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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 38. Отображено 38.
29-05-2017 дата публикации

SEMICONDUCTOR DEVICE INCLUDING BUMP AND FORMING METHOD THEREOF

Номер: KR1020170058680A
Принадлежит:

The present invention relates to a semiconductor device including a pillar bump. A conductive pad is formed on the substrate. A pillar is formed on the conductive pad. An intermetallic compound (IMC) layer is formed on the pillar. A solder layer is formed on the IMC layer. The pillar has a narrower width than the IMC layer. Accordingly, the present invention can provide the semiconductor device including the pillar bump with high reliability. COPYRIGHT KIPO 2017 ...

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07-10-2015 дата публикации

MULTI-WAVELENGTH SURFACE PLASMON LASER

Номер: KR1020150112657A
Принадлежит:

Disclosed is a multi-wavelength surface plasmon laser which can emit surface plasmon at a plurality of wavelengths at the same time. The multi-wavelength surface plasmon laser may include an active layer of which the thickness is changed according to the location thereof to generate light with different wavelengths according to the location, and a metal cavity of which the length is changed according to the position thereof. Light with different wavelengths generated from the active layer can generate the surface plasmon with different wavelengths on the interface of a metal layer and a semiconductor layer. The generated surface plasmon with different wavelengths is resonated by the metal cavity of which the length is changed according to the location thereof to be emitted to the outside. COPYRIGHT KIPO 2016 ...

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07-03-2016 дата публикации

SEMICONDUCTOR LASER RESONATOR AND SEMICONDUCTOR LASER DEVICE INCLUDING SAME

Номер: KR1020160024736A
Принадлежит:

Disclosed are a semiconductor laser resonator, which generates laser beam by absorbing energy from the outside, and a semiconductor laser device including the same. The disclosed semiconductor laser resonator capable of selecting or separating a resonance mode comprises a gain medium layer. The gain medium layer includes semiconductor materials, and includes a central portion, and a plurality of protrusions which are protruded from and disposed along the outer portion of the central portion in a periodic structure. Herein, the laser beam is confined in at least one of the protrusions as a standing wave. COPYRIGHT KIPO 2016 ...

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23-12-2015 дата публикации

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR DEVICE

Номер: KR1020150142901A
Принадлежит:

Disclosed is a semiconductor device, a manufacturing method for the same, and an electronic device including the semiconductor device. The disclosed semiconductor device may include a first transistor and a second transistor. The first transistor may include a first channel layer and a first ion gel, and the second transistor may include a second channel layer and a second ion gel. The first channel layer and the second channel layer may include, for example, a graphene. The first ion gel and the second ion gel may include ionic liquids different from each other. The first ion gel and the second ion gel may include cation and/or anion different from each other. One among the first transistor and the second transistor may be a p-type and the other may be a n-type. The first transistor and the second transistor may constitute an inverter. COPYRIGHT KIPO 2016 ...

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08-05-2015 дата публикации

DIRECTIONAL LIGHT EXTRACTION APPARATUS AND LIGHT INTER-CONNECTION SYSTEM INCLUDING SAME

Номер: KR1020150050093A
Принадлежит:

Disclosed are a directional light extraction apparatus and a light inter-connection system including the same. The disclosed directional light extraction apparatus comprises a light emission structure to emit light; a light supplying unit included in the light emission structure and to make the resonation of the light; and a light antenna layer including a light reflection unit to reflect the light emitted from the light supplying unit to have the directionality of the light. The light supplying unit has a slot shape to penetrate through the light antenna layer. COPYRIGHT KIPO 2015 ...

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26-04-2017 дата публикации

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL

Номер: KR1020170045040A
Принадлежит:

Disclosed is a semiconductor device including two-dimensional material. According to an embodiment, the semiconductor device comprises: a substrate; a two-dimensional material layer formed on the substrate and having a first area and a second area adjacent thereto; and a source/drain electrode formed to be in contact with the first area and the second area of the two-dimensional material layer. The first oxygen adsorption rate, which is the amount of oxygen adsorbed on the surface of the two-dimensional material layer of the first area, is different from the second oxygen adsorption rate, which is the amount of oxygen adsorbed on the surface of the two-dimensional material layer of the second area. The semiconductor device having a P-N junction using a semiconductor layer has a simple structure and does not have an interface issue due to formation of the semiconductor layer with single two-dimensional material. COPYRIGHT KIPO 2017 ...

