Airfoil cooling circuits

An airfoil includes leading and trailing edges; first and second sides extending from the leading edge to the trailing edge, each side having an exterior surface; a core passage located between the first and second sides and the leading and trailing edges; and a wall structure located between the core passage and the exterior surface of the first side. The wall structure includes a plurality of cooling fluid inlets communicating with the core passage for receiving cooling fluid from the core passage, a plurality of cooling fluid outlets on the exterior surface of the first side for expelling cooling fluid and forming a cooling film along the exterior surface of the first side, and a plurality of cooling passages communicating with the plurality of cooling fluid inlets and the plurality of cooling fluid outlets. At least a portion of one cooling passage extends between adjacent cooling fluid outlets.

Plasma-enhanced etching in an augmented plasma processing system

Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

Mask shrink layer for high aspect ratio dielectric etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask shrink layer may be deposited through a vapor deposition process including, but not limited to, atomic layer deposition or chemical vapor deposition. The mask shrink layer can result in narrower, more vertically uniform etched features. In some embodiments, etching is completed in a single etch step. In some other embodiments, the etching may be done in stages, cycled with a deposition step designed to deposit a protective sidewall coating on the partially etched features. Metal-containing films are particularly suitable as mask shrink films and protective sidewall coatings.

HIGH RESPONSE TURBINE TIP CLEARANCE CONTROL SYSTEM

An actuation system according to various embodiments can include an actuation ring having a first end and a second end separated by a gap, the actuation ring being configured to be coupled to a blade outer air seal (BOAS). The actuation system can also include an actuator coupled to at least one of the first end or the second end and configured to adjust a size of the gap such that a tip clearance between the BOAS and a blade tip is reduced in response to the size of the gap being reduced.

TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants having low sticking coefficients in some embodiments. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition or plasma assisted chemical vapor deposition.

ION TO NEUTRAL CONTROL FOR WAFER PROCESSING WITH DUAL PLASMA SOURCE REACTOR

The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material. 1. An apparatus for etching substrates comprising:(a) a reaction chamber, (i) a first plate, and', '(ii) a second plate comprising at least two substantially concentric plate sections that are independently rotatable with respect to the first plate, wherein the first plate and second plate have apertures extending through the thickness of each plate,, '(b) a plate assembly positioned in the reaction chamber thereby dividing the reaction chamber into an upper sub-chamber and a lower sub-chamber, wherein the plate assembly comprises(c) one or more gas inlets to the upper sub-chamber,(d) one or more gas outlets to the reaction chamber designed or configured to remove gas from the reaction chamber, and(e) a plasma generation source designed or configured to produce a plasma in the upper sub-chamber.2. The apparatus of claim 1 , comprising at least three substantially concentric plate sections.3. The apparatus of claim 1 , wherein at least some of the apertures in at least one of the plates of the plate assembly have an aspect ratio ...

TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants and/or reaction mechanisms that result in substantially complete sidewall coating at relatively low temperatures without the use of plasma. In some cases the protective coating is deposited using molecular layer deposition techniques.

TECHNIQUE TO DEPOSIT METAL-CONTAINING SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features. 1. A method of forming an etched feature in a dielectric-containing stack on a semiconductor substrate , the method comprising:(a) generating a first plasma comprising an etching reactant, exposing the substrate to the first plasma, and partially etching the feature in the dielectric-containing stack;(b) after (a), depositing a protective film on sidewalls of the feature, the protective film comprising a metal, wherein the protective film comprises an electrically conductive film; and(c) repeating (a)-(b) until the feature is etched to a final depth, wherein the protective film deposited in (b) substantially prevents lateral etch of the feature during (a), and wherein the feature has an aspect ratio of about 5 or greater at its final depth.2. The method of claim 1 , wherein the protective film comprises a metal nitride claim 1 , a metal carbide claim 1 , a metal boride claim 1 , or a combination thereof.3. The method of claim 1 , wherein the metal ...

SELF CRYSTALLINE ORIENTATION FOR INCREASED COMPLIANCE

Aspects of the disclosure are directed to a seal comprising: a shoe, and at least one beam coupled to the shoe, wherein the seal includes a single crystal material with a predetermined crystalline orientation. Aspects of the disclosure are directed to a method for designing a seal, comprising: obtaining a requirement associated with at least one of: a geometrical profile of the seal, a temperature range over which the seal is to operate, a natural frequency associated with the seal, or a range of deflection associated with the seal, selecting a crystalline orientation for a single crystal material of the seal based on the requirement, and fabricating the seal based on the selected crystalline orientation. 1. A seal comprising:a shoe; andat least one beam coupled to the shoe,wherein the seal includes a single crystal material with a predetermined crystalline orientation.2. The seal of claim 1 , wherein the single crystal material is a nickel-based alloy.3. The seal of claim 1 , wherein the orientation accommodates a requirement associated with at least a geometrical profile of the seal.4. The seal of claim 3 , wherein the geometrical profile is specified in terms of at least a radius of the seal.5. The seal of claim 3 , wherein the geometrical profile is specified in terms of at least a length of the at least one beam.6. The seal of claim 1 , wherein the orientation accommodates a requirement associated with at least a natural frequency associated with the seal.7. The seal of claim 6 , wherein the orientation provides for the natural frequency being greater than a frequency associated with a speed of a rotating component in an amount that is greater than a threshold.8. The seal of claim 1 , wherein the orientation accommodates a requirement associated with at least a range of deflection associated with the seal.9. The seal of claim 1 , wherein the seal is included in an engine.10. The seal of claim 1 , wherein the seal is included in an engine of an aircraft.11. The ...

THIN SEAL FOR AN ENGINE

Aspects of the disclosure are directed to a seal configured to interface with at least a first component and a second component of a gas turbine engine. A method for forming the seal includes obtaining an ingot of a fine grained, or a coarse grained, or a columnar grained or a single crystal material from a precipitation hardened nickel base superalloy containing at least 40% by volume of the precipitate of the form Ni3(Al, X), where X is a metallic or refractory element, and processing the ingot to generate a sheet of the material, where the sheet has a thickness within a range of 0.010 inches and 0.050 inches inclusive.

System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas

A method of etching a semiconductor wafer including injecting a source gas mixture into a process chamber including injecting the source gas mixture into a multiple hollow cathode cavities in a top electrode of the process chamber and generating a plasma in each one of the hollow cathode cavities. Generating the plasma in the hollow cathode cavities includes applying a first biasing signal to the hollow cathode cavities. The generated plasma or activated species is output from corresponding outlets of each of the hollow cathode cavities into a wafer processing region in the process chamber. The wafer processing region is located between the outlets of the hollow cathode cavities and a surface to be etched. An etchant gas mixture is injected into the wafer processing region. A plasma can also be supported and/or generated in the wafer processing region.

Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.

PLASMA-ENHANCED ETCHING IN AN AUGMENTED PLASMA PROCESSING SYSTEM

Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma. 121-. (canceled)22. An apparatus for etching substrates , the apparatus comprising:(a) a plasma processing chamber comprising a primary plasma generating region and a secondary plasma generating region, the primary plasma generating region having a first parallel-plate capacitively coupled arrangement and the secondary plasma generating region having a second parallel-plate capacitively coupled arrangement;(b) a ground electrode separating the primary plasma generating region from the secondary plasma generating region, the ground electrode (1) configured to act as a first electrode for generating the primary plasma and act as a second electrode for generating the secondary plasma; and (2) having an uniformly distributed array of holes or slots;(c) a first inlet coupled to the primary plasma generating region from outside the plasma processing chamber;(d) a second inlet coupled to the secondary plasma generating region;(e) a first plasma generation source configured to generate a primary plasma in the primary plasma generating region;(f) a second plasma generation source configured to generate a secondary plasma in the secondary plasma generating region; and(g) a substrate support located in the primary plasma generating ...

System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas

A method of etching a wafer includes injecting a source gas mixture into a process chamber. The injecting includes injecting the source gas into multiple hollow cathode cavities in a top electrode, generating plasma in each of the cavities, and outputting the plasma from corresponding outlets of the cavities into a wafer processing region in the chamber, where the processing region is located between the outlets and a surface to be etched. An etchant gas mixture is injected into the processing region through injection ports in the top electrode such that the etchant gas mixes with the plasma output from the outlets. The etchant gas is prevented from flowing into the outlets of the cavities by the plasma flowing from the outlets. Mixing the etchant gas and the output from the cavities generates a desired chemical species in the processing region and thereby enables the surface to be etched.

TECHNIQUE TO TUNE SIDEWALL PASSIVATION DEPOSITION CONFORMALITY FOR HIGH ASPECT RATIO CYLINDER ETCH

Methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate are provided. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective film on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective film may be deposited under different conditions (e.g., pressure, duration of reactant delivery, duration of plasma exposure, RF power, and/or RF duty cycle, etc.) in different deposition operations. Such conditions may affect the degree of conformality at which the protective film forms. In various embodiments, one or more protective films may be sub-conformal. In these or other embodiments, one or more other protective films may be conformal.

Variable vane and seal arrangement

One exemplary embodiment of this disclosure relates to a system including an airfoil having a static portion, a moveable portion, and a seal between the static portion and the moveable portion. The seal is moveable separate from the static portion and the moveable portion.

Technique to deposit sidewall passivation for high aspect ratio cylinder etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in substantial preservation of a mask layer on the substrate. The protective coating may be deposited using particular reactants and/or reaction conditions that are unlikely to damage the mask layer. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition, a modified plasma assisted atomic layer deposition, or plasma assisted ...

