SEMICONDUCTOR DEVICE PRODUCTION METHOD, SHEET-SHAPED RESIN COMPOSITION, DICING TAPE-INTEGRATED SHEET-SHAPED RESIN COMPOSITION

A production method for a semiconductor device is provided whereby, when peeling a support body from an attached wafer, melting of a sheet-shaped resin composition pasted to the other surface of the wafer can be suppressed. The method comprises: preparing a support body-attached wafer, said support body-attached wafer having the support body bonded, via a temporary fixing layer, to one surface of the wafer having a through electrode formed therein; preparing a dicing tape-integrated sheet-shaped resin composition having a sheet-shaped resin composition having an external shape smaller than the other surface of the wafer formed upon a dicing tape; pasting the other surface of the support body-attached wafer to the sheet-shaped resin composition in the dicing tape-integrated sheet-shaped resin composition; and melting the temporary fixing layer by a solvent and peeling the support body away from the wafer. 1. A semiconductor device production method , comprising:a step A of preparing a wafer with a support including a wafer, a temporary fixing layer, and a support bonded to one side of the wafer, on which a through electrode is formed, with the temporary fixing layer interposed therebetween,a step B of preparing a dicing tape-integrated sheet-shaped resin composition including a dicing tape and a sheet-shaped resin composition smaller in an outer shape than the other side of the wafer formed on the dicing tape,a step C of pasting the other side of the wafer with a support to the sheet-shaped resin composition of the dicing tape-integrated sheet-shaped resin composition, anda step D of dissolving the temporary fixing layer with a solvent to peel the support from the wafer.2. The semiconductor device production method according to claim 1 , comprising a step E of dicing the wafer together with the sheet-shaped resin composition after the step D to obtain a chip with the sheet-shaped resin composition.3. The semiconductor device production method according to claim 2 , ...

Underfill Material, Laminated Sheet and Method for Producing Semiconductor Device

An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt−Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from −50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from −50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement. 1. An underfill material , whereina melt viscosity at 150° C. before heating treatment is 50 Pa·s or more and 3,000 Pa·s or less,{'sub': 'i', 'a viscosity change rate represented by (η2/η1)×100% is 500% or less, where r1 is a melt viscosity at 150° C. before heating treatment and η2 is a melt viscosity at 150° C. after heating treatment at 130° C. for 1 hour, and'}a reaction rate represented by {(Qt−Qh)/Qt}×100% is 90% or more, where Qt is a total calorific value in a process of temperature rise from −50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from −50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.2. The underfill material according to claim 1 , comprising a latent curing accelerator.3. The underfill material according to claim 2 , comprising an acrylic resin claim 2 , and 1 part by weight to 2 parts by weight of the latent curing accelerator relative to 100 parts by weight of the acrylic resin.4. A laminated sheet claim 2 , comprisinga pressure-sensitive adhesive tape having a base material and a pressure-sensitive adhesive layer provided on the base material, and{'claim-ref': {'@idref': 'CLM-00001 ...

Underfill film, sealing sheet, method of manufacturing semiconductor device, and semiconductor device

The present invention provides an underfill film and a sealing sheet that are excellent in thermal conductive property and are capable of satisfactorily filling the space between the semiconductor element and the substrate. The present invention relates to an underfill film having a resin and a thermally conductive filler, in which a content of the thermally conductive filler is 50% by volume or more, an average particle size of the thermally conductive filler is 30% or less of a thickness of the underfill film, and a maximum particle size of the thermally conductive filler is 80% or less of the thickness of the underfill film.

Adhesive film for underfill, adhesive film for underfill integrated with tape for grinding rear surface, adhesive film for underfill integrated with dicing tape, and semiconductor device

The present invention provides an adhesive film for underfill that is capable of increasing a glass transition temperature without losing flexibility. The present invention relates to an adhesive film for underfill containing resin components containing an epoxy resin having a number average molecular weight of 600 or less, a phenol resin having a number average molecular weight exceeding 500, and an elastomer in which a content of the epoxy resin in the resin components is 5 to 50% by weight, and the content of the phenol resin in the resin components is 5 to 50% by weight.

