Oscillator circuit

The invention is suitable for the technical field of transistor oscillators, and provides an oscillator circuit which comprises a grid bias circuit, a drain bias circuit and a feedback circuit. The grid bias circuit provides low-ripple grid voltage for an active device of the feedback circuit; the drain bias circuit provides low-ripple drain voltage for an active device of the feedback circuit; the feedback circuit comprises an active device, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, a sixth capacitor, a first inductor, a second inductor, a phase inductor, a first diode and a load, wherein the active device is a common-source gallium nitride high electron mobility transistor. According to the oscillator, high-frequency, high-power and high-efficiency signal output is realized, and the sweep frequency range of the oscillator is also improved.

Pyroelectric infrared detector for planarization thermal isolation structure and method for making same

The invention discloses a pyroelectric infrared detector provided with a planarized heat-insulated structure and a preparation method thereof. The pyroelectric infrared detector comprises a substrate and the heat-insulated structure, wherein the heat-insulated structure is as follows: a deep notch of a corresponding figure of a lower electrode of a detector is etched on the silicon or sapphire substrate; a porous silicon dioxide layer is deposited inside the deep notch; and silicon dioxide layers or silicon nitride layers are deposited on the porous silicon dioxide layer and the substrate. The detector is easy to be integrated with other devices by means of single scale intergration, is favorable for high-density integration of detector units, has simple manufacturing technique and low processing cost, simultaneously greatly reduces the vertical height difference of steps of a mesa device structure, is easy to interconnect metals, reduces the difficulty of the processing technique of devices ...

Single-slice integrated micro-lens and its production method

The invention discloses a single-element integrated microlens, which comprises a substrate and a microlens, and is characterized in that the microlens is positioned in a concave pit of the substrate and the method for manufacturing the microlens comprises the following steps: 1) forming the concave pit on one side of the substrate; 2) filling the concave pit with reflux photosensitive resist and then coating top layer masking photosensitive resist; 3) forming the photosensitive resist in the concave pit into a frustum shaped photosensitive resist column; 4) removing the top layer masking photosensitive resist; and 5) molting the photosensitive resist column by using a reflux process to form the microlens. Compared with the prior integrated microlens, the single-element integrated microlens has the characteristics of good lens shape, high entrenchment, batch production, and the like, and can be widely applied to light emitting tubes, lasers, photodetectors and other optical communication ...

A crossed combined dual cycle grating for quanta trap infrared detector

The invention discloses a crossed combinational dual-period grating for quantum well infrared detector. By arranging two sizes of gates across, the invention responses to two wave bands and acquires the information of the two wave bands. The cross array makes a very good response uniformity of the new-type gates on the whole surface, and the two types of gates are distributed as the Chinese character 'pin', which makes the photolithography linewidth up to the maximum and thereby enhances the precision of photolithography patterns. The square gate hole is used to prevent astigmatism; the optimized parameter design enhances the coupling efficiency of the gates. The invention is applied to dual-color quantum well infrared detectors, is able to acquire the objective information more accurately in two wave bands simultaneously, more effectively inhibits the complicate background, and then enhances the detecting effect of objectives. The invention has the advantages of simple fabrication, low ...

Mesa or quasi-mesa semiconductor device with scribing grooves and preparation method thereof

The invention discloses a mesa or quasi-mesa semiconductor device with scribing grooves and a preparation method thereof. In the device, the heights of the scribing grooves are the same as that of the intrinsic region of the device. The preparation method comprises: the material layer of the device is extended on a semi-insulating substrate by utilizing a metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) method, and a protective layer is added on the upper part of the material layer; a photoresist is coated on the upper part of material layer or protective medium; by utilizing a photoetching process, the mesa of the device is manufactured through a wet etching technology or plasma dry etching technology; and the photoresist is removed, so as to expose the intrinsic region and the epitaxial material surrounding the intrinsic region, and the scribing grooves are formed on the upper surface of the epitaxial material. According to the invention, the damage and ...

Manufacturing method of heterojunction bipolar transistor

The invention, which relates to the technical field of the manufacturing method of the semiconductor microwave device, discloses a manufacturing method of a heterojunction bipolar transistor. According to the method, a multi-layer composite collecting zone with non-uniform dosage concentrations and thicknesses in a low dosage concentration-high dosage concentration-low dosage concentration mode is adjusted to adjust electric field distribution of a base electrode-collecting zone; and the base electrode concentration, the emitter concentration, and the corresponding thicknesses are matched in an optimized mode, and a negative feedback is formed to the certain extent by using a parasitic resistor. With implementation of a full set of targeted technologies including the corrosion technology based on combination of the dry method and the wet method, the emitter region chamfered edge technology, the emitter region side wall protection technology, and the collecting zone horizontal undercutting ...