MASK SHRINK LAYER FOR HIGH ASPECT RATIO DIELECTRIC ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask shrink layer may be deposited through a vapor deposition process including, but not limited to, atomic layer deposition or chemical vapor deposition. The mask shrink layer can result in narrower, more vertically uniform etched features. In some embodiments, etching is completed in a single etch step. In some other embodiments, the etching may be done in stages, cycled with a deposition step designed to deposit a protective sidewall coating on the partially etched features. Metal-containing films are particularly suitable as mask shrink films and protective sidewall coatings. 1. (canceled)2. An apparatus for forming an etched feature in a dielectric-containing stack on a substrate , the apparatus comprising: an inlet for introducing process gases to the reaction chamber, and', 'an outlet for removing material from the reaction chamber, and, 'one or more reaction chambers, wherein at least one reaction chamber is designed or configured to perform etching, and wherein at least one reaction chamber is designed or configured to perform deposition, each reaction chamber comprisinga controller having instructions for:(a) receiving the substrate in the reaction chamber designed or configured to perform deposition, the substrate comprising the dielectric-containing stack and a mask layer positioned over the dielectric-containing stack, the mask layer including a pattern comprising openings in the mask layer that define where the feature is to be etched;(b) flowing one or more vapor phase deposition reactants into the reaction chamber designed or configured to perform deposition and depositing a mask shrink layer on the substrate, wherein the mask shrink layer is formed from a ...

TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants having low sticking coefficients in some embodiments. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition or plasma assisted chemical vapor deposition. 1. A method of forming an etched feature in a substrate comprising dielectric material , the method comprising:(a) generating a first plasma comprising an etching reactant, exposing the substrate to the first plasma, and partially etching the feature in the substrate;(b) after (a), pre-treating the substrate to form activated surface groups on sidewalls of the feature;(c) after (b) begins, depositing a protective film on sidewalls of the feature, wherein the protective film is deposited as a self-assembled monolayer film; and(d) repeating (a)-(c) until the feature is etched to a final depth, wherein the protective film deposited in (c) substantially prevents lateral etch of the feature during (a), and wherein the feature has an aspect ratio of about 5 or greater at its final depth.2. The method of claim 1 , wherein pre-treating the substrate comprises exposing the substrate to vapor comprising HO and/or NH.3. The method of claim 1 , wherein pre-treating the substrate ...

Ion to neutral control for wafer processing with dual plasma source reactor

The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.

Technique to deposit sidewall passivation for high aspect ratio cylinder etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants and/or reaction mechanisms that result in substantially complete sidewall coating at relatively low temperatures without the use of plasma. In some cases the protective coating is deposited using molecular layer deposition techniques. In certain implementations the protective coating is fluorinated.

TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in substantial preservation of a mask layer on the substrate. The protective coating may be deposited using particular reactants and/or reaction conditions that are unlikely to damage the mask layer. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition, a modified plasma assisted atomic layer deposition, or plasma assisted chemical vapor deposition.

THERMAL LIFTING MEMBER FOR BLADE OUTER AIR SEAL SUPPORT

Thermal lifting members for blade outer air seal supports of gas turbine engines include a hollow body defining a thermal cavity therein, at least one inlet fluid connector fluidly connected to the thermal cavity configured to supply hot fluid to the thermal cavity from a fluid source, at least one outlet fluid connector fluidly connected to the thermal cavity configured to allow the hot fluid to exit the thermal cavity, and at least one lifting hook configured to engage with a blade outer air seal support, wherein the thermal lifting member is configured to thermally expand outward when hot fluid is passed through the thermal cavity such that during thermal expansion the at least one lifting hook forces the blade outer air seal support to move outward. 1. A thermal lifting member for a blade outer air seal support of a gas turbine engine comprising:a hollow body defining a thermal cavity therein;at least one inlet fluid connector fluidly connected to the thermal cavity configured to supply hot fluid to the thermal cavity from a fluid source;at least one outlet fluid connector fluidly connected to the thermal cavity configured to allow the hot fluid to exit the thermal cavity; andat least one lifting hook configured to engage with a blade outer air seal support,wherein the thermal lifting member is configured to thermally expand outward when hot fluid is passed through the thermal cavity such that during thermal expansion the at least one lifting hook forces the blade outer air seal support to move outward.2. The thermal lifting member of claim 1 , further comprising one or more internal features within the thermal cavity configured to at least one of increase heat transfer within the hollow body or provide fluid flow augmentation within the thermal cavity.3. The thermal lifting member of claim 2 , wherein the one or more internal features comprises trip strips claim 2 , pedestals claim 2 , pin fins claim 2 , turbulators claim 2 , or blade fins.4. The thermal ...

TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants and/or reaction mechanisms that result in substantially complete sidewall coating at relatively low temperatures without the use of plasma. In some cases the protective coating is deposited using molecular layer deposition techniques. In certain implementations the protective coating is fluorinated. 1. A method of forming an etched feature in a stack comprising a dielectric material on a semiconductor substrate , the method comprising:(a) generating a first plasma comprising an etching reactant, exposing the substrate to the first plasma, and partially etching the feature in the stack; (i) exposing the substrate to a first reactant and allowing the first reactant to adsorb onto the substrate,', '(ii) exposing the substrate to a second reactant, wherein the first and second reactants react with one another to form the protective film, and', '(iii) repeating (i) and (ii) in a cyclic manner until the protective film reaches a target thickness, wherein the protective film is a fluorinated organic polymeric film and is deposited along substantially the entire depth of the feature; and, '(b) after (a), depositing a protective film on sidewalls of the feature by'}(c) repeating (a)-(b) until the feature is etched to a final depth, wherein the protective film deposited in (b) substantially prevents lateral etch ...

WIGGLING CONTROL FOR PSEUDO-HARDMASK

An apparatus for etching features in an etch layer is provided. A plasma processing chamber is provided, comprising a chamber wall, a chuck, a pressure regulator, an electrode or coil, a gas inlet, and a gas outlet. A gas source comprises a fluorine free deposition gas source and an etch gas source. A controller comprises at least one processor and computer readable media, comprising computer readable code for providing a conditioning for a patterned pseudo-hardmask, wherein the conditioning comprises computer readable code providing a fluorine free deposition gas comprising a hydrocarbon gas, computer readable code for forming a plasma, computer readable code for providing a bias less than 500 volts, and computer readable code for forming a deposition on top of the patterned pseudo-hardmask, computer readable code for etching the etch layer, and computer readable code for cyclically repeating the conditioning and etching at least twice. 1. An apparatus for etching features in an etch layer , said apparatus comprising: a chamber wall forming a plasma processing chamber enclosure;', 'a chuck for supporting and chucking a substrate within the plasma processing chamber enclosure;', 'a pressure regulator for regulating the pressure in the plasma processing chamber enclosure;', 'at least one electrode or coil for providing power to the plasma processing chamber enclosure for sustaining a plasma;', 'a gas inlet for providing gas into the plasma processing chamber enclosure; and', 'a gas outlet for exhausting gas from the plasma processing chamber enclosure;, 'a plasma processing chamber, comprising a fluorine free deposition gas source; and', 'an etch gas source;, 'a gas source in fluid connection with the gas inlet, comprising at least one processor; and', [ computer readable code providing a fluorine free deposition gas comprising a hydrocarbon gas;', 'computer readable code for forming a plasma from the fluorine free deposition gas;', 'computer readable code for ...

COOLED TURBINE BLADE SHROUD

A process for forming a turbine blade comprises the step of forming an as-cast turbine blade having an airfoil portion and a tip shroud, wherein the forming step comprises forming at least one as-cast cooling circuit within the tip shroud. 16-. (canceled)7. A process for forming a turbine blade comprising the steps of:forming an as-cast turbine blade having an airfoil portion and a tip shroud: andsaid forming step comprising forming at least one as-cast cooling circuit within said tip shroud.8. The process according to claim 7 , wherein said airfoil portion forming step comprises using a primary ceramic core to form at least one radial inner passage within said airfoil portion of said turbine blade; and said at least one as-cast cooling circuit forming step comprises attaching a plurality of refractory metal cores to said primary ceramic core.9. The process according to claim 8 , wherein said attaching step comprises joining each of said refractory cores to said primary ceramic core by inserting a plurality of tabs on each said refractory metal core into a plurality of slots in a tip of the primary ceramic core.10. The process of claim 7 , wherein said at least one cooling circuit forming step comprises forming at least one cooling circuit at a mid-plane level of the as-cast shroud.11. The process of claim 7 , wherein said at least one cooling circuit forming step comprises forming two cooling circuits at a mid-plane level of the as-cast shroud.12. The process of claim 7 , wherein said forming step comprises forming each said cooling circuit with a first cooling fluid exit on one side of the shroud and at least two additional cooling fluid exits on a second side of the shroud. The instant application is a divisional application of allowed U.S. patent application Ser. No. 12/362,724, filed Jan. 30, 2009, entitled Cooled Turbine Blade Shroud.There is described herein a turbine blade having a tip shroud with cooling circuits for use in high temperature applications. ...

THERMAL GRADIANT TOLERANT TURBOMACHINE COUPLING MEMBER

An exemplary turbomachine securing apparatus includes a coupling member that couples a first component to a second component within a turbomachine. The first component and the second component are both non-rotating components during operation of the turbomachine. The coupling member limiting relative circumferential movement between the first component and the second component, and permitting relative radial movement. 1. A turbomachine securing apparatus , comprising:a coupling member that couples a first component to a second component within a turbomachine, the first component and the second component are both non-rotating components during operation of the turbomachine, wherein the coupling member limits relative circumferential movement between the first component and second component and permits relative radial movement.2. The turbomachine coupling apparatus of claim 1 , wherein the first component comprises a bearing compartment.3. The turbomachine coupling apparatus of claim 1 , wherein the second component comprises a housing connected to one or more struts extending radially across a flow path of the turbomachine.4. The turbomachine coupling apparatus of claim 1 , wherein the coupling member is a Hirth coupling member that includes a plurality of Hirth teeth receivable within a plurality of Hirth grooves claim 1 , the first component and the second component each establishing a portion of the plurality of Hirth grooves.5. The turbomachine coupling apparatus of claim 4 , wherein the first component establishes a radially inner portion of the Hirth grooves claim 4 , and the second component establishes a radially outer portion of the Hirth grooves.6. The turbomachine coupling apparatus of claim 4 , wherein the Hirth teeth have radially-extending claim 4 , planar sides.7. The turbomachine coupling apparatus of claim 4 , including a mechanical fastener that holds the Hirth teeth within the Hirth grooves.8. The turbomachine coupling apparatus of claim 1 , ...

