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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 387. Отображено 141.
03-01-2017 дата публикации

CMOS ultrasonic transducers and related apparatus and methods

Номер: US0009533873B2
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

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Номер записи: 1
20-02-2018 дата публикации

Ultrasonic transducers in complementary metal oxide semiconductor (CMOS) wafers and related apparatus and methods

Номер: US0009899371B2
Автор: Jonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Susan A. Alie, ROTHBERG JONATHAN M, FIFE KEITH G, SANCHEZ NEVADA J, ALIE SUSAN A, Rothberg Jonathan M., Fife Keith G., Sanchez Nevada J., Alie Susan A.
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

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Номер записи: 2
10-08-2017 дата публикации

CMOS ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20170225196A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided. 1. A method , comprising:forming a cavity in a first wafer above a complementary metal oxide semiconductor (CMOS) circuit in the first wafer, the first wafer including a metal electrode structure disposed within an insulating layer of the first wafer, wherein forming the cavity comprises etching an upper surface of the first wafer down to an etch stop layer of the first wafer in which the electrode structure is disposed;directly bonding the first wafer and a second wafer to seal the cavity of the first wafer with the second wafer to form a sealed cavity; andforming an ultrasonic transducer membrane from the second wafer.2. The method of claim 1 , wherein forming the ultrasonic transducer membrane from the second wafer comprises thinning a backside of the second wafer distal the cavity.3. The method of claim 2 , wherein the second wafer defines an SOI wafer including a buried insulator layer claim 2 , and wherein thinning the backside of the second wafer comprises etching a base silicon layer of the second wafer until substantially reaching the buried insulator layer.4. The method of claim 3 , wherein etching the base silicon layer further comprises using a selective etch for which the buried insulator layer functions as an etch stop layer of the second wafer.5. The method of claim 3 , wherein the buried insulator layer is SiO.6. The method of claim 2 , wherein the second wafer further comprises a bulk silicon wafer having a degeneratively doped layer claim 2 , and wherein the degeneratively doped layer is proximate the cavity of the first wafer claim 2 , and wherein thinning the backside of the second wafer comprises etching the second wafer until the ...

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Номер записи: 3
06-06-2017 дата публикации

Chemical sensor with consistent sensor surface areas

Номер: US0009671363B2
Автор: Keith G. Fife, Jordan Owens, Shifeng Li, James Bustillo, FIFE KEITH G, OWENS JORDAN, LI SHIFENG, BUSTILLO JAMES, Fife Keith G., Owens Jordan, Li Shifeng, Bustillo James
Принадлежит: Life Technologies Corporation, LIFE TECHNOLOGIES CORP, LIFE TECHNOLOGIES CORPORATION

A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.

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Номер записи: 4
10-10-2017 дата публикации

Integrated device with external light source for probing detecting and analyzing molecules

Номер: US0009784679B2
Автор: Jonathan M. Rothberg, Ali Kabiri, Jason W. Sickler, Brett J. Gyarfas, Jeremy Lackey, Gerard Schmid, Lawrence C. West, Keith G. Fife, Benjamin Cipriany, Farshid Ghasemi, ROTHBERG JONATHAN M, KABIRI ALI, SICKLER JASON W, GYARFAS BRETT J, LACKEY JEREMY, SCHMID GERARD, WEST LAWRENCE C, FIFE KEITH G, CIPRIANY BENJAMIN, GHASEMI FARSHID, Rothberg Jonathan M., Kabiri Ali, Sickler Jason W., Gyarfas Brett J., Lackey Jeremy, Schmid Gerard, West Lawrence C., Fife Keith G., Cipriany Benjamin, Ghasemi Farshid
Принадлежит: Quantum-Si Incorporated, QUANTUM-SI INCORPORATED

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of ...

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Номер записи: 5
15-09-2016 дата публикации

CMOS ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20160264400A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

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Номер записи: 6
25-05-2017 дата публикации

INTERCONNECTABLE ULTRASOUND TRANSDUCER PROBES AND RELATED METHODS AND APPARATUS

Номер: US20170143306A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston, Gregory L. Charvat, Gregory Corteville, ROTHBERG JONATHAN M, FIFE KEITH G, SANCHEZ NEVADA J, RALSTON TYLER S, CHARVAT GREGORY L, CORTEVILLE GREGORY, Rothberg Jonathan M., Fife Keith G., Sanchez Nevada J., Ralston Tyler S., Charvat Gregory L., Corteville Gregory
Принадлежит: Butterfly Network, Inc.

Ultrasound devices and methods are described, including a repeatable ultrasound transducer probe having ultrasonic transducers and corresponding circuitry. The repeatable ultrasound transducer probe may be used individually or coupled with other instances of the repeatable ultrasound transducer probe to create a desired ultrasound device. The ultrasound devices may optionally be connected to various types of external devices to provide additional processing and image rendering functionality. 1. A method , comprising:forming a plurality of ultrasonic transducers on a substrate;forming control circuitry on the substrate, coupled to the plurality of ultrasonic transducers;forming a first interface of a first type on the substrate and a second interface of a second type on the substrate, the first and second interfaces individually configured to provide an electrical connection between the control circuitry and an external device.2. The method of claim 1 , wherein the first type of interface is a lower speed interface than the second type of interface.3. The method of claim 2 , further comprising forming a third interface claim 2 , the third interface being of the second type and being configured to transfer electronic signals between the control circuitry and the external device.4. The method of claim 3 , further comprising forming in the range of four times to ten times as many interfaces of the second type as interfaces of the first type.5. The method of claim 2 , wherein the second interface is configured to operate at speeds greater than approximately 4 gigabits per second (Gbps).6. The method of claim 5 , wherein the second interface is configured to operate at speeds between approximately 4 Gbps and approximately 50 Gbps.7. The method of claim 1 , further comprising forming the first interface and/or the second interface on the substrate.8. The method of claim 1 , wherein the second interface is configured to interface with an external field programmable gate ...

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Номер записи: 7
14-11-2017 дата публикации

Low field magnetic resonance imaging methods and apparatus

Номер: US0009817093B2
Автор: Jonathan M. Rothberg, Matthew Scot Rosen, Gregory L. Charvat, William J. Mileski, Todd Rearick, Michael Stephen Poole, Keith G. Fife, ROTHBERG JONATHAN M, ROSEN MATTHEW SCOT, CHARVAT GREGORY L, MILESKI WILLIAM J, REARICK TODD, POOLE MICHAEL STEPHEN, FIFE KEITH G, Rothberg Jonathan M., Rosen Matthew Scot, Charvat Gregory L., Mileski William J., Rearick Todd, Poole Michael Stephen, Fife Keith G.
Принадлежит: Hyperfine Research, Inc., HYPERFINE RES INC

According to some aspects, a laminate panel is provided. The laminate panel comprises at least one laminate layer including at least one non-conductive layer and at least one conductive layer patterned to form at least a portion of a B0 coil configured to contribute to a B0 field suitable for use in low-field magnetic resonance imaging (MRI).

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Номер записи: 8
29-11-2016 дата публикации

Ultrasonic transducers in complementary metal oxide semiconductor (CMOS) wafers and related apparatus and methods

Номер: US0009505030B2
Автор: Jonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Susan A. Alie, ROTHBERG JONATHAN M, FIFE KEITH G, SANCHEZ NEVADA J, ALIE SUSAN A, Rothberg Jonathan M., Fife Keith G., Sanchez Nevada J., Alie Susan A.
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

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Номер записи: 9
11-04-2017 дата публикации

Pulsed laser and bioanalytic system

Номер: US0009617594B2
Автор: Jonathan M. Rothberg, Jason W. Sickler, Lawrence C. West, Faisal R. Ahmad, Paul E. Glenn, Jack Jewell, John Glenn, Jose Camara, Jeremy Christopher Jordan, Todd Rearick, Farshid Ghasemi, Jonathan C. Schultz, Keith G. Fife, ROTHBERG JONATHAN M, SICKLER JASON W, WEST LAWRENCE C, AHMAD FAISAL R, GLENN PAUL E, JEWELL JACK, GLENN JOHN, CAMARA JOSE, JORDAN JEREMY CHRISTOPHER, REARICK TODD, GHASEMI FARSHID, SCHULTZ JONATHAN C, FIFE KEITH G, Rothberg Jonathan M., Sickler Jason W., West Lawrence C., Ahmad Faisal R., Glenn Paul E., Jewell Jack, Glenn John, Camara Jose, Jordan Jeremy Christopher, Rearick Todd, Ghasemi Farshid, Schultz Jonathan C., Fife Keith G.
Принадлежит: Quantum-Si Incorporated, QUANTUM-SI INCORPORATED

Apparatus and methods for producing ultrashort optical pulses are described. A high-power, solid-state, passively mode-locked laser can be manufactured in a compact module that can be incorporated into a portable instrument for biological or chemical analyses. The pulsed laser may produce sub-100-ps optical pulses at a repetition rate commensurate with electronic data-acquisition rates. The optical pulses may excite samples in reaction chambers of the instrument, and be used to generate a reference clock for operating signal-acquisition and signal-processing electronics of the instrument.

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Номер записи: 10
03-10-2017 дата публикации

Symmetric receiver switch for bipolar pulser

Номер: US0009778348B1
Автор: Kailiang Chen, Tyler S. Ralston, Keith G. Fife, CHEN KAILIANG, RALSTON TYLER S, FIFE KEITH G, Chen Kailiang, Ralston Tyler S., Fife Keith G.
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

Circuitry for ultrasound devices is described. A multilevel pulser is described, which can provide bipolar pulses of multiple levels. The multilevel pulser includes a pulsing circuit and pulser and feedback circuit. Symmetric switches are also described. The symmetric switches can be positioned as inputs to ultrasound receiving circuitry to block signals from the receiving circuitry.

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Номер записи: 11
06-10-2016 дата публикации

MICROFABRICATED ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20160290969A1
Автор: Jonathan M. Rothberg, Susan A. Alie, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston, ROTHBERG JONATHAN M, ALIE SUSAN A, FIFE KEITH G, SANCHEZ NEVADA J, RALSTON TYLER S, Rothberg Jonathan M., Alie Susan A., Fife Keith G., Sanchez Nevada J., Ralston Tyler S.
Принадлежит: Butterfly Network, Inc.

Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

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Номер записи: 12
06-10-2016 дата публикации

MICROFABRICATED ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20160290970A1
Автор: Jonathan M. Rothberg, Susan A. Alie, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston, ROTHBERG JONATHAN M, ALIE SUSAN A, FIFE KEITH G, SANCHEZ NEVADA J, RALSTON TYLER S, Rothberg Jonathan M., Alie Susan A., Fife Keith G., Sanchez Nevada J., Ralston Tyler S.
Принадлежит: Butterfly Network, Inc.

Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

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Номер записи: 13
13-06-2017 дата публикации

Integrated device with external light source for probing detecting and analyzing molecules

Номер: US0009678012B2
Автор: Jonathan M. Rothberg, Ali Kabiri, Jason W. Sickler, Brett J. Gyarfas, Jeremy Lackey, Gerard Schmid, Lawrence C. West, Keith G. Fife, Benjamin Cipriany, Farshid Ghasemi, ROTHBERG JONATHAN M, KABIRI ALI, SICKLER JASON W, GYARFAS BRETT J, LACKEY JEREMY, SCHMID GERARD, WEST LAWRENCE C, FIFE KEITH G, CIPRIANY BENJAMIN, GHASEMI FARSHID, Rothberg Jonathan M., Kabiri Ali, Sickler Jason W., Gyarfas Brett J., Lackey Jeremy, Schmid Gerard, West Lawrence C., Fife Keith G., Cipriany Benjamin, Ghasemi Farshid
Принадлежит: Quantum-Si Incorporated, QUANTUM-SI INCORPORATED

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of ...

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Номер записи: 14
22-11-2016 дата публикации

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same

Номер: US0009499395B2
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

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Номер записи: 15
05-10-2017 дата публикации

MULTILEVEL BIPOLAR PULSER

Номер: US20170285155A1
Автор: Kailiang Chen, Tyler S. Ralston, Keith G. Fife, CHEN KAILIANG, RALSTON TYLER S, FIFE KEITH G, Chen Kailiang, Ralston Tyler S., Fife Keith G.
Принадлежит: Butterfly Network, Inc.

Circuitry for ultrasound devices is described. A multilevel pulser is described, which can provide bipolar pulses of multiple levels. The multilevel pulser includes a pulsing circuit and pulser and feedback circuit. Symmetric switches are also described. The symmetric switches can be positioned as inputs to ultrasound receiving circuitry to block signals from the receiving circuitry.

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Номер записи: 16
05-10-2017 дата публикации

SYMMETRIC RECEIVER SWITCH FOR BIPOLAR PULSER

Номер: US20170285150A1
Автор: Kailiang Chen, Tyler S. Ralston, Keith G. Fife, CHEN KAILIANG, RALSTON TYLER S, FIFE KEITH G, Chen Kailiang, Ralston Tyler S., Fife Keith G.
Принадлежит: Butterfly Network, Inc.

Circuitry for ultrasound devices is described. A multilevel pulser is described, which can provide bipolar pulses of multiple levels. The multilevel pulser includes a pulsing circuit and pulser and feedback circuit. Symmetric switches are also described. The symmetric switches can be positioned as inputs to ultrasound receiving circuitry to block signals from the receiving circuitry.

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Номер записи: 17
29-12-2016 дата публикации

ULTRASONIC TRANSDUCERS IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) WAFERS AND RELATED APPARATUS AND METHODS

Номер: US20160379973A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Susan A. Alie, ROTHBERG JONATHAN M, FIFE KEITH G, SANCHEZ NEVADA J, ALIE SUSAN A, Rothberg Jonathan M., Fife Keith G., Sanchez Nevada J., Alie Susan A.
Принадлежит: Butterfly Network, Inc.

Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

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Номер записи: 18
22-08-2017 дата публикации

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same

Номер: US0009738514B2
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

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Номер записи: 19
22-11-2016 дата публикации

CMOS ultrasonic transducers and related apparatus and methods

Номер: US0009499392B2
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

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Номер записи: 20
22-12-2016 дата публикации

INTEGRATED DEVICE WITH EXTERNAL LIGHT SOURCE FOR PROBING DETECTING AND ANALYZING MOLECULES

Номер: US20160370291A1
Автор: Jonathan M. Rothberg, Ali Kabiri, Jason W. Sickler, Brett J. Gyarfas, Jeremy Lackey, Gerard Schmid, Lawrence C. West, Keith G. Fife, Benjamin Cipriany, Farshid Ghasemi, ROTHBERG JONATHAN M, KABIRI ALI, SICKLER JASON W, GYARFAS BRETT J, LACKEY JEREMY, SCHMID GERARD, WEST LAWRENCE C, FIFE KEITH G, CIPRIANY BENJAMIN, GHASEMI FARSHID, Rothberg Jonathan M., Kabiri Ali, Sickler Jason W., Gyarfas Brett J., Lackey Jeremy, Schmid Gerard, West Lawrence C., Fife Keith G., Cipriany Benjamin, Ghasemi Farshid
Принадлежит: Quantum-Si Incorporated

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of ...

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Номер записи: 21
22-12-2016 дата публикации

PULSED LASER AND BIOANALYTIC SYSTEM

Номер: US20160369332A1
Автор: Jonathan M. Rothberg, Jason W. Sickler, Lawrence C. West, Faisal R. Ahmad, Paul E. Glenn, Jack Jewell, John Glenn, Jose Camara, Jeremy Christopher Jordan, Todd Rearick, Farshid Ghasemi, Jonathan C. Schultz, Keith G. Fife, ROTHBERG JONATHAN M, SICKLER JASON W, WEST LAWRENCE C, AHMAD FAISAL R, GLENN PAUL E, JEWELL JACK, GLENN JOHN, CAMARA JOSE, JORDAN JEREMY CHRISTOPHER, REARICK TODD, GHASEMI FARSHID, SCHULTZ JONATHAN C, FIFE KEITH G, Rothberg Jonathan M., Sickler Jason W., West Lawrence C., Ahmad Faisal R., Glenn Paul E., Jewell Jack, Glenn John, Camara Jose, Jordan Jeremy Christopher, Rearick Todd, Ghasemi Farshid, Schultz Jonathan C., Fife Keith G.
Принадлежит: Quantum-Si Incorporated

Apparatus and methods for producing ultrashort optical pulses are described. A high-power, solid-state, passively mode-locked laser can be manufactured in a compact module that can be incorporated into a portable instrument for biological or chemical analyses. The pulsed laser may produce sub-100-ps optical pulses at a repetition rate commensurate with electronic data-acquisition rates. The optical pulses may excite samples in reaction chambers of the instrument, and be used to generate a reference clock for operating signal-acquisition and signal-processing electronics of the instrument.

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Номер записи: 22
06-03-2018 дата публикации

Microfabricated ultrasonic transducers and related apparatus and methods

Номер: US0009910018B2
Автор: Jonathan M. Rothberg, Susan A. Alie, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston, ROTHBERG JONATHAN M, ALIE SUSAN A, FIFE KEITH G, SANCHEZ NEVADA J, RALSTON TYLER S, Rothberg Jonathan M., Alie Susan A., Fife Keith G., Sanchez Nevada J., Ralston Tyler S.
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

Подробнее
Номер записи: 23
02-02-2017 дата публикации

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME

Номер: US20170029271A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices. 1. An apparatus , comprising:a semiconductor wafer having a complementary metal oxide semiconductor (CMOS) integrated circuit and an electrode;a conductive membrane bonded to a semiconductor wafer to form a bonded structure such that a sealed cavity exists between an uppermost portion of the semiconductor wafer and a first side of the conductive membrane, thereby defining, at least in part, an ultrasonic transducer, with the sealed cavity disposed between the conductive membrane and the electrode; andthe uppermost portion of the semiconductor wafer providing an electrical connection between the CMOS integrated circuit and the first side of the conductive membrane.2. The apparatus of claim 1 , wherein the uppermost portion of the semiconductor wafer comprises a conductive standoff.3. The apparatus of claim 2 , wherein the conductive standoff comprises titanium nitride (TiN).4. The apparatus of claim 1 , wherein the uppermost portion of the semiconductor wafer comprises both an insulating material and a conductive material.5. The apparatus of claim 1 , wherein the uppermost portion of the semiconductor wafer comprises an insulating material having a conductive via embedded therein.6. The apparatus of claim 5 , wherein the insulating material comprises silicon oxide (SiO) and the conductive via comprises tungsten (W).7. The apparatus of claim 1 , wherein the conductive membrane has a substantially uniform thickness.8. The apparatus of claim 1 , wherein the conductive membrane has a peripheral portion of a first thickness and center portion of a second thickness claim 1 , the ...

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Номер записи: 24
17-08-2017 дата публикации

SENSOR AND DEVICE FOR LIFETIME IMAGING AND DETECTION APPLICATIONS

Номер: US20170231500A1
Автор: Jonathan M. Rothberg, Keith G. Fife, David Boisvert, ROTHBERG JONATHAN M, FIFE KEITH G, BOISVERT DAVID, Rothberg Jonathan M., Fife Keith G., Boisvert David
Принадлежит: Tesseract Health, Inc.

A method of luminance lifetime imaging includes receiving incident photons at an integrated photodetector from luminescent molecules. The incident photons being received through one or more optical components of a point-of-care device. The method also includes detecting arrival times of the incident photons using the integrated photodetector. A method of analyzing blood glucose includes detecting luminance lifetime characteristics of tissue using, at least in part, an integrated circuit that detects arrival times of incident photons from the tissue. The method also includes analyzing blood glucose based upon the luminance lifetime characteristics. 1. A method of luminance lifetime imaging , comprising:receiving incident photons at an integrated photodetector from luminescent molecules, the incident photons being received through one or more optical components of a point-of-care device; anddetecting arrival times of the incident photons using the integrated photodetector.2. The method of claim 1 , further comprising discriminating luminance lifetime characteristics of the luminescent molecules based on the arrival times.3. The method of claim 2 , further comprising producing an image using the luminance lifetime characteristics.4. The method of claim 3 , wherein the image indicates a presence of diseased tissue based upon the luminance lifetime characteristics.5. The method of claim 4 , wherein the image indicates a presence of melanoma claim 4 , a tumor claim 4 , a bacterial infection claim 4 , or a viral infection.6. The method of claim 1 , wherein the incident photons are received from tissue.7. The method of claim 6 , wherein the tissue comprises skin.8. The method of claim 6 , further comprising illuminating the tissue to excite the luminescent molecules.9. A method claim 6 , comprising:detecting luminance lifetime characteristics of tissue using, at least in part, an integrated circuit that detects arrival times of incident photons from the tissue, andanalyzing ...

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Номер записи: 25
02-03-2017 дата публикации

CMOS ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20170056926A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided. 1. A method , comprising:forming, on a wafer, a complementary metal oxide semiconductor (CMOS) ultrasound transducer (CUT) device having a cavity, a membrane sealing the cavity, and processing circuitry; andforming an electrical contact on a bottom side of the membrane, the electrical contact physically contacting the bottom side of the membrane and connecting the membrane to the processing circuitry, the bottom side of the membrane proximal the cavity, and wherein the bottom side of the membrane and the electrical contact physically contacting the bottom side of the membrane comprise substantially a same material.2. The method of claim 1 , further comprising forming a plurality of cavities of the CUT device in the wafer and sealing the plurality of cavities with the membrane.3. The method of claim 1 , further comprising forming a plurality of cavities of the CUT device in the wafer and sealing at least two cavities of the plurality of cavities with respective membranes.4. The method of claim 1 , wherein the electrical contact and the bottom side of the membrane comprise doped silicon.5. The method of claim 1 , wherein the electrical contact and the bottom side of the membrane comprise titanium nitride.6. The method of claim 1 , wherein the CUT device lacks metallization on an upper surface of the membrane distal the cavity.7. The method of claim 1 , wherein the CUT device lacks an electrode on an upper surface of the membrane distal the cavity.8. The method of claim 1 , wherein the wafer comprises a silicon substrate claim 1 , and wherein the electrical contact contacts the silicon substrate.9. The method of claim 1 , wherein the electrical contact comprises a ...

