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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 37. Отображено 35.
22-06-2017 дата публикации

SPAD ARRAY WITH PIXEL-LEVEL BIAS CONTROL

Номер: US20170179173A1
Автор: Shingo Mandai, Gennadiy A. Agranov, Matthew C. Waldon, MANDAI SHINGO, AGRANOV GENNADIY A, WALDON MATTHEW C, Mandai Shingo, Agranov Gennadiy A., Waldon Matthew C.
Принадлежит:

A sensing device includes an array of sensing elements. Each sensing element includes a photodiode, including a p-n junction, and a local biasing circuit, coupled to reverse-bias the p-n junction at a bias voltage greater than a breakdown voltage of the p-n junction by a margin sufficient so that a single photon incident on the p-n junction triggers an avalanche pulse output from the sensing element. A bias control circuit is coupled to set the bias voltage in different ones of the sensing elements to different, respective values that are greater than the breakdown voltage. 1. A sensing device , comprising: a photodiode, comprising a p-n junction; and', 'a local biasing circuit, coupled to reverse-bias the p-n junction at a bias voltage greater than a breakdown voltage of the p-n junction by a margin sufficient so that a single photon incident on the p-n junction triggers an avalanche pulse output from the sensing element; and, 'an array of sensing elements, each sensing element comprisinga bias control circuit, which is coupled to set the bias voltage in different ones of the sensing elements to different, respective values that are greater than the breakdown voltage.2. The device according to claim 1 , and comprising a global bias generator claim 1 , which is coupled to apply a global bias voltage to all of the sensing elements in the array claim 1 , wherein the local biasing circuit in each sensing element is configured to apply an excess bias such that the bias voltage across each p-n junction is a sum of the global bias voltage and the excess bias.3. The device according to claim 2 , wherein each sensing element comprises a quenching circuit claim 2 , and wherein the photodiode claim 2 , the local biasing circuit and the quenching circuit in each sensing element are coupled together in series.4. The device according to claim 1 , wherein the local biasing circuit comprises a voltage adder claim 1 , which is coupled to a plurality of voltage lines claim 1 , ...

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Номер записи: 1
23-02-2017 дата публикации

SPAD array with gated histogram construction

Номер: US20170052065A1
Автор: Anup K. Sharma, Arnaud Laflaquière, Gennadiy A. Agranov, Gershon Rosenblum, Shingo Mandai, SHARMA ANUP K, LAFLAQUIÈRE ARNAUD, AGRANOV GENNADIY A, ROSENBLUM GERSHON, MANDAI SHINGO, Sharma Anup K., Laflaquière Arnaud, Agranov Gennadiy A., Rosenblum Gershon, Mandai Shingo
Принадлежит:

A sensing device includes a first array of sensing elements, which output a signal indicative of a time of incidence of a single photon on the sensing element. A second array of processing circuits are coupled respectively to the sensing elements and comprise a gating generator, which variably sets a start time of the gating interval for each sensing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each sensing element in each acquisition period. A controller controls the gating generator during a first sequence of the acquisition periods so as to sweep the gating interval over the acquisition periods and to identify a respective detection window for the sensing element, and during a second sequence of the acquisition periods, to fix the gating interval for each sensing element to coincide with the respective detection window. 1. A sensing device , comprising:a first array of sensing elements, each sensing element configured to output a signal indicative of a time of incidence of a single photon on the sensing element during a certain gating interval in each of a succession acquisition periods; and a gating generator, which is configured to variably set a start time of the gating interval for each sensing element within each acquisition period;', 'a memory, which is coupled to record the time of incidence of the single photon on each sensing element in each acquisition period, responsively to the signal; and', 'a controller, which is configured to control the gating generator during a first sequence of the acquisition periods so as to sweep the gating interval over the acquisition periods and to identify,, 'a second array of processing circuits, which are coupled respectively to the sensing elements and compriseresponsively to the signal from each sensing element during the first sequence of the acquisition periods, a respective detection window for the sensing element, and during a second sequence of ...

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Номер записи: 2
20-06-2017 дата публикации

Pixel binning in an image sensor

Номер: US0009686485B2
Автор: Gennadiy A. Agranov, Claus Molgaard, Ashirwad Bahukhandi, Chiajen Lee, Xiangli Li, AGRANOV GENNADIY A, MOLGAARD CLAUS, BAHUKHANDI ASHIRWAD, LEE CHIAJEN, LI XIANGLI, Agranov Gennadiy A., Molgaard Claus, Bahukhandi Ashirwad, Lee Chiajen, Li Xiangli
Принадлежит: Apple Inc., APPLE INC

Pixel binning is performed by summing charge from some pixels positioned diagonally in a pixel array. Pixel signals output from pixels positioned diagonally in the pixel array may be combined on the output lines. A signal representing summed charge produces a binned 2×1 cluster. A signal representing combined voltage signals produces a binned 2×1 cluster. A signal representing summed charge and a signal representing combined pixel signals can be combined digitally to produce a binned 2×2 pixel. Orthogonal binning may be performed on other pixels in the pixel array by summing charge on respective common sense regions and then then combining the voltage signals that represent the summed charge on respective output lines.

