22-08-2023 дата публикации
Номер: CN116631955A
Принадлежит:
The invention discloses a millimeter wave solid-state power amplifier low-loss high-heat-dissipation packaging structure and method, the millimeter wave solid-state power amplifier low-loss high-heat-dissipation packaging structure comprises a power amplifier chip and a packaging structure main body, the power amplifier chip is installed on a heat sink area of the packaging structure main body, the heat sink area is made of a graphite/copper composite material, and the content of graphite is 55%-65%. According to the invention, the heat sink of the power amplifier chip and the packaging box body are manufactured into a whole when the packaging material is manufactured, and the power amplifier chip is directly assembled in the heat sink area of the packaging body, so that one-stage transition is reduced. Therefore, an interface generated when the power amplifier chip heat sink and the assembly packaging box body are assembled is eliminated. The heat dissipation efficiency of the heat dissipation ...
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