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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 23710. Отображено 100.
05-01-2012 дата публикации

Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material

Номер: US20120003819A1
Автор: Alexander Reznicek, Devendra K. Sadana, He Hong, Paul David Brabant, Robert Torres, Jr., Satoshi Hasaka, Terry Arthur Francis, Thomas N. Adam
Принадлежит: International Business Machines Corp, Matheson Tri-Gas Inc

The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

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Номер записи: 1
12-01-2012 дата публикации

Hybrid Silicon Wafer and Method of Producing the Same

Номер: US20120009374A1
Автор: Hiroshi Takamura, Ryo Suzuki
Принадлежит: Nippon Mining and Metals Co Ltd

Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.

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Номер записи: 2
02-02-2012 дата публикации

Mold shape to optimize thickness uniformity of silicon film

Номер: US20120027996A1
Автор: Balram Suman, Glen Bennett Cook, Prantik Mazumder
Принадлежит: Corning Inc

A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold.

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Номер записи: 3
02-02-2012 дата публикации

Method for determining cop generation factors for single-crystal silicon wafer

Номер: US20120029834A1
Автор: Shuichi Inami
Принадлежит: Sumco Corp

A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP density RADIUSMAX , a minimum value of the COP density is set as COP density RADIUSMIN , a value computed by “(COP density RADIUSMAX −COP density RADIUSMIN )/COP density RADIUSMAX ” is compared to a predetermined set value, and a non-crystal-induced COP and a crystal-induced COP are distinguished from each other based on a clear criterion, thereby determining the COP generation factor. Therefore, a rejected wafer in which a determination of the crystal-induced COP is made despite being the non-crystal-induced COP can be relieved, so that a wafer production yield can be enhanced.

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Номер записи: 4
09-02-2012 дата публикации

Diamond semiconductor element and process for producing the same

Номер: US20120034737A1
Автор: Kenji Ueda, Makoto Kasu, Toshiki Makimoto, Yoshiharu Yamauchi
Принадлежит: Nippon Telegraph and Telephone Corp

A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C.

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Номер записи: 5
16-02-2012 дата публикации

Crucible for silicon suitable for producing semiconductors

Номер: US20120037065A1
Автор: Florian Arzberger, Rolf Wagner
Принадлежит: HC Starck GmbH

A crucible for producing a silicon suitable for producing a semiconductor includes a plurality of components and at least one unclosed joint gap.

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Номер записи: 6
29-03-2012 дата публикации

Technique to modify the microstructure of semiconducting materials

Номер: US20120074528A1
Автор: Glen Bennett Cook, Lili Tian, Mallanagouda Dyamanagouda Patil, Natesan Venkataraman, Prantik Mazumder
Принадлежит: Corning Inc

A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each of the first layers to form a particle-coated semiconductor sheet, placing the particle-coated sheet between end members, heating the particle-coated sheet to a temperature effective to at least partially sinter the first layer and at least partially melt the semiconducting material, and cooling the particle-coated sheet to solidify the semiconducting material and form a treated sheet of semiconducting material.

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Номер записи: 7
03-05-2012 дата публикации

Method and apparatus for treating diamond using liquid metal saturated with carbon

Номер: US20120107212A1
Автор: A. Marshall Stoneham, Philip H. Taylor
Принадлежит: Designed Materials Ltd

A method of treating a diamond, the method comprising: (i) providing a liquid metal saturated with carbon with respect to graphite precipitation; (ii) lowering the temperature of the liquid metal such that the liquid metal is saturated with carbon with respect to diamond precipitation; (iii) immersing a diamond in the liquid metal; and (iv) removing the diamond from the metal.

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Номер записи: 8
31-05-2012 дата публикации

Vitreous silica crucible

Номер: US20120132133A1
Автор: Eriko Suzuki, Hiroshi Kishi, Toshiaki Sudo
Принадлежит: Japan Super Quartz Corp

The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm −1 and 606 cm −1 , respectively, in Raman spectrum of vitreous silica of the region having a thickness of 2 mm from an outer surface to an inner surface of a wall of the crucible.

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Номер записи: 9
07-06-2012 дата публикации

Vitreous silica crucible

Номер: US20120137964A1
Автор: Hiroshi Kishi, Ken Kitahara, Toshiaki Sudo
Принадлежит: Japan Super Quartz Corp

The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible and the generation of cracks. According to the present invention, a vitreous silica crucible is provided for pulling a silicon single crystal having a wall, the wall including a non-doped inner surface layer made of natural vitreous silica or synthetic vitreous silica, a mineralizing element-maldistributed vitreous silica layer containing dispersed island regions each containing a mineralizing element, and wherein the vitreous silica of the island regions and the vitreous silica of a surrounding region of the island regions is a combination of mineralizing element-doped natural vitreous silica and non-doped synthetic vitreous silica, or a combination of mineralizing element-doped synthetic vitreous silica and non-doped natural vitreous silica, and the inner surface layer is made of vitreous silica of a different kind from that of the island region.

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Номер записи: 10
14-06-2012 дата публикации

Nanowire preparation methods, compositions, and articles

Номер: US20120148861A1
Автор: David R. Whitcomb, Doreen C. Lynch, William D. Ramsden
Принадлежит: Individual

Nanomaterial preparation methods, compositions, and articles are disclosed and claimed. Such methods can provide nanomaterials with improved morphologies relative to previous methods. Such materials are useful in electronic applications.

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Номер записи: 11
28-06-2012 дата публикации

Photoreduction processing method of three-dimensional metal nanostructure

Номер: US20120160058A1
Автор: Nobuyuki Takeyasu, Satoshi Kawata, Takuo Tanaka
Принадлежит: RIKEN Institute of Physical and Chemical Research

In a method of producing a metal structure by photoreducing metal ion, a substance capable of suppressing growth of metal crystal is added to a medium in which metal ion is dispersed to prevent growth of the metal crystal produced by photoreduction of the metal ion, thereby processing resolution of a metal structure formed of the metal crystal is improved.

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Номер записи: 12
05-07-2012 дата публикации

Method of manufacturing vitreous silica crucible

Номер: US20120167627A1
Автор: Eriko Suzuki, Toshiaki Sudo
Принадлежит: Japan Super Quartz Corp

There is provided a method of manufacturing a vitreous silica crucible having a suitably controlled inner surface property. The present invention provides a method of manufacturing a vitreous silica crucible by heating and fusing a silica powder layer in a rotating mold by arc discharge generated by carbon electrodes including: a preparation process for determining optimal fusing temperatures during heating and fusing the silica powder layer at plural points of different heights of the silica powder layer; a temperature measuring process for measuring actual temperatures during heating and fusing the silica powder layer at the plural points; a temperature controlling process for controlling the actual temperatures at the plural points so that the actual temperatures matches the optimal fusing temperatures at the respective points.

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Номер записи: 13
05-07-2012 дата публикации

Method and device for producing silicon blocks

Номер: US20120167817A1
Автор: Bernhard Freudenberg, Doreen NAUERT, Marc Dietrich, Mark Hollatz, Markus Apel, Melanie Hentsche
Принадлежит: SOLARWORLD INNOVATIONS GMBH

A method for producing silicon blocks comprises providing a crucible for receiving a silicon melt, with a base and a plurality of side walls connected to the base, attaching nuclei at least on an inner side of the base of the crucible, the nuclei having a melt temperature, which is greater than the melt temperature of silicon, filling the crucible with the silicon melt, solidifying the silicon melt beginning on the nuclei and removing the solidified silicon from the crucible.

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Номер записи: 14
19-07-2012 дата публикации

Methods for epitaxial silicon growth

Номер: US20120180716A1
Автор: Er-Xuan Ping, Jingyan Zhang
Принадлежит: Micron Technology Inc

Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.

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Номер записи: 15
26-07-2012 дата публикации

Hybrid Silicon Wafer

Номер: US20120187409A1
Автор: Hiroshi Takamura, Ryo Suzuki
Принадлежит: JX Nippon Mining and Metals Corp

A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120° to 150° relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer.

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Номер записи: 16
02-08-2012 дата публикации

Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device

Номер: US20120196395A1
Автор: Goh Matsunobu, Katsuya Shirai, Koichi Tatsuki, Koichi Tsukihara, Nobuhiko Umezu, Shin Hotta, Yoshio Inagaki
Принадлежит: Sony Corp

A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.

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Номер записи: 17
23-08-2012 дата публикации

Low-temperature selective epitaxial growth of silicon for device integration

Номер: US20120210932A1
Автор: Alexander Reznicek, Ali Khakifirooz, Bahman Hekmatshoar-Tabari, Davood Shahrjerdi, Devendra K. Sadana, Ghavam G. Shahidi
Принадлежит: International Business Machines Corp

An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

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Номер записи: 18
30-08-2012 дата публикации

Device and method for forming low-temperature polysilicon film

Номер: US20120220140A1
Автор: Koichi Kajiyama, Kuniyuki Hamano, Michinobu Mizumura
Принадлежит: Individual

Provided is a forming device and method making it possible to obtain a low-temperature polysilicon film in which the size of crystal grains fluctuates minimally, and is uniform. A mask has laser-light-blocking areas and laser-light-transmission areas arranged in the form of a grid such that the light-blocking areas and transmission areas are not adjacent to one another. Laser light is directed by the microlenses through the masks to planned channel-area-formation areas. The laser light transmitted by the transmission areas is directed onto an a-Si:H film, annealing and polycrystallzing the irradiated parts thereof. The mask is then removed, and when the entire planned channel-area-formation area is irradiated with laser light, the already-polycrystallized area, having a higher melting point, does not melt, while the area in an amorphous state melts and solidifies, leading to polycrystallization. The grain size of the polysilicon film obtained is regulated by the light-blocking areas and transmission areas and is thus controlled to a predetermined range.

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Номер записи: 19
27-09-2012 дата публикации

Apparatus and method for extracting a silicon ingot

Номер: US20120240635A1
Автор: Dong Hyun Nam, Ki Hyun Chang
Принадлежит: Kumgang Korea Chemical Co Ltd

Provided are an apparatus and method of extracting a silicon ingot. The apparatus for extracting a silicon ingot includes a chamber in which a silicon source material introduced into a cold crucible is melted, a primary extraction apparatus vertically movably installed in the chamber and configured to solidify the molten silicon to extract the silicon ingot, a movable apparatus configured to horizontally move the primary extraction apparatus, and a secondary extraction apparatus vertically movably installed under the chamber and configured to extract the silicon ingot in a state in which the primary extraction apparatus is moved to one side. Therefore, as the height of the extraction apparatus is reduced, manufacturing cost of equipment can be reduced and installation space of the extraction apparatus can also be reduced.

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Номер записи: 20
27-09-2012 дата публикации

Device for holding silicon melt

Номер: US20120242016A1
Автор: Arve Solheim, Bernhard Freudenberg, Egbert Van De Schootbrugge, Havard Sorheim, Josef Stenzenberger, Michael Timm
Принадлежит: Saint Gobain IndustrieKeramik Roedental GmbH, SOLARWORLD INNOVATIONS GMBH

Device for holding a silicon melt comprising a crucible, which partly surrounds an inner chamber for holding the melt, with a base and at least one side wall made of a base material, whereby the crucible comprises at least one equalizing means for equalizing mechanical thermal stresses.

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Номер записи: 21
04-10-2012 дата публикации

Systems For Insulating Directional Solidification Furnaces

Номер: US20120248286A1
Автор: Benjamin Michael Meyer, Lee William FERRY, Rituraj NANDAN
Принадлежит: SunEdison Products Singapore Pte Ltd

Systems and methods are disclosed for inhibiting heat transfer through lateral sidewalls of a support member positioned beneath a crucible in a directional solidification furnace. The systems and methods include the use of insulation positioned adjacent the lateral sidewalls of the support member. The insulation inhibits heat transfer through the lateral sidewalls of the support member to ensure the one-dimensional transfer of heat from the melt through the support member.

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Номер записи: 22
04-10-2012 дата публикации

Coating compositions

Номер: US20120252950A1
Автор: Aditya J. Deshpande, GANG Shi, Richard J. Phillips, Steven L. Kimbel
Принадлежит: SunEdison Products Singapore Pte Ltd

Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.

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Номер записи: 23
18-10-2012 дата публикации

Polysilicon system

Номер: US20120260845A1
Автор: David P. Williams, Nancy Kanoff
Принадлежит: REC SILICON INC

A polysilicon system comprises polysilicon in at least three form-factors, or shapes, providing for an enhanced loading efficiency of a mold or crucible. The system is used in processes to manufacture multi-crystalline or single crystal silicon.

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Номер записи: 24
01-11-2012 дата публикации

Method for purifying metallurgical silicon for solar cells

Номер: US20120275985A1
Автор: Cheng C. Kao, Masahiro Hoshino
Принадлежит: Individual

A method includes transferring a raw silicon material in a crucible and subjecting the raw silicon material in the crucible to thermal energy to form a melted silicon material at a temperature of less than 1400 Degrees Celsius, the melted silicon material having an exposed region bounded by an interior region of the crucible, subjecting an exposed inner region of the melted silicon material to an energy source to include an arc heater configured above the exposed region and to be spaced by a gap between the exposed region and a muzzle region of the arc heater to form a determined temperature profile within a vicinity of an inner region of the exposed melted silicon material while maintaining outer regions of the melted silicon material at a temperature below a melting point of the crucible, and removing impurities from the melted silicon material to form higher purity silicon.

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Номер записи: 25
22-11-2012 дата публикации

Nanowire preparation methods, compositions, and articles

Номер: US20120294755A1
Автор: David R. Whitcomb, Junping Zhang
Принадлежит: Carestream Health Inc

Preparation methods, compositions, and articles useful for electronic and optical applications are disclosed. Such methods reduce metal ions to metal nanowires in the presence of bromide ions, IUPAC Group 14 elements in their +2 oxidation state, and optionally chloride ions. The product nanowires are useful in electronics applications.

