Monolithische integrierte Photonik mit lateralem Bipolar und Bicmos

Nach einem Bilden eines ersten Grabens, der sich durch eine obere Halbleiterschicht und eine vergrabene Isolator-Schicht hindurch und in ein Handhabungssubstrat eines Halbleiter-auf-Isolator(SOI)-Substrats hinein erstreckt, wird innerhalb des ersten Grabens ein Stapel aus Material für einen dielektrischen Wellenleiter gebildet, der eine untere dielektrische Mantelschicht, eine Kernschicht sowie eine obere dielektrische Mantelschicht beinhaltet. Als nächstes wird in einem verbliebenen Teilbereich der oberen Halbleiterschicht wenigstens ein lateraler Bipolartransistor (BJT) gebildet, der aus einem pnp-BJT, einem npn-BJT oder einem Paar von komplementären pnp-BJT und npn-BJT bestehen kann. Nach einem Bilden eines zweiten Grabens, der sich durch den Stapel aus Material für den dielektrischen Wellenleiter hindurch erstreckt, um einen Teilbereich einer Bodenfläche des ersten Grabens wieder freizulegen, wird in dem zweiten Graben eine Laserdiode gebildet.

Herstellungsverfahren einer optischen Halbleitervorrichtung

Halbleiterlaser mit SiGe-Einkristallsubstrat.

Radiation-emitting semiconductor component for semiconductor devices comprises a substrate with a mask layer containing openings, and a semiconductor layer arranged on the substrate in the region of the openings and on the mask layer

Radiation-emitting semiconductor component comprises a substrate (1) with a mask layer (3) containing openings (4), and a semiconductor layer (5) arranged on the substrate in the region of the openings and on the mask layer. The part of the mask layer between the semiconductor layer and the substrate has only one opening. An Independent claim is also included for a process for the production of a number of semiconductor layers.

SILIZIUMWAFER MIT MONOLITHISCHEN OPTOELEKTRONISCHEN KOMPONENTEN

Halbleiterlaservorrichtung , optisches Kommunikationssystem unter Verwendung desselben und Herstellungsverfahren

A Laser System

A laser system has an input waveguide 4 which receives an optical input signal from an optical amplifier 3. Partial reflecting means 5 for example, a Bragg grating, receives an optical input signal from the input waveguide and reflects a portion of the optical input signal back along the input waveguide. The reflecting means 5 and the optical amplifier 3 define a resonant cavity. A reflection photodetector means 30 detects light reflected back by the partial reflecting means 5 and supplies an electrical output signal indicative of the reflected light. Phase modulation means modulates the phase of the optical input signal. Control means controls the phase modulation means in dependence on the electrical output signal from the reflection photodetector means in order to provide a stabilised optical output signal. Preferably, a transmission photodetector 6 detetcts the optical output signal and supplies an electrical output signal indicative of the output signal.

Light emitting device having heat-dissipating element

A light emitting device (e.g. a GaN based III-V nitride device) having a heat dissipating element is provided. The device includes an active layer 160b between first and second material layers for inducing laser emission, a first electrode 154 contacting the lowermost layer 152 of the first material layers, a second electrode contacting the uppermost layer 164 of the second material layers, and a heat dissipating element in contact with the lowermost layer 152. The heat dissipating element is a thermal conductive layer 156 which contacts a region of the lowermost layer 152, while a substrate 150 is present on the remaining region of the lowermost layer 152. The thermal conductive layer may contact the lowermost layer 152 through one or more via holes formed in the substrate. A dent extending into the lowermost layer 152 may also be formed along with the via hole (figure 10).

Light emittng device including an active region containing nanodots in a zinc-blende type crystal

An optoelectronic semiconductor device

A semiconductor device 300 for use in an optoelectronic integrated circuit; the device 300 comprising: a group four substrate 16 e.g. silicon, a waveguide 14, and a group III/V multilayer stack 12; wherein the group III/V multilayer stack comprises a quantum component 10 e.g. dot, dash, or wire for producing light, e.g. laser, for the waveguide 14. The waveguide 14 comprises a material with a deposition temperature below 550 degrees Celsius and a refractive index of any value between 1.3 and 3.8. The waveguide 14 may comprise silicon oxynitride (SiON), silicon nitride, amorphous silicon, glass (Al2O3), polymers or conductive oxides. The waveguide 14 may have a stepped or graded index. Also disclosed is a method of manufacturing the semiconductor device, which may include depositing the waveguide 14 on either side of the quantum component 10. The light produced may be optically coupled to the waveguide by a tapered coupling structure, which may facilitate evanescent coupling.

Mode converter and method of fabricating thereof

III-V / SILICON OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE THEREOF

Method of fabricating an optoelectronic component

Device Coupon

A distributed feedback laser (DFB) comprises an active waveguide 104 with a reflective facet 108. Wherein the distributed feedback laser is prepared by etching a grating 106 for example, a Bragg grating into the active waveguide 104 and etching an output facet into the active waveguide 104. An output facet 114 is etched into the active waveguide such that the grating is located between the reflective facet 108 and the output facet 114. The grating may be located above or underneath an active quantum well layer. Wherein an optoelectronic device comprises a distributed feedback laser characterised by an output waveguide being butt coupled to the active waveguide. The optoelectronic device may be micro-transfer printed using a device coupon using said distributed feedback laser by adhering the device coupon 102 to a stamp and depositing the device coupon onto a platform wafer 118.

PROCEDURE FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES WITH MESASTRUKTUR AND SEVERAL PASSIVATION LAYERS

SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A semiconductor laser element (100) includes an n-side semiconductor layer (2), an active layer (3), and a p-side semiconductor layer (4). A least a portion of the p-side semiconductor layer (4) forms a ridge (4a) projecting upward. The p-side semiconductor layer (4) includes an undoped first part (41), an electron barrier layer (42) containing a p-type impurity and having a larger band gap energy than the first part (41), and a second part (43) having at least one p-type semiconductor layer. The lower end of the ridge (4a) is positioned at the first part (41). 4a 7100 r I 7/ K / / / ~-24 7 7' 8 ...

Semiconductor structure

ELECTRONIC DEVICES INCLUDING SEMICONDUCTOR MESA STRUCTURES AND CONDUCTIVITY JUNCTIONS AND METHODS OF FORMING SAID DEVICES

An electronic device including a substrate and a semiconductor mesa on the substrate. Said device mesa having a mesa base adjacent to the substrate, a mesa surface opposite the substrate, and mesa sidewalls between the mesa surface and the mesa base. In addition, the semiconductor mesa has a first conductivity type between the mesa base and a junction, the junction being between the mesa base and the mesa surface, and the semiconductor mesa having a second conductivity type between the junction and the mesa surface. Related manufacturing methods are also defined.

HYBRID SEMICONDUCTOR LASER COMPONENT AND METHOD FOR MANUFACTURING SUCH A COMPONENT

L'invention concerne un composant laser semiconducteur hybride (1) comportant au moins un premier module d'émission (110, 120) comprenant une zone active conformée pour émettre un rayonnement électromagnétique à une longueur d'onde donnée; et une couche optique (200) comprenant au moins un premier guide d'onde (210, 220) couplé optiquement à la zone active (110, 120),le guide d'onde (210, 220) formant avec la zone active (110, 120) une cavité optique résonnante à la longueur d'onde donnée. Le composant laser semiconducteur hybride (1) comporte en outre une couche semiconductrice (310) dite de dissipation thermique, ladite couche semiconductrice de dissipation thermique (310) étant en contact thermique avec le premier module d'émission (110, 120) sur une surface du premier module d'émission (110, 120) qui est opposée à la couche optique (200). L'invention concerne en outre un procédé de fabrication d'un tel composant laser semiconducteur hybride (1) ...

MULTI-WAVELENGTH LASER SYSTEM

The present invention relates to a system and a method providing multi- wavelength emitting optical integrated planar waveguide device with large wavelength span, having tight control over absolute and especially relative positions of the emitted wavelengths, as well as narrow line widths. The neff experienced by a laser mode in a waveguide is at least partly determined by the physical overlap, the confinement factor, between the laser mode and the refractive index profile of the waveguide core. If the waveguides have well defined refractive index profiles, adjusting the transverse dimensions of the waveguide core adjusts the refractive index profile, and thus the confinement factor and neff. According to the present invention, two or more waveguide lasers are formed wherein the reflective members forming the laser cavity have a spectrally dependent reflectivity which depends upon the effective refractive index, neff, experienced by a laser mode at the position of the reflective member.

OPTO-ELECTRONIC HYBRID INTEGRATION PLATFORM, OPTICAL SUB-MODULE, OPTO-ELECTRONIC HYBRID INTEGRATION CIRCUIT, AND PROCESS FOR FABRICATING PLATFORM

An opto-electronic hybrid integrated circuit of the present invention satisfy a low-loss optical waveguide function, an optical bench function and a high-frequency electrical wiring function. The circuit includes a substrate such as a silicon substrate, a dielectric optical waveguide part arranged in a recess of the substrate, and an optical device mounting part formed on a protrusion of the substrate. An electrical wiring part is disposed on the dielectric layer. The optical device is mounted on the substrate. An optical sub-module includes the optical device which is possible to mount on the substrate.

PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE

METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE COMPRISING A PORTION STRESS

L'invention porte sur un procédé de réalisation d'une structure semiconductrice (1) comportant une portion contrainte (40) et solidaire d'une couche support (30) par collage moléculaire, comportant les étapes dans lesquelles on réalise une cavité (21) située sous une partie structurée (11) de manière à contraindre une portion centrale (40) par des portions latérales (50), ainsi qu'une mise en contact et un collage moléculaire de la partie structurée (11) avec une couche support, le procédé étant caractérisé en ce qu'on effectue un recuit de consolidation, et on grave une partie distale (51) des portions latérales (50) vis-à-vis de la portion contrainte (40).

PHOTONIC INTEGRATED CIRCUIT AND METHOD OF MANUFACTURE

LASER DEVICE AND METHOD OF MANUFACTURING SUCH A LASER DEVICE

L'invention concerne un dispositif laser (1) disposé dans et/ou sur silicium et à hétéro structure III-V comprenant - un milieu amplificateur (3) à hétérostructure III-V, et - un guide d'onde optique en arête (11), disposé en regard du milieu amplificateur (3) et comprenant un guide d'onde en ruban (15) doté d'une arête longitudinale (17), le guide d'onde optique en arête (11) étant disposé dans du silicium, - deux réseaux de Bragg échantillonnés (RBE-A, RBE-B) formés dans le guide d'onde optique en arête (11) et disposés de part et d'autre par rapport au milieu amplificateur (3) à hétérostructure III-V, chaque réseau de Bragg échantillonné (RBE-A, RBE-B) comprenant un premier réseau de Bragg (RB1-A, RB1B) présentant un premier pas et formé dans l'arête (17) ainsi qu'un second réseau de Bragg (RB2-A, RB2-B) présentant un second pas différent du premier pas et formé sur la face (21) du guide d'onde en ruban (15) opposée à l'arête (17).

LASER DEVICE AND METHOD OF MANUFACTURING SUCH A LASER DEVICE

L'invention concerne un dispositif laser (1) disposé dans et/ou sur silicium et à hétéro structure III-V comprenant ○ un milieu amplificateur (3) à hétérostructure III-V, et ○ un guide d'onde optique en arête (11), disposé en regard du milieu amplificateur (3) et comprenant un guide d'onde en ruban (15) doté d'une arête longitudinale (17), le guide d'onde optique en arête (11) étant disposé dans du silicium. Le guide d'onde optique en arête (11) est orienté de manière à ce qu'au moins un réseau de Bragg (19, 19a, 19b) est disposée sur la face (21) du guide d'onde en ruban (15) qui est proximale par rapport au milieu amplificateur (3) et en ce que l'arête (17) est disposée sur la face (23) du guide d'onde en ruban (15) qui est distale par rapport au milieu amplificateur (3).

Laser device for forming high speed optical link, has guiding structure with portion that delivers light generated by transmitting structure that is in III-V or in II-VI technology, where guiding structure is in silicon technology

Il s'agit d'un dispositif laser comportant : une source laser (10) incluant une structure émettrice de lumière (1), une structure guidante (40) pour délivrer la lumière générée par la structure émettrice, cette structure guidante (40) comprenant au moins une première portion (40.1) et une seconde portion (40.2), la première portion logeant un réseau de diffraction (3) qui constitue un réflecteur de la source laser et coopère avec la structure émettrice (1), la seconde portion (40.2) étant un guide d'onde qui délivre la lumière générée par la structure émettrice (1) et s'est propagée dans la première portion (40.1). La structure émettrice (1) est en technologie III-V ou en technologie II-VI et la structure guidante (40) en technologie silicium.

Power laser useful for pumping YAG laser - is based on indium-contg. III=V Semiconductor materials

PROCEEDED OF FORMATION ON a SUPPORT Of a LAYER OF SILICON HAS OPTICAL USE AND IMPLEMENTATION OF the PROCESS FOR the REALIZATION OF OPTICAL COMPONENTS

L'invention concerne un procédé de formation sur un support (10) d'une couche de silicium (22a) à usage optique présentant une épaisseur déterminée. Le procédé comporte les étapes suivantes : a) le collage moléculaire sur le support, d'un bloc de silicium (20a), le bloc de silicium présentant une couche superficielle (22a), et délimitée par une zone de clivage, b) le clivage du bloc de silicium selon la zone de clivage pour en détacher la couche superficielle, c) l'ajustage de l'épaisseur, de ladite couche superficielle. Applications à la fabrication de composants optiques.

SEMICONDUCTOR LASER SOURCE

Source laser à semi-conducteur dans laquelle un guide d'onde dans lequel est réalisé un filtre (22) est en matériau moins sensible à la température. La source laser comporte aussi : • un dispositif d'accord (16) apte à décaler des longueurs d'onde λRj de résonance possible d'une cavité optique de Fabry-Pérot en réponse à un signal électrique de commande, • un capteur (40) apte à mesurer une grandeur physique représentative de l'écart entre une longueur d'onde centrale λCf du filtre (22) et l'une des longueurs d'onde λRj possible, • un circuit électronique (42) apte à générer, en fonction de la grandeur physique mesurée par le capteur, le signal électrique de commande du dispositif d'accord (16) pour maintenir une longueur d'onde λRj au centre de chaque bande passante du filtre (22) qui sélectionne une longueur d'onde ALi d'émission de la source laser.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

Lighting Emitting Device Structure Using Nitride Bulk Single Crystal layer

IMPROVEMENTS IN OR RELATING TO A DISTRIBUTED FEEDBACK LASER DEVICE FOR PHOTONICS INTEGRATED CIRCUIT AND A METHOD OF MANUFACTURE

Semiconductor-based optical system and method of making the same

Integrated optical structure comprising an optical isolator

Direct modulated laser

SEMICONDUCTOR LIGHT-EMITTING DEVICE

A light-emitting device which includes a semiconductor light-emitting element (12), and a plurality of plate-like wavelength conversion members (14) which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis (p) of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.

COPACKAGING OF ASIC AND SILICON PHOTONICS

A system and method for packing optical and electronic components. A module includes an electronic integrated circuit and a plurality of photonic integrated circuits, connected to the electronic integrated circuit by wire bonds or by wire bonds and other conductors. A metal cover of the module is in thermal contact with the electronic integrated circuit and facilitates extraction of heat from the electronic integrated circuit. Arrays of optical fibers are connected to the photonic integrated circuits.

Multilevel template assisted wafer bonding

Fabricating a multilevel composite semiconductor structure includes providing a first substrate comprising a first material; dicing a second substrate to provide a plurality of dies; mounting the plurality of dies on a third substrate; joining the first substrate and the third substrate to form a composite structure; and joining a fourth substrate and the composite structure.

Integrated structure and manufacturing method thereof

A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

Method of making buffer layers for III-V devices using solid phase epitaxy

A new III-IV buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300° C. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high quality III-V active layers.

Integrated light source frequency adjustment, injection locking or modulation of dielectric resonator

An integrated light source for frequency adjustment, injection locking or modulation of an oscillator is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of an active device and a light source on a monocrystalline compound semiconductor material and control circuitry for the light source on a monocrystalline substrate. The use of light to provide the frequency adjustment, injection locking or modulation of the oscillator has multiple advantages including maintenance of good phase-noise.