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Номер записи: 26
29-12-2016 дата публикации

INTEGRATED DEVICE FOR TEMPORAL BINNING OF RECEIVED PHOTONS

Номер: US20160377543A1
Автор: Jonathan M. Rothberg, Keith G. Fife, David Boisvert, ROTHBERG JONATHAN M, FIFE KEITH G, BOISVERT DAVID, Rothberg Jonathan M., Fife Keith G., Boisvert David
Принадлежит: Quantum-Si Incorporated

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

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Номер записи: 27
04-07-2017 дата публикации

Integrated device for temporal binning of received photons

Номер: US0009696258B2
Автор: Jonathan M. Rothberg, Keith G. Fife, David Boisvert, ROTHBERG JONATHAN M, FIFE KEITH G, BOISVERT DAVID, Rothberg Jonathan M., Fife Keith G., Boisvert David
Принадлежит: Quantum-Si Incorporated, QUANTUM-SI INCORPORATED

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

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Номер записи: 28
05-12-2017 дата публикации

Chemical sensor with protruded sensor surface

Номер: US0009835585B2
Автор: Keith G. Fife, Jordan Owens, Shifeng Li, James Bustillo, FIFE KEITH G, OWENS JORDAN, LI SHIFENG, BUSTILLO JAMES, Fife Keith G., Owens Jordan, Li Shifeng, Bustillo James
Принадлежит: LIFE TECHNOLOGIES CORPORATION, LIFE TECHNOLOGIES CORP

In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A conductive element protrudes from the upper surface of the floating gate conductor into an opening. A dielectric material defines a reaction region. The reaction region overlies and extends below an upper surface of the conductive element.

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Номер записи: 29
21-11-2017 дата публикации

Chemical device with thin conductive element

Номер: US0009823217B2
Автор: Keith G. Fife, Jordan Owens, Shifeng Li, James Bustillo, FIFE KEITH G, OWENS JORDAN, LI SHIFENG, BUSTILLO JAMES, Fife Keith G., Owens Jordan, Li Shifeng, Bustillo James
Принадлежит: LIFE TECHNOLOGIES CORPORATION, LIFE TECHNOLOGIES CORP

In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

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Номер записи: 30
25-08-2016 дата публикации

MONOLITHIC ULTRASONIC IMAGING DEVICES, SYSTEMS AND METHODS

Номер: US20160242739A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein. 1. A device , comprising:at least first and second waveform generators configured to generate waveforms for transmission by at least first and second corresponding ultrasonic transducer elements, the first waveform generator comprising at least one first configurable operational parameter and the second waveform generator comprising at least one second configurable operational parameter; anda controller configured to control values of the first and second configurable operational parameters.2. The device of claim 1 , wherein:the controller is configured to output a sequence of transmit event numbers;the first waveform generator has associated therewith a first event memory that stores values for the first configurable operational parameter associated with respective transmit event numbers, and is configured to receive transmitted event numbers from the controller and to output corresponding stored values for the first configurable operational parameter to the first waveform generator for use thereby; andthe second waveform generator has associated therewith a second event memory that stores values for the second configurable operational parameter associated with respective transmit event numbers, and is configured to receive ...

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Номер записи: 31
12-09-2017 дата публикации

Integrated device for temporal binning of received photons

Номер: US0009759658B2
Автор: Jonathan M. Rothberg, Keith G. Fife, David Boisvert, ROTHBERG JONATHAN M, FIFE KEITH G, BOISVERT DAVID, Rothberg Jonathan M., Fife Keith G., Boisvert David
Принадлежит: Quantum-Si Incorporated, QUANTUM-SI INCORPORATED

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

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Номер записи: 32
20-12-2016 дата публикации

Monolithic ultrasonic imaging devices, systems and methods

Номер: US0009521991B2
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein.

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Номер записи: 33
19-10-2017 дата публикации

INTEGRATED DEVICE WITH EXTERNAL LIGHT SOURCE FOR PROBING DETECTING AND ANALYZING MOLECULES

Номер: US20170299518A1
Автор: Jonathan M. Rothberg, Ali Kabiri, Jason W. Sickler, Brett J. Gyarfas, Jeremy Lackey, Gerard Schmid, Lawrence C. West, Keith G. Fife, Benjamin Cipriany, Farshid Ghasemi, ROTHBERG JONATHAN M, KABIRI ALI, SICKLER JASON W, GYARFAS BRETT J, LACKEY JEREMY, SCHMID GERARD, WEST LAWRENCE C, FIFE KEITH G, CIPRIANY BENJAMIN, GHASEMI FARSHID, Rothberg Jonathan M., Kabiri Ali, Sickler Jason W., Gyarfas Brett J., Lackey Jeremy, Schmid Gerard, West Lawrence C., Fife Keith G., Cipriany Benjamin, Ghasemi Farshid
Принадлежит: Quantum-Si Incorporated

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of ...

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Номер записи: 34
19-10-2017 дата публикации

ULTRASONIC IMAGING DEVICES, SYSTEMS AND METHODS

Номер: US20170296144A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein.

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Номер записи: 35
24-11-2016 дата публикации

PULSED LASER AND BIOANALYTIC SYSTEM

Номер: US20160344156A1
Автор: Jonathan M. Rothberg, Jason W. Sickler, Lawrence C. West, Faisal Ahmad, Paul E. Glenn, Jack Jewell, John Glenn, Jose Camara, Jeremy Christopher Jordan, Todd Rearick, Farshid Ghasemi, Jonathan C. Schultz, Keith G. Fife, ROTHBERG JONATHAN M, SICKLER JASON W, WEST LAWRENCE C, AHMAD FAISAL, GLENN PAUL E, JEWELL JACK, GLENN JOHN, CAMARA JOSE, JORDAN JEREMY CHRISTOPHER, REARICK TODD, GHASEMI FARSHID, SCHULTZ JONATHAN C, FIFE KEITH G, Rothberg Jonathan M., Sickler Jason W., West Lawrence C., Ahmad Faisal, Glenn Paul E., Jewell Jack, Glenn John, Camara Jose, Jordan Jeremy Christopher, Rearick Todd, Ghasemi Farshid, Schultz Jonathan C., Fife Keith G.
Принадлежит: Quantum-Si Incorporated

Apparatus and methods for producing ultrashort optical pulses are described. A high-power, solid-state, passively mode-locked laser can be manufactured in a compact module that can be incorporated into a portable instrument for biological or chemical analyses. The pulsed laser may produce sub-100-ps optical pulses at a repetition rate commensurate with electronic data-acquisition rates. The optical pulses may excite samples in reaction chambers of the instrument, and be used to generate a reference clock for operating signal-acquisition and signal-processing electronics of the instrument.

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Номер записи: 36
29-09-2016 дата публикации

MICROFABRICATED ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20160280538A1
Автор: Jonathan M. Rothberg, Susan A. Alie, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston, ROTHBERG JONATHAN M, ALIE SUSAN A, FIFE KEITH G, SANCHEZ NEVADA J, RALSTON TYLER S, Rothberg Jonathan M., Alie Susan A., Fife Keith G., Sanchez Nevada J., Ralston Tyler S.
Принадлежит: Butterfly Network, Inc.

Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

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Номер записи: 37
14-03-2017 дата публикации

Interconnectable ultrasound transducer probes and related methods and apparatus

Номер: US0009592030B2
Автор: Jonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston, Gregory L. Charvat, Gregory Corteville, ROTHBERG JONATHAN M, FIFE KEITH G, SANCHEZ NEVADA J, RALSTON TYLER S, CHARVAT GREGORY L, CORTEVILLE GREGORY, Rothberg Jonathan M., Fife Keith G., Sanchez Nevada J., Ralston Tyler S., Charvat Gregory L., Corteville Gregory
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

Ultrasound devices and methods are described, including a repeatable ultrasound transducer probe having ultrasonic transducers and corresponding circuitry. The repeatable ultrasound transducer probe may be used individually or coupled with other instances of the repeatable ultrasound transducer probe to create a desired ultrasound device. The ultrasound devices may optionally be connected to various types of external devices to provide additional processing and image rendering functionality.

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Номер записи: 38
22-12-2016 дата публикации

INTEGRATED DEVICE WITH EXTERNAL LIGHT SOURCE FOR PROBING DETECTING AND ANALYZING MOLECULES

Номер: US20160370292A1
Автор: Jonathan M. Rothberg, Ali Kabiri, Jason W. Sickler, Brett J. Gyarfas, Jeremy Lackey, Gerard Schmid, Lawrence C. West, Keith G. Fife, Benjamin Cipriany, Farshid Ghasemi, ROTHBERG JONATHAN M, KABIRI ALI, SICKLER JASON W, GYARFAS BRETT J, LACKEY JEREMY, SCHMID GERARD, WEST LAWRENCE C, FIFE KEITH G, CIPRIANY BENJAMIN, GHASEMI FARSHID, Rothberg Jonathan M., Kabiri Ali, Sickler Jason W., Gyarfas Brett J., Lackey Jeremy, Schmid Gerard, West Lawrence C., Fife Keith G., Cipriany Benjamin, Ghasemi Farshid
Принадлежит: Quantum-Si Incorporated

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of ...

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Номер записи: 39
14-09-2017 дата публикации

INTERCONNECTABLE ULTRASOUND TRANSDUCER PROBES AND RELATED METHODS AND APPARATUS

Номер: US20170258443A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston, Gregory L. Charvat, Gregory Corteville, ROTHBERG JONATHAN M, FIFE KEITH G, SANCHEZ NEVADA J, RALSTON TYLER S, CHARVAT GREGORY L, CORTEVILLE GREGORY, Rothberg Jonathan M., Fife Keith G., Sanchez Nevada J., Ralston Tyler S., Charvat Gregory L., Corteville Gregory
Принадлежит: Butterfly Network, Inc.

Ultrasound devices and methods are described, including a repeatable ultrasound transducer probe having ultrasonic transducers and corresponding circuitry. The repeatable ultrasound transducer probe may be used individually or coupled with other instances of the repeatable ultrasound transducer probe to create a desired ultrasound device. The ultrasound devices may optionally be connected to various types of external devices to provide additional processing and image rendering functionality.

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Номер записи: 40
20-03-2018 дата публикации

Optical system and assay chip for probing, detecting and analyzing molecules

Номер: US0009921157B2
Автор: Jonathan M. Rothberg, Ali Kabiri, Jason W. Sickler, Brett J. Gyarfas, Jeremy Lackey, Gerard Schmid, Paul E. Glenn, Lawrence C. West, Benjamin Cipriany, Keith G. Fife, ROTHBERG JONATHAN M, KABIRI ALI, SICKLER JASON W, GYARFAS BRETT J, LACKEY JEREMY, SCHMID GERARD, GLENN PAUL E, WEST LAWRENCE C, CIPRIANY BENJAMIN, FIFE KEITH G, Rothberg Jonathan M., Kabiri Ali, Sickler Jason W., Gyarfas Brett J., Lackey Jeremy, Schmid Gerard, Glenn Paul E., West Lawrence C., Cipriany Benjamin, Fife Keith G.
Принадлежит: Quantum-Si Incorporated, QUANTUM SI INC

Apparatus and methods for analyzing single molecule and performing nucleic acid sequencing. An apparatus can include an assay chip that includes multiple pixels with sample wells configured to receive a sample, which, when excited, emits emission energy; at least one element for directing the emission energy in a particular direction; and a light path along which the emission energy travels from the sample well toward a sensor. The apparatus also includes an instrument that interfaces with the assay chip. The instrument includes an excitation light source for exciting the sample in each sample well; a plurality of sensors corresponding the sample wells. Each sensor may detect emission energy from a sample in a respective sample well. The instrument includes at least one optical element that directs the emission energy from each sample well towards a respective sensor of the plurality of sensors.

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Номер записи: 41
08-06-2017 дата публикации

TRANS-IMPEDANCE AMPLIFIER FOR ULTRASOUND DEVICE AND RELATED APPARATUS AND METHODS

Номер: US20170163225A1
Автор: Kailiang Chen, Keith G. Fife, Nevada J. Sanchez, Andrew J. Casper, Tyler S. Ralston, CHEN KAILIANG, FIFE KEITH G, SANCHEZ NEVADA J, CASPER ANDREW J, RALSTON TYLER S, Chen Kailiang, Fife Keith G., Sanchez Nevada J., Casper Andrew J., Ralston Tyler S.
Принадлежит: Butterfly Network, Inc.

A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied. 1. An ultrasound apparatus , comprising:an ultrasound sensor;a variable current trans-impedance amplifier (TIA) coupled to the ultrasound sensor and configured to receive and amplify an output signal from the ultrasound sensor, the variable current TIA having a variable current source.2. The ultrasound apparatus of claim 1 , the variable current TIA being a two-stage operational amplifier having a first stage and a second stage claim 1 , wherein the variable current source includes a first variable current source coupled to the first stage and a second variable current source coupled to the second stage.3. The ultrasound apparatus of claim 2 , wherein the first and second variable current sources are independently controllable.4. The ultrasound apparatus of claim 2 , wherein the first and second variable current sources are digitally programmable.5. The ultrasound apparatus of claim 2 , wherein the first stage is arranged to receive the output signal from the ultrasound sensor and the second stage is arranged to provide an output signal of the variable current TIA.6. The ultrasound apparatus of claim 2 , wherein the variable current TIA further comprises a variable feedback RC circuit coupled between an output terminal of the variable current TIA and a node representing an input to the second stage.7. The ultrasound apparatus of claim 1 , further comprising a control circuit coupled to the variable current source and configured to control an amount of current through the variable current source.8. The ultrasound apparatus of claim 1 , wherein the ultrasound sensor and the ...

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Номер записи: 42
20-02-2018 дата публикации

CMOS ultrasonic transducers and related apparatus and methods

Номер: US0009895718B2
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc., BUTTERFLY NETWORK INC

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

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Номер записи: 43
08-06-2017 дата публикации

ULTRASOUND RECEIVER CIRCUITRY AND RELATED APPARATUS AND METHODS

Номер: US20170160388A1
Автор: Kailiang Chen, Keith G. Fife, Tyler S. Ralston, Nevada J. Sanchez, Andrew J. Casper, CHEN KAILIANG, FIFE KEITH G, RALSTON TYLER S, SANCHEZ NEVADA J, CASPER ANDREW J, Chen Kailiang, Fife Keith G., Ralston Tyler S., Sanchez Nevada J., Casper Andrew J.
Принадлежит: Butterfly Network, Inc.

Methods and apparatus are described for implementing a coding scheme on ultrasound signals received by a plurality of ultrasonic transducers. The coding, and subsequent decoding, may allow for multiple ultrasonic transducers to be operated in a receive mode simultaneously while still differentiating the contribution of the individual ultrasonic transducers. Improved signal characteristics may result, including improved signal-to-noise ratio (SNR). 1. An apparatus , comprising:an ultrasonic transducer;a receive circuit coupled to the ultrasonic transducer;a switching circuit having an input terminal and first and second output terminals, the input terminal coupled to the receive circuit; anda summation circuit having first and second input terminals switchably coupled to the first and second output terminals of the switching circuit, the summation circuit configured to output an output signal representing a combination of an output signal from the ultrasonic transducer with one or more output signals from one or more other ultrasonic transducers.2. The apparatus of claim 1 , wherein the switching circuit comprises a pair of cross-coupled switches coupled between the input terminal of the switching circuit and the first and second output terminals claim 1 , the pair of cross-coupled switches operable to control a sign of the output signal of the ultrasonic transducer with respect to a reference value.3. The apparatus of claim 1 , wherein the ultrasonic transducer is a first ultrasonic transducer claim 1 , the receive circuit is a first receive circuit claim 1 , and the switching circuit is a first switching circuit claim 1 , and wherein the apparatus further comprising a second ultrasonic transducer claim 1 , a second receive circuit coupled to the second ultrasonic transducer claim 1 , and a second switching circuit coupled between the second receive circuit and the first and second input terminals of the summation circuit.4. The apparatus of claim 3 , wherein the ...

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Номер записи: 44
28-03-2017 дата публикации

Integrated device for temporal binning of received photons

Номер: US0009606058B2
Автор: Jonathan M. Rothberg, Keith G. Fife, David Boisvert, ROTHBERG JONATHAN M, FIFE KEITH G, BOISVERT DAVID, Rothberg Jonathan M., Fife Keith G., Boisvert David
Принадлежит: Quantum-Si Incorporated, QUANTUM-SI INCORPORATED

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

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Номер записи: 45
29-12-2016 дата публикации

INTEGRATED DEVICE FOR TEMPORAL BINNING OF RECEIVED PHOTONS

Номер: US20160380025A1
Автор: Jonathan M. Rothberg, Keith G. Fife, David Boisvert, ROTHBERG JONATHAN M, FIFE KEITH G, BOISVERT DAVID, Rothberg Jonathan M., Fife Keith G., Boisvert David
Принадлежит: Quantum-Si Incorporated

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

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Номер записи: 46
19-10-2017 дата публикации

MONOLITHIC ULTRASONIC IMAGING DEVICES, SYSTEMS AND METHODS

Номер: US20170296145A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein.

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Номер записи: 47
05-10-2017 дата публикации

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME

Номер: US20170283254A1
Автор: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez, ROTHBERG JONATHAN M, FIFE KEITH G, RALSTON TYLER S, CHARVAT GREGORY L, SANCHEZ NEVADA J, Rothberg Jonathan M., Fife Keith G., Ralston Tyler S., Charvat Gregory L., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

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Номер записи: 48
06-02-2018 дата публикации

Integrated device with external light source for probing detecting and analyzing molecules

Номер: US0009885657B2
Автор: Jonathan M. Rothberg, Ali Kabiri, Jason W. Sickler, Brett J. Gyarfas, Jeremy Lackey, Gerard Schmid, Lawrence C. West, Keith G. Fife, Benjamin Cipriany, Farshid Ghasemi, ROTHBERG JONATHAN M, KABIRI ALI, SICKLER JASON W, GYARFAS BRETT J, LACKEY JEREMY, SCHMID GERARD, WEST LAWRENCE C, FIFE KEITH G, CIPRIANY BENJAMIN, GHASEMI FARSHID, Rothberg Jonathan M., Kabiri Ali, Sickler Jason W., Gyarfas Brett J., Lackey Jeremy, Schmid Gerard, West Lawrence C., Fife Keith G., Cipriany Benjamin, Ghasemi Farshid
Принадлежит: Quantum-Si Incorporated, QUANTUM SI INC

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of ...

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Номер записи: 49
22-08-2013 дата публикации

Chemical Sensor Array with Leakage Compensation Circuit

Номер: US20130214795A1
Автор: Fife Keith G.
Принадлежит: LIFE TECHNOLOGIES CORPORATION

To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or 1T, pixel can provide gain by converting the drain current to voltage in the column. Configurable pixels can be created to allow both common source read out as well as source follower read out. A plurality of the 1T pixels may form an array, having a number of rows and a number of columns and a column readout circuit in each column. 1. A device comprising:an array of chemically-sensitive field-effect transistors (chemFETs) coupled to a plurality of lines; and induce a current between the first line and the second line through the selected chemFET to establish a voltage on the second line;', 'compensate for leakage current through at least one additional chemFET coupled to the second line; and', 'read the selected chemFET based on the voltage on the second line., 'a circuit for reading a selected chemFET in the array, the selected chemFET coupled to a first line and a second line in the plurality of lines, the circuit to2. The device of claim 1 , wherein the circuit includes a current sink coupled to the second line to compensate for the leakage current.3. The device of claim 1 , wherein the voltage on the second line indicates an ion-concentration of an analyte solution coupled to the selected chemFET.4. The device of claim 1 , wherein the circuit includes a pre-charge circuit to pre-charge the second line to a pre-charge voltage level.5. The device of claim 4 , wherein the pre-charge circuit comprises a switch coupled between the second line and a reference voltage.6. The device of claim 1 , wherein the circuit includes a sample circuit to sample the voltage level on the second line to read the selected chemFET.7. The device of claim 6 , wherein the sample circuit includes a sample and hold circuit to hold an analog value of the voltage on the second line claim 6 , and an ...

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Номер записи: 50
05-09-2013 дата публикации

TWO-TRANSISTOR PIXEL ARRAY

Номер: US20130228829A1
Автор: Fife Keith G., Johnson Kim L., MILGREW Mark James
Принадлежит: LIFE TECHNOLOGIES CORPORATION

A two-transistor (2T) pixel comprises a chemically-sensitive transistor (ChemFET) and a selection device which is a non-chemically sensitive transistor. A plurality of the 2T pixels may form an array, having a number of rows and a number of columns. The ChemFET can be configured in a source follower or common source readout mode. Both the ChemFET and the non-chemically sensitive transistor can be NMOS or PMOS device. 1. A device comprising:a plurality of pairs of lines; a chemically-sensitive field-effect transistor (chemFET) including a first terminal connected to the first line, a second terminal, and a floating gate coupled to a passivation layer; and', 'a switch connected between the second terminal of the chemFET and the second line., 'an array of pixels coupled to the plurality of pairs of lines, a given pixel in the array coupled to a first line and a second line of a given pair of lines, the given pixel comprising2. The device of claim 1 , further comprising a readout circuit for reading the given pixel claim 1 , the readout circuit comprising:a bias circuit to apply a bias voltage to one of the first and second lines of the given pair of lines, and to apply the select signal to turn on the switch; anda sense circuit to read the given pixel based on a voltage on the other of the first and second lines of the given pair of lines.3. The device of claim 2 , wherein the voltage indicates an ion-concentration of an analyte solution coupled to the chemFET of the given pixel.4. The device of claim 2 , wherein the sense circuit includes a pre-charge circuit to pre-charge the other of the first and second lines of the given pair to a pre-charge voltage prior to a read interval for the given pixel.5. The device of claim 2 , wherein the sense circuit includes a sample circuit to sample the voltage on the second line.6. The device of claim 5 , wherein the sample circuit includes a sample and hold circuit to hold an analog value of the voltage on the second line claim 5 ...

