ОПТОЭЛЕКТРОННОЕ УСТРОЙСТВО ДЛЯ ВЫСОКОСКОРОСТНОЙ ПЕРЕДАЧИ ДАННЫХ, ОСНОВАННОЕ НА СДВИГЕ КРАЯ СТОП-ЗОНЫ РАСПРЕДЕЛЕННОГО БРЭГГОВСКОГО ОТРАЖАТЕЛЯ ЗА СЧЕТ ЭЛЕКТРООПТИЧЕСКОГО ЭФФЕКТА

Вертикально интегрированное оптоэлектронное устройство служит для высокоскоростной передачи данных путем прямой или непрямой модуляции интенсивности испускаемого света. Прибор включает в себя по меньшей мере один многослойный интерференционный отражатель и по меньшей мере один резонатор. В одном варианте осуществления изобретения отражатель работает в качестве модулирующего элемента под управлением приложенного напряжения. Край стоп-зоны подвергается настройке электрооптическими методами благодаря квантово-ограниченному эффекту Штарка вблизи резонансной моды, что создает модуляцию коэффициента пропускания отражателя и, таким образом, производит непрямую модуляцию интенсивности света. В другом варианте осуществления изобретения профиль оптического поля в резонаторе является функцией смещения длины волны стоп-зоны, и устройство работает в качестве излучателя света с настраиваемой длиной волны. В другом варианте осуществления изобретения в отражателе создаются две или более периодичности в ...

Halbleiterlaservorrichtung und Verfahren zu ihrer Herstellung.

OBERFLÄCHENEMITTIERENDE LASER MIT VERTIKALEM RESONATOR UND DARIN ENTHALTENEN STRUKTUREN

Lichtemittierendes Element, Herstellungsverfahren für ein lichtemittierendes Element und Verfahren zum Entwerfen einer Phasenmodulationsschicht

Das lichtemittierende Element gemäß einer Ausführungsform gibt ein klares optisches Bild aus, während es eine Verringerung der Lichtausgangsleistung unterdrückt, und umfasst ein Substrat, eine Lichtemissionseinheit und eine Bondschicht. Die Lichtemissionseinheit hat einen Halbleiterstapel, einschließlich einer Phasenmodulationsschicht, zwischen ersten und zweiten Elektroden. Die Phasenmodulationsschicht hat eine Basisschicht und modifizierte Brechungsindexbereiche und enthält einen ersten Bereich mit einer Größe, die die zweite Elektrode aufweist, und einen zweiten Bereich. Jeder Schwerpunkt des modifizierten Brechungsindexbereichs des zweiten Bereichs ist durch eine Anordnungsbedingung angeordnet. Das Licht von dem Stapel ist ein einzelner Strahl, und bezüglich eines ersten Abstands von dem Substrat zu der Vorderfläche des Stapels und eines zweiten Abstands von dem Substrat zu der Rückfläche des Stapels ist ein Änderungsbetrag des ersten Abstands entlang einer Richtung auf dem Substrat ...

Herstellungsverfahren einer optischen Halbleitervorrichtung

Optische Halbleitervorrichtung.

Defektbasierte Silizium-Laserstruktur

Halbleiterlaserdiode vom VCSEL-Typ mit einem SilizSilizium-Germanium, die sich, von einer Haupt-Oberfläche des Siliziumsubstrats ausgehend, ins Substratinnere hinein erstreckt und als Resonator-Endflächen eine erste Spiegelschicht an der für die Lichtemission vorgesehenen Substratoberfläche und eine vergrabene zweite Spiegelschicht im Siliziumsubstrat aufweist; einem in der Laserkavität angeordneten Verstärkungsgebiet aus kristallinem Silizium oder Silizium-Germanium, welches struktuelle Defekte seines Kristallgitters und an diesen lokalisiert eine Vielzahl elektronischer Mehrniveau-Systeme enthält, die durch Ladungsträgerinjektion jeweils geeigneter Ladungsträgerdichte in das aktive Gebiet anregbar sind, zur spontanen Emission von Licht und als Gesamtheit in einen zur optischen Verstärkung des Lichts durch stimulierte Emission geeigneten Besetzungsinversionszustand; und mit lateral dem Verstärkungsgebiet an einander gegenüberliegenden Seiten benachbarten und entgegengesetzt leitfähigen ...

Vollständig selbstjustierter oberflächenemittierender Halbleiterlaser für die Oberflächenmontage mit optimierten Eigenschaften

Die vorliegende Erfindung bezieht sich auf einen oberflächenemittierenden Halbleiterlaser mit vertikalem Resonator, aufweisend einen Substratbasisabschnitt (1) und eine auf und/oder an dem Substratbasisabschnitt angeordnete Mesa (M), wobei die Mesa im Wesentlichen senkrecht zur Substratbasisebene gesehen, umfasst: zumindest einen Teil eines ersten, dem Substratbasisabschnitt zugewandt angeordneten Dotierbereiches (2), zumindest einen Teil eines zweiten, dem Substratbasisabschnitt abgewandt angeordneten Dotierbereiches (4) und einen zwischen dem ersten und dem zweiten Dotierbereich angeordneten aktiven Bereich (3) mit mindestens einer aktiven Schicht (A) mit laseremittierender Zone, welche imert, dadurch gekennzeichnet, dass die Mesa (M) in indestens eine Einschnürung (E) aufweist.

A light emitting device

A light emitting device comprises at least two light emitting elements, 42a and 42b, each element having an impedance and an individual quantum efficiency, which are electrically and optically connected, by metal layers, 54a and 54b, such that the device quantum efficiency is greater than the individual element quantum efficiencies. The optical elements have a common optical path 48 through which the beams of output radiation form the optical elements are transmitted. The light emitting device may comprise a plurality of diodes connected in series such that the input impedance of the light emitting device is equal to 50 L without the need for resistive impedance matching elements. The diodes may be AlGaAs, AlGaInP, AlGaInAs or AlGaInAsP laser diodes. The light emitting device may comprise plural quantum cascade lasers. The light emitting device is described being used in an optically coupled bipolar transistor, in fibre optic links and an optical repeater having optical gain.

Light emitting device having heat-dissipating element

A light emitting device (e.g. a GaN based III-V nitride device) having a heat dissipating element is provided. The device includes an active layer 160b between first and second material layers for inducing laser emission, a first electrode 154 contacting the lowermost layer 152 of the first material layers, a second electrode contacting the uppermost layer 164 of the second material layers, and a heat dissipating element in contact with the lowermost layer 152. The heat dissipating element is a thermal conductive layer 156 which contacts a region of the lowermost layer 152, while a substrate 150 is present on the remaining region of the lowermost layer 152. The thermal conductive layer may contact the lowermost layer 152 through one or more via holes formed in the substrate. A dent extending into the lowermost layer 152 may also be formed along with the via hole (figure 10).

Current-controlled polarization switching vertical cavity surface emitting laser

PHOTONIC CHIP WITH BURIED LASER SOURCE

Puce photonique comportant : - une couche optique (38) collée, au niveau d'une interface (40) de collage, sur un support (36), - une source laser (70 ) comportant un guide d'onde (76) encapsulé dans une sous- couche d'encapsulation (122) de la couche optique, ce guide d'onde comportant un premier contact électrique (148A, 148B, 148C) enfoui à l'intérieur de la sous-couche (122) d'encapsulation. La puce photonique comporte un réseau de métal d'interconnexion formant un via (158A, 158B, 158C) qui s'étend, à l'intérieur de la couche optique (38), depuis l'interface (40) de collage jusqu'au premier contact électrique enfoui (148A, 148B, 48C; 264) du guide d'onde, ce réseau de métal d'interconnexion comportant des via métalliques qui raccordent électriquement entre-elles des lignes de métal qui s'étendent principalement parallèlement au plan de la puce, ces lignes de métal étant disposées les une au-dessus des autres à l'intérieur de la couche optique (38).

ELECTRICALLY PUMPED VERTICAL CAVITY LASER

Disclosed is an electrically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses an interband cascade gain region, two distributed mirrors, and a low-loss refractive index waveguide. A preferred embodiment includes at least one wafer bonded GaAs-based mirror.

A SINGLE-CHIP SERIES CONNECTED VCSEL ARRAY

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

HIGH POWER LASER GRID STRUCTURE

Disclosed herein are various embodiments for laser apparatuses. In an example embodiment, the laser apparatus comprises (1) a laser-emitting epitaxial structure having a front and a back, wherein the laser-emitting epitaxial structure is back-emitting and comprises a plurality of laser regions within a single mesa structure, each laser region having an aperture through which laser beams are controllably emitted, (2) a micro-lens array located on the back of the laser-emitting epitaxial structure, wherein each micro-lens of the micro-lens array is aligned with a laser region of the laser-emitting epitaxial structure, and (3) a non-coherent beam combiner positioned to non-coherently combine a plurality of laser beams emitted from the apertures.

VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH INTRA-CAVITY STRUCTURES

... 2135182 9322813 PCTABS00028 Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper mirror (70) and a lower mirror (20). The laser cavity comprises upper spacer (50) and lower spacer (30) layers sandwiching an active region (40). A stratified electrode (60) for conducting electrical current to the active region (40) is disposed between the upper mirror (70) and the upper spacer (50). The stratified electrode (60) comprises a plurality of alternating high and low doped layers (62, 63, 64) for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the ...

Vertical cavity surface emitting laser

This vertical cavity surface emitting laser is provided with: a base substrate (11) that is formed of a semi-insulating semiconductor; an emission region multilayer part which is formed on the surface of the base substrate (11) and comprises an N-type semiconductor contact layer (21), an N-type DBR layer (22), an active layer (40), a P-type semiconductor DBR layer (23) and a P-type semiconductor contact layer (24); an anode electrode (921) that is connected to the P-type semiconductor contact layer (24); and a cathode electrode (911) that is formed on the surface side of the base substrate (11) and is connected to the N-type semiconductor contact layer (21). The N-type DBR layer (22) is obtained by laminating 15 or more pairs of layers having different compositions. Consequently, there is provided a vertical cavity surface emitting laser which is capable of suppressing the occurrence of defects due to crystal missing that is attributed to the base substrate, while suppressing the cost.

Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device

A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).

Semiconductor element and its manufacture

A semiconductor element which is adapted to make the stable operation possible is provided. The semiconductor element includes a substrate having a dislocation concentration region on at least a part of the rear surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulation film formed on the dislocation concentration region, and a rear surface side electrode formed in such a manner of contacting with a region on the rear surface of the substrate except for the dislocation concentration region.

Semiconductor laser array

A semiconductor laser array according to the invention is so constructed that plural LDs are driven by the same modulating signal, and series connection of the plural LDs becomes possible. Accordingly, efficiency of modulation of the aforementioned semiconductor laser array is largely improved. After a n-InP clad layer 6, an active layer 7 and a p-InP layer 8 are successively grown on a semi-insulating substrate 5, the n-InP clad layer 6 is etched and a stripe shaped mesa is formed. Then, a p-InP current blocking layer 9 and a n-InP current blocking layer 10 are grown on the etched portion. After fabricating a p+-InP cap layer 11 thereon, the surface of the n-InP clad layer 6 is exposed by selective etching. Moreover, a channel 12 for isolating the adjacent LDs, reaching the semi-insulating layer 5, is formed by penetrating the n-InP clad layer 6. Each of the LDs is provided with a p-side electrode 13 and a n-side electrode 14 thereon, and a p-side electrode 13 of any LD is connected to ...

Surface-emitting type semiconductor laser and method for manufacturing the same

A surface-emitting type semiconductor laser includes: an upper mirror and a lower mirror each composed of alternately formed first semiconductor layers and second semiconductor layers; an active layer disposed between the upper mirror and the lower mirror, wherein the surface-emitting laser emits laser light in a direction in which the first semiconductor layers and the second semiconductor layers are formed; a thick film layer formed with one of the first semiconductor layers composing the lower mirror, the thick film layer being thicker than other of the first semiconductor layers; and a third semiconductor layer provided between the thick film layer and one of the second semiconductor layers on the thick film layer, the third semiconductor layer having a refractive index between a refractive index of the first conductive layer and a refractive index of the second semiconductor layer.

VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter

A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The pump layer (6) follows the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied on the side of the semiconductor laser device which is closer to the pump layer (6) than to the conductive layer (13). An electrical field can be applied between this contact (9) and the conductive layer (13) for generating pump radiation (7) by charge carrier injection.

Long wavelength vertical cavity surface emitting laser

Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 mum light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.

Semiconductor laser diode and semiconductor laser diode assembly containing the same

Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser diode includes: a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel defined so that a top material layer of the second material layer is limitedly exposed, and in which a second electrode layer which is in contact with the top material layer of the second material layer via the channel is formed; and a first protrusion, which is positioned at one side of the ridge waveguide and has not less height than that of the ridge waveguide.

OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor light-emitting device according to one embodiment includes a substrate, a first light reflection structure provided in contact with the substrate, a buried layer surrounding the first light reflection structure, an optical semiconductor structure including an active layer, provided above the first light reflection structure, a second light reflection structure provided above the optical semiconductor structure, and a pair of electrodes which supply current to the optical semiconductor structure. The surface of the first light reflection structure and the surface of the buried layer are included in the same plane.