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11-01-2021 дата публикации

Semiconductor device method of manufacturing the same and electronic device including semiconductor device

Номер: KR102201320B1
Принадлежит: 삼성전자주식회사

... 반도체소자와 그 제조방법 및 반도체소자를 포함하는 전자소자에 관해 개시되어 있다. 개시된 반도체소자는 제1 및 제2 트랜지스터를 포함할 수 있고, 상기 제1 트랜지스터는 제1 채널층 및 제1 이온겔(ion gel)을 포함할 수 있고, 상기 제2 트랜지스터는 제2 채널층 및 제2 이온겔을 포함할 수 있다. 상기 제1 및 제2 채널층은, 예컨대, 그래핀을 포함할 수 있다. 상기 제1 및 제2 이온겔은 서로 다른 이온성 액체(ionic liquid)를 포함할 수 있다. 상기 제1 및 제2 이온겔은 서로 다른 양이온 및/또는 서로 다른 음이온을 포함할 수 있다. 상기 제1 및 제2 트랜지스터 중 하나는 p형일 수 있고, 다른 하나는 n형일 수 있다. 상기 제1 및 제2 트랜지스터는 인버터를 구성할 수 있다.

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02-11-2022 дата публикации

범프를 갖는 반도체 소자 및 그 형성 방법

Номер: KR102462504B1
Принадлежит: 삼성전자주식회사

... 필라 범프(pillar bump)를 갖는 반도체 소자에 관한 것이다. 기판 상에 도전성 패드가 형성된다. 상기 도전성 패드 상에 필라(pillar)가 형성된다. 상기 필라 상에 금속간 화합물 층(IMC layer)이 형성된다. 상기 금속간 화합물 층 상에 솔더 층이 형성된다. 상기 필라는 상기 금속간 화합물 층보다 좁은 폭을 갖는다.

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19-04-2018 дата публикации

QUANTUM DOT LIGHT EMITTING ELEMENT AND OPTICAL APPARATUS INCLUDING SAME

Номер: KR1020180040038A
Принадлежит:

Provided is a quantum dot light emitting element. The quantum dot light emitting element comprises: a grating element provided with a grating area having a predetermined grating period; and a quantum dot layer disposed on the grating area, wherein a wavelength band selected in the grating area and a wavelength band emitted from the quantum dot layer correspond to each other, thereby obtaining color light with high color purity. COPYRIGHT KIPO 2018 ...

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10-06-2016 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: KR1020160066272A
Принадлежит:

The present invention is designed to provide a method for manufacturing a semiconductor device with high reliability. In the method for manufacturing a semiconductor device, a first conductive pattern structure of which a part is projected from a first interlayer insulating film formed on a first substrate is formed on the first interlayer insulating film. A first bonding insulating film pattern surrounding the projected portion of the first conductive pattern structure is formed on the first interlayer insulating film. A first recess is formed on a first bonding insulation film pattern. A first adhesive pattern which fills up a first recess and includes a polymer is formed. A second conductive pattern structure of which a part is projected from a second interlayer insulating film formed on a second substrate is formed on the second interlayer insulating film. A second bonding insulating film pattern surrounding a projected part of a second conductive pattern structure is formed on the ...