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Номер записи: 26
06-12-2012 дата публикации

Device for obtaining a multicrystalline semiconductor material, in particular silicon, and method for controlling the temperature therein

Номер: US20120304697A1
Автор: Dario Ciscato, Fabrizio Crivello, Fabrizio Dughiero, Mariolino Cesano, Michele Forzan, Roberto Bechini
Принадлежит: SAET SpA

A device for obtaining multicrystalline silicon, including: at least one crucible made of quartz for the silicon, removably housed in a cup-shaped graphite container; a fluid-tight openable casing; a top induction coil, set facing, with interposition of a graphite plate, the crucible, a lateral induction coil, set around a side wall of the graphite container, and a bottom induction coil, set facing a bottom wall of the graphite container and vertically mobile for varying the distance from the bottom wall; and first means for a.c. electrical supply of the induction coils separately from one another, and second means for supply of a coolant within respective hollow turns of the induction coils; the bottom induction coil includes four spiral windings, arranged alongside one another; electrical switching means enable in use selective connection of the four windings to one another according to different configurations.

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Номер записи: 27
13-12-2012 дата публикации

Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm

Номер: US20120315428A1
Автор: Alfred Miller, Andreas Sattler, Georg Raming, Walter Heuwieser
Принадлежит: SILTRONIC AG

Silicon semiconductor wafers are produced by: pulling a single crystal with a conical section and an adjoining cylindrical section having a diameter ≧450 mm and a length of ≧800 mm from a melt in a crucible, wherein in pulling the transition from the conical section to the cylindrical section, the pulling rate is at least 1.8 times higher than the average pulling rate during the pulling of the cylindrical section; cooling the growing single crystal with a cooling power of at least 20 kW; feeding heat from the side wall of the crucible to the single crystal, wherein a gap having a height of ≧70 mm is present between a heat shield surrounding the single crystal and the melt surface.

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Номер записи: 28
17-01-2013 дата публикации

Layered crucible for casting silicon ingot and method of producing same

Номер: US20130015318A1
Автор: Hiroshi Ikeda, Koji Tsuzukihashi, Masahiro Kanai, Saburo Wakita
Принадлежит: Mitsubishi Materials Corp, Mitsubishi Materials Electronic Chemicals Co Ltd

Provided are a layered crucible for casting a silicon ingot that can suppress dissolution of oxygen into the silicon ingot and a method of producing the same crucible. The layered crucible for casting a silicon ingot is used in the production of a silicon ingot by melting and casting a silicon raw material. The layered crucible comprising: a silica layer provided on the inner side of a mold; and a barium coating layer provided on the surface of the silica layer.

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Номер записи: 29
24-01-2013 дата публикации

Use of freestanding nitride veneers in semiconductor devices

Номер: US20130019927A1
Автор: Richard L. Ross, Scott M. Zimmerman, William R. Livesay
Принадлежит: Individual

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

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Номер записи: 30
21-03-2013 дата публикации

Microwave plasma reactors

Номер: US20130069531A1
Автор: David King, Donnie K. Reinhard, Jes Asmussen, Jing Lu, Kadek W. Hemawan, M. Kagan Yaran, Michael Becker, Thomas Schuelke, Timothy Grotjohn, Yajun Gu
Принадлежит: Fraunhofer USA Inc, Michigan State University MSU

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

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Номер записи: 31
28-03-2013 дата публикации

Method and Apparatus For Depositing A Layer On A Semiconductor Wafer by Vapor Deposition In A Process Chamber

Номер: US20130078743A1
Автор: Georg Brenninger
Принадлежит: SILTRONIC AG

A layer is deposited onto a semiconductor wafer by CVD in a process chamber having upper and lower covers, wherein the wafer front side temperature is measured; the wafer is heated to deposition temperature; the temperature of the upper process chamber cover is controlled to a target temperature by measuring the temperature of the center of the outer surface of the upper cover as the value of a controlled variable of an upper cover temperature control loop; a gas flow rate of process gas for depositing the layer is set; and a layer is deposited on the heated wafer front side during control of the upper cover temperature to the target temperature. A process chamber suitable therefor has a sensor for measuring the upper cover outer surface center temperature and a controller for controlling this temperature to a predetermined value.

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Номер записи: 32
11-04-2013 дата публикации

Method for forming nanocrystalline silicon film

Номер: US20130089972A1
Автор: Min Koo Han, Sun Jae Kim
Принадлежит: SNU R&DB FOUNDATION

Provided is a method for forming a nanocrystalline silicon film that can be deposited on a substrate while maintaining a high degree of crystallinity at low temperatures. The method includes performing plasma treatment on a substrate, and forming a nanocrystalline silicon film by depositing the nanocrystalline silicon film on the substrate.

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Номер записи: 33
18-04-2013 дата публикации

Crystalline silicon ingot and method of fabricating the same

Номер: US20130095027A1
Автор: Cheng-Jui Yang, Ching-Shan Lin, Chung-Wen Lan, Ming-Kung HSIAO, Pei-Kai HUANG, sheng-hua Ni, Sung-Lin Hsu, Wen-Ching Hsu, Wen-Huai Yu, Yu-Min YANG
Принадлежит: Sino American Silicon Products Inc

A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.

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Номер записи: 34
18-04-2013 дата публикации

GRAPHENE PATTERN AND PROCESS OF PREPARING THE SAME

Номер: US20130095305A1
Автор: CHOI Jae-Young, SHIN Hyeon-jin, YOON Seon-mi
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant. 1. A graphene pattern comprising: 1-300 layers of graphene , which is a polycyclic aromatic molecule in which a plurality of carbon atoms are covalently bound to each other , andwherein the graphene is disposed on at least one surface of a substrate.2. The graphene pattern of claim 1 , having a single crystalline structure claim 1 , wherein a D band/G band peak ratio is equal to or less than 0.2 claim 1 , when measured in a Raman spectrum of the graphene.3. The graphene pattern of claim 1 , having 1-60 layers of graphene.4. The graphene pattern of claim 1 , further comprising a graphitizing catalyst interposed between the substrate and the graphene.5. The graphene pattern of claim 4 , wherein the graphitizing catalyst is at least one selected from the group consisting of Ni claim 4 , Co claim 4 , Fe claim 4 , Pt claim 4 , Au claim 4 , Al claim 4 , Cr claim 4 , Cu claim 4 , Mg claim 4 , Mn claim 4 , Mo claim 4 , Rh claim 4 , Si claim 4 , Ta claim 4 , Ti claim 4 , W claim 4 , U claim 4 , V and Zr.6. A process of preparing a graphene pattern claim 4 , the process comprising:preparing a substrate on at least one surface of which a graphitizing catalyst pattern is formed;contacting a carbonaceous material with the substrate on which the graphene pattern is formed; andforming graphene on the graphitizing catalyst pattern through heat-treatment in an inert or reductive atmosphere,wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material, andwherein the carbon-containing polymer comprises at least one polymerizable functional group capable of forming a ...

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Номер записи: 35
18-04-2013 дата публикации

Method for producing silicon waveguides on non-soi substrate

Номер: US20130095659A1
Автор: Ching-Fuh Lin, Shih-Che Hung, Shu-Jia Syu
Принадлежит: National Taiwan University NTU

The present invention relates to a method for producing silicon waveguides on non-SOI substrate (non-silicon-on-insulator substrate), and particularly relates to a method for producing silicon waveguides on silicon substrate with a laser. This method includes the following steps: (1) forming a ridge structure with high aspect ratio on a non-SOI substrate; (2) melting and reshaping the ridge structure by laser illumination for forming a structure having broad upper part and narrow lower part; and (3) oxidizing the structure having broad upper part and narrow lower part to form a silicon waveguide.

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Номер записи: 36
25-04-2013 дата публикации

POLYCRYSTALLINE SILICON THIN-FILM FORMING METHOD, POLYCRYSTALLINE SILICON THIN-FILM SUBSTRATE, SILICON THIN-FILM SOLAR CELL, AND SILICON THIN-FILM TRANSISTOR DEVICE

Номер: US20130098444A1
Автор: KAWASHIMA Takahiro
Принадлежит: Panasonic Corporation

A polycrystalline silicon thin-film forming method includes: preparing a substrate; forming a precursor of a first silicon thin film including a first polycrystalline silicon phase and a non-crystalline silicon phase; exposing the first polycrystalline silicon phase; and growing, above the first silicon thin film which the first polycrystalline silicon phase is exposed, a second polycrystalline silicon phase using the first polycrystalline silicon phase as a seed crystal by a plasma chemical vapor deposition method, wherein the first polycrystalline silicon phase is formed continuously in any direction perpendicular to a thickness direction of the first silicon thin film. 1. A polycrystalline silicon thin-film forming method , the method comprising:preparing a substrate;forming, above the substrate, a precursor of a first silicon thin film including a first polycrystalline silicon phase and a non-crystalline silicon phase;exposing the first polycrystalline silicon phase by etching the precursor of the first silicon thin film by a predetermined chemical etching process in which the non-crystalline silicon phase is etched preferentially over the first polycrystalline silicon phase; andgrowing, above the first silicon thin film which the first polycrystalline silicon phase is exposed, a second polycrystalline silicon phase using the first polycrystalline silicon phase as a seed crystal by a plasma chemical vapor deposition method,wherein the first polycrystalline silicon phase is formed continuously in a direction perpendicular to a thickness direction of the first silicon thin film.2. The polycrystalline silicon thin-film forming method according to claim 1 ,wherein the predetermined chemical etching process is a dry etching process in which the first silicon thin film is irradiated with hydrogen plasma.3. The polycrystalline silicon thin-film forming method according to claim 1 ,wherein the forming of the precursor of the first silicon thin film includes:forming a ...

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Номер записи: 37
25-04-2013 дата публикации

MODIFICATION OF SILICON LAYERS FORMED FROM SILANE-CONTAINING FORMULATIONS

Номер: US20130099236A1
Автор: Fahrner Wolfgang, Stuetzel Bernhard
Принадлежит: EVONIK DEGUSSA GmbH

The invention relates to a process for producing an oxygen-containing surface or interface of a silicon layer, which is arranged on a substrate, especially in the production of photovoltaic units. 1. A process for preparing a silicon layer on a substrate , the silicon layer comprising silicon and a surface suboxide structure , the process comprising:applying a formulation comprising at least one silicon compound to the substrate to obtain a coated substrate,irradiating, thermally treating, or irradiating and thermally treating the coated substrate to form a silicon layer,{'sub': '3', 'treating the silicon layer with at least one oxygen source selected from the group consisting of elemental oxygen, O, carbon dioxide, and an oxygen compound wherein the oxygen source is in pure form or a liquid or gaseous mixture, and'}irradiating, thermally treating, or irradiating and thermally treating the oxygen treated coated substrateto form the silicon layer comprising suboxide structures on a surface of the layer.2. The process of claim 1 , wherein the treatment of the silicon layer with oxygen is effected by either:{'sub': '3', 'i) contacting the layer with at least one selected from the group consisting of gaseous elemental oxygen, O, carbon dioxide, an oxygen compound converted to a gaseous form, and a any gas mixture thereof, or'}{'sub': '3', 'ii) applying to the layer a liquid formulation comprising at least one selected from the group consisting of dissolved elemental oxygen, O, dissolved carbon dioxide, an oxygen compound, and any mixture thereof.'}3. The process of claim 1 , further comprising the applying claim 1 , the irradiating or thermally treating claim 1 , the treating with oxygen claim 1 , and further irradiating or thermally treating to form a second or more silicon layer comprising suboxide structures on the surface of the layer.4. The process of claim 1 , wherein the oxygen source is at least one selected from the group consisting of HO claim 1 , an alcohol ...

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Номер записи: 38
02-05-2013 дата публикации

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20130105859A1
Автор: Li Chunlong, Wang Guilei, Zhao Chao
Принадлежит:

The present invention discloses a semiconductor device, comprising: a substrate, an insulating isolation layer formed on the substrate, a first active region layer and a second active region layer formed in the insulating isolation layer, characterized in that the carrier mobility of the first active region layer and/or second active region layer is higher than that of the substrate. In accordance with the semiconductor device and the manufacturing method thereof in the present invention, an active region formed of a material different from that of the substrate is used, the carrier mobility in the channel region is enhanced, thereby the device response speed is substantially improved and the device performance is enhanced greatly. Furthermore, unlike the existing STI manufacturing process, for the present invention, an STI is formed first, and then filling is performed to form an active region, thus avoiding the problem of generation of holes in STI, and improving the device reliability. 1. A semiconductor device , comprising: a substrate , an insulating isolation layer formed on the substrate , a first active region layer and a second active region layer formed in the insulating isolation layer , characterized in that the carrier mobility of the first active region layer and/or second active region layer is higher than that of the substrate.2. The semiconductor device according to claim 1 , wherein the hole mobility of the first active region layer is higher than that of the substrate claim 1 , and the electron mobility of the second active region layer is higher than that of the substrate.3. The semiconductor device according to claim 2 , wherein the substrate is formed of silicon claim 2 , the first active region layer is formed of Ge claim 2 , and the second active region layer is formed of InSb.4. The semiconductor device according to claim 3 , wherein a buffer layer formed of GaAs or GaN exists between the second active region layer and the substrate.5. The ...

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Номер записи: 39
09-05-2013 дата публикации

Method and Systems for Characterization and Production of High Quality Silicon

Номер: US20130112134A1
Автор: Doerbeck Friedrich H., Spencer David C., Walter Jimmie D.
Принадлежит: GIGA INDUSTRIES, INC.

