Declining lug structure on surface of reflector and its mfg method

A method for processing tilting projection structure on a reflector face at least includes providing a substrate forming a photo element layer which is zoned to form multiple ladders with different bottom areas connected with each other; smoothing these ladders to form multiset projections with a tilt angle. This invention uses optical diffraction method and a special light mask to make the applied reflective liquid crystal display screen reach the aim of having both reflecting brightness and wide and angle of field by single exposure.

Method for producing semiconductor element connection surface zone

This invention relates to a method for manufacturing semiconductor element interface zone including providing a semiconductor basic material to form a grating structure on the semiconductor basic material, implanting foreign atoms on the semiconductor basic material to form an interface zone and an insulation layer on the grating structure and the basic material, carburizing the insulation to form a gap wall on the side wall of the grating structure and implanting foreign atoms in the basic material to form a source/drain adjacent to the interface zone and to carry out heat process to the material.

Method for removing photoresist

The invention discloses a method for removing photoresist. The method comprises the following steps: providing a substrate which comprises patterned photoresist; carrying out ion implantation on the substrate; carrying out non-oxidation pretreatment on the substrate, wherein the treatment conditions of hydrogen, carrier gas and plasma are provided during the non-oxidation pretreatment; and stripping the photoresist from the substrate, thereby completely removing the photoresist. The method can be used for smoothly removing the photoresist material layer on the premise of considering the integrity of the polysilicon circuit on the substrate.

Preparation method of thin film transistor, array substrate and display panel

The invention discloses a preparation method of a thin film transistor (TFT), an array substrate and a display panel. According to the scheme provided by the invention, TFTs with different channel lengths can be prepared at the same time by controlling the size and transmittance of the semi-transmission region on the halftone mask plate, and the long-channel TFT can be applied to an electrostatic protection circuit to ensure the antistatic performance. Moreover, the first metal layer and the semiconductor film layer can be simultaneously processed by adopting one halftone mask plate, so that the number of mask plates required to be adopted in the preparation process is effectively reduced, and the preparation process is simplified. In addition, the halftone mask with the transmittance of 25%-35% in the semi-permeable area is adopted, and it can be ensured that the performance of the TFT prepared at the same time is good.

Making method for silicon germanium extension layer

The invention provides a method of manufacturing a Si Ge epitaxial layer, which includes the steps of: firstly, performing a first selective epitaxial growth processing under the first condition, with the performance time occupying 1 percent-20 percent of the total time of Si Ge epitaxial layer processing; and then, performing a second selective epitaxial growth processing under the second condition, with the performance time occupying 99 percent-80 percent of the total time of Si Ge epitaxial layer processing, wherein, the first and the second conditions include temperature condition or pressure condition. The reaction gas used by the first and the second selective epitaxial growth processing includes siliceous gas or germanium gas at least.

Method for manufacturing semiconductor device

The invention relates to a method for manufacturing a semiconductor device, which comprises the following steps of: firstly, providing a substrate which is provided with at least one grid electrode; forming a groove beside the grid electrode; carrying out first selective epitaxial growth process and forming a first epitaxial layer in the groove; then carrying out etching process and removing part of the first epitaxial layer to expose the substrate; carrying out second selective epitaxial growth process and forming a second epitaxial layer on the first epitaxial layer.

液晶显示器

The invention relates to a LCD which mainly comprises a first substrate and a second substrate disposed vertically, a LCD having a negative dielectric constant and arranged between the first and the second substrate, and a plurality of array arranged first protrusion, second projection and third projection, for initializing the LCD molecule in the picture element into dissimilar directions.

Reflector with lug on its inclined surface and its making process

The making process of reflector with lug on its inclined surface includes at least the following steps: providing a substrate; covering the substrate with one layer of photosensitive material; defining the photosensitive material layer to form several groups of pattern comprising lugs with different base area; and joining the lugs to form the required structure. The several groups of lugs are arranged on the substrate in matrix mode or randomly. The defining steps of photoresist layer includes exposure and development and the lugs may be joined through stoving to melt. The reflector structurehas good light scattering effect and may be used in LED screenn to reach high reflecting brightness and wide viewing angle.

避免漏极/源极延伸的超浅层接面发生漏电流的方法

The invention is a method to prevent current leakage happening on a super- shallow layer interface extended by a drain/source, firstly forming a grid on a substrate, and forming the drain/source extension in the substrate; then forming a backing layer to cover the substrate, forming a L side wall on two sides of the grid and then remove the uncovered backing layer; and finally forming a step-off drain/source extension and a drain/source in the substrate and then forming a metal silicide layer; it makes MOS transistor have a step-off drain/source extension, and properly increases the distance between the metal silicide layer and the bottom of the drain/source, which can avoid too heavy current leakage on the super-shallow layer interface and prevent the MOS transistor from being penetrating.

Making method for silicon germanium extension layer

Reflector with lug on its inclined surface and its making process

Method for manufacturing semiconductor device

The invention relates to a method for manufacturing a semiconductor device, which comprises the following steps of: firstly, providing a substrate which is provided with at least one grid electrode; forming a groove beside the grid electrode; carrying out first selective epitaxial growth process and forming a first epitaxial layer in the groove; then carrying out etching process and removing partof the first epitaxial layer to expose the substrate; carrying out second selective epitaxial growth process and forming a second epitaxial layer on the first epitaxial layer.

Method and device for cleaning wafer

The invention discloses a method and a device for cleaning wafers. The method for cleaning wafers comprises the following steps: providing a platform for bearing and rotating a wafer, wherein the wafer is provided with a surface to be cleaned; arranging a nozzle above the wafer for spraying cleanout fluid on the surface to be cleaned; then cleaning: rotating the wafer; and moving the nozzle at non-constant velocity to a second set point from a first set point on the surface to be cleaned so that the time the first set point exposes to the cleanout fluid is same with the time the second set point exposes to the cleanout fluid. In addition, the nozzle moves slowly when close to the edge of the wafer, and moves faster when close to the centre of a circle of the wafer.