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Номер записи: 3
23-01-2020 дата публикации

Image Flare Detection Using Asymmetric Pixels

Номер: US20200029035A1
Автор: Agranov Gennadiy A., Li Xiangli, Rosenblum Gershon
Принадлежит:

A method for processing an image includes obtaining a set of pixel values captured from a pixel array during an image capture frame. The set of pixel values includes pixel values for a set of asymmetric pixels having different directional asymmetries. The method further includes detecting, using the pixel values for at least the asymmetric pixels and the different directional asymmetries of the asymmetric pixels, a directionality of image flare; and processing an image defined by the set of pixel values in accordance with the detected directionality of image flare. In some embodiments, image flare may be distinguished from noise using the set of pixel values. 1. A method for processing an image , comprising:obtaining a set of pixel values captured from a pixel array during an image capture frame, the set of pixel values including pixel values for a set of asymmetric pixels having different directional asymmetries;detecting, using the pixel values for at least the asymmetric pixels and the different directional asymmetries of the asymmetric pixels, a directionality of image flare; andprocessing an image defined by the set of pixel values in accordance with the detected directionality of image flare.2. The method of claim 1 , further comprising:evaluating the pixel values for at least the set of asymmetric pixels to identify a region of the pixel array affected by the detected directionality of image flare; wherein,the processing of the image in accordance with the detected directionality of image flare is concentrated on the identified region.3. The method of claim 2 , wherein the directionality of image flare is a first directionality of image flare claim 2 , the method further comprising:detecting, using the pixel values for at least the asymmetric pixels and the different directional asymmetries of the asymmetric pixels, a second directionality of image flare;evaluating the pixel values for at least the set of asymmetric pixels to identify a second region of the ...

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Номер записи: 4
08-02-2018 дата публикации

Controlling lens misalignment in an imaging system

Номер: US20180041755A1
Автор: Douglas J. Fettig, Gennadiy A. Agranov, Gershon Rosenblum
Принадлежит: Apple Inc

An imaging method includes imaging a scene using an imaging system, which includes an array of radiation sensing elements, including first sensing elements with symmetrical angular responses and second sensing elements with asymmetrical angular responses, interspersed among the first sensing elements, and optics configured to focus radiation from the scene onto the array. The method further includes processing first signals output by the first sensing elements in order to identify one or more areas of uniform irradiance on the array, and processing second signals output by the second sensing elements that are located in the identified areas, in order to detect a misalignment of the optics with the array.

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Номер записи: 5
15-02-2018 дата публикации

ELECTRONIC DEVICE INCLUDING PIN HOLE ARRAY MASK ABOVE OPTICAL IMAGE SENSOR AND RELATED METHODS

Номер: US20180046837A1
Автор: Agranov Gennadiy A., Gozzini Giovanni, King Brian M., Rosenblum Gershon, YEKE YAZDANDOOST Mohammad
Принадлежит:

An electronic device may include an optical image sensor and a pin hole array mask layer above the optical image sensor. The electronic device may also include a display layer above the pin hole array mask layer that includes spaced apart display pixels, and a transparent cover layer above the display layer defining a finger placement surface capable of receiving a finger adjacent thereto. 1. An electronic device comprising:an optical image sensor;a pin hole array mask layer above the optical image sensor;a display layer above the pin hole array mask layer comprising a plurality of spaced apart display pixels; anda transparent cover layer above the display layer defining a finger placement surface capable of receiving a finger adjacent thereto.2. The electronic device of further comprising a light source capable of directing light into the finger when adjacent the transparent cover layer.3. The electronic device of wherein the light source comprises at least one of visible light source claim 2 , infrared light source claim 2 , and an ultraviolet light source.4. The electronic device of wherein the optical image sensor claim 1 , pin hole array mask layer claim 1 , and finger placement surface are configured to define overlapping areas at the finger placement surface claim 1 , and spaced apart areas at the optical image sensor.5. The electronic device of wherein the pin hole array mask layer has a plurality of openings each having a size in a range of 5-40 microns.6. The electronic device of wherein the pin hole array mask layer has a plurality of openings spaced from one another by a distance in a range of 1-3 millimeters.7. The electronic device of wherein the pin hole array mask layer is spaced from the optical image sensor by a distance in a range of 100-300 microns.8. The electronic device of wherein the pin hole array mask layer is spaced from the finger placement surface by a distance in a range of 1500-2000 microns.9. The electronic device of wherein the pin ...

