04-06-2018 дата публикации
Номер: KR1020180058993A
Принадлежит:
According to a technical idea of the present invention, a method of forming a pattern of a semiconductor device, capable of forming a micro pattern using a hardmask composition having high etch resistance, comprises the following steps: preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, a polymer containing aromatic ring, and a solvent; applying the hardmask composition on a film to be etched; forming a hardmask by treating the applied hardmask composition by heating; forming a photoresist pattern on the hardmask; etching the hardmask using the photoresist pattern as an etching mask to form a hardmask pattern; and etching the film to be etched using the hardmask pattern as the etching mask to form a pattern to be etched. COPYRIGHT KIPO 2018 (AA) Start (BB) End (S11) Preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, a polymer containing aromatic ring, and a solvent (S21) Applying the hardmask composition ...
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