Coarsening structure, coarsening surface and coarsening layer of optoelectronic element and manufacturing method of optoelectronic element

The invention provides a coarsening structure, a coarsening surface and a coarsening layer of an optoelectronic element and a manufacturing method of the optoelectronic element. The optoelectronic element with double-scale coarsening structures is characterized in that: impurities are doped in an extension process of a semiconductor of the optoelectronic element to allow the semiconductor to growa plurality of island bodies; subsequently, the extension temperature is lowered so as to continuously form a plurality of pin holes on the plurality of island bodies, wherein the pin holes are distributed on the top parts and side faces of the island bodies, so the total internal reflectivity of rays in the optoelectronic element is greatly reduced and the light intensity performance of the optoelectronic element is enhanced. Compared with the conventional art, the process of the invention has the advantages of low pollution, simple process, low cost, better light extraction efficiency, bigger ...

Semiconductor component and method for manufacturing the same

The manufacture of semiconductor element includes at least the following steps: adopting one temporary substrate, forming the element structure on the temporary substrate, separating the substrate into independent element chips physically or chemically, jointing the face-down independent element chip onto a permanent substrate, peeling off the temporary substrate and subsequent element manufacturing steps, if necessary.

Light source in warm color

The invention discloses a warm color light source which adjusts the color temperature of a normal white color light-emitting diode to about 2,500K by a light-emitting diode with wavelength of 550-600 nanometers; luminous intensity added by the light-emitting diode can effectively reduce the color temperature. The two light-emitting diodes can be encased together in one shell or encased separately in the respective shells.

High-brightness LED unit and its making method

The invention relates to light emitting diode with high brightness and its producing method, in particular a light emitting diode of indium gallium aluminium phosphide with selective high adulteration and low resistance layer that can be grown up by utilizing existing multi-crystal technique. So the light emitting diode in volume-produce can be carried on, it has the value on industry.

Method for bonding two materials

The invention provides a method for bonding two materials. In the method, high heat can be produced quickly by means of a high-magnetic permeability material by utilizing a radio frequency heating method, so that the two materials are bonded because a bonding medium reaches a linkage temperature. The method comprises the following steps: forming a high-magnetic permeability metal layer on a first material layer; forming a metal medium layer on the high-magnetic permeability metal layer; and making the metal medium layer contact with a second material layer and heating the high-magnetic permeability metal layer by utilizing the radio frequency heating method to heat the metal medium layer to the linkage temperature so as to bond the metal medium layer with the second material layer. The bonding method of the invention has the advantages of preventing stress produced in the thermal expansion and cold shrinkage of a semiconductor material from causing the defects of crack, warpage, poor physical ...

Method for bonding two materials

The invention provides a method for bonding two materials. In the method, high heat can be produced quickly by means of a high-magnetic permeability material by utilizing a radio frequency heating method, so that the two materials are bonded because a bonding medium reaches a linkage temperature. The method comprises the following steps: forming a high-magnetic permeability metal layer on a first material layer; forming a medium bonding metal layer on the high-magnetic permeability metal layer; and making the medium bonding metal layer contact with a second material layer and heating the high-magnetic permeability metal layer by utilizing the radio frequency heating method to heat the medium bonding metal layer to the linkage temperature so as to bond the medium bonding metal layer with the second material layer. The bonding method of the invention has the advantages of preventing stress produced in the thermal expansion and cold shrinkage of a semiconductor material from causing the defects ...

Encapsulation structure of integrated circuit element and method for manufacturing same

The invention discloses an encapsulation structure of an integrated circuit element and a method for manufacturing same. The encapsulation structure comprises a copper foil substrate, an integrated circuit element, a plurality of metal wires and a glue-sealing material. The copper foil substrate comprises an IC jointing area, a plurality of conductive areas and an insulated dielectric material, wherein the integrated circuit element is fixed on the surface of the IC jointing area and is electrically connected with a plurality of conductive areas by the metal wires; the insulated dielectric material is arranged between the IC jointing area and the conductive area and between the two adjacent conductive areas. Furthermore, the glue-sealing material covers the IC jointing area, a plurality of conductive areas and the integrated circuit element. The structure and the method replace the ceramic substrate with the copper foil substrate so as to achieve the object of thinner encapsulation structure ...

