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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 19. Отображено 19.
22-08-2012 дата публикации

Modification method of mono-crystalline silicon wafer surfaces for solar batteries

Номер: CN102646758A
Автор: Yang Peizhi, Li Xueming, Liao Chengjun, Liao Hua
Принадлежит:

The invention provides a modification method of mono-crystalline silicon wafer surfaces for solar batteries in order to overcome the defects of antireflection coating process and surface texture process. The method is used for preparing mono-crystalline silicon wafers selectively absorbing solar spectra, and the technical scheme utilized includes placing mono-crystalline silicon wafers in a corrosion solution, adding metal ion compounds with catalytic activity into the solution, controlling the temperature and time of the reaction, and obtaining the mono-crystalline silicon wafers selectively absorbing solar spectra through the surface modification of ion catalysis to the mono-crystalline silicon wafers. According to the mono-crystalline silicon wafers after being processed, the average reflectance of wavelengths ranging from 350 nm to 1000 nm is reduced to below 9%, and the average reflectance of wavelengths ranging from 1100 nm to 2500 nm is increased to above 56%.

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Номер записи: 1
22-05-2013 дата публикации

Novel self-assembly method of ordered Ge/Si quantum dot array by nano-pore replication and sputtering deposition

Номер: CN103117210A
Автор: Xiong Fei, Yang Peizhi, Chen Yulu, Li Xueming
Принадлежит:

The invention provides a method of self-assembly growth of a large-area, even and ordered Ge quantum dot array on a Si substrate by sputtering deposition. The method includes preparation of ultrathin Si-based AAO (anodic aluminum oxide), preparation of a pattern substrate by nano-pore replication, and self-assembly growth of the even, ordered Ge quantum dot array on the surface of the pattern substrate by ion beam sputtering. Quantum dot growth process matching with the pattern substrate is obtained by controlling ion beam sputtering deposition temperature, ion beam flux voltage, and buffer layer thickness, so that Ge quantum dot nano-pores evenly and orderly grow at nucleation center. Even-size Ge quantum dots obtained are in hexagonal symmetrical distribution on the surface of the Si substrate, and the diameter of the quantum dots is adjustable. The method effectively overcomes the defects that distribution of the self-assembled Ge/Si quantum dots is random and disorder in position, the ...

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Номер записи: 2
24-04-2013 дата публикации

Preparation method for solar cell composite antireflection coating

Номер: CN103066161A
Автор: Yang Wen, Zi Xingfa, Yang Peizhi, Liu Ruiming, Wang Hairong
Принадлежит:

The invention relates to a preparation method for a solar cell composite antireflection coating and belongs to a physical deposition preparation method. According to the preparation method for the solar cell composite antireflection coating, four antireflection coating materials of zinc oxide (ZnO), titanium dioxide (TiO2), silica (SiO2) and magnesium fluoride (MgF2) are selected. A four-layer membrane system structure of Sub|MHLF|Air is adopted to prepare a broadband antireflection membrane, wherein the Sub is glass, the M is a TiO2-ZnO composite membrane layer, the H is a TiO2 membrane layer, the L is a SiO2 membrane layer and the F is MgF2 membrane layer. Controllable growth of membrane structure and membrane thickness is achieved. Technical indicators that the produced membrane layer is compact, few in pinhole, strong in adhesive force and the average transmission rate in 350-1200nm band reaches 96.8 percent are achieved.

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Номер записи: 3
29-07-2015 дата публикации

Method for induced growth of n-type nanocrystalline silicon quantum dot film by Sb

Номер: CN104810433A
Автор: Yang Wen, Chen Xiaobo, Yang Peizhi, Yuan Junbao, Duan Liangfei
Принадлежит:

The invention relates to a method for preparing an n-type nanocrystalline silicon quantum dot film, in particular to a method for the induced growth of silicon quantum dot film which has high number density and high crystalline fraction by metal Sb. The method has the main technical scheme that an Ar ion is firstly used for carrying out magnetron co-sputtering on an Si target, an Si3N4(or SiO2 or SiC) target and an Sb target, the sputtering power of each target is optimized, and Si-rich silicide and metal Sb multi-layer films are alternately deposited on monocrystalline silicon and a silica substrate; then, quick optothermal annealing equipment is adopted to anneal in a nitrogen atmosphere at the temperature of 1000DEG C for three minutes to form the Sb-doped nanocrystalline silicon quantum dot film which has the high number density and the high crystalline fraction and is embedded in an amorphous Si3N4(or SiO2 or SiC) matrix. The nanocrystalline silicon quantum dot film which is doped ...