Nitride semiconductor laser device

A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 mum and the etching depth is below the thickness of the p-side cladding layer of 0.1 mum and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 mum, an aspect ratio is improved in far field image. Moreover ...

Single-chip series connected VCSEL array

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

Low capacitance optoelectronic device

An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached.

Flying recording head having semiconductor laser formed by growing semiconductor crystal, and method of manufacturing same

A small, high-precision, and cheap flying recording head having high mass-productivity, high recording density, and high transfer rate, a disk drive, and a method of manufacturing the flying recording head are disclosed. The flying recording head is manufactured by forming a semiconductor laser oscillation region by growing a semiconductor crystal on a rear end surface of a substrate made of a single crystal such as sapphire, and forming a air bearing surface in an output surface of the semiconductor laser and the substrate.

Manufacturable multi-emitter laser diode

A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

Rigid High Power and High Speed Lasing Grid Structures

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an epitaxial material comprising a mesa structure in combination with an electrical waveguide, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure.

Double wavelength semiconductor light emitting device and method of manufacturing the same

Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same. Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and ...

LASER ELEMENT

A laser element comprises a substrate, an adhesive layer, and a laser unit adhesive to the substrate by the adhesive layer. The laser unit includes a front conductive structure, a first type semiconductor stack, an active layer, a second type semiconductor stack, a patterned insulating layer, a back conductive structure. The back conductive structure includes a first electrode and a second electrode, and the first electrode of the back conductive structure contacts the second type semiconductor stack. A via hole passing through the patterned insulating layer, the second type semiconductor stack, the active layer and the first type semiconductor stack, and a conductive channel located in the via hole and electrically connected to the second electrode of the back conductive structure and the front conductive structure. A first passivation layer formed on a sidewall of the via hole and located between the conductive channel and the sidewall of the via hole.

DIFFUSOR LENS, LIGHT SOURCE, METHOD OF FABRICATING A LIGHT SOURCE AND METHOD OF ILLUMINATING A SCENE

The present invention describes a diffusor lens (1), comprising a first annular lens segment (12) and a second annular lens segment (14), the first and second lens segment (12, 14) being concentric, wherein the first and second lens segment (12, 14) adjoin at an interface (10), and wherein a first surface profile (22) of the first lens segment (12) and a second surface profile (24) of the second lens segment (14) have a slope with opposite sign in a cross-section along a plane including an optical axis of the diffusor lens (1). The present invention further describes a light source (50) comprising a VCSEL (70) and such a diffusor lens (1), a method of fabricating such a light source (50) and a method of illuminating a scene.

VCSEL С ВНУТРИРЕЗОНАТОРНЫМИ КОНТАКТАМИ

Использование: для создания лазерного устройства с высокой эффективностью преобразования мощности. Сущность изобретения заключается в том, что лазерное устройство образовано по меньшей мере одним поверхностно-излучающим лазером с вертикальным резонатором с внутрирезонаторными контактами, причем упомянутый поверхностно-излучающий лазер с вертикальным резонатором содержит эпитаксиальную слоистую структуру с активной областью между первым распределенным брэгговским отражателем и вторым распределенным брэгговским отражателем, первым слоем токовой инжекции первого типа проводимости между первым распределенным брэгговским отражателем и активной областью и вторым слоем токовой инжекции второго типа проводимости между вторым распределенным брэгговским отражателем и активной областью, и при этом дополнительно содержит токовую апертуру, причем упомянутые первый и второй слои токовой инжекции находятся в контакте с первым и вторым металлическими контактами соответственно, в котором упомянутые первый ...

MEHRSTRAHLHALBLEITERLASEREINRICHTUNG

VCSEL

A vertical cavity surface emitting semiconductor laser (VCSEL) with a triangular or truncated triangular prism optical cavity resonator based on III-V and II-VI semiconductor compounds and their alloys is disclosed. The use of a triangular or truncated triangular prism optical cavity resonator with a high quality factor for vertical and lateral confinement of light allows both the advantages of usual VCSELs and lateral cavity triangular lasers. In an alternative embodiment a lateral emission can be redirected vertically by a mirror or grating (see figures 2 and 3).

DIODE LASER

TERAHERTZ QUANTUM CASCADE LASER

Integration of transistors with vertical cavity surface emitting lasers

Light emitting semiconductor methods and devices

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity ...

Laser element

A laser element includes a transparent substrate, an adhesive layer, and a laser unit. The transparent substrate comprises a conductive layer. The adhesive layer is attached to the transparent substrate. The laser unit includes a front conductive structure, and a back conductive structure. The front conductive structure is attached to the adhesive layer. The back conductive structure is opposite to the front conductive structure, and the back conductive structure includes a plurality of detecting electrodes separated from each other. The detecting electrodes extends from the back conductive structure and penetrates through the front conductive structure and the adhesive layer; wherein the detecting electrodes is connected to the plurality of detecting electrodes and the conductive layer.

Nitride semiconductor laser device

A nitride semiconductor laser device of high reliability such that the width of contact between a p-side ohmic electrode and a p-type contact layer is precisely controlled. The device comprises a substrate, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer. All the layers are formed in order on the substrate. A ridge part including the uppermost layer of the p-type nitride semiconductor layer, i.e., a p-type contact layer is formed in the p-type nitride semiconductor layer. A p-side ohmic electrode is formed on the p-type contact layer of the top of the ridge part. A first insulating film having an opening over the top of the ridge part covers the side of the ridge part and the portion near the side of the ridge part. The p-side ohmic electrode is in contact with the p-type contact layer through the opening. A second insulating film is formed on the first insulating film.

Semiconductor laser and semiconductor laser module

The present invention provides a semiconductor laser capable of performing high-speed modulation and having a low-capacity structure. The semiconductor laser comprises a semiconductor substrate, a multilayered growth layer which is formed on the main surface side of the semiconductor substrate in multilayer form and which is electrically isolated from the semiconductor substrate and includes, in a middle layer, an active layer interposed between a semiconductor layer of first conductivity type corresponding to a lower layer and a semiconductor layer of second conductivity type corresponding to an upper layer, a ridge formed between two trenches, which is provided on the surface of the multilayered crystal layer without reaching the active layer, a first isolation trench which is provided outside the trench located on one or other side of the ridge along the ridge and reaches a semiconductor layer below the active layer, and a second isolation trench which reaches a surface layer of the ...

Nitride semiconductor laser device

A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 mum and the etching depth is below the thickness of the p-side cladding layer of 0.1 mum and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 mum, an aspect ratio is improved in far field image. Moreover ...

Monolithic III-V nanolaser on silicon with blanket growth

A nanolaser includes a silicon substrate and a III-V layer formed on the silicon substrate having a defect density due to differences in materials. A laser region is formed on or in the III-V layer, the laser region having a size based upon the defect density.

Optical semiconductor device having ridge structure formed on active layer containing p-type region and its manufacture method

A p-type cladding layer ( 3 ) of p-type semiconductor is formed over a substrate. An active layer ( 5 ) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer ( 10 ) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer ( 11 ) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer.

VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) TUNED THROUGH APPLICATION OF MECHANICAL STRESS VIA A PIEZOELECTRIC MATERIAL

A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material. The electric field causes the piezoelectric material to experience the mechanical stress, which causes the active cavity material structure to experience the mechanical stress, which causes the emission wavelength of the VCSEL to ...

Semiconductor laser

In one embodiment, a semiconductor laser includes a semiconductor laminated body formed in a ring shape and first and second electrodes. The semiconductor laminated body includes an active layer, first and second cladding layers formed on both sides of the active layer, first and second contact layers formed on the first and second cladding layers, and first and second modified layers. The first and second modified layers are formed by selectively modifying the inner peripheral sidewalls and the outer peripheral sidewalls of the first and second cladding layers so as to have a refractive index lower than the refractive indexes of the first and second cladding layers. The first and second contact layers are electrically connected to the first and second electrodes.

Nitride-compound semiconductor device

A GaAlInBN systems semiconductor device is spaced apart from a substrate by a layer for reducing the propagation of a dislocation. This layer has a protrusion or protrusions, each having sidewalls on which a single crystal is exposed.

Light emitting device and projector

The light emitting device includes an excitation light source, and a light emitting light source, wherein the light emitting light source includes a substrate, a photonic crystal structure which is provided to the substrate and has a light emitting layer, and an electrode configured to inject an electrical current into the light emitting layer, the excitation light source irradiates the light emitting layer with excitation light, the light emitting layer generates light due to the electrical current injected from the electrode and the excitation light, and in the photonic crystal structure, the light emitted in the light emitting layer resonates in an in-plane direction of the substrate, and a laser beam is emitted in a normal direction of the substrate.

Flip-chip automatically aligned optical device

A semiconductor laser device with a first side and a second side, comprising (a) an active region, (b) a P layer, wherein the P layer contains a first contact area, (c) an N layer, wherein said N layer contains a second contact area, wherein the contact area of the first contact area of the P layer and the second contact layer of the N layer reside on the first side of the laser device.

Nitride-based semiconductor light-emitting device and method of fabricating the same

A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

Surface-emitting type semiconductor laser and method for manufacturing the same

A reliable surface-emitting type semiconductor laser and a method for manufacturing the same, is capable of controlling polarization planes of laser light without lowering the energy usage efficiency. The surface-emitting type semiconductor laser has a first mirror, an active layer and a second mirror formed above a substrate, a first columnar section formed adjacent to the active layer and including a dielectric layer defining an opening section and a second columnar section formed above the first columnar section. A planar configuration of the second columnar section has anisotropy.

ЛАЗЕРНОЕ УСТРОЙСТВО С НИТРИДНЫМ ПОЛУПРОВОДНИКОМ И СПОСОБ ФОРМИРОВАНИЯ ЭЛЕКТРОДОВ К НЕМУ

... 1. Лазерное устройство с нитридным полупроводником, содержащее подложку, нитридный полупроводниковый слой с электронной проводимостью, расположенный на подложке, активный слой, расположенный на нитридном полупроводниковом слое с электронной проводимостью, нитридный полупроводниковый слой с дырочной проводимостью, расположенный на активном слое, имеющий контактный слой с дырочной проводимостью в качестве верхнего слоя и гребень, который включает в себя, по меньшей мере, указанный контактный слой с дырочной проводимостью, и, омический электрод с дырочной проводимостью, введенный в соприкосновение с обеспечением при этом омического контакта с контактным слоем, имеющим дырочную проводимость и входящим в состав гребня, сформированного, по существу, параллельно по отношению к направлению резонанса, в котором предусмотрена первая изоляционная пленка, имеющая отверстие, раскрывающееся к верхней поверхности гребня, сформированная так, что она закрывает собой, по меньшей мере, боковую поверхность ...

ОПТОЭЛЕКТРОННОЕ УСТРОЙСТВО ДЛЯ ВЫСОКОСКОРОСТНОЙ ПЕРЕДАЧИ ДАННЫХ

... 1. Полупроводниковое оптоэлектронное устройство содержащее: ! a) по меньшей мере одну область резонатора, ! b) по меньшей мере один многослойный интерференционный отражатель, ! c) по меньшей мере одну область модуляции, которая электрооптически настраивает длину волны края стоп-зоны многослойного интерференционного отражателя по отношению к резонансной длине волны первого резонатора, ! d) по меньшей мере один светогенерирующий элемент, содержащий область усиления, который генерирует свет при приложении к области усиления прямого смещения, и ! e) по меньшей мере три электрических контакта, которые независимо подают смещение к области модуляции и к светогенерирующему элементу, ! при этом настройка происходит через варьирование оптического пропускания многослойного интерференционного отражателя. ! 2. Полупроводниковое оптоэлектронное устройство по п.1, в котором область модуляции настраивает длину волны края стоп-зоны многослойного интерференционного отражателя относительно по меньшей мере ...

NITRIDHALBLEITERLASERELEMENT

INTEGRIERTE ARRAYS VON MODULATOREN UND LASERN AUF EINER ELEKTRONISCHEN SCHALTUNG

Quantenkaskadenlaser

Die Erfindung betrifft einen Quantenkaskadenlaser (10) zum Erzeugen von elektromagnetischer Strahlung im THz- und/oder MIR-Bereich umfassend einen optischen Wellenleiter (12) mit einer optischen Achse (14) aus einem Halbleiterlasermaterial, wobei der optische Wellenleiter (12) an zwei einander gegenüberliegenden Enden der optischen Achse (14) zwei zueinander parallele Facetten (18, 20) umfasst, die zwei Facetten (18, 20) sich senkrecht zur optischen Achse (14) erstrecken und derart ausgestaltet sind, dass sie einen optischen Resonator bilden, wobei vorgesehen ist, dass in einen Bereich (22) der ersten Facette (18) des optischen Wellenleiters (12) eine photoleitende Antenne (24) integriert ist. Weiterhin betrifft die Erfindung ein Verfahren zur Herstellung des obigen Quantenkaskadenlasers (19) mittels Ionenimplantation.