Lateral cooling LED (Light-Emitting Diode) and manufacture method thereof

The invention discloses a lateral cooling LED (Light-Emitting Diode) and a manufacture method thereof. The LED comprises a substrate, an N-type conducting semiconductor layer, a luminous layer, a P-type conducting semiconductor layer and a cooling layer. The N-type conducting semiconductor layer is arranged on the substrate, the luminous layer is arranged on the N-type conducting semiconductor layer, the P-type conducting semiconductor layer is arranged on the luminous layer, and the N-type conducting semiconductor layer is connected to an encapsulating carrier by the cooling layer. In the invention, heat energy is conducted out of the LED by utilizing a metal layer with patterns and a lateral cooling layer to increase the heat energy dispersion speed of the LED and improve the luminous efficiency of the LED.

Semiconductor photoelectric element capable of improving light extraction efficiency and method for manufacturing same

The invention provides a semiconductor photoelectric element capable of improving light extraction efficiency and a method for manufacturing the same. The photoelectric element comprises a basal plate, an illumination area and at least one protruding structure, wherein the protruding structure is positioned on an element-cutting platform and around the illumination area, and a groove is formed between the protruding structure and the illumination area; and the illumination area comprises an n type break-over layer positioned on the basal plate, an illumination layer positioned on the n type break-over layer and a p type break-over layer positioned on the illumination layer. Due to the adoption of the structure, light beams can be directly emitted outward along the direction of the p type break-over layer, or emitted outward from the protruding structure due to reflection or refraction of the light beams in the element; and because the protruding structure is positioned around the illumination ...

Semiconductor photoelectric element structure of inverted chip type and making method thereof

The invention relates to a semiconductor photoelectric element structure of an inverted chip type and a making method thereof. The making method comprises the following steps of: firstly, forming a sacrifice layer on an extensive substrate; forming a semiconductor luminous structure on the sacrifice layer; etching the semiconductor luminous structure; fixing a semiconductor photoelectric bare chip on the encapsulated substrate in the inverted chip mode, and then separating the extensive substrate by using a lift-off technology. The making method of the semiconductor photoelectric element structure of the inverted chip type has simple process, and the semiconductor photoelectric element made by using the making method has high luminous efficiency and good heat dispersion.

Method for manufacturing photoelectricity semiconductor element of semiconductor containing P-type three-tribe nitrogen compound

A manufacturing method of a photoelectric semiconductor element containing a P-type group III nitride semiconductor comprises allowing a reacting gas containing a P-type dopant to grow on a substrate to obtain a group III nitride semiconductor; reducing the temperature in a reaction chamber to 700-850 DEG C, introducing nitrogen gas or an inert gas to discharge ammonia and hydrogen out of the reaction chamber, and reducing the pressure in the reaction chamber to 20-80 KPa; keeping for a sufficient time until the residual ammonia and hydrogen are completely discharged, reducing the temperature in the reaction chamber to room temperature, and taking out the substrate.

Lighter with multiple light sources

The present invention aims at providing one new kind of light source capable of generating light with wavelength dissimilar to that of the lighting element. The lighter includes concave cap as bearing base, lighting element on the concave cap and as the first light source, molded member to coat the first lighting element and fluorescent structure to form the second lighting source. The fluorescent structure is made of mixture comprising organic matter and inorganic matter and absorbs the primary light from the lighting element of the first wavelength to form the secondary light source of the second wavelength.

Combined luminous element of electronic barrier layer

The invention discloses a combined luminous element of an electronic barrier layer, which can be provided with an active luminous layer, an n-type gallium nitride layer, a p-type gallium nitride layer, and two III-V semiconductor layers with different energy gaps, wherein the semiconductor layers are periodically and repeatedly deposited on the active luminous layer as the electronic barrier layerwith higher potential barrier to obstruct excessive electronic active luminous layers. The combined luminous element can realize obstruction of electronic overflow through the electronic barrier layer to increase the composite probability of electrons and holes in the active luminous layer and discharge photons, and provides stress compensation through the combination of the III-V semiconductor layers with different crystal lattice sizes to reduce the accumulation of stress between the luminous element and the active luminous layer.

