Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

Es wird ein Halbleiterchip (1) mit einem Halbleiterkörper (2), der eine Halbleiterschichtenfolge mit einem zur Erzeugung von Strahlung vorgesehenen aktiven Bereich (25) umfasst, angegeben. Auf dem Halbleiterkörper (2) ist eine Spiegelstruktur (3) angeordnet, die eine Spiegelschicht (4) und eine zumindest bereichsweise zwischen der Spiegelschicht und dem Halbleiterkörper angeordnete dielektrische Schichtstruktur (5) aufweist. Ferner wird ein Verfahren zur Herstellung eines Halbleiterchips angegeben.

Vollständig selbstjustierter oberflächenemittierender Halbleiterlaser für die Oberflächenmontage mit optimierten Eigenschaften

Die vorliegende Erfindung bezieht sich auf einen oberflächenemittierenden Halbleiterlaser mit vertikalem Resonator, aufweisend einen Substratbasisabschnitt (1) und eine auf und/oder an dem Substratbasisabschnitt angeordnete Mesa (M), wobei die Mesa im Wesentlichen senkrecht zur Substratbasisebene gesehen, umfasst: zumindest einen Teil eines ersten, dem Substratbasisabschnitt zugewandt angeordneten Dotierbereiches (2), zumindest einen Teil eines zweiten, dem Substratbasisabschnitt abgewandt angeordneten Dotierbereiches (4) und einen zwischen dem ersten und dem zweiten Dotierbereich angeordneten aktiven Bereich (3) mit mindestens einer aktiven Schicht (A) mit laseremittierender Zone, welche imert, dadurch gekennzeichnet, dass die Mesa (M) in indestens eine Einschnürung (E) aufweist.

Vielfachhalbleiterlaseranordnung

Halbleiterlaserfeld und optischer Abtaster

Optisches Halbleitermodul

Sender und Empfänger für Lichtwellenleiterübertragung mit hoher Toleranz

Optisches Kopplungssystem, das folgende Merkmale aufweist: ein Array von optischen Elementen (97) zum Kollimieren von Licht von einem Array von optischen Fasern (95) zu der Form von kollimiertem Licht (103); ein Substrat, das ein Halbleitermaterial umfasst; ein Array von in dem Substrat gebildeten Lichtdetektoren (105); eine auf dem Substrat hergestellte Trägerstruktur; ein Array von an der Trägerstruktur befestigten Linsen (107) zum Empfangen des kollimierten Lichts von dem Array von optischen Elementen (97) und zum Fokussieren des kollimierten Lichts auf den Array von Lichtdetektoren (105), wobei der Array von Linsen (107) durch die Trägerstruktur in einem ersten Abstand von dem Array von Lichtdetektoren (105) entfernt angebracht ist, und eine Faseraufnahmeeinrichtung (91), die angepasst ist, um den Array von optischen Elementen (97) und den Array von optischen Fasern (95) in einem zweiten Abstand voneinander entfernt zu halten, derart, dass der Array von optischen Elementen (97) Licht ...

Semiconductor optical device arrays

INTEGRATION OF OPTO-ELECTRONIC ELEMENTS

LASER LIGHT SOURCE MODULE

A laser light source module is provided with a heat sink (3) which is formed of a material superior in thermal conductivity and is mounted on a stem (1), a submount substrate (4) which is formed of a material superior in insulation property and is mounted on the heat sink (3), a first lead frame (5) which is superior in electrical conductivity and thermal conductivity, is formed of a material having the almost same coefficient of linear expansion as a semiconductor laser array (7), is mounted on the submount substrate (4), mounts the semiconductor laser array (7) and constitutes a feed line of the semiconductor laser array (7), a second lead frame (6) which is formed of a material superior in electrical conductivity and thermal conductivity, is arranged on the submount substrate (4) with the first lead frame (5) and constitutes a feed line of the semiconductor laser array (7), and a wire (8) which electrically connects the semiconductor laser array (7) and the second lead frame (6).

SEMICONDUCTOR LASER

This novel laser comprises Q terraced semiconductor substrate having a relatively thick part and a relatively thin part with a step part therebetween. Semiconductor layers are formed over the substrate and include an upper clad layer and a lower clad layer with an active layer therebetween, the active layer having an inclined region extending downwardly from a position above the step part to R position above the relatively thin part of the substrate. An overriding layer is formed on the upper clad layer and has opposite conductivity type to that of the upper clad layer. A further layer having the same conductivity type as that of the overriding layer is formed on the overriding layer, such further layer having a stripe-shaped through-opening which is located above and slightly to one side of the inclined region of the active layer in a direction away from the step, such through-opening exposing a surface region of the overriding layer at the bottom of the through-opening. A conduction layer ...

SEMICONDUCTOR LASER

SEMICONDUCTOR LASER The present invention relates to a mesa-stripe geometry semiconductor laser. The laser is comprised of an electrode which is provided on one principal surface of a semiconductor wafer, a P-N junction provided on the other and opposite principal surface of the wafer, an active region which adjoins the P-N junction, and a mesa shaped current-conducting semiconductor region which is formed on a principal surface of the active region in a small sectional area and which contains the active region therein. The laser also is comprised of a mount supporting a second semiconductor region which is formed into a mesa shape by an etching groove formed on at least one side of said current-conducting semiconductor region. The laser is further comprised of a dielectric layer which covers surfaces of the second semiconductor region and the etching groove, an electrode formed on the dielectric layer and on the current-conducting semiconductor region and a heat sink. The mount supporting ...

A SINGLE-CHIP SERIES CONNECTED VCSEL ARRAY

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

SEMICONDUCTOR LASER LIGHT SOURCE

A semiconductor laser light source includes a semiconductor laser (1), and a sub-mount (2). The sub-mount (2) includes a sub-mount substrate (20), an Au layer (22) placed above the sub-mount substrate (20), a barrier layer (23) which is placed on the Au layer (22) and has a barrier portion (23b) at least in a portion of its outer peripheral portion which is other than a portion corresponding to a side of an output end of the semiconductor laser (1), and a solder layer (25) placed on the barrier layer in an area surrounded by the barrier portion (23b), wherein the semiconductor laser (1) is bonded to the sub-mount (2) through the solder layer (25), in a state where the semiconductor laser (1) is spaced apart by a predetermined interval from an inner surface of the barrier portion (23b), and further, the output end protrudes, in a direction of output of the laser light, from an end of the solder layer (25) which corresponds to the side of the output end of the semiconductor laser (1).

SEMICONDUCTOR LASER EXCITATION SOLID-STATE LASER

The purpose of the present invention is to achieve a high-efficiency semiconductor laser-excitation solid-state laser with a simple structure. For this purpose, the following are provided: a planar waveguide type solid-state laser element (101) that is disposed on a solid-state laser substrate (2) and in which on both faces of a plate-shaped solid-state laser medium (3) are formed claddings (15a, 15b) with a refractive index different from that of the solid-state laser medium; an LD array (1) that generates laser light for exciting the solid-state laser medium from an end face, and in which a light emission layer is formed between cladding layers on an LD substrate; and a sub-mount substrate (5) in which joining layers (6a, 7, 70) of two types of thicknesses are formed on the same face. The planar waveguide type solid-state laser element is joined to the sub-mount substrate via the joining layer of one of the two types of thicknesses, on the face opposite the face on which the solid-state ...

ASSEMBLY OF AN OPTICAL COMPONENT AND AN OPTICAL WAVEGUIDE

An assembly of an optical component, e.g. a laser diode (1), and an optical waveguide (2), in alignment with each other on a silicon-on-insulator chip which comprises a layer of silicon (7) separated from a substrate (8) by a layer of insulating material (9). A location recess is formed in the chip to receive the laser diode (1). The recess has at least two non-parallel location surfaces (3, 6) and the waveguide is formed on the chip in known alignment with the location surfaces (3, 6). The laser diode (1) has at least two reference surfaces (1A, 1B) and is mounted in the location recess so that the reference surface (1A, 1B) abut against the respective location surfaces (3, 6). The location recess is formed such that the position of one (6) of its location surfaces is determined by the position of the upper or lower interface of the layer of insulating material (9) of the silicon-on-insulator chip.

Halbleiterlaser

COUPLING ARRANGEMENT FOR OPTICAL COUPLING FROM LASER LIGHT SOURCES AT OPTICAL FIBERS AND PROCEDURES TO THEIR PRODUCTION.

Multilevel template assisted wafer bonding

Fabricating a multilevel composite semiconductor structure includes providing a first substrate comprising a first material; dicing a second substrate to provide a plurality of dies; mounting the plurality of dies on a third substrate; joining the first substrate and the third substrate to form a composite structure; and joining a fourth substrate and the composite structure.

Wavelength division multiplexing (WDM) optical modules

Examples herein relate to a Wavelength Division Multiplexing (WDM) optical module configured for M optical fibers, N WDM wavelengths and M×N optical signals. The module comprises an active silicon interposer, the interposer comprises a (M/2)×N array of photodetectors established on a front side of the interposer and N chips for the N WDM wavelengths. Each chip comprises M lenses for M optical signals, the M lenses established on a back side of a GaAs substrate, the M lenses comprising a first group of M/2 lenses to focus M/2 optical input signals onto M/2 photodetectors of the (M/2)×N array, and a second group of M/2 lenses to collimate M/2 optical output signals, and M/2 Vertical Cavity Surface Emitting Lasers (VCSELs) established on a front side of the GaAs substrate to generate the M/2 optical output signals.

Semiconductor laser diode and semiconductor laser diode assembly containing the same

Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser diode includes: a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel defined so that a top material layer of the second material layer is limitedly exposed, and in which a second electrode layer which is in contact with the top material layer of the second material layer via the channel is formed; and a first protrusion, which is positioned at one side of the ridge waveguide and has not less height than that of the ridge waveguide.

Method for producing a laser diode bar and laser diode bar

A diode bar and a method for producing a laser diode bar are disclosed. In an embodiment a laser diode bar includes a plurality of emitters arranged side by side, the each emitter having a semiconductor layer sequence with an active layer suitable for generating laser radiation, a p-contact and an n-contact, wherein the emitters comprise a group of electrically contacted first emitters and a group of non-electrically contacted second emitters, wherein the p-contacts of the first emitters are electrically contacted by a p-connecting layer, and wherein the p-contacts of the second emitters are separated from the p-connecting layer by an electrically insulating layer and are not electrically contacted.

Circuit system and manufacturing method for same

A circuit system includes: a first optoelectronic semiconductor component situated with an n-conductive surface facing an electrically conductive support surface and connected to the support surface in an electrically conductive manner; and a second optoelectronic semiconductor component situated with a p-conductive surface facing the support surface and connected to the support surface in an electrically conductive manner.

Rigid High Power and High Speed Lasing Grid Structures

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an epitaxial material comprising a mesa structure in combination with an electrical waveguide, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure.

Infrared illumination device configured with a gallium and nitrogen containing laser source

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination ...

Method of manufacture for an ultraviolet laser diode

A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

OPTOELECTRONIC COMPONENT

An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

LASER ELEMENT

A laser element comprises a substrate, an adhesive layer, and a laser unit adhesive to the substrate by the adhesive layer. The laser unit includes a front conductive structure, a first type semiconductor stack, an active layer, a second type semiconductor stack, a patterned insulating layer, a back conductive structure. The back conductive structure includes a first electrode and a second electrode, and the first electrode of the back conductive structure contacts the second type semiconductor stack. A via hole passing through the patterned insulating layer, the second type semiconductor stack, the active layer and the first type semiconductor stack, and a conductive channel located in the via hole and electrically connected to the second electrode of the back conductive structure and the front conductive structure. A first passivation layer formed on a sidewall of the via hole and located between the conductive channel and the sidewall of the via hole.

FLIP-CHIP OPTOELECTRONIC DEVICE

An optoelectronic device includes a semiconductor die that includes a substrate layer, a laser diode, first and second conducting pads, a cathode pad, an anode pad, and a passivation layer. The laser diode and the conducting pads are formed on the substrate layer. The formation of the conducting pads directly on the substrate layer offers an increased area for heat dissipation. The cathode pad is formed on the first conducting pad whereas the anode pad is formed above the second conducting pad. The passivation layer is formed above the laser diode. The attachment of the semiconductor die to a submount of the optoelectronic device occurs by way of the cathode pad and the anode pad. After the attachment, a free space is created directly between the passivation layer and the submount to reduce the impact of solder bonding stress on the laser diode.

Laser integration techniques

Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.

VCSEL С ВНУТРИРЕЗОНАТОРНЫМИ КОНТАКТАМИ

Использование: для создания лазерного устройства с высокой эффективностью преобразования мощности. Сущность изобретения заключается в том, что лазерное устройство образовано по меньшей мере одним поверхностно-излучающим лазером с вертикальным резонатором с внутрирезонаторными контактами, причем упомянутый поверхностно-излучающий лазер с вертикальным резонатором содержит эпитаксиальную слоистую структуру с активной областью между первым распределенным брэгговским отражателем и вторым распределенным брэгговским отражателем, первым слоем токовой инжекции первого типа проводимости между первым распределенным брэгговским отражателем и активной областью и вторым слоем токовой инжекции второго типа проводимости между вторым распределенным брэгговским отражателем и активной областью, и при этом дополнительно содержит токовую апертуру, причем упомянутые первый и второй слои токовой инжекции находятся в контакте с первым и вторым металлическими контактами соответственно, в котором упомянутые первый ...

СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО

Светоизлучающее устройство включает основание; лазерный элемент, расположенный на верхней поверхности основания и выполненный с возможностью излучения лазерного пучка продольно; люминесцентный элемент, расположенный на верхней поверхности основания; первый оптический элемент, расположенный на верхней поверхности основания и имеющий входную боковую поверхность, через которую входит лазерный пучок во время эксплуатации, и выходную боковую поверхность, через которую выходит лазерный пучок во время эксплуатации, и предназначенный для изменения направления распространения лазерного пучка таким образом, чтобы лазерный пучок, прошедший через первый оптический элемент, облучал верхнюю поверхность люминесцентного элемента; и крышку, содержащую: светозащитный элемент и светопропускающий элемент, расположенный над сквозным отверстием, лазерным элементом, люминесцентным элементом и первым оптическим элементом, при этом светозащитный элемент имеет выступающий участок, продолжающийся вниз в положение ...

Halbleiterlaseranordnung und Verfahren zur Herstellung einer Halbleiterlaseranordnung

Die Erfindung betrifft eine Halbleiterlaseranordnung (100) mit mindestens einem Halbleiterlaser (110), der dazu ausgebildet ist, Laserstrahlung (L) durch eine Austrittsfläche (112) abzugeben. Erfindungsgemäß ist mindestens ein von der Austrittsfläche (112) verschiedener Bereich (114a) einer Oberfläche (114) des Halbleiterlasers (110) und/oder der Halbleiterlaseranordnung (100) reflektierend ausgebildet für Strahlung (L) mindestens eines vorgebbaren Wellenlängenbereichs.

MEHRSTRAHLHALBLEITERLASEREINRICHTUNG

Flip-Chip-Anordnung aufweisend ein Array von Vertikalkavitäts-Oberflächen-emittierenden Lasern (VCSELs)

Vielfachhalbleiterlaser

Epitaxialstruktur für lichtemittierende Halbleiteranordnungen und lichtemittierende Halbleiteranordnung mit dieser Struktur.

Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers

Optoelektronisches Bauelement

Die Erfindung betrifft ein optoelektronisches Bauelement mit einer Schichtstruktur mit einer aktiven Zone zum Erzeugen einer elektromagnetischen Strahlung, wobei die aktive Zone in einer Ebene angeordnet ist, wobei die Schichtstruktur eine Oberseite und vier Seitenflächen aufweist, wobei eine streifenförmige Ridgestruktur auf der Oberseite der Schichtstruktur angeordnet ist, wobei sich die Ridgestruktur zwischen der ersten Seitenfläche und der dritten Seitenfläche erstreckt, wobei die erste Seitenfläche eine Abstrahlfläche für elektromagnetische Strahlung darstellt, wobei seitlich neben der Ridgestruktur in die Oberseite der Schichtstruktur (2) eine erste Ausnehmung eingebracht ist, wobei eine zweite Ausnehmung in die erste Ausnehmung eingebracht ist, und wobei die zweite Ausnehmung sich bis zu der zweiten Seitenfläche erstreckt.

BONDING A SEMICONDUCTOR TO A SUBSTRATE

Semiconductor laser device and method of fabricating semiconductor laser device

Mounting semiconductor lasers on heat sinks

A semiconductor laser device comprises: a semiconductor laser chip 100a ; a heat sink 200a on which said semiconductor laser chip 100a is mounted via a solder layer 8 ; a lower electrode formed on said semiconductor laser chip 100a comprising a layer 7b which is non-alloyed with the solder layer 8, and within prescribed distances from direct below the center line in the longitudinal direction of the light emitting region 5 of the laser, and layers 7c alloyed with the solder layer 8. The structure reduces the internal stress generated due to the difference in coefficients of the thermal expansion between the laser chip 100a and the heat sink 200a at the light emitting region 5. In other arrangements, the solder layer has a gap or is of lower melting point beneath the region 5.

Method of making optoelectronic devices using sacrificial devices

SEMICONDUCTOR LASER STRUCTURE AND MANUFACTURE

In a semiconductor laser composed of a sequence of layers forming a heterostructure diode and including a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers, two respectively differently doped semiconductor layers disposed at respectively opposite sides of the active zone, and means for constricting the current flowing in the forward direction of the diode to a narrow, strip-shaped region in the laser active zone, the improvement wherein said laser comprises a monocrystalline layer located in the layer sequence to be spaced from said active zone by one of said differently doped semiconductor layers, with the surface of said monocrystalline layer directed away from said active zone being provided with a trough-shaped recess extending essentially perpendicularly to said radiation exit face, and a doped region extending from said surface provided with said recess toward said active zone and formed by diffusion ...

Laser diode element

The invention provides a ridge waveguide type III nitride based compound semiconductor laser diode element formed with a ridge structure that comprises a first domain, including a central portion and continuing in the longitudinal direction, and a second domain, clipping to the first domain from both sides thereof and having average layer thickness smaller than that of the first domain.

Laser element

A laser element includes a transparent substrate, an adhesive layer, and a laser unit. The transparent substrate comprises a conductive layer. The adhesive layer is attached to the transparent substrate. The laser unit includes a front conductive structure, and a back conductive structure. The front conductive structure is attached to the adhesive layer. The back conductive structure is opposite to the front conductive structure, and the back conductive structure includes a plurality of detecting electrodes separated from each other. The detecting electrodes extends from the back conductive structure and penetrates through the front conductive structure and the adhesive layer; wherein the detecting electrodes is connected to the plurality of detecting electrodes and the conductive layer.

CHIP ON SUBMOUNT MODULE

CHIP ON SUBMOUNT MODULE A chip on submodule includes a submount having a top surface, bottom surface and side surfaces. A positive electrode plate is affixed to a first portion of one side surface, the top surface and a first portion of the bottom surface. The positive electrode plated first portion of the one side surface and the top surface are interconnected. A connector electrically connects the positive electrode plated top surface to the first portion of the bottom surface. A negative electrode plate is affixed to a second portion of the one side surface and a second portion of the bottom surface. The negative electrode plated second portion of the one side surface and second portion of the bottom surface are interconnected. A laser diode is affixed to the positive electrode plated first portion of the one side surface and connected to the negative electrode plated second portion of the one side surface. Figure -24- ...

Light-emitting device and method of manufacturing the same

A light-emitting device formed by easily mounting a light-emitting element onto a supporting base and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a supporting base including a depression section on a top surface thereof, the depression section having an inclined surface on a side wall thereof; a first light-emitting element arranged on a bottom surface of the depression section; and a second light-emitting element arranged on the first light-emitting element and the supporting base.

SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER MODULE, AND WELDING LASER LIGHT SOURCE SYSTEM

A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.

Infrared illumination device configured with a gallium and nitrogen containing laser source

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination ...

Semiconductor light emitting device, optical pickup unit and information recording/reproduction apparatus

A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

DIRECTLY-MODULATED LASER DIODE WITH GSG COPLANAR ELECTRODES AND MANUFACTURING METHOD THEREOF

A directly-modulated laser diode with GSG coplanar electrodes comprises a semi-insulating semiconductor substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, an insulating layer of dielectric material, a P-type electrode, and two N-type electrodes. It is characterized in that the two N-type electrodes are disposed on the N-type semiconductor layer and connected to the top of insulating layer along the sidewall to form a coplanar surface, the P-type electrode and the two N-type electrodes are GSG (ground-signal-ground) coplanar electrodes. The disclosure uses a hybrid coplanar waveguide structure with a higher direct modulation speed, and can be integrated with flip chip technology. Therefore, the disclosure reduces the signal transmission loss caused by package wiring and reduces the thermal effect caused by the device itself, and significantly improves the high frequency and photoelectric characteristics at high temperature.

ИНЖЕКЦИОННЫЙ ЛАЗЕР

Использование: в квантовой электронной технике в качестве высокоярких и высокомощных полупроводниковых инжекционных источников излучения с узкой диаграммой направленности, которые применяются в системах передачи энергии и информации на большие расстояния, в волоконно-оптических системах связи и передачи информации, при создании медицинской аппаратуры, лазерного технологического оборудования, лазеров с удвоенной частотой генерируемого излучения, а также для накачки твердотельных и волоконных лазеров. Сущность изобретения: предложено в инжекционном лазере к последнему слою лазерной гетероструктуры по крайней мере с одной стороны выполнять область вывода излучения с показателем преломления nОВ и толщиной dОВ, при этом совокупность, состоящая из лазерной гетероструктуры и присоединенной области вывода излучения, имеющая эффективный показатель преломления nэфф и область вывода излучения, охарактеризована определенными соотношениями показателей преломления nэфф и nОВ длины LОР оптического резонатора ...

Halbleiterlaserdiode und Halbleiterbauelement

Es wird eine Halbleiterlaserdiode (1) angegeben, mit- einer Halbleiterschichtenfolge (2) mit einem zur Erzeugung von Strahlung vorgesehenen aktiven Bereich (20);- einer Strahlungsauskoppelfläche (10), die senkrecht zu einer Haupterstreckungsebene des aktiven Bereichs verläuft;- einer Hauptfläche (11), die die Halbleiterschichtenfolge in vertikaler Richtung begrenzt;- einer Kontaktschicht (3), die an die Hauptfläche angrenzt; und- einer wärmeableitenden Schicht (4), die bereichsweise auf einer dem aktiven Bereich abgewandten Seite der Kontaktschicht angeordnet ist, wobei die Kontaktschicht stellenweise für eine externe elektrische Kontaktierung der Halbleiterlaserdiode freiliegt.Weiterhin wird ein Halbleiterbauelement angegeben.

Diodenlaserbauelement

Bei einem Diodenlaserbauelement besteht die Aufgabe, eine in der Wärmespreizung verbesserte passiv kühlende Wärmesenke derart zu gestalten, dass ein Diodenlaserbauelement, das eine solche Wärmesenke verwendet, thermisch symmetrisch und kompakt im Aufbau sowie universell im Einsatz ist, insbesondere die Strahlführung und die elektrische Schaltungstechnik betreffend. DOLLAR A Die Wärmesenke (1), die auf einer Montagefläche (3) einen Diodenlaserbarren (2) trägt, enthält einen die Montagefläche (3) an allen Rändern umgebenden stofflich geschlossenen Bereich zur Wärmespreizung. Ausnehmungen zur Elementbefestigung sind außerhalb des Bereiches zur Wärmespreizung in die Wärmesenke (1) eingearbeitet.

Halbleiterlaserdiode

Es wird eine Halbleiterlaserdiode angegeben, mit – einem Halbleiterkörper (2) umfassend einen Emitterbereich (5), und – ein erstes Anschlusselement (3), welches den Halbleiterkörper (2) im Emitterbereich (5) elektrisch kontaktiert, wobei – der Halbleiterkörper (2) im Emitterbereich (5) in Kontakt mit dem ersten Anschlusselement (3) steht, und – der Halbleiterkörper (2) im Emitterbereich (5) zumindest stellenweise eine Strukturierung (26) aufweist, welche eine Kontaktfläche (28) zwischen dem Halbleiterkörper (2) und dem ersten Anschlusselement (3) vergrößert.

A MULTI-POINT EMISSION TYPE SEMICONDUCTOR LASER DEVICE AND PRODUCTION METHOD THEREOF

DIODE LASER DIODE WITH BAR TRANSVERSE ELECTROMAGNETIC WAVE

Laser grid structures for wireless high speed data transfers

Disclosed herein are various embodiments for high performance wireless data transfers. In an example embodiment, laser chips are used to support the data transfers using laser signals that encode the data to be transferred. The laser chip can be configured to (1) receive a digital signal and (2) responsive to the received digital signal, generate and emit a variable laser signal, wherein the laser chip comprises a laser-emitting epitaxial structure, wherein the laser-emitting epitaxial structure comprises a plurality of laser-emitting regions within a single mesa structure that generate the variable laser signal. Also disclosed are a number of embodiments for a photonics receiver that can receive and digitize the laser signals produced by the laser chips. Such technology can be used to wireless transfer large data sets such as lidar point clouds at high data rates.

FLIP CHIP TYPE LASER DIODE

Transmission device with plastic optical fiber

A transmission device is disclosed which comprises of plastics optical fiber and the semiconductor light emitter having the predeter mined relationship between the wave length of the emitted light and the temperature, the transmission device can be made with low cost and low transmission loss. The transmission device of the present invention consists of the PMMA plastic optical fiber 3 and the semiconductor light emitter 5 emitting the light 9 which transmitted within the plastic optical fiber 3, the semiconductor light emitter 5 emitting the light 9 having the wave length in the range of 630~ 680nm. The temperature regulator also equipped which comprises of : the heater 7 for heating the semiconductor light emitter 5; the temperature detector 4 for detecting the temperature of the semiconductor light emitter 5; and the controller 8 for controlling the driving of the heater 7 according to the temperature detecting signal S outputted from the temperature detect or 4, and setting the temperature ...

