Microelectronic modules with sinter-bonded heat dissipation structures and methods for the fabrication thereof

Methods for producing high thermal performance microelectronic modules containing sinter-bonded heat dissipation structures. In one embodiment, the method includes embedding a sinter-bonded heat dissipation structure in a module substrate. The step of embedding may entail applying a sinter precursor material containing metal particles into a cavity provided in the module substrate, and subsequently sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body bonded to the module substrate. A microelectronic device and a heatsink are then attached to the module substrate before, after, or concurrent with sintering such that the heatsink is thermally coupled to the microelectronic device through the sinter-bonded heat dissipation structure. In certain embodiments, the microelectronic device may be bonded to the module substrate at a location overlying the thermally-conductive structure.

Microelectronic modules with sinter-bonded heat dissipation structures and methods for the fabrication thereof

High thermal performance microelectronic modules containing sinter-bonded heat dissipation structures are provided, as are methods for the fabrication thereof. In various embodiments, the method includes the steps or processes of providing a module substrate, such as a circuit board, including a cavity having metallized sidewalls. A sinter-bonded heat dissipation structure is formed within the cavity. The sintered-bonded heat dissipation structure is formed, at least in part, by inserting a prefabricated thermally-conductive body, such as a metallic (e.g., copper) coin into the cavity. A sinter precursor material (e.g., a metal particle-containing paste) is dispensed or otherwise applied into the cavity and onto surfaces of the prefabricated thermally-conductive body before, after, or concurrent with insertion of the prefabricated thermally-conductive body. The sinter precursor material is then sintered at a maximum processing temperature to produce a sinter bond layer bonding the prefabricated ...

Impedance compensation system with microstrip and slotline coupling and controllable capacitance

Embodiments of a circuit, system, and method are disclosed. In an embodiment, a circuit includes a first microstrip transmission line, a second microstrip transmission line, and a slotline formation, wherein the slotline formation extends between the first microstrip transmission line and the second microstrip transmission line so that the slotline formation is configured to electromagnetically couple the first microstrip transmission line to the second microstrip transmission line during operation of the circuit. In addition, the circuit includes at least one controllable capacitance circuit electrically connected to at least one of the first microstrip transmission line and the second microstrip transmission line, wherein a magnitude of capacitance of the at least one controllable capacitance circuit is controllable (e.g., in response to a capacitance control signal received at a control interface).

POWER AMPLIFIER MODULES INCLUDING TOPSIDE COOLING INTERFACES AND METHODS FOR THE FABRICATION THEREOF

Power amplifier modules (PAMs) having topside cooling interfaces are disclosed, as are methods for fabricating such PAMs. In embodiments, the method includes attaching the RF power die to a die support-surface of a module substrate. The RF power die is attached to the module substrate in an inverted orientation such that a frontside of the RF power die faces the module substrate. When attaching the RF power die to the module substrate, a frontside input/output interface of the RF power die is electrically coupled to corresponding substrate interconnect features of the module substrate. The method further includes providing a primary heat extraction path extending from the transistor channel of the RF power die to a topside cooling interface of the PAM in a direction opposite the module substrate.

Microelectronic components having integrated heat dissipation posts, systems including the same, and methods for the fabrication thereof

Microelectronic systems having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the step or process of obtaining a microelectronic component from which a heat dissipation post projects. The microelectronic component is placed or seated on a substrate, such as a multilayer printed circuit board, having a socket cavity therein. The heat dissipation post is received in the socket cavity as the microelectronic component is seated on the substrate. Concurrent with or after seating the microelectronic component, the microelectronic component and the heat dissipation post are bonded to the substrate. In certain embodiments, the heat dissipation post may be dimensioned or sized such that, when the microelectronic component is seated on the substrate, the heat dissipation post occupies a volumetric majority of the socket cavity.

Microelectronic modules with sinter-bonded heat dissipation structures and methods for the fabrication thereof

Methods for producing high thermal performance microelectronic modules containing sinter-bonded heat dissipation structures. In one embodiment, the method includes embedding a sinter-bonded heat dissipation structure in a module substrate. The step of embedding may entail applying a sinter precursor material containing metal particles into a cavity provided in the module substrate, and subsequently sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body bonded to the module substrate. A microelectronic device and a heatsink are then attached to the module substrate before, after, or concurrent with sintering such that the heatsink is thermally coupled to the microelectronic device through the sinter-bonded heat dissipation structure. In certain embodiments, the microelectronic device may be bonded to the module substrate at a location overlying the thermally-conductive structure.