Structure and method for fabricating anopto-electronic device having an electrochromic switch

A opto-electronic semiconductor structure having an electrochromic switch includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is adapted to transmit radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical source component. An optical detector component that is adapted to receive radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical detector component.

Semiconductor substrate, semiconductor device and method of manufacturing the same

A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In0.2Ga0.8N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

Method for Producing Semiconductor Device

A semiconductor device and a method for producing a semiconductor device are disclosed. The semiconductor device includes a first silicon layer; a first dielectric layer, located on the first silicon layer, where the first dielectric layer includes a window, and a bottom horizontal size of the window of the first dielectric layer is not greater than 20 nm; and a III-V semiconductor layer, located on the first dielectric layer and in the window of the first dielectric layer, and connected to the first silicon layer in the window of the first dielectric layer. A III-V semiconductor material of the semiconductor device has no threading dislocations, and therefore has relatively high performance.

Heterogeneous spectroscopic transceiving photonic integrated circuit sensor

Described herein are optical sensing devices for photonic integrated circuits (PICs). A PIC may comprise a plurality of waveguides formed in a silicon on insulator (SOI) substrate, and a plurality of heterogeneous lasers, each laser formed from a silicon material of the SOI substrate and to emit an output wavelength comprising an infrared wavelength. Each of these lasers may comprise a resonant cavity included in one of the plurality of waveguides, and a gain material comprising a non-silicon material and adiabatically coupled to the respective waveguide. A light directing element may direct outputs of the plurality of heterogeneous lasers from the PIC towards an object, and one or more detectors may detect light from the plurality of heterogeneous lasers reflected from or transmitted through the object.

Semiconductor light source

A light source is based on a combination of silicon and calcium fluoride (CaF₂). The silicon and the calcium fluoride need not be pure, but may be doped, or even alloyed, to control their electrical and/or physical properties. Preferably, the light source employs interleaved portions, e.g., arranged as a multilayer structure, of silicon and calcium fluoride and operates using intersubband transitions in the conduction band so as to emit light in the near infrared spectral range. The light source may be arranged so as to form a quantum cascade laser, a ring resonator laser, a waveguide optical amplifier.

SEMICONDUCTOR LIGHT-EMITTING DEVICE

A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.

Laser device with coupled laser source and waveguide

Laser device comprising: a laser source including a light emitting structure; a guide structure to deliver light generated by the emitting structure, this guide structure comprising at least a first portion and a second portion, the first portion housing a diffraction grating that forms a reflector of the laser source and cooperates with the emitting structure, the second portion being a waveguide that delivers light generated by the emitting structure and propagated in the first portion. The emitting structure is made using the III-V technology or II-VI technology, and the guide structure is made using the silicon technology.

Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals

A silicon photonic chip includes a silicon on insulator wafer and an electro-optical device on the silicon on insulator wafer. The electro-optical device is a lateral current injection electro-optical device that includes a slab having a pair of structured doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair of structured doped layers includes an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer is configured as a two-dimensional photonic crystal. A separation section extends between the pair of structured doped layers, the separation section fully separates the p-doped layer from the n-doped layer. The separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.

SEMICONDUCTOR LASER DEVICE

A semiconductor laser device may include a first cladding on a substrate, an optical waveguide on the first cladding, a laser light source chip on the optical waveguide to generate a laser beam, a first adhesive layer between the optical waveguide and the laser light source chip, and a second adhesive layer covering a sidewall of the laser light source chip.

Vertical emitters with integral microlenses

An optoelectronic device includes a semiconductor substrate having first and second faces. A first array of emitters are formed on the first face of the semiconductor substrate and are configured to emit respective beams of radiation through the substrate. Electrical connections are coupled to actuate selectively first and second sets of the emitters in the first array. A second array of microlenses are formed on the second face of the semiconductor substrate in respective alignment with the emitters in at least one of the first and second sets and are configured to focus the beams emitted from the emitters in the at least one of the first and second sets so that the beams are transmitted from the second face with different, respective first and second focal properties.

Amplification waveguide device and amplification beam steering apparatus including the same

An amplification waveguide device and an amplification beam steering apparatus are provided. The amplification beam steering apparatus includes a beam steerer configured to control emission directions of light beams output therefrom, a plurality of waveguides configured to guide the light beams output from the beam steerer, and a light amplifier configured to amplify the light beams traveling through the plurality of waveguides.

Light-emitting device and manufacturing method of the same

A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged in parallel with a space left therebetween, the space being narrower than emission wavelength, resonator mirrors disposed at the both ends of these semiconductor wires, and a plurality of semiconductor ultra-thin films which are interposed between the first semiconductor wire and the second semiconductor wire and are electrically connected with these semiconductor wires, the first semiconductor wire is electrically connected with the p-electrode, and the second semiconductor wire is electrically connected with the n-electrode, thereby enabling the semiconductor ultra-thin films to generate laser oscillation as a current is injected thereinto.

LASER PROCESSING METHOD

A laser processing method of applying a pulsed laser beam to a single crystal substrate to thereby process the single crystal substrate. The laser processing method includes a numerical aperture setting step of setting the numerical aperture (NA) of a focusing lens for focusing the pulsed laser beam so that the value obtained by dividing the numerical aperture (NA) of the focusing lens by the refractive index (N) of the single crystal substrate falls within the range of 0.05 to 0.2, a positioning step of relatively positioning the focusing lens and the single crystal substrate in the direction along the optical axis of the focusing lens so that the focal point of the pulsed laser beam is set at a desired position in the direction along the thickness of the single crystal substrate, and a shield tunnel forming step of applying the pulsed laser beam to the single crystal substrate so as to focus the pulsed laser beam at the focal point set in the single crystal substrate thereby forming a ...

Hybrid photon device having etch stop layer and method of fabricating the same

Provided are a hybrid photon device including an etch stop layer and a method of manufacturing the hybrid photon device. The hybrid photon device includes: a silicon substrate including a waveguide on a surface thereof; a front etch stop layer and a rear etch stop layer disposed on a surface of the waveguide, the front and rear etch stop layers formed respectively to either side of the first region in a length direction of the waveguide; and a group III/V light-emitting unit generating light on a region of the silicon substrate between the front and rear etch stop layers.

Semiconductor laser source and method for emitting with this laser source

A semiconductor laser source including a Mach-Zehnder interferometer including first and second arms. Each of these arms being divided into a plurality of consecutive sections. The first and second arms each include a gain-generating section forming first and second gain-generating waveguides, respectively. The laser source includes power sources able to deliver currents through the gain-generating waveguides such that the following condition is met:∑n=1N2⁢L2,n⁢neff2,n-∑n=1N1⁢L1,n⁢neff1,n=kf⁢λSiwhere: kf is a preset integer number higher than or equal to 1, N1 and N2 are the numbers of sections in the first and second arms, respectively, L1,n and L2,n are the lengths of the nth sections of the first and second arms, respectively, neff1,n and neff2,n are the effective indices of the nth sections of the first and second arms, respectively.

Method of manufacture for an ultraviolet laser diode

A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

METHOD AND SYSTEM FOR INTEGRATED DWDM TRANSMITTERS

NARROW SURFACE CORRUGATED GRATING

METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING MESA STRUCTURES AND MULTIPLE PASSIVATION LAYERS AND RELATED DEVICES

A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A first passivation layer can be formed on at least portions of the mesa sidewalls and on the substrate adjacent the mesa sidewalls wherein at least a portion of the mesa surface is free of the first passivation layer and wherein the first passivation layer comprises a first material. A second passivation layer can be formed on the first passivation layer wherein at least a portion of the mesa surface is free of the second passivation layer, and wherein the second passivation layer comprises a second material different than the first material. Related devices are also discussed.

Opto-electronic hybrid integration platform, optical sub-module, opto-electronic hybrid integration circuit, and process for fabricating platform

ORIFICE-COMPRISING MODE-LOCKED LASER AND ASSOCIATED OPTICAL COMPONENT

OBERFLÄCHENEMITTIERENDER HALBLEITERLASERCHIP

Oberflächenemittierender Halbleiterlaserchip (1) mit einem Träger (20), einem auf dem Träger (20) angeordneten Schichtenstapel (10) mit einer senkrecht zur Stapelrichtung (R) verlaufenden Schichtenebene (L), einem Vorderseitenkontakt (310) und einem Rückseitenkontakt (320), bei demim Betrieb vermittels Stromeinschnürung im Schichtenstapel (10) eine vorgegebene Verteilung einer Stromdichte (I) erzielt wird, wobeiim Träger (20) eine elektrische Durchkontaktierung (200) vorgesehen ist, welche sich von einer von dem Schichtenstapel (10) abgewandten Bodenfläche (20a) des Trägers (20) bis zu einer dem Schichtenstapel (10) zugewandten Fläche des Trägers (20) erstreckt, unddie Verteilung der Stromdichte (I) durch Form und Größe des Querschnitts der Durchkontaktierung (200) parallel zur Schichtenebene (L) an der dem Schichtenstapel zugewandten Fläche maßgeblich beeinflusst ist.

Optisches Element und Verfahren zu seiner Herstellung

Optisches Element, umfassend ein Substrat (1), in das ein passiver Wellenleiter (10), der eine Dicke D und eine obere Kante (11) aufweist, und ein Laserwellenleiter (20), der eine mittlere Dicke d und eine obere Kante (21) aufweist, eingebracht sind, wobei der passive Wellenleiter (10) und der Laserwellenleiter (20) über eine Verbindungsfläche (15) derart in direktem Kontakt zueinander stehen, dass zwischen dem passiven Wellenleiter (10) und dem Laserwellenleiter (20) Stirnkopplung besteht, zwischen der oberen Kante (11) des passiven Wellenleiters (10) und der oberen Kante (21) des Laserwellenleiters (20) ein Absatz (25) vorgesehen ist und der passive Wellenleiter (10) derart mit einer Abdeckung (30) versehen ist, dass das Substrat (1) und die Abdeckung (30) gemeinsam einen Mantel mit geringerer Brechzahl um den passiven Wellenleiter (10) darstellen, während zwischen der oberen Kante (21) des Laserwellenleiters (20) und der unteren Kante (31) der Abdeckung (30) ein Hohlraum (35) vorhanden ...

Optoelektronische Hybridintegrationsplattform, optisches Untermodul, optoelektronische hybridintegrierte Schaltung, und Herstellungsverfahren der Plattform

Optoelectronic device and method of manufacture thereof

The silicon-on-insulator wafer platform includes a waveguide 104 formed in the silicon layer and a thermal isolation cavity 102 in the surface of the SOI wafer for mounting a micro transfer printed III-V semiconductor optoelectronic device coupon 112. The III-V semiconductor device has a waveguide which is coupled to the silicon waveguide. A region of a bed of the cavity, located between the III-V semiconductor device and the substrate, includes a patterned surface 103, which is configured to interact with an optical signal within the III-V semiconductor waveguide of the III-V semiconductor device. The patterned surface is used to form a grating 103 for a III-V distributed Bragg reflector laser. The thermally isolated cavity may incorporate a heater 701 and a heatsink 801 for temperature control of the optoelectronic device.

Integrated structure and manufacturing method thereof

An integrated optoelectronic device structure comprising CMOS circuitry and optical waveguides is manufactured using a fabrication system having a CMOS line and a photonics line. A first photonics component (eg a waveguide) is formed in a silicon wafer in the photonics line; the wafer is transferred from the photonics line to the CMOS line; and in the CMOS line, a CMOS component is fabricated in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a ridge waveguide and CMOS circuitry. The waveguide has a width of 0.5µm to 13µm.

Optoelectronic device and method of manufacture thereof

An optelectronic semiconductor device

Laser

A laser comprising a photonic component comprising a gain medium and a waveguide platform comprising a distributed Bragg reflector, (DBR) section. The photonic component is optically coupled to the waveguide platform. One or more thermal heaters are positioned at the DBR section of the waveguide platform, and/or at the phase section of the waveguide platform located between the gain medium and the DBR section.

PROCEDURE FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES WITH MESASTRUKTUREN AND MULTIPLES PASSIVATION LAYERS AND USED DEVICES

NANOSCALE COHERENT OPTICAL COMPONENTS

Semiconductor devices

Integrated electronic-optoelectronic devices and method of making the same

PROCEDE DE FABRICATION D'UNE PUCE PHOTONIQUE PAR REPORT D'UNE VIGNETTE SUR UN SUBSTRAT DE RECEPTION

METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING SELF ALIGNED SEMICONDUCTOR MESAS AND CONTACT LAYERS AND RELATED DEVICES

Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact layer has sidewalls and a contact surface opposite the mesa surface and wherein the contact layer extends across substantially an entirety of the mesa surface. A passivation layer can be formed on the mesa sidewalls and on portions of the contact layer sidewalls adjacent the mesa surface, and the passivation layer can expose substantially an entirety of the contact surface of the contact layer.

SEMICONDUCTOR LASER SOURCE

METHOD FOR REALIZATION OF THIN LAYERS HETEROEPITAXIALES AND DISPOSITIFSELECTRONIQUES

DIODE MODULE VERTICAL CAVITY LASER (VCSEL)

L'invention concerne un module (1) de diodes laser à cavité verticale comprenant au moins une première (3A) et une seconde (3B) diodes laser à cavité verticale émettant par la surface et présentant une cavité verticale (5A, 5B) formée d'un premier (7A, 7B) et d'un second (9A, 9B) réflecteur, le second réflecteur (9A, 9B) étant un réflecteur de sortie, les diodes lasers (3A, 3B) étant disposées sur un même substrat (2) et les axes verticaux (18A, 18B) des cavités étant parallèles. Les diodes laser (3A, 3B) à cavité verticale émettant par la surface comprennent un unique second réflecteur de sortie (21) qui est commun à l'ensemble des diodes laser (3A, 3B) du module (1) et formé par une membrane de cristal photonique présentant entre les diodes une discontinuité de couplage (23).

Semiconductor substrate manufacturing method for forming e.g. semiconductor device, involves forming metal layer, and separating transfer layer from donor structure to form composite substrate comprising transfer layer and metal layer

Les modes de réalisation concernent des structures semi-conductrices et des procédés de formation de celles-ci. Dans certains modes de réalisation, les procédés peuvent être utilisés pour fabriquer un substrat semi-conducteur en formant une zone affaiblie dans une structure de donneur à une profondeur prédéterminée pour définir une couche de transfert entre une surface de fixation et la zone affaiblie et une structure de donneur résiduelle entre la zone affaiblie et une surface opposée à la surface de fixation. Une couche métallique est formée sur la surface de fixation et réalise un contact ohmique entre la couche métallique et la couche de transfert, un coefficient de dilatation thermique (CTE) adapté pour la couche métallique qui correspond étroitement à un CTE de la couche de transfert, et une rigidité suffisante pour fournir un support structurel à la couche de transfert. La couche de transfert est séparée de la structure de donneur au niveau de la zone affaiblie pour former un substrat ...

SUBSTRATE PRE-STRUCTURE FOR MAKING PHOTONIC DEVICES, PHOTONIC CIRCUIT AND METHOD OF FABRICATION THEREOF

L'invention porte sur un substrat (S) localement pré-structuré pour la réalisation de composants photoniques (Cp1-Cp4), comportant : - une partie massive en silicium (10) ; - une première région localisée du substrat, comprenant : o une couche (11), dite de dissipation thermique, réalisée de manière localisée en surface de la partie massive (10) et formée en un matériau dont l'indice de réfraction est inférieur à celui du silicium ; o un guide d'ondes (12) sur la couche de dissipation thermique (11) ; - une deuxième région localisée du substrat, comprenant : o une couche d'oxyde (13) réalisée de manière localisée en surface de la partie massive (10), l'oxyde présentant une conductivité thermique inférieure à celle du matériau de la couche de dissipation thermique (11) ; o un guide d'ondes (14) sur la couche d'oxyde. L'invention porte également sur un procédé de fabrication d'un tel substrat pré-structuré, ainsi que sur un circuit photonique (Cp) réalisé sur un tel substrat.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

SEMICONDUCTOR STRUCTURE HAVING FOR AN OPTOELECTRONIC COMPONENT.