Computer controlled quality control methods for manufacturing high purity polycrystalline granules are introduced. Polycrystalline silicon granules are sampled and converted into single crystal specimen in computer controlled system, eliminating the need of human operator in controlling the processing parameters. Single crystal silicon test samples, then characterized by FTIR and other standard analysis, are therefore more representative of the starting granular silicon. 120-. (canceled)21. A Silicon pebble converter , comprising:a quartz process tube;a plunger located within a lower section of the quartz process tube for supporting Silicon pebbles;a Silicon pedestal located within an upper section of the quartz tube above the Silicon pebbles;a radio-frequency (RF) coil encircling the quartz process tube, the RF coil configured to heat the Silicon pebbles within the quartz process tube; anda moveable RF-heated susceptor configured to pre-heat the Silicon pedestal, the RF-heated susceptor partially surrounding the quartz tube in a first position adjacent to the RF coil, the RF-heated susceptor heated by radiation from the RF coil in the first position, the RF-heated susceptor configured to move to second position at a distance away from the quartz process tube and the RF coil when the pedestal has been pre-heated to a desired temperature.221. The Silicon pebble converter of claim , further comprising:an upper mount coupling the Silicon pedestal to an upper shaft that permits vertical and rotational movement of Silicon pedestal; anda lower mount coupling the plunger to a lower shaft that permits vertical and rotational movement of the plunger.23. The Silicon pebble converter of claim 22 , further comprising:a control system configured to drive the upper shaft to control movement of the Silicon pedestal within the quartz process tube, the control system configured to drive the lower shaft to control movement of the plunger within the quartz process tube.24. The Silicon ...

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Номер записи: 40
16-05-2013 дата публикации

Electrodeposited Nano-Twins Copper Layer and Method of Fabricating the Same

Номер: US20130122326A1
Автор: CHEN Chih, LIU Taochi, TU King-Ning
Принадлежит: NATIONAL CHIAO TUNG UNIVERSITY

An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process. 1. An electrodeposited nano-twins copper metal layer , wherein over 50% of a volume of the nano-twins copper metal layer comprises a plurality of crystal grains , each of the plurality of crystal grain is connected with one another , and each crystal grain is formed as a result of the plurality of nano-twins working to stack in the orientation of the [111] crystal axis , for which an angle included between neighboring crystal grains is 0° to 20°.2. The electrodeposited nano-twins copper metal layer according to claim 1 , wherein the nano-twins copper metal layer further comprises a seed layer claim 1 , which takes up 1% to 50% of the volume of the nano-twins copper metal layer.3. The electrodeposited nano-twins copper metal layer according to claim 1 , wherein a [111] surface of the nano-twins is exposed on over 50% of a surface of the nano-twins copper metal layer.4. The electrodeposited nano-twins copper metal layers according to claim 1 , wherein a thickness of the nano-twins copper metal layer is 0.1 μm-500 μm.5. The electrodeposited nano-twins copper metal layer according to claim 4 , wherein the thickness of the nano-twins copper metal layer is 0.8 μm-200 μm.6. The electrodeposited nano-twins copper metal layer according to claim 1 , wherein at least 50% of the crystal ...

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Номер записи: 41
16-05-2013 дата публикации

Silicon Layer for Stopping Dislocation Propagation

Номер: US20130122674A1
Автор: Chang Weng, Chen Kuan-Yu, LIN Hsien-Hsin, Su Chien-Chang, SUNG Hsueh-Chang, Yu Ming-Hua
Принадлежит: Taiwan Semiconductor Manufacturing Company, Ltd.

A composite semiconductor structure and method of forming the same are provided. The composite semiconductor structure includes a first silicon-containing compound layer comprising an element selected from the group consisting essentially of germanium and carbon; a silicon layer on the first silicon-containing compound layer, wherein the silicon layer comprises substantially pure silicon; and a second silicon-containing compound layer comprising the element on the silicon layer. The first and the second silicon-containing compound layers have substantially lower silicon concentrations than the silicon layer. The composite semiconductor structure may be formed as source/drain regions of metal-oxide-semiconductor (MOS) devices. 1. A method comprising:forming a first silicon-containing compound layer, wherein the first silicon-containing compound layer comprises an element selected from the group consisting essentially of germanium and carbon;forming a silicon layer over the first silicon-containing compound layer, wherein the silicon layer comprises substantially pure silicon; andforming a second silicon-containing compound layer comprising the element over the silicon layer, wherein the first and the second silicon-containing compound layers have lower silicon concentrations than the silicon layer.2. The method of claim 1 , wherein each of the steps of forming the first silicon-containing compound layer claim 1 , the silicon layer claim 1 , and the second silicon-containing compound layer comprises in-situ doping an impurity selected from the group consisting essentially of a p-type impurity and an n-type impurity.3. The method of claim 1 , wherein each of the steps of forming the first silicon-containing compound layer claim 1 , the silicon layer claim 1 , and the second silicon-containing compound layer comprises epitaxial growth.4. The method of further comprising implanting an impurity into the second silicon-containing compound layer claim 1 , wherein an end-of- ...

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Номер записи: 42
30-05-2013 дата публикации

SYSTEMS AND PROCESSES FOR CONTINUOUS GROWING OF INGOTS

Номер: US20130133567A1
Автор: Bender David L.
Принадлежит: MEMC ELECTRONIC MATERIALS, INC.

An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput. 1. A process for improved growth of a single crystal ingot from a seed crystal positioned at a crystal/melt interface in a molten material comprising:containing the molten material in a low aspect ratio, wide diameter crucible for reducing convection currents and thermal variations in the melt;melting solid crystalline material in a pre melter for providing a substantially continuous replenishment of molten material to the crucible for maintaining the crystal/melt interface at a desired level in the crucible;providing a plurality of heaters beneath the crucible for establishing corresponding thermal zones across the melt;controlling the thermal output of the heaters for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth.2. A process according to wherein the step of providing substantially continuous replenishment of molten material to the crucible for maintaining the crystal/melt interface at a desired level further ...

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Номер записи: 43
30-05-2013 дата публикации

Crystal Growth Device

Номер: US20130133569A1
Автор: Hsu Bruce, Hsu Wen-Ching, Lan Chung-Wen, Lan Wen-Chieh, Pai Kai-Yuan, Yang Yu-Min, Yu Wen-Huai
Принадлежит: SINO-AMERICAN SILICON PRODUCTS INC.

A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone. 1. A crystal growth device comprising:a crucible having a bottom and a top opening; anda heater setting surrounding said crucible and movable relative to said crucible along a top-bottom direction of said crucible and between first and second positions, said heater setting including a first temperature heating zone and a second temperature heating zone higher in temperature than said first temperature heating zone, said heater setting being in said first position when said crucible is in said second temperature heating zone and in said second position when said crucible is in said first temperature heating zone.2. The crystal growth device of claim 1 , wherein said heater setting includes a heating member surrounding said crucible to heat said crucible claim 1 , and a heat insulation member surrounding said crucible and covering an inner surface of a lower part of said heating member claim 1 , said first temperature heating zone being confined by said heating insulation member and said lower part of said heating member claim 1 , said second temperature heating zone being confined by an upper part of said heating member immediately above said first temperature heating zone.3. The crystal growth device of claim 2 , wherein said heat insulation member is made of a material having a heat conductivity of 0.5-0.01 W/mK.4. The crystal growth device of ...

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Номер записи: 44
06-06-2013 дата публикации

METHOD FOR PRODUCING DIAMOND LAYERS AND DIAMONDS PRODUCED BY THE METHOD

Номер: US20130143022A1
Автор: Fischer Martin, Gsell Stefan, Schreck Matthias
Принадлежит: UNIVERSITAET AUGSBURG

The present invention relates to a method for producing diamond layers, wherein firstly, in a first growing step, diamond is grown on a growing surface of a off axis or a off-axis heterosubstrate in such a way that a texture width, in particular a polar and/or azimuthal texture width, of a diamond layer produced during the growth decreases with increasing distance from the substrate and then, in a second growing step, diamond is grown in such a way that the texture width of the diamond layer remains substantially constant as the distance from the substrate further increases, and lattice planes of the substrate being inclined by an angle greater than zero with respect to the growing surface. 1. A method for producing diamond layers , wherein diamond is first grown in a first growth step onto a growth surface of an off-axis heterosubstrate or a off-axis heterosubstrate such that a texture width , in particular a polar and/or azimuthal texture width , of a diamond layer arising through the growing on reduces with an increasing distance from the substrate and then , in a second growth step , diamond is grown on so that the texture width of the diamond layer remains substantially constant with a further increasing spacing from the substrate , wherein networkplanes or network planes of the substrate being inclined by an angle greater than zero with respect to the growth surface.2. A method for producing diamond layers , wherein diamond is grown onto a growth surface of an off-axis heterosubstrate or a off-axis heterosubstrate; wherein the heterosubstrate has an iridium layer on an off-axis buffer layer , on a preferably monocrystalline silicon substrate; and wherein network planes of the iridium layer are inclined by an angle larger than zero with respect to the growth surface.3. The method in accordance with claim 2 , wherein the buffer layer is or has an oxide buffer layer claim 2 , preferably yttria-stabilized zirconia (YSZ) claim 2 , with the heterosubstrates ...

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Номер записи: 45
13-06-2013 дата публикации

NONLINEAR OPTICAL CdSiP2 CRYSTAL FOR USE IN SURGICAL LASER

Номер: US20130148189A1
Автор: Schunemann Peter G., Zawilski Kevin T.
Принадлежит: BAE Systems Information and Electronic Systems Integration Inc.

CdSiPcrystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 μm, 1.55 μm, and 2 μm lasers to wavelengths between 2 μm and 10 μm. Due to the high thermal conductivity and low losses of the claimed CdSiPcrystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 μm laser source for use as a medical laser scalpel is also disclosed, in which a CdSiPcrystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 μm. 1. A nonlinear optical device comprising a negative uniaxial II-IV-Vcrystal belonging to the space point group 42 m and having nlo properties , whereby at least one incident beam of electromagnetic radiation can be directed into said crystal so as to generate electromagnetic radiation emerging from said crystal that includes at least one output wavelength different from the wavelengths of all incident beams of radiation , and wherein said crystal is a single crystal of CdSiP.220-. (canceled)21. A method for producing CdSiPcrystals comprising the steps of:(a) vacuum sealing cadmium (Cd), silicon (Si), and phosphorous (P) in an ampoule in a molar ratio of approximately Cd:Si:P=1:1:2, not including any excess quantities added so as to account for a vapor phase above a melt, the Cd and Si being physically mixed at a first end of the ampoule and the P being located at a second end of the ampoule;{'sub': 2', '2, '(b) heating the ampoule so that the Cd and the Si are maintained at a hot zone temperature at least near the melting point of CdSiPwhile the P is maintained at a cold zone temperature ...

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Номер записи: 46
13-06-2013 дата публикации

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

Номер: US20130149846A1
Автор: KOSHI Yasunobu, Maeda Kiyohiko, NISHIDA Keigo
Принадлежит: HITACHI KOKUSAI ELECTRIC INC.

A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times. 1. A method of manufacturing a semiconductor device , comprising forming a silicon film by performing a cycle at least twice , the cycle including a nucleus growth suppression process of supplying a chlorine-containing gas onto a substrate to suppress a growth of nuclei and control a local growth of silicon on the substrate and a nucleus formation process of supplying a silicon-containing gas onto the substrate to form silicon nuclei on the substrate ,wherein a time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process.2. A substrate processing apparatus comprising:a process chamber configured to process a substrate;a chlorine-containing gas supply system configured to supply at least a chlorine-containing gas into the process chamber;a silicon-containing gas supply system configured to supply at least a silicon-containing gas into the process chamber; anda controller configured to control at least the chlorine-containing gas supply system and the silicon-containing gas supply system to form a silicon film by performing a cycle at least twice, the cycle including a nucleus growth suppression process of supplying the chlorine-containing gas onto the substrate to suppress a growth of nuclei and control a local growth of silicon on the substrate and a nucleus formation process of supplying the silicon-containing gas onto the substrate to form silicon nuclei on the substrate, wherein a time required for the ...

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Номер записи: 47
20-06-2013 дата публикации

Bulk Growth Grain Controlled Directional Solidification Device and Method

Номер: US20130152851A1
Автор: Richard H. Berg, Richard Heckert, Tao Li
Принадлежит: SPX Corp

A solidification system is provided and includes a crucible, heater, insulation, movable insulation, and radiation regulator. The crucible is configured to retain a volume of silicon. The heater is to heat the crucible. The heater being configured to provide sufficient heat to melt the volume of silicon. The insulation is to reduce heat loss from a first portion of the crucible. The movable insulation to regulate heat loss from a second portion of the crucible. The radiation regulator is to regulate radiant heat loss over the second portion of the crucible. The radiation regulator is configured to modulate a size of an opening in the radiation regular through which radiant heat dissipates from.

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Номер записи: 48
20-06-2013 дата публикации

METHOD FOR MANUFACTURING A POROUS SYNTHETIC DIAMOND MATERIAL

Номер: US20130156974A1
Автор: Girard Hugues, Scorsone Emmanuel
Принадлежит: Commissariat A L'Energie Atomique Et Aux Energies Alternatives

A method of manufacturing a diamond layer having a porous three-dimensional structure, the method being of the type which includes growing the diamond layer from a sacrificial material and gradually decomposing said sacrificial material during growth of the diamond layer, said material including the following steps; 1) provision of a substrate capable of supporting the plasma-enhanced chemical vapour deposition growth of the diamond layer on at least one of the surfaces of of the substrate, the substrate comprising, on said at least one surface thereof, a layer made of a sacrificial material having a porous three-dimensional structure capable of gradually decomposing upon contact with said plasma, the layer of sacrificial material containing diamond grains of nanometric size, and 2) growth by plasma-enhanced chemical vapour deposition of the diamond layer from diamond grains and concomitant and gradual decomposition of the scrificial material upon contact with said plasma. 1. Method for manufacturing a diamond layer having a porous three-dimensional structure , the method being of the type which includes growing the diamond layer from a sacrificial material and gradually decomposing said sacrificial material during growth of the diamond layer , said method including the following steps:1) provision of a substrate capable of supporting the plasma-enhanced chemical vapour deposition growth of the diamond layer on at least one of the faces of the substrate, the substrate comprising on said at least one face a layer made of a sacrificial material having a porous three-dimensional structure and being able to decompose progressively upon contact with said plasma, the layer of sacrificial material containing diamond grains of nanometric size;2) growth by plasma-enhanced chemical vapour deposition of the diamond layer from diamond grains and concomitant and gradual decomposition of the sacrificial material upon contact with said plasma.2. Method for manufacturing according ...

