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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 14. Отображено 14.
18-05-2018 дата публикации

SEMICONDUCTOR DEVICE AND AUTOFOCUS DEVICE INCLUDING SAME

Номер: KR1020180052265A
Принадлежит:

The present invention provides a semiconductor device and an autofocus device, which can realize a wafer level package. According to an embodiment of the present invention, the semiconductor device comprises: a substrate; a spacer located on the substrate; a first adhesion layer between the substrate and the spacer; and a light emitting device located on the substrate. The light emitting device includes a vertical cavity surface emitting layer (VCSEL). The spacer includes a cavity exposing the upper surface of the substrate, and the light emitting device is located inside the cavity. Also, the outer side surface of the substrate and the outer side surface of the spacer can be located at the same plane. COPYRIGHT KIPO 2018 ...

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03-08-2018 дата публикации

VERTICAL CAVITY SURFACE EMITTING LASER SEMICONDUCTOR DEVICE, LIGHT TRANSMITTING MODULE AND LIGHT TRANSMITTING APPARATUS

Номер: KR1020180088110A
Принадлежит:

An embodiment of the present invention relates to a vertical cavity surface emitting laser (VCSEL) semiconductor device, a light transmitting module, and a light transmitting apparatus. The VCSEL semiconductor device according to an embodiment of the present invention includes a light emitting structure and a guide part. The light emitting structure according to an embodiment of the present invention includes a first conductive DBR layer, a second conductive DBR layer, and an active layer disposed between the first conductive DBR layer and the second conductive DBR layer. The guide part according to an embodiment of the present invention is disposed on the upper surface of the light emitting structure. The light emitting structure according to an embodiment of the present invention includes a light emitting aperture which emits light in a direction perpendicular to the upper surface of the light emitting structure, and the guide part provides a through hole with a larger diameter than the ...

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25-06-2018 дата публикации

OPTICAL TRANSMITTING MODULE AND OPTICAL TRANSMITTING APPARATUS

Номер: KR1020180069362A
Принадлежит:

An embodiment relates to an optical transmitting module and an optical transmitting apparatus. Embodiments provide an optical transmitting module and an optical transmitting apparatus which can be implemented in a small size, facilitate an optical alignment, be suitable for mass production by lowering the manufacturing costs and simplifying the manufacturing processes and increase coupling efficiency by implementing a high optical alignment scheme. According to an embodiment, the optical transmitting module comprises: a substrate; a submount disposed on a first surface of the substrate; a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on the first surface of the submount; and a module housing including a coupling portion disposed to be spaced apart from the VCSEL semiconductor device to face the first surface of the submount and a body extending from the coupling portion toward the first surface of the substrate to be disposed around the submount and the VCSEL ...

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14-11-2019 дата публикации

SURFACE EMITTING LASER PACKAGE AND LIGHT EMITTING DEVICE COMPRISING SAME

Номер: WO2019216724A1
Принадлежит:

An embodiment relates to a surface emitting laser package and a light emitting device comprising same. The surface emitting laser package according to an embodiment may comprise: a housing including a cavity; a surface emitting laser element disposed in the cavity; and a diffusion part disposed on the housing. The diffusion part may include a polymer layer, and a glass layer disposed on the polymer layer. The polymer layer may include: a first polymer layer which vertically overlaps the surface emitting laser element; and a second polymer layer which does not vertically overlap the surface emitting laser element. The first polymer layer may have a thickness thinner than that of the second polymer layer.

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09-05-2016 дата публикации

SMARTPHONE CAMERA MODULE SOLDERING METHOD AND SOLDERING DEVICE

Номер: KR101618271B1
Принадлежит: SEO, SEONG KI

The present invention relates to a smartphone camera module soldering method and a soldering device and, more specifically, relates to a smartphone camera module soldering method and a soldering device, which enable soldering to be easily performed by stimulating an enamel coating film to protect an outer circumferential surface of a coil with high-frequency fusion to be instantaneously melted and used. According to the present invention, the smartphone camera module soldering method may comprise the following steps of: arranging an enamel-coated coil terminal portion on a pad portion; removing the enamel coating film by using a heater in the coil terminal portion arranged on the pad portion; applying solder cream on the coil wherein the enamel coating film is removed; and welding the coil terminal portion wherein the solder cream is applied in the pad portion. COPYRIGHT KIPO 2016 (AA) Step of transporting a camera module to a worktable (BB) Step of arranging an enamel-coated coil terminal ...