HYBRID LASERS

ELECTRODE STRUCTURE, SEMICONDUCTOR LIGHT-EMITTING DEVICE PROVIDED WITH THE SAME TO OBTAIN LOW CONTACT RESISTANCE AND HIGH REFLECTANCE, AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: An electrode structure, a semiconductor light-emitting device provided with the same and a method for manufacturing the same are provided to obtain a p-type electrode structure simultaneously satisfying a low contact resistance and a high transmissivity. CONSTITUTION: An electron injection layer having a first region and a second region(104) is formed on a transparent substrate(102). An active layer(108b) is formed on the first region. A hole injection layer is formed on the active layer. A first electrode structure(112) is formed on the second region. A second electrode structure(118) being formed on the hole injection layer comprises a first layer and a second layer, the first layer contains nitrogen(N) and the second layer contains palladium(Pd). © KIPO 2006 ...

grade de superfície corrugada estreita

A method for fabricating a nanostructure

A method for fabricating a nanostructure comprises the steps of growing a first nanowire on a substrate, forming a dielectric layer on the substrate, the dielectric layer surrounding the first nanowire, wherein a thickness of the dielectric layer is smaller than a length of the first nanowire, and removing the first nanowire from the dielectric layer, thereby exposing an aperture in the dielectric layer.

Nanowire laser structure and fabrication method

A nanowire laser structure comprises a substrate, an elongated support element extending from the substrate, the support element having a first diameter, and an elongated body element extending on and/or around the support element, the body element having a second diameter at least two times larger than the first diameter, wherein the body element is spaced apart from the substrate.

High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof

Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.

Gain-clamped semiconductor optical amplifiers

A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.

Group iii nitride semiconductor multilayer structure and production method thereof

According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.

Method and system for template assisted wafer bonding

A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

Germanium light-emitting element

A germanium light-emitting device emitting light at high efficiency is provided by using germanium of small threading dislocation density. A germanium laser diode having a high quality germanium light-emitting layer is attained by using germanium formed over silicon dioxide. A germanium laser diode having a carrier density higher than the carrier density limit that can be injected by existent n-type germanium can be provided using silicon as an n-type electrode.

Metal Oxide Semiconductor Films, Structures, and Methods

Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn 1-x Be x O, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn 1-y Cd y O 1-z Se z , can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements.

Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits

Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate.

Hybrid laser light sources for photonic integrated circuits

A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.

Method for the reuse of gallium nitride epitaxial substrates

A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Method and system for template assisted wafer bonding

A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators

Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.

Semiconductor device and manufacturing method therefor

The purpose of the present invention is to provide a good ohmic contact for an n-type Group-III nitride semiconductor. An n-type GaN layer and a p-type GaN layer are aequentially formed on a lift-off layer (growth step). A p-side electrode is formed on the top face of the p-type GaN layer. A copper block is formed over the entire area of the top face through a cap metal. Then, the lift-off layer is removed by making a chemical treatment (lift-off step). Then, a laminate structure constituted by the n-type GaN layer, with which the surface of the N polar plane has been exposed, and the p-type GaN layer is subjected to anisotropic wet etching (surface etching step). The N-polar surface after the etching has irregularities constituted by {10-1-1} planes. Then, an n-side electrode is formed on the bottom face of the n-type GaN layer (electrode formation step).

Photonic package architecture

A photonic package includes a photonic device having a photon emitter on the front side of the die. A beam of photons from the photon emitter passing from the front side to the backside of the die, passes through the substrate material of the die which is substantially transparent to the beam of photons, to the backside of the die. Other embodiments are also described.

OPTICAL DEVICE

Provided is an optical device capable of bonding each optical part to a substrate with the same applied load by surface activated bonding even if the planar shape sizes of a plurality of optical parts to be mounted on the substrate are different from one another. The optical device includes a substrate, a plurality of optical parts different in planar shape size, bonded to the substrate by surface activated bonding adjacent to one another, and optically coupled with one another, and a plurality of bonding parts provided on the substrate in correspondence to the plurality of optical parts and including metallic micro bumps for bonding each optical part. The total area of the top surfaces of the micro bumps to be bonded to the corresponding optical part of each of the plurality of bonding parts is substantially the same. 1. An optical device comprising:a substrate;a plurality of optical parts different in planar shape size, bonded to the substrate by surface activated bonding adjacent to one another, and optically coupled with one another; anda plurality of bonding parts provided on the substrate in correspondence to the plurality of optical parts and including metallic micro bumps for bonding each optical part,wherein the total area of the top surfaces of the micro bumps to be bonded to the corresponding optical part of each of the plurality of bonding parts is substantially the same.2. The optical device according to claim 1 , wherein each of the plurality of bonding parts differs in density of the micro bumps in accordance with the size of the planar shape of the corresponding optical part.3. The optical device according to claim 2 , wherein each of the plurality of boding parts has substantially the same area of the top surface of each micro bump and differs in the pitch of the micro bumps.4. The optical device according to claim 2 , wherein each of the plurality of boding parts has substantially the same pitch of the micro bumps and differs in the area of the top ...

Laser Light Source

A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation At least one of the functional layers is designed as a ridge of the ridge waveguide structure The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.

Method for handling a semiconductor wafer assembly

Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.

Hybrid vertical cavity laser for photonic integrated circuit

According to example embodiments, a hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror between first and second low refractive index layers, an optical waveguide optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer on an upper one of the first and second low refractive index layers, and a top mirror on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions arranged parallel to each other. The low refractive index material portions include a plurality of first portions having a first width and a plurality of second portions having second width in a width direction. The first and second widths are different.

Semiconductor device and fabrication method

A semiconductor device comprising a nominally or exactly or equivalent orientation silicon substrate on which is grown directly a <100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a buffer layer of the same compound, formed directly on the NL, optionally followed by further III-V semiconductor layers, followed by at least one layer containing III-V compound semiconductor quantum dots, optionally followed by further III-V semiconductor layers. The NL reduces the formation and propagation of defects from the interface with the silicon, and the resilience of quantum dot structures to dislocations enables lasers and other semiconductor devices of improved performance to be realized by direct epitaxy on nominally or exactly or equivalent orientation silicon.

PASSIVE PLACEMENT OF A LASER ON A PHOTONIC CHIP

Embodiments disclosed herein generally relate to a method for manufacturing a photonic device that facilitates precise alignment of a laser with a waveguide. The method generally includes disposing the laser on a support member on a substrate such that the laser contacts the support member. The support member may extend in a direction perpendicular to a base plane of the substrate, and solder may be disposed on the base plane such that a height of the solder in the direction perpendicular to the base plane is less than a height of the support member so that a gap is created between the solder and the laser. Once the laser has been properly aligned with the waveguide, the solder may be heated (e.g., reflowed) so that the solder contacts the laser. 1. A method , comprising:disposing a bottom surface of a laser on a support member, wherein the support member is formed on a substrate and extends in a direction perpendicular to a base plane of the substrate, wherein the bottom surface of the laser is in a facing relationship with the base plane, and wherein solder is disposed on the base plane such that a height of the solder in the direction perpendicular to the base plane is less than a height of the support member so that a gap is created between the solder and the laser;aligning the laser with an optical waveguide; andheating the solder, after the alignment of the laser with the optical waveguide, so that the solder contacts the laser.2. The method of claim 1 , further comprising disposing an electrode between the substrate and the solder claim 1 , wherein the solder is disposed on the electrode.3. The method of claim 2 , further comprising connecting a trace from a circuit in the substrate to the electrode to provide power to the laser via the solder.4. The method of claim 1 , further comprising applying pressure on the laser towards the support member when heating the solder.5. The method of claim 1 , wherein the substrate is part of a photonic chip claim 1 , the ...

SIDE MODE SUPPRESSION FOR EXTENDED C-BAND TUNABLE LASER

A method for improving wide-band wavelength-tunable laser. The method includes configuring a gain region between a first facet and a second facet and crosswise a PN-junction with an active layer between P-type cladding layer and N-type cladding layer. The method further includes coupling a light excited in the active layer and partially reflected from the second facet to pass through the first facet to a wavelength tuner configured to generate a joint interference spectrum with multiple modes separated by a joint-free-spectral-range (JFSR). Additionally, the method includes configuring the second facet to have reduced reflectivity for increasing wavelengths. Furthermore, the method includes reconfiguring the gain chip with an absorption layer near the active layer to induce a gain loss for wavelengths shorter than a longest wavelength associated with a short-wavelength side mode. Moreover, the method includes outputting amplified light at a basic mode via the second facet. 1. A method for improving wide-band wavelength-tunable laser comprising:configuring a gain chip lengthwise a gain region between a first facet and a second facet and crosswise a PN-junction with an active layer between P-type cladding layer and N-type cladding layer;coupling a light excited in the active layer and at least partially reflected from the second facet to pass through the first facet to a wavelength tuner configured to generate a joint interference spectrum with multiple modes in isolated spectral peaks separated by a joint-free-spectral-range (JFSR);configuring the second facet to have reduced light reflectivity for wavelengths increasing from a basic mode JFSR peak to a long-wavelength side mode JFSR peak;reconfiguring the gain chip with an absorption layer disposed in the N-type cladding layer near the active layer to induce a gain loss for wavelengths shorter than a longest wavelength associated with a short-wavelength side mode JFSR peak; andamplifying the light at the basic mode ...

ARRAY OF OPTOELECTRONIC STRUCTURES AND FABRICATION THEREOF

A method of fabrication of an array of optoelectronic structures. The method first provides a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells comprises an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portions that coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions. 1. A method of fabrication of an array of optoelectronic structures , comprising:providing a crystalline substrate with a template structure thereon, wherein the template structure comprises cells corresponding to individual optoelectronic structures to be obtained, each of the cells comprising an opening to the substrate;growing several first layer portions of a first compound semiconductor material from seeds in each said opening, for each of said first layer portions to a least partly fill a respective one of the cells and form an essentially planar film portion therein;growing several, second layer portions of a second compound semiconductor material over said first layer portions, for neighboring ones of said second layer portions to coalesce and thereby form a coalescent film extending over said first layer portions; andremoving excess portions of materials extending over one or more portions of the substrate corresponding to lateral boundaries of the cells, wherein each of the optoelectronic structures ...

SEMICONDUCTOR LASER SOURCE

A semiconductor laser source includes a structured layer formed on a substrate made of silicon and having an upper face. The structured layer includes a passive optical component chosen from the group composed of an optical reflector and a waveguide. The component is encapsulated in silica or produced on a silica layer. At least one pad extends from a lower face of the structured layer, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer. The pad is produced entirely from silicon nitride, in order to form a thermal bridge through the structured layer. An optical amplifier is bonded directly above the passive optical component and partially to the upper face of the pad in order to dissipate the heat that it generates to the substrate made of silicon. 1. A semiconductor laser source able to emit at least one wavelength λ , said laser source comprising:a substrate made of silicon extending mainly in a plane called the “plane of the substrate”;a structured layer formed on an upper face of the substrate made of silicon and having an upper face on the opposite side to the substrate made of silicon, said structured layer comprising:a passive optical component chosen from the group composed of an optical reflector and a waveguide, said passive optical component being encapsulated in silica or produced on a silica layer; andat least one pad extending from a lower face, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer, said pad being made entirely from a material the thermal conductivity at 20° C. of which is higher than the thermal conductivity at 20° C. of silica, in order to form a thermal bridge through the structured layer; and{'sub': 'Li', 'an optical amplifier made of III-V material able, when it is supplied with power, to amplify the optical signal of wavelength λthat passes through it, said optical amplifier being bonded ...

LASER CHIP WITH MULTIPLE OUTPUTS ON COMMON SIDE

A laser chip including a laser cavity that produces multiple laser outputs. A laser waveguide guides light through the laser cavity and has multiple output facets. Each of the laser outputs passes through one of the output facets. The laser waveguide guides the laser outputs such that the angle between the exit direction of different laser outputs is less than 180°. The exit direction for a laser output is the direction of propagation of light in the laser waveguide at one of the output facets. 1. An optical system , comprising: a laser waveguide guiding light through the laser cavity having multiple output facets, each of the laser outputs passing through one of the output facets,', 'the laser waveguide guiding the laser outputs such that an angle between an exit direction for different laser outputs is less than 180°, the exit direction for a laser output being a direction of propagation of light in the laser waveguide at one of the output facets; and', 'a planar optical device that receives the laser outputs from the laser chip without returning the laser outputs to the laser cavity., 'a laser chip including a laser cavity that produces laser outputs,'}2. (canceled)3. The system of claim 1 , wherein the optical device is constructed on a silicon-on-insulator wafer.4. The system of claim 1 , wherein the angle between the exit directions is less than 90°.5. The system of claim 1 , wherein the angle between the exit directions is less than 10°.6. The system of claim 1 , wherein the laser chip includes lateral sides between a top side and a bottom side and at least two of the laser outputs cross the same lateral side.7. The system of claim 1 , wherein the laser chip includes lateral sides between a top side and a bottom side and the laser chip includes an anti-reflective coating on only one of the lateral sides.8. The system of claim 1 , wherein a medium through which the laser waveguide guides the light has a chemical composition that is constant along the length of ...

Semiconductor laser

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

Two-stage seeded growth of large aluminum nitride single crystals

In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.

MONOLITHIC III-V NANOLASER ON SILICON WITH BLANKET GROWTH

A nanolaser includes a silicon substrate and a III-V layer formed on the silicon substrate having a defect density due to differences in materials. A laser region is formed on or in the III-V layer, the laser region having a size based upon the defect density. 1. A nanolaser , comprising:a silicon substrate;at least one III-V layer formed on the silicon substrate having a defect density due to differences between the III-V and silicon materials; anda laser device formed on or in the at least one III-V layer, the laser device having a size based upon the defect density.2. The nanolaser as recited in claim 1 , wherein the at least one III-V layer includes one or more buffer layers.3. The nanolaser as recited in claim 1 , wherein the at least one III-V layer includes a line formed on a buffer layer and a multiple quantum well structure is formed in the line.4. The nanolaser as recited in claim 1 , wherein the laser device occupies an area less than a defect density area.5. The nanolaser as recited in claim 1 , wherein a size of the laser device is selected to provide at least 94% of lasers that are defect free.6. The nanolaser as recited in claim 1 , wherein the size of the laser device is selected to provide at least 99.9% of lasers that are defect free.7. The nanolaser as recited in claim 1 , wherein the size is less than about 1/16 of a squared micron.8. The nanolaser as recited in claim 1 , wherein the at least one III-V layer includes a blanket deposited layer on the silicon substrate.9. A nanolaser claim 1 , comprising:a silicon substrate;a buffer layer including GaAs formed on the silicon substrate and having a defect density due to differences between the III-V and silicon materials; andone or more III-V layers formed on the buffer layer and configured to support a laser device formed on or in the one or more III-V layers, the laser device includes a multiple quantum well structure and has a size based upon the defect density.10. The nanolaser as recited in ...

Advanced Heterojunction Devices and Methods of Manufacturing Advanced Heterojunction Devices

Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

LIFT-OFF METHOD

In an optical device wafer, an optical device layer is formed over a front surface of an epitaxy substrate with the intermediary of a buffer layer composed of a Ga compound containing Ga. After a transfer substrate is joined to the optical device layer of the optical device wafer, a separation layer is formed at a boundary surface between the epitaxy substrate and the buffer layer by performing irradiation with a pulsed laser beam having such a wavelength as to be transmitted through the epitaxy substrate and be absorbed by the buffer layer from a back surface side of the epitaxy substrate. Thereafter, an ultrasonic horn that oscillates ultrasonic vibration is brought into contact with an outer circumferential part of the epitaxy substrate to vibrate the epitaxy substrate, and the epitaxy substrate is separated from the transfer substrate to transfer the optical device layer to the transfer substrate. 1. A lift-off method for transferring , to a transfer substrate , an optical device layer of an optical device wafer in which the optical device layer is formed over a front surface of an epitaxy substrate with intermediary of a buffer layer composed of a Ga compound containing Ga , the lift-off method comprising:a transfer substrate joining step of joining the transfer substrate to a surface of the optical device layer of the optical device wafer with intermediary of a joining metal layer;a separation layer forming step of forming a separation layer at a boundary surface between the epitaxy substrate and the buffer layer by performing irradiation with a pulsed laser beam having such a wavelength as to be transmitted through the epitaxy substrate and be absorbed by the buffer layer from a back surface side of the epitaxy substrate of the optical device wafer to which the transfer substrate is joined; andan optical device layer transfer step of, after the separation layer forming step is carried out, bringing an ultrasonic horn that oscillates ultrasonic vibration into ...