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Номер записи: 6
22-03-2018 дата публикации

LiDAR with irregular pulse sequence

Номер: US20180081041A1
Автор: Agranov Gennadiy A., Niclass Cristiano L., Oggier Thierry, Shpunt Alexander
Принадлежит:

Depth-sensing apparatus includes a laser, which is configured to emit pulses of optical radiation toward a scene, and one or more detectors, which are configured to receive the optical radiation that is reflected from points in the scene and to output signals indicative of respective times of arrival of the received radiation. Control and processing circuitry is coupled to drive the laser to emit a sequence of the pulses in a predefined temporal pattern that specifies irregular intervals between the pulses in the sequence, and to correlate the output signals with the temporal pattern in order to find respective times of flight for the points in the scene. 2. The apparatus according to claim 1 , wherein the one or more detectors comprise one or more avalanche photodiodes.3. The apparatus according to claim 2 , wherein the one or more avalanche photodiodes comprise an array of single-photon avalanche photodiodes (SPADs).4. The apparatus according to claim 1 , wherein the temporal pattern comprises a pseudo-random pattern.5. The apparatus according to claim 1 , and comprising a scanner claim 1 , which is configured to scan the pulses of optical radiation over the scene claim 1 , wherein the controller is configured to drive the laser to emit the pulses in different claim 1 , predefined temporal patterns toward different points in the scene.6. The apparatus according to claim 5 , wherein the one or more detectors comprise an array of detectors claim 5 , and wherein the apparatus comprises objective optics claim 5 , which are configured to focus a locus in the scene that is illuminated by each of the pulses onto a region of the array containing multiple detectors.7. The apparatus according to claim 6 , wherein the control and processing circuitry is configured to sum the output signals over the region in order to find the times of flight.8. (canceled)9. The apparatus according to claim 1 , wherein the controller is configured to construct a depth map of the scene based ...

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Номер записи: 7
29-03-2018 дата публикации

Stacked Backside Illuminated SPAD Array

Номер: US20180090526A1
Автор: Arnaud Laflaquière, Cristiano L. Niclass, Gennadiy A. Agranov, Nobuhiro Karasawa, Shingo Mandai, Xiaofeng Fan
Принадлежит: Apple Inc

A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

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Номер записи: 8
29-03-2018 дата публикации

Stacked Backside Illuminated SPAD Array

Номер: US20180090536A1
Автор: Agranov Gennadiy A., Fan Xiaofeng, Karasawa Nobuhiro, LAFLAQUIERE Arnaud, Mandai Shingo, Niclass Cristiano L.
Принадлежит:

A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions. 1. A back-illuminated single-photon avalanche diode (SPAD) image sensor , comprising: [ an anode gradient layer comprising a first dopant type;', 'a cathode region positioned adjacent to a front surface of the SPAD region and comprising a second dopant type; and', 'an anode avalanche layer positioned over the cathode region and comprising the first dopant type;, 'an SPAD region, comprising, the cathode region has a first area and the anode avalanche layer has a second area that is less than the first area; and', 'a dopant concentration of the first dopant type in the anode gradient layer is higher at a back surface of the sensor wafer and lower at a front surface of the anode gradient layer to produce a dopant concentration gradient in the anode gradient layer that guides a photon-generated charge carrier through the anode gradient layer to the anode avalanche layer; and, 'wherein], 'a sensor wafer, comprisinga circuit wafer positioned below and attached to the sensor wafer.2. The back-illuminated SPAD image sensor of claim 1 , wherein the circuit wafer comprises:a voltage supply coupled to the SPAD region through a first inter-wafer connector; andan output circuit coupled to the cathode region through a second inter-wafer connector;wherein the voltage supply is configured to supply a high voltage to the SPAD region to provide a reverse bias across the cathode ...

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Номер записи: 9
19-04-2018 дата публикации

Pixel Binning in an Image Sensor

Номер: US20180109742A1
Автор: Agranov Gennadiy A., Bahukhandi Ashirwad, Lee Chiajen, Li Xiangli, Molgaard Claus
Принадлежит:

Pixel binning is performed by summing charge from some pixels positioned diagonally in a pixel array. Pixel signals output from pixels positioned diagonally in the pixel array may be combined on the output lines. A signal representing summed charge produces a binned 2×1 cluster. A signal representing combined voltage signals produces a binned 2×1 cluster. A signal representing summed charge and a signal representing combined pixel signals can be combined digitally to produce a binned 2×2 pixel. Orthogonal binning may be performed on other pixels in the pixel array by summing charge on respective common sense regions and then combining the voltage signals that represent the summed charge on respective output lines. 126-. (canceled)27. A method for binning charge in an image sensor having a pixel array that includes a plurality of pixels , the method comprising:producing a first diagonal summed signal by summing charge in a first set of pixels positioned along a first diagonal direction and reading the first diagonal summed signal out of the pixel array;producing a second diagonal summed signal by combining voltage signals read out of a second set of pixels positioned along a second diagonal direction and reading the second diagonal summed signal out of the pixel array; andproducing an orthogonal summed signal by summing charge in a third set of pixels positioned along a first orthogonal direction.28. The method of claim 27 , wherein the first set of pixels includes pixels associated with a first green color plane and a second green color plane in a first Bayer color filter array.29. The method of claim 28 , wherein:the second set of pixels includes a first pixel associated with the first green color plane in a second Bayer color filter array and a second pixel associated with the second green color plane in a third Bayer color filter array.30. The method of claim 27 , wherein the second diagonal direction is a different diagonal direction than the first diagonal ...