Semiconductor photoelectric element capable of improving light removal rate and manufacturing method thereof

The invention provides a semiconductor photoelectric element capable of improving a light removal rate. The semiconductor photoelectric element comprises a substrate, a first light emitting region and a second light emitting region, wherein the first light emitting region and the second light emitting region comprise an n-type conducting layer positioned on the substrate, a light emitting layer positioned on the n-type conducting layer, a p-type conducting layer positioned on the light emitting layer and a transparent conducting layer positioned on the p-type conducting layer; the second light emitting region comprises a plurality of holes and surrounds the periphery of the first light emitting region; and the periphery of a main light emitting region (the first light emitting region) of a light emitting diode provides a sub-light emitting region (the second light emitting region). Besides increasing the light removal rate of the main light emitting region, the sub-light emitting region ...

Encapsulation body of LED

The invention relates to a light emitting diode package, which comprises a shell body with an opening; a first substrate and a second structure, which are positioned inside the shell body, wherein the height of the first substrate is lower than that of the second substrate; a first light emitting diode fixedly connected on the first substrate for emitting a light beam with a first wavelength; and a second light emitting diode fixedly connected on the second substrate for emitting a light beam with a second wavelength, which is different from the first wavelength. The inventive light emitting diode package uses a light beam formed after mixing a long-wavelength light emitting diode, a short-wavelength light emitting diode and fluorescent powder as a backlight source of a display panel. The short-wavelength light emitting diode can be separated from the long-wavelength light emitting diode, so as to prevent absorption between the two light emitting diodes, thereby improving the light emitting ...

Multi-wavelength light-emitting diode and production method thereof

The invention adopts the processes of growing at least a wavelength conversion material on the surface of a light-emitting component, converting part of light from the light-emitting component into at least one light with different wavelength and mixing the light with different wavelength with the light which comes from the light-emitting component but is not converted to finally obtain the required light source of a CIE coordinate. The whole process of the wavelength conversion material layer formed in the invention can be completed in an epitaxial reactor, without additional yellow photolithography process, thus reducing the probability of pollution of epitaxial wafers. In addition, compared with many light-emitting components in the prior art, the light-emitting component in the invention is characterized in that the p-n junction position can not be changed and the light-emitting efficiency can be retained. Furthermore, the wavelength conversion material is a compound semiconductor and ...

Method for spearing two materials

The invention discloses a separating method. The method comprises the following steps: forming a high magnetic conduction metal array between a base plate and a semiconductor layer; the steps comprising: forming the high magnetic conduction metal array on the base plate; and growing the semiconductor layer through the base plate between a plurality of high magnetic conduction metal blocks, and covering the high magnetic conduction metal array by the semiconductor layer; wherein high magnetic conduction metal array comprises a plurality of blocks; and using a radio frequency to heat the high magnetic conduction metal array to generate high temperature for separating the base plate and the semiconductor layer. When the high magnetic conduction matter array arranged between the two raw material interfaces is disconnected, the Radio Frequency Heating method is carried out on the high magnetic conduction matter to generate high temperature to separate two materials from each other.

Encapsulation body of LED

The invention relates to a light emitting diode package, which comprises a shell body with an opening; a first substrate and a second structure, which are positioned inside the shell body, wherein theheight of the first substrate is lower than that of the second substrate; a first light emitting diode fixedly connected on the first substrate for emitting a light beam with a first wavelength; anda second light emitting diode fixedly connected on the second substrate for emitting a light beam with a second wavelength, which is different from the first wavelength. The inventive light emitting diode package uses a light beam formed after mixing a long-wavelength light emitting diode, a short-wavelength light emitting diode and fluorescent powder as a backlight source of a display panel. Theshort-wavelength light emitting diode can be separated from the long-wavelength light emitting diode, so as to prevent absorption between the two light emitting diodes, thereby improving the light emitting ...

