07-01-2021 дата публикации
Номер: US20210005449A1
Принадлежит:
The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: 1. A method of providing a structure by depositing a layer on a substrate in a reactor , the method comprising: [{'sub': 2n+2−y−z', 'in', 'y', 'z, '(1) HSXA, wherein the formula (1) compound is a cyclic compound, n=3-10, y=1 or more and up to 2n−z, z=0 or more and up to 2n−y, X is I or Br, and A is a halogen other than X;'}, {'sub': 2n+2−y−z−w', 'n', 'y', 'z', 'w, '(2) HSiXAR, wherein, n=1-10, y=1 or more and up to 2n+2−z−w, z=0 or more and up to 2n+2−y−w, w=0 or more and up to 2n+2−y−z, X is I or Br, A is a halogen other than X, and R is an organic ligand; or'}, {'sub': 2n+2−y−z−w', 'n', 'y', 'z', 'w, 'sup': II', 'II, '(3) HSiXAR, wherein, n=1-10, y=0 or more and up to 2n+2−z−w, z=0 or more and up to 2n+2−y−w, w=1 or more and up to 2n+2−y−z, X is I or Br, A is a halogen other than X, and Ris an organic ligand containing I or Br;'}], 'introducing a silicon halide precursor, wherein the silicon halide precursor has a general formulaand wherein the silicon halide comprises at least one hydrogen;introducing a reactant gas comprising one or more of oxygen, helium, and argon in the reactor;providing an energy source to create a plasma from the reactant gas to form reactive species; andusing the reactive species, forming a layer comprising silicon dioxide.2. The method according to claim 1 , wherein the reactant gas comprises less than 5000 ppm nitrogen.3. The method according to claim 1 , wherein the method comprises a PECVD process.4. The method according to claim 1 , wherein the reactant gas comprises argon.5. The method according to claim 1 , wherein a temperature within a reaction chamber of the reactor is between 25° C. and 700° C.6. The method according to claim 1 , wherein the plasma is remotely generated.7. The method according to claim 1 , wherein at least one of the silicon halide precursor and the reactant gas is pulsed to the ...
Подробнее