Ridge waveguide semiconductor laser diode

In the ridge waveguide semiconductor laser diode of the present invention, a novel laser device is provided to prevent abnormal laser characteristics and deterioration of lifetime characteristics occurred during installation. The ridge waveguide semiconductor laser diode comprises: a p-type semiconductor layer 14 having a ridge-forming waveguide 14a; a protective insulating layer 17 covering the ridge so as to expose at least a portion of a top face of the ridge; a p-side ohmic electrode 15 in ohmic contact with the portion of the ridge; a p-side pad electrode 19 disposed so as to electrically connect to the p-side ohmic electrode; and a diffusion-prevention layer 30 to prevent metal with low melting-point from diffusion is formed between the p-side ohmic electrode and the p-side pad electrode. The diffusion-prevention layer covers at least the ridge-like part 14a exposed from the protective insulation film 17. By using the diffusion-prevention layer to inhibit the metal with low melting ...

Method of making an optoelectronic device using multiple etch stop layers

This invention provides a method for making interdigitated optoelectronic devices in which the surfaces of the photonic devices, emitters and detectors, are protected from contaminants during processing through the use of multiple etch stop layers.

Superlattice strain relief layer for semiconductor devices

A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.

Semiconductor laser device and method of fabricating the same

A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

Semiconductor laser diode and method for manufacturing a semiconductor laser diode

A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment a semiconductor laser diode includes an epitaxially produced semiconductor layer sequence comprising at least one active layer and a gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence.

Multi-laser package using shared optics

An optical device may include a semiconductor laser chip to independently generate four laser beams at different wavelengths. Each laser beam, of the four laser beams, may be directed to a respective optical output of the optical device with a sub-micron level of tolerance of each laser beam relative to the respective optical outputs of the optical device, and each laser beam, of the four laser beams, may be associated with a different optical path from the semiconductor laser chip to the respective optical output of the optical device. The optical device may include a lens to receive each of the four laser beams. The lens may be positioned to direct each laser beam, of the four laser beams, toward the respective optical output of the optical device. The optical device may include an optical isolator to receive each of the four laser beams.

QUANTUM CASCADE SEMICONDUCTOR LASER

A quantum cascade semiconductor laser includes a substrate with a main surface including a waveguide area and a distributed Bragg reflection area that are arranged in a direction of a first axis; a laser region provided on the waveguide area, the laser region including a mesa waveguide having first and second side surfaces, and first and second burying regions provided on the first and second side surfaces, respectively; a distributed Bragg reflection region provided on the distributed Bragg reflection area, the distributed Bragg reflection region including a semiconductor wall having first bulk semiconductor regions and first laminate regions that are alternately arrayed in a direction of a second axis intersecting the first axis; and an upper electrode provided on the laser region. Each first bulk semiconductor region includes a bulk semiconductor layer. Each first laminate region includes a stacked semiconductor layer having a plurality of semiconductor layers.

LASER RADAR

Disclosed herein is a system comprising: an optical system with a focal plane; an apparatus at the focal plane; a filter; wherein the apparatus comprises an array of vertical-cavity surface-emitting lasers (VCSELs) on a first substrate and an array of detectors on a second substrate, the detectors configured to detect laser beams that are emitted by the VCSELs and backscattered by an object; wherein the first substrate is mounted to the second substrate and is configured to allow the laser beams that are emitted by the VCSELs and backscattered by the object to transmit through the first substrate and reach the detectors; wherein the filter is configured to prevent light other than the laser beams from passing.

Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof

A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above.

LASER LIGHT SOURCE MODULE

A heat sink is made of a material excellent in thermal conductivity and is mounted on a stem; a sub-mount substrate is made of a material excellent in insulation property and is mounted on the heat sink; a first lead frame made of a material excellent in electric conductivity and thermal conductivity and having a linear expansion coefficient similar to that of a semiconductor laser array, is mounted on the sub-mount substrate, having the semiconductor laser array mounted thereon, and composing a power feeding path of the semiconductor laser array; a second lead frame made of a material excellent in electric conductivity and thermal conductivity, is arranged on the sub-mount substrate side by side with the first lead frame, and composing the power feeding path of the semiconductor laser array; and a wire electrically bonds the semiconductor laser array and the second lead frame.

LIGHT EMITTING DEVICE

A light emitting device includes: a base member; a laser element disposed on or above a mounting surface of the base member; a fluorescent member including a first main surface and a second main surface respectively positioned on opposite sides of the fluorescent member, the second main surface being fixed to the mounting surface of the base member; a first optical member configured to change a traveling direction of laser light emitted by the laser element to be directed toward the first main surface of the fluorescent member; and a lid connected to the base member and enclosing the laser element, the fluorescent member, and the first optical member in a space beneath the lid, the lid being configured to transmit light from the fluorescent member.

СПОСОБ ИЗГОТОВЛЕНИЯ ОПОРНОЙ СТРУКТУРЫ ДЛЯ ПОЛУПРОВОДНИКОВОГО УСТРОЙСТВА

... 1. Способ изготовления полупроводникового устройства, включающий в себя выбор исходной полупроводниковой подложки, имеющей некоторую плотность дефектов; формирование полупроводникового слоя на упомянутой исходной полупроводниковой подложке; формирование активных компонентов на упомянутом полупроводниковом слое; и удаление упомянутой исходной полупроводниковой подложки. 2. Способ по п.1, дополнительно включающий в себя регулирование уровня легирования упомянутого полупроводникового слоя. 3. Способ по п.2, в котором упомянутый уровень легирования является однородным для всего полупроводникового слоя. 4. Способ по п.1, в котором упомянутую исходную полупроводниковую подложку и упомянутый полупроводниковый слой выполняют из GaAs. 5. Способ по п.1, в котором упомянутую исходную полупроводниковую подложку выполняют из GaAs, а упомянутый полупроводниковый слой выполняют путем эпитаксиального выращивания монокристаллического материала. 6. Способ по п.5, в котором упомянутый полупроводниковый слой ...

Halbleiterlaserdiodenvorrichtung

Halbleiterlaservorrichtung mit einem Halbleiterlaserchip und Verfahren zu dessen Herstellung

Halbleiterlaservorrichtung mit mindestens einem Halbleiterlaserchip (1), wobei der Halbleiterlaserchip (1)- eine aktive Schicht enthält, die elektromagnetische Strahlung emittiert,- eine laterale Ausdehnung (B) von höchstens 100 µm aufweist,- auf einem Submount (2) angeordnet ist,- der Halbleiterlaserchip (1) in einer Ausnehmung (21) des Submounts (2) angeordnet ist, sodass die Ausnehmung (21) eine obere Stufe des Submounts (2) bildet,- der Submount (2) eine weitere, untere Stufe aufweist, sodass der Halbleiterlaserchip (1) über die obere Stufe herausragt und sodass eine Strahlungsauskoppelfacette (14) des Halbleiterlaserchips (1) freiliegend ist und sich in Draufsicht gesehen über der unteren Stufe befindet, wodurch im Betrieb des Halbleiterlaserchips (1) eine Abschattung von Laserlicht durch den Submount (2) vermieden ist, und- der Halbleiterlaserchip (1) die Ausnehmung (21) seitlich an nur einer Seite überragt.

Semiconductor laser array

Semiconductor lasers

A terraced semiconductor laser comprising semiconductor layers (10, 11, 12) including an active layer (11) formed on a terraced semiconductor substrate (9) in a manner to have an inclined part (111) ranging from the position above said step to the part shifted to the side of said thinner part, an overriding layer (13) having the opposite conductivity type to that of the uppermost layer (12) of said semiconductor layers (10, 11, 12) and formed on said uppermost layer (12), characterized by further comprising: a last layer (14) having the same conductivity type to that of the overriding layer (13) formed on the latter layer (13), said last layer (14) having a stripe-shaped through-opening (141) at the position which is a shifted position from the part immediately above said inclined part 111, thereby exposing a surface of said overriding layer (13) at the bottom of the through-opening (141), a conduction region (15) formed at least on the bottom and side faces of said stripe-shaped opening ...

Measuring the position of passively aligned optical components

Semiconductor laser array

DIODE LASER DEVICE

MOUNTING OF AN OPTICAL ELEMENT AT A RADIATOR BOX

Heat sink base, heat sink, and method of manufacturing heat sink

TUNABLE HYBRID III-V/ IV LASER SENSOR SYSTEM-ON-A-CHIP FOR REAL-TIME MONITORING OF A BLOOD CONSTITUENT CONCENTRATION LEVEL

A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGalnAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates ...

SEMICONDUCTOR LASER LIGHT SOURCE

A semiconductor laser light source includes a semiconductor laser (1), and a sub-mount (2). The sub-mount (2) includes a sub-mount substrate (20), an Au layer (22) placed above the sub-mount substrate (20), a barrier layer (23) which is placed on the Au layer (22) and has a barrier portion (23b) at least in a portion of its outer peripheral portion which is other than a portion corresponding to a side of an output end of the semiconductor laser (1), and a solder layer (25) placed on the barrier layer in an area surrounded by the barrier portion (23b), wherein the semiconductor laser (1) is bonded to the sub-mount (2) through the solder layer (25), in a state where the semiconductor laser (1) is spaced apart by a predetermined interval from an inner surface of the barrier portion (23b), and further, the output end protrudes, in a direction of output of the laser light, from an end of the solder layer (25) which corresponds to the side of the output end of the semiconductor laser (1).

SEMICONDUCTOR LASER DEVICE AND METHOD OF MAKING SAME

A semiconductor laser device includes a laser chip and a submount. The laser chip includes a mesa-shaped semiconductor substrate having a surface on which a plurality of layers required for generating laser oscillations are epitaxially grown to be conformal to the surface contour of the substrate. The laser chip is soldered upside down to the submount. If solder rises up along the side surfaces of the laser chip, it does not short-circuit a PN junction contained in the epitaxially grown layers.

Method for manufacturing semiconductor light-emitting element

A method for manufacturing a semiconductor light-emitting element, which comprises a semiconductor layer forming step, a bonding step, a groove forming step, a light irradiation step, a separation step and a cutting step. In the semiconductor layer forming step, a nitride semiconductor laminate layer is formed on the upper surface of a light-transmitting first wafer. In the bonding step, a second wafer is bonded to the upper surface of the nitride semiconductor laminate layer. In the groove forming step, a groove having a depth reaching from the lower surface of the first wafer to the nitride semiconductor laminate layer is formed. In the light irradiation step, the lower surface of the nitride semiconductor laminate layer is irradiated with first light through the first wafer, thereby lowering the bonding force between the nitride semiconductor laminate layer and the first wafer. In the separation step, the first wafer is separated from the nitride semiconductor laminate layer. In the ...

Group III nitride compound semiconductor laser and manufacturing method thereof

A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0<=x<=1, 0<=y<=1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx'Ga1-x'-y'Iny'N (0<=x'<=1, 0<=y'<=1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx''Ga1-x''-y''Iny''N (0<=x''<=1, 0<=y''<=1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0<=u<=1, 0<=v<=1) and deposited on the electrode-side guide layer.

Double hetero-type semiconductor laser device

A semiconductor laser device having: a substrate of a first conductivity type; a first clad layer of the first conductivity type formed on the substrate; an active layer formed on the first clad, the active layer being of either one of the first conductivity type and a second conductivity type opposite to the first conductivity type; a second clad layer of the second conductivity type formed on the active layer; a current block layer of the first conductivity type formed on the second clad layer; and an ohmic layer of the second conductivity type formed on the current block layer, wherein the end portion of the ohmic layer covers the side face of the second clad layer at least to some depth, at a pair of side faces of the semiconductor laser device of a double hetero type having a crystal cleavage face at least at a pair of faces substantially perpendicular to the faces of the substrate.

Violet and ultraviolet illumination device configured with a gallium and nitrogen containing laser source

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination ...

LASER DIODE

A laser diode which can be easily assembled at low material cost is provided. A first light emitting device having a laser structure on a substrate, a second light emitting device having laser structures on a substrate, and a support base are provided. The first light emitting device and the second light emitting device are layered in this order on the support base in a manner that the respective laser structures of the first light emitting device and the second light emitting device are opposed to each other. A substrate side of the first light emitting device and a laser structure side of the second light emitting device are electrically connected to the support base.

Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material

A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

MANUFACTURABLE VERTICAL EXTENDED CAVITY SURFACE EMITTING LASER ARRAYS

Arrays of vertical extended cavity surface emitting lasers (VECSELs) are disclosed. The functionality of two or more conventional optical components are combined into an optical unit to reduce the number of components that must be aligned during packaging. A dichroic beamsplitter selectively couples frequency doubled light out of the cavity. In one implementation the dichroic beamsplitter includes at least one prism.

Multi-channel optical module and manufacture method thereof

Provided herein is a multi-channel optical module including a plurality of laser diodes emitting light with different wavelengths, a thermoelectric cooling device including the plurality of laser diodes, a TO-can including the thermoelectric cooling device, and a holder combined with the TO-can and including a plurality of optical lenses focusing the light with different wavelengths and a multiplexer gathering focused light into a single optical fiber, wherein the holder has a shape in which the TO-can is cut along an axis of a path of the light with different wavelengths for active alignment of the plurality of optical lenses.

Semiconductor laser element

To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.