THERMOSETTING RESIN COMPOSITION AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE

Provided are a thermosetting resin composition with which a semiconductor device having a high connection reliability can be provided while securing availability of member materials by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the thermosetting resin composition. The present invention provides a thermosetting resin composition for producing a semiconductor device, the thermosetting resin composition comprising: an epoxy resin; and a novolak-type phenol resin having a hydroxyl equivalent of 200 g/eq or more. 1. A thermosetting resin composition for producing a semiconductor device , the thermosetting resin composition comprising:an epoxy resin; anda novolak-type phenol resin having a hydroxyl equivalent of 200 g/eq or more.2. The thermosetting resin composition according to claim 1 , wherein the thermosetting resin composition is for sealing a semiconductor element.4. The thermosetting resin composition according to claim 1 , wherein the thermosetting resin composition comprises an inorganic filler having an average particle diameter of 10 nm or more and 1000 nm or less.5. The thermosetting resin composition according to claim 1 , wherein the thermosetting resin composition has a thermal expansion coefficient α of 10 ppm/K or more and 200 ppm/K or less after being heat-treated at 175° C. for 1 hour.6. The thermosetting resin composition according to claim 1 , wherein the thermosetting resin composition has a storage elastic modulus E′ of 100 MPa or more and 10000 MPa or less after being heat-treated at 175° C. for 1 hour.7. The thermosetting resin composition according to claim 1 , wherein the thermosetting resin composition is a sheet-like thermosetting resin composition.8. A method for producing a semiconductor device claim 1 , the method comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a fixing step of fixing a semiconductor element to ...

Semiconductor Device Manufacturing Method

A method for manufacturing a semiconductor includes: a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted onto a semiconductor chip, a Step B of preparing an adherend, a Step C of pasting the chip with sheet-shaped resin composition onto the adherend so that the sheet-shaped resin composition serves as a pasting surface, a Step D of heating the sheet-shaped resin composition to semi-cure the sheet-shaped resin composition after the Step C, and a Step E of heating the sheet-shaped resin composition at a higher temperature than in the Step D to cure the sheet-shaped resin composition after the Step D. 1. A method for manufacturing a semiconductor , comprising:a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted onto a semiconductor chip,a Step B of preparing an adherend,a Step C of pasting the chip with sheet-shaped resin composition onto the adherend so that the sheet-shaped resin composition serves as a pasting surface,a Step D of heating the sheet-shaped resin composition to semi-cure the sheet-shaped resin composition after the Step C, anda Step E of heating the sheet-shaped resin composition at a higher temperature than in the Step D to cure the sheet-shaped resin composition after the Step D.2. The method for manufacturing a semiconductor device according to claim 1 , wherein the sheet-shaped resin composition has a thermal curing rate of 10% or more after heating at 200° C. for 10 seconds.3. The method for manufacturing a semiconductor device according to claim 1 , wherein the adherend has an unevenness of 3 μm to 100 μm on a surface onto which the sheet-shaped resin composition is pasted.41. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor chip has an unevenness of 3 μm to 100 μm on a surface onto which the sheet-shaped resin composition is pasted. The present invention relates to a ...

Semiconductor Device Manufacturing Method

A method for producing a semiconductor device includes: a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted onto a bump formation surface of a semiconductor chip, a Step B of preparing a substrate for mounting on which an electrode is formed, a Step C of pasting the chip with resin composition to the substrate for mounting so that the resin composition serves as a pasting surface with the bump formed on the semiconductor chip facing toward the electrode formed on the substrate for mounting, a Step D of heating the resin composition to semi-cure the resin composition after the Step C, and a Step E of heating the resin composition at a higher temperature than that in the Step D to cure the resin composition after the Step D while bonding the bump and the electrode. 1. A method for producing a semiconductor device , comprising:a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted to a bump formation surface of a semiconductor chip,a Step B of preparing a substrate for mounting on which an electrode is formed,a Step C of pasting the chip with sheet-shaped resin composition to the substrate for mounting so that the sheet-shaped resin composition serves as a pasting surface with the bump formed on the semiconductor chip facing toward the electrode formed on the substrate for mounting,a Step D of heating the sheet-shaped resin composition to semi-cure the sheet-shaped resin composition after the Step C, anda Step E of heating the sheet-shaped resin composition at a higher temperature than that in the Step D to cure the sheet-shaped resin composition after the Step D while bonding the bump and the electrode.2. The method for producing a semiconductor device according to claim 1 , whereinthe sheet-shaped resin composition has a minimum melt viscosity of 10 Pa·s to 5,000 Pa·s at less than 200° C.;a thermal curing rate of 6% or more after heating at ...

