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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 13. Отображено 13.
23-02-2011 дата публикации

Semiconductor package and manufacturing method thereof

Номер: CN0101980359A
Автор: GUANGXIONG CHEN, SHENGMIN WANG, XIANGMING FENG, CHEN GUANGXIONG, WANG SHENGMIN, FENG XIANGMING
Принадлежит:

The invention discloses a semiconductor package and a manufacturing method thereof. The semiconductor package comprises a substrate unit, a semiconductor assembly, a packing body, a seed layer and a heat dissipation structure. The semiconductor assembly is arranged on the substrate unit. The packing body wraps the semiconductor assembly, the packing body defines a concave part and is provided with a first packing surface, and the concave part is extended to the first packing surface. The seed layer is formed on the first packing surface. The heat dissipation structure is formed on the seed layer.

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Номер записи: 1
25-08-2010 дата публикации

Technology and device for recovering ammonia from garbage leachate in domestic garbage sanitary landfill site

Номер: CN0101811744A
Автор: CHEN SHI, FENG XIANGMING, GU FEI, HUANG KAIXING, LI WU, LI YUJIE, LI ZHIQIN, LIANG SHUNWEN, MENG LIAO, SUN ZHIJUN, WANG KEHONG, XU DIANGUANG, SHI CHEN, XIANGMING FENG, FEI GU, KAIXING HUANG, WU LI, YUJIE LI, ZHIQIN LI, SHUNWEN LIANG, LIAO MENG, ZHIJUN SUN, KEHONG WANG, DIANGUANG XU
Принадлежит:

The invention provides a technology and device for recovering ammonia from garbage leachate in a domestic garbage sanitary landfill site. The method comprises the following steps: (1) removal of ammonia in garbage leachate: adding alkaline chemicals into the leachate to regulate the pH value of the garbage leachate to 9-11, and removing ammonia in the garbage leachate in an ammonia removal tower by using an air stripping method; (2) ammonia recovery: recovering ammonia sulfate from gas containing ammonia by using a sulfuric acid solution absorption method, wherein the absorption is realized by two absorption reactors: in the first absorption reactor, 85-95% of gas containing ammonia is processed, and the concentration of ammonia sulfate in the circulating mother liquor in the first absorption reactor is lower than the saturation concentration of ammonia sulfate, thereby preventing ammonia sulfate from crystallizing; and the unsaturated circulating mother liquor in the first absorption reactor ...

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Номер записи: 2
13-06-2023 дата публикации

LVDS (Low Voltage Differential Signaling) pre-emphasis clock driving circuit with capacitor

Номер: CN116260434A
Автор: FENG XIANGMING, QU MING, WANG JUNCONG, WEI HONGTAO, ZHAI YUE, GONG LILIN, WANG HAIDONG, SONG MINGYU
Принадлежит:

The invention relates to an LVDS (Low Voltage Differential Signaling) pre-emphasis clock driving circuit with a capacitor, and belongs to the field of microcircuit structures. The circuit comprises an LVDS (Low Voltage Differential Signaling) main body signal structure path and a pre-emphasis signal path, wherein a capacitor is added in the pre-emphasis signal path. An input signal of the LVDS main body path is connected with an input signal of the pre-emphasis path, and an output signal of the LVDS main body path is connected with an output signal of the pre-emphasis path. The invention has the advantages of simple structure, high efficiency and low power consumption.

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Номер записи: 3
18-05-2011 дата публикации

Method and packaging mould for manufacturing semiconductor packaging piece

Номер: CN0102064118A
Автор: TIANCI CHEN, GUANGXIONG CHEN, SHENGMIN WANG, XIANGMING FENG, YUYING LI, BINGYUN ZHENG, CHEN TIANCI, CHEN GUANGXIONG, WANG SHENGMIN, FENG XIANGMING, LI YUYING, ZHENG BINGYUN
Принадлежит:

The invention relates to a method and packaging mould for manufacturing a semiconductor packaging piece. The manufacturing method comprises the steps of: firstly, providing heat radiating fins; then providing an element to be packaged, which comprises a substrate and a plurality of semiconductor elements arranged on the substrate; then forming a packaging body between the heat radiating fins and the element to be packaged, wherein the packaging body covers the semiconductor elements; then forming a plurality of first cutting slits passing through part of the heat radiating fins and the packaging body; and then forming a plurality of second cutting slits passing through the rest part of the substrate and the packaging body and extending to the first cutting slits.