Oberflächenlichtemittierendes Bauelement, optisches Modul, Lichtübertragungsvorrichtung

Oberflächenemittierender Laser mit integriertem gleichrichtenden Element

SEMICONDUCTOR DIODE LASERS

Laser diodes

A quantum random number generator

Electro-optical device with lateral active regions

INTEGRATED ARRAYS OF MODULATORS AND LASERS ON AN ELECTRONIC CIRCUIT

DIODE LASER DIODE WITH BAR TRANSVERSE ELECTROMAGNETIC WAVE

LONG WAVELENGTH VCSEL WITH TUNNEL JUNCTION AND IMPLANT

Laser grid structures for wireless high speed data transfers

Disclosed herein are various embodiments for high performance wireless data transfers. In an example embodiment, laser chips are used to support the data transfers using laser signals that encode the data to be transferred. The laser chip can be configured to (1) receive a digital signal and (2) responsive to the received digital signal, generate and emit a variable laser signal, wherein the laser chip comprises a laser-emitting epitaxial structure, wherein the laser-emitting epitaxial structure comprises a plurality of laser-emitting regions within a single mesa structure that generate the variable laser signal. Also disclosed are a number of embodiments for a photonics receiver that can receive and digitize the laser signals produced by the laser chips. Such technology can be used to wireless transfer large data sets such as lidar point clouds at high data rates.

PHOTOTONIC CHIP CROSSED BY A VIA

Puce photonique comportant : - une couche optique (38) collée, au niveau d'une interface (40) de collage, sur une couche (36) d'interconnexion, l'épaisseur de la couche optique étant inférieure à 15 µm, - un via primaire (50-52) s'étend à travers la couche d'interconnexion uniquement entre une face inférieure (34) et l'interface (40) de collage, - une borne électrique choisie dans le groupe constitué d'un contact électrique (74) enfoui à l'intérieur de la couche optique (38) et d'une piste électrique (106, 108) réalisée sur une face supérieure, - un via secondaire (100, 102, 130) qui prolonge le via primaire à l'intérieur de la couche optique pour raccorder électriquement le via primaire à la borne électrique, ce via secondaire s'étendant à l'intérieur de la couche optique (38) depuis l'interface (40) de collage jusqu'à la borne électrique, le diamètre maximal de ce via secondaire étant inférieur à 3 µm.

METHOD FOR MAKING OHMIC CONTACT THERMALLY STABLE ON INP SEMICONDUCTOR OR INGAAS

Vertical cavity surface emitting laser including nanostructure reflector and optical apparatus adopting the vertical cavity surface emitting laser

FLIP CHIP TYPE LASER DIODE

Ridge waveguide semiconductor laser diode

In the ridge waveguide semiconductor laser diode of the present invention, a novel laser device is provided to prevent abnormal laser characteristics and deterioration of lifetime characteristics occurred during installation. The ridge waveguide semiconductor laser diode comprises: a p-type semiconductor layer 14 having a ridge-forming waveguide 14a; a protective insulating layer 17 covering the ridge so as to expose at least a portion of a top face of the ridge; a p-side ohmic electrode 15 in ohmic contact with the portion of the ridge; a p-side pad electrode 19 disposed so as to electrically connect to the p-side ohmic electrode; and a diffusion-prevention layer 30 to prevent metal with low melting-point from diffusion is formed between the p-side ohmic electrode and the p-side pad electrode. The diffusion-prevention layer covers at least the ridge-like part 14a exposed from the protective insulation film 17. By using the diffusion-prevention layer to inhibit the metal with low melting ...

MICRO LIGHT EMISSION ELEMENT AND IMAGE DISPLAY DEVICE

Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.

GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same

A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

Light Emitting And Lasing Semiconductor Methods And Devices

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity ...

VCSEL and the fabrication method of the same

A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision.

Method for manufacturing of light emitting device using GaN series III-V group nitride semiconductor material

A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

VERTICAL CAVITY SURFACE-EMITTING LASER, MANUFACTURING METHOD THEREOF, MANUFACTURING METHOD OF MODULE AND METHOD OF PICKING UP VERTICAL CAVITY SURFACE-EMITTING LASER

A vertical cavity surface-emitting laser includes a light emitting portion provided on a substrate, a first pad provided on the substrate, the first pad being electrically connected to the light emitting portion, and a second pad provided on the substrate, the second pad being electrically isolated from the light emitting portion and the first pad.

LIGHT EMITTING DEVICE AND PROJECTOR

A light emitting device includes resonant parts constituted by a photonic crystal structure, and rows each of which includes the resonant parts arranged along a first direction, wherein light resonating in the resonant part resonates in a first resonant direction and a second resonant direction, the rows are arranged along a second direction, the rows include a first row, and a second row, a distance between the resonant part located furthest at one side of the first direction in the first row and the resonant part located furthest at the one side of the first direction in the second row is different from a distance between the resonant part located furthest at the one side of the first direction and the resonant part located furthest at another side of the first direction in the first row, the first and second resonant directions are along the first and second axes respectively, and in a plan view a length along the first direction of the resonant part and a length along the second direction ...

Nitride semiconductor element and manufacturing method therefor

An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.

Semiconductor laser device and method for fabricating the same

A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part of the p-type cladding layer extending from each side of the ridge portion.

Integrated semiconductor optical amplifier and laser diode at visible wavelength

An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.

SURFACE-EMITTING LASER ARRAY, LIGHT SOURCE MODULE, AND DISTANCE-MEASURING APPARATUS

A surface-emitting laser array includes a substrate and a sub-arrays disposed on the substrate, the sub-arrays including a surface-emitting laser devices electrically connected to each other in parallel to emit light through the substrate, each of the surface-emitting laser devices having a light-emitting point and including a first semi-conducting layer of first conductivity. The laser array further includes a second semi-conducting layer of second conductivity, and a resonator disposed between the first semi-conducting layer and the second semi-conducting layer. The sub-arrays adjacent to each other include an electrode to electrically connect the first semi-conducting layer in the surface-emitting laser devices included in one of the sub-arrays and the second semi-conducting layer.

ЛАЗЕРНОЕ УСТРОЙСТВО С НИТРИДНЫМ ПОЛУПРОВОДНИКОМ И СПОСОБ ФОРМИРОВАНИЯ ЭЛЕКТРОДОВ К НЕМУ

Изобретение относится к лазерному устройству с нитридным полупроводником. Предлагаемое устройство содержит подложку, нитридный полупроводниковый слой с электронной проводимостью, активный слой и нитридный полупроводниковый слой с дырочной проводимостью. Все эти слои сформированы в указанной последовательности на подложке. На нитридном полупроводниковом слое с дырочной проводимостью сформирована гребневая часть, включающая в себя самый верхний слой указанного нитридного полупроводникового слоя, имеющего дырочную проводимость. Наверху этой гребневой части, где находится контактный слой, обладающий дырочной проводимостью, сформирован соответствующий омический электрод, имеющий дырочную проводимость. Предусмотрено наличие первой изоляционной пленки, имеющей отверстие над верхом гребневой части и закрывающей собой боковину указанной гребневой части, а также ближайшую к этой боковине область, прилегающую к гребневой части. Омический электрод, имеющий дырочную проводимость, соприкасается с указанным ...

Elektrooptische Einheit mit III-V-Verstärkungsmaterialien und integriertemKühlkörper

Eine elektrooptische Einheit mit zwei Wafer-Komponenten und ein Verfahren zur Fertigung von Einheiten. Eine erste Wafer-Komponente beinhaltet ein Siliciumsubstrat und eine Mantelschicht auf diesem. Die Mantelschicht weist einen darin ausgebildeten Hohlraum auf, wobei der Hohlraum mit einem elektrisch isolierenden Wärmeverteiler gefüllt ist, der eine größere Wärmeleitfähigkeit als diejenige der Mantelschicht aufweist. Die zweite Wafer-Komponente weist einen Stapel von III-V-Halbleiter-Verstärkungsmaterialien auf, der für eine optische Verstärkung einer bestimmten Strahlung entwickelt ist. Die zweite Wafer-Komponente ist so mit der ersten Wafer-Komponente verbunden, dass der Stapel von III-V-Halbleiter-Verstärkungsmaterialien in thermischer Verbindung mit dem Wärmeverteiler steht. Darüber hinaus weist der Wärmeverteiler einen Brechungsindex auf, der jeweils niedriger als der Brechungsindex des Siliciumsubstrats und als ein mittlerer Brechungsindex des Stapels von III-V-Halbleiter-Verstärkungsmaterialien ...

Verfahren zur Herstellung eines oberflächenemittierenden Laserelements mit vertikalem Resonator, oberflächenemittierendes Laserelement mit vertikalem Resonator, Abstandssensor und elektronisches Bauelement

... [Problem] Das Bereitstellen eines Verfahrens zur Herstellung eines oberflächenemittierenden Laserelements mit vertikalem Resonator, das eine hervorragende Leitfähigkeit/Wärmeableitung aufweist; das oberflächenemittierende Laserelement mit vertikalem Resonator; einen Abstandssensor; und ein elektronisches Gerät.[Lösung] Bei dem Verfahren zur Herstellung eines oberflächenemittierenden Laserelements mit vertikalem Resonator gemäß der vorliegenden Technologie: wird ein erstes Substrat durch aufeinanderfolgendes Stapeln einer dielektrischen DBR-Schicht und einer ersten dielektrischen zu bondenden Schicht auf einem Trägersubstrat geschaffen; wird ein zweites Substrat durch aufeinanderfolgendes Stapeln einer Halbleiter-DBR-Schicht, einer Strombegrenzungsschicht, einer aktiven Schicht, einer Kontaktschicht und einer zweiten dielektrischen zu bondenden Schicht auf einem Halbleitersubstrat geschaffen; die dielektrischen zu bondenden Schichten werden miteinander gebondet; und ein gebondeter Körper ...

Monolithischer optisch gepumpter VCSEL mit seitlich angebrachtem Kantenemitter

Semiconductor laser

A semiconductor laser which can be highly modulated and a method for its production are specified. The semiconductor laser has a substrate (1), a semiconductor layer stack (4) and electrical contacts (6, 7). In order to reduce the capacitance, the width of the semiconductor layer stack (4) on the side surfaces (10) is reduced by anisotropic etching. The electrical contacts (6, 7) are located on the same side of the substrate (1) and are applied in the same process step. The semiconductor laser is suitable for monolithic integration with other components. ...

Halbleiterlaserdiodenvorrichtung

Electro-optical device with III-V gain materials and integrated heat sink

An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III - V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III - V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III - V semiconductor gain materials for said given radiation.

An optical device and method of fabricating an optical device

NITRIDE DIODE LASER ELEMENT

SURFACE-EMITTING LASER WITH AN EXTENDED VERTICAL RESONATOR AND PROCEDURE FOR THE PRODUCTION ASSOCIATED LIGHT WITH ANIMAL ENDS OF A COMPONENT

SEMICONDUCTOR LASER

OPTICAL PHASE CONJUGATION LASER DIODE

A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms (168), an electrically and/or optically pumped gain-region (160), (161), (162), a distributed bragg reflecting mirror-stack (165), a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror (164). Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any sti mulated-emission (169) made to undergo amplifying oscillation within the invention's phase-conjugating resonator. Resulting in stablized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intra-cavity chirp that provides for high-speed internal modulation ...

LIGHT EMITTING SEMICONDUCTOR METHODS AND DEVICES

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity ...

Vertical cavity surface emitting laser device and method of making microlens for vertical cavity surface emitting laser device

Nitride semiconductor laser device

There is provided a nitride semiconductor laser device having an improved stability of the lateral mode under high output power and an enhanced lifetime feature, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device is characterized in that: an active layer, a p-side clad layer and a p-side contact layer are stacked in sequence, and a waveguide region shaped like a stripe form whose width is 1-3 mum and whose deepest part is lower than the position, where the thickness of the p-side cladding layer becomes 0.1 mum and higher than a light emitting layer, is formed through etching from the side of the p-side contact layer. Particularly, as an aspect ratio is improved in a far field image, the improved p-side optical waveguide layer includes a projection part of the narrow stripe structure and a p-type nitride semiconductor layer is formed on the projection part, where the projection part of the p-side ...

Semiconductor device

A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

Gan laser element

In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Germanium light-emitting element

A germanium light-emitting device emitting light at high efficiency is provided by using germanium of small threading dislocation density. A germanium laser diode having a high quality germanium light-emitting layer is attained by using germanium formed over silicon dioxide. A germanium laser diode having a carrier density higher than the carrier density limit that can be injected by existent n-type germanium can be provided using silicon as an n-type electrode.

Nitride-based semiconductor device and method for fabricating the same

A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12 ; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10 ; and an electrode 30 provided on the semiconductor multilayer structure 20 . The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32 . The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

Semiconductor optical integrated device

A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.

Semiconductor laser

A semiconductor laser of an embodiment includes: an optical resonator having a first cladding layer, a ring-shaped active layer on the first cladding layer, a ring-shaped second cladding layer on the active layer, a first electrode inside the ring shape on the first cladding layer, a ring-shaped second electrode on the second cladding layer, a first insulating layer between the first cladding layer and the active layer, formed from an inside wall toward an outside wall of the ring shape, where an outside wall side edge thereof is on an inner side than the outside wall, and a second insulating layer between the active layer and the second cladding layer, formed from the inside wall toward the outside wall, where an outside wall side edge thereof is on an inner side than the outside wall; and an optical waveguide optically coupled to the optical resonator.