Infrared-ultraviolet multi-color detector and production process thereof

The invention discloses an infrared-ultraviolet multicolor detector and a preparation method thereof. The detector comprises a substrate, a multicolor detector table which is formed by orderly growing an AlN buffer layer, an n-type GaN/AlGaN emission layer, an undoped AlGaN barrier layer, an n-type AlGaN window contact layer, an undoped AlGaN absorbing layer, a p-type AlGaN limiting window layer and a p-type GaN contact layer on the substrate; an n-type bottom contact electrode is arranged on the n-type GaN/AlGaN emission layer, an n-type intermediate contact electrode is arranged on the n-type AlGaN window contact layer, and a p-type top contact electrode is arranged on the p-type GaN contact layer. The detector has the advantages of simple structure, easy growth, small volume, being capable of realizing triband response and the like. The detector simplifies the growth process and the processing technology of the device structure, improves the radioresistance capacity of the device, reduces ...

Waveguide optical detector and method for integrating monolithic of hetero-junction bipolar transistor

The invention pertains to electrooptical technology field, and particularly relates to an integration method of a waveguide photodetector and a monolithic of a heterojunction bipolar transistor. The method, on the epitaxial material structure of HBT, by adopting Zn diffusion process to change N type material in an HBT emitter region to P type material, P type material becomes the upper cladding ofthe waveguide photodetector, PN junction function is realized simultaneously, while material of a collector part can be used as the absorbing layer of the waveguide photodetector simultaneously, material of the sub-collector part constructs the lower cladding of the waveguide photodetector, the integration of the waveguide photodetector and the monolithic of the HBT is realized on the same epitaxial material. The method is fully compatible with HBY technology and WGPD technology, realizes the synchronous completion of the metal conduct layer of the HBT emitter and the P type ohm contact layerof ...

Waveguide optical detector and method for integrating monolithic of hetero-junction bipolar transistor

The invention pertains to electrooptical technology field, and particularly relates to an integration method of a waveguide photodetector and a monolithic of a heterojunction bipolar transistor. The method, on the epitaxial material structure of HBT, by adopting Zn diffusion process to change N type material in an HBT emitter region to P type material, P type material becomes the upper cladding of the waveguide photodetector, PN junction function is realized simultaneously, while material of a collector part can be used as the absorbing layer of the waveguide photodetector simultaneously, material of the sub-collector part constructs the lower cladding of the waveguide photodetector, the integration of the waveguide photodetector and the monolithic of the HBT is realized on the same epitaxial material. The method is fully compatible with HBY technology and WGPD technology, realizes the synchronous completion of the metal conduct layer of the HBT emitter and the P type ohm contact layer ...

Infrared-ultraviolet multi-color detector and production process thereof

The invention discloses an infrared-ultraviolet multicolor detector and a preparation method thereof. The detector comprises a substrate, a multicolor detector table which is formed by orderly growing an AlN buffer layer, an n-type GaN/AlGaN emission layer, an undoped AlGaN barrier layer, an n-type AlGaN window contact layer, an undoped AlGaN absorbing layer, a p-type AlGaN limiting window layer and a p-type GaN contact layer on the substrate; an n-type bottom contact electrode is arranged on the n-type GaN/AlGaN emission layer, an n-type intermediate contact electrode is arranged on the n-type AlGaN window contact layer, and a p-type top contact electrode is arranged on the p-type GaN contact layer. The detector has the advantages of simple structure, easy growth, small volume, being capable of realizing triband response and the like. The detector simplifies the growth process and the processing technology of the device structure, improves the radioresistance capacity of the device, reduces ...

Test fixture for microwave packaging device

The invention provides a test fixture for a microwave packaging device, which belongs to the technical field of microwave test and comprises a shell, a circuit board, a positioning block and a pressing block, the shell is provided with an accommodating cavity; the circuit board is arranged in the accommodating cavity of the shell, and a test circuit for testing a tested device is arranged on the circuit board; the positioning block is arranged on the circuit board, and the positioning block is provided with a mounting hole for placing a tested device; the pressing block is arranged on the positioning block, and the pressing block tightly presses the positioning block and the tested device on the circuit board. According to the test fixture of the microwave packaging device, the test circuit is manufactured on the circuit board, the shell for placing the circuit board and the positioning block for positioning the device to be tested are manufactured, and then the device to be tested and ...