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Номер записи: 49
20-06-2013 дата публикации

Single crystal silicon tfts made by lateral crystallization from a nanowire seed

Номер: US20130157447A1
Автор: Robert A. Street, Sourobh Raychaudhuri
Принадлежит: Palo Alto Research Center Inc

A method can include depositing a thin metal film on a substrate of a sample, establishing a metal island on the substrate by patterning the thin metal film, and annealing the sample to de-wet the metal island and form a metal droplet from the metal island. The method can also include growing a nanowire on the substrate using the metal droplet as a catalyst, depositing a thin film of a semiconductor material on the sample, annealing the sample to allow for lateral crystallization to form a crystal grain, and patterning the crystal grain to establish a crystal island. An electronic device can be fabricated using the crystal island.

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Номер записи: 50
04-07-2013 дата публикации

Sheet wafer furnace with gas preservation system

Номер: US20130167588A1
Автор: Leo Van Glabbeek, Stephen Yamartino, Steven Sherman
Принадлежит: Individual

A sheet wafer furnace has a chamber having an opening, and a crucible, within the chamber, and spaced from the opening. The furnace also has a puller configured to pull a sheet wafer from molten material in the crucible and through the opening in the chamber, and a seal across the opening of the chamber.

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Номер записи: 51
01-08-2013 дата публикации

CRUCIBLES FOR HOLDING MOLTEN MATERIAL AND METHODS FOR PRODUCING THEM AND FOR THEIR USE

Номер: US20130192302A1
Автор: Deshpande Aditya, Hayes Shawn W., Kasthuri Jaishankar, Philllips Richard J.
Принадлежит:

Coated crucibles for holding molten material are disclosed. In some embodiments, the crucibles are used to prepare multicrystalline silicon ingots by a directional solidification process. Methods for preparing such crucibles and methods for preparing silicon ingots by use of such crucibles are also disclosed. 1. A crucible for holding molten material , the crucible comprising:a body having a bottom and a sidewall extending up from the bottom, the bottom and sidewall defining a cavity for holding the molten material, the sidewall having an inner surface and an outer surface;a release coating comprising zirconia; anda bond coating disposed between the release coating and at least a portion of the inner surface of the sidewall.2. The crucible as set forth in wherein the release coating comprises at least about 10 wt % zirconia.3. The crucible as set forth in wherein the release coating comprises a stabilizer selected from the group consisting of yttria claim 1 , calcia and magnesia.4. The crucible as set forth in wherein the zirconia is fully stabilized.5. The crucible as set forth in wherein the stabilizer is yttria.6. The crucible as set forth in wherein the molar ratio of yttria to zirconia is at least about 2 to 23.7. The crucible as set forth in wherein the bond coating comprises an oxide or silicate selected from the group consisting of yttria claim 1 , magnesia claim 1 , calcia claim 1 , ceria claim 1 , lanthanum oxide claim 1 , yttrium silicate claim 1 , magnesium silicate claim 1 , calcium silicate claim 1 , cerium silicate and lanthanum silicate.8. The crucible as set forth in wherein the bond coating comprises at least about 10 wt % yttria claim 7 , magnesia claim 7 , calcia claim 7 , ceria claim 7 , lanthanum oxide claim 7 , yttrium silicate claim 7 , magnesium silicate claim 7 , calcium silicate claim 7 , cerium silicate and/or lanthanum silicate.9. The crucible as set forth in wherein the bond coating comprises yttria.10. The crucible as set forth in ...

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Номер записи: 52
01-08-2013 дата публикации

METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL

Номер: US20130192518A1
Автор: ALTMANNSHOFER Ludwig, Fischer Joerg, Riemann Helge, von Ammon Wilfried
Принадлежит: SILTRONIC AG

A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck. 1. A device for producing a single crystal of semiconductor material , comprisinga dish for receiving granules of semiconductor material, the dish having an opening at its center which is extended to a run-off tube;a first induction heating coil for melting granules on the dish;a second induction heating coil for transferring energy to a melt formed by the molten granules, the second induction heating coil having a passage opening for the melt at its center; anda gas delivery device for the controlled delivery of a gas into a region where a melt neck of the melt and the run-off tube touch.2. The device of claim 1 , wherein the instrument for the controlled delivery of a gas comprises a camera claim 1 , a controller and a nozzle.3. The device of claim 1 , wherein the dish is made of silicon.4. The device of claim 1 , wherein the first induction coil has a downwardly extending segment which extends downwards into the opening in the center of the dish and terminates below an upper surface of the dish.5. The device of claim 1 , wherein the first induction coil is cooled by a cooling channel formed in the coil claim 1 , and the coil with its cooling channel are connected by a bridging tube which is wound in a coil shape so as to have a high inductance for radio frequency ...

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Номер записи: 53
01-08-2013 дата публикации

CAST SILICON ingot prepared BY DIRECTIONAL SOLIDIFICATION

Номер: US20130193559A1
Автор: Jihong Chen
Принадлежит: SunEdison Products Singapore Pte Ltd

A cast silicon crystalline ingot comprises two major generally parallel surfaces, one of which is the front surface and the other of which is the back surface; a perimeter surface connecting the front surface and the back surface; and a bulk region between the front surface and the back surface; wherein the cast silicon crystalline ingot has no transverse dimension less than about five centimeters; the cast silicon crystalline ingot has a dislocation density of less than 1000 dislocations/cm 2 . Wafers sliced from the cast silicon crystalline ingot have solar cell efficiency of at least 17.5% and light induced degradation no greater than 0.2%.

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Номер записи: 54
08-08-2013 дата публикации

MONOCRYSTALLINE SEMICONDUCTOR MATERIALS

Номер: US20130199440A1
Автор: Hahn Jochem, Kerat Uwe, Schmid Christian
Принадлежит: SCHMID SILICON TECHNOLOGY GMBH

A method of producing a monocrystalline semiconductor material includes providing a starting material composed of the semiconductor material, transferring the starting material into a heating zone in which a melt composed of the semiconductor material is fed with the starting material, and lowering the melt from the heating zone and/or raising the heating zone such that, at a lower end portion of the melt, a solidification front forms along which the semiconductor material crystallizes in a desired structure, wherein the starting material composed of the semiconductor material is provided in liquid form and fed into the melt in liquid form. 2. The method according to claim 1 , wherein claim 1 , to provide the liquid starting material claim 1 , particles of the semiconductor material and/or a precursor compound of the semiconductor material are fed into a gas flow claim 1 , wherein the gas flow has sufficiently high temperature to convert the particles of the semiconductor material from a solid to a liquid and/or gaseous state and/or to thermally decompose the precursor compound.3. The method according to claim 2 , wherein the gas flow is conducted into a reactor container in which the liquid starting material is condensed and/or separated from the gas flow claim 2 , and the liquid starting material is fed directly from the reactor container into the melt composed of the semiconductor material.4. The method according to claim 3 , wherein the reactor container is coated internally regions which contact the liquid semiconductor material claim 3 , with a solid layer composed of the solidified semiconductor material.5. The method according to claim 4 , wherein thickness of the layer is monitored with a sensor and controlled by heating and/or cooling media.6. The method according to claim 3 , wherein the reactor has a solid bottom region which at least partly consists of the semiconductor material to be produced.7. The method according to claim 6 , wherein claim 6 , to ...

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Номер записи: 55
08-08-2013 дата публикации

SINGLE CRYSTAL DIAMOND PREPARED BY CVD

Номер: US20130202518A1
Автор: COLLINS John Lloyd, DORN Barbel Susanne Charlotte, Martineau Philip Maurice, Scarsbrook Geoffrey Alan, SUSSMANN Ricardo Simon, Twitchen Daniel James, WHITEHEAD Andrew John
Принадлежит: ELEMENT SIX LTD.

A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond. 1. Single crystal CVD diamond having one or more of the following characteristics:(a) a level of any single impurity of not greater than 5 ppm and a total impurity content of not greater than 10 ppm where impurity excludes hydrogen and its isotopic forms;{'sup': '−1', '(b) a photoluminescence (PL) line related to the cathodoluminescence (CL) line at 575 nm, measured at 77 K under 514 nm Ar ion laser excitation (nominally 300 mW incident beam), which has a peak height<1/1000 of the diamond Raman peak at 1332 cm;'}{'sup': '−5', '(c) a free exciton (FE) emission, where the strength of the free exciton emission excited by 193 nm ArF excimer laser at room temperature is such that the quantum yield for free exciton emission is at least 10;'}{'sup': '0', '(d) in electron paramagnetic resonance (EPR), a single substitutional nitrogen centre [N—C]at a concentration<40 ppb;'}{'sup': 17', '−3, '(e) in EPR, a spin density<1×10cmat g=2.0028;'}(f) low or absent single substitutional nitrogen absorption at 270 nm in an ultraviolet (UV) spectrum; and{'sup': '−1', '(g) low or absent C—H stretch bond absorption in a spectral range 2500 to 3400 cmwavenumbers in an infrared (IR) spectrum.'}2. Single crystal CVD diamond according to claim 1 , wherein the single crystal CVD diamond has characteristic (a).3. Single crystal CVD diamond according to claim 2 , wherein the level of any single impurity is not greater than 0.5 to 1 ppm and the total impurity content is not greater than 2 to 5 ppm excluding hydrogen and its isotopic forms.4. Single crystal CVD diamond according to claim 1 , wherein the single crystal CVD diamond has characteristic (b).5. Single crystal CVD diamond according to claim 1 , wherein the single crystal CVD diamond has characteristic (c).6. Single crystal ...

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Номер записи: 56
15-08-2013 дата публикации

Methods of producing crystalline semiconductor materials

Номер: US20130206056A1
Автор: Christian Schmid, Jochem Hahn, Uwe Kerat
Принадлежит: SCHMID SILICON TECHNOLOGY GMBH

A method of producing a crystalline semiconductor material includes feeding particles of the semiconductor material and/or a precursor compound of the semiconductor material into a gas flow, wherein the gas flow has a sufficiently high temperature to convert the particles of the semiconductor material from a solid into a liquid and/or gaseous state and/or to thermally decompose the precursor compound, condensing out and/or separating the liquid semiconductor material from the gas flow, and converting the liquid semiconductor material to a solid state with formation of mono- or polycrystalline crystal properties.

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Номер записи: 57
22-08-2013 дата публикации

Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt

Номер: US20130213295A1
Автор: Brian H. Mackintosh, Dawei Sun, Peter L. Kellerman
Принадлежит: Varian Semiconductor Equipment Associates Inc

An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

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Номер записи: 58
29-08-2013 дата публикации

SYSTEM AND METHOD FOR LIQUID SILICON CONTAINMENT

Номер: US20130220213A1
Автор: Clark Roger F., Cliber James A., Stoddard Nathan G., Von Dollen Paul
Принадлежит:

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides. 1. A containment apparatus suitable for use in producing high purity silicon , the apparatus comprising:a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements; anda volume adapted to hold a quantity of breaching molten silicon, and the volume formed by a bottom and one or more sides.2. The apparatus of claim 1 , wherein the apparatus comprises carbon fiber composite.302. The apparatus of claim 1 , wherein the volume comprises at least about . meters cubed.4. The apparatus of claim 1 , further comprising one or more collars protruding from the shielding member or the bottom to protect structural elements or cooling elements.5. The apparatus of claim 1 , wherein the shielding member comprises a gabled structure.6. The apparatus of claim 5 , wherein the gabled structure comprises an end with a lip for directing molten silicon into the volume.7. The apparatus of claim 6 , further comprising at least two apertures disposed on each side of a ridge of the gabled structure.830. The apparatus of claim 7 , further comprising an aperture disposed on the ridge of the gabled structure.9. The apparatus of claim 5 , further comprising a generally U-shaped pan forming the volume and disposed generally under edges of the gabled structure.10. The apparatus of claim 9 , wherein the generally U-shaped pan comprises a plurality of trays with sides and in fluid communication with each other.11. The apparatus of claim 1 , wherein the containment apparatus is located ...

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Номер записи: 59
29-08-2013 дата публикации

Base material for growing single crystal diamond and method for producing single crystal diamond substrate

Номер: US20130220214A1
Автор: Hitoshi Noguchi
Принадлежит: Shin Etsu Chemical Co Ltd

The present invention is a base material for growing a single crystal diamond comprising a single crystal silicon substrate, a MgO film heteroepitaxially grown on a side of the single crystal silicon substrate where the single crystal diamond is to be grown, and an iridium film or a rhodium film heteroepitaxially grown on the MgO film. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.

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Номер записи: 60
29-08-2013 дата публикации

Method and an apparatus for growing a silicon single crystal from a melt

Номер: US20130220216A1
Автор: Piotr Filar
Принадлежит: SILTRONIC AG

Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction.

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Номер записи: 61
29-08-2013 дата публикации

CARBON THIN FILM, MOLD FOR MOLDING OPTICAL ELEMENT, AND METHOD FOR MANUFACTURING OPTICAL ELEMENT

Номер: US20130221548A1
Автор: IWAHORI Koichiro
Принадлежит: NIKON CORPORATION

A ta-C thin film (A) is formed by laminating a first unit structure () and a second unit structure () in this order on a base material (). The first unit structure () has mutually different amounts of spbonding in a first layer () and a second layer (), and has mutually different amounts of spbonding in the second layer () and a third layer (). The second unit structure () has mutually different amounts of spbonding in a first layer () and a second layer (), and has mutually different amounts of spbonding in the second layer () and a third layer (). 1. A carbon thin film made of tetrahedral amorphous carbon comprising:{'sup': 3', '3, 'a plurality of unit structures in which three or more layers having mutually different amounts of spbonding in adjacent layers are laminated in a film thickness direction (excluding a unit structure in which two layers having different amounts of spbonding are alternately laminated).'}2. The carbon thin film according to claim 1 ,{'sup': 3', '3', '3, 'wherein a first layer having an amount of spbonding of less than 65%, a second layer having an amount of spbonding of 65% to less than 75%, and a third layer having an amount of spbonding of 75% or more are laminated in this order in all of the unit structures.'}3. The carbon thin film according to claim 1 ,{'sup': 3', '3', '3', '3, 'wherein a first layer having an amount of spbonding of less than 65%, a second layer having an amount of spbonding of 65% to less than 75%, a third layer having an amount of spbonding of 75% or more, and a fourth layer having an amount of spbonding of 65% to less than 75% are laminated in this order in all of the unit structures.'}4. The carbon thin film according to claim 1 ,wherein a hardness is 27 GPa to 40 GPa, and an internal stress is −2.2 GPa to −1.0 GPa.5. The carbon thin film according to claim 1 ,wherein a film thickness is ⅓ or less of a total film thickness in all of the unit structures.6. A mold for molding an optical element comprising:{'claim- ...