Integrated unit, optical pickup, and optical recording medium drive device

The medium of a disk for CD-R is a pigmentation material so readout by a 650-nm laser diode (LD) is not possible. Since CD-R is becoming popular in the marketplace, there are demands for a DVD readout device that is capable of reading CD-R format disks. An integrated semiconductor laser element is created by forming a two-wavelength LD monolithically on a GaAs substrate, and that laser element emits a laser beam that is reflected by a 45° mirror incorporated in a flat package.If a three-part holographic element is used, and the light-receiving element and an amplification circuit are integrated on a silicon substrate, it is possible to implement a small, light-weight optical pickup with fewer components.

Method and apparatus reducing electrical and thermal crosstalk of a laser array

Active compensation techniques are used for control of temperature, wavelength, and other characteristics of lasers within a laser array. The laser array includes a plurality of lasers and a plurality of dissipation elements. The dissipation elements can be interstitial to the lasers and can be implemented as non-lasing diodes. The dissipation elements are selectively activated (i.e., turned "on" to dissipate power) to adjust the temperature at the laser junctions. The change in junction temperature allows the lasers to operate at their specified wavelengths. The dissipation elements can be individually controlled and two or more bits of resolution can be provided. Active compensation can be used to adjust (i.e., to compensate) the temperature of selected lasers when one or more lasers are deselected. Active compensation can also be used to adjust (i.e., "tweak") the wavelengths of the lasers within the laser array to be within their specified wavelengths.

Method for patterning a sequence of layers and semiconductor laser device

A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.

III-NITRIDE SURFACE-EMITTING LASER AND METHOD OF FABRICATION

A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

Device with Inverted Large Scale Light Extraction Structures

An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

ANGLED FLIP-CHIP BUMP LAYOUT

In some implementations, an optical device for mounting in a flip-chip configuration includes a plurality of flip-chip bumps that are arranged in a pattern on the optical device, wherein the pattern is not aligned with a crystal cleavage plane associated with a substrate of the optical device. In some implementations, the optical device further includes a gap that separates a primary region of the optical device and a secondary region of the optical device, wherein at least one portion of a side of the gap is oriented at a non-zero angle to the crystal cleavage plane.

Serially interconnected vertical-cavity surface emitting laser arrays

Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.

Light emitting device and package component

A light emitting device includes a light emitting element mounting component, including a cubic package component formed of a silicon member covered with a insulating layer, and the package component including a bottom portion, a sidewall portion provided to stand upright on both ends of the bottom portion respectively, and a backwall portion provided to stand upright on an innermost part of the bottom portion, and the package component in which a cavity is provided in an inner side, and a light emitting element mounted on an inner side surface of the backwall portion of the package component, and including a light emitting surface on an upper end part, wherein a plurality of said light emitting element mounting components are stacked in a depth direction of the cavity to direct toward an identical direction.

Optical module

There are provided an optical module including a semiconductor laser including a P-side electrode and an N-side electrode, and a semiconductor laser driver circuit that drives the semiconductor laser so as to output an optical signal from the semiconductor laser according to a pattern of a differentially transmitted digital electric signal, and the semiconductor laser driver circuit includes a positive-side terminal and a negative-side terminal for differentially transmitted non-inverted data, and a positive-side terminal and a negative-side terminal for differentially transmitted inverted data, and one terminal for the non-inverted data is electrically connected to one electrode of the semiconductor laser, and the other terminal for the non-inverted data, one terminal for the inverted data and the other terminal for the inverted data each are connected to the other electrode of the semiconductor laser.

Semiconductor light emitting device, optical pickup unit and information recording/reproduction apparatus

A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Optical coupling element and method of manufacturing the same

According to one embodiment, an optical coupling element comprises an optical waveguide, a ferrule provided with a holding hole which holds the optical waveguide, electrical read frame formed on the element mounting surface of the ferrule, an optical semiconductor element which is mounted on the element mounting surface of the ferrule and connected to the electrical read frame, and a transparent adhesive which fills the gap between the optical semiconductor element and the optical waveguide. At least one side of the optical semiconductor element partially falls within a region obtained by extending the holding hole in the ferrule toward the optical semiconductor element.

Semiconductor laser module and manufacturing method thereof

To reduce the stress imposed on an LD chip and to sufficiently secure the heat radiation property of the LD chip. An LD module includes a PLC board, an LD chip, and a solder bump. The PLC board includes a PLC electrode. The LD chip includes an LD electrode, and a stripe-form active layer formed in an inner part adjacent to the LD electrode. The solder bump bonds the PLC electrode and the LD electrode by being disposed only in a part right under the active layer.

Light projection unit and light projection apparatus

A light projection unit capable of improving light use efficiency is provided. This light projection unit includes: a fluorescent member that includes an illuminated surface to which laser light is directed, converts at least part of the laser light into fluorescent light and outputs the fluorescent light from chiefly the illuminated surface; and a reflection member that includes a first reflection surface which reflects the fluorescent light output from the fluorescent member. The illuminated surface of the fluorescent member is inclined with respect to a predetermined direction in such a way that the illuminated surface faces in a direction opposite to a light projection direction.

Light projection unit and light projection device

A light projection unit is provided that can reduce the production of a portion where the light density is excessively increased on a fluorescent member. This light projection unit includes: a light collection member that includes a light entrance surface and a light emission surface which has an area smaller than that of the light entrance surface; a fluorescent member that includes an application surface to which the laser light emitted from the light collection member is applied and that mainly emits fluorescent light from the application surface; and a light projection member that projects the fluorescent light. The light emission surface of the light collection member is arranged a predetermined distance from the application surface of the fluorescent member.

Means for improved implementation of laser diodes and laser diode arrays

A laser diode system is disclosed in which a substrate made of a semiconductor material containing laser diodes is bonded to a substrate made from a metallic material without the use of any intermediate joining or soldering layers between the two substrates. The metal substrate acts as an electrode and/or heat sink for the laser diode semiconductor substrate. Microchannels may be included in the metal substrate to allow coolant fluid to pass through, thereby facilitating the removal of heat from the laser diode substrate. A second metal substrate including cooling fluid microchannels may also be bonded to the laser diode substrate to provide greater heat transfer from the laser diode substrate. The bonding of the substrates at low temperatures, combined with modifications to the substrate surfaces, enables the realization of a low electrical resistance interface and a low thermal resistance interface between the bonded substrates.

Semiconductor laser mounting with intact diffusion barrier layer

A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits

Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate.

Semiconductor laser assembly and method for producing a semiconductor laser assembly

A semiconductor laser assembly has at least one semiconductor laser which is designed to emit laser radiation through an exit area and at least one further area, the further area being a part of a surface of the semiconductor laser and/or of the semiconductor laser assembly and the further area is developed to be reflecting to the radiation of at least one specifiable wavelength range. For this purpose, a reflecting metal layer is applied, for example. The semiconductor laser having a laser layer is able to be fastened to a carrier element with the aid of a solder layer.

Semiconductor light emitting device and light emitting apparatus

A semiconductor light emitting device includes a nitride semiconductor layer, an insulating film, a first electrode, and a second electrode which are provided on a substrate. The nitride semiconductor layer includes a second cladding layer having a stripe-shaped ridge. The insulating film is provided on a portion of the second cladding layer including the at least one ridge. The first electrode is provided to contact the upper surface of the ridge. The second electrode is provided to contact the upper surface of the first electrode, the upper surface of the insulating film, and a portion of the second cladding layer exposed from the insulating film.

Directly Modulated Laser for PON Applications

In an embodiment, a distributed Bragg reflector (DBR) laser includes a gain section and a passive section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm. The passive section is coupled to the gain section, the passive section having a DBR in optical communication with the active region.

Photonic package architecture

A photonic package includes a photonic device having a photon emitter on the front side of the die. A beam of photons from the photon emitter passing from the front side to the backside of the die, passes through the substrate material of the die which is substantially transparent to the beam of photons, to the backside of the die. Other embodiments are also described.

Mounting component, semiconductor device using same, and manufacturing method thereof

A mounting component includes a main body and a metal layer. The main body has a first main surface and a second main surface. The metal layer is arranged on the first main sur face of the main body. The metal layer includes at least one concave recognition mark having an inclined surface that is inclined with respect to a main surface of the metal layer.

AlGaInP-BASED SEMICONDUCTOR LASER

An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (Al x Ga 1-x ) 0.5 In 0.5 P, a composition of the n-type cladding layer is expressed as (Al xn Ga 1-xn ) 0.5 In 0.5 P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (Al xp Ga 1-xp ) 0.5 In 0.5 P (0.9<xp≦1), and xn and xp satisfy a relationship of xn<xp.

Package for mounting light-emitting device

A light-emitting device mounting package includes a substrate, a lead pin supported on the substrate, and an insulating member having a facing front surface which faces the front surface of the substrate and a facing back surface. The substrate has a first through hole and the ceramic plate has a second through hole. The lead pin has a shaft portion which penetrates the first and second through holes, a head portion provided at one end of the shaft portion, and a collar portion which extends from the shaft portion in the radial direction. The lead pin is fixed, via the collar portion, to a region of the facing back surface of the ceramic plate around an opening of the second through hole, and the ceramic plate is fixed to a region of the front surface of the substrate around an opening of the first through hole.

Optical module

An optical module includes a package including a first member made of a metal material and a second member made of a non-conductive material, the second member facing the first member; a temperature controller fixed in such a manner that one end surface of the temperature controller comes into contact with a surface in a direction of the second member in the first member; a carrier made of a non-conductive material and fixed in such a manner that one end surface of the carrier comes into contact with a surface in an opposite direction to the first member in the temperature controller; and a semiconductor element disposed in either one of a direction of the first member and the opposite direction to the first member with respect to the carrier, and fixed in such a manner that one end surface of the semiconductor element comes into contact with a surface in a direction of the first member in the carrier or a surface in the opposite direction to the first member in the carrier, or in such a manner that one end surface of the semiconductor element comes into contact with a surface in the opposite direction to the carrier in a submount made of a non-conductive material and fixed in such a manner that the submount comes in contact with a surface in a direction of the first member in the carrier or a surface in the opposite direction to the first member in the carrier.

Semiconductor Device and Method

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

Projector, electronic device having projector and associated manufacturing method

The present invention provides a projector including a substrate, a laser module and a lens module. The laser module is positioned on the substrate, and a laser diode of the laser module is not packaged within a can. The lens module is arranged for receiving a laser beam from the laser diode of the laser module to generate a projected image of the projector.

Infrared illumination device configured with a gallium and nitrogen containing laser source

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

Semiconductor laser device

A semiconductor laser device is configured so that, on at least one of the respective opposing surfaces of a semiconductor laser chip and a sub-mount and the respective opposing surfaces of the sub-mount and a heatsink, one or more treatment regions are provided where adhesion of a bonding material or bonding material used for their bonding is reduced, wherein the one or more treatment regions are placed to define, in a traveling direction of light, different coverages depending on a position in an array direction of multiple light emitting regions.

Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

Surface emitting laser and method of manufacturing the same

A surface emitting laser includes a lower reflector layer, an active layer , an upper reflector layer , and a wiring. The lower reflector layer, the active layer, and the upper reflector layer form a mesa, a terrace, and a connecting portion. A first groove is provided between the mesa and the terrace. The connecting portion connects the mesa and the terrace, and extends in a direction inclined from <011> direction of the substrate. A high-resistance region is formed in the terrace, in the connecting portion, and in a peripheral portion of the mesa. The wiring is provided on top surfaces of the terrace, the connecting portion, and the mesa. The mesa includes an oxide region extending from a side surface of the mesa and a current confinement structure including an aperture surrounded by the oxide region.

Macro-channel water-cooled heat-sink for diode-laser bars

A diode-laser bar is mounted on water-cooled heat-sink between two ceramic sub-mounts for electrically isolating cooling-water in the heat-sink from the diode-laser bar. Mounting between the two ceramic sub-mounts also provides for balancing stresses due to differences in coefficient of thermal expansion (CTE) between the sub-mounts and the diode-laser bar. Both sub-mounts are in thermal communication with the heat-sink for providing two-sided cooling of the diode-laser bar.

LASER PROJECTION MODULE AND TERMINAL DEVICE

A laser projection module includes a base, a laser chip, an optical element, and a first conducting wire. The base has an inner cavity and an opening connected to the inner cavity, the laser chip is disposed on a bottom wall that is of the inner cavity and that faces the opening, the optical element is mounted in the opening, a wire layer is disposed on the optical element, and the laser chip, the first conducting wire, and the wire layer are sequentially connected in series. 1. A laser projection module , comprising a base , a laser chip , an optical element , and a first conducting wire , wherein the base has an inner cavity and an opening connected to the inner cavity , the laser chip is disposed on a bottom wall that is of the inner cavity and that faces the opening , the optical element is mounted in the opening , a wire layer is disposed on the optical element , and the laser chip , the first conducting wire , and the wire layer are sequentially connected in series.2. The laser projection module according to claim 1 , wherein the opening of the base has a step surface claim 1 , and the optical element is fixedly bonded to the step surface.3. The laser projection module according to claim 2 , wherein a first pad is disposed on the step surface claim 2 , and the wire layer is electrically connected to the first conducting wire through the first pad.4. The laser projection module according to claim 3 , wherein the first pad is fixedly bonded to the wire layer through a first adhesive connecting portion claim 3 , and the first adhesive connecting portion is a first conductive adhesive layer.5. The laser projection module according to claim 4 , wherein the step surface is fixedly bonded to an edge of the optical element through a second adhesive connecting portion.6. The laser projection module according to claim 1 , wherein a second pad is disposed on the bottom wall claim 1 , the laser chip is fixed on the second pad claim 1 , and the laser chip is electrically ...