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Номер записи: 10
21-05-2020 дата публикации

Imaging system with synchronized scan and sensing

Номер: US20200158831A1
Автор: Agranov Gennadiy A., Niclass Cristiano L., Oggier Thierry, Rezk Mina A., Shpunt Alexander, Waldon Matthew C.
Принадлежит:

An electro-optical device includes a laser light source, which is configured to emit at least one beam of light. A beam steering device is configured to transmit and scan the at least one beam across a target scene. In an array of sensing elements, each sensing element is configured to output a signal indicative of incidence of photons on the sensing element. Light collection optics are configured to image the target scene scanned by the transmitted beam onto the array, wherein the beam steering device scans the at least one beam across the target scene with a spot size and scan resolution that are smaller than a pitch of the sensing elements. Circuitry is coupled to actuate the sensing elements only in a selected region of the array and to sweep the selected region over the array in synchronization with scanning of the at least one beam. 1. An electro-optical device , comprising:a laser light source, which is configured to emit at least one beam of light;a beam steering device configured to transmit and scan the at least one beam across a target scene;an array of sensing elements, each sensing element configured to output a signal indicative of incidence of photons on the sensing element;light collection optics configured to image the target scene scanned by the transmitted beam onto the array,wherein the beam steering device scans the at least one beam across the target scene with a spot size and scan resolution that are smaller than a pitch of the sensing elements; andcircuitry coupled to actuate the sensing elements only in a selected region of the array and to sweep the selected region over the array in synchronization with scanning of the at least one beam.2. The device according to claim 1 , wherein the circuitry is configured to select the region such that at any instant during the scan claim 1 , the selected region contains a part of the array onto which the light collection optics image an area of the target scene that is illuminated by the at least one ...

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Номер записи: 11
21-05-2020 дата публикации

SPAD array with gated histogram construction

Номер: US20200158837A1
Автор: Agranov Gennadiy A., LAFLAQUIERE Arnaud, Mandai Shingo, Rosenblum Gershon, Sharma Anup K.
Принадлежит:

A sensing device includes a first array of sensing elements, which output a signal indicative of a time of incidence of a single photon on the sensing element. A second array of processing circuits are coupled respectively to the sensing elements and comprise a gating generator, which variably sets a start time of the gating interval for each sensing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each sensing element in each acquisition period. A controller sets, in each of at least some of the acquisition periods, different, respective gating intervals for different ones of the sensing elements. 1. A sensing device , comprising:a first array of sensing elements, each sensing element configured to output a signal indicative of a time of incidence of a single photon on the sensing element during a certain gating interval in each of a succession acquisition periods; and a gating generator, which is configured to variably set a start time of the gating interval for each sensing element within each acquisition period;', 'a memory, which is coupled to record the time of incidence of the single photon on each sensing element in each acquisition period, responsively to the signal; and', 'a controller, which is configured to set, in each of at least some of the acquisition periods, different, respective gating intervals for different ones of the sensing elements., 'a second array of processing circuits, which are coupled respectively to the sensing elements and comprise2. The device according to claim 1 , and comprising a radiation source claim 1 , which is configured to direct a train of pulses of radiation claim 1 , synchronized with the acquisition periods claim 1 , toward a scene claim 1 ,wherein the sensing elements are configured to detect photons of the radiation reflected from the scene, and wherein the processing circuits are configured to measure times of flight of the photons.3. The device ...

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Номер записи: 12
22-06-2017 дата публикации

Light detection and ranging sensor

Номер: US20170176579A1
Автор: Agranov Gennadiy A., Niclass Cristiano L., Oggier Thierry, Rezk Mina A., Shpunt Alexander, Waldon Matthew C.
Принадлежит:

An electro-optical device includes a laser light source, which emits at least one beam of light pulses, a beam steering device, which transmits and scans the at least one beam across a target scene, and an array of sensing elements. Each sensing element outputs a signal indicative of a time of incidence of a single photon on the sensing element. Light collection optics image the target scene scanned by the transmitted beam onto the array. Circuitry is coupled to actuate the sensing elements only in a selected region of the array and to sweep the selected region over the array in synchronization with scanning of the at least one beam. 1. An electro-optical device , comprising:a laser light source, which is configured to emit at least one beam of light pulses;a beam steering device configured to transmit and scan the at least one beam across a target scene;an array of sensing elements, each sensing element configured to output a signal indicative of a time of incidence of a single photon on the sensing element;light collection optics configured to image the target scene scanned by the transmitted beam onto the array; andcircuitry coupled to actuate the sensing elements only in a selected region of the array and to sweep the selected region over the array in synchronization with scanning of the at least one beam.2. The device according to claim 1 , wherein the circuitry is configured to select the region such that at any instant during the scan claim 1 , the selected region contains a part of the array onto which the light collection optics image an area of the target scene that is illuminated by the at least one beam.3. The device according to claim 2 , wherein the selected region comprises one sensing element.4. The device according to claim 2 , wherein the selected region comprises multiple sensing elements.5. The device according to claim 1 , wherein the circuitry is configured to process signals output by the sensing elements in order to determine respective ...

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Номер записи: 13
10-09-2020 дата публикации

Back-Illuminated Single-Photon Avalanche Diode

Номер: US20200286946A1
Автор: Agranov Gennadiy A., Fan Xiaofeng, Karasawa Nobuhiro, LAFLAQUIERE Arnaud, Mandai Shingo, Niclass Cristiano L.
Принадлежит:

A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions. 1. A back-illuminated single-photon avalanche diode (SPAD) , comprising: a SPAD region configured to receive photons of light entering through the back surface of the sensor wafer;', 'a deep trench isolation (DTI) region surrounding the SPAD region and extending from the front surface to the back surface of the sensor wafer; and', 'a passivation layer extending between the DTI region and the SPAD region., 'a sensor wafer having a back surface opposite a front surface, the sensor wafer comprising2. The back-illuminated SPAD of claim 1 , wherein: an anode region; and', 'a cathode region adjacent the front surface of the sensor wafer., 'the SPAD region comprises3. The back-illuminated SPAD of claim 2 , wherein:the anode region comprises an anode gradient layer; andthe passivation layer and the anode gradient layer have a same doping.4. The back-illuminated SPAD of claim 1 , further comprising:a light shield disposed on the back surface of the sensor wafer, over the DTI region.5. The back-illuminated SPAD of claim 1 , further comprising:a light reflector disposed adjacent the front surface of the sensor wafer, under at least a portion of the SPAD region, and configured to reflect photons of light that have passed through the SPAD region back toward the SPAD region.6. The back-illuminated SPAD of claim 1 , further comprising:a lateral shield disposed adjacent the ...

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Номер записи: 14
24-09-2020 дата публикации

Hybrid image sensors with improved charge injection efficiency

Номер: US20200304743A1
Автор: Agranov Gennadiy A, Cellek Oray O., Chen Qingfei, Li Xiangli
Принадлежит:

Imaging apparatus () includes a photosensitive medium () and a bias electrode (), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits () is formed on a semiconductor substrate (). Each pixel circuit includes a pixel electrode () coupled to collect the charge carriers from the photosensitive medium; a readout circuit () configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate () coupled between the pixel electrode and the readout circuit; and a shutter gate () coupled in parallel with the skimming gate between a node () in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit. 1. Imaging apparatus , comprising:a photosensitive medium configured to convert incident photons into charge carriers;a bias electrode, which is at least partially transparent, overlying the photosensitive medium and configured to apply a bias potential to the photosensitive medium; a pixel electrode coupled to collect the charge carriers from the photosensitive medium;', 'a readout circuit configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode;', 'a skimming gate coupled between the pixel electrode and the readout circuit; and', 'a shutter gate coupled in parallel with the skimming gate between a node in the pixel circuit and a sink site; and, 'an array of pixel circuits formed on a semiconductor substrate, each pixel circuit defining a respective pixel and comprisingcontrol circuitry coupled to sequentially open and close the shutter gate and the skimming gate of each of the pixels in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected ...

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Номер записи: 15
15-11-2018 дата публикации

Hybrid image sensors with Improved charge injection efficiency

Номер: US20180331138A1
Автор: Gennadiy A. Agranov, Oray O. CELLEK, Qingfei Chen, Xiangli Li
Принадлежит: Apple Inc

Imaging apparatus includes a photosensitive medium and a bias electrode, which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits is formed on a semiconductor substrate. Each pixel circuit includes a pixel electrode coupled to collect the charge carriers from the photosensitive medium; a readout circuit configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate coupled between the pixel electrode and the readout circuit; and a shutter gate coupled in parallel with the skimming gate between a node in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

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Номер записи: 16
03-12-2015 дата публикации

Pixel binning in an image sensor

Номер: US20150350575A1
Автор: Ashirwad Bahukhandi, Chiajen Lee, Claus Molgaard, Gennadiy A. Agranov, Xiangli Li
Принадлежит: Apple Inc

Pixel binning is performed by summing charge from some pixels positioned diagonally in a pixel array. Pixel signals output from pixels positioned diagonally in the pixel array may be combined on the output lines. A signal representing summed charge produces a binned 2×1 cluster. A signal representing combined voltage signals produces a binned 2×1 cluster. A signal representing summed charge and a signal representing combined pixel signals can be combined digitally to produce a binned 2×2 pixel. Orthogonal binning may be performed on other pixels in the pixel array by summing charge on respective common sense regions and then then combining the voltage signals that represent the summed charge on respective output lines.