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Номер записи: 4
20-11-2002 дата публикации

Electroplating tin-bithmuth alloy plating liquor and its preparation method

Номер: CN0001380445A
Автор: FENG XIANGMING, LI WEIDONG, ZUO ZHENGZHONG, XIANGMING FENG, WEIDONG LI, ZHENGZHONG ZUO
Принадлежит:

The basic composition of the electroplating tin-bismuth alloy plating solution contains SnSO4 or SnCl2 30-60 g/l alloy plating solution, complexing agent 400-600 ml/l alloy plating solution, stabilizing agent 80-120 ml/l alloy plating solution, brightening agent 10-20 ml/l alloy plating solution and bismuth salt 0.25-5 g/l alloy plating solution. Said invention also provides its preparation method, including the following steps: placing SnSO4 or SnCl2 in the water whose pH is 0.5-1 under the condition of stirring, adding the obtained solution into the complexing agent white stirring, standingstill, adding active carbon, adding stabilizing agent, stir-adding bismuth salt, regulating pH to 4-5, adding brightening agent under the condition of stirring, adding weater to 1000 ml.

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Номер записи: 5
02-06-2010 дата публикации

Measuring butt point method for measuring base plate size in base plate technology

Номер: CN0101262741B
Автор: FENG XIANGMING, XIANGMING FENG
Принадлежит:

The invention relates to a target measuring method formed in the base plate technique for measuring the size of a base plate. Firstly, a board is provided, which comprises a base layer and a conductive layer, and the conductive layer is arranged on a surface of the base layer in a matching way. Secondly, at least one through hole is formed on the board so as to act as a measuring target for measuring the size of the base plate. Then, a plated through hole is formed in the through hole so as to act as a measuring target for measuring the size of the base plate for another time. After the abovesteps, a pattern dielectric layer is formed on the board, and the pattern dielectric layer is exposed outside the plated through hole so as to act as a measuring target for measuring the size of the base plate for the next time. The method can form a measuring target in the base plate technique and can carry out real-time measurement to the size of a base plate, thereby requiring no additional manufacture ...

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Номер записи: 6
18-12-2002 дата публикации

Stabilizer for plating tin-bismuth alloy and preparation method thereof

Номер: CN0001385556A
Автор: ZUO ZHENGZHONG, FENG XIANGMING, LI WEIDONG, ZHENGZHONG ZUO, XIANGMING FENG, WEIDONG LI
Принадлежит:

The basic composition of stabilizing agent for electroplating tio-bismuth alloy includes polyglycol 2-8g/l aqueous solution, vitamin C 2-6g/l aqeous solution and sodium subphosphite 10-30 g/l aqueoussolution and its preparation method includes the following steps: dissolving sodium subphosphite in water, under the condition of stirring adding vitamin C; dissolving polyglycol in hot water, then cooling to room temp.; under the condition of stirring adding the polyglycol solution into the solution containing sodium subphosphite and vitamin so as to obtain the invented stabilizing agent for electroplating tin-bismuth alloy. Said stabilizing agent can remove and reduce free oxygen in the solution, can prevent Sn(2+) from being oxidized into Sn (4+), and the oxidized component in the stabilizing agent, for example vitamin C can be reduced on the cathode.

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Номер записи: 7
13-11-2002 дата публикации

Complexing agent for electroplating Sn-Bi alloy and its preparing process

Номер: CN0001379123A
Автор: ZUO ZHENGZHONG, LI WEIDONG, FENG XIANGMING, ZHENGZHONG ZUO, WEIDONG LI, XIANGMING FENG
Принадлежит:

A complexing agent for electroplating Sn-Bi alloy is prepared from Na3C6H7O5.2H2O 120-180 g/l aqueous solution, Na2EDTA 30-60 g/l aqueous solution, H3BO3 30-45 g/l aqueous solution and NH4Cl 30-100 g/l aqueous solution through dissolving H3BO3 in hot water, cooling and mixing with others. It can inhibit the hydrolosis of Sn ions, so increasing the stability of electroplating liquid.