Semiconductor laser device and method for manufacturing same

A semiconductor laser device (1) includes a heat sink (20), a submount (30), a first electrode (60), an insulating layer (70), a semiconductor laser element (40), a connecting portion (50), and a second electrode (61). The submount (30) is conductive and on a first region (R1) of the upper surface of the heat sink (20). The first electrode (60) is conductive and on a second region (R2), different from the first region (R1), of the upper surface of the heat sink (20). The first electrode (60) is electrically connected either to at least part of a side surface of the submount (30) or to the upper surface of the submount (30).

Tunable laser source, optical transmitter, and optical transmitter and receiver module

A tunable laser source includes a mirror, a tunable filter, and a semiconductor optical amplifier integrated device including first, second, and third semiconductor optical amplifiers between a first end face facing toward the tunable filter and a second end face facing away from the first end face. The first amplifier is closer to the first end face than the second and third amplifiers. The semiconductor optical amplifier integrated device further includes a partially reflecting mirror and an optical divider that are disposed between the first amplifier and the second and third amplifiers. The partially reflecting mirror is closer to the first amplifier than the optical divider. The optical divider includes first and second branches connected to the second and third semiconductor optical amplifiers, respectively. The tunable filter and the first amplifier are disposed in an optical path between the partially reflecting mirror and the mirror that form a laser resonator.

Header for an electric component

A header for electronic components is provided. The header has a base with at least two electrical feedthroughs each having a feedthrough pin extending through the base and being electrically isolated to the base within the feedthrough. The further includes at least one pedestal connected to the base and two submounts. Each submount includes a carrier with a structured conductor plating that has at least two conductor traces with one of the conductor traces of each submount being electrically connected to one of the feedthrough pins. The submounts are equally formed but mounted in different orientations.

TRANSISTOR OUTLINE HEADER FOR HIGH-SPEED DATA TRANSMISSION OF OPTOELECTRONIC APPLICATIONS

A header for opto-electronic applications is provided. The header includes a header base with a back face, a front face, and opening that extends from the back face through the base to the front face. The opening accommodates an electrically isolated pin through the opening. A pedestal is arranged at the front face and is below a center of the opening. The pedestal has a mounting face and a free face, which opposes the mounting face. The pedestal further includes an upper surface for mounting and carrying a pedestal submount. The mounting face is fixedly attached to the front face with an electrically conductive material that is at least partially arranged between the front face and the mounting face. An electrically isolating material is arranged in the opening between the base and the pin to electrically isolate the pin from the base.

Method of manufacturing light emitting device

A method of manufacturing a light emitting device comprising: providing an element-structure wafer having a first substrate and a laser element structure on the first substrate, the laser element structure having ridges on a side opposite to the first substrate and raising layers respectively formed above the ridges; bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer; removing at least a portion of the first substrate to obtain a thinned bonded wafer; singulating the thinned bonded wafer to obtain a laser element with the second substrate; mounting the laser element with the second substrate on a heat dissipating member such that a laser element side of the laser element with the second substrate faces the heat dissipating member; and removing the second substrate from the laser element.

Meta projector and electronic apparatus including the same

A meta projector is provided, including an edge emitting device configured to emit light through a side surface thereof, a meta-structure layer spaced apart from the upper surface of the edge emitting device that includes a plurality of nanostructures having a sub-wavelength dimension smaller than a wavelength of the light emitted from the edge emitting device, and a path changing member configured to change a path of the light emitted from the edge emitting device so as to direct the path toward the meta-structure layer. The meta projector may thus be configured to emit a light pattern of structured light, based on directing the light emitted from the edge emitting device through the meta-structure layer.

MANUFACTURABLE RGB LASER DIODE SOURCE AND SYSTEM

A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength. 137.-. (canceled)38. An integrated multi-wavelength light emitting device , the device comprising:at least one of a first plurality of epitaxial dice, a second plurality of epitaxial dice, and a third plurality of epitaxial dice transferred, respectively, from a first substrate, a second substrate, and a third substrate to a carrier wafer by subjecting a release region to an energy source, separating from each of the first substrate, the second substrate, and the third substrate each of the first epitaxial dice, the second epitaxial dice, and the third epitaxial dice that is being transferred, and selectively bonding to the carrier wafer each of the first epitaxial dice, the second epitaxial dice, and the third epitaxial dice that is being transferred; andwherein the transferred first epitaxial dice, the second epitaxial dice, and the third epitaxial dice on the carrier wafer are processed to form an RGB emitting devices capable of emitting a red wavelength, a green wavelength, and a blue wavelength.39. The method of claim 38 , wherein the integrated multiple wavelength light emitting device is an ...

Optical module

An optical module includes a base portion having a top-surface metal layer on a top surface of a base, a semiconductor element on the top-surface metal layer and an optical element optically-coupled to the semiconductor element and bonded to the base with adhesive at a first side surface of the base at a side of the optical element being optically-coupled. A pull-back area is formed on the top surface by disposing a second side surface at the side, of the top-surface metal layer at a retracted position to the first side surface at the side. Between an adhesion area where the base and the optical element are bonded and a mounting portion below an optical-power-outputting surface of the semiconductor element, the top-surface metal layer has an adhesive flow stopping portion formed, by patterning, so as to prevent the adhesive from flowing through the pull-back area to the mounting portion's side.

Decoupling layer to reduce underfill stress in semiconductor devices

An integrated circuit assembly includes a support (e.g., package substrate or circuit board) and a semiconductor die including a device. The semiconductor die is mounted to the support with the device facing the support. The device can be, for example, a quantum well laser device or a photonics device. A layer of decoupling material is on the device. An underfill material is between the semiconductor die and the support, where the decoupling material is between the device and the underfill material. The decoupling layer decouples stress from transferring from the underfill material into the device. For example, the decoupling material forms only weak bonds with the underfill material and/or a passivation layer on the device, in an embodiment. Weak bonds include non-covalent bonds and non-ionic bonds, for example. The decoupling material can be, for instance, a PTFE film, a poly(p-xylylene) film, a fluorocarbon, or a compound lacking free hydroxyl groups.

Broadband Electro-Absorption Optical Modulator Using On-Chip RF Input Signal Termination

An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

Semiconductor laser element, methods of manufacturing the same and semiconductor laser device

A method of manufacturing a plurality of semiconductor laser elements having; preparing the semiconductor wafer; forming grooves that extend along second lines on a first main surface side of the semiconductor wafer, and forming a first texture pattern along second lines on a bottom surface of the grooves, the second lines being parallel to a cavity length direction; forming a second texture pattern along the second lines by covering at least part of the first texture pattern with a protective film; and splitting the semiconductor wafer along first lines, the first lines being parallel to a cavity width direction, and splitting along the second lines using a second main surface, which is an opposite side of the first main surface, of the semiconductor wafer as an origin.

Light-emitting element module, atomic oscillator, and electronic apparatus

A light-emitting element module includes: a Peltier device that includes a first substrate, and a second substrate causing a temperature difference from the first substrate, and a power terminal disposed on the first substrate; a light-emitting element that is disposed on a side of the second substrate of the Peltier device and of which temperature is adjusted by the Peltier device; a temperature sensor that is disposed on the side of the second substrate of the Peltier device; a package that includes a base and a lid; a first external electrode that is electrically connected to the power terminal; a second external electrode that is electrically connected to the temperature sensor; and a third external electrode that is electrically connected to the light-emitting element. The third external electrode is disposed between the first and second external electrodes.

Light-emitting element module, atomic oscillator, and electronic apparatus

A light-emitting element module includes a light-emitting element that emits light, a base that has a depression portion in which the light-emitting element is accommodated, and a lid that covers an opening of the depression portion and is joined to the base. The lid includes a protrusion portion that protrudes on an opposite side to the base and has a hole through which the light passes and a window that is installed in the protrusion portion to block the hole and transmits the light. A surface of the window on a side of the light-emitting element is inclined with respect to a surface perpendicular to an optical axis of the light.

Atomic oscillator, and electronic apparatus

An atomic oscillator includes: an atomic cell in which an alkali metal is sealed; a light-emitting element that emits light to be radiated to the atomic cell; a light-receiving element that detects the light transmitted through the atomic cell; a first optical element that has light transmittance and is disposed between the atomic cell and the light-emitting element; and a second optical element that has light transmittance and is disposed between the first optical element and the atomic cell. The first optical element reflects the light from the light-emitting element toward the light-emitting element in a first direction inclined with respect to an optical axis of the light. The second optical element reflects the light from the light-emitting element toward the light-emitting element in a second direction inclined in a direction different from the first direction with respect to the optical axis of the light.

Transistor outline housings for distributed feedback lasers

A transistor outline (TO) housing comprising a base part having a mounting area for a thermoelectric cooler, wherein the base part has at least two feedthroughs for connecting an optoelectronic component. A support extends from the upper surface of the base part, which support has at least two conductor traces arranged thereon, each of which is connected to a respective one of the feedthroughs for connecting the optoelectronic component.

High speed free-space optical communications

High power, high speed VCSEL arrays are employed in unique configurations of arrays and sub-arrays. Placement of a VCSEL array behind a lens allows spatial separation and directivity. Diffusion may be employed to increase alignment tolerance. Intensity modulation may be performed by operating groups of VCSEL emitters at maximum bias. Optical communications networks with high bandwidth may employ angular, spatial, and/or wavelength multiplexing. A variety of network topologies and bandwidths suitable for the data center may be implemented. Eye safe networks may employ VCSEL emitters may be paired with optical elements to reduce optical power density to eye safe levels.

Semiconductor laser element and method of making semiconductor laser device

A semiconductor laser element includes an inclined substrate, a semiconductor layer formed on one surface of the substrate, a first electrode (n-type electrode) formed on an opposite surface of the substrate, a second electrode (p-type electrode) formed on the semiconductor layer, and a current constriction part formed in the semiconductor layer. The semiconductor layer has a multi-layer structure including at least an active layer. The current constriction part causes a current to concentrate and flow to a particular area of the active layer. The first electrode or the second electrode is joined to a sub-mount. In one embodiment, the location of the current constriction part in a chip width direction is between the center of one of the first and second electrodes, which is joined to the sub-mount, and the center of the other electrode, which is not joined to the sub-mount, when viewed in the chip width direction.

ELECTRICAL ELEMENT MOUNTING PACKAGE, ARRAY PACKAGE, AND ELECTRICAL DEVICE

A light emitting element mounting package includes a plate-like substrate and a base that protrudes from a front surface of the substrate and has a mounting surface on which a light emitting element is mounted. A power supply terminal is provided on the front surface of the substrate, and the power supply terminal is arranged in a direction that is opposite to a direction where an emitting surface of the light emitting element is oriented. The light emitting element mounting package further includes a wiring conductor inside the substrate, wherein the wiring conductor extends to a side of the power supply terminal where one end thereof is positioned at a side of the power supply terminal with respect to the emitting surface of the light emitting element and the other end thereof is electrically connected to the power supply terminal. 1. A light emitting element mounting package comprising:a substrate that is plate-like; anda base that protrudes from a front surface of the substrate and that has a mounting surface on which a light emitting element is mounted, whereina power supply terminal is provided on the front surface of the substrate, andthe power supply terminal is arranged in a direction that is opposite to a direction where an emitting surface of the light emitting element is oriented.2. The light emitting element mounting package according to claim 1 , whereina first element terminal is provided at a position that is adjacent to the base on the front surface of the substrate.3. The light emitting element mounting package according to claim 2 , whereinthe first element terminal is positioned in a transverse direction with respect to a direction where the emitting surface of the light emitting element and the power supply terminal are aligned.4. The light emitting element mounting package according to claim 1 , further comprisinga wiring conductor inside the substrate, whereinthe wiring conductor extends to a side of the power supply terminal where one end ...

SEMICONDUCTOR LASER DEVICE MANUFACTURING METHOD

A manufacturing method comprises: a material preparation step of forming a metal layer on a front side surface of a submount bar body which is to face a laser bar on which a front side electrode and a back side electrode are formed, to prepare a submount bar on which the laser bar is to be mounted; a jig installation step of installing the submount bar and the laser bar that are provided in plural number alternately stacked each other on an installation jig; a bonding step of bonding the metal layer and the back side electrode by increasing the temperature of the installation jig; and a protective film forming step of forming a protective film on cleaved end faces of the laser bar in a protective film forming apparatus using the installation jig in which the submount bars and the laser bars are installed, after the bonding step. 1. A semiconductor laser device manufacturing method of manufacturing a semiconductor laser device in which a protective film is formed on cleaved end faces of a semiconductor laser bar which is a bar-shaped semiconductor laser , the method comprising:a material preparation step of forming a metal layer on a front side surface of a bar-shaped submount bar body which is to face the semiconductor laser bar, to prepare a bar-shaped submount bar on which the semiconductor laser bar is to be mounted, wherein the semiconductor laser bar has a front side electrode formed on one surface different from the cleaved end faces and has a back side electrode formed on a surface opposite to the one surface;a jig installation step of installing the submount bar and the semiconductor laser bar that are provided in plural number alternately stacked on an installation jig such that the metal layer of the submount bar and the back side electrode of the semiconductor laser bar face each other;a bonding step of bonding the metal layer and the back side electrode by increasing a temperature of the installation jig in which the submount bar and the semiconductor ...