Semiconductor light emitting device and light emitting apparatus

A semiconductor light emitting device includes a nitride semiconductor layer, an insulating film, a first electrode, and a second electrode which are provided on a substrate. The nitride semiconductor layer includes a second cladding layer having a stripe-shaped ridge. The insulating film is provided on a portion of the second cladding layer including the at least one ridge. The first electrode is provided to contact the upper surface of the ridge. The second electrode is provided to contact the upper surface of the first electrode, the upper surface of the insulating film, and a portion of the second cladding layer exposed from the insulating film.

Method for handling a semiconductor wafer assembly

Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.

Surface emitting laser and method of manufacturing the same

A surface emitting laser includes a lower reflector layer, an active layer , an upper reflector layer , and a wiring. The lower reflector layer, the active layer, and the upper reflector layer form a mesa, a terrace, and a connecting portion. A first groove is provided between the mesa and the terrace. The connecting portion connects the mesa and the terrace, and extends in a direction inclined from <011> direction of the substrate. A high-resistance region is formed in the terrace, in the connecting portion, and in a peripheral portion of the mesa. The wiring is provided on top surfaces of the terrace, the connecting portion, and the mesa. The mesa includes an oxide region extending from a side surface of the mesa and a current confinement structure including an aperture surrounded by the oxide region.

COMPOUND SEMICONDUCTOR, METHOD FOR MANUFACTURING SAME, AND NITRIDE SEMICONDUCTOR

A compound semiconductor has a high electron concentration of 5×10cmor higher, exhibits an electron mobility of 46 cm/V·s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C. 1. A nitride semiconductor having n-type conductivity and containing nitrogen and at least one group 13 element selected from the group consisting of B , Al , Ga and In ,{'sup': 20', '−3', '−3, 'wherein the nitride semiconductor has an electron concentration of 1×10cmor higher and exhibits a specific resistance of 0.3×10Ω·cm or lower.'}2. The nitride semiconductor according to claim 1 , wherein the electron concentration is 2×10cmhigher.3110. The nitride semiconductor according to claim 1 , wherein the nitride semiconductor has a contact resistance of ×Ω·cmor lower against an n-type ohmic electrode metal.4. The nitride semiconductor according to claim 1 , wherein the nitride semiconductor contains oxygen as an impurity at 1×10cmor higher.5. The nitride semiconductor according to claim 4 , wherein the nitride semiconductor has an absorption coefficient of 2000 cmor lower to light having a wavelength region of 405 nm.6. The nitride semiconductor according to claim 4 , wherein the nitride semiconductor has an absorption coefficient of 1000 cmor lower to light having a wavelength region of 450 nm.7. The nitride semiconductor according to claim 1 , wherein the nitride semiconductor has an RMS value of 5.0 nm or less obtained by a surface roughness measurement performed by an AFM.8. The nitride semiconductor according to claim 1 , wherein the at least one group 13 element is Ga.9. The nitride semiconductor according to claim 1 , wherein the nitride semiconductor contains either one of claim 1 , or both of claim 1 , Si and Ge as ...

Integrated Edge-Generated Vertical Emission Laser

Configurations for an edge-generated vertical emission laser that vertically emits light and fabrication methods of the edge-generated vertical emission laser are disclosed. The edge-generated vertical emission laser may include a distributed feedback (DFB) laser structure, a grating coupler, and contact layers. Light may propagate through the DFB laser structure, approximately parallel to the top surface of the edge-generated vertical emission laser and be directed by the grating coupler toward the top surface of the edge-generated vertical emission laser. The light may vertically emit from the edge-generated vertical emission laser approximately perpendicular to the top surface of the edge-generated vertical emission laser. Additionally, the contact layers may be n-metal and p-metal, which may be located on the same side of the edge-generated vertical emission laser. These features of the edge-generated vertical emission laser may facilitate ease of testing and increased options for packaging. 1. An edge-generated vertical emission laser that vertically emits light , comprising:a distributed feedback (DFB) laser structure configured to generate light that propagates parallel to a top surface of the edge-generated vertical emission laser;a grating coupler, configured to receive the generated light from the DFB laser structure and direct the generated light toward a top surface of the edge-generated vertical emission laser that is perpendicular to the top surface of the edge-generated vertical emission laser;an optical element configured to allow light to emit from the top surface of the edge-generated vertical emission laser; anda metal contact on a bottom surface of the edge-generated vertical emission laser, the bottom surface opposite the top surface of the edge-generated vertical emission laser.2. The edge-generated vertical emission laser that vertically emits light of claim 1 , wherein:{'claim-text': ['an n-metal contact on the bottom surface of the edge- ...

Light emitting element array and optical transmission device

A light emitting element array includes plural semiconductor stacking structures and a light screening portion. The plural semiconductor stacking structures each include a light emitting portion and a light receiving portion that receives light propagated in a lateral direction via a semiconductor layer from the light emitting portion. The light screening portion is provided between the plural semiconductor stacking structures to screen light directed from the light emitting portion of one of the semiconductor stacking structures to the light receiving portion of another semiconductor stacking structure.

VERTICAL-CAVITY SURFACE-EMITTING LASER

A vertical-cavity surface-emitting laser, comprising a substrate, wherein bottom n-type DBR mirror, first oxidation confinement layer, n-type guide spacer layer, active region layer, p-type guide spacer layer, second oxidation confinement layer, first spacer layer, third oxidation confinement layer second spacer layer, fourth oxidation confinement layer, third spacer layer, fifth oxidation confinement layer, fourth spacer layer, sixth oxidation confinement layer, fifth spacer layer, seventh oxidation confinement layer, sixth spacer layer, eighth oxidation confinement layer, top p-type DBR mirror, p-type contact layer and p-side electrode are successively stacked on the substrate; and a back surface of the substrate is provided with an n-side electrode. 1101102104105106107108109110111112113114115116117118119120121122123101. A vertical cavity surface emitting laser is characterized by comprising: a substrate () , on which a bottom n-type DBR mirror () , and a first oxidation confinement layer () , a n-type guide spacer layer () , an active region layer () , a p-type guide spacer layer () , a second oxidation confinement layer () , a first spacer layer () , a third oxidation confinement layer () , a second spacer layer () , a fourth oxidation confinement layer () , a third spacer layer () , a fifth oxidation confinement layer () , a fourth spacer layer () , a sixth oxidation confinement layer () , a fifth spacer layer () , a seventh oxidation confinement layer () , a sixth spacer layer () , an eighth oxidation confinement layer () , a top p-type DBR mirror () , a p-type contact layer () and a p-side electrode () , an n-side electrode is disposed on a surface of the substrate ();{'b': '102', 'a bottom n-type DBR mirror () includes a plurality of a first refractive index layers and a plurality of second refractive index layers,the first refractive index layers and the second refractive index layer are AlGaAs layers, the refractive index of the first refractive index ...

Broadband Electro-Absorption Optical Modulator Using On-Chip RF Input Signal Termination

An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

SURFACE EMITTING LASER, SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND DETECTION APPARATUS

A surface emitting laser includes a substrate, a plurality of surface emitting laser elements on a first surface of the substrate, a first electrode electrically connected to a first conductive semiconductor of the surface emitting laser elements; and a second electrode electrically connected to a second conductive semiconductor of the surface emitting laser elements. Each of the surface emitting laser elements includes a first reflecting mirror on the substrate; an active layer on the first reflecting mirror; and a second reflecting mirror on the active layer. When a first contact region in which the first electrode and the first conductive semiconductor are connected to each other is on the first surface or in the first conductive semiconductor of the surface emitting laser elements. The first electrode is electrically connected to the light emitting units. The second electrode is electrically connected to each of the light emitting units. 1. A surface emitting laser comprising:a substrate; a first reflecting mirror on the substrate;', 'an active layer on the first reflecting mirror; and', 'a second reflecting mirror on the active layer;, 'a plurality of surface emitting laser elements on a first surface of the substrate, each of the surface emitting laser elements includinga first electrode electrically connected to a first conductive semiconductor of the surface emitting laser elements; anda second electrode electrically connected to a second conductive semiconductor of the surface emitting laser elements,wherein a first contact region, in which the first electrode and the first conductive semiconductor are connected to each other, is located on the first surface or in the first conductive semiconductor of the surface emitting laser elements,wherein one, or two or more of the surface emitting laser elements are defined as a light emitting unit,wherein the light emitting unit includes a plurality of light emitting units, and the first electrode is electrically ...

Vertical-cavity surface-emitting laser for near-field illumination of an eye

A vertical-cavity surface-emitting laser (VCSEL) includes a semiconductor substrate, a first reflector, a second reflector, a first electrical contact, a second electrical contact, and a through-hole via. The first reflector is disposed on a first side of the semiconductor substrate and the second reflector is disposed between the first reflector and an emission side of the VCSEL. The first and second electrical contacts are disposed on a second side of the semiconductor substrate, opposite the first side, for mounting the VCSEL to a transparent substrate. The through-hole via electrically connects the second electrical contact to the second reflector.

Light emitting device and projector

The light emitting device includes an excitation light source, and a light emitting light source, wherein the light emitting light source includes a substrate, a photonic crystal structure which is provided to the substrate and has a light emitting layer, and an electrode configured to inject an electrical current into the light emitting layer, the excitation light source irradiates the light emitting layer with excitation light, the light emitting layer generates light due to the electrical current injected from the electrode and the excitation light, and in the photonic crystal structure, the light emitted in the light emitting layer resonates in an in-plane direction of the substrate, and a laser beam is emitted in a normal direction of the substrate.

Electro-Optic Modulator Device, Optical Device and Method of Making an Optical Device

An electro-optic modulator device includes a modulation region, a reflecting region, a conductive line and an anti-reflecting region. The modulation region includes a doped region. The reflecting region is over the modulation region. The conductive line is connected to the doped region. The conductive line extends through the reflecting region. The anti-reflecting region is on an opposite surface of the modulation region from the reflecting region.

Semiconductor Laser with Cathode Metal Layer Disposed in Trench Region

A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.

Semiconductor optical device

A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.

Rigid High Power and High Speed Lasing Grid Structures

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an epitaxial material comprising a mesa structure in combination with an electrical waveguide, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure. 1. An apparatus comprising:an electrical waveguide;an epitaxial material comprising an active mesa structure, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure;a substrate;a contact layer that extends beneath the active mesa structure and is positioned above the substrate; anda structure separated from the active mesa structure, wherein the structure provides a contact that shorts the structure to the contact layer to provide a path for a current flow from the electrical waveguide to deliver energy to the laser regions;wherein the electrical waveguide is configured to provide the current flow to the laser regions and the structure via a plurality of electrical waveguide contacts, the electrical waveguide contacts comprising a first contact for electrical connection with the laser regions and a second contact for electrical connection with the structure contact; andwherein the contact layer is adapted to carry a current load from the electrical waveguide and spread current horizontally through the contact layer to the active mesa structure including interior laser region portions of the active mesa structure for injecting the laser regions with current to produce lasing from the laser regions.2. The apparatus of wherein the ...

MULTI-WAVELENGTH LASER AND WAVELENGTH CONTROL METHOD

A multi-wavelength laser and a wavelength control method are disclosed. The multi-wavelength laser includes a waveguide, a first electrode, and a second electrode. The first electrode and the second electrode are disposed on the waveguide. The first electrode is electrically isolated from the second electrode. The first electrode includes a plurality of sub-electrodes, and every two adjacent sub-electrodes are electrically isolated. The second electrode is configured to amplify an optical signal in the waveguide by loading a current. At least one sub-electrode is configured to adjust a wavelength of the optical signal in the waveguide by loading a current or a voltage. 1. A multi-wavelength laser , comprising:a waveguide;a first electrode disposed on the waveguide, wherein the first electrode comprises a plurality of sub-electrodes, and every two adjacent sub-electrodes are electrically isolated; anda second electrode configured to amplify an optical signal in the waveguide by loading a current, wherein the first electrode and second electrode are electrically isolated,wherein at least one of the sub-electrodes is configured to control a wavelength range of the optical signal in the waveguide by loading a current or a voltage.2. The multi-wavelength laser according to claim 1 , wherein each sub-electrode has a different length.3. The multi-wavelength laser according to claim 1 , wherein the first electrode has a first length that is a sum of lengths of all the sub-electrodes claim 1 , wherein the second electrode has a second length and a ratio of the first length to a sum of the first length and the second length is less than or equal to 12%.4. The multi-wavelength laser according to claim 1 , wherein the first electrode is disposed on one side of the second electrode claim 1 , or the first electrode is disposed on two sides of the second electrode.5. The multi-wavelength laser according to claim 1 , further comprising:a plurality of switches corresponding to the ...