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Номер записи: 4
25-07-2012 дата публикации

Method for preparing zinc oxide transparent conducting film by chemical bath deposition

Номер: CN102605354A
Автор: Yang Peizhi, Hua Qilin, Zhang Cheng, Sun Peipei, Zi Xingfa
Принадлежит:

The invention relates to a method for preparing a zinc oxide transparent conducting film by chemical bath deposition, belonging to the technical field of preparation of novel electronic functional film materials. The method comprises the following steps: I) pretreating a substrate; II) putting a mixture of a Zn source solution and an Al source solution into an open beaker, sufficiently stirring with a magnetic stirrer for about 10-20 minutes, slowly adding a complexing agent into a beaker, and sufficiently and uniformly stirring to obtain a clear and transparent solution A; III) regulating the pH value of the solution A to 9-11 to obtain a solution B; IV) after stopping stirring, vertically or horizontally putting the pretreated substrate to the solution B, and carrying out constant-temperature heating; and after reacting for 30-120 minutes, taking out the substrate, washing with deionized water, and drying at 120-150 DEG C to obtain the transparent zinc oxide film. The invention can be ...

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Номер записи: 5
24-04-2013 дата публикации

Low-temperature rapid crystallization method for amorphous silicon film

Номер: CN103060768A
Автор: Yang Wen, Duan Liangfei, Zhang Liyuan, Yang Peizhi, Zi Xingfa, Leng Tianjiu
Принадлежит:

The invention relates to a low-temperature rapid crystallization method for an amorphous silicon film. The method comprises the following steps of: based on monocrystalline silicon (crystalline phase 100) as a substrate sputtering a layer of amorphous silicon (alpha-silicon) film and an Al film on the monocrystalline silicon substrate by utilizing a magnetron sputtering coating instrument, and annealing with a photothermal annealing furnace in N2 at 150DEG C-200DEG C, so as to obtain a polycrystalline silicon film. The Al film can be used for inducing the amorphous silicon film to crystallize at lower temperature (150DEG C-200DEG C), and the polycrystalline silicon film with grain size of 20-100nm can be obtained, so that the cost is lowered, the annealing time is short, energy consumption for crystallization is reduced, the crystallization ratio achieves 40%-70%, and the amorphous silicon film can well meet the requirement of an amorphous silicon microcrystalline silicon laminated solar ...

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Номер записи: 6
24-07-2013 дата публикации

Medicago sativaL drought resistance and salt tolerance gene

Номер: CN103215276A
Автор: Han Bo, Yang Peizhi, Hu Tianming, Yu Chengqun, Zhang Pan, Wang Weidong, Zhang Zhiqiang, Cao Yuman, Yang Weizi
Принадлежит:

The invention discloses a medicago sativaL drought resistance and salt tolerance gene, which has an amino acid nucleotide sequence represented by SEQ ID NO.1 in the sequence table. After the gene is transformed into medicago sativaL, drought resistance and salt tolerance of the medicago sativaL can be increased, and the strong stress resistance medicago sativaL variety can be rapidly bred with a genetic engineering manner. The strong stress resistance medicago sativaL variety can be obtained by adopting the following process: 1, linking the gene and a plant expression vector pCAMBIA1301 by using T4 ligase to construct a plant expression vector; 2, transforming vector expression plasmid into Agrobacterium tumefaciens GV3101, adopting a leaf disc method to infect tobacco leaves, and adopting hygromycin to screen resistant plants; and 3, transplanting the obtained plants into soil, and observing growth states and phenotypes of the plants.