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Номер записи: 62
29-08-2013 дата публикации

ELECTROMAGNETIC MIXING FOR NITRIDE CRYSTAL GROWTH

Номер: US20130224100A1
Автор: Von Dollen Paul
Принадлежит: The Regents of the University of California

A method and apparatus for bulk Group-III nitride crystal growth through inductive stirring in a sodium flux growth technique. A helical electromagnetic coil is closely wound around a non-conducting cylindrical crucible containing a conductive crystal growth solution, including both precursor gallium and sodium, wherein a nitrogen-containing atmosphere can be maintained at any pressure. A seed crystal is introduced with the crystal's growth interface submerged slightly below the solution's surface. Electrical contact is made to the coil and an AC electrical field is applied at a specified frequency, in order to create eddy currents within the conductive crystal growth solution, resulting in a steady-state flux of solution impinging on the submerged crystal's growth interface. 1. A method for growing a compound crystal , comprising:growing a Group-III nitride crystal using a flux-based growth, wherein the flux-based growth includes a solution comprised of at least one Group-III metal contained within a reactor vessel, and the solution is mixed through inductive stirring using one or more electromagnetic fields.2. The method of claim 1 , wherein:the solution is a conductive solution,the reactor vessel includes a helical electromagnetic coil wound around a non-conducting crucible containing the conductive solution, andan electrical field at a specified frequency is applied to the helical electromagnetic coil to create the electromagenetic fields, in order to create currents within the conductive solution, resulting in a flux of the conductive solution impinging on the Group-III nitride crystal's growth interface.3. The method of claim 2 , wherein the electromagnetic fields are controlled to create a directed flow of the solution towards the Group-III nitride crystal's growth interface.4. The method of claim 2 , wherein the electromagnetic fields are controlled to vary the solution's flow velocity and direction during the Group-III nitride crystal's growth.5. The method ...

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Номер записи: 63
05-09-2013 дата публикации

METHOD OF FORMING A GERMANIUM THIN FILM

Номер: US20130230975A1
Автор: HASEBE Kazuhide, KAKIMOTO Akinobu, NAKAJIMA Shigeru
Принадлежит: TOKYO ELECTRON LIMITED

A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas. 1. A method of forming a germanium thin film on an underlying film , the method comprising:forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas; andforming a germanium thin film on the germanium seed layer using a germane-based gas.2. The method of claim 1 , wherein the surface of the underlying film contains moisture.3. The method of claim 1 , further comprising applying moisture on the surface of the underlying film before forming the germanium seed layer.4. The method of claim 3 , wherein applying the moisture includes exposing the underlying film to a moisture-containing gas.5. The method of claim 4 , wherein the moisture-containing gas is atmosphere.6. The method of claim 3 , wherein applying moisture includes washing the underlying film with water.7. The method of claim 2 , wherein the moisture is selected from a hydroxyl group.8. The method of claim 1 , wherein the aminogermane-based gas includes at least one selected from a group consisting of the following gases:{'sub': 2', '3, 'GeH(NMe),'}{'sub': '3', 'GeH(NMeEt),'}{'sub': 2', '3, 'GeH(NEt),'}{'sub': '3', 'GeH(NHEt),'}{'sub': '3', 'GeH(NHi-Pr),'}{'sub': '3', 'GeH(NHt-Bu),'}{'sub': 2', '2', '2, 'GeH(NMe),'}{'sub': 2', '2, 'GeH(NMeEt),'}{'sub': 2', '2', '2, 'GeH(NEt),'}{'sub': 2', '2, 'GeH(NHi-Pr),'}{'sub': 2', '2, 'GeH(NHt-Bu),'}{'sub': 3', '2, 'GeH(NMe),'}{'sub': '3', 'GeH(NMeEt),'}{'sub': 3', '2, 'GeH(NEt),'}{'sub': '3', 'GeH(NHEt),'}{'sub': '3', 'GeH(NHi-Pr), and'}{'sub': '3', 'GeH(NHt-Bu).'}9. The method of claim 1 , wherein the germane-based gas includes at least one selected from a group consisting of the following gases:{'sub': '4', 'GeH,'}{'sub': 2 ...

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Номер записи: 64
12-09-2013 дата публикации

Weir method for improved single crystal growth in a continuous czochralski process

Номер: US20130233237A1
Автор: David E. A. Smith, David L. Bender
Принадлежит: Solaicx Inc

A method is disclosed for continuous CZ crystal growing wherein one or more crystal ingots are pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material that is continuously replenished by crystalline feedstock. The method includes separating the molten crystalline material, controlling the flow of the molten crystalline material and defining an annular space with respect to sidewalls of a heat shield in the chamber.

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Номер записи: 65
19-09-2013 дата публикации

Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system

Номер: US20130239615A1
Автор: Devi Shanker Misra
Принадлежит: IIA Technologies Pte Ltd

The present application discloses the details of a microwave plasma chemical vapor deposition process that uses Nitrogen and Diborane simultaneously in combination along with the Methane and Hydrogen gases to grow white color diamonds. The invention embodies using nitrogen to avoid inclusions and impurities in the CVD diamond samples and Diborane for the color enhancement during the growth of diamond. It is also found that heating of the so grown diamonds to 2000 C results in significant color enhancement due to the compensation of Nitrogen and Boron centers in the samples. The origin of the various colors in diamond is explained on the basis of the band diagram of CVD diamond.

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Номер записи: 66
19-09-2013 дата публикации

Directional Solidification Furnace Having Movable Insulation System

Номер: US20130239620A1
Автор: Benjamin Michael Meyer, Lee William FERRY
Принадлежит: SunEdison Products Singapore Pte Ltd

A directional solidification furnace is disclosed that includes one or more movable insulating members disposed adjacent sides of the crucible. In a first position, the insulating members restrict the flow of heat away from the sides of the crucible. In a second position, the insulating members do not appreciably restrict the flow of heat away from the sides of the crucible. An actuating system is used to move the insulating members between the first position and the second position.

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Номер записи: 67
19-09-2013 дата публикации

COATED CRUCIBLE AND METHOD OF MAKING A COATED CRUCIBLE

Номер: US20130239882A1
Автор: Bramhall, Fawkes Dane, Hock Van Den, JR. Robert Billings
Принадлежит:

A crucible for forming a boule in a portion of an interior volume of the crucible. The crucible has a crucible base material forming the interior volume. The crucible base material is separated from the boule by a barrier coat disposed between the boule and the crucible base material. The barrier coat has a pin free conformal thickness conforming to a surface of the crucible base material regardless of a shape of a surface feature on the surface, the barrier coat having a melting point higher than that of the boule. 1. A reusable crucible for forming a boule in a portion of an interior volume of the crucible , the crucible comprising:a crucible base material forming the interior volume;a barrier coat disposed on the base material so that the crucible base material is separated from the boule by the barrier coat disposed between the boule and the crucible base material; andthe barrier coat having a pin free conformal and uniform thickness conforming to a surface of the crucible base material regardless of a shape of a surface feature on the surface, the barrier coat having a melting point higher than that of the boule.2. The crucible of wherein the surface comprises a diffusion barrier coat disposed between the barrier coat and the crucible base material claim 1 , wherein the diffusion barrier coat prevents inter diffusion between the barrier coat and the crucible base material.3. The crucible of wherein the barrier coat has a thickness being a selectable n monolayers thick.4. The crucible of wherein the barrier coat is substantially insoluble with respect to the boule.5. The crucible of wherein the barrier coat has a thickness sufficient to prevent interaction between the boule and the crucible base material.6. The crucible of wherein the barrier coat has a thickness less than 500 nm.7. The crucible of wherein the barrier coat is provided on the crucible base material with the absence of a native oxide between the barrier coat and the crucible base material.8. A ...

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Номер записи: 68
26-09-2013 дата публикации

SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD FOR PRODUCING SINGLE CRYSTAL

Номер: US20130247815A1
Автор: Hoshi Ryoji, Matsumoto Suguru, Shimada Toshiro, Sugawara Kosei
Принадлежит: SHIN-ETSU HANDOTAI CO., LTD.

A single crystal production apparatus including: a crucible containing raw material melt; a heater heating the raw material melt; a cooling cylinder that is cooled forcedly by a cooling medium; and a cooling chamber that houses the crucible, the heater, and the cooling cylinder, wherein a heat-shielding member having a heat insulating material is disposed, near an interface between the raw material melt and a single crystal being pulled, in such a way as to surround the single crystal being pulled, the cooling cylinder is disposed above the heat-shielding member in such a way as to surround the single crystal being pulled, and a cooling-cylinder-peripheral heat insulator is disposed with a gap provided between the cooling-cylinder-peripheral heat insulator and a periphery of the cooling cylinder in such a way as to surround the cooling cylinder. 18-. (canceled)9. A single crystal production apparatus comprising:a crucible containing raw material melt;a heater heating the raw material melt;a cooling cylinder that is cooled forcedly by a cooling medium; anda cooling chamber that houses the crucible, the heater, and the cooling cylinder,whereina heat-shielding member is disposed, near an interface between the raw material melt and a single crystal being pulled, in such a way as to surround the single crystal being pulled, the cooling cylinder is disposed above the heat-shielding member in such a way as to surround the single crystal being pulled, and a cooling-cylinder-peripheral heat insulator is disposed with a gap provided between the cooling-cylinder-peripheral heat insulator and a periphery of the cooling cylinder in such a way as to surround the cooling cylinder.10. The single crystal production apparatus according to claim 9 , wherein the gap has a width of 15 mm or more.11. The single crystal production apparatus according to claim 9 , whereinthe cooling-cylinder-peripheral heat insulator has a thickness of 20 mm or more, a lower end in a vertical direction ...

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Номер записи: 69
26-09-2013 дата публикации

SILICON WAFER

Номер: US20130251950A1
Автор: Kaneda Yuri
Принадлежит: GLOBALWAFERS JAPAN CO., LTD.

A silicon wafer is provided in which a dislocation is less likely Lo be generated originating from an oxide precipitate in a semiconductor device forming process, and a gettering effect with respect to Cu is increased. A silicon wafer is characterized in that a surface layer portion 1from a surface to a depth of at least 5 μm has an LSTD density of less than 1.0/cm, and that in a bulk portion except the surface layer portion planar oxide precipitates and polyhedral oxide precipitates having a scattered light intensity of 3000 to 5000 a.u., and a density of 1.0×10to 6.0×10(particles/cm) are each intermingled and grown, and a density ratio of the planar oxide precipitate to polyhedral oxide precipitate is represented by (planar oxide precipitate:polyhedral oxide precipitate=X: (100-X), where X is 10 to 40). 1. A silicon wafer in which a surface layer portion from a surface to a depth of at least 5 μm has an LSTD (Laser Scattering Topography Defect) density of less than 1.0/cm ,{'sup': 9', '9', '3, 'in a bulk portion except said surface layer portion, a planar oxide precipitate and a polyhedral oxide precipitate (each) having a scattered light intensity of 3000 to 5000 a.u., and a density of 1.0×10to 6.0×10(particles/cm) are intermingled and grown, and a density ratio of said planar oxide precipitate to polyhedral oxide precipitate is represented by (planar oxide precipitate:polyhedral oxide precipitate=X: (100-X), where X is 10 to 40).'}2. A silicon wafer as claimed in claim 1 , wherein said surface layer portion comprises a device forming layer from the surface to a depth of 2 to 5 μm and a device non-forming layer which is provided between said device forming layer and said bulk portion claim 1 , has a thickness of 5 to 15 μm claim 1 , and does not allow said planar oxide precipitate or polyhedral oxide precipitate to grow. 1. Field of the InventionThe present invention relates to a silicon wafer which is suitably used as a substrate for forming a semiconductor ...

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Номер записи: 70
03-10-2013 дата публикации

Electromagnetic casting method and apparatus for polycrystalline silicon

Номер: US20130255315A1
Автор: Koichi MAEGAWA, Mitsuo Yoshihara, Tomohiro Onizuka
Принадлежит: Sumco Corp

Disclosed is an electromagnetic casting method of polycrystalline silicon which is characterized in that polycrystalline silicon is continuously cast by charging silicon raw materials into a bottomless cold mold, melting the silicon raw materials using electromagnetic induction heating, and pulling down the molten silicon to solidify it, wherein the depth of solid-liquid interface before the start of the final solidification process is decreased by reducing a pull down rate of ingot in a final phase of steady-state casting. By adopting the method, the region of precipitation of foreign substances in the finally solidified portion of ingot can be reduced and cracking generation can be prevented upon production of a polycrystalline silicon as a substrate material for a solar cell.