Microelectronic systems containing embedded heat dissipation structures and methods for the fabrication thereof

Microelectronic systems having embedded heat dissipation structures are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the steps or processes of obtaining a substrate having a tunnel formed therethrough, attaching a microelectronic component to a frontside of the substrate at a location covering the tunnel, and producing an embedded heat dissipation structure at least partially within the tunnel after attaching the microelectronic component to the substrate. The step of producing may include application of a bond layer precursor material into the tunnel and onto the microelectronic component from a backside of the substrate. The bond layer precursor material may then be subjected to sintering process or otherwise cured to form a thermally-conductive component bond layer in contact with the microelectronic component.

Delayed and sustained drug release

The invention relates to the controlled release of preparations of therapeutic agents, for example a steroid; formulations comprising said preparations; and the use of said formulations to treat diseases such as those diseases which would benefit from steroid treatment.

Microelectronic systems containing embedded heat dissipation structures and methods for the fabrication thereof

Microelectronic systems having embedded heat dissipation structures are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the steps or processes of obtaining a substrate having a tunnel formed therethrough, attaching a microelectronic component to a frontside of the substrate at a location covering the tunnel, and producing an embedded heat dissipation structure at least partially within the tunnel after attaching the microelectronic component to the substrate. The step of producing may include application of a bond layer precursor material into the tunnel and onto the microelectronic component from a backside of the substrate. The bond layer precursor material may then be subjected to sintering process or otherwise cured to form a thermally-conductive component bond layer in contact with the microelectronic component.

Microelectronic components having integrated heat dissipation posts and systems including the same

Microelectronic systems and components having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems and components. In various embodiments, the microelectronic system includes a substrate having a frontside, a socket cavity, and inner cavity sidewalls defining the socket cavity. A microelectronic component is seated on the frontside of the substrate such that a heat dissipation post, which projects from the microelectronic component, is received in the socket cavity and separated from the inner cavity sidewalls by a peripheral clearance. The microelectronic system further includes a bond layer contacting the inner cavity sidewalls, contacting an outer peripheral portion of the heat dissipation post, and at least partially filling the peripheral clearance.

LINEAR IMPEDANCE COMPENSATION SYSTEM WITH MICROSTRIP AND SLOTLINE COUPLING AND CONTROLLABLE CAPACITANCE

Embodiments of a circuit, system, and method are disclosed. In an embodiment, a circuit includes first and second microstrip transmission lines. The first and second microstrip transmission lines include linearly arranged conductive strips on the circuit and a slotline formation extends between the first microstrip transmission line and the second microstrip transmission line so that the slotline formation is configured to electromagnetically couple the first microstrip transmission line to the second microstrip transmission line during operation of the circuit. In addition, the circuit includes at least one controllable capacitance circuit electrically connected to at least one of the first microstrip transmission line and the second microstrip transmission line, where a magnitude of a capacitance value of the at least one controllable capacitance circuit (e.g., including a barium strontium titanate (BST) capacitor) is controllable (e.g., in response to a capacitance control signal received ...

Power amplifier modules including topside cooling interfaces and methods for the fabrication thereof

Power amplifier modules (PAMs) having topside cooling interfaces are disclosed, as are methods for fabricating such PAMs. In embodiments, the method includes attaching the RF power die to a die support-surface of a module substrate. The RF power die is attached to the module substrate in an inverted orientation such that a frontside of the RF power die faces the module substrate. When attaching the RF power die to the module substrate, a frontside input/output interface of the RF power die is electrically coupled to corresponding substrate interconnect features of the module substrate. The method further includes providing a primary heat extraction path extending from the transistor channel of the RF power die to a topside cooling interface of the PAM in a direction opposite the module substrate.