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Номер записи: 7
10-10-2012 дата публикации

Chemical preparation technology of Cu(InAl)Se2 film

Номер: CN102723399A
Автор: Yang Peizhi, Zi Xingfa, Yang Wen, An Jiacai, Zhu Xunmeng
Принадлежит:

The invention relates to a chemical preparation technology of a Cu(InAl)Se2 film. The technology is a preparation method of chemical deposition. The method is characterized by: taking soda-lime glass as a substrate; firstly, using a radio frequency (RF) magnetron sputtering method to sputter molybdenum (Mo) metal so as to make a back electrode on the substrate; then, using a chemical bath deposition (CBD) method to deposit a CIAS film on the Mo back electrode. Through using the CBD method to prepare the CIAS film, material consumption is small; expensive vacuum equipment is not needed; a toxic gas does not need to be processed and the large area deposition can be realized. A forbidden band width of the prepared CIAS film is 1.44eV, which is an optimal band gap of a single-junction solar cell. And a luminous absorption coefficient is greater than 10<6>cm<-1>.

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Номер записи: 8
15-08-2012 дата публикации

Chemical preparation technology for solar cell light absorption layer Cu2O nano film

Номер: CN102637777A
Автор: Yang Peizhi, Zi Xingfa, Yang Wen, Peng Liujun, Deng Shuang, Hua Qilin, Leng Tianjiu
Принадлежит:

The invention provides a chemical preparation technology for a solar cell light absorption layer Cu2O nano film, which belonging to the technical field of the photovoltaic cell. The nanoscale Cu2O is prepared by the electrochemical deposition preparation technology, the average diffusion time of the photon-generated carrier of the nanoscale Cu2O is shortened to be 1/102-1/106, and the compound probability is greatly reduced so as to improve the use ratio of the sunlight. The technical means of the chemical preparation technology comprises specific steps of: A) preparing a precursor by an RF (radio frequency) magnetron sputtering deposition zinc oxide (ZnO) layer; B) carrying out electrochemical deposition on a cuprous oxide (Cu2O) film; and C) annealing a cuprous oxide (Cu2O) film sample.

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Номер записи: 9
23-10-2013 дата публикации

Preparation method of oxygen and chlorine co-doped graphene quantum dots

Номер: CN103359727A
Автор: Li Xueming, Tang Libin, Yang Wen, Yang Peizhi
Принадлежит:

The invention discloses a preparation method of oxygen and chlorine co-doped graphene quantum dots, and relates to hydro-thermal preparation technology of the oxygen and chlorine co-doped graphene quantum dots. The hydro-thermal preparation technology of the oxygen and chlorine co-doped graphene quantum dots is characterized in that: under hydro-thermal conditions and hydrochloric acid catalysis conditions, a saccharide is used as a carbon source and an oxygen doping source, hydrochloric acid is used as a chlorine doping source, and water-soluble oxygen and chlorine co-doped graphene quantum dots are produced by water molecule-eliminating polymerization of saccharide molecules and the hydrochloric acid. The hydro-thermal preparation technology relates to simultaneous introduction of elements of oxygen and chlorine into the graphene quantum dots, so that electron transition effective energy levels in the graphene quantum dots can be increased, and furthermore the prepared oxygen and chlorine ...

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Номер записи: 10
18-07-2012 дата публикации

Full liquid phase hydrogenation method of coal tar

Номер: CN102585899A
Автор: Li Dapeng, Li Genzhong, Yang Peizhi, Li Daiyu, Yan Hua
Принадлежит:

The invention discloses a full liquid phase hydrogenation method of coal tar, which is characterized by comprising the following steps that coal tar raw materials respectively perform full liquid phase pre-hydrogenation reaction and full liquid phase main hydrogenation reaction, and main hydrogenation generated oil respectively generates naphtha products, diesel products and tail oil products through oil gas-liquid separation and distillation. The full liquid phase hydrogenation method enables the coal tar to perform the pre-hydrogenation reaction and the main hydrogenation reaction under the full liquid phase. The method can be suitable for hydrogenation modification of full fraction coal tar of any one or more of high-temperature coal tar, middle-temperature coal tar and low-temperature coal tar. During hydrogenation, coking can be effectively inhibited, reaction heat is controlled, energy loss is reduced, long-period running of a coal tar hydrogenation device is achieved, hydrogen consumption ...