Dual-Rate DML Device And Module Having Built-In Signal Calibration Circuit, And Signal Calibration Method

The present invention relates to a technical field of optical communications. It relates to a dual-rate DML device and module, and a calibration method, and in particular, to a dual-rate DML device and module having a built-in signal calibration circuit, and a calibration method. According to the present invention, the signal calibration circuit is added into the device; a PD is prepositioned by means of a novel light splitting structure; a control structure for a sequence-divided multi-channel serial signal is utilized to feed back a monitoring signal to an electric driver to adjust drive current; crosstalk between backlight monitoring is reduced; and high-quality signal output under dual modulation frequencies of 25 Gbps and 28 Gbps is realized.

Independent control of emission wavelength and output power of a semiconductor laser

Methods for driving a tunable laser with integrated tuning elements are disclosed. The methods can include modulating the tuning current and laser injection current such that the laser emission wavelength and output power are independently controllable. In some examples, the tuning current and laser injection current are modulated simultaneously and a wider tuning range can result. In some examples, one or both of these currents is sinusoidally modulated. In some examples, a constant output power can be achieved while tuning the emission wavelength. In some examples, the output power and tuning can follow a linear relationship. In some examples, injection current and tuning element drive waveforms necessary to achieve targeted output power and tuning waveforms can be achieved through optimization based on goodness of fit values between the targeted and actual output power and tuning waveforms.

Light-emitting device

A light-emitting device includes first and second light-emitting elements, first and second support members bonded to the first and second light-emitting elements, respectively, first and second protective elements, and a plurality of wirings including: a first wiring with one end being bonded to the first light-emitting element or the first support member; a second wiring with one end being bonded to the first light-emitting element or the first support member and the other end being bonded to the second light-emitting element or the second support member; a third wiring with one end being bonded to the first protective element or a support member equipped with the first protective element; and a fourth wiring with one end being bonded to the second protective element or a support member equipped with the second protective element.

Semiconductor device

Improve semiconductor device performance. The wiring WL1A on which the semiconductor chip CHP1 in which the semiconductor lasers LD is formed is mounted has a stub STB2 in the vicinity of the mounting area of the semiconductor chip CHP1.

Optical Subassembly Having Side-Emitting Optical Fiber Coupled to High-Energy UV-C Laser Diode

An optical subassembly includes a housing, a laser package, and first and second end sections of side-emitting optical fiber. The housing defines first, second, and third channels which extend from a central space. The laser package is affixed to the third channel and comprises an edge-emitting UV-C laser diode disposed in the central space and having first and second edges. The first end section of side-emitting optical fiber is retained in the first channel and has a first end face which confronts the first edge. The second end section of side-emitting optical fiber is retained in the second channel and has a second end face which confronts the second edge. The housing further defines a fourth channel which extends from the central space. The optical subassembly further includes a transparent window seated in an opening of the fourth channel. 1. An optical subassembly comprising:a housing that defines first, second, and third channels which extend from a central space;a laser package affixed to the third channel and comprising a UV-C laser diode chip disposed in the central space and having first and second edges;a first end section of side-emitting optical fiber retained in the first channel and having a first end face which confronts the first edge; anda second end section of side-emitting optical fiber retained in the second channel and having a second end face which confronts the second edge.2. The optical subassembly as recited in claim 1 , wherein the housing further defines a fourth channel which extends from the central space and has an offset claim 1 , further comprising a transparent window seated on the offset.3. The optical subassembly as recited in claim 1 , wherein the laser package further comprises:a header base having first and second throughholes;a ground pin having one end connected to the header base;a heat sink having a top, a base, and first and second throughholes that pass through the base and not the top, the base of the heat sink being ...

Optical interconnect on bumpless build-up layer package

This disclosure relates generally to an electronic package that can include a die and a dielectric layer at least partially enveloping the die. Electrical interconnects can be electrically coupled to the die and passing, at least in part, through the dielectric layer. An optical emitter can be electrically coupled to the die with a first one of the electrical interconnects and configured to emit light from a first major surface of the electronic package. A solder bump can be electrically coupled to the die with a second one of the electrical interconnects and positioned on a second major surface of the electronic package different from the first major surface.

Optoelectronic packages having magnetic field cancelation

A stacked optoelectronic packaged device includes a bottom die having a top surface including bottom electrical traces and a light source die coupled to ≧1 bottom electrical traces. A first cavity die is on the bottom die. An optics die is on the first cavity die and a second cavity die on the optics die. A mounting substrate is on the second cavity die including top electrical traces. A photodetector die is optically coupled to receive light from the light source. The bottom and top electrical traces are both positioned substantially symmetrically on sides of a mirror plane so that when conducting equal and opposite currents a first magnetic field emanating from the first side and a second magnetic field emanating from the second side cancel one another to provide a reduction in magnetic flux density by more than 50% at one or more die locations on the optics die.

SEMICONDUCTOR LASER DIODE

A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, the semiconductor body includes a connection region that directly adjoins the first connection element at the contact area, and the connection region is a highly p-doped layer.

SEMICONDUCTOR LASER DEVICE

A semiconductor laser device includes a semiconductor layer that includes a light emitting region having a first width and a pad region formed in a region outside the light emitting region and having a second width exceeding the first width, an insulating layer that covers the light emitting region and the pad region, and a wiring electrode that has an internal connection region penetrating through the insulating layer and electrically connected to the light emitting region and an external connection region that covers the pad region across the insulating layer and is to be externally connected to a lead wire.

OPTICAL SEMICONDUCTOR MODULE

An optical semiconductor module according to an embodiment includes a housing; a temperature control element having a temperature control plane; a first board mounted on the temperature control plane; a semiconductor laser device mounted on the second side of the first board; a second board mounted on the second side of the first board, the second board having a third side and a fourth side, the fourth side including a wiring pattern, the wiring pattern being electrically connected with the housing via a first bonding wire and electrically connected to the semiconductor laser device via a second bonding wire, the second board having a second thermal conductivity smaller than the first thermal conductivity. The housing is configured to accommodate the temperature control element, the first board, the second board, and the semiconductor laser device. 1. An optical semiconductor module comprising:a housing;a temperature control element having a temperature control plane, the temperature control element being configured to cool or heat the temperature control plane;a first board mounted on the temperature control plane, the first board having a first side and a second side reverse to the first side, the first side having a surface contact with the temperature control plane, the first board having a first thermal conductivity;a semiconductor laser device mounted on the second side of the first board;a second board mounted on the second side of the first board, the second board having a third side and a fourth side reverse to the third side, the third side being fixed to the second side of the first board, the fourth side including a wiring pattern, the wiring pattern being electrically connected with the housing via a first bonding wire and electrically connected to the semiconductor laser device via a second bonding wire, the second board having a second thermal conductivity smaller than the first thermal conductivity;wherein the housing is configured to accommodate the ...

Optical module

There are provided an optical module including a semiconductor laser including a P-side electrode and an N-side electrode, and a semiconductor laser driver circuit that drives the semiconductor laser so as to output an optical signal from the semiconductor laser according to a pattern of a differentially transmitted digital electric signal, and the semiconductor laser driver circuit includes a positive-side terminal and a negative-side terminal for differentially transmitted non-inverted data, and a positive-side terminal and a negative-side terminal for differentially transmitted inverted data, and one terminal for the non-inverted data is electrically connected to one electrode of the semiconductor laser, and the other terminal for the non-inverted data, one terminal for the inverted data and the other terminal for the inverted data each are connected to the other electrode of the semiconductor laser.

VCSEL DEVICE FOR AN SMI SENSOR FOR RECORDING THREE-DIMENSIONAL PICTURES

A Vertical Cavity Surface Emitting Laser (VCSEL) includes a VCSEL array, a multitude of detectors, a first electrical laser contact, and at least one second electrical laser contact. The VCSEL array comprises a multitude of laser diodes, each laser diode including an optical resonator having a first distributed Bragg reflector, a second distributed Bragg reflector and an active layer for light emission, the active layer being arranged between the first distributed Bragg reflector and the second distributed Bragg reflector. The first electrical laser contact and the at least one second electrical laser contact are arranged to provide an electrical drive current to electrically pump the optical resonators of the laser diodes. Each detector is arranged to generate an electrical self-mixing interference measurement signal associated to at least one laser diode upon reception of the laser light. 1. A Vertical Cavity Surface Emitting Laser device for a self-mixing interference sensor for recording three-dimensional pictures , the VCSEL device comprising:a VCSEL array;a multitude of detectors;a first electrical laser contact; andat least one second electrical laser contact,wherein the VCSEL array comprises a multitude of laser diodes, each laser diode including an optical resonator having a first distributed Bragg reflector, a second distributed Bragg reflector and an active layer for light emission, the active layer being arranged between the first distributed Bragg reflector and the second distributed Bragg reflector,wherein the first electrical laser contact and the at least one second electrical laser contact are arranged to provide an electrical drive current to electrically pump the optical resonators of the laser diodes,wherein the first electrical laser contact is a common contact for all laser diodes of the VCSEL array,wherein the at least one second electrical laser contact is arranged to electrically contact at least a subgroup of the multitude of laser diodes ...

Manufacturable laser diode formed on c-plane gallium and nitrogen material

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Solderless Mounting for Semiconductor Lasers

A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

STRUCTURE OF IMPEDANCE SIGNAL LINES FOR TO-CAN TYPE SEMICONDUCTOR PACKAGE

A structure for impedance signal lines of a transistor outline (TO)-can type semiconductor package is disclosed. The TO-can type semiconductor package may include a header including a semiconductor laser diode disposed on one side thereof; a signal line penetrating the header and including a one end protruding from the one side of the header; and an edge-coupled microstrip (ECM) portion connected to the signal line. The ECM portion is configured to include a dielectric and ECM lines are formed as conductive patterns having predetermined widths and leaving a predetermined space therebetween on a first side of the dielectric, and respectively connected to the signal lines. 1. A transistor outline (TO)-can type semiconductor package comprising:a header comprising a semiconductor laser diode disposed on one side thereof;a signal line passing through the header and comprising one end protruding from the one side of the header; andan edge-coupled microstrip (ECM) portion connected to the signal line,the ECM portion comprising:a dielectric; andECM lines formed as conductive patterns having predetermined widths and having a predetermined space therebetween on a first side of the dielectric, and respectively connected to the signal lines.2. The TO-can type semiconductor package according to claim 1 , wherein:the ECM lines comprise two ECM lines formed to be spaced apart from each other at a predetermined distance, andthe dielectric has a predetermined thickness.3. The TO-can type semiconductor package according to claim 1 , wherein the ECM portion further comprises a ground plane at least partially formed on a second side of the dielectric.4. The TO-can type semiconductor package according to claim 2 , wherein the signal line comprises a differential signal line claim 2 , of which characteristic impedance is varied depending on at least one of: the widths of the ECM lines claim 2 , the space between the ECM lines claim 2 , the thickness of the dielectric claim 2 , the kind ...

OPTICAL MODULE

The metallization pattern includes a pair of first metal films on the respective pair of first surfaces, and a second metal film on the pair of second surfaces to connect the pair of first metal films. The support block includes a connection conductor connecting the pair of first metal films, the connection conductor being a castellation conductor and/or a via conductor, the castellation conductor being on the pair of third surfaces of the ceramic body, the via conductor being through the ceramic body between the pair of first surfaces. The mounting substrate is mounted on one of the pair of first surfaces. One end of the first wire is bonded to a corresponding one of the pair of first metal films or the connection conductor, at a position adjacent to or overlapping with the connection conductor, on another of the pair of first surfaces. 1. An optical module comprising:a stem from which a pedestal portion integrally protrudes;a photoelectric device configured to convert an optical signal and an electrical signal from at least one to another;a mounting substrate on which the photoelectric device is mounted;a support block with a ceramic body, the support block having a metallization pattern on a surface of the ceramic body, the mounting substrate overlapping with the metallization pattern and being mounted on the support block; anda first wire electrically connecting the pedestal portion and the metallization pattern,the surface of the ceramic body including a pair of first surfaces facing in opposite directions along a first direction, the surface of the ceramic body including a pair of second surfaces facing in opposite directions along a second direction intersecting with the first direction, the surface of the ceramic body including a pair of third surfaces facing in opposite directions along a third direction intersecting with both the first direction and the second direction,the metallization pattern including a pair of first metal films on the respective pair ...

Integrated circuit package and system using same

Various embodiments of an integrated circuit package and a method of forming such package are disclosed. The integrated circuit package includes first and second active dies. Each of the first and second active dies includes a top contact disposed on the top surface of the die and a bottom contact disposed on a bottom surface of the die. The package further includes a via die having first and second vias that each extends between a top contact disposed on a top surface of the via die and a bottom contact disposed on a bottom surface of the via die, where the bottom contact of the first active die is electrically connected to the bottom contact of the first via of the via die and the bottom contact of the second active die is electrically connected to the bottom contact of the second via of the via die.