BONDING INTERFACE LAYER

An example device in accordance with an aspect of the present disclosure includes a first layer and a second layer to be bonded to the first layer. The first and second layers are materials that generate gas byproducts when bonded, and the first and/or second layers is/are compatible with photonic device operation based on a separation distance. At least one bonding interface layer is to establish the separation distance for photonic device operation, and is to prevent gas trapping and to facilitate bonding between the first layer and the second layer. 1. A device comprising:a first layer formed of a silicon (Si)—based material;a second layer to be bonded to the first layer, wherein the first and second layers are materials that cause gas byproduct trapping when bonded, and wherein the second layer includes an optical component to interact with the first layer to perform a photonic device operation; anda bonding interface layer that establishes a separation distance of less than 1,000 nanometers between the first and second layers for the photonic device operation, the bonding interface layer disposed between the first layer and the second layer to prevent void formation and to facilitate bonding between the first layer and the second layer, wherein the bonding interface layer includes a material selected from the group consisting of HfO2, Y2O3, and ZrO2 and serves as a high dielectric constant material for the photonic device operation.2. (canceled)3. The device of claim 1 , wherein the optical component of the second layer comprises a photonic laser.4. The device of claim 1 , wherein the second layer is formed as a microring.5. The device of claim 1 , wherein the second layer is formed to include a straight ridge shape.6. The device of claim 1 , wherein the first layer includes a feature for optical mode confinement claim 1 , to interact optically with the second layer.7. The device of claim 1 , wherein the first layer includes a pattern providing an optical ...

MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN MATERIAL

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch. 132.-. (canceled)33. A method for manufacturing a laser diode device , the method comprising:providing a gallium and nitrogen containing substrate having a surface region;forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material overlying the surface region, an n-type gallium and nitrogen containing region overlying the release material, an active region comprising at least one quantum well layer overlying the n-type gallium and nitrogen containing region, a p-type gallium and nitrogen containing region overlying the active region; and an interface region overlying the p-type gallium and nitrogen containing region;forming a plurality of dies by patterning the epitaxial material, each pair of adjacent dies being characterized by a first pitch between the pair of dies, each of the dies corresponding to at least one laser diode device;bonding the interface region associated with a portion of the plurality of dies to a carrier substrate to form bonded dies;subjecting the release material of the bonded dies to an energy source to release the bonded dies from the gallium and nitrogen containing substrate and transfer ...

Tunable Laser

Examples of the present disclosure include a tunable laser comprising a waveguide including gain section. The waveguide overlies and is optically coupled to another waveguide. The another waveguide has a reflector at one end. A laser cavity is formed in the waveguides. 1. A tunable laser comprising:a first waveguide comprising a first III-V semiconductor material and including a first gain section;a second waveguide comprising a second III-V semiconductor material and including a second gain section;an optical coupler to couple light between the first waveguide and the second waveguide;wherein the first waveguide overlies and is optically coupled to a third waveguide which comprises a third III-V semiconductor material, the third waveguide having a width which is greater than a largest width of the first gain section of the first waveguide;wherein the second waveguide overlies and is optically coupled to a fourth waveguide which comprises a fourth III-V semiconductor material, the fourth waveguide having a width which is greater than a largest width of the second gain section of the second waveguide; andwherein a first laser cavity is formed between the optical coupler and a reflector of the third waveguide and a second laser cavity is formed between the optical coupler and a reflector of the fourth waveguide.2. The tunable laser of wherein the first waveguide includes a first taper transition tip to couple light from the first waveguide to the third waveguide and the second waveguide includes a second taper transition tip to couple light from the second waveguide to the fourth waveguide.3. The tunable laser of wherein the effective refractive index of the first gain section of the first waveguide is higher than an effective refractive index of the third waveguide.4. The tunable laser of wherein the third waveguide is a diluted waveguide including a plurality of alternating layers claim 3 , a first one of said alternating layers comprising a third III-V ...

LIGHT SOURCE UNIT AND THERMALLY-ASSISTED MAGNETIC HEAD

A light source unit for thermally-assisted magnetic head includes a substrate member having a first bonding surface; a light source assembly attached on the first bonding surface of the substrate member and having a second bonding surface; and a heater circuit assembly formed between the substrate member and the light source assembly, the heater circuit assembly having a heater formed on the substrate member and two leads connected at two ends of the heater, the lead being thicker than the heater, thereby a distance between the heater and the second bonding surface is farther than that between the lead and the second bonding surface. The light source unit can reduce mechanical stress and thermal conduction between a light source assembly and a substrate member, thereby improving the performance of the light source assembly and the heater. 1. A light source unit for thermally-assisted magnetic head , comprising:a substrate member having a first bonding surface,a light source assembly attached on the first bonding surface of the substrate member and having a second bonding surface; anda heater circuit assembly formed between the substrate member and the light source assembly, the heater circuit assembly having a heater formed on the substrate member and two leads connected at two ends of the heater, the lead being thicker than the heater, thereby a distance between the heater and the second bonding surface is farther than that between the lead and the second bonding surface.2. The light source unit according to claim 1 , wherein the first bonding surface of the substrate member has a bonding area that is bonded to the light source assembly claim 1 , and the heater is buried under the light source assembly and located within the bonding area.3. The light source unit according to claim 1 , wherein multiple layers are formed on the substrate member and comprising a base layer claim 1 , a connection pad layer claim 1 , an insulation layer claim 1 , a buffer layer and a ...

Semiconductor Device and Method

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

Projector, electronic device having projector and associated manufacturing method

The present invention provides a projector including a substrate, a laser module and a lens module. The laser module is positioned on the substrate, and a laser diode of the laser module is not packaged within a can. The lens module is arranged for receiving a laser beam from the laser diode of the laser module to generate a projected image of the projector.

Infrared illumination device configured with a gallium and nitrogen containing laser source

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

LIGHT EMITTING DEVICE AND PROJECTOR

A light emitting device includes a laminated structure having a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer includes a light emitting layer, and the second semiconductor layer includes a first portion, and a second portion which surrounds the first portion in a plan view from a laminating direction of the first semiconductor layer and the light emitting layer, and is lower in impurity concentration than the first portion. 1. A light emitting device comprising:a laminated structure having a plurality of columnar parts, wherein a first semiconductor layer,', 'a second semiconductor layer different in conductivity type from the first semiconductor layer, and', 'a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer,, 'the columnar part includes'}the third semiconductor layer includes a light emitting layer, and a first portion, and', 'a second portion which surrounds the first portion in a plan view from a laminating direction of the first semiconductor layer and the light emitting layer, and is lower in impurity concentration than the first portion., 'the second semiconductor layer includes'}2. The light emitting device according to claim 1 , whereinin a contact portion having contact with the third semiconductor layer in the second semiconductor layer, an impurity concentration in a portion overlapping an outer edge of an end part at the second semiconductor layer side of the light emitting layer in the plan view from the laminating direction is lower than an impurity concentration at a center of the contact portion, andan impurity concentration in an outer edge of the contact portion is lower than the impurity concentration at ...

Highly Stable Semiconductor Lasers and Sensors for III-V and Silicon Photonic Integrated Circuits

Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission. 1.A highly stable semiconductor laser , comprising:a laser cavity comprising a narrow-ridge waveguide and having a first highly reflective end thereof and a second highly reflective end thereof, the reflectivity of the first and second ends thereof being configured to prevent light emitted from the laser cavity from being fed back into the laser cavity as a result of interactions with external optical elements; anda passive waveguide that runs parallel to the narrow ridge of the laser cavity over a predefined portion of the laser cavity so as to allow the passive waveguide to controllably receive a predetermined fraction of the light emitted from the laser cavity;wherein the predetermined fraction of light from the laser is evanescently coupled to the passive waveguide for output from the highly stable laser.21. The highly stable semiconductor laser according to claim , wherein the first and second ends of the laser cavity comprise a first end facet which is coated for high reflection at the first end thereof and a second end facet which is coated for high reflection at the ...

SURFACE EMITTING LASER STRUCTURE

A surface emitting laser with improved efficiency includes a conductive substrate, a metal bonding layer, a laser structure layer, an epitaxial semiconductor reflection layer, and an electrode layer. The laser structure layer has an epitaxial current-blocking layer having a current opening. Currents are only transmitting through the current opening. The epitaxial current-blocking layer is grown by a semiconductor epitaxy process to confine the range of the currents to form electric fields. Heat dissipation and electrical conduction properties are improved by the conductive substrate. Because the epitaxial current-blocking layer is not made by destructive manufacturing method, the efficiency of the surface emitting laser can be improved. 1. A surface emitting laser with improved efficiency , the surface emitting laser comprising:a conductive substrate;a metal bonding layer on an upper surface of the conductive substrate;a laser structure layer on an upper surface of the metal bonding layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;an epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;a first electrode layer on an upper surface of the epitaxial semiconductor reflection layer for packaging and electrical conduction;wherein, the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer.2. The surface emitting laser according to claim 1 , wherein the metal bonding layer claim 1 , the laser structure layer claim 1 , the epitaxial semiconductor reflection layer claim 1 , the first electrode layer claim 1 , and the conductive substrate are combined with each other by a wafer bonding process claim 1 , in the wafer ...

Method for Producing an Optoelectronic Semiconductor Chip and Optoelectronic Semiconductor Chip

In at least one embodiment, a method is designed to produce optoelectronic semiconductor chips. A carrier assembly, which is a sapphire wafer, is produced. A semiconductor layer sequence is applied to the carrier assembly. The carrier assembly and the semiconductor layer sequence are divided into the individual semiconductor chips. The dividing is implemented by producing a multiplicity of selectively etchable material modifications in the carrier assembly in separation region(s) by focused, pulsed laser radiation. The laser radiation has a wavelength at which the carrier assembly is transparent. The dividing includes wet chemically etching the material modifications, such that the carrier assembly is singulated into individual carriers for the semiconductor chips solely by the wet chemical etching or in combination with a further material removal method. 116-. (canceled)17. A method for producing a plurality of optoelectronic semiconductor chips , the method comprising:providing a carrier assembly, which is a sapphire wafer;applying a semiconductor layer sequence to the carrier assembly, the semiconductor layer sequence having an active zone for generating electromagnetic radiation during operation; anddividing the carrier assembly and the semiconductor layer sequence into individual semiconductor chips or into groups of semiconductor chips in separation regions between adjacent semiconductor chips or groups, wherein the dividing comprises:producing a plurality of selectively etchable material modifications in the carrier assembly in the separation regions by focused, pulsed laser radiation, wherein the laser radiation has a wavelength at which the carrier assembly is transparent; and subsequentlywet chemically etching the material modifications, wherein the carrier assembly is singulated into individual carriers for the semiconductor chips or for the groups by the wet chemical etching in combination with a further material removal method;wherein smooth side faces ...

PHOTONIC TRANSMITTER

A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 μm, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material. 110.-. (canceled)11. A photonic transmitter , comprising: a first layer disposed directly on the substrate and comprising single-crystal silicon encapsulated in a dielectric material,', 'a second layer disposed directly on the first layer and comprising a dielectric material, and', 'a third layer disposed directly on the second layer and comprising a III-V gain material and a doped III-V crystalline material, wherein the III-V gain material and the doped III-V crystalline material are encapsulated in a dielectric material;, 'a stack comprising a substrate and the following layers successively stacked one on top of the other and each mainly lying parallel to a plane of the substrate a first waveguide made of silicon structured in the single-crystal silicon of the first layer, and', 'a second waveguide made of III-V gain material structured in the III-V gain material of the third layer, the first and second waveguides being optically coupled to each other by adiabatic coupling and being separated from each other by a first segment of the second layer, wherein in an interior of the first segment of the second layer, a thickness of the dielectric material ...

IMPROVEMENTS IN OR RELATING TO A DISTRIBUTED FEEDBACK LASER DEVICE FOR PHOTONICS INTEGRATED CIRTUIT AND A METHOD OF MANUFACTURE

A distributed feedback laser integrated on silicon comprising a combination of a waveguide of a first material and a laser diode a second material, different from the first material, wherein the laser diode comprises a plurality of regularly spaced metalized grating elements which form a single longitudinal mode; wherein the waveguide comprises a plurality of waveguide elements separated by metalized regions; and wherein the metalized grating elements and the metalized regions are adapted to be coupled to one another to form the distributed feedback laser. 1. A distributed feedback laser integrated on silicon comprising a combination of a waveguide of a first material and a laser diode a second material , different from the first material , wherein the laser diode comprises a plurality of regularly spaced metalized grating elements which form a single longitudinal mode; wherein the waveguide comprises a plurality of waveguide elements separated by metalized regions; andwherein the metalized grating elements and the metalized regions are adapted to be coupled to one another to form the distributed feedback laser.2. The distributed feedback laser according to claim 1 , wherein the first material is silicon and the second material comprises a III-V material.3. The distributed feedback laser according to or claim 1 , wherein the metalized grating elements and the metalized regions are adapted to be bonded to one another to form an internal bonded metal layer.4. The distributed feedback laser according to claim 3 , wherein bonding comprises butt coupling.5. The distributed feedback laser according to or claim 3 , wherein the bonding is achieved by applying force to the push together the waveguide and laser diode in an atmosphere of nitrogen at a predetermined temperature for a predetermined time.6. The distributed feedback laser according to claim 5 , wherein the force is between about 0.5 and 3 N.7. The distributed feedback laser according to or claim 5 , wherein the ...

Optical device and manufacturing method thereof

Provided is an optical device including a first optical waveguide on one side of a substrate; a laser separated from the first optical waveguide and disposed on the other side of the substrate; and a first coupled waveguide between the laser and the first optical waveguide. The laser may be monolithically integrated on the substrate.

GALLIUM NITRIDE CROSS-GAP LIGHT EMITTERS BASED ON UNIPOLAR-DOPED TUNNELING STRUCTURES

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization. 1. A solid-state device , comprising:a bottom n-type layer;a top n-type layer;a middle layer inserted between the top layer and bottom layer, where the middle layer comprises at least two materials provided between the top and bottom layers which serve as heterojunction tunnel barriers;and where the top layer and the middle layer form an interband tunnel barrier to generate holes by Zener tunneling across the potential barrier of the forbidden energy gap, and where the middle layer forms at least one intraband tunnel barrier to control electron flow.2. The device of claim 1 , wherein the top claim 1 , middle and bottom layers are comprised of gallium nitride claim 1 , aluminum nitride claim 1 , indium nitride or alloys and combinations of III-nitride semiconductors or III-nitride compatible semiconductors.3. The device of claim 2 , wherein the heterojunction interband tunnel barrier is formed by the polarization effects at III-nitride heterojunctions.4. The device of claim 1 , wherein the middle layer forms at least two intraband tunnel barriers claim 1 , wherein the at least two intraband tunnel barriers form a quantum well within the middle layer.5. The device of claim 1 , wherein the middle layer forms at least two intraband tunnel barriers claim 1 , wherein the at least two intraband tunnel barriers form a double barrier resonant tunneling diode.6. The device of claim 1 , wherein the middle layer is either undoped or doped less than the top ...

Single-Pass Ring-Modulated Laser

An optical source may include an optical gain chip that provides an optical signal and that is optically coupled to an SOI chip. The optical gain chip may include a reflective layer. Moreover, the SOI chip may include: a first optical waveguide, a first ring resonator that selectively optically coupled to a second optical waveguide and that performs phase modulation and filtering of the optical signal, the second optical waveguide, an amplitude modulator, and an output port. Note that the reflective layer in the optical gain chip and the amplitude modulator may define an optical cavity. Furthermore, a resonance of the first ring resonator may be aligned with a lasing wavelength, and the resonance of the first ring resonator and a resonance of the amplitude modulator may be offset from each other. Additionally, modulation of the first ring resonator and the amplitude modulator may be in-phase with each other. 1. An optical source , comprising:an optical gain chip configured to provides an optical signal, wherein the optical gain chip comprises a reflective layer at one end of the optical gain chip; and a first optical waveguide configured to convey the optical signal;', 'a first ring resonator selectively optically coupled to the first optical waveguide, wherein the first ring resonator is configured to perform phase modulation and filtering of the optical signal;', 'a second optical waveguide selectively optically coupled to the first ring resonator and configured to convey at least a first portion of the optical signal;', 'an amplitude modulator, optically coupled to the second optical waveguide, configured to reflect at least a second portion of the optical signal back into the second optical waveguide and to pass and amplitude modulate at least a third portion of the optical signal; and', 'an output port, optically coupled to the optical modulator, configured to provide at least the third portion of the optical signal, wherein the reflective layer in the optical ...

