Photoresist removal method and patterning process utilizing the same
22-07-2014 дата публикации
Номер:
US8785115B2
Принадлежит: WU HUNG-YI, PAI YUAN-CHI, CHENG YU-WEI, WANG CHANG-MAO, UNITED MICROELECTRONICS CORP, UNITED MICROELECTRONICS CORP.
Контакты:
Номер заявки: 37-13-20120226
Дата заявки: 09-02-2012
A photoresist removal method is described. A substrate having thereon a positive photoresist layer to be removed is provided. The positive photoresist layer is UV-exposed without using a photomask. A development liquid is used to remove the UV-exposed positive photoresist layer. The substrate as provided may further have thereon a sacrificial masking layer under the positive photoresist layer. The sacrificial masking layer is removed after the UV-exposed positive photoresist layer is removed.