Method for Manufacturing Semiconductor Device, Sheet-Shaped Resin Composition, and Dicing Tape-Integrated Sheet-Shaped Resin Composition

Provided is a method for manufacturing a semiconductor device, which can manufacture a semiconductor device at a high yield ratio by suppressing dissolution of a sheet-shaped resin composition when cleaning a wafer after peeling a supporting member from the wafer. The present invention provides a method for manufacturing a semiconductor device, the method including: a step A of preparing a wafer; a step B of pasting together a second main surface of the wafer and a supporting member including a support and a temporary fixing layer formed on the support with the temporary fixing layer interposed between the second main surface and the supporting member; a step C of preparing a laminate including a dicing tape and an ultraviolet curable sheet-shaped resin composition laminated on the dicing tape; a step D of pasting together a first main surface of the wafer and the sheet-shaped resin composition; a step E of peeling the supporting member from the wafer after the step D; a step F of cleaning the second main surface of the wafer after the step E; and a step S of irradiating a peripheral part of the sheet-shaped resin composition with ultraviolet light to cure the peripheral part after the step D and before the step F, the peripheral part not overlapping with the wafer in a plan view. 1. A method for manufacturing a semiconductor device , the method comprising:a step A of preparing a wafer having a first main surface having at least a connecting member formed thereon;a step B of pasting together a second main surface opposite to the first main surface of the wafer and a supporting member including a support and a temporary fixing layer formed on the support with the temporary fixing layer interposed between the second main surface and the supporting member, to form a wafer with a supporting member;a step C of preparing a dicing tape-integrated sheet-shaped resin composition including a dicing tape and an ultraviolet curable sheet-shaped resin composition laminated on ...

DICING-TAPE INTEGRATED FILM FOR BACKSIDE OF SEMICONDUCTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the transfer of the coloring agent contained in a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape onto the dicing tape. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, the film for the backside of a flip-chip semiconductor contains a coloring agent, and the solubility of the coloring agent to toluene at 23° C. is 2 g/100 ml or less. 1. A dicing-tape integrated film for a backside of a semiconductor havinga dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate anda film for a backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, whereinthe film for the backside of a flip-chip semiconductor contains a coloring agent, andthe solubility of the coloring agent to toluene at 23° C. is 2 g/100 ml or less.2. The dicing-tape integrated film for the backside of a semiconductor according to claim 1 , whereinthe coloring agent has an anthraquinone skeleton.3. The dicing-tape integrated film for the backside of a semiconductor according to claim 1 , wherein{'sup': '2', 'a difference between surface free energy E1 of the film for the backside of a flip-chip semiconductor and surface free energy E2 of the pressure-sensitive adhesive layer (E1-E2) is 10 mJ/mor more.'}4. A method of manufacturing a semiconductor device using the dicing-tape integrated film for the backside of a semiconductor according to havinga step A of pasting a semiconductor wafer on a film for the backside of a flip-chip semiconductor in the dicing-tape integrated film for the ...

DICING-TAPE INTEGRATED FILM FOR BACKSIDE OF SEMICONDUCTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the increase of the peel strength between the dicing tape and the film for the backside of a flip-chip semiconductor due to heating. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, in which the difference (γ2−γ1) of the surface free energy γ2 and the surface free energy γ1 is 10 mJ/mor more, where γ1 represents the surface free energy of the pressure-sensitive adhesive layer and γ2 represents the surface free energy of the film for the backside of a flip-chip semiconductor. 1. A dicing-tape integrated film for a backside of a semiconductor havinga dicing tape having a substrate and pressure-sensitive adhesive layer formed on the substrate anda film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, wherein{'sup': '2', 'sub': '1', 'the difference (γ2−γ1) of the surface free energy γ2 and the surface free energy γ1 is 10 mJ/mor more, in which γrepresent s the surface free energy that is calculated from contact angles of water and iodomethane measured using a contact angle gauge according to a geometric mean method on the pressure-sensitive adhesive layer, and γ2 represents the surface free energy that is calculated from contact angles of water and iodomethane measured using a contact angle gauge according to a geometric mean method on the film for the backside of a flip-chip semiconductor after the pressure-sensitive adhesive layer and the film for the backside of a flip-chip semiconductor are peeled from each other at the interface.'}2. The dicing-tape integrated film for the backside of a semiconductor according to claim 1 , wherein ...

UNDERFILL SHEET, UNDERFILL SHEET INTEGRATED WITH TAPE FOR GRINDING REAR SURFACE, UNDERFILL SHEET INTEGRATED WITH DICING TAPE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