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Номер записи: 71
03-10-2013 дата публикации

NANOCRYSTALLINE DIAMOND FILM AND METHOD FOR FABRICATING THE SAME

Номер: US20130260157A1
Автор: BAIK Young Joon, LEE Hak Joo, LEE Wook Seong, PARK Jong Keuk
Принадлежит:

A uniform nanocrystalline diamond thin film with minimized voids is formed on a silicon oxide-coated substrate and a method for fabricating same are disclosed. The nanocrystalline diamond thin film is formed by performing hydrogen plasma treatment, hydrocarbon plasma treatment or hydrocarbon thermal treatment on the substrate surface to maximize electrostatic attraction between the substrate surface and nanodiamond particles during the following ultrasonic seeding such that the nanodiamond particles are uniformly distributed and bound on the silicon oxide on the substrate. 1. A method for fabricating a nanocrystalline diamond thin film , comprising:preparing a silicon oxide-coated silicon substrate;surface-treating the substrate;immersing the substrate in a suspension of nanodiamond particles and dispersing and binding the nanodiamond particles onto the substrate by applying ultrasonic wave; andgrowing a nanocrystalline diamond thin film on the substrate on which the nanodiamond particles are bound,wherein, as a result of the surface treatment, an absolute value of a potential difference between the substrate and the nanodiamond particles becomes larger than that before the surface treatment.2. The method according to claim 1 , wherein said surface-treating the substrate comprises changing an Si—O bond of silicon oxide to a silanol group.3. The method according to claim 1 , wherein said surface-treating the substrate comprises changing an Si—O bond of silicon oxide to a Si—CHbond.4. The method according to claim 1 , wherein said surface-treating the substrate comprises treating the substrate surface with a hydrogen plasma.5. The method according to claim 1 , wherein said surface-treating the substrate comprises treating the substrate surface with a hydrogen plasma and a hydrocarbon plasma.6. The method according to claim 1 , wherein said surface-treating the substrate comprises thermally treating the substrate under a mixture gas atmosphere of hydrogen and ...

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Номер записи: 72
10-10-2013 дата публикации

SILICON SINGLE CRYSTAL MANUFACTURING APPARATUS AND SILICON SINGLE CRYSTAL MANUFACTURING METHOD

Номер: US20130263773A1
Автор: HAMADA Ken, Takanashi Keiichi
Принадлежит: SUMCO CORPORATION

The distance between the heat shield and the melt level of the melt can be regulated in a high precision. The real image includes at least the circular opening of the heat shield provided in such a way that the heat shield covers a part of the melt level of the silicon melt. The mirror image is a reflected image of the heat shield on the surface of the silicon melt. Based on the distance between the obtained real image and the mirror image, the melt level position of the silicon melt is computed, and the distance between the heat shield and the melt level position is regulated. 1. A silicon single crystal manufacturing apparatus for pulling the silicon single crystal from a silicon melt stored in a crucible comprising:an imaging device that takes an image of an area including a melt level of the silicon melt from a location above the melt level of the silicon melt in a direction tilted with respect to a silicon single crystal pulling axis in a predetermined angle;a heat shield that is provided in such a way that the heat shield covers a space above the melt level of the silicon melt with a separation from the melt level of the silicon melt, a circular opening, which the silicon single crystal penetrates during pulling the silicon single crystal, being provided to the heat shield; anda calculating part that takes a real image of the heat shield including at least the opening part and a mirror image of the heat shield reflected on a surface of the silicon melt, calculates an interval between the real image and the mirror image, and converts the interval to a melt level position of the silicon melt.2. The silicon single crystal manufacturing apparatus according to claim 1 , wherein the calculating part computes a central location of the heat shield with the imaging device by approximating a circle from an apparent oval image of the circular opening of the heat shield.3. The silicon single crystal manufacturing apparatus according to claim 1 , wherein the calculating ...

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Номер записи: 73
10-10-2013 дата публикации

Polycrystalline silicon ingot casting mold and method for producing same, and silicon nitride powder for mold release material for polycrystalline silicon ingot casting mold and slurry containing same

Номер: US20130264460A1
Автор: Michio Honda, Shinsuke Jida, Takeshi Yamao
Принадлежит: UBE Industries Ltd

A polycrystalline silicon ingot casting mold, and method for producing same. Mold release material being obtained by blending a silicon nitride powder (A) having an average particle diameter along the short axis of 0.6 to 13 μm with a silicon nitride powder (B) having an average particle diameter along the short axis of 0.1 to 0.3 μm at a weight ratio of 5:5 to 9:1; coating the mold surface with the slurry; and a heating the mold at 800 to 1200° C. in an atmosphere containing oxygen.

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Номер записи: 74
10-10-2013 дата публикации

CHEMICAL VAPOR DEPOSITION APPARATUS FOR SYNTHESIZING DIAMOND FILM AND METHOD FOR SYNTHESIZING DIAMOND FILM USING THE SAME

Номер: US20130266742A1
Автор: BAIK Young Joon, LEE Wook Seong, PARK Jong Keuk
Принадлежит: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

The present disclosure relates to a chemical vapor deposition apparatus for synthesizing a diamond film and a method for synthesizing a diamond film using the same, which maintains the substrate temperature at an optimum level by suppressing the rise of a substrate temperature, and, thus, improves the degree of activation of a diamond synthesizing gas to increase a diamond growth rate when synthesizing a diamond film. The chemical vapor deposition apparatus for synthesizing a diamond film according to the present disclosure includes a chamber in which a chemical vapor deposition process is performed, a substrate provided in the chamber and giving a place where diamond is grown, and a heat-shielding structure spaced above from the substrate, wherein the heat-shielding structure includes an opening through which a precursor gas is transferable. 1. A chemical vapor deposition apparatus for synthesizing a diamond film , comprising:a chamber in which a chemical vapor deposition process is performed;a substrate provided in the chamber and giving a place where diamond is grown; anda heat-shielding structure spaced upwards from the substrate,wherein the heat-shielding structure includes an opening through which a precursor gas is transferable.2. The chemical vapor deposition apparatus for synthesizing a diamond film according to claim 1 ,wherein the chemical vapor deposition apparatus is a hot filament chemical vapor deposition (HFCVD) apparatus, andwherein a high melting point filament is provided in an upper space of the chamber, and the heat-shielding structure is disposed between the high melting point filament and the substrate.3. The chemical vapor deposition apparatus for synthesizing a diamond film according to claim 1 ,wherein the chemical vapor deposition apparatus is a plasma assisted chemical vapor deposition (PACVD) apparatus, andwherein the heat-shielding structure is disposed in a space between the substrate and a plasma ball formed in an upper space of the ...

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Номер записи: 75
17-10-2013 дата публикации

METHOD FOR EVALUATING METAL CONTAMINATION OF SILICON SINGLE CRYSTAL

Номер: US20130269595A1
Автор: KURAGAKI Shunji
Принадлежит:

A method for evaluating metal contamination of a silicon single crystal grown by the Czochralski method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible comprises the steps of: setting the crystal suspending member as a negative electrode while setting the crucible as a positive electrode in a process for growing a non-convertible portion of the silicon single crystal; applying the voltage; collecting a sample from the non-convertible portion grown in association with the voltage application; and evaluating the metal contamination of the sample by an analysis in which Surface Photo Voltage method is adopted. In a process for growing an end-product convertible portion of the silicon single crystal, the voltage is applied such that the crystal suspending member is set as the positive electrode while the crucible is set as the negative electrode, or the voltage is not applied. 119-. (canceled)20. A method for evaluating metal contamination of a silicon single crystal grown by the Czochoralski method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible , the method comprising the steps of:setting the crystal suspending member as a negative electrode while setting the crucible as a positive electrode in a process for growing a non-convertible portion of the silicon single crystal;applying the voltage;collecting a sample from the non-convertible portion grown in association with the voltage application; andevaluating the metal contamination of the sample by an analysis in which Surface Photo Voltage method (SPV method) is adopted;wherein, in a process for growing an end-product convertible portion of the silicon single crystal, the voltage is applied under the condition that the crystal suspending member is set as the positive electrode while the crucible is set as the negative electrode, or the voltage is not applied.21. The method for evaluating metal ...

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Номер записи: 76
24-10-2013 дата публикации

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL, AND WAFER

Номер: US20130277809A1
Автор: Nakai Katsuhiko, Ohkubo Masamichi
Принадлежит: SILTRONIC AG

P-type silicon single crystals from which wafers having high resistivity, good radial uniformity of resistivity and less variation in resistivity can be obtained, are manufactured by the Czochralski method from an initial silicon melt in which boron and phosphorus are present, the boron concentration is not higher than 4E14 atoms/cmand the ratio of the phosphorus concentration to the boron concentration is not lower than 0.42 and not higher than 0.50. 110.-. (canceled)11. A method for manufacturing a silicon single crystal , comprising growing a p-type silicon single crystal by the Czochralski method from an initial silicon melt in which boron is present in a concentration not higher than 4E14 atoms/cm , phosphorus is contained in the initial silicon melt , and the ratio of phosphorus concentration to boron concentration is not lower than 0.42 and not higher than 0.50.12. The method of claim 11 , wherein the p-type silicon single crystal is grown wherein the ratio of the rate of cooling of an edge portion of the silicon single crystal to the rate of cooling of a central portion of the silicon single crystal is between 1.4 and 2.0.13. A p-type silicon single crystal grown by the Czochralski method from an initial silicon melt to which boron and phosphorus were added claim 11 , having a resistivity along a central crystal growth axis not lower than 50 Ω·cm and a rate of change in resistivity along said central crystal growth axis not higher than 10% claim 11 , measured in a constant diameter section of the p-type silicon single crystal up to a point where 80% of the single crystal has been solidified from the silicon melt.14. The p-type silicon single crystal of claim 13 , wherein the rate of change of resistivity in a cross-section perpendicular to said central crystal growth axis is not higher than 3%.15. A wafer obtained by slicing the p-type silicon single crystal of perpendicular to the central crystal growth axis.16. A wafer obtained by slicing the p-type ...

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Номер записи: 77
24-10-2013 дата публикации

METHOD FOR SYNTHESIZING A MATERIAL, IN PARTICULAR DIAMONDS, BY CHEMICAL VAPOR DEPOSITION, AS WELL AS DEVICE FOR APPLYING THE METHOD

Номер: US20130280860A1
Автор: TELLEZ OLIVA Horacio
Принадлежит:

Method for synthesising a material by chemical vapour deposition (CVD), according to which a plasma is created in a vacuum chamber in the vicinity of a substrate, and according to which a carbon-carrying substance and Hare introduced into the chamber in order to produce in the chamber a gas comprising substances carrying reactive-carbon atoms in the form of unsaturated molecules or radicals from which the synthesis of said material will be performed, and in that the electromagnetic absorption and inelastic diffusion spectra of the solid material to be synthesised are used to take from these spectra the absorption frequencies that contribute to the reactions that lead to the formation of the solid material to be synthesised, and in that energetic rays are produced in the form of a photon beam carrying quantities of energy determined by each of the frequencies corresponding to said absorption and inelastic diffusion frequencies, said photon beam being injected into the plasma where, for energy states of the solid material, an absorption of these photons having the energy corresponding to these energy states is effected by the substances carrying said reactive-carbon atoms. 1. Method for synthesising a material , in particular diamond , by chemical vapour deposition (CVD) , according to which a plasma is created in a vacuum chamber in the vicinity of a substrate arranged to carry the material to be synthesised , and according to which a substance carrying carbon , in particular CHor CH , and H , is introduced into the chamber in order to produce in the chamber a gas comprising substances carrying reactive carbon atoms in the form of unsaturated molecules or radicals from which the synthesis of said material will be performed , characterised in that the electromagnetic absorption and inelastic diffusion spectra of the material to be synthesised are used to take from the spectra the absorption frequencies that contribute to the reactions that lead to the formation of the ...

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Номер записи: 78
24-10-2013 дата публикации

Method and apparatus for germanium tin alloy formation by thermal cvd

Номер: US20130280891A1
Автор: Errol Antonio C. Sanchez, Yi-Chiau Huang, Yihwan Kim
Принадлежит: Individual

A method and apparatus for forming semiconductive semiconductor-metal alloy layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy, optionally including silicon, is formed on the substrate. The metal precursor is typically a metal halide, which may be provided by evaporating a liquid metal halide, subliming a solid metal halide, or by contacting a pure metal with a halogen gas. A group IV halide deposition control agent is used to provide selective deposition on semiconductive regions of the substrate relative to dielectric regions. The semiconductive semiconductor-metal alloy layers may be doped, for example with boron, phosphorus, and/or arsenic. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.

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Номер записи: 79
24-10-2013 дата публикации

APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD THEREFOR

Номер: US20130280896A1
Автор: Ohkubo Shuichi, Yamaguchi Masatsugu
Принадлежит:

To provide an apparatus for producing polycrystalline silicon and a method therefor to allow improvement in efficiency of polycrystalline silicon production by minimizing reactor downtime and to allow polycrystalline silicon production at a relatively low cost and in a large amount in a zinc reduction process for recovering formed silicon in a solid state. In a silicon producing apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, vertical reactor has reactor upper body and reactor lower body that can be vertically detached, and reactor lower body is movable in up-and-down and left-right directions. 1. An apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc , the apparatus comprising a reactor constituted of a reactor upper body and a reactor lower body that can be vertically separated , wherein a zinc gas feed line and a silicon tetrachloride gas feed line are connected to an upper part of the reactor upper body , an outlet of a zinc chloride-containing exhaust gas generated in a reaction is arranged at a lower part of the reactor upper body , or at an upper part of the reactor lower body , and the reactor lower body is arranged movably in up-and-down and left-right directions.2. The apparatus for producing polycrystalline silicon according to claim 1 , comprising a storage container for storing the polycrystalline silicon in the reactor lower body.3. The apparatus for producing polycrystalline silicon according to claim 1 , wherein a carriage of which a mounting surface is movable in an up-and-down direction by a lifting means is arranged in the reactor lower body claim 1 , and the reactor lower body is arranged to be movable in up-and-down and left-right directions by the carriage having the lifting means.4. The apparatus for producing polycrystalline silicon according to claim 2 , comprising a transport mechanism that can transport the storage container in an up-and-down direction or ...

