10-11-2022 дата публикации
Номер: US20220359749A1
Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon. 1. A semiconductor device comprising:a semiconductor substrate including monocrystalline silicon or polycrystalline silicon;a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed;a channel layer provided in the local region of the first insulating layer;a silicide provided on one side surface of the channel layer;a control gate provided on the channel layer;a gate insulating film provided between the channel layer and the control gate; anda polarity control gate arranged so as to overlap an interface between the channel layer and the silicide,wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.2. The semiconductor device of claim 1 ,wherein the first insulating layer further includes a hole,wherein the hole is arranged spaced apart from the local region.3. The semiconductor device of claim 1 ,wherein the first insulating layer further includes a hole,wherein the hole is contiguous to the local region.4. The semiconductor ...
Подробнее