first surface of a first substrate;a second layer over the first layer;an element layer between the first layer and the second layer; anda second substrate over the second layer,wherein the first substrate is provided with a protective film,wherein the first layer and the second layer have a same function,wherein the element ...

COMPOSITION FOR ORGANIC SEMICONDUCTOR INSULATING FILMS, AND ORGANIC SEMICONDUCTOR INSULATING FILM

The purpose of the invention is to provide: a composition for an organic semiconductor insulating film, which is capable of forming an insulating film that exhibits excellent hydrophobicity and smoothness of the surface, while having excellent electrical stability; and an organic semiconductor insulating film obtained by using the composition for an organic semiconductor insulating film. The present composition contains a polysiloxane and an organic polymer compound. The polysiloxane is a polyhedral silsesquioxane having an oxetanyl group and/or an oxetanyl group containing silicon compound represented by the following formula (1). In the formula (1), each of R-Rindependently represents a monovalent organic group (provided that at least one of R-Ris a monovalent organic group having an oxetanyl group); and each of v, w, x and y independently represents 0 or a positive number (provided that w and at least one of v, x and y are positive numbers). 2. The composition according to claim 1 , further comprising a curing catalyst.3. An organic semiconductor film produced by a method comprising: employing the composition according to into the organic semiconductor film.5. The composition according to claim 1 ,wherein the organic polymer (B) is at least one polymer selected from the group consisting of polyvinylphenol, polymethylmethacrylate, polyvinyl alcohol, and polyimide.6. The composition according to claim 1 ,wherein a content of the organic polymer (B) is in a range of from 10% to 90% by mass based on a total mass of the polysiloxane (A) and the organic polymer (B).7. The composition according to claim 2 ,wherein the curing catalyst is a photocationic polymerization initiator.8. The composition according to claim 7 ,wherein the photocationic polymerization initiator is at least one compound selected from the group consisting of an iodonium salt, a sulfonium salt, a diazonium salt, a selenium salt, a pyridinium salt, a ferrocenium salt, and a phosphonium salt.9. The ...

SIDE VEHICLE-BODY STRUCTURE OF AUTOMOTIVE VEHICLE

A reinforcement is configured to have a corner portion corresponding to a corner portion of a side sill inner. Herein, the corner portion of the reinforcement forms a reinforcement ridgeline extending in a vehicle longitudinal direction. The reinforcement is provided such that the reinforcement ridgeline and a side-sill-inner upper ridgeline formed at a corner portion of the side sill inner overlap with each other over a range from a specified area where a wheel outward displaced in a vehicle collision is capable of contacting a side sill to a connection portion where a cross member connects to the side sill inner. 1. A side vehicle-body structure of an automotive vehicle , in which a wheel is configured to be displaced outward relative to a side sill when a support member which supports the wheel at a vehicle body swings rearward in a vehicle collision , the side vehicle-body structure comprising:a side sill inner forming an inward-side member of the side sill, the side sill inner being configured to have a corner portion extending in a vehicle longitudinal direction which is formed by an upper side portion and a vertical side portion thereof, the corner portion of the side sill inner forming a side-sill-inner upper ridgeline extending in the vehicle longitudinal direction;a cross member provided to extend in the vehicle width direction and connecting to a portion of the side sill inner at an outward-side end thereof; anda reinforcement provided at an upper portion of an outward side face, in a vehicle width direction, of the side sill inner along the corner portion of the side sill inner,wherein said reinforcement is configured to have a corner portion corresponding to the corner portion of the side sill inner, the corner portion of the reinforcement forming a reinforcement ridgeline extending in the vehicle longitudinal direction, andsaid reinforcement is provided such that the reinforcement ridgeline formed at the corner portion of the reinforcement and the side ...

WELD BEAD SHAPING APPARATUS AND WELD BEAD SHAPING METHOD

A weld bead shaping apparatus including: a gouging torch for gouging an object to be shaped; a shape sensor for measuring a shape of the object; a slider apparatus and an articulated robot for driving the gouging torch and shape sensor; an image processing apparatus; and a robot controlling apparatus. The image processing apparatus includes: a shape data extracting unit extracting shape data of the object, from a measurement result obtained by the shape sensor; and a weld reinforcement shape extracting/removal depth calculating unit calculating a weld reinforcement shape of the weld bead from a difference between the shape data and a preset designated shape of the object, and calculating a removal depth by which gouging is performed, based on the weld reinforcement shape. The robot controlling apparatus controls the slider apparatus, the articulated robot, and the gouging torch based on the weld reinforcement shape and the removal depth. 1. A weld bead shaping apparatus comprising:a shape data extracting unit that extracts shape data of an object to be shaped on which a weld bead is formed, from a measurement result obtained by a shape sensor that measures a shape of the object to be shaped;a weld reinforcement shape extracting/removal depth calculating unit that calculates a weld reinforcement shape of the weld bead from a difference between the shape data and a preset designated shape of the object to be shaped, and calculates a removal depth by which gouging is performed using a gouging torch, on a basis of the weld reinforcement shape;a target position/torch posture calculating unit that calculates a target position and a posture of the gouging torch on a basis of the weld reinforcement shape and the removal depth;a gouging condition calculating unit that calculates a gouging condition on the basis of the weld reinforcement shape and the removal depth; anda driving apparatus that drives the gouging torch and the object to be shaped and a controlling apparatus ...