IMPEDANCE COMPENSATION SYSTEM WITH MICROSTRIP AND SLOTLINE COUPLING AND CONTROLLABLE CAPACITANCE

Embodiments of a circuit, system, and method are disclosed. In an embodiment, a circuit includes a first microstrip transmission line, a second microstrip transmission line, and a slotline formation, wherein the slotline formation extends between the first microstrip transmission line and the second microstrip transmission line so that the slotline formation is configured to electromagnetically couple the first microstrip transmission line to the second microstrip transmission line during operation of the circuit. In addition, the circuit includes at least one controllable capacitance circuit electrically connected to at least one of the first microstrip transmission line and the second microstrip transmission line, wherein a magnitude of capacitance of the at least one controllable capacitance circuit is controllable (e.g., in response to a capacitance control signal received at a control interface). 1. A circuit comprising:a first microstrip transmission line;a second microstrip transmission line;a slotline formation, wherein the slotline formation extends between the first microstrip transmission line and the second microstrip transmission line to so that the slotline formation is configured to electromagnetically couple the first microstrip transmission line to the second microstrip transmission line during operation of the circuit; andat least one controllable capacitance circuit electrically connected to at least one of the first microstrip transmission line and the second microstrip transmission line, wherein a magnitude of capacitance of the at least one controllable capacitance circuit is controllable.2. The circuit of claim 1 , wherein the at least one controllable capacitance circuit comprises:a first controllable capacitance circuit electrically connected to the first microstrip transmission line and including a first control interface, wherein a magnitude of capacitance of the first controllable capacitance circuit is controllable in response to a first ...

Linear impedance compensation system with microstrip and slotline coupling and controllable capacitance

Embodiments of a circuit, system, and method are disclosed. In an embodiment, a circuit includes first and second microstrip transmission lines. The first and second microstrip transmission lines include linearly arranged conductive strips on the circuit and a slotline formation extends between the first microstrip transmission line and the second microstrip transmission line so that the slotline formation is configured to electromagnetically couple the first microstrip transmission line to the second microstrip transmission line during operation of the circuit. In addition, the circuit includes at least one controllable capacitance circuit electrically connected to at least one of the first microstrip transmission line and the second microstrip transmission line, where a magnitude of a capacitance value of the at least one controllable capacitance circuit (e.g., including a barium strontium titanate (BST) capacitor) is controllable (e.g., in response to a capacitance control signal received at a control interface).

Amplifier power combiner with slotline impedance transformer

Systems and methods for communicating electromagnetic signals and/or power and, more particularly for example, to power combiners and similar systems and methods for communicating electromagnetic signals and/or power generated by amplifiers to loads, are described herein. In at least example embodiment, a power amplifier system includes first and second amplifier circuits and a power combiner circuit coupled to each of the first and second amplifier circuits and having a first microstrip transmission line component, a slotline formation, and an additional coupling component that is capable of being at least indirectly coupled to a load, where the first microstrip transmission line component and additional coupling component are electromagnetically coupled by way of the slotline formation.

MICROELECTRONIC MODULES WITH SINTER-BONDED HEAT DISSIPATION STRUCTURES AND METHODS FOR THE FABRICATION THEREOF

Methods for producing high thermal performance microelectronic modules containing sinter-bonded heat dissipation structures. In one embodiment, the method includes embedding a sinter-bonded heat dissipation structure in a module substrate. The step of embedding may entail applying a sinter precursor material containing metal particles into a cavity provided in the module substrate, and subsequently sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body bonded to the module substrate. A microelectronic device and a heatsink are then attached to the module substrate before, after, or concurrent with sintering such that the heatsink is thermally coupled to the microelectronic device through the sinter-bonded heat dissipation structure. In certain embodiments, the microelectronic device may be bonded to the module substrate at a location overlying the thermally-conductive structure. 1. A method for fabricating a microelectronic module , comprising: applying a sinter precursor material containing metal particles into a cavity provided in the module substrate; and', 'sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body bonded to the module substrate, the maximum processing temperature ranging between 170 and 300 degrees Celsius; and, 'embedding a sinter-bonded heat dissipation structure in a module substrate, embedding comprisingattaching a microelectronic device and a heatsink to the module substrate, the heatsink thermally coupled to the microelectronic device through the sinter-bonded heat dissipation structure.2. The method of wherein a common sintering process is carried-out to produce the sintered metal body claim 1 , while concurrently attaching the microelectronic device and the heatsink to the module substrate.3. The method of wherein the heatsink comprises a metal ...

