02-02-2011 дата публикации
Номер: CN0101962752A
Автор:
WEIMIN SHI,
WENJUN WU,
LEI NIE,
JIELI CHEN,
XIAOLI ZHANG,
SHENG LIU,
LEI MA,
FANFENG YU,
ZHE HU,
LU HUANG,
JIE SUN,
ZHENYI CHEN,
JIE ZHOU,
SHI WEIMIN,
WU WENJUN,
NIE LEI,
CHEN JIELI,
ZHANG XIAOLI,
LIU SHENG,
MA LEI,
YU FANFENG,
HU ZHE,
HUANG LU,
SUN JIE,
CHEN ZHENYI,
ZHOU JIE
Принадлежит:
The invention relates to a method for preparing a ZnS/SnS double-layer film for a solar cell by vacuum evaporation, and belongs to the technical field of preparation processes for inorganic film elements of solar cells. A P semiconductor SnS is used as an absorption layer, a vacuum evaporation system is used, and a mode for continuously evaporating ZnS and SnS films in separate boats to obtain the double-layer film is adopted. In the method, a sample holder is adjusted, the temperature of an ITO glass substrate is controlled at 150 to 160 DEG C, the vacuum pressure is 2-3*10<-3>Pa, the distance between the substrate and an evaporation source molybdenum boat is about 20 centimeters, and the evaporation temperature of SnS and ZnS is controlled at 1,000 to 1,200 DEG C; and after the evaporation process is finished, annealing is performed in a vacuum tubular annealing furnace, and the temperatures of annealing are selected at 300 DEG C, 400 DEG C and 500 DEG C respectively. The method has the ...
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