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28-05-2018 дата публикации

박막 패터닝 방법, 이를 이용한 나노구조체의 형성방법 및 나노구조체를 포함하는 소자

Номер: KR0101861146B1
Принадлежит: 삼성전자주식회사

... 박막 패터닝 방법, 이를 이용한 나노구조체의 형성방법 및 나노구조체를 포함하는 소자에 관해 개시되어 있다. 개시된 박막 패터닝 방법은 기판의 제1면에 개구부를 갖는 광차단층을 형성하는 단계, 상기 개구부에 의해 노출된 기판 및 상기 광차단층 상에 발광 물질을 포함하는 감광성 물질층을 형성하는 단계, 상기 기판의 제2면 측에서 상기 감광성 물질층을 노광하는 단계 및 상기 감광성 물질층을 현상하는 단계를 포함할 수 있다. 상기 개구부는 나노스케일을 가질 수 있다. 상기 발광 물질은 나노파티클 형태를 가질 수 있다. 개시된 나노구조체는 나노스케일의 개구부를 갖는 제1물질층 및 상기 개구부에 구비된 제2물질층을 포함할 수 있다. 상기 제2물질층은 감광 물질과 발광 물질 중 적어도 하나를 포함할 수 있다. 상기 나노구조체는 플라즈모닉 나노구조체일 수 있다.

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18-01-2019 дата публикации

표면 플라즈몬 레이저

Номер: KR0101939268B1
Принадлежит: 삼성전자주식회사

... 표면 플라즈몬 레이저가 개시된다. 개시된 표면 플라즈몬 레이저는, 금속층과, 금속층 상에 마련되고 이 금속층과의 계면에서 표면 플라즈몬 공명에 의해 발생되는 표면 플라즈몬 광이 원을 따라 도는 위스퍼링 갤러리 모드가 발생되는 원형 구조부분을 가지는 이득 매질층과, 이득 매질층의 원형 구조부분으로부터 발생된 레이저광의 일부가 출력되도록 형성된 변형부를 구비한다.

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27-01-2016 дата публикации

SEMICONDUCTOR DEVICE AND METHODS FOR MANUFACTURING SAME

Номер: KR1020160010081A
Принадлежит:

A method for manufacturing a semiconductor device according to embodiments of the present invention can form a first diffusion prevention insulation pattern on an inner wall of a first aperture and a first interlayer insulation film and can form a first diffusion prevention insulation film by performing anisotropic etching of the first diffusion prevention insulation film. The first aperture where the first diffusion prevention insulation pattern is formed is filled to form a first conducive pattern structure. A second diffusion prevention insulation film can be formed on an inner wall of a second aperture and a second interlayer insulation film. A second diffusion prevention insulation pattern can be formed by performing anisotropic etching of the second diffusion prevention insulation film, and a second conductive pattern structure filling the second aperture formed with the second diffusion prevention insulation pattern can be formed. First substrate and second substrate can be bonded ...

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24-05-2016 дата публикации

Surface light emitter based on quantum dot and surface plasmon coupling

Номер: KR0101623542B1
Принадлежит: 삼성전자주식회사

... 양자점과 표면 플라즈몬 커플링에 바탕을 둔 면발광소자가 개시된다. 개시된 면발광소자는, 제1양자점들이 내포된 제1양자점 영역과, 제1양자점보다 발광 파장이 짧도록 마련된 제2양자점들이 내포되어 있으며 제1양자점 영역으로부터 이격된 제2양자점 영역을 구비한다. 금속층은 기판 상에 위치하며 제1 및 제2양자점 영역이 마련되며 제2양자점에서 여기된 광 에너지가 표면 플라즈몬 전파되어 제1양자점으로 전달되어 제1양자점에서 발광이 일어나도록 마련된다.

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07-04-2017 дата публикации

SEMICONDUCTOR LASER RESONATOR AND SEMICONDUCTOR LASER DEVICE HAVING SAME

Номер: KR1020170038521A
Принадлежит:

Disclosed is a semiconductor laser resonator which generates laser light by absorbing energy from the outside. The semiconductor laser resonator comprises a semiconductor material; and a gain medium layer including a semiconductor material, and including at least one protrusion unit provided to be protruded in an upper part by at least one trench. The laser light can be bound with a normal wave inside of at least one of at least one protrusion unit. The semiconductor laser resonator can select or separate a resonance mode. COPYRIGHT KIPO 2017 ...