SEMICONDUCTOR DEVICE

A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm. 1. A semiconductor device comprising:an oxide semiconductor;an insulator; anda conductor,wherein the oxide semiconductor overlaps with the conductor with the insulator therebetween, andwherein the oxide semiconductor comprises a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.2. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises a region in which hydrogen concentration measured by secondary ion mass spectrometry is lower than 1×10atoms/cm.3. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises a region in which carbon concentration measured by secondary ion mass spectrometry is lower than 1×10atoms/cm.4. A semiconductor device comprising:an oxide semiconductor;a first conductor;a second conductor; andan insulator,wherein the oxide semiconductor overlaps with the first conductor with the insulator therebetween,wherein the oxide semiconductor is in contact with the second conductor, andwherein the oxide semiconductor comprises a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.5. The semiconductor device according to claim 4 , wherein the oxide semiconductor comprises a region in which hydrogen concentration measured ...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Provided is a transistor with high field-effect mobility, a transistor having stable electrical characteristics, a transistor having a low off-state current, or a semiconductor device including the transistor. A method for manufacturing a semiconductor device including a first conductor, a first insulator over the first conductor, a first semiconductor over the first insulator, a second semiconductor over the first semiconductor, a second conductor and a third conductor over the second semiconductor, a third semiconductor over the second semiconductor, the second conductor, and the third conductor, a second insulator over the third semiconductor, and a fourth conductor over the second insulator. In the method, formation of layers is performed without exposure to the air. 1. A method for manufacturing a semiconductor device , comprising:a first step of forming a first conductor over a substrate by a CVD method;a second step of processing the first conductor after the first step to form a second conductor;a third step of forming a first insulator over the second conductor after the second step by a CVD method;a fourth step of forming a first semiconductor over the first insulator after the third step by a CVD method;a fifth step of forming a second semiconductor over the first semiconductor after the fourth step by a CVD method;a sixth step of processing the second semiconductor after the fifth step to form a third semiconductor;a seventh step of processing the first semiconductor after the sixth step to form a fourth semiconductor;an eighth step of forming a third conductor over the third semiconductor after the seventh step by a CVD method;a ninth step of processing the third conductor after the eighth step to form a fourth conductor and a fifth conductor and expose the third semiconductor;a tenth step of forming a fifth semiconductor over the third semiconductor, the fourth conductor, and the fifth conductor after the ninth step by a CVD method;an eleventh step of ...

IMAGING DEVICE AND FLICKER DETERMINATION METHOD

An imaging device, comprising an image sensor, an imaging control circuit that controls an integration time of the image sensor, and a controller comprising a flicker component detection section that detects flicker components, and a flicker determination section that determines existence of flicker, wherein the flicker component detection section is provided with a plurality of detection regions in an imaging region of the image sensor along a scanning direction for an electronic shutter function, and detects flicker components from differences in brightness relating to the same detection region based on a plurality of imaging outputs that have been acquired by performing integrating at the same integration time with different frames, and the flicker determination section changes a determination value for determining the existence of flicker in accordance with an imaging mode, and performs determination by comparing the flicker component and the determination value. 1. An imaging device , comprising:an image sensor having a rolling shutter type electronic shutter function, and having a plurality of imaging modes;an imaging control circuit that instructs performing of an imaging operation to the image sensor at a specified period, and controls an integration time of the image sensor, anda controller comprising a flicker component detection section that detects flicker components based on imaging output of the image sensor, and a flicker determination section that determines existence of flicker based on the flicker components that have been detected,wherein,the flicker component detection section is provided with a plurality of detection regions in an imaging region of the image sensor along a scanning direction for the electronic shutter function, and acquires imaging outputs by performing integrating at the same integration time with different frames, and detects flicker components from differences in brightness relating to the same detection region based on the ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A transistor with favorable electrical characteristics is provided. A minute transistor is provided. Provided is a semiconductor device including a first insulator over a substrate, a second insulator over the first insulator, a semiconductor over the second insulator, a first conductor and a second conductor over the semiconductor, a third insulator over the semiconductor, a fourth insulator over the third insulator, a third conductor over the fourth insulator, and a fifth insulator over the first insulator, the first conductor, and the second conductor. In the semiconductor device, the second insulator and the third insulator each include at least one element other than oxygen included in the semiconductor, respectively, and the semiconductor includes a region having a carbon concentration of 3×10atoms/cmor lower. 1. A semiconductor device comprising:a first insulator over a substrate;a second insulator over the first insulator;a semiconductor over the second insulator;a first conductor and a second conductor over the semiconductor;a third insulator over the semiconductor;a fourth insulator over the third insulator;a third conductor over the fourth insulator; anda fifth insulator over the first insulator, the first conductor and the second conductor,wherein the second insulator and the third insulator each comprise at least one element other than oxygen included in the semiconductor, and{'sup': 18', '3, 'wherein the semiconductor comprises a region having a carbon concentration of 3×10atoms/cmor lower.'}2. The semiconductor device according to claim 1 , wherein the third insulator has a stacked structure comprising two or more layers.3. The semiconductor device according to claim 1 , wherein the first conductor claim 1 , the second conductor and the third conductor each have a stacked structure comprising two or more layers.4. The semiconductor device according to claim 1 , further comprising a fourth conductor between the substrate and the first insulator.5. The ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is formed over the substrate; a mask layer is formed over part of the stacked film and then dry etching treatment is performed, so that the stacked film is removed, with a region provided with the mask layer remaining, and a reaction product is formed on a side surface of the remaining stacked film; the reaction product is removed by wet etching treatment after removal of the mask layer; a source electrode and a drain electrode are formed over the stacked film; and a third oxide semiconductor layer, a gate insulating film, and a gate electrode are stacked and formed in this order over the stacked film, and the source electrode and the drain electrode. 1. A semiconductor device comprising:a substrate;a stacked film comprising a first oxide semiconductor layer and a second oxide semiconductor layer over the substrate;a source electrode and a drain electrode over the stacked film;a third oxide semiconductor layer over the stacked film, the source electrode and the drain electrode;a gate insulating film over the third oxide semiconductor layer; anda gate electrode over the gate insulating film,wherein an end portion of the stacked film comprises a step.2. The semiconductor device according to claim 1 ,wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer and the third oxide semiconductor layer comprises indium.3. The semiconductor device according to claim 1 ,wherein energy at a bottom of a conduction band of each of the first oxide semiconductor layer and the third oxide semiconductor layer is closer to a vacuum level than energy at a bottom of a conduction band of the second oxide semiconductor layer is by 0.07 eV or more and 1.3 eV or less.4. The semiconductor device according to claim 1 ,wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer and ...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon). 1. A semiconductor device comprising:a first insulating layer over a substrate;a first metal oxide layer over the first insulating layer;an oxide semiconductor layer over the first metal oxide layer;a second metal oxide layer over the oxide semiconductor layer;a gate insulating layer over the second metal oxide layer; anda gate electrode layer over the gate insulating layer,wherein the oxide semiconductor layer comprises a first region, a second region, and a third region,wherein the first region and the second region each comprise a region overlapping with the gate electrode layer,wherein the second region is between the first region and the third region,wherein the second region comprises a region with lower resistance than the first region,wherein the third region comprises a region with lower resistance than the second region,wherein the second region and the third region each comprise a region containing an element N, andwherein N is ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