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Номер записи: 11
10-04-2013 дата публикации

Preparation method of alumina solar cell antireflection coating

Номер: CN103035783A
Автор: Yang Wen, Duan Liangfei, Yang Peizhi, Zhang Liyuan, Zi Xingfa, Leng Tianjiu
Принадлежит:

The invention provides a preparation method of an alumina solar cell antireflection coating. Monocrystalline silicon Si (100 crystal phases) is taken as a substrate, and sputtered Al is oxidized in a chamber to obtain an Al2O3 antireflection coating with high refractivity and low absorptivity by controlling O2 partial pressure and chamber pressure intensity through using a magnetron sputtering technology. Through regulation and control of oxygen ratio, the Al2O3 antireflection coating is prepared through direct sputtering at a room temperature, energy consumption is low, and energy conservation and emission reduction are facilitated. The prepared Al2O3 coating has the wavelength of 300 nm to 1,100 nm, transmittance of 85% to 92% and refractivity of 1.57 to 1.76.

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Номер записи: 12
15-08-2012 дата публикации

Method for preparing amorphous silicon thin-film solar battery with nip structure

Номер: CN102637781A
Автор: Yang Peizhi, Zhuang Chunquan, Chu Junhao
Принадлежит:

The invention discloses a method for preparing a silicon-based thin-film battery with a nip structure by using box type plasma enhanced chemical vapor deposition equipment, which relates to the field of vacuum coating methods and mainly solves the problem that an intrinsic i layer is influenced by residual phosphorus because doped phosphorus can not be thoroughly flushed in a technical method for preparing a battery with a nip structure. The method for preparing an amorphous silicon thin-film solar battery with a nip structure is characterized in that: three adjacent exciting electrodes are used as a group; the exciting electrode in the middle is used for preparing n, i and p layers in sequence, and after the n layer is prepared, the exciting electrode stops working; the two exciting electrodes adjacent to the exciting electrode in the middle turn on radio-frequency signals to generate a plasma filed to clean a plasma box; and after cleaning, the exciting electrode in the middle gets back ...

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Номер записи: 13
18-07-2012 дата публикации

Composite terylene calandria for storage battery

Номер: CN102593465A
Автор: Zhang Fugui, Tian Rongchun, Yang Peizhi
Принадлежит:

The invention relates to the technical field of a composite terylene calandria for a storage battery, which is applicable to lead-acid battery electrode plate manufacture. The composite terylene calandria comprises the following process steps of (1) enabling polyester fiber cloth and non-woven polyester fiber cloth to manufacture and composite integral polyester fiber composite cloth by using heat seal, bonding, seaming, ultrasonic machining and the like; (2) enabling two pieces of polyester fiber composite cloth to be manufactured into calandria cloth through the heat seal, the bonding, the seaming and the ultrasonic machining; and (3) enabling the calandria cloth to conduct resin impregnation and clearing, and manufacturing and processing to be a row-pen-shaped tubular bag connected to be integral on different molding borers after passing through solidification molding equipment. The composite terylene calandria has high tension fracture and spalling strength, has the advantages of being ...

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Номер записи: 14
15-08-2012 дата публикации

Method for preparing amorphous silicon germanium thin-film batteries with box type PECVD (plasma enhanced chemical vapor deposition) equipment

Номер: CN102634774A
Автор: Yang Peizhi, Zhuang Chunquan, Chu Junhao, Yang Wen, Mo Jinghui, Liu Liming
Принадлежит:

The invention solves the problem that during the process of preparing amorphous silicon germanium thin-film battery components, the germanium content on a glass substrate of a prepared amorphous silicon germanium thin film is not due to different decomposition speeds and decomposition amounts of gas on the upper end and the lower end of the substrate, which affects the performance of the battery components, and provides an equipment for preparing amorphous silicon germanium thin-film batteries and a preparation method of the equipment. The equipment solves the problem of non-uniform germanium content on the upper and the lower parts of the glass substrate in a manner of gas compensation through design modification of the structure of partial electrodes generating a plasma field, and achieves low-cost and easily implemented preparation of large-area amorphous silicon germanium thin films and amorphous silicon-germanium thin-film batteries with uniform component content by using a box type ...