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Номер записи: 51
03-01-2019 дата публикации

UNIVERSAL ULTRASOUND DEVICE AND RELATED APPARATUS AND METHODS

Номер: US20190000418A1
Автор: Alie Susan A., Cristman Paul Francis, de Jonge Matthew, Fife Keith G., McNulty Christopher Thomas, Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J., Zahorian Jaime Scott
Принадлежит:

A system comprising a multi-modal ultrasound probe configured to operate in a plurality of operating modes associated with a respective plurality of configuration profiles; and a computing device coupled to the handheld multi-modal ultrasound probe and configured to, in response to receiving input indicating an operating mode selected by a user, cause the multi-modal ultrasound probe to operate in the selected operating mode. 1. An ultrasound sensor , comprisinga substrate,a plurality of circular or square ultrasonic transducers on the substrate;a membrane configured to vibrate in response to a changing voltage differential applied to the ultrasonic transducers, the membrane having a thickness of less than or equal to 5 microns and at least partially bounding at least one of the plurality of ultrasonic transducers.2. The ultrasound sensor of claim 1 , further comprising control circuitry on the substrate configured to apply a peak-to-peak AC voltage in a range of 16-41 V to the plurality of ultrasonic transducers.3. The ultrasound sensor of claim 1 , wherein the plurality of ultrasonic transducers are configured to operate in a frequency range of 1-15 MHz.4. The ultrasound sensor of claim 1 , wherein the plurality of ultrasonic transducers form an array.5. The ultrasound sensor of claim 4 , wherein the array has a pitch of about 52 microns.6. The ultrasound sensor of claim 1 , wherein at least one of the plurality of ultrasonic transducers is configured to operate in a collapsed mode and at least one of the plurality of ultrasonic transducers is configured to operate in a non-collapsed mode.7. The ultrasound sensor of claim 1 , wherein:the plurality of ultrasonic transducers are configured to detect ultrasound signals having frequencies in a first frequency range, at a first depth relative to a subject;the plurality of ultrasonic transducers are configured to detect ultrasound signals having frequencies in a second frequency range, at a second depth relative to the ...

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Номер записи: 52
04-01-2018 дата публикации

MICROFABRICATED ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20180003678A1
Автор: Alie Susan A., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature. 1. An ultrasound device , comprising a wire bond contacting an electrode region of a capacitive micromachined ultrasonic transducer (CMUT).2. The ultrasound device of claim 1 , wherein the CMUT comprises a cavity and the electrode region comprises a membrane at least partially sealing the cavity.3. An ultrasound device claim 1 , comprising:a first substrate having a capacitive micromachined ultrasonic transducer (CMUT) flush with a top surface of the first substrate, the CMUT comprising a cavity and a silicon layer at least partially sealing the cavity;a node disposed on the silicon layer;a second substrate having an integrated circuit formed therein, the second substrate bonded to the first substrate;a bond pad disposed on the second substrate and electrically connected to the integrated circuit; anda conductive path disposed between the node and the bond pad, wherein the conductive path is external to the first and second substrates.4. The ultrasound device of claim 3 , wherein the conductive path comprises a wire bond.5. The ultrasound device of claim 3 , wherein the conductive path comprises a conductive material that is deposited between the node and the bond pad.6. The ultrasound device of claim 3 , further comprising a region of the first substrate that has been etched away and in which the bond pad is located.7. The ultrasound device of claim 3 , wherein the silicon layer is doped.8. The ultrasound device of claim 7 , wherein the silicon layer is doped with a doping concentration greater than ...

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Номер записи: 53
14-01-2016 дата публикации

MICROFABRICATED ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20160009544A1
Автор: Alie Susan A., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature. 1. A method of bonding an engineered substrate having first and second wafers bonded together , the first wafer having an isolation trench isolating an electrode region of the first wafer , the method comprising:forming a redistribution layer on an integrated circuit (IC) wafer having an IC;forming a solder bump array on the redistribution layer; andsolder bump bonding the engineered substrate with the IC wafer such that the first wafer of the engineered substrate is between the IC wafer and the second wafer of the engineered substrate,wherein a first solder bump of the solder bump array electrically contacts the electrode region of the first wafer.2. The method of claim 1 , wherein the first wafer includes a first side proximate the second wafer and a second side distal the second wafer claim 1 , and wherein the method further comprises claim 1 , prior to solder bump bonding the engineered substrate with the IC wafer claim 1 , forming a redistribution layer on the second side of the first wafer.3. The method of claim 1 , wherein the engineered substrate comprises a plurality of cavities in the first wafer or second wafer claim 1 , wherein a first cavity of the plurality of cavities is aligned with the electrode region.4. The method of claim 1 , wherein solder bump bonding the engineered substrate with the IC wafer is performed in a wafer-scale packaging foundry.5. The method of claim 1 , further comprising dicing the engineered substrate and IC wafer subsequent to solder bump bonding the engineered ...

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Номер записи: 54
14-01-2016 дата публикации

MICROFABRICATED ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20160009549A1
Автор: Alie Susan A., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature. 1. A method , comprising:forming a plurality of cavities in a layer of silicon oxide on a first side of a first wafer, the first wafer having a second side opposite the first side;bonding a second wafer with the first wafer such that the second wafer seals the plurality of cavities in the layer of silicon oxide;annealing the first wafer and the second wafer after bonding them together the annealing utilizing a first temperature;thinning the first wafer or the second wafer after the annealing to create a thinned wafer;etching a plurality of trenches in the thinned wafer, the plurality of trenches defining a plurality of electrode regions of the thinned wafer;filling the plurality of trenches in the thinned wafer with an insulating material;forming metal contacts on the plurality of electrode regions of the thinned wafer;aligning the thinned wafer with an integrated circuit wafer having integrated circuitry formed therein;bonding the thinned wafer with the integrated circuit wafer having integrated circuitry formed therein using the metal contacts on the thinned wafer to contact bonding points on the integrated circuit wafer, wherein bonding the thinned wafer with the integrated circuit wafer is performed at a second temperature less than the first temperature; andforming a flexible membrane by thinning, after bonding the thinned wafer with the integrated circuit wafer, the first wafer or the second wafer, whichever was not previously thinned as part of forming the thinned wafer.2. The method of claim 1 ...

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Номер записи: 55
09-01-2020 дата публикации

METHODS AND APPARATUSES FOR PACKAGING AN ULTRASOUND-ON-A-CHIP

Номер: US20200013691A1
Автор: Fife Keith G., Liu Jianwei
Принадлежит:

Described herein are methods and apparatuses for packaging an ultrasound-on-a-chip. An ultrasound-on-a-chip may be coupled to a redistribution layer and to an interposer layer. Encapsulation may encapsulate the ultrasound-on-a-chip device and first metal pillars may extend through the encapsulation and electrically couple to the redistribution layer. Second metal pillars may extend through the interposer layer. The interposer layer may include aluminum nitride. The first metal pillars may be electrically coupled to the second metal pillars. A printed circuit board may be coupled to the interposer layer. 1. An apparatus comprising:an ultrasound-on-a-chip comprising a top surface and a bottom surface;an interposer layer comprising a top surface and a bottom surface; anda redistribution layer; the top surface of the ultrasound-on-a-chip device is coupled to the redistribution layer; and', 'the bottom surface of the ultrasound-on-a chip device is coupled to the top surface of the interposer layer., 'wherein2. The apparatus of claim 1 , further comprising:encapsulation encapsulating the ultrasound-on-a-chip device; andfirst metal pillars extending through the encapsulation and electrically coupling to the redistribution layer.3. The apparatus of claim 2 , wherein the interposer layer comprises second metal pillars extending through the interposer layer.4. The apparatus of claim 3 , wherein the interposer layer comprises aluminum nitride.5. The apparatus of claim 3 , wherein the first metal pillars are electrically coupled to the second metal pillars.6. The apparatus of claim 3 , wherein the first metal pillars are aligned with the second metal pillars.7. The apparatus of claim 3 , wherein solder balls electrically couple the first metal pillars to the second metal pillars.8. The apparatus of claim 2 , further comprising a printed circuit board coupled to the bottom surface of the interposer layer.9. The apparatus of claim 3 , further comprising a printed circuit board ...

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Номер записи: 56
16-01-2020 дата публикации

LOW FIELD MAGNETIC RESONANCE IMAGING METHODS AND APPARATUS

Номер: US20200018806A1
Автор: Charvat Gregory L., Fife Keith G., Mileski William J., Poole Michael Stephen, REARICK Todd, Rosen Matthew Scot, Rothberg Jonathan M.
Принадлежит: Hyperfine Research, Inc.

According to some aspects, a laminate panel is provided. The laminate panel comprises at least one laminate layer including at least one non-conductive layer and at least one conductive layer patterned to form at least a portion of a Bcoil configured to contribute to a Bfield suitable for use in low-field magnetic resonance imaging (MRI). 1. A laminate panel comprising: at least one first laminate layer having patterned thereon an x-gradient coil configured to, when operated, generate or contribute to a magnetic field to provide spatial encoding of emitted magnetic resonance (MR) signals in an x direction;', 'at least one second laminate layer having patterned thereon an y-gradient coil configured to, when operated, generate or contribute to a magnetic field to provide spatial encoding of emitted MR signals in a y direction;', 'at least one third laminate layer having patterned thereon an z-gradient coil configured to, when operated, generate or contribute to a magnetic field to provide spatial encoding of emitted magnetic resonance (MR) in a z direction; and, 'a plurality of laminate layers, each of the plurality of laminate layers including at least one non-conductive layer and at least one conductive layer patterned to form at least a portion of a magnetics component for use in low-field magnetic resonance imaging (MRI), the plurality of laminate layers comprisinga plurality of electrical connections between the plurality of laminate layers consisting of through-hole vias provided through the plurality of laminate layers of the laminate panel.2. The laminate panel of claim 1 , wherein the laminate panel does not include a via provided only through a subset of the plurality of laminate layers.3. The laminate panel of claim 1 , wherein the plurality of layers comprises a top laminate layer claim 1 , a bottom laminate layer claim 1 , and a plurality of intervening laminate layers claim 1 , and wherein the plurality of electrical connections consist of through-hole ...

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Номер записи: 57
25-01-2018 дата публикации

LOW FIELD MAGNETIC RESONANCE IMAGING METHODS AND APPARATUS

Номер: US20180024208A1
Автор: Charvat Gregory L., Fife Keith G., Mileski William J., Poole Michael Stephen, REARICK Todd, Rosen Matthew Scot, Rothberg Jonathan M.
Принадлежит: Hyperfine Research, Inc.

According to some aspects, a laminate panel is provided. The laminate panel comprises at least one laminate layer including at least one non-conductive layer and at least one conductive layer patterned to form at least a portion of a Bcoil configured to contribute to a Bfield suitable for use in low-field magnetic resonance imaging (MRI). 1. A laminate panel comprising: at least one first laminate layer having patterned thereon an x-gradient coil configured to, when operated, generate or contribute to a magnetic field to provide spatial encoding of emitted magnetic resonance (MR) signals in an x direction;', 'at least one second laminate layer having patterned thereon an y-gradient coil configured to, when operated, generate or contribute to a magnetic field to provide spatial encoding of emitted MR signals in a y direction;', 'at least one third laminate layer having patterned thereon an z-gradient coil configured to, when operated, generate or contribute to a magnetic field to provide spatial encoding of emitted magnetic resonance (MR) in a z direction; and, 'a plurality of laminate layers, each of the plurality of laminate layers including at least one non-conductive layer and at least one conductive layer patterned to form at least a portion of a magnetics component for use in low-field magnetic resonance imaging (MRI), the plurality of laminate layers comprisinga plurality of electrical connections between the plurality of laminate layers consisting of through-hole vias provided through the plurality of laminate layers of the laminate panel.2. The laminate panel of claim 1 , wherein the laminate panel does not include a via provided only through a subset of the plurality of laminate layers.3. The laminate panel of claim 1 , wherein the plurality of layers comprises a top laminate layer claim 1 , a bottom laminate layer claim 1 , and a plurality of intervening laminate layers claim 1 , and wherein the plurality of electrical connections consist of through-hole ...

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Номер записи: 58
10-02-2022 дата публикации

LOW FIELD MAGNETIC RESONANCE IMAGING METHODS AND APPARATUS

Номер: US20220043088A1
Автор: Charvat Gregory L., Fife Keith G., Mileski William J., Poole Michael Stephen, REARICK Todd, Rosen Matthew Scot, Rothberg Jonathan M.
Принадлежит: Hyperfine, Inc.

According to some aspects, a laminate panel is provided. The laminate panel comprises at least one laminate layer including at least one non-conductive layer and at least one conductive layer patterned to form at least a portion of a Bcoil configured to contribute to a Bfield suitable for use in low-field magnetic resonance imaging (MRI). 1. A magnetic resonance imaging (MRI) system , comprising:{'sub': 0', '0, 'a Bmagnet configured to generate a magnetic field to contribute to a Bmagnetic field for the MRI system; and'} a first laminate layer having patterned thereon a gradient coil configured to, when operated, generate or contribute to a magnetic field to provide spatial encoding of emitted magnetic resonance (MR) signals; and', {'sub': '0', 'a second laminate layer having patterned thereon a coil configured to generate a magnetic field to contribute to the Bmagnetic field.'}], 'at least one laminate panel comprising a plurality of laminate layers, the plurality of laminate layers comprising2. The MRI system of claim 1 , wherein the at least one laminate panel comprises a first laminate panel and a second laminate panel claim 1 , and wherein the first laminate panel and the second laminate panel are arranged in a bi-planar configuration.3. The MRI system of claim 1 , where the first laminate layer comprises:at least one laminate layer having patterned thereon an x-gradient coil configured to, when operated, generate or contribute to a magnetic field to provide spatial encoding of emitted magnetic resonance (MR) signals in an x direction;at least one laminate layer having patterned thereon an y-gradient coil configured to, when operated, generate or contribute to a magnetic field to provide spatial encoding of emitted MR signals in a y direction; andat least one laminate layer having patterned thereon an z-gradient coil configured to, when operated, generate or contribute to a magnetic field to provide spatial encoding of emitted magnetic resonance (MR) in a z ...

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Номер записи: 59
24-01-2019 дата публикации

OPTICAL REJECTION PHOTONIC STRUCTURES

Номер: US20190025511A1
Автор: Beach James, Fife Keith G., Ghasemi Farshid, Gondarenko Alexander, Jewell Jack, Kabiri Ali, Lackey Jeremy, Preston Kyle, Rothberg Jonathan M., Schmid Gerard
Принадлежит: Quantum-Si incorporated

An integrated device and related instruments and systems for analyzing samples in parallel are described. The integrated device may include sample wells arranged on a surface of where individual sample wells are configured to receive a sample labeled with at least one fluorescent marker configured to emit emission light in response to excitation light. The integrated device may further include photodetectors positioned in a layer of the integrated device, where one or more photodetectors are positioned to receive a photon of emission light emitted from a sample well. The integrated device further includes one or more photonic structures positioned between the sample wells and the photodetectors, where the one or more photonic structures are configured to attenuate the excitation light relative to the emission light such that a signal generated by the one or more photodetectors indicates detection of photons of emission light. 1. An integrated device comprising:a plurality of sample wells arranged on a first layer of the integrated device, wherein individual sample wells of the plurality of sample wells are configured to receive a sample labeled with at least one fluorescent marker configured to emit emission light in response to excitation light;a plurality of photodetectors arranged on a second layer of the integrated device and positioned to receive photons of emission light emitted from the plurality of sample wells, wherein individual sample wells of the plurality of sample wells align with at least one photodetector of the plurality of photodetectors; andat least one photonic structure positioned between an individual sample well and its respective at least one photodetector, the at least one photonic structure configured to attenuate the excitation light relative to the emission light, wherein a signal generated by the at least one photodetector indicates detection of photons of emission light.2. The integrated device of claim 1 , wherein the at least one ...

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Номер записи: 60
28-01-2021 дата публикации

INTEGRATED DEVICE FOR TEMPORAL BINNING OF RECEIVED PHOTONS

Номер: US20210025823A1
Автор: Boisvert David M., Fife Keith G., Rothberg Jonathan M.
Принадлежит: Quantum-Si incorporated

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced. 120-. (canceled)21. An integrated circuit , comprising:a photodetection region;a first charge carrier storage region;a second charge carrier storage region; anda floating diffusion region, receive, at the photodetection region in response to an excitation light pulse, a plurality of excitation photons;', 'discard a plurality of charge carriers generated in the photodetection region in response to receiving the plurality of excitation photons in the photodetection region;', 'receive, at the photodetection region after receiving the plurality of excitation photons, a first plurality of fluorescence photons;', 'transfer, from the photodetection region to the first charge carrier storage region, a first plurality of fluorescence charge carriers generated in the photodetection region in response to receiving the first plurality of fluorescence photons;', 'receive, at the photodetection region after receiving the first plurality of fluorescence photons, a second plurality of fluorescence photons;', 'transfer, from the photodetection region to the second charge carrier storage region, a second plurality of fluorescence charge carriers generated in the photodetection region in response to receiving the second plurality of fluorescence photons;', 'transfer, from the first charge carrier storage region to the floating diffusion region, a first number of charge carriers stored in the first charge carrier storage region ...

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Номер записи: 61
28-01-2021 дата публикации

Integrated photodetector with direct binning pixel

Номер: US20210025824A1
Автор: David M. Boisvert, Jonathan M. Rothberg, Keith G. Fife
Принадлежит: Quantum Si Inc

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

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Номер записи: 62
29-01-2015 дата публикации

INTERCONNECTABLE ULTRASOUND TRANSDUCER PROBES AND RELATED METHODS AND APPARATUS

Номер: US20150032002A1
Автор: Charvat Gregory L., Corteville Gregory, Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Ultrasound devices and methods are described, including a repeatable ultrasound transducer probe having ultrasonic transducers and corresponding circuitry. The repeatable ultrasound transducer probe may be used individually or coupled with other instances of the repeatable ultrasound transducer probe to create a desired ultrasound device. The ultrasound devices may optionally be connected to various types of external devices to provide additional processing and image rendering functionality. 1. An apparatus , comprising:a substrate;a plurality of ultrasonic transducers on the substrate;control circuitry on the substrate, coupled to the plurality of ultrasonic transducers and configured to control operation of the plurality of ultrasonic transducers;a first interface, the first interface being of a first type; anda second interface, the second interface being of a second type, the first and second interfaces being individually configured to transfer electronic signals between the control circuitry and an external device.2. The apparatus of claim 1 , wherein the first type of interface is a lower speed interface than the second type of interface.3. The apparatus of claim 2 , wherein the apparatus comprises a third interface claim 2 , the third interface being of the second type and being configured to transfer electronic signals between the control circuitry and the external device.4. The apparatus of claim 3 , wherein the apparatus comprises in the range of four times to ten times as many interfaces of the second type as interfaces of the first type.5. The apparatus of claim 2 , wherein the second interface is configured to operate at speeds greater than approximately 4 gigabits per second (Gbps).6. The apparatus of claim 5 , wherein the second interface is configured to operate at speeds between approximately 4 Gbps and approximately 50 Gbps.7. The apparatus of claim 1 , wherein the first interface and/or the second interface is/are formed on the substrate.8. The ...

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Номер записи: 63
28-01-2021 дата публикации

METHODS AND APPARATUSES FOR TURNING ON AND OFF AN ADC DRIVER IN AN ULTRASOUND DEVICE

Номер: US20210028792A1
Автор: Chen Kailiang, Fife Keith G., Hwang Sewook, Sanchez Nevada J., YANG Jungwook
Принадлежит: Butterfly Network, Inc.

Aspects of the technology described herein relate to control circuitry configured to turn on and off the ADC driver. In some embodiments, the control circuitry is configured to turn on and off the ADC driver in synchronization with sampling activity of an ADC, in particular based on when an ADC is sampling. The control circuitry may be configured to turn on the ADC driver during the hold phase of the ADC a time period before the track phase and to turn off the ADC driver during the hold phase a time period after the track phase. In some embodiments, the control circuitry is configured to control a duty cycle of the ADC driver turning on and off. In some embodiments, the control circuitry is configured to control a ratio between an off current and an on current in the ADC driver. 1. An ultrasound device , comprising:control circuitry; andan analog-to-digital converter (ADC) driver coupled to the control circuitry;wherein the control circuitry is configured to turn on and off the ADC driver.2. The ultrasound device of claim 1 , wherein the control circuitry is configured to turn on and off the ADC driver in synchronization with sampling activity of an ADC.3. The ultrasound device of claim 1 , wherein the control circuitry is configured to turn on and off the ADC driver based on when an ADC is sampling.4. The ultrasound device of claim 1 , wherein the control circuitry is configured to control a duty cycle of the ADC driver turning on and off.5. The ultrasound device of claim 4 , wherein the control circuitry is configured to control the duty cycle of the ADC driver turning on and off by selecting a duty cycle value from among multiple possible duty cycle values.6. The ultrasound device of claim 5 , where the multiple possible duty cycle values comprise three or more possible duty cycle values.7. The ultrasound device of claim 1 , wherein the control circuitry is configured to control a ratio between a current in the ADC driver when the ADC driver is turned off and a ...