A minute transistor is provided. A semiconductor device includes a semiconductor over a substrate, a first conductor and a second conductor over the semiconductor, a first insulator over the first conductor and the second conductor, a second insulator over the semiconductor, a third insulator over the second insulator, and a third conductor over the third insulator. The third insulator is in contact with a side surface of the first insulator. The semiconductor includes a first region where the semiconductor overlaps with a bottom surface of the first conductor, a second region where the semiconductor overlaps with a bottom surface of the second conductor, and a third region where the semiconductor overlaps with a bottom surface of the third conductor. The length between a top surface of the semiconductor and the bottom surface of the third conductor is longer than the length between the first region and the third region. 1. A semiconductor device comprising:a semiconductor over a substrate;a first conductor and a second conductor over the semiconductor;a first insulator over the first conductor and the second conductor;a second insulator over the semiconductor;a third insulator over the second insulator; anda third conductor over the third insulator,wherein the third insulator is in contact with a side surface of the first insulator,wherein the semiconductor includes a first region where the semiconductor overlaps with a bottom surface of the first conductor, a second region where the semiconductor overlaps with a bottom surface of the second conductor, and a third region where the semiconductor overlaps with a bottom surface of the third conductor, andwherein a distance between a top surface of the semiconductor and the bottom surface of the third conductor is longer than a distance between the first region and the third region.2. The semiconductor device according to claim 1 , wherein the semiconductor is an oxide semiconductor.3. The semiconductor device ...

IMAGE PROVIDING APPARATUS, IMAGE DISPLAY DEVICE, IMAGING SYSTEM, IMAGE DISPLAY SYSTEM, AND IMAGE PROVIDING METHOD

An image providing apparatus includes: a plurality of auxiliary imaging units that have shooting ranges partially overlapping one another, and each of which images a subject to generate auxiliary image data; a provider communication unit; a provider communication control unit that receives, from the portable device, via the provider communication unit, transmission request information requesting the image providing apparatus to transmit composite image data; and an image synthesizing unit that generates, based on the transmission request information, composite image data by combining the auxiliary image data respectively generated by two or more of the plurality of auxiliary imaging units. The provider communication control unit transmits, via the provider communication unit, the composite image data to the portable device. 1. An image providing apparatus that provides image data to a portable device carried by a user , the image providing apparatus comprising:a plurality of auxiliary imaging units that have shooting ranges partially overlapping one another, and each of which images a subject to generate auxiliary image data;a provider communication unit that performs communication with the portable device;a provider communication control unit that receives, from the portable device, via the provider communication unit, transmission request information requesting the image providing apparatus to transmit composite image data; andan image synthesizing unit that generates, based on the transmission request information received from the portable device via the provider communication unit, composite image data by combining the auxiliary image data respectively generated by two or more of the plurality of auxiliary imaging units, whereinthe provider communication control unit transmits, via the provider communication unit, the composite image data to the portable device.2. The image providing apparatus according to claim 1 , further comprising a shooting range ...

IMAGING DEVICE, FLASH CONTROL DEVICE, AND LIGHT EMISSION CONTROL METHOD

An imaging device connectable via a connector to a flash control device which is connectable via the connecting section and which has a memory storing information on whether or not to incorporate a flash function, the imaging device comprising: a controller which communicates with the flash control device connected to the connector, and controls the flash control device, wherein the controller communicates with the flash control device to determine the information, and switches control of the flash control device according to a determination result. 1. An imaging device connectable via a connector to a flash control device which is connectable via the connector and which has a memory storing information on whether or not to incorporate a flash function , the imaging device comprising:a controller which communicates with the flash control device connected to the connector, and controls the flash control device, whereinthe controller communicates with the flash control device to determine the information, and switches control of the flash control device according to a determination result.2. The imaging device according to claim 1 , whereinthe controller, in a case of having determined that the flash function is not incorporated on the basis of the information, when communicating with the flash control device connected to the connector to control the flash control device, performs communication in a manner excluding second information on a control range of an amount of flash light emission3. The imaging device according to claim 1 , whereinthe flash control device performs wireless communication with a flash device to control the flash device.4. The imaging device according to claim 2 , whereinthe controller, in a case of having determined that the flash function is not incorporated on the basis of the information, when performing dimming control by pre-emission of a flash, performs the control by communicating with the flash control device to limit the number of ...