BLADE OUTER AIR SEAL HYBRID CASTING CORE

A hybrid sacrificial core for forming an impingement space and an internal cooling passageway network separate from the impingement space of a part may comprise a ceramic core having a first surface portion for forming the impingement space, and a refractory metal core that forms a plurality of passages of the internal cooling passageway network. 1. A hybrid sacrificial core for forming an impingement space and an internal cooling passageway network separate from the impingement space of a part , the core comprising:a ceramic core having a first surface portion for forming the impingement space, wherein the ceramic core is comprised of at least two separate distinct parts; anda refractory metal core that forms a plurality of passages of the internal cooling passageway network.2. (canceled)3. The sacrificial core of claim 1 , wherein the two separate distinct parts are of the same geometry.4. The sacrificial core of claim 1 , wherein the refractory metal core is comprised of four distinct parts.5. The sacrificial core of claim 4 , wherein the refractory metal core is comprised of a leading edge core claim 4 , a trailing edge core claim 4 , and two side cores.6. The sacrificial core of wherein the four distinct parts are joined together.7. The sacrificial core of wherein at least one of the distinct parts contains an axial portion and a radial portion.8. The sacrificial core of claim 4 , wherein the four distinct parts are arranged at ninety degrees with respect to each adjacent part claim 4 , and wherein a generally rectangular space is contained among the four distinct parts.9. The sacrificial core of claim 4 , wherein at least two of the leading edge core claim 4 , trailing edge core claim 4 , and two side cores are minor images of one another.10. The sacrificial core of claim 1 , wherein the ceramic core is attached to the refractory metal core.1120.-. (canceled)21. The sacrificial core of wherein the two separate distinct parts each contain an axial portion and a ...

AIRFOIL COOLING CIRCUITS

An airfoil includes leading and trailing edges; first and second sides extending from the leading edge to the trailing edge, each side having an exterior surface; a core passage located between the first and second sides and the leading and trailing edges; and a wall structure located between the core passage and the exterior surface of the first side. The wall structure includes a plurality of cooling fluid inlets communicating with the core passage for receiving cooling fluid from the core passage, a plurality of cooling fluid outlets on the exterior surface of the first side for expelling cooling fluid and forming a cooling film along the exterior surface of the first side, and a plurality of cooling passages communicating with the plurality of cooling fluid inlets and the plurality of cooling fluid outlets. At least a portion of one cooling passage extends between adjacent cooling fluid outlets. 1. An airfoil comprising:leading and trailing edges;a first side extending from the leading edge to the trailing edge and having an exterior surface;a second side generally opposite the first side and extending from the leading edge to the trailing edge and having an exterior surface;a core passage located between the first and second sides and the leading and trailing edges; and a plurality of cooling fluid inlets communicating with the core passage for receiving cooling fluid from the core passage;', 'a plurality of cooling fluid outlets on the exterior surface of the first side for expelling cooling fluid and forming a cooling film along the exterior surface of the first side; and', 'a plurality of cooling passages communicating with the plurality of cooling fluid inlets and the plurality of cooling fluid outlets, wherein at least a portion of one cooling passage extends between adjacent cooling fluid outlets., 'a wall structure located between the core passage and the exterior surface of the first side, the wall structure comprising2. The airfoil of claim 1 , wherein ...

PLASMA-ENHANCED ETCHING IN AN AUGMENTED PLASMA PROCESSING SYSTEM.

Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma. 1. A method for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure , comprising:providing a primary feed gas into said primary plasma generating region;providing a secondary feed gas into said secondary plasma generating region, said secondary feed gas being different from said primary feed gas;generating a primary plasma from said primary feed gas;generating a secondary plasma from said secondary feed gas;etching said substrate using at least said primary plasma and neutral species from said secondary plasma, said neutral species migrating from said secondary plasma generating region to said primary plasma generating region across said semi-barrier structure, said semi-barrier structure but prevents appreciable transfer of charged particles, plasma, from the primary plasma generating region to the secondary plasma generating region.2. The method of wherein said etching is a dielectric etch.3. The method of wherein a pressure in said secondary plasma generating region is greater than a pressure in said primary plasma generating region.4. The method of ...

ION TO NEUTRAL CONTROL FOR WAFER PROCESSING WITH DUAL PLASMA SOURCE REACTOR

The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material. 1. A plate assembly for a reaction chamber comprising a plasma source , the plate assembly comprising:a first plate; anda second plate comprising at least two substantially concentric plate sections that are independently rotatable with respect to the first plate, wherein the first plate and second plate have apertures extending through the thickness of each plate, and wherein the first plate and second plate are substantially parallel and vertically aligned with one another such that either (i) the first plate is above the second plate, or (ii) the first plate is below the second plate.2. The plate assembly of claim 1 , wherein the second plate comprises at least three substantially concentric plate sections.30204. The plate assembly of claim 1 , wherein at least some of the apertures in at least one of the plates of the plate assembly have an aspect ratio between about .-..4. The plate assembly of claim 1 , wherein at least one of the plates of the plate assembly has an open area between about 40-60%.5. The plate assembly of ...

FLUOROCARBON BASED ASPECT-RATIO INDEPENDENT ETCHING

A method for etching features into an etch layer disposed below a patterned mask is provided. At least three cycles are provided, where each cycle comprises providing an ion bombardment, by creating a plasma, of the etch layer to create activated sites of surface radicals in parts of the etch layer exposed by the patterned mask, extinguishing the plasma, exposing the etch layer to a plurality of fluorocarbon containing molecules, which causes the fluorocarbon containing molecules to selectively bind to the activated sites, wherein the selective binding is self limiting, and providing an ion bombardment of the etch layer to initiate an etch reaction between the fluorocarbon containing molecule and the etch layer, wherein the ion bombardment of the etch layer to initiate an etch reaction causes the formation of volatile etch products formed from the etch layer and the fluorocarbon containing molecule. 1. A method for etching features into an etch layer disposed below a patterned mask , comprising performing at least three cycles , wherein each cycle comprises:providing by creating a plasma, an ion bombardment of the etch layer to create activated sites in parts of the etch layer exposed by the patterned mask;extinguishing the plasma;exposing the etch layer to a plurality of fluorocarbon containing molecules, which causes the plurality of fluorocarbon containing molecules to selectively bind to the activated sites, wherein the selective binding is self limiting; andproviding an ion bombardment of the etch layer to initiate an etch reaction between the fluorocarbon containing molecules and the etch layer, wherein the ion bombardment of the etch layer to initiate an etch reaction causes the formation of volatile etch products formed from the etch layer and the fluorocarbon containing molecule.2. The method claim 1 , as recited in claim 1 , further comprising removing unbound fluorocarbon containing molecules after exposing the etch layer to the plurality of fluorocarbon ...

AIRFOIL COOLING CIRCUITS

An airfoil includes leading and trailing edges; first and second sides extending from the leading edge to the trailing edge, each side having an exterior surface; a core passage located between the first and second sides and the leading and trailing edges; and a wall structure located between the core passage and the exterior surface of the first side. The wall structure includes a plurality of cooling fluid inlets communicating with the core passage for receiving cooling fluid from the core passage, a plurality of cooling fluid outlets on the exterior surface of the first side for expelling cooling fluid and forming a cooling film along the exterior surface of the first side, and a plurality of cooling passages communicating with the plurality of cooling fluid inlets and the plurality of cooling fluid outlets. At least a portion of one cooling passage extends between adjacent cooling fluid outlets. 1. A refractory metal core comprising: a downstream end wall;', 'an upstream end wall opposite the downstream end wall;', 'a first sidewall connecting the downstream end wall to the upstream end wall;', 'a second sidewall connecting the downstream end wall to the upstream end wall, the second sidewall opposite the first sidewall;', 'a plurality of primary curved tabs located between the downstream end wall and the upstream end wall and aligned between the first sidewall and the second sidewall, the plurality of primary curved tabs extending outwardly from the refractory metal sheet in a first direction;', 'a plurality of primary openings in the refractory metal sheet, wherein each one of the plurality of primary openings is proximate to one of the plurality of primary curved tabs;', 'a plurality of secondary curved tabs proximate the downstream endwall, the plurality of secondary curved tabs extending outwardly from the refractory metal sheet; and', 'a plurality of secondary openings in the refractory metal sheet located between the plurality of primary curved tabs and ...

BLADE OUTER AIR SEAL COOLING SCHEME

A cooling scheme for a blade outer air seal includes a perimeter cooling arrangement configured to convectively cool a perimeter of the blade outer air seal, and a core cooling arrangement configured to cool a central portion of the blade outer air seal through impingement cooling and to provide film cooling to an inner diameter face of the blade outer air seal. 1. A blade outer air seal comprising: a leading edge;', 'a trailing edge;', 'a first circumferential end extending between the leading edge and the trailing edge;', 'a second circumferential end extending between the leading edge and the trailing edge and disposed opposite the first circumferential end;', 'an outer diameter face; and', 'an inner diameter face;, 'a main body portion including at least one microcircuit passage extending through a perimeter of the main body portion;', 'a plurality of inlet ports extending through the outer diameter face and configured to provide bleed air to the at least one microcircuit passage; and', 'a plurality of outlet ports extending along one of the first circumferential end and the second circumferential end;', 'wherein the at least one microcircuit passage is configured to provide convection cooling to the perimeter of the blade outer air seal and includes a first microcircuit passage in the first circumferential edge and the second microcircuit in a second circumferential edge; and', 'wherein the first microcircuit passage includes a first axial portion extending from the leading edge to the trailing edge, and wherein the second microcircuit passage includes a second axial portion extending from the leading edge to the trailing edge;, 'a perimeter cooling arrangement comprising a central cavity disposed within the main body portion;', 'at least one inlet aperture extending from the outer diameter face and into the central cavity; and', 'a plurality of outlet apertures extending from the inner diameter face and into the central cavity., 'a core cooling arrangement ...