Sided luminescent assembly

The side lighting unit consists of a crust coating photogenic module and a static discharging safer module. The jointing base plates of the photogenic module and the static discharging safer module set in different layers and the division surface between the two layers has two switches. The base of the crust has inclined plane and induced circular bead. The output beam of the crust has one or more induced circular bead and elevation angle on both sides of the crust.

High-brightness LED unit and its making method

Substrate structuring body removing method

The invention relates to a method for removing a substrate structuring body, comprising the following steps of: making a plurality of columns on the substrate in a lithographic and etching mode; growing III-nitride semiconductor element layers on the columns; forming a metal mirror surface layer on the III-nitride semiconductor element layers; forming a conductive material layer on the metal mirror surface layer; and etching the plurality of columns in a chemical etching mode so as to separate the III-nitride semiconductor element layers from the substrate, thereby obtaining a vertical light emitting component. Gaps between the plurality of columns can greatly increase the etching reaction area, enhance the efficiency of etching to separate the semiconductor layers from the substrate and reduce the cost in the manufacturing method.

Light emitting diode and manufacturing method thereof

The invention provides an LED and a manufacturing method thereof; the LED comprises a substrate provided with a first surface and a second surface, a luminous epitaxial structure on the first surface of the substrate, and a compound reflecting layer on the second surface of the substrate; wherein, the second surface is provided with a protection segment. The invention can improve the LED quality and the yield rate; the protection segment formed on the substrate of the LED and at one side opposite to the epitaxial structure so as to prevent the LED against the problems caused by the soldering tin entering among the compound reflecting mental layers at the stage of eutectic bonding.

Method for blocking dislocation defects of semiconductor

The invention provides a method for blocking dislocation defects of a semiconductor. The method comprises the following steps: firstly, extending a semiconductor layer on a substrate, and etching pits on structure weak positions caused by the dislocation defects on the semiconductor layer; then, forming a blocking layer on each pit; and finally, extending the semiconductor layer again to ensure that the semiconductor layer grows laterally to result in direction change of the dislocation defect. The method can reduce the density of dislocation defect in the extending process so as to improve the optical characteristic of an extending layer.

Warm color light source

The invention discloses a warm color light source. A light emitting diode (LED) with the wavelength between 550 nanometers and 600 nanometers is used. The color temperature of an ordinary white color LED is adjusted to about 2500K, and the illumination intensity of the LED is increased to decrease the color temperature effectively. According to an encapsulating body of the warm color light source of the invention, two LEDs can be encapsulated into one housing or be encapsulated into different housings respectively.

Sided luminescent assembly

Semiconductor component and method for manufacturing the same

Method for separating semiconductor and base plate thereof

The invention provides a method for separating a semiconductor and a base plate thereof, which mainly aim to form a plurality of columns on a base plate and grow semiconductor layers on the columns in an epitaxial way so as to separate the semiconductor layers and the base plate thereof by filling etching solution in clearances among the columns. Because the clearances among the columns can greatly increase etching reaction area, the method can strength the etching efficiency for separating the semiconductor layers and the base plate and can reduce technology cost, and the used base plate material is not limited by the method.

Light-emitting diode and manufacturing method thereof

The invention provides a light-emitting diode and a process thereof. The light-emitting diode comprises a metal reflecting layer so as to improve the reflection efficiency of light in the light-emitting diode and simultaneously reduce resistance and power loss. Besides, a buffer layer is arranged between the metal reflecting layer and a semiconductor, and has a mixed structure of metal and a nonmetal transparent medium so as to reduce the stress between the semiconductor and the metal and decrease the possibility of grain collapse.

Coarsening structure, coarsening surface and coarsening layer of optoelectronic element and manufacturing method of optoelectronic element

The invention provides a coarsening structure, a coarsening surface and a coarsening layer of an optoelectronic element and a manufacturing method of the optoelectronic element. The optoelectronic element with double-scale coarsening structures is characterized in that: impurities are doped in an extension process of a semiconductor of the optoelectronic element to allow the semiconductor to growa plurality of island bodies; subsequently, the extension temperature is lowered so as to continuously form a plurality of pin holes on the plurality of island bodies, wherein the pin holes are distributed on the top parts and side faces of the island bodies, so the total internal reflectivity of rays in the optoelectronic element is greatly reduced and the light intensity performance of the optoelectronic element is enhanced. Compared with the conventional art, the process of the invention has the advantages of low pollution, simple process, low cost, better light extraction efficiency, bigger ...