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Номер записи: 17
29-11-2018 дата публикации

Multi-range time of flight sensing

Номер: US20180341009A1
Автор: Alexander Shpunt, Cristiano L. Niclass, Gennadiy A. Agranov, Matthew C. Waldon, Mina A. Rezk, Thierry Oggier
Принадлежит: Apple Inc

An electro-optical device includes at least one laser light source and a beam steering device, which transmits and scan the at least one beam across a target scene. One or more sensing elements output a signal indicative of a time of incidence of a single photon on the sensing element from the target scene. Circuitry processes the signal in order to determine respective distances to points in the scene and controls the light source to emit the beam at the low level during a first scan, to identify, based on the first scan, the points in the scene that are located at respective distances from the device that are greater than a predefined threshold distance, and to control the laser light source during a second scan to emit the beam at the high level while the beam steering device directs the beam toward the identified points.

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Номер записи: 18
31-12-2020 дата публикации

Stacked Electromagnetic Radiation Sensors for Visible Image Sensing and Infrared Depth Sensing, or for Visible Image Sensing and Infrared Image Sensing

Номер: US20200412980A1
Автор: Agranov Gennadiy A., Beiley Zachary M., Buettgen Bernhard, Cellek Oray O., Fan Xiaofeng, Li Xiangli, Mandelli Emanuele, Pattantyus-Abraham Andras G., Rosenblum Gershon, Shao Yuchuan
Принадлежит:

A sensor stack is described. The sensor stack includes first and second electromagnetic radiation sensors. The first electromagnetic radiation sensor has a high quantum efficiency for converting a first range of electromagnetic radiation wavelengths into a first set of electrical signals. The second electromagnetic radiation sensor is positioned in a field of view of the first electromagnetic radiation sensor and has a high quantum efficiency for converting a second range of electromagnetic radiation wavelengths into a second set of electrical signals and a low quantum efficiency for converting the first range of electromagnetic radiation wavelengths into the second set of electrical signals. The first range of wavelengths does not overlap the second range of wavelengths, and the second electromagnetic radiation sensor is at least partially transmissive to the first range of electromagnetic radiation wavelengths. 1. A sensor stack , comprising:a first electromagnetic radiation sensor having a high quantum efficiency for converting a first range of electromagnetic radiation wavelengths into a first set of electrical signals; and a high quantum efficiency for converting a second range of electromagnetic radiation wavelengths into a second set of electrical signals; and', 'a low quantum efficiency for converting the first range of electromagnetic radiation wavelengths into the second set of electrical signals; wherein:, 'a second electromagnetic radiation sensor, positioned in a field of view of the first electromagnetic radiation sensor and having,'}the first range of electromagnetic radiation wavelengths does not overlap the second range of electromagnetic radiation wavelengths; andthe second electromagnetic radiation sensor is at least partially transmissive to the first range of electromagnetic radiation wavelengths.2. The sensor stack of claim 1 , wherein: a semiconductor substrate comprising pixel circuitry for an array of pixels;', 'a photosensitive material ...

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Номер записи: 19
18-08-2009 дата публикации

Backside silicon wafer design reducing image artifacts from infrared radiation

Номер: US7576361B2
Автор: Gennadiy A. Agranov, Igor Karasev
Принадлежит: Aptina Imaging Corp

Imaging devices having reduced image artifacts are disclosed. The image artifacts in the imaging devices are reduced by redirecting, absorbing or scattering IR radiation that passes through the imaging device substrate away from dark pixels.

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Номер записи: 20
14-04-2020 дата публикации

SPAD array with gated histogram construction

Номер: US10620300B2
Автор: Anup K. Sharma, Arnaud Laflaquière, Gennadiy A. Agranov, Gershon Rosenblum, Shingo Mandai
Принадлежит: Apple Inc

A sensing device includes a first array of sensing elements, which output a signal indicative of a time of incidence of a single photon on the sensing element. A second array of processing circuits are coupled respectively to the sensing elements and comprise a gating generator, which variably sets a start time of the gating interval for each sensing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each sensing element in each acquisition period. A controller controls the gating generator during a first sequence of the acquisition periods so as to sweep the gating interval over the acquisition periods and to identify a respective detection window for the sensing element, and during a second sequence of the acquisition periods, to fix the gating interval for each sensing element to coincide with the respective detection window.