Laser module and method of manufacturing the same

A laser module includes an optical fiber, a laser device, an optical system, a housing, a lead terminal, a conductive wire, and an insulation member. The laser device emits a laser beam. The optical system couples the laser beam, emitted from the laser device, to the optical fiber. The housing includes a base plate on which the laser device is fixed and a side wall that includes an opening. The lead terminal extends from an outside of the housing through the opening of the side wall into the housing. The conductive wire electrically connects a connecting portion of the lead terminal, located within the housing, to the laser device. The insulation member includes a seal portion and an extension portion.

Eye-safe light source and method for manufacturing same

An eye-safe light source that has a long lifetime and includes a lid which is not easily separated from a container is implemented. A transparent resin layer that seals a semiconductor laser fixes a cover to a package. A recess part that includes a bottom surface on which the semiconductor laser is mounted, a reflective surface on which laser light is reflected, and an opening through which the reflected laser light is radiated is disposed in the package. The cover covers the opening, and the transparent resin layer is disposed in the recess part.

Laser Package with High Precision Lens

The present disclosure relates to optical systems and methods for their manufacture. An example method includes coupling a first surface of a light-emitter substrate to a reference surface of a carrier substrate. The method also includes registering a mold structure with respect to the reference surface of the carrier substrate. Furthermore, the method includes using the mold structure to form an optical material over at least a portion of the light-emitter substrate. The optical material is shaped according to a shape of the mold structure and includes at least one registration feature. The method also includes coupling an optical lens element to the optical material such that the optical lens element is registered to the at least one registration feature.

Semiconductor laser device, photoelectric converter, and optical information processing unit

A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.

Light emitting device

A light emitting device includes a base defining a recess opening upward, a semiconductor laser element, a light reflecting member to reflect light from the semiconductor laser element, a wavelength converting member to convert wavelength of light from the light reflecting member, and a cover including a light-transmissive member and covering the opening of the recess. The recess is defined in the base by first inner lateral surfaces extending downward from a periphery of the opening of the recess defined in the upper surface of the base, a bottom surface connected to the first inner lateral surfaces, a mounting surface connected to the first inner lateral surfaces and located higher than the bottom surface in a region different from the bottom surface when viewed from above, and second inner lateral surfaces connecting the bottom surface and the mounting surface. The wavelength converting member is fixed on the mounting surface.

Free space multiple laser diode module with fast axis collimator

Systems, devices, and methods for optical engines and laser projectors that are well-suited for use in wearable heads-up displays (WHUDs) are described. Generally, the optical engines of the present disclosure integrate a plurality of laser diodes (e.g., 3 laser diodes, 4 laser diodes) within a single, hermetically or partially hermetically sealed, encapsulated package. The optical engines include an optical director element that includes a curved reflective surface (e.g., parabolic cylinder) that redirects laser light beams and collimates the same along the fast axes thereof. Such optical engines may have various advantages over existing designs including, for example, smaller volumes, better manufacturability, faster modulation speed, etc. WHUDs that employ such optical engines and laser projectors are also described.

Optical element mounting package, electronic device, and electronic module

An optical element mounting package includes a recess, a mounting portion for an optical element, and a reflector. The mounting portion is at a bottom surface of the recess. The reflector is, in the recess, positioned forward in an emission direction of light of the optical element. A first portion is a portion of an inner side surface of the recess, and is positioned in an opposite direction to the emission direction. The first portion has an inclined surface toward the bottom surface of the recess.

External resonant laser module

The laser module includes a QCL element, a MEMS diffraction grating, a lens holder for holding a lens disposed between the QCL element and the MEMS diffraction grating, and a package. The package includes a bottom wall, a side wall erected on the bottom wall and formed in an annular shape so as to surround a region in which the QCL element is accommodated, and a top wall closing an opening of the side wall on a side opposite to a side where the bottom wall is disposed. The top wall faces the bottom wall in a direction orthogonal to the optical axis direction of the lens, and the distance between the top wall and a surface of the lens holder on a side where the top wall is disposed is smaller than a thickness of the lens holder along the optical axis direction of the lens.

External resonant laser module

The laser module includes a QCL element, a MEMS diffraction grating, a lens holder holding a lens disposed between the QCL element and the MEMS diffraction grating, a package, an electrode terminal disposed along an inner wall surface of the package, and a wire for electrically connecting the electrode terminal and a coil. The top wall of the package faces the bottom wall of the package in a direction orthogonal to the optical axis direction of the lens. The MEMS diffraction grating includes an electrode pad electrically connected to the coil. The electrode pad is connected to the electrode terminal via the wire. A height position of the electrode pad with respect to the bottom wall is equal to or higher than a height position of the electrode terminal with respect to the bottom wall.

Devices with ultra-small vertical cavity surface emitting laser emitters incorporating beam steering

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

LIGHT EMITTING DEVICE

A light emitting device includes: a base including: a main body, and a frame disposed on an upper surface of the main body; one or more laser elements disposed on the upper surface of the main body and positioned inward of the frame; and a cover including: a support member that is fixed to an upper surface of the frame and that has an opening inside the frame, and a light transmissive portion that is fixed to the support member and that is disposed so as to close the opening. A first interface, between the light transmissive portion and the support member, is located inward of and lower than a second interface, between the support member and the frame. A portion of the support member that extends at least from an outermost end of the first interface to an innermost end of the second interface has a constant thickness. 1. A light emitting device comprising: a main body, and', 'a frame disposed on an upper surface of the main body;, 'a base comprisingone or more laser elements disposed on the upper surface of the main body and positioned inward of the frame; and a support member that is fixed to an upper surface of the frame and that has an opening inside the frame, and', 'a light transmissive portion that is fixed to the support member and that is disposed so as to close the opening;, 'a cover comprisingwherein a first interface, between the light transmissive portion and the support member, is located inward of and lower than a second interface, between the support member and the frame, andwherein a portion of the support member that extends at least from an outermost end of the first interface to an innermost end of the second interface has a constant thickness.2. The light emitting device according to claim 1 , further comprising:a lens body that is disposed on the support member such that the lens body is above the light transmissive portion.3. The light emitting device according to claim 2 , wherein:a difference between a thermal expansion coefficient of the ...

Optical element package and optical element device

An optical element package includes: an eyelet including an upper surface and a lower surface opposite to the upper surface; a heat releasing part disposed on the upper surface of the eyelet; a through hole formed through the eyelet to extend from the upper surface of the eyelet to the lower surface of the eyelet; a lead sealed by a certain member provided in the through hole and including a lead portion extending from the lower surface of the eyelet and a lead wiring portion extending from the upper surface of the eyelet; and an insulating substrate disposed between the lead wiring portion and the heat releasing part and comprising a front surface and a back surface opposite to the front surface.

Semiconductor laser driving apparatus, electronic equipment, and manufacturing method of semiconductor laser driving apparatus

An object of the present technique is to reduce a wiring inductance between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser driving apparatus. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A sealing portion seals a connection terminal portion of the semiconductor laser for the substrate.

OPTICAL MODULE

An optical module includes: amounting substrate; a support block on which the mounting substrate is mounted; and a stem having a support surface to support the support block, the stem having a pedestal portion with a tip face in a protruding direction and with an upper surface spreading along the protruding direction; a relay board on the upper surface; a connection block fixed to the tip face; and wires connecting the support block and the mounting substrate to the connection block. The connection block has a surface made of a conductor. The connection block has a first bonding surface facing the same direction as the tip face of the pedestal portion and a second bonding surface facing the same direction as the upper surface. The wires include first and second wires having their ends bonded to the first and second bonding surface, respectively. 1. An optical module comprising:a photoelectric device configured to convert an optical signal and an electrical signal at least from one to another;a mounting substrate on which the photoelectric device is mounted;a support block on which the mounting substrate is mounted and at least a surface of which is made of a conductor; anda stem having a support surface to support the support block, the stem having a pedestal portion projecting integrally from the support surface, the pedestal portion having a tip face in a protruding direction and an upper surface spreading along the protruding direction;a relay board mounted on the upper surface of the pedestal portion;a connection block fixed to the tip face of the pedestal portion; andsome wires, each of the wires connecting a corresponding one of the support block and the mounting substrate to the connection block,the connection block having a surface at least part of which is made of a conductor, the connection block having a first bonding surface facing the same direction as the tip face of the pedestal portion and a second bonding surface facing the same direction as the ...

OPTOELECTRONIC COMPONENT

The invention relates to an optoelectronic component comprising a housing, an optoelectronic semiconductor chip and an optical element. The housing comprises a lead frame which has two external electrical contact points and two contact portions. The housing also comprises a housing body in which the lead frame is embedded, wherein each contact portion extends laterally out of one of the external electrical contact points in each case to a mounting surface of the housing, and therefore contact surfaces of the contact portions are exposed on the mounting surface. An electrical contact structure of the optical element is electrically conductively connected to the contact surfaces of the contact portions. 1. An optoelectronic component comprising: a leadframe having two external electrical contact locations and two contact webs,', 'a housing body, into which the leadframe is embedded, wherein', 'each contact web extends laterally from a respective one of the external electrical contact locations to a mounting surface of the housing, such that contact surfaces of the contact webs are exposed at the mounting surface,, 'a housing comprisingan optoelectronic semiconductor chip,an optical element arranged on the mounting surface of the housing, whereinelectrical contact structures of the optical element are electrically conductively connected to the contact surfaces of the contact webs.2. The optoelectronic component as claimed in comprising a housing wall extending around the mounting surface.3. The optoelectronic component as claimed in claim 1 ,wherein the contact webs have a smaller thickness than the external electrical contact locations.4. The optoelectronic component as claimed in claim 1 ,wherein the housing body is embodied in black fashion.5. The optoelectronic component as claimed in claim 1 ,wherein each contact surface is arranged at a bottom surface of a recess.6. The optoelectronic component as claimed in claim 1 ,wherein the leadframe has a supporting frame ...

Condensation prevention for high-power laser systems

In various embodiments, laser systems or resonators incorporate two separate cooling loops that may be operated at different cooling temperatures. One cooling loop, which may be operated at a lower temperature, cools beam emitters. The other cooling loop, which may be operated at a higher temperature, cools other mechanical and/or optical components, for example optical elements such as lenses and/or reflectors.

Assembly techniques and cooling manifold configuration for high-power laser systems

In various embodiments, laser resonators include enclosed cooling manifolds defining protrusions each configured to conduct heat-exchange fluid to a beam emitter in the resonator. Installation of such cooling manifolds may be facilitated via use of a rigid installation tool functioning as a mechanical reference, prior to installation of the beam emitters and sealing of the beam emitters to the cooling manifold.

SEMICONDUCTOR LASER DRIVING APPARATUS, ELECTRONIC EQUIPMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR LASER DRIVING APPARATUS

To reduce the wiring inductance between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A substrate incorporates a laser driver. A semiconductor laser is mounted on one surface of the substrate of a semiconductor laser driving apparatus to emit irradiation light from an irradiation surface. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A temperature sensor measures a temperature relating to the semiconductor laser. A memory stores control data from the laser driver to the semiconductor laser in a manner corresponding to the temperature. 1. A semiconductor laser driving apparatus , comprising:a substrate incorporating a laser driver;a semiconductor laser mounted on one surface of the substrate to emit irradiation light from an irradiation surface;connection wiring that electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less;a temperature sensor for measuring a temperature relating to the semiconductor laser; anda memory for storing control data from the laser driver to the semiconductor laser in a manner corresponding to the temperature.2. The semiconductor laser driving apparatus according to claim 1 ,wherein the memory stores, as the control data, a drive current for the semiconductor laser to output predetermined laser power, andthe laser driver reads the corresponding drive current from the memory on a basis of the temperature measured by the temperature sensor and outputs the read drive current to the semiconductor laser.3. The semiconductor laser driving apparatus according to claim 1 , further comprising:an outer wall surrounding a region including the semiconductor laser on the one surface of the substrate;a diffusion plate covering an upper part of the region surrounded by the outer wall; anda photodiode that is mounted on the one surface of ...

Semiconductor laser device

This semiconductor laser device comprises: a semiconductor laser element; a switching element connected in series to the semiconductor laser element, the switching element having a gate electrode, a drain electrode, and a source electrode; capacitors connected in parallel to the semiconductor laser element and the switching element; first drive electroconductive parts to which first terminals of the capacitors are connected; a second drive electroconductive part positioned apart from the first drive electroconductive parts; first drive connection members that connect the first drive electroconductive parts and the source electrode; and a second drive connection member that connects the second drive electroconductive part and the source electrode.