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Номер записи: 15
01-05-2013 дата публикации

Immunonutrition block for yaks

Номер: CN103070299A
Автор: Wu Hongxin, Hutianming, Alamusi, Liu Yaxue, Yang Peizhi
Принадлежит:

The invention discloses an immunonutrition block for yaks. The immunonutrition block for yaks comprises 15wt% of urea, 25wt% of molasses, 8wt% of chicory inulin, 1.5wt% of lespedeza hedysaroides crude flavonoid, 20wt% of salt, 14wt% of whole herb powder of lespedeza bicolor, 15wt% of bentonite, and 1.5wt% of a microelement mixture. According to the invention, based on the balanced nutrition, the cold resistance of the yaks is improved by utilization of chicory inulin and lespedeza hedysaroides crude flavonoid. The immunonutrition block for yaks is especially suitable for supplementary feeding in cold seasons and seasons of withered grass in the severe biological environment of Tibet Plateau and reduces the weight loss of yaks in cold seasons and a spring death rate.

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Номер записи: 16
25-07-2012 дата публикации

Preparation method of polycrystal Si films through Ge low-temperature induced crystallization

Номер: CN102605337A
Автор: Deng Shukang, Kang Kunyong, Sun Qili, Shen Lanxian, Hao Ruiting, Yang Peizhi, Li Ming
Принадлежит:

The invention relates to a preparation method of polycrystal Si films through Ge low-temperature induced crystallization and belongs to the field of semiconductor film materials. The method is implemented by adopting the following steps that: A), a layer of 200 to 500nm Ge filling and burying layer grows on a substrate at 30 DEG C to 500 DEG C; B), an amorphous Si layer grows on the Ge filling and burying layer at 30 DEG C to 500 DEG C; C) the amorphous Si films with the Ge filling and burying layer are sealed in a quartz glass tube at the vacuum degree being 1*10<-2> to 9*10<-2>Pa, the quartz glass tube is placed in a muffle furnace to be subjected to annealing for at least 2 hours at 600 DEG C, and the polycrystal Si films can be obtained. The polycrystal Si films are prepared at low temperature, the process is simple, and the method belongs to the crystallization method practically used for large-scale industrial production of polycrystal Si film materials.

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Номер записи: 17
15-08-2012 дата публикации

Polar plate bag for storage battery

Номер: CN102637842A
Автор: Zhang Fugui, Tian Rongchun, Yang Peizhi
Принадлежит:

The invention relates to the technical field of a polar plate bag for a storage battery. The polar plate bag has a bag-shaped structure formed by connecting two composite cloths together through a combining seam. A preparation process of the polar plate bag comprises the following steps of: performing resin finishing on a composite grey cloth made from a polyester fiber material by adding a resin solution in a resin finishing machine; processing the composite gray cloth into a polar plate bag semi-finished product through the combining seam; and performing processing and high-temperature molding on the polar plate bag semi-finished product on a die through a heat-setting machine, and performing cutting, hot cutting and sewing according to a standard size to obtain the polar plate bag. The polar plate bag has higher expanding and splitting strength and lower resistance, and can effectively protect active substances of a polar plate from falling off; and the resistance is low and is below ...

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Номер записи: 18
04-07-2012 дата публикации

Culture method for increasing number and activity of alfalfa root nodules

Номер: CN102523787A
Автор: Yang Peizhi, Wang Weidong, Zhang Pan, Hu Tianming, Miao Yanjun, Zhang Zhiqiang
Принадлежит:

The invention discloses a culture method for increasing the number and activity of alfalfa root nodules. The culture method includes the following steps: after being disinfected, alfalfa seeds are placed into a culture dish with a piece of filter paper, and are germinated for 3 to 4 days in an illuminating incubator, the seedlings are then transplanted into a culture bowl filled up with quartz sand, rhizobia are inoculated during transplantation, nutrient solution is poured in the culture bowl, rhizobia are inoculated once again when the seedlings are grown to about 10cm, the nitrogen concentration of the nutrient solution is then decreased to less than 5mM, the nutrient solution is poured for one day, and water is poured for another day. The culture method can greatly increase the activity of alfalfa root nodules and the number of rhizobia and sufficiently exert the effect of root nodules in the growth of alfalfa, thus increasing the yield of alfalfa and improving the quality of alfalfa ...

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Номер записи: 19