Method for manufacturing semiconductor component and structure thereof

The invention discloses a method for manufacturing a semiconductor component and a structure thereof. The method comprises the steps of: providing a buffer layer; forming a first semiconductor layer on the surface of the buffer layer; then forming a first implantation layer on the surface of the first semiconductor layer by utilizing a high-concentration doped substance mode during the epitaxy; then covering a second semiconductor layer on the surface of the first implantation layer; and finally growing a semiconductor luminous element on the second semiconductor layer, wherein the formation of the first implantation layer and the covering of the second semiconductor layer are a group of programs. The method can reduce the dislocation defect inside the component by utilizing the implantation layer formed in the high-concentration doped substance mode during an epitaxial process.

Method for manufacturing light-emitting component of three-group nitrogen compound and structure thereof

A method for manufacturing a light-emitting component of a three-group nitrogen compound comprises the following steps: growing a first three-group nitrogen compound semiconductor layer on the surface of an original substrate; forming an epitaxial block layer on the first three-group nitrogen compound semiconductor layer; growing a second three-group nitrogen compound semiconductor layer on the epitaxial block layer and an uncovered first three-group nitrogen compound semiconductor layer; removing the epitaxial block layer; growing a third three-group nitrogen compound semiconductor layer on the second three-group nitrogen compound semiconductor layer; depositing a conductive material layer on the third three-group nitrogen compound semiconductor layer; and separating the third three-group nitrogen compound semiconductor layer and a structure thereon from the second three-group nitrogen compound semiconductor layer.

Group III nitride compound semiconductor LED and production method thereof

The invention provides a three-group nitrogen-compound semiconductor LED, which comprises a substrate, a buffer layer, an N-type semiconductor material layer, conformation active layers and a P-type semiconductor material layer, wherein the N-type semiconductor material layer has a first surface and a second surface; the first surface is in direct contact with the buffer layer; the second surface has a plurality of concave parts; the conformation active layers are formed on the second surface and in the concave parts; and the stress between the conformation active layers and the N-type semiconductor material layer can be released through the concave parts.

Method for separating semiconductor and base plate thereof

The invention provides a method for separating a semiconductor and a base plate thereof, which mainly aim to form a plurality of columns on a base plate and grow semiconductor layers on the columns inan epitaxial way so as to separate the semiconductor layers and the base plate thereof by filling etching solution in clearances among the columns. Because the clearances among the columns can greatly increase etching reaction area, the method can strength the etching efficiency for separating the semiconductor layers and the base plate and can reduce technology cost, and the used base plate material is not limited by the method.

III-nitrogen compound semiconductor luminous element and preparation method thereof

The invention relates to a III-nitrogen compound semiconductor luminous element and a preparation method thereof. The method comprises the following steps of: growing a first III-nitrogen compound semiconductor layer on the surface of a temporary substrate; patterning the first III-nitrogen compound semiconductor layer through the photoetching technology; forming a second III-nitrogen compound semiconductor layer on the patterned first III-nitrogen compound semiconductor layer; forming a conducting material layer on the second III-nitrogen compound semiconductor layer; and obtaining the conducting material layer and a combined body of the conducting material layer by separating the conducting material layer from the first III-nitrogen compound semiconductor layer. The invention provides a substrate separation technology ensuring the quality stability and quantified production.

Method for spearing two materials

The invention discloses a separating method. The method comprises the following steps of: forming a high magnetic conduction metal array between a base plate and a semiconductor layer; using radio frequency to heat the high magnetic conduction metal array to generate high temperature for separating the base plate and the semiconductor layer. When the two originally combined materials are disconnected, the high magnetic conduction material array between two material interfaces is used, the Radio Frequency Heating method is carried out on the high magnetic conduction matter to generate high temperature to separate two materials from each other.