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16-08-2018 дата публикации

LASER RESONATOR AND LASER RESONATOR ARRAY

Номер: KR1020180091532A
Принадлежит:

Disclosed is a laser resonator generating laser light by absorbing energy from the outside. The laser resonator comprises: a metal body; and a ring-shaped gain medium layer provided in the metal body. The ring-shaped gain medium layer is provided in the metal body, thereby generating the laser light by a plasmonic effect. COPYRIGHT KIPO 2018 ...

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06-03-2017 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: KR1020170023643A
Принадлежит:

The present invention relates to a semiconductor device, comprising: a through electrode structure which penetrates a substrate and is exposed to the top of the substrate; a protective layer pattern structure having a first protective layer pattern formed on the substrate to cover the bottom of the sidewall of the exposed through electrode structure and expose the top of the sidewall of the exposed through electrode structure, and a second protective layer pattern formed on the first protective layer pattern to partially expose the top of the first protective layer pattern adjacent to the through electrode structure; and a pad structure formed on the through electrode structure and the protective layer pattern structure and covering the top of the first protective layer pattern exposed by the second protective layer pattern. COPYRIGHT KIPO 2017 ...

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04-01-2018 дата публикации

OPTICAL DEVICE INCLUDING SLOT AND APPARATUS ADOPTING SAME

Номер: KR1020180000938A
Принадлежит:

An optical device including a slot and an apparatus adopting the same are disclosed. The disclosed optical unit device is a device which selectively transmits an electromagnetic wave of a preset wavelength region and includes a material layer with two or more slots whose intervals are controlled. The intervals between the two or more slots are controlled so that the optical unit device has a Q-factor of about 5 or more. When a resonance wavelength of the optical unit device is λ and a refractive index of a medium in contact with an incident surface of the material layer is n, the two or more slots have an interval larger than λ/(2.5 x n). The optical unit device can be applied to various apparatus such as a spectroscope and a spectroscopic device. Accordingly, the present invention can provide the optical device with a small size and high performance. COPYRIGHT KIPO 2018 ...

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15-05-2015 дата публикации

NANOSTRUCTURE AND OPTICAL DEVICE COMPRISING SAME

Номер: KR1020150053157A
Принадлежит:

In the present invention, disclosed are a nanostructure and an optical device including the same wherein the disclosed nanostructure comprises a nanopattern formed on carbon nanomaterial layers like graphene as metal; and metal layers formed on the nanopattern; and can be formed in a ring shape wherein the metal layer can be formed by forming a plurality of metal layers consisting of different metals. COPYRIGHT KIPO 2015 ...

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02-07-2018 дата публикации

광학 소자 및 광학 소자로부터의 광의 진행방향을 제어하는 방법

Номер: KR0101872788B1

... 광학 소자 및 광학 소자로부터의 광의 진행 방향을 제어하는 방법이 개시된다. 개시된 광학 소자는, 금속층 상에 광원을 포함하는 적어도 하나의 제1 나노 구조물과 상기 제1 나노 구조물에 이격되게 배치된 적어도 하나의 제2 나노 구조물을 포함한다.

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14-06-2016 дата публикации

LIGHT INTERCONNECTION DEVICE USING PLASMONIC VIA

Номер: KR1020160067621A
Принадлежит:

A light interconnection device comprises a metal-insulator-metal (MIM) waveguide, and a plasmonic antenna including a slot which penetrates through a metal layer. The plasmonic antenna is able to emit light as a plasmonic form through a surface plasmon effect, thereby emitting incident light in a desired direction to a multilayer of a structure. COPYRIGHT KIPO 2016 ...

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10-02-2021 дата публикации

Optical filter and Optical measuring equipment employing the optical filter

Номер: KR102214832B1
Автор: 노영근, 박연상
Принадлежит: 삼성전자주식회사

... 광 필터 및 광 필터를 채용한 광 측정 장치가 개시된다. 개시된 광 필터는 입사되는 빛으로부터 소정 파장의 빛 만을 선택적으로 투과시키는 것으로서 적어도 하나의 픽셀을 포함하고, 상기 적어도 하나의 픽셀은, 빛이 입사되는 것으로, 복수의 제 1 홀들이 형성되어 있는 제 1 반사판 및 상기 제1 반사판을 투과한 빛이 입사되는 것으로, 상기 제 1 반사판과 소정의 간격으로 이격되어 대향되게 배치되고, 복수의 제 2 홀들이 형성되어 있는 제 2 반사판을 포함한다.