CONFORMAL SIDEWALL PASSIVATION

A method for etching features into an etch layer in a stack disposed below a patterned mask with mask features is provided. Coating providing molecules are provided. The coating providing molecules are pyrolyzed, which only produces a first set of byproducts and a second set of byproducts, wherein the first set of byproducts have a sticking coefficient between 10to 5×10and wherein the second set of byproducts includes all remaining byproducts from the pyrolysis wherein all remaining byproducts from the pyrolysis have sticking coefficients less than 10. The stack is exposed to the first set of byproducts, causing the first set of byproducts to deposit a coating. The etch layer is etched. 1. A method for etching features into an etch layer in a stack disposed below a patterned mask with mask features , comprising:providing coating providing molecules;{'sup': −6', '−3', '−6, 'pyrolyzing the coating providing molecules, which only produce a first set of byproducts and a second set of byproducts, wherein the first set of byproducts have a sticking coefficient between 10to 5×10and wherein the second set of byproducts includes all remaining byproducts from the pyrolysis wherein all remaining byproducts from the pyrolysis have sticking coefficients less than 10;'}exposing the stack to the first set of byproducts, causing the first set of byproducts to deposit a coating; andetching the etch layer.2. The method claim 1 , as recited in claim 1 , wherein the exposing the substrate to the first set of byproducts and etching the etch layer are performed in separate steps that are cyclically repeated for a plurality of cycles.3. The method claim 2 , as recited in claim 2 , wherein the pyrolyzing the coating providing molecules and the exposing the stack to the first set of byproducts are plasma free processes.4. The method claim 3 , as recited in claim 3 , wherein the first set of byproducts conformally coats features in the etch layer.5. The method claim 4 , as recited in claim 4 ...

SYSTEM, METHOD AND APPARATUS FOR PLASMA ETCH HAVING INDEPENDENT CONTROL OF ION GENERATION AND DISSOCIATION OF PROCESS GAS

A method of etching a wafer includes injecting a source gas mixture into a process chamber. The injecting includes injecting the source gas into multiple hollow cathode cavities in a top electrode, generating plasma in each of the cavities, and outputting the plasma from corresponding outlets of the cavities into a wafer processing region in the chamber, where the processing region is located between the outlets and a surface to be etched. An etchant gas mixture is injected into the processing region through injection ports in the top electrode such that the etchant gas mixes with the plasma output from the outlets. The etchant gas is prevented from flowing into the outlets of the cavities by the plasma flowing from the outlets. Mixing the etchant gas and the output from the cavities generates a desired chemical species in the processing region and thereby enables the surface to be etched. 1. A method of etching a semiconductor wafer comprising: injecting the source gas mixture into a plurality of hollow cathode cavities in a top electrode of the process chamber;', 'generating a plasma in each one of the plurality of hollow cathode cavities including applying a first biasing signal to the plurality of hollow cathode cavities; and', 'outputting the generated plasma from corresponding outlets of each of the plurality of hollow cathode cavities into a wafer processing region in the process chamber, the wafer processing region being located between the outlets of each of the plurality of hollow cathode cavities and a surface to be etched;, 'injecting a source gas mixture into a process chamber includinginjecting a etchant gas mixture into the wafer processing region, the etchant gas mixture being injected through a plurality of injection ports in the top electrode such that the etchant gas mixture mixes with the plasma output from the outlets of the plurality of hollow cathode cavities including generating a desired chemical species in the wafer processing region and ...

VARIABLE AREA TURBINE ARRANGEMENT WITH SECONDARY FLOW MODULATION

A variable area turbine arrangement according to an exemplary aspect of the present disclosure includes, among other things, a variable vane assembly and a secondary flow system associated with the variable vane assembly. Flow modulation of a cooling fluid through the secondary flow system is changed simultaneously with actuation of the variable vane assembly. 1. A variable vane assembly for a gas turbine engine comprising:a variable airfoil movable about a spindle; anda secondary flow system including at least one of an exit nozzle vane and a blocker, wherein the one of the exit nozzle vane and the blocker is mechanically linked to the spindle by a linkage assembly, wherein actuation of the variable vane assembly modulates flow of a cooling fluid through the secondary flow system by changing a rotational positioning of the at least one of the exit nozzle vane and the blocker.2. The variable vane assembly as recited in claim 1 , wherein the at least one of an exit nozzle vane and a blocker is an exit nozzle vane.3. The variable vane assembly as recited in claim 2 , wherein the linkage assembly includes a spur gear coupled to the spindle.4. The variable vane assembly as recited in claim 3 , wherein the linkage assembly includes a lever arm connected to the exit nozzle vane.5. The variable vane assembly as recited in claim 1 , wherein the at least one of an exit nozzle vane and a blocker is a blocker.6. The variable vane assembly as recited in claim 5 , wherein the secondary flow system includes first and second exit nozzle vanes claim 5 , and the blocker is positioned between the first and second exit nozzle vanes.7. The variable vane assembly as recited in claim 6 , wherein the linkage assembly includes a spur gear coupled to the spindle.8. The variable vane assembly as recited in claim 7 , wherein the linkage assembly includes a lever arm connected to the exit nozzle vane.9. The variable vane assembly as recited in claim 1 , wherein the spindle is an inner spindle ...

ION TO NEUTRAL CONTROL FOR WAFER PROCESSING WITH DUAL PLASMA SOURCE REACTOR

The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material. 1. An apparatus for etching substrates comprising:(a) a reaction chamber, (i) a first plate, and', '(ii) a second plate comprising at least two substantially concentric plate sections that are independently rotatable with respect to the first plate, wherein the first plate and second plate have apertures extending through the thickness of each plate,, '(b) a plate assembly positioned in the reaction chamber thereby dividing the reaction chamber into an upper sub-chamber and a lower sub-chamber, wherein the plate assembly comprises(c) one or more gas inlets to the upper sub-chamber,(d) one or more gas outlets to the reaction chamber designed or configured to remove gas from the reaction chamber, and(e) a plasma generation source designed or configured to produce a plasma in the upper sub-chamber.2. The apparatus of claim 1 , comprising at least three substantially concentric plate sections.3. The apparatus of claim 1 , wherein at least some of the apertures in at least one of the plates of the plate assembly have an aspect ratio ...

CORE ASSEMBLY INCLUDING STUDDED SPACER

A core assembly for a casting system according to an exemplary aspect of the present disclosure includes, among other things, a core that includes a body and at least one hole formed through the body and a spacer that extends through the at least one hole. The spacer includes a stud portion and a chaplet portion configured to abut a surface of the body that circumscribes the at least one hole. 1. A core assembly for a casting system , comprising:a core including a body and at least one hole formed through said body; anda spacer extending through said at least one hole, said spacer including a first stud portion, a second stud portion and a chaplet portion, the chaplet portion including a skirt between said first stud portion and said second stud portion, and said skirt abuts a rim of said body circumscribing said at least one hole.2. The core assembly as recited in claim 1 , wherein said core corresponds to an internal cavity of a gas turbine engine component.3. The core assembly as recited in claim 2 , wherein said gas turbine engine component is an airfoil.4. The core assembly as recited in claim 1 , wherein said skirt has a larger diameter than said at least one hole.5. The core assembly as recited in claim 4 , wherein said first stud portion defines a first diameter claim 4 , and said second stud portion defines a second diameter that differs from said first diameter.6. The core assembly as recited in claim 5 , wherein said skirt defines a third diameter that is greater than each of said first and second diameters.7. The core assembly as recited in claim 6 , wherein said skirt is conical such that surfaces of the skirt slope outwardly from the first stud portion.8. The core assembly as recited in claim 1 , wherein said core is a refractory metal core (RMC).9. The core assembly as recited in claim 1 , wherein said core is a ceramic core.10. The core assembly as recited in claim 1 , wherein said spacer is made of platinum or a multi-metal composite.11. The core ...

AIRFOIL AERODYNAMICS

A method of manufacturing an airfoil. The method includes fixing the airfoil in a workpiece space, detecting a position of the airfoil in the workpiece space using a force-sensing element, and removing material from the airfoil to reduce a dimension of the airfoil. In various embodiments, detecting the position of the airfoil includes moving the force-sensing element across a surface of the airfoil. For example, the surface of the airfoil may be a first surface, wherein removing material from the airfoil to reduce the dimension of the airfoil comprises removing material from a second surface of the airfoil opposite the first surface. Removing material from the second surface of the airfoil may be performed without moving the force-sensing element across the second surface of the airfoil. 1. A method of manufacturing an airfoil of a gas turbine engine , the method comprising:fixing the airfoil in a workpiece space;detecting a position of the airfoil in the workpiece space using a force-sensing element; andremoving material from the airfoil to reduce a dimension of the airfoil.2. The method of claim 1 , wherein detecting the position of the airfoil comprises moving the force-sensing element across a surface of the airfoil.3. The method of claim 2 , wherein the surface of the airfoil is a first surface claim 2 , wherein removing material from the airfoil to reduce the dimension of the airfoil comprises removing material from a second surface of the airfoil opposite the first surface.4. The method of claim 3 , wherein removing material from the second surface of the airfoil is performed without moving the force-sensing element across the second surface of the airfoil.5. The method of claim 3 , wherein removing material from the second surface of the airfoil is performed substantially simultaneously as moving the force-sensing element across the first surface of the airfoil by using a clamp force-sensing element having a sensing portion and a cutting portion.6. The ...

AIRFOIL COOLING CIRCUITS

An airfoil includes leading and trailing edges; first and second sides extending from the leading edge to the trailing edge, each side having an exterior surface; a core passage located between the first and second sides and the leading and trailing edges; and a wall structure located between the core passage and the exterior surface of the first side. The wall structure includes a plurality of cooling fluid inlets communicating with the core passage for receiving cooling fluid from the core passage, a plurality of cooling fluid outlets on the exterior surface of the first side for expelling cooling fluid and forming a cooling film along the exterior surface of the first side, and a plurality of cooling passages communicating with the plurality of cooling fluid inlets and the plurality of cooling fluid outlets. At least a portion of one cooling passage extends between adjacent cooling fluid outlets. 1. A refractory metal core comprising: a downstream end wall;', 'an upstream end wall opposite the downstream end wall;', 'a first sidewall connecting the downstream end wall to the upstream end wall;', 'a second sidewall connecting the downstream end wall to the upstream end wall, the second sidewall opposite the first sidewall;', 'a plurality of primary curved tabs located between the downstream end wall and the upstream end wall and aligned between the first sidewall and the second sidewall, the plurality of primary curved tabs extending outwardly from the refractory metal sheet in a first direction;', 'a plurality of primary openings in the refractory metal sheet, wherein each one of the plurality of primary openings is proximate to one of the plurality of primary curved tabs;', 'a plurality of secondary curved tabs proximate the downstream endwall, the plurality of secondary curved tabs extending outwardly from the refractory metal sheet; and', 'a plurality of secondary openings in the refractory metal sheet located between the plurality of primary curved tabs and ...

Airfoil having panel with geometrically segmented coating

An airfoil includes an airfoil section that defines an airfoil profile. The airfoil section includes a distinct panel that forms a portion of the airfoil profile. The panel has a geometrically segmented coating section. The geometrically segmented coating section includes a wall that has an outer side. The outer side includes an array of cells, and there is a coating disposed in the array of cells.

AIRFOIL WITH GEOMETRICALLY SEGMENTED COATING SECTION

An airfoil includes an airfoil body that has a geometrically segmented coating section. The geometrically segmented coating section includes a wall having an outer side. The outer side has an array of cells, and there is a coating disposed in the array of cells. 1. An airfoil comprising: a wall having an outer side, the outer side including an array of cells, and', 'a coating disposed in the array of cells., 'an airfoil body having a geometrically segmented coating section, the geometrically segmented coating section including'}2. The airfoil as recited in claim 1 , wherein the cells are polygonal.3. The airfoil as recited in claim 1 , wherein the coating substantially fills the cells.4. The airfoil as recited in claim 1 , wherein the coating fully embeds the cells.5. The airfoil as recited in claim 1 , wherein the airfoil body is an airfoil section.6. The airfoil as recited in claim 5 , wherein geometrically segmented coating section is on a suction side of the airfoil section.7. The airfoil as recited in claim 5 , wherein geometrically segmented coating section is on a pressure side of the airfoil section.8. The airfoil as recited in claim 5 , wherein geometrically segmented coating section is on a portion of the airfoil section claim 5 , and an adjacent portion of the airfoil section includes the coating but excludes the cells.9. The airfoil as recited in claim 1 , wherein the airfoil body is a platform.10. The airfoil as recited in claim 1 , wherein the coating is substantially formed of ceramic.11. The airfoil as recited in claim 10 , wherein the coating has a laminar microstructure.12. The airfoil as recited in claim 11 , wherein the ceramic includes yttria and the wall is formed of an alloy.13. A gas turbine engine comprising:a compressor section;a combustor in fluid communication with the compressor section; anda turbine section in fluid communication with the combustor, a wall having an outer side, the outer side including an array of cells, and', 'a ...

GAS TURBINE ENGINE COMPONENT WITH DEGRADATION COOLING SCHEME

A gas turbine engine component includes a passage and a wall adjacent the passage. The wall includes a first side bordering the passage and a second side opposite the first side. The second side includes an array of cells. The wall also includes an array of channels. Each of the channels is located proximate a corresponding one of the cells. A coating is disposed over the cells. When the coating degrades the channels open to permit impingement air flow through the channel onto sidewalls of the cells. 1. A gas turbine engine component comprising:a passage; a first side bordering the passage,', 'a second side opposite the first side, the second side including an array of cells, and', 'an array of channels, each of the channels being located proximate a corresponding one of the cells; and, 'a wall adjacent the passage, the wall includinga coating disposed in the array of cells.2. The gas turbine engine component as recited in claim 1 , wherein each of the channels has a sacrificial plug blocking fluid communication through the respective channel from the passage to the corresponding one of the cells.3. The gas turbine engine component as recited in claim 2 , wherein the sacrificial plug is a thin bridge portion of the wall.4. The gas turbine engine component as recited in claim 2 , wherein the array of cells are defined by cell sidewalls having a cell wall thickness claim 2 , and the sacrificial plug has a thickness that is less than the cell wall thickness.5. The gas turbine engine component as recited in claim 2 , wherein the sacrificial plug is a thin bridge portion of the wall claim 2 , the array of cells are defined by cell sidewalls having a cell wall thickness claim 2 , and the thin bridge portion has a bridge thickness that is less than the cell wall thickness.6. The gas turbine engine component as recited in claim 1 , wherein the array of cells are defined by cell sidewalls claim 1 , and the channels slope along directions that intersect the cell sidewalls.7. ...

High density, modulus, and hardness amorphous carbon films at low pressure

Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY-COUPLED AND AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM

A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode. 1. In a capacitively-coupled plasma (CCP) processing system , a method of processing a substrate in a plasma processing chamber , the method comprising:supporting the substrate in the plasma processing chamber configured with an upper electrode disposed opposite a lower electrode;configuring an array of inductor coils arrangement having a plurality of inductor coils to inductively ignite plasma in a gap between the upper electrode and the lower electrode, the array of inductor coils arrangement being disposed above the upper electrode, wherein individual ones of at least a subset of the plurality of inductor coils are independently controllable with respect to at least one of phase and RF power;providing a set of magnetic cores, wherein each magnetic core is a single unitary magnetic core; andwinding each single unitary magnetic core with a coil.2. The method of claim 1 , further comprising at least configuring one radio frequency (RF) power source to capacitively ignite and sustain plasma between the upper electrode and the lower electrode.3. The method of claim 2 , wherein the RF power source has an RF frequency of at least one of about 2 MHz claim 2 , about 27 MHz claim 2 , and about 60 MHz.4. The method of claim 1 , further comprising disposing a set of magnetic connectors on the magnetic cores to complete magnetic circuits for adjacent pairs of bobbins claim 1 , wherein each magnetic core is a bobbin magnetically coupled by a ...

Thin seal for an engine

Aspects of the disclosure are directed to a seal configured to interface with at least a first component and a second component of a gas turbine engine. A method for forming the seal includes obtaining an ingot of a fine grained, or a coarse grained, or a columnar grained or a single crystal material from a precipitation hardened nickel base superalloy containing at least 40% by volume of the precipitate of the form Ni3(Al, X), where X is a metallic or refractory element, and processing the ingot to generate a sheet of the material, where the sheet has a thickness within a range of 0.010 inches and 0.050 inches inclusive.

TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants having low sticking coefficients in some embodiments. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition or plasma assisted chemical vapor deposition. 1. A method of forming an etched feature in dielectric material on a semiconductor substrate , the method comprising:(a) generating a first plasma comprising an etching reactant, exposing the substrate to the first plasma, and partially etching the feature in the dielectric material; (i) exposing the substrate to a first deposition reactant and allowing the first deposition reactant to adsorb onto the sidewalls of the feature;', '(ii) after (i), exposing the substrate to a second plasma comprising a second deposition reactant, wherein exposing the substrate to the second plasma drives a surface reaction between the first deposition reactant and the second deposition reactant, thereby forming the protective film on the sidewalls of the feature; and, '(b) after (a), depositing a protective film on sidewalls of the feature, wherein the protective film is deposited along substantially the entire depth of the feature through a plasma assisted atomic layer deposition reaction ...

TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in substantial preservation of a mask layer on the substrate. The protective coating may be deposited using particular reactants and/or reaction conditions that are unlikely to damage the mask layer. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition, a modified plasma assisted atomic layer deposition, or plasma assisted chemical vapor deposition. 1. A method of forming an etched feature in dielectric material on a semiconductor substrate , the method comprising:(a) generating an etching plasma comprising an etching reactant, exposing the substrate to the etching plasma, and partially etching the feature in the dielectric material, wherein the substrate comprises a mask layer;(b) after (a), depositing a protective film on sidewalls of the feature, wherein the protective film is deposited along substantially the entire depth of the feature, and wherein the mask layer is substantially preserved during (b); and(c) repeating (a)-(b) until the feature is etched to a final depth, wherein the protective film deposited in (b) substantially prevents lateral etch of the feature during (a), and wherein the feature has an aspect ratio of about 5 or greater at its final depth.2. The method of claim 1 , wherein depositing the protective film comprises:(i) flowing a first deposition reactant into a reaction ...

TECHNIQUE TO DEPOSIT METAL-CONTAINING SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features. 1. A method of forming an etched feature in a dielectric-containing stack on a semiconductor substrate , the method comprising:(a) generating a first plasma comprising an etching reactant, exposing the substrate to the first plasma, and partially etching the feature in the dielectric-containing stack;(b) after (a), depositing a protective film on sidewalls of the feature, the protective film comprising a metal, wherein the protective film is deposited along substantially the entire depth of the feature; and(c) repeating (a)-(b) until the feature is etched to a final depth, wherein the protective film deposited in (b) substantially prevents lateral etch of the feature during (a), and wherein the feature has an aspect ratio of about 5 or greater at its final depth.2. The method of claim 1 , wherein the protective film comprises a metal nitride claim 1 , a metal oxide claim 1 , a metal carbide claim 1 , a metal boride claim 1 , or a combination ...

TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants and/or reaction mechanisms that result in substantially complete sidewall coating at relatively low temperatures without the use of plasma. In some cases the protective coating is deposited using molecular layer deposition techniques. 1. A method of forming an etched feature in a stack comprising a dielectric material on a semiconductor substrate , the method comprising:(a) generating a first plasma comprising an etching reactant, exposing the substrate to the first plasma, and partially etching the feature in the stack; (i) exposing the substrate to a first reactant and allowing the first reactant to adsorb onto the substrate,', '(ii) exposing the substrate to a second reactant, wherein the first and second reactants react with one another to form the protective film, and', '(iii) repeating (i) and (ii) in a cyclic manner until the protective film reaches a target thickness, wherein the protective film is an organic polymeric film and is deposited along substantially the entire depth of the feature;, '(b) after (a), depositing a protective film on sidewalls of the feature by'}(c) repeating (a)-(b) until the feature is etched to a final depth, wherein the protective film deposited in (b) substantially prevents lateral etch of the feature during (a), and wherein the feature has an aspect ratio of about 5 ...

METHOD FOR FORMING SELF-ALIGNED CONTACTS/VIAS WITH HIGH CORNER SELECTIVITY

A method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarization layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer, forming a deposition layer on the hardmask and planarization layer; and etching the low-k dielectric layer masked by the deposition layer. 1. A method of etching self-aligned contact/via features in a dielectric layer disposed below a hardmask , which is disposed below a planarization layer , comprising at least one cycle , wherein each cycle comprises:thinning the planarization layer;forming a deposition layer on the hardmask and planarization layer; andetching the dielectric layer masked by the deposition layer.2. The method claim 1 , as recited in claim 1 , wherein the etching self-aligned contact/via features provides a dielectric layer to hardmask etch selectivity greater than 100:1.3. The method claim 2 , as recited in claim 2 , wherein the hardmask has a thickness no greater than 10 nm.4. The method claim 3 , as recited in claim 3 , wherein the hardmask is a metal containing hardmask and wherein the dielectric layer is of a low-k dielectric material.5. The method claim 4 , as recited in claim 4 , wherein the hardmask is over an antireflective layer that has a thickness no greater than 10 nm.6. The method claim 1 , as recited in claim 1 , wherein the etching the dielectric layer etches vias in the dielectric layer claim 1 , further comprising:removing the planarization layer; andetching trenches into the dielectric layer.7. The method claim 6 , as recited in claim 6 , wherein each cycle provides infinite hardmask corner selectivity.8. The method claim 7 , as recited in claim 7 , wherein each cycle of the multi-step sequence utilizes RF pulsing and gas pulsing.9. The method claim 8 , as recited in claim 8 , wherein the number of cycles ranges between 2 to 5 cycles claim 8 , inclusive.10. A method of forming features ...

CORE ASSEMBLY INCLUDING STUDDED SPACER

A core assembly for a casting system according to an exemplary aspect of the present disclosure includes, among other things, a core that includes a body and at least one hole formed through the body and a spacer that extends through the at least one hole. The spacer includes a stud portion and a chaplet portion configured to abut a surface of the body that circumscribes the at least one hole. 1. A core assembly for a casting system , comprising:a core that includes a body and at least one hole formed through said body;a spacer including a stud portion that extends through said at least one hole, and including a chaplet portion having a larger diameter than said at least one hole, said chaplet portion configured to abut a surface of said body that circumscribes said at least one hole; andwherein said spacer is a first spacer and a second spacer, said second spacer engaging said first spacer to sandwich said core between said chaplet portion of said first spacer and said chaplet portion of said second spacer.2. The core assembly as recited in claim 1 , wherein said core is a refractory metal core (RMC).3. The core assembly as recited in claim 1 , wherein said core is a ceramic core.4. The core assembly as recited in claim 1 , wherein said spacer is made of platinum or a multi-metal composite.5. The core assembly as recited in claim 1 , wherein said chaplet portion is conical.6. (canceled)7. The core assembly as recited in claim 26 , wherein said skirt is conical or rounded.8. The core assembly as recited in claim 1 , comprising at least one filleted cutout formed in either said stud portion or said chaplet portion.9. The core assembly as recited in claim 1 , wherein said stud portion includes at least one depth indicator.10. The core assembly as recited in claim 1 , wherein said chaplet portion is a bent portion of said spacer.11. The core assembly as recited in claim 1 , wherein said core is assembled to a second core and is spaced from said second core by a bumper ...

INTEGRATED ETCH/CLEAN FOR DIELECTRIC ETCH APPLICATIONS

The embodiments herein relate to methods and apparatus for etching a recessed feature in dielectric material. In various embodiments, a recessed feature is formed in two etching operations. The first etching operation partially etches the features and may take place in a reactor configured to produce a capacitively coupled plasma. The first etching operation may end before the underlying semiconductor material experiences substantial damage due to penetration of ions through the dielectric atop the semiconductor material. The second etching operation may take place in a reactor configured to produce an inductively coupled plasma. Both the first and second etching operations may themselves be multi-step, cyclic processes. 1. A method of etching a recessed feature in a semiconductor substrate , the method comprising:providing a substrate comprising dielectric material over semiconductor material to a first reaction chamber, wherein the recessed feature is to be formed in the dielectric material;performing a first etching operation in the first reaction chamber to etch the recessed feature in the dielectric material to a first depth, the first etching operation comprising exposing the substrate to a first plasma comprising a first set of ions with a mean free path in the dielectric material, the first plasma being a capacitively coupled plasma, wherein after the first etching operation, remaining dielectric material below the first etch depth and above the semiconductor material has a thickness that is at least about the mean free path of the first set of ions in the dielectric material;transferring the substrate from the first reaction chamber to a second reaction chamber;after transferring the substrate, performing a second etching operation in the second reaction chamber to etch the recessed feature to a final depth, wherein the second etching operation is an atomic layer etching operation that comprises exposing the substrate to a second plasma, the second plasma ...

TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants and/or reaction mechanisms that result in substantially complete sidewall coating at relatively low temperatures without the use of plasma. In some cases the protective coating is deposited using molecular layer deposition techniques. In certain implementations the protective coating is fluorinated. 1. A method of forming an etched feature in a stack comprising a dielectric material on a semiconductor substrate , the method comprising:(a) generating a first plasma comprising an etching reactant, exposing the substrate to the first plasma, and partially etching the feature in the stack; (i) exposing the substrate to a first reactant and allowing the first reactant to adsorb onto the substrate,', '(ii) exposing the substrate to a second reactant, wherein the first and second reactants react with one another to form the protective film, and', '(iii) repeating (i) and (ii) in a cyclic manner until the protective film reaches a target thickness, wherein the protective film is a fluorinated organic polymeric film; and, '(b) after (a), depositing a protective film on sidewalls of the feature by'}(c) repeating (a)-(b) until the feature is etched to a final depth, wherein the protective film deposited in (b) substantially prevents lateral etch of the feature during (a), and wherein the feature has an aspect ...

VARIABLE AREA TURBINE ARRANGEMENT WITH SECONDARY FLOW MODULATION

A variable area turbine arrangement according to an exemplary aspect of the present disclosure includes, among other things, a variable vane assembly and a secondary flow system associated with the variable vane assembly. Flow modulation of a cooling fluid through the secondary flow system is changed simultaneously with actuation of the variable vane assembly. 1. A variable area turbine arrangement , comprising:a variable vane assembly;a secondary flow system associated with said variable vane assembly; andwherein flow modulation of a cooling fluid through said secondary flow system is changed simultaneously with actuation of said variable vane assembly.2. The variable area turbine arrangement as recited in claim 1 , wherein said variable vane assembly includes a spindle having a window and said secondary flow system includes a tube having a port configured to align with said window.3. The variable area turbine arrangement as recited in claim 2 , wherein said spindle is configured to rotate about a spindle axis to move said window relative to said port.4. The variable area turbine arrangement as recited in claim 3 , wherein said spindle is configured to rotate between a first position in which said port is covered by said spindle and a second position in which said port at least partially aligns with said window to permit a portion of said cooling fluid to enter said port.5. The variable area turbine arrangement as recited in claim 1 , wherein said variable vane assembly includes a spindle having a window and said secondary flow system includes a TOBI assembly having at least one passage that is selectively exposed to said window to alter an amount of said cooling fluid communicated through said secondary flow system.6. The variable area turbine arrangement as recited in claim 1 , wherein said variable vane assembly includes a spindle and said secondary flow system includes a TOBI assembly having at least one exit nozzle vane linked to said spindle through a linkage ...

PLASMA-ENHANCED ETCHING IN AN AUGMENTED PLASMA PROCESSING SYSTEM

Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma. 1. A method for etching a substrate in a plasma processing chamber having a semi-barrier structure separating a primary plasma generating region from a secondary plasma generating region , comprising:providing a primary feed gas to the primary plasma generating region from outside the secondary plasma generating region;providing a secondary feed gas into the secondary plasma generating region, the secondary feed gas being different from the primary feed gas;generating a primary plasma from the primary feed gas;generating a secondary plasma from the secondary feed gas; andexposing the substrate to species in the primary plasma generating region to etch the substrate,wherein the semi-barrier structure is configured to allow neutral species to migrate from the secondary plasma generating region to the primary plasma generating region across the semi-barrier structure.2. The method of wherein the etch is a dielectric etch.3. The method of wherein a pressure in the secondary plasma generating region is greater than a pressure in the primary plasma generating region.4. The method of wherein the secondary feed gas is a non-polymer forming gas.5. The method of further comprising setting input parameters for the secondary plasma ...

Blade outer air seal cooling scheme

A cooling scheme for a blade outer air seal includes a perimeter cooling arrangement configured to convectively cool a perimeter of the blade outer air seal, and a core cooling arrangement configured to cool a central portion of the blade outer air seal through impingement cooling and to provide film cooling to an inner diameter face of the blade outer air seal.

COMPACT ADVANCED PASSIVE TIP CLEARANCE CONTROL

A section of a gas turbine engine includes a rotor blade designed to rotate about an axis. The section also includes a case positioned radially outward from the rotor blade and extending circumferentially about the axis. The section also includes a control ring being annular, positioned radially inward from the case and designed to move radially relative to the case. The section also includes a segmented blade outer air seal (BOAS) including a plurality of BOAS segments each being positioned radially outward from the rotor blade, movably coupled to the control ring, and designed to move circumferentially relative to each other such that a circumferential gap between each of the plurality of BOAS segments changes in size in response to a temperature change in the section of the gas turbine engine. 1. A section of a gas turbine engine , comprising:a rotor blade configured to rotate about an axis;a case positioned radially outward from the rotor blade and extending circumferentially about the axis;a control ring being annular, positioned radially inward from the case, and configured to move radially relative to the case; anda segmented blade outer air seal (BOAS) including a plurality of BOAS segments each being positioned radially outward from the rotor blade, movably coupled to the control ring, and configured to move circumferentially relative to each other such that a circumferential gap between each of the plurality of BOAS segments changes in size in response to a temperature change in the section of the gas turbine engine.2. The section of claim 1 , further comprising a spring positioned radially between the segmented BOAS and the control ring and configured to exert a radially inward force on the segmented BOAS towards the rotor blade.3. The section of claim 1 , further comprising a circumferential locking tab coupled to the case claim 1 , slidably coupled to the segmented BOAS claim 1 , and configured to resist circumferential movement of the segmented BOAS ...

Thin seal for an engine

Aspects of the disclosure are directed to a seal configured to interface with at least a first component and a second component of a gas turbine engine. A method for forming the seal includes obtaining an ingot of a fine grained, or a coarse grained, or a columnar grained or a single crystal material from a precipitation hardened nickel base superalloy containing at least 40% by volume of the precipitate of the form Ni3(Al, X), where X is a metallic or refractory element, and processing the ingot to generate a sheet of the material, where the sheet has a thickness within a range of 0.010 inches and 0.050 inches inclusive.

VARIABLE VANE AND SEAL ARRANGEMENT

One exemplary embodiment of this disclosure relates to a system including an airfoil having a static portion, a moveable portion, and a seal between the static portion and the moveable portion. The seal is moveable separate from the static portion and the moveable portion. 1. A system , comprising:an airfoil having a static portion, a moveable portion, and a seal between the static portion and the moveable portion, the seal moveable separate from the static portion and the moveable portion.2. The system as recited in claim 1 , wherein the seal is retained against the moveable portion.3. The system as recited in claim 2 , wherein the seal is retained against moveable portion at least partially by a fluid.4. The system as recited in claim 2 , wherein the seal is resiliently retained against the moveable portion at least partially by a spring.5. The system as recited in claim 1 , wherein the static portion includes a seat claim 1 , the seal partially received in the seat.6. The system as recited in claim 5 , wherein the seal includes a fore surface and an aft surface claim 5 , the aft surface being convex.7. The system as recited in claim 6 , wherein the aft surface abuts a leading surface of the moveable portion claim 6 , the leading surface being convex.8. The system as recited in claim 5 , wherein the seal includes a fore lobe and an aft lobe claim 5 , the fore lobe received in the seat claim 5 , and the aft lobe received in a socket formed in the moveable portion.9. The system as recited in claim 8 , wherein the seal maintained in position by a pressure differential between a pressure side and a suction side of the airfoil.10. The system as recited in claim 5 , wherein a spring is received in the seat claim 5 , the seal resiliently retained in the direction of the moveable portion by the spring.11. The system as recited in claim 10 , wherein the spring is one of a wave spring claim 10 , a W-spring claim 10 , and an X-spring.12. The system as recited in claim 1 , ...

Gas additives for sidewall passivation during high aspect ratio cryogenic etch

Methods and apparatus for etching a feature in a substrate are provided. The feature may be etched in dielectric material, which may or may not be provided in a stack of materials. The substrate may be etched using cryogenic temperatures and particular classes of reactants. In various examples, the substrate may be etched at a temperature of about −20° C. or lower, using a mixture of reactants that includes at least one reactant that is an iodine-containing fluorocarbon, an iodine-containing fluoride, a bromine-containing fluorocarbon, a sulfur-containing reactant, or one of another select set of reactants. In various embodiments, the combination of low processing temperature with particular reactants results in very effective bow control.

METHOD FOR FORMING SELF-ALIGNED CONTACTS/VIAS WITH HIGH CORNER SELECTIVITY

A method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarization layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer, forming a deposition layer on the hardmask and planarization layer; and etching the low-k dielectric layer masked by the deposition layer. 1. An apparatus for etching self-aligned contact/via features in a dielectric layer disposed below a hardmask , which is disposed below a planarization layer , comprising: a chamber wall forming a plasma processing chamber enclosure;', 'a substrate support for supporting a wafer within the plasma processing chamber enclosure;', 'a pressure regulator for regulating the pressure in the plasma processing chamber enclosure;', 'at least one electrode for providing power to the plasma processing chamber enclosure for sustaining a plasma;', 'a gas inlet for providing gas into the plasma processing chamber enclosure; and', 'a gas outlet for exhausting gas from the plasma processing chamber enclosure;, 'a plasma processing chamber, comprisingat least one RF power source electrically connected to the at least one electrode;a gas source in fluid connection with the gas inlet, the gas source comprising: and at least one processor; and', computer readable code for flowing a planarization layer thinning gas from the gas source into the plasma processing chamber;', 'computer readable code for transforming the planarization layer thinning gas into a planarization layer thinning plasma, which thins the planarization layer;', 'computer readable code for stopping the flow of the planarization layer thinning gas;', 'computer readable code for flowing a deposition gas from the gas source into the plasma processing chamber;', 'computer readable code for transforming the deposition gas into a deposition plasma, which forms a deposition layer on the hardmask and planarization layer;', 'computer readable code ...

Gas Turbine Engine Core Utilized in Both Commercial and Military Engines

A method of manufacturing a military engine includes the steps of designing a commercial engine core, including a combustor, a high pressure compressor driven by a high pressure turbine, and a low pressure turbine designed to drive a low pressure compressor, and a fan through a gear reduction. A high speed fan is attached to the low pressure turbine, such that the combustor, high pressure compressor, low and high pressure turbines from an engine designed for commercial purposes is utilized for military purposes. A gas turbine engine is also disclosed. 1. A method of manufacturing a military engine comprising the steps of:designing a commercial engine core, including a combustor, a high pressure compressor driven by a high pressure turbine, and a low pressure turbine designed to drive a low pressure compressor, and a fan through a gear reduction;attaching a high speed fan to said low pressure turbine, such that the combustor, high pressure compressor, low and high pressure turbines form an engine designed for commercial purposes is utilized for military purposes; andsaid commercial engine core being designed as a complete commercial engine, with the complete commercial engine having a low corrected fan tip speed of less than 1150 ft/second, and the engine to be utilized for military purposes having a low corrected fan tip speed of between about 1300-1550 ft/second.2. The method as set forth in claim 1 , wherein a core engine housing is provided with insulation on an outer surface.3. The method as set forth in claim 1 , wherein the fan designed with the complete commercial engine delivers air into a bypass duct claim 1 , and into a compressor claim 1 , and a bypass ratio is defined as a ratio of the volume of air delivered into the bypass duct compared to the volume of air delivered into the compressor claim 1 , with the bypass ratio for the complete commercial engine being greater than about 10 claim 1 , and a bypass ratio for the engine utilized for military ...

SELECTIVE ATTACHMENT TO ENHANCE SiO2:SiNx ETCH SELECTIVITY

Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.

System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas

A method of etching a semiconductor wafer including injecting a source gas mixture into a process chamber including injecting the source gas mixture into a multiple hollow cathode cavities in a top electrode of the process chamber and generating a plasma in each one of the hollow cathode cavities. Generating the plasma in the hollow cathode cavities includes applying a first biasing signal to the hollow cathode cavities. The generated plasma or activated species is output from corresponding outlets of each of the hollow cathode cavities into a wafer processing region in the process chamber. The wafer processing region is located between the outlets of the hollow cathode cavities and a surface to be etched. An etchant gas mixture is injected into the wafer processing region. A plasma can also be supported and/or generated in the wafer processing region. The etchant gas mixture is injected through multiple injection ports in the top electrode such that the etchant gas mixture mixes with the plasma output from the outlets of the hollow cathode cavities. The etchant gas mixture is substantially prevented from flowing into the outlets of the hollow cathode cavities by the plasma flowing from the outlets of hollow cathode cavities. Mixing the etchant gas mixture and the output from the hollow cathode cavities generates a desired chemical species in the wafer processing region and the surface to be etched can be etched. A system for generating an etching species is also describer herein.

High aspect ratio dielectric etch with chlorine

Various embodiments herein relate to methods and apparatus for etching recessed features on a semiconductor substrate. The techniques described herein can be used to form high quality recessed features with a substantially vertical profile, low bowing, low twisting, and highly circular features. These high quality results can be achieved with a high degree of selectivity and a relatively high etch rate. In various embodiments, etching involves exposing the substrate to plasma generated from a processing gas that includes a chlorine source, a carbon source, a hydrogen source, and a fluorine source. The chlorine source may have particular properties. In some cases, particular chlorine sources may be used. Etching typically occurs at low temperatures, for example at about 25C or lower.

Refractory metal core for cast seal slots in turbine vane shrouds

A refractory metal core assembly for casting a seal slot in a turbine engine component. The first core plate (32) has a slot (50) and the second core plate (34) has a mating portion (52) which fits into the slot (50)

Reduction of feature critical dimensions

Technique to deposit sidewall passivation for high aspect ratio cylinder etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants having low sticking coefficients in some embodiments. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition or plasma assisted chemical vapor deposition.

Methods for determining the endpoint of a cleaning or conditioning process in a plasma processing system

Variable area turbine vane arrangement

A ring vane nozzle (30) for a gas turbine engine includes a multiple of fixed turbine vanes (38) between an inner vane ring (34) and an outer vane ring (32) and a multiple of rotational turbine vanes (40) between the inner vane ring (34) and the outer vane ring (32), each of the rotational turbine vanes (40) rotatable about an axis of rotation (62).

Turbine airfoil cooling flow particle separator

A vane assembly for a turbine engine comprising a plurality of vanes (10) each comprising a pressure side (3) wherein the pressure side (3) of at least one of the plurality of vanes (10) comprises at least one opening (2) extending through the pressure side (3) into an interior portion (4) of the at least one of the plurality of vanes (10).

Reduction of feature critical dimensions

A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

Turbomachine

In-situ plug fill

A method for forming damascene features in a dielectric layer over a barrier layer over a substrate is provided. A plurality of vias are etched in the dielectric layer to the barrier layer with a plasma etching process in the plasma processing chamber. A patterned photoresist layer is formed with a trench pattern. Within a single plasma process chamber a combination via plug deposition to form plugs in the vias over the barrier layer and trench etch is provided.

Variable area turbine arrangement with secondary flow modulation

A variable area turbine arrangement according to an exemplary aspect of the present disclosure includes, among other things, a variable vane assembly and a secondary flow system associated with the variable vane assembly. Flow modulation of a cooling fluid through the secondary flow system is changed simultaneously with actuation of the variable vane assembly.

High aspect ratio etch with infinite selectivity

Provided herein are methods and apparatus for processing a substrate by exposing the substrate to plasma to simultaneously (i) etch features in an underlying material (e.g., which includes one or more dielectric materials), and (ii) deposit a upper mask protector layer on a mask positioned over the dielectric material, where the upper mask protector layer forms on top of the mask in a selective vertically-oriented directional deposition. Such methods and apparatus may be used to achieve infinite etch selectivity, even when etching high aspect ratio features.

Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch

Methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate are provided. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective film on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective film may be deposited under different conditions (e.g., pressure, duration of reactant delivery, duration of plasma exposure, RF power, and/or RF duty cycle, etc.) in different deposition operations. Such conditions may affect the degree of conformality at which the protective film forms. In various embodiments, one or more protective films may be sub-conformal. In these or other embodiments, one or more other protective films may be conformal.

Etch with striation control

A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.

Turbine airfoil cooling flow particle separator

Methods and apparatus for a hybrid capacitively-coupled and an inductively-coupled plasma processing system

A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.

Blade outer air seal hybrid casting core

Method for low-k dielectric etch with reduced damage

A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Apparatus for measuring a set of electrical characteristics in a plasma

Variable area turbine arrangement with secondary flow modulation

A variable area turbine arrangement according to an exemplary aspect of the present disclosure includes, among other things, a variable vane assembly and a secondary flow system associated with the variable vane assembly. Flow modulation of a cooling fluid through the secondary flow system is changed simultaneously with actuation of the variable vane assembly.

Method of manufacturing an airfoil with a thin trailing edge

A method (390; 490; 590) of manufacturing an airfoil (100). The method (390; 490; 590) includes fixing the airfoil (100) in a workpiece space (82), detecting a position of the airfoil (100) in the workpiece space (82) using a force-sensing element (84), and removing material from the airfoil (100) to reduce a dimension of the airfoil (100). In various embodiments, detecting the position of the airfoil (100) includes moving the force-sensing element (84) across a surface of the airfoil (100). For example, the surface of the airfoil (100) may be a first surface, wherein removing material from the airfoil (100) to reduce the dimension of the airfoil (100) comprises removing material from a second surface of the airfoil (100) opposite the first surface. Removing material from the second surface of the airfoil (100) may be performed without moving the force-sensing element (84) across the second surface of the airfoil (100).

Blade outer air seal cooling scheme

A cooling scheme for a blade outer air seal includes a perimeter cooling arrangement configured to convectively cool a perimeter of the blade outer air seal, and a core cooling arrangement configured to cool a central portion of the blade outer air seal through impingement cooling and to provide film cooling to an inner diameter face of the blade outer air seal.

Filter system for blade outer air seal

A gas turbine engine component having a filter mounted adjacent an impingement cavity to filter particles out of a secondary cooling airflow outboard of a cooling channel in communication with the secondary cooling airflow.

Turbine engine component manufacture methods

A cooled turbine engine component is made by providing first and second pieces respectively having first and second surfaces. At least one circuit is formed in at least one of the first and second surfaces. A first plurality of apertures is provided in the first piece to form inlets to the at least one circuit. A second plurality of apertures is provided in the second piece to form outlets to the at least one circuit. A combination of the first and second pieces is assembled and integrated.

Stabilized photoresist structure for etching process

A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

Refractory metal core for integrally cast exit trench

A refractory metal core (10') for use in casting a turbine engine part (12') has a main portion (16') and a plurality of tabs (18') extending from the main portion (16'). An end portion (22') has a first edge which joins together the plurality of tabs (18') and a second edge, opposed to the first edge, located internally of an exterior boundary (14') of the cast part (12').

Refractory metal core assembly

A process for casting a turbine engine component is provided. The process comprises the steps of placing a refractory core assembly comprising two intersecting plates in a die, encapsulating the refractory core assembly in a wax pattern having the form of the turbine engine component, forming a ceramic shell mold about the wax pattern, removing the wax pattern, and pouring molten material into the ceramic shell mold to form the turbine engine component.

Platformless turbine blade

A turbine blade rotor assembly is disclosed for a gas turbine engine. The assembly includes a rotor (12) having nickel alloy turbine blades (14) secured thereto. Each of the blades (14) includes a root (18) and an airfoil (20). The roots (18) are supported by the rotor (12). A ceramic matrix composite platform (34) separate from the turbine blades (14) is supported between each pair of the turbine blades (14) adjacent to the airfoils (20).

Seal for gas turbine engine component

A gas turbine engine component includes a pressurized fluid source, an airfoil, and a seal member for selectively providing sealing at an end of the airfoil. The seal member includes a stowed position for non-sealing and a deployed position for sealing. The seal member is operatively connected with a pressurized fluid source for moving the seal member between the stowed position and the deployed position.

Methods for running a high density plasma etcher to achieve reduced transistor device damage

Disclosed are methods and systems for etching dielectric layers in a high density plasma etcher. A method includes providing a wafer having a photoresist mask over a dielectric layer in order to define at least one contact via hole or open area that is electrically interconnected down to the silicon substrate of the wafer. The method then proceeds to inserting the wafer into the high density plasma etcher and pulsed application a TCP power source of the high density plasma etcher. The pulsed application includes ascertaining a desired etch performance characteristic, which includes photoresist selectivity and etch rate which is associated with a continuous wave application of the TCP source. Then, selecting a duty cycle of the pulsed application of the TCP source and scaling a peak power of the pulsed application of the TCP source in order to match a cycle-averaged power that would be delivered by the continuous wave application of the TCP source. The pulsed application of the TCP power source is configured to etch through the dielectric layer to at least one contact via hole or open area while substantially reducing damage to the transistor gate oxides of the transistor devices.

Three-dimensionally contoured vane end wall for an adjustable turbine vane assembly

Etch features with reduced line edge roughness

A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less than 100 nm is formed over the sidewalls of the photoresist features by performing for a plurality of cycles. Each cycle comprises depositing a layer on the photoresist layer wherein the deposited layer has a thickness between a monolayer to 20 nm. Features are etched into the layer through the photoresist features. The photoresist layer and sidewall layer are stripped.

Magnetic enhancement for mechanical confinement of plasma

A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.

Thermal gradiant tolerant turbomachine coupling member

An exemplary turbomachine securing apparatus includes a coupling member that couples a first component to a second component within a turbomachine. The first component and the second component are both non-rotating components during operation of the turbomachine. The coupling member limiting relative circumferential movement between the first component and the second component, and permitting relative radial movement.

Selective attachment to enhance sio2:sinx etch selectivity

Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.

High density, modulus, and hardness amorphous carbon films at low pressure

Organochloride etch with passivation and profile control

A method of etching recessed features in stack with a silicon containing layer below a mask and over a wafer on a substrate support is provided. An etch gas comprising a carbon source, a fluorine source, and an organochloride source selected from the group consisting of carbon tetrachloride (CCI 4 ), C x H y Cl z (where x>0 and z > 0), and combinations thereof, is provided. The etch gas is formed into a plasma. The stack is exposed to the plasma to etch recessed features into the stack.

Passivation chemistry for plasma etching

Various embodiments herein relate to methods and apparatus for etching a recessed feature in a material on a substrate. For example, the methods may include (a) flowing a gas mixture into a processing chamber, where the gas mixture includes an etch component and a passivation component, and where the passivation component includes particular elements and/or species and/or is provided under particular conditions; (b) generating a plasma from the gas mixture in the processing chamber; and (c) exposing the substrate to the plasma and etching the recessed feature in the material on the substrate. In many cases, the material being etched on the substrate includes dielectric material and/or an electrically conductive material.

Sidewall passivation using aldehyde or isocyanate chemistry for high aspect ratio etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along the sidewalls. In some cases, the protective coating is deposited using molecular layer deposition techniques. The protective coating may be deposited using particular reactants that result in relatively complete sidewall coating at relatively low temperatures. In some implementations, one or more of the reactants include an aldehyde functional group. In some implementations, one or more of the reactants include an isocyanate functional group.

High aspect ratio etch using modulation of rf powers of various frequencies

A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).