Semiconductor element for emitting radiation and method for reducing operation voltage of same

The invention provides a semiconductor element for emitting radiation and a method for reducing operation voltage of the same. The semiconductor element comprises an active layer used for generating radiation, a rho type conducting layer, a transparent conducting layer and a non-rho type ohmic contact layer, wherein the rho type conducting layer is formed on the active layer; the non-rho type ohmic contact layer is arranged between the rho type conducting layer and the transparent conducting layer; and the non-rho type ohmic contact layer is used for reducing the operation voltage of the semiconductor element for emitting the radiation. In addition, the non-rho type ohmic contact layer is AlxCayIn[(1-x-y)]N quaternary alloy, and a component of aluminum contained in the quaternary alloy ensures that the energy gap of the non-rho type ohmic contact layer is larger than that of the active layer so as to reduce the light absorption effect of the non-rho type ohmic contact layer and achieve ...

Group III nitride compound semiconductor LED and method for manufacturing the same

The invention discloses a trivalent nitrogen compound semiconductor light emitting diode and a method for manufacturing the same comprising a substrate, a first trivalent nitrogen compound layer and a second trivalent nitrogen compound layer. The substrate contains a first surface and a plurality of convex sections protrudably extending the first surface and the first surface surrounds each of the convex sections. The first trivalent compound coats the top surfaces of the convex sections and connects each other from the plurality of top surfaces to a side direction. The second trivalent nitrogen compound coats the first surface with a thickness less than the height of the convex section. The material of the second trivalent nitrogen compound is the same as that of the first trivalent nitrogen compound, and the the second trivalent nitrogen compound and the first trivalent nitrogen compound are not contact with each other. The light emitting diode of the invention has better light-emitting ...

Light-emitting diode and manufacturing method thereof

The invention provides a light-emitting diode and a manufacturing method thereof. The light-emitting diode comprises a substrate, an N-type conductive semiconductor layer, a P-type conductive semiconductor layer, an active region and a strain-compensating layer, wherein the strain-compensating layer is positioned between the N-type conductive semiconductor layer and the active region to increase compound probability of an electron and a hole.

Method for manufacturing photoelectricity semiconductor element of semiconductor containing P-type three-tribe nitrogen compound

A manufacturing method of a photoelectric semiconductor element containing a P-type group III nitride semiconductor comprises allowing a reacting gas containing a P-type dopant to grow on a substrate to obtain a group III nitride semiconductor; reducing the temperature in a reaction chamber to 700-850 DEG C, introducing nitrogen gas or an inert gas to discharge ammonia and hydrogen out of the reaction chamber, and reducing the pressure in the reaction chamber to 20-80 kPa; keeping for a sufficient time until the residual ammonia and hydrogen are completely discharged, reducing the temperaturein the reaction chamber to room temperature, and taking out the substrate.

Semiconductor photoelectric element capable of improving light extraction efficiency and method for manufacturing same

The invention provides a semiconductor photoelectric element capable of improving light extraction efficiency and a method for manufacturing the same. The photoelectric element comprises a basal plate, an illumination area and at least one protruding structure, wherein the protruding structure is positioned on an element-cutting platform and around the illumination area, and a groove is formed between the protruding structure and the illumination area; and the illumination area comprises an n type break-over layer positioned on the basal plate, an illumination layer positioned on the n type break-over layer and a p type break-over layer positioned on the illumination layer. Due to the adoption of the structure, light beams can be directly emitted outward along the direction of the p type break-over layer, or emitted outward from the protruding structure due to reflection or refraction of the light beams in the element; and because the protruding structure is positioned around the illumination ...

Welding method of light emitting diode

The invention discloses a welding method of a light emitting diode, which comprises the following steps: molten welding liquid in a welding furnace is driven to generate a weld mark; a light emitting diode is positioned on a circuit board; and then the circuit board fixed with the light emitting diode is transmitted through the upper part of the weld mark, and the welding liquid welds the light emitting diode to the circuit board. The invention reduces the heating temperature and time of the light emitting diode in a welding process, avoids the influence of high temperature on the performance and does not increase the difficulty and the cost of the technology.