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20-12-2018 дата публикации

반도체 장치 및 그 제조 방법

Номер: KR0101931115B1
Принадлежит: 삼성전자주식회사

... 반도체 장치 및 그 제조 방법이 제공된다. 반도체 장치는 서로 대향하는 제 1 면 및 제 2 면과, 제 2 면의 일부가 리세스된 패드 트렌치를 갖는 반도체 기판; 반도체 기판을 관통하며, 패드 트렌치에서 돌출된 관통 전극; 및 패드 트렌치 내에 매립되어 관통 전극을 둘러싸는 매립 패드를 포함한다.

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17-04-2017 дата публикации

GRAPHENE DEVICE AND OPERATING METHOD THEREOF

Номер: KR1020170041517A
Принадлежит:

Provided are a graphene device and an operating method thereof. The graphene device comprises: an active layer including a plurality of meta atoms having a radiation shape to be spaced apart from each other and a graphene layer in contact with each of the plurality of meta atoms; and a dielectric layer covering the active layer. The graphene device filters incident light and modulates the incident light by control light. COPYRIGHT KIPO 2017 ...

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05-03-2015 дата публикации

VARIABLE NANOANTENNA AND METHODS FOR MANUFACTURING AND OPERATING SAME

Номер: WO2015030518A1
Принадлежит:

Disclosed are an optical nanoantenna including a variable material layer and methods for manufacturing and operating the same. The disclosed optical nanoantenna includes a plurality of material layers that are sequentially stacked on a substrate, the plurality of material layers including at least one variable material layer and at least one slot. A first variable material layer and a metal layer are sequentially stacked on the substrate, and a first slot may be formed in the metal layer. A metal layer and a first variable material layer are sequentially stacked on the substrate, and a first slot may be formed in the metal layer. A first variable material layer, a metal layer and a second variable material layer are sequentially stacked on the substrate, and a first slot may be formed in the metal layer. A second slot inclined toward the first slot may exist in the metal layer.

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29-03-2017 дата публикации

BEAM STEERING DEVICE, OPTICAL APPARATUS INCLUDING SAME, AND BEAM STEERING METHOD

Номер: KR1020170034605A
Принадлежит:

A beam steering device, an optical device including the same, and a beam steering method are disclosed. The disclosed beam steering device includes a polarization converter for adjusting a polarization direction of light irradiated from a light source, a metal layer, and an antenna array which is formed on the metal layer and a plurality of antenna elements depending on the polarization direction of the light. The traveling direction of the light can be adjusted by synthesizing light emitted from each of a plurality of base units by adjusting the polarization direction of the light. COPYRIGHT KIPO 2017 ...

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31-12-2015 дата публикации

NANOSTRUCTURE AND OPTICAL DEVICE COMPRISING SAME

Номер: KR1020150145838A
Принадлежит:

Disclosed are a nanostructure and an optical device comprising the same. The disclosed nanostructure can comprise a nanopattern having various shapes on a carbon nanomaterial layer such as graphene. The nanopattern can include a first nanopattern and a second nanopattern having different shapes each other. The nanopattern can have a spherical shape, a cubical shape, and a polypyramid shape including a triangular pyramid shape or a polyprism shape. COPYRIGHT KIPO 2016 ...

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27-01-2016 дата публикации

OPTICAL FILTER AND OPTICAL MEASUREMENT DEVICE USING OPTICAL FILTER

Номер: KR1020160009883A
Принадлежит:

Provided are an optical filter and an optical measurement device using the optical filter. The disclosed optical filter selectively transmits particular wavelength of light from incident light. The optical filter comprises at least one pixel. The pixel comprises: a first reflective plate which is configured to receive incident light, and has a plurality of first holes formed therein; and a second reflective plate which is configured to receive incident light transmitted through the first reflective plate, faces the first reflective plate with a predetermined gap therebetween, and has a plurality of second holes formed therein. COPYRIGHT KIPO 2016 ...

