Plasma enhanced chemical vapor deposited (PECVD) silicon nitride barrier layer for high density plasma chemical vapor deposited (HDP-CVD) dielectric layer

03-10-2000 дата публикации

Номер:

US6127238A

Автор: Jia Zhen Zheng, Kho Liep Chok, Marvin De-Dui Liao, Wei Lu, Yih-Shung Lin

Принадлежит: Chartered Semiconductor Manufacturing Pte Ltd

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/021 H01L21/0216 H01L21/02164 H01L21/0217 H01L21/022 H01L21/0221 H01L21/02211 H01L21/0227 H01L21/02274 H01L21/3 H01L21/31 H01L21/318 H01L21/3185 H01L21/7 H01L21/76 H01L21/768 H01L21/7680 H01L21/76801 H01L21/7683 H01L21/76834 H01L21/76837

IPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/021 H01L21/0216 H01L21/02164 H01L21/0217 H01L21/022 H01L21/0227 H01L21/02274

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