An object of the present invention is to provide an underfill sheet that enables suitable filling of unevenness of a circuit surface of a semiconductor element, a suitable connection of a terminal of the semiconductor element and a terminal of an adherend, and suppression of outgas. The present invention relates to the underfill sheet having a viscosity of 1,000 Pa·s to 10,000 Pa·s at 150° C. and 0.05 to 0.20 rotations/min; and a minimum viscosity of 100 Pa·s or more at 100 to 200° C. and 0.3 to 0.7 rotations/min. 1. An underfill sheet having:a viscosity of 1,000 Pa·s to 10,000 Pa·s at 150° C. and 0.05 to 0.20 rotations/min; anda minimum viscosity of 100 Pa·s or more at 100 to 200° C. and 0.3 to 0.7 rotations/min.2. The underfill sheet according to claim 1 , comprising 15 to 70% by weight of a silica filler having an average particle size of 0.01 to 10 μm and 2 to 30% by weight of an acrylic resin.3. The underfill sheet according to claim 1 , wherein a storage modulus E′ [MPa] and a thermal expansion coefficient α [ppm/K] after thermally curing at 175° C. for 1 hour satisfy the following Formula (1) at 25° C.:{'br': None, 'i': 'E′×α<', '250,000 [Pa/K]\u2003\u2003(1).'}4. The underfill sheet according to claim 3 , wherein the storage modulus E′ is 100 to 10 claim 3 ,000 [MPa] claim 3 , and the thermal expansion coefficient α is 10 to 200 [ppm/K].5. The underfill sheet according to claim 3 , wherein the storage modulus E′ [MPa] and the thermal expansion coefficient α [ppm/K] satisfy the following Formula (2):{'br': None, 'i': 'E′×α<', '10,000<250,000 [Pa/K]\u2003\u2003(2).'}6. The underfill sheet according to claim 1 , comprising a thermosetting resin.7. The underfill sheet according to claim 6 , wherein the thermosetting resin contains an epoxy resin and a phenol resin.8. An underfill sheet integrated with a tape for grinding a rear surface claim 1 , comprising the tape for grinding the rear surface and the underfill sheet according to laminated on the tape for ...

Underfill material, multilayer sheet and method for manufacturing semiconductor device

本發明提供一種具有充分之硬化反應性並且即便承受熱歷程黏度變化亦較小而可達成良好之電性連接之底部填充材及具備其之積層片、以及半導體裝置之製造方法。本發明係一種底部填充材，其係加熱處理前於150℃下之熔融黏度為50Pa．s以上且3000Pa．s以下，將上述加熱處理前於150℃下之熔融黏度設為η1，並將於130℃下進行1小時加熱處理後於150℃下之熔融黏度設為η2時，(η2/η1)×100所表示之黏度變化率為500%以下，將DSC測定中自-50℃至300℃為止之升溫過程中之總發熱量設為Qt，並將於175℃下進行2小時加熱後自-50℃至300℃為止之升溫過程中的總發熱量設為Qh時，{(Qt-Qh)/Qt}×100所表示之反應率為90%以上。

Method for manufacturing semiconductor device, sheet-like resin composition, and dicing tape integrated sheet-like resin composition

【課題】 ウェハからの支持部材の剥離後にウェハを洗浄する際、シート状樹脂組成物の溶解を抑制して歩留まり良く半導体装置を製造可能な半導体装置の製造方法を提供すること。 【解決手段】 本発明は、ウェハを準備する工程Ａと、前記ウェハの第２主面と、支持体上に仮止め層が形成された支持部材とを該仮止め層を介して貼り合わせる工程Ｂと、ダイシングテープ上に紫外線硬化型のシート状樹脂組成物が積層されたものを準備する工程Ｃと、前記ウェハの第１主面と前記シート状樹脂組成物とを貼り合わせる工程Ｄと、前記工程Ｄの後、前記支持部材を前記ウェハから剥離する工程Ｅと、前記工程Ｅの後、前記ウェハの第２主面を洗浄する工程Ｆとを含み、さらに、前記工程Ｄの後であってかつ前記工程Ｆの前に、平面視で前記ウェハと重複しない前記シート状樹脂組成物の周縁部を紫外線照射により硬化させる工程Ｓを含む半導体装置の製造方法である。 【選択図】 図４

Underfill sheet, underfill sheet integrated with tape for grinding rear surface, underfill sheet integrated with dicing tape, and method for manufacturing semiconductor device

本發明提供一種底部填充片，其可良好地覆蓋半導體元件之電路面之凹凸，可將半導體元件之端子與被接著體之端子良好地連接，可減少逸氣。本發明係關於一種底部填充片，其於150℃、0.05~0.20轉/分鐘時之黏度為1000~10000 Pa‧s，於100~200℃、0.3~0.7轉/分鐘時之最低黏度為100 Pa‧s以上。

Sheet-like resin composition, multilayer sheet and method for manufacturing semiconductor device

本發明提供一種抑制對被黏著體與片狀樹脂組合物之界面之可靠性造成影響之空隙之產生，而可製造高可靠性之半導體裝置的半導體裝置之製造方法。本發明係用以填充被黏著體與電性連接於該被黏著體之半導體元件之間之空間的熱硬化性片狀樹脂組合物，且於溫度範圍50℃~250℃、升溫速度10℃/min、頻率1Hz之測定條件下測定上述片狀樹脂組合物之黏度時，溫度150℃下之黏度η150為0.05MPa‧s≦η150≦2.2MPa‧s，溫度200℃下之黏度η200為1.0MPa‧s≦η200≦100.0MPa‧s。