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Номер записи: 64
04-02-2016 дата публикации

COLUMN ADC

Номер: US20160033449A1
Автор: Fife Keith G.
Принадлежит:

The described embodiments may provide a chemical detection circuit. The chemical detection circuit may comprise a column of chemically-sensitive pixels. Each chemically-sensitive pixel may comprise a chemically-sensitive transistor, and a row selection device. The chemical detection circuit may further comprise a column interface circuit coupled to the column of chemically-sensitive pixels and an analog-to-digital converter (ADC) coupled to the column interface circuit. Each column interface circuit and column-level ADC may be arrayed with other identical circuits and share critical resources such as biasing and voltage references, thereby saving area and power. 1. A method of generating an output signal for a chemical detection circuit , comprising: a chemically-sensitive transistor; and', 'a row selection device;, 'generating a row selection signal by a row decoder of the chemical detection circuit, the chemical detection circuit having a pixel array that includes a column of chemical detection pixels, each chemical detection pixel includingapplying the row selection signal to a respective row selection device of a selected chemical detection pixel;converting an analog signal at a readout signal line of the column of chemical detection pixels to a digital signal by an Analog-to-Digital converter (ADC); andoutputting the converted digital signal as the output signal for the chemical detection circuit.2. The method of claim 1 , wherein each column of chemical detection pixels has a dedicated ADC.3. The method of claim 1 , wherein two columns of chemical detection pixels share one ADC by multiplexing.4. The method of claim 1 , wherein the chemical detection circuit includes multiple columns of chemical detection pixels and multiple ADCs claim 1 , the ADCs are configured to perform AD conversion in parallel.5. The method of claim 4 , wherein the ADCs share bias reference voltages and signal reference voltages for area and power savings. This application is a ...

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Номер записи: 65
18-02-2016 дата публикации

Systems and Methods for Genetic Sequencing

Номер: US20160047747A1
Автор: Fife Keith G., LAFFERTY Michael M., NORDMAN Eric, Oldham Mark, Rothberg Jonathan M.
Принадлежит:

A device including a transparent layer defining a surface exposed to a flow volume and to secure a target polynucleotide template and a detector structure secured to the transparent layer and including a plurality of detectors to detect a signal emitted during nucleotide incorporation along the target polynucleotide template. 1165.-. (canceled)166. A device comprising:a transparent layer defining a surface exposed to a flow volume and to secure a target polynucleotide template; anda detector structure in optical communication with and secured to the transparent layer and including a plurality of detectors configured to detect a fluorescent signal emitted during nucleotide incorporation during template-dependent nucleic acid synthesis.167. The device of claim 166 , wherein the detector structure includes a plurality of pixels claim 166 , each pixel of the plurality of pixels including at least two detectors of the plurality of detectors.168. The device of claim 167 , wherein the at least two detectors are disposed adjacent one anther within a plan view.169. The device of claim 167 , where the at least two detectors are disposed one over the other when viewed in cross-section.170. The device of claim 167 , wherein each pixel includes at least three detectors.171. The device of claim 170 , wherein each pixel includes at least four detectors.172. The device of claim 166 , wherein the transparent layer includes an energy propagation layer.173. The device of claim 166 , further comprising an energy propagation layer disposed between the transparent layer and the detector structure.174. The device of claim 173 , wherein the energy propagation layer includes a total internal reflection layer.175. The device of claim 173 , further comprising an energy emitting component to provide energy to the energy propagation layer.176. The device of claim 166 , further comprising a separator structure extending from the detector structure toward the transparent layer claim 166 , the ...

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Номер записи: 66
14-02-2019 дата публикации

MICROFABRICATED ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20190047850A1
Автор: Alie Susan A., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J., Zahorian Jaime Scott
Принадлежит: Butterfly Network, Inc.

Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature. 1. A method of fabricating an ultrasound device , the method comprising:forming, in a first wafer having a first silicon device layer and a dielectric layer, a plurality of cavities by completely etching through a first thickness of the dielectric layer and by partially etching through a second thickness of the first silicon device layer; andbonding a second wafer, having a second silicon device layer, with the first wafer so that the plurality of cavities are disposed between the first device layer and the second device layer.2. The method of claim 1 , wherein bonding the second wafer with the first wafer comprises annealing the bonded first and second wafers at a temperature greater than 500° C.3. The method of claim 1 , wherein bonding the second wafer with the first wafer comprises forming a Si—SiObond or a SiO—SiObond.4. The method of claim 1 , further comprising thinning a portion of the second silicon device layer.5. The method of claim 1 , further comprising bonding a CMOS wafer with the bonded first and second wafers at a temperature that is less than 450° C.6. The method of claim 5 , further comprising placing a bonding material in contact with the second silicon device layer claim 5 , and wherein bonding the CMOS wafer with the bonded first and second wafers comprises placing a metallization layer of the CMOS wafer electrically in contact with the bonding material.7. The method of claim 1 , wherein the first wafer is a silicon-on-insulator (SOI) wafer and the second wafer is a bulk silicon ...

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Номер записи: 67
20-02-2020 дата публикации

CHEMICAL SENSOR ARRAY HAVING MULTIPLE SENSORS PER WELL

Номер: US20200057021A1
Автор: Bustillo James, Fife Keith G., OWENS Jordan, Rothberg Jonathan M.
Принадлежит:

In one embodiment, a device is described. The device includes a material defining a reaction region. The device also includes a plurality of chemically-sensitive field effect transistors have a common floating gate in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region. 1. A method of operating a device , the method comprising:initiating a chemical reaction within a reaction region coupled to a group of two or more chemical sensors;obtaining individual output signals for the chemical sensors in the group;calculating a resultant output signal for the group based on one or more of the individual output signals.2. The method of claim 1 , further comprising determining a characteristic of the chemical reaction based on the resultant output signal.3. The method of claim 1 , wherein calculating the resultant output signal comprises averaging two or more of the individual output signals.4. The method of claim 1 , the group of chemical sensors includes a plurality of chemically-sensitive field effect transistors having a common floating gate in communication with the reaction region.5. The method of claim 4 , wherein the chemically-sensitive field effect transistors include respective floating gate structures coupled to one another via a conductive element.6. The method of claim 5 , wherein the respective floating gate structures include a plurality of conductors electrically coupled to one another and separated by dielectric layers claim 5 , and the conductive element is an uppermost conductor in the plurality of conductors of the respective floating gate structures.7. The method of claim 1 , wherein a width of an uppermost conductive element of the common floating gate is less than a width of a bottom surface of the reaction region.8. The method of claim 1 , wherein a bottom surface of the reaction region ...

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Номер записи: 68
05-03-2015 дата публикации

CHEMICAL SENSOR WITH SIDEWALL SPACER SENSOR SURFACE

Номер: US20150064829A1
Автор: Bustillo James, Fife Keith G., OWENS Jordan
Принадлежит:

In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor. 1. A method for manufacturing a chemical sensor , the method comprising:forming a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface;forming a dielectric material defining an opening extending to the upper surface of the floating gate conductor; andforming a conductive sidewall spacer on a sidewall of the opening and contacting the floating gate conductor.2. The method of claim 1 , wherein forming the conductive sidewall spacer comprises:depositing a conductive material within the opening;etching the conductive material to expose the upper surface of the floating gate conductor.3. The method of claim 1 , wherein:depositing the conductive material includes depositing the conductive material on an upper surface of the dielectric material; andetching the conductive material exposes the upper surface of the dielectric material.4. The method of claim 1 , wherein the conductive sidewall spacer includes an inner surface surrounding a reaction region for the chemical sensor.5. The method of claim 4 , wherein the inner surface of the conductive sidewall spacer is an outer surface of the reaction region claim 4 , and the upper surface of the floating gate conductor is a bottom surface of the reaction region.6. The method of claim 1 , wherein the conductive sidewall spacer comprises an electrically conductive material claim 1 , and an inner surface of the conductive sidewall spacer includes an oxide of the electrically conductive material.7. The method of claim 1 , wherein a sensing surface for the chemical sensor ...

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Номер записи: 69
27-02-2020 дата публикации

ELECTRICAL CONTACT ARRANGEMENT FOR MICROFABRICATED ULTRASONIC TRANSDUCER

Номер: US20200066966A1
Автор: Alie Susan A., Cristman Paul Francis, Fife Keith G., Rothberg Jonathan M., Zahorian Jaime Scott
Принадлежит: Butterfly Network, Inc.

An ultrasound-on-a-chip device has an ultrasonic transducer substrate with plurality of transducer cells, and an electrical substrate. For each transducer cell, one or more conductive bond connections are disposed between the ultrasonic transducer substrate and the electrical substrate. Examples of electrical substrates include CMOS chips, integrated circuits including analog circuits, interposers and printed circuit boards. 1. An apparatus , comprising:an ultrasound-on-a-chip device comprising an ultrasonic transducer substrate having a plurality of ultrasonic transducer cells; andfor each of first and second ultrasonic transducer cells of the plurality of ultrasonic transducer cells, multiple conductive bond connections disposed between the ultrasonic transducer substrate and an integrated circuit substrate.2. The apparatus of claim 1 , wherein the first and second ultrasonic transducer cells are disposed proximate a first side of the ultrasonic transducer substrate and the multiple conductive bond connections are disposed between a second side of the ultrasonic transducer substrate and the integrated circuit substrate.3. The apparatus of claim 2 , wherein the multiple conductive bond connections of the first ultrasonic transducer cell of the plurality of ultrasonic transducer cells are distributed substantially evenly with respect to an area of the first ultrasonic transducer cell.4. The apparatus of claim 2 , wherein the multiple conductive bond connections comprise one or more of: thermal compression connections claim 2 , eutectic connections or silicide connections.5. The apparatus of claim 2 , wherein the multiple conductive bond connections of the first and second ultrasonic transducer cells contact a conductive portion of a silicon layer of the ultrasonic transducer substrate at a first end thereof claim 2 , and a metal layer of the integrated circuit substrate at a second end thereof.6. The apparatus of claim 2 , further comprising a plurality of ...

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Номер записи: 70
15-03-2018 дата публикации

ANALOG-TO-DIGITAL DRIVE CIRCUITRY HAVING BUILT-IN TIME GAIN COMPENSATION FUNCTIONALITY FOR ULTRASOUND APPLICATIONS

Номер: US20180070925A1
Автор: Chen Kailiang, Fife Keith G.
Принадлежит: Butterfly Network, Inc.

A time gain compensation (TGC) circuit for an ultrasound device includes a first amplifier having an integrating capacitor and a control circuit configured to generate a TGC control signal that controls an integration time of the integrating capacitor, thereby controlling a gain of the first amplifier. The integration time is an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier. 1. A time gain compensation (TGC) circuit for an ultrasound device , comprising:a first amplifier having a first integrating capacitor; anda control circuit configured to control a gain of the first amplifier by generating a TGC control signal that controls an integration time of the first integrating capacitor, the integration time comprising an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier.2. The TGC circuit of claim 1 , wherein the first amplifier comprises a differential amplifier.3. The TGC circuit of claim 2 , wherein the differential amplifier comprises an analog-to-digital converter (ADC) driver.4. The TGC circuit of claim 1 , wherein the control circuit further comprises:a second amplifier having a feedback capacitor, the second amplifier configured as a comparator circuit, wherein the control circuit generates the TGC control signal by a comparison between an output voltage of the second amplifier and a threshold voltage determined by a value of a variable gain control input signal.5. The TGC circuit of claim 4 , wherein the second amplifier comprises an operational amplifier.6. The TGC circuit of claim 1 , wherein the integration time controlled by the TGC control signal is dependent upon an RC time constant of the control circuit and a voltage of the variable gain control input signal.7. The TGC circuit of claim 6 , wherein an output gain of the first amplifier is proportional to a ratio between resistance and capacitance ...

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Номер записи: 71
07-03-2019 дата публикации

WRIST BOUND ULTRASOUND-ON-A-CHIP DEVICE

Номер: US20190069842A1
Автор: Chen Kailiang, Fergus Gregg, Fife Keith G., McNulty Christopher Thomas, Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J., Zahorian Jaime Scott
Принадлежит:

Aspects of the technology described herein relate to an apparatus including an ultrasound-on-a-chip device configured to be bound to a user's wrist. The ultrasound-on-a-chip device may include a two-dimensional array of ultrasonic transducers. The transducers may be capacitive micromachined ultrasonic transducers (CMUTs) and may be configured to emit ultrasound waves having a frequency between approximately 5-20 MHz. A coupling strip may be coupled to the ultrasound-on-a-chip device to reduce the air gap between the ultrasound-on-a-chip device and the user's wrist. The ultrasound-on-a-chip device may be waterproof and may be able to perform both transverse and longitudinal ultrasound scanning without being rotated. The ultrasound-on-a-chip device may be configured to calculate pulse wave velocity through a blood vessel in a user's wrist. 1. An apparatus comprising an ultrasound-on-a-chip device configured to be bound to a user's wrist.2. The apparatus of claim 1 , wherein the ultrasound-on-a-chip device is waterproof.3. The apparatus of claim 1 , wherein the ultrasound-on-a-chip device is configured to perform both transverse and longitudinal ultrasound scanning of a blood vessel in the user's wrist without being rotated relative to the user's wrist.4. The apparatus of claim 1 , wherein the ultrasound-on-a-chip device comprises a two-dimensional array of capacitive micromachined ultrasonic transducers (CMUTs).5. The apparatus of claim 1 , wherein the ultrasound-on-a-chip device comprises a plurality of capacitive micromachined ultrasonic transducers (CMUTs) configured to emit ultrasound waves having a frequency between approximately 5-20 MHz.6. The apparatus of claim 1 , further comprising:at least one wristband;an ultrasound module containing the ultrasound-on-a-chip device and coupled to the at least one wristband; anda coupling strip coupled to the ultrasound module and configured to couple the ultrasound module to the user's wrist.7. The apparatus of claim 6 , ...

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Номер записи: 72
05-03-2020 дата публикации

Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections

Номер: US20200070206A1
Автор: David Grosjean, Joseph Lutsky, Keith G. Fife, Susan A. Alie
Принадлежит: Butterfly Network Inc

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

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Номер записи: 73
17-03-2016 дата публикации

Chemical Sensor with Consistent Sensor Surface Areas

Номер: US20160077045A1
Автор: Bustillo James, Fife Keith G., LI Shifeng, OWENS Jordan
Принадлежит:

A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening. 1. A method for manufacturing a chemical sensor , the method comprising:forming a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface;forming a material defining an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric; andforming a conductive element contacting the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening, wherein forming the material and forming the conductive element include:forming the first dielectric on the floating gate conductor, the first dielectric defining a cavity extending to the upper surface of the floating gate conductor;depositing the second dielectric thereon;etching the second dielectric to expose the upper surface of the floating gate conductor, thereby defining an opening; andforming the conductive element within the opening.2. The method of claim 1 , wherein forming the conductive element within the opening comprises:depositing a conductive material within the opening and on an upper surface of the first dielectric; andremoving at least a portion of the conductive material from the upper surface of the second dielectric.3. The method of claim 2 , wherein removing at least the portion of the conductive material comprises:depositing a layer of photoresist within the opening and; andremoving at least a portion of the conductive material together with the photoresist from the upper ...

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Номер записи: 74
19-03-2015 дата публикации

INTERCONNECTABLE ULTRASOUND TRANSDUCER PROBES AND RELATED METHODS AND APPARATUS

Номер: US20150080724A1
Автор: Charvat Gregory L., Corteville Gregory, Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Ultrasound devices and methods are described, including a repeatable ultrasound transducer probe having ultrasonic transducers and corresponding circuitry. The repeatable ultrasound transducer probe may be used individually or coupled with other instances of the repeatable ultrasound transducer probe to create a desired ultrasound device. The ultrasound devices may optionally be connected to various types of external devices to provide additional processing and image rendering functionality. 1. An apparatus , comprising:a semiconductor substrate having a width and height, the width being at least twice as large as the height, the substrate having a top metal layer having a thickness between approximately 0.5 microns and approximately 10 microns;a plurality of complementary metal oxide semiconductor (CMOS) ultrasonic transducers integrated with the substrate, wherein at least one CMOS ultrasonic transducer of the plurality of CMOS ultrasonic transducers is disposed above the top metal layer; andCMOS control circuitry on the substrate, coupled to the plurality of CMOS ultrasonic transducers and configured to control the plurality of CMOS ultrasonic transducers to support one-dimensional (1D), two-dimensional (2D), and three-dimensional (3D) ultrasound imaging,wherein the CMOS control circuitry comprises a waveform generator coupled to the at least one CMOS ultrasonic transducer of the plurality of CMOS ultrasonic transducers, the waveform generator being configurable to generate any of an impulse, a continuous wave, a coded excitation, or a chirp waveform.2. The apparatus of claim 1 , wherein the plurality of CMOS ultrasonic transducers and the CMOS control circuitry represent multiple instances of an ultrasound probe tiled on the semiconductor substrate.3. The apparatus of claim 1 , wherein the CMOS control circuitry is configured to control at least some of the plurality of CMOS ultrasonic transducers to provide high intensity focused ultrasound (HIFU).4. The ...

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Номер записи: 75
26-03-2015 дата публикации

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME

Номер: US20150084053A1
Автор: Charvat Gregory L., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices. 1. An apparatus , comprising:a semiconductor wafer having a complementary metal oxide semiconductor (CMOS) integrated circuit;an electrode;an insulating material having a cavity formed at least partially therein;a conductive membrane contacting the insulating material, sealing the cavity and having a first side proximate the cavity and a second side distal the cavity, wherein the electrode, cavity, and conductive membrane together define, at least in part, an ultrasonic transducer, with the cavity being between the electrode and the conductive membrane;a conductive contact coupling the electrode to the CMOS integrated circuit; anda conductive plug embedded in the insulating material and terminating on the first side of the conductive membrane proximate the cavity without extending through the conductive membrane such that a surface of the conductive plug forms at least part of a bonding interface between the first side of the conductive membrane and the insulating material, the conductive plug electrically connecting the conductive membrane to the CMOS integrated circuit,wherein the electrode and the conductive plug are electrically isolated from each other, andwherein the apparatus lacks an electrode that is on the second side of the conductive membrane and that overlies the cavity.2. The apparatus of claim 1 , wherein the insulating material claim 1 , the electrode claim 1 , and the conductive plug are on the semiconductor wafer.3. The apparatus of claim 2 , wherein the conductive membrane comprises doped silicon.4. The apparatus of claim 3 , wherein the doped silicon is ...

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Номер записи: 76
24-03-2016 дата публикации

INTEGRATED DEVICE WITH EXTERNAL LIGHT SOURCE FOR PROBING DETECTING AND ANALYZING MOLECULES

Номер: US20160084761A1
Автор: Cipriany Benjamin, Fife Keith G., Ghasemi Farshid, Gyarfas Brett J., Kabiri Ali, Lackey Jeremy, Rothberg Jonathan M., Schmid Gerard, Sickler Jason W., West Lawrence C.
Принадлежит: Quantum-Si incorporated

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of a temporal parameter associated with the marker labeling the sample. 1. An integrated device comprising: a sample well configured to receive excitation energy from an excitation source external to the integrated device; and', 'at least one sensor positioned to receive luminescence from a sample positioned in the sample well and generate a signal that provides identification information of the sample based on the received luminescence., 'a plurality of pixels, wherein a pixel of the plurality of pixels comprises2. The integrated device of claim 1 , wherein the signal is indicative of a temporal parameter of the received luminescence.3. The integrated device of claim 2 , wherein the temporal parameter is a lifetime associated with the luminescence from the sample.4. The integrated device of claim 1 , wherein the signal is indicative of a spectrum of the luminescence.5. The integrated device of claim 4 , wherein the signal is indicative of a characteristic wavelength of the luminescence ...

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Номер записи: 77
26-03-2015 дата публикации

Monolithic ultrasonic imaging devices, systems and methods

Номер: US20150087977A1
Автор: Gregory L. Charvat, Jonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston
Принадлежит: Butterfly Network Inc

To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein.

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Номер записи: 78
31-03-2022 дата публикации

INTEGRATED DEVICE WITH EXTERNAL LIGHT SOURCE FOR PROBING DETECTING AND ANALYZING MOLECULES

Номер: US20220099575A1
Автор: Cipriany Benjamin, Fife Keith G., Ghasemi Farshid, Gyarfas Brett J., Kabiri Ali, Lackey Jeremy, Rothberg Jonathan M., Schmid Gerard, Sickler Jason W., West Lawrence C.
Принадлежит: Quantum-Si incorporated

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of a temporal parameter associated with the marker labeling the sample. 1. (canceled)2. An integrated device , comprising: a sample well configured to receive excitation energy from an excitation source external to the integrated device; and', 'at least one sensor positioned to receive luminescence from a sample positioned in the sample well and generate a signal that provides identification information of the sample based on the received luminescence., 'a plurality of pixels, wherein a pixel of the plurality of pixels comprises3. The integrated device of claim 2 , further comprising at least one waveguide configured to deliver the excitation energy to a vicinity of the sample well.4. The integrated device of claim 3 , further comprising an excitation source coupling region.5. The integrated device of claim 4 , wherein the excitation source coupling region comprises:a coupling component including a grating coupler, wherein the grating coupler is configured to receive the excitation ...

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Номер записи: 79
25-03-2021 дата публикации

SYMMETRIC RECEIVER SWITCH FOR ULTRASOUND DEVICES

Номер: US20210088638A1
Автор: Chen Kailiang, Fife Keith G., Lutsky Joseph, McMahill Daniel Rea, Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Circuitry for an ultrasound device is described. The ultrasound device may include a symmetric switch positioned between a pulser and an ultrasound transducer. The pulser may produce bipolar pulses. The symmetric switch may selectively isolate a receiver from the pulser and the ultrasound transducer during a transmit mode of the device, when the bipolar pulses are provided by the pulser to the ultrasound transducer for transmission, and may selectively permit the receiver to receive signals from the ultrasound transducer during a receive mode. The symmetric switch may be provided with a well switch to remove well capacitances in a signal path of the device. 1. An apparatus , comprising an array of symmetric receiver switches coupled between a receiving apparatus and an array of ultrasonic transducers , wherein:a first symmetric receiver switch of the array of symmetric receiver switches is comprised of a first transistor having a first gate, a first source, a first body, and a first drain, and a second transistor having a second gate, a second source, a second body, and a second drain, with the first and second gates coupled to each other, and with the first and second sources coupled to each other,the first drain is connected to a first ultrasonic transducer of the array,the second drain is connected to the receiving apparatus,during a pulse transmission (TX) mode of the apparatus, the first and second gates and the first and second sources are at a same electric potential, and, the first and second gates are at a first floating electric potential, or', 'the first and second bodies are at the first floating potential, or', 'the first and second gates and the first and second bodies are at the first floating potential., 'during a reception (RX) mode of the apparatus2. The apparatus of claim 1 , wherein claim 1 , during the TX mode claim 1 , the first and second bodies are at the same electric potential as the first and second sources.3. The apparatus of claim 1 , ...