Microelectronic modules with sinter-bonded heat dissipation structures and methods for the fabrication thereof

High thermal performance microelectronic modules containing sinter-bonded heat dissipation structures are provided, as are methods for the fabrication thereof. In various embodiments, the method includes the steps or processes of providing a module substrate, such as a circuit board, including a cavity having metallized sidewalls. A sinter-bonded heat dissipation structure is formed within the cavity. The sintered-bonded heat dissipation structure is formed, at least in part, by inserting a prefabricated thermally-conductive body, such as a metallic (e.g., copper) coin into the cavity. A sinter precursor material (e.g., a metal particle-containing paste) is dispensed or otherwise applied into the cavity and onto surfaces of the prefabricated thermally-conductive body before, after, or concurrent with insertion of the prefabricated thermally-conductive body. The sinter precursor material is then sintered at a maximum processing temperature to produce a sinter bond layer bonding the prefabricated thermally-conductive body to the metallized sidewalls of the module substrate.

AMPLIFIER POWER COMBINER WITH SLOTLINE IMPEDANCE TRANSFORMER

Systems and methods for communicating electromagnetic signals and/or power and, more particularly for example, to power combiners and similar systems and methods for communicating electromagnetic signals and/or power generated by amplifiers to loads, are described herein. In at least example embodiment, a power amplifier system includes first and second amplifier circuits and a power combiner circuit coupled to each of the first and second amplifier circuits and having a first microstrip transmission line component, a slotline formation, and an additional coupling component that is capable of being at least indirectly coupled to a load, where the first microstrip transmission line component and additional coupling component are electromagnetically coupled by way of the slotline formation. 1. A power amplifier system comprising:a first amplifier circuit having a first output terminal;a second amplifier circuit having a second output terminal; anda power combiner circuit coupled to each of the first and second amplifier circuits and having a first microstrip transmission line component, a slotline formation, and an additional coupling component that is capable of being at least indirectly coupled to a load,wherein first and second locations along the first microstrip transmission line component are respectively short-circuited to the first and second output terminals; andwherein the slotline formation extends between a first position proximate the first microstrip transmission line component and a second position proximate the additional coupling component; andwherein the first microstrip transmission line component and additional coupling component are electromagnetically coupled by way of the slotline formation.2. The power amplifier system of claim 1 , wherein the additional coupling component includes a second microstrip transmission line component.3. The power amplifier system of claim 2 , further comprising a printed circuit board (PCB) claim 2 , wherein the ...

AMPLIFIER WITH ADJUSTABLE LOAD

A device includes a Doherty amplifier having a carrier path and a peaking path. The Doherty amplifier includes a carrier amplifier configured to amplify a signal received from the carrier path and a peaking amplifier configured to amplify a signal received from the peaking path. The device includes a variable impedance coupled to an output of the Doherty amplifier, and a controller configured to set the variable impedance to a first impedance when an output power level of the Doherty amplifier is less than a threshold and to a second impedance when the output power level of the Doherty amplifier is above the threshold. 1. A device , comprising:a Doherty amplifier having a carrier path and a peaking path, the Doherty amplifier including a carrier amplifier configured to amplify a signal received from the carrier path and a peaking amplifier configured to amplify a signal received from the peaking path;a variable impedance coupled to an output of the Doherty amplifier; anda controller configured to set the variable impedance to a first impedance when an output power level of the Doherty amplifier is less than a threshold and to a second impedance when the output power level of the Doherty amplifier is above the threshold.2. The device of claim 1 , wherein the variable impedance includes an impedance transformer.3. The device of claim 2 , wherein the impedance transformer is coupled to a load.4. The device of claim 2 , wherein the impedance transformer includes:a transmission line;at least one capacitor connected to the transmission line;at least one switch connected to the at least one capacitor; andwherein the controller is configured to control the switch to adjust the impedance of the impedance transformer.5. The device of claim 2 , wherein the impedance transformer includes:a transmission line; anda plurality of diodes connected to the transmission line, wherein the controller is connected to the plurality of diodes.6. The device of claim 1 , wherein the ...

