26-05-2016 дата публикации
Номер: US20160149073A1
A method of fabricating a light-emitting diode includes: proving a substrate; forming an N-type layer, a low-temperature AlInGaN (0≦x≦1, 0≦y≦1, x and y cannot both be zero at the same time) layer, a multiple quantum-well active region, an AlGaN (0≦z≦1) electron blocking layer, an AlInGaN (0≦x≦1, 0≦y≦1) separation layer and a P-type layer over the substrate in successive; before growth of the multiple quantum-well active region, growing a low-temperature AlInGaN layer to form a “V”-shaped indentation or pit; after growth of the multiple quantum-well active region, growing a thin AlGaN electron blocking layer and then a separation layer under two-dimensional growth mode to form holes between the active region and the P-type layer to separate throughout dislocation within the V pit coverage range and contact with the P-type layer, thus eliminating current leakage and improving inverse current leakage capacity and anti-static capacity of the epitaxial wafer. 1. A method of fabricating a light-emitting diode (LED) , comprising:providing a substrate;{'sub': x', 'y', '1−x−y', 'z', '1−z', 'x', 'y', '1−x−y, 'growing over the substrate sequentially an N-type layer, a low-temperature AlInGaN (0≦x≦1, 0≦y≦1, wherein x and y are not both be zero at the same time) layer, a multiple quantum-well active region, an AlGaN (0≦z≦1) electron blocking layer, and an AlInGaN (0≦x≦1, 0≦y≦1) separation layer;'}{'sub': x', 'y', '1−x−y', 'z', '1−z, 'wherein the low-temperature AlInGaN layer and the multiple quantum-well active region form a “V”-shaped indentation, and the AlGaN electron blocking layer grown latter is embedded in but not filled up the “V”-shaped indentaion;'}growing a separation layer in a two-dimensional growth mode to form holes between the multiple quantum-well active region and the separation layer to obtain an epitaxial wafer of the LED.2. The method of claim 1 , wherein the “V”-shaped indentation is formed through lattice mismatch between the AlInGaN (0≦x≦1 claim 1 , 0≦y≦1 ...
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