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11-03-2016 дата публикации

APPARATUS AND METHOD OF MONITORING BLOOD PRESSURE, AND WEARABLE DEVICE HAVING FUNCTION OF MONITORING BLOOD PRESSURE

Номер: KR1020160028303A
Принадлежит:

An objective of the present invention is to provide an apparatus and a method of monitoring a blood pressure, and a wearable device having a function of monitoring a blood pressure. The method of monitoring a blood pressure emits a laser towards a blood vessel in in a body part to be inspected, detects last speckles caused by scattering of the emitted laser from the body part to be inspected, uses the detected last speckles to acquire a bio-signal indicating a volume change of the blood vessel, and estimates a blood pressure based on the acquired bio-signal. COPYRIGHT KIPO 2016 ...

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07-11-2018 дата публикации

MULTI-WAVELENGTH LASER APPARATUS

Номер: KR1020180121375A
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Disclosed is a multi-wavelength laser apparatus which comprises: a meta mirror layer having a plurality of patterns formed on the surface; a laser light emitting unit generating laser light formed on the meta mirror layer wherein the laser light emitting unit is an optical gain structure; and an upper mirror layer formed on the laser light emitting unit. A conductive graphene layer can be formed between the meta mirror layer and the laser light emitting unit. COPYRIGHT KIPO 2018 ...

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16-09-2022 дата публикации

빔 스티어링 소자, 이를 포함한 광학 기기 및 빔 스티어링 방법

Номер: KR102444285B1
Автор: 박연상, 노영근
Принадлежит: 삼성전자주식회사

... 빔 스티어링 소자, 이를 포함한 광학 기기 및 빔 스티어링 방법이 개시된다. 개시된 빔 스티어링 소자는, 광원으로부터 조사된 광의 편광 방향을 조절하는 편광 변환기와, 금속층과, 상기 금속층에 구비된 것으로, 상기 광의 진행 방향이 상기 광의 편광 방향에 의존하는 복수 개의 안테나 엘리먼트를 포함하는 안테나 어레이를 포함하여, 광의 편광 방향을 조절하여 복수 개의 베이스 유닛 각각으로부터 나온 광을 합성하여 광의 진행 방향을 조절할 수 있다.

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27-07-2015 дата публикации

OPTICAL DEVICE AND METHOD TO CONTROL DIRECTION OF LIGHT FROM SAME

Номер: KR1020150086098A
Принадлежит:

Disclosed are an optical device and a method to control a direction of light from the same. The disclosed optical device comprises: a substrate; a metal layer on the substrate; a first slot in a nanosize which is formed on the metal layer; and at least one light emitting source arranged in the first slot. The optical device emits light from the light emitting source in an upper direction of the first slot or in a lower direction of the first slot. COPYRIGHT KIPO 2015 ...

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10-03-2025 дата публикации

광필터 및 이를 포함하는 분광기

Номер: KR102778197B1
Автор: 이재숭, 박연상, 김효철
Принадлежит: 삼성전자주식회사

... 본 개시에 따른 일 실시예는 서로 수평 방향으로 이격되고, 수직 방향으로 연장되어 형성된 복수 개의 나노기둥을 포함하며, 상기 복수 개의 나노기둥 각각은, 서로 다른 광 흡수 계수(extinction coefficient)를 가지는 제1 물질층 및 제2 물질층을 포함하는 광필터 유닛 및 이를 포함하는 분광기를 제공한다.