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Номер записи: 80
31-10-2013 дата публикации

MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL

Номер: US20130284083A1
Автор: Daikoku Hironori, Ishii Tomokazu, Kado Motohisa, Kamei Kazuhito, Kasunoki Kazuhiko, KAWAI Yoichiro, Moriguchi Kouji, Okada Nobuhiro, SAKAMOTO Hidemitsu, Suzuki Hiroshi, Yashiro Nobuyoshi
Принадлежит:

A manufacturing apparatus for SiC single crystal has a control unit to control induction heating such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a side wall of a crucible by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SiC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: 1. A manufacturing apparatus of a SiC single crystal , comprising:a crucible including a tubular side wall and a bottom wall disposed at a lower end of the side wall, the crucible being able to house a SiC solution;a chamber housing the crucible;a vertical seed shaft having a lower end surface to which a SiC seed crystal is to be attached, the seed shaft being able to bring the SiC seed crystal attached to the lower end surface into contact with the SiC solution;an induction heating unit disposed around the side wall of the crucible in the chamber; anda control unit for controlling the induction heating unit, wherein {'br': None, 'i': D', '−T', 'D', '/R>, '(1)×21\u2003\u2003(1)'}, 'the control unit controls the induction heating unit such that a frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1), where D1 (mm) indicates a permeation depth of electromagnetic waves into the side wall by the induction heating unit, D2 (mm) indicates a permeation depth of electromagnetic waves into the SiC solution by the induction heating unit, T (mm) indicates a thickness of the side wall, and R (mm) indicates an inner radius of the crucible [{'br': None, 'i': D', 'f×σc×μc, 'sup': '1/2', '1=503292×(1/())\u2003\u2003(2)'}, {'br': None, 'i': D', 'f×σs×μs, 'sup': '1/2', '2=503292×(1/())\u2003\u2003(3)'}], 'where, D1 is defined by Formula (2), and D2 is defined by Formula (3)where, σc is an electric conductivity (S/m) of the side wall, σs is an electric ...

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Номер записи: 81
31-10-2013 дата публикации

CRUCIBLES

Номер: US20130284084A1
Автор: Roligheten Rune
Принадлежит: Steuler Solor GMBH

A method for manufacturing a crucible for the crystallization of silicium comprising the steps of •preparing a slurry of solids and liquids, said solids consisting of •silicon metal powder •up to 25% (w/w) SiC powder •up to 10% (w/w) SiN •up to 0.5% (w/w) of a catalyst •up to 1% (w/w) of a binder •forming the slurry into a green body of a crucible •heating the green body in a nitrogen atmosphere, optionally comprising inert gas, to react the silicon at least partially to silicon nitride. 1. A method for manufacturing a crucible for the crystallization of silicon comprising the steps of silicon metal powder', 'up to 25% (w/w) SiC powder', 'up to 10% (w/w) SiN', 'up to 0.5% (w/w) of a catalyst', 'up to 1% (w/w) of a binder, 'preparing a slurry of solids and liquids, said solids consisting of'}forming the slurry into a green body of a crucibleheating the green body in a nitrogen atmosphere, optionally comprising inert gas, to react the silicon at least partially to silicon nitride.2. The method of claim 1 , wherein the particle size of the silicon metal powder is in the range of 0 to 100 μm claim 1 , preferably 0 to 45 μm.3. The method of claim 1 , wherein at least 75% (w/w) of the solids are silicon metal powder.4. The method of claim 1 , wherein the solids comprise up to 15% (w/w) SiC powder.5. The method of claim 1 , wherein the catalyst is FeO and/or the binder is an aqueous polymer dispersion.6. The method of claim 1 , wherein the inert gas is selected from argon claim 1 , helium and mixtures thereof.7. The method of claim 1 , wherein the pressure of the nitrogen claim 1 , optionally including inert gas claim 1 , atmosphere is between 200 and 1400 mbar.8. The method of claim 1 , wherein heating is conducted at temperatures above 1050° C. claim 1 , preferably above 1250° C. claim 1 , more preferably above 1400° C.9. The method of claim 1 , wherein heating is conducted for 3 to 14 days at temperatures above 1000° C.10. The method of claim 1 , wherein the silicon ...

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Номер записи: 82
31-10-2013 дата публикации

Heating system for heating semiconductor material disposed in a crucible

Номер: US20130284715A1
Автор: Hsin-Hwa Hu, Hung-Chao Chiang, Tsung-Te Lai
Принадлежит: C Sun Manufacturing Ltd

A heating system includes first and second heating devices, a temperature sensor, a first controller and a second controller. The first and second heating devices are respectively arranged above a crucible and around the crucible for heating semiconductor material in the crucible. The temperature sensor is configured to detect the temperature of the first heating device and to generate a temperature signal. The first controller is configured to control operation of the first heating device so as to adjust the temperature thereof based on the temperature signal. The second controller is coupled to the second heating device and is configured to control operation of the second heating device so as to adjust the temperature thereof, based on an external control signal.

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Номер записи: 83
31-10-2013 дата публикации

Method for making epitaxial structure

Номер: US20130288457A1
Автор: Shou-Shan Fan, Yang Wei
Принадлежит: Individual

A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, placing a graphene layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The graphene layer includes a number of apertures to expose a part of the epitaxial growth surface. The epitaxial layer is grown from the exposed part of the epitaxial growth surface and through the aperture.

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Номер записи: 84
14-11-2013 дата публикации

SILICON MELT CONTACT MEMBER, PROCESS FOR PRODUCTION THEREOF, AND PROCESS FOR PRODUCTION OF CRYSTALLINE SILICON

Номер: US20130298822A1
Автор: Azuma Masanobu, Itoh Hironori, Komatsu Ryuichi
Принадлежит:

Provided are a silicon melt contact member which is markedly improved in liquid repellency to a silicon melt, which can retain the liquid repellency permanently, and which is suitable for production of crystalline silicon; and a process for efficient production of crystalline silicon, particularly, spherical crystalline silicon having high crystallinity, by use of the silicon melt contact member. A silicon melt contact member having a porous sintered body layer present on its surface, preferably the sintered body layer being present on a substrate of a ceramic material such as aluminum nitride, wherein the porous sintered body layer consists essentially of silicon nitride, has a thickness of 10 to 500 μm, and has, dispersed therein, many pores preferably having an average equivalent circle diameter of 1 to 25 μm at a pore-occupying area ratio of 30 to 80%, the pores connecting to each other to form communicating holes having a depth of 5 μm or more. 2. The silicon melt contact member according to claim 1 , wherein the porous sintered body layer is formed on a substrate.3. The silicon melt contact member according to claim 2 , wherein a surface of the substrate where the porous sintered body layer is formed is composed of silicon nitride.4. The silicon melt contact member according to claim 2 , wherein a thickness of the porous sintered body layer is 5 to 500 μm.5. The silicon melt contact member according to claim 1 , wherein pores having an average equivalent circle diameter of 1 to 25 μm are dispersedly present in a surface of the porous sintered body layer at a pore-occupying area ratio of 30 to 80%.6. The silicon melt contact member according to claim 1 , wherein the porous sintered body layer contains silicon dioxide in a proportion of 2 mass % or more claim 1 , but less than 50 mass %.7. The silicon melt contact member according to claim 1 , wherein an average depth of the pores present in a surface of the porous sintered body layer is 5 μm or more.8. A ...

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Номер записи: 85
14-11-2013 дата публикации

SUBSTRATE PROCESSING SYSTEM WITH LAMPHEAD HAVING TEMPERATURE MANAGEMENT

Номер: US20130298832A1
Автор: Brillhart Paul, IU DONGMING, KUPPURAO Satheesh, Ranish Joseph M.
Принадлежит:

Apparatus for processing a substrate are provided herein. In some embodiments, a lamphead for use in substrate processing includes a monolithic member having a contoured surface; a plurality of reflector cavities disposed in the contoured surface, wherein each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for a lamp; and a plurality of lamp passages, wherein each lamp passage extends into the monolithic member from one of the plurality of reflector cavities. 1. A lamphead for use in substrate processing , comprising:a monolithic member having a contoured surface;a plurality of reflector cavities disposed in the contoured surface, wherein each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for a lamp; anda plurality of lamp passages, wherein each lamp passage extends into the monolithic member from one of the plurality of reflector cavities.2. The lamphead of claim 1 , further comprising:a plurality of coolant passages disposed in the monolithic member and proximate to the plurality of lamp passages.3. The lamphead of claim 2 , wherein the plurality of lamp passages are arranged in a plurality of first arcs concentric about a central axis of the monolithic member and wherein the plurality of coolant passages are disposed in a plurality of second concentric rings about the central axis of the monolithic member.4. The lamphead of claim 3 , wherein a first one of the plurality of lamp passages disposed farther from a central axis of the monolithic member has a longer length than a second one of the plurality of lamp passages disposed closer to the central axis of the monolithic member.5. The lamphead of claim 1 , wherein each lamp passage extends into the monolithic member from a corresponding reflector cavity of the plurality of reflector cavities claim 1 , and wherein each lamp passage is configured to accommodate a lamp.6. The lamphead of claim 1 , wherein at least two lamp passages ...

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Номер записи: 86
21-11-2013 дата публикации

Sonos ono stack scaling

Номер: US20130307052A1
Автор: Fredrick Jenne, Krishnaswamy Ramkumar, Sagy Levy
Принадлежит: Cypress Semiconductor Corp

A method of scaling a nonvolatile trapped-charge memory device and the device made thereby is provided. In an embodiment, the method includes forming a channel region including polysilicon electrically connecting a source region and a drain region in a substrate. A tunneling layer is formed on the substrate over the channel region by oxidizing the substrate to form an oxide film and nitridizing the oxide film. A multi-layer charge trapping layer including an oxygen-rich first layer and an oxygen-lean second layer is formed on the tunneling layer, and a blocking layer deposited on the multi-layer charge trapping layer. In one embodiment, the method further includes a dilute wet oxidation to densify a deposited blocking oxide and to oxidize a portion of the oxygen-lean second layer.

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Номер записи: 87
21-11-2013 дата публикации

System and Method for Monolithic Crystal Growth

Номер: US20130309472A1
Автор: P. Shiv HALASYAMANI, Weiguo Zhang
Принадлежит: UNIVERSITY OF HOUSTON SYSTEM

A monolithic crystal having the atomic formula W n X m Y p Z r , with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.

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Номер записи: 88
28-11-2013 дата публикации

DOPED LOW-TEMPERATURE PHASE BARIUM METABORATE SINGLE CRYSTAL, THE MANUFACTURING METHOD THEREOF AND WAVE CHANGING ELEMENTS THEREFROM

Номер: US20130313478A1
Автор: CAI Shicong, CHEN Changzhang, HONG Maochun, Li Ding, LIN Hainan
Принадлежит: FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES

The present invention relates generally to the field of synthetic crystal, and more particularly, this invention relates to doped low-temperature phase barium metaborate single crystal, growth method and frequency-converter. Molten salt method was adopted. The single crystal completely overcome the shortcomings of BBO with strong deliquescence, almost no deliquescence; its frequency doubling effect and optical damage threshold has improved greatly compared with the BBO; its hardness increased significantly, the single crystal with Shore hardness of 101.3 and Mohs hardness of 6, however, BBO with Shore hardness of 71.2 and Mohs hardness of 4. From the UV-Vis region transmittance curves tests, the cut-off wavelength of the single crystal is 190 nm, wavelength of absorption onset is 205 nm. BBSAG is widely applied in the fields of laser and nonlinear optics, and in terms of frequency-converter of ultraviolet and deep-ultraviolet due to its excellent properties better than BBO. 1. A doped low-temperature phase barium metaborate single crystal , being a β-BBO single crystal doped with Si , optionally Al and optionally Ga , chemical formula of the single crystal being BaBO—SiAlGa , wherein x is more than 0 to 0.15 , y is 0 to 0.10 , and z is 0 to 0.04.2. The doped low-temperature phase barium metaborate single crystal according to claim 1 , wherein the β-BBO belongs to a trigonal system with C—R claim 1 , and unit cell parameter is a=b=12.5315 (15) Å claim 1 , c=12.7147 (30) Å claim 1 , Z=6 claim 1 , α=β=90° claim 1 , γ=120° in hexagonal coordinate.3. The doped low-temperature phase barium metaborate single crystal according to claim 1 , wherein the doped β-BBO single crystal is β-BBO doped with Si claim 1 , Al and Ga simultaneously.4. A preparation method for doped low-temperature phase barium metaborate single crystal according to claim 1 , wherein the preparation method comprises utilizing a molten salt method or a flux czochralski method.5. The preparation method for ...

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Номер записи: 89
28-11-2013 дата публикации

SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH

Номер: US20130313610A1
Автор: Sell Bernhard
Принадлежит:

Semiconductor devices having necked semiconductor bodies and methods of forming semiconductor bodies of varying width are described. For example, a semiconductor device includes a semiconductor body disposed above a substrate. A gate electrode stack is disposed over a portion of the semiconductor body to define a channel region in the semiconductor body under the gate electrode stack. Source and drain regions are defined in the semiconductor body on either side of the gate electrode stack. Sidewall spacers are disposed adjacent to the gate electrode stack and over only a portion of the source and drain regions. The portion of the source and drain regions under the sidewall spacers has a height and a width greater than a height and a width of the channel region of the semiconductor body. 1. A semiconductor device , comprising:a semiconductor body disposed above a substrate;a gate electrode stack disposed over a portion of the semiconductor body to define a channel region in the semiconductor body under the gate electrode stack and source and drain regions in the semiconductor body on either side of the gate electrode stack; andsidewall spacers disposed adjacent to the gate electrode stack and over only a portion of the source and drain regions, wherein the portion of the source and drain regions under the sidewall spacers has a height and a width greater than a height and a width of the channel region of the semiconductor body.2. The semiconductor device of claim 1 , wherein a portion of the source and drain regions not under the sidewall spacers has a height and a width greater than the height and the width of the portion of the source and drain regions under the sidewall spacers.3. The semiconductor device of claim 1 , wherein a portion of the source and drain regions not under the sidewall spacers has a height and a width approximately the same as the height and the width of the portion of the source and drain regions under the sidewall spacers.4. The ...