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Номер записи: 80
21-03-2019 дата публикации

ULTRASOUND RECEIVER CIRCUITRY AND RELATED APPARATUS AND METHODS

Номер: US20190086525A1
Автор: Casper Andrew J., Chen Kailiang, Fife Keith G., Ralston Tyler S., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Methods and apparatus are described for implementing a coding scheme on ultrasound signals received by a plurality of ultrasonic transducers. The coding, and subsequent decoding, may allow for multiple ultrasonic transducers to be operated in a receive mode simultaneously while still differentiating the contribution of the individual ultrasonic transducers. Improved signal characteristics may result, including improved signal-to-noise ratio (SNR). 120-. (canceled)21. An apparatus , comprising:an ultrasonic transducer;a receive circuit coupled to the ultrasonic transducer and configured to receive an output signal from the ultrasonic transducer;a switching circuit having an input terminal and first and second output terminals, the input terminal configured to receive an output signal from the receive circuit, and the input terminal being switchably coupled to the first or second output terminals; andan analog averaging circuit having first and second input terminals coupled to the first and second output terminals, respectively, of the switching circuit.22. The apparatus of claim 21 , wherein the analog averaging circuit is configured to output an analog averaged signal representing an average of a plurality of output signals from a plurality of ultrasonic transducers claim 21 , the plurality of output signals from the plurality of ultrasonic transducers including the output signal from the ultrasonic transducer.23. The apparatus of claim 22 , wherein the analog averaging circuit is configured to output the analog averaged signal by averaging a first signal received at a first input terminal of the analog averaging circuit and a second signal received at a second input terminal of the analog averaging circuit.24. The apparatus of claim 22 , wherein:the analog averaging circuit comprises a feedback resistor; andthe apparatus further comprises a control circuit configured to control a resistance value of the feedback resistor based on a number of the plurality of ...

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Номер записи: 81
05-05-2022 дата публикации

ULTRASONIC IMAGING DEVICES, SYSTEMS AND METHODS

Номер: US20220133274A1
Автор: Charvat Gregory L., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: BFLY Operations, Inc.

To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein.

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Номер записи: 82
09-04-2015 дата публикации

METHOD AND SYSTEM FOR DELTA DOUBLE SAMPLING

Номер: US20150097610A1
Автор: Fife Keith G., YANG Jungwook
Принадлежит:

An array of sensors arranged in matched pairs of transistors with an output formed on a first transistor and a sensor formed on the second transistor of the matched pair. The matched pairs are arranged such that the second transistor in the matched pair is read through the output of the first transistor in the matched pair. The first transistor in the matched pair is forced into the saturation (active) region to prevent interference from the second transistor on the output of the first transistor. A sample is taken of the output. The first transistor is then placed into the linear region allowing the sensor formed on the second transistor to be read through the output of the first transistor. A sample is taken from the output of the sensor reading of the second transistor. A difference is formed of the two samples. 1precharging a pixel output to a first bias level, wherein the pixel includes a chemically-sensitive sensor and a select transistor that are a matched pair of transistors;sampling a reference signal sample from the select transistor in the pixel;canceling offset and mismatch signal artifacts from the reference sample to leave an offset and mismatch correction signal at a circuit node;selecting an input signal from the chemically-sensitive sensor in the pixel, wherein the selected input signal is sampled;adjusting the sampled input signal according to the offset and mismatch correction signal at the circuit node; andconverting the adjusted sampled input signal from an analog signal to a digital signal.. A method to attenuate circuit component offsets and mismatches, comprising: This application is a continuation of U.S. patent application Ser. No. 14/334,291 filed Jul. 17, 2014 which is a continuation of U.S. patent application Ser. No. 13/173,851 filed Jun. 30, 2011, now issued U.S. Pat. No. 8,796,036, which claims the benefit of U.S. Provisional Patent Application Ser. No. 61/386,403 filed on Sep. 24, 2010, the content of which is incorporated herein by ...

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Номер записи: 83
19-03-2020 дата публикации

INTEGRATED DEVICE WITH EXTERNAL LIGHT SOURCE FOR PROBING DETECTING AND ANALYZING MOLECULES

Номер: US20200088639A1
Автор: Cipriany Benjamin, Fife Keith G., Ghasemi Farshid, Gyarfas Brett J., Kabiri Ali, Lackey Jeremy, Rothberg Jonathan M., Schmid Gerard, Sickler Jason W., West Lawrence C.
Принадлежит: Quantum-Si incorporated

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of a temporal parameter associated with the marker labeling the sample. 1. An integrated device , comprising:a sample well arranged on a substrate and configured to receive a sample;a waveguide configured to propagate a plurality of pulses of optical excitation energy to the sample well; andat least one sensor, positioned to receive light from the sample well, the at least one sensor configured to obtain a lifetime measurement and a spectral measurement for received photons of luminescence emitted by the sample.2. The integrated device of claim 1 , wherein the at least one sensor comprises a first photosensitive region and a second photosensitive region claim 1 , the first and second photosensitive regions respectively configured to detect a first wavelength range and a second wavelength range.3. The integrated device of claim 2 , wherein the at least one sensor is configured to aggregate claim 2 , into a first plurality of time bins claim 2 , charge carriers generated by photons ...

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Номер записи: 84
07-04-2016 дата публикации

ION-SENSING CHARGE-ACCUMULATION CIRCUITS AND METHODS

Номер: US20160097736A1
Автор: Fife Keith G.
Принадлежит:

An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as a function of the accumulated plurality of charge packets, the output signal representing the ion concentration of the solution. The charge accumulation device can include a first charge control electrode above a first electrode semiconductor region, an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface, a second charge control electrode above a second electrode semiconductor region, and a drain diffusion region. The first control electrode can control entry of charge into a gate semiconductor region in response to a first control signal. The ion-sensitive passivation surface can be configured to receive the fluid. The second charge control electrode can control transmission of the plurality of charge packets out of the gate semiconductor region and into the drain diffusion region in response to a second control signal. The drain diffusion region can receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region. 1 a first charge control electrode, above a first electrode semiconductor region, to control entry of charge into a gate semiconductor region in response to a first control signal applied to the first electrode; and', 'an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface configured to receive the fluid;', 'a second charge control electrode, above a second electrode semiconductor region, to control transmission of the plurality of charge packets out of the gate semiconductor region and into a drain diffusion region in response to a second control signal applied to the second electrode; and', 'a drain diffusion region to receive the ...

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Номер записи: 85
02-06-2022 дата публикации

ULTRASOUND RECEIVER CIRCUITRY AND RELATED APPARATUS AND METHODS

Номер: US20220171041A1
Автор: Casper Andrew J., Chen Kailiang, Fife Keith G., Ralston Tyler S., Sanchez Nevada J.
Принадлежит: BFLY Operations, Inc.

Methods and apparatus are described for implementing a coding scheme on ultrasound signals received by a plurality of ultrasonic transducers. The coding, and subsequent decoding, may allow for multiple ultrasonic transducers to be operated in a receive mode simultaneously while still differentiating the contribution of the individual ultrasonic transducers. Improved signal characteristics may result, including improved signal-to-noise ratio (SNR). 12-. (canceled)3. An ultrasound device , comprising:a plurality of ultrasonic transducers;an analog encoding circuit coupled to outputs of the plurality of ultrasonic transducers and configured to apply a Hadamard code to a plurality of output signals from the plurality of ultrasonic transducers;an analog-to-digital converter (ADC) coupled to an output of the analog encoding circuit; anda digital decoding circuit coupled to an output of the ADC.4. The ultrasound device of claim 3 , wherein the analog encoding circuit is operable to encode a positive signal during a first acquisition window and a negative signal during a second acquisition window.5. The ultrasound device of claim 3 , wherein the analog encoding circuit is further configured to:generate a first encoded signal representative of a sum between a first output signal of a first ultrasonic transducer of the plurality of ultrasonic transducers and a second output signal of a second ultrasonic transducer of the plurality of ultrasonic transducers during a first acquisition window, andgenerate a second encoded signal representative of a difference between the first output signal and the second output signal during a second acquisition window.6. The ultrasound device of claim 3 , wherein the analog encoding circuit comprises:an analog averaging circuit configured to output an analog averaged signal representing an average of the plurality of output signals from the plurality of ultrasonic transducers.7. The ultrasound device of claim 6 , wherein the analog encoding ...

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Номер записи: 86
02-04-2020 дата публикации

FABRICATION TECHNIQUES AND STRUCTURES FOR GETTERING MATERIALS IN ULTRASONIC TRANSDUCER CAVITIES

Номер: US20200102214A1
Автор: Fife Keith G., Liu Jianwei, Lutsky Joseph, Miao Lingyun
Принадлежит: Butterfly Network, Inc.

A method of forming an ultrasound transducer device includes bonding a membrane to a substrate so as to form a sealed cavity between the membrane and the substrate. An exposed surface located within the sealed cavity includes a getter material that is electrically isolated from a bottom electrode of the cavity. 1. A method of forming an ultrasound transducer device , the method comprising:bonding a membrane to a substrate so as to form a sealed cavity therebetween;wherein an exposed surface located within the sealed cavity comprises a getter material, the getter material being electrically isolated from a bottom electrode of the cavity.21. The method of , wherein the exposed surface comprises a top surface of the substrate.3. The method of claim 1 , wherein the getter material comprises a same material as a bottom electrode of the cavity.4. The method of claim 1 , wherein the getter material comprises one or more of:titanium, zirconium, vanadium, cobalt, nickel, and alloys thereof.5. The method of claim 4 , further comprising removing one or more insulating layers from the getter material.6. The method of claim 5 , wherein the getter material is disposed at an outer perimeter of the cavity.7. The method of claim 5 , wherein the cavity is circular shaped and the getter material is disposed at an outer radius of the cavity.8. The method of claim 1 , wherein the getter material is configured to remove one or more of oxygen claim 1 , nitrogen claim 1 , argon claim 1 , or water vapor from the cavity.9. An ultrasound transducer device claim 1 , comprising:a membrane bonded to a substrate with a sealed cavity therebetween;wherein an exposed surface located within the sealed cavity comprises a getter material, the getter material being electrically isolated from a bottom electrode of the cavity.10. The device of claim 9 , wherein the exposed surface comprises a top surface of the substrate.11. The device of claim 9 , wherein the getter material comprises one or more of: ...

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Номер записи: 87
10-07-2014 дата публикации

CHEMICALLY SENSITIVE SENSOR WITH LIGHTLY DOPED DRAINS

Номер: US20140193938A1
Автор: Fife Keith G.
Принадлежит: LIFE TECHNOLOGIES CORPORATION

A chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor. The lightly doped region extends beneath and adjacent to a gate region of the chemical sensitive sensor. Modifying the gain of the chemically sensitive sensor is achieved by manipulating the lightly doped region under the electrodes. 1. A method of making a chemically sensitive sensor , comprising:forming a substrate with a first conductivity type of dopant;building an epitaxial layer using the same conductivity type dopant used to form the substrate, but made less dense than the dopant on the substrate;forming an electrode layer on the epitaxial layer formed from a different, second conductivity type of dopant than the first conductivity type of dopant used to form the substrate, wherein the density of dopant on both the electrode layer and the substrate are similar;masking and etching the electrode layer to produce gates and electrodes;creating a first lightly doped region adjacent to one of the electrodes using a multidirectional implant technique, wherein the first lightly doped region is formed from a dopant of a conductivity type opposite the epitaxial layer dopant;producing diffusion nodes that are self-aligned with the electrodes next to the gates, a first of said diffusion nodes contiguous with the first lightly doped region, from a dopant of a conductivity type similar to the gates, electrodes, and lightly doped region; andforming a floating gate electrode, electrodes above the diffusion area, and contacts for electrodes by alternating layers of insulation, dielectric, conductive and metal layers.2. The method of claim 1 , further comprising:creating a second lightly doped region adjacent to one of the electrodes using a multidirectional implant technique, wherein the second lightly doped region is formed from a dopant of a conductivity type opposite the epitaxial layer dopant.320. The method of ...

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Номер записи: 88
09-06-2022 дата публикации

MULTILEVEL BIPOLAR PULSER

Номер: US20220179058A1
Автор: Chen Kailiang, Fife Keith G., Ralston Tyler S.
Принадлежит: BFLY Operations, Inc.

Circuitry for ultrasound devices is described. A multilevel pulser is described, which can provide bipolar pulses of multiple levels. The multilevel pulser includes a pulsing circuit and pulser and feedback circuit. Symmetric switches are also described. The symmetric switches can be positioned as inputs to ultrasound receiving circuitry to block signals from the receiving circuitry. 1. An apparatus , comprising:a plurality of ultrasonic transducers configured to transmit ultrasound signals and receive reflections of the ultrasound signals; the integrated circuit comprises a plurality of multi-level pulsers and a plurality of feedback circuits;', 'each feedback circuit of the plurality of feedback circuits is configured to provide a respective control signal of a plurality of control signals to a respective multi-level pulser of the plurality of multi-level pulsers to control the respective multi-level pulser to generate a respective input signal of a plurality of input signals, the respective input signal comprising at least three voltage levels; and', 'each multi-level pulser of the plurality of multi-level pulsers is configured to provide the respective input signal to a respective ultrasonic transducer of the plurality of ultrasonic transducers., 'a complementary metal oxide semiconductor (CMOS) die having the plurality of ultrasonic transducers and an integrated circuit formed thereon, wherein2. The apparatus of claim 1 , wherein the plurality of feedback circuits are configured to spatially apodize the plurality of input signals provided to the plurality of ultrasonic transducers by controlling the plurality of multi-level pulsers.3. The apparatus of claim 1 , wherein:the respective multi-level pulser comprises an input terminal and an output terminal;each respective feedback circuit of the plurality of feedback circuits comprises an input terminal and an output terminal;the input terminal of the respective multi-level pulser is coupled to the output terminal ...

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Номер записи: 89
13-05-2021 дата публикации

Chemical Sensor Array Having Multiple Sensors Per Well

Номер: US20210140918A1
Автор: Bustillo James, Fife Keith G., OWENS Jordan, Rothberg Jonathan M.
Принадлежит: LIFE TECHNOLOGIES CORPORATION

In one embodiment, a device is described. The device includes a material defining a reaction region. The device also includes a plurality of chemically-sensitive field effect transistors have a common floating gate in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region. 1. A method for manufacturing a semiconductor device , the method comprising:forming a material defining a reaction region;forming a plurality of chemically-sensitive field effect transistors having a common floating gate in communication with the reaction region; andforming a circuit to obtain individual output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region.2. The method of claim 1 , wherein forming the plurality of chemically-sensitive field effect transistors comprises:forming respective floating gate structures for the chemically-sensitive field effect transistors; andforming a conductive element to electrically couple the respective floating gate structures to one another.3. The method of claim 2 , wherein the respective floating gate structures include a plurality of conductors electrically coupled to one another and separated by dielectric layers claim 2 , and the conductive element is an uppermost conductor in the plurality of conductors of the respective floating gate structures.4. The method of claim 1 , wherein a width of an uppermost conductive element of the common floating gate is less than a width of a bottom surface of the reaction region.5. The method of claim 1 , wherein a bottom surface of the reaction region includes an upper surface of a conductive element of the common floating gate.6. The method of claim 5 , wherein the conductive element comprises an electrically conductive material claim 5 , and the upper surface of the conductive element includes an ...

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Номер записи: 90
03-05-2018 дата публикации

Integrated device with external light source for probing detecting and analyzing molecules

Номер: US20180120229A1
Автор: Ali Kabiri, Benjamin CIPRIANY, Brett J. Gyarfas, Farshid Ghasemi, Gerard Schmid, Jason W. Sickler, Jeremy Lackey, Jonathan M. Rothberg, Keith G. Fife, Lawrence C. West
Принадлежит: Quantum Si Inc

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of a temporal parameter associated with the marker labeling the sample.

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Номер записи: 91
01-09-2022 дата публикации

SENSOR AND DEVICE FOR LIFETIME IMAGING AND DETECTION APPLICATIONS

Номер: US20220273174A1
Автор: BOISVERT DAVID, Fife Keith G., Rothberg Jonathan M.
Принадлежит: Tesseract Health, Inc.

A method of luminance lifetime imaging includes receiving incident photons at an integrated photodetector from luminescent molecules. The incident photons being received through one or more optical components of a point-of-care device. The method also includes detecting arrival times of the incident photons using the integrated photodetector. A method of analyzing blood glucose includes detecting luminance lifetime characteristics of tissue using, at least in part, an integrated circuit that detects arrival times of incident photons from the tissue. The method also includes analyzing blood glucose based upon the luminance lifetime characteristics. 1. An eye imaging and/or measuring device comprising: ["a photodetection region configured to, in response to receiving incident photons from and/or reflected by a subject's eye, generate charge carriers;", 'a charge carrier storage region electrically coupled to the photodetection region by a charge carrier travel region;', receive, from a control circuit, a first signal;', 'establish, in response to receiving the first signal, in the charge carrier travel region, an electric potential allowing the charge carriers to travel, in the charge carrier travel region, from the photodetection region toward the charge carrier storage region;', 'receive, from the control circuit, a second signal; and', 'produce, in response to receiving the second signal, in the charge carrier travel region, a potential barrier; and, 'a first electrode configured to, receive, from the control circuit, a third signal;', 'produce, in response to receiving the third signal, a potential barrier, wherein the first and second electrodes are positioned such that, when the first electrode receives the second signal and the second electrode receives the third signal, the potential barriers confine at least some of the charge carriers between the first and second electrodes., 'a second electrode configured to], 'an integrated photodetector comprising2. The ...

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Номер записи: 92
12-05-2016 дата публикации

INTEGRATED DEVICE FOR TEMPORAL BINNING OF RECEIVED PHOTONS

Номер: US20160133668A1
Автор: BOISVERT DAVID, Fife Keith G., Rothberg Jonathan M.
Принадлежит: Quantum-Si incorporated

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced. 1. An integrated circuit , comprising:a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons;at least one charge carrier storage region; anda charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.2. The integrated circuit of claim 1 , wherein the at least one charge carrier storage region comprises a plurality of charge carrier storage regions claim 1 , and wherein the charge carrier segregation structure is configured to direct charge carriers into respective charge carrier storage regions of the plurality of charge carrier storage regions.3. The integrated circuit of claim 2 , wherein the charge carrier segregation structure is configured to direct the charge carriers into the respective charge carrier storage regions based upon times at which the charge carriers arrive at charge carrier capture regions of the charge carrier segregation structure.4. The integrated circuit of claim 1 , wherein the charge carrier segregation structure comprises:a charge carrier travel region configured to receive the plurality of charge carriers from the photodetection region, the charge carrier travel region comprising a ...

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Номер записи: 93
10-05-2018 дата публикации

CHEMICAL SENSOR WITH CONSISTENT SENSOR SURFACE AREAS

Номер: US20180128773A1
Автор: Bustillo James, Fife Keith G., LI Shifeng, OWENS Jordan
Принадлежит:

A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening. 1. A method for manufacturing a chemical sensor , the method comprising:forming a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface;forming a material defining an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric; andforming a conductive element contacting the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening, wherein forming the material and forming the conductive element include:forming the first dielectric on the floating gate conductor, the first dielectric defining a cavity extending to the upper surface of the floating gate conductor;depositing the second dielectric thereon;etching the second dielectric to expose the upper surface of the floating gate conductor, thereby defining an opening; andforming the conductive element within the opening.2. The method of claim 1 , wherein forming the conductive element within the opening comprises:depositing a conductive material within the opening and on an upper surface of the first dielectric; andremoving at least a portion of the conductive material from the upper surface of the second dielectric.3. The method of claim 2 , wherein removing at least the portion of the conductive material comprises:depositing a layer of photoresist within the opening and; andremoving at least a portion of the conductive material together with the photoresist from the upper ...

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Номер записи: 94
27-05-2021 дата публикации

DIFFERENTIAL ULTRASONIC TRANSDUCER ELEMENT FOR ULTRASOUND DEVICES

Номер: US20210160621A1
Автор: Chen Kailiang, Fife Keith G., Lutsky Joseph, Ralston Tyler S., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Aspects of the technology described herein relate to ultrasound circuits that employ a differential ultrasonic transducer element, such as a differential micromachined ultrasonic transducer (MUT) element. The differential ultrasonic transducer element may be coupled to an integrated circuit that is configured to operate the differential ultrasonic transducer element in one or more modes of operation, such as a differential receive mode, a differential transmit mode, a single-ended receive mode, and a single-ended transmit mode. 1. An ultrasound device , comprising: a differential receive mode;', 'a differential transmit mode;', 'a single-ended receive mode; and', 'a single-ended transmit mode; and, 'a differential capacitive micromachined ultrasonic transducer (CMUT) element operable in each mode of the group comprising select a first mode from the group; and', 'operate the differential CMUT element in the first mode., 'an integrated circuit coupled to the differential CMUT element and configured to2. The ultrasound device of claim 1 , wherein the integrated circuit is configured to operate the differential CMUT element in the differential receive mode and the differential transmit mode.3. The ultrasound device of claim 1 , wherein the differential CMUT element is integrated into an ultrasonic transducer array and wherein the integrated circuit and the ultrasonic transducer array are formed on a single semiconductor die.4. The ultrasound device of claim 1 , wherein:the differential CMUT element comprises a first CMUT that is configured to be biased with a first bias voltage and a second CMUT that is configured to be biased with a second bias voltage.5. The ultrasound device of claim 4 , wherein the integrated circuit is configured claim 4 , when operating the differential CMUT element in the differential transmit mode claim 4 , to:cause the first bias voltage and the second bias voltage to have opposite polarities; anddrive the first CMUT and the second CMUT with ...