WAVELENGTH DIVISION MULTIPLEXING OPTICAL MODULE

Examples herein relate to optical modules. In particular, implementations herein relate to optical modules that include top-emitting VCSELs and/or top-entry photodetectors. The optical modules include a first interposer having opposing first and second sides and a second interposer having opposing first and second sides. The optical modules include a plurality of top-emitting vertical-cavity surface-emitting lasers (VCSELs) coupled to the second interposer and a plurality of electrical conductors forming electrical paths between electrical contacts of the top-emitting VCSELs and the second side of the second interposer. The VCSELs are configured to emit optical signals having different wavelengths. The optical signals are configured to be combined and transmitted over a single optical fiber. 1. An optical transmitter module comprising:a first interposer having opposing first and second sides;a second interposer having opposing first and second sides;a plurality of top-emitting vertical-cavity surface-emitting lasers (VCSELs) coupled to the second interposer, the top-emitting VCSELs configured to emit optical signals having different wavelengths through the first interposer, the optical signals configured to be combined and transmitted over a single optical fiber; anda plurality of electrical conductors forming electrical paths between electrical contacts of the top-emitting VCSELs and the second side of the second interposer.wherein the second interposer includes a plurality of cavities, wherein each of the top-emitting VCSELs is disposed in a respective cavity, and wherein each of the electrical conductors extends through the second interposer to electrically couple respective first pads disposed on the first side of the second interposer to a respective solder bump on the second side of the second interposer, each of the first pads electrically coupled to one of the electrical contacts of a respective top-emitting VCSEL.2. The optical module of claim 1 , wherein ...

Devices with ultra-small vertical cavity surface emitting laser emitters incorporating beam steering

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

Tunable Waveguide Devices

Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core.

Laterally-Injected Light-Emitting Diode and Laser Diode

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Monolithic nano-cavity light source on lattice mismatched semiconductor substrate

An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects

Laser device with a stepped graded index separate confinement heterostructure

Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.

Semiconductor laser

A semiconductor laser includes a contact carrier having electrical contact surfaces to electrically contact a semiconductor layer sequence, an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier and a plurality of capacitors, wherein the connecting line is located on or in the semiconductor layer sequence, at least two of the capacitors are present, the capacitances of which differ by at least a factor of 50, the capacitor having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply, the capacitor having the smaller capacitance directly electrically connects to the active zone, and a resistor is arranged between the capacitor having the larger capacitance and the active zone, the resistor having a resistance of at least 100 Ω.

Method of manufacturing surface emitting laser

A method of manufacturing a surface emitting laser includes: preparing a substrate on which a lower reflector layer, an active layer and an upper reflector layer are formed in this order from the bottom, each of the lower reflector layer and the upper reflector layer including a semiconductor multilayer film; forming an insulating film on the upper reflector layer; cleaning the substrate using isopropyl alcohol after the forming; patterning a photoresist by applying the photoresist on the insulating film and exposing the photoresist, after the cleaning; and forming a high resistance region by implanting ions into portions of the lower reflector layer, the active layer and the upper reflector layer exposed from the photoresist, after the patterning; wherein the cleaning includes cleaning the substrate with a liquid of the isopropyl alcohol and drying the substrate in a vapor of the isopropyl alcohol.

VERTICAL CAVITY SURFACE EMITTING LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME

A vertical cavity surface emitting laser (VCSEL) device and a method for manufacturing the VCSEL device without wire bonding process for the topmost positive electrode are disclosed. The device includes epitaxial layer, ohmic contact layer, positive electrode, first insulating layer, conductive layer, and negative electrode. The epitaxial layer includes first and second opposing surfaces, and sidewalls connected to first and second surfaces. The ohmic contact layer is disposed on the first surface and the positive electrode connected thereto is disposed on the second surface. The first insulating layer is disposed on the second surface and extends to the ohmic contact layer along the sidewall. The conductive layer is disposed on the first insulating layer corresponding to the sidewall/sidewalls which carry power for the positive electrode. 1. A vertical cavity surface emitting laser (VCSEL) device , comprising:an epitaxial layer comprising a first surface, a second surface opposite to the first surface, and at least one sidewall connected to the first surface and the second surface;an ohmic contact layer disposed on the first surface;a negative electrode disposed on a portion of the second surface;a first insulating layer disposed on a portion of the second surface without the negative electrode, and extending to the ohmic contact layer along the at least one sidewall;a positive electrode disposed on the first insulating layer corresponding to the second surface, the positive electrode and the negative electrode spaced apart; anda conductive layer disposed on the first insulating layer corresponding to the at least one sidewall;wherein the positive electrode is connected to the ohmic contact layer through the conductive layer, the negative electrode is spaced from the positive electrode.2. The VCSEL device of claim 1 , wherein the positive electrode surrounds the negative electrode;or, the positive electrode comprises two separate portions, and the two separate ...

Semiconductor Optical Element

A first conduction type first cladding layer and a second conduction type second cladding layer are arranged on the two sides in the vertical direction of a core portion having a multiple quantum-well structure, and a first conduction type third cladding layer and a second conduction type fourth cladding layer are arranged on the two sides in the horizontal direction of the core portion. A first electrode connected to the third cladding layer is formed. A second electrode connected to the fourth cladding layer is formed. A reverse bias is applied between the first and third cladding layers and the second and fourth cladding layers.

BREATHABLE AND WATERPROOF MICRO LIGHT EMITTING DIODE DISPLAY

A micro light emitting diode display includes a display module and a hydrophobic layer. The display module includes a substrate, an electrode layer, and a micro light emitting diode device. The substrate has a first surface, a second surface opposite to the first surface and at least one air passage extending from the first surface to the second surface. The electrode layer is disposed on and in contact with the first surface of the substrate. The air passage has an opening on the first surface of the substrate, and the electrode layer is spaced apart from the opening. The micro light emitting diode device is disposed on the electrode layer and has a light emitting area that is less than or equal to 2500 μm. The hydrophobic layer at least partially covers a side of the display module. 1. A micro light emitting diode display , comprising: a substrate having a first surface, a second surface opposite to the first surface, and at least one air passage extending from the first surface to the second surface;', 'an electrode layer disposed on and in contact with the first surface of the substrate, wherein the at least one air passage has an opening on the first surface of the substrate, and the electrode layer is spaced apart from the opening; and', {'sup': '2', 'a micro light emitting diode device disposed on the electrode layer and having a light emitting area that is less than or equal to 2500 μm; and'}], 'a display module, comprisinga first hydrophobic layer at least partially covering a first side of the display module.2. The micro light emitting diode display of claim 1 , wherein the first side of the display module is a display side from which light emitted by the micro light emitting diode device exits the display module.3. The micro light emitting diode display of claim 1 , further comprising:a hydrophilic layer at least partially covering a second side of the display module, the second side being opposite to the first side.4. The micro light emitting diode ...

Laser element

A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer, a back conductive structure opposite to the front conductive structure, which comprises a plurality of detecting electrodes separated from each other, and a via hole extending from the back conductive structure to the conductive layer, wherein the plurality of detecting electrodes electrically connected to the conductive layer through the via hole

Surface-mount compatible vcsel array

A VCSEL/VECSEL array design is disclosed that results in arrays that can be directly soldered to a PCB using conventional surface-mount assembly and soldering techniques for mass production. The completed VCSEL array does not need a separate package and no precision sub-mount and flip-chip bonding processes are required. The design allows for on-wafer probing of the completed arrays prior to singulation of the die from the wafer. Embodiments relate to semiconductor devices, and more particularly to multibeam arrays of semiconductor lasers for high power and high frequency applications and methods of making and using the same.

VERTICAL CAVITY SURFACE EMITTING LASER DEVICES

A VCSEL device includes a substrate and a laser cavity that includes a gain section disposed between first and second reflectors. The VCSEL device is operable to emit light through a first end of the VCSEL device. The VCSEL device includes an anode surface mount contact and a cathode surface mount contact, each which is disposed at a second end of the VCSEL device opposite the first end of the VCSEL device. 1. A VCSEL device comprising:a substrate;a laser cavity over the substrate, the laser cavity including a gain section disposed between first and second reflectors, wherein the VCSEL device is operable to emit light through a first end of the VCSEL device, the first end being closer to the first reflector than the second reflector;an anode surface mount contact; anda cathode surface mount contact,wherein each of the anode and cathode surface mount contacts is disposed at a second end of the VCSEL device opposite the first end of the VCSEL device, the VCSEL device further including:a first electrical connection at the first end of the VCSEL device, wherein the first electrical connection is routed to the anode surface mount contact by way of an opening through the substrate; anda second electrical connection at a surface of the second reflector, wherein the second electrical connection is routed to the cathode surface mount contact by way of an opening through the substrate.2. The VCSEL device of wherein the first electrical connection is routed to the anode surface mount contact by way of a first opening through the substrate claim 1 , and wherein the second electrical connection is routed to the cathode surface mount contact by way of a different second opening through the substrate.3. The VCSEL device of including a dielectric layer that separates the first electrical connection from the gain region claim 1 , the substrate and the second reflector.4. The VCSEL device of wherein the dielectric layer extends partially along a surface of the substrate near the ...

Semiconductor laser

A semiconductor laser operable by a reduced bias is disclosed. The semiconductor laser includes a substrate, an active area including a quantum well structure, an emitter area and a collector area, where those areas laterally extend on the substrate as the emitter and collector areas sandwich the active area therebetween. The emitter area and the collector area show the conduction type same to each other. The quantum well structure may cause the radiative transition from a higher energy band to a lower energy band, while, the emitter area has a conduction band whose level is equal to or higher than the higher energy band in the quantum well structure and the collector area in a level of the conduction band thereof is equal to or lower than the lower energy band of the quantum well structure.

Optical device and method for manufacturing optical device

An optical device includes lower cladding layer formed of an amorphous insulator on a substrate; a first cladding region, an active region, and a second cladding region formed on the lower cladding layer, one of the first cladding region and the second cladding region being formed on a monocrystal; an upper cladding layer formed of an insulator on the active region; a first electrode connected with the first cladding region; and a second electrode connected with the second cladding region.

SURFACE EMITTING LASER AND METHOD OF MANUFACTURING THE SAME

A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region. 1. A surface emitting laser comprising:a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, the semiconductor layer including a light emitting region; anda first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween,the first semiconductor layer having a high dislocation portion disposed outside the light emitting region, the high dislocation portion having an average dislocation density higher than an average dislocation density of the light emitting region.2. The surface emitting laser according to claim 1 , further comprising a first electrode and a second electrode that are directed to application of a voltage to the semiconductor layer.3. The surface emitting laser according to claim 2 , wherein the second electrode includes a light-transmissive electrically conductive material.4. The surface emitting laser according to claim 1 , further comprising a support substrate claim 1 ,wherein the first light reflecting layer, the first semiconductor layer, the active layer, the second semiconductor layer, and the second light reflecting layer are provided in an order from a ...

Rigid High Power and High Speed Lasing Grid Structures

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an active mesa structure in combination with an electrical waveguide, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure. 1. A multi-laser semiconductor apparatus comprising:an electrical waveguide;an active mesa structure, wherein the active mesa structure comprises a plurality of semiconductor laser regions within the active mesa structure itself, each semiconductor laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other semiconductor laser regions of the active mesa structure;a substrate;a contact layer that extends beneath the active mesa structure and is positioned above the substrate; anda structure separated from the active mesa structure, wherein the structure provides a contact that shorts the structure to the contact layer to provide a path for a current flow from the electrical waveguide to deliver energy to the semiconductor laser regions;wherein the electrical waveguide is configured to provide the current flow to the semiconductor laser regions and the structure via a plurality of electrical waveguide contacts, the electrical waveguide contacts comprising a first contact for electrical connection with the semiconductor laser regions and a second contact for electrical connection with the structure contact; andwherein the contact layer is adapted to carry a current load from the electrical waveguide and spread current horizontally through the contact layer to the active mesa structure including interior semiconductor laser region portions of the active mesa structure for injecting the ...

Semiconductor optical device

A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32 A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x 2 , a lattice constant along a z-axis is z 2 , a length along an x-axis in one unit of crystals constituting the contact layer 34 is x c ′, and a length along the z-axis is z c ′, (z c ′/x c ′)>(z 2 /x 2 ) is satisfied.

Semiconductor Laser Diode

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator. 117-. (canceled)18. A semiconductor laser diode comprising:a first resonator; anda second resonator,wherein the first and second resonators have parallel resonator directions along a longitudinal direction and are monolithically integrated into the semiconductor laser diode,wherein the first resonator comprises at least a part of a semiconductor layer sequence comprising an active layer and an active region configured to be electrically pumped and to generate a first light,wherein the longitudinal direction is parallel to a main extension plane of the active layer,wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light and configured to produce a second light which is partially emitted outwards from the second resonator,wherein the second resonator is at least part of a growth substrate on which the semiconductor layer sequence of the first resonator has been grown, and/orwherein the first and second resonators are coupled to each other by a connecting layer which at least partially comprises a transparent conductive oxide and/or a patterned ...