Rapidly Tunable Silicon Modulated Laser

An optical source may include an optical gain chip that provides an optical signal and that is optically coupled to an SOI chip. The optical gain chip may include a reflective layer. Moreover, the SOI chip may include: a common optical waveguide, a splitter that splits the optical signal into optical signals, a first pair of resonators that are selectively optically coupled to the common optical waveguide and that are configured to perform modulation and filtering of the optical signals, and a first bus optical waveguide that is selectively optically coupled to the first pair of resonators. Furthermore, resonance wavelengths of the resonators may be offset from each other with a (e.g., fixed) separation approximately equal or corresponding to a modulation amplitude, and a reflectivity of the first pair of resonators may be approximately independent of the modulation. 1. An optical source , comprising:an optical gain chip configured to provides an optical signal, wherein the optical gain chip comprises a reflective layer at one end of the optical gain chip; and a common optical waveguide configured to convey the optical signal;', 'a splitter, optically coupled to the common optical waveguide, configured to split the optical signal into optical signals on through optical waveguides;', 'a first pair of resonators selectively optically coupled to the through optical waveguides, wherein the resonators are configured to perform modulation and filtering of the optical signals; and', 'a first bus optical waveguide selectively optically coupled to the first pair of resonators, wherein the reflective layer in the optical gain chip and the first pair of resonators defines a first optical cavity,', 'wherein, during operation of the optical source, resonance wavelengths of the resonators are offset from each other with a separation approximately equal to a modulation amplitude, and', 'wherein, during operation of the optical source, a reflectivity of the first pair of resonators ...

Semiconductor device and fabrication method

Disclosed herein is a semiconductor device comprising: a silicon substrate; a germanium layer; and a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; at least one layer containing III-V compound quantum dots wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth.

QUANTUM-DOT PHOTONICS

Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide. 1. A quantum-dot (QD) semiconductor optical amplifier (SOA) , comprising:a silicon substrate;a QD layer above the silicon substrate, the QD layer including an active gain region to amplify a lasing mode received from an optical signal generator, the QD layer having a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects;a waveguide included in an upper silicon layer of the silicon substrate; anda mode converter included in the waveguide to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.2. The QD SOA of claim 1 , wherein the QD layer includes a plurality of tapered junctions claim 1 , each of the plurality of tapered junctions being at opposite ends of the QD layer along a length of the QD SOA.3. The QD SOA of claim 2 , wherein a width of the QD layer between the tapered junctions is greater than a width of the waveguide.4. The QD SOA of claim 1 , wherein:the QD layer is on top of a portion of the waveguide; andthe mode converter comprises a plurality of tapers in the waveguide, the tapers being under the QD layer.5. The QD SOA of claim 4 , wherein the waveguide includes a first width and a second width claim 4 , the first width being greater than the second width ...

OPTICAL CLADDING LAYER DESIGN

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer. 120-. (canceled)21. A semiconductor device comprising:a cladding layer defining a longitudinal direction transverse to a surface of the cladding layer and a lateral direction parallel to the cladding layer; anda III-V semiconductor layer on the surface of the cladding layer, the III-V semiconductor layer having a wider lateral width that is wider than a narrow lateral width of the cladding layer, the III-V semiconductor layer having an active region with light confined in the III-V semiconductor layer by the narrow lateral width of the cladding layer.22. The semiconductor device of claim 21 , further comprising a silicon semiconductor layer positioned on another surface of the cladding layer opposite the surface of the cladding layer.23. The semiconductor device of claim 22 , wherein the light is of at least a first wavelength claim 22 , and wherein the silicon semiconductor layer is shaped to form a waveguide for at least a first wavelength of light.24. The semiconductor device of claim 23 , wherein the silicon semiconductor layer is shaped to form a shunt of silicon that extends into the cladding layer.25. The semiconductor device of claim 24 , wherein the shunt has dimensions smaller than the first wavelength of light in the silicon semiconductor layer.26. The semiconductor device of claim 24 , wherein the ...

TECHNIQUES FOR VERTICAL CAVITY SURFACE EMITTING LASER OXIDATION

Some embodiments relate to a vertical cavity surface emitting laser (VCSEL) device including a VCSEL structure overlying a substrate. The VCSEL structure includes a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors. A first spacer laterally encloses the second reflector. The first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector. 1. A vertical cavity surface emitting laser (VCSEL) device , comprising:a substrate;a VCSEL structure overlying the substrate, wherein the VCSEL structure comprises a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors; anda first spacer laterally enclosing the second reflector, wherein the first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector.2. The VCSEL device of claim 1 , wherein the second reflector comprises a plurality of recesses disposed along the sidewall of the second reflector.3. The VCSEL device of claim 2 , wherein the first spacer continuously extends from an upper surface of the optically active region to the plurality of recesses of the second reflector.4. The VCSEL device of claim 2 , wherein the first plurality of protrusions directly contacts the plurality of recesses.5. The VCSEL device of claim 1 , further comprising:a masking layer overlying the VCSEL structure, wherein the first plurality of protrusions extends along a sidewall of the masking layer.6. The VCSEL device of claim 5 , further comprising:a second spacer laterally enclosing the first spacer and the VCSEL structure, wherein the second spacer comprises a second plurality of protrusions that extends along a sidewall of the first spacer.7. The VCSEL device of claim 6 , wherein an upper surface of the masking layer claim 6 , an upper surface of the first spacer claim 6 , and an upper surface of the second spacer are aligned.8. The ...

TEMPLATE-BASED EPITAXIAL GROWTH OF LATTICE MISMATCHED MATERIALS ON SILICON

The embodiments of the present disclosure describe forming a semiconductor layer (e.g., III-V semiconductor material) on a silicon substrate using a template. In one embodiment, the template is patterned to form a plurality of cylindrical openings or pores that expose a portion of the underlying silicon substrate. The material of the semiconductor is disposed into the pores to form individual crystals or monocrystals. Because of the lattice mismatch between the crystalline silicon substrate and the material of the semiconductor layer, the monocrystals may include defects. However, the height of the pores is controlled such that these defects terminate at a sidewall of the template. Thus, the monocrystals can be used to form a single sheet (or single crystal) semiconductor layer above that template that is defect free. 1. A photonic device , comprising:a crystalline silicon substrate;a template comprising an inert material disposed on the silicon substrate, wherein the template comprises a plurality of pores that extends from a top surface of the template to the silicon substrate,wherein a respective monocrystal of a semiconductor material is disposed in each of the plurality of pores, and wherein the semiconductor material has a different lattice constant than the silicon substrate; anda semiconductor layer disposed on the top surface, wherein the semiconductor layer is epitaxially disposed on the respective monocrystals to form a single crystalline layer.2. The photonic device of claim 1 , wherein each of the plurality of pores contains only one monocrystal.3. The photonic device of claim 1 , wherein at least one of the respective monocrystal contains a defect resulting from lattice mismatch claim 1 , wherein the defect extends at an offset angle relative to a surface of the silicon substrate on which the template is disposed.4. The photonic device of claim 3 , wherein the defect terminates at a sidewall of one of the plurality of pores claim 3 , wherein the ...

MONOLITHIC DIODE LASER ARRANGEMENT AND METHOD FOR PRODUCING THE MONOLITHIC DIODE LASER

A monolithic diode laser arrangement contains a plurality of individual emitters which are arranged adjacent to one another on a common supporting substrate and which in each case have contact windows for electrical contact which are arranged on the respective individual emitters on a front face opposite the supporting substrate. A method for producing such a diode laser arrangement and a laser device having such a diode laser arrangement are further described. 1. A monolithic diode laser configuration , comprising:a common carrier substrate; and an epitaxial substrate; and', 'a multilayered epitaxial structure applied on said epitaxial substrate such that said epitaxial substrate is not completely covered by said multilayered epitaxial structure, said multilayered epitaxial structure having at least one p-doped cladding layer and at least one n-doped cladding layer, wherein said multilayered epitaxial structure having a p-type contact window for electrically contacting said p-doped cladding layer and disposed on a front side of said multilayered epitaxial structure and wherein said epitaxial substrate having an n-type contact window for electrically contacting said n-doped cladding layer and disposed on a front side on said epitaxial substrate in a region in which said epitaxial substrate is not covered by said multilayered epitaxial structure., 'a plurality of individual emitters disposed alongside one another on said common carrier substrate and each having contact windows for electrical contacting, said contact windows disposed at a front side of said individual emitters opposite said common carrier substrate, each of said individual emitters containing2. The monolithic diode laser configuration according to claim 1 , further comprising a bond plane claim 1 , said individual emitters are connected to said common carrier substrate indirectly via said bond plane disposed between said individual emitters and said common carrier substrate.3. The monolithic diode ...

INTEGRATED LASER ARRAYS BASED DEVICES

Integrated laser arrays based devices and systems and methods of forming the integrated laser arrays based devices and systems are provided. In one aspect, an integrated display includes a semiconductor substrate including a first side and a second side, an array of active-matrix light-emitting pixels, each of the pixels including one or more light-emitting elements formed on the first side and at least one non-volatile memory coupled to the one or more light-emitting elements, each of the light-emitting elements including a lasing structure that has an optical resonator and one or more semiconductor layers in the optical resonator and is operable to emit a laser light, one or more integrated circuits formed on the second side, and conductive interconnects penetrating from the second side through the semiconductor substrate and conductively coupling the one or more integrated circuits to the light-emitting elements. 1. An integrated device comprising:a semiconductor substrate including a first side and a second side;an array of active-matrix light-emitting pixels, each of the pixels including one or more light-emitting elements formed on the first side and at least one non-volatile memory coupled to the one or more light-emitting elements, each of the light-emitting elements including a lasing structure that has an optical resonator and one or more semiconductor layers in the optical resonator and is operable to emit laser light;one or more integrated circuits formed on the second side; andconductive interconnects penetrating from the second side through the semiconductor substrate and conductively coupling the one or more integrated circuits to the light-emitting elements.2. The integrated device of claim 1 , wherein the optical resonator comprises a pair of distributed Bragg reflectors claim 1 , and the one or more semiconductor layers are arranged between the pair of distributed Bragg reflectors.3. The integrated device of claim 1 , wherein each of the light- ...

Optical waveguide element and method for manufacturing optical waveguide element

There is provided an optical waveguide element and a method for manufacturing an optical waveguide element that make it possible, while reducing the cost of manufacturing the optical waveguide element, to reliably eliminate stray light that affects primary signal light. The optical waveguide element of the present invention includes a silicon layer and silicon-dioxide layers placed above and below the silicon layer, in which the silicon layer includes a ridge optical waveguide and an impurity-implanted region placed at not less than a predetermined distance from the ridge optical waveguide.

PACKAGING OPTOELECTRONIC COMPONENTS AND CMOS CIRCUITRY USING SILICON-ON-INSULATOR SUBSTRATES FOR PHOTONICS APPLICATIONS

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure. 1. A method to construct a package structure , comprising:fabricating a first integrated circuit chip comprising a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises a bulk substrate layer, a buried oxide layer disposed on the bulk substrate layer, an active silicon layer disposed on the buried oxide layer, and a BEOL (back-end-of-line) structure formed over the active silicon layer, wherein the active silicon layer comprises active circuitry and an integrated optical waveguide structure;bonding a first surface of an interposer substrate to the BEOL structure of the first integrated circuit chip;forming conductive through vias in the interposer substrate in alignment with contact pads of the BEOL structure, and forming contact pads on a second surface of the interposer substrate;removing the bulk substrate layer to expose the buried oxide layer;forming one or more inverted pad structures through the exposed buried oxide layer down to buried pads within the BEOL ...

Tunable laser source, optical transmitter, and optical transmitter and receiver module

A tunable laser source includes a mirror, a tunable filter, and a semiconductor optical amplifier integrated device including first, second, and third semiconductor optical amplifiers between a first end face facing toward the tunable filter and a second end face facing away from the first end face. The first amplifier is closer to the first end face than the second and third amplifiers. The semiconductor optical amplifier integrated device further includes a partially reflecting mirror and an optical divider that are disposed between the first amplifier and the second and third amplifiers. The partially reflecting mirror is closer to the first amplifier than the optical divider. The optical divider includes first and second branches connected to the second and third semiconductor optical amplifiers, respectively. The tunable filter and the first amplifier are disposed in an optical path between the partially reflecting mirror and the mirror that form a laser resonator.

PHOTONIC CRYSTAL LASER AND STRAIN MEASURING DEVICE

A photonic crystal laser and a strain measuring device are provided. The photonic crystal laser includes a disk-shaped photonic crystal structure two-dimensionally disposed in a matrix on a disposition plane and a flexible substrate disposed to support the photonic crystal structure and to cover at least a side surface of the photonic crystal structure. 1. A photonic crystal laser comprising:a disk-shaped photonic crystal structure two-dimensionally disposed in a matrix on a disposition plane; anda flexible substrate disposed to support the photonic crystal structure and to cover at least a side surface of the photonic crystal structure.2. The photonic crystal laser as set forth in claim 1 , wherein an arrangement period of the photonic crystal structure is between 550 and 700 nm claim 1 , andthe photonic crystal structure oscillates in a E-point band-edge mode.3. The photonic crystal laser as set forth in claim 2 , wherein a laser gain medium of the photonic crystal structure is InGaAsP spontaneously emitted at an infrared area or AlGaAs spontaneously emitted around 650 nm.4. The photonic crystal laser as set forth in claim 3 , wherein the photonic crystal structure includes an InGaAsP lower cladding layer claim 3 , a quantum well InGaAsP active layer claim 3 , and an InGaAsP upper cladding layer that are sequentially stacked.5. The photonic crystal laser as set forth in claim 1 , wherein the flexible substrate includes polydimethylsiloxane (PDMS) claim 1 , polyimide or polyethylene terephthalate (PET).6. The photonic crystal laser as set forth in claim 1 , further comprising:pressure applying means for applying a strain to the flexible substrate.7. A method for fabricating a photonic crystal layer claim 1 , comprising:forming an etch-stop layer on a substrate;forming a buffer layer on the etch-stop layer;forming a photonic crystal active layer on the buffer layer;coating a resist on the photonic crystal active layer and patterning the coated resist to form a ...

METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT

A method of manufacturing a light emitting element includes, sequentially, (a) forming a mask layer for selective growth; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and (f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer. 1. A method of manufacturing a light emitting element comprising , sequentially:(a) forming a mask layer for selective growth formed from a material different from a material that configures a first compound semiconductor layer on a region outside an element forming region on a substrate for manufacturing a light emitting element;(b) forming a layered structure body by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the element forming region;(c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film;(d) fixing the second light reflecting layer to a support substrate;(e) ...

METHOD OF MANUFACTURING A PHOTONIC INTEGRATED CIRCUIT OPTICALLY COUPLED TO A LASER OF III-V MATERIAL

A method of manufacturing an integrated circuit including photonic components on a silicon layer and a laser made of a III-V group material includes providing the silicon layer positioned on a first insulating layer that is positioned on a support. First trenches are etched through the silicon layer and stop on the first insulating layer, and the first trenches are covered with a silicon nitride layer. Second trenches are etched through a portion of the silicon layer, and the first and second trenches are filled with silicon oxide, which are planarized. The method further includes removing the support and the first insulating layer, and bonding a wafer including a III-V group heterostructure on the rear surface of the silicon layer. 110-. (canceled)11. A method of manufacturing an integrated circuit comprising photonic components on a silicon layer and a laser comprising a III-V group material , the method comprising:a) providing the silicon layer having a front surface and a rear surface, with the rear surface on a first insulating layer that is on a support;b) etching the front surface to form first trenches through the silicon layer and stopping on the first insulating layer, and covering walls and a bottom of the first trenches with a silicon nitride layer;c) etching the front surface to form second trenches through a portion of the silicon layer, the second trenches being formed at a location of at least some of the photonic components;d) filling the first and second trenches with silicon oxide and planarizing the silicon oxide to the front surface of the silicon layer;e) removing the support and the first insulating layer, and stopping on the rear surface of the silicon layer and the silicon nitride layer; andf) bonding, on the rear surface of the silicon layer, a wafer comprising a III-V group heterostructure, and etching the wafer to delimit the laser.12. The method of claim 11 , further comprising between steps d) and e):g) covering the front surface of the ...

