Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 9. Отображено 9.
07-09-2022 дата публикации

A method for manufacturing graphene

Номер: GB0002604377A
Автор: SEBASTIAN DIXON [GB], IVOR GUINEY [GB], JAMES GRIFFITHS [GB], SIMON THOMAS [GB]
Принадлежит:

A method for manufacturing graphene comprises forming graphene on a non-metallic surface of a substrate by chemical vapour deposition (CVD) in a reaction chamber by introducing a precursor in a gas phase or suspended in a gas into the chamber, wherein the precursor consists of one or more compounds selected from a C4 - C10 organic compound, the organic compound being branched and having at least three methyl groups, and consisting of carbon and hydrogen and optionally one or more of oxygen, fluorine, chlorine or bromine. The organic compound may be saturated or acrylic, and may include one or more oxygen atoms each linking two carbon atoms. The organic compound preferably comprises one or more functional groups selected from a hydroxyl group, a fluorine atom, a chlorine atom and a bromine atom. The organic compound may be an alkane, alkene or alkyne. The precursor preferably comprises a branched organic compound having at least one tertiary carbon atom or at least one quaternary carbon ...

Подробнее
Номер записи: 1
27-04-2022 дата публикации

Method of forming graphene on a silicon substrate

Номер: GB0002600230A
Автор: SEBASTIAN DIXON [GB], IVOR GUINEY [GB], SIMON CHARLES STEWART THOMAS [GB]
Принадлежит:

A method for the formation of graphene on a silicon substrate comprising providing a silicon wafer having a growth surface which is free of native oxides, in a reaction chamber. Nitriding is used on the growth surface using a nitrogen-containing gas with the silicon wafer at a temperature above 800 degrees Celsius to form a silicon nitride layer. A graphene mono-layer or multiple layer structure is formed on the silicon nitride layer, wherein the method is performed in-situ and sequentially in a single reaction chamber. The growth surface may be contacted with hydrogen gas or treated with hydrofluoric acid to remove the native oxides. The reaction chamber may be an MOCVD reaction chamber. A graphene-on-silicon layer structure having an intervening silicon nitride layer obtainable by said method, wherein the nitride layer is provided on a Si(100) plane or Si(111) plane with an average crystal grain size of at least 500nm.

Подробнее
Номер записи: 2
30-03-2022 дата публикации

Method of forming graphene on a silicon substrate

Номер: GB0002599135A
Автор: SEBASTIAN DIXON [GB], IVOR GUINEY [GB], SIMON THOMAS [GB]
Принадлежит:

A method for the formation of graphene on a silicon substrate comprising providing a silicon wafer having a growth surface which is free of native oxides, in a reaction chamber. Nitriding is used on the growth surface using a nitrogen-containing gas with the silicon wafer at a temperature above 800 degrees Celsius to form a silicon nitride layer. A graphene mono-layer or multiple layer structure is formed on the silicon nitride layer, wherein the method is performed in-situ and sequentially in a reaction chamber. A silicon wafer may be provided in a single reaction chamber and may be heated to a temperature above 900 degrees Celsius. The growth surface may be contacted with hydrogen gas to remove native oxides from the growth surface. The reaction chamber may be an MOCVD reaction chamber. A graphene-on-silicon layer structure having an intervening silicon nitride layer obtainable by said method.

Подробнее
Номер записи: 3
08-03-2023 дата публикации

Methods for the growth of a graphene layer structure on a substrate and an opto-electronic device

Номер: GB0002610388A
Автор: SEBASTIAN DIXON [GB], IVOR GUINEY [GB], SIMON THOMAS [GB]
Принадлежит:

A method for the growth of a graphene layer structure on a substrate comprises providing a substrate on a susceptor in a cold-walled CVD reaction chamber, wherein the substrate is a laminate wafer comprising a silicon support and a germanium layer having a thickness of at least 100 nm, providing a carbon-containing precursor, heating the susceptor to achieve a temperature of a surface of the germanium layer sufficient to thermally decompose the precursor and below 940oC, and flowing the precursor across the surface to form the graphene layer structure. In a further method, a substrate comprises a barrier layer between a silicon support and germanium layer, the barrier layer being an inorganic oxide, nitride or fluoride. In a still further method, the susceptor is heated to a temperature of greater than 940oC. The silicon support may be a CMOS wafer, a solar cell, an LED or an OLED device.