LASER DIODE MODULE

A laser diode module is described herein. In accordance with a first exemplary embodiment, the laser diode module includes a first semiconductor die including at least one electronic switch, and a second semiconductor die including at least one laser diode. The second semi-conductor die is bonded on the first semiconductor die using a chip-on-chip connecting technology to provide electrical connection between the electronic switch and the laser diode. 1. A laser diode module comprising:a first semiconductor die including at least one electronic switch; anda second semiconductor die including at least one laser diode,wherein the first semiconductor die is a first bare die embedded in an intermediate level of a circuit board, andwherein the second semiconductor die is arranged in a top or a bottom level of the circuit board.2. The laser diode module of claim 1 , further comprising at least one buffer capacitor embedded in the circuit board.3. The laser diode module of claim 2 , wherein the at least one buffer capacitor is included in the first semiconductor die.4. The laser diode module of claim 2 , wherein the at least one buffer capacitor is included in a third semiconductor die claim 2 , wherein the third semiconductor die is a second bare die that is embedded in the intermediate level of the circuit board.5. The laser diode module of claim 4 , wherein the third semiconductor die is arranged on a different level of the circuit board from the second semiconductor die.6. The laser diode module of claim 4 , wherein the third semiconductor die is arranged on a first metallization layer of the circuit board.7. The laser diode module of claim 4 ,wherein the first semiconductor die is arranged between a first metallization layer and a second metallization layer of the circuit board, andwherein the third semiconductor die is arranged between the first metallization layer and the second metallization layer of the circuit board.8. The laser diode module of claim 2 , wherein ...

Semiconductor modification process for conductive and modified electrical regions and related structures

There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Nitride semiconductor multilayer structure, light emitting element, light source apparatus, and method for producing nitride semiconductor multilayer structure

A nitride semiconductor multilayer structure includes a first nitride semiconductor layer; a second nitride semiconductor layer; and a third nitride semiconductor layer formed between the first nitride semiconductor layer and the second nitride semiconductor layer. The third nitride semiconductor layer includes a first region and a second region that surrounds the first region in a same plane, and an indium content of the second region is lower than an indium content of the first region.

Method for fabricating surface emitting laser

A method for fabricating a surface emitting laser includes the steps of: preparing an epitaxial substrate including a substrate and a laminate disposed on the substrate, the laminate including a Bragg reflector and an active layer; forming a mask for defining a semiconductor post on the epitaxial substrate; after forming the mask, placing the epitaxial substrate in an etching apparatus with an end point detector including an optical device; carrying out plasma etching of the epitaxial substrate by supplying a gas including boron chloride and chlorine in the etching apparatus; and stopping the plasma etching in response to an end point detection from the end point detector of the etching apparatus. The optical device of the end point detector detects an end point of a process through a viewport of the etching apparatus. The plasma etching is carried out in a process pressure of one Pascal or less.

Photonic integrated circuit having improved electrical isolation between n-type contacts

A photonic integrated circuit including first and second opto-electronic devices that are fabricated on a semiconductor wafer having an epitaxial layer stack including an n-type indium phosphide-based contact layer that is provided with at least one selectively p-type doped tubular-shaped region for providing an electrical barrier between respective n-type contact regions of the first and second opto-electronic devices that are optically interconnected by a passive optical waveguide that is fabricated in a non-intentionally doped waveguide layer including indium gallium arsenide phosphide, the non-intentionally doped waveguide layer being arranged on top of the n-type contact layer, wherein a first portion of the at least one selectively p-type doped tubular-shaped region is arranged underneath the passive optical waveguide between the first and second opto-electronic devices. An opto-electronic system including the photonic integrated circuit.

Light emitting device and method of manufacturing same, and projector

A light emitting device is provided that makes it possible to reduce absorption of light by an electrode. The light emitting device includes a substrate, and a laminated structure provided to the substrate, wherein the laminated structure includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between the substrate and the active layer, a recessed part is disposed at an opposite side to the substrate side of the laminated structure, the recessed part is provided with a low refractive-index part lower in refractive index than the second semiconductor layer, a depth of the recessed part is no larger than a distance between a surface at an opposite side to the substrate side of the laminated structure and the active layer, and an electrode is disposed at an opposite side to the substrate side of the laminated structure.

Semiconductor laser apparatus and semiconductor laser device

A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.

Method for a gan vertical microcavity surface emitting laser (vcsel)

Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials.

Vertical-cavity surface-emitting laser

A vertical-cavity surface-emitting laser (VCSEL) including a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer, a ring-shaped trench passing through the upper mirror, the aperture forming layer, and the active layer to define an isolation region therein, and a plurality of oxidation holes disposed in the isolation region surrounded by the trench, and passing through the upper mirror and the aperture forming layer.

Nitride semiconductor element

This invention aims at providing a nitride semiconductor causing no element breakdown even in driving under a high current density. A nitride semiconductor element is provided with a nitride semiconductor active layer made of Al x Ga (1-x) N and a composition change layer made above the nitride semiconductor active layer and made of Al x3 Ga (1-x3) N in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer. The composition change layer has a first composition change region having a thickness larger than 0 nm and smaller than 400 nm and a second composition change region which is a region further away from the nitride semiconductor active layer than the first composition change region and in which the change rate of the Al composition ratio x3 in the thickness direction of the film thickness of the composition change layer is higher than that of the first composition change region, in which, in the first composition change region, the Al composition ratio continuously changes in the thickness direction of the film thickness.

Devices incorporating integrated detectors and ultra-small vertical cavity surface emitting laser emitters

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

INTEGRATED SEMICONDUCTOR OPTICAL AMPLIFIER AND LASER DIODE AT VISIBLE WAVELENGTH

An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.

P-side layers for short wavelength light emitters

A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of Al xhigh Ga 1-xhigh N doped with a p-type dopant and Al xlow Ga 1-xlow N doped with the p-type dopant, where x low ≦x high ≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

Increase VCSEL Power Using Multiple Gain Layers

System and method for increasing VCSEL power by using multiple gain layers 10, separated by insulated layers 12, bounded on top and bottom by DBR mirrors 11, connected in parallel through electrodes embedded within, resulting in a modified VCSEL system of higher power, lower resistive loss, higher device speed, and higher beam quality.

VCSEL DEVICE WITH MULTIPLE STACKED ACTIVE REGIONS

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions. 1. A VCSEL array device , comprising:a semiconductor substrate; a first mesa on top of the semiconductor substrate, each first mesa forming a first side and including a lower mirror in contact with the semiconductor substrate,', 'an upper mirror,', 'a plurality of epitaxially stacked active regions electrically joined with reverse tunnel junctions, each active region generating a light and positioned between the lower mirror and the upper mirror, and', 'a first metal contact pad in electrical contact with the upper mirror;, 'two or more VCSEL devices, each VCSEL device comprisingone or more short-circuited devices, each-short circuited device among the one or more short-circuited devices forming a second mesa on top of the semiconductor substrate, each second mesa forming a second side and including a second metal contact pad electrically connected to the semiconductor substrate;a plurality of metal heat sink structures deposited over each VCSEL device and each short circuited device, a first set of heat sink ...

Low current, high power laser diode bar

A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivity type that is between the first laser diode stack and the second laser diode stack.

IMAGE DISPLAY DEVICE

Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer. 1. An image display device comprising: a plurality of micro light emission elements disposed in a pixel region; an external coupling portion disposed in an external coupling region; and a drive circuit substrate ,the plurality of micro light emission elements each including a compound semiconductor in which a first conductive layer, a light emission layer, and a second conductive layer having a conductivity type opposite to a conductivity type of the first conductive layer are sequentially laminated from a side of a light emitting surface,the plurality of micro light emission elements each further including, on a surface opposite to the light emitting surface, a second electrode coupled to the second conductive layer, the second electrode being coupled to a corresponding second drive electrode on the drive circuit substrate,the compound semiconductor and an external coupling electrode being disposed in the external coupling region, and the external coupling portion being electrically coupled to a corresponding electrode on the drive circuit substrate via the external coupling ...

LASER DEVICE

A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion. 1. A semiconductor device , comprising:a substrate having a first side surface and a second side surface;an epitaxial stack disposed on the substrate and having a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface;a first connection layer between the epitaxial stack and the substrate, and having a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface; anda first electrode disposed on the first connection layer and being in contact with the first protruding portion and the second protruding portion.2. The semiconductor device of claim 1 , wherein the first electrode comprisesa body portion; anda surrounding portion connected to the body portion and covering the first lateral surface and the second lateral surface.3. The semiconductor device of claim 2 , further comprising a second electrode disposed on the epitaxial stack claim 2 , wherein the first electrode and the second electrode are disposed on the same side of the substrate.4. The semiconductor device of claim ...

Micro light emission element and image display device

Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.

Compound semiconductor and method for manufacturing same

A nitride compound semiconductor having a low resistivity that is conventionally difficult to be manufactured is provided. Since the nitride compound semiconductor exhibits a high electron mobility, a high-performance semiconductor device may be configured. The present invention may provide, at a high productivity, a group 13 nitride semiconductor of an n-type conductivity that may be formed as a film on a substrate having a large area size and has a mobility of 70 to 140 cm2/(V·s) by a pulsed sputtering method performed in a process atmosphere at room temperature to 700° C.

Iii-v photonic integrated circuits on silicon substrate

A semiconductor device including a substrate structure including a semiconductor material layer that is present directly on a buried dielectric layer in a first portion of the substrate structure and an isolation dielectric material that is present directly on the buried dielectric layer in a second portion of the substrate structure. The semiconductor device further includes a III-V optoelectronic device that is present in direct contact with the isolation dielectric material in a first region of the second portion of the substrate structure. A dielectric wave guide is present in direct contact with the isolation dielectric material in a second region of the second portion of the substrate structure.

Vertical Emitters Integrated on Silicon Control Backplane

A method for manufacturing includes fabricating an array ( 22 ) of vertical emitters ( 32 ) by deposition of multiple epitaxial layers on a III-V semiconductor substrate ( 20 ), and fabricating control circuits ( 30 ) for the vertical emitters on a silicon substrate ( 26 ). Respective front sides ( 52 ) of the vertical emitters are bonded to the silicon substrate in alignment with the control circuits. After bonding the respective front sides, the III-V semiconductor substrate is thinned away from respective back sides ( 50 ) of the vertical emitters, and metal traces ( 78 ) are deposited over the vertical emitters to connect the vertical emitters to the control circuits.

LASER LIGHT SOURCE UNIT

A housing is provided with a groove Vinto which an electrode of a laser oscillation element and an electrode of a laser oscillation element are inserted. Inside the groove V, there exists a conductive layer configured to electrically connect the electrode 3of the laser oscillation element and the electrode of the laser oscillation element 1. A laser light source unit comprising:first and second laser oscillation elements; anda housing configured to hold the first and second laser oscillation elements,whereineach of the first and second oscillation elements has a first electrode and a second electrode,the housing is provided with a groove into which the second electrode of the first laser oscillation element, and the first electrode of the second laser oscillation element are inserted, andinside the groove, a conductive layer exists, the conductive layer being configured to electrically connect the second electrode of the first laser oscillation element, and the first electrode of the second laser oscillation element.2. The laser light source unit according to claim 1 , wherein the conductive layer is inserted into the groove from an outside of the housing.3. The laser light source unit according to claim 1 , wherein inside the groove claim 1 , an insulating layer configured to insulate between the housing claim 1 , and the second electrode of the first laser oscillation element and the first electrode of the second laser oscillation element exists.4. The laser light source unit according to claim 3 , wherein the insulating layer is inserted into the groove from the outside of the housing.5. The laser light source unit according to claim 1 , further comprising a fixing member configured to fix the first and second laser oscillation elements to the housing.6. The laser light source unit according to claim 1 , wherein the first and second laser oscillation elements are joined to the housing by solder.7. The laser light source unit according to claim 1 , comprising a ...

SURFACE PLASMON INFRARED NANO PULSE LASER HAVING MULTI-RESONANCE COMPETITION MECHANISM

A surface plasmon infrared nano-pulse laser having a multi-resonance competition mechanism, consisting of the four parts of a surface plasmon nano-pin resonance chamber (), a spacer layer (), a gain medium (), and a two-dimensional material layer (). The surface plasmon nano-pin resonance chamber () consists of a metal nano rod () and one or more nano sheets () grown thereon, the surface plasmon nano-pin resonance chamber () and the gain medium () being isolated by the isolating layer (), and the two-dimensional material layer () covering a surface of the surface plasmon nano-pulse laser; positive and negative electrodes () are located at two ends of the surface plasmon nano-pulse laser, and a layer of a two-dimensional material having a feature of saturatable absorption is introduced to a surface of the nano-pin resonance chamber. 1. A surface plasmon infrared nano pulse laser having a multi-resonance competition mechanism , comprising four parts of a surface plasmon nano-pin resonance chamber with a multi-resonance mechanism competition effect , a spacer layer , a gain medium , and a two-dimensional material layer; wherein the surface plasmon nano-pin resonance chamber comprising a metal nano rod and one or more nano sheets grown thereon , the surface plasmon nano-pin resonance chamber and the gain medium being isolated by the spacer layer , the two-dimensional material layer covering a surface of the surface plasmon infrared nano pulse laser; a positive electrode and a negative electrode located at two ends of the surface plasmon infrared nano pulse laser.2. The surface plasmon infrared nano pulse laser having the multi-resonance competition mechanism according to claim 1 , wherein claim 1 , materials of the metal nano rod and the nano sheets are both metal materials with a surface plasmonic characteristic claim 1 , the metal nano rod has a length ranging from 20 nm to 30 microns claim 1 , a diameter ranging from 10 nm to 200 nm; the nano sheets having a SPR ...