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10-08-2016 дата публикации

표면 플라즈몬 폴라리톤 변조기

Номер: KR0101647046B1
Принадлежит: 삼성전자주식회사

... 유전체 재료의 물성을 국소적으로 변화시켜 표면 플라즈몬 폴라리톤을 제어할 수 있는 표면 플라즈몬 폴라리톤 변조기가 개시된다. 예를 들어, 개시된 표면 플라즈몬 폴라리톤 변조기는 두 금속층 사이에 개재된 제 1 유전체층과 제 2 유전체층을 포함할 수 있으며, 제 2 유전체층은 전기장, 자기장, 열, 음파 또는 화학/생물학적 작용에 의해 굴절률이 변화하는 재료일 수 있다. 본 발명의 일 실시예에 따르면, 개시된 표면 플라즈몬 폴라리톤 변조기는 전기 신호로 표면 플라즈몬의 진행 방향, 세기, 위상 등을 제어할 수 있다. 또한, 개시된 표면 플라즈몬 폴라리톤 변조기는 표면 플라즈몬 폴라리톤 멀티플렉서, 디멀티플렉서의 기능을 수행할 수도 있다.

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08-01-2019 дата публикации

전기적 연결 구조 및 그 제조방법

Номер: KR0101936232B1
Принадлежит: 삼성전자주식회사

... 본 발명은 전기적 연결 구조 및 그 제조방법에 관한 것으로, 본딩패드를 갖는 기판, 상기 기판 상에 배치되어 상기 본딩패드를 개방하는 보호막, 상기 본딩패드와 전기적으로 연결되는 솔더볼, 상기 본딩패드 상에 배치되어 상기 솔더볼이 채워지는 내부 영역을 제공하는 솔더볼 지지막, 그리고 상기 본딩패드와 상기 솔더볼 지지막 사이에 배치되고 상기 본딩패드를 구성하는 금속에 비해 이온화경향이 작은 금속을 포함하는 금속막을 형성하는 것을 포함할 수 있다.

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21-04-2016 дата публикации

AUTHENTICATION STRUCTURE AND METHOD FOR AUTHENTICATING OBJECT, AND APPARATUS ADOPTING SAME

Номер: KR1020160043452A
Принадлежит:

Disclosed are an authentication structure and method for authenticating an object and an apparatus adopting the authentication structure and method. A disclosed authentication structure may be configured to output a speckle pattern attributable to a surface plasmon. The speckle pattern may be used for authentication of the object. According to another aspect, a disclosed authentication structure may include an input coupler and an output coupler which are spaced apart from each other. The output coupler may be configured to output an interference pattern using a coherent wave guided from the input coupler. The coherent wave may include a surface plasmon, and the interference pattern may include a speckle pattern. COPYRIGHT KIPO 2016 ...

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07-10-2015 дата публикации

SEMICONDUCTOR DEVICE HAVING HYBRID STACKING STRUCTURE AND METHODS FOR MANUFACTURING SAME

Номер: KR1020150112112A
Принадлежит:

The present invention relates to a semiconductor device having a hybrid stacking structure and a method for manufacturing the same. The semiconductor device of the present invention includes a chip stacked body where a second semiconductor chip and a third semiconductor chip are stacked on a first semiconductor chip and a connection port. The first semiconductor chip includes a first front plane which is provided with a first circuit layer and a first rear plane opposite to the first front plane. The second semiconductor chip includes a second front plane which is provided with a second circuit layer, a second rear plane opposite to the second front plane and a second through-hole electrode penetrating the second semiconductor chip. The third semiconductor chip includes a third front plane which is provided with a third circuit layer and a third rear plane opposite to the third front plane. The second semiconductor chip is stacked on the first semiconductor chip so the second front plane ...

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29-01-2016 дата публикации

HEAT FLOW CONTROL DEVICE

Номер: KR1020160011103A
Принадлежит:

A heat flow control device is disclosed. The disclosed heat flow control device emits heat, which is generated from a semiconductor element region formed in a matrix, to the outside to have directivity or prevents external heat from flowing into the semiconductor element region. The heat flow control device comprises: a heat rectifier region formed adjacent to the semiconductor element region; and a heat flow blocking part formed in at least one region which comes in contact with the semiconductor region or the heat rectifier region. COPYRIGHT KIPO 2016 ...

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