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31-01-2023 дата публикации

차량용 고임목

Номер: KR102494616B1
Автор: 강호재
Принадлежит: 강호재

... 본 발명은 차량 바퀴를 지지토록 차량바퀴와 직접 접촉되며 지지되는 고임목본체와, 상기 고임목본체의 저면을 감싸며 지면에 지지되는 고임목슈즈로 이루어진 차량용 고임목에 관한 것이다.

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04-07-2018 дата публикации

SEMICONDUCTOR DEVICE, OPTICAL MODULE, AND OPTICAL ASSEMBLY INCLUDING SAME

Номер: KR1020180075199A
Принадлежит:

An embodiment of the present invention relates to a semiconductor device, an optical module, and an optical assembly. The semiconductor device according to an embodiment of the present invention includes: a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; and an insulation layer arranged on the light emitting structure. According to the embodiment of the present invention, the semiconductor device includes a first magnetic material layer arranged on the insulation layer. Accordingly, the present invention can perform self-alignment between an optical fiber and a semiconductor light emitting device. COPYRIGHT KIPO 2018 ...

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04-01-2018 дата публикации

LIGHT EMITTING DEVICE PACKAGE

Номер: KR1020180000969A
Принадлежит:

An embodiment of the present invention relates to a light emitting device package which comprises: a package body having a cavity formed therein; first and second lead frames arranged in the package body; a light emitting device arranged in the second lead frame; a first molding layer surrounding the light emitting device, and arranged in the cavity; a second molding layer arranged in an upper part of the first molding layer; and a lens arranged in an upper surface of the package body and an upper part of the second molding layer. The first molding layer has a first refractive index, and the lens has a second refractive index smaller than the first refractive index. The light emitting device package can realize white and PC-amber colors by installing a phosphor film between a molding material coated on the light emitting device and the lens arranged in an upper part of the molding material. COPYRIGHT KIPO 2018 ...

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07-12-2022 дата публикации

시트벨트 마운팅 구조

Номер: KR20220161968A
Автор: 강호재, 이해훈
Принадлежит:

... 본 발명은 시트벨트가 마운팅되는 부분을 보강하기 위한 부품수를 감소시키면서도 시트벨트 앵커리지의 강성을 증대시키고, 시트벨트의 마운팅 하중을 효율적으로 분산시키는 시트벨트 마운팅 구조에 관한 것으로, 본 발명에서는, 쿼터이너패널과 루프센터레일과 루프리어레일을 연결하는 릴마운팅레인프; C필러의 후방으로 쿼터이너패널을 향해 연장 형성되는 C필러레인프; 및 상기 루프센터레일 측의 릴마운팅레인프와, 쿼터이너패널 측의 릴마운팅레인프와, C필러레인프에 마운팅되는 시트벨트 릴;을 포함하여 구성되는 시트벨트 마운팅 구조가 소개된다.

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21-06-2018 дата публикации

OPTICAL TRANSMISSION MODULE

Номер: WO2018110981A1
Принадлежит:

Embodiments pertain to a semiconductor device, an optical transmission module and an optical transmission device. The optical transmission module according to an embodiment may comprise: a substrate; a sub-mount disposed on a first surface of the substrate; a vertical-cavity surface-emitting laser (VCSEL) semiconductor device disposed on a first surface of the sub-mount; and a module housing which comprises a coupling part disposed away from the vertical-cavity surface-emitting laser (VCSEL) semiconductor device and disposed to mutually face the first surface of the sub-mount, and which comprises a body extended from the coupling part in the direction of the first surface of the substrate and disposed around the sub-mount and the vertical-cavity surface-emitting laser (VCSEL) semiconductor device.