Light-emitting diode and manufacturing method thereof

The invention provides a light-emitting diode and a process thereof. The light-emitting diode comprises a metal reflecting layer so as to improve the reflection efficiency of light in the light-emitting diode and simultaneously reduce resistance and power loss. Besides, a buffer layer is arranged between the metal reflecting layer and a semiconductor, and has a mixed structure of metal and a nonmetal transparent medium so as to reduce the stress between the semiconductor and the metal and decrease the possibility of grain collapse.

Semiconductor photoelectric element structure of inverted chip type and making method thereof

The invention relates to a semiconductor photoelectric element structure of an inverted chip type and a making method thereof. The making method comprises the following steps of: firstly, forming a sacrifice layer on an extensive substrate; forming a semiconductor luminous structure on the sacrifice layer; etching the semiconductor luminous structure; fixing a semiconductor photoelectric bare chip on the encapsulated substrate in the inverted chip mode, and then separating the extensive substrate by using a lift-off technology. The making method of the semiconductor photoelectric element structure of the inverted chip type has simple process, and the semiconductor photoelectric element made by using the making method has high luminous efficiency and good heat dispersion.

III-family nitrogen compound semiconductor light-emitting diode

The invention provides a III-family nitrogen compound semiconductor light-emitting diode, which comprises a substrate, a buffer layer, an N-type semiconductor material layer, an active layer and a P-type semiconductor material layer, wherein the active layer comprises at least one quantum well layer, at least two barrier layers clamping the quantum well layer, and at least one stress adjusting layer; the stress adjusting layer is arranged between the quantum well layer and a barrier layer; and III-family nitrogen compound material components of the stress adjusting layer are distributed in a gradient way in the direction from the quantum well layer to the adjacent barrier layers.

Semiconductor component structure and method for manufacturing semiconductor component

The invention provides a semiconductor component structure and a method for manufacturing a semiconductor component. The method for manufacturing a semiconductor component comprises the following steps: supplying a base plate and forming a plurality of grooves on the surface of the base plate in a photoetching or laser engraving way, the grooves divide the surface of the base plate into a plurality of mesa structures and enable the base plate to form a patterned base plate; and growing the semiconductor component (such as a photoelectric component or an LED) on the surface of the patterned base plate. The semiconductor component is provided with at least one film layer, wherein the file layer in contact with the patterned base plate is the first film layer, and the first film layer is divided into a plurality of separated area by the grooves. The invention can solve the problem of poor film layer quality caused by a crystal lattice difference.

LED and polarization reduction interlayer thereof

The invention provides an LED and a polarization reduction interlayer thereof, wherein the polarization reduction interlayer consisting of AlxInyGa (1-x-y) N material is formed between an electron blocking layer and an active layer of the LED, x is bigger than or equal to 0 but smaller than or equal to 1, and y is bigger than or equal to 0 but smaller than or equal to 1. The LED cannot reduce theluminous efficiency.

Photoelectrical semiconductor component with 3-familty Ni compound semiconductor buffer layer and its making method

A photoelectric semiconductor component with three families nitrogen compound semiconductor buffer layers is provided, which comprises a substrate, and at least two InGa<1-x>N layers and at least two InGa<1-y>N layers which superimposes on the substrate alternately, wherein the x not equals to the y. A luminescent epitaxial structure is located on the surface of the InGa<1-y>N layer which is at the upper layer. A superlattice buffer layer is formed by the InGa<1-x>N layer which is between the substrate and the luminescent epitaxial structure and the InGa<1-y>N layer to reduce stress.

Lighter with multiple light sources

Vapor deposition system

The invention provides a vapor deposition system, comprising an ion generating region, a reaction chamber and a perforated pipe positioned between the generating region and the reaction chamber; wherein, the generating region provides plasmas of a first element; the perforated pipe collects and leads the plasmas of the first element and a second element into the reaction chamber; the plasmas of the first element and the second element as well as a substrate are subjected to chemical vapor deposition in the reaction chamber to grow a thin layer.