CONTROL SYSTEM FOR VEHICLE

A control system for a vehicle includes: a battery; a first control unit configured to receive a power supplied from the battery, and configured to control a first control object which is mounted on the vehicle; and an interrupting unit configured to interrupt a supply of the power to the first control unit from the battery, wherein a first switch part is provided between the battery and the first control unit which receives a resumption request signal when the supply of the power to the first control unit is interrupted by the interrupting unit to permit the power to be supplied to the first control unit from the battery. 1. A control system for a vehicle including:a battery;a first control unit configured to receive a power supplied from the battery, and configured to control a first control object which is mounted on the vehicle; andan interrupting unit configured to interrupt a supply of the power to the first control unit from the battery, whereina first switch part is provided between the battery and the first control unit which receives a resumption request signal when the supply of the power to the first control unit is interrupted by the interrupting unit to permit the power to be supplied to the first control unit from the battery.2. The control system for a vehicle according to claim 1 , wherein:the interrupting unit includes a vehicle state determining unit configured to determine a state of the vehicle; andthe interrupting unit outputs an interrupting signal to the first switch part to interrupt the supply of the power to the first control unit from the battery or outputs the resumption request signal to the first switch part to permit the power to be supplied, in accordance with the state of the vehicle.3. The control system for a vehicle according to claim 2 , whereinthe vehicle state determining unit is a microcomputer provided in a constant power supply control unit to which the power is constantly supplied.4. The control system for a vehicle ...

DISPLAY DEVICE, MANUFACTURING METHOD OF DISPLAY DEVICE, AND ELECTRONIC DEVICE

A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate. 1. A display device comprising:a first substrate; anda second substrate,wherein a first surface of the first substrate is provided with a first insulating layer,wherein a first surface of the second substrate is provided with a second insulating layer,wherein the first surface of the first substrate and the first surface of the second substrate face each other,wherein the first substrate has a second surface opposite to the first surface,wherein the second substrate has a second surface opposite to the first surface,wherein an adhesive layer is positioned between the first insulating layer and the second insulating layer, andwherein, in the vicinity of a peripheral portion of the first substrate and the second substrate, a protective film covers the first surface, a side surface and the second surface of the first substrate, a side surface of the adhesive layer, and the first surface of the second substrate, and does not cover a side surface of the second substrate.2. The display device according to claim 1 ,wherein the protective film is in contact with the side surface of the first substrate and is not in contact with the side surface of the second substrate.3. The display device ...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon). 1. A semiconductor device comprising:a first insulating layer over a substrate;a first metal oxide layer over the first insulating layer;an oxide semiconductor layer over the first metal oxide layer;a second metal oxide layer over the oxide semiconductor layer;a gate insulating layer over the second metal oxide layer; anda gate electrode layer over the gate insulating layer,wherein the oxide semiconductor layer comprises a first region, a second region, and a third region,wherein the first region and the second region each comprise a region overlapping with the gate electrode layer,wherein the second region is between the first region and the third region,wherein the second region comprises a region with lower resistance than the first region,wherein the third region comprises a region with lower resistance than the second region,wherein the second region and the third region each comprise a region containing an element N, andwherein N is ...

EXPOSURE CONTROL APPARATUS AND EXPOSURE CONTROL METHOD

An exposure control apparatus comprising: a local motion detection section which detects a local motion in a screen; a brightness detection section which detects a subject brightness; a local motion brightness determination setting section which sets a local motion brightness determination value for a local motion; and an exposure adjustment section which, when the local motion detection section has detected a motion corresponding to or exceeding a predetermined value, subsequently performs exposure control until the local motion brightness determination value is reached and, when the exposure has come closer to an appropriate exposure than the local motion brightness determination value, adjusts the exposure to a predetermined exposure value which is different from the appropriate exposure. 1. An exposure control apparatus comprising:a local motion detection section which detects a local motion in a screen;a brightness detection section which detects a subject brightness;a local motion brightness determination setting section which sets a local motion brightness determination value for a local motion; andan exposure adjustment section which, when the local motion detection section has detected a motion corresponding to or exceeding a predetermined value, subsequently performs exposure control until the local motion brightness determination value is reached and, when the exposure has come closer to an appropriate exposure than the local motion brightness determination value, adjusts the exposure to a predetermined exposure value which is different from the appropriate exposure.2. The exposure control apparatus according to claim 1 , further comprising:an overall motion detection section which detects an overall motion in a screen; andan overall motion brightness determination setting section which sets an overall motion brightness determination value with regard to detection of an overall motion, wherein when the overall motion detection section has detected a ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

A minute transistor is provided. A semiconductor device includes a semiconductor over a substrate, a first conductor and a second conductor over the semiconductor, a first insulator over the first conductor and the second conductor, a second insulator over the semiconductor, a third insulator over the second insulator, and a third conductor over the third insulator. The third insulator is in contact with a side surface of the first insulator. The semiconductor includes a first region where the semiconductor overlaps with a bottom surface of the first conductor, a second region where the semiconductor overlaps with a bottom surface of the second conductor, and a third region where the semiconductor overlaps with a bottom surface of the third conductor. The length between a top surface of the semiconductor and the bottom surface of the third conductor is longer than the length between the first region and the third region. 1. (canceled)2. A transistor comprising:a first insulator; anda first conductor,wherein an angle between a side surface of the first insulator and a top surface of the first conductor is greater than 0° and less than 90°.3. A transistor comprising:a first insulator;a second insulator; anda first conductor,wherein an angle between a side surface of the first insulator and a top surface of the first conductor is greater than 0° and less than 90°, andwherein the second insulator is formed on the side surface of the first insulator.4. A transistor comprising:a first insulator;a second insulator;a third insulator;a first conductor; anda second conductorwherein an angle between a side surface of the first insulator and a top surface of the first conductor is greater than 0° and less than 90°,wherein the second insulator is formed on the side surface of the first insulator, andwherein the second insulator is formed thinner in a region overlapping with a side surface of the second conductor with the third insulator interposed therebetween than in a region ...