Подробнее
Номер записи: 4
28-09-2022 дата публикации

A method of forming a graphene layer structure and a graphene substrate

Номер: GB0002605211A
Автор: SEBASTIAN DIXON [GB], IVOR GUINEY [GB], SIMON THOMAS [GB], ROSS MATTHEW GRIFFIN [GB]
Принадлежит:

A method for forming a graphene layer structure comprises providing a growth substrate having a growth surface and forming a graphene layer structure on the growth surface by chemical vapour deposition (CVD), wherein the growth surface is formed of a material selected from the group consisting of YSZ (yttria stabilised zirconia), MgAl2O4 (magnesium aluminate), YAlO3 (yttrium aluminium perovskite or YAP), SrTiO3 (strontium titanate) and CaF2 (calcium difluoride). The growth surface is preferably formed of YSZ. The growth substrate may further comprise a support layer, preferably comprising sapphire or silicon. The method may comprise providing the growth substrate on a heated susceptor in a close-coupled reaction chamber having a plurality of cooled inlets distributed across the growth surface and having a constant separation from the substrate of less than 100 mm, and introducing a carbon-containing precursor in a gas phase or suspended in a gas.

Подробнее
Номер записи: 5
07-12-2022 дата публикации

A method of forming a graphene layer structure and a graphene substrate

Номер: GB0002607410A
Автор: SEBASTIAN DIXON [GB], IVOR GUINEY [GB], SIMON THOMAS [GB], ROSS MATTHEW GRIFFIN [GB]
Принадлежит:

A method of forming a graphene layer structure comprises providing a growth substrate having a growth surface formed from CaF­2 (calcium difluoride) and forming a graphene layer structure on the growth surface by chemical vapour deposition (CVD). The growth surface may have a crystallographic orientation of <100>, <111> or <110>. The growth substrate may further comprise a support layer that preferably comprises sapphire or silicon. The method may be used in the manufacture of an electronic device. A graphene substrate obtainable by the method may have a p-type or n-type graphene layer structure. The materials used for the invention may result in advantageous electronic properties, for example improved mobility, sheet resistance and Hall sensitivity.

Подробнее
Номер записи: 6
18-01-2023 дата публикации

A graphene substrate and method of forming the same

Номер: GB0002608810A
Автор: SEBASTIAN DIXON [GB], JASPREET KAINTH [GB], IVOR GUINEY [GB]
Принадлежит:

An epitaxial graphene layer is provided on structure directly on a metal oxide layer formed by atomic layer deposition (ALD). The metal oxide layer is grown directly on a support layer; wherein the metal oxide layer has a thickness of less than 5 nm and is selected from the group consisting of Al2O3, HfO2, MgO, MgAl2O4, Ta2O5, Y2O3, ZrO2 and YSZ; and wherein the support layer is one or more layers of BN, AlN, GaN, SiC and diamond.

Подробнее
Номер записи: 7
28-09-2022 дата публикации

A wafer for the CVD growth of uniform graphene and method of manufacture therof

Номер: GB0002605167A
Автор: SEBASTIAN DIXON [GB], JASPREET KAINTH [GB], ROBERT JAGT [GB]
Принадлежит:

A method for the manufacture of a wafer comprises providing a planar silicon substrate having an insulating layer provided across a surface thereof and forming a barrier layer across the insulating layer by atomic layer deposition (ALD) using water or ozone as a precursor, wherein the barrier layer is an alumina and/or hafnium oxide layer and has a constant thickness of 20 nm or less. A method for the manufacture of a laminate comprises forming a graphene layer on the barrier layer by chemical vapour deposition (CVD) at a temperature in excess of 700oC. An electronic device comprising the laminate is preferably a Hall sensor, a current sensor, a biosensor, an electro-optic modulator or a transistor.

Подробнее
Номер записи: 8
25-10-2023 дата публикации

A graphene-containing laminate

Номер: GB0002617851A
Автор: SEBASTIAN DIXON [GB], JASPREET KAINTH [GB], THOMAS JAMES BADCOCK [GB], ROBERT WALLIS [GB], LIAM MCDONNELL [GB]
Принадлежит:

A graphene-containing laminate comprises a substrate 500, a first graphene layer structure 505, a first layer of metal oxide 540 formed by oxidation of a layer of metal, a second layer of metal oxide 520 formed by atomic layer deposition (ALD), and a second graphene layer structure 510 grown by chemical vapour deposition (CVD). The first and second metal oxide layers may comprise aluminium oxide, hafnium oxide, yttrium oxide, zirconium oxide, yttria-stabilised zirconia, scandium oxide, cerium oxide, magnesium oxide, silicon oxide, gallium oxide, or a mixture of two or more thereof. Also disclosed is an electronic device, for example an electro-optic modulator (EOM) 700 comprising the graphene-containing laminate.

Подробнее
Номер записи: 9