SMALL FORM FACTOR TRANSMITTING DEVICE

A packaged transmitter device includes a base member comprising a planar part mounted with a thermoelectric cooler, a transmitter, and a coupling lens assembly, and an assembling part connected to one side of the planar part. The device further includes a circuit board bended to have a first end region and a second end region being raised to a higher level. The first end region disposed on a top surface of the planar part includes multiple electrical connection patches respectively connected to the thermoelectric and the transmitter. The second end region includes an electrical port for external connection. Additionally, the device includes a cover member disposed over the planar part. Furthermore, the device includes a cylindrical member installed to the assembling part for enclosing an isolator aligned to the coupling lens assembly along its axis and connected to a fiber to couple optical signal from the transmitter to the fiber. 1. A pluggable optical communication device comprising:a circuit substrate having a connector pluggable into a network system; and receive optical signals from an optical port coupled to the silicon photonics chip;', 'convert the optical signals into electrical signals; and', 'extract from the electrical signals communications data and output the communications data to the network system via the connector., 'a silicon photonics chip coupled to the circuit substrate, the silicon photonics chip configured to2. The pluggable optical communication device of wherein the circuit substrate is a printed circuit board.3. The pluggable optical communication device of wherein the pluggable connector is integrally formed in the circuit substrate.4. The pluggable optical communication device of wherein the silicon photonics chip is mounted on the circuit substrate.5. The pluggable optical communication device of wherein the silicon photonics chip comprises a fiber-to-silicon attachment claim 1 , wherein the optical port is coupled to the silicon ...

Semiconductor Device and Method

A method includes depositing a photonic structure over a substrate, the photonic structure including photonic semiconductor layer, forming conductive pads over the photonic structure, forming a hard mask over the conductive pads, wherein the hard mask is patterned to cover each conductive pad with a hard mask region, etching the photonic structure using the hard mask as an etching mask to form multiple mesa structures protruding from the substrate, each mesa structure including a portion of the photonic structure, a contact pad, and a hard mask region, depositing a first photoresist over the multiple mesa structures, depositing a second photoresist over the first photoresist, patterning the second photoresist to expose the hard mask regions of the multiple mesa structures, and etching the hard mask regions to expose portions of the contact pads of the multiple mesa structures.

Semiconductor laser

A semiconductor laser includes a contact carrier having electrical contact surfaces to electrically contact a semiconductor layer sequence, an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier and a plurality of capacitors, wherein the connecting line is located on or in the semiconductor layer sequence, at least two of the capacitors are present, the capacitances of which differ by at least a factor of 50, the capacitor having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply, the capacitor having the smaller capacitance directly electrically connects to the active zone, and a resistor is arranged between the capacitor having the larger capacitance and the active zone, the resistor having a resistance of at least 100 Ω.

INTEGRATED COMPACT IN-PACKAGE LIGHT ENGINE

An integrated compact light engine configured in a on-board in-package optics assembly. The compact light engine includes a single substrate to integrate multiple optical-electrical modules. Each optical-electrical module includes an integrated optical transceiver based on silicon-photonics platform, in which a transmit path configured to output four light signals centered at four CWDM wavelengths and from four laser devices and to modulate the four light signals respectively by four modulators driven by a driver chip and to deliver a multiplexed transmission light. A receive path includes a photodetector to detect four input signals demultiplexed from an incoming light and a trans-impedance amplifier chip to process electrical signals converted from the four input signals detected. A multi-channel light engine is formed by co-integrating or co-mounting a switch device with multiple compact light engines on a common substrate member to provide up to 51.2 Tbit/s total capacity of data communication with median-or-short-reach electrical interconnect. 1. An integrated optical transceiver comprising:a substrate member having a surface region; a set of four laser devices configured to output four laser lights;', a set of four modulator devices formed in the surface region and respectively receiving corresponding one of the two portions of the four laser lights;', 'a driver device coupled to the set of four modulator devices and configured to drive each modulator device to modulate a respective one of the four laser lights;, 'a set of four power splitter devices coupled to the four laser lights to split each of the four laser lights to two portions leading to two replicated transmit paths, each transmit path including,'}], 'a transmitter unit provided on the surface region and comprising a photodetector device configured to receive four input optical signals and convert the four input optical signals to respective electrical signals; and', 'a transimpedance amplifier ...

Semiconductor laser and optical amplifier photonic package

A light detection and ranging (LIDAR) device includes a first wafer layer, a laser assembly disposed on the first wafer layer, a capping layer, a second wafer layer, and a photonic integrated circuit (PIC). The capping layer is coupled to the first wafer layer and configured to seal the laser assembly. The second wafer layer is at least partially coupled to the first wafer layer. The PIC is formed on the second wafer layer. The second wafer includes an exit feature configured to outcouple laser light from the laser assembly.

LIGHT-EMITTING DEVICE

A light-emitting device includes: a substrate including a base and a side wall; a plurality of semiconductor laser elements disposed in a row direction and in a column direction on an upper surface of the base; a plurality of pairs of wires that penetrate the side wall in the row direction; and a lens array fixed to the substrate, the lens array comprising a plurality of lens sections disposed in the row direction and in the column direction above the plurality of semiconductor laser elements. Each laser beam that is emitted from the semiconductor laser elements and is incident on a light incident surface of the lens array has a beam shape with a greater width in the column direction than in the row direction. 1. A light-emitting device comprising:a substrate comprising a base and a side wall;a plurality of semiconductor laser elements disposed in a row direction and in a column direction on an upper surface of the base, each semiconductor laser elements being configured to emit a laser beam;a plurality of pairs of wires that penetrate the side wall in the row direction; anda lens array fixed to the substrate, the lens array comprising a plurality of lens sections disposed in the row direction and in the column direction above the plurality of semiconductor laser elements,wherein the plurality of lens sections are disposed in correspondence with the plurality of semiconductor laser elements in which the laser beam emitted from each semiconductor laser element is emitted so as to pass through a corresponding lens section,wherein each laser beam that is emitted from the semiconductor laser elements and is incident on a light incident surface of the lens array has a beam shape with a greater width in the column direction than in the row direction,wherein, in the lens array, an inter-vertex distance between lens sections that are adjacent to each other in the row direction is smaller than an inter-vertex distance between lens sections that are adjacent to each other in ...

LIGHT EMITTING DEVICE, AND ELECTRONIC APPARATUS

A light emitting device includes a first substrate, a light source on a first surface of the first substrate and that emits light toward an object, and a driver disposed in the first substrate and that drives the light source. The driver overlaps the light source in a plan view. The light emitting device includes at least one first via disposed in the first substrate and overlapping the driver in the plan view, and a first conductor on a second surface of the first substrate opposite the first surface and overlapping the light source, the driver, and the at least one first via in the plan view. The first conductor is connected to the at least one first via. 1. A light emitting device , comprising:a first substrate;a light source on a first surface of the first substrate and that emits light toward an object;a driver disposed in the first substrate and that drives the light source, wherein the driver overlaps the light source in a plan view;at least one first via disposed in the first substrate and overlapping the driver in the plan view; anda first conductor on a second surface of the first substrate opposite the first surface and overlapping the light source, the driver, and the at least one first via in the plan view, wherein the first conductor is connected to the at least one first via.2. The light emitting device of claim 1 , further comprising:a second conductor disposed in the substrate and overlapping the driver and the at least first one via in the plan view.3. The light emitting device of claim 2 , wherein the second conductor is connected to the at least one first via.4. The light emitting device of claim 3 , wherein the second conductor is between the at least one first via and the driver.5. The light emitting device of claim 3 , wherein the second conductor is spaced apart from the driver by a portion of the first substrate.6. The light emitting device of claim 3 , wherein the second conductor contacts the driver.7. The light emitting device of claim 3 ...

Semiconductor laser driving apparatus, electronic equipment, and manufacturing method of semiconductor laser driving apparatus

An object of the present technique is to obtain excellent heat radiation characteristics with a simple structure in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. Side walls surround a region including the semiconductor laser on the surface of the substrate where the semiconductor laser is mounted. The side walls have a heat storage material therein.

Semiconductor Laser Diode and Method for Producing a Semiconductor Laser Diode

A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment, the semiconductor laser diode includes a semiconductor layer sequence having an active zone, wherein the semiconductor layer sequence has a cylindrical shape, wherein a cylinder axis of the semiconductor layer sequence is perpendicular to a layer plane of the semiconductor layer sequence, and wherein the semiconductor laser diode is configured to emit radiation perpendicularly to the cylinder axis of the semiconductor layer sequence.

Semiconductor light-emitting device

A semiconductor light-emitting device, includes: a semiconductor light-emitting element; a support including a base and a conductive part and configured to support the semiconductor light-emitting element; and a cover configured to overlap the semiconductor light-emitting element as viewed in a first direction, and to transmit light from the semiconductor light-emitting element, wherein the cover includes a base layer having a front surface and a rear surface which transmit the light from the semiconductor light-emitting element and face opposite sides to each other in the first direction, wherein the rear surface faces the semiconductor light-emitting element, wherein the base layer includes a plurality of undulation parts bonded to the support by a bonding material, and wherein the undulation parts are more uneven than the rear surface.

Light-emitting device

A light-emitting device includes: a semiconductor laser element; a package; an optical member fixed to the package; and a first adhesive and a second adhesive fixing the optical member to the package, the second adhesive having a better resistance to light than the first adhesive. The package has an emission surface through which light from the semiconductor laser element exits the package. In the optical member, one or more first bonding regions to which the first adhesive is bonded and one or more second bonding regions to which the second adhesive is bonded are located at positions that are closer to an incidence surface of the optical member than to an emission surface of the optical member. In the optical member, the one or more first bonding regions and the one or more second bonding regions have a light transmittance of 80% or more.

BASE MEMBER OR LIGHT-EMITTING DEVICE

A base member includes a lower portion and a lateral portion. The lateral portion includes a first lateral surface, a second lateral surface not adjacent to the first lateral surface, and a third lateral surface adjacent to the first lateral surface, and first to third step portions. The first step portion is arranged inward of the first lateral surface along a portion or an entirety of the first lateral surface, and has a first upper surface provided with a wiring pattern. The second step portion is arranged inward of the second lateral surface along a portion or an entirety of the second lateral surface, and has a second upper surface provided with a wiring pattern. The third step portion is arranged inward of the third lateral surface along only a portion of the third lateral surface, and has a third upper surface provided with a wiring pattern. 1. A base member comprising:a lower portion having an upper surface; and a plurality of inner lateral surfaces including a first lateral surface, a second lateral surface not adjacent to the first lateral surface, and a third lateral surface adjacent to the first lateral surface,', 'a first step portion arranged inward of the first lateral surface along a portion or an entirety of the first lateral surface in the top view, the first step portion having a first upper surface provided with a wiring pattern,', 'a second step portion arranged inward of the second lateral surface along a portion or an entirety of the second lateral surface in the top view, the second step portion having a second upper surface provided with a wiring pattern, and', 'a third step portion arranged inward of the third lateral surface along only a portion of the third lateral surface in the top view, the third step portion having a third upper surface provided with a wiring pattern., 'a lateral portion surrounding the upper surface of the lower portion in a top view, the lateral portion including'}2. The base member according to claim 1 , whereinthe ...

SEMICONDUCTOR LASER DRIVING APPARATUS, ELECTRONIC EQUIPMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR LASER DRIVING APPARATUS

An object of the present technique is to easily downsize a semiconductor laser driving apparatus incorporating a laser driver. A semiconductor laser driving apparatus includes a substrate, a laser driver, a semiconductor laser, side walls, and a test pad. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser driving apparatus. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. The outer walls surround a predetermined mounting region that is included in the one surface of the substrate and where the semiconductor laser is mounted. The test pad is provided in a region that is included in the one surface of the substrate but does not correspond to the mounting region. 1. A semiconductor laser driving apparatus , comprising:a substrate incorporating a laser driver;a semiconductor laser mounted on one surface of the substrate;connection wiring that electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less;outer walls surrounding a predetermined mounting region that is included in the one surface of the substrate and where the semiconductor laser is mounted; anda test pad provided in a region that is included in the one surface of the substrate but does not correspond to the mounting region.2. The semiconductor laser driving apparatus according to claim 1 ,wherein the test pad is connected to the laser driver.3. The semiconductor laser driving apparatus according to claim 1 ,wherein the connection wiring has a length of 0.5 millimeters or less.4. The semiconductor laser driving apparatus according to claim 1 ,wherein the connection wiring is provided via a connection via provided in the substrate.5. The semiconductor laser driving apparatus according to claim 1 ,wherein the semiconductor laser is arranged in such a ...

Optical module

An optical module includes: a substrate including a through hole, a first chip including a first heating member and disposed in the through hole, a second chip including a second heating member and bonded to a first upper surface of the substrate and a second upper surface of the first chip via bumps, and a first heat sink adhered to a lower surface of the substrate with a first adhesive and adhered to a lower surface of the first chip with a second adhesive, wherein the substrate includes a slit which is provided on a side of a first portion, to which the second chip is bonded, of the substrate with respect to the through hole, and communicates with the through hole.

Laser element

A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer, a back conductive structure opposite to the front conductive structure, which comprises a plurality of detecting electrodes separated from each other, and a via hole extending from the back conductive structure to the conductive layer, wherein the plurality of detecting electrodes electrically connected to the conductive layer through the via hole

Optoelectronic semiconductor device with first and second optoelectronic elements

An optoelectronic semiconductor device may include a first array of first optoelectronic components and a second array of second optoelectronic components arranged in a substrate. The first optoelectronic components may each include a first resonator mirror and a second resonator mirror where the first resonator mirror has a first main surface and an active area suitable for generating radiation. Each resonator mirror is arranged one above the other along a first direction where radiation emitted by the optoelectronic component is emitted via the first main surface. The first optoelectronic components are suitable for emitting electromagnetic radiation. The second optoelectronic components may each include an active area suitable for generating radiation and are suitable for absorbing electromagnetic radiation.