Microelectronic systems containing embedded heat dissipation structures and methods for the fabrication thereof

Microelectronic systems having embedded heat dissipation structures are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the steps or processes of obtaining a substrate having a tunnel formed therethrough, attaching a microelectronic component to a frontside of the substrate at a location covering the tunnel, and producing an embedded heat dissipation structure at least partially within the tunnel after attaching the microelectronic component to the substrate. The step of producing may include application of a bond layer precursor material into the tunnel and onto the microelectronic component from a backside of the substrate. The bond layer precursor material may then be subjected to sintering process or otherwise cured to form a thermally-conductive component bond layer in contact with the microelectronic component.

MICROELECTRONIC MODULES WITH SINTER-BONDED HEAT DISSIPATION STRUCTURES AND METHODS FOR THE FABRICATION THEREOF

Methods for producing high thermal performance microelectronic modules containing sinter-bonded heat dissipation structures. In one embodiment, the method includes embedding a sinter-bonded heat dissipation structure in a module substrate. The step of embedding may entail applying a sinter precursor material containing metal particles into a cavity provided in the module substrate, and subsequently sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body bonded to the module substrate. A microelectronic device and a heatsink are then attached to the module substrate before, after, or concurrent with sintering such that the heatsink is thermally coupled to the microelectronic device through the sinter-bonded heat dissipation structure. In certain embodiments, the microelectronic device may be bonded to the module substrate at a location overlying the thermally-conductive structure. 1. A method for fabricating a microelectronic module , comprising: applying a sinter precursor material containing metal particles into a cavity provided in the module substrate; and', 'sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body bonded to the module substrate; and, 'embedding a sinter-bonded heat dissipation structure in a module substrate byattaching a microelectronic device and a heatsink to the module substrate before, after, or concurrent with sintering, the heatsink thermally coupled to the microelectronic device through the sinter-bonded heat dissipation structure.2. The method of wherein attaching comprises bonding the microelectronic device to the module substrate at a location overlying the thermally-conductive structure claim 1 , as taken along an axis substantially orthogonal to an upper principal surface of the module substrate.3. The method of wherein bonding comprises ...

Microelectronic components having integrated heat dissipation posts and systems including the same

Microelectronic systems and components having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems and components. In various embodiments, the microelectronic system includes a substrate having a frontside, a socket cavity, and inner cavity sidewalls defining the socket cavity. A microelectronic component is seated on the frontside of the substrate such that a heat dissipation post, which projects from the microelectronic component, is received in the socket cavity and separated from the inner cavity sidewalls by a peripheral clearance. The microelectronic system further includes a bond layer contacting the inner cavity sidewalls, contacting an outer peripheral portion of the heat dissipation post, and at least partially filling the peripheral clearance.

SYSTEMS AND METHODS FOR PREDICTING AND ADJUSTING THE DOSAGE OF MEDICINES IN INDIVIDUAL PATIENTS

The method and system of this invention provides for the use of the Simcyp Simulator to identify the characteristics of a Virtual Twin to a real patient based on physiological data and demographic characteristics of the real patient. The Virtual Twin can be used to estimate appropriate dosage levels for a real patient undergoing pharmaceutical treatment and to indicate drug interactions that can occur during the administration of multiple drugs. 1. A method of using the Simcyp Simulator to identify a Virtual Twin to a real patient to identify drug treatment parameters and possible drug interactions comprising the following steps:entering a chosen dosage, dosage interval, route of administration, and dosage form (where relevant) for the drug of interest (the primary drug). The name of the drug is matched with the compound libraries within the Simulator to determine if a file for that drug has been established. If so, the next step will be initiated;b) entering age, sex, weight, race of the patient and relevant genotypes (for enzymes and transporters, receptors), smoking habit (number of cigarettes smoked per day), and relevant biomarker data (e.g. markers of specific drug metabolizing enzyme activity—such as salivary caffeine level for CYP1A2, plasma 6 beta-hydroxycortisol level for CYP3A4). The prescriber is also requested to enter the names of any other drugs (and their dosage) that the patient is already taking or that the doctor wishes them to take simultaneously with the primary drug. The names of these drugs are matched with compound libraries within the Simcyp Simulator® to determine if files for those drugs have been established. If so, the degree of any interaction with the primary drug will subsequently be determined;c) determining on the patient's demographics and relevant information on disease state, the Simcyp Simulator® defines his or her tissue volumes and blood flows, renal function, and gut characteristics (gastric emptying rate, segmental volumes ...