Surface coarsening gallium nitride light-emitting component and manufacturing method thereof

The invention relates to a surface coarsening gallium nitride light-emitting component and a manufacturing method thereof. The gallium nitride light-emitting component can comprise a substrate, a buffer layer, an n-type third-family nitride semiconductor material layer, a third-family nitride semiconductor light-emitting layer, a first p-type third-family nitride semiconductor material layer, a p-type heavy doping third-family nitride semiconductor material layer, and a second p-type third-family nitride semiconductor coarsened layer. The first p-type third-family nitride semiconductor material layer is grown on the third-family nitride semiconductor light-emitting layer. The p-type heavy doping third-family nitride semiconductor material layer is grown on the first p-type third-family nitride semiconductor material layer. The second p-type third-family nitride semiconductor coarsened layer is grown on the p-type heavy doping third-family nitride semiconductor material layer. The gallium ...

Warm color light source

The invention discloses a warm color light source. A light emitting diode (LED) with the wavelength between 550 nanometers and 600 nanometers is used. The color temperature of an ordinary white color LED is adjusted to about 2500K, and the illumination intensity of the LED is increased to decrease the color temperature effectively. According to an encapsulating body of the warm color light sourceof the invention, two LEDs can be encapsulated into one housing or be encapsulated into different housings respectively.

Substrate structuring body and removing method thereof

The invention relates to a substrate structuring body and a method for removing the substrate structuring body. The method comprises the following steps of: making a plurality of columns on the substrate in a lithographic and etching mode; growing III-nitride semiconductor layers on the columns; and etching a plurality of columns in a chemical etching mode so as to separate the III-nitride semiconductor layers from the substrate. Gaps between the plurality of columns can greatly increase the etching reaction area, enhance the efficiency of etching to separate the semiconductor layers from the substrate and reduce the cost in the manufacturing method.

Lateral cooling LED (Light-Emitting Diode) and manufacture method thereof

The invention discloses a lateral cooling LED (Light-Emitting Diode) and a manufacture method thereof. The LED comprises a substrate, an N-type conducting semiconductor layer, a luminous layer, a P-type conducting semiconductor layer and a cooling layer. The N-type conducting semiconductor layer is arranged on the substrate, the luminous layer is arranged on the N-type conducting semiconductor layer, the P-type conducting semiconductor layer is arranged on the luminous layer, and the N-type conducting semiconductor layer is connected to an encapsulating carrier by the cooling layer. In the invention, heat energy is conducted out of the LED by utilizing a metal layer with patterns and a lateral cooling layer to increase the heat energy dispersion speed of the LED and improve the luminous efficiency of the LED.

Production method of group III nitride compound semiconductor LED

The invention provides a three-group nitrogen-compound semiconductor LED, which comprises a substrate, a buffer layer, an N-type semiconductor material layer, conformation active layers and a P-type semiconductor material layer, wherein the N-type semiconductor material layer has a first surface and a second surface; the first surface is in direct contact with the buffer layer; the second surfacehas a plurality of concave parts; the conformation active layers are formed on the second surface and in the concave parts; and the stress between the conformation active layers and the N-type semiconductor material layer can be released through the concave parts.

Group III nitride compound semiconductor LED and method for manufacturing the same

The invention discloses a trivalent nitrogen compound semiconductor light emitting diode and a method for manufacturing the same comprising a substrate, a first trivalent nitrogen compound layer and a second trivalent nitrogen compound layer. The substrate contains a first surface and a plurality of convex sections protrudably extending the first surface and the first surface surrounds each of the convex sections. The first trivalent compound coats the top surfaces of the convex sections and connects each other from the plurality of top surfaces to a side direction. The second trivalent nitrogen compound coats the first surface with a thickness less than the height of the convex section. The material of the second trivalent nitrogen compound is the same as that of the first trivalent nitrogen compound. The light emitting diode of the invention has better light-emitting efficiency.

High-brightness LED and its manufacture

In the present invention, a nitride-containing semiconductor grown in double-heterojunction Al-In-Ga phosphide structure is used as the window layer of LED. Owing to the energy gap of the nitride greater than that of the active layer and lower than that of gallium phosphide, the nitride is suitable for use as window layer to raise the light efficiency of the LED. In addition, the said semiconductor may be grown in available orientation growth process or organic metal chemical gaseous deposition for scale production.

High-brightness LED and its manufacture