HETEROGENEOUS SPECTROSCOPIC TRANSCEIVING PHOTONIC INTEGRATED CIRCUIT SENSOR

Described herein are optical sensing devices for photonic integrated circuits (PICs). A PIC may comprise a plurality of waveguides formed in a silicon on insulator (SOI) substrate, and a plurality of heterogeneous lasers, each laser formed from a silicon material of the SOI substrate and to emit an output wavelength comprising an infrared wavelength. Each of these lasers may comprise a resonant cavity included in one of the plurality of waveguides, and a gain material comprising a non-silicon material and adiabatically coupled to the respective waveguide. A light directing element may direct outputs of the plurality of heterogeneous lasers from the PIC towards an object, and one or more detectors may detect light from the plurality of heterogeneous lasers reflected from or transmitted through the object. 1. A photonic integrated circuit , comprising:a silicon substrate;a plurality of waveguides formed in the substrate and positioned in a plane;a plurality of lasers coupled to the waveguides and configured to produce light having wavelengths that are different from one another;at least one coupler positioned in the plane and configured to couple light from the lasers out of the waveguides to form multi-wavelength light in a different plane;an emission lens configured to direct the multi-wavelength light toward an object, andat least one detector positioned in the plane and configured to detect at least a portion of returning light that is returned from the object.2. The photonic integrated circuit of claim 1 , wherein the returning light is reflected or scattered from the object.3. The photonic integrated circuit of claim 1 , further comprising circuitry configured to analyze at least one signal from the at least one detector to determine a physical property of the object at the wavelengths.4. The photonic integrated circuit of claim 1 , wherein each waveguide includes a resonant cavity claim 1 , and each laser includes non-silicon gain material coupled to a ...

Optoelectronic Semiconductor Device and Method for Producing an Optoelectronic Semiconductor Device

An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a carrier having at least two electrically conductive components connected by an electrically insulating material, an optoelectronic semiconductor chip fixed to the carrier at a top side of the carrier, the optoelectronic semiconductor chip configured to emit electromagnetic radiation, a total internal reflection lens and a housing surrounding the total internal reflection lens laterally, wherein the electrically insulating material does not protrude over the electrically conductive components at the top side of the carrier, wherein the housing and the total internal reflection lens are arranged at a radiation exit side of the optoelectronic semiconductor chip, and wherein the total internal reflection lens does not protrude over the housing at an upper side of the optoelectronic semiconductor device, the upper side facing away from the carrier. 114-. (canceled)15. An optoelectronic semiconductor device comprising:a carrier comprising at least two electrically conductive components connected by an electrically insulating material;an optoelectronic semiconductor chip fixed to the carrier at a top side of the carrier, the optoelectronic semiconductor chip configured to emit electromagnetic radiation;a total internal reflection lens; anda housing surrounding the total internal reflection lens laterally,wherein the electrically insulating material does not protrude over the electrically conductive components at the top side of the carrier,wherein the housing and the total internal reflection lens are arranged at a radiation exit side of the optoelectronic semiconductor chip, andwherein the total internal reflection lens does not protrude over the housing at an upper side of the optoelectronic semiconductor device, the upper side facing away from the carrier.16. The optoelectronic ...

METHOD FOR PRODUCING A PLURALITY OF TRANSFERABLE COMPONENTS AND COMPOSITE COMPONENT OF COMPONENTS

A method for producing a composite component () and a composite component () comprising a plurality of components (), a removable sacrificial layer (), an anchoring structure () and a common intermediate carrier () are specified. The components each have a semiconductor body () comprising an active zone (), are configured to generate coherent electromagnetic radiation and are arranged on the common intermediate carrier. The sacrificial layer is arranged in a vertical direction between the intermediate carrier and the components. The anchoring structure comprises a plurality of anchoring elements (A, B), wherein the anchoring structure and the sacrificial layer provide a mechanical connection between the intermediate carrier and the components. Without the sacrificial layer, the components are mechanically connected to the intermediate carrier solely via the anchoring elements, wherein the anchoring elements are formed in such a way that under mechanical load they release the components so that the components are detachable from the intermediate carrier and are thus formed to be transferable. 1. A method of producing a plurality of transferable components on a common intermediate carrier , wherein the components are configured to generate coherent electromagnetic radiation and each comprise a semiconductor body having an active zone , comprising the following steps:providing a semiconductor structure on the intermediate carrier, wherein the semiconductor structure is separable into a plurality of semiconductor bodies of the components and wherein a sacrificial layer is arranged in vertical direction between the semiconductor structure and the intermediate carrier;forming an anchoring structure having a plurality of anchoring elements; andremoving the sacrificial layer, as a result of which the components are mechanically connected to the intermediate carrier solely via the anchoring structure, wherein the anchoring elements release the components under mechanical ...

SURFACE-EMITTING SEMICONDUCTOR LASER CHIP

Surface-emitting semiconductor laser chip () comprising a carrier (), a layer stack () arranged on the carrier () and having a layer plane (L) extending perpendicularly to the stacking direction (R), a front side contact () and a rear side contact (), in which in operation a predetermined distribution of a current density (I) is achieved by means of current constriction in the layer stack (), wherein in the carrier () an electrical through-connection () is provided, which extends from a bottom surface () of the carrier () facing away from the layer stack () to a surface of the carrier () facing the layer stack (), and the distribution of the current density (I) is significantly influenced by the shape and size of the cross-section of the through-connection () parallel to the layer plane (L) on the surface facing the layer stack. 1. A surface-emitting semiconductor laser chip having a carrier , a layer stack arranged on the carrier and having a layer plane extending perpendicular to a stacking direction , a front side contact and a rear side contact , in whichin operation a predetermined distribution of a current density is achieved by means of current constriction in the layer stack, wherein the carrier an electrical through-connection is provided, which extends from a bottom surface of the carrier facing away from the layer stack to a surface of the carrier facing the layer stack, andthe distribution of the current density is significantly influenced by the shape and size of a cross-section of the through-connection parallel to the layer plane on the surface facing the layer stack.2. The surface-emitting semiconductor laser chip according to claim 1 ,in which the semiconductor laser chip forms a gain-guided semiconductor laser.3. The surface-emitting semiconductor laser chip according to claim 1 ,in which the rear side contact is arranged between the layer stack and the carrier, and directly adjoins the layer stack on one side and to the through-connection on the ...

Method for Producing a Semiconductor Layer Sequence

A method for producing a semiconductor layer sequence is disclosed. In an embodiment the includes growing a first nitridic semiconductor layer at the growth side of a growth substrate, growing a second nitridic semiconductor layer having at least one opening on the first nitridic semiconductor layer, removing at least pail of the first nitridic semiconductor layer through the at least one opening in the second nitridic semiconductor layer, growing a third nitridic semiconductor layer on the second nitridic semiconductor layer, wherein the third nitridic semiconductor layer covers the at least one opening at least in places in such a way that at least one cavity free of a semiconductor material is present between the growth substrate and a subsequent semiconductor layers and removing the growth substrate.

SEMICONDUCTOR LIGHT EMITTING DEVICE

According to one embodiment, a semiconductor light emitting device includes a substrate, a semiconductor light emitting structure including an active layer, a first light reflecting structure disposed between the substrate and the semiconductor light emitting structure, a second light reflecting structure disposed on an upper side of the semiconductor light emitting structure and a pair of electrodes applying a current to the semiconductor light emitting structure. At least one of the first and second light reflecting structures is a multilayer reflective film including a plurality of structure layers, each structure layer including a high refractive index region and a low refractive index region which are disposed such that a refractive index of the structure layer is periodically changed, and a low refractive index layer disposed between two adjacent structure layers. 1. A semiconductor light emitting device , comprising:a substrate;a semiconductor light emitting structure including an active layer;a first light reflecting structure disposed between the substrate and the semiconductor light emitting structure;a second light reflecting structure disposed on an upper side of the semiconductor light emitting structure; anda pair of electrodes applying a current to the semiconductor light emitting structure,wherein at least one of the first light reflecting structure and the second light reflecting structure is a multilayer reflective film including a plurality of structure layers, each structure layer including a high refractive index region and a low refractive index region which are disposed such that a refractive index of the structure layer is periodically changed, and a low refractive index layer disposed between two adjacent structure layers.2. The semiconductor light emitting device according to claim 1 , {'br': None, 'i': d', 'n, '<(¼)·λ\u2003\u2003(1).'}, 'wherein a thickness d of the low refractive index layer, a refractive index n of the low refractive ...

GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY

A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer. 1. A method of forming a germanium waveguide comprising the steps of:forming trenches penetrating into a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer to form a stack of a substrate strip, a germanium strip, and a first silicon strip; andcoating the stack and structure adjacent thereto with a silicon nitride layer.2. The method of claim 1 , further comprising the step of defining contact openings in the silicon nitride on sides of the first silicon strip covering the germanium strip.3. The method of claim 2 , further comprising the step of forming conductive contacts in said contact openings.4. The method of claim 1 , further comprising claim 1 , after the forming trenches and coating the stack claim 1 , a step of widening the trenches to form openings in the substrate so that the germanium strip rests on a silicon base of the silicon substrate.5. A germanium waveguide comprising:a P-type silicon substrate including a central region delimited by lateral trenches penetrating into the silicon substrate: coated witha heavily-doped N-type germanium strip coating the central region;a first N-type doped silicon strip coating the germanium strip; anda silicon nitride layer coating the germanium strip and doped silicon strip at the central region and structures adjacent thereto.6. The germanium waveguide of claim 5 , wherein the lateral trenches are widened in a portion penetrating into the silicon substrate claim 5 , the germanium strip resting on the central region of the silicon substrate claim 5 , wherein the central region has a width smaller ...

HETEROGENEOUS SPECTROSCOPIC TRANSCEIVING PHOTONIC INTEGRATED CIRCUIT SENSOR

Described herein are optical sensing devices for photonic integrated circuits (PICs). A PIC may comprise a plurality of waveguides formed in a silicon on insulator (SOI) substrate, and a plurality of heterogeneous lasers, each laser formed from a silicon material of the SOI substrate and to emit an output wavelength comprising an infrared wavelength. Each of these lasers may comprise a resonant cavity included in one of the plurality of waveguides, and a gain material comprising a non-silicon material and adiabatically coupled to the respective waveguide. A light directing element may direct outputs of the plurality of heterogeneous lasers from the PIC towards an object, and one or more detectors may detect light from the plurality of heterogeneous lasers reflected from or transmitted through the object. 1. A photonic integrated circuit , comprising:a plurality of waveguides positioned in a plane, each waveguide configured to deliver monochromatic light having a wavelength that differs from the wavelengths of the monochromatic light from the other waveguides;at least one coupler positioned in the plane and configured to direct the light from the waveguides out of the plane to form multi-wavelength light;an emission lens configured to direct the multi-wavelength light toward an object; andat least one detector positioned in the plane and configured to detect at least a portion of returning light that is returned from the object.2. The photonic integrated circuit of claim 1 , wherein the returning light is reflected or scattered from the object.3. The photonic integrated circuit of claim 1 , further comprising circuitry configured to analyze at least one signal from the at least one detector to determine a physical property of the object at the wavelengths.4. The photonic integrated circuit of claim 1 , wherein each waveguide includes a resonant cavity claim 1 , and each laser includes non-silicon gain material coupled to a corresponding resonant cavity.5. The ...

Optical amplifier and optical switch device

An optical amplifier includes a polarization splitter, a polarization rotator, first and second optical couplers, and first and second semiconductor optical amplifying devices. The TE polarized wave of light split by the polarization splitter is input to a first input port of the first optical coupler. The TM polarized wave of the split light is converted into a TE polarized wave by the polarization rotator to be input to a second input port of the first optical coupler. First light and second light output from a first output port and a second output port of the first optical coupler are amplified by the first semiconductor optical amplifying device and the second semiconductor optical amplifying device to be input to a first input port and a second input port of the second optical coupler, respectively. Third light is output from an output port of the second optical coupler.

III-V Photonic Integration on Silicon

Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits. 120-. (canceled)21. An article comprising: (a) a substrate having a first surface, the substrate comprising single-crystal silicon;', '(b) a first dielectric layer that is disposed on and in direct contact with the first surface, the first dielectric layer comprising a first dielectric material and a second surface that is distal to the first surface; and', '(c) a first semiconductor layer that is disposed on and in direct contact with the second surface, the first semiconductor layer having a third surface that is distal to the second surface, and the first semiconductor layer including a first waveguide;, '(1) a semiconductor-on-insulator substrate, the semiconductor-on-insulator substrate comprising(2) a compound semiconductor structure comprising a first compound semiconductor layer and at least one quantum well; and(3) a bonded interface located at the third surface, the semiconductor structure and the compound semiconductor structure being joined at the bonded interface such that the bonded interface is characterized by a lattice mismatch;wherein the first compound semiconductor layer and the first waveguide are evanescently coupled.22. The article of further comprising (4) an electrical device claim 21 , the electrical device being at least partially formed in the first semiconductor layer.23. The article of further comprising (4) an electrical device claim 21 , the electrical device being at least partially formed in the compound ...

METHODS AND SYSTEM FOR WAVELENGTH TUNABLE OPTICAL COMPONENTS AND SUB-SYSTEMS

Wavelength division multiplexing (WDM) has enabled telecommunication service providers to provide multiple independent multi-gigabit channels on one optical fiber.-To meet demands for improved performance, increased integration, reduced footprint, reduced power consumption, increased flexibility, re-configurability, and lower cost monolithic optical circuit technologies and microelectromechanical systems (MEMS) have become increasingly important. However, further integration via microoptoelectromechanical systems (MOEMS) of monolithically integrated optical waveguides upon a MEMS provide further integration opportunities and functionality options. Such MOEMS may include MOEMS mirrors and optical waveguides capable of deflection under electronic control. In contrast to MEMS devices where the MEMS is simply used to switch between two positions the state of MOEMS becomes important in all transition positions. Improvements to the design and implementation of such MOEMS mirrors, deformable MOEMS waveguides, and optical waveguide technologies supporting MOEMS devices are presented where monolithically integrated optical waveguides are directly supported, moved and/or deformed by a MEMS. 1. A device comprising:an optical waveguide structure comprising a first predetermined portion formed from a plurality of three-dimensional (3D) optical waveguides for routing an optical signal upon a substrate and a second predetermined portion comprising an input 3D optical waveguide for routing the optical signals from a first subset of the plurality of 3D optical waveguides to or from the input 3D optical waveguide; anda rotational microoptoelectromechanical (MOEMS) element comprising a pivot and an actuator supporting the input 3D optical waveguide; whereina predetermined rotation of the MOEMS element under the motion of the actuator results in an alignment of the input 3D optical waveguide with a predetermined 3D optical waveguide of the first subset of the plurality of 3D optical ...