Vertical cavity surface-emitting laser, manufacturing method thereof, and inspection method thereof

A vertical cavity surface-emitting laser includes a first insulating film provided on a semiconductor layer, the first insulating film having a recess, an identification mark provided in the recess of the first insulating film, the identification mark being formed of a metal layer, and a second insulating film provided over the semiconductor layer and covering the first insulating film and the metal layer. The metal layer has an upper surface located at a height equal to or lower than an upper surface of the first insulating film.

Light Emitting Device And Projector

A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and an electrode disposed at an opposite side to the substrate of the laminated structure, wherein the columnar parts have a light emitting layer, the columnar parts are disposed between the electrode and the substrate, light generated in the light emitting layer propagates through the plurality of columnar parts to cause laser oscillation, and the electrode is provided with a hole.

Semiconductor light emitting element and method for fabricating the same

A surface emitting laser element includes a mesa structure of a semiconductor multilayer film formed to have a convex cross section. A first insulating film of an inorganic material is formed on a side surface of the mesa structure, and on the first insulating film, a resin layer is formed to fill a space surrounding the mesa structure. A second insulating film of an inorganic material is formed on the resin layer, and an upper contact electrode with an electrode opening exposing part of the top surface of the mesa structure is formed on the second insulating film and the mesa structure. With this construction, oxidation and alteration of the resin layer during fabrication of the element can be suppressed to bury the mesa structure with no gap created. Therefore, a semiconductor light-emitting element with high reliability can be provided.

Optical communications apparatus

A optical communications apparatus has an optical transmitter (T) with a signal source (10) for supplying a data signal comprising data to be transmitted, a photo-emitter (40) for emitting photons, a spin injector (30) supplying spin-polarised charge carriers for causing the photo-emitter to emit photons having a polarisation determined by the spin-polarisation of te charge carriers supplied by the spin injector (30), and a controller (20) for controlling the spin injector to cause the spin polarisation of the charge carriers supplied by the spin polarisation of the charge carriers supplied by the spin injector (30) to be controlled in accordance with data to be transmitted such that, in operation, the photo-emitter (40) provides an optical signal in which the polarisation of the photons emitted by the photo-emitter is modulated on the basis of data supplied by the signal sources; and a receiver (R) with a polarisation of photons received from the photo-emitter (40) and a data extractor (24) for extracting data transmitted in the optical signal provided by the photo-emitter on the basis of the photon polarisations determined by the polarisation detector.

Optical communications apparatus

A optical communications apparatus has an optical transmitter (T) with a signal source (10) for supplying a data signal comprising data to be transmitted, a photo-emitter (40) for emitting photons, a spin injector (30) supplying spin-polarised charge carriers for causing the photo-emitter to emit photons having a polarisation determined by the spin-polarisation of te charge carriers supplied by the spin injector (30), and a controller (20) for controlling the spin injector to cause the spin polarisation of the charge carriers supplied by the spin polarisation of the charge carriers supplied by the spin injector (30) to be controlled in accordance with data to be transmitted such that, in operation, the photo-emitter (40) provides an optical signal in which the polarisation of the photons emitted by the photo-emitter is modulated on the basis of data supplied by the signal sources; and a receiver (R) with a polarisation of photons received from the photo-emitter (40) and a data extractor (24) for extracting data transmitted in the optical signal provided by the photo-emitter on the basis of the photon polarisations determined by the polarisation detector.

一种基于表面光栅的dfb激光器

本发明公开了一种基于表面光栅的DFB激光器。该激光器为脊形波导结构，自下而上包含：衬底、下波导盖层、有源层、上波导盖层；在脊形波导表面上刻蚀有布拉格光栅；脊区采用高折射率材料，使光栅具有大的耦合系数；脊形波导上面不做电极，电极位于脊形波导两侧；在脊形波导与两侧电极之间刻蚀有沟槽；该激光器的下波导盖层中含有一个或多个电流限制区，或者是在上波导盖层中制作一个掩埋隧道结来限制电流。本发明不需要材料的二次外延生长，制作工艺简便，因而降低了器件的制作成本，提高了器件的可靠性。此外本发明可以获得大的耦合系数，因而在激光器腔长很短的情况下能获得低阈值以及高速直调的激光器性能。

VERTICAL CAVITY SURFACE EMITTING LASER, HEAD GIMBAL ASSEMBLY, AND FABRICATION PROCESS

Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser (VCSEL), a head gimbal assembly for mounting a VCSEL, devices incorporating such articles, and to a process for forming a VCSEL. In an embodiment, a VCSEL device provided. The VCSEL device includes a chip for mounting on a slider, the chip having a plurality of surfaces and a notch, the plurality of surfaces comprising: a bottom surface for facing the slider; a top surface opposite the bottom surface; and a plurality of side surfaces, wherein the notch forms a recessed edge spaced away from the bottom surface and toward the top surface, the notch having a shoulder, a side, and an angle (θ1) between the shoulder and the side. The VCSEL device further includes two laser diode electrodes positioned in any combination on one or more of the plurality of surfaces of the chip. 1. A vertical cavity surface emitting laser (VCSEL) device , comprising: a bottom surface for facing the slider;', 'a top surface opposite the bottom surface; and', 'a plurality of side surfaces; and, 'a chip for mounting on a slider, the chip having a plurality of surfaces and a notch, the plurality of surfaces comprisingtwo laser diode electrodes positioned in any combination on one or more of the plurality of surfaces,wherein the notch forms a recessed edge spaced away from the bottom surface and toward the top surface, the notch having a shoulder, a side, and an angle (θ1) between the shoulder and the side.2. The VCSEL device of claim 1 , wherein:the notch has a depth of about 10 μm to about 50 μm;the angle (θ1) is larger than 90° and smaller than 180°; ora combination thereof.3. The VCSEL device of claim 2 , wherein the angle (θ1) is from about 100° to about 160°.4. The VCSEL device of claim 1 , wherein the angle (θ1) is 180° claim 1 , and the shoulder and the side form a continuously flat surface.5. The VCSEL device of claim 1 , wherein the shoulder is substantially parallel to the bottom surface ...

Vertical-cavity surface emitting laser

본 발명에 따른 면 발광 레이저는 기판 및 상기 기판 상에 성장된 제1 미러와, 상기 제1 미러 상에 성장되며 상기 제1 미러와 광을 공진시키는 제2 미러와, 상기 제1 및 제2 미러의 사이에 위치되며 상기 광을 생성 및 증폭시키는 활성층과, 상기 활성층 상에 성장되며 상기 활성층에 전류를 인가하는 상부 전극 및 상기 기판 상에 형성되며 상기 활성층에 전류를 인가하기 위한 하부 전극과, 상기 활성층 및 제2 미러가 매몰되게 상기 제1 미러 상에 형성된 평탄화용 폴리머와, 상기 상부 전극으로부터 상기 평탄화용 폴리머의 상부에 노출되게 수직 상향 연장된 제1 외부 단자 및 상기 하부 전극으로부터 상기 평탄화용 폴리머의 상부에 일면이 노출되게 연장된 제2 외부 단자를 포함한다. The surface-emitting laser according to the present invention includes a substrate and a first mirror grown on the substrate, a second mirror grown on the first mirror and resonating light with the first mirror, and the first and second mirrors. An active layer disposed between the active layer to generate and amplify the light, an upper electrode grown on the active layer to apply a current to the active layer, and a lower electrode formed on the substrate to apply current to the active layer; The planarizing polymer formed on the first mirror so that the active layer and the second mirror are buried, the first external terminal extending vertically upwardly to be exposed to the upper part of the planarizing polymer from the upper electrode, and the planarizing polymer from the lower electrode It includes a second external terminal extending to expose one surface on the top of. 면 발광 레이저, 공진, 반도체 Surface emitting laser, resonance, semiconductor

Monolithic Diode Laser Arrangement

본 발명은 모놀리식 다이오드 레이저 어레인지먼트(monolithic diode laser arrangement)(100)에 관한 것으로, 공동 캐리어 기판상에 나란히 배치된 다수의 개별 이미터(101)를 포함하고, 상기 개별 이미터들은 각각 전기 접촉을 위한 콘택 윈도우(contact window)(19, 20)를 포함하며, 상기 콘택 윈도우들은 각각의 개별 이미터(101)에서 상기 캐리어 기판에 마주 놓인 정면에 배치되어 있다. 본 발명은 또한, 상기 유형의 다이오드 레이저 어레인지먼트를 제조하기 위한 방법 및 이와 같은 다이오드 레이저 어레인지먼트를 구비한 레이저 디바이스에 관한 것이다. The present invention relates to a monolithic diode laser arrangement (100), comprising a plurality of individual emitters (101) disposed side by side on a common carrier substrate, each of which emitters are in electrical contact. Contact windows 19 and 20 for the contact windows, which are arranged in front of the carrier substrate facing each other on the respective emitter 101. The invention also relates to a method for manufacturing a diode laser arrangement of this type and to a laser device having such a diode laser arrangement.

基于光栅的光发射机

基于光栅的光发射机包括耦合到干涉区的光源区、干涉区两侧的两个反射区，以及与干涉区中的干涉光波交互导致垂直发射的一个或多个光栅。两个电极被用来注入电载流子，并且可以增加第三电极以调制在光源区中复合的电载流子密度。与具有两个电极的传统边缘发射激光器相比，本发明中的基于光栅的光发射机由于垂直发射而大大降低了封装成本和复杂性，并且由于三端子配置而大大提高了调制带宽。

半導体装置の製造方法

리지 도파형 반도체 레이저 다이오드

전류의 주입구조가 개선된 리지 도파형 반도체 레이저 다이오드가 개시되어 있다. 이 개시된 리지 도파형 반도체 레이저 다이오드는 기판 위에 순차적으로 형성된 하부 멀티 반도체층, 활성층, 리지부를 구비한 상부 멀티 반도체층 및 상부 전극을 포함하는 것으로서, 상부 전극은 리지부의 적어도 일 측면부를 포함하는 영역을 덮는다. 이러한 구조에 의하면, 리지부의 측면을 통하여 전류가 주입되므로 주입저항이 낮아 동작 전압 및 동작전력에 유리하며, 리지부의 양 측면부에 금속이 접하므로 열방출에 유리하게 된다.

Vertical cavity surface emitting laser having multiple top-side contacts

本发明公开了一种具有未掺杂镜的VCSEL。在衬底上形成基本上未掺杂的底部DBR镜。在该底部DBR镜上形成周期性掺杂的第一传导层区。在光电场为约最小值处重度掺杂该第一传导层区。在第一传导层区上为包括量子阱的活性层。周期性掺杂的第二传导层区连接到该活性层。在光电场为最小值处重度掺杂该第二传导层区。在位于量子阱上方的外延结构中形成孔径。顶部镜连接到该周期性掺杂的第二传导层区。该顶部镜基本上未掺杂并且形成为台地结构。在该台地结构周围形成氧化物以在湿氧化工艺期间保护该顶部镜。

유전체 dbr을 갖는 인듐 인화물 vcsel

광전자 디바이스는, 기판의 구역 상에 배치되고 교번하는 제1 유전체 층 및 반도체 층을 포함하는 하위 분포 브래그 반사기(DBR) 스택(24)과 함께, 캐리어 기판(22)을 포함한다. 에피택셜 층들(26, 28, 30, 31, 34)의 세트가 하위 DBR 위에 배치되며, 여기서 에피택셜 층들의 세트는 하나 이상의 III-V족 반도체 재료들을 포함하고 양자 우물 구조(28) 및 구속 층(31)을 정의한다. 상위 DBR 스택(38)은 에피택셜 층들의 세트 위에 배치되고, 교번하는 제2 유전체 층 및 반도체 층을 포함한다. 전극들(40, 42)이 양자 우물 구조에 여자 전류를 인가하도록 커플링된다.

Semiconductor light emitting device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Luminous device and projector

Edge emitting semiconductor laser diode with dielectric layer on active layer

본 발명은 활성층 상에 유전체층이 형성된 측면 발광형 반도체 레이저 다이오드에 관한 것으로, 기판 상에 순차적으로 형성된 n-클래드층, n-광가이드층, 활성층, p-광가이드층을 포함하는 측면 발광형 반도체 레이저 다이오드에 있어서, 상기 p-광가이드층 상에 리지 형태의 유전체층이 형성된 측면 발광형 반도체 레이저 다이오드를 제공한다. The present invention relates to a side-emitting semiconductor laser diode having a dielectric layer formed on an active layer, the side-emitting semiconductor including an n- clad layer, an n-photoguide layer, an active layer, and a p-photoguide layer sequentially formed on a substrate. In the laser diode, there is provided a side-emitting semiconductor laser diode having a ridge-type dielectric layer formed on the p- light guide layer.