SEMICONDUCTOR DEVICE

A high-performance semiconductor device is provided. The semiconductor device includes a transistor, an insulating film over the transistor, an electrode, and a metal oxide over the insulating film. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide over the first gate insulating film, a source electrode and a drain electrode electrically connected to the oxide, a second gate insulating film over the oxide, and a second gate electrode over the second gate insulating film. The electrode includes a region in contact with the insulating film. The first gate insulating film is in contact with the insulating film. The thicknesses of the insulating film over the second gate electrode, the insulating film over the source electrode, and the insulating film over the drain electrode are substantially the same, and the insulating film includes excess oxygen. 1. A semiconductor device comprising:a transistor;an insulating film over the transistor;an electrode; anda metal oxide over the insulating film, a first gate electrode;', 'a first gate insulating film over the first gate electrode;', 'an oxide over the first gate insulating film;', 'a source electrode and a drain electrode electrically connected to the oxide;', 'a second gate insulating film over the oxide; and', 'a second gate electrode over the second gate insulating film,, 'wherein the transistor compriseswherein the electrode reaches the source electrode or the drain electrode through the metal oxide and the insulating film,wherein the electrode comprises a region in contact with the insulating film,wherein the first gate insulating film is in contact with the insulating film,wherein the insulating film comprises a first region overlapping the second gate electrode, a second region overlapping the source electrode, and a third region overlapping the drain electrode,wherein thickness of the first region, thickness of the second region and thickness of ...

POWER TRAIN SUPPORT STRUCTURE FOR VEHICLE

A power train support structure includes a first front side frame disposed on one of left and right sides of a power train; a second front side frame disposed on the other of the left and right sides of the power train, and being greatly away from the power train with respect to the first front side frame; a mounting bracket having one of left and right ends connected to the power train; and a connecting member for connecting the mounting bracket and the second front side frame. The mounting bracket includes a front fixing portion and a rear fixing portion to be fixed to the power train. A strength of the front fixing portion and the rear fixing portion is set to such a strength that the rear fixing portion is broken by a collision load from a front side, and the front fixing portion is not broken. 1. A power train support structure for a vehicle , the structure being configured to support a power train disposed to be offset to one of left and right sides within an accommodation room formed in a vehicle front portion , comprising:a first front side frame disposed on one of left and right sides of the power train;a second front side frame disposed on the other of the left and right sides of the power train, the second front side frame being greatly away from the power train with respect to the first front side frame;a mounting bracket extending in a left-right direction between the second front side frame and the power train, one of left and right ends of the mounting bracket being connected to the power train; anda connecting member for connecting the other of the left and right ends of the mounting bracket and the second front side frame, whereinthe mounting bracket includes a front fixing portion to be fixed to the power train, and a rear fixing portion to be fixed to the power train on a rear side with respect to the front fixing portion, andwhen a collision load from a front side acts on the power train, a strength of each of the front fixing portion and the ...

デイスプレイ・タブレツトの入力方式

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Developing device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Pressure sensitive adhesive composition

Address-over detection system of memory unit

Adhesion between ceramics and rubber

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Low-noise device of rotary plate

Method of manufacturing a semiconductor device

TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.

Production apparatus and method of producing a light-emitting device by using the same apparatus

The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.

Method of manufacturing light emitting device

A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

Method of manufacturing a semiconductor device

A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape.

Display device having driver TFTs and pixel TFTs formed on the same substrate

TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.

Semiconductor device including a conductive film having a tapered shape

TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.

Production apparatus and method of producing a light-emitting device by using the same apparatus

The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.

Production apparatus and method of producing a light-emitting device by using the same apparatus

The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.

Production apparatus and method of producing a light-emitting device by using the same apparatus

The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.

Pressure-sensitive tapes or sheets and their manufacture

System and method for managing receive data of edi system

(57)【要約】 【課題】 各送信者独自のデータフォーマットとＣＩＩ 標準フォーマットとによるデータを共存させて使用する ためのＥＤＩシステムにおける受信データの管理方式を 提供する。 【解決手段】 ＥＤＩサーバは、データ受信部１２が受 信し格納した集信ファイル１０のファイル名を分析する ことによって、送られてくるデータのフォーマットを判 別するデータフォーマット判別部１４と、データがＣＩ Ｉ標準フォーマットに準拠している場合、指定された仕 分情報に基づき集信ファイル１０を区分単位に仕分け し、ＣＩＩ標準フォーマットに準拠していない場合は、 データをそのまま格納し、その後データ変換部２２によ りフォーマット変換されたデータにより配信ファイル２ ４を作成するデータ格納管理部１８と、データ送受信先 の正当性をチェックするセキュリティチェック部２０と を有する。

Low-noise cutter

V-belt

V-BELT Abstract of the Disclosure A power transmission belt having a length and a lateral extent. The belt consists of a tension layer and a compression layer with the compression layer defined at least partially by acrylonitrile-butadiene copolymer rubber (hydrogenated nitrite rubber), having at least an 80% hydrogen addition rate, and a plurality of sub-stantially laterally oriented fibers in the acrylo-nitrile -butadiene copolymer rubber in the compression layer. The fibers are treated with one of resorcin-for-malin-nitrile rubber latex (RFL) and resorcin-formalin-hydrogenated nitrile rubber latex (RFL) having at least an 80% hydrogen addition rate.

Joint of wear-resistant conveyor belt

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Pressure-sensitive adhesive composition

Sheet gripper for a sheet feeder in a sheet-fed press

A sheet gripper for a sheet feeder of a sheet-fed press has a number of super-abrasive grains (4) attached to a sheet contact portion (3) of the sheet gripper. <IMAGE>

V-belt

V-BELT Abstract of the Disclosure A power transmission belt having a length and a lateral extent. The belt consists of a tension layer and a compression layer with the compression layer defined at least partially by acrylonitrile-butadiene copolymer rubber (hydrogenated nitrite rubber), having at least an 80% hydrogen addition rate, and a plurality of sub-stantially laterally oriented fibers in the acrylo-nitrile -butadiene copolymer rubber in the compression layer. The fibers are treated with one of resorcin-for-malin-nitrile rubber latex (RFL) and resorcin-formalin-hydrogenated nitrile rubber latex (RFL) having at least an 80% hydrogen addition rate.