METHODS AND SYSTEM FOR WAVELENGTH TUNABLE OPTICAL COMPONENTS AND SUB-SYSTEMS

Wavelength division multiplexing (WDM) has enabled telecommunication service providers to provide multiple independent multi-gigabit channels on one optical fiber.-To meet demands for improved performance, increased integration, reduced footprint, reduced power consumption, increased flexibility, re-configurability, and lower cost monolithic optical circuit technologies and microelectromechanical systems (MEMS) have become increasingly important. However, further integration via microoptoelectromechanical systems (MOEMS) of monolithically integrated optical waveguides upon a MEMS provide further integration opportunities and functionality options. Such MOEMS may include MOEMS mirrors and optical waveguides capable of deflection under electronic control. In contrast to MEMS devices where the MEMS is simply used to switch between two positions the state of MOEMS becomes important in all transition positions. Improvements to the design and implementation of such MOEMS mirrors, deformable MOEMS waveguides, and optical waveguide technologies supporting MOEMS devices are presented where monolithically integrated optical waveguides are directly supported, moved and/or deformed by a MEMS. 1. An optical device comprising:a substrate; a rotatable microelectromechanical systems (MEMS) element; and', 'a first optical waveguide formed upon the rotatable MEMS element rotating under action of the rotatable MEMS element; and', 'a grating formed upon the rotatable MEMS element optically coupled to a facet of the first optical waveguide;, 'a rotational microoptoelectromechanical systems (MOEMS) element integrated upon the substrate in a first predetermined position comprisinga second optical waveguide integrated upon the substrate having a first end disposed at a first predetermined position with respect to the rotational MOEMS element; whereinrotation of the grating under action of the rotatable MEMS element reflects a predetermined portion of optical signals coupled to it from the ...

METHODS AND SYSTEM FOR WAVELENGTH TUNABLE OPTICAL COMPONENTS AND SUB-SYSTEMS

Wavelength division multiplexing (WDM) has enabled telecommunication service providers to provide multiple independent multi-gigabit channels on one optical fiber. To meet demands for improved performance, increased integration, reduced footprint, reduced power consumption, increased flexibility, re-configurability, and lower cost monolithic optical circuit technologies and microelectromechanical systems (MEMS) have become increasingly important. However, further integration via microoptoelectromechanical systems (MOEMS) of monolithically integrated optical waveguides upon a MEMS provide further integration opportunities and functionality options. Such MOEMS may include MOEMS mirrors and optical waveguides capable of deflection under electronic control. In contrast to MEMS devices where the MEMS is simply used to switch between two positions the state of MOEMS becomes important in all transition positions. Improvements to the design and implementation of such MOEMS mirrors, deformable MOEMS waveguides, and optical waveguide technologies supporting MOEMS devices are presented where monolithically integrated optical waveguides are directly supported, moved and/or deformed by a MEMS. 1. An optical source comprising:a substrate;an optical cavity comprising a first high reflectivity facet, a second high reflectivity facet, and a semiconductor optical amplifier (SOA) disposed between the first high reflectivity facet and the second high reflectivity facet; whereinthe first high reflectivity facet comprises at least a tunable optical wavelength filter employing a rotational microoptoelectromechanical (MOEMS) element integrated upon the substrate;the first high reflectivity facet has a high reflectivity over a predetermined bandwidth determined by the tunable optical wavelength filter; anda center wavelength of the optical source can be set to one of a plurality of predetermined wavelengths within a predetermined wavelength range based upon setting the tunable optical ...

METHOD AND SYSTEM FOR HETEROGENEOUS SUBSTRATE BONDING FOR PHOTONIC INTEGRATION

A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector. 1. A hybrid integrated optical device comprising:a substrate;a first pad, disposed on a first region of the substrate and bonded to the substrate;a device;a second pad, disposed on a first region of the device and bonded to the device; and [{'sub': 0.7', '0.3, 'the bonding metal comprises InPd;'}, 'the bonding metal is disposed between the first pad and the second pad;', 'the bonding metal is bonded to the first pad and the second pad; and', 'the bonding metal, the first pad, and the second pad secure the device to the substrate., 'a bonding metal, wherein2. The hybrid integrated optical device of claim 1 , wherein:the first pad comprises at least one of Ti, Cr, Pt, Ni or W; andthe second pad comprises at least one of Ti, Cr, Pt, Ni or W.3. The hybrid integrated optical device of claim 1 , wherein:the substrate comprises a waveguide; andthe device is a compound semiconductor device that emits light, wherein the light is optically coupled into the waveguide.4. The hybrid integrated optical device of claim 1 , wherein the substrate is a silicon-on-insulator substrate comprising a silicon handle portion claim 1 , an oxide layer claim 1 , and a silicon layer.5. The hybrid integrated optical device of claim 4 , wherein a first portion of the silicon layer forms a recess proximate the first pad claim 4 , and wherein a height of the device exceeds a height of a second portion of the silicon layer.6. The hybrid integrated optical device of claim 4 , wherein a first ...

LASER DEVICE AND PROCESS FOR FABRICATING SUCH A LASER DEVICE

The invention relates to a III-V heterostructure laser device () arranged in and/or on silicon, comprising: 1. III-V heterostructure laser device arranged in and/or on silicon , comprising:a III-V heterostructure gain medium; andan optical rib waveguide, arranged facing the gain medium and comprising a slab waveguide equipped with a longitudinal rib, the optical rib waveguide being arranged in the silicon;wherein the optical rib waveguide is oriented so that at least one Bragg grating is arranged on that side of the slab waveguide which is proximal relative to the gain medium and in that the rib is placed on that side of the slab waveguide that is distal relative to the gain medium.2. Laser device according to claim 1 , wherein it comprises two Bragg gratings arranged on either side of the III-V heterostructure gain medium.3. Laser device according to claim 2 , wherein the Bragg grating that is located on the same side as an output grating possesses a reflectivity of about 50% and in that the Bragg grating on the side opposite the gain medium possesses a reflectivity higher than 90%.4. Laser device according to claim 1 , wherein it comprises a Bragg grating facing the III-V heterostructure gain medium.5. Laser device according to claim 4 , wherein the Bragg grating comprises a quarter-wave plate in order to ensure a single-mode operation.6. Laser device according to claim 4 , wherein the reflectivity of the Bragg grating is comprised between 65% and 80%.7. Laser device according to claim 1 , wherein the width of the Bragg grating is larger than that of the rib.8. Laser device according to claim 1 , wherein the width of the Bragg grating is substantially equal to the width of the slab waveguide.9. Laser device according to claim 1 , wherein the width of the rib of the rib waveguide increases in the direction of an output waveguide in order to form a mode converter.10. Laser device according to claim 9 , wherein the minimum width of the rib is comprised between 0.4 μm ...

METHOD OF FABRICATING AN OPTOELECTRONIC COMPONENT

A method of fabricating an optoelectronic component within a silicon-on-insulator substrate, the method comprising: providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a silicon base layer, a buried oxide (BOX) layer on top of the base layer, and a silicon device layer on top of the BOX layer; etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; depositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region. 1. A method of fabricating an optoelectronic component within a silicon-on-insulator substrate , the method comprising:providing a silicon-on-insulator, SOI, substrate, the SOI substrate comprising a silicon base layer, a buried oxide, BOX, layer on top of the base layer, and a silicon device layer on top of the BOX layer;etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; anddepositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region,wherein the relative separation of the first active region and the second active region within the multistack epi layer is chosen based on the difference in depth of the first cavity region and the second cavity region, such that after the simultaneous deposition step, the first active region within in the ...

Method of manufacturing light emitting device

A method of manufacturing a light emitting device comprising: providing an element-structure wafer having a first substrate and a laser element structure on the first substrate, the laser element structure having ridges on a side opposite to the first substrate and raising layers respectively formed above the ridges; bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer; removing at least a portion of the first substrate to obtain a thinned bonded wafer; singulating the thinned bonded wafer to obtain a laser element with the second substrate; mounting the laser element with the second substrate on a heat dissipating member such that a laser element side of the laser element with the second substrate faces the heat dissipating member; and removing the second substrate from the laser element.

LASER APPARATUS AND RESERVOIR COMPUTING SYSTEM

To realize a reservoir computing system with a small size and reduced learning cost, provided is a laser apparatus including a laser; a feedback waveguide that is operable to feed light output from the laser back to the laser; an optical splitter that is provided in a path of the feedback waveguide and is operable to output a portion of light propagated in the feedback waveguide to outside; and a first ring resonator that is operable to be optically connected to the feedback waveguide, as well as a reservoir computing system including this laser apparatus. 1. A reservoir computing system comprising: a laser,', 'a feedback waveguide that is operable to feed light output from the laser back to the laser,', 'an optical splitter that is provided in a path of the feedback waveguide and is operable to output a portion of light propagated in the feedback waveguide to outside the feedback waveguide, and', 'a first ring resonator that is operable to be optically connected to the feedback waveguide;, 'a reservoir including a laser apparatus, wherein the laser apparatus includes'}an input node operable to supply the reservoir with an input signal corresponding to input data;an output node operable to output an output value corresponding to light output by the reservoir in response to the input data; andan output section operable to output output data corresponding to the output value.2. The reservoir computing system according to claim 1 , whereinthe laser apparatus further includes one or more second ring resonators, andeach of the one or more second ring resonators is operable to be optically connected to the first ring resonator directly or indirectly via another of the second ring resonators.3. The reservoir computing system according to claim 2 , whereina plurality of the second ring resonators are operable to be optically connected in series, andthe second ring resonator positioned at a first end among the plurality of second ring resonators is operable to be optically ...

CMOS-COMPATIBLE GERMANIUM TUNABLE LASER

A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap. 1. A semiconductor light emitter device , comprisinga substrate;an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, whereina gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other;the active layer is arranged on the bridgeposts and bridges the gap, and whereinthe semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.2. The light emitter device of claim 1 , wherein the substrate is a silicon-on-insulator substrate having a top silicon layer on an intermediate insulator layer claim 1 , which is arranged on a carrier substrate claim 1 , and wherein the gap reaches through the top silicon layer.3. The light emitter device of claim 1 , wherein the stressor layer either comprises or consists of a material layer deposited immediately on the active layer.4. The light emitter device of claim 3 , wherein the stressor layer either comprises or consists of a silicon nitride layer.5. The light emitter device of claim 1 , wherein the stressor layer comprises an electrically actuatable tuning layer claim 1 , which is configured to induce the tensile strain or a tensile strain component in the active layer upon electrical actuation of the tuning layer.6. The light emitter device of claim 5 , wherein the tuning layer is ...

MANUFACTURABLE RGB LASER DIODE SOURCE AND SYSTEM

A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength. 137.-. (canceled)38. An integrated multi-wavelength light emitting device , the device comprising:at least one of a first plurality of epitaxial dice, a second plurality of epitaxial dice, and a third plurality of epitaxial dice transferred, respectively, from a first substrate, a second substrate, and a third substrate to a carrier wafer by subjecting a release region to an energy source, separating from each of the first substrate, the second substrate, and the third substrate each of the first epitaxial dice, the second epitaxial dice, and the third epitaxial dice that is being transferred, and selectively bonding to the carrier wafer each of the first epitaxial dice, the second epitaxial dice, and the third epitaxial dice that is being transferred; andwherein the transferred first epitaxial dice, the second epitaxial dice, and the third epitaxial dice on the carrier wafer are processed to form an RGB emitting devices capable of emitting a red wavelength, a green wavelength, and a blue wavelength.39. The method of claim 38 , wherein the integrated multiple wavelength light emitting device is an ...

Grating with plurality of layers

A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

NITRIDE SEMICONDUCTOR QUANTUM CASCADE LASER

A terahertz quantum cascade laser (THz-QCL) element operable at an unexplored frequency is obtained. A crystal of a nitride semiconductor is used to fabricate a repeated set of unit structures into a super lattice. Each unit structure includes a first barrier layer, a first well layer, a second barrier layer, and a second well layer disposed in this order. An energy level structure for electrons under a bias electric field has a mediation level, an upper lasing level, and a lower lasing level. The energy value of the mediation level is close to the energy value of either an upper lasing level or a lower lasing level, each belonging to either the unit structure or the other unit structure adjacent thereto, and is separated from the energy value of the other level by at least the energy value of a longitudinal-optical (LO) phonon exhibited by the crystal. 1. A quantum cascade laser element comprising:a super lattice formed by a crystal of a nitride semiconductor;the super lattice having a plurality of unit structures, each of which includesa first barrier layer;a first well layer stacked on the first barrier layer;a second barrier layer stacked on the first well layer; anda second well layer stacked on the second barrier layer, the barrier layers and the well layers having high and low potentials, respectively, relative to potentials of conduction-band electrons of the crystal, a mediation level that has a significant probability of finding an electron in at least one of the first well layer and the second well layer;', 'an upper lasing level that has a significant probability of finding an electron in the first well layer; and', 'a lower lasing level that has a significant probability of finding an electron in the second well layer,, 'each unit structure including an energy level structure for electrons under a bias electric field in a stacking direction due to external voltage, the energy level structure havingunder the bias electric field, an energy value of the ...

Quantum dot soa-silicon external cavity multi-wavelength laser

A hybrid external cavity multi-wavelength laser using a QD RSOA and a silicon photonics chip is demonstrated. Four lasing modes at 2 nm spacing and less than 3 dB power non-uniformity were observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10 −9 BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.

WAFER SCALE MONOLITHIC INTEGRATION OF LASERS, MODULATORS, AND OTHER OPTICAL COMPONENTS USING ALD OPTICAL COATINGS

After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser. 1. A semiconductor structure comprising:a laser located in a first region of a semiconductor substrate, the laser having a first facet on a first end of the laser through which a laser beam is emitted and a second facet on a second end of the laser opposite the first end;a modulator located in a second region of the semiconductor substrate and optically coupled to the laser;an anti-reflection coating present on exposed surfaces of the modulator including a top surface, two side surfaces, a front surface proximal to the first facet of the laser and a rear surface opposite the front surface; anda high reflection coating present on the second facet of the laser.2. The semiconductor structure of claim 1 , wherein the anti-reflection coating comprises at least one pair of a first coating and a second coating having different refractive indices claim 1 , wherein the first coating contacts the exposed surfaces of the modulator.3. The semiconductor structure of claim 2 , wherein the first coating has a first refractive index claim 2 , and the second coating has a second refractive index claim 2 , wherein the first refractive index is greater than the second refractive index.4. The semiconductor structure of claim 3 , wherein the first ...

MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN MATERIAL

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch. 132.-. (canceled)33. A method for manufacturing an article that includes a laser diode device , the method comprising: providing a gallium and nitrogen containing substrate having a surface region characterized by a polar c-plane or an offcut of a polar c-plane surface;', 'forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material overlying the surface region, an n-type gallium and nitrogen containing region overlying the release material, an active region comprising at least one quantum well layer overlying the n-type gallium and nitrogen containing region, and a p-type gallium and nitrogen containing region overlying the active region; and an interface region overlying the p-type gallium and nitrogen containing region, the at least one quantum well layer being characterized by an internal polarization field;', 'forming a plurality of dice by at least patterning the epitaxial material, each pair of dice being characterized by a first pitch between the pair of dice, each of the dice corresponding to at least one laser diode device;', 'bonding the interface region associated with at least one of the plurality of ...

MANUFACTURABLE MULTI-EMITTER LASER DIODE

A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region. 1. A multi-emitter laser diode device , the laser diode device comprising:a carrier chip singulated from a carrier wafer, the carrier chip being characterized by a length and a width; wherein the width defines a first pitch;a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region; each of the epitaxial mesa dice regions arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions, each of the plurality of epitaxial mesa dice regions comprising epitaxial material; the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region;one or more laser diode stripe regions formed in the plurality of epitaxial mesa dice regions; andeach of the laser diode stripe regions configured with a pair of facets wherein the first facet is configured on a first end of the ...

INTEGRATION OF PHOTONIC, ELECTRONIC, AND SENSOR DEVICES WITH SOI VLSI MICROPROCESSOR TECHNOLOGY

According to an aspect of the present principles, methods are provided for fabricating an integrated structure. A method includes forming a very large scale integration (VLSI) structure including a semiconductor layer at a top of the VLSI structure. The method further includes mounting the VLSI structure to a support structure. The method additionally includes removing at least a portion of the semiconductor layer from the VLSI structure. The method also includes attaching an upper layer to the top of the VLSI structure. The upper layer is primarily composed of a material that has at least one of a higher resistivity or a higher transparency than the semiconductor layer. The upper layer includes at least one hole for at least one of a photonic device or an electronic device. The method further includes releasing said VLSI structure from the support structure. 1. A method for fabricating an optical sensor comprising:forming a very large scale integration (VLSI) structure including a semiconductor layer at a top of the VLSI structure;mounting the VLSI structure to a support structure;removing at least a portion of the semiconductor layer from the VLSI structure;attaching an upper layer to the top of the VLSI structure, wherein said upper layer is primarily composed of a material that has at least one of a higher resistivity or a higher transparency than said semiconductor layer and said upper layer includes at least one microfluidic channel; andreleasing said VLSI structure from the support structure.2. The method of claim 1 , wherein said VLSI structure includes a dielectric layer that has a thickness of less than 200 nm and is disposed beneath said semiconductor layer.3. The method of claim 2 , wherein said method further comprises forming a binding layer on said dielectric layer and wherein said binding layer is within said at least one microfluidic channel due to said attaching.4. The method of claim 3 , wherein said forming the VLSI structure further comprises ...