Asynchronous doubled control system

3-Hydroxypropyl ester of 2-trifluoromethylacrylic acid and process for producing same

The invention relates to a novel compound, 3-hydroxypropyl ester of 2-trifluoromethyl acrylic acid, represented by the formula [1]. The invention further relates to a process for producing the compound. This process includes reacting 2-trifluoromethylacrylic halide represented by the formula [2], wherein the halogen atom is F or Cl, with 1,3-propanediol represented by the formula [3], in the presence of a base

FLUORINE BISMALEAIC ACID AMIDES AND BISMALEINIMIDES AND THEIR USE IN HEAT-CURABLE PLASTICS

BISMALEAMIC ACIDS CONTAINING FLUORINE AND BISMALEIMIDES PRODUCED THEREFOR USEFUL FOR THERMOSETTING RESINS

L'invention concerne un acide bismaléamique contenant du fluor. Selon l'invention, il est représenté par la formule générale : (CF DESSIN DANS BOPI) dans laquelle A représente un groupe organique divalent ayant une liaison à insaturation éthylénique; Rf représente un atome de fluor ou un groupe perfluoroalkyl R**1 et R**2 sont identiques ou différents et chacun représente un atome d'hydrogène, un groupe méthyl groupe éthyle ou un groupe méthyle halogéné et chaque -NH- est à la position m- ou p- relativement à la liaison éther aromatique -O-. L'invention s'applique notamment à la préparation de résines thermodurcissables. A fluorine-containing bismaleamic acid is disclosed. According to the invention, it is represented by the general formula: (CF DRAWING IN BOPI) in which A represents a divalent organic group having an ethylenically unsaturated bond; Rf represents a fluorine atom or a perfluoroalkyl group R ** 1 and R ** 2 are the same or different and each represents a hydrogen atom, a methyl group ethyl group or a halogenated methyl group and each -NH- is at the side m- or p- position relative to the aromatic ether bond -O-. The invention applies in particular to the preparation of thermosetting resins.

Network control system

Engine controller

Respective positive terminal electric potentials of exhaust gas sensors are sequentially selectively inputted to an analog input terminal of a multi-channel AD converter through a multiplexer. An offset voltage is applied to respective negative terminals of the exhaust gas sensors. This offset voltage is inputted to another input terminal of the multi-channel AD converter. A microprocessor detects a generating voltage of the exhaust gas sensors by the difference between a digital converting value of the positive terminal electric potential and a digital converting value of the negative terminal electric potential. The microprocessor also individually judges that each of the digital converting values is excessively small and excessively large. Thus, the microprocessor judges the existence of ground, sky short circuit and disconnection abnormalities of the negative terminal and the positive terminal.

Horizontal fillet welding device device for frame structure

Dicing die-bonding film and method for manufacturing semiconductor device

【課題】ピックアップ性が良好なダイシングダイボンドフィルムなどを提供する。【解決手段】ダイシングダイボンドフィルム１は、基材層２１及び基材層に重なった粘着剤層２２を有するダイシングテープ２０と、ダイシングテープに重ねられたダイボンドシート１０とを備える。粘着剤層は、少なくともアルキル（メタ）アクリレート単位と、架橋性基含有（メタ）アクリレート単位と、をモノマー単位として分子中に有するアクリル共重合体を含む。アクリル共重合体は、架橋性基含有（メタ）アクリレート単位のうち一部が、ラジカル重合性炭素－炭素二重結合を有しており、アルキル（メタ）アクリレート単位１００モル部に対して、架橋性基含有（メタ）アクリレート単位を３０モル部以上６０モル部以下含み、架橋性基含有（メタ）アクリレート単位のうちの５０モル％以上９５モル％以下がラジカル重合性炭素－炭素二重結合を含有している。【選択図】図１

Mobile communication control system and mobile communication control method

(57)【要約】 【課題】 従来着信のみに使用していた個別無線呼出装 置機能を有効活用することにある。 【解決手段】 交換局２において相手端末装置１への発 呼の時間により個別無線呼出装置の基地局５または携帯 電話装置の基地局４を切り替え、携帯電話装置６を呼び 出す呼出制御手段と、定められた時刻により個別無線呼 出装置の基地局５または携帯電話装置の基地局４に対し 携帯電話装置６へ情報を送信する送信制御手段を有し、 携帯電話装置６は定められた時刻または基地局からの個 別無線呼出の無線信号により個別無線呼出または携帯電 話の待ち受けを切り替える切替手段とを備える。これに より、従来着信のみに使用していた個別無線呼出装置機 能を有効活用することができ、また携帯電話装置６へ着 呼がある度に個別無線呼出装置の無線チャネルと携帯電 話装置の無線チャネルの両方を使用しないため、有限な 無線周波数チャネルを有効活用することができる。