Display tablet system

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Preform conveyor

Eine Vorformlingsfördervorrichtung hat eine Düse (10) und mindestens zwei Vorformlingsexpansionswalzen (20), die unter der Düse angeordnet sind und eine konische Form haben. Die Düse extrudiert einen Vorformling (2) mit der Form eines einzelnen Blattes oder einer Vielzahl von Blättern in einer Bogenform in Richtung eines Raumes unterhalb der Düse. Die Vorformlingsexpansionswalzen sind angeordnet, gegen die Nähe von entsprechenden Seitenendabschnitten des bogenförmigen Vorformlings, in der Form eines einzelnen Blattes oder der Vielzahl von Blättern als Ergebnis des Schneidens, anzuliegen. Die Vorformlingsexpansionswalzen sind konfiguriert, in einer Richtung entgegengesetzt zu einer Abfließrichtung des Vorformlings gedreht zu werden, um den Seitenendabschnitt des Vorformlings zu recken, so dass sich eine Breite des Seitenendabschnittes ausdehnt und sich eine Form des Vorformlings von der Bogenform in eine flache Plattenform ändert.

Method of manufacturing light-emitting device

【課題】低コストかつ簡便な方法でスループットの高い発光装置の作製方法を提供する。 【解決手段】減圧下で発光性材料を含む溶液を陽極もしくは陰極に向けて噴射し、前記溶液が前記陽極もしくは陰極に到達するまでの間、該溶液中の溶媒を揮発させると共に、残存した前記発光性材料を前記陽極もしくは陰極上に堆積させて発光層を形成する発光装置の作製方法である。当該構成により溶液を塗布した後に薄膜化のための焼成工程を必要としないため、低コストかつ簡便な方法でありながら、スループットの高い作製方法を提供することができる。 【選択図】図１

Display device, manufacturing method of display device, and electronic device

A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.

Transportation system and transportation method of granular body material

【課題】複数の捕集器にそれぞれ接続される輸送元からの材料輸送管の構成が異なるような場合等にも、単一の空気吸引源によって粉粒体材料を効率的に空気輸送し得る粉粒体材料の輸送システム及び粉粒体材料の輸送方法を提供する。 【解決手段】粉粒体材料の輸送システム１は、空気輸送される粉粒体材料をそれぞれに捕集し、それぞれの供給先７，９に供給する複数の捕集器１０，２０と、これら捕集器に接続された吸引管３９ａ，３９ｂを切替えて空気吸引源３２に連通させ、輸送元３，５からの粉粒体材料を連通させた吸引管が接続された捕集器に空気輸送する空気輸送手段３０と、前記複数の捕集器のそれぞれに空気輸送する際に駆動される前記空気吸引源の駆動モーター３３の回転数を、これら捕集器毎に変更可能とした回転数変更手段４２，４４と、前記複数の捕集器のそれぞれに空気輸送する際に前記回転数変更手段によって変更された前記捕集器毎の回転数で前記駆動モーターを駆動させる制御部４１と、を備えている。 【選択図】図１

Image pickup apparatus and image pickup method

Provided is an image pickup apparatus including an image pickup device, an AE control section, an image pickup control section that makes the image pickup device perform shooting, an EVF for image observation by looking thereinto, and an electronic display section, the electronic display section and the EVF alternatively displaying an image, wherein in exposure control, the AE control section sets a first exposure condition that is the same as an exposure condition for capturing image data for recording when the image is displayed on the electronic display section, and sets a second exposure condition that is different from the first exposure condition when the image is displayed on the EVF.

Side vehicle-body structure of vehicle

There are provided a hinge pillar comprising an outer panel and an inner panel which form a closed cross section extending vertically, a hinge pillar reinforcement provided in the closed cross section, a front door attached to the hinge pillar via a pair of upper-and-lower door hinges, and a hinge bracket attaching the lower door hinge to the hinge pillar reinforcement, the hinge bracket being provided to face a front wheel in a longitudinal direction. Herein, the hinge bracket has a lower strength than a portion of the hinge pillar reinforcement where the hinge bracket is provided. Accordingly, when receiving a collision load from the front wheel, the hinge bracket changes a contact portion of the front wheel to the hinge pillar so as to guide the retreating front wheel outward in a vehicle width direction.

Electric vehicle

【課題】車体前方から衝撃荷重が作用するときにモータを制御する制御装置の損傷を抑制すると共にダッシュパネルの車体後側への移動を抑制する。【解決手段】車輪を駆動させるモータ１０が車両前方のモータルーム２内に配置された電動車両は、モータルーム２の上部に配設されてモータ１０を制御する制御装置３０と、制御装置３０の後方に配設される冷却サブタンク４０とを備える。制御装置３０は、車体後側が車体前側に比して下方に傾斜して配置され、冷却サブタンク４０は、車体前側の下面４１ａが制御装置３０の上面３４ｆに車体前後方向に対向して車体前側から車体後側に向かうにつれて下方に傾斜するように形成されている。【選択図】図４

Voice input japanese processing system

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Device substrate, light emitting device and driving method of light emitting device

A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.