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Номер записи: 21
08-10-2019 дата публикации

Stacked backside illuminated SPAD array

Номер: US10438987B2
Автор: Arnaud Laflaquière, Cristiano L. Niclass, Gennadiy A. Agranov, Nobuhiro Karasawa, Shingo Mandai, Xiaofeng Fan
Принадлежит: Apple Inc

A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

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Номер записи: 22
27-11-2008 дата публикации

Imager and system utilizing pixel with internal reset control and method of operating same

Номер: US20080291310A1
Автор: Gennadiy A. Agranov, John Ladd
Принадлежит: Aptina Imaging Corp

A pixel having no dedicated reset control line. By using the voltage on the column line to control the gate of the reset transistor, there is no need to provide a dedicate reset control line.

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Номер записи: 23
29-06-2017 дата публикации

Light detection and ranging sensor

Номер: WO2017112416A1
Автор: Alexander Shpunt, Cristiano L. Niclass, Gennadiy A. Agranov, Matthew C. Waldon, Mina A. Rezk, Thierry Oggier
Принадлежит: Apple Inc.

An electro-optical device (18) includes a laser light source (20), which emits at least one beam of light pulses, a beam steering device (24), which transmits and scans the at least one beam across a target scene (22), and an array (28) of sensing elements (44). Each sensing element outputs a signal indicative of a time of incidence of a single photon on the sensing element. Light collection optics (27) image the target scene scanned by the transmitted beam onto the array. Circuitry (50) is coupled to actuate the sensing elements only in a selected region (70) of the array and to sweep the selected region over the array in synchronization with scanning of the at least one beam.

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Номер записи: 24
15-02-2007 дата публикации

Backside silicon wafer design reducing image artifacts from infrared radiation

Номер: WO2007019073A2
Автор: Gennadiy A. Agranov, Igor Karasev
Принадлежит: MICRON TECHNOLOGY, INC.

Imaging devices having reduced image artifacts are disclosed. The image artifacts in the imaging devices are reduced by redirecting, absorbing or scattering IR radiation that passes through the imaging device to avoid that light is reflected on the backside of the substrate and accumulates in dark pixels.

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Номер записи: 25
02-02-2010 дата публикации

Optimization of alignment between elements in an image sensor

Номер: US7655893B2
Автор: Eric R. Fossum, Gennadiy A. Agranov, Richard H. Tsai, Scott P. Campbell
Принадлежит: Aptina Imaging Corp

An image sensor is formed with shifts among the optical parts of the sensor and the photosensitive parts of the sensor. The optical parts of the sensor may include a color filter array and/or microlenses. The photosensitive part may include any photoreceptors such as a CMOS image sensor. The shifts allow images to be formed even when the light received at a given pixel location varies in angle of incidence as a function of pixel location within the array. The relative shifts among the pixel components may be, for example, plus or minus some fraction of the pixel pitch. The shift may be variable across the array or may be constant across the array and may be deterministically determined.

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Номер записи: 26
06-10-2020 дата публикации

Imaging system with synchronized scan and sensing

Номер: US10795001B2
Автор: Alexander Shpunt, Cristiano L. Niclass, Gennadiy A. Agranov, Matthew C. Waldon, Mina A. Rezk, Thierry Oggier
Принадлежит: Apple Inc

An electro-optical device includes a laser light source, which is configured to emit at least one beam of light. A beam steering device is configured to transmit and scan the at least one beam across a target scene. In an array of sensing elements, each sensing element is configured to output a signal indicative of incidence of photons on the sensing element. Light collection optics are configured to image the target scene scanned by the transmitted beam onto the array, wherein the beam steering device scans the at least one beam across the target scene with a spot size and scan resolution that are smaller than a pitch of the sensing elements. Circuitry is coupled to actuate the sensing elements only in a selected region of the array and to sweep the selected region over the array in synchronization with scanning of the at least one beam.

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Номер записи: 27
31-03-2020 дата публикации

Pixel binning in an image sensor

Номер: US10609348B2
Автор: Ashirwad Bahukhandi, Chiajen Lee, Claus Molgaard, Gennadiy A. Agranov, Xiangli Li
Принадлежит: Apple Inc

Pixel binning is performed by summing charge from some pixels positioned diagonally in a pixel array. Pixel signals output from pixels positioned diagonally in the pixel array may be combined on the output lines. A signal representing summed charge produces a binned 2×1 cluster. A signal representing combined voltage signals produces a binned 2×1 cluster. A signal representing summed charge and a signal representing combined pixel signals can be combined digitally to produce a binned 2×2 pixel. Orthogonal binning may be performed on other pixels in the pixel array by summing charge on respective common sense regions and then combining the voltage signals that represent the summed charge on respective output lines.

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Номер записи: 28
15-11-2018 дата публикации

Hybrid image sensors with improved charge injection efficiency

Номер: WO2018208386A1
Автор: Gennadiy A. Agranov, Oray O. CELLEK, Qingfei Chen, Xiangli Li
Принадлежит: Apple Inc.

Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

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Номер записи: 29
11-06-2008 дата публикации

Backside silicon wafer design reducing image artifacts from infrared radiation

Номер: EP1929527A2
Автор: Gennadiy A. Agranov, Igor Karasev
Принадлежит: Micron Technology Inc

Imaging devices having reduced image artifacts are disclosed. The image artifacts in the imaging devices are reduced by redirecting, absorbing or scattering IR radiation that passes through the imaging device to avoid that light is reflected on the backside of the substrate and accumulates in dark pixels.

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Номер записи: 30
23-07-2019 дата публикации

Electronic device including pin hole array mask above optical image sensor and related methods

Номер: US10360431B2
Автор: Brian M. King, Gennadiy A. Agranov, Gershon Rosenblum, Giovanni Gozzini, Mohammad YEKE YAZDANDOOST
Принадлежит: Apple Inc

An electronic device may include an optical image sensor and a pin hole array mask layer above the optical image sensor. The electronic device may also include a display layer above the pin hole array mask layer that includes spaced apart display pixels, and a transparent cover layer above the display layer defining a finger placement surface capable of receiving a finger adjacent thereto.

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Номер записи: 31
31-07-2019 дата публикации

Lidar with irregular pulse sequence

Номер: EP3516417A1
Автор: Alexander Shpunt, Cristiano L. Niclass, Gennadiy A. Agranov, Thierry Oggier
Принадлежит: Apple Inc

Depth-sensing apparatus (20) includes a laser (28), which is configured to emit pulses of optical radiation toward a scene, and one or more detectors (40), which are configured to receive the optical radiation that is reflected from points in the scene and to output signals indicative of respective times of arrival of the received radiation. Control and processing circuitry (44, 38) is coupled to drive the laser to emit a sequence of the pulses in a predefined temporal pattern that specifies irregular intervals between the pulses in the sequence, and to correlate the output signals with the temporal pattern in order to find respective times of flight for the points in the scene.

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Номер записи: 32
08-02-2018 дата публикации

Controlling lens misalignment in an imaging system

Номер: WO2018026443A1
Автор: Douglas J. Fettig, Gennadiy A. Agranov, Gershon Rosenblum
Принадлежит: Apple Inc.

An imaging method includes imaging a scene using an imaging system (20), which includes an array (24) of radiation sensing elements, including first sensing elements (40) with symmetrical angular responses and second sensing elements (46, 54, 60, 62) with asymmetrical angular responses, interspersed among the first sensing elements, and optics (22) configured to focus radiation from the scene onto the array. The method further includes processing first signals output by the first sensing elements in order to identify one or more areas of uniform irradiance on the array, and processing second signals output by the second sensing elements that are located in the identified areas, in order to detect a misalignment of the optics with the array.

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Номер записи: 33
17-12-2015 дата публикации

画像センサにおける画素ビニング

Номер: JP2015228650A
Автор: A Agranov Gennadiy, Bahukhandi Ashirwad, Chiajen Lee, Molgaard Claus, Xiangli Li, エイ アグラノフ ジェナディー, エイ アグラノフ ジェナディー, バフクハンディ アシンワッド, モルガード クラウス, リー シャンリ
Принадлежит: Apple Inc

【課題】ビニング画像の画質と空間分解能を高めることができる撮像システム及びビニング技術を提供する。 【解決手段】画素アレイ内の対角的に位置するいくつかの画素からの電荷を加算することによって画素ビニングを行う。画素アレイ内の対角的に位置する画素からの画素信号出力を出力線上で合成することができる。加算された電荷を表す信号は、ビニングされた２×１クラスタを生成する。合成された画素信号を表す信号は、ビニングされた２×１クラスタを生成する。これらの加算された電荷を表す信号と、合成された画素信号を表す信号とをデジタル的に合成して、ビニングされた２×２画素を生成することができる。画素アレイ内の他の画素に対しては、それぞれの共通検知領域上で電荷を加算した後に、加算された電荷を表す電圧信号をそれぞれの出力線上で合成することによって直交ビニングを行うことができる。 【選択図】図５

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Номер записи: 34
12-06-2018 дата публикации

Spad array with pixel-level bias control

Номер: US09997551B2
Автор: Gennadiy A. Agranov, Matthew C. Waldon, Shingo Mandai
Принадлежит: Apple Inc

A sensing device includes an array of sensing elements. Each sensing element includes a photodiode, including a p-n junction, and a local biasing circuit, coupled to reverse-bias the p-n junction at a bias voltage greater than a breakdown voltage of the p-n junction by a margin sufficient so that a single photon incident on the p-n junction triggers an avalanche pulse output from the sensing element. A bias control circuit is coupled to set the bias voltage in different ones of the sensing elements to different, respective values that are greater than the breakdown voltage.

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Номер записи: 35