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Номер записи: 90
12-12-2013 дата публикации

DEVICE FOR GROWING SAPPHIRE INGOT AT HIGH SPEED AND SAPPHIRE COVER GLASS HAVING EXCELLENT OPTICAL PROPERTIES

Номер: US20130329296A1
Автор: CHEN GA-LANE, WANG CHUNG-PEI
Принадлежит: HON HAI PRECISION INDUSTRY CO., LTD.

A device grows sapphire ingots by dipping a sapphire seed into molten aluminum oxide and lifting and spinning the sapphire seed from the molten aluminum oxide to cause the molten aluminum oxide adhering to the sapphire. Meanwhile, the device controls temperature such that the molten aluminum oxide is crystallized on the sapphire seed which is gradually cooled down to a room temperature. The device also includes a housing and air controller for providing desire air conditions for growing the sapphire ingot. 1. A device , comprising:a crucible;an aluminum oxide material received in the crucible;a heater;a temperature controller configured for controlling the heater to heat the crucible such that the aluminum oxide material is molten into a liquid and a temperature above the liquid is smaller than a melting point of the aluminum oxide material and gradually decreases from the liquid to a top of the crucible;a heat preservation shell enclosing the crucible and configured for keeping a temperature filed within the crucible unchanged;a sapphire seed assembly comprising a sapphire seed;a driver configured for driving the sapphire seed assembly to move such that the sapphire seed dips into the liquid, and lifts out of the liquid and the crucible, and spins at predetermined speeds to cause that the liquid adheres to the sapphire seed, and is shaped cylinder-like, and is crystallized as the sapphire seed ascends and the temperature gradually decreases to form a sapphire ingot;a post-heating device configured for heating the sapphire ingot out of the crucible such that the sapphire ingot is gradually cooled down to a room temperature;a housing encloses the heat preservation shell and configured for providing air conditions and electromagnetic interference shielding for growing the sapphire ingot; andan air controller configured for vacuumizing the housing and introducing desire gases into the housing to control the air conditions within the housing.2. The device of claim 1 , ...

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Номер записи: 91
12-12-2013 дата публикации

METHOD OF FORMING THIN FILM POLY SILICON LAYER AND METHOD OF FORMING THIN FILM TRANSISTOR

Номер: US20130330886A1
Автор: Chang Heng-Yi, Huang Hieng-Hsiung, Liu Chin-Chang, Wang Wen-Chun
Принадлежит:

A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A method of forming a thin film transistor includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A first patterning process is performed on the thin film poly silicon layer to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed. 1. A method of forming a thin film poly silicon layer , comprising:providing a substrate, having a first surface;performing a heating treatment; andperforming a silicon thin film deposition process for directly forming a thin film poly silicon layer on the first surface of the substrate.2. The method of claim 1 , wherein the heating treatment comprises heating the substrate to a temperature higher than 450 degrees Celsius by a heating source.3. The method of claim 1 , wherein the heating treatment comprises heating the substrate to a temperature higher than 500 degrees Celsius by a heating source.4. The method of claim 1 , wherein the heating treatment comprises heating the substrate by a heating source claim 1 , and the heating source comprises a light heating source claim 1 , an ion beam heating source claim 1 , an electrode beam heating source claim 1 , a furnace tube heating source or a filament heating source.5. The method of claim 1 , wherein the silicon thin film deposition process comprises using a reactive gaseous material to form the thin film poly silicon layer on the first surface of the substrate.6. The method of claim 5 , wherein the reactive gaseous material comprises silane (SiH) or ...

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Номер записи: 92
12-12-2013 дата публикации

Method of forming thin film poly silicon layer

Номер: US20130330934A1
Автор: Chin-Chang Liu, Heng-Yi Chang, Hieng-Hsiung Huang, Wen-Chun Wang
Принадлежит: Wintek Corp

A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. The substrate has a first surface. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on the first surface of the substrate by a silicon thin film deposition process.

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Номер записи: 93
19-12-2013 дата публикации

DIAMOND GROWTH USING DIAMONDOIDS

Номер: US20130336873A1
Автор: Dahl Jeremy, Ishiwata Hitoshi, Melosh Nicholas A., Shen Zhi-Xun
Принадлежит:

Methods of growing diamond and resulting diamond nanoparticles and diamond films are described herein. An example of a method of growing diamond includes: (1) anchoring diamondoids to a substrate via chemical bonding between the diamondoids and the substrate; (2) forming a protective layer over the diamondoids; and (3) performing chemical vapor deposition using a carbon source to induce diamond growth over the protective layer and the diamondoids. 1. A method of growing diamond , comprising:anchoring diamondoids to a substrate via chemical bonding between the diamondoids and the substrate;forming a protective layer over the diamondoids; andperforming chemical vapor deposition using a carbon source to induce diamond growth over the protective layer and the diamondoids.2. The method of claim 1 , wherein anchoring the diamondoids to the substrate is performed via covalent bonding between the diamondoids and the substrate.3. The method of claim 1 , wherein the diamondoids are anchored to the substrate via at least one of —Si—O— linkages claim 1 , —P—O— linkages claim 1 , —C—O— linkages claim 1 , —S—O— linkages claim 1 , and —CO—O— linkages.4. The method of claim 1 , wherein the diamondoids are chemically functionalized to form covalent bonds with the substrate.5. The method of claim 1 , wherein the diamondoids are selected from at least one of thiol-functionalized diamondoids claim 1 , carboxy-functionalized diamondoids claim 1 , halo-functionalized diamondoids claim 1 , hydroxy-functionalized diamondoids claim 1 , cyano-functionalized diamondoids claim 1 , nitro-functionalized diamondoids claim 1 , amino-functionalized diamondoids claim 1 , silyl-functionalized diamondoids claim 1 , phosphoryl-functionalized diamondoids claim 1 , and sulfonic acid-functionalized diamondoids.6. The method of claim 1 , wherein anchoring the diamondoids to the substrate includes forming a monolayer of the diamondoids over the substrate claim 1 , and a seeding density of the diamondoids ...

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Номер записи: 94
19-12-2013 дата публикации

Semiconductor Structure and Method

Номер: US20130337631A1
Автор: Pu-Fang Chen, Sen-Hong Syue, Shiang-Bau Wang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A system and method for providing support to semiconductor wafer is provided. An embodiment comprises introducing a vacancy enhancing material during the formation of a semiconductor ingot prior to the semiconductor wafer being separated from the semiconductor ingot. The vacancy enhancing material forms vacancies at a high density within the semiconductor ingot, and the vacancies form bulk micro defects within the semiconductor wafer during high temperature processes such as annealing. These bulk micro defects help to provide support and strengthen the semiconductor wafer during subsequent processing and helps to reduce or eliminate a fingerprint overlay that may otherwise occur.

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Номер записи: 95
19-12-2013 дата публикации

METHOD OF MANUFACTURING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER MANUFACTURED BY THE METHOD

Номер: US20130337638A1
Автор: Kawashima Tadashi, NONAKA Naoya
Принадлежит:

A method of manufacturing an epitaxial silicon wafer including a silicon wafer having a surface added with phosphorus and an epitaxial film provided on the surface includes adjusting an in-plane thickness distribution of the epitaxial film formed on the surface of the silicon wafer based on an in-plane resistivity distribution of the silicon wafer before an epitaxial growth treatment. 1. A method of manufacturing an epitaxial silicon wafer comprising a silicon wafer added with phosphorus and an epitaxial film provided on a surface of the silicon wafer , the method comprising:adjusting an in-plane thickness distribution of the epitaxial film formed on the surface of the silicon wafer based on an in-plane resistivity distribution of the silicon wafer before an epitaxial growth treatment.2. The method of manufacturing the epitaxial silicon wafer according to claim 1 , whereinthe silicon wafer added with the phosphorus has a resistivity of 0.9 mΩ·cm or less.3. The method of manufacturing the epitaxial silicon wafer according to claim 1 , further comprising:on the silicon wafer having a resistivity at a center lower than a resistivity on an outer periphery, forming the epitaxial film to have a film thickness at the center of the silicon wafer thicker than a film thickness on the outer periphery of the silicon wafer.4. The method of manufacturing the epitaxial silicon wafer according to claim 3 , further comprising:when flowing a reaction gas for forming the epitaxial film along the surface of the silicon wafer, in the forming of the epitaxial film, controlling a flow amount of the reaction gas at the center of the silicon wafer to be larger than a flow amount of the reaction gas on the outer periphery of the silicon wafer.5. The method of manufacturing the epitaxial silicon wafer according to claim 3 , further comprising:when heating the silicon wafer, in the forming of the epitaxial film, controlling a temperature at the center of the silicon wafer to be higher than a ...

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Номер записи: 96
26-12-2013 дата публикации

Monitoring method and apparatus for excimer laser annealing process

Номер: US20130341310A1
Автор: Paul VAN DER WILT
Принадлежит: Coherent Lasersystems GmbH and Co KG

A method is disclosed evaluating a silicon layer crystallized by irradiation with pulses form an excimer-laser. The crystallization produces periodic features on the crystalized layer dependent on the number of and energy density in the pulses to which the layer has been exposed. An area of the layer is illuminated with light. A detector is arranged to detect light diffracted from the illuminated area and to determine from the detected diffracted light the energy density in the pulses to which the layer has been exposed.

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Номер записи: 97
26-12-2013 дата публикации

Synthesis and applications of graphene based nanomaterials

Номер: US20130344390A1
Автор: Carol Hirschmugl, Eric Mattson, Haihui Pu, Junhong Chen, Marija Gajdardziska-Josifovska, Michael Weinert
Принадлежит: UWM Research Foundation Inc

A composition of graphene-based nanomaterials and a method of preparing the composition are provided. A carbon-based precursor is dissolved in water to form a precursor suspension. The precursor suspension is placed onto a substrate, thereby forming a precursor assembly. The precursor assembly is annealed, thereby forming the graphene-based nanomaterials. The graphene-based nanomaterials are crystallographically ordered at least in part and configured to form a plurality of diffraction rings when probed by an incident electron beam. In one aspect, the graphene-based nanomaterials are semiconducting. In one aspect, a method of engineering an energy bandgap of graphene monoxide generally includes providing at least one atomic layer of graphene monoxide having a first energy bandgap, and applying a substantially planar strain is applied to the graphene monoxide, thereby tuning the first energy band gap to a second energy bandgap.

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Номер записи: 98
02-01-2014 дата публикации

POLYCRYSTALLINE SILICON ROD

Номер: US20140004377A1
Автор: Kaito Ryoichi
Принадлежит:

A polycrystalline silicon rod comprises a seed rod made of polycrystalline silicon, and a polycrystalline silicon deposit which is deposited on the outer circumferential surface of the seed rod by the CVD process. A diameter of the polycrystalline silicon rod is 77 mm or less. When the polycrystalline silicon rod is observed by an optical microscope with respect to the cross section perpendicular to an axis of the seed rod, needle-shaped crystals each having a length of 288 μm or less are uniformly distributed radially with the seed rod being as the center in the polycrystalline silicon deposit. The needle-shaped crystals account for 78% or more of the cross section. 1. A polycrystalline silicon rod comprising a seed rod made of polycrystalline silicon , and a polycrystalline silicon deposit which is deposited on an outer circumferential surface of the seed rod by the CVD process ,wherein a diameter of the polycrystalline silicon rod is 77 mm or less,wherein when the polycrystalline silicon rod is observed by an optical microscope with respect to across section perpendicular to an axis of the seed rod, needle-shaped crystals each having a length of 288 μm or less are uniformly distributed radially with the seed rod being as the center in the polycrystalline silicon deposit, andwherein said needle-shaped crystals account for 78% or more area of the cross section.2. The polycrystalline silicon rod according to claim 1 , wherein when the polycrystalline silicon rod is observed with respect to the cross section perpendicular to the axis of the seed rod claim 1 , lengths and widths of the needle-shaped crystals at a position away by 5 mm from the outer circumferential surface of the seed rod toward the outside in the radial direction thereof on the same circumference with the axis of the seed rod being as the center are distributed so that said lengths and said widths are respectively 115 μm or less and is 23 μm or less.3. The polycrystalline silicon rod according to ...

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Номер записи: 99
30-01-2014 дата публикации

PROCESS TO DISSOLVE THE OXIDE LAYER IN THE PERIPHERAL RING OF A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR TYPE

Номер: US20140030877A1
Автор: GRITTI Fabrice, GUIOT Eric, Kononchuk Oleg, Landru Didier, VEYTIZOU Christelle
Принадлежит: SOITEC

A process for avoiding formation of a Si—SiO—Henvironment during a dissolution treatment of a semiconductor-on-insulator structure that includes a carrier substrate, an oxide layer, a thin layer of semiconductor material and a peripheral ring in which the oxide layer is exposed. This process includes encapsulating at least the exposed oxide layer of the peripheral ring with semiconductor material by performing a creep thermal treatment; and performing an oxide dissolution treatment to reduce part of the thickness of the oxide layer. In this process, the semiconductor material that encapsulates the oxide layer has a thickness before the oxide dissolution that is at least twice that of the oxide that is to be dissolved, thus avoiding formation of a Si—SiO—Henvironment on the peripheral ring where the oxide layer would otherwise be exposed. 1. A process for avoiding formation of a Si—SiO—Henvironment during a dissolution treatment of a semiconductor-on-insulator structure successively comprising a carrier substrate , an oxide layer , a thin layer of semiconductor material and a peripheral ring in which the oxide layer is exposed , which process comprises:encapsulating at least the exposed oxide layer of the peripheral ring with semiconductor material by performing a creep thermal treatment; andperforming an oxide dissolution treatment to reduce part of the thickness of the oxide layer;{'sub': 2', '2, 'wherein the semiconductor material that encapsulates the oxide layer has a thickness before the oxide dissolution that is at least twice that of the oxide that is to be dissolved, thus avoiding formation of a Si—SiO—Henvironment on the peripheral ring where the oxide layer would otherwise be exposed.'}2. The process according to claim 1 , wherein the reduced part of the oxide layer thickness and the thickness of the surface layer have a ratio of six or seven.3. The process according to claim 1 , wherein the thickness of the oxide layer prior to the oxide dissolution ...

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Номер записи: 100