Sheet-like resin composition, laminate sheet, and semiconductor device production method

本發明提供一種能夠充分地抑制被附體與片狀樹脂組合物之界面處之孔隙並且能夠抑制安裝時之過量溢出之片狀樹脂組合物及具備其之積層片材、以及半導體裝置之製造方法。本發明之片狀樹脂組合物係用以填充被附體與和該被附體電性連接之半導體元件之間之空間之熱硬化性之片狀樹脂組合物，且熱硬化前之80℃~200℃下之最低熔融黏度為2000Pa‧s以上，將DSC測定中之升溫速度10℃/min下之-10℃至350℃之升溫過程中的全部放熱量設為Qt，將於250℃下加熱10秒鐘之加熱過程中之全部放熱量設為Qh時，下述式所表示之反應率R為50%以下。 R={(Qt-Qh/Qt)}×100(%)

Dicing die-bonding film

【課題】本発明は、エキスパンド工程において、粘着剤層にワレが生じることを抑制できるダイシングダイボンドフィルムを提供する。【解決手段】本発明に係るダイシングダイボンドフィルムは、基材層上に粘着剤層が積層されたダイシングテープと、前記ダイシングテープの粘着剤層上に積層されたダイボンド層と、を備え、前記粘着剤層は、アクリル系ポリマーを含み、前記アクリル系ポリマーは、炭素数９以上のアルキル基を有するアルキル（メタ）アクリレートの構成単位を１５モル％以上含んでおり、温度－１５℃における前記粘着剤層のせん断貯蔵弾性率が、１０ＭＰａ以下であり、ＦＯＸの式を用いて算出した前記アクリル系ポリマーのガラス転移温度が、－４７℃以上５℃以下である。【選択図】 図１

Yosetsusochi

Yosetsusochi

ダイシングダイボンドフィルム

【課題】ダイボンドフィルムのピックアップ適性及びダイボンド適性に優れながら、常温エキスパンド時及びその後において、ダイボンドフィルムと粘着剤層との間で浮きが起こりにくいダイシングダイボンドフィルムを提供する。【解決手段】基材と、前記基材上に積層された粘着剤層とを有するダイシングテープと、前記ダイシングテープにおける前記粘着剤層上に積層されたダイボンドフィルムと、を有し、前記ダイボンドフィルムの、周波数１０Ｈｚの条件で測定される２５℃における貯蔵弾性率Ｅ’が３〜５ＧＰａである、ダイシングダイボンドフィルム。【選択図】図１

マウントの設計方法、マウントの設計プログラム及びマウントの設計装置

【課題】マウントの具体的な構成を得る。【解決手段】マウントの設計方法は、第１ステップと、第２ステップと、第３ステップと、を有する。第１ステップでは、マウント１４の構成を決定する設計変数とマウント１４の特性値との関係を示す応答曲面を作成する。第２ステップでは、マウント１４の要求特性を決定する。第３ステップでは、第１ステップで作成された応答曲面を用いて要求特性を満たす設計変数のマウント１４を探索する。【選択図】図１

Yosetsusochi

Yosetsusochi

テストアンドセツト命令方式

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

２−トリフルオロメチル−６−フルオロベンズアルデヒドおよびその誘導体の製造方法

【課題】工業的規模での製造に適した２−トリフルオロメチル−６−フルオロベンズアルデヒドおよびその誘導体の合成方法を提供する。 【解決手段】２，３−ジメチルフルオロベンゼンを塩素（Ｃｌ 2 ）と反応させ、２−トリクロロメチル−６−フルオロベンザルクロリドを得（第１工程）、次いで２−トリクロロメチル−６−フルオロベンザルクロリドを、液相でフッ化水素（ＨＦ）と反応させ、２−トリフルオロメチル−６−フルオロベンザルクロリドを得（第２工程）、次いで２−トリフルオロメチル−６−フルオロベンザルクロリドをルイス酸触媒下において水と接触させ、２−トリフルオロメチル−６−フルオロベンズアルデヒドを得る（第３工程）。 本発明によれば、従来よりも格段に容易な操作で、高収率、高純度で、２−トリフルオロメチル−６−フルオロベンズアルデヒドを製造できる。 【選択図】 なし

