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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 8. Отображено 8.
06-10-2015 дата публикации

HIGH-QUALITY VANADIUM DIOXIDE FILM USING EPITAXIAL WAFER AND PREPARING METHOD THEREOF

Номер: KR1020150111563A
Автор: KANG, DAE JOON, YANG, HYOUNG WOO
Принадлежит:

The present invention relates to a method for synthesizing and preparing a high-quality VO_2 thin-film which can be used as a channel material in an optical device or an electronic device. A radio frequency (RF) sputtering method is used to synthesize the thin-film. The epitaxial wafer (GaN) in the group III-V is used as a substrate. According to the present invention, the synthesis method uses GaN having a grid structure similar to that of sapphire in order to synthesize the high-quality VO_2 thin-film. VO_2 thin-film also can control the conductivity rate through doping and be utilized in an electrode of the electronic device based on the VO_2 thin-film or in an optical device including GaN. COPYRIGHT KIPO 2016 ...

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Номер записи: 1
11-02-2019 дата публикации

고투자율의 이종복합자성시트 및 그의 제조방법

Номер: KR1020190012846A
Автор: 이우성, 홍원식, 양형우
Принадлежит:

... 고투자율을 갖는 이종복합자성시트 및 그의 제조방법이 제안된다. 본 발명에 따른 이종복합자성시트는 자성층 및 자성층 상에 형성된 페라이트 박막층을 포함한다.

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Номер записи: 2
11-06-2018 дата публикации

HIGH DENSITY DUST CORE FOR MOTOR WITH LOW LOSS CHARACTERISTIC AND MANUFACTURING METHOD THEREOF

Номер: KR1020180062778A
Автор: LEE, WOO SUNG, YANG, HYOUNG WOO
Принадлежит:

Proposed are a dust core with high performance representing a low iron loss characteristic and a manufacturing method thereof. The manufacturing method of a dust core according to the present invention includes a coating film forming step of forming a phosphorus insulation coating film including phosphorus (P) on the surface of iron powder, an adding step of adding ceramic oxide powder and silicon-based organic materials to the iron powder on which the phosphorus insulation coating film is formed, a forming step of forming a mixture with a dust core shape, and a thermal treatment step of forming a glass phase insulating film including phosphorus-ceramic-silicon on the surface of the iron powder by thermally treating a forming body. COPYRIGHT KIPO 2018 (AA) Start (BB) End (S110) Preparing iron powder (S120) Forming a phosphorus insulation coating film (S130) Adding ceramic powder and silicon-based organic materials (S140) Forming (S150) Thermally treating ...

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Номер записи: 3
05-10-2015 дата публикации

TECHNOLOGY FOR STABILIZING INSULATOR THERMALLY UNSTABLE OF METAL-INSULATOR PHASE TRANSITION SUBSTANCE IN ROOM TEMPERATURE USING SIMPLE OXYGEN CONTROL

Номер: KR1020150111214A
Автор: KANG, DAE JOON, YANG, HYOUNG WOO
Принадлежит:

The present invention relates to a method for stabilizing an M_2 phase, which is unstable insulator observed in specific conditions, to exist in a room temperature by controlling oxygen injected during a process of forming a VO_2 thin film. The thin film is formed by using an RF sputtering method, and a GaN substrate of which lattice-mismatch with a VO_2 substance is larger than sapphire is used. According to a control technology, the VO_2 thin film that the M_2 phase, which is the unstable insulator, is formed on the GaN substrate stably exists in a very stable condition by a very simple oxygen control so that the substance applicable to a study of the M_2 phase in a non-developed field of a metal-insulator phase transition mechanism study and technology development can be provided. COPYRIGHT KIPO 2016 ...

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Номер записи: 4
14-02-2018 дата публикации

THYRISTOR

Номер: KR1020180015851A
Автор: KANG, DAE JOON, YANG, HYOUNG WOO
Принадлежит:

The present invention provides a thyristor which includes a channel composed of vanadium dioxide and can control high voltage and high current. The thyristor of the present invention comprises: the channel composed of vanadium dioxide; a cathode connected to one end of the channel; an anode connected to the other end of the channel; a gate physically separated from the channel; and a dielectric material interposed between the channel and the gate. COPYRIGHT KIPO 2018 ...