Percentage operation system

Side vehicle body structure of a vehicle and method of absorbing an overlap collision

Es werden eine Gelenksäule 10, welche ein äußeres Blech 11 und ein inneres Blech 12 umfasst, welche einen geschlossenen Querschnitt C bilden, welcher sich vertikal erstreckt, eine Gelenksäulenverstärkung 13, welche in dem geschlossenen Querschnitt vorgesehen ist, eine Vordertür, welche an der Gelenksäule 10 über ein Paar von oberen und unteren Türgelenken 8a, 8b festgelegt ist, und ein Gelenkträger 15 zur Verfügung gestellt, welcher das untere Türgelenk 8b an der Gelenksäulenverstärkung festlegt, wobei der Gelenkträger vorgesehen ist, um zu einem Vorderrad 9 in einer Längsrichtung gerichtet zu sein. Hierin weist der Gelenkträger eine geringere Festigkeit als ein Abschnitt der Gelenksäulenverstärkung auf, wo der Gelenkträger vorgesehen ist. Demgemäß ändert, wenn er eine Kollisionslast von dem Vorderrad empfängt, der Gelenkträger einen Kontaktabschnitt des Vorderrads mit der Gelenksäule derart, um das zurückweichende Vorderrad nach außen in einer Fahrzeugbreitenrichtung zu führen. There are a hinge pillar 10, which comprises an outer plate 11 and an inner plate 12, which form a closed cross-section C, which extends vertically, a joint column reinforcement 13, which is provided in the closed cross-section, a front door, which at the hinge pillar 10th via a pair of upper and lower door joints 8a, 8b, and a hinge bracket 15 is provided which fixes the lower door hinge 8b to the hinge pillar reinforcement, the hinge bracket being provided to face a front wheel 9 in a longitudinal direction. Herein, the hinge bracket has lower strength than a portion of the hinge pillar reinforcement where the hinge bracket is provided. Accordingly, when receiving a collision load from the front wheel, the joint bracket changes a contact portion of the front wheel with the hinge pillar so as to guide the receding front wheel outward in a vehicle width direction.

Semiconductor device

【課題】微細なトランジスタを提供する。【解決手段】基板上の半導体と、半導体上の第１の導電体及び第２の導電体と、第１の導電体及び第２の導電体上の第１の絶縁体と、半導体上の第２の絶縁体と、第２の絶縁体上の第３の絶縁体と、第３の絶縁体上の第３の導電体と、を有し、第３の絶縁体は第１の絶縁体の側面と接し、半導体は、半導体と、第１の導電体の底面と、が重なる第１の領域を有し、半導体と、第２の導電体の底面と、が重なる第２の領域を有し、半導体と、第３の導電体の底面と、が重なる第３の領域を有し、半導体の上面と第３の導電体の底面との間の長さは、第１の領域と第３の領域との間の長さよりも、大きい半導体装置である。【選択図】図１

Control device and control method for internal combustion engine

Steuervorrichtung für eine Brennkraftmaschine, die einen variablen Ventilcharakteristikmechanismus (38), der eine Ventilcharakteristik ändert, die zumindest eines von einer Dauer und einem maximalen Hub eines Einlassventils (25) umfasst; eine Ventilcharakteristiksteuereinrichtung zum Erfassen einer Betriebsposition des variablen Ventilcharakteristikmechanismus (38) und zum Steuern des variablen Ventilcharakteristikmechanismus (38), so dass ein Wert der Ventilcharakteristik entsprechend der Betriebsposition gleich einem Sollwert der Ventilcharakteristik entsprechend einem Verbrennungsmotorbetriebszustand ist; und eine Lerneinrichtung aufweist zum Ändern des Sollwerts der Ventilcharakteristik, so dass das Einlassventil (25) sich gemäß einem spezifischen Wert der Ventilcharakteristik öffnet und schließt, und zum Lernen als Referenzposition für eine Steuerung der Ventilcharakteristik der Betriebsposition des variablen Ventilcharakteristikmechanismus (38), nachdem der Sollwert der Ventilcharakteristik geändert wird; gekennzeichnet durch: eine Einlassluftmengensteuereinrichtung zum Steuern einer Einlassluftmengeneinstelleinrichtung, die stromaufwärts von dem Einlassventil (25) vorgesehen ist, so dass die Einlassluftmengeneinstelleinrichtung eine Änderung einer Menge von Einlassluft, die verursacht wird, wenn die Lerneinrichtung den Sollwert der Ventilcharakteristik ändert, ausgleicht, wobei die Einlassluftmengeneinstelleinrichtung ein Drosselventil (15) ist, das stromaufwärts von einem Ausgleichstank (16) angeordnet ist; die Lerneinrichtung graduell den Sollwert der Ventilcharakteristik ändert, so dass das Einlassventil (25) sich gemäß dem spezifischen Wert der Ventilcharakteristik öffnet und schließt; die Einlassluftmengensteuereinrichtung graduell einen Sollöffnungsbetrag des Drosselventils (15) gemäß der Änderung des Sollwerts der Ventilcharakteristik ändert, die durch die Lerneinrichtung verursacht wird, und die Einlassluftmengensteuereinrichtung graduell den Sollö ...

Process for bleaching pulps

A novel process for bleaching pulps with a bleaching solution, containing peroxide, which comprises use of, as an additional component of the bleaching solution, an activator which liberates nascent oxygen upon reaction with the peroxide, such as, tetraacetylethylenediamine and so on. The inventive method permits economization of the bleaching agent used, reduction of the bleaching time and a lowering of the bleaching temperature.

"blast furnace bottom section disassembly method"

Data arranging circuit

Semiconductor device and method of manufacturing the same

The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the semiconductor film containing a rare gas element by a heat treatment. Furthermore, a first impurity region and a second impurity region formed in a semiconductor layer of a first n-channel TFT are provided outside a gate electrode. A third impurity region formed in a semiconductor layer of a second n-channel TFT is provided so as to be partially overlapped with a gate electrode. A third impurity region is provided outside a gate electrode. A fourth impurity region formed in a semiconductor layer of a p-channel TFT is provided so as to be partially overlapped with a gate electrode. A fifth impurity region is provided outside a gate electrode.

Drive belt.