ダイシングダイボンドフィルム

【課題】ダイボンドフィルムの捲れを抑制するのに適するとともに巻き跡を生じにくく、且つ効率よく製造するのに適した、ダイシングダイボンドフィルムを提供する。【解決手段】本発明のダイシングダイボンドフィルムＸは、ダイシングテープ１０およびダイボンドフィルム２０を備える。ダイシングテープ１０は、基材１１と粘着剤層１２とを含む積層構造を有する。ダイボンドフィルム２０は、ダイシングテープ１０における粘着剤層１２に剥離可能に密着している。ダイボンドフィルム２０の外周端２０ｅは、フィルム面内方向Ｄにおいて粘着剤層１２の外周端１２ｅから５００μｍ以内の距離にある。【選択図】図１

引戸の位置保持装置

【課題】マグネットの吸着磁力を利用して引戸を全開又は全閉位置で位置保持するにあたり、キャッチ部５２を、マグネット部６２とは非接触状態で当接部６３に当接させ、マグネット部６２の磁気力を、挿通孔６３１の内周域を磁路として磁力伝達させ、揺動可能な状態で磁力吸着させて引戸を位置保持し、吸着状態でマグネット部６２との対面間隔を調整操作して、引戸ごとに吸引磁気力の強弱の可変調整を行えるようにする。 【解決手段】キャッチ部５２を、マグネット部６２を挿通孔６３１を介して対向離間した状態で当接部６３に当接させて、挿通孔６３１の内周域を、磁力吸着させる磁路としての機能と、両者の対面間隔を調整して引戸１の吸着保持力を設定する調整域Ｓとして機能と兼用可能に構成する。 【選択図】図７

シリンダ錠装置

【課題】 戸体１の内部側からの施解錠操作によらず、シリンダ錠３２を外部から施解錠操作することで、表示体４を、その外周面部をシリンダ錠３２の前面側となるシリンダケース３１から出没動作できるようにして、一般人の立ち入りが規制され、常時施錠状態とするような管理が要求される戸体１に対して採用することができ、殊に、解錠状態で突出表示できるようにする。【解決手段】シリンダケース３１に内装されたシリンダ錠３２と錠本体２とを回動可能に連動連結する連結体３３のの外周縁部にカム部３４を一体形成し、表示体４に、その後面側から延出して先端部がカム面３４ａに達する長さの従動軸４１を設けて、シリンダ錠３２の施解錠操作に伴って従動する表示体４を、シリンダケース３１の前面から突出表示されるよう出没可能に構成する。【選択図】 図２

片狀樹脂組合物、背面研磨用帶一體型片狀樹脂組合物、切晶帶一體型片狀樹脂組合物、半導體裝置之製造方法及半導體裝置

本發明係關於一種片狀樹脂組合物，其係用於被接著體與覆晶連接於被接著體上之半導體元件之界面密封者，並且以10℃/min之升溫速度自25℃升溫至300℃時之重量減少率為2%以下，藉由卡氏法測得之吸濕率為1%以下，於相對於片狀樹脂組合物整體為1重量%以上且10重量%以下之範圍內含有酸解離常數為3.0以上且5.0以下之範圍內之有機酸。

床下収納庫又は点検口用の蓋体

【課題】蓋体に取手を取り付ける作業を簡易に行うことができるとともに、合成樹脂材料で一体成形した蓋体にも適用することができ、操作性が良好な、蓋体を手動操作で開閉するための取手が取り付けられている床下収納庫又は点検口用の蓋体を提供すること。【解決手段】蓋体１の側縁にコ字状の切欠部１１を形成し、この切欠部１１に、凹状の取手部材収納部２１を備えた取付部材２を嵌め込んで取り付けるようにするとともに、この取付部材２に、枢軸３を介して、取手部材収納部２１に収納された時に取手部材収納部２１の開口を覆う板状の本体部４１とこの本体部４１から延設された指掛かり部４２とを備えた断面Ｌ字状の取手部材４を設ける。【選択図】図１

シート状樹脂組成物、積層シート及び半導体装置の製造方法

【課題】 タックを抑制してハンドリング性が良好であるとともに、実装時の過剰なはみ出しの抑制が可能なシート状樹脂組成物及びこれを備える積層シート、並びに半導体装置の製造方法を提供すること。【解決手段】 被着体と該被着体と電気的に接続された半導体素子との間の空間を充填するための熱硬化性のシート状樹脂組成物であって、軟化点が４０℃以上であるエポキシ樹脂、ラジカル重合性化合物、熱可塑性樹脂、無機充填剤、及び１０時間半減期温度が１２２℃以下であるラジカル発生剤を含むシート状樹脂組成物。【選択図】 図１Ｄ