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25-06-2018 дата публикации

SEMICONDUCTOR DEVICE PACKAGE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE PACKAGE, AND AUTOMATIC FOCUSING DEVICE

Номер: KR1020180069361A
Принадлежит:

The present invention relates to a semiconductor device package, a method for manufacturing a semiconductor device package, and an automatic focusing device including a semiconductor device package. According to an embodiment of the present invention, the semiconductor device package comprises a package body, an extension unit, and a vertical cavity surface emitting laser (VCSEL) semiconductor device which is arranged on a support unit and is arranged below the extension unit. The package body includes the support unit, a first side wall, and a second side wall. The first side wall protrudes at a first thickness in an upper surface edge area of the support unit, and includes a first upper surface of a first width. The second side wall protrudes at a second thickness on the first upper surface of the first side wall, and includes a second upper surface of a second width. The support unit, the first side wall, and the second side wall are integrally formed with the same material. The extension ...

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26-09-2017 дата публикации

질화갈륨계 반도체 발광소자 및 그 제조방법

Номер: KR0101781505B1
Автор: 김종빈, 강호재, 임재구
Принадлежит: 엘지디스플레이 주식회사

... 본 발명은, 기판과, 기판 상부에 형성되고 표면이 질화처리된 산화갈륨계 제1버퍼층과, 산화갈륨계 제1버퍼층 상부에 형성되는 언도프(undoped) 질화갈륨계 반도체층과, 언도프(undoped) 질화갈륨계 반도체층 상부에 형성되는 N형 질화갈륨계 반도체층과, N형 질화갈륨계 반도체층 상부에 형성되는 질화갈륨계 활성층과, 질화갈륨계 활성층 상부에 형성되는 P형 질화갈륨계 반도체층을 포함하는 질화갈륨계 반도체 발광소자를 제공하고, 질화갈륨계 반도체 발광소자의 결정성을 개선하고 화학적 리프트 오프 방법을 적용할 수 있다.

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21-06-2018 дата публикации

SEMICONDUCTOR DEVICE PACKAGE AND METHOD FOR PRODUCING SAME

Номер: WO2018110982A1
Принадлежит:

Embodiments pertain to a semiconductor device package, a method for producing the semiconductor device package, and an auto-focusing device comprising the semiconductor device package. The semiconductor device package according to an embodiment may comprise: a package body; a spread part; and a vertical-cavity surface-emitting laser (VCSEL) semiconductor device disposed over a support part and under the spread part. According to the embodiment, the package body comprises the support part, a first side wall protruding to a first thickness from an edge area of the upper surface of the support part and having a first upper surface having a first width, and a second side wall protruding to a second thickness from the first upper surface of the first side wall and having a second upper surface having a second width, wherein the support part, the first side wall and the second side wall may be integrally formed with the same material. The spread part is disposed over the first upper surface of ...

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07-10-2015 дата публикации

LIGHT EMITTING ELEMENT

Номер: KR1020150112274A
Автор: KANG, HO JAE
Принадлежит:

According to an embodiment, a light emitting element includes a first conductive semiconductor layer; a relieving layer placed on the first conductive semiconductor layer; and multiple nitride semiconductor layers placed on the relieving layer. Each of the nitride semiconductor layers includes a superlattice layer including first and second layers; an active layer placed on the superlattice layer, and including a well layer and a wall layer; and a second conductive semiconductor layer placed on the active layer. An energy band gap of the relieving layer is smaller than an energy band gap of the first conductive semiconductor layer; an energy band gap of the first layer is smaller than an energy band gap of the second layer; the energy band gap of the first layer is smaller than the energy band gap of the relieving layer; and an energy band gap of the active layer is bigger than an energy band gap of the well layer. COPYRIGHT KIPO 2016 ...

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