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Номер записи: 5
27-06-2018 дата публикации

사이리스터

Номер: KR0101870860B1
Автор: 강대준, 양형우
Принадлежит: 성균관대학교산학협력단

... 본 발명의 사이리스터는 이산화 바나듐(vanadium dioxide)으로 구성된 채널(channel); 상기 채널의 일단에 연결된 캐소드(cathode); 상기 채널의 타단에 연결된 애노드(anode); 상기 채널과 물리적으로 이격된 게이트(gate); 및 상기 채널과 상기 게이트 사이에 개재된 유전체(dielectric)를 포함한다.

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Номер записи: 6
19-01-2024 дата публикации

음극재용 실리콘 탄소 코팅 장치

Номер: KR102627250B1
Автор: 양형우, 조성원, 김영재
Принадлежит: (주) 싸이엔텍

... 본 발명은 음극재용 실리콘 탄소 코팅 장치에 관한 것으로, 실리콘 분말이 저장되는 저장탱크; 제1 내부공간이 형성되어 있으며, 상기 저장탱크와 연결되어 상기 저장탱크로부터 상기 실리콘 분말이 공급되고, 상기 실리콘 분말에 코팅되는 탄소의 원천인 가스가 공급되는 제1 챔버유닛; 상기 실리콘 분말과 상기 가스가 이동할 수 있는 통로를 형성하고 있어 일측이 상기 제1 챔버유닛에 연결되고, 상기 실리콘 분말이 이동하는 동안 열을 가하여 상기 가스를 반응시켜 상기 탄소로 변화시키고 상기 실리콘 분말에 탄소를 코팅하는 실리콘 코팅 유닛; 제2 내부공간이 형성되어 상기 실리콘 코팅 유닛의 타측에 연결되며, 상기 실리콘 코팅 유닛에서 상기 탄소의 코팅이 완료된 코팅 실리콘 분말을 수거하는 제2 챔버유닛; 및 일측은 상기 제1 챔버유닛 내부에 결합되고 타측은 상기 제2 챔버유닛에 결합되며, 상기 제1 챔버유닛, 상기 실리콘 코팅 유닛 및 상기 제2 챔버유닛에 동시에 위치하여 상기 실리콘 분말에 탄소 코팅한 후 수거할 수 있도록 상기 제1 챔버유닛에 공급된 상기 실리콘 분말을 상기 실리콘 코팅 유닛을 거쳐 상기 제2 챔버 유닛으로 이동시키는 실리콘 분말 이송유닛을 포함한다.

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Номер записи: 7
03-02-2022 дата публикации

OPTICAL PATH CONTROL MEMBER AND DISPLAY DEVICE COMPRISING SAME

Номер: WO2022025529A1
Автор: PARK, Jin Gyeong, LEE, Jong Sik, KIM, Byung Sook, YANG, Hyung Woo
Принадлежит:

An optical path control member, according to an embodiment, comprises: a first substrate by which a first direction and a second direction are defined; a first electrode disposed on the first substrate; a second substrate disposed on the first substrate and by which the first direction and the second direction are defined; a second electrode disposed under the second substrate; and an optical conversion unit disposed between the first electrode and the second electrode, wherein the second substrate and the second electrode include a cutting part penetrating the second substrate and the second electrode, the cutting part includes: a 1-1 cutting part and a 1-3 cutting part disposed to face each other in the second direction; a 1-2 cutting part disposed adjacent to the 1-1 cutting part and spaced apart from the 1-1 cutting part; and a 1-4 cutting part disposed adjacent to the 1-3 cutting part and spaced apart from the 1-3 cutting part, a 1-1 sealing part and a 1-3 sealing part are respectively ...

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Номер записи: 8