Adaptive bipolar transistor power amplifier linear biasing circuit

The invention discloses an adaptive bipolar transistor power amplifier linear biasing circuit, and relates to the technical field of circuits for improving amplifiers to increase the efficiency and improve the linearity. The power supply input end of the biasing circuit is partitioned into four paths through a resistor Rbias0; the first path is connected with the base electrode of a triode QA1; the second path is connected with the collector electrode of a triode QA2; the third path is grounded through a capacitor Cin; the fourth path is connected with the base electrode of a triode QB1; the collector electrodes of the triodes QA1 and QA2 are connected with a VCC (Voltage to Current Converter); the emitter electrode of the triode QA1 is connected with the base electrode of the triode QA2 through a resistor RA1; the emitter electrode of the triode QA2 is grounded; the emitter electrode current of the triode QB1 is output to more than one radio frequency power amplifying tube branch respectively ...

production method of single-slice integrated micro-lens

The invention discloses a single-element integrated microlens, which comprises a substrate and a microlens, and is characterized in that the microlens is positioned in a concave pit of the substrate and the method for manufacturing the microlens comprises the following steps: 1) forming the concave pit on one side of the substrate; 2) filling the concave pit with reflux photosensitive resist and then coating top layer masking photosensitive resist; 3) forming the photosensitive resist in the concave pit into a frustum shaped photosensitive resist column; 4) removing the top layer masking photosensitive resist; and 5) molting the photosensitive resist column by using a reflux process to form the microlens. Compared with the prior integrated microlens, the single-element integrated microlens has the characteristics of good lens shape, high entrenchment, batch production, and the like, and can be widely applied to light emitting tubes, lasers, photodetectors and other optical communication ...

Monolithic integrated non-refrigerated infrared/ultraviolet double-color detector and manufacture method thereof

The invention discloses a monolithic integrated non-refrigerated infrared/ultraviolet double-color detector and a manufacture method thereof, belonging to the field of photoelectric detectors. The detector comprises a substrate, an ultraviolet sensitive thin film structure and an infrared sensitive thin film structure thereof are integrated on the same substrate material; a cushion layer, an ultraviolet sensitive layer, an isolation layer and an infrared detecting structure are sequentially arranged on the substrate upwardly. In the invention, SiC, GaN series or AlxGa1-xN series of the broad-band gap high-temperature semiconductor ultraviolet sensitive thin film structure and ferro-electricity, vanadium oxide or amorphous silicon of the non-refrigerated infrared sensitive thin film structure grow on the same substrate, and a relative simple material growth method and processing process are adopted to realize the monolithic integration of the non-refrigerated infrared/ultraviolet double-color ...

Broadband electrically controlled attenuator and automatic gain control circuit

The invention is suitable for the technical field of semiconductor microwave devices, and provides a broadband electrically controlled attenuator and an automatic gain control circuit, the broadband electrically controlled attenuator comprises an attenuation network and a power-up choke network; the attenuation network comprises four diodes, four diode chips form a pi-type attenuation network, the power-up choke network comprises five resistors, an inductor and a capacitor, the five resistors, a power supply port, a control voltage port and the ground jointly form a power-up loop to provide bias voltage for the four diode chips, the inductor has a choke function, and the capacitor has a choke function. And the first capacitor is designed at the control voltage port, is connected to the ground, and provides a filtering effect for the control voltage port so as to reduce the interference of ripple waves, noise and clutter on the power supply on the power supply, so that the electrically controlled ...

A crossed combined dual cycle grating for quanta trap infrared detector

Monolithic integrated non-refrigerated infrared/ultraviolet double-color detector

The invention discloses a monolithic integrated non-refrigerated infrared/ultraviolet double-color detector, belonging to the field of photoelectric detectors. The detector comprises a substrate, an ultraviolet sensitive thin film structure and an infrared sensitive thin film structure thereof are integrated on the same substrate material; a cushion layer, an ultraviolet sensitive layer, an isolation layer and an infrared detecting structure are sequentially arranged on the substrate upwardly. In the invention, SiC, GaN series or AlxGa1-xN series of the broad-band gap high-temperature semiconductor ultraviolet sensitive thin film structure and ferro-electricity, vanadium oxide or amorphous silicon of the non-refrigerated infrared sensitive thin film structure grow on the same substrate, and a relative simple material growth method and processing process are adopted to realize the monolithic integration of the non-refrigerated infrared/ultraviolet double-color detector so as to develop the ...