Photoresist removal method and patterning process utilizing the same

22-07-2014 дата публикации

Номер:

US8785115B2

Автор: WU HUNG-YI, PAI YUAN-CHI, CHENG YU-WEI, WANG CHANG-MAO

Принадлежит: WU HUNG-YI, PAI YUAN-CHI, CHENG YU-WEI, WANG CHANG-MAO, UNITED MICROELECTRONICS CORP, UNITED MICROELECTRONICS CORP.

Контакты:

Номер заявки: 37-13-20120226

Дата заявки: 09-02-2012

A photoresist removal method is described. A substrate having thereon a positive photoresist layer to be removed is provided. The positive photoresist layer is UV-exposed without using a photomask. A development liquid is used to remove the UV-exposed positive photoresist layer. The substrate as provided may further have thereon a sacrificial masking layer under the positive photoresist layer. The sacrificial masking layer is removed after the UV-exposed positive photoresist layer is removed.

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/3 H01L21/31 H01L21/311 H01L21/3113 H01L21/31133 H01L21/32 H01L21/321 H01L21/3213 H01L21/32139 H01L21/8 H01L21/82 H01L21/823 H01L21/8238 H01L21/82384 H01L21/823842 H01L21/82386 H01L21/823864 H1 H10 H10D H10D8 H10D84 H10D84/H10D84/0 H10D84/01 H10D84/017 H10D84/0177 H10D84/018 H10D84/0184 H10D84/03 H10D84/038

IPC - классификация

G G0 G03 G03F G03F7 G03F7/G03F7/4 G03F7/42

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