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Номер записи: 8
07-05-2014 дата публикации

Phosphorus-containing crosslinked gel polymer electrolyte and on-site thermal-polymerization preparation method and application thereof

Номер: CN103772607A
Автор: ZHENG JINYUN, FENG XIANGMING, ZHEN XIAOMIN, LI XIAO, ZHAO YUFEN
Принадлежит:

The invention belongs to the technical field of gel polymer electrolytes and particularly discloses a phosphorus-containing crosslinked gel polymer electrolyte and an on-site thermal-polymerization preparation method and application thereof. The preparation method comprises the steps of preparing the following raw materials, of which the total weight percent is 100%: 5-15% of polymerization monomers, 3-10% of crosslinker, 0.01-1.0% of thermal initiator and 75-90% of lithium-ion battery liquid electrolyte, uniformly mixing, and then, reacting for 20-100 minutes at the temperature of 75-150 DEG C under the protection of inert gas, thereby obtaining the phosphorus-containing crosslinked gel polymer electrolyte. The invention further discloses application of the phosphorus-containing crosslinked gel polymer electrolyte in the preparation of solid lithium-ion batteries. The invention provides novel phosphates and/or phosphonates, containing double bonds, which serve as monomers of the gel polymer ...

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Номер записи: 9
18-05-2011 дата публикации

Quad flat non-lead package and manufacturing method thereof

Номер: CN0102064144A
Автор: GUANGXIONG CHEN, SHENGMIN WANG, XIANGMING FENG, YUYING LI, MEILIN XIE, CHEN GUANGXIONG, WANG SHENGMIN, FENG XIANGMING, LI YUYING, XIE MEILIN
Принадлежит:

The invention discloses a quad flat non-lead package and a manufacturing method thereof. The quad flat non-lead package comprises a lead frame, a chip, a package colloid and a protective layer. The lead frame comprises a plurality of leads with each including a lower surface which is divided into a contact region and a noncontact region. The chip is configured on the lead frame and is electrically connected with the lead frame. The package colloid comprises the chip and the leads and is filled between the leads. The package colloid is exposed to the contact region and the noncontact region of each lead. And the protective layer covers the noncontact region of each lead.

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Номер записи: 10
10-09-2008 дата публикации

Measuring butt point method for measuring base plate size in base plate technology

Номер: CN0101262741A
Автор: FENG XIANGMING, XIANGMING FENG
Принадлежит:

The invention relates to a target measuring method formed in the base plate technique for measuring the size of a base plate. Firstly, a board is provided, which comprises a base layer and a conductive layer, and the conductive layer is arranged on a surface of the base layer in a matching way. Secondly, at least one through hole is formed on the board so as to act as a measuring target for measuring the size of the base plate. Then, a plated through hole is formed in the through hole so as to act as a measuring target for measuring the size of the base plate for another time. After the above steps, a pattern dielectric layer is formed on the board, and the pattern dielectric layer is exposed outside the plated through hole so as to act as a measuring target for measuring the size of the base plate for the next time. The method can form a measuring target in the base plate technique and can carry out real-time measurement to the size of a base plate, thereby requiring no additional manufacture ...

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Номер записи: 11
23-02-2005 дата публикации

Chargeable lithium battery electrode with positive temperature coefficient resistance effect and battery thereof

Номер: CN0001585157A
Автор: YANG HANXI, FENG XIANGMING, AI XINPING, HANXI YANG, XIANGMING FENG, XINPING AI
Принадлежит:

The electrode of the lithium battery is composed of the collective body of the conducting current, the electric active layer, the resistance layer with positive temperature coefficient. Between the collective body of the conducting current and the electric layer, the resistance layer with positive temperature coefficient is set, which is mainly comprised of the conducting particle and epoxy resin, which supplies a protecting measure for the lithium battery to meet the safety requirement.

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Номер записи: 12
23-06-2023 дата публикации

Voltage-controlled oscillator with wide tuning range and low phase noise

Номер: CN116317954A
Автор: SONG MINGYU, QU MING, ZHAI YUE, FENG XIANGMING, WEI HONGTAO, WANG HAIDONG, GONG LILIN
Принадлежит:

The invention discloses a voltage-controlled oscillator with a wide tuning range and low phase noise, and belongs to the technical field of integrated circuits. Wherein the resonance circuit is used for generating an oscillation signal of the voltage-controlled oscillator; the resonant circuit is a capacitance-inductance resonant circuit and is composed of an inductor, a variable capacitor array and a switched capacitor array; wherein the switched capacitor array and the variable capacitor array enlarge the tuning range of the circuit; the negative resistance circuit is used for generating negative resistance and counteracting positive resistance generated by the resonance circuit; the noise reduction module is used for suppressing phase noise of the voltage-controlled oscillator; wherein the LC filter circuit is used for filtering second harmonics, and the capacitance feedback is used for increasing the feedback coefficient from the resonant cavity to the MOS tube and reducing the phase ...

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Номер записи: 13