Production apparatus and method of producing a light-emitting device by using the same apparatus

Speech system

(57)【要約】 【課題】 コンピュータネットワークを利用した通話シ ステムにおいて、コンピュータネットワークの混雑や品 質不良のため、データの遅延や欠損が頻発に発生する場 合に、良好な音声品質を確保できるようにする。 【解決手段】 端末間で通話中に、音声データ制御手段 ２０３が、送信する音声データの内、あらかじめ、端末 間で取り決めておいた時間長の音声データを一部二重化 し、送信する機能を備える。これにより、音声データ欠 損時の、欠損による影響を低減させ、原音声に近い音声 データを復元させることが出来る。

Method of bonding a hydrogenated nitrile rubber composition with fibers and articles

The present invention is directed to a method wherein fibers are treated with a first, second, and third treatment solution. The third treatment solution includes a chlorinated rubber and a rubber-containing composition having acrylonitrile-butadiene rubber or hydrogenated acrylonitrile-butadiene rubber. The treated fibers are positioned contiguous, and adhered, to an unvulcanized hydrogenated acrylonitrile-butadiene rubber composition which is then vulcanized. The resulting rubber-fiber composite exhibits improved adhesion between the hydrogenated acrylonitrile-butadiene rubber composition and the fibers. Adhesion is maintained in a hot environment even if subjected to what would conventionally be considered conditions that would result in thermal deterioration under high temperature. Thus, the rubber-fiber composite exhibits enhanced durability under the severe service conditions experienced by rubber-fiber composites.

Method of manufacturing light emitting device

A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

Diamond cutter

Vehicle control system

A controller detects partitioning lines OL and BL of a road and a road edge E based on an image taken by a camera, generates a pair of left and right virtual lines IL L and IL R that extend from the side to the front of a vehicle along the partitioning lines OL and BL, controls the steering so the vehicle travels between the left and right virtual lines IL L and IL R , moves the left virtual line IL L to a position in proximity to the road edge E and fixes the left virtual line IL L to this position, and then, moves the right virtual line IL R to a position separated from the left virtual line IL L by the width of the vehicle and fixes the right virtual line IL R to this position, and controls brakes to stop the vehicle after fixing the left and right virtual lines IL L and IL R .

Developing device in image forming device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

vehicle control system

【課題】システム誤作動時、ドライバを含む乗員が直感的に自動停車制御をキャンセルすることができる車両制御システムを提供する。【解決手段】車両制御システム１００は、ドライバの異常が判定された場合に、車両１を緊急で自動的に停車させるための自動停車制御を行う自動停車制御モジュールＶＣＭ７３と、ハザードスイッチ３６の操作に基づいて灯火器４９をハザード点滅または消灯させるハザード制御モジュールＣＢＣＭ７２とを備え、ＶＣＭ７３は、自動停車制御が実行されている間、ＣＢＣＭ７２に灯火器４９をハザード点滅させる信号を送信し、ＶＣＭ７３は、自動停車制御が実行されている間にハザードスイッチ３６が操作されたとき、ＣＢＣＭ７２に灯火器４９をハザード点滅させる信号の送信を停止させる信号を送信すると共に、ＶＣＭ７３による自動停車制御を停止する。【選択図】図３

Semiconductor device and manufacturing method thereof

A transistor with favorable electrical characteristics is provided. A minute transistor is provided. Provided is a semiconductor device including a first insulator over a substrate, a second insulator over the first insulator, a semiconductor over the second insulator, a first conductor and a second conductor over the semiconductor, a third insulator over the semiconductor, a fourth insulator over the third insulator, a third conductor over the fourth insulator, and a fifth insulator over the first insulator, the first conductor, and the second conductor. In the semiconductor device, the second insulator and the third insulator each include at least one element other than oxygen included in the semiconductor, respectively, and the semiconductor includes a region having a carbon concentration of 3×10 18 atoms/cm 3 or lower.

Sound multiplex signal reproducing device

Semiconductor device and method of manufacturing the same

The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the semiconductor film containing a rare gas element by a heat treatment. Furthermore, a first impurity region and a second impurity region formed in a semiconductor layer of a first n-channel TFT are provided outside a gate electrode. A third impurity region formed in a semiconductor layer of a second n-channel TFT is provided so as to be partially overlapped with a gate electrode. A third impurity region is provided outside a gate electrode. A fourth impurity region formed in a semiconductor layer of a p-channel TFT is provided so as to be partially overlapped with a gate electrode. A fifth impurity region is provided outside a gate electrode.

Method of manufacturing light emitting device

A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

Method of manufacturing light emitting device

A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

A side vehicle body structure for a motor vehicle and a method of absorbing an overlapping collision of a vehicle

Eine Verstärkung 73 ist konfiguriert, um einen Eckabschnitt entsprechend einem Eckabschnitt eines Seitenschweller-Innenteils 70 aufzuweisen. Hierin bildet der Eckabschnitt der Verstärkung 73 eine Verstärkungskantenlinie X1, welche sich in einer Fahrzeuglängsrichtung erstreckt. Die Verstärkung 73 ist derart vorgesehen, dass die Verstärkungskantenlinie X1 und eine obere Kantenlinie X2 des Seitenschweller-Innenteils, welche an einem Eckabschnitt des Seitenschweller-Innenteils 70 ausgebildet ist, miteinander über einen Bereich von einer bestimmten Fläche á, wo ein Rad, welches nach auswärts in einer Fahrzeugkollision verlagert wird, zu einem Kontaktieren eines Seitenschwellers 5 fähig ist, bis zu einem Verbindungsabschnitt â überlappen, wo ein Querglied an das Seitenschweller-Innenteil anschließt. A reinforcement 73 is configured to have a corner portion corresponding to a corner portion of a side sill inner panel 70. Here, the corner portion of the reinforcement 73 forms a reinforcing edge line X1 extending in a vehicle longitudinal direction. The reinforcement 73 is provided such that the reinforcing edge line X1 and an upper edge line X2 of the side sill inner member formed at a corner portion of the side sill inner member 70 are overlapped with each other over a range of a certain area á where a wheel extends outward is displaced in a vehicle collision, capable of contacting a side sill 5, overlapping to a connecting portion â, where a cross member adjoins the side sill inner member.