METHOD FOR FABRICATING SEMICONDUCTOR OPTICAL DEVICE

A method for fabricating a semiconductor optical device includes: preparing a product having a supporting base with a top face and a back face, a semiconductor product mounted on the top face, and an adhesive film with a film containing pressure sensitive material, the adhesive film being between the semiconductor product and the supporting base in the product, and the semiconductor product including a semiconductor laminate and a patterned resist layer on the semiconductor laminate; applying force to the product to produce an intermediate product from the product, the adhesive film bonding the semiconductor product and the top face of the supporting base to each other; disposing the intermediate product on a stage of an etching apparatus; and etching the semiconductor product in the intermediate product with the patterned resist layer in the etching apparatus while the semiconductor product being cooled through the stage. 1. A method for fabricating a semiconductor optical device comprising:preparing a product having a supporting base with a top face and a back face, a semiconductor product mounted on the top face, and an adhesive film including a film containing pressure sensitive material, the adhesive film being between the semiconductor product and the supporting base in the product, and the semiconductor product including a semiconductor laminate and a patterned resist layer on the semiconductor laminate;applying force to the product to produce an intermediate product from the product, the adhesive film bonding the semiconductor product and the top face of the supporting base to each other;disposing the intermediate product on a stage of an etching apparatus; andetching the semiconductor product in the intermediate product with the patterned resist layer in the etching apparatus while the semiconductor product being cooled through the stage.2. The method according to claim 1 , wherein the stage of the etching apparatus is coupled to a cooler claim 1 , and the ...

III-NITRIDE NANOWIRE ARRAY MONOLITHIC PHOTONIC INTEGRATED CIRCUIT ON (001)SILICON OPERATING AT NEAR-INFRARED WAVELENGTHS

Photonic devices such as semiconductor lasers and photodetectors of various operating wavelengths are grown monolithically on a Silicon substrate, and formed of nanowire structures with quantum structures as active regions. A reduction of strain during fabrication results from the use of these nanowire structures, thereby allowing devices to operate for extended periods of time at elevated temperatures. Monolithic photonic devices and monolithic photonic integrated circuits formed on Silicon substrates are thus provided. 1. A semiconductor device comprising:a Silicon (Si) substrate; anda III-Nitride nanowire structure having (i) a quantum region formed of one or more layers of InN quantum disks, (ii) a first graded layer region, and (iii) a second graded layer region, wherein the quantum region is located between the first graded layer region and the second graded layer region, and wherein the III-Nitride nanowire structure is monolithically grown from the Si substrate, and wherein the III-Nitride nanowire structure is responsive at or about 1.3 μm.2. The semiconductor device of claim 1 , wherein quantum region comprises a plurality of InN quantum disk layers each having at least one quantum dot claim 1 , at least one quantum arch-shaped form claim 1 , at least one quantum dot within a quantum disk claim 1 , at least one core-shell quantum structure claim 1 , or a combination of thereof.3. The semiconductor device of claim 2 , wherein each of the plurality of InN quantum disk layers has at least one quantum dot.4. The semiconductor device of claim 3 , wherein each of the plurality of InN quantum disk layers is separated by an InGaN barrier.5. The semiconductor device of claim 1 , wherein the III-nitride nanowire structure is an In-N nanowire structure claim 1 , wherein the first graded region comprises a plurality of n-type InGaN layers claim 1 , and the second graded region comprises a plurality of p-type InGaN layers.6. The semiconductor device of claim 5 , where ...

METHOD OF MANUFACTURING LIGHT EMITTING DEVICE

A method of manufacturing a light emitting device includes providing an element-structure wafer that includes a first substrate and a laser element structure on the first substrate, bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer, removing at least a portion of the first substrate to obtain a thinned bonded wafer, singulating the thinned bonded wafer to obtain a laser element with the second substrate, mounting the laser element with the second substrate on a heat dissipating member such that a laser element structure side of the laser element with the second substrate faces the heat dissipating member, and removing the second substrate from the laser element. 1. A method of manufacturing a light emitting device , the method comprising:providing an element-structure wafer having a first substrate and a laser element structure on the first substrate;bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer;removing at least a portion of the first substrate to obtain a thinned bonded wafer;singulating the thinned bonded wafer to obtain a laser element with the second substrate;mounting the laser element with the second substrate on a heat dissipating member such that a laser element side of the laser element with the second substrate faces the heat dissipating member; andremoving the second substrate from the laser element.2. The method of manufacturing the light emitting device according to claim 1 , whereinthe bonding of the laser element structure side of the element-structure wafer to the second substrate is performed by using a bonding method that allows physical separation, andthe removing of the second substrate from the laser element is performed by physical separation.3. The method of manufacturing the light emitting device according to claim 1 , whereinthe providing of the element-structure wafer includes providing the element- ...

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

Provided is a method of manufacturing a semiconductor substrate. The method includes: forming a crushing layer on the back surface of the semiconductor substrate before forming an element on an epitaxial layer formed on a front surface of the semiconductor substrate; and removing a part of the epitaxial layer. The semiconductor substrate is not exposed to a temperature of 200° C. or higher between the forming of the crushing layer and the removing. 1. A method of manufacturing a semiconductor substrate , comprising:forming a crushing layer on the back surface of the semiconductor substrate before forming an element on an epitaxial layer formed on a front surface of the semiconductor substrate; andremoving a part of the epitaxial layer,wherein the semiconductor substrate is not exposed to a temperature of 200° C. or higher between the forming of the crushing layer and the removing.2. A method of manufacturing a semiconductor substrate according to claim 1 ,wherein the removing includes forming a mesa structure constituting the element by etching the epitaxial layer.3. A method of manufacturing a semiconductor substrate according to claim 2 ,wherein the mesa structure constitutes a vertical cavity surface emitting laser element.4. A method of manufacturing a semiconductor substrate according to claim 1 ,wherein the element is a light emitting element, andthe method further comprises forming a protective film that protects a light emission port of the light emitting element after the removing.5. A method of manufacturing a semiconductor substrate according to claim 4 ,wherein the removing includes forming a mesa structure constituting the element by etching the epitaxial layer, andthe forming of the protective film is performed after the forming of the mesa structure.6. A method of manufacturing a semiconductor substrate according to claim 5 , further comprising forming an insulating film covering a part of the mesa structure claim 5 , in which the protective film is ...

MULTI-WAVELENGTH SEMICONDUCTOR LASERS

Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide. 117.-. (canceled)18. A multi-wavelength semiconductor laser , comprising:a silicon-on-insulator (SOI) substrate;a waveguide ring included in an upper silicon layer of the SOI substrate;a quantum dot (QD) layer above the waveguide ring, the QD layer including an active gain region;a second waveguide included in the upper silicon layer of the SOI substrate, the second waveguide being next to the first waveguide; anda mirror included in the second waveguide.19. The multi-wavelength semiconductor laser of claim 18 , wherein the waveguide ring is a traveling wave cavity.20. The multi-wavelength semiconductor laser of claim 18 , wherein the waveguide ring is at least one of circle shaped claim 18 , oval shaped claim 18 , and racetrack shaped. This invention was made with government support under Contract No. H98230-12-C-0236, awarded by Maryland Procurement Office. The government has certain rights in the invention.Semiconductor lasers based on quantum dot (QD) gain material are attractive candidates for multi-wavelength lasers due to their low relative intensity noise compared to quantum well-based lasers.The following detailed description refers to the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the following description to refer to the same or similar parts. It is to be expressly understood, however, that the drawings are for the purpose of illustration and description only. While several examples ...

EXTERNAL CAVITY LASER

Practical silicon-based light sources are still missing, despite the progress in germanium lasers, because both silicon and germanium are indirect-band semiconductors and inefficient at light generation. A tunable and single mode external cavity laser comprising: a gain medium for generating light between a reflective surface at one end of the gain medium; and a wavelength selective reflector at the other end of a laser cavity. A splitter disposed in the laser cavity includes an input port optically coupled to the gain medium, an input/output port optically coupled to the wavelength selective reflector, and an output port for outputting laser light at selected wavelengths. The wavelength selective reflector reflects light of one or more selected periodic wavelengths back to the gain medium via the input/output port, and passes light of non-selected wavelengths out of the laser cavity. 120-. (canceled)21. An external cavity laser comprising:a gain medium for generating light;a first reflector at one end of the gain medium with greater than 90% reflectivity;a coupler including an input port, an input/output port, and an output port, the input port optically coupled to the gain medium, wherein the coupler is configured to split the light from the gain medium into input laser light directed to the input/output port, and output laser light directed to the output port;a wavelength selective reflector optically coupled to the input/output port forming a laser cavity with the first reflector, and configured for returning the input laser light at a selected wavelength back to the gain medium via the input/output port, and passing non-selected light at non-selected wavelengths, wherein the coupler is also configured for directing the input laser light at the selected wavelength returning from the wavelength selective reflector to the gain medium;a first phase tuner between the coupler and the wavelength selective reflector configured for tuning an optical cavity length of the ...

Protection for the epitaxial structure of metal devices

Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

METHOD OF PROCESSING A SUBSTRATE

The invention relates to a method of processing a substrate, having a first surface with at least one division line formed thereon and a second surface opposite the first surface. The method comprises applying a pulsed laser beam to the substrate from the side of the first surface, at least in a plurality of positions along the at least one division line, so as to form a plurality of hole regions in the substrate, each hole region extending from the first surface towards the second surface. Each hole region is composed of a modified region and a space in the modified region open to the first surface. The method further comprises removing substrate material along the at least one division line where the plurality of hole regions has been formed. 1. A method of processing a substrate , having a first surface with at least one division line formed thereon and a second surface opposite the first surface , the method comprising:applying a pulsed laser beam to the substrate from the side of the first surface, at least in a plurality of positions along the at least one division line, so as to form a plurality of hole regions in the substrate, each hole region extending from the first surface towards the second surface, wherein each hole region is composed of a modified region and a space in the modified region open to the first surface; andremoving substrate material along the at least one division line where the plurality of hole regions has been formed.22a. The method according to claim 1 , wherein the pulsed laser beam is applied to the substrate in a condition where a focal point of the pulsed laser beam is located on the first surface or at a distance from the first surface () in the direction from the first surface towards the second surface.3. The method according to claim 1 , wherein the pulsed laser beam is applied to the substrate in a condition where a focal point of the pulsed laser beam is located on the first surface or at a distance from the first surface in ...

GALLIUM AND NITROGEN CONTAINING LASER DEVICE HAVING CONFINEMENT REGION

A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material. 1. A method for fabricating a laser diode device comprising:providing a gallium and nitrogen containing substrate member comprising a surface region;forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region;performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region overlying the exposed portion and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material;forming an n-type gallium and nitrogen containing material overlying the dielectric material;forming an active region overlying the n-type gallium and nitrogen containing material;forming a p-type gallium and nitrogen containing material;forming a waveguide structure ...

TUNABLE LASER WITH DIRECTIONAL COUPLER

A tunable laser has a first mirror, a second mirror, a gain medium, and a directional coupler. The first mirror and the second mirror form an optical resonator. The gain medium and the directional coupler are, at least partially, in an optical path of the optical resonator. The first mirror and the second mirror comprise binary super gratings. Both the first mirror and the second mirror have high reflectivity. The directional coupler provides an output coupler for the tunable laser. 1. (canceled)2. A device for a laser comprising:a first mirror having a first plurality of reflectance peaks;a second mirror having a second plurality of reflectance peaks, wherein the first mirror and the second mirror are configured to form a resonator;a gain medium within the resonator; anda coupler between the first mirror and the second mirror, the coupler configured to guide a selected percentage of light directly, not evanescently, out of the resonator through a port of the coupler, such that the selected percentage of light coupled out of the resonator is independent of spectral properties of the first mirror and the second mirror, and wherein the coupler is a waveguide coupler.3. The device of claim 2 , wherein:wherein a maximum reflectance of the first plurality of reflectance peaks is greater than 90%; andwherein a maximum reflectance of the second plurality of reflectance peaks is greater than 90%.4. The device of claim 2 , wherein:the coupler comprises a ridge portion having a width at a waist of the coupler, wherein the waist is at a center of the coupler; andthe selected percentage of light guided out of the resonator through the port of the coupler is based on the width of the ridge portion at the waist of the coupler.5. The device of claim 2 , wherein:the coupler comprises a first ridge and a second ridge;a gap separates the first ridge from the second ridge; andthe gap is equal to or greater than 0.75 microns.6. The device of claim 2 , wherein the first mirror claim 2 , ...

Light emitter and projector

A light emitter includes a substrate, a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer, and a third semiconductor layer provided between the substrate and the first semiconductor layer and having the second conductivity type, in which the first semiconductor layer is provided between the third semiconductor layer and the light emitting layer, and the third semiconductor layer has a protruding/recessed structure.

Techniques for vertical cavity surface emitting laser oxidation

Some embodiments relate to a method for manufacturing a vertical cavity surface emitting laser. The method includes forming an optically active layer over a first reflective layer and forming a second reflective layer over the optically active layer. Forming a masking layer over the second reflective layer, where the masking layer leaves a sacrificial portion of the second reflective layer exposed. A first etch is performed to remove the sacrificial portion of the second reflective layer, defining a second reflector. Forming a first spacer covering outer sidewalls of the second reflector and masking layer. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer while leaving a central region of the optically active layer un-oxidized. A second etch is performed to remove a portion of the oxidized peripheral region, defining an optically active region. Forming a second spacer covering outer sidewalls of the first spacer, the optically active region, and the first reflector.

Photonic circuit with hybrid iii-v on silicon active section with inverted silicon taper

A photonic circuit with a hybrid III-V on silicon or silicon-germanium active section, that comprises an amplifying medium with a III-V heterostructure ( 1 , QW, 2 ) and an optical wave guide. The wave guide comprises a coupling section ( 31 ) facing a central portion of the amplifying medium, a propagation section ( 34, 35 ) and a modal transition section ( 32, 33 ) arranged between the coupling section and the propagation section. In the modal transition section, the optical wave guide widens progressively from the propagation section towards the coupling section.

METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT

In a method for manufacturing a light-emitting element, a second irradiation process includes forming a first modified region at a first distance from a second surface in a thickness direction of a sapphire substrate, forming a second modified region at a second distance from the second surface in the thickness direction, the second distance being less than the first distance, the second modified region being shifted in a first direction from the first modified region, and forming a third modified region at a third distance from the second surface in the thickness direction, the third distance being less than the second distance, the third modified region overlapping the first modified region in a top-view. In the thickness direction of the sapphire substrate, a greater number of modified regions that include second modified portions are formed than modified regions that include first modified portions. 1. A method for manufacturing a light-emitting element , the method comprising:{'claim-text': ['a sapphire substrate having a first surface and a second surface opposite the first surface, and', 'an element part that comprises a semiconductor layer located at the first surface;'], '#text': 'providing a wafer comprising:'}{'claim-text': ['a first irradiation process of scanning the laser beam along a first direction parallel to an a-axis direction of the sapphire substrate to form a plurality of first modified portions along the first direction in the interior of the sapphire substrate, the formation of the plurality of first modified portions being performed multiple times to form a plurality of modified regions at a first spacing at different distances from the second surface, each of the plurality of modified regions formed at the first spacing comprising the plurality of first modified portions along the first direction, and', 'a second irradiation process of scanning the laser beam along a second direction parallel to an m-axis direction of the sapphire substrate ...

LASER DIODE

A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact. 114.-. (canceled)15. A laser diode having a layer arrangement with layers arranged on one another , the layer arrangement comprising a first , a second and a third layer structure with at least one active zone and two waveguide layers , the active zone being arranged between the two waveguide layers , and havinga first layer structure, the first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, anda second and a third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure,wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, andthe active zone is arranged between a p contact and an n contact, an intermediate layer being arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the ...