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Номер записи: 95
10-05-2018 дата публикации

ULTRASONIC TRANSDUCERS IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) WAFERS AND RELATED APPARATUS AND METHODS

Номер: US20180130795A1
Автор: Alie Susan A., Fife Keith G., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer. 1. (canceled)2. An ultrasound device , comprising:an integrated circuit having a transistor gate layer formed over a substrate;a plurality of metallization layers disposed above the transistor gate layer; and a bottom electrode formed above a first of the plurality of metallization layers;', 'a cavity disposed above the bottom electrode, the cavity representing a partial void of a second of the plurality of metallization layers; and', 'a top electrode disposed above the cavity and formed below a third of the plurality of metallization layers., 'an ultrasonic transducer formed in the plurality of metallization layers above the transistor gate layer, the ultrasonic transducer further comprising3. The ultrasound device of claim 2 , wherein the bottom electrode and the top electrode comprise liner layers of the second of the plurality of metallization layers.4. The ultrasound device of claim 2 , wherein the bottom electrode comprises a first plurality of vias disposed between the first of the plurality of metallization layers and the cavity claim 2 , and the top electrode comprises a second plurality of vias disposed between the cavity and the third of the plurality of metallization layers.5. The ultrasound device of claim 2 , further comprising a fourth and a fifth of the plurality of metallization layers claim 2 , disposed between the first of the plurality of metallization layers and the transistor gate layer.6. The ultrasound device of claim 2 , wherein the integrated circuit is disposed directly beneath the ultrasonic transducer.7. The ultrasound device of claim 2 , wherein the third of the plurality of metallization ...

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Номер записи: 96
17-05-2018 дата публикации

Cmos ultrasonic transducers and related apparatus and methods

Номер: US20180133756A1
Автор: Gregory L. Charvat, Jonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston
Принадлежит: Butterfly Network Inc

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

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Номер записи: 97
02-05-2019 дата публикации

Chemically sensitive sensor with lightly doped drains

Номер: US20190131422A1
Автор: Keith G. Fife
Принадлежит: Life Technologies Corp

A chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor. The lightly doped region extends beneath and adjacent to a gate region of the chemical sensitive sensor. Modifying the gain of the chemically sensitive sensor is achieved by manipulating the lightly doped region under the electrodes.

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Номер записи: 98
07-08-2014 дата публикации

CMOS ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

Номер: US20140219062A1
Автор: Charvat Gregory L., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided. 1. An apparatus , comprising:a plurality of ultrasound sources comprising a first ultrasound source, a second ultrasound source, and a third ultrasound source, wherein at least one of the first ultrasound source, second ultrasound source, or third ultrasound source is a CMOS ultrasonic transducer (CUT) comprising a first wafer having a cavity formed therein and a membrane sealing the cavity;a first ultrasound sensor and a second ultrasound sensor; andprocessing circuitry coupled to the first ultrasound sensor and the second ultrasound sensor and configured to receive and discriminate between, for each of the first and second ultrasound sensors, respective source signals emitted by the first, second, and third ultrasound sources, wherein the first ultrasound source, second ultrasound source, and the first ultrasound sensor lie in a first plane, andwherein the second ultrasound source, the third ultrasound source, and the first ultrasound sensor lie in a second plane different than the first plane.2. The apparatus of claim 1 , wherein the CUT comprises a plurality of cavities formed in the first wafer and sealed by the membrane.3. The apparatus of claim 2 , wherein the CUT comprises a plurality of cavities formed in the first wafer claim 2 , at least two cavities of the plurality of cavities being sealed by respective membranes.4. The apparatus of claim 1 , wherein the first ultrasound sensor is a CUT comprising a first wafer having a plurality of cavities formed therein and a membrane sealing at least one of the cavities.5. The apparatus of claim 4 , wherein the first wafer of the CUT of the first ultrasound sensor comprises integrated circuitry forming at least ...

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Номер записи: 99
09-05-2019 дата публикации

HIGH DATA RATE INTEGRATED CIRCUIT WITH POWER MANAGEMENT

Номер: US20190136315A1
Автор: Fife Keith G., YANG Jungwook
Принадлежит:

A sensor device includes a sensor array and a flow cell in fluid communication with the sensor array. Bias circuitry apply bias arrangements to the sensor array to produce sensor data. Peripheral circuitry coupled to the bias circuitry produces streams of data from the sensor array, the peripheral circuitry having an active mode and an idle mode. Logic to switch the peripheral circuitry between the active mode and the idle mode to control power consumption is provided. A temperature sensor may be included, and the logic can operate with feedback to switch between the active mode and the idle mode to maintain the temperature within an operating range. 1. A method for operating a sequencing system including a sensor array , comprising:applying a sequence of alternating flows of reactant solutions during active intervals and flows of wash solutions during wash intervals;applying bias arrangements to the sensor array to produce sensor data;producing streams of sensor data from the sensor array using peripheral circuitry having an active mode and an idle mode; andswitching the peripheral circuitry between the active mode and the idle mode to control power consumption.2. The method of claim 1 , including using feedback responsive to temperature of the array to switch between the active mode and the idle mode to maintain the temperature within an operating range.3. The method of claim 1 , wherein the peripheral circuitry includes:converting, with conversion circuitry responsive to configuration parameters the sensor data into a plurality of streams of digital data;receiving, at a plurality of transmitters, corresponding streams of data from the plurality of streams from the conversion circuitry and transmitting the data to corresponding receivers; and 'applying a first set of one or more configuration parameters to the conversion circuitry in the active mode, and a second set of one or more configuration parameters to the conversion circuitry in the idle mode and ...

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Номер записи: 100
09-05-2019 дата публикации

TRANS-IMPEDANCE AMPLIFIER FOR ULTRASOUND DEVICE AND RELATED APPARATUS AND METHODS

Номер: US20190140603A1
Автор: Casper Andrew J., Chen Kailiang, Fife Keith G., Ralston Tyler S., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied. 1. An ultrasound apparatus , comprising:an ultrasound sensor; anda variable current trans-impedance amplifier (TIA) coupled to the ultrasound sensor and configured to receive and amplify an output signal from the ultrasound sensor, the variable current TIA being a multi-stage operational amplifier having a first stage and a last stage and including a first variable current source coupled to the first stage and a second variable current source coupled to the last stage;wherein the first stage is arranged to receive the output signal from the ultrasound sensor and the last stage is arranged to provide an output signal of the variable current TIA; andwherein the first variable current source comprises two or more current sources connected in parallel, and at least one of the two or more current sources is coupled to the first stage through a switch.2. The ultrasound apparatus of claim 1 , wherein the first and second variable current sources are independently controllable.3. The ultrasound apparatus of claim 1 , wherein the first and second variable current sources are digitally programmable.4. The ultrasound apparatus of claim 1 , further comprising a control circuit coupled to the first variable current source and the second variable current source and configured to control a first amount of current through the first variable current source and a second amount of current through the second variable current source.5. The ultrasound apparatus of claim 1 , wherein the ultrasound sensor and the variable current TIA are monolithically integrated on a semiconductor chip.6. The ...

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Номер записи: 101
16-05-2019 дата публикации

ULTRASOUND APPARATUSES AND METHODS FOR FABRICATING ULTRASOUND DEVICES

Номер: US20190142387A1
Автор: Alie Susan A., Chen Kailiang, Fife Keith G., Lutsky Joseph, Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Aspects of the technology described herein relate to an ultrasound device including a first die that includes an ultrasonic transducer, a first application-specific integrated circuit (ASIC) that is bonded to the first die and includes a pulser, and a second ASIC in communication with the second ASIC that includes integrated digital receive circuitry. In some embodiments, the first ASIC may be bonded to the second ASIC and the second ASIC may include analog processing circuitry and an analog-to-digital converter. In such embodiments, the second ASIC may include a through-silicon via (TSV) facilitating communication between the first ASIC and the second ASIC. In some embodiments, SERDES circuitry facilitates communication between the first ASIC and the second ASIC and the first ASIC includes analog processing circuitry and an analog-to-digital converter. In some embodiments, the technology node of the first ASIC is different from the technology node of the second ASIC. 1. An ultrasound device , comprising:a first die that comprises an ultrasonic transducer;a first application-specific integrated circuit (ASIC) that is bonded to the first die and comprises a pulser; anda second ASIC in communication with the first ASIC that comprises integrated digital receive circuitry.2. The ultrasound device of claim 1 , wherein the first ASIC is bonded to the second ASIC.3. The ultrasound device of claim 1 , wherein the second ASIC further comprises analog processing circuitry.4. The ultrasound device of claim 3 , wherein the analog processing circuitry comprises an analog amplifier claim 3 , an analog filter claim 3 , analog beamforming circuitry claim 3 , analog dechirp circuitry claim 3 , analog quadrature demodulation (AQDM) circuitry claim 3 , analog time delay circuitry claim 3 , analog phase shifter circuitry claim 3 , analog summing circuitry claim 3 , analog time gain compensation circuitry claim 3 , and/or analog averaging circuitry.5. The ultrasound device of claim 1 , ...

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Номер записи: 102
16-05-2019 дата публикации

ANALOG-TO-DIGITAL DRIVE CIRCUITRY HAVING BUILT-IN TIME GAIN COMPENSATION FUNCTIONALITY FOR ULTRASOUND APPLICATIONS

Номер: US20190142393A1
Автор: Chen Kailiang, Fife Keith G.
Принадлежит: Butterfly Network, Inc.

A time gain compensation (TGC) circuit for an ultrasound device includes a first amplifier having an integrating capacitor and a control circuit configured to generate a TGC control signal that controls an integration time of the integrating capacitor, thereby controlling a gain of the first amplifier. The integration time is an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier. 1. A method of controlling gain in a time gain compensation (TGC) circuit for an ultrasound device , the method comprising:generating, by a control circuit, a TCG control signal to control an integration time of a first integrating capacitor of a first amplifier of the TGC circuit, the integration time comprising an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier.2. The method of claim 1 , wherein the first amplifier comprises a differential amplifier.3. The method of claim 2 , wherein the differential amplifier comprises an analog-to-digital converter (ADC) driver.4. The method of claim 1 , further comprising generating the TGC control signal by comparing an output voltage of a second amplifier and a threshold voltage determined by a value of a variable gain control input signal claim 1 , the second amplifier configured as a comparator circuit and having a feedback capacitor.5. The method of claim 4 , wherein the second amplifier comprises an operational amplifier.6. The method of claim 1 , wherein the integration time controlled by the TGC control signal is dependent upon an RC time constant of the control circuit and a voltage of the variable gain control input signal.7. The method of claim 6 , wherein an output gain of the first amplifier is proportional to a ratio between resistance and capacitance values of the control circuit and resistance and capacitance values of the first amplifier.85. The method of claim 7 , wherein the ratio is ...

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Номер записи: 103
02-06-2016 дата публикации

CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT

Номер: US20160153930A1
Автор: Bustillo James, Fife Keith G., LI Shifeng, OWENS Jordan
Принадлежит:

In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element. 1. A chemical device , comprising:a chemically-sensitive field effect transistor including a floating gate structure comprising a plurality of floating gate conductors electrically coupled to one another;a conductive element overlying and in communication with an uppermost floating gate conductor in the plurality of floating gate conductors, the conductive element wider and thinner than the uppermost floating gate conductor; anda dielectric material defining an opening extending to an upper surface of the conductive element.2. The chemical device of claim 1 , wherein the conductive element comprises at least one of titanium claim 1 , tantalum claim 1 , titanium nitrite claim 1 , and aluminum claim 1 , and/or oxides and/or mixtures thereof.3. The chemical device of claim 1 , wherein the distance between adjacent conductive elements in the chemical device is about 0.18 microns.4. The chemical device of claim 1 , wherein the thickness of the conductive element is about 0.1-0.2 microns.5. The chemical device of claim 1 , wherein the uppermost floating gate conductor in the plurality of floating gate conductors has a thickness greater than a thickness of other floating gate conductors in the plurality of floating gate conductors.6. The chemical device of claim 1 , wherein the conductive element comprises a material different from a material comprising the uppermost floating gate conductor.7. The chemical device ...

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Номер записи: 104
14-05-2020 дата публикации

GETTER TECHNOLOGY FOR MICROMACHINED ULTRASONIC TRANSDUCER CAVITIES

Номер: US20200147641A1
Автор: Fife Keith G., Liu Jianwei, Miao Lingyun, Rothberg Jonathan M.
Принадлежит: Butterfly Network, Inc.

A method of forming an ultrasonic transducer device includes bonding a membrane to seal a transducer cavity with at least a portion of a getter material layer being exposed, the getter material layer comprising a portion of a bilayer stack compatible for use in damascene processing. 1. A method of forming an ultrasonic transducer device , the method comprising:bonding a membrane to seal a transducer cavity with at least a portion of a getter material layer being exposed, the getter material layer comprising a portion of a bilayer stack compatible for use in damascene processing.2. The method of claim 1 , wherein the bilayer stack comprises a diffusion barrier layer and the getter material layer formed on the diffusion barrier layer.3. The method of claim 2 , wherein the diffusion barrier layer comprises tantalum nitride (TaN) claim 2 , and the getter material layer comprises one of: tantalum (Ta) or titanium (Ti).4. The method of claim 1 , further comprising:patterning the bilayer stack and forming a metal layer on a first portion of the bilayer stack, wherein the exposed portion of the getter material layer corresponds to a second portion of the bilayer stack without the metal layer formed thereon.5. The method of claim 4 , further comprising exposing the exposed portion of the getter material layer by forming an opening through a bottom capping layer and a dielectric layer disposed over the second portion of the bilayer stack.6. A method of forming an ultrasonic transducer device claim 4 , the method comprising:forming a diffusion barrier layer over a substrate;forming a getter material layer over the diffusion barrier layer;forming a metal electrode layer over a first portion of the getter material layer;forming a transducer cavity over the metal electrode layer; andbonding a membrane to seal the transducer cavity with at least a second portion of the getter material layer being exposed.7. The method of claim 6 , wherein the diffusion barrier layer comprises ...

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Номер записи: 105
14-05-2020 дата публикации

TRANS-IMPEDANCE AMPLIFIER (TIA) FOR ULTRASOUND DEVICES

Номер: US20200150252A1
Автор: Chen Chao, Chen Kailiang, Fife Keith G.
Принадлежит: Butterfly Network, Inc.

A variable-current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied. The variable-current trans-impedance amplifier may include multiple stages, including a first stage having N-P transistor pairs configured to receive an input signal and produce a single-ended amplified signal. 1. An ultrasound apparatus , comprising:a variable-current trans-impedance amplifier (TIA) configured to receive and amplify an output signal from an ultrasound sensor, the variable-current TIA comprising a variable current source and a differential input stage comprising two pairs of N-P transistors.2. The ultrasound apparatus of claim 1 , wherein the variable-current TIA is a two-stage operational amplifier having a first stage and a second stage claim 1 , wherein the first stage comprises the differential input stage claim 1 , and wherein the variable current source includes a first variable current source coupled to the first stage and a second variable current source coupled to the second stage.3. The ultrasound apparatus of claim 2 , wherein the first and second variable current sources are independently controllable.4. The ultrasound apparatus of claim 2 , wherein the first and second variable current sources are digitally programmable.5. The ultrasound apparatus of claim 2 , wherein the first stage is arranged to receive the output signal from the ultrasound sensor claim 2 , and the second stage is arranged to provide an output signal of the variable current TIA.6. The ultrasound apparatus of claim 2 , wherein the variable-current TIA further comprises a variable feedback RC circuit coupled between an output terminal of the variable-current TIA and a node ...

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Номер записи: 106
30-05-2019 дата публикации

MICROFABRICATED ULTRASONIC TRANSDUCER HAVING INDIVIDUAL CELLS WITH ELECTRICALLY ISOLATED ELECTRODE SECTIONS

Номер: US20190160490A1
Автор: Alie Susan A., Fife Keith G., Grosjean David, Lutsky Joseph
Принадлежит: Butterfly Network, Inc.

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another. 1. An apparatus , comprising: portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another; and', 'each portion of the bottom electrode corresponding to each individual transducer cell further comprising a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another;, 'an ultrasonic transducer substrate having a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell, whereinfirst trench isolation regions disposed within the bottom electrode and configured to electrically isolate each individual transducer cell from one another; andsecond trench isolation regions disposed within the bottom electrode and configured to electrically isolate the first and second bottom electrode portions of an individual transducer cell from one another.2. The apparatus of claim 1 , wherein the first and second bottom electrode portions of an individual transducer cell are separately electrically addressable from one another.3. The apparatus of claim 1 , wherein the first bottom electrode comprises an inner bottom electrode with respect to a diameter of the transducer cell claim 1 , ...

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Номер записи: 107
21-05-2020 дата публикации

ANTI-STICTION BOTTOM CAVITY SURFACE FOR MICROMACHINED ULTRASONIC TRANSDUCER DEVICES

Номер: US20200156110A1
Автор: Fife Keith G., Liu Jianwei, Miao Lingyun, Rothberg Jonathan M.
Принадлежит: Butterfly Network, Inc.

A method of forming an ultrasonic transducer device includes forming an insulating layer having topographic features over a lower transducer electrode layer of a substrate; forming a conformal, anti-stiction layer over the insulating layer such that the conformal layer also has the topographic features; defining a cavity in a support layer formed over the anti-stiction layer; and bonding a membrane to the support layer. 1. A method of forming an ultrasonic transducer device , the method comprising:forming an insulating layer having topographic features over a lower transducer electrode layer of a substrate;forming a conformal, anti-stiction layer over the insulating layer such that the conformal layer also has the topographic features;defining a cavity in a support layer formed over the anti-stiction layer; andbonding a membrane to the support layer.2. The method of claim 1 , further comprising forming the topographic features claim 1 , the topographic features corresponding to a region of contact between the conformal claim 1 , anti-stiction layer and the membrane in a collapse mode of transducer operation.3. The method of claim 1 , wherein forming the insulating layer having topographic features further comprises:forming a first type layer over the substrate and a second type sacrificial layer over the first type layer;lithographically patterning and removing portions of the second type sacrificial layer;forming a third type layer over the patterned second type sacrificial layer and first type layer;planarizing the third type layer to a top surface of the patterned second type sacrificial layer; andremoving remaining portions of the patterned second type sacrificial layer.4. The method of claim 3 , wherein:{'sub': '2', 'the first type layer comprises SiO;'}the second type sacrificial layer comprises SiN; and{'sub': '2', 'the third type layer comprises SiO.'}5. The method of claim 3 , wherein the conformal claim 3 , anti-stiction layer comprises a thin film ...

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Номер записи: 108
21-05-2020 дата публикации

ION-SENSING CHARGE-ACCUMULATION CIRCUITS AND METHODS

Номер: US20200158684A1
Автор: Fife Keith G.
Принадлежит:

An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as a function of the accumulated plurality of charge packets, the output signal representing the ion concentration of the solution. The charge accumulation device can include a first charge control electrode above a first electrode semiconductor region, an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface, a second charge control electrode above a second electrode semiconductor region, and a drain diffusion region. The first control electrode can control entry of charge into a gate semiconductor region in response to a first control signal. The ion-sensitive passivation surface can be configured to receive the fluid. The second charge control electrode can control transmission of the plurality of charge packets out of the gate semiconductor region and into the drain diffusion region in response to a second control signal. The drain diffusion region can receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region. 1. A method of using an ion-sensing integrated circuit device , comprising:controlling entry of charge into a gate semiconductor region by applying a control signal to a first charge control electrode to form a charge packet in a gate semiconductor region below an electrically floating gate structure;controlling transmission of the charge packet out of the gate semiconductor region and into a drain diffusion region by applying a control signal to a second charge control electrode;accumulating a plurality of charge packets at the drain diffusion region as a function of a surface potential at an analyte solution/passivation layer interface that is above the electrically floating gate; andgenerating ...

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Номер записи: 109
30-05-2019 дата публикации

ULTRASONIC TRANSDUCERS IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) WAFERS AND RELATED APPARATUS AND METHODS

Номер: US20190164956A1
Автор: Alie Susan A., Fife Keith G., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer. 1. An ultrasound device , comprising: an integrated circuit having a transistor gate layer;', 'a plurality of metallization layers disposed above the transistor gate layer; and', a bottom electrode formed above a first of the plurality of metallization layers;', 'a cavity disposed above the bottom electrode; and', 'a top electrode disposed above the cavity and formed below a second of the plurality of metallization layers;, 'an ultrasonic transducer formed in the plurality of metallization layers above the transistor gate layer, the ultrasonic transducer comprising, 'wherein the bottom electrode comprises a first plurality of vias disposed between the first of the plurality of metallization layers and the cavity, and the top electrode comprises a second plurality of vias disposed between the cavity and the second of the plurality of metallization layers., 'a complementary metal oxide semiconductor (CMOS) wafer comprising2. The ultrasound device of claim 1 , wherein the first plurality of vias are spaced relative to each other by between approximately 0.1 microns and approximately 0.5 microns.3. The ultrasound device of claim 1 , wherein the first plurality of vias are spaced relative to each other by between approximately 0.2 microns and approximately 0.3 microns.4. The ultrasound device of claim 1 , wherein the second plurality of vias are spaced relative to each other by between approximately 0.1 microns and approximately 0.5 microns.5. The ultrasound device of claim 1 , wherein the second plurality of vias are spaced relative to each other by between approximately 0.2 microns and approximately 0.3 microns.6. The ...

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Номер записи: 110
23-06-2016 дата публикации

HIGH DATA RATE INTEGRATED CIRCUIT WITH POWER MANAGEMENT

Номер: US20160177385A1
Автор: Fife Keith G., YANG Jungwook
Принадлежит:

A sensor device includes a sensor array and a flow cell in fluid communication with the sensor array. Bias circuitry apply bias arrangements to the sensor array to produce sensor data. Peripheral circuitry coupled to the bias circuitry produces streams of data from the sensor array, the peripheral circuitry having an active mode and an idle mode. Logic to switch the peripheral circuitry between the active mode and the idle mode to control power consumption is provided. A temperature sensor may be included, and the logic can operate with feedback to switch between the active mode and the idle mode to maintain the temperature within an operating range. 114.-. (canceled)15. A sensor device , comprising:a data source comprising an analog sensor array on a substrate;peripheral circuitry coupled to the sensor array to produce a plurality of streams of digital data;a plurality of transmitters on the substrate configured to receive corresponding streams of data from the data source in parallel;a temperature sensor configured to sense a temperature that correlates with the temperature of the sensor array;a sequencer which operates the data source, the peripheral circuitry and the plurality of transmitters to sample frames of data at a frame rate according an active mode and an idle mode, wherein the sequencer operates in the active mode for a first number of frames in a time interval overlapping with a flow of reactant solution and in the idle mode for a second number of frames in a time interval overlapping with an immediately following flow of wash solution; anda controller coupled with the temperature sensor and the sequencer to adjust the first and second numbers in response to the sensed temperature.16. The sensor device of claim 15 , wherein the analog sensor array comprises an array of chemically sensitive field effect transistors.17. The sensor device of claim 15 , wherein the plurality of transmitters includes at least 20 transmitters for transmitting at a data rate ...

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Номер записи: 111
23-06-2016 дата публикации

HIGH DATA RATE INTEGRATED CIRCUIT WITH TRANSMITTER CONFIGURATION

Номер: US20160178566A1
Автор: Fife Keith G., YANG Jungwook
Принадлежит:

A high data rate integrated circuit, such as an integrated circuit including a large sensor array, may be implemented using clock multipliers in individual power domains, coupled to sets of transmitters, including a transmitter pair configuration. Reference clock distribution circuitry on the integrated circuit distributes a relatively low speed reference clock. In a transmitter pair configuration, each pair comprises a first transmitter and a second transmitter in a transmitter power domain. Also, each pair of transmitters includes a clock multiplier connected to the reference clock distribution circuitry, and disposed between the first and second transmitters, which produces a local transmit clock. 1. A device , comprising:a substrate;a data source on the substrate;a plurality of transmitters disposed in pairs on the substrate, the transmitters configured to receive corresponding streams of data from the data source, and to transmit the corresponding streams of data on respective output pads in accordance with a corresponding local transmit clock;reference clock distribution circuitry on the substrate for distributing a reference clock having a reference frequency; anda plurality of clock multipliers on the substrate, clock multipliers in the plurality connected to the reference clock distribution circuitry to receive the reference clock, and coupled to respective pairs of transmitters to provide the corresponding local transmit clocks having transmit clock frequencies that are multiples of the reference clock frequency.2. The device of claim 1 , wherein the plurality of transmitters includes at least 20 transmitters capable of transmission at data rate greater than 1 Gb per second claim 1 , and configured in at least 10 pairs.3. The device of claim 1 , wherein the transmitters disposed in pairs have respective output pads disposed on the substrate in a group so that no other output pads for other transmitters in other pairs of transmitters are between them.4. The ...

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Номер записи: 112
23-06-2016 дата публикации

METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS

Номер: US20160178570A1
Автор: Fife Keith G.
Принадлежит:

A semiconductor device, comprising a first field effect transistor (FET) connected in series to a second FET, and a third FET connected in series to the first FET and the second FET. The semiconductor device further includes bias circuitry coupled to the first FET and the second FET, and an output conductor coupled to a terminal of the second FET, wherein the output conductor obtains an output signal from the second FET that is independent of the first FET. 1. A semiconductor device , comprising:a first field effect transistor (FET) connected in series to a second FET;a third FET connected in series to the first FET and the second FET;bias circuitry coupled to the first FET and the second FET; andan output conductor coupled to a terminal of the second FET, wherein the output conductor obtains an output signal from the second FET that is independent of the first FET.2. The device of claim 1 , wherein the third FET concurrently couples the first FET and the second FET to the output conductor in response to a select signal.3. The device of claim 1 , wherein the output signal from the second FET is independent of a voltage on a terminal of the first FET.4. The device of claim 1 , wherein the second FET comprises a source follower.5. The device of claim 1 , wherein the bias circuitry comprises at least one voltage source and at least one current sink.6. The device of claim 1 , wherein the bias circuitry applies a voltage source to the first FET and applies a current sink to the second FET.7. The device of claim 1 , wherein the output signal is dependent on the threshold voltage of the second FET.8. The device of claim 1 , wherein the first FET is operating under drain induced barrier lowering constraints when the output signal is obtained from the second FET.9. The device of claim 1 , wherein the first FET is operating under punch through mode constraints when the output signal is obtained from the second FET.10. The device of claim 1 , wherein the third FET is biased in ...

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Номер записи: 113
18-09-2014 дата публикации

CHEMICAL SENSOR WITH PROTRUDED SENSOR SURFACE

Номер: US20140264322A1
Автор: Bustillo James, Fife Keith G., LI Shifeng, OWENS Jordan
Принадлежит: LIFE TECHNOLOGIES CORPORATION

In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A conductive element protrudes from the upper surface of the floating gate conductor into an opening. A dielectric material defines a reaction region. The reaction region overlies and extends below an upper surface of the conductive element. 1. A chemical sensor , comprising:a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface;a conductive element protruding from the upper surface of the floating gate conductor;a dielectric material defining a reaction region, the reaction region overlying and extending below an upper surface of the conductive element.2. The chemical sensor of claim 1 , wherein the conductive element has a width less than a width of the reaction region.3. The chemical sensor of claim 1 , wherein the upper surface of the conductive element is below an upper surface of the dielectric material.4. The chemical sensor of claim 1 , wherein the dielectric material includes a first layer and a second layer on the first layer claim 1 , and the conductive element extends from the upper surface of the floating gate conductor a distance defined by a thickness of the first layer.5. The chemical sensor of claim 1 , wherein the conductive element comprises an electrically conductive material claim 1 , and an upper surface of the conductive element includes an oxide of the electrically conductive material.6. The chemical sensor of claim 1 , further comprising a layer of sensing material on the conductive element.7. The chemical sensor of claim 6 , wherein the sensing material comprises a metal-oxide.8. The chemical sensor of claim 6 , wherein the sensing material is sensitive to hydrogen ions.9. The chemical sensor of claim 1 , wherein the chemically-sensitive field effect transistor includes a floating gate structure ...

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Номер записи: 114
21-06-2018 дата публикации

OPTICAL COUPLER AND WAVEGUIDE SYSTEM

Номер: US20180172906A1
Автор: Beach James, Cipriany Benjamin, Fife Keith G., Ghasemi Farshid, Glenn Paul E., Gondarenko Alexander, Kabiri Ali, Preston Kyle, Rothberg Jonathan M., Schmid Gerard, Sickler Jason W., West Lawrence C.
Принадлежит: Quantum-Si incorporated

System and methods for optical power distribution to a large numbers of sample wells within an integrated device that can analyze single molecules and perform nucleic acid sequencing are described. The integrated device may include a grating coupler configured to receive an optical beam from an optical source and optical splitters configured to divide optical power of the grating coupler to waveguides of the integrated device positioned to couple with the sample wells. Outputs of the grating coupler may vary in one or more dimensions to account for an optical intensity profile of the optical source. 1. An integrated device comprising:a plurality of waveguides;a grating coupler having a grating region;a plurality of output waveguides having varying widths and configured to optically couple with the grating coupler; anda plurality of optical splitters, wherein at least one of optical splitters is positioned between one of the plurality of output waveguides and at least two of the plurality of waveguides.2. The integrated device of claim 1 , wherein the grating region comprises a plurality of gratings oriented substantially in a direction planar to a surface of the integrated device.3. The integrated device of claim 1 , wherein individual output waveguides of the plurality of output waveguides are arranged on a side of the grating region.4. The integrated device of claim 3 , wherein the plurality of output waveguides includes a first output waveguide and a second output waveguide claim 3 , and wherein the first output waveguide is more proximate to a center of the side of the grating region than the second output waveguide and has a smaller width than the second output waveguide.5. The integrated device of claim 3 , wherein the plurality of output waveguides includes a first output waveguide and a second output waveguide claim 3 , and wherein the first output waveguide is more proximate to an edge of the side of the grating region than the second output waveguide and ...

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Номер записи: 115
18-09-2014 дата публикации

Chemical sensor with sidewall spacer sensor surface

Номер: US20140264464A1
Автор: James Bustillo, Jordan Owens, Keith G. Fife
Принадлежит: Life Technologies Corp

In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.

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Номер записи: 116
18-09-2014 дата публикации

Chemical sensor with protruded sensor surface

Номер: US20140264466A1
Автор: James Bustillo, Jordan Owens, Keith G. Fife
Принадлежит: Life Technologies Corp

In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive element on a sidewall of the opening and extending over an upper surface of the dielectric material.

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Номер записи: 117
18-09-2014 дата публикации

CHEMICAL SENSOR WITH SIDEWALL SENSOR SURFACE

Номер: US20140264469A1
Автор: Bustillo James, Fife Keith G., LI Shifeng, OWENS Jordan
Принадлежит: LIFE TECHNOLOGIES CORPORATION

In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor. A material defines an opening overlying the floating gate conductor. The material comprises a conductive element having an inner surface defining a lower portion of a sidewall of the opening. A dielectric is on the conductive element and has an inner surface defining an upper portion of the sidewall. 1. A chemical sensor comprising:a chemically-sensitive field effect transistor including a floating gate conductor; anda material defining an opening overlying the floating gate conductor, the material comprising a conductive element having an inner surface defining a lower portion of a sidewall of the opening, and a dielectric on the conductive element and having an inner surface defining an upper portion of the sidewall.2. The chemical sensor of claim 1 , wherein the inner surface of the conductive element is substantially aligned with the inner surface of the dielectric.3. The chemical sensor of claim 1 , wherein the sidewall of the opening is an outer surface of a reaction region for the chemical sensor.4. The chemical sensor of claim 1 , wherein the conductive element contacts the floating gate conductor.5. The chemical sensor of claim 1 , wherein the conductive element extends across an upper surface of the floating gate conductor.6. The chemical sensor of claim 1 , wherein the conductive element comprises an electrically conductive material claim 1 , and the inner surface of the conductive element includes an oxide of the electrically conductive material.7. The chemical sensor of claim 1 , wherein a sensing surface of the chemical sensor includes the inner surface of the conductive element.8. The chemical sensor of claim 1 , wherein the chemically-sensitive field effect transistor generates a sensor signal in response to a chemical reaction occurring within the opening.9. The chemical sensor of claim 8 ...

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Номер записи: 118
18-09-2014 дата публикации

CHEMICAL SENSORS WITH CONSISTENT SENSOR SURFACE AREAS

Номер: US20140264470A1
Автор: Bustillo James, Fife Keith G., LI Shifeng, OWENS Jordan
Принадлежит: LIFE TECHNOLOGIES CORPORATION

In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor. The material comprises a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extends a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric. 1. A chemical sensor comprising:a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface;a material defining an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric; anda conductive element contacting the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric.2. The chemical sensor of claim 1 , wherein the opening includes a lower portion within the first dielectric claim 1 , and an upper portion within the second dielectric.3. The chemical sensor of claim 2 , wherein a width of the lower portion of the opening is less than a width of the upper portion claim 2 , such that the conductive element extends over an upper surface of the first dielectric.4. The chemical sensor of claim 2 , wherein the upper portion is defined by an inner surface of the second dielectric.5. The chemical sensor of claim 1 , wherein the conductive element extends to an upper surface of the first dielectric.6. The chemical sensor of claim 1 , wherein the conductive element includes an inner surface defining a lower portion of a reaction region for the chemical sensor claim 1 , and the second dielectric includes an inner surface defining an upper portion of the opening.7. The chemical sensor of claim 1 , ...

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Номер записи: 119
18-09-2014 дата публикации

CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT

Номер: US20140264471A1
Автор: Bustillo James, Fife Keith G., LI Shifeng, OWENS Jordan
Принадлежит: LIFE TECHNOLOGIES CORPORATION

In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element. 1. A chemical device , comprising:a chemically-sensitive field effect transistor including a floating gate structure comprising a plurality of floating gate conductors electrically coupled to one another;a conductive element overlying and in communication with an uppermost floating gate conductor in the plurality of floating gate conductors, the conductive element wider and thinner than the uppermost floating gate conductor; anda dielectric material defining an opening extending to an upper surface of the conductive element.2. The chemical device of claim 1 , wherein the conductive element comprises at least one of titanium claim 1 , tantalum claim 1 , titanium nitrite claim 1 , and aluminum claim 1 , and/or oxides and/or mixtures thereof.3. The chemical device of claim 1 , wherein the distance between adjacent conductive elements in the chemical device is about 0.18 microns.4. The chemical device of claim 1 , wherein the thickness of the conductive element is about 0.1-0.2 microns.5. The chemical device of claim 1 , wherein the uppermost floating gate conductor in the plurality of floating gate conductors has a thickness greater than a thickness of other floating gate conductors in the plurality of floating gate conductors.6. The chemical device of claim 1 , wherein the conductive element comprises a material different from a material comprising the uppermost floating gate conductor.7. The chemical device ...

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Номер записи: 120
18-09-2014 дата публикации

CHEMICAL SENSOR WITH CONSISTENT SENSOR SURFACE AREAS

Номер: US20140264472A1
Автор: Bustillo James, Fife Keith G., LI Shifeng, OWENS Jordan
Принадлежит: LIFE TECHNOLOGIES CORPORATION

In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening. 1. A chemical sensor comprising:a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface;a material defining an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric; anda conductive element contacting the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.2. The chemical sensor of claim 1 , wherein the opening includes a lower portion within the first dielectric claim 1 , and an upper portion within the second dielectric.3. The chemical sensor of claim 2 , wherein a width of the lower portion of the opening is substantially the same as a width of the upper portion.4. The chemical sensor of claim 2 , wherein the conductive element is conformal with a shape of the opening.5. The chemical sensor of claim 1 , wherein the conductive element extends to an upper surface of the second dielectric.6. The chemical sensor of claim 1 , wherein the conductive element includes an inner surface defining a lower portion of a reaction region for the chemical sensor claim 1 , and the second dielectric includes an inner surface defining an upper portion of the opening.7. The chemical sensor of claim 1 , wherein the conductive element comprises an electrically conductive material claim 1 , and an inner surface of the conductive element includes an oxide of the electrically conductive material.8. The chemical ...

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Номер записи: 121
18-09-2014 дата публикации

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME

Номер: US20140264660A1
Автор: Charvat Gregory L., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices. 1. An apparatus , comprising:an ultrasonic transducer; andan integrated circuit coupled to the ultrasonic transducer, the integrated circuit formed in a CMOS wafer, a cavity formed in the CMOS wafer;', 'a membrane formed of a material other than monocrystalline silicon overlying the cavity; and', 'an electrical contact providing electrical connectivity between the membrane and the integrated circuit., 'wherein the ultrasonic transducer comprises2. A method of forming an ultrasonic transducer , the method comprising:forming a cavity in a CMOS wafer;bonding a transfer wafer to the CMOS wafer, the transfer wafer having a front face formed of a material not including monocrystalline silicon,wherein bonding the transfer wafer to the CMOS wafer is performed below 450° C.3. An apparatus , comprising:a complementary metal oxide semiconductor (CMOS) wafer having an integrated circuit (IC) formed therein;a membrane disposed above a cavity in the CMOS wafer, the membrane being integrated with the CMOS wafer and having a first side proximate the cavity and a second side distal the cavity; anda conductive electrical path contacting the first side of the membrane proximate the cavity and electrically connecting the membrane to the IC.4. The apparatus of claim 3 , wherein the cavity is defined at least in part by a conductive sidewall formed of a conductive material claim 3 , and wherein the conductive electrical path comprises at least a portion of the conductive sidewall.5. The apparatus of claim 4 , wherein the conductive sidewall comprises a metal claim 4 , and wherein the first side ...

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Номер записи: 122
21-06-2018 дата публикации

COMPACT MODE-LOCKED LASER MODULE

Номер: US20180175582A1
Автор: Ahmad Faisal R., Camara Jose, Cipriany Benjamin, Fife Keith G., Ghasemi Farshid, Glenn John, Glenn Paul E., Jewell Jack, Jordan Jeremy Christopher, REARICK Todd, Rothberg Jonathan M., Schultz Jonathan C., Sickler Jason W., West Lawrence C.
Принадлежит:

Apparatus and methods for producing ultrashort optical pulses are described. A high-power, solid-state, passively mode-locked laser can be manufactured in a compact module that can be incorporated into a portable instrument. The mode-locked laser can produce sub-50-ps optical pulses at a repetition rates between 200 MHz and 50 MHz, rates suitable for massively parallel data-acquisition. The optical pulses can be used to generate a reference clock signal for synchronizing data-acquisition and signal-processing electronics of the portable instrument. 1. A mode-locked laser module comprising:a base chassis;a mode-locked laser having a laser cavity assembled on the base chassis; anda gain medium located in the laser cavity that exhibits a positive thermal lensing value between one diopter and 15 diopters when the mode-locked laser is producing optical pulses.2. The mode-locked laser module of claim 1 , further comprising a laser diode arranged to excite the gain medium with a pump beam claim 1 , wherein absorption of the pump beam in the gain medium causes the thermal lensing.3. The mode-locked laser module of claim 1 , wherein the gain medium comprises a solid state crystal that is disposed in a mount and has no active cooling.4. The mode-locked laser module of claim 2 , wherein the mode-locked laser produces optical pulses stably without mechanical adjustments to the laser cavity for thermal lensing values varied over a range from 8 diopters to 12 diopters due to changes in optical power of the pump beam.5. The mode-locked laser module of claim 2 , wherein the mode-locked laser produces optical pulses stably for thermal lensing values varied over a range from one diopter to 15 diopters due to changes in optical power of the pump beam.6. The mode-locked laser module of claim 5 , wherein the changes in the optical power of the pump beam are between 2 Watts and 10 Watts and an average output optical power from the mode-locked laser module is between 350 milliwatts and 3. ...

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Номер записи: 123
28-06-2018 дата публикации

INTEGRATED PHOTODETECTOR WITH DIRECT BINNING PIXEL

Номер: US20180180546A1
Автор: BOISVERT DAVID, Fife Keith G., Rothberg Jonathan M.
Принадлежит: Quantum-Si incorporated

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced. 1. An integrated circuit , comprising:a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons;at least one charge carrier storage region; anda charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.2. The integrated circuit of claim 1 , further comprising a direct binning pixel claim 1 , the direct binning pixel comprising the photodetection region claim 1 , the at least one charge carrier storage region and the charge carrier segregation structure.3. The integrated circuit of claim 2 , wherein the integrated circuit comprises a plurality of direct binning pixels.4. The integrated circuit of claim 1 , wherein the at least one charge carrier storage region comprises a plurality of charge carrier storage regions claim 1 , and the charge carrier segregation structure is configured to aggregate claim 1 , in the plurality of charge carrier storage regions claim 1 , charge carriers produced in a plurality of measurement periods.5. The integrated circuit of claim 1 , wherein the charge carrier segregation structure comprises at least one electrode at a boundary between the photodetection region and a ...

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Номер записи: 124
28-06-2018 дата публикации

CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT

Номер: US20180180572A1
Автор: Bustillo James, Fife Keith G., LI Shifeng, OWENS Jordan
Принадлежит:

In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element. 1. A chemical device , comprising:a chemically-sensitive field effect transistor including a floating gate structure comprising a plurality of floating gate conductors electrically coupled to one another;a conductive element overlying and in communication with an uppermost floating gate conductor in the plurality of floating gate conductors, the conductive element wider and thinner than the uppermost floating gate conductor; anda dielectric material defining an opening extending to an upper surface of the conductive element.2. The chemical device of claim 1 , wherein the conductive element comprises at least one of titanium claim 1 , tantalum claim 1 , titanium nitrite claim 1 , and aluminum claim 1 , and/or oxides and/or mixtures thereof.3. The chemical device of claim 1 , wherein the distance between adjacent conductive elements in the chemical device is about 0.18 microns.4. The chemical device of claim 1 , wherein the thickness of the conductive element is about 0.1-0.2 microns.5. The chemical device of claim 1 , wherein the uppermost floating gate conductor in the plurality of floating gate conductors has a thickness greater than a thickness of other floating gate conductors in the plurality of floating gate conductors.6. The chemical device of claim 1 , wherein the conductive element comprises a material different from a material comprising the uppermost floating gate conductor.7. The chemical device ...

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Номер записи: 125
18-09-2014 дата публикации

METHODS FOR MANUFACTURING CHEMICAL SENSORS WITH EXTENDED SENSOR SURFACES

Номер: US20140273324A1
Автор: Bustillo James, Fife Keith G., OWENS Jordan
Принадлежит: LIFE TECHNOLOGIES CORPORATION

In one implementation, a method for manufacturing a chemical sensor is described. The method includes forming a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material is formed defining an opening extending to the upper surface of the floating gate conductor. A conductive material is formed within the opening and on an upper surface of the dielectric material. A fill material is formed on the conductive material. The fill material is used as a protect mask to remove the conductive material on the upper surface of the dielectric material. The fill material is then removed to expose remaining conductive material on a sidewall of the opening. 1. A method for manufacturing a chemical sensor , the method comprising:forming a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface;forming a dielectric material defining an opening extending to the upper surface of the floating gate conductor;forming a conductive material within the opening and on an upper surface of the dielectric material;forming a fill material on the conductive material;using the fill material as a protective mask to remove the conductive material on the upper surface of the dielectric material; andremoving the fill material to expose remaining conductive material on a sidewall of the opening.2. The method of claim 1 , wherein using the fill material as a protect mask comprises performing a planarization process to expose the upper surface of the dielectric material.3. The method of claim 1 , wherein using the fill material as a protect mask comprises performing an etch process to expose the upper surface of the dielectric material.4. The method of claim 1 , wherein the remaining conductive material includes an inner surface defining a reaction region for the chemical sensor.5. The method of claim 1 , wherein removing the fill material leaves the remaining conductive material on the ...

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Номер записи: 126
05-07-2018 дата публикации

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME

Номер: US20180186628A1
Автор: Charvat Gregory L., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices. 1an integrated capacitive micromachined ultrasonic transducer (CMUT) comprising a sealed cavity bounded on one side by a membrane;an electrical connection plug contacting a bottom side of the membrane and electrically coupling to an integrated circuit formed across the cavity from the membrane.. An ultrasonic transducer device, comprising: This Application is a continuation of and claims the benefit under 35 U.S.C. § 120 of U.S. application Ser. No. 15/626,801, filed Jun. 19, 2017, under Attorney Docket No. B1348.70007US06 and entitled “COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME”, which is incorporated herein by reference in its entirety.Application Ser. No. 15/626,801 is a continuation of and claims the benefit under 35 U.S.C. § 120 of U.S. application Ser. No. 15/291,697, filed Oct. 12, 2016 under Attorney Docket No. B1348.70007US05 and entitled “COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME”, which is incorporated herein by reference in its entirety.Application Ser. No. 15/291,697 is a continuation of and claims the benefit under 35 U.S.C. § 120 of U.S. patent application Ser. No. 15/042,931, issued as U.S. Pat. No. 9,499,395, filed on Feb. 12, 2016 under Attorney Docket No. B1348.70007US04 and entitled “COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME”, which is incorporated herein by reference in its entirety.U.S. patent application Ser. No. 15/042,931 is a continuation of and claims the benefit under ...

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Номер записи: 127
14-07-2016 дата публикации

MONOLITHIC ULTRASONIC IMAGING DEVICES, SYSTEMS AND METHODS

Номер: US20160202349A1
Автор: Charvat Gregory L., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein. 1. An ultrasound device , comprising: a plurality of ultrasound elements including a first ultrasound element having at least one first capacitive micromachined ultrasonic transducer (CMUT) and a second ultrasound element having at least one second CMUT;', 'a first programmable waveform generator coupled to the first ultrasound element and configured to provide a first ultrasound waveform to the first CMUT, the first programmable waveform generator having one or more configurable operating parameters;', 'a second programmable waveform generator coupled to the second ultrasound element and configured to provide a second ultrasound waveform to the second CMUT, the second programmable waveform generator having one or more configurable operating parameters;', 'a controller configured to control values of a first configurable operating parameter of the first programmable waveform generator and a second configurable operating parameter of the second programmable waveform generator;', 'a first analog-to-digital converter (ADC) coupled to the first ultrasound element and configured to convert an analog signal provided by the first ultrasound element into a digital signal;', 'a second ADC coupled to the second ultrasound element and ...

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Номер записи: 128
11-06-2020 дата публикации

ULTRASOUND FINGERPRINT DETECTION AND RELATED APPARATUS AND METHODS

Номер: US20200184176A1
Автор: Fife Keith G., Liu Jianwei, Ralston Tyler S.
Принадлежит: Butterfly Network, Inc.

An ultrasound fingerprint sensor is described. The ultrasound fingerprint sensor may incorporate capacitive ultrasound sensing technology, for example in the form of an array of capacitive ultrasonic transducers. The ultrasound fingerprint sensor may be incorporated into various electronic equipment, such as mobile electronic equipment in the form of smartphones and tablet computers, as well as in biometric sensing equipment, such as fingerprint access terminals. 1. An ultrasound fingerprint sensing system , comprising:a housing;a display coupled to the housing such that the display and housing define an internal area; andan ultrasound-on-a-chip device disposed in the internal area between the display and housing and comprising an array of capacitive ultrasonic transducers integrated with an integrated circuit, the array of capacitive ultrasonic transducers configured to emit and detect ultrasound signals through the display.2. The ultrasound fingerprint sensing system of claim 1 , wherein the display is a touch-sensitive display.3. The ultrasound fingerprint sensing system of claim 1 , wherein the display comprises an organic light emitting diode (OLED) display layer and cover glass.4. The ultrasound fingerprint sensing system of claim 1 , wherein the housing is a hand-held housing.5. The ultrasound fingerprint sensing system of claim 1 , wherein the array of capacitive ultrasonic transducers is disposed in an engineered substrate and the integrated circuit is disposed in a circuit substrate bonded with the engineered substrate.6. The ultrasound fingerprint sensing system of claim 1 , wherein the integrated circuit is disposed in a complementary metal oxide semiconductor (CMOS) substrate and the array of capacitive ultrasonic transducers comprises a membrane bonded to the CMOS substrate.7. The ultrasound fingerprint sensing system of claim 1 , wherein the ultrasound-on-a-chip device is configured to focus emitted ultrasound signals approximately at a surface of the ...

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Номер записи: 129
11-06-2020 дата публикации

ULTRASOUND FINGERPRINT DETECTION AND RELATED APPARATUS AND METHODS

Номер: US20200184177A1
Автор: Fife Keith G., Liu Jianwei, Satir Sarp
Принадлежит: Butterfly Network, Inc.

Aspects of the technology described herein relate to sensing a fingerprint of a subject via an ultrasound fingerprint sensor. Certain aspects relate to transmitting and receiving ultrasound data at multiple different frequencies to provide sensing data from different depths within the skin of the subject. Since different ultrasound frequencies are expected to penetrate a subject's skin to different degrees, sensing a finger at multiple ultrasound frequencies may provide information on different physical aspects of the finger. For instance, sound ultrasound frequencies may sense a surface of the skin, whereas other ultrasound frequencies may penetrate through one or more of the epidermal, dermal or subcutaneous layers. The ultrasound fingerprint apparatus may have utility in various applications, including but not limited to mobile electronic devices, such as mobile phones or tablet computers, a laptop computer or biometric access equipment. 1. An ultrasound fingerprint apparatus , comprising: a substrate having a cavity;', 'a membrane coupled to the substrate such that the cavity separates the membrane from at least a portion of the substrate; and', 'first and second electrodes on the substrate and opposite the membrane arranged so that at least part of the first electrode is arranged within the interior of at least a portion of the second electrode., 'a micromachined ultrasonic transducer comprising2. The ultrasound fingerprint apparatus of claim 1 , wherein the first and second electrodes are ring-shaped electrodes claim 1 , and wherein the first electrode is arranged concentrically within the second electrode.3. The ultrasound fingerprint apparatus of claim 1 , wherein the second electrode comprises at least one interior region and wherein the first electrode is arranged within the interior region of the second electrode.4. The ultrasound fingerprint apparatus of claim 1 , further comprising integrated circuitry disposed in the substrate and configured to provide ...

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Номер записи: 130
25-09-2014 дата публикации

MONOLITHIC ULTRASONIC IMAGING DEVICES, SYSTEMS AND METHODS

Номер: US20140288428A1
Автор: Charvat Gregory L., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein. 1. A method for processing a signal from an ultrasonic transducer element , comprising an act of:with a component integrated on the same semiconductor die as the ultrasonic transducer element, converting an analog signal corresponding to an output of the ultrasonic transducer element into a digital signal.2. The method of claim 1 , further comprising an act of:with at least one additional component integrated on the semiconductor die, transmitting data corresponding to the digital signal out of the semiconductor die as a high-speed serial data stream.3. The method of claim 1 , further comprising an act of:with at least one additional component integrated on the semiconductor die, processing the digital signal to reduce the data bandwidth thereof.4. The method of claim 3 , wherein the at least one additional component comprises a digital quadrature demodulator.5. The method of claim 3 , wherein the at least one additional component comprises an averaging module.6. The method of claim 3 , wherein the at least one additional component comprises a matched filter.7. The method of claim 3 , wherein the at least one additional component comprises a mismatched filter.8. The method of claim 3 , wherein the at least one additional ...

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Номер записи: 131
21-07-2016 дата публикации

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME

Номер: US20160207760A1
Автор: Charvat Gregory L., Fife Keith G., Ralston Tyler S., Rothberg Jonathan M., Sanchez Nevada J.
Принадлежит: Butterfly Network, Inc.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices. 1. An apparatus , comprising:a semiconductor wafer having a complementary metal oxide semiconductor (CMOS) integrated circuit;a conductive membrane bonded with the semiconductor wafer to form a bonded structure such that a sealed cavity exists between a bonding surface of the semiconductor wafer and a first side of the conductive membrane, the conductive membrane having a second side distal from the bonding surface of the semiconductor wafer; anda conductive standoff on the first side of the conductive membrane proximate the bonding surface of the semiconductor wafer such that a surface of the conductive standoff forms an interface between the first side of the conductive membrane and the bonding surface, wherein the conductive standoff connects the conductive membrane to the CMOS integrated circuit, andwherein the bonded structure lacks an electrode that is on the second side of the conductive membrane and that overlies the cavity.2. The apparatus of claim 1 , wherein the conductive membrane is a doped silicon layer.3. The apparatus of claim 1 , wherein the conductive standoff forms a closed contour surrounding the cavity.4. The apparatus of claim 1 , wherein the conductive standoff is formed of titanium nitride (TiN).5. The apparatus of claim 1 , wherein the conductive standoff is formed of a metal.6. The apparatus of claim 1 , wherein the conductive membrane has a thickness less than thirty microns.7. A method claim 1 , comprising:bonding a transfer wafer to a semiconductor wafer to form a bonded structure with a sealed cavity, the semiconductor wafer having a ...

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Номер записи: 132
11-07-2019 дата публикации

Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same

Номер: US20190210869A1
Автор: Gregory L. Charvat, Jonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston
Принадлежит: Butterfly Network Inc

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

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Номер записи: 133
11-07-2019 дата публикации

SYSTEM AND METHODS FOR ELECTROKINETIC LOADING OF SUB-MICRON-SCALE REACTION CHAMBERS

Номер: US20190211389A1
Автор: Chen Guojun, Fife Keith G., Ghasemi Farshid, Goryanyov Alex, Kabiri Ali, Lackey Jeremy, REARICK Todd, Rothberg Jonathan M., Schmid Gerard, Schultz Jonathan C.
Принадлежит: Quantum-Si incorporated

Apparatus and techniques for electrokinetic loading of samples of interest into sub-micron-scale reaction chambers are described. Embodiments include an integrated device and related apparatus for analyzing samples in parallel. The integrated device may include at least one reaction chamber formed through a surface of the integrated device and configured to receive a sample of interest, such as a molecule of nucleic acid. The integrated device may further include electrodes patterned adjacent to the reaction chamber that produce one or more electric fields that assist loading the sample into the reaction chamber. The apparatus may further include a sample reservoir having a fluid seal with the surface of the integrated device and configured to hold a suspension containing the samples. 1. An integrated device comprising:a reaction chamber formed through a surface of the integrated device; andat least one electrically conductive layer forming at least one electrode arranged adjacent to the reaction chamber, wherein the at least one electrode, when biased, produces at least one electric field that assists loading a sample into the reaction chamber.2. The integrated device of claim 1 , wherein a maximum dimension of the reaction chamber is less than one micron.3. The integrated device of claim 1 , wherein the at least one electrode is arranged to produce an electric field that has an increased intensity in a first region within 500 nm of an opening to the reaction chamber compared to a second region outside the first region.4. The integrated device of claim 1 , wherein the electric field assists loading a sample from a suspension placed in contact with the surface over the reaction chamber.5. The integrated device of claim 1 , wherein the reaction chamber is configured to hold only one sample for analysis of the sample.6. The integrated device of claim 1 , wherein a bottom of the reaction chamber terminates within one micron from an optical waveguide.7. The integrated ...

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Номер записи: 134
11-07-2019 дата публикации

Integrated device with external light source for probing detecting and analyzing molecules

Номер: US20190212265A1
Автор: Ali Kabiri, Benjamin CIPRIANY, Brett J. Gyarfas, Farshid Ghasemi, Gerard Schmid, Jason W. Sickler, Jeremy Lackey, Jonathan M. Rothberg, Keith G. Fife, Lawrence C. West
Принадлежит: Quantum Si Inc

System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device includes multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes at least one waveguide configured to propagate excitation energy to the sample wells from a region of the integrated device configured to couple with an excitation energy source. A pixel may also include at least one element for directing the emission energy towards a sensor within the pixel. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device. One of multiple markers distinguishable by temporal parameters of the emission energy may label the sample and configuration of the sensor within a pixel may allow for detection of a temporal parameter associated with the marker labeling the sample.

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Номер записи: 135
09-07-2020 дата публикации

COMPACT MODE-LOCKED LASER MODULE

Номер: US20200220317A1
Автор: Ahmad Faisal R., Camara Jose, Cipriany Benjamin, Fife Keith G., Ghasemi Farshid, Glenn John, Glenn Paul E., Jewell Jack, Jordan Jeremy Christopher, REARICK Todd, Rothberg Jonathan M., Schultz Jonathan C., Sickler Jason W., West Lawrence C.
Принадлежит: Quantum-Si incorporated

Apparatus and methods for producing ultrashort optical pulses are described. A high-power, solid-state, passively mode-locked laser can be manufactured in a compact module that can be incorporated into a portable instrument. The mode-locked laser can produce sub-50-ps optical pulses at a repetition rates between 200 MHz and 50 MHz, rates suitable for massively parallel data-acquisition. The optical pulses can be used to generate a reference clock signal for synchronizing data-acquisition and signal-processing electronics of the portable instrument. 1. A mode-locked laser module comprising:a base chassis;a mode-locked laser having a laser cavity assembled on the base chassis;a gain medium located in the laser cavity that exhibits a positive thermal lensing value between one diopter and 15 diopters when the mode-locked laser is producing optical pulses;a pump source arranged to provide a pump beam that is absorbed by the gain medium and causes the positive thermal lensing; anda diagonal rib extending diagonally across the chassis that increases torsional stiffness of the chassis, wherein an intracavity beam of the laser cavity passes through multiple openings in the diagonal rib.2. The mode-locked laser module of claim 1 , wherein the pump source comprises a laser diode arranged to excite the gain medium with the pump beam.3. The mode-locked laser module of claim 1 , wherein the gain medium comprises a solid state crystal that is disposed in a mount and has no active cooling.4. The mode-locked laser module of claim 2 , wherein the mode-locked laser produces optical pulses stably without mechanical adjustments to the laser cavity for thermal lensing values varied over a range from 8 diopters to 12 diopters due to changes in optical power of the pump beam.5. The mode-locked laser module of claim 2 , wherein the mode-locked laser produces optical pulses stably for thermal lensing values varied over a range from one diopter to 15 diopters due to changes in optical power ...

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Номер записи: 136
16-08-2018 дата публикации

Optical system and assay chip for probing, detecting and analyzing molecule

Номер: US20180231465A1
Автор: Ali Kabiri, Benjamin CIPRIANY, Brett J. Gyarfas, Gerard Schmid, Jason W. Sickler, Jeremy Lackey, Jonathan M. Rothberg, Keith G. Fife, Lawrence C. West, Paul E. Glenn
Принадлежит: Quantum Si Inc

Apparatus and methods for analyzing single molecule and performing nucleic acid sequencing. An apparatus can include an assay chip that includes multiple pixels with sample wells configured to receive a sample, which, when excited, emits emission energy; at least one element for directing the emission energy in a particular direction; and a light path along which the emission energy travels from the sample well toward a sensor. The apparatus also includes an instrument that interfaces with the assay chip. The instrument includes an excitation light source for exciting the sample in each sample well; a plurality of sensors corresponding the sample wells. Each sensor may detect emission energy from a sample in a respective sample well. The instrument includes at least one optical element that directs the emission energy from each sample well towards a respective sensor of the plurality of sensors.

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Номер записи: 137
01-08-2019 дата публикации

METHODS AND APPARATUSES FOR PACKAGING AN ULTRASOUND-ON-A-CHIP

Номер: US20190231312A1
Автор: Betts Andrew, Fife Keith G., Liu Jianwei
Принадлежит: Butterfly Network, Inc.

Aspects of the disclosure described herein related to packaging an ultrasound-on-a-chip. In some embodiments, an apparatus includes an ultrasound-on-a-chip that has through-silicon vias (TSVs) and an interposer coupled to the ultrasound-on-a-chip and including vias, where the ultrasound-on-a-chip is coupled to the interposer such that the TSVs in the ultrasound-on-a-chip are electrically connected to the vias in the interposer. In some embodiments, an apparatus includes an ultrasound-on-a-chip having bond pads, an interposer that has bond pads and that is coupled to the ultrasound-on-a-chip, and wirebonds extending from the bond pads on the ultrasound-on-a-chip to the bond pads on the interposer. 1. An apparatus , comprising:an ultrasound-on-a-chip comprising through-silicon vias (TSVs); andan interposer coupled to the ultrasound-on-a-chip and comprising vias;wherein the ultrasound-on-a-chip is coupled to the interposer such that the TSVs in the ultrasound-on-a-chip are electrically connected to the vias in the interposer.2. The apparatus of claim 1 , wherein a thickness of the ultrasound-on-a-chip is about 200 microns to about 300 microns.3. The apparatus of claim 1 , wherein the interposer comprises a heat sink portion.4. The apparatus of claim 3 , wherein the heat sink portion comprises ceramic material.5. The apparatus of claim 4 , wherein the ceramic material is aluminum nitride.6. The apparatus of claim 1 , wherein the interposer further comprises an electrical connectivity portion that includes the vias.7. The apparatus of claim 6 , wherein the electrical connectivity portion comprises an organic claim 6 , glass claim 6 , and/or silicon material.8. The apparatus of claim 1 , wherein the interposer comprises copper patterns protruding towards the ultrasound-on-a-chip from a face of the interposer.9. The apparatus of claim 1 , wherein the ultrasound-on-a-chip and the interposer are coupled together using a surface-mount technology (SMT) process.10. The ...

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Номер записи: 138
10-09-2015 дата публикации

Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same

Номер: US20150251896A1
Автор: Gregory L. Charvat, Jonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston
Принадлежит: Butterfly Network Inc

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

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Номер записи: 139
30-08-2018 дата публикации

CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCERS (CMUTs) AND RELATED APPARATUS AND METHODS

Номер: US20180243792A1
Автор: Alie Susan A., Fife Keith G., Grosjean David, Lutsky Joseph, Rothberg Jonathan M.
Принадлежит: Butterfly Network, Inc.

Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described. 1. A capacitive micromachined ultrasonic transducer (CMUT) , comprising:a first silicon layer;an epitaxial silicon layer disposed on the first silicon layer;a second silicon layer separated from the epitaxial layer by a cavity; anda dielectric layer disposed between the epitaxial layer and the second silicon layer.2. The CMUT of claim 1 , wherein the first silicon layer and epitaxial silicon layer are doped claim 1 , and wherein the dielectric layer has a lower doping concentration than the first silicon layer.3. The CMUT of claim 1 , wherein the dielectric layer is silicon oxide.4. The CMUT of claim 1 , wherein the cavity is disposed in the dielectric layer.5. The CMUT of claim 1 , wherein claim 1 , when the CMUT is operating in a first mode claim 1 , the dielectric layer is configured to not make contact with a bottom boundary of the cavity.6. The CMUT of claim 1 , wherein claim 1 , when the CMUT is operating in a collapse mode claim 1 , the dielectric layer is configured to make contact with a bottom boundary of the cavity.7. The CMUT of claim 6 , wherein the dielectric layer is etched to include at least one bump and claim 6 , when the CMUT is operating in the collapse mode claim 6 , the dielectric layer is configured to make contact with the bottom boundary of the cavity.8. The CMUT of claim 1 , further comprising an oxide layer disposed between the second silicon layer and the dielectric layer claim 1 , wherein the cavity is disposed in the oxide layer.9. ...

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Номер записи: 140
30-07-2020 дата публикации

PACKAGING STRUCTURES AND PACKAGING METHODS FOR ULTRASOUND-ON-CHIP DEVICES

Номер: US20200239299A1
Автор: Fife Keith G., Liu Jianwei
Принадлежит: Butterfly Network, Inc.

A method of forming a multiple layer, hybrid interposer structure includes forming a plurality of first openings through a substrate, the substrate comprising a heat spreading material; forming a first metal material within the plurality of first openings and on top and bottom surfaces of the substrate; patterning the first metal material; forming a dielectric layer over the patterned first metal material; forming a plurality of second openings within the dielectric layer to expose portions of the patterned first metal material on the top and bottom surfaces of the substrate; filling the plurality of second openings with a second metal material, in contact with the exposed portions of the patterned first metal material; forming a third metal material on the top and bottom surfaces of the substrate, the third metal material in contact with the second metal material and the dielectric layer; and patterning the third metal material. 1. A method of forming a multiple layer , hybrid interposer structure , the method comprising:forming a plurality of first openings through a substrate, the substrate comprising a heat spreading material;forming a first metal material within the plurality of first openings and on top and bottom surfaces of the substrate;patterning the first metal material on the top and bottom surfaces of the substrate;forming a dielectric layer over the patterned first metal material on the top and bottom surfaces of the substrate;forming a plurality of second openings within the dielectric layer to expose portions of the patterned first metal material on the top and bottom surfaces of the substrate;filling the plurality of second openings with a second metal material, in contact with the exposed portions of the patterned first metal material;forming a third metal material on the top and bottom surfaces of the substrate, the third metal material in contact with the second metal material and the dielectric layer; andpatterning the third metal material.2. ...

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Номер записи: 141