シート状樹脂組成物、積層シート及び半導体装置の製造方法

【課題】 被着体とシート状樹脂組成物との界面でのボイドの発生を抑制可能であるとともに、実装後の過剰なはみ出しの抑制が可能なシート状樹脂組成物、積層シート及び半導体装置の製造方法を提供すること。【解決手段】 本発明は、被着体と該被着体と電気的に接続された半導体素子との間の空間を充填するための熱硬化性のシート状樹脂組成物であって、熱硬化前の８０℃〜２００℃における最低溶融粘度が１００Ｐａ・ｓ以上２５００Ｐａ・ｓ以下であり、下記式で表わされるチクソトロピックインデックスＴＩが１６以下のシート状樹脂組成物である。ＴＩ＝η５／η５０【選択図】 図１Ｅ

負荷電流検出装置および負荷電流検出方法

【課題】ＰＷＭ周期を変化させて負荷電流制御を行う際に、電流検出の応答性を向上させる。 【解決手段】リニアソレノイド（１）の実電流値をモニタし、実電流値が目標電流値に到達するまでＯＮまたはＯＦＦを継続することが可能なＰＷＭ周期を変化させて電流フィードバック制御を行う負荷電流検出装置（１００）であって、ＰＷＭ周期が電流値モニタ周期より大きくなった状態において、直前の電流値モニタ周期内で検出された実電流値の時系列データが、順次単調増加していく場合、または順次単調減少していく場合には、直前の電流値モニタ周期内の最後に検出された実電流値を検出電流として採用する電流モニタ処理部（１１）を備える。 【選択図】図１

シート状樹脂組成物、積層シート及び半導体装置の製造方法

【課題】 低温下において引張応力により好適に破断されるシート状樹脂組成物及びその用途を提供すること。 【解決手段】 複数の突起電極が形成された半導体ウェハの回路面とシート状樹脂組成物とを貼り合わせる工程Ａと、前記半導体ウェハを分割可能にする工程Ｂと、−２０℃〜２５℃の条件下において、引張応力を加えることにより、前記半導体ウェハを前記シート状樹脂組成物とともに破断してシート状樹脂組成物と半導体チップとの積層体を得る工程Ｃと、被着体と前記積層体の半導体チップとの間の空間を前記シート状樹脂組成物で充填しつつ前記半導体チップの突起電極と前記被着体とを電気的に接続する工程Ｄとを工程Ａ−Ｂ−Ｃ−Ｄ又は工程Ｂ−Ａ−Ｃ−Ｄの順で含む半導体装置の製造方法に用いられる熱硬化性のシート状樹脂組成物であって、熱硬化前の０℃における貯蔵弾性率が１ＧＰａ以上２０ＧＰａ以下であるシート状樹脂組成物。 【選択図】 図５

人形付き衣服・身の回り品

(57)【要約】 【課題】衣服や身の回り品のデザインの多様性を向上さ せ、衣服を着ることの大切さや楽しさを年少者に教える という教育的効果を発揮でき、大切な人形を外出先で紛 失する恐れを減少させる。 【解決手段】人形３と、人が着用する衣服本体１及び／ 又は身の回り品とを組み合わせる。人形３に着せること ができる人形用衣服２を、衣服本体１及び／又は身の回 り品に設ける。この人形用衣服２を人形３に着せること によって、人形３を衣服本体１及び／又は身の回り品に 着脱可能に取り付ける。

片狀樹脂組合物及半導體裝置之製造方法

本發明提供一種不變更既有之製程便可簡便地進行用於半導體元件安裝之對位的片狀樹脂組合物及使用其之半導體裝置之製造方法。本發明係用以填充被黏著體與電性連接於該被黏著體之半導體元件之間之空間的片狀樹脂組合物，且平行透過率為10%以上。片狀樹脂組合物之霧度較佳為80%以下。片狀樹脂組合物較佳為波長580nm下之透過率為15%以上。

携帯電話端末用有線電話機アダプタ

(57)【要約】 【課題】 携帯電話端末またはアナログ回線のいずれか 一方の契約のみで携帯電話端末の無線チャネル経由で有 線電話機を使用できる携帯電話端末用電話機アダプタを 提供すること。 【解決手段】 基地局１と無線チャネルを通して通信す る携帯電話端末２と有線電話機５間にアダプタ４を接続 し、有線電話機５から基地局１への発呼処理と、基地局 １から有線電話機５への着呼処理をアダプタ４で行って 基地局１と有線電話機５との間で携帯電話端末２の無線 チャネルを通して通話を可能とし、かつ、有線電話機５ から基地局の切断と基地局１から有線電話機の切断処理 をアダプタ４により実行して、基地局１と有線電話機５ との間の通話中を切断可能にする。

Automatic horizontal fillet welding device

Dicing-tape integrated film for backside of semiconductor and method of manufacturing semiconductor device

The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the transfer of the coloring agent contained in a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape onto the dicing tape. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, the film for the backside of a flip-chip semiconductor contains a coloring agent, and the solubility of the coloring agent to toluene at 23° C. is 2 g/100 ml or less.