Vertical emitter integrated on silicon control backplane

제조 방법은, III-V 반도체 기판(20) 상의 다수의 에피택셜 층들의 퇴적에 의해 수직 이미터들(32)의 어레이(22)를 제조하는 단계, 및 실리콘 기판(26) 상에 수직 이미터들을 위한 제어 회로들(30)을 제조하는 단계를 포함한다. 수직 이미터들의 각각의 전면들(52)이 제어 회로들과 정렬하여 실리콘 기판에 접합된다. 각각의 전면을 접합한 후에, III-V 반도체 기판은 수직 이미터들의 각각의 배면들(50)로부터 박형화되고, 금속 트레이스들(78)은 수직 이미터들을 제어 회로들에 연결하기 위해 수직 이미터들 위에 퇴적된다. The manufacturing method comprises the steps of manufacturing an array 22 of vertical emitters 32 by deposition of a plurality of epitaxial layers on the III-V semiconductor substrate 20, and vertical emitters on the silicon substrate 26. Manufacturing the control circuits 30 for. Each of the front surfaces 52 of the vertical emitters are bonded to the silicon substrate in alignment with the control circuits. After bonding each front surface, the III-V semiconductor substrate is thinned from the respective backs 50 of the vertical emitters, and metal traces 78 are vertical emitters to connect the vertical emitters to the control circuits. Is deposited on top.

Laser element

一種雷射元件包含一透明基板、一接著層以及一雷射單元。透明基板包含一導電層。接著層連接於透明基板。雷射單元包含一正導電結構以及一背導電結構。正導電結構連接於接著層。背導電結構與正導電結構相對，且背導電結構包含相互分離之複數偵測電極。其中複數偵測電極自背導電結構延伸並貫穿正導電結構以及接著層並連接一導電層。

Semiconductor light emitting device and manufacturing method thereof

Nitride based semiconductor laser element and method for fabricating the same

氮基半导体激光器件(10)具有一种依次堆叠放置的第一接触层(14)，第一包覆层(16)，有源层(20)，第二包覆层(24)，第二接触层(26)和第二电极(30)的结构。第二包覆层(24)包括一个下层(24A)和上层(24B)，第一包覆层(14)，有源层(20)和第二包覆层的下层(24A)具有台面结构，第二包覆层的上层(24B)和第二接触层(26)具有脊形结构。在对应于台面结构的顶表面的第二包覆层的下层的一部分上形成绝缘层(40)，绝缘层(40)至少部分覆盖第二包覆层的上层(24B)的对侧面，另外，从绝缘层(40)的顶表面到第二电极(30)的顶表面上形成金属层(42)，金属层(42)具有和台面结构基本相同的宽度。

Vertical cavity surface emitting laser having multiple top-side contacts

A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.

Quantum dot vertical cavity surface emitting laser

A quantum dot vertical cavity surface-emitting laser has a low threshold gain. Top and bottom mirrors have a low mirror loss, with at least one of the mirrors being laterally oxidized to form semiconductor/oxide mirror pairs. In one embodiment, mode control layers reduce the optical field intensity in contact layers, reducing optical absorption. In one embodiment, delamination features are included to inhibit the tendency of laterally oxidized mirrors from delaminating.

Nitride Semiconductor Laser Element

본 발명은 대용량 미디어의 판독, 입력 광원으로서 사용할 수 있도록, 고출력에서의 횡모드 안정성, 수명특성을 향상시킨 질화물 반도체 레이저소자를 제공하는바, 상기 소자는 활성층, p측 클래드층, p측 콘택트층이 순차로 적층되어 있고, p측 콘택트층측에서 에칭에 의해, 스트라이프 형상의 도파로 영역이 형성되며, 상기 영역은 1∼3㎛의 폭과, p측 클래드층의 막두께가 0.1㎛이 되는 위치 이하에서부터 발광층위까지 연장하는 깊이를 갖고 있다. 특히, 원방 형상(far-field pattern)에서 아스펙트비가 개선된 질화물 반도체 레이저소자는 p측 광가이드층이 스트라이프 형상의 돌출부를 갖고, 상기 돌출부 위에 p형 질화물 반도체층이 놓이며, 상기 p측 광가이드층의 돌출부의 막두께는 1㎛ 이하인 것으로, p측 광가이드층이 n측 광가이드층의 막두께보다 두껍다는 특징을 가지고 있다. SUMMARY OF THE INVENTION The present invention provides a nitride semiconductor laser device having improved lateral mode stability at high output and lifetime characteristics for use as an input light source for reading large-capacity media, the device comprising an active layer, a p-side cladding layer, and a p-side contact layer. Laminated in this order, stripe-shaped waveguide regions are formed by etching on the p-side contact layer side, the regions having a width of 1 to 3 µm and a position where the film thickness of the p-side clad layer becomes 0.1 µm or less. Has a depth extending from above to the light emitting layer. In particular, in the nitride semiconductor laser device having an improved aspect ratio in a far-field pattern, the p-side light guide layer has a stripe-shaped protrusion, and the p-type nitride semiconductor layer is disposed on the protrusion, and the p-side light The film thickness of the protruding portion of the guide layer is 1 µm or less, and the p-side optical guide layer is thicker than the n-side optical guide layer. 질화물 반도체, 레이저 소자 Nitride Semiconductors, Laser Devices

Light emitting element

本開示の光素子は、化合物半導体基板１１、ＧａＮ系化合物半導体から成る積層構造体２０、第１光反射層４１及び第２光反射層４２を備えており、積層構造体２０は、第１化合物半導体層２１、活性層２３及び第２化合物半導体層２２が積層されて成り、第１光反射層４１は、化合物半導体基板１１上に配設され、凹面鏡部４３を有しており、第２光反射層４２は、第２化合物半導体層２２の第２面側に配設され、平坦な形状を有しており、化合物半導体基板１１は、低不純物濃度・化合物半導体基板又は半絶縁性・化合物半導体基板から成る。 The optical element of the present disclosure includes a compound semiconductor substrate 11, a laminated structure 20 made of a GaN-based compound semiconductor, a first light reflecting layer 41 and a second light reflecting layer 42, and the laminated structure 20 is a first compound. The semiconductor layer 21, the active layer 23, and the second compound semiconductor layer 22 are laminated, and the first light reflecting layer 41 is arranged on the compound semiconductor substrate 11 and has a concave mirror portion 43. The reflective layer 42 is arranged on the second surface side of the second compound semiconductor layer 22 and has a flat shape. The compound semiconductor substrate 11 has a low impurity concentration, a compound semiconductor substrate, or a semi-insulating compound semiconductor. It consists of a substrate.

Surface light-emitting type semiconductor laser, light module and light transfer device

구조에 자유도가 있고, 또한 고속 구동이 가능한 광검출부를 포함하는 면발광형 반도체 레이저를 제공한다. 본 발명의 면발광형 반도체 레이저(100)는 발광 소자부(140)와, 발광 소자부(140) 위에 설치되며 또한 출사면(108)을 갖는 광검출부(120)를 포함한다. 발광 소자부(140)는 제 1 미러(102)와, 제 1 미러(102) 상방에 설치된 활성층(103)과, 활성층(103) 상방에 설치된 제 2 미러(104)를 포함한다. 제 2 미러(104)는 제 1 영역(104a) 및 제 2 영역(104b)으로 이루어진다. 이 제 2 영역(104b)은 광검출부(120)에 접해 있고, 제 2 영역(104b)은 제 1 영역(104a)보다도 고저항이다. 면발광형 반도체 레이저, 광 모듈, 광 전달 장치, 광검출부

Electrically pumped semiconductor evanescent laser

An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.

Semiconductor laser device and manufacturing method thereof

Optical element

본 발명은 전극의 단선에 의해 광소자의 신뢰성이 저하되는 것을 방지할 수 있는 광소자를 제공하는 것을 목적으로 한다. An object of the present invention is to provide an optical device capable of preventing the reliability of the optical device from being lowered due to disconnection of the electrode. 본 발명에 따른 광소자(100)는 제 1 반도체 소자(170)와 제 2 반도체 소자(160)를 구비한 광소자로서, 상기 제 1 반도체 소자는 반도체층(116, 117, 118)과, 상기 제 1 반도체 소자를 구동하기 위한, 상기 반도체층의 상방의 서로 떨어진 위치에 형성된 제 1 도전형의 제 1 전극(131a) 및 제 2 전극(131b)과, 상기 제 1 반도체 소자를 구동하기 위한 제 2 도전형의 제 3 전극(132)을 포함하고, 상기 제 2 반도체 소자(160)는 상기 제 2 반도체 소자를 구동하기 위한 제 1 도전형의 제 4 전극(121)과, 상기 제 2 반도체 소자를 구동하기 위한 제 2 도전형의 제 5 전극(122)을 포함하고, 상기 광소자는 상기 제 1 전극과 상기 제 5 전극의 접속, 및 상기 제 2 전극과 상기 제 5 전극의 접속을 위한 접속 전극(142)을 더 구비한다. The optical device 100 according to the present invention is an optical device including a first semiconductor device 170 and a second semiconductor device 160. The first semiconductor device includes a semiconductor layer 116, 117, and 118. First and second electrodes 131a and 131b of the first conductivity type formed at positions apart from each other above the semiconductor layer for driving a first semiconductor element, and for driving the first semiconductor element. And a second conductive third electrode 132, wherein the second semiconductor element 160 includes a first conductive fourth electrode 121 for driving the second semiconductor element, and the second semiconductor element. And a fifth electrode 122 of a second conductivity type for driving the light emitting device, wherein the optical device includes a connection electrode for connecting the first electrode and the fifth electrode, and for connecting the second electrode and the fifth electrode. 142 is further provided. 광소자, 반도체층, 콘택트층, 접속 전극, 정류 소자  Optical element, semiconductor layer, contact layer, connection electrode, rectifier element

Gallium nitride compound semiconductor laser and its manufacturing method

본 발명에 따른 질화갈륨계 화합물 반도체 레이저는, 사파이어기판(10)상에 활성층(14)을 클래드층(13,15)으로 협지한 더블헤테로 접합구조를 갖는다. p-클래드층(15)상에 스트라이프형상의 개구부를 갖는 GaN 전류차단층(16)이 형성된다. 더욱이, 전류차단층(16)의 개구부로 전류를 주입함으로써, 이 개구부보다도 면적이 넓은 p-GaN의 매립층(17) 및 접촉층(18)이 형성된다. 활성층(14)은 밴드갭 에너지가 다르고, 각각의 두께가 10㎚이하의 2종류의 InGaAlN층의 반복으로 구성되는 주기구조로 이루어진 다중양자정호(多重量子井戶: MQW)구조를 갖는다. The gallium nitride compound semiconductor laser according to the present invention has a double heterojunction structure in which the active layer 14 is sandwiched between the cladding layers 13 and 15 on the sapphire substrate 10. On the p-clad layer 15, a GaN current blocking layer 16 having a stripe-shaped opening is formed. Further, by injecting current into the opening of the current blocking layer 16, the buried layer 17 and the contact layer 18 of p-GaN having a larger area than the opening are formed. The active layer 14 has a multiple quantum crystal arc (MQW) structure in which a band gap energy is different and each of which has a periodic structure composed of repetitions of two kinds of InGaAlN layers having a thickness of 10 nm or less.

Semiconductor laser and method of fabricating same

A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

Gallium nitride based semiconductor device

Nitride based semiconductor laser element and method for fabricating the same

질화물계 반도체 레이저 소자(10)는 제 1 콘택트층(14), 제 1 클래드층(16), 활성층(20), 제 2 클래드층(24), 제 2 콘택트층(26) 및 제 2 전극(30)이 차례로 적층된 구조를 갖고, 제 2 클래드층(24)은 하층(24A) 및 상층(24B)으로 구성되며, 제 1 클래드층(14), 활성층(20) 및 제 2 클래드층의 하층(24A)은 메사(mesa) 구조를 갖고, 제 2 클래드층의 상층(24B) 및 제 2 콘택트층(26)은 릿지(ridge) 구조를 가지며, 메사 구조의 상부면에 대응하는 제 2 클래드층의 하층(24A) 부분의 위에는 제 2 클래드층의 상층(24B)의 양측면의 각각의 적어도 일부분을 피복한 절연층(40)이 형성되어 있고, 또한, 절연층(40)의 상부면으로부터 제 2 전극(30)의 상부면에 걸쳐 메사 구조의 폭과 실질적으로 동일한 폭을 갖는 금속층(42)이 형성되어 있다. The nitride semiconductor laser device 10 includes a first contact layer 14, a first cladding layer 16, an active layer 20, a second cladding layer 24, a second contact layer 26, and a second electrode ( 30 has a structure in which the second cladding layer 24 is sequentially formed, and the second cladding layer 24 is composed of the lower layer 24A and the upper layer 24B, and the lower layer of the first cladding layer 14, the active layer 20 and the second cladding layer. 24A has a mesa structure, the upper layer 24B and the second contact layer 26 of the second cladding layer have a ridge structure, and the second cladding layer corresponding to the upper surface of the mesa structure. On the lower layer 24A portion of the insulating layer 40 is formed an insulating layer 40 covering at least a portion of each of both side surfaces of the upper layer 24B of the second cladding layer, and from the upper surface of the insulating layer 40 to the second layer. A metal layer 42 having a width substantially equal to the width of the mesa structure is formed over the upper surface of the electrode 30. 질활물계 반도체 레이저 소자, 콘택트층, 클래드층, 절연층, 금속층 Niobium-based semiconductor laser device, contact layer, cladding layer, insulating layer, metal layer