Delayed and sustained drug release

The invention relates to the controlled release of preparations of therapeutic agents, for example a steroid; formulations comprising said preparations; and the use of said formulations to treat diseases such as those diseases which would benefit from steroid treatment.

HERBICIDES CYCLOHEXANE-1,3-DIONE.

Containers

A packaging container is closed by using a double seam 152 to secure over the container body 70 a cover 74 of smaller diameter than is usual, creating a radial space 104 around the cover chuck wall 122 into which the body sidewall 72 is deformed to form a neck 76. The cover is initially placed on the body to form a sealable interface 142 therebetween, this interface being preserved throughout the seaming process. The body and/or the cover may be of plastics or metal or a laminated material. In an aseptic packaging process, a primary seal is created at the interface 142 under sterile conditions, seaming subsequently being carried out under non-sterile conditions.

Indicator means

Amplifier power combiner with slotline impedance transformer

Containers

Methods of closing containers

Amplifier power combiner with slotline impedance transformer

Systems and methods for communicating electromagnetic signals and/or power and, more particularly for example, to power combiners and similar systems and methods for communicating electromagnetic signals and/or power generated by amplifiers to loads, are described herein. In at least example embodiment, a power amplifier system includes first and second amplifier circuits and a power combiner circuit coupled to each of the first and second amplifier circuits and having a first microstrip transmission line component, a slotline formation, and an additional coupling component that is capable of being at least indirectly coupled to a load, where the first microstrip transmission line component and additional coupling component are electromagnetically coupled by way of the slotline formation.

FOERPACKNINGAR.

A packaging container is closed by using a double seam 152 to secure over the container body 70 a cover 74 of smaller diameter than is usual, creating a radial space 104 around the cover chuck wall 122 into which the body sidewall 72 is deformed to form a neck 76. The cover is initially placed on the body to form a sealable interface 142 therebetween, this interface being preserved throughout the seaming process. The body and/or the cover may be of plastics or metal or a laminated material. In an aseptic packaging process, a primary seal is created at the interface 142 under sterile conditions, seaming subsequently being carried out under non-sterile conditions.

Method of closing a container by securing a cover to a container body by means of a double seam

A packaging container is closed by using a double seam 152 to secure over the container body 70 a cover 74 of smaller diameter than is usual, creating a radial space 104 around the cover chuck wall 122 into which the body sidewall 72 is deformed to form a neck 76. The cover is initially placed on the body to form a sealable interface 142 therebetween, this interface being preserved throughout the seaming process. The body and/or the cover may be of plastics or metal or a laminated material. In an aseptic packaging process, a primary seal is created at the interface 142 under sterile conditions, seaming subsequently being carried out under non-sterile conditions.

Microelectronic components having integrated heat dissipation posts, systems including the same, and methods for the fabrication thereof

Microelectronic systems having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the step or process of obtaining a microelectronic component from which a heat dissipation post projects. The microelectronic component is placed or seated on a substrate, such as a multilayer printed circuit board, having a socket cavity therein. The heat dissipation post is received in the socket cavity as the microelectronic component is seated on the substrate. Concurrent with or after seating the microelectronic component, the microelectronic component and the heat dissipation post are bonded to the substrate. In certain embodiments, the heat dissipation post may be dimensioned or sized such that, when the microelectronic component is seated on the substrate, the heat dissipation post occupies a volumetric majority of the socket cavity.

Power amplifier modules including topside cooling interfaces and methods for the fabrication thereof

Power amplifier modules (PAMs) having topside cooling interfaces are disclosed, as are methods for fabricating such PAMs. In embodiments, the method includes attaching the RF power die to a die support-surface of a module substrate. The RF power die is attached to the module substrate in an inverted orientation such that a frontside of the RF power die faces the module substrate. When attaching the RF power die to the module substrate, a frontside input/output interface of the RF power die is electrically coupled to corresponding substrate interconnect features of the module substrate. The method further includes providing a primary heat extraction path extending from the transistor channel of the RF power die to a topside cooling interface of the PAM in a direction opposite the